KR20240048421A - Apparatus and method for processing substrate - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and method, and to a substrate processing apparatus and method that controls the supply of power for plasma formation with reference to the injection state of process gas.
A substrate processing apparatus according to an embodiment of the present invention includes a process chamber that provides a process space for processing a substrate, a power supply unit that supplies RF power for generating plasma to the process chamber, and a process chamber that is injected into the process chamber. It includes a control unit that controls the power supply unit with reference to the flow rate of the process gas, wherein the control unit controls the power supply unit so that the RF power is supplied after the flow rate of the process gas injected into the process chamber is uniform.

Description

Substrate processing apparatus and method {Apparatus and method for processing substrate}

The present invention relates to a substrate processing apparatus and method, and more particularly, to a substrate processing apparatus and method that controls the supply of power for plasma formation with reference to the injection state of process gas.

To deposit a thin film on a substrate, chemical vapor deposition (CVD) or atomic layer deposition (ALD) may be used. In the case of chemical vapor deposition or atomic layer thin film deposition, the source gas may cause a chemical reaction on the surface of the substrate to form a thin film. In particular, in the case of atomic layer thin film deposition, it is possible to form a thin film with a thickness similar to the diameter of an atom because one layer of the raw material gas attached to the surface of the substrate forms a thin film.

To expand the range of process temperature, plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD) may be used. Since plasma chemical vapor deposition and plasma atomic layer thin film deposition can be processed at a lower temperature than chemical vapor deposition and atomic layer thin film deposition, the physical properties of the thin film can be improved.

The method using the formation of plasma involves applying power to the injected process gas to convert it into plasma particles. Meanwhile, if power is applied while the process gas is not normally injected, normal formation of plasma particles may not be performed and the process may be stopped.

Accordingly, there is a need for an invention that enables the formation of normal plasma particles by appropriately setting the point of application of power.

Republic of Korea Patent Publication No. 10-2016-0011155 (2016.01.29)

The problem to be solved by the present invention is to provide a substrate processing apparatus and method that controls the supply of power for plasma formation by referring to the injection state of the process gas.

The problems of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

A substrate processing apparatus according to an embodiment of the present invention includes a process chamber that provides a process space for processing a substrate, a power supply unit that supplies RF power for generating plasma to the process chamber, and a process chamber that is injected into the process chamber. It includes a control unit that controls the power supply unit with reference to the flow rate of the process gas, wherein the control unit controls the power supply unit so that the RF power is supplied after the flow rate of the process gas injected into the process chamber is uniform.

The control unit controls the power supply unit so that the RF power is not supplied when the change in flow rate of the process gas injected into the process chamber exceeds a preset threshold change amount and the duration of time elapses a preset threshold change time. .

The control unit controls the power supply unit so that the RF power is supplied when the change in flow rate of the process gas injected into the process chamber is less than or equal to a preset critical stabilization amount and the duration of time elapses a preset critical stabilization time.

The critical change amount is set to be greater than or equal to the critical stable amount.

The threshold change time is set to be smaller than or equal to the threshold stability time.

The amount of change in the flow rate includes the standard deviation of the flow rate.

The process gas includes a precursor.

Specific details of other embodiments are included in the detailed description and drawings.

According to the substrate processing apparatus and method according to the embodiment of the present invention as described above, the supply of power for plasma formation is controlled with reference to the injection state of the process gas, so there is an advantage in enabling the formation of normal plasma particles.

1 is a diagram showing a substrate processing apparatus according to an embodiment of the present invention.
Figure 2 is a diagram showing the substrate support moved to the process point.
Figure 3 is a diagram showing a substrate processing method according to an embodiment of the present invention.
Figure 4 is a diagram showing that the amount of change in the flow rate of process gas exceeds the critical change amount.
Figure 5 is a diagram showing that the amount of change in the flow rate of the process gas is converted to below the critical stable amount.
Figure 6 is a diagram for explaining the relationship between the flow rate of process gas and power supply.
FIG. 7 is a diagram illustrating the relationship between the change in flow rate of process gas and power supply.
Figure 8 is a flowchart of a substrate processing method according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various different forms. The present embodiments are merely intended to ensure that the disclosure of the present invention is complete and to provide common knowledge in the technical field to which the present invention pertains. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Unless otherwise defined, all terms (including technical and scientific terms) used in this specification may be used with meanings that can be commonly understood by those skilled in the art to which the present invention pertains. Additionally, terms defined in commonly used dictionaries are not interpreted ideally or excessively unless clearly specifically defined.

FIG. 1 is a diagram showing a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram showing a substrate support unit moved to a process point.

Referring to FIGS. 1 and 2 , the substrate processing apparatus 10 according to an embodiment of the present invention includes a process chamber 100, a cover 200, a substrate support unit 300, an elevation unit 400, and a showerhead 500. ), a control unit 600, a pressure regulator 700, and a power supply unit 800.

The process chamber 100 provides a processing space for processing the substrate W. The process chamber 100 may include an exhaust duct 110, an outlet 120, and a discharge transfer hole 130. The exhaust duct 110 may provide a path for discharging emissions such as process gas or by-products introduced into the process chamber 100 to the outside. For example, the exhaust duct 110 may be arranged in the shape of a ring along the inner edge of the process chamber 100.

The outlet 120 may be formed at the bottom of the process chamber 100. The discharge transfer hole 130 may connect the exhaust duct 110 and the discharge port 120 to provide a transfer path for discharge moving from the exhaust duct 110 to the discharge port 120. Emissions delivered from the inside of the process chamber 100 to the exhaust duct 110 may be discharged to the outside of the process chamber 100 through the emission transfer hole 130.

A substrate entrance 140 may be formed on one side of the process chamber 100 to allow entry and exit of the substrate W. The substrate W may be brought into the inside of the process chamber 100 or taken out of the process chamber 100 through the substrate entrance 140 .

A shutter 150 may be provided at the substrate entrance 140. The shutter 150 may open or close the substrate entrance 140. When the shutter 150 opens the substrate entrance 140, the substrate W may be brought in or out through the substrate entrance 140. When a process for the substrate W is in progress, the shutter 150 may close the substrate entrance 140 to block the inside of the process chamber 100 from the outside.

The cover 200 serves to seal the upper opening of the process chamber 100. To this end, the cover 200 may be placed on the upper part of the process chamber 100. The cover 200 may be stacked and disposed on the spray body 510 of the showerhead 500, which will be described later. As the cover 200 seals the upper opening of the process chamber 100, the outflow of process gas and the inflow of external substances through the upper opening of the process chamber 100 can be prevented.

The cover 200 may include a cover plate 210, a process gas inlet 220, and a process gas inlet pipe 230. The cover plate 210 is provided in the form of a plate and can seal the upper opening of the process chamber 100. The process gas inlet 220 and the process gas inlet pipe 230 may provide a transfer path for the process gas.

The process gas inlet 220 may be coupled to the cover plate 210, and the process gas inlet pipe 230 may be coupled to the process gas inlet 220. A pressure regulator 700 may be connected to the process gas inlet pipe 230. The pressure regulator 700 may be directly or indirectly connected to a process gas tank (not shown). The process gas contained in the process gas tank may be transferred to the process gas inlet 230 through the pressure regulator 700, and the transferred process gas may be delivered to the showerhead through the process gas inlet.

The pressure regulator 700 serves to adjust the pressure of the process gas supplied to the process gas inlet pipe 230. For example, the pressure regulator 700 may include a pressure regulator tank (not shown) that temporarily stores process gas. The process gas supplied from the process gas tank may be transferred to the process gas inlet pipe 230 through the pressure control tank. Since the pressure control tank functions as a buffer, the pressure of the process gas transferred to the process gas inlet pipe 230 can be maintained uniformly.

Additionally, the pressure regulator 700 may include a flow meter (not shown) that measures the flow rate of the process gas supplied to the process gas inlet pipe 230. The flow rate of the process gas measured by the flow meter is transmitted to the control unit 600, and as described later, the control unit 600 can control whether to supply RF power by referring to the flow rate.

The substrate supporter 300 is provided in the process chamber 100 and can support the substrate W. The substrate supporter 300 may have a seating surface on which the substrate W can be seated. A process may be performed on the substrate W seated on the seating surface of the substrate support 300.

The substrate support 300 may heat the substrate W. For this purpose. A heater (not shown) may be provided inside the substrate support unit 300. Heat emitted from the heater may be transferred to the substrate W through the body of the substrate support 300.

The substrate support 300 may include a grounded electrode (not shown). As will be described later, when RF power is supplied to the showerhead 500, an electric field may be formed between the showerhead 500 and the substrate supporter 300.

The substrate support part 300 may be provided with a support pin 310. The support pin 310 may support the substrate W. Specifically, the support pin 310 may support the substrate W so that the substrate W is spaced apart from the seating surface of the substrate support 300 by a certain distance.

In the present invention, the substrate support 300 can move in the vertical direction within the process chamber 100. The lifting unit 400 may generate driving force to move the substrate support unit 300 in the vertical direction. FIG. 1 shows the substrate support 300 seated on the bottom surface of the process chamber 100, and FIG. 2 shows the substrate support 300 moved to an upper point inside the process chamber 100. there is.

When the substrate W is brought into or taken out of the process chamber 100, the substrate support 300 may be seated on the bottom surface of the process chamber 100, as shown in FIG. 1. When a process is performed on the substrate W, the substrate support 300 may move to an upper point within the process chamber 100 as shown in FIG. 2 . Hereinafter, the location of the substrate support 300 where a process for the substrate W is performed is referred to as a process point.

When a process is performed on the substrate W, the substrate W is preferably seated on the seating surface of the substrate support 300. As the substrate W is seated on the seating surface of the substrate support 300, a process on the substrate W may be performed while the movement of the substrate W is prevented.

Meanwhile, when the substrate W is brought into or taken out of the process chamber 100, the substrate W is preferably spaced apart from the seating surface of the substrate support 300. A hand (not shown) of a transfer robot (not shown) carrying the substrate (W) may transport the substrate (W) by supporting the lower side of the substrate (W). In order for the hand of the transfer robot to access the lower side of the substrate W, the substrate W must be spaced a certain distance away from the seating surface of the substrate support 300.

The support pin 310 may support the substrate W so that the substrate W is spaced apart from the seating surface of the substrate support 300. The support pin 310 may include a pin head 311 and a pin body 312. The pin head 311 may directly contact the lower side of the substrate (W). The pin body 312 may extend downward from the pin head 311. The pin body 312 may be provided in the shape of a straight bar. The pin body 312 may penetrate the substrate support 300. For this purpose, a through hole may be formed in the substrate support part 300.

The pin body 312 can move freely along the through hole. When the substrate support 300 is seated on the bottom of the process chamber 100, the lower end of the pin body 312 contacts the bottom of the process chamber 100, so that the pin head 311 is attached to the bottom of the substrate support 300. It may be spaced apart from the seating surface. In this case, the substrate W supported by the pin head 311 can be spaced apart from the seating surface of the substrate support 300. Meanwhile, when the substrate supporter 300 rises, the pin body 312 moves along the through hole and the support pin 310 may descend with respect to the substrate supporter 300. The support pin 310 may be lowered until the pin head 311 is inserted into the head receiving groove 320 of the substrate support part 300. When the pin head 311 is inserted into the head receiving groove 320, the support of the substrate W by the pin head 311 is released, and the substrate W can be supported on the seating surface of the substrate support 300. there is.

The diameter of the pin head 311 may be larger than the diameter of the pin body 312. The diameter of the head receiving groove 320 may be larger than the diameter of the through hole, and the diameter of the pin head 311 may be larger than the diameter of the through hole. When the substrate supporter 300 rises while the pin head 311 is inserted into the head receiving groove 320, the support pin 310 may also rise together with the substrate supporter 300. When the substrate supporter 300 is raised and positioned at the process point, the substrate W may remain seated on the seating surface of the substrate supporter 300.

The showerhead 500 serves to spray process gas for processing the substrate W onto the substrate W. The showerhead 500 may receive process gas from the process gas inlet 220. The showerhead 500 may be placed at the top of the process chamber 100. The process gas sprayed from the showerhead 500 is sprayed downward and reaches the substrate W.

In the present invention, the process gas may include a source gas and a reaction gas. The source gas and reaction gas may be injected sequentially. After the source gas and the reaction gas are sprayed from the showerhead 500, they may collide with each other and react. Then, the source gas activated by the reaction gas may contact the substrate W to perform processing on the substrate W. For example, the activated source gas may be deposited as a thin film on the substrate W.

In the present invention, the process gas may be a precursor, but the process gas of the present invention is not limited to the precursor.

The showerhead 500 may include a spray body 510, a spray unit 520, and a guide ring 530. The injection body 510 may receive process gas. To this end, the injection body 510 may be disposed adjacent to the process gas inlet 220. Additionally, the spray body 510 may receive RF power from the power supply unit 800. For example, an electrode plate (not shown) that receives RF power may be provided on the ceiling of the spray body 510. As described above, the substrate support 300 may include a grounded electrode. When RF power is supplied to the electrode plate, an electric field may be formed between the electrode plate and the electrode of the substrate support 300. The process gas flowing into the process chamber 100 is converted into particles in a plasma state by the electric field formed by the supply of RF power, and the plasma particles react with each other or with the surface of the substrate W to form particles on the substrate W. Processing may be performed.

The injection unit 520 is disposed on one side of the injection body 510 and serves to spray the process gas introduced into the injection body 510. To this end, the injection unit 520 may be provided with a spray hole 521 through which process gas is sprayed. A plurality of injection holes 521 may be formed in the injection unit 520 in a shape corresponding to one side of the substrate W.

A diffusion space (S) may be formed between the injection body 510 and the injection unit 520. The process gas introduced through the injection body 510 may be diffused in the diffusion space S and then injected through a plurality of injection holes 521.

The guide ring 530 may surround the edges of the injection body 510 and the injection unit 520 in the form of a ring. In the present invention, the injection body 510 and the injection unit 520 may be combined. The guide ring 530 may surround the joined portion of the injection body 510 and the injection unit 520. The guide ring 530 can prevent process gas from leaking through the joint portion of the injection body 510 and the injection unit 520.

In addition, the guide ring 530 serves to guide the discharged material after the process for the substrate W has been completed to the exhaust duct 110. The process chamber 100 may be provided with a chamber ring 160. The chamber ring 160 may be disposed in the shape of a ring inside the process chamber 100. The chamber ring 160 may surround the edge of the substrate support 300 located at the process point. A space (hereinafter referred to as a transfer space) for transporting discharged substances may be formed between the guide ring 530 and the chamber ring 160. Emissions such as process gas and reaction gas upon completion of the process for the substrate W may move to the exhaust duct 110 through the transfer space. Since the size of the exhaust duct 110 is relatively larger than the size of the transfer space, the pressure of the exhaust duct 110 may be made smaller than the pressure of the transfer space. Because of this, the discharge from the exhaust duct 110 can be prevented from flowing back into the transfer space.

An edge ring 330 may be formed on the substrate support 300. The edge ring 330 may be disposed in the shape of a ring along the edge of the substrate support 300. The edge ring 330 may prevent process gas from moving into the lower space of the process chamber 100 . When the substrate support 300 is located at a process point, the edge ring 330 may be spaced apart from the chamber ring 160 at a certain distance. With the edge ring 330 and the chamber ring 160 spaced apart at a predetermined interval, a purge gas is supplied to the lower space of the process chamber 100, and the supplied purge gas is supplied to the edge ring 330 and the chamber ring 160. It may be provided to the upper space of the process chamber 100 through this spaced gap. Accordingly, the process gas supplied to the upper space of the process chamber 100 is blocked from moving to the lower space, and the process gas can move to the outlet 120 through the exhaust duct 110 and the discharge transfer hole 130. there is. Here, the upper space may represent a space where process gas is introduced and a process on the substrate W is performed, and the lower space may represent a space excluding the upper space. As gas movement between the upper space and the lower space is blocked, the density of the process gas flowing into the upper space is maintained, and the reaction efficiency of the process gas reacting with the substrate W can be improved.

The power supply unit 800 may supply RF power for generating plasma to the process chamber 100 . As described above, RF power from the power supply unit 800 may be supplied to the spray body of the showerhead.

The control unit 600 may perform overall control of the substrate processing apparatus 10 . For example, the control unit 600 may operate the shutter 150 to open and close the substrate entrance 140 or control the elevating unit 400 to move the substrate support unit 300. Additionally, the control unit 600 may control the injection of source gas or reaction gas through the showerhead 500 or control the supply of RF power by the power supply unit 800.

The substrate processing apparatus 10 according to an embodiment of the present invention can deposit a thin film on the substrate W. Specifically, the substrate processing device 10 deposits a thin film on the substrate W using plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD). You can.

Figure 3 is a diagram showing a substrate processing method according to an embodiment of the present invention.

Referring to FIG. 3, source gas may be injected into the process chamber 100 equipped with a substrate W for deposition of a thin film.

Some of the source gas injected into the substrate W may be adsorbed on the surface of the substrate W, and others may not be adsorbed. The non-adsorbed source gas may be layered on the adsorbed source gas or may float within the process chamber 100.

After the source gas is injected into the substrate W, the source gas may be purged from the process chamber 100. The step of purging the source gas in the process chamber 100 may include discharging the source gas that is not adsorbed on the surface of the substrate W from the process chamber 100 . That is, when the source gas is purged from the process chamber 100, only the source gas adsorbed on the substrate W remains, and the source gas layered on the adsorbed source gas or floating in the process chamber 100 is stored in the process chamber 100. ) can be discharged to the outside. Accordingly, one source gas layer may be formed on the surface of the substrate W.

A reaction gas may be injected into the process chamber 100. The reaction gas may be sprayed onto the surface of the substrate W through the showerhead 500. The reaction gas may react with the source gas adsorbed on the substrate W to form a thin film. In order to improve the reactivity between the reaction gas and the source gas, the reaction gas may be injected into the process chamber 100 and RF power may be applied to the process chamber 100 to convert the reaction gas into plasma. The source gas may be converted to plasma by RF power.

A thin film can be formed with high reaction efficiency by reacting the source gas and the reaction gas in a plasma state.

Reactive gases may be purged from the process chamber 100 after RF power is applied. That is, RF power is applied for a certain period of time to convert the reaction gas into plasma, and when the time has elapsed, the supply of RF power is stopped, and then the reaction gas can be purged.

Purging the reaction gas in the process chamber 100 includes discharging the reaction gas and plasma that are not used to form a thin film on the surface of the substrate W from the process chamber 100 .

RF power may be applied to convert the source gas and reaction gas into plasma. Meanwhile, if RF power is applied while the source gas and reaction gas are not normally supplied, plasma conversion may not be performed and the process itself may be stopped. The pressure is controlled by the pressure regulator 700 and the process gas is supplied to the process chamber 100. However, if the amount of process gas flowing into the pressure regulator 700 is not sufficient, the process gas is supplied to the process chamber 100. Because the density of the process gas is low, plasma conversion cannot be performed.

The control unit 600 of the substrate processing apparatus 10 according to an embodiment of the present invention may control the power supply unit 800 with reference to the flow rate of the process gas injected into the process chamber 100. Specifically, the control unit 600 may control the power supply unit 800 so that RF power is supplied after the flow rate of the process gas injected into the process chamber 100 is uniform. Accordingly, interruption of the process due to non-conversion of plasma is prevented, and continuous process processing can be performed.

FIG. 4 is a diagram showing that the amount of change in the flow rate of the process gas exceeds the critical change amount (TH_FLUC).

Referring to FIG. 4, the control unit 600 determines a preset threshold change time (tf) when the change in flow rate of the process gas injected into the process chamber 100 exceeds the preset threshold change amount (TH_FLUC). If it elapses, the power supply unit 800 can be controlled so that RF power is not supplied.

FIG. 4 shows a graph showing the amount of change in the flow rate of the process gas (hereinafter referred to as the amount of change in flow rate). In the present invention, the amount of change in flow rate may be the standard deviation of the flow rate. In other words, the size of the flow rate at the current time relative to the average of the flow rate formed over a certain time period may be the flow rate change. However, in the present invention, the flow rate change amount is the standard deviation of the flow rate as an example, and the flow rate change amount can be calculated in various ways that can indicate the degree of change in the flow rate. Hereinafter, the explanation will focus on the standard deviation of flow rate, which is the amount of change in flow rate.

The flow rate change exceeds the critical change amount (TH_FLUC) at time t1, and may remain in a state exceeding the critical change amount (TH_FLUC) thereafter. If RF power is supplied before time t1, the control unit 600 can continuously check whether the duration for which the flow rate change exceeds the threshold change amount (TH_FLUC) elapses the critical change time (tf) based on time t1. . Thus, the control unit 600 may control the power supply unit 800 so that RF power is not supplied at time t2 when the threshold change time (tf) has elapsed based on time t1. The power supply unit 800 may stop supplying RF power under the control of the control unit 600.

Meanwhile, if the duration for which the flow rate change exceeds the threshold change amount (TH_FLUC) based on time t1 has not elapsed the critical change time (tf), the control unit 600 operates the power supply unit 800 to continuously supply RF power. You can control it.

Figure 5 is a diagram showing that the amount of change in the flow rate of the process gas is converted to below the critical stable amount.

Referring to FIG. 5, the controller 600 sets a preset critical stabilization time (ts) during which the amount of change in the flow rate of the process gas injected into the process chamber 100 is less than or equal to the preset critical stable amount (TH_STBL). When elapsed, the power supply unit 800 can be controlled so that RF power is supplied.

Figure 5 shows a graph showing the amount of change in flow rate. The flow rate change is converted to below the critical stable amount (TH_STBL) at time t1, and may remain below the critical stable amount (TH_STBL) thereafter. If the supply of RF power is interrupted before time t1, the control unit 600 continuously checks whether the duration for which the flow rate change exceeds the critical stability amount (TH_STBL) elapses the critical stabilization time (ts) based on time t1. You can. Thus, the control unit 600 can control the power supply unit 800 so that RF power is supplied at time t2, when the critical stabilization time (ts) has elapsed based on time t1. The power supply unit 800 may start supplying RF power under the control of the control unit 600.

On the other hand, if the duration for which the flow rate change exceeds the critical stabilization amount (TH_STBL) based on time t1 has not elapsed the critical stabilization time (ts), the control unit 600 continuously stops the supply of RF power to the power supply unit ( 800) can be controlled.

The threshold change amount (TH_FLUC) may be set to be greater than or equal to the threshold stability amount (TH_STBL). Preferably, the threshold change amount (TH_FLUC) may be set larger than the threshold stability amount (TH_STBL). If the flow rate change is formed between the critical change amount (TH_FLUC) and the critical stable amount (TH_STBL), the supply or interruption of RF power can be maintained, and the flow rate change is within the range of the critical change amount (TH_FLUC) and the critical stable amount (TH_STBL). In case of deviation, switching of RF power may be performed.

The critical change time (tf) may be set to be smaller than or equal to the critical stability time (ts). Preferably, the critical change time (tf) may be set to be smaller than the critical stability time (ts). If the flow rate change exceeds the critical change amount (TH_FLUC), the supply of RF power is stopped relatively quickly, and if the flow rate change amount is below the critical stable amount (TH_STBL), the process gas supply is sufficient. After waiting, supply of RF power may be started.

Figure 6 is a diagram for explaining the relationship between the flow rate of process gas and power supply.

Referring to FIG. 6, the control unit 600 may control the supply of RF power with reference to the flow rate of the process gas.

In FIG. 6, (a) is a graph showing the flow rate of process gas, and (b) is a graph showing the supply of RF power.

Initially, when the process gas flows into the process chamber 100, the flow rate may be unstable. The flow rate is stably introduced from time t1, and this state can be maintained. In this case, the supply of RF power may begin at time t2, when the critical stabilization time (ts) has elapsed from time t1.

While RF power is being supplied, the flow rate may become unstable at time t3. The supply of RF power may be stopped at time t4, when the threshold change time (tf) has elapsed from time t3. And, from time t5, the flow rate is stably introduced again, and this state can be maintained. In this case, the supply of RF power may begin at time t6, when the critical stabilization time (ts) has elapsed from time t5.

In this way, the control unit 600 may control whether RF power is supplied by referring to not only the change in flow rate but also whether the flow rate is stably supplied.

FIG. 7 is a diagram illustrating the relationship between the change in flow rate of process gas and power supply.

Referring to FIG. 7, the control unit 600 may control the supply of RF power by referring to the change in flow rate of the process gas.

In FIG. 7, (a) is a graph showing the flow rate of the process gas, (b) is a graph showing the change in the flow rate of the process gas, and (c) is a graph showing the supply of RF power.

Initially, when the process gas flows into the process chamber 100, the flow rate may be unstable and the flow rate change may be relatively large. From time t1, the flow rate change is converted to less than the critical stable amount (TH_STBL), and this state can be maintained. In this case, the supply of RF power may begin at time t2, when the critical stabilization time (ts) has elapsed from time t1.

While RF power is being supplied, the flow rate becomes unstable at time t3, and the flow rate change amount may exceed the threshold change amount (TH_FLUC). In this case, the supply of RF power may be stopped at time t4, when the threshold change time (tf) has elapsed from time t3. And, from time t5, the flow rate is stably introduced again, and the flow rate change amount can be converted to below the critical stable amount (TH_STBL). In this case, the supply of RF power may begin at time t6, when the critical stabilization time (ts) has elapsed from time t5.

Figure 8 is a flowchart of a substrate processing method according to an embodiment of the present invention.

Referring to FIG. 8, in order to determine whether to supply RF power, the control unit 600 may first receive the flow rate of the process gas injected into the process chamber 100 where the process for the substrate W is performed (S910) ).

The flow rate of the process gas may be received from the pressure regulator 700. The pressure regulator 700 may measure the flow rate of the process gas supplied to the process gas inlet pipe 230 using a flow meter and transmit the measured flow rate to the control unit 600. The control unit 600 can receive the flow rate measured by the flow meter in real time.

The controller 600 may control the supply of RF power for generating plasma to the process chamber 100 by referring to the flow rate of the process gas injected into the process chamber 100 . To this end, the control unit 600 may determine the uniformity of the flow rate of the process gas injected into the process chamber 100 (S920). For example, the control unit 600 checks whether the duration for which the change in flow rate exceeds the critical change amount elapses the critical change time, or whether the duration for which the change in flow rate is less than the critical stable amount elapses the critical stabilization time. You can check whether or not.

Additionally, the control unit 600 may determine whether to supply RF power to the process chamber 100 by referring to the uniformity of the flow rate of the process gas. Specifically, when it is determined that the flow rate is uniform, the control unit 600 may control the power supply unit 800 to supply RF power to the process chamber 100. Meanwhile, if it is determined that the flow rate is not uniform, the control unit 600 may control the power supply unit 800 so that RF power is not supplied to the process chamber 100.

Under the control of the control unit 600, the power supply unit 800 may supply RF power to the process chamber 100 (S930) or may stop supplying RF power (S940).

In this way, the control unit 600 of the substrate processing apparatus 10 according to an embodiment of the present invention may determine whether to supply RF power by referring to the flow rate of the process gas or the change in flow rate. As RF power is supplied after the process gas is stably supplied to the process chamber 100, plasma conversion is performed normally, and process interruption due to non-conversion of plasma can be prevented.

Although embodiments of the present invention have been described with reference to the above and the attached drawings, those skilled in the art will understand that the present invention can be implemented in other specific forms without changing the technical idea or essential features. You will understand that it exists. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive.

10: substrate processing device 100: process chamber
200: Cover 300: Substrate support
400: Elevating unit 500: Shower head
600: Control unit 700: Pressure control unit
800: Power supply unit

Claims (8)

A process chamber that provides a processing space for processing a substrate;
a power supply unit that supplies RF power for generating plasma to the process chamber; and
A control unit that controls the power supply unit with reference to the flow rate of the process gas injected into the process chamber,
The control unit controls the power supply unit to supply the RF power after the flow rate of the process gas injected into the process chamber is uniform. According to claim 1,
The control unit controls the power supply unit so that the RF power is not supplied when the change in flow rate of the process gas injected into the process chamber exceeds a preset threshold change amount and the duration time elapses a preset threshold change time. Substrate processing equipment. According to clause 2,
The control unit controls the power supply unit to supply the RF power when the change in flow rate of the process gas injected into the process chamber is less than or equal to a preset critical stabilization amount and the duration of time elapses a preset critical stabilization time. processing unit. According to clause 3,
A substrate processing device wherein the critical change amount is set to be greater than or equal to the critical stable amount. According to clause 3,
A substrate processing device wherein the critical change time is set to be smaller than or equal to the critical stabilization time. According to clause 3,
A substrate processing device wherein the amount of change in the flow rate includes a standard deviation of the flow rate. According to claim 1,
A substrate processing device wherein the process gas includes a precursor. Receiving a flow rate of process gas injected into a process chamber where a process on a substrate is performed; and
Controlling the supply of RF power for generating plasma to the process chamber with reference to the flow rate of the process gas injected into the process chamber,
The step of controlling the supply of RF power is,
determining the uniformity of the flow rate of the process gas injected into the process chamber; and
A substrate processing method comprising determining whether to supply the RF power to the process chamber with reference to the uniformity of the flow rate of the process gas.

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