CN117917757A - 晶片温度控制装置、晶片温度控制方法和存储介质 - Google Patents

晶片温度控制装置、晶片温度控制方法和存储介质 Download PDF

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Publication number
CN117917757A
CN117917757A CN202311310939.3A CN202311310939A CN117917757A CN 117917757 A CN117917757 A CN 117917757A CN 202311310939 A CN202311310939 A CN 202311310939A CN 117917757 A CN117917757 A CN 117917757A
Authority
CN
China
Prior art keywords
temperature
wafer
vicinity
pressure
estimated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311310939.3A
Other languages
English (en)
Chinese (zh)
Inventor
林大介
瀧尻兴太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Horiba Stec Co Ltd
Original Assignee
Horiba Stec Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Horiba Stec Co Ltd filed Critical Horiba Stec Co Ltd
Publication of CN117917757A publication Critical patent/CN117917757A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B6/00—Internal feedback arrangements for obtaining particular characteristics, e.g. proportional, integral or differential
    • G05B6/02—Internal feedback arrangements for obtaining particular characteristics, e.g. proportional, integral or differential electric
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1919—Control of temperature characterised by the use of electric means characterised by the type of controller
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Temperature (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Control Of Resistance Heating (AREA)
CN202311310939.3A 2022-10-21 2023-10-10 晶片温度控制装置、晶片温度控制方法和存储介质 Pending CN117917757A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-169033 2022-10-20
JP2022169033A JP2024061227A (ja) 2022-10-21 2022-10-21 ウエハ温度制御装置、ウエハ温度制御方法及びウエハ温度制御プログラム

Publications (1)

Publication Number Publication Date
CN117917757A true CN117917757A (zh) 2024-04-23

Family

ID=90729820

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311310939.3A Pending CN117917757A (zh) 2022-10-21 2023-10-10 晶片温度控制装置、晶片温度控制方法和存储介质

Country Status (5)

Country Link
US (1) US12463069B2 (enExample)
JP (1) JP2024061227A (enExample)
KR (1) KR20240056414A (enExample)
CN (1) CN117917757A (enExample)
TW (1) TW202433204A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD1066620S1 (en) * 2021-02-12 2025-03-11 Applied Materials, Inc. Patterned heater pedestal with groove extensions
JP2022125685A (ja) * 2021-02-17 2022-08-29 株式会社Kelk 半導体ウエハの温度制御装置及び半導体ウエハの温度制御方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6140612A (en) 1995-06-07 2000-10-31 Lam Research Corporation Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
JP2000277237A (ja) * 1999-03-24 2000-10-06 Komatsu Ltd 基板温度制御プレート及びそれを備える基板温度制御装置
US6353210B1 (en) * 2000-04-11 2002-03-05 Applied Materials Inc. Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe
US12020960B2 (en) 2018-04-12 2024-06-25 Lam Research Corporation Determining and controlling substrate temperature during substrate processing
JP7266481B2 (ja) 2019-07-19 2023-04-28 東京エレクトロン株式会社 温度制御装置、温度制御方法、および検査装置

Also Published As

Publication number Publication date
US20240234186A9 (en) 2024-07-11
US12463069B2 (en) 2025-11-04
JP2024061227A (ja) 2024-05-07
KR20240056414A (ko) 2024-04-30
TW202433204A (zh) 2024-08-16
US20240136212A1 (en) 2024-04-25

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