KR20240026715A - Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus equipped with a showerhead manufactured with reference to a substrate map.
A substrate processing apparatus according to an embodiment of the present invention includes a process chamber that provides a process space for processing a substrate, and a showerhead provided in the process chamber and spraying a process gas to the substrate, wherein the showerhead includes an injection body that receives the process gas, and an injection unit disposed on one side of the injection body to inject the process gas introduced into the injection body, and the injection body is sprayed by the process gas injected from the injection unit. It includes a baffle plate manufactured using map data regarding the thickness distribution of a thin film deposited on a test substrate.

Description

Substrate processing apparatus

The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus equipped with a showerhead manufactured with reference to a substrate map.

To deposit a thin film on a substrate, chemical vapor deposition (CVD) or atomic layer deposition (ALD) may be used. In the case of chemical vapor deposition or atomic layer thin film deposition, the raw material gas may cause a chemical reaction on the surface of the substrate to form a thin film. In particular, in the case of atomic layer thin film deposition, a layer of raw material attached to the surface of the substrate forms a thin film, making it possible to form a thin film with a thickness similar to the diameter of an atom.

The thin film is preferably formed to a uniform thickness over the entire surface of the substrate. However, depending on the characteristics of the showerhead, the thickness of the thin film may be formed non-uniformly. If the thickness of the thin film is formed unevenly, the defect rate may increase.

Therefore, there is a need for an invention that allows depositing a thin film on a substrate with a uniform thickness regardless of the characteristics of the showerhead.

Republic of Korea Patent Publication No. 10-0509231 (2005.08.22)

The problem to be solved by the present invention is to provide a substrate processing device equipped with a showerhead manufactured with reference to a substrate map.

The problems of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

A substrate processing apparatus according to an embodiment of the present invention includes a process chamber that provides a process space for processing a substrate, and a showerhead provided in the process chamber and spraying a process gas to the substrate, wherein the showerhead includes an injection body that receives the process gas, and an injection unit disposed on one side of the injection body to inject the process gas introduced into the injection body, and the injection body is sprayed by the process gas injected from the injection unit. It includes a baffle plate manufactured using map data regarding the thickness distribution of a thin film deposited on a test substrate.

The baffle plate is disposed on an inner surface of the spray body opposite to the spray direction of the spray unit.

The baffle plate has a shape in which the distance from the spray unit increases as the thickness of the thin film deposited on the test substrate increases.

The baffle plate has a shape in which the distance from the spray unit increases or decreases as it progresses from the center to the edge.

A portion of the surface of the baffle plate facing the spray unit has a raised or depressed shape.

The baffle plate is detachable from the spray body.

Specific details of other embodiments are included in the detailed description and drawings.

According to the substrate processing apparatus according to the embodiment of the present invention as described above, there is an advantage in that a thin film can be deposited on a substrate with a uniform thickness regardless of the characteristics of the showerhead.

1 is a diagram showing a substrate processing apparatus according to an embodiment of the present invention.
Figure 2 is a diagram showing the substrate support moved to the process point.
Figure 3 is a diagram showing a thin film deposited so that the thickness decreases as it progresses from the center of the substrate to the edge.
Figure 4 is a diagram showing a thin film deposited so that the thickness increases as it progresses from the center of the substrate to the edge.
Figure 5 is a diagram showing a thin film deposited so that the thickness changes in some areas of the substrate.
Figure 6 is a diagram showing a thin film deposited to include a raised portion.
Figure 7 is a diagram showing a thin film deposited to include a recessed portion.
Figure 8 is a diagram showing a thin film deposited so that raised portions and depressed portions are repeated along the circumferential direction of the substrate.
Figure 9 is a diagram showing that the baffle plate is shaped so that the distance between the spray unit and the baffle plate decreases as it progresses from the center of the baffle plate to the edge.
FIG. 10 is a diagram showing that the baffle plate is shaped so that the distance between the spray unit and the baffle plate increases as it progresses from the center of the baffle plate to the edge.
Figure 11 is a diagram showing that the shape of the baffle plate is formed so that the distance from the spray unit changes in some areas.
Figure 12 is a view showing the shape of the baffle plate to include a recessed portion.
Figure 13 is a view showing the shape of the baffle plate to include a raised portion.
Figure 14 is a diagram for explaining that the baffle plate is detachable from the spray body.
Figure 15 is a block diagram of a showerhead manufacturing apparatus according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various different forms. The present embodiments are merely intended to ensure that the disclosure of the present invention is complete and to provide common knowledge in the technical field to which the present invention pertains. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Unless otherwise defined, all terms (including technical and scientific terms) used in this specification may be used with meanings that can be commonly understood by those skilled in the art to which the present invention pertains. Additionally, terms defined in commonly used dictionaries are not interpreted ideally or excessively unless clearly specifically defined.

FIG. 1 is a diagram illustrating a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram illustrating a substrate support unit moved to a process point.

1 and 2, the substrate processing apparatus 10 according to an embodiment of the present invention includes a process chamber 100, a cover 200, a substrate supporter 300, a driver 400, and a showerhead 500. and a control unit 600.

The process chamber 100 provides a processing space for processing the substrate 700. The process chamber 100 may include an exhaust duct 110, an outlet 120, and a discharge transfer hole 130. The exhaust duct 110 may provide a path for discharging emissions such as process gas or by-products introduced into the process chamber 100 to the outside. For example, the exhaust duct 110 may be arranged in the shape of a ring along the inner edge of the process chamber 100.

The outlet 120 may be formed at the bottom of the process chamber 100. The discharge transfer hole 130 may connect the exhaust duct 110 and the discharge port 120 to provide a transfer path for discharge moving from the exhaust duct 110 to the discharge port 120. Emissions delivered from the inside of the process chamber 100 to the exhaust duct 110 may be discharged to the outside of the process chamber 100 through the emission transfer hole 130.

A substrate entrance 140 may be formed on one side of the process chamber 100 to allow the substrate 700 to enter and exit. The substrate 700 may be brought into the process chamber 100 through the substrate entrance 140 or taken out of the process chamber 100 .

A shutter 150 may be provided at the substrate entrance 140. The shutter 150 may open or close the substrate entrance 140. When the shutter 150 opens the substrate entrance 140, the substrate 700 may be loaded or unloaded through the substrate entrance 140. When a process for the substrate 700 is in progress, the shutter 150 may close the substrate entrance 140 to block the inside of the process chamber 100 from the outside.

The cover 200 serves to seal the upper opening of the process chamber 100. To this end, the cover 200 may be placed on the upper part of the process chamber 100. The cover 200 may be stacked and disposed on the spray body 510 of the showerhead 500, which will be described later. As the cover 200 seals the upper opening of the process chamber 100, the outflow of process gas and the inflow of external substances through the upper opening of the process chamber 100 can be prevented.

The cover 200 may include a cover plate 210, a process gas inlet 220, and a process gas inlet pipe 230. The cover plate 210 is provided in the form of a plate and can seal the upper opening of the process chamber 100. The process gas inlet 220 and the process gas inlet pipe 230 may provide a transfer path for the process gas.

The process gas inlet 220 may be coupled to the cover plate 210, and the process gas inlet pipe 230 may be coupled to the process gas inlet 220. The process gas inlet pipe 230 may be directly or indirectly connected to a process gas tank (not shown). The process gas contained in the process gas tank may be transferred through the process gas inlet 230, and the transferred process gas may be delivered to the showerhead 500 through the process gas inlet 220.

The substrate supporter 300 may support the substrate 700. The substrate supporter 300 may have a seating surface on which the substrate 700 can be seated. A process may be performed on the substrate 700 seated on the seating surface of the substrate supporter 300.

The substrate support 300 may heat the substrate 700. For this purpose. A heater (not shown) may be provided inside the substrate support unit 300. Heat emitted from the heater may be transferred to the substrate 700 through the body of the substrate supporter 300.

The substrate support 300 may include a grounded electrode (not shown). As will be described later, when RF power is supplied to the showerhead 500, an electric field may be formed between the showerhead 500 and the substrate supporter 300.

The substrate support part 300 may be provided with a support pin 310. The support pin 310 may support the substrate 700. Specifically, the support pin 310 may support the substrate 700 so that the substrate 700 is spaced a certain distance from the seating surface of the substrate supporter 300.

In the present invention, the substrate support 300 can move in the vertical direction within the process chamber 100. The driving unit 400 may generate driving force to move the substrate support unit 300 in the vertical direction. FIG. 1 shows the substrate support 300 seated on the bottom surface of the process chamber 100, and FIG. 2 shows the substrate support 300 moved to an upper point inside the process chamber 100. there is.

When the substrate 700 is brought into or taken out of the process chamber 100, the substrate supporter 300 may be seated on the bottom surface of the process chamber 100 as shown in FIG. 1. When a process is performed on the substrate 700, the substrate support 300 may move to an upper point within the process chamber 100, as shown in FIG. 2. Hereinafter, the location of the substrate support unit 300 where a process for the substrate 700 is performed is referred to as a process point.

When a process is performed on the substrate 700, the substrate 700 is preferably seated on the seating surface of the substrate supporter 300. As the substrate 700 is seated on the seating surface of the substrate supporter 300, a process on the substrate 700 may be performed while the movement of the substrate 700 is prevented.

Meanwhile, when the substrate 700 is brought into or taken out of the process chamber 100, the substrate 700 is preferably spaced apart from the seating surface of the substrate supporter 300. A hand (not shown) of a transfer robot (not shown) carrying the substrate 700 may transport the substrate 700 by supporting the lower side of the substrate 700. In order for the hand of the transfer robot to access the lower side of the substrate 700, the substrate 700 must be spaced a certain distance away from the seating surface of the substrate support 300.

The support pin 310 may support the substrate 700 so that the substrate 700 is spaced apart from the seating surface of the substrate supporter 300. The support pin 310 may include a pin head 311 and a pin body 312. The pin head 311 may directly contact the lower side of the substrate 700. The pin body 312 may extend downward from the pin head 311. The pin body 312 may be provided in the shape of a straight bar. The pin body 312 may penetrate the substrate support 300. For this purpose, a through hole may be formed in the substrate support part 300.

The pin body 312 can move freely along the through hole. When the substrate support 300 is seated on the bottom of the process chamber 100, the lower end of the pin body 312 contacts the bottom of the process chamber 100, so that the pin head 311 is attached to the bottom of the substrate support 300. It may be spaced apart from the seating surface. In this case, the substrate 700 supported by the pin head 311 can be spaced apart from the seating surface of the substrate supporter 300. Meanwhile, when the substrate supporter 300 rises, the pin body 312 moves along the through hole and the support pin 310 may descend with respect to the substrate supporter 300. The lowering of the support pin 310 may be performed until the pin head 311 is inserted into the head receiving groove 320 of the substrate support part 300. When the pin head 311 is inserted into the head receiving groove 320, the support of the substrate 700 by the pin head 311 is released, and the substrate 700 can be supported on the seating surface of the substrate support 300. there is.

The diameter of the pin head 311 may be larger than the diameter of the pin body 312. The diameter of the head receiving groove 320 may be larger than the diameter of the through hole, and the diameter of the pin head 311 may be larger than the diameter of the through hole. When the substrate support 300 rises while the pin head 311 is inserted into the head receiving groove 320, the support pin 310 may also rise together with the substrate support 300. When the substrate supporter 300 is raised and positioned at the process point, the substrate 700 may remain seated on the seating surface of the substrate supporter 300.

The showerhead 500 serves to spray process gas for processing the substrate 700 onto the substrate 700 . The showerhead 500 may receive process gas from the process gas inlet 220. The showerhead 500 may be placed at the top of the process chamber 100. The process gas sprayed from the showerhead 500 is sprayed downward and reaches the substrate 700.

In the present invention, the process gas may include a source gas and a reaction gas. The source gas and reaction gas may be injected sequentially. After the source gas and the reaction gas are sprayed from the showerhead 500, they may collide with each other and react. Then, the source gas activated by the reaction gas may contact the substrate 700 to process the substrate 700. For example, the activated source gas may be deposited as a thin film on the substrate 700.

The showerhead 500 may include a spray body 510, a spray unit 520, a guide ring 530, and a baffle plate 540. The injection body 510 may receive process gas. To this end, the injection body 510 may be disposed adjacent to the process gas inlet 220. Additionally, the spray body 510 may be supplied with RF power. For example, an electrode plate (not shown) that receives RF power may be provided on the ceiling of the spray body 510. As described above, the substrate support 300 may include a grounded electrode. When RF power is supplied to the electrode plate, an electric field may be formed between the electrode plate and the electrode of the substrate support 300. The process gas flowing into the process chamber 100 is converted into particles in a plasma state by the electric field formed by the supply of RF power, and the plasma particles react with each other or with the surface of the substrate 700 to form particles on the substrate 700. Processing may be performed.

The injection unit 520 is disposed on one side of the injection body 510 and serves to spray the process gas introduced into the injection body 510. To this end, the injection unit 520 may be provided with a spray hole 521 through which process gas is sprayed. A plurality of injection holes 521 may be formed in the injection unit 520 in a shape corresponding to one side of the substrate 700.

A diffusion space (S) may be formed between the injection body 510 and the injection unit 520. The process gas introduced through the injection body 510 may be diffused in the diffusion space S and then injected through a plurality of injection holes 521.

The guide ring 530 may surround the edges of the injection body 510 and the injection unit 520 in the form of a ring. In the present invention, the injection body 510 and the injection unit 520 may be combined. The guide ring 530 may surround the joined portion of the injection body 510 and the injection unit 520. The guide ring 530 can prevent process gas from leaking through the joint portion of the injection body 510 and the injection unit 520.

In addition, the guide ring 530 serves to guide the discharged material after the process for the substrate 700 has been completed to the exhaust duct 110. The process chamber 100 may be provided with a chamber ring 160. The chamber ring 160 may be disposed in the shape of a ring inside the process chamber 100. The chamber ring 160 may surround the edge of the substrate support 300 located at the process point. A space (hereinafter referred to as a transfer space) for transporting discharged substances may be formed between the guide ring 530 and the chamber ring 160. Emissions such as process gas and reaction gas upon completion of the process for the substrate 700 may move to the exhaust duct 110 through the transfer space. Since the size of the exhaust duct 110 is relatively larger than the size of the transfer space, the pressure of the exhaust duct 110 may be made smaller than the pressure of the transfer space. Because of this, the discharge from the exhaust duct 110 can be prevented from flowing back into the transfer space.

The baffle plate 540 may be disposed on the inner surface of the spray body 510 on the opposite side of the spray direction of the spray unit 520. The diffusion space S described above may be formed by the injection unit 520 and the baffle plate 540.

An edge ring 330 may be formed on the substrate support 300. The edge ring 330 may be disposed in the shape of a ring along the edge of the substrate support 300. The edge ring 330 may prevent process gas from moving into the lower space of the process chamber 100 . When the substrate support 300 is located at a process point, the edge ring 330 may be spaced apart from the chamber ring 160 at a certain distance. With the edge ring 330 and the chamber ring 160 spaced apart from each other at regular intervals, a purge gas is supplied to the lower space of the process chamber 100, and the supplied purge gas is supplied to the edge ring 330 and the chamber ring 160. It may be provided to the upper space of the process chamber 100 through this spaced gap. Accordingly, the process gas supplied to the upper space of the process chamber 100 is blocked from moving to the lower space, and the process gas can move to the outlet 120 through the exhaust duct 110 and the discharge transfer hole 130. there is. Here, the upper space may represent a space where process gas is introduced and a process for the substrate 700 is performed, and the lower space may represent a space excluding the upper space. As the gas movement between the upper space and the lower space is blocked, the density of the process gas flowing into the upper space is maintained, and the reaction efficiency of the process gas reacting with the substrate 700 can be improved.

The control unit 600 may perform overall control of the substrate processing apparatus 10 . For example, the control unit 600 may operate the shutter 150 to open and close the substrate entrance 140 or control the driver 400 to move the substrate support unit 300. Additionally, the control unit 600 may control the injection of source gas or reaction gas through the showerhead 500 or control the supply of RF power to the electrode plate of the showerhead 500.

The substrate processing apparatus 10 according to an embodiment of the present invention can deposit a thin film on the substrate 700. Specifically, the substrate processing device 10 deposits a thin film on the substrate 700 using plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD). You can.

The thin film is preferably deposited to a uniform thickness over the entire area of the substrate 700. Meanwhile, the thickness of the thin film deposited on the substrate 700 may be uneven due to design errors or manufacturing errors. For example, the spray unit 520 includes a plurality of spray holes 521, and the process gas is concentrated in some areas of the substrate 700 due to the spacing, diameter, and spray direction between the spray holes 521, thereby forming the thin film. It can be formed to be thick.

3 to 8 show that the thickness of the thin film deposited on the substrate 700 is formed non-uniformly in various ways.

Figure 3 is a diagram showing a thin film deposited so that the thickness decreases as it progresses from the center of the substrate to the edge, Figure 4 is a diagram showing a thin film deposited so that the thickness increases as it progresses from the center of the substrate to the edge, and Figure 5 is a diagram showing a thin film deposited so that the thickness changes in some areas of the substrate, Figure 6 is a diagram showing a thin film deposited to include a raised portion, and Figure 7 is a diagram showing a thin film deposited to include a depressed portion. 8 is a diagram showing a thin film deposited so that the raised portions and depressed portions are repeated along the circumferential direction of the substrate.

As shown in FIG. 3, the thin film 800 may be deposited so that its thickness decreases as it progresses from the center to the edge of the substrate 700. FIG. 3 shows that the thickness of the thin film 800 decreases as it progresses to the edge over the entire area of the substrate 700.

As shown in FIG. 4, the thin film 800 may be deposited so that its thickness increases as it progresses from the center to the edge of the substrate 700. FIG. 4 shows that the thickness of the thin film 800 increases as it progresses to the edge over the entire area of the substrate 700.

As shown in FIG. 5 , the thin film 800 may be deposited so that the thickness of the thin film 800 changes in some areas of the substrate 700 . Figure 5 shows that the thickness of the thin film 800 is uniformly formed in some areas of the substrate 700, and that the thickness of the thin film 800 increases as it progresses from the center to the edge of the substrate 700 in other areas of the substrate 700. It shows an increase.

As shown in FIGS. 6 and 7 , the thin film 800 may include a raised portion or a depressed portion. As shown in FIG. 8 , the thin film 800 may include raised portions and depressed portions along the circumferential direction of the substrate 700 . In Figure 8, the shaded area represents a raised portion, and the remaining area represents a depressed portion.

If process gases sprayed from adjacent spray holes 521 overlap, a raised portion may be formed, and if the process gas is not sprayed to a specific area of the substrate 700, a depressed portion may be formed.

In this way, the thickness of the thin film 800 formed on the substrate 700 may be formed non-uniformly in various ways. If the thin film 800 is formed unevenly, products manufactured using it may provide reduced performance or malfunction.

The substrate 700 processing device according to an embodiment of the present invention can prevent the thickness of the thin film 800 deposited on the substrate 700 from being formed unevenly due to design errors or manufacturing errors. Specifically, the substrate processing apparatus 10 may appropriately form a pressure distribution of the process gas sprayed from the spray unit 520 so that the thickness of the thin film 800 is formed uniformly. To this end, the substrate processing apparatus 10 may include an appropriate baffle plate 540. The pressure of the process gas is adjusted according to the distance between the baffle plate 540 and the spray unit 520, so that the thickness of the thin film 800 can be formed uniformly.

FIG. 9 is a diagram showing that the baffle plate is shaped so that the distance between the spray unit 520 and the baffle plate decreases as it progresses from the center of the baffle plate to the edge.

Referring to FIG. 9, the baffle plate 540 of the substrate processing apparatus 10 according to an embodiment of the present invention is formed so that the distance between the spray unit 520 and the baffle plate 540 decreases as it progresses from the center to the edge. It can be.

In this case, the process gas may be injected at a higher pressure from the edge of the injection unit 520 compared to the center of the injection unit 520. Accordingly, the process gas is sprayed at a higher pressure at the edge of the substrate 700 compared to the center, and the thickness of the thin film 800 formed at the edge of the substrate 700 can be supplemented.

As shown in FIG. 3, when the thin film 800 is deposited so that the thickness decreases as it progresses from the center to the edge of the substrate 700, the entire substrate 700 is reduced by applying the baffle plate 540 shown in FIG. 9. A thin film 800 with a uniform thickness over the area may be formed.

FIG. 10 is a diagram showing that the baffle plate is shaped so that the distance between the spray unit and the baffle plate increases as it progresses from the center of the baffle plate to the edge.

Referring to FIG. 10, the baffle plate 540 of the substrate processing apparatus 10 according to an embodiment of the present invention is formed so that the distance between the spray unit 520 and the baffle plate 540 increases as it progresses from the center to the edge. It can be.

In this case, the process gas may be injected at a higher pressure from the center of the injection unit 520 than from the edge of the injection unit 520. Accordingly, the process gas is injected at a higher pressure from the center than the edge of the substrate 700, and the thickness of the thin film 800 formed at the center of the substrate 700 can be supplemented.

As shown in FIG. 4 , when the thin film 800 is deposited so that the thickness increases as it progresses from the center to the edge of the substrate 700, the entire substrate 700 is covered by applying the baffle plate 540 shown in FIG. 10. A thin film 800 with a uniform thickness over the area may be formed.

Figure 11 is a diagram showing that the shape of the baffle plate is formed so that the distance from the spray unit changes in some areas.

Referring to FIG. 11 , the baffle plate 540 of the substrate processing apparatus 10 according to an embodiment of the present invention may be formed so that the distance from the spray unit 520 changes in some areas.

In this case, the process gas may be sprayed at a uniform pressure in some areas of the spray unit 520, and in areas where the distance changes, the process gas may be sprayed at a pressure depending on the distance between the baffle plate 540 and the spray unit 520. there is.

As shown in FIG. 5 , when the thin film 800 is deposited so that the thickness changes in some areas of the substrate 700, it is deposited over the entire area of the substrate 700 by applying the baffle plate 540 shown in FIG. 11. A thin film 800 of uniform thickness can be formed.

FIG. 12 is a view showing the shape of the baffle plate formed to include a recessed portion, and FIG. 13 is a view showing the shape of the baffle plate being formed to include a raised portion.

Referring to FIGS. 12 and 13 , the baffle plate 540 of the substrate processing apparatus 10 according to an embodiment of the present invention may include a recessed portion or a raised portion.

The depressed portion and the raised portion may be formed toward the injection unit 520. A lower pressure may be formed in a depressed part compared to other parts, and a higher pressure may be formed in a raised part compared to other parts.

As shown in FIG. 6, when a raised thin film 800 is formed on the substrate 700, a thin film of uniform thickness over the entire area of the substrate 700 is formed by applying the baffle plate 540 shown in FIG. 12. 800) may be formed. In addition, as shown in FIG. 7, when a recessed thin film 800 is formed in the substrate 700, a uniform thickness is formed over the entire area of the substrate 700 by applying the baffle plate 540 shown in FIG. 13. A thin film 800 may be formed.

Figure 14 is a diagram for explaining that the baffle plate is detachable from the spray body.

Referring to FIG. 14 , the baffle plate 540 of the substrate processing apparatus 10 according to an embodiment of the present invention may be detached from the spray body 510.

Different baffle plates 540 can be coupled to or disengaged from the injection body 510. The user can select an appropriate baffle plate 540 and couple it to the spray body 510 by referring to the thickness distribution of the thin film 800 formed on the substrate 700. The baffle plate 540 may be coupled to the spray body 510 using a coupling means such as a screw, or may be coupled to the spray body 510 using a separate fastening means.

Figure 15 is a block diagram of a showerhead manufacturing apparatus according to an embodiment of the present invention.

Referring to FIG. 15, the showerhead manufacturing device 900 according to an embodiment of the present invention includes an input unit 910, a storage unit 920, a control unit 930, a map data analysis unit 940, and a modeling unit 950. and a plate manufacturing unit 960.

The input unit 910 serves to receive map data regarding the thickness distribution of the thin film 800 deposited on the test substrate by the process gas injected from the showerhead 500.

A thin film 800 may be deposited on a test substrate using a baffle plate 540 having a flat shape, and map data for the same may be generated. Map data may be generated using separate map data generation equipment (not shown) for this purpose. The map data generation equipment can check the thickness distribution of the thin film 800 and generate map data by irradiating X-rays or lasers to the surface of the test substrate on which the thin film 800 is deposited. The input unit 910 can receive corresponding map data.

The storage unit 920 may temporarily or permanently store map data input through the input unit 910. Additionally, the storage unit 920 may store modeling data generated by the modeling unit 950, which will be described later.

The map data analysis unit 940 may analyze map data input through the input unit 910. For example, the map data analysis unit 940 may check the thickness distribution of the thin film 800 deposited on the test substrate.

The modeling unit 950 may model the shape of the baffle plate 540 of the showerhead 500 according to the analysis result of the map data analysis unit 940. The modeling unit 950 may model the shape of the baffle plate 540 so that the distance between the injection unit 520 and the baffle plate 540 increases as the thickness of the thin film 800 deposited on the test substrate increases. Likewise, the modeling unit 950 can model the shape of the baffle plate 540 so that the thinner the thickness of the thin film 800 deposited on the test substrate is, the smaller the distance between the injection unit 520 and the baffle plate 540 is. there is.

As the distance between the injection unit 520 and the baffle plate 540 increases, the process gas is injected at a higher pressure in the area, and as the distance between the injection unit 520 and the baffle plate 540 decreases, the process gas is injected at a lower pressure in the area. Process gas may be injected.

The modeling unit 950 may model the shape of the baffle plate 540 so that the distance between the spray unit 520 and the baffle plate 540 increases or decreases as it progresses from the center of the baffle plate 540 to the edge. For example, the modeling unit 950 may model the shape of the baffle plate 540 shown in FIG. 9 or 10.

The modeling unit 950 may model the shape of the baffle plate 540 so that a portion of the surface of the baffle plate 540 facing the spray unit 520 is raised or depressed. For example, the modeling unit 950 may model the shape of the baffle plate 540 shown in FIGS. 11 to 13 .

The modeling unit 950 may model the shape of the baffle plate 540 and transmit the modeling results to the plate manufacturing unit 960.

The plate manufacturing unit 960 may manufacture the baffle plate 540 with reference to the modeling results of the modeling unit 950. For example, the plate manufacturing unit 960 may manufacture the baffle plate 540 in any one shape among the baffle plates 540 shown in FIGS. 9 to 13 .

The above has described that the plate manufacturing unit 960 is included in the showerhead manufacturing apparatus 900, but according to some embodiments of the present invention, the plate manufacturing unit 960 is a plate manufacturing apparatus separate from the showerhead manufacturing apparatus 900 ( (not shown) may also be provided. In this case, the showerhead manufacturing apparatus 900 may output a modeling result for the optimal shape of the baffle plate 540 to make the thickness of the thin film 800 uniform by referring to the analysis result of the map data. The output modeling results can be provided to a plate manufacturing device and used to manufacture the baffle plate 540.

In addition, when the plate manufacturing unit 960 is provided as a separate plate manufacturing device, the input unit 910, storage unit 920, control unit 930, map data analysis unit 940, and modeling unit 950 are used in the substrate processing device. It can be provided in (10). In this case, the substrate processing device 10 may model the shape of the baffle plate by analyzing the input map data.

The control unit 930 performs overall control over the input unit 910, storage unit 920, map data analysis unit 940, modeling unit 950, and plate production unit 960.

The baffle plate 540 manufactured by the showerhead manufacturing apparatus 900 can be applied to the substrate processing apparatus 10 according to an embodiment of the present invention. That is, the injection body 510 of the substrate processing apparatus 10 according to an embodiment of the present invention provides map data regarding the thickness distribution of the thin film 800 deposited on the test substrate by the process gas injected from the injection unit 520. It may include a baffle plate 540 manufactured using .

At this time, the baffle plate 540 has a shape in which the distance from the injection unit 520 increases as the thickness of the thin film 800 deposited on the test substrate becomes thicker, and the thinner the thickness of the thin film 800 deposited on the test substrate is, the more the baffle plate 540 has a shape. It may have a shape in which the distance from the injection unit 520 is reduced. In addition, the baffle plate 540 has a shape in which the distance from the spray unit 520 increases or decreases as it progresses from the center to the edge, or a portion of its surface facing the spray unit 520 has a shape that is raised or depressed. You can have it.

In particular, the baffle plate 540 manufactured by the showerhead manufacturing apparatus 900 is detachable from the spray body 510. Accordingly, the user can form a thin film 800 with a uniform thickness on the substrate 700 by combining the baffle plate 540 appropriate for each situation to the spray body 510.

Although embodiments of the present invention have been described with reference to the above and the attached drawings, those skilled in the art will understand that the present invention can be implemented in other specific forms without changing its technical idea or essential features. You will understand that it exists. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive.

10: substrate processing device 100: process chamber
200: Cover 300: Substrate support
400: Drive part 500: Shower head
510: injection body 520: injection unit
530: Guide ring 540: Baffle plate
600: Control unit 700: Board
800: Thin film 900: Showerhead manufacturing device
910: input unit 920: storage unit
930: Control unit 940: Map data analysis unit
950: Modeling Department 960: Plate Production Department

Claims (7)

A process chamber that provides a processing space for processing a substrate; and
A showerhead provided in the process chamber and spraying a process gas to the substrate,
The shower head is,
an injection body that receives the process gas; and
A spray unit disposed on one side of the spray body and spraying the process gas introduced into the spray body,
The injection body is a substrate processing device including a baffle plate manufactured using map data regarding the thickness distribution of a thin film deposited on a test substrate by the process gas injected from the injection unit. According to claim 1,
The baffle plate is disposed on an inner surface of the spraying body opposite to the spraying direction of the spraying unit. According to claim 1,
The baffle plate is a substrate processing device having a shape in which the distance from the spray unit increases as the thickness of the thin film deposited on the test substrate increases. According to claim 1,
The baffle plate is a substrate processing device having a shape in which the distance from the spray unit increases or decreases as it progresses from the center to the edge. According to claim 1,
A portion of the surface of the baffle plate facing the spray unit has a raised or depressed shape. According to claim 1,
A substrate processing device wherein the baffle plate is detachable from the spray body. According to claim 1,
an input unit that receives map data regarding the thickness distribution of a thin film deposited on a test substrate by the process gas sprayed from the showerhead;
a map data analysis unit that analyzes the map data; and
Further comprising a modeling unit that models the shape of the baffle plate according to the analysis results,
A substrate processing device in which the shape of the baffle plate corresponds to a modeling result output by the modeling unit.

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