KR20230165243A - 레이저 빔 시스템에서 계측을 수행하기 위한 미러, 레이저 빔 시스템, euv 방사선 소스 및 리소그래피 장치 - Google Patents
레이저 빔 시스템에서 계측을 수행하기 위한 미러, 레이저 빔 시스템, euv 방사선 소스 및 리소그래피 장치 Download PDFInfo
- Publication number
- KR20230165243A KR20230165243A KR1020237034061A KR20237034061A KR20230165243A KR 20230165243 A KR20230165243 A KR 20230165243A KR 1020237034061 A KR1020237034061 A KR 1020237034061A KR 20237034061 A KR20237034061 A KR 20237034061A KR 20230165243 A KR20230165243 A KR 20230165243A
- Authority
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- South Korea
- Prior art keywords
- layer
- mirror
- laser beam
- metrology
- grid
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims description 61
- 239000010410 layer Substances 0.000 claims description 203
- 238000005259 measurement Methods 0.000 claims description 92
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- 230000003287 optical effect Effects 0.000 description 11
- 238000000059 patterning Methods 0.000 description 7
- 229910052718 tin Inorganic materials 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 239000000446 fuel Substances 0.000 description 6
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
- G02B5/0875—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising two or more metallic layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0071—Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Optical Elements Other Than Lenses (AREA)
- Electromagnetism (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP21167393 | 2021-04-08 | ||
| EP21167393.4 | 2021-04-08 | ||
| EP21169691.9A EP4080286A1 (en) | 2021-04-21 | 2021-04-21 | Mirror for performing metrology in a laser beam system, laser beam system, euv radiation source and lithographic apparatus |
| EP21169691.9 | 2021-04-21 | ||
| PCT/EP2022/056868 WO2022214288A1 (en) | 2021-04-08 | 2022-03-16 | Mirror for performing metrology in a laser beam system, laser beam system, euv radiation source and lithographic apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20230165243A true KR20230165243A (ko) | 2023-12-05 |
Family
ID=80820271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237034061A KR20230165243A (ko) | 2021-04-08 | 2022-03-16 | 레이저 빔 시스템에서 계측을 수행하기 위한 미러, 레이저 빔 시스템, euv 방사선 소스 및 리소그래피 장치 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20230165243A (zh) |
| TW (1) | TW202303293A (zh) |
| WO (1) | WO2022214288A1 (zh) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3939706A (en) * | 1974-04-10 | 1976-02-24 | The Boeing Company | High energy sensor |
| US4692623A (en) * | 1986-02-13 | 1987-09-08 | The United States Of America As Represented By The Secretary Of The Army | Precision laser beam positioner and spatially resolved laser beam sampling meter |
| EP0463982B1 (fr) * | 1990-06-26 | 1995-04-19 | Electricite De Strasbourg, S.A. | Dispositif d'analyse en mode continu et en mode impulsionnel de la répartition d'énergie au sein d'un faisceau laser de puissance et de l'alignement de ce dernier |
| WO2019162038A1 (en) * | 2018-02-20 | 2019-08-29 | Asml Netherlands B.V. | Sensor system |
-
2022
- 2022-03-16 KR KR1020237034061A patent/KR20230165243A/ko unknown
- 2022-03-16 WO PCT/EP2022/056868 patent/WO2022214288A1/en active Application Filing
- 2022-04-06 TW TW111112962A patent/TW202303293A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW202303293A (zh) | 2023-01-16 |
| WO2022214288A1 (en) | 2022-10-13 |
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