KR20240037943A - 촬상 장치 - Google Patents

촬상 장치 Download PDF

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Publication number
KR20240037943A
KR20240037943A KR1020247000479A KR20247000479A KR20240037943A KR 20240037943 A KR20240037943 A KR 20240037943A KR 1020247000479 A KR1020247000479 A KR 1020247000479A KR 20247000479 A KR20247000479 A KR 20247000479A KR 20240037943 A KR20240037943 A KR 20240037943A
Authority
KR
South Korea
Prior art keywords
filter
light
refractive index
imaging device
guide member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247000479A
Other languages
English (en)
Korean (ko)
Inventor
가이토 요코치
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 세미컨덕터 솔루션즈 가부시키가이샤 filed Critical 소니 세미컨덕터 솔루션즈 가부시키가이샤
Publication of KR20240037943A publication Critical patent/KR20240037943A/ko
Pending legal-status Critical Current

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Classifications

    • H01L27/14621—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H01L27/14625—
    • H01L27/14638—
    • H01L27/14643—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Blocking Light For Cameras (AREA)
  • Optical Filters (AREA)
KR1020247000479A 2021-08-06 2022-07-22 촬상 장치 Pending KR20240037943A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-129694 2021-08-06
JP2021129694 2021-08-06
PCT/JP2022/028471 WO2023013444A1 (ja) 2021-08-06 2022-07-22 撮像装置

Publications (1)

Publication Number Publication Date
KR20240037943A true KR20240037943A (ko) 2024-03-22

Family

ID=85155543

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247000479A Pending KR20240037943A (ko) 2021-08-06 2022-07-22 촬상 장치

Country Status (5)

Country Link
US (2) US20240321917A1 (https=)
JP (1) JPWO2023013444A1 (https=)
KR (1) KR20240037943A (https=)
TW (1) TW202312477A (https=)
WO (1) WO2023013444A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN217386086U (zh) * 2022-05-25 2022-09-06 天津山河光电科技有限公司 感光组件、成像系统及光学电子设备
US20240322056A1 (en) * 2023-03-21 2024-09-26 Visera Technologies Company Ltd. Optical device
WO2025094771A1 (ja) * 2023-11-02 2025-05-08 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
CN117238941B (zh) * 2023-11-15 2024-02-20 合肥晶合集成电路股份有限公司 背照式图像传感器及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013175494A (ja) 2011-03-02 2013-09-05 Sony Corp 固体撮像装置、固体撮像装置の製造方法及び電子機器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013156463A (ja) * 2012-01-31 2013-08-15 Fujifilm Corp 撮像素子
JP2013165216A (ja) * 2012-02-13 2013-08-22 Fujifilm Corp 撮像素子
JP6103301B2 (ja) * 2013-07-03 2017-03-29 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2015076475A (ja) * 2013-10-08 2015-04-20 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2020017791A (ja) * 2018-07-23 2020-01-30 シャープ株式会社 固体撮像装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013175494A (ja) 2011-03-02 2013-09-05 Sony Corp 固体撮像装置、固体撮像装置の製造方法及び電子機器

Also Published As

Publication number Publication date
US20260075974A1 (en) 2026-03-12
US20240321917A1 (en) 2024-09-26
TW202312477A (zh) 2023-03-16
JPWO2023013444A1 (https=) 2023-02-09
WO2023013444A1 (ja) 2023-02-09

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Date Code Title Description
PA0105 International application

Patent event date: 20240105

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application