KR20240013057A - 검출 장치, 리소그래피 장치 및 물품 제조 방법 - Google Patents
검출 장치, 리소그래피 장치 및 물품 제조 방법 Download PDFInfo
- Publication number
- KR20240013057A KR20240013057A KR1020230092815A KR20230092815A KR20240013057A KR 20240013057 A KR20240013057 A KR 20240013057A KR 1020230092815 A KR1020230092815 A KR 1020230092815A KR 20230092815 A KR20230092815 A KR 20230092815A KR 20240013057 A KR20240013057 A KR 20240013057A
- Authority
- KR
- South Korea
- Prior art keywords
- light
- mark
- substrate
- illumination
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022116575A JP2024014031A (ja) | 2022-07-21 | 2022-07-21 | 検出装置、リソグラフィー装置および物品製造方法 |
| JPJP-P-2022-116575 | 2022-07-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240013057A true KR20240013057A (ko) | 2024-01-30 |
Family
ID=89577335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020230092815A Pending KR20240013057A (ko) | 2022-07-21 | 2023-07-18 | 검출 장치, 리소그래피 장치 및 물품 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12596310B2 (https=) |
| JP (1) | JP2024014031A (https=) |
| KR (1) | KR20240013057A (https=) |
| TW (1) | TW202419984A (https=) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7292326B2 (en) | 2004-11-30 | 2007-11-06 | Molecular Imprints, Inc. | Interferometric analysis for the manufacture of nano-scale devices |
| US7630067B2 (en) | 2004-11-30 | 2009-12-08 | Molecular Imprints, Inc. | Interferometric analysis method for the manufacture of nano-scale devices |
| JP5909210B2 (ja) * | 2013-07-11 | 2016-04-26 | キヤノン株式会社 | インプリント装置及び物品の製造方法 |
| JP6570914B2 (ja) * | 2015-08-03 | 2019-09-04 | 東芝メモリ株式会社 | インプリント方法 |
| EP3467591A4 (en) | 2016-05-31 | 2020-02-12 | Nikon Corporation | BRAND DETECTION APPARATUS, BRAND DETECTION METHOD, MEASURING APPARATUS, EXPOSURE APPARATUS, EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD |
| JP6971567B2 (ja) | 2016-12-16 | 2021-11-24 | キヤノン株式会社 | 位置合わせ装置、位置合わせ方法、リソグラフィ装置、および物品製造方法 |
| NL2021357A (en) | 2018-01-31 | 2018-08-16 | Asml Netherlands Bv | Two-dimensional diffraction grating |
| KR20250133998A (ko) | 2020-04-06 | 2025-09-09 | 가부시키가이샤 니콘 | 패턴 형성 장치 및 패턴 형성 방법 |
| JP7500258B2 (ja) | 2020-04-10 | 2024-06-17 | キヤノン株式会社 | 検出装置、リソグラフィ装置、物品の製造方法、及び検出方法 |
| JP7510280B2 (ja) | 2020-06-02 | 2024-07-03 | キヤノン株式会社 | 検出器、インプリント装置および物品製造方法 |
| JP2024014030A (ja) * | 2022-07-21 | 2024-02-01 | キヤノン株式会社 | 検出装置、リソグラフィー装置および物品製造方法 |
-
2022
- 2022-07-21 JP JP2022116575A patent/JP2024014031A/ja active Pending
-
2023
- 2023-07-03 US US18/346,296 patent/US12596310B2/en active Active
- 2023-07-05 TW TW112125082A patent/TW202419984A/zh unknown
- 2023-07-18 KR KR1020230092815A patent/KR20240013057A/ko active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US12596310B2 (en) | 2026-04-07 |
| JP2024014031A (ja) | 2024-02-01 |
| TW202419984A (zh) | 2024-05-16 |
| US20240027926A1 (en) | 2024-01-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
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| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
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| D21 | Rejection of application intended |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| E13 | Pre-grant limitation requested |
Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
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| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
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| P11 | Amendment of application requested |
Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
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| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |