KR20240027027A - Solder paste and manufacturing methods for electronic devices - Google Patents
Solder paste and manufacturing methods for electronic devices Download PDFInfo
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- KR20240027027A KR20240027027A KR1020247002716A KR20247002716A KR20240027027A KR 20240027027 A KR20240027027 A KR 20240027027A KR 1020247002716 A KR1020247002716 A KR 1020247002716A KR 20247002716 A KR20247002716 A KR 20247002716A KR 20240027027 A KR20240027027 A KR 20240027027A
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- South Korea
- Prior art keywords
- solder paste
- acid
- solder
- temperature
- sec
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- HOPSCVCBEOCPJZ-UHFFFAOYSA-N carboxymethyl(trimethyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)CC(O)=O HOPSCVCBEOCPJZ-UHFFFAOYSA-N 0.000 description 1
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- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Substances C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
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- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229960004488 linolenic acid Drugs 0.000 description 1
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 1
- 239000006224 matting agent Substances 0.000 description 1
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- XMYQHJDBLRZMLW-UHFFFAOYSA-N methanolamine Chemical class NCO XMYQHJDBLRZMLW-UHFFFAOYSA-N 0.000 description 1
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- FZPXKEPZZOEPGX-UHFFFAOYSA-N n,n-dibutylaniline Chemical compound CCCCN(CCCC)C1=CC=CC=C1 FZPXKEPZZOEPGX-UHFFFAOYSA-N 0.000 description 1
- SPQWAFOMVNLPNC-UHFFFAOYSA-N n,n-diethylaniline;hydrobromide Chemical compound Br.CCN(CC)C1=CC=CC=C1 SPQWAFOMVNLPNC-UHFFFAOYSA-N 0.000 description 1
- PQCWTNQXCXUEAO-UHFFFAOYSA-N n,n-diethylaniline;hydron;chloride Chemical compound Cl.CCN(CC)C1=CC=CC=C1 PQCWTNQXCXUEAO-UHFFFAOYSA-N 0.000 description 1
- IRWYBDSPYORANH-UHFFFAOYSA-N n,n-dimethylcyclohexanamine;hydrobromide Chemical compound Br.CN(C)C1CCCCC1 IRWYBDSPYORANH-UHFFFAOYSA-N 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- OKQVTLCUHATGDD-UHFFFAOYSA-N n-(benzotriazol-1-ylmethyl)-2-ethyl-n-(2-ethylhexyl)hexan-1-amine Chemical compound C1=CC=C2N(CN(CC(CC)CCCC)CC(CC)CCCC)N=NC2=C1 OKQVTLCUHATGDD-UHFFFAOYSA-N 0.000 description 1
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- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- MLCHBQKMVKNBOV-UHFFFAOYSA-N phenylphosphinic acid Chemical compound OP(=O)C1=CC=CC=C1 MLCHBQKMVKNBOV-UHFFFAOYSA-N 0.000 description 1
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- CBPYOHALYYGNOE-UHFFFAOYSA-M potassium;3,5-dinitrobenzoate Chemical compound [K+].[O-]C(=O)C1=CC([N+]([O-])=O)=CC([N+]([O-])=O)=C1 CBPYOHALYYGNOE-UHFFFAOYSA-M 0.000 description 1
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- ISYORFGKSZLPNW-UHFFFAOYSA-N propan-2-ylazanium;chloride Chemical compound [Cl-].CC(C)[NH3+] ISYORFGKSZLPNW-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- BBFCIBZLAVOLCF-UHFFFAOYSA-N pyridin-1-ium;bromide Chemical compound Br.C1=CC=NC=C1 BBFCIBZLAVOLCF-UHFFFAOYSA-N 0.000 description 1
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- 229920005792 styrene-acrylic resin Polymers 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
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- WJCNZQLZVWNLKY-UHFFFAOYSA-N thiabendazole Chemical compound S1C=NC(C=2NC3=CC=CC=C3N=2)=C1 WJCNZQLZVWNLKY-UHFFFAOYSA-N 0.000 description 1
- 229960001124 trientine Drugs 0.000 description 1
- NRTLTGGGUQIRRT-UHFFFAOYSA-N triethylazanium;bromide Chemical compound [Br-].CC[NH+](CC)CC NRTLTGGGUQIRRT-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3601—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with inorganic compounds as principal constituents
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
본 발명의 솔더 페이스트는, 플럭스 조성물과, 땜납 분말을 포함하는, 솔더 페이스트로서, 소정의 제작 절차에 따라서 당해 솔더 페이스트로부터 얻어진 플럭스 잔사에 대해서, 소정의 측정 조건에 근거하여 레오미터를 이용하여 측정한, 100℃에서의 저장 탄성률을 G'100, 손실 탄성률을 G''100으로 했을 때, G'100 및 G''100이, G'100>G''100을 만족시키도록 구성되는 것이다.The solder paste of the present invention is a solder paste containing a flux composition and solder powder, and the flux residue obtained from the solder paste according to a prescribed manufacturing procedure is measured using a rheometer based on prescribed measurement conditions. As long as the storage modulus at 100°C is G' 100 and the loss modulus is G'' 100 , G' 100 and G'' 100 are configured to satisfy G' 100 >G'' 100 .
Description
본 발명은, 솔더 페이스트 및 전자 장치의 제조 방법에 관한 것이다.The present invention relates to solder paste and methods for manufacturing electronic devices.
지금까지 솔더 페이스트에 대하여 여러가지 개발이 이루어져 왔다. 이 종류의 기술로서, 예를 들면, 특허문헌 1에 기재된 기술이 알려져 있다. 특허문헌 1에는, 연화점이 90℃ 이하인 로진계 수지를 포함하는 솔더 페이스트가 기재되어 있다.Until now, various developments have been made regarding solder paste. As a technology of this type, for example, the technology described in Patent Document 1 is known. Patent Document 1 describes a solder paste containing a rosin-based resin with a softening point of 90°C or lower.
그렇지만, 본 발명자가 검토한 결과, 상기 특허문헌 1에 기재된 솔더 페이스트에 있어서, 고온 마이그레이션의 점에서 개선의 여지가 있는 것이 판명되었다.However, as a result of examination by the present inventor, it was found that in the solder paste described in Patent Document 1, there is room for improvement in terms of high temperature migration.
근래, 디바이스의 고주력화에 수반하여, 디바이스 가동시의 온도도 100℃ 이상의 고온으로 되고 있다.In recent years, as devices have become more mainstream, the temperature during device operation has also become higher than 100°C.
본 발명자는, 상기 개발 사정을 근거로 하여 검토했는데, 솔더 페이스트를 리플로우 처리한 후에 잔존하는 플럭스 잔사에 대해서, 디바이스의 가동시에 생기는 고온의 열이력이 장시간에 걸쳐서 가해지면, 플럭스 잔사 중에 용출한 주석 이온 등이, 음극으로 이동하여 석출하여, 고온 마이그레이션이 일어나고, 그 결과, 절연 불량이 발생할 우려가 있는 것을 알아냈다. The present inventor studied the above development circumstances based on the results, and found that when the high temperature heat history generated during operation of the device is applied to the flux residue remaining after reflow processing of the solder paste over a long period of time, the flux residue is eluted. It was found that tin ions and the like migrate to the cathode and precipitate, causing high-temperature migration, and as a result, there is a risk of insulation failure.
이러한 지견에 근거하여 추가로 열심히 연구했는데, 솔더 페이스트 중의 플럭스 잔사의 점탄 특성을 적절히 제어하는 것에 의해서, 고온 마이그레이션을 억제할 수 있는 것을 알아내어, 본 발명을 완성하기에 이르렀다.Based on this knowledge, further research was conducted, and it was discovered that high-temperature migration could be suppressed by appropriately controlling the viscoelastic properties of the flux residue in the solder paste, leading to the completion of the present invention.
본 발명에 의하면, According to the present invention,
플럭스 조성물과, 땜납 분말을 포함하는, 솔더 페이스트로서, A solder paste comprising a flux composition and solder powder,
하기의 제작 절차에 따라서 당해 솔더 페이스트로부터 얻어진 플럭스 잔사에 대해서, 하기의 측정 조건에 근거하여 레오미터를 이용하여 측정한, 100℃에서의 저장 탄성률을 G'100, 손실 탄성률을 G''100으로 했을 때,For the flux residue obtained from the solder paste according to the production procedure below, the storage modulus at 100°C was measured as G'100 and the loss modulus as G''100 , measured using a rheometer based on the measurement conditions below. When I did it,
G'100 및 G''100이, G'100>G''100을 만족시키도록 구성되는, G' 100 and G'' 100 are configured to satisfy G' 100 >G'' 100 ,
솔더 페이스트가 제공된다. Solder paste is provided.
<플럭스 잔사의 제작 절차><Production procedure for flux residue>
1. 저면(底面)이 45 mmХ45 mm, 높이가 5 mm, 두께: 0.3 mm의 구리제(銅製) 트레이를 2개 준비한다. 1. Prepare two copper trays with a bottom of 45 mm x 45 mm, a height of 5 mm, and a thickness of 0.3 mm.
2. 한쪽의 상기 구리제 트레이의 저면 상에, 다른 쪽의 상기 구리제 트레이의 개구가 한쪽의 개구에 대향하도록 겹치고, 테이프로 고정하여, 높이가 약 10 mm의 구리제 박스를 준비한다.2. A copper box with a height of about 10 mm is prepared by overlapping the bottom of the copper tray on one side so that the opening of the copper tray on the other side is opposite to the opening on the other side and fixing it with tape.
3. 당해 솔더 페이스트를, 5 g 채취하여, 샘플로 한다. 이 샘플을, 한쪽의 상기 구리제 트레이의 내측의 저면 상에, 저면의 80%의 면적을 피복하도록 바른다. 3. 5 g of the solder paste is collected and used as a sample. This sample is applied to the inner bottom surface of one of the copper trays so as to cover 80% of the area of the bottom surface.
4. 상기 샘플 투입의 상기 구리제 박스에 대해서, 리플로우 로(爐)를 이용하여, 대기 하에서, 하기의 온도 프로파일 A~E의 리플로우 처치를 한다. 4. The copper box into which the sample is placed is subjected to reflow treatment with the following temperature profiles A to E under air using a reflow furnace.
(온도 프로파일 A~E) (Temperature profile A~E)
A. 실온 25℃에서 150℃까지, 1.9℃/sec의 승온 속도로 가열한다. A. Heat from room temperature 25℃ to 150℃ at a temperature increase rate of 1.9℃/sec.
B. 150℃~180℃ 온도역에서, 80 sec 유지한다. B. In the temperature range of 150℃~180℃, maintain for 80 sec.
C. 220℃까지, 1.2℃/sec의 승온 속도로 가열한다. C. Heat to 220°C at a temperature increase rate of 1.2°C/sec.
D. 220℃ 이상을 40 sec 유지하고, 피크 온도는 240℃로 가열한다. D. Maintain above 220℃ for 40 sec and heat to peak temperature of 240℃.
E. 그 후, 실온 25℃까지 냉각한다. E. Afterwards, cool to room temperature of 25°C.
5. 리플로우 처리 후, 한쪽의 상기 구리제 트레이의 내측의 저면 상에 잔존하는 플럭스 잔사를 채취한다. 5. After the reflow treatment, the flux residue remaining on the inner bottom surface of one of the copper trays is sampled.
<측정 조건><Measurement conditions>
측정 장치: 레오미터 Measuring device: rheometer
측정 온도: 20℃~180℃Measurement temperature: 20℃~180℃
지오메트리(상측): 25mmφ, 스텐레스제, 패러랠 플레이트 Geometry (upper side): 25mmϕ, stainless steel, parallel plate
플레이트(하측): 60mmφPlate (lower side): 60mmϕ
모드: 5℃/minMode: 5℃/min
변형: 1%Variation: 1%
주파수: 10HzFrequency: 10Hz
갭: 0.2mmGap: 0.2mm
또한 본 발명에 의하면, Also, according to the present invention,
상기의 솔더 페이스트를, 전자 회로 기판의 납땜 부위에 인쇄하는 공정과,A process of printing the above solder paste on a soldered portion of an electronic circuit board;
상기 납땜 부위에 전자 부품을 실장하는 공정과, A process of mounting electronic components on the soldering area,
상기 납땜 부위의 주위에 밀폐 구조가 존재하는 상태로, 상기 솔더 페이스트 중의 땜납 분말이 용융하는 온도까지 상기 납땜 부위를 가열하여 상기 전자 부품 및 상기 전자 회로 기판을 접합하는 공정A process of joining the electronic component and the electronic circuit board by heating the solder portion to a temperature at which the solder powder in the solder paste melts, with a sealed structure existing around the solder portion.
을 포함하는, 전자 장치의 제조 방법이 제공된다.A method of manufacturing an electronic device including a method is provided.
본 발명에 의하면, 고온 마이그레이션 내성으로 뛰어난 솔더 페이스트, 및 그것을 이용한 전자 장치의 제조 방법이 제공된다.According to the present invention, a solder paste excellent in high temperature migration resistance and a method of manufacturing an electronic device using the same are provided.
[도 1] 플럭스 잔사의 제작 방법을 설명하기 위한 도면이다.
[도 2] 고온 마이그레이션 시험을 설명하기 위한 도면이다.
[도 3] 플럭스 잔사 제작시의 표준 리플로우 프로파일을 나타낸다.[Figure 1] A diagram to explain the manufacturing method of flux residue.
[Figure 2] A diagram to explain the high temperature migration test.
[Figure 3] shows a standard reflow profile when producing flux residue.
이하, 본 발명의 실시 형태에 대해서, 도면을 이용하여 설명한다. 덧붙여, 모든 도면에 있어서, 동일한 구성 요소에는 동일한 부호를 붙이고, 적절히 설명을 생략한다. 또한, 도면은 개략도이며, 실제의 치수 비율과는 일치하고 있지 않다. EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention will be described using drawings. In addition, in all drawings, like components are given the same reference numerals and descriptions are omitted as appropriate. Additionally, the drawing is a schematic diagram and does not correspond to the actual dimensional ratio.
본 실시 형태의 솔더 페이스트의 개요를 설명한다. An outline of the solder paste of this embodiment will be described.
본 실시 형태의 솔더 페이스트는, 플럭스 조성물과, 땜납 분말을 포함하고, The solder paste of this embodiment includes a flux composition and solder powder,
하기의 제작 절차에 따라서 솔더 페이스트로부터 얻어진 플럭스 잔사에 대해서, 하기의 측정 조건에 근거하여 레오미터를 이용하여 측정한, 100℃에서의 저장 탄성률을 G'100, 손실 탄성률을 G''100으로 했을 때,The flux residue obtained from the solder paste according to the production procedure below was measured using a rheometer based on the measurement conditions below, and the storage modulus at 100°C was set to G'100 and the loss modulus was set to G''100 . at the time,
G'100 및 G''100이, G'100>G''100을 만족시키도록 구성된다. G' 100 and G'' 100 are configured to satisfy G' 100 >G'' 100 .
<플럭스 잔사의 제작 절차><Production procedure for flux residue>
1. 저면이 43~45 mmХ43~45 mm, 높이가 5~7 mm, 두께: 0.2~0.4 mm의 구리제 트레이를 2개 준비한다. 1. Prepare two copper trays with a bottom of 43 to 45 mm, a height of 5 to 7 mm, and a thickness of 0.2 to 0.4 mm.
2. 한쪽의 구리제 트레이의 저면 상에, 다른 쪽의 구리제 트레이의 개구가 한쪽의 개구에 대향하도록 겹치고, 테이프로 고정하여, 높이가 10~14 mm의 구리제 박스를 준비한다. 2. Prepare a copper box with a height of 10 to 14 mm by overlapping the bottom of one copper tray so that the opening of the other copper tray is opposite to the opening of one side and fixing it with tape.
3. 당해 솔더 페이스트를, 약 5 g 채취하여, 샘플로 한다. 이 샘플을, 한쪽의 구리제 트레이의 내측의 저면 상에, 저면의 약 80%의 면적을 피복하도록 바른다. 3. Approximately 5 g of the solder paste is collected and used as a sample. This sample is applied to the inner bottom of one copper tray so as to cover approximately 80% of the bottom.
4. 상기 샘플 투입의 구리제 박스에 대해서, 리플로우 로(센주 킨조쿠 코교사 제, SNR-825)를 이용하여, 대기 하에서, 하기의 온도 프로파일 A~E의 리플로우 처치를 한다. 4. The copper box for inserting the sample is subjected to reflow treatment using a reflow furnace (SNR-825, manufactured by Senju Kinzoku Kogyo Co., Ltd.) with the following temperature profiles A to E under air.
(온도 프로파일 A~E)(Temperature profile A~E)
A. 실온 25℃에서 150℃까지, 1.9℃/sec의 승온 속도로 가열한다. A. Heat from room temperature 25℃ to 150℃ at a temperature increase rate of 1.9℃/sec.
B. 150℃~180℃ 온도역에서, 80 sec 유지한다. B. In the temperature range of 150℃~180℃, maintain for 80 sec.
C. 220℃까지, 1.2℃/sec의 승온 속도로 가열한다. C. Heat to 220°C at a temperature increase rate of 1.2°C/sec.
D. 220℃ 이상을 40 sec 유지하고, 피크 온도는 240℃로 가열한다. D. Maintain above 220℃ for 40 sec and heat to peak temperature of 240℃.
E. 그 후, 실온 25℃까지 냉각한다. E. Afterwards, cool to room temperature of 25°C.
5. 리플로우 처리 후, 한쪽의 상기 구리제 트레이의 내측의 저면 상에 잔존하는 플럭스 잔사를 채취한다. 5. After the reflow treatment, the flux residue remaining on the inner bottom surface of one of the copper trays is sampled.
<측정 조건><Measurement conditions>
측정 장치: 레오미터(말번·파날리티칼사 제, KINEXUS 1b+)Measuring device: Rheometer (manufactured by Malvern Panalytical, KINEXUS 1b+)
측정 온도: 20℃~180℃Measurement temperature: 20℃~180℃
지오메트리(상측): 25mmφ, 스텐레스제, 패러랠 플레이트 Geometry (upper side): 25mmϕ, stainless steel, parallel plate
플레이트(하측): 60mmφPlate (lower side): 60mmϕ
모드: 5℃/minMode: 5℃/min
변형: 1%Variation: 1%
주파수: 10HzFrequency: 10Hz
갭: 0.2mmGap: 0.2mm
근래의 고출력 디바이스에서는, 발열 부품의 주위의 온도가 100℃ 이상이 되기도 한다. 통상, 100℃ 이상의 발열 부품의 주위는, 상습보다도 습도가 낮아지는 것으로부터, 이온 마이그레이션이 발생하기 어려운 환경 조건이라고 생각되고 있었지만, 저습도 환경 하에서도, 고출력 디바이스에서 이온 마이그레이션이 발생할 수 있는 것이 본 발명자에 의해서 확인되었다. In recent high-output devices, the temperature around the heat-generating components may be 100°C or higher. Normally, it was thought that ion migration is unlikely to occur around components that generate heat above 100°C because the humidity is lower than normal humidity, but we have seen that ion migration can occur in high-output devices even in low-humidity environments. Confirmed by the inventor.
그렇지만, 일반적인 이온 마이그레이션 시험은, 온도 85℃, 습도 85%의 조건 하에서 실시되고 있기 때문에, 상기의 실정에 대응하고 있다고는 말하기 어렵다.However, since the general ion migration test is conducted under the conditions of a temperature of 85°C and humidity of 85%, it is difficult to say that it corresponds to the above-mentioned situation.
여기서, 본 발명자는, 100℃ 이상의 온도 환경 하에서 금속 이온의 마이그레이션을 평가하는 고온 마이그레이션 시험을 새롭게 고안했다. 고온 마이그레이션 시험에서는, 습도가 20% 이하인 저습도 환경이나, 습도가 85% 이상인 고습도 환경 등의 환경 조건을 채용할 수 있다.Here, the present inventor devised a new high-temperature migration test to evaluate the migration of metal ions in a temperature environment of 100°C or higher. In the high-temperature migration test, environmental conditions such as a low-humidity environment with humidity of 20% or less or a high-humidity environment with humidity of 85% or more can be adopted.
본 발명자의 지견에 의하면, 솔더 페이스트 중의 플럭스 잔사의 점탄 특성을 적절히 제어하는 것에 의해서, 고온 마이그레이션을 억제할 수 있는 것이 발견되었다. 또한, 추가로 어려운 고습도 환경 하에 있어서도, 고온 마이그레이션을 억제하는 것이 가능한 것도 판명되었다.According to the present inventor's knowledge, it has been discovered that high temperature migration can be suppressed by appropriately controlling the viscoelastic properties of the flux residue in the solder paste. Additionally, it has also been found that it is possible to suppress high-temperature migration even under difficult high-humidity environments.
플럭스 잔사의 점탄 특성은, 상기의 제작 절차에서 얻어진 플럭스 잔사에 대해서, 상기의 측정 조건에 근거하여 레오미터를 이용하여 측정한, 100℃에서의 저장 탄성률을 G'100으로, 손실 탄성률을 G''100을 지표로서 이용하는 것에 의해, 안정적으로 평가하는 것이 가능하다. 이 점, 플럭스 잔사에 있어서의 점탄 특성과, 그것과 동일한 플럭스 잔사를 이용한 고온 마이그레이션 시험의 평가 결과와의 관계에 근거해서 증명되었다. The viscoelastic properties of the flux residue were measured using a rheometer based on the measurement conditions above for the flux residue obtained in the above production procedure, with the storage modulus at 100°C being G' 100 and the loss modulus being G'. ' By using 100 as an index, it is possible to make a stable evaluation. This point was proven based on the relationship between the viscoelastic properties of the flux residue and the evaluation results of a high-temperature migration test using the same flux residue.
그리고, 플럭스 잔사가 G'100 및 G''100이, G'100>G''100을 만족시키도록 솔더 페이스트를 구성하는 것에 의해서, 고온 마이그레이션을 억제할 수 있는 것이 판명되었다.It was found that high-temperature migration can be suppressed by configuring the solder paste so that the flux residue satisfies G' 100 and G'' 100 and G' 100 >G'' 100 .
상세한 메카니즘은 확실하지 않지만, 100℃에서의 저장 탄성을 손실 탄성률보다도 크게 하는 것에 의해, 고온시에 있어서의 변형을 억제하고, 유동성이 낮은 상태의 플럭스 잔사를 실현할 수 있기 때문에, 주석 이온 등의 금속 이온의 고온 마이그레이션을 억제할 수 있다고, 생각할 수 있다. Although the detailed mechanism is not clear, by making the storage elasticity at 100°C greater than the loss elastic modulus, deformation at high temperatures can be suppressed and a flux residue with low fluidity can be achieved, so that metals such as tin ions can be removed. It is conceivable that high temperature migration of ions can be suppressed.
상기 플럭스 잔사의 제작 절차에 있어서, 온도 프로파일은, 상기 (온도 프로파일 A~E)를 채용하지만, 필요에 따라서, 도 3의 표준 리플로우 프로파일에 준하여 설정해도 된다. 온도 프로파일 중의 온도는, 워크 온도를 가리킨다. In the procedure for producing the flux residue, the temperature profile above (temperature profiles A to E) is adopted, but may be set according to the standard reflow profile in FIG. 3, if necessary. The temperature in the temperature profile indicates the workpiece temperature.
리플로우 처치는, 히터를 이용하여, 열풍 순환시키는 방식을 채용해도 된다.The reflow treatment may employ a method of circulating hot air using a heater.
또한, 상기 플럭스 잔사의 제작 절차에 있어서, 샘플량은, 약 5 g이면 되고, 4.5~5.5 g을 허용할 수 있다. 구리제 트레이 상에 바른 면적은, 약 80%로 해도 되지만, 약 60% 이상이면, 플럭스 잔사를 채취 가능한 양을 취득할 수 있다. Additionally, in the procedure for producing the flux residue, the sample amount may be approximately 5 g, and 4.5 to 5.5 g may be permitted. The area applied on the copper tray may be about 80%, but if it is about 60% or more, a sampleable amount of flux residue can be obtained.
덧붙여, 구리제 트레이는, 두께 0.2~0.4 mm의 동판을 절곡하여 작성해도 된다.Additionally, the copper tray may be made by bending a copper plate with a thickness of 0.2 to 0.4 mm.
상기의 측정 조건에 근거하여 레오미터를 이용하여 측정한, 100℃에서의 저장 탄성률 및 손실 탄성률로부터 구해지는, 100℃의 위상각을 δ100으로 하고, 140℃에서의 저장 탄성률 및 손실 탄성률로부터 구해지는, 140℃의 위상각을 δ140으로 한다.The phase angle at 100°C is δ 100 , which is determined from the storage modulus and loss modulus at 100°C, measured using a rheometer based on the above measurement conditions, and is determined from the storage modulus and loss modulus at 140°C. At 140°C, the phase angle is set to δ 140 .
δ140의 하한은, 예를 들면, 1° 이상, 바람직하게는 2° 이상, 보다 바람직하게는 3° 이상이다. The lower limit of δ 140 is, for example, 1° or more, preferably 2° or more, and more preferably 3° or more.
한편, δ140의 상한은, 예를 들면, 45° 미만, 바람직하게는 44° 이하, 보다 바람직하게는 30° 이하이다. 이것에 의해, 100℃ 초과의 고온 동작 환경 하에 있어서의 고온 마이그레이션 내성을 향상할 수 있다. On the other hand, the upper limit of δ 140 is, for example, less than 45°, preferably less than 44°, and more preferably less than 30°. As a result, high-temperature migration resistance under a high-temperature operating environment exceeding 100°C can be improved.
δ140 및δ100은, 0.1≤δ140/δ100≤3.0을 만족시키도록 구성되어도 된다. δ 140 and δ 100 may be configured to satisfy 0.1 ≤ δ 140 / δ 100 ≤ 3.0.
δ140/δ100의 하한은, 예를 들면, 0.1 이상, 바람직하게는 0.15 이상, 보다 바람직하게는 0.2 이상이다. The lower limit of δ 140 /δ 100 is, for example, 0.1 or more, preferably 0.15 or more, and more preferably 0.2 or more.
한편, δ140/δ100의 상한은, 예를 들면, 3.0 이하, 바람직하게는 2.5 이하, 보다 바람직하게는 2.0 이하이다. On the other hand, the upper limit of δ 140 /δ 100 is, for example, 3.0 or less, preferably 2.5 or less, and more preferably 2.0 or less.
상기의 수치 범위 내로 하는 것에 의해, 100℃ 초과의 고온 동작 환경 하에 있어서의 고온 마이그레이션 내성을 향상할 수 있다. By keeping it within the above numerical range, high temperature migration resistance under a high temperature operating environment exceeding 100°C can be improved.
상기의 레오미터를 이용하여, 25℃에서의 솔더 페이스트의 점도를 측정하고, 전단 속도가 6 sec-1 때의 점도를 η1, 전단 속도가 1.8sec-1 때의 점도를 η2, 전단 속도가 18 sec-1 때의 점도를 η3으로 한다.Using the above rheometer, the viscosity of the solder paste at 25°C was measured, the viscosity at a shear rate of 6 sec -1 was η 1 , the viscosity at a shear rate of 1.8 sec -1 was η 2 , and the shear rate was η 2 The viscosity at 18 sec -1 is set to η 3 .
점도(η1)의 하한은, 예를 들면, 5 Pa·s 이상, 바람직하게는 20 Pa·s 이상, 보다 바람직하게는 50 Pa·s 이상이다. The lower limit of viscosity (η 1 ) is, for example, 5 Pa·s or more, preferably 20 Pa·s or more, and more preferably 50 Pa·s or more.
한편, 점도(η1)의 상한은, 예를 들면, 400 Pa·s 이하, 바람직하게는 300 Pa·s 이하, 보다 바람직하게는 280 Pa·s 이하이다. On the other hand, the upper limit of viscosity (η 1 ) is, for example, 400 Pa·s or less, preferably 300 Pa·s or less, and more preferably 280 Pa·s or less.
상기의 수치 범위 내로 하는 것에 의해, 솔더 페이스트의 인쇄 특성을 향상할 수 있다. By keeping the value within the above range, the printing characteristics of the solder paste can be improved.
Log(η2/η3)로 구해지는 칙소비의 하한은, 예를 들면, 0.3 이상, 바람직하게는 0.4 이상, 보다 바람직하게는 0.5 이상이다. The lower limit of the thixotropic ratio determined by Log(η 2 /η 3 ) is, for example, 0.3 or more, preferably 0.4 or more, and more preferably 0.5 or more.
한편, 상기 칙소비의 상한은, 예를 들면, 1.8 이하, 바람직하게는 1.5 이하, 보다 바람직하게는 1.0 이하이다. Meanwhile, the upper limit of the thixotropic ratio is, for example, 1.8 or less, preferably 1.5 or less, and more preferably 1.0 or less.
상기의 수치 범위 내로 하는 것에 의해, 솔더 페이스트의 인쇄 특성을 향상할 수 있다. By keeping the value within the above range, the printing characteristics of the solder paste can be improved.
본 실시 형태에서는, 예를 들어 솔더 페이스트 중에 포함되는 각 성분의 종류나 배합량, 솔더 페이스트의 조제 방법 등을 적절히 선택하는 것에 의해, 상기 100℃나 140℃의 저장 탄성률, 손실 탄성률, 위상각, 점도(η1) 및 칙소비를 제어하는 것이 가능하다. 이들 중에서도, 예를 들어, 고연화점의 제1 로진계 수지를 이용하는 것, 고연화점의 제1 로진계 수지의 함유량을 적절히 조정하는 것, 저연화점의 제3 로진계 수지를 사용하지 않는 것, 용제 및/또는 활성제의 함유량을 적절히 조정하는 것 등이, 상기 100℃나 140℃의 저장 탄성률, 손실 탄성률, 위상각, 점도(η1) 및 칙소비를 소망의 수치 범위로 하기 위한 요소로서 들 수 있다. In this embodiment, for example, by appropriately selecting the type and mixing amount of each component contained in the solder paste, the method for preparing the solder paste, etc., the storage elastic modulus, loss modulus, phase angle, and viscosity at 100°C or 140°C. It is possible to control (η 1 ) and thixotropic ratio. Among these, for example, using a first rosin-based resin with a high softening point, appropriately adjusting the content of the first rosin-based resin with a high softening point, not using a third rosin-based resin with a low softening point, and solvent and/or appropriately adjusting the content of the activator, etc. can be cited as factors for keeping the storage modulus, loss modulus, phase angle, viscosity (η 1 ), and thixotropic ratio at 100°C or 140°C within the desired numerical range. there is.
본 실시 형태의 솔더 페이스트는, 전자 회로 기판과 전자 부품과 접합하기 위해서 이용할 수 있지만, 특히, 전자 회로 기판과 전자 부품으로 구성되는 밀폐 구조의 주위로, 이들을 접합하기 위해서 이용해도 된다. 밀폐 구조 중에 플럭스 잔사가 잔존하는 경우에서도, 고온 마이그레이션을 억제하는 것이 가능하다. The solder paste of this embodiment can be used to join an electronic circuit board and electronic components, and may be particularly used to join the electronic circuit board and electronic components around a sealed structure composed of the electronic components. Even when flux residue remains in the sealed structure, high temperature migration can be suppressed.
또한, 이러한 솔더 페이스트는, 전자 회로 기판과 전자 부품과 접합 부위에 있어서의 디바이스 동작시의 발열 온도가 100℃ 이상이 되는 디바이스의 제조에 적합하게 사용할 수 있다.In addition, this solder paste can be suitably used in the manufacture of devices in which the heating temperature during device operation at the joint area between the electronic circuit board and the electronic component is 100°C or higher.
이하, 본 실시 형태의 솔더 페이스트의 구성을 상술한다. Hereinafter, the structure of the solder paste of this embodiment will be described in detail.
솔더 페이스트는, 플럭스 조성물과, 땜납 분말을 포함한다. Solder paste contains a flux composition and solder powder.
플럭스 조성물은, 활성제, 베이스 수지, 칙소제, 및 용제로 이루어지는 군으로부터 선택되는 1 또는 2 이상을 포함하도록 구성되어도 된다. The flux composition may be comprised to include one or two or more selected from the group consisting of an activator, a base resin, a thixotropic agent, and a solvent.
(활성제)(activator)
플럭스 조성물은, 금속 산화물을 제거하는 특성을 가지는, 활성제를 포함해도 된다. The flux composition may contain an activator that has the property of removing metal oxides.
활성제를 포함하는 것에 의해서, 땜납 접합 프로세스시의 땜납 젖음성을 높이는 것이 가능하다.By including an activator, it is possible to increase solder wettability during the solder joining process.
활성제의 구체예로서, 예를 들면, 유기산, 아민류, 할로겐계 활성제, 인계 활성제 등을 들 수 있다. 이들을 단독으로 이용해도 2종 이상을 조합하여 이용해도 된다. Specific examples of the activator include organic acids, amines, halogen-based activators, and phosphorus-based activators. These may be used individually or in combination of two or more types.
이들 활성제는, 상세한 메카니즘은 확실하지 않지만, 금속 산화물을 환원하고, 금속과의 염을 형성하는 것에 의해서, 땜납 및 납땜 대상의 금속 표면의 금속 산화막을 제거할 수 있다고 생각할 수 있다. Although the detailed mechanism of these activators is not clear, it is believed that they can remove the metal oxide film on the surface of the solder and the metal to be soldered by reducing the metal oxide and forming a salt with the metal.
플럭스 조성물 100 중량% 중의 활성제의 함유량은, 예를 들면, 0~30 중량%이어도 되고, 1~20 중량%이어도 된다. The content of the activator in 100% by weight of the flux composition may be, for example, 0 to 30% by weight or 1 to 20% by weight.
덧붙여, 본 명세서 중, 「~」는, 특별히 명시하지 않는 한, 상한치와 하한치를 포함하는 것을 나타낸다.In addition, in this specification, “~” indicates that the upper limit value and the lower limit value are included, unless otherwise specified.
유기산으로서는, 모노카르복시산, 디카르복시산, 디카르복시산의 무수물, 옥시산 등을 들 수 있다. 이들을 단독으로 이용해도 2종 이상을 조합하여 이용해도 된다. Examples of organic acids include monocarboxylic acids, dicarboxylic acids, dicarboxylic acid anhydrides, and oxy acids. These may be used individually or in combination of two or more types.
유기산의 구체예의 일례로서는, 예를 들면, 글루타르산, 아디핀산, 아젤라인산, 에이코산 2산, 구연산, 글리콜산, 숙신산, 살리실산, 디글리콜산, 디피코린산, 디부틸아닐린 디글리콜산, 스베린산, 세바신산, 티오글리콜산, 테레프탈산, 도데칸 2산, 파라히드록시페닐 아세트산, 피콜린산, 페닐 숙신산, 프탈산, 푸말산, 말레인산, 말론산, 라우린산, 벤조산, 주석산, 이소시아눌산 트리스(2-카르복시에틸), 글리신, 1,3-시클로헥산 디카르복시산, 2,2-비스(히드록시메틸) 프로피온산, 2,2-비스(히드록시메틸) 부탄산, 2,3-디히드록시벤조산, 2,4-디에틸 글루타르산, 2-퀴놀린 카르복시산, 3-히드록시벤조산, 사과산, p-아니스산, 스테아린산, 12-히드록시스테아린산, 올레인산, 리놀산, 리놀렌산 등을 들 수 있다.Specific examples of organic acids include, for example, glutaric acid, adipic acid, azelaic acid, eicosic acid, citric acid, glycolic acid, succinic acid, salicylic acid, diglycolic acid, dipicolinic acid, dibutylaniline diglycolic acid, Suberic acid, sebacic acid, thioglycolic acid, terephthalic acid, dodecane diacid, parahydroxyphenyl acetic acid, picolinic acid, phenyl succinic acid, phthalic acid, fumaric acid, maleic acid, malonic acid, lauric acid, benzoic acid, tartaric acid, iso Cyanuric acid tris(2-carboxyethyl), glycine, 1,3-cyclohexane dicarboxylic acid, 2,2-bis(hydroxymethyl)propionic acid, 2,2-bis(hydroxymethyl)butanoic acid, 2,3- Dihydroxybenzoic acid, 2,4-diethyl glutaric acid, 2-quinoline carboxylic acid, 3-hydroxybenzoic acid, malic acid, p-anisic acid, stearic acid, 12-hydroxystearic acid, oleic acid, linoleic acid, linolenic acid, etc. there is.
이 중에서도, 저(低)잔사성의 관점으로부터, 유기산은, 탄소수가 11 이하인 유기산을 포함해도 된다.Among these, from the viewpoint of low residue, the organic acid may include an organic acid having 11 or less carbon atoms.
탄소수가 11 이하인 유기산으로서는, 예를 들면, 글리콜산(탄소수 2), 티오글리콜산(탄소수 2), 글리신(탄소수 2), 말론산(탄소수 3), 프말산(탄소수 4), 말레인산(탄소수 4), 숙신산(탄소수 4), 디글리콜산(탄소수 4), 주석산(탄소수 4), 사과산(탄소수 4), 글루타르산(탄소수 5), 2,2-비스(히드록시메틸) 프로피온산(탄소수 5), 아디핀산(탄소수 6), 구연산(탄소수 6), 피콜린산(탄소수 6), 벤조산(탄소수 7), 2,2-비스(히드록시메틸) 부탄산(탄소수 6), 살리실산(탄소수 7), 디피콜린산(탄소수 7), 2,3-디히드록시벤조산(탄소수 7), 3-히드록시벤조산(탄소수 7), 수베르산(탄소수 8), 프탈산(탄소수 8), 이소프탈산(탄소수 8), 테레프탈산(탄소수 8), 파라히드록시페닐 아세트산(탄소수 8), 1,3-시클로헥산 디카르복시산(탄소수 8), p-아니스산(탄소수 8), 아제라인산(탄소수 9), 2,4-디에틸 글루타르산(탄소수 9), 세바신산(탄소수 10), 페닐 숙신산(탄소수 10), 2-퀴놀린 카르복시산(탄소수 10), 4-tert-부틸 벤조산(탄소수 11) 등을 들 수 있다.Organic acids with carbon atoms of 11 or less include, for example, glycolic acid (carbon number 2), thioglycolic acid (carbon number 2), glycine (carbon number 2), malonic acid (carbon number 3), fmalic acid (carbon number 4), and maleic acid (carbon number 4). ), succinic acid (4 carbon atoms), diglycolic acid (4 carbon atoms), tartaric acid (4 carbon atoms), malic acid (4 carbon atoms), glutaric acid (5 carbon atoms), 2,2-bis (hydroxymethyl) propionic acid (5 carbon atoms) ), adipic acid (carbon number 6), citric acid (carbon number 6), picolinic acid (carbon number 6), benzoic acid (carbon number 7), 2,2-bis(hydroxymethyl)butanoic acid (carbon number 6), salicylic acid (carbon number 7) ), dipicolinic acid (carbon number 7), 2,3-dihydroxybenzoic acid (carbon number 7), 3-hydroxybenzoic acid (carbon number 7), suberic acid (carbon number 8), phthalic acid (carbon number 8), isophthalic acid (carbon number 8) Carbon number 8), terephthalic acid (carbon number 8), parahydroxyphenyl acetic acid (carbon number 8), 1,3-cyclohexane dicarboxylic acid (carbon number 8), p-anisic acid (carbon number 8), azelaic acid (carbon number 9), 2 , 4-diethyl glutaric acid (9 carbon atoms), sebacic acid (10 carbon atoms), phenyl succinic acid (10 carbon atoms), 2-quinoline carboxylic acid (10 carbon atoms), 4-tert-butyl benzoic acid (11 carbon atoms), etc. there is.
또한, 유기산으로서는, 예를 들면, 다이머산, 트리머산, 다이머산에 수소를 첨가한 수첨물인 수소 첨가 다이머산, 트리머산에 수소를 첨가한 수첨물인 수소 첨가 트리머산을 들 수 있다.Additionally, examples of organic acids include dimer acid, trimeric acid, hydrogenated dimer acid, which is a hydrogenated product obtained by adding hydrogen to dimer acid, and hydrogenated trimeric acid, which is a hydrogenated product obtained by adding hydrogen to trimeric acid.
플럭스 조성물 100 중량% 중의 유기산의 함유량은, 예를 들면, 0~25 중량%이어도 되고, 1~20 중량%이어도 된다. 상기 상한치 이하로 하는 것에 의해, 플럭스 잔사의 점탄 특성을 적합한 것으로 할 수 있다.The content of the organic acid in 100% by weight of the flux composition may be, for example, 0 to 25% by weight or 1 to 20% by weight. By setting it below the above upper limit, the viscoelastic properties of the flux residue can be made suitable.
아민류로서는, 예를 들면, 모노에탄올 아민, 디페닐구아니딘, 에틸아민, 트리에틸아민, 에틸렌 디아민, 트리에틸렌 테트라민, 2-메틸이미다졸, 2-운데실이미다졸, 2-헵타데실이미다졸, 1,2-디메틸이미다졸, 2-에틸-4-메틸이미다졸, 2-페닐이미다졸, 2-페닐-4-메틸이미다졸, 1-벤질-2-메틸이미다졸, 1-벤질-2-페닐이미다졸, 1-시아노에틸-2-메틸이미다졸, 1-시아노에틸-2-운데실이미다졸, 1-시아노에틸-2-에틸-4-메틸이미다졸, 1-시아노에틸-2-페닐이미다졸, 1-시아노에틸-2-운데실이미다졸리움 트리메리테이트, 1-시아노에틸-2-페닐이미다졸리움 트리메리테이트, 2,4-디아미노-6-[2＇-메틸이미다졸일(1＇)]-에틸-s-트리아진, 2,4-디아미노-6-[2＇-운데실이미다졸일(1＇)]-에틸-s-트리아진, 2,4-디아미노-6-[2＇-에틸-4＇-메틸이미다졸일(1＇)]-에틸-s-트리아진, 2,4-디아미노-6-[2＇-메틸이미다졸일(1＇)]-에틸-s-트리아진 이소시아눌산 부가물, 2-페닐이미다졸 이소시아눌산 부가물, 2-페닐-4,5-디히드록시메틸이미다졸, 2-페닐-4-메틸-5-히드록시메틸이미다졸, 2,3-디히드로-1H-피로로[1,2-a]벤즈 이미다졸, 1-도데실-2-메틸-3-벤질 이미다졸리움 클로라이드, 2-메틸이미다졸인, 2-페닐이미다졸인, 2,4-디아미노-6-비닐-s-트리아진, 2,4-디아미노-6-비닐-s-트리아진 이소시아눌산 부가물, 2,4-디아미노-6-메타크릴로일옥시에틸-s-트리아진, 에폭시-이미다졸 어덕트, 2-메틸벤조이미다졸, 2-옥틸벤조이미다졸, 2-펜틸벤조이미다졸, 2-(1-에틸펜틸) 벤조이미다졸, 2-노닐벤조이미다졸, 2-(4-티아졸일) 벤조이미다졸, 벤조이미다졸, 2-(2＇-히드록시-5＇-메틸페닐) 벤조트리아졸, 2-(2＇-히드록시-3´-tert-부틸-5＇-메틸페닐)-5-클로로벤조트리아졸, 2-(2＇-히드록시-3´,5＇-디-tert-아밀페닐) 벤조트리아졸, 2-(2＇-히드록시-5´-tert-옥틸페닐) 벤조트리아졸, 2,2＇-메틸렌 비스[6-(2H-벤조트리아졸-2-일)-4-tert-옥틸페놀], 6-(2-벤조트리아졸일)-4-tert-옥틸-6´-tert-부틸-4＇-메틸-2,2＇-메틸렌 비스페놀,1,2,3-벤조트리아졸, 1-[N,N-비스(2-에틸헥실) 아미노메틸]벤조트리아졸, 카르복시벤조트리아졸, 1-[N,N-비스(2-에틸헥실) 아미노메틸]메틸벤조트리아졸, 2,2＇-[[(메틸-1H-벤조트리아졸-1-일) 메틸]이미노]비스에탄올, 1-(1´,2＇-디카르복시에틸) 벤조트리아졸, 1-(2,3-디카르복시프로필) 벤조트리아졸, 1-[(2-에틸헥실아미노) 메틸]벤조트리아졸, 2,6-비스[(1H-벤조트리아졸-1-일) 메틸]-4-메틸페놀, 5-메틸벤조트리아졸, 5-페닐테트라졸 등을 들 수 있다.Amines include, for example, monoethanol amine, diphenylguanidine, ethylamine, triethylamine, ethylene diamine, triethylene tetramine, 2-methylimidazole, 2-undecylimidazole, and 2-heptadecyl. Midazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole Sol, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl- 4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimeritate, 1-cyanoethyl-2-phenylimidazolium tri Meritate, 2,4-diamino-6-[2'-methylimidazolyl (1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecylimida Zolyl (1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl (1')]-ethyl-s-triazine, 2 ,4-Diamino-6-[2'-methylimidazolyl(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl- 4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrroro[1,2-a]benzimidazole , 1-dodecyl-2-methyl-3-benzyl imidazolium chloride, 2-methylimidazole, 2-phenylimidazole, 2,4-diamino-6-vinyl-s-triazine, 2, 4-Diamino-6-vinyl-s-triazine isocyanuric acid adduct, 2,4-diamino-6-methacryloyloxyethyl-s-triazine, epoxy-imidazole adduct, 2-methyl Benzoimidazole, 2-octylbenzimidazole, 2-pentylbenzimidazole, 2-(1-ethylpentyl) benzoimidazole, 2-nonylbenzimidazole, 2-(4-thiazolyl) benzimidazole, benzoyl Imidazole, 2-(2'-hydroxy-5'-methylphenyl) benzotriazole, 2-(2'-hydroxy-3'-tert-butyl-5'-methylphenyl)-5-chlorobenzotriazole, 2-(2'-hydroxy-3',5'-di-tert-amylphenyl) benzotriazole, 2-(2'-hydroxy-5'-tert-octylphenyl) benzotriazole, 2,2 ＇-Methylene bis[6-(2H-benzotriazol-2-yl)-4-tert-octylphenol], 6-(2-benzotriazolyl)-4-tert-octyl-6´-tert-butyl- 4'-methyl-2,2'-methylene bisphenol, 1,2,3-benzotriazole, 1-[N,N-bis(2-ethylhexyl) aminomethyl]benzotriazole, carboxybenzotriazole, 1 -[N,N-bis(2-ethylhexyl)aminomethyl]methylbenzotriazole, 2,2'-[[(methyl-1H-benzotriazol-1-yl)methyl]imino]bisethanol, 1 -(1´,2'-dicarboxyethyl) benzotriazole, 1-(2,3-dicarboxypropyl) benzotriazole, 1-[(2-ethylhexylamino) methyl]benzotriazole, 2,6 -Bis[(1H-benzotriazol-1-yl)methyl]-4-methylphenol, 5-methylbenzotriazole, 5-phenyltetrazole, etc.
플럭스 조성물 100 중량% 중의 아민류의 함유량은, 예를 들면, 0~15 중량%이어도 되고, 0.1~10 중량%이어도 된다. The content of amines in 100% by weight of the flux composition may be, for example, 0 to 15% by weight or 0.1 to 10% by weight.
할로겐계 활성제로서는, 유기 할로겐 화합물류 또는 아민 할로겐화 수소산염류 등을 들 수 있다.Halogen-based activators include organic halogen compounds or amine hydrohalogen acid salts.
유기 할로겐 화합물류로서는, trans-2,3-디브로모-1,4-부텐디올, 트리아릴 이소시아누레이트 6 브롬화물, 1-브로모-2-부탄올, 1-브로모-2-프로판올, 3-브로모-1-프로판올, 3-브로모-1,2-프로판디올, 1,4-디브로모-2-부탄올, 1,3-디브로모-2-프로판올, 2,3-디브로모-1-프로판올, 2,3-디브로모-1,4-부탄디올, 2,3-디브로모-2-부텐-1,4-디올 등을 들 수 있다.Organic halogen compounds include trans-2,3-dibromo-1,4-butenediol, triaryl isocyanurate 6 bromide, 1-bromo-2-butanol, and 1-bromo-2-propanol. , 3-bromo-1-propanol, 3-bromo-1,2-propanediol, 1,4-dibromo-2-butanol, 1,3-dibromo-2-propanol, 2,3- Dibromo-1-propanol, 2,3-dibromo-1,4-butanediol, 2,3-dibromo-2-butene-1,4-diol, etc. are mentioned.
그 외의 유기 할로겐 화합물로서는, 예를 들면, 유기 클로로 화합물인 클로로알칸, 염소화 지방산 에스테르, 헤트산, 헤트산 무수물 등을 들 수 있다. 추가로 유기 플루오로 화합물인 불소계 계면활성제, 퍼플루오로알킬기를 가지는 계면활성제, 폴리테트라플루오로에틸렌 등을 들 수 있다.Other organic halogen compounds include, for example, chloroalkane, which is an organic chloro compound, chlorinated fatty acid ester, hetic acid, and hetic acid anhydride. Additionally, fluorine-based surfactants that are organic fluoro compounds, surfactants having a perfluoroalkyl group, polytetrafluoroethylene, etc. can be mentioned.
아민 할로겐화 수소산염류로서는, 예를 들면, 요오드화 수소산(HI), 브롬화 수소산(HBr), 염화 수소산(HCl), 플루오르화 수소산(HF) 등의 할로겐화 수소산과, 아닐린, 디페닐구아니딘, 디에틸아민, 이소프로필아민 등의 아민 화합물을 조합시킨 염을 들 수 있다.Examples of amine hydrohalogen salts include hydrohalogen acids such as hydroiodic acid (HI), hydrobromic acid (HBr), hydrochloric acid (HCl), and hydrofluoric acid (HF), aniline, diphenylguanidine, diethylamine, Salts obtained by combining amine compounds such as isopropylamine can be mentioned.
또한, 아민 할로겐화 수소산염류 동등물로서, 테트라플루오로붕산(HBF4)과, 아민 화합물을 조합시킨 염도 이용할 수 있다.Additionally, as an equivalent of amine hydrohalogen acid salts, a salt obtained by combining tetrafluoroboric acid (HBF 4 ) and an amine compound can also be used.
아민 할로겐화 수소산염류의 예로서는, 스테아릴아민 염산염, 디에틸아닐린 염산염, 디에탄올아민 염산염, 2-에틸헥실아민 브롬화 수소산염, 피리딘 브롬화 수소산염, 이소프로필아민 브롬화 수소산염, 시클로헥실아민 브롬화 수소산염, 디에틸아민 브롬화 수소산염, 모노에틸아민 브롬화 수소산염, 1,3-디페닐구아니딘 브롬화 수소산염, 디메틸아민 브롬화 수소산염, 디메틸아민 염산염, 로진아민 브롬화 수소산염, 2-에틸헥실아민 염산염, 이소프로필아민 염산염, 시클로헥실아민 염산염, 2-피페콜린 브롬화 수소산염, 1,3-디페닐구아니딘 염산염, 디메틸벤질아민 염산염, 히드라진 히드라트 브롬화 수소산염, 디메틸시클로헥실아민 염산염, 트리노닐아민 브롬화 수소산염, 디에틸아닐린 브롬화 수소산염, 2-디에틸아미노에탄올 브롬화 수소산염, 2-디에틸아미노에탄올 염산염, 염화 암모늄, 디알릴아민 염산염, 디알릴아민 브롬화 수소산염, 모노에틸아민 염산염, 모노에틸아민 브롬화 수소산염, 디에틸아민 염산염, 트리에틸아민 브롬화 수소산염, 트리에틸아민 염산염, 히드라진 1염산염, 히드라진 2염산염, 히드라진 1브롬화 수소산염, 히드라진 2브롬화 수소산염, 피리딘 염산염, 아닐린 브롬화 수소산염, 부틸아민 염산염, 헥실아민 염산염, n-옥틸아민 염산염, 도데실아민 염산염, 디메틸시클로헥실아민 브롬화 수소산염, 에틸렌디아민 2브롬화 수소산염, 로진아민 브롬화 수소산염, 2-페닐이미다졸 브롬화 수소산염, 4-벤질피리딘 브롬화 수소산염, L-글루타민산 염산염, N-메틸모르폴린 염산염, 베타인 염산염, 2-피페콜린 요오드화 수소산염, 시클로헥실아민 요오드화 수소산염, 1,3-디페닐구아니딘 플루오르화 수소산염, 디에틸아민 플루오르화 수소산염, 2-에틸헥실아민 플루오르화 수소산염, 시클로헥실아민 플루오르화 수소산염, 에틸아민 플루오르화 수소산염, 로진아민 플루오르화 수소산염, 시클로헥실아민 테트라플루오로 붕산염, 및 디시클로헥실아민 테트라플루오로 붕산염 등을 들 수 있다.Examples of amine hydrohalides include stearylamine hydrochloride, diethylaniline hydrochloride, diethanolamine hydrochloride, 2-ethylhexylamine hydrobromide, pyridine hydrobromide, isopropylamine hydrobromide, cyclohexylamine hydrobromide, Diethylamine hydrobromide, monoethylamine hydrobromide, 1,3-diphenylguanidine hydrobromide, dimethylamine hydrobromide, dimethylamine hydrochloride, rosinamine hydrobromide, 2-ethylhexylamine hydrochloride, isopropyl Amine hydrochloride, cyclohexylamine hydrochloride, 2-pipecholine hydrobromide, 1,3-diphenylguanidine hydrochloride, dimethylbenzylamine hydrochloride, hydrazine hydrat hydrobromide, dimethylcyclohexylamine hydrochloride, trinonylamine hydrobromide, Diethylaniline hydrobromide, 2-diethylaminoethanol hydrobromide, 2-diethylaminoethanol hydrochloride, ammonium chloride, diallylamine hydrochloride, diallylamine hydrobromide, monoethylamine hydrochloride, monoethylamine hydrogen bromide Salt, diethylamine hydrochloride, triethylamine hydrobromide, triethylamine hydrochloride, hydrazine monohydrochloride, hydrazine dihydrochloride, hydrazine monohydrobromide, hydrazine dihydrobromide, pyridine hydrochloride, aniline hydrobromide, butylamine hydrochloride. , hexylamine hydrochloride, n-octylamine hydrochloride, dodecylamine hydrochloride, dimethylcyclohexylamine hydrobromide, ethylenediamine dihydrobromide, rosinamine hydrobromide, 2-phenylimidazole hydrobromide, 4-benzyl Pyridine hydrobromide, L-glutamic acid hydrochloride, N-methylmorpholine hydrochloride, betaine hydrochloride, 2-pipecholine hydroiodide, cyclohexylamine hydroiodide, 1,3-diphenylguanidine hydrofluoride, diethyl Amine hydrofluoric acid salt, 2-ethylhexylamine hydrofluoric acid salt, cyclohexylamine hydrofluoric acid salt, ethylamine hydrofluoric acid salt, rosinamine hydrofluoric acid salt, cyclohexylamine tetrafluoroborate, and dicyclohexyl Amine tetrafluoroborate, etc. can be mentioned.
플럭스 조성물 100 중량% 중의 할로겐계 활성제의 함유량은, 예를 들면, 0~10 중량%이어도 되고, 0.1~5 중량%이어도 된다.The content of the halogen-based activator in 100% by weight of the flux composition may be, for example, 0 to 10% by weight or 0.1 to 5% by weight.
플럭스 조성물 100 중량% 중의 유기 할로겐 화합물류의 함유량은, 예를 들면, 0~10 중량%이어도 되고, 0.1~5 중량%이어도 된다. The content of organic halogen compounds in 100% by weight of the flux composition may be, for example, 0 to 10% by weight or 0.1 to 5% by weight.
플럭스 조성물 100 중량% 중의 아민 할로겐화 수소산염류의 함유량은, 예를 들면, 0~5 중량%이어도 되고, 0.1~3 중량%이어도 된다.The content of amine hydrohalogen salts in 100% by weight of the flux composition may be, for example, 0 to 5% by weight or 0.1 to 3% by weight.
인계 활성제로서는, 예를 들면, 포스폰산 에스테르, 페닐 치환 포스핀산 포스폰산류, 인산 에스테르류 등을 들 수 있다.Examples of the phosphorus-based activator include phosphonic acid esters, phenyl-substituted phosphinic acids, phosphonic acids, and phosphoric acid esters.
포스폰산 에스테르로서는, 예를 들면, 2-에틸헥실(2-에틸헥실) 포스포네이트, n-옥틸(n-옥틸) 포스포네이트, n-데실(n-데실) 포스포네이트, 및 n-부틸(n-부틸) 포스포네이트를 들 수 있다.As phosphonic acid esters, for example, 2-ethylhexyl (2-ethylhexyl) phosphonate, n-octyl (n-octyl) phosphonate, n-decyl (n-decyl) phosphonate, and n- butyl (n-butyl) phosphonate.
페닐 치환 포스핀산으로서는, 예를 들면, 페닐 포스핀산, 및 디페닐 포스핀산을 들 수 있다.Examples of phenyl-substituted phosphinic acid include phenyl phosphinic acid and diphenyl phosphinic acid.
플럭스 조성물 100 중량% 중의 인계 활성제의 함유량은, 예를 들면, 0~10 중량%이어도 되고, 0.1~5 중량%이어도 된다.The content of the phosphorus-based activator in 100% by weight of the flux composition may be, for example, 0 to 10% by weight or 0.1 to 5% by weight.
(베이스 수지)(base resin)
플럭스 조성물은, 베이스 수지를 포함해도 된다.The flux composition may contain a base resin.
베이스 수지로서는, 예를 들면, 로진계 수지, (메타)아크릴계 수지, 우레탄계 수지, 폴리에스테르계 수지, 페녹시 수지, 비닐에테르계 수지, 테르펜 수지, 변성 테르펜 수지(예를 들면, 방향족 변성 테르펜 수지, 수첨 테르펜 수지, 수첨 방향족 변성 테르펜 수지 등), 테르펜페놀 수지, 변성 테르펜페놀 수지(예를 들면, 수첨 테르펜페놀 수지 등), 스틸렌 수지, 변성 스틸렌 수지(예를 들면, 스틸렌 아크릴 수지, 스틸렌말레인 수지 등), 크실렌 수지, 변성 크실렌 수지(예를 들면, 페놀 변성 크실렌 수지, 알킬 페놀 변성 크실렌 수지, 페놀 변성 레조르형 크실렌 수지, 폴리올 변성 크실렌 수지, 폴리옥시에틸렌 부가 크실렌 수지 등) 등을 들 수 있다. 이들을 단독으로 이용해도 2종 이상을 조합하여 이용해도 된다.Base resins include, for example, rosin-based resins, (meth)acrylic-based resins, urethane-based resins, polyester-based resins, phenoxy resins, vinyl ether-based resins, terpene resins, and modified terpene resins (e.g., aromatic modified terpene resins) , hydrogenated terpene resin, hydrogenated aromatic modified terpene resin, etc.), terpene phenol resin, modified terpene phenol resin (e.g., hydrogenated terpene phenol resin, etc.), styrene resin, modified styrene resin (e.g., styrene acrylic resin, styrene maleate) phosphorus resin, etc.), xylene resin, modified xylene resin (e.g., phenol-modified xylene resin, alkyl phenol-modified xylene resin, phenol-modified resor type xylene resin, polyol-modified xylene resin, polyoxyethylene addition xylene resin, etc.) You can. These may be used individually or in combination of two or more types.
덧붙여, 본 명세서 중, 「(메타)아크릴계 수지」란, 메타크릴계 수지 및 아크릴계 수지를 포함하는 개념을 말한다.In addition, in this specification, “(meth)acrylic resin” refers to a concept including methacrylic resin and acrylic resin.
이들 중에서도, 베이스 수지는, 로진계 수지를 포함해도 된다.Among these, the base resin may contain a rosin-based resin.
로진계 수지로서는, 예를 들면, 검 로진, 우드 로진, 톨유 로진 등의 원료 로진, 원료 로진으로부터 얻을 수 있는 유도체를 들 수 있다. 유도체로서는, 예를 들면, 정제 로진, 수첨 로진, 불균화 로진, 중합 로진, 및 α,β 불포화 카르복시산 변성물(아크릴화 로진), 말레인화 로진, 푸말화 로진 등, 및 중합 로진의 정제물, 수소화물 및 불균화물, 및 α,β 불포화 카르복시산 변성물의 정제물, 수소화물, 불균화물 등을 들 수 있다. 이들 로진계 수지는, 1종을 단독으로, 또는 2종 이상을 조합하여 이용된다.Examples of the rosin-based resin include raw material rosins such as gum rosin, wood rosin, and tall oil rosin, and derivatives obtained from raw material rosin. Derivatives include, for example, purified rosin, hydrogenated rosin, disproportionated rosin, polymerized rosin, and α,β unsaturated carboxylic acid modified products (acrylated rosin), maleated rosin, fumalized rosin, etc., and purified products of polymerized rosin. Digestions and disproportions, and purified products, hydrides, and disproportions of α,β unsaturated carboxylic acid denatures, and the like can be given. These rosin-based resins are used individually or in combination of two or more types.
플럭스 조성물 100 중량% 중의 베이스 수지의 함유량은, 예를 들면, 0~50 중량%이어도 되고, 10~49 중량%이어도 되고, 15~48 중량%이어도 된다. 베이스 수지의 함유량을 상기 15 중량% 이상으로 하는 것에 의해, 플럭스 잔사의 점탄 특성을 적합한 것으로 할 수 있다.The content of the base resin in 100% by weight of the flux composition may be, for example, 0 to 50% by weight, 10 to 49% by weight, or 15 to 48% by weight. By setting the base resin content to the above 15% by weight or more, the viscoelastic properties of the flux residue can be made suitable.
플럭스 조성물은, 연화점이 135℃ 이상인 제1 로진계 수지를 포함하는 것이 바람직하다. 제1 로진계 수지의 연화점은, 바람직하게는 138℃ 이상, 보다 바람직하게는 140℃ 이상이다.The flux composition preferably contains a first rosin-based resin having a softening point of 135°C or higher. The softening point of the first rosin-based resin is preferably 138°C or higher, and more preferably 140°C or higher.
필요에 따라서, 플럭스 조성물은, 연화점이 120℃ 이상 135℃ 미만인 제2 로진계 수지를 포함해도 된다.If necessary, the flux composition may contain a second rosin-based resin having a softening point of 120°C or more and less than 135°C.
덧붙여, 플럭스 조성물은, 연화점이 90℃ 이하인 제3 로진계 수지를 포함하지 않는 것이 바람직하다.Additionally, the flux composition preferably does not contain a third rosin-based resin having a softening point of 90°C or lower.
제1 로진계 수지를 포함하는 것, 및/또는 제2 로진계 수지를 포함하거나 제3 로진계 수지를 포함하지 않는 구성으로 하는 것에 의해, 플럭스 잔사의 점탄 특성을 적합한 것으로 할 수 있다.By including the first rosin-based resin, and/or including the second rosin-based resin or not including the third rosin-based resin, the viscoelastic properties of the flux residue can be made suitable.
덧붙여, 연화점은, JIS K 2207: 1996의 연화점 시험 방법(환구법)에 준거하여 측정할 수 있다.In addition, the softening point can be measured based on the softening point test method (circle and ball method) of JIS K 2207: 1996.
플럭스 조성물 100 중량% 중의 제1 로진계 수지의 함유량은, 예를 들면, 1~50 중량%이어도 되고, 3~30 중량%이어도 되고, 5~30 중량%이어도 된다. 상기 하한치 이상으로 하는 것에 의해, 플럭스 잔사의 점탄 특성을 적합한 것으로 할 수 있다. 상기 상한치 이하로 하는 것에 의해, 솔더 페이스트의 인쇄 특성을 저하하는 것을 억제할 수 있다.The content of the first rosin-based resin in 100% by weight of the flux composition may be, for example, 1 to 50% by weight, 3 to 30% by weight, or 5 to 30% by weight. By exceeding the above lower limit, the viscoelastic properties of the flux residue can be made suitable. By setting it below the above upper limit, deterioration of the printing characteristics of the solder paste can be suppressed.
전(全) 로진계 수지 100 중량% 중의 제1 로진계 수지의 함유량은, 예를 들면, 3~100 중량%이어도 되고, 10~90 중량%이어도 되고, 12~80 중량%이어도 된다. 상기 하한치 이상으로 하는 것에 의해, 플럭스 잔사의 점탄 특성을 적합한 것으로 할 수 있다.The content of the first rosin-based resin in 100% by weight of all rosin-based resins may be, for example, 3 to 100% by weight, 10 to 90% by weight, or 12 to 80% by weight. By exceeding the above lower limit, the viscoelastic properties of the flux residue can be made suitable.
(용제)(solvent)
플럭스 조성물은, 용제를 포함해도 된다.The flux composition may contain a solvent.
용제는, 25℃ 환경 하, 고형 또는 액상의 용제를 이용할 수 있다. 이들을 단독으로 이용해도 2종 이상을 조합하여 이용해도 된다.The solvent can be a solid or liquid solvent in a 25°C environment. These may be used individually or in combination of two or more types.
고형 용제로서는, 예를 들면, 알코올계 고형 용제나 페놀계 고형 용제 등이 이용된다.As the solid solvent, for example, an alcohol-based solid solvent, a phenol-based solid solvent, etc. are used.
이들을 단독으로 이용해도 2종 이상을 조합하여 이용해도 된다.These may be used individually or in combination of two or more types.
알코올계 고형 용제는, 분자 내에 1개 또는 2개 이상의 히드록시기를 가지는 고형 용제이면 되고, 2개 또는 3개 이상의 복수의 히드록시기를 가지는 다가 알코올계 고형 용제가 바람직하다.The alcohol-based solid solvent may be any solid solvent having one or two or more hydroxy groups in the molecule, and a polyhydric alcohol-based solid solvent having two or three or more hydroxy groups is preferable.
다가 알코올계 고형 용제의 구체예로서는, 예를 들면, 펜타에리트리톨, 트리메틸올프로판, 2,5-디메틸-2,5-헥산디올, 네오펜틸글리콜 등을 들 수 있다. Specific examples of polyhydric alcohol-based solid solvents include pentaerythritol, trimethylolpropane, 2,5-dimethyl-2,5-hexanediol, and neopentyl glycol.
페놀계 고형 용제는, 분자 내에 1개 또는 2개 이상의 페놀기를 가지는 고형 용제이면 되고, 페놀기의 벤젠환에는, 1 또는 2개 이상의 히드록시기가 결합해도 된다.The phenol-based solid solvent may be a solid solvent having one or two or more phenol groups in the molecule, and one or two or more hydroxy groups may be bonded to the benzene ring of the phenol group.
액상 용제는, 예를 들면, 알코올계 용제, 글리콜 에테르계 용제, 테르피네올류, 탄화수소류, 에스테르류, 물 등 등이 이용된다. 이들을 단독으로 이용해도 2종 이상을 조합하여 이용해도 된다. 이 중에서도, 액상 용제로서, 알코올계 용제 및 글리콜 에테르계 용제의 적어도 한쪽을 이용해도 된다.Liquid solvents include, for example, alcohol-based solvents, glycol ether-based solvents, terpineols, hydrocarbons, esters, water, etc. These may be used individually or in combination of two or more types. Among these, as the liquid solvent, at least one of an alcohol-based solvent and a glycol ether-based solvent may be used.
알코올계 용제로서는, 예를 들면, 이소프로필 알코올, 1,2-부탄디올, 이소보닐시클로헥산올, 2,4-디에틸-1,5-펜탄디올, 2,2-디메틸-1,3-프로판디올, 2,5-디메틸-2,5-헥산디올, 2,5-디메틸-3-헥신-2,5-디올, 2,3-디메틸-2,3-부탄디올, 1,1,1-트리스(히드록시메틸) 에탄, 2-에틸-2-히드록시메틸-1,3-프로판디올, 2,2'-옥시 비스(메틸렌) 비스(2-에틸-1,3-프로판디올), 2,2-비스(히드록시메틸)-1,3-프로판디올, 1,2,6-트리히드록시헥산, 비스[2,2,2-트리스(히드록시메틸) 에틸]에테르, 1-에틴일-1-시클로헥산올, 1,4-시클로헥산디올, 1,4-시클로헥산 디메탄올, 에리트리톨, 트레이톨, 구아이아콜 글리세롤 에테르, 3,6-디메틸-4-옥틴-3,6-디올, 2,4,7,9-테트라메틸-5-데신-4,7-디올 등을 들 수 있다.Examples of alcohol-based solvents include isopropyl alcohol, 1,2-butanediol, isobornylcyclohexanol, 2,4-diethyl-1,5-pentanediol, and 2,2-dimethyl-1,3-propane. Diol, 2,5-dimethyl-2,5-hexanediol, 2,5-dimethyl-3-hexyne-2,5-diol, 2,3-dimethyl-2,3-butanediol, 1,1,1-tris (Hydroxymethyl) ethane, 2-ethyl-2-hydroxymethyl-1,3-propanediol, 2,2'-oxy bis (methylene) bis (2-ethyl-1,3-propanediol), 2, 2-bis(hydroxymethyl)-1,3-propanediol, 1,2,6-trihydroxyhexane, bis[2,2,2-tris(hydroxymethyl) ethyl]ether, 1-ethynyl- 1-cyclohexanol, 1,4-cyclohexanediol, 1,4-cyclohexane dimethanol, erythritol, threitol, guaiacol glycerol ether, 3,6-dimethyl-4-octyne-3,6-diol , 2,4,7,9-tetramethyl-5-decyne-4,7-diol, etc.
글리콜 에테르계 용제로서는, 예를 들면, 헥실 디글리콜, 디에틸렌글리콜 모노-2-에틸헥실 에테르, 에틸렌글리콜 모노페닐 에테르, 2-메틸펜탄-2,4-디올, 디에틸렌글리콜 모노헥실 에테르, 디에틸렌글리콜 디부틸 에테르, 트리에틸렌글리콜 모노부틸 에테르, 테트라에틸렌글리콜 모노메틸 에테르 등을 들 수 있다. Examples of glycol ether solvents include hexyl diglycol, diethylene glycol mono-2-ethylhexyl ether, ethylene glycol monophenyl ether, 2-methylpentane-2,4-diol, diethylene glycol monohexyl ether, and diol. Examples include ethylene glycol dibutyl ether, triethylene glycol monobutyl ether, and tetraethylene glycol monomethyl ether.
플럭스 조성물 100 중량% 중의 용제의 함유량은, 예를 들면, 0~65 중량%이어도 되고, 1~50 중량%이어도 되고, 5~40 중량%이어도 된다. 상기 상한치 이하로 하는 것에 의해, 플럭스 잔사의 점탄 특성을 적합한 것으로 할 수 있다.The solvent content in 100% by weight of the flux composition may be, for example, 0 to 65% by weight, 1 to 50% by weight, or 5 to 40% by weight. By setting it below the above upper limit, the viscoelastic properties of the flux residue can be made suitable.
플럭스 조성물 100 중량% 중의 액상 용제의 함유량은, 예를 들면, 0~65 중량%이어도 되고, 1~50 중량%이어도 되고, 5~40 중량%이어도 된다. The content of the liquid solvent in 100% by weight of the flux composition may be, for example, 0 to 65% by weight, 1 to 50% by weight, or 5 to 40% by weight.
(칙소제)(Thixotropic agent)
플럭스 조성물은, 칙소제를 포함해도 된다.The flux composition may contain a thixotropic agent.
칙소제로서는, 예를 들면, 왁스계 칙소제, 아마이드계 칙소제, 소르비톨계 칙소제 등을 들 수 있다.Examples of thixotropic agents include wax-based thixotropic agents, amide-based thixotropic agents, and sorbitol-based thixotropic agents.
왁스계 칙소제로서는, 예를 들면, 히마시 경화유 등을 들 수 있다. Examples of the wax-based thixotropic agent include Himashi hydrogenated oil.
아마이드계 칙소제로서는, 모노아미드, 비스아미드, 폴리아미드를 들 수 있다. 예를 들면, 라우린산 아마이드, 팔미틴산 아마이드, 스테아린산 아마이드, 베헨산 아마이드, 히드록시스테아린산 아마이드, 포화 지방산 아마이드, 올레인산 아마이드, 에루크산 아마이드, 불포화 지방산 아마이드, p-톨루엔 메탄아마이드, 방향족 아마이드, 메틸렌 비스스테아린산 아마이드, 에틸렌 비스라우린산 아마이드, 에틸렌 비스히드록시스테아린산 아마이드, 포화 지방산 비스아마이드, 메틸렌 비스올레인산 아마이드, 불포화 지방산 비스아마이드, m-크실렌 비스스테아린산 아마이드, 방향족 비스아마이드, 지방족 폴리아마이드(포화 지방산 폴리아마이드, 불포화 지방산 폴리아마이드), 방향족 폴리아마이드, 치환 아마이드, 메틸올 스테아린산 아마이드, 메틸올 아마이드, 지방산 에스테르 아마이드, 환상 아미드 올리고머, 비환상 아미드 올리고머 등을 들 수 있다.Examples of amide-based thixotropic agents include monoamide, bisamide, and polyamide. For example, lauric acid amide, palmitic acid amide, stearic acid amide, behenic acid amide, hydroxystearic acid amide, saturated fatty acid amide, oleic acid amide, erucic acid amide, unsaturated fatty acid amide, p-toluene methanamide, aromatic amide, methylene. Bisstearic acid amide, ethylene bislauric acid amide, ethylene bishydroxystearic acid amide, saturated fatty acid bisamide, methylene bisoleic acid amide, unsaturated fatty acid bisamide, m-xylene bisstearic acid amide, aromatic bisamide, aliphatic polyamide (saturated fatty acid polyamide, unsaturated fatty acid polyamide), aromatic polyamide, substituted amide, methylol stearic acid amide, methylol amide, fatty acid ester amide, cyclic amide oligomer, non-cyclic amide oligomer, etc.
플럭스 조성물 100 중량% 중의 칙소제의 함유량은, 예를 들면, 0~20 중량%이어도 되고, 1~15 중량%이어도 된다.The content of the thixotropic agent in 100% by weight of the flux composition may be, for example, 0 to 20% by weight or 1 to 15% by weight.
(첨가제)(additive)
플럭스 조성물은, 본 발명의 효과를 해치지 않는 한, 플럭스에 통상 첨가되는 첨가제를 포함해도 된다.The flux composition may contain additives normally added to flux, as long as they do not impair the effect of the present invention.
첨가제로서는, 예를 들면, 산화 방지제, 방수제, 소포제, 광택 소거제, 계면활성제, 착색제 등을 들 수 있다. 이들을 단독으로 이용해도 2종 이상을 조합하여 이용해도 된다.Examples of additives include antioxidants, water-proofing agents, anti-foaming agents, matting agents, surfactants, and colorants. These may be used individually or in combination of two or more types.
예를 들면, 산화 방지제로서는, 힌더드페놀계 산화 방지제, 인계 산화 방지제 등을 들 수 있다.For example, antioxidants include hindered phenol-based antioxidants and phosphorus-based antioxidants.
땜납 분말은, Sn 단체(單體), 또는, Sn-Ag계, Sn-Cu계, Sn-Ag-Cu계, Sn-Bi계, Sn-In계 등, 혹은, 이들의 합금으로 Pb, Sb, Bi, In, Cu, Zn, As, Ag, Cd, Fe, Ni, Co, Au, Ge, P 등을 첨가한 땜납 분체로 구성되어도 된다.The solder powder is Sn alone, Sn-Ag-based, Sn-Cu-based, Sn-Ag-Cu-based, Sn-Bi-based, Sn-In-based, etc., or alloys thereof such as Pb and Sb. , Bi, In, Cu, Zn, As, Ag, Cd, Fe, Ni, Co, Au, Ge, P, etc. may be added.
땜납 분말은, JIS Z 3284: 2014에 준거하여 입도 분포 측정 시험으로 측정되는 소정의 입도 분포를 가져도 된다.The solder powder may have a predetermined particle size distribution measured by a particle size distribution measurement test based on JIS Z 3284:2014.
땜납 분말은, 예를 들면, 입자 지름이 2~150μm의 범위에 있는 분말의 질량 분율이 80% 이상, 바람직하게는 입자 지름이 5~75μm의 범위에 있는 분말의 질량 분율이 80% 이상, 보다 바람직하게는 입자 지름이 5~45μm의 범위에 있는 분말의 질량 분율이 80% 이상이 되도록 구성되어도 된다.The solder powder, for example, has a mass fraction of powder with a particle diameter in the range of 2 to 150 μm of 80% or more, and preferably has a mass fraction of powder with a particle diameter in the range of 5 to 75 μm of 80% or more. Preferably, the mass fraction of powder having a particle diameter in the range of 5 to 45 μm may be 80% or more.
JIS Z 3284: 2017에 준거하여 입도 분포 측정 시험에 의해, 땜납 분말은, 입도 분포에 따라서, 타입 1~타입 8로 분류할 수 있다.According to a particle size distribution measurement test based on JIS Z 3284: 2017, solder powder can be classified into Type 1 to Type 8 depending on the particle size distribution.
본 실시 형태에서는, 이 중에서도, 타입 2~타입 7의 땜납 분말이 바람직하고, 타입 3~타입 6의 땜납 분말이 보다 바람직하다.In this embodiment, among these, type 2 to type 7 solder powder is preferable, and type 3 to type 6 solder powder is more preferable.
타입 3에서는, 입자 지름이 25~45μm의 범위에 있는 분말의 질량 분율이 80% 이상을 만족시킨다. In type 3, the mass fraction of powder with a particle diameter in the range of 25 to 45 μm satisfies 80% or more.
타입 4에서는, 입자 지름이 20~38μm의 범위에 있는 분말의 질량 분율이 80% 이상을 만족시킨다. In type 4, the mass fraction of powder with a particle diameter in the range of 20 to 38 μm satisfies 80% or more.
타입 5에서는, 입자 지름이 15~25μm의 범위에 있는 분말의 질량 분율이 80% 이상을 만족시킨다. In Type 5, the mass fraction of powder with a particle diameter in the range of 15 to 25 μm satisfies 80% or more.
타입 6에서는, 입자 지름이 5~15μm의 범위에 있는 분말의 질량 분율이 80% 이상을 만족시킨다. In type 6, the mass fraction of powder with a particle diameter in the range of 5 to 15 μm satisfies 80% or more.
땜납 분말 및 플럭스 조성물을 포함하는 솔더 페이스트 100 중량% 중의 플럭스 조성물의 함유량은, 예를 들면, 7~30 중량%, 바람직하게는 8~25 중량%, 보다 바람직하게는 10~20 중량%이다.The content of the flux composition in 100% by weight of the solder paste containing the solder powder and the flux composition is, for example, 7 to 30% by weight, preferably 8 to 25% by weight, and more preferably 10 to 20% by weight.
플럭스 조성물 및 솔더 페이스트의 제조 방법에 한정은 없고, 원료를 동시에 또는 차례로, 임의의 방법으로 혼합하는 것에 의해 제조할 수 있다.There is no limitation to the manufacturing method of the flux composition and solder paste, and they can be manufactured by mixing the raw materials simultaneously or sequentially by any method.
플럭스 조성물의 제조는, 최종적으로 플럭스 조성물의 전성분이 혼합되면 되고, 용제에 다른 성분을 차례로 혼합해도 되고, 다른 성분을 혼합한 것을 용제에 첨가해도 되고, 용제와 다른 전성분을 동시에 혼합해도 된다. To prepare a flux composition, all components of the flux composition may be mixed. Other components may be mixed sequentially with the solvent, a mixture of other components may be added to the solvent, or the solvent and all other components may be mixed simultaneously.
또한, 솔더 페이스트의 제조는, 반드시, 플럭스 조성물을 미리 조제하고, 이것을 땜납 분말과 혼합할 필요는 없고, 최종적으로 플럭스 조성물의 전성분, 땜납 분말 및 필요에 따라서 솔더 페이스트에 첨가되는 첨가제가 혼합된다면 혼합의 차례는 묻지 않고, 플럭스 조성물의 성분의 일부와 납땜 분말을 혼합한 후, 플럭스 조성물의 나머지의 성분을 첨가하는 등 해도 된다.In addition, the production of solder paste does not necessarily require preparing a flux composition in advance and mixing it with solder powder, as long as all components of the flux composition, solder powder, and additives added to the solder paste as necessary are ultimately mixed. Regardless of the order of mixing, you may mix some of the components of the flux composition with the soldering powder and then add the remaining components of the flux composition.
본 실시 형태의 솔더 페이스트는, 일례로서, 반도체 장치 등의 전자 장치의 제조 방법에 이용할 수 있다.As an example, the solder paste of this embodiment can be used in a manufacturing method of electronic devices such as semiconductor devices.
전자 장치의 제조 방법은, 상기의 솔더 페이스트를 전극에 도포하는 공정과, 예를 들면, 리드 프레임이나 프린트 배선 기판 등의 기판과 반도체 소자를 가열 처리하고, 용융한 땜납을 통해서 이들을 접합하는 공정을 포함해도 된다.The manufacturing method of an electronic device includes a process of applying the above-described solder paste to an electrode, heat treatment of a substrate such as a lead frame or printed wiring board, and a semiconductor element, and a process of joining them through molten solder. You may include it.
전자 장치의 제조 방법의 일례는, 상기의 솔더 페이스트를, 전자 회로 기판의 납땜 부위에 인쇄하는 공정과, 납땜 부위에 전자 부품을 실장하는 공정과, 납땜 부위의 주위에 밀폐 구조가 존재하는 상태로, 솔더 페이스트 중의 땜납 분말이 용융하는 온도까지 납땜 부위를 가열하여 전자 부품 및 전자 회로 기판을 접합하는 공정과를 포함해도 된다. An example of a method for manufacturing an electronic device includes a process of printing the above-described solder paste on a soldering area of an electronic circuit board, a process of mounting electronic components on the soldering area, and a sealing structure existing around the soldering area. , it may include a process of joining electronic components and electronic circuit boards by heating the soldering area to a temperature at which the solder powder in the solder paste melts.
전자 부품은, 파워 반도체 등의 고출력 디바이스가 이용되어도 된다. As electronic components, high-output devices such as power semiconductors may be used.
솔더 페이스트의 인쇄 방법으로서, 스크린 인쇄, 필름 인쇄 등을 들 수 있고, 제트 디스펜스 이외 방법을 이용하여 인쇄해도 된다.Examples of the solder paste printing method include screen printing, film printing, etc., and methods other than jet dispensing may be used for printing.
이상, 본 발명의 실시 형태에 대하여 말했지만, 이들은 본 발명의 예시이며, 상기 이외의 여러가지 구성을 채용할 수 있다. 또한, 본 발명은 상술의 실시 형태로 한정되는 것이 아니고, 본 발명의 목적을 달성할 수 있는 범위에서의 변형, 개량 등은 본 발명에 포함된다.Although the embodiments of the present invention have been described above, these are examples of the present invention, and various configurations other than the above can be adopted. In addition, the present invention is not limited to the above-described embodiments, and modifications, improvements, etc. within the range that can achieve the purpose of the present invention are included in the present invention.
이하, 참고 형태의 예를 부기한다.Below, examples of reference forms are added.
1. 플럭스 조성물과, 땜납 분말을 포함하는, 솔더 페이스트로서, 1. A solder paste comprising a flux composition and solder powder,
하기의 제작 절차에 따라서 당해 솔더 페이스트로부터 얻어진 플럭스 잔사에 대해서, 하기의 측정 조건에 근거하여 레오미터를 이용하여 측정한, 100℃에서의 저장 탄성률을 G'100, 손실 탄성률을 G''100으로 했을 때,For the flux residue obtained from the solder paste according to the production procedure below, the storage modulus at 100°C was measured as G'100 and the loss modulus as G''100 , measured using a rheometer based on the measurement conditions below. When I did it,
G'100 및 G''100이, G'100>G''100을 만족시키도록 구성되는, G' 100 and G'' 100 are configured to satisfy G' 100 >G'' 100 ,
솔더 페이스트.solder paste.
<플럭스 잔사의 제작 절차><Production procedure for flux residue>
1. 저면이 45 mmХ45 mm, 높이가 5 mm, 두께: 0.3 mm의 구리제 트레이를 2개 준비한다.1. Prepare two copper trays with a bottom of 45 mm x 45 mm, a height of 5 mm, and a thickness of 0.3 mm.
2. 한쪽의 상기 구리제 트레이의 저면 상에, 다른 쪽의 상기 구리제 트레이의 개구가 한쪽의 개구에 대향하도록 겹치고, 테이프로 고정하여, 높이가 약 10 mm의 구리제 박스를 준비한다. 2. A copper box with a height of about 10 mm is prepared by overlapping the bottom of the copper tray on one side so that the opening of the copper tray on the other side is opposite to the opening on the other side and fixing it with tape.
3. 당해 솔더 페이스트를, 5 g 채취하여, 샘플로 한다. 이 샘플을, 한쪽의 상기 구리제 트레이의 내측의 저면 상에, 상기 저면의 80%의 면적을 피복하도록 바른다. 3. 5 g of the solder paste is collected and used as a sample. This sample is applied on one inner bottom surface of the copper tray so as to cover 80% of the area of the bottom surface.
4. 상기 샘플 투입의 상기 구리제 박스에 대해서, 리플로우 로를 이용하여, 대기 하에서, 하기의 온도 프로파일 A~E의 리플로우 처치를 한다. 4. The copper box into which the sample is placed is subjected to reflow treatment using a reflow furnace under the atmosphere with the following temperature profiles A to E.
(온도 프로파일 A~E)(Temperature profile A~E)
A. 실온 25℃에서 150℃까지, 1.9℃/sec의 승온 속도로 가열한다. A. Heat from room temperature 25℃ to 150℃ at a temperature increase rate of 1.9℃/sec.
B. 150℃~180℃ 온도역에서, 80 sec 유지한다. B. In the temperature range of 150℃~180℃, maintain for 80 sec.
C. 220℃까지, 1.2℃/sec의 승온 속도로 가열한다. C. Heat to 220°C at a temperature increase rate of 1.2°C/sec.
D. 220℃ 이상을 40 sec 유지하고, 피크 온도는 240℃로 가열한다. D. Maintain above 220℃ for 40 sec and heat to peak temperature of 240℃.
E. 그 후, 실온 25℃까지 냉각한다. E. Afterwards, cool to room temperature of 25°C.
5. 리플로우 처리 후, 한쪽의 상기 구리제 트레이의 내측의 저면 상에 잔존하는 플럭스 잔사를 채취한다. 5. After the reflow treatment, the flux residue remaining on the inner bottom surface of one of the copper trays is sampled.
<측정 조건><Measurement conditions>
측정 장치: 레오미터 Measuring device: rheometer
측정 온도: 20℃~180℃Measurement temperature: 20℃~180℃
지오메트리(상측): 25mmφ, 스텐레스제, 패러랠 플레이트 Geometry (upper side): 25mmϕ, stainless steel, parallel plate
플레이트(하측): 60mmφPlate (lower side): 60mmϕ
모드: 5℃/minMode: 5℃/min
변형: 1%Variation: 1%
주파수: 10HzFrequency: 10Hz
갭: 0.2mmGap: 0.2mm
2. 1.에 기재된 솔더 페이스트로서, 2. The solder paste described in 1.,
상기의 측정 조건에 근거하여 레오미터를 이용하여 측정한, 140℃에서의 저장 탄성률 및 손실 탄성률로부터 구해지는, 140℃의 위상각을δ140으로 했을 때, δ140이 1° 이상 45° 미만인, 솔더 페이스트.When the phase angle at 140°C, which is determined from the storage modulus and loss modulus at 140°C, measured using a rheometer based on the above measurement conditions, is δ 140 , δ 140 is 1° or more and less than 45°, solder paste.
3. 2.에 기재된 솔더 페이스트로서, 3. The solder paste described in 2.,
상기의 측정 조건에 근거하여 레오미터를 이용하여 측정한, 100℃에서의 저장 탄성률 및 손실 탄성률로부터 구해지는, 100℃의 위상각을 δ100으로 했을 때, δ140 및 δ100이, 0.1≤δ140/δ100≤3.0을 만족시키도록 구성되는, 솔더 페이스트.When the phase angle at 100°C, which is determined from the storage modulus and loss modulus at 100°C measured using a rheometer based on the above measurement conditions, is δ 100 , δ 140 and δ 100 are 0.1≤δ A solder paste configured to satisfy 140 /δ 100 ≤3.0.
4. 1.~3.의 어느쪽이든 하나에 기재된 솔더 페이스트로서, 4. The solder paste described in any one of 1. to 3.,
상기 플럭스 조성물이, 연화점이 135℃ 이상인 로진계 수지를 포함하는, 솔더 페이스트.A solder paste in which the flux composition contains a rosin-based resin having a softening point of 135°C or higher.
5. 1.~4.의 어느 하나에 기재된 솔더 페이스트로서, 5. The solder paste described in any one of 1. to 4.,
상기 플럭스 조성물의 함유량이, 당해 솔더 페이스트의 100 중량% 중, 7 중량% 이상 20 중량% 이하인, 솔더 페이스트. A solder paste in which the content of the flux composition is 7% by weight or more and 20% by weight or less based on 100% by weight of the solder paste.
6. 1.~5.의 어느 하나에 기재된 솔더 페이스트로서, 6. The solder paste described in any one of 1. to 5.,
상기의 레오미터를 이용하여, 전단 속도: 6sec-1, 25℃의 조건으로 측정했을 때의 점도(η1)가, 5 Pa·s 이상 400 Pa·s 이하인, 솔더 페이스트. A solder paste having a viscosity (η 1 ) of 5 Pa·s or more and 400 Pa·s or less when measured using the rheometer above under conditions of a shear rate of 6 sec -1 and 25°C.
7. 1.~6.의 어느 하나에 기재된 솔더 페이스트로서, 7. The solder paste described in any one of 1. to 6.,
상기의 레오미터를 이용하여, 25℃에서의 당해 솔더 페이스트의 점도를 측정하고, 전단 속도가 1.8sec-1 때의 점도를 η2, 전단 속도가 18 sec-1 때의 점도를 η3으로 했을 때, Log(η2/η3)로 구해지는 칙소비가, 0.3 이상 1.8 이하인, 솔더 페이스트.Using the above rheometer, the viscosity of the solder paste at 25°C was measured, and the viscosity at a shear rate of 1.8 sec -1 was η2 and the viscosity at a shear rate of 18 sec -1 was η3, A solder paste having a thixotropic ratio determined by Log(η2/η3) of 0.3 or more and 1.8 or less.
8. 1.~7.의 어느 하나에 기재된 솔더 페이스트로서, 8. The solder paste described in any one of 1. to 7.,
전자 회로 기판과 전자 부품으로 구성되는 밀폐 구조의 주위로, 이들을 접합하기 위해서 이용하는, 솔더 페이스트. Solder paste used to join electronic circuit boards and electronic components around a sealed structure.
9. 1.~8.의 어느 하나에 기재된 솔더 페이스트로서, 9. The solder paste described in any one of 1. to 8.,
상기 플럭스 조성물이, 활성제, 베이스 수지, 칙소제, 및 용제로 이루어지는 군으로부터 선택되는 1 또는 2 이상을 포함하는, 솔더 페이스트. A solder paste wherein the flux composition contains one or two or more selected from the group consisting of an activator, a base resin, a thixotropic agent, and a solvent.
10. 9.에 기재된 솔더 페이스트로서, 10. The solder paste described in 9.,
상기 활성제가, 유기산, 아민류, 할로겐계 활성제, 및 인계 활성제로 이루어지는 군으로부터 선택되는 1 또는 2 이상을 포함하는, 솔더 페이스트. A solder paste wherein the activator contains one or two or more selected from the group consisting of organic acids, amines, halogen-based activators, and phosphorus-based activators.
11. 1.~10.의 어느 하나에 기재된 솔더 페이스트로서, 11. The solder paste described in any one of 1. to 10.,
상기 땜납 분말은, 입자 지름이 2~150μm의 범위에 있는 분말의 질량 분율이 80% 이상인, 솔더 페이스트. The solder powder is a solder paste in which the mass fraction of powder having a particle diameter in the range of 2 to 150 μm is 80% or more.
12. 1.~11.의 어느 하나에 기재된 솔더 페이스트를, 전자 회로 기판의 납땜 부위에 인쇄하는 공정과, 12. A process of printing the solder paste described in any one of 1. to 11. on a soldering portion of an electronic circuit board;
상기 납땜 부위에 전자 부품을 실장하는 공정과, A process of mounting electronic components on the soldering area,
상기 납땜 부위의 주위에 밀폐 구조가 존재하는 상태로, 상기 솔더 페이스트 중의 땜납 분말이 용융하는 온도까지 상기 납땜 부위를 가열하여 상기 전자 부품 및 상기 전자 회로 기판을 접합하는 공정A process of joining the electronic component and the electronic circuit board by heating the solder portion to a temperature at which the solder powder in the solder paste melts, with a sealed structure existing around the solder portion.
을 포함하는, 전자 장치의 제조 방법.Including, a method of manufacturing an electronic device.
[실시예][Example]
이하, 본 발명에 대하여 실시예를 참조하여 상세하게 설명하지만, 본 발명은, 이들 실시예의 기재로 전혀 한정되지 않는다.Hereinafter, the present invention will be described in detail with reference to examples, but the present invention is not limited in any way to the description of these examples.
이하, 표 1 중의 원료 성분의 정보를 나타낸다.Below, information on the raw material components in Table 1 is shown.
(베이스 수지)(base resin)
·로진계 수지 1: 아크릴산 변성 수첨 로진(연화점: 131℃, 아라카와 카가쿠 코교사 제, KE-604)Rosin-based resin 1: Acrylic acid-modified hydrogenated rosin (softening point: 131°C, manufactured by Arakawa Chemical Co., Ltd., KE-604)
·로진계 수지 2: 수첨 로진(연화점: 74℃, EASTMAN CHEMICAL사 제, FORAL AX-E)Rosin-based resin 2: Hydrogenated rosin (softening point: 74°C, manufactured by EASTMAN CHEMICAL, FORAL AX-E)
·로진계 수지 3: 중합 로진(연화점: 141℃, 아라카와 카가쿠 코교사 제, KR-140) Rosin-based resin 3: polymerized rosin (softening point: 141°C, manufactured by Arakawa Chemical Co., Ltd., KR-140)
덧붙여, 로진계 수지의 연화점은, JIS K 2207: 1996의 연화점 시험 방법(환구법)에 준거하여 측정하고, 2회의 측정치의 평균치(소수점 제1위(位)의 값을 반올림로 했다.In addition, the softening point of the rosin-based resin was measured based on the softening point test method (circle and ball method) of JIS K 2207: 1996, and the average value of two measurements (the value to the nearest decimal point was rounded off).
·아크릴계 수지 1: 아크릴 수지Acrylic resin 1: Acrylic resin
(활성제)(activator)
·유기산 1: 다이머산·Organic acid 1: dimer acid
·유기산 2: 아디핀산Organic acid 2: Adipic acid
·유기산 3: 아제라인산·Organic acid 3: Azeraic acid
·아민류 1: 2-페닐-4-메틸 이미다졸(약칭: 2P4MZ)·Amines 1: 2-phenyl-4-methyl imidazole (abbreviated name: 2P4MZ)
·아민 할로겐화 수소산염류 1: 디페닐구아니딘 브롬화 수소산염·Amine hydrohalogen acid salts 1: Diphenylguanidine hydrobromide salt
·유기 할로겐 화합물 1: 2,3-디브로모-2-부텐-1,4-디올· Organic halogen compound 1: 2,3-dibromo-2-butene-1,4-diol
(용제)(solvent)
·용제 1: 글리콜 에테르계 용제(디에틸렌글리콜 모노헥실 에테르)Solvent 1: Glycol ether-based solvent (diethylene glycol monohexyl ether)
(칙소제)(Thixotropic agent)
·칙소제 1: 폴리아미드·Thixotropic agent 1: polyamide
(첨가제)(additive)
·산화 방지제 1: 힌더드페놀계 산화 방지제Antioxidant 1: Hindered phenol-based antioxidant
(땜납 분말)(Solder powder)
·땜납 분말 1: 땜납 분말(SEC305: Sn-3.0Ag-0.5Cu, 타입 4, 센주 킨조쿠 코교사 제)Solder powder 1: Solder powder (SEC305: Sn-3.0Ag-0.5Cu, Type 4, Senju Kinzoku Kogyo Co., Ltd.)
<솔더 페이스트의 조제><Preparation of solder paste>
하기 표 1에 나타내는 배합 비율로, 원료 성분을 혼합하는 것에 의해, 플럭스 조성물을 얻었다.A flux composition was obtained by mixing the raw material components in the mixing ratio shown in Table 1 below.
그 후, 얻어진 플럭스 조성물 11.5 중량% 및 땜납 분말 88.5 중량%를 혼합하여, 솔더 페이스트 얻었다.After that, 11.5% by weight of the obtained flux composition and 88.5% by weight of solder powder were mixed to obtain a solder paste.
얻어진 솔더 페이스트에 대해서, 이하의 평가 항목에 대하여 평가를 수행했다.The obtained solder paste was evaluated for the following evaluation items.
<저장 탄성률, 손실 탄성률의 측정><Measurement of storage modulus and loss modulus>
하기의 제작 절차에 따라서 솔더 페이스트로부터 플럭스 잔사를 채취했다.Flux residue was collected from the solder paste according to the manufacturing procedure below.
(플럭스 잔사의 제작 절차)(Production procedure for flux residue)
1. 도 1에 나타내는 바와 같게, 저면이 45 mmХ45 mm, 높이가 5 mm, 두께: 0.3 mm의 구리제 트레이(12, 14)를 2개 준비했다.1. As shown in Fig. 1, two copper trays 12 and 14 with a bottom of 45 mm x 45 mm, a height of 5 mm, and a thickness of 0.3 mm were prepared.
2. 한쪽의 구리제 트레이(12)의 저면 상에, 다른 쪽의 구리제 트레이(14)의 개구가 한쪽의 개구에 대향하도록 겹치고, 테이프로 고정하여, 높이가 10 mm의 구리제 박스(10)를 준비했다.2. On the bottom of the copper tray 12 on one side, the opening of the copper tray 14 on the other side is overlapped so as to face the opening on the other side, and fixed with tape to form a copper box 10 with a height of 10 mm. ) was prepared.
3. 얻어진 솔더 페이스트를, 5 g 채취하여, 샘플로 한다. 이 샘플을, 한쪽의 구리제 트레이(12)의 내측의 저면 상에, 저면의 80%의 면적을 피복하도록 발랐다.3. 5 g of the obtained solder paste is collected and used as a sample. This sample was applied to the inner bottom of one copper tray 12 to cover 80% of the bottom.
4. 샘플 투입의 구리제 박스(10)에 대해서, 리플로우 로(센주 킨조쿠 코교사 제, SNR-825)를 이용하여, 대기 하에서, 하기의 온도 프로파일 A~E의 리플로우 처치를 실시했다.4. The copper box 10 for inserting the sample was subjected to reflow treatment with the following temperature profiles A to E under air using a reflow furnace (SNR-825, manufactured by Senju Kinzoku Kogyo Corporation). .
(온도 프로파일 A~E)(Temperature profile A~E)
A. 실온 25℃에서 150℃까지, 1.9℃/sec의 승온 속도로 가열한다. A. Heat from room temperature 25℃ to 150℃ at a temperature increase rate of 1.9℃/sec.
B. 150℃~180℃ 온도역에서, 80 sec 유지한다. B. In the temperature range of 150℃~180℃, maintain for 80 sec.
C. 220℃까지, 1.2℃/sec의 승온 속도로 가열한다. C. Heat to 220°C at a temperature increase rate of 1.2°C/sec.
D. 220℃ 이상을 40 sec 유지하고, 피크 온도는 240℃로 가열한다. D. Maintain above 220℃ for 40 sec and heat to peak temperature of 240℃.
E. 그 후, 실온 25℃까지 냉각한다. E. Afterwards, cool to room temperature of 25°C.
5. 리플로우 처리 후, 한쪽의 구리제 트레이(12)의 내측의 저면 상에 잔존하는 플럭스 잔사를 채취했다. 5. After the reflow treatment, the flux residue remaining on the inner bottom surface of one copper tray 12 was sampled.
얻어진 플럭스 잔사에 대해서, 하기의 측정 조건에 근거하여 레오미터를 이용하여, 25℃~180℃에서의 저장 탄성률을 측정했다.For the obtained flux residue, the storage modulus at 25°C to 180°C was measured using a rheometer based on the measurement conditions below.
(측정 조건)(Measuring conditions)
측정 장치: 레오미터(말번·파날리티칼사 제, KINEXUS 1b+)Measuring device: Rheometer (manufactured by Malvern Panalytical, KINEXUS 1b+)
측정 온도: 20℃~180℃Measurement temperature: 20℃~180℃
지오메트리(상측): 25mmφ, 스텐레스제, 패러랠 플레이트 Geometry (upper side): 25mmϕ, stainless steel, parallel plate
플레이트(하측): 60mmφPlate (lower side): 60mmϕ
모드: 5℃/minMode: 5℃/min
변형: 1%Variation: 1%
주파수: 10HzFrequency: 10Hz
갭: 0.2mmGap: 0.2mm
상기 레오미터를 이용하여 측정한, 100℃에서의 저장 탄성률을 G'100, 손실 탄성률을 G''100, 140℃에서의 저장 탄성률을 G'140, 손실 탄성률을 G''140으로 했다. Measured using the rheometer, the storage modulus at 100°C was G'100 , the loss modulus was G''100 , the storage modulus at 140°C was G'140 , and the loss modulus was G''140 .
Tanδ = G'/G''의 관계식에 근거하여, G'100 및 G''100으로부터 구해지는 100℃에서의 위상각을δ100, G'140 및 G''140으로부터 구해지는 140℃에서의 위상각을δ140으로 했다. 결과를 표 1에 나타낸다. Based on the relationship Tanδ = G'/G'', the phase angle at 100°C obtained from G' 100 and G'' 100 is calculated as δ 100 , G' 140 and G'' 140 at 140°C. The phase angle was set to δ 140 . The results are shown in Table 1.
<점도의 측정><Measurement of viscosity>
상기의 레오미터를 이용하여, 25℃에서의 솔더 페이스트의 점도를 측정하고, 전단 속도가 6 sec-1 때의 점도를 η1, 전단 속도가 1.8sec-1 때의 점도를 η2, 전단 속도가 18 sec-1 때의 점도를 η3으로 하고, η1, η2, η3을 구했다. 또한, Log(η2/η3)로 구해지는 칙소비를 산출했다. 결과를 표 1에 나타낸다.Using the above-described rheometer, the viscosity of the solder paste was measured at 25°C, the viscosity at a shear rate of 6 sec -1 was η1, the viscosity at a shear rate of 1.8 sec -1 was η2, and the shear rate was 18 sec. The viscosity at sec -1 was set to η3, and η1, η2, and η3 were determined. Additionally, the thixotropic ratio determined by Log(η2/η3) was calculated. The results are shown in Table 1.
<고온 마이그레이션 시험><High temperature migration test>
얻어진 솔더 페이스트를, 실프로세스를 본뜨고, 프린트 기판 상의 구리 전극(30) 상에 솔더 페이스트를 인쇄하고, 240℃의 리플로우 처리를 가하고, 구리 전극(30)에 땜납(50)을 접합했다. 이어서, 인쇄 부분의 주변에 잔존하는 플럭스 잔사를 세정하여, 제거했다. 이것에 의해, 도 2에 나타내는 평가용 장치(프린트 기판, 구리 전극(30), 땜납(50)에 의한 구조체) 제작했다.The obtained solder paste was modeled after a real process, the solder paste was printed on the copper electrode 30 on the printed board, a reflow treatment at 240°C was applied, and the solder 50 was joined to the copper electrode 30. Next, the flux residue remaining around the printed portion was washed and removed. As a result, the evaluation device (printed board, copper electrode 30, and solder 50 structure) shown in FIG. 2 was produced.
이어서, 고온 마이그레이션 시험을, 도 2에 나타내는 평가용 장치를 이용하여, 다음과 같이 하여 수행했다.Next, a high temperature migration test was performed as follows using the evaluation device shown in FIG. 2.
도 2에 나타내는 평가용 장치는, 기판과, 기판 상에 설치된 구리 전극(30)과, 구리 전극(30) 상에 설치된 주석을 포함하는 땜납(50)을 구비한다.The evaluation device shown in FIG. 2 includes a substrate, a copper electrode 30 provided on the substrate, and a solder 50 containing tin provided on the copper electrode 30.
상기 (플럭스 잔사의 제작 절차)에서 채취한 플럭스 잔사(22)의 0.002~0.005 g을 이용하여, 미세 간격으로 인접 배치된 구리 전극(30)의 이간부(離間部)에 간극 없게 충전하고, 충전한 플럭스 잔사(22)가 기판 및 땜납(50)에 의해 밀폐되도록 유리 커버(60)를 배치했다.Using 0.002 to 0.005 g of the flux residue 22 collected in the above (flux residue production procedure), fill the gap between the copper electrodes 30 arranged adjacent to each other at a fine interval without any gap, and fill The glass cover (60) was placed so that one flux residue (22) was sealed by the substrate and solder (50).
구리 전극(30)의 사이에 10 V의 정전압을 인가하고, 평가용 장치를 105℃의 온도 환경 중에 보관했다.A constant voltage of 10 V was applied between the copper electrodes 30, and the evaluation device was stored in a temperature environment of 105°C.
그 후, 구리 전극(30)의 이간부에 있어서의 플럭스 잔사(22)에 금속 마이그레이션에 대하여 관찰했다(고온 마이그레이션 시험). Afterwards, metal migration was observed in the flux residue 22 in the separated portion of the copper electrode 30 (high temperature migration test).
이간부에 있어서의 플럭스 잔사(22) 중에 회색 수상(樹狀)의 석출을 확인할 수 있었던 경우, 땜납 중에 포함되는 주석이 마이그레이션했다고 판단했다.When precipitation of a gray water phase was confirmed among the flux residues 22 in the separated portion, it was determined that tin contained in the solder had migrated.
고온 마이그레이션 시험을 3회 실시하고, 각 시험에 있어서의 석출의 유무를 확인했다.The high temperature migration test was performed three times, and the presence or absence of precipitation in each test was confirmed.
표 1 중, 3회 중 3회 모두 석출이 확인되지 않는 경우를 「우(優)」, 3회 중 1회 석출이 확인되었던 경우를 「양(良)」, 3회 중 2회 이상 석출이 확인되었던 경우를 「불가」라고 표기한다.In Table 1, the case in which precipitation was not confirmed in all 3 out of 3 times was designated as “good”, the case in which precipitation was confirmed in 1 out of 3 times was designated as “positive”, and the case in which precipitation was confirmed in 2 or more out of 3 times was designated as “positive”. In cases where it has been confirmed, mark it as “impossible.”
각 실시예의 솔더 페이스트는, 각 비교예의 솔더 페이스트와 비교해서, 고온 마이그레이션 시험에 있어서의 석출이 억제되고 있었기 때문에, 고온 마이그레이션 내성이 뛰어난 결과를 나타냈다.The solder paste of each example showed excellent results in high-temperature migration resistance because precipitation in the high-temperature migration test was suppressed compared to the solder paste of each comparative example.
이 출원은, 2021년 6월 25일에 출원된 일본 출원 특원 2021-105629호를 기초로 하는 우선권을 주장하고, 그 개시된 모두를 여기에 취입한다.This application claims priority based on Japanese Patent Application No. 2021-105629 filed on June 25, 2021, and everything disclosed therein is incorporated herein.
10
구리제 박스
12
구리제 트레이
14
구리제 트레이
20
솔더 페이스트
22
플럭스 잔사
30
구리 전극
50
땜납
60
유리 커버10 copper box
12 Copper tray
14 Copper tray
20 solder paste
22 flux residue
30 copper electrode
50 solder
60 glass cover
Claims (11)
상기 플럭스 조성물이, 베이스 수지, 활성제, 용제, 및 칙소제를 포함하고,
상기 베이스 수지가, 로진계 수지를 포함하고,
하기의 제작 절차에 따라서 당해 솔더 페이스트로부터 얻어진 플럭스 잔사에 대해서, 하기의 측정 조건에 근거하여 레오미터를 이용하여 측정한, 100℃에서의 저장 탄성률을 G'100, 손실 탄성률을 G''100으로 했을 때,
G'100 및 G''100이, G'100>G''100을 만족시키도록 구성되는,
솔더 페이스트.
<플럭스 잔사의 제작 절차>
1. 저면이 45 mmХ45 mm, 높이가 5 mm, 두께: 0.3 mm의 구리제 트레이를 2개 준비한다.
2. 한쪽의 상기 구리제 트레이의 저면 상에, 다른 쪽의 상기 구리제 트레이의 개구가 한쪽의 개구에 대향하도록 겹치고, 테이프로 고정하여, 높이가 약 10 mm의 구리제 박스를 준비한다.
3. 당해 솔더 페이스트를, 5 g 채취하여, 샘플로 한다. 이 샘플을, 한쪽의 상기 구리제 트레이의 내측의 저면 상에, 상기 저면의 80%의 면적을 피복하도록 바른다.
4. 상기 샘플 투입의 상기 구리제 박스에 대해서, 리플로우 로를 이용하여, 대기 하에서, 하기의 온도 프로파일 A~E의 리플로우 처치를 한다.
(온도 프로파일 A~E)
A. 실온 25℃에서 150℃까지, 1.9℃/sec의 승온 속도로 가열한다.
B. 150℃~180℃ 온도역에서, 80 sec 유지한다.
C. 220℃까지, 1.2℃/sec의 승온 속도로 가열한다.
D. 220℃ 이상을 40 sec 유지하고, 피크 온도는 240℃로 가열한다.
E. 그 후, 실온 25℃까지 냉각한다.
5. 리플로우 처리 후, 한쪽의 상기 구리제 트레이의 내측의 저면 상에 잔존하는 플럭스 잔사를 채취한다.
<측정 조건>
측정 장치: 레오미터
측정 온도: 20℃~180℃
지오메트리(상측): 25mmφ, 스텐레스제, 패러랠 플레이트
플레이트(하측): 60mmφ
모드: 5℃/min
변형: 1%
주파수: 10Hz
갭: 0.2mmA solder paste comprising a flux composition and solder powder,
The flux composition includes a base resin, an activator, a solvent, and a thixotropic agent,
The base resin includes a rosin-based resin,
For the flux residue obtained from the solder paste according to the production procedure below, the storage modulus at 100°C was measured as G'100 and the loss modulus as G''100 , measured using a rheometer based on the measurement conditions below. When I did it,
G' 100 and G'' 100 are configured to satisfy G' 100 >G'' 100 ,
solder paste.
<Production procedure for flux residue>
1. Prepare two copper trays with a bottom of 45 mm x 45 mm, a height of 5 mm, and a thickness of 0.3 mm.
2. On the bottom of the copper tray on one side, the opening of the copper tray on the other side is overlapped so that the opening on the other side is opposed to the opening on the other side, and fixed with tape to prepare a copper box with a height of about 10 mm.
3. 5 g of the solder paste is collected and used as a sample. This sample is applied on one inner bottom surface of the copper tray so as to cover 80% of the area of the bottom surface.
4. The copper box for inserting the sample is subjected to reflow treatment using a reflow furnace under the atmosphere with the following temperature profiles A to E.
(Temperature profile A~E)
A. Heat from room temperature 25℃ to 150℃ at a temperature increase rate of 1.9℃/sec.
B. In the temperature range of 150℃~180℃, maintain for 80 sec.
C. Heat to 220°C at a temperature increase rate of 1.2°C/sec.
D. Maintain above 220℃ for 40 sec and heat to peak temperature of 240℃.
E. Afterwards, cool to room temperature of 25°C.
5. After the reflow treatment, the flux residue remaining on the inner bottom surface of one of the copper trays is sampled.
<Measurement conditions>
Measuring device: rheometer
Measurement temperature: 20℃~180℃
Geometry (upper side): 25mmϕ, stainless steel, parallel plate
Plate (lower side): 60mmϕ
Mode: 5℃/min
Variation: 1%
Frequency: 10Hz
Gap: 0.2mm
상기의 측정 조건에 근거하여 레오미터를 이용하여 측정한, 상기의 제작 절차에 따라서 당해 솔더 페이스트로부터 얻어진 플럭스 잔사에 있어서의 140℃에서의 저장 탄성률 및 손실 탄성률로부터 구해지는, 140℃의 위상각을 δ140으로 했을 때, δ140이 1° 이상 45° 미만인, 솔더 페이스트. In claim 1,
The phase angle of 140°C is determined from the storage modulus and loss modulus at 140°C of the flux residue obtained from the solder paste according to the above-described manufacturing procedure, measured using a rheometer based on the above-described measurement conditions. When set to δ 140 , a solder paste in which δ 140 is 1° or more and less than 45°.
상기의 측정 조건에 근거하여 레오미터를 이용하여 측정한, 상기의 제작 절차에 따라서 당해 솔더 페이스트로부터 얻어진 플럭스 잔사에 있어서의 100℃에서의 저장 탄성률 및 손실 탄성률로부터 구해지는, 100℃의 위상각을 δ100으로 했을 때, δ140 및 δ100이, 0.1≤δ140/δ100≤3.0을 만족시키도록 구성되는, 솔더 페이스트. In claim 2,
The phase angle at 100°C is determined from the storage modulus and loss modulus at 100°C in the flux residue obtained from the solder paste according to the above-described production procedure, measured using a rheometer based on the above-described measurement conditions. A solder paste configured so that δ 140 and δ 100 satisfy 0.1 ≤ δ 140 / δ 100 ≤ 3.0 when δ 100 is set.
상기 플럭스 조성물이, 연화점이 135℃ 이상인 로진계 수지를 포함하는, 솔더 페이스트. The method according to any one of claims 1 to 3,
A solder paste in which the flux composition contains a rosin-based resin having a softening point of 135°C or higher.
상기 플럭스 조성물의 함유량이, 당해 솔더 페이스트의 100 중량% 중, 7 중량% 이상 20 중량% 이하인, 솔더 페이스트. The method according to any one of claims 1 to 4,
A solder paste in which the content of the flux composition is 7% by weight or more and 20% by weight or less based on 100% by weight of the solder paste.
상기의 레오미터를 이용하여, 당해 솔더 페이스트에 대해서, 전단 속도: 6sec-1, 25℃의 조건으로 측정했을 때의 점도(η1)가, 5 Pa·s 이상 400 Pa·s 이하인, 솔더 페이스트. The method according to any one of claims 1 to 5,
A solder paste having a viscosity (η1) of 5 Pa·s or more and 400 Pa·s or less when measured using the rheometer above under the conditions of a shear rate of 6 sec -1 and 25°C.
상기의 레오미터를 이용하여, 25℃에서의 당해 솔더 페이스트의 점도를 측정하고, 전단 속도가 1.8sec-1 때의 점도를 η2, 전단 속도가 18 sec-1 때의 점도를 η3으로 했을 때, Log(η2/η3)로 구해지는 칙소비가, 0.3 이상 1.8 이하인, 솔더 페이스트. The method according to any one of claims 1 to 6,
Using the above rheometer, the viscosity of the solder paste at 25°C was measured, and the viscosity at a shear rate of 1.8 sec -1 was η2 and the viscosity at a shear rate of 18 sec -1 was η3, A solder paste having a thixotropic ratio determined by Log(η2/η3) of 0.3 or more and 1.8 or less.
전자 회로 기판과 전자 부품으로 구성되는 밀폐 구조의 주위로, 이들을 접합하기 위해서 이용하는, 솔더 페이스트. The method according to any one of claims 1 to 7,
Solder paste used to join electronic circuit boards and electronic components around a sealed structure.
상기 활성제가, 유기산, 아민류, 할로겐계 활성제, 및 인계 활성제로 이루어지는 군으로부터 선택되는 1 또는 2 이상을 포함하는, 솔더 페이스트. The method according to any one of claims 1 to 8,
A solder paste wherein the activator contains one or two or more selected from the group consisting of organic acids, amines, halogen-based activators, and phosphorus-based activators.
상기 땜납 분말은, 입자 지름이 2~150μm의 범위에 있는 분말의 질량 분율이 80% 이상인, 솔더 페이스트. The method according to any one of claims 1 to 9,
The solder powder is a solder paste in which the mass fraction of powder having a particle diameter in the range of 2 to 150 μm is 80% or more.
상기 납땜 부위에 전자 부품을 실장하는 공정과,
상기 납땜 부위의 주위에 밀폐 구조가 존재하는 상태로, 상기 솔더 페이스트 중의 땜납 분말이 용융하는 온도까지 상기 납땜 부위를 가열하여 상기 전자 부품 및 상기 전자 회로 기판을 접합하는 공정
을 포함하는, 전자 장치의 제조 방법.A process of printing the solder paste of any one of claims 1 to 10 on a soldering portion of an electronic circuit board;
A process of mounting electronic components on the soldering area,
A process of joining the electronic component and the electronic circuit board by heating the solder portion to a temperature at which the solder powder in the solder paste melts, with a sealed structure existing around the solder portion.
Including, a method of manufacturing an electronic device.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021105629A JP7014992B1 (en) | 2021-06-25 | 2021-06-25 | Manufacturing method of solder paste and electronic device |
| JPJP-P-2021-105629 | 2021-06-25 | ||
| PCT/JP2022/022745 WO2022270282A1 (en) | 2021-06-25 | 2022-06-06 | Solder paste and method for producing electronic device |
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| KR20240027027A true KR20240027027A (en) | 2024-02-29 |
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| JP (1) | JP7014992B1 (en) |
| KR (1) | KR20240027027A (en) |
| CN (1) | CN117545585A (en) |
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| WO (1) | WO2022270282A1 (en) |
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| JP2018140429A (en) | 2017-02-28 | 2018-09-13 | 株式会社タムラ製作所 | Flux composition for local soldering and soldering method |
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| JP5486282B2 (en) * | 2009-12-08 | 2014-05-07 | 荒川化学工業株式会社 | Solder paste flux and solder paste |
| JP6370327B2 (en) | 2016-03-30 | 2018-08-08 | 株式会社タムラ製作所 | Solder composition for jet dispenser |
| JP6560283B2 (en) * | 2017-03-17 | 2019-08-14 | 株式会社タムラ製作所 | Flux composition and solder paste |
| JP6653686B2 (en) | 2017-07-25 | 2020-02-26 | 株式会社タムラ製作所 | Solder composition and electronic substrate |
| JP6851352B2 (en) | 2018-09-20 | 2021-03-31 | 株式会社タムラ製作所 | Solder composition for laser soldering and electronic board |
| JP6668586B1 (en) | 2019-08-05 | 2020-03-18 | 千住金属工業株式会社 | Solder composition for jet dispenser |
| JP7066798B2 (en) | 2019-09-20 | 2022-05-13 | 株式会社タムラ製作所 | Solder composition |
| JP2021178336A (en) * | 2020-05-12 | 2021-11-18 | パナソニックＩｐマネジメント株式会社 | Resin flux solder paste and mounting structure |
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| TW202308838A (en) | 2023-03-01 |
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