JP2025517471A - ポリシリコンエッチング用に配合されたアルカリ化学物質 - Google Patents

ポリシリコンエッチング用に配合されたアルカリ化学物質 Download PDF

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Publication number
JP2025517471A
JP2025517471A JP2024569229A JP2024569229A JP2025517471A JP 2025517471 A JP2025517471 A JP 2025517471A JP 2024569229 A JP2024569229 A JP 2024569229A JP 2024569229 A JP2024569229 A JP 2024569229A JP 2025517471 A JP2025517471 A JP 2025517471A
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Japan
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weight
neat
composition
etching
silicon
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Pending
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JP2024569229A
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Japanese (ja)
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JP2025517471A5 (https=
Inventor
ゲー ジー－クエイ
リー イー－チア
ウー アイピン
Original Assignee
バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
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Application filed by バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー filed Critical バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
Publication of JP2025517471A publication Critical patent/JP2025517471A/ja
Publication of JP2025517471A5 publication Critical patent/JP2025517471A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Detergent Compositions (AREA)
JP2024569229A 2022-05-23 2023-03-30 ポリシリコンエッチング用に配合されたアルカリ化学物質 Pending JP2025517471A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263365154P 2022-05-23 2022-05-23
US63/365,154 2022-05-23
PCT/US2023/065163 WO2023230394A1 (en) 2022-05-23 2023-03-30 Formulated alkaline chemistry for polysilicon exhume

Publications (2)

Publication Number Publication Date
JP2025517471A true JP2025517471A (ja) 2025-06-05
JP2025517471A5 JP2025517471A5 (https=) 2026-01-23

Family

ID=86007459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024569229A Pending JP2025517471A (ja) 2022-05-23 2023-03-30 ポリシリコンエッチング用に配合されたアルカリ化学物質

Country Status (7)

Country Link
US (1) US20250304856A1 (https=)
EP (1) EP4508676A1 (https=)
JP (1) JP2025517471A (https=)
KR (1) KR20250012632A (https=)
CN (1) CN119452457A (https=)
TW (1) TW202346541A (https=)
WO (1) WO2023230394A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6233779B2 (ja) * 2013-11-18 2017-11-22 富士フイルム株式会社 変性レジストの剥離方法、これに用いる変性レジストの剥離液および半導体基板製品の製造方法
US10400167B2 (en) 2015-11-25 2019-09-03 Versum Materials Us, Llc Etching compositions and methods for using same
US11180697B2 (en) 2018-11-19 2021-11-23 Versum Materials Us, Llc Etching solution having silicon oxide corrosion inhibitor and method of using the same
TWI864116B (zh) * 2019-09-30 2024-12-01 美商慧盛材料美國有限責任公司 用於製造半導體裝置期間之選擇性移除氮化矽之蝕刻組合物及方法
KR102951694B1 (ko) * 2019-10-29 2026-04-13 동우 화인켐 주식회사 식각액 조성물, 이를 이용한 패턴 형성 방법 및 어레이 기판의 제조 방법, 및 이에 따라 제조된 어레이 기판
KR102862934B1 (ko) * 2020-09-09 2025-09-22 동우 화인켐 주식회사 실리콘 식각액 조성물, 이를 이용한 패턴 형성 방법 및 어레이 기판의 제조 방법, 및 이에 따라 제조된 어레이 기판

Also Published As

Publication number Publication date
KR20250012632A (ko) 2025-01-24
CN119452457A (zh) 2025-02-14
WO2023230394A1 (en) 2023-11-30
TW202346541A (zh) 2023-12-01
US20250304856A1 (en) 2025-10-02
EP4508676A1 (en) 2025-02-19

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