TW202346541A - 用於多晶矽挖掘的配製鹼性化學物質 - Google Patents
用於多晶矽挖掘的配製鹼性化學物質 Download PDFInfo
- Publication number
- TW202346541A TW202346541A TW112112561A TW112112561A TW202346541A TW 202346541 A TW202346541 A TW 202346541A TW 112112561 A TW112112561 A TW 112112561A TW 112112561 A TW112112561 A TW 112112561A TW 202346541 A TW202346541 A TW 202346541A
- Authority
- TW
- Taiwan
- Prior art keywords
- weight
- composition
- pure
- etching
- silicon
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/66—Wet etching of conductive or resistive materials
- H10P50/663—Wet etching of conductive or resistive materials by chemical means only
- H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263365154P | 2022-05-23 | 2022-05-23 | |
| US63/365,154 | 2022-05-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202346541A true TW202346541A (zh) | 2023-12-01 |
Family
ID=86007459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112112561A TW202346541A (zh) | 2022-05-23 | 2023-03-31 | 用於多晶矽挖掘的配製鹼性化學物質 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250304856A1 (https=) |
| EP (1) | EP4508676A1 (https=) |
| JP (1) | JP2025517471A (https=) |
| KR (1) | KR20250012632A (https=) |
| CN (1) | CN119452457A (https=) |
| TW (1) | TW202346541A (https=) |
| WO (1) | WO2023230394A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6233779B2 (ja) * | 2013-11-18 | 2017-11-22 | 富士フイルム株式会社 | 変性レジストの剥離方法、これに用いる変性レジストの剥離液および半導体基板製品の製造方法 |
| US10400167B2 (en) | 2015-11-25 | 2019-09-03 | Versum Materials Us, Llc | Etching compositions and methods for using same |
| US11180697B2 (en) | 2018-11-19 | 2021-11-23 | Versum Materials Us, Llc | Etching solution having silicon oxide corrosion inhibitor and method of using the same |
| TWI864116B (zh) * | 2019-09-30 | 2024-12-01 | 美商慧盛材料美國有限責任公司 | 用於製造半導體裝置期間之選擇性移除氮化矽之蝕刻組合物及方法 |
| KR102951694B1 (ko) * | 2019-10-29 | 2026-04-13 | 동우 화인켐 주식회사 | 식각액 조성물, 이를 이용한 패턴 형성 방법 및 어레이 기판의 제조 방법, 및 이에 따라 제조된 어레이 기판 |
| KR102862934B1 (ko) * | 2020-09-09 | 2025-09-22 | 동우 화인켐 주식회사 | 실리콘 식각액 조성물, 이를 이용한 패턴 형성 방법 및 어레이 기판의 제조 방법, 및 이에 따라 제조된 어레이 기판 |
-
2023
- 2023-03-30 WO PCT/US2023/065163 patent/WO2023230394A1/en not_active Ceased
- 2023-03-30 KR KR1020247042441A patent/KR20250012632A/ko active Pending
- 2023-03-30 EP EP23717384.4A patent/EP4508676A1/en active Pending
- 2023-03-30 JP JP2024569229A patent/JP2025517471A/ja active Pending
- 2023-03-30 CN CN202380046390.3A patent/CN119452457A/zh active Pending
- 2023-03-30 US US18/864,038 patent/US20250304856A1/en active Pending
- 2023-03-31 TW TW112112561A patent/TW202346541A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20250012632A (ko) | 2025-01-24 |
| CN119452457A (zh) | 2025-02-14 |
| WO2023230394A1 (en) | 2023-11-30 |
| JP2025517471A (ja) | 2025-06-05 |
| US20250304856A1 (en) | 2025-10-02 |
| EP4508676A1 (en) | 2025-02-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI683037B (zh) | 於製造一半導體裝置時用於選擇性移除矽氮化物的蝕刻溶液 | |
| TWI509690B (zh) | 選擇性移除氮化矽之組合物及方法 | |
| JP6550123B2 (ja) | エッチング組成物 | |
| EP3938465B1 (en) | Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device | |
| KR102874253B1 (ko) | 반도체 소자의 제조 중 질화규소를 선택적으로 제거하기 위한 에칭 조성물 및 방법 | |
| TWI721311B (zh) | 於製造一半導體裝置時用於相對氮化鈦選擇性移除氮化鉭的蝕刻組合物 | |
| IL175261A (en) | Cleaning solutions and etchants and methods for using same | |
| CN114651317B (zh) | 蚀刻组合物 | |
| US12110435B2 (en) | Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device | |
| TW202346541A (zh) | 用於多晶矽挖掘的配製鹼性化學物質 |