KR20230163297A - Method of processing wafer and support table - Google Patents

Method of processing wafer and support table Download PDF

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Publication number
KR20230163297A
KR20230163297A KR1020230062752A KR20230062752A KR20230163297A KR 20230163297 A KR20230163297 A KR 20230163297A KR 1020230062752 A KR1020230062752 A KR 1020230062752A KR 20230062752 A KR20230062752 A KR 20230062752A KR 20230163297 A KR20230163297 A KR 20230163297A
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South Korea
Prior art keywords
wafer
protective tape
support
area
support table
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KR1020230062752A
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Korean (ko)
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마키코 오마에
마키코 오마에
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가부시기가이샤 디스코
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Publication of KR20230163297A publication Critical patent/KR20230163297A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B24B41/061—Work supports, e.g. adjustable steadies axially supporting turning workpieces, e.g. magnetically, pneumatically
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)

Abstract

(과제)
보호 테이프를 박리할 때에 웨이퍼가 파손되어 버린다는 문제를 해소할 수 있는 웨이퍼의 처리 방법을 제공한다.
(해결 과제)
복수의 디바이스가 형성된 디바이스 영역과, 그 디바이스 영역을 둘러싸는 외주 잉여 영역을 표면에 갖는 웨이퍼의 처리 방법으로서, 웨이퍼의 표면에 보호 테이프를 배치하는 보호 테이프 배치 공정과, 보호 테이프 측을 척 테이블에 유지하고 웨이퍼의 이면을 연삭하여 디바이스 영역에 대응하는 영역에 오목부를 형성함과 함께 외주 잉여 영역에 대응하는 영역에 볼록 형상의 링을 형성하는 이면 연삭 공정과, 웨이퍼의 표면으로부터 보호 테이프를 박리하는 보호 테이프 박리 공정을 적어도 구비하고, 상기 보호 테이프 박리 공정에 있어서, 웨이퍼의 이면에 형성된 오목부를 지지하는 지지 테이블을 사용한다.(assignment)
A wafer processing method that can solve the problem of wafer damage when peeling off a protective tape is provided.
(challenge to solve)
A method of processing a wafer having on its surface a device area where a plurality of devices are formed and an outer peripheral surplus area surrounding the device area, comprising: a protective tape placement step of placing a protective tape on the surface of the wafer; and placing the protective tape side on a chuck table. A back side grinding process of holding and grinding the back side of the wafer to form a concave portion in the area corresponding to the device area and forming a convex-shaped ring in the area corresponding to the outer surplus area, and peeling the protective tape from the surface of the wafer. At least a protective tape peeling step is provided, and in the protective tape peeling step, a support table is used to support a concave portion formed on the back side of the wafer.

Description

웨이퍼의 처리 방법 및 지지 테이블{METHOD OF PROCESSING WAFER AND SUPPORT TABLE} Wafer processing method and support table {METHOD OF PROCESSING WAFER AND SUPPORT TABLE}

본 발명은, 복수의 디바이스가 형성된 디바이스 영역과, 그 디바이스 영역을 둘러싸는 외주 잉여 영역을 표면에 갖는 웨이퍼의 처리 방법 및 그 웨이퍼의 처리 방법에 사용하는 지지 테이블에 관한 것이다.The present invention relates to a wafer processing method having on the surface a device region on which a plurality of devices are formed and an outer peripheral surplus region surrounding the device region, and a support table used in the wafer processing method.

IC, LSI 등의 복수의 디바이스가 분할 예정 라인에 의해 구획된 디바이스 영역과, 상기 디바이스 영역을 둘러싸는 외주 잉여 영역이 표면에 형성된 웨이퍼는, 연삭 장치에 의해 이면이 연삭되어 원하는 두께로 형성된 후, 다이싱 장치에 의해 개개의 디바이스 칩으로 분할되어, 휴대 전화, 퍼스널 컴퓨터 등의 전기 기기에 이용된다.A wafer having a device area in which a plurality of devices such as ICs, LSIs, etc. are divided by division lines, and an outer peripheral surplus area surrounding the device area are formed on the surface, and the back surface is ground by a grinding device to form a desired thickness. It is divided into individual device chips by a dicing device and used in electrical devices such as mobile phones and personal computers.

또한, 웨이퍼의 이면을 연삭하는 방법으로서, 얇아진 웨이퍼의 반송, 이면 가공 시에 있어서 웨이퍼가 파손되지 않도록, 디바이스 영역에 대응하는 이면 영역을 연삭하여 원하는 두께로 형성함과 함께, 외주 잉여 영역에 대응하는 이면 영역에 볼록 형상의 링을 보강부로서 형성하는 기술이 본 출원인에 의해 제안되어 있다(특허문헌 1을 참조).In addition, as a method of grinding the back surface of a wafer, the back surface area corresponding to the device area is ground to a desired thickness to prevent the wafer from being damaged during transportation and back surface processing of the thinned wafer, and the outer surface area corresponds to the outer surplus area. The present applicant has proposed a technique of forming a convex-shaped ring as a reinforcement portion in the rear surface area (see Patent Document 1).

특허문헌 1: 일본 공개특허공보 2007-019461호Patent Document 1: Japanese Patent Publication No. 2007-019461

상기한 특허문헌 1에 기재된 기술에 있어서 웨이퍼의 이면을 연삭 가공하는 경우, 웨이퍼의 표면에 형성된 디바이스를 보호하기 위해 보호 테이프가 부설된다. 그리고, 웨이퍼의 이면 측의 디바이스 영역에 대응하는 영역을 연삭 가공에 의해 박화한 후, 상기 이면 측에 금속막을 피복하는 등의 이면 가공이 실시될 때에, 상기 이면 가공에 있어서 열 가공을 수반하는 처리가 있는 관계로부터, 웨이퍼의 표면으로부터 보호 테이프를 박리할 필요가 발생한다.In the technology described in Patent Document 1 described above, when grinding the back side of a wafer, a protective tape is placed to protect the device formed on the surface of the wafer. Then, after the area corresponding to the device area on the back side of the wafer is thinned by grinding, when back side processing such as coating the back side with a metal film is performed, the back side processing involves thermal processing. Because of this relationship, it becomes necessary to peel the protective tape from the surface of the wafer.

그러나, 상기한 바와 같이, 웨이퍼의 디바이스 영역에 대응하는 영역은 연삭에 의해 박화되어 있고, 외주 잉여 영역에 대응하는 이면 영역에 볼록 형상의 링이 보강부로서 형성되어 있었다고 해도, 보호 테이프를 박리할 때에 웨이퍼의 디바이스 영역이 파손되어 버린다는 문제가 발생한다.However, as described above, even if the area corresponding to the device area of the wafer is thinned by grinding and a convex-shaped ring is formed as a reinforcement portion in the back surface area corresponding to the outer peripheral surplus area, the protective tape cannot be peeled off. A problem arises in that the device area of the wafer is damaged.

본 발명은, 상기 사실을 감안하여 이루어진 것으로, 그 주된 기술 과제는, 보호 테이프를 박리할 때에 웨이퍼가 파손되어 버린다는 문제를 해소할 수 있는 웨이퍼의 처리 방법 및 그 웨이퍼의 처리 방법에 사용하는 지지 테이블을 제공하는 것에 있다.The present invention was made in consideration of the above facts, and its main technical problem is to provide a wafer processing method that can solve the problem of the wafer being damaged when peeling off the protective tape, and a support used in the wafer processing method. It's about providing a table.

상기 주된 기술 과제를 해결하기 위해, 본 발명에 의하면, 복수의 디바이스가 형성된 디바이스 영역과, 그 디바이스 영역을 둘러싸는 외주 잉여 영역을 표면에 갖는 웨이퍼의 처리 방법으로서, 웨이퍼의 표면에 보호 테이프를 배치하는 보호 테이프 배치 공정과, 보호 테이프 측을 척 테이블에 유지하고 웨이퍼의 이면을 연삭하여 디바이스 영역에 대응하는 영역에 오목부를 형성함과 함께 외주 잉여 영역에 대응하는 영역에 볼록 형상의 링을 형성하는 이면 연삭 공정과, 웨이퍼의 표면으로부터 보호 테이프를 박리하는 보호 테이프 박리 공정을 적어도 포함하고, 상기 보호 테이프 박리 공정에 있어서, 웨이퍼의 이면에 형성된 오목부를 지지하는 지지 테이블을 사용하는, 웨이퍼의 처리 방법이 제공된다.In order to solve the above main technical problem, according to the present invention, there is provided a method of processing a wafer having on its surface a device region in which a plurality of devices are formed and an outer peripheral surplus region surrounding the device region, wherein a protective tape is disposed on the surface of the wafer. A protective tape placement process, holding the protective tape side on a chuck table and grinding the back side of the wafer to form a concave portion in the area corresponding to the device area and to form a convex-shaped ring in the area corresponding to the outer surplus area. A wafer processing method comprising at least a back surface grinding process and a protective tape peeling process for peeling the protective tape from the surface of the wafer, wherein, in the protective tape peeling process, a support table is used to support a concave portion formed on the back surface of the wafer. This is provided.

또한, 본 발명에 의하면, 상기한 웨이퍼의 처리 방법에 사용하는 지지 테이블로서, 웨이퍼의 이면에 형성된 오목부에 대응하는 크기의 지지부와, 웨이퍼의 이면에 형성된 볼록 형상의 링에 대응하여 상기 지지부의 외주에 형성된 단차부로 구성되는, 지지 테이블이 제공된다.Additionally, according to the present invention, a support table used in the above-described wafer processing method includes a support portion having a size corresponding to a concave portion formed on the back surface of the wafer, and a support portion corresponding to a convex-shaped ring formed on the back surface of the wafer. A support table is provided, which consists of a step portion formed on the outer periphery.

상기 지지부의 상면에 수지가 부설되는 것이 바람직하다. 또한, 상기 지지부에는, 웨이퍼의 오목부를 흡인 유지하는 흡인부가 형성되는 것이 바람직하다.It is preferable that resin is laid on the upper surface of the support part. Additionally, it is preferable that a suction portion for suction-holding the concave portion of the wafer is formed in the support portion.

본 발명의 웨이퍼의 처리 방법은, 복수의 디바이스가 형성된 디바이스 영역과, 상기 디바이스 영역을 둘러싸는 외주 잉여 영역을 표면에 갖는 웨이퍼의 처리 방법으로서, 웨이퍼의 표면에 보호 테이프를 배치하는 보호 테이프 배치 공정과, 보호 테이프 측을 척 테이블에 유지하고 웨이퍼의 이면을 연삭하여 디바이스 영역에 대응하는 영역에 오목부를 형성함과 함께 외주 잉여 영역에 대응하는 영역에 볼록 형상의 링을 형성하는 이면 연삭 공정과, 웨이퍼의 표면으로부터 보호 테이프를 박리하는 보호 테이프 박리 공정을 적어도 구비하고, 상기 보호 테이프 박리 공정에 있어서, 웨이퍼의 이면에 형성된 오목부를 지지하는 지지 테이블을 사용하기 때문에, 웨이퍼의 표면으로부터 보호 테이프를 박리할 때에, 디바이스 영역에 무리한 힘이 작용하는 것이 회피되어, 웨이퍼가 파손된다는 문제가 해소된다.The wafer processing method of the present invention is a wafer processing method having a device region on the surface of which a plurality of devices are formed and an outer peripheral surplus region surrounding the device region, and includes a protective tape placement step of disposing a protective tape on the surface of the wafer. and a back side grinding process of holding the protective tape side on a chuck table and grinding the back side of the wafer to form a concave portion in the area corresponding to the device area and to form a convex-shaped ring in the area corresponding to the outer peripheral surplus area; At least a protective tape peeling process is provided for peeling the protective tape from the surface of the wafer, and in the protective tape peeling process, a support table is used to support the concave portion formed on the back surface of the wafer, so that the protective tape is peeled from the surface of the wafer. When doing so, excessive force is avoided on the device area, and the problem of wafer damage is eliminated.

또한, 본 발명의 지지 테이블은, 웨이퍼의 이면에 형성된 오목부에 대응하는 크기의 지지부와, 웨이퍼의 이면에 형성된 볼록 형상의 링에 대응하여 상기 지지부의 외주에 형성된 단차부로 구성되어 있기 때문에, 웨이퍼의 표면으로부터 보호 테이프를 박리할 때에, 본 지지 테이블을 사용하는 것에 의해, 디바이스 영역에 무리한 힘이 작용하는 것이 회피되어, 웨이퍼가 파손된다고 하는 문제를 해소하는 것에 기여한다.In addition, the support table of the present invention is composed of a support portion of a size corresponding to a concave portion formed on the back of the wafer, and a step portion formed on the outer periphery of the support portion corresponding to a convex ring formed on the back of the wafer, so that the wafer When peeling the protective tape from the surface of the wafer, using this support table avoids excessive force being applied to the device area, contributing to solving the problem of the wafer being damaged.

도 1은, 본 실시 형태에 의해 가공되는 웨이퍼, 및 보호 시트의 사시도이다.
도 2(a)는, 연삭 장치에 의한 이면 연삭 공정의 실시 양태를 도시하는 사시도이고, 도 2(b)는, 이면 연삭 공정에 의해서 연삭된 웨이퍼의 확대 단면도이다.
도 3은, 지지 테이블에 웨이퍼를 유지하는 양태를 도시하는 사시도이다.
도 4는, 보호 테이프 박리 공정의 실시 양태를 도시하는 사시도이다.
도 5(a)는, 지지 테이블을 제작하는 가공의 실시 양태를 도시하는 사시도이고, 도 5(b)는, 지지 테이블의 지지부 상에 수지를 부설하는 양태를 도시하는 사시도이고, 도 5(c)는, 지지 테이블의 다른 실시 형태를 도시하는 사시도이다.
1 is a perspective view of a wafer and a protection sheet processed according to this embodiment.
FIG. 2(a) is a perspective view showing an implementation mode of a back side grinding process using a grinding device, and FIG. 2(b) is an enlarged cross-sectional view of a wafer ground by the back side grinding process.
Figure 3 is a perspective view showing a mode of holding a wafer on a support table.
Fig. 4 is a perspective view showing an implementation mode of the protective tape peeling process.
FIG. 5(a) is a perspective view showing an implementation mode of processing for manufacturing a support table, FIG. 5(b) is a perspective view showing a mode of laying resin on the support portion of the support table, and FIG. 5(c) ) is a perspective view showing another embodiment of the support table.

이하, 본 발명에 기초하여 구성되는 웨이퍼의 처리 방법 및 그 처리 방법에 사용되는 지지 테이블에 관련된 실시 형태에 대해, 첨부 도면을 참조하면서, 상세하게 설명한다.Hereinafter, embodiments related to a wafer processing method constructed based on the present invention and a support table used in the processing method will be described in detail with reference to the accompanying drawings.

도 1에는, 본 실시 형태에 있어서 피가공물이 되는 웨이퍼(10) 및 웨이퍼(10)의 표면(10a)에 배치되는 보호 테이프(T1)가 도시되어 있다. 본 실시 형태의 웨이퍼(10)는, 100mm의 직경, 700㎛의 두께를 갖는 실리콘(Si)으로 이루어진 반도체 기판을 포함하고, 그 반도체 기판의 표면(10a) 측에 복수의 디바이스(12)가 분할 예정 라인(13)에 의해 구획된 디바이스 영역(11a)과, 디바이스 영역(11a)을 둘러싸는 외주 잉여 영역(11b)을 구비하고 있다. 웨이퍼(10)의 표면(10a)에는, 디바이스 영역(11a)과 외주 잉여 영역(11b)을 구분하는 2점 쇄선(11)이 나타나고 있지만, 2점 쇄선(11)은 설명의 편의 상 붙인 가상선이며, 실제의 웨이퍼(10)의 표면(10a)에 배치되어 있는 것은 아니다. 상기한 웨이퍼(10)를 준비했다면, 도 1의 상단에 도시하는 바와 같이, 웨이퍼(10)의 표면(10a) 측에, 보호 테이프(T1)를 부착하여 일체화하는 보호 테이프 배치 공정을 실시한다. 계속해서, 보호 테이프(T1)와 일체화된 웨이퍼(10)를 반전하여, 도 1의 하단에 도시하는 바와 같이, 웨이퍼(10)의 이면(10b)이 위쪽으로 노출된 상태로 한다.FIG. 1 shows a wafer 10 that is to be processed in this embodiment and a protective tape T1 disposed on the surface 10a of the wafer 10. The wafer 10 of this embodiment includes a semiconductor substrate made of silicon (Si) with a diameter of 100 mm and a thickness of 700 μm, and a plurality of devices 12 are divided on the surface 10a of the semiconductor substrate. It is provided with a device area 11a defined by a predetermined line 13 and an outer surplus area 11b surrounding the device area 11a. On the surface 10a of the wafer 10, a two-dot chain line 11 dividing the device area 11a and the outer peripheral area 11b appears. However, the two-dot chain line 11 is an imaginary line added for convenience of explanation. , and is not actually disposed on the surface 10a of the wafer 10. Once the wafer 10 described above has been prepared, a protective tape placement process is performed to attach and integrate the protective tape T1 to the surface 10a side of the wafer 10, as shown in the upper part of FIG. 1. Subsequently, the wafer 10 integrated with the protective tape T1 is reversed so that the back surface 10b of the wafer 10 is exposed upward, as shown at the bottom of FIG. 1 .

계속해서, 예를 들어, 도 2에 도시하는 연삭 장치(2)(일부만 도시함)를 이용하여 이면(10b)을 연삭한다. 이 연삭 장치(2)는, 웨이퍼(10)를 유지하여 회전 가능한 척 테이블(20)과, 웨이퍼(10)에 대하여 연삭 가공을 실시하는 연삭 수단(21)을 구비하고 있다. 연삭 수단(21)에는, 회전 가능하고 또한 승강 가능한 스핀들(22)과, 스핀들(22)의 선단에 장착되어 스핀들(22)의 회전에 따라 회전하는 연삭 휠(23)과, 연삭 휠(23)의 하면에 환형으로 고착된 연삭 지석(24)을 구비하고 있다.Subsequently, the back surface 10b is ground, for example, using the grinding device 2 shown in FIG. 2 (only a portion is shown). This grinding device 2 includes a chuck table 20 that holds the wafer 10 and can rotate, and grinding means 21 that performs grinding processing on the wafer 10. The grinding means 21 includes a spindle 22 that can rotate and move up and down, a grinding wheel 23 mounted on the tip of the spindle 22 and rotating according to the rotation of the spindle 22, and a grinding wheel 23. It is provided with a grinding wheel 24 fixed in an annular shape to the lower surface.

척 테이블(20) 상에는, 웨이퍼(10)의 보호 부재(T1) 측이 유지되고, 웨이퍼(10)의 이면(10b)이 연삭 지석(24)과 대향한 상태가 된다. 그리고, 스핀들(22)을 화살표(R1)로 나타내는 방향으로 회전시킴과 함께, 스핀들(22)과 함께 회전되는 연삭 휠(23)을 화살표(R2)로 나타내는 방향으로 하강시킨다. 이 때, 척 테이블(20)을 화살표(R3)로 나타내는 방향으로 회전시켜 두고, 연삭 지석(24)을 웨이퍼(10)의 이면(10b)에 접촉시킨다. 연삭 지석(24)은, 이면(10b) 중 표면(10a)의 디바이스 영역(11b)에 대응하는 이면 영역에 접촉되고, 그 이외의 부분, 즉 외주 잉여 영역(11a)에 대응하는 영역은 연삭하지 않도록 설정되어 있다. 이에 의해, 도 2(b), 도 3의 상단에 도시하는 바와 같이, 연삭된 디바이스 영역(11b)에 대응하는 이면(10b)의 중앙 영역에 오목부(14)가 형성되고, 그 외주 측의 상기 외주 잉여 영역(11a)에 대응하는 영역에 상기 오목부(14)의 바닥면과의 사이에서 단차를 갖는 볼록 형상의 링(15)이 형성된다. 이상과 같이 하여 이면 연삭 공정이 실시된 결과, 링(15)에는 가공 전의 웨이퍼(10)의 두께(700㎛)가 그대로 잔존되고, 오목부(14)의 두께는, 예를 들어, 30㎛ 정도까지 얇게 된다. 또한, 도 2(b)에 도시하는 단면의 치수는, 실제의 치수비에 기초하여 기재한 것은 아니다.On the chuck table 20 , the protection member T1 side of the wafer 10 is held, and the back surface 10b of the wafer 10 faces the grinding wheel 24 . Then, the spindle 22 is rotated in the direction indicated by arrow R1, and the grinding wheel 23 rotated together with the spindle 22 is lowered in the direction indicated by arrow R2. At this time, the chuck table 20 is rotated in the direction indicated by arrow R3, and the grinding wheel 24 is brought into contact with the back surface 10b of the wafer 10. The grinding wheel 24 contacts the back surface area of the back surface 10b corresponding to the device area 11b of the surface 10a, and does not grind the other part, that is, the area corresponding to the outer peripheral surplus area 11a. It is set not to do so. As a result, as shown in the upper part of Fig. 2(b) and Fig. 3, a concave portion 14 is formed in the central area of the back surface 10b corresponding to the ground device area 11b, and the concave portion 14 is formed on the outer peripheral side thereof. A convex-shaped ring 15 having a step between the bottom surface of the concave portion 14 and the area corresponding to the outer peripheral surplus area 11a is formed. As a result of carrying out the back side grinding process as described above, the thickness (700 μm) of the wafer 10 before processing remains in the ring 15, and the thickness of the concave portion 14 is, for example, about 30 μm. becomes thin until In addition, the dimensions of the cross section shown in Fig. 2(b) are not described based on the actual dimension ratio.

상기 이면 연삭 공정을 실시하였다면, 후술하는 보호 테이프 박리 공정을 실시할 때에 사용하는 도 3의 하단에 도시하는 바와 같은 지지 테이블(30)을 준비한다. 본 실시 형태의 지지 테이블(30)은, 상기한 이면 연삭 공정에 의해 웨이퍼(10)의 이면(10b)에 형성된 오목부(14)에 대응하는 크기의 지지부(34)와, 웨이퍼(10)의 이면(10b)에 형성된 볼록 형상의 링(15)에 대응하여 지지부(34)의 외주에 형성된 단차부(32)로 구성되어 있다. 지지부(34)는, 상기한 오목부(14)와 대응하는 대략 원 형상을 이루고, 지지부(34)의 상면(34a)은 평탄하다. 지지부(34)의 직경(P)은, 해당 오목부(14)의 내경보다도 약간 작고, 바람직하게는 1∼2mm 정도 작은 치수로 형성되고, 단차부(32)의 표면(32a)에 대한 지지부(34)의 상면(34a)의 높이는, 해당 오목부(14)의 깊이와 동등하거나, 또는 해당 깊이의 치수보다도 큰 치수, 예를 들어, 50㎛ 정도 큰 치수로 형성된다.Once the above-described back side grinding process has been performed, a support table 30 as shown at the bottom of FIG. 3 to be used when performing the protective tape peeling process described later is prepared. The support table 30 of this embodiment includes a support portion 34 of a size corresponding to the concave portion 14 formed on the back surface 10b of the wafer 10 through the above-described back surface grinding process, and a support portion 34 of the wafer 10. It is composed of a step portion 32 formed on the outer periphery of the support portion 34 corresponding to the convex-shaped ring 15 formed on the back surface 10b. The support portion 34 has a substantially circular shape corresponding to the above-described concave portion 14, and the upper surface 34a of the support portion 34 is flat. The diameter P of the support portion 34 is slightly smaller than the inner diameter of the corresponding concave portion 14, and is preferably formed to be about 1 to 2 mm smaller, and the support portion ( The height of the upper surface 34a of 34) is equal to the depth of the concave portion 14, or is formed to be larger than the depth, for example, by about 50 μm.

상기한 지지 테이블(30)을 준비했다면, 도 3에 도시하는 바와 같이, 웨이퍼(10)를 반전시켜, 오목부(14)가 형성된 측을 아래쪽으로, 보호 테이프(T1)가 부착된 측을 위쪽으로 향하게 하여, 지지 테이블(30)의 지지부(34)에 상기한 오목부(14)를 위치시켜 재치한다. 상기한 바와 같이, 지지부(34)의 직경은, 오목부(14)의 치수보다 작게 설정되고, 또한, 단차부(32)의 표면(32a)에 대한 지지부(34)의 상면(34a)의 높이가, 오목부(14)의 깊이와 동등하거나, 또는 상기 깊이의 치수보다 큰 치수로 형성되어 있기 때문에, 상기 지지부(34)가, 웨이퍼(10)의 오목부(14)에 진입하여 오목부(14)의 바닥부가, 지지부(34)의 상면(34a)에 의해 지지된다.Once the above-described support table 30 has been prepared, as shown in FIG. 3, the wafer 10 is inverted, with the side on which the concave portion 14 is formed facing downward and the side on which the protective tape T1 is attached facing upward. The above-described concave portion 14 is positioned and placed on the support portion 34 of the support table 30. As described above, the diameter of the support portion 34 is set smaller than the dimension of the concave portion 14, and the height of the upper surface 34a of the support portion 34 relative to the surface 32a of the step portion 32 First, because it is formed to have a dimension equal to or greater than the depth of the concave portion 14, the support portion 34 enters the concave portion 14 of the wafer 10 and forms a concave portion ( The bottom portion of 14) is supported by the upper surface 34a of the support portion 34.

상기한 바와 같이, 웨이퍼(10)의 오목부(14)가 지지 테이블(30)의 지지부(34)에 의해 지지된 상태로 하였다면, 도 4에 도시하는 바와 같이, 오퍼레이터의 한쪽의 손(H1)으로 웨이퍼(10) 측을 누르고, 다른 쪽의 손(H2)에 의해 보호 테이프(T1)의 외주 단부(端部)를 잡고, 웨이퍼(10)의 표면(10a)으로부터 박리하는 보호 테이프 박리 공정을 실시한다. 또한, 도 4에는, 설명의 형편 상 오퍼레이터의 손에 의해 보호 테이프(T1)를 박리하는 순서를 도시하였지만, 본 발명의 보호 테이프 박리 공정은 반드시 오퍼레이터의 수작업에 의해 실시되는 것에 한정되지 않고, 자동화된 기계에 의해 실시되는 것이어도 된다.As described above, if the concave portion 14 of the wafer 10 is supported by the support portion 34 of the support table 30, as shown in FIG. 4, one hand H1 of the operator A protective tape peeling process is performed by pressing the wafer 10 side and holding the outer peripheral end of the protective tape T1 with the other hand H2 to peel it from the surface 10a of the wafer 10. Conduct. In addition, in Figure 4, for the sake of explanation, the procedure for peeling the protective tape T1 by the operator's hands is shown. However, the protective tape peeling process of the present invention is not necessarily limited to being performed manually by the operator, and can be automated. It may be carried out by a machine designed for use.

이상에 의해 본 실시 형태의 웨이퍼의 처리 방법이 완료된다. 상기한 실시 형태에 따르면, 웨이퍼(10)의 오목부(14)는, 지지 테이블(30)의 지지부(34)에 의해 아래쪽으로부터 지지된 디바이스 영역(11b)을 위쪽으로부터 누르면서 웨이퍼(10)의 표면(10a)으로부터 보호 테이프(T1)를 박리하게 되기 때문에, 디바이스 영역에 무리한 힘이 작용하는 것이 회피되어, 웨이퍼(10)가 파손된다고 하는 문제가 해소된다.With the above, the wafer processing method of this embodiment is completed. According to the above-described embodiment, the concave portion 14 of the wafer 10 presses the device region 11b supported from below by the support portion 34 of the support table 30 from above while pressing the surface of the wafer 10. Since the protective tape T1 is peeled from 10a, excessive force is avoided on the device area, and the problem of the wafer 10 being damaged is eliminated.

상기한 지지 테이블(30)은, 예를 들어, 도 5에 도시하는 바와 같은 형태로 제작할 수 있다. 도 5(a)에는, 지지 테이블(30)을 제작하기 위한 모재(30')가 도시되어 있다. 해당 모재(30')는, 예를 들어, 실리콘(Si)으로 이루어지는 원기둥 부재이다. 상기 모재(30')로부터 상기 지지 테이블(30)을 제작할 때에는, 도 5(a)에 도시하는 연삭 장치(40)를 사용한다(일부만을 나타내고 있다). 연삭 장치(40)는, 회전 스핀들(42)과, 회전 스핀들(42)의 선단에 고정되는 원반 형상의 연삭 지석(43)과, 회전 스핀들(42)을 회전 가능하게 지지하는 스핀들 하우징(44)을 구비하고, 회전 스핀들(42)은, 스핀들 하우징(44)의 후단 측에 배치되는 스핀들 모터(도시는 생략함)에 의해 회전 구동되고, 연삭 장치(40)는, 상기 스핀들 하우징(44)과 상기 모재(30')를 유지하는 도시를 생략하는 척 테이블을 상대적 이동시키는 이동 수단(도시는 생략하고 있음)을 구비하고 있다. 연삭 지석(43)은, 예를 들어, 다이아몬드 지립을 니켈 도금으로 고정한 연삭 지석이며, 직경이 60mm, 두께는 10mm이며, 연삭 지석(43)의 외주단은 대략 평탄면으로 구성된다.The support table 30 described above can be manufactured in a form as shown in FIG. 5, for example. In Figure 5(a), a base material 30' for manufacturing the support table 30 is shown. The base material 30' is, for example, a cylindrical member made of silicon (Si). When manufacturing the support table 30 from the base material 30', the grinding device 40 shown in Fig. 5(a) is used (only a portion is shown). The grinding device 40 includes a rotating spindle 42, a disk-shaped grinding wheel 43 fixed to the tip of the rotating spindle 42, and a spindle housing 44 that rotatably supports the rotating spindle 42. Provided with, the rotating spindle 42 is rotationally driven by a spindle motor (not shown) disposed at the rear end of the spindle housing 44, and the grinding device 40 is provided with the spindle housing 44 and It is provided with a moving means (not shown) that relatively moves the chuck table (not shown) that holds the base material 30'. The grinding wheel 43 is, for example, a grinding wheel made of diamond abrasive grains fixed with nickel plating, and has a diameter of 60 mm and a thickness of 10 mm, and the outer peripheral end of the grinding wheel 43 is composed of a substantially flat surface.

모재(30')로부터 지지 테이블(30)을 제작할 때에는, 상기 척 테이블에 모재(30')를 유지하고, 적절한 얼라인먼트를 실시하여, 도 5(a)에 도시하는 바와 같이, 모재(30')에 있어서 상기한 단차부(32)를 형성하는 영역의 상면으로서, 지지부(34)를 규정하는 환형선(34b)에 외측으로부터 접하도록 연삭 지석(43)을 위치시킨다. 계속해서, 연삭 지석(43)을 화살표(R4)로 나타내는 방향으로 회전시켜, 모재(30')를 화살표(R5)로 나타내는 방향으로 회전시킨다. 상기 모재(30')를 회전시키면, 연삭 지석(43)을, 예를 들어, 1㎛/초의 속도로 하강시켜, 상면으로부터 모재(30')의 외주 영역을 연삭하여 상기한 단차부(32)가 형성되는 위치까지 하강시킨다. 이와 같이 하여, 도 3에 기초하여 설명한 지지부(34)와 단차부(32)를 구비한 지지 테이블(30)이 형성된다.When manufacturing the support table 30 from the base material 30', the base material 30' is held on the chuck table, and proper alignment is performed to form the base material 30' as shown in FIG. 5(a). In the above, the grinding wheel 43 is positioned so as to contact the annular line 34b defining the support portion 34 from the outside as the upper surface of the area forming the step portion 32. Subsequently, the grinding wheel 43 is rotated in the direction indicated by arrow R4, and the base material 30' is rotated in the direction indicated by arrow R5. When the base material 30' is rotated, the grinding wheel 43 is lowered at a speed of, for example, 1㎛/sec, and the outer peripheral area of the base material 30' is ground from the upper surface to form the above-mentioned step portion 32. Descend to the position where is formed. In this way, the support table 30 provided with the support portion 34 and the step portion 32 described based on FIG. 3 is formed.

또한, 본 발명의 지지 테이블은, 상기한 지지 테이블(30)의 형태에 한정되지 않는다. 예를 들어, 도 5(b)에 도시하는 바와 같이, 웨이퍼(10)를 지지할 때에 웨이퍼(10)의 이면(10b) 측에 형성된 오목부(14)가 접촉하는 지지부(34)의 상면에, 웨이퍼(10)의 보호를 목적으로 하는 완충재가 되는 수지(예를 들어, 수지의 시트(T2))를 부설하고 있어도 좋다. 그 시트(T2)는, 예를 들어, 지지부(34)와 동일한 직경으로 형성된 수지의 시트이고, 바람직하게는 열 압착 시트로서, 그 열 압착 시트로는, 예를 들어, 폴리올레핀계 시트, 또는 폴리에스테르계 시트로부터 선택된다. 그 시트(T2)로서 폴리올레핀 시트를 선택하여 지지부(34) 상에 부설하는 경우에는, 그 시트(T2)를 지지부(34) 상에 시트(T2)를 재치하여, 그 시트(T2)를 융점 온도 근방까지 가열함과 함께, 도시를 생략하는 압착 롤러 등을 사용하여 압착하여 부착한다.Additionally, the support table of the present invention is not limited to the form of the support table 30 described above. For example, as shown in FIG. 5(b), when supporting the wafer 10, the concave portion 14 formed on the back surface 10b side of the wafer 10 is in contact with the upper surface of the support portion 34. , resin (for example, resin sheet T2) that serves as a cushioning material for the purpose of protecting the wafer 10 may be laid. The sheet T2 is, for example, a resin sheet formed with the same diameter as the support portion 34, and is preferably a heat-pressed sheet. The heat-pressed sheet may be, for example, a polyolefin-based sheet or a polyolefin-based sheet. It is selected from ester-based sheets. When a polyolefin sheet is selected as the sheet T2 and laid on the support part 34, the sheet T2 is placed on the support part 34, and the sheet T2 is heated to the melting point temperature. It is heated to the nearby area and attached by pressing using a pressing roller (not shown).

이와 같이 지지부(34) 상에 시트(T2)를 배치하는 것에 의해, 지지부(34)에 의해 웨이퍼(10)를 지지할 때에, 시트(T2)가 완충재로서 기능하여, 도 4에 기초하여 설명한 보호 테이프 박리 구성을 실시할 때에 웨이퍼(10)가 파손된다는 문제가 보다 확실하게 회피된다. 또한, 상기 시트(T2) 대신에, 지지부(34) 상에 액상 수지를 적하하여 고화한 층을 형성해도 되고, 상기한 완충재로서 기능시킬 수 있다.By disposing the sheet T2 on the support part 34 in this way, when the wafer 10 is supported by the support part 34, the sheet T2 functions as a cushioning material, providing the protection explained based on FIG. 4. The problem of the wafer 10 being damaged when carrying out the tape peeling configuration is more reliably avoided. Additionally, instead of the sheet T2, a solidified layer may be formed by dropping liquid resin on the support portion 34, and it may function as the cushioning material described above.

지지 테이블(30)은, 상기한 형태에 한정되지 않는다. 도 5(c)에 도시하는 바와 같이, 시트(T2)가 부착된 지지부(34) 및 시트(T2)에, 웨이퍼(10)를 흡인 유지하는 복수의 흡인부(35)를 형성하도록 해도 된다. 그리고, 상기 흡인부(35)에, 단차부(32)를 통해 도시를 생략하는 흡인 수단을 접속하고, 부압(Vm)을 지지부(34) 상에 생성하여, 지지부(34)에 오목부(14)를 위치시켜 웨이퍼(10)를 흡인 유지시킨다. 이에 의해, 상기한 웨이퍼(10)의 표면(10a)으로부터 보호 테이프(T1)를 박리할 때에, 웨이퍼(10)를 확실하게 지지 테이블(30) 상에 흡인 고정할 수 있어, 안정적으로 보호 테이프(T1)를 박리할 수 있다. 또한, 상기 흡인부(35)는, 시트(T2)를 부착하지 않는 경우에도 유효하고, 웨이퍼(10)를 안정적으로 유지하는 것에 공헌한다.The support table 30 is not limited to the above-described form. As shown in FIG. 5(c), the support portion 34 to which the sheet T2 is attached and a plurality of suction portions 35 for suction-holding the wafer 10 may be formed on the sheet T2. Then, a suction means (not shown) is connected to the suction portion 35 through a step portion 32, and a negative pressure Vm is generated on the support portion 34 to create a recessed portion 14 in the support portion 34. ) is positioned to suction and hold the wafer 10. As a result, when peeling the protective tape T1 from the surface 10a of the wafer 10, the wafer 10 can be securely fixed on the support table 30 by suction, and the protective tape ( T1) can be peeled off. Additionally, the suction portion 35 is effective even when the sheet T2 is not attached, and contributes to stably holding the wafer 10.

상기의 보호 테이프 박리 공정은, 지지 테이블(30)을 단독으로 준비하여 실시해도 좋고, 상기한 보호 테이프 박리 공정을 자동화하여 실시할 때에 구성하는 박리 장치에 실장하는 것이어도 좋다. 또한, 다른 가공 장치에 실장되어 있어도 좋다.The above-described protective tape peeling process may be performed by preparing the support table 30 alone, or may be mounted on a peeling device configured when performing the above-mentioned protective tape peeling process automatically. Additionally, it may be mounted on another processing device.

2: 연삭 장치
20: 척 테이블
22: 스핀들
23: 연삭 휠
24: 연삭 지석
10: 웨이퍼
10a: 표면
10b: 이면
11: 일점 쇄선
11a: 외주 잉여 영역
11b: 디바이스 영역
12: 디바이스
13: 분할 예정 라인
14: 오목부
15: 링
30: 지지 테이블
30': 모재
32: 단차부
34: 지지부
35: 흡인 구멍
40: 연삭 장치
42: 스핀들 회전
43: 연삭 지석
44: 스핀들 하우징
T1: 보호 테이프
T2: 시트
2: Grinding device
20: Chuck table
22: spindle
23: grinding wheel
24: grinding wheel
10: wafer
10a: surface
10b: back side
11: dashed line
11a: Outsourced surplus area
11b: Device area
12: device
13: Line scheduled for division
14: recess
15: ring
30: support table
30': Base material
32: Step part
34: support part
35: suction hole
40: Grinding device
42: spindle rotation
43: grinding wheel
44: Spindle housing
T1: Protective tape
T2: Sheet

Claims (4)

복수의 디바이스가 형성된 디바이스 영역과, 그 디바이스 영역을 둘러싸는 외주 잉여 영역을 표면에 갖는 웨이퍼의 처리 방법으로서,
웨이퍼의 표면에 보호 테이프를 배치하는 보호 테이프 배치 공정과,
보호 테이프 측을 척 테이블에 유지하고 웨이퍼의 이면을 연삭하여 디바이스 영역에 대응하는 영역에 오목부를 형성함과 함께 외주 잉여 영역에 대응하는 영역에 볼록 형상의 링을 형성하는 이면 연삭 공정과,
웨이퍼의 표면으로부터 보호 테이프를 박리하는 보호 테이프 박리 공정
을 적어도 포함하고,
상기 보호 테이프 박리 공정에 있어서, 웨이퍼의 이면에 형성된 오목부를 지지하는 지지 테이블을 사용하는 것인, 웨이퍼의 처리 방법.A method for processing a wafer having on its surface a device region in which a plurality of devices are formed and an outer peripheral surplus region surrounding the device region, comprising:
A protective tape placement process of placing a protective tape on the surface of the wafer,
A back side grinding step of holding the protective tape side on a chuck table and grinding the back side of the wafer to form a concave portion in the area corresponding to the device area and to form a convex-shaped ring in the area corresponding to the outer peripheral surplus area;
A protective tape peeling process that peels the protective tape from the surface of the wafer.
Contains at least
A wafer processing method, wherein in the protective tape peeling step, a support table is used to support a concave portion formed on the back side of the wafer. 제1항에 기재된 웨이퍼의 처리 방법에 사용하는 상기 지지 테이블로서,
웨이퍼의 이면에 형성된 오목부에 대응하는 크기의 지지부와,
웨이퍼의 이면에 형성된 볼록 형상의 링에 대응하여 상기 지지부의 외주에 형성된 단차부로 구성되는 것인, 지지 테이블.The support table used in the wafer processing method according to claim 1, comprising:
A support portion of a size corresponding to the concave portion formed on the back side of the wafer,
A support table comprising a step portion formed on the outer periphery of the support portion corresponding to a convex-shaped ring formed on the back surface of the wafer. 제2항에 있어서,
상기 지지부의 상면에 수지가 부설되는 것인, 지지 테이블.According to paragraph 2,
A support table in which resin is laid on the upper surface of the support part. 제2항에 있어서,
상기 지지부에는, 웨이퍼의 오목부를 흡인 유지하는 흡인부가 형성되는 것인, 지지 테이블.
According to paragraph 2,
A support table wherein a suction portion for suction-holding a concave portion of the wafer is formed in the support portion.
KR1020230062752A 2022-05-23 2023-05-16 Method of processing wafer and support table KR20230163297A (en)

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JP2022083645A JP2023172079A (en) 2022-05-23 2022-05-23 Wafer processing method and support table

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019461A (en) 2005-04-27 2007-01-25 Disco Abrasive Syst Ltd Method for processing wafer and wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019461A (en) 2005-04-27 2007-01-25 Disco Abrasive Syst Ltd Method for processing wafer and wafer

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