JP2024061227A - ウエハ温度制御装置、ウエハ温度制御方法及びウエハ温度制御プログラム - Google Patents

ウエハ温度制御装置、ウエハ温度制御方法及びウエハ温度制御プログラム Download PDF

Info

Publication number
JP2024061227A
JP2024061227A JP2022169033A JP2022169033A JP2024061227A JP 2024061227 A JP2024061227 A JP 2024061227A JP 2022169033 A JP2022169033 A JP 2022169033A JP 2022169033 A JP2022169033 A JP 2022169033A JP 2024061227 A JP2024061227 A JP 2024061227A
Authority
JP
Japan
Prior art keywords
temperature
wafer
pressure
estimated
heat transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022169033A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024061227A5 (enExample
Inventor
大介 林
Daisuke Hayashi
興太郎 瀧尻
Kotaro Takijiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Horiba Stec Co Ltd
Original Assignee
Horiba Stec Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Horiba Stec Co Ltd filed Critical Horiba Stec Co Ltd
Priority to JP2022169033A priority Critical patent/JP2024061227A/ja
Priority to KR1020230131680A priority patent/KR20240056414A/ko
Priority to CN202311310939.3A priority patent/CN117917757A/zh
Priority to US18/484,626 priority patent/US12463069B2/en
Priority to TW112139148A priority patent/TW202433204A/zh
Publication of JP2024061227A publication Critical patent/JP2024061227A/ja
Publication of JP2024061227A5 publication Critical patent/JP2024061227A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B6/00—Internal feedback arrangements for obtaining particular characteristics, e.g. proportional, integral or differential
    • G05B6/02—Internal feedback arrangements for obtaining particular characteristics, e.g. proportional, integral or differential electric
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1919—Control of temperature characterised by the use of electric means characterised by the type of controller
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Temperature (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Control Of Resistance Heating (AREA)
JP2022169033A 2022-10-21 2022-10-21 ウエハ温度制御装置、ウエハ温度制御方法及びウエハ温度制御プログラム Pending JP2024061227A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2022169033A JP2024061227A (ja) 2022-10-21 2022-10-21 ウエハ温度制御装置、ウエハ温度制御方法及びウエハ温度制御プログラム
KR1020230131680A KR20240056414A (ko) 2022-10-21 2023-10-04 웨이퍼 온도 제어 장치, 웨이퍼 온도 제어 방법 및 웨이퍼 온도 제어 프로그램
CN202311310939.3A CN117917757A (zh) 2022-10-21 2023-10-10 晶片温度控制装置、晶片温度控制方法和存储介质
US18/484,626 US12463069B2 (en) 2022-10-21 2023-10-11 Wafer temperature control device, wafer temperature control method, and wafer temperature control program
TW112139148A TW202433204A (zh) 2022-10-21 2023-10-13 晶片溫度控制裝置、晶片溫度控制方法和儲存媒體

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022169033A JP2024061227A (ja) 2022-10-21 2022-10-21 ウエハ温度制御装置、ウエハ温度制御方法及びウエハ温度制御プログラム

Publications (2)

Publication Number Publication Date
JP2024061227A true JP2024061227A (ja) 2024-05-07
JP2024061227A5 JP2024061227A5 (enExample) 2025-01-28

Family

ID=90729820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022169033A Pending JP2024061227A (ja) 2022-10-21 2022-10-21 ウエハ温度制御装置、ウエハ温度制御方法及びウエハ温度制御プログラム

Country Status (5)

Country Link
US (1) US12463069B2 (enExample)
JP (1) JP2024061227A (enExample)
KR (1) KR20240056414A (enExample)
CN (1) CN117917757A (enExample)
TW (1) TW202433204A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD1066620S1 (en) * 2021-02-12 2025-03-11 Applied Materials, Inc. Patterned heater pedestal with groove extensions
JP2022125685A (ja) * 2021-02-17 2022-08-29 株式会社Kelk 半導体ウエハの温度制御装置及び半導体ウエハの温度制御方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11507473A (ja) * 1995-06-07 1999-06-29 ラム リサーチ コーポレイション ウエハの温度制御方法及び装置
JP2000277237A (ja) * 1999-03-24 2000-10-06 Komatsu Ltd 基板温度制御プレート及びそれを備える基板温度制御装置
JP2011135097A (ja) * 2000-04-11 2011-07-07 Applied Materials Inc 原位置ウェーハ温度光プローブを用いた連続ウェーハ温度計測に基づくプラズマ・リアクタにおけるウェーハ温度ドリフトの修正
JP2021521640A (ja) * 2018-04-12 2021-08-26 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 基板処理中の基板温度の決定および制御

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7266481B2 (ja) 2019-07-19 2023-04-28 東京エレクトロン株式会社 温度制御装置、温度制御方法、および検査装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11507473A (ja) * 1995-06-07 1999-06-29 ラム リサーチ コーポレイション ウエハの温度制御方法及び装置
JP2000277237A (ja) * 1999-03-24 2000-10-06 Komatsu Ltd 基板温度制御プレート及びそれを備える基板温度制御装置
JP2011135097A (ja) * 2000-04-11 2011-07-07 Applied Materials Inc 原位置ウェーハ温度光プローブを用いた連続ウェーハ温度計測に基づくプラズマ・リアクタにおけるウェーハ温度ドリフトの修正
JP2021521640A (ja) * 2018-04-12 2021-08-26 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 基板処理中の基板温度の決定および制御

Also Published As

Publication number Publication date
US12463069B2 (en) 2025-11-04
KR20240056414A (ko) 2024-04-30
US20240234186A9 (en) 2024-07-11
CN117917757A (zh) 2024-04-23
TW202433204A (zh) 2024-08-16
US20240136212A1 (en) 2024-04-25

Similar Documents

Publication Publication Date Title
US12272575B2 (en) Advanced temperature control for wafer carrier in plasma processing chamber
JP7301903B2 (ja) 比例式熱流体送達システムを使用した基板キャリア
JP2024061227A (ja) ウエハ温度制御装置、ウエハ温度制御方法及びウエハ温度制御プログラム
US20240258139A1 (en) Wafer temperature control device, wafer temperature control method and wafer temperature control program
TW201143542A (en) Feedforward temperature control for plasma processing apparatus
JP4391518B2 (ja) 温度制御方法、調整装置、温度調節器、プログラム、記録媒体および加熱処理装置
US10629463B2 (en) Thermal processing apparatus and thermal processing method
US20250372417A1 (en) Wafer temperature control device, control method for wafer temperature control device, and program for wafer temperature control device
JP2016053863A (ja) 温度調節装置
US12278126B2 (en) Plasma processing apparatus, thermal resistance acquisition method, and thermal resistance acquisition program
CN113846376A (zh) 外延生长装置的调温方法以及外延生长装置
US20250006524A1 (en) Wafer temperature control device, wafer temperature control method and wafer temperature control program
JP2003229348A (ja) 半導体露光装置
US20250218736A1 (en) Apparatus and method for controlling temperature
US20250183018A1 (en) Parameter estimation system, parameter estimation method, storage medium, and substrate processing apparatus
WO1999040497A1 (fr) Regulateur de temperature pour appareil de chauffage a separation de zones
JP2025140064A (ja) 流体制御装置、流体制御装置用制御ユニット、流体制御方法、及び、流体制御プログラム

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20241220

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250819

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20250821

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250924

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20251216