KR20240056414A - 웨이퍼 온도 제어 장치, 웨이퍼 온도 제어 방법 및 웨이퍼 온도 제어 프로그램 - Google Patents

웨이퍼 온도 제어 장치, 웨이퍼 온도 제어 방법 및 웨이퍼 온도 제어 프로그램 Download PDF

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Publication number
KR20240056414A
KR20240056414A KR1020230131680A KR20230131680A KR20240056414A KR 20240056414 A KR20240056414 A KR 20240056414A KR 1020230131680 A KR1020230131680 A KR 1020230131680A KR 20230131680 A KR20230131680 A KR 20230131680A KR 20240056414 A KR20240056414 A KR 20240056414A
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KR
South Korea
Prior art keywords
temperature
wafer
nearby
pressure
estimated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020230131680A
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English (en)
Korean (ko)
Inventor
다이스케 하야시
고타로 다키지리
Original Assignee
가부시키가이샤 호리바 에스텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 호리바 에스텍 filed Critical 가부시키가이샤 호리바 에스텍
Publication of KR20240056414A publication Critical patent/KR20240056414A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B6/00—Internal feedback arrangements for obtaining particular characteristics, e.g. proportional, integral or differential
    • G05B6/02—Internal feedback arrangements for obtaining particular characteristics, e.g. proportional, integral or differential electric
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1919—Control of temperature characterised by the use of electric means characterised by the type of controller
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Temperature (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Control Of Resistance Heating (AREA)
KR1020230131680A 2022-10-21 2023-10-04 웨이퍼 온도 제어 장치, 웨이퍼 온도 제어 방법 및 웨이퍼 온도 제어 프로그램 Pending KR20240056414A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2022-169033 2022-10-21
JP2022169033A JP2024061227A (ja) 2022-10-21 2022-10-21 ウエハ温度制御装置、ウエハ温度制御方法及びウエハ温度制御プログラム

Publications (1)

Publication Number Publication Date
KR20240056414A true KR20240056414A (ko) 2024-04-30

Family

ID=90729820

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020230131680A Pending KR20240056414A (ko) 2022-10-21 2023-10-04 웨이퍼 온도 제어 장치, 웨이퍼 온도 제어 방법 및 웨이퍼 온도 제어 프로그램

Country Status (5)

Country Link
US (1) US12463069B2 (enExample)
JP (1) JP2024061227A (enExample)
KR (1) KR20240056414A (enExample)
CN (1) CN117917757A (enExample)
TW (1) TW202433204A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD1066620S1 (en) * 2021-02-12 2025-03-11 Applied Materials, Inc. Patterned heater pedestal with groove extensions
JP2022125685A (ja) * 2021-02-17 2022-08-29 株式会社Kelk 半導体ウエハの温度制御装置及び半導体ウエハの温度制御方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021019066A (ja) 2019-07-19 2021-02-15 東京エレクトロン株式会社 温度制御装置、温度制御方法、および検査装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6140612A (en) 1995-06-07 2000-10-31 Lam Research Corporation Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
JP2000277237A (ja) * 1999-03-24 2000-10-06 Komatsu Ltd 基板温度制御プレート及びそれを備える基板温度制御装置
US6353210B1 (en) * 2000-04-11 2002-03-05 Applied Materials Inc. Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe
US12020960B2 (en) 2018-04-12 2024-06-25 Lam Research Corporation Determining and controlling substrate temperature during substrate processing

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021019066A (ja) 2019-07-19 2021-02-15 東京エレクトロン株式会社 温度制御装置、温度制御方法、および検査装置

Also Published As

Publication number Publication date
US20240234186A9 (en) 2024-07-11
US12463069B2 (en) 2025-11-04
JP2024061227A (ja) 2024-05-07
TW202433204A (zh) 2024-08-16
CN117917757A (zh) 2024-04-23
US20240136212A1 (en) 2024-04-25

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Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20231004

PG1501 Laying open of application