KR20240101577A - 헤테로 에피택셜 웨이퍼의 제조방법 - Google Patents

헤테로 에피택셜 웨이퍼의 제조방법 Download PDF

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Publication number
KR20240101577A
KR20240101577A KR1020247014975A KR20247014975A KR20240101577A KR 20240101577 A KR20240101577 A KR 20240101577A KR 1020247014975 A KR1020247014975 A KR 1020247014975A KR 20247014975 A KR20247014975 A KR 20247014975A KR 20240101577 A KR20240101577 A KR 20240101577A
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KR
South Korea
Prior art keywords
single crystal
sic
film
sic single
growth
Prior art date
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Pending
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KR1020247014975A
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English (en)
Korean (ko)
Inventor
토시키 마츠바라
아츠시 스즈키
츠요시 오츠키
타츠오 아베
Original Assignee
신에쯔 한도타이 가부시키가이샤
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Publication of KR20240101577A publication Critical patent/KR20240101577A/ko
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020247014975A 2021-11-08 2022-10-01 헤테로 에피택셜 웨이퍼의 제조방법 Pending KR20240101577A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-182078 2021-11-08
JP2021182078 2021-11-08
PCT/JP2022/036878 WO2023079880A1 (ja) 2021-11-08 2022-10-01 ヘテロエピタキシャルウェーハの製造方法

Publications (1)

Publication Number Publication Date
KR20240101577A true KR20240101577A (ko) 2024-07-02

Family

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Family Applications (1)

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KR1020247014975A Pending KR20240101577A (ko) 2021-11-08 2022-10-01 헤테로 에피택셜 웨이퍼의 제조방법

Country Status (6)

Country Link
EP (1) EP4431645A4 (enExample)
JP (1) JPWO2023079880A1 (enExample)
KR (1) KR20240101577A (enExample)
CN (1) CN118202096A (enExample)
TW (1) TW202323576A (enExample)
WO (1) WO2023079880A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7619349B2 (ja) * 2022-09-16 2025-01-22 信越半導体株式会社 窒化物半導体層付き単結晶シリコン基板及び窒化物半導体層付き単結晶シリコン基板の製造方法
CN119877097A (zh) * 2023-11-27 2025-04-25 保定市北方特种气体有限公司 烷基硅烷制备芯片用碳化硅外延片的方法
CN120321995B (zh) * 2025-06-11 2025-09-09 比亚迪股份有限公司 碳化硅外延片及其制备方法和功率器件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3557457B2 (ja) * 2001-02-01 2004-08-25 東北大学長 ＳｉＣ膜の製造方法、及びＳｉＣ多層膜構造の製造方法
JP4283478B2 (ja) * 2002-01-28 2009-06-24 コバレントマテリアル株式会社 電子素子基板上へのＳｉＣ単結晶の成長方法
JP2006036613A (ja) * 2004-07-30 2006-02-09 Nagaoka Univ Of Technology ケイ素基板上に立方晶炭化ケイ素結晶膜を形成する方法
JP2016092399A (ja) * 2014-10-31 2016-05-23 セイコーエプソン株式会社 炭化ケイ素膜付き基板、炭化ケイ素膜付き基板の製造方法、及び、半導体装置
JP6898222B2 (ja) * 2017-12-27 2021-07-07 エア・ウォーター株式会社 化合物半導体基板

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
Appl. Phys. Lett., 88, 091901(2006)
J. Crystal. Growth, 154, 303 (1995)
J. Crystal. Growth, 179, 153 (1997)
J. Electrochem. Soc, 139, 3565 (1992)
Jpn. J. Appl. Phys., 55, 05FB06 (2016)

Also Published As

Publication number Publication date
CN118202096A (zh) 2024-06-14
TW202323576A (zh) 2023-06-16
WO2023079880A1 (ja) 2023-05-11
EP4431645A4 (en) 2025-10-08
JPWO2023079880A1 (enExample) 2023-05-11
EP4431645A1 (en) 2024-09-18

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PA0105 International application

Patent event date: 20240503

Patent event code: PA01051R01D

Comment text: International Patent Application

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