KR20240054413A - 반도체 프로세싱 동안 기판들 상에 자기장들을 생성하기 위한 장치 - Google Patents
반도체 프로세싱 동안 기판들 상에 자기장들을 생성하기 위한 장치 Download PDFInfo
- Publication number
- KR20240054413A KR20240054413A KR1020247012766A KR20247012766A KR20240054413A KR 20240054413 A KR20240054413 A KR 20240054413A KR 1020247012766 A KR1020247012766 A KR 1020247012766A KR 20247012766 A KR20247012766 A KR 20247012766A KR 20240054413 A KR20240054413 A KR 20240054413A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- support assembly
- permanent magnets
- magnetic field
- plate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 184
- 238000012545 processing Methods 0.000 title description 12
- 239000004065 semiconductor Substances 0.000 title description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 85
- 239000000463 material Substances 0.000 claims abstract description 34
- 150000002500 ions Chemical class 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 43
- 230000008569 process Effects 0.000 claims description 40
- 230000000712 assembly Effects 0.000 claims description 12
- 238000000429 assembly Methods 0.000 claims description 12
- KPLQYGBQNPPQGA-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Sm] KPLQYGBQNPPQGA-UHFFFAOYSA-N 0.000 claims description 8
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 claims description 8
- 238000005019 vapor deposition process Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 abstract description 23
- 238000007740 vapor deposition Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 description 24
- 238000004804 winding Methods 0.000 description 22
- 239000000696 magnetic material Substances 0.000 description 12
- 238000001816 cooling Methods 0.000 description 9
- 238000010943 off-gassing Methods 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910001094 6061 aluminium alloy Inorganic materials 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000005596 ionic collisions Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/507,122 US12027352B2 (en) | 2021-10-21 | Apparatus for generating magnetic fields on substrates during semiconductor processing | |
| US17/507,122 | 2021-10-21 | ||
| PCT/US2022/036312 WO2023069158A1 (en) | 2021-10-21 | 2022-07-07 | Apparatus for generating magnetic fields on substrates during semiconductor processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240054413A true KR20240054413A (ko) | 2024-04-25 |
Family
ID=86058497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247012766A KR20240054413A (ko) | 2021-10-21 | 2022-07-07 | 반도체 프로세싱 동안 기판들 상에 자기장들을 생성하기 위한 장치 |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20240054413A (zh) |
| CN (1) | CN118103544A (zh) |
| TW (1) | TW202317796A (zh) |
| WO (1) | WO2023069158A1 (zh) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11172432A (ja) * | 1997-12-16 | 1999-06-29 | Hitachi Ltd | 磁性膜形成装置 |
| US6864773B2 (en) * | 2003-04-04 | 2005-03-08 | Applied Materials, Inc. | Variable field magnet apparatus |
| US8919279B1 (en) * | 2010-09-30 | 2014-12-30 | WD Media, LLC | Processing system having magnet keeper |
| US8431033B2 (en) * | 2010-12-21 | 2013-04-30 | Novellus Systems, Inc. | High density plasma etchback process for advanced metallization applications |
| CN102953035B (zh) * | 2012-11-02 | 2014-04-09 | 温州职业技术学院 | 多模式交变耦合磁场辅助电弧离子镀沉积弧源设备 |
| CN108010718B (zh) * | 2016-10-31 | 2020-10-13 | 北京北方华创微电子装备有限公司 | 磁性薄膜沉积腔室及薄膜沉积设备 |
-
2022
- 2022-07-07 TW TW111125521A patent/TW202317796A/zh unknown
- 2022-07-07 WO PCT/US2022/036312 patent/WO2023069158A1/en unknown
- 2022-07-07 KR KR1020247012766A patent/KR20240054413A/ko unknown
- 2022-07-07 CN CN202280065542.XA patent/CN118103544A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023069158A1 (en) | 2023-04-27 |
| CN118103544A (zh) | 2024-05-28 |
| TW202317796A (zh) | 2023-05-01 |
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