KR20230155423A - Adhesive film and its evaluation method, semiconductor device manufacturing method, and dicing/die bonding integrated film - Google Patents

Abstract

An evaluation method for an adhesive film used in a semiconductor device manufacturing process, comprising the step of performing a tack test with a heated probe, wherein the thickness of the adhesive film to be evaluated is 20 μm or less. This tack test, for example, uses an apparatus including a stage that supports a sample of an adhesive film and a probe that can move up and down with respect to the stage and can set a temperature, and a polyimide layer is placed between the stage and the sample. It is performed with a film interposed.

Description

Adhesive film and its evaluation method, semiconductor device manufacturing method, and dicing/die bonding integrated film

The present disclosure relates to an adhesive film used in a semiconductor device manufacturing process and an evaluation method thereof, a semiconductor device manufacturing method, and an integrated dicing/die bonding film.

Conventionally, semiconductor devices are manufactured through the following processes. First, a semiconductor wafer is attached to an adhesive sheet for dicing, and in that state, the semiconductor wafer is divided into semiconductor chips (dicing process). After that, a pickup process, pressing process, die bonding process, etc. are performed.

Patent Document 1 discloses a dicing die-bond film that has both the function of fixing a semiconductor wafer in a dicing process and the function of bonding a semiconductor chip to a substrate in a die-bonding process. In the dicing process, a chip with adhesive pieces is obtained by separating the semiconductor wafer and the adhesive layer into pieces.

Patent Document 1: Japanese Patent Publication No. 2017-216273

Conventionally, as shown in FIG. 8, when relatively thin chips C1 to C4 are arranged in multiple stages with an adhesive layer A interposed on the substrate 30, due to the bending stress of the chips C1 to C4, Peeling is likely to occur between the first-stage chip C1 and the second-stage chip C2. Patent Document 1 states that problems caused by chip bending can be solved by setting the tensile storage modulus of the die-bond film at 150°C before heat curing within a predetermined range.

However, with the advancement of thinner adhesive films (die-bond films), the number of problems in the semiconductor manufacturing process that cannot be addressed with conventional indicators is increasing. According to the present inventors' examination, physical properties such as tensile storage modulus, shear viscosity, and die shear of the adhesive film do not necessarily show a correlation with the process evaluation results. Therefore, the present inventors decided to develop a new evaluation method for an adhesive film that is useful for suppressing the occurrence of peeling in a semiconductor package due to chip bending.

The present disclosure provides an evaluation method for an adhesive film that can be used as an evaluation object for an adhesive film with a thickness of 20 μm or less and is useful for dealing with the problem of peeling due to chip bending in the manufacturing process of a semiconductor device. Additionally, the present disclosure provides an adhesive film capable of sufficiently suppressing the occurrence of the peeling, a method of manufacturing a semiconductor device using the same, and an integrated dicing/die bonding film containing the adhesive film.

One aspect of the present disclosure relates to a method for evaluating an adhesive film used in a semiconductor device manufacturing process. This evaluation method includes the step of performing a tack test with a heated probe, and the thickness of the adhesive film to be evaluated is 20 μm or less.

As a result of observing the cross section of the semiconductor package with an electron microscope, the present inventors found that the mode of peeling that occurs within the semiconductor package is mainly peeling at the interface between the adhesive film and the chip, not cohesive failure of the adhesive film. did. From this point, the present inventors assumed that peeling occurred within a short period of time after the chip was pressed, and came to the realization that it was necessary to determine the instantaneous adhesive force (tackiness) of the adhesive film. Based on this recognition, the idea was to evaluate the adhesive film by a tack test. Additionally, the tack test using a probe can be performed in accordance with the method described in ASTM D-2979 (Standard Test Method for Pressure-Sensitive Tack of Adhesives Using an Inverted Probe Machine).

The tack test can be performed using an apparatus including a stage that supports a sample of the adhesive film and a probe that can move up and down with respect to the stage and can set a temperature. From the viewpoint of acquiring data with less unevenness, it is preferable to perform the tack test with a resin film interposed between the stage and the sample. Since a thin adhesive film is the object of evaluation, if the surfaces of the stage and probe are not strictly horizontal, the surface of the probe tends to bias the sample, which makes it possible to efficiently acquire data with less unevenness. It's difficult. By using a resin film, it is possible to avoid a state in which the surface of the probe biases the sample. Additionally, examples of resin films include polyimide films. Polyimide film has appropriate elasticity and heat resistance.

From the correlation between the results of the above evaluation method and the presence or absence of peeling in the actually produced semiconductor package, when the adhesive film satisfies both conditions 1 and 2 below, the adhesive film can be judged to be good.

(Condition 1) In a tack test with the probe temperature set to 100°C, the tack is 2.5N/5mmϕ or more.

(Condition 2) In a tack test with the probe temperature set to 120°C, the tack is 2.5N/5mmϕ or more.

One aspect of the present disclosure relates to a method of manufacturing a semiconductor device. This manufacturing method includes a process of preparing a laminated film containing an adhesive film with a thickness of 20 μm or less, a process of attaching the laminated film to the wafer so that the adhesive film is in contact with the surface of the wafer, and separating the wafer and the adhesive film into individual pieces. The adhesive film includes a step of producing a chip with adhesive pieces and a step of bonding the chip with adhesive pieces on the surface of a substrate or another chip, and the adhesive film is an adhesive film judged to be good in the above evaluation method. According to this method, internal peeling is unlikely to occur and a highly reliable semiconductor device can be manufactured.

One aspect of the present disclosure relates to an adhesive film used in a semiconductor device manufacturing process. This adhesive film has a thickness of 20 μm or less and is judged to be good in the above evaluation method. One aspect of the present disclosure relates to a dicing/die bonding integrated film. This film is composed of an adhesive film that includes a base film, an adhesive layer with a thickness of 20 μm or less, and an adhesive layer in this order, and the adhesive layer is judged to be good in the above evaluation method.

According to the present disclosure, an evaluation method for an adhesive film that can be evaluated using an adhesive film with a thickness of 20 μm or less and that is useful for dealing with the problem of peeling due to bending of a semiconductor chip in the manufacturing process of a semiconductor device is provided. Additionally, according to the present disclosure, an adhesive film capable of sufficiently suppressing the occurrence of the peeling, a method for manufacturing a semiconductor device using the same, and an integrated dicing/die bonding film containing the adhesive film are provided.

1 is a cross-sectional view schematically showing an example of a device for performing a tack test.
FIG. 2(a) is a plan view schematically showing one embodiment of the dicing/die bonding integrated film according to the present disclosure, and FIG. 2(b) is a plan view along line BB in FIG. 2(a). This is a schematic cross-sectional view.
3 is a cross-sectional view schematically showing one embodiment of a semiconductor device according to the present disclosure.
Figure 4 is a cross-sectional view schematically showing an example of a chip with an adhesive piece attached.
FIG. 5(a) and FIG. 5(b) are cross-sectional views schematically showing the process of manufacturing the chip with the adhesive piece shown in FIG. 4.
6(a) to 6(c) are cross-sectional views schematically showing the process of manufacturing the chip with the adhesive piece shown in FIG. 4.
FIG. 7(a) and FIG. 7(b) are cross-sectional views schematically showing the process of manufacturing the semiconductor device shown in FIG. 3.
Figure 8 is a cross-sectional view schematically showing a structure in which peeling has occurred between a first-tier chip and a second-tier chip.
Fig. 9 is a cross-sectional view schematically showing structures manufactured in Examples and Comparative Examples in order to reproduce peeling in the semiconductor device manufacturing process.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the following description, identical or significant parts are given the same reference numerals, and overlapping descriptions are omitted. In addition, positional relationships such as up, down, left, right, etc. are assumed to be based on the positional relationships shown in the drawings, unless specifically explained. The dimensional ratios in the drawings are not limited to the illustrated ratios. In this specification, (meth)acrylate means acrylate or methacrylate corresponding thereto. The same applies to other similar expressions such as (meth)acryloyl group and (meth)acrylic copolymer.

When terms such as “left”, “right”, “front”, “back”, “top”, “bottom”, “top”, “bottom”, etc. are used in the description and claims of this specification. , these are intended to be illustrative and do not necessarily mean that this relative position is permanent. Additionally, the term "layer" includes structures formed on a part of the surface in addition to structures formed on the entire surface when observed in a plan view. “A or B” may include either A or B, or may include both.

In this specification, the term "process" is included in this term not only as an independent process, but also in cases where the desired effect of the process is achieved even if it cannot be clearly distinguished from other processes. In addition, the numerical range indicated using “~” indicates a range that includes the numerical values written before and after “~” as the minimum and maximum values, respectively.

In this specification, the content of each component in the composition means the total amount of the plurality of substances present in the composition, unless otherwise specified, when multiple substances corresponding to each component exist in the composition. In addition, unless otherwise specified, the exemplified materials may be used individually or two or more types may be used in combination. In addition, in the numerical range described in stages in this specification, the upper or lower limit of the numerical range at a certain level may be replaced with the upper or lower limit of the numerical range at another level. In addition, in the numerical range described in this specification, the upper or lower limit of the numerical range may be replaced with the value shown in the examples.

<Evaluation method of adhesive film>

The evaluation method of the adhesive film according to this embodiment includes the step of performing a tack test with a heated probe. The adhesive film to be evaluated is used in the manufacturing process of a semiconductor device. The thickness of the adhesive film is 20 μm or less, and may be 18 μm or less, 15 μm or less, 12 μm or less, or 10 μm or less. The lower limit of the thickness of the adhesive film is not particularly limited, but may be, for example, 1 μm or 5 μm. When the thickness of the adhesive film is 20 μm or less, a thin semiconductor device can be realized, while when it is 1 μm or more, it is easy to ensure sufficient adhesive strength.

1 is a cross-sectional view schematically showing an example of a device for performing a tack test. The device 10 shown in this figure includes a stage 1, a probe 2, and a pressing jig 3. The probe 2 is pressed against the sample S (adhesive film) on the stage 1, and the adhesive force during separation is measured. The probe 2 can move in the vertical direction with respect to the stage 1 and can also set the temperature. The tip of the probe 2 is made of stainless steel and has a cylindrical shape. The tip surface of the probe 2 is sufficiently flat and smooth. The pressing jig 3 is for pressing the sample S on the stage so that the sample S is attached to the probe 2 and does not move upward. By converting the load applied to the probe 2 into an electric signal, data on the adhesive force of the sample can be obtained. The tack test can be performed using a commercially available device (e.g., Tacking Tester TAC1000 (brand name), Reska Co., Ltd.).

The conditions for the tack test should be within the following range.

·Temperature of stage (1): 20~25℃ (room temperature)

Temperature of probe (2): 80~140℃

· Entry speed of probe (2): 0.5 to 2.0 mm/sec

· Pressure force: 0.05~0.2MPa

· Pressurization time: 0.5 to 5 seconds

Separation speed of probe (2): 0.5 to 5.0 mm/sec

From the viewpoint of acquiring data with less unevenness, it is preferable to perform the tack test with the polyimide film 5 (resin film) interposed between the stage 1 and the sample S, as shown in FIG. 1. do. The thickness of the polyimide film 5 may be, for example, 50 to 200 μm or 100 to 150 μm. The tensile elastic modulus of the polyimide film 5 is, for example, 2.5 to 4.5 GPa. This tensile modulus means a value measured based on the method described in ASTM D-882. The heat-resistant temperature of the polyimide film 5 is, for example, 250 to 320°C. In addition, although the case of using the polyimide film 5 is illustrated here, other resin films may be used. The resin film may have the same level of elasticity as the polyimide film and heat resistance higher than the probe setting temperature. Specific examples include aramide film, polyphenylene sulfide film, polyethylene naphthalate film, and polyethylene terephthalate film. You can.

From the correlation between the results of the evaluation method by the tack test and the presence or absence of peeling in the actually produced semiconductor package, when the adhesive film satisfies both conditions 1 and 2 below, the adhesive film is judged to be good. You can.

(Condition 1) In a tack test with the probe temperature set to 100°C, the tack is 2.5N/5mmϕ or more.

(Condition 2) In a tack test with the probe temperature set to 120°C, the tack is 2.5N/5mmϕ or more.

When determining whether the adhesive film satisfies conditions 1 and 2, the tack test is conducted under the following conditions.

Temperature of stage (1): 25℃

Temperature of probe (2): 100℃ or 120℃

· Entry speed of probe (2): 1.0 mm/sec

· Pressure force: 0.1MPa

· Pressurization time: 1.0 seconds

Separation speed of probe (2): 1.0 mm/sec

·Top section of probe (2): circular with a diameter of 5 mm

In the tack test in which the probe temperature is set to 100°C, as above, the tack is 2.5 N/5 mmϕ or more (condition 1), but this value may be 3.0 N/5 mmϕ or more. The upper limit of this value is, for example, 6.0N/5mmphi. In the tack test in which the probe temperature is set to 120°C, as above, the tack is 2.5 N/5 mmϕ or more (condition 2), but this value may be 3.0 N/5 mmϕ or more. The upper limit of this value is, for example, 6.0N/5mmphi.

<Dicing/die bonding integrated film>

An adhesive film that satisfies both conditions 1 and 2 can be applied to the adhesive layer of an integrated dicing/die bonding film. Figure 2(a) is a plan view schematically showing the integrated dicing/die bonding film according to the present embodiment, and Figure 2(b) is a schematic cross-sectional view taken along line B-B in Figure 2(a). . The dicing/die bonding integrated film 20 (hereinafter, in some cases, simply referred to as “film 20”) includes a base film 11, an adhesive layer 13, and an adhesive layer 15. Prepare in this order. The adhesive layer 15 is made of an adhesive film that satisfies both conditions 1 and 2 above. In the present embodiment, an embodiment in which a laminate of the adhesive layer 13 and the adhesive layer 15 is formed on the square base film 11 is illustrated, but the base film 11 has a predetermined length (e.g. , 100 m or more), and the laminates of the adhesive layer 13 and the adhesive layer 15 may be arranged at predetermined intervals so as to be aligned in the longitudinal direction.

Examples of the base film 11 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. The base film 11 may be subjected to surface treatment such as primer application, UV treatment, corona discharge treatment, polishing treatment, or etching treatment as needed.

The adhesive layer 13 has a first surface F1 facing the base film 11 and a second surface F2 on the opposite side. The adhesive layer 13 is formed, for example, through a process of applying a coating liquid containing a resin composition having appropriate adhesive strength to the surface of the plastic film. The adhesive layer 13 may have a property in which the adhesive strength is reduced by, for example, irradiation with ultraviolet rays.

The adhesive layer 15 is provided to cover the central portion of the second surface F2 of the adhesive layer 13. As described above, the adhesive layer 15 is made of an adhesive film (film-like adhesive) that satisfies both conditions 1 and 2. The adhesive layer 15 is made of a thermosetting resin composition and has excellent adhesive strength (tackiness). By manufacturing a semiconductor device using the adhesive layer 15, peeling due to chip bending within the semiconductor device can be sufficiently suppressed.

The adhesive layer 15 includes, for example, a thermosetting resin (hereinafter sometimes referred to as "(A) component"), a curing agent (hereinafter sometimes referred to as "(B) component"), Contains an elastomer (hereinafter sometimes referred to as “(C) component”). The adhesive layer 15 contains, in addition to component (A), component (B), and component (C), an inorganic filler (hereinafter, sometimes referred to as "component (D)"), and a coupling agent (hereinafter, "component (D)"). It may further contain (sometimes referred to as "(E) component"), a hardening accelerator (hereinafter sometimes referred to as "(F) component"), other components, etc. The adhesive layer 15 may be in a semi-cured (B stage) state and then in a fully cured (C stage) state after curing treatment.

(A) Ingredient: Thermosetting resin

Component (A) may contain an epoxy resin from the viewpoint of adhesiveness, or may consist of one type or two or more types of epoxy resin. The adhesive layer 15 contains, as the (A) component, for example, an epoxy resin having a fluorene skeleton (hereinafter sometimes referred to as “component (A1)”).

The component (A1) is, for example, a compound that has a fluorene skeleton and an epoxy group in the molecule. Component (A1) can be used without particular restrictions as long as it is a compound that satisfies these conditions. By containing the component (A1) as a thermosetting resin, the adhesive layer 15 can be excellent in dividing properties by cooling expand and also excellent in adhesion to the wafer. The inventors of the present disclosure consider the reason for such an effect as follows. Since the fluorene skeleton is rigid and has a three-dimensional bulky structure, it is presumed that it is possible for molecules of other materials to enter the gaps in the structure. Therefore, it is believed that component (A1) is easily miscible with an elastomer (for example, acrylic rubber) and changes the properties of the elastomer from being flexible and difficult to cut to hard and easy to break. Accordingly, it is thought that as the elastic modulus improves, the adhesion to the wafer also improves.

The (A1) component may be, for example, an epoxy resin represented by the following general formula (X).

[Formula 1]

In formula (X), Z ¹ and Z ² each independently represent a divalent aromatic hydrocarbon group. Z ¹ and Z ² may be the same or different, but may also be the same. The divalent aromatic hydrocarbon group is a monocyclic aromatic hydrocarbon (for example, benzene), or a polycyclic aromatic hydrocarbon (for example, a bicyclic aromatic hydrocarbon such as naphthalene or indene). ; tricyclic aromatic hydrocarbons such as anthracene, phenanthrene, dihydrophenanthrene, and fluorene; tetracyclic aromatic hydrocarbons such as benzoanthracene, benzophenanthrene, benzofluorene, pyrene, and fluoranthene, etc. ), a group in which two hydrogen atoms directly bonded to the carbon atom constituting the ring have been removed can be mentioned. A divalent aromatic hydrocarbon group is a group obtained by removing two hydrogen atoms directly bonded to the carbon atom constituting the ring from an aromatic hydrocarbon formed by linking multiple aromatic hydrocarbons (for example, biphenyldiyl group, terphenyl group) diary, etc.) are included. The divalent aromatic hydrocarbon group may be a benzenediyl group (phenylene group) or naphthalenediyl (naphthalene group).

The fluorene skeleton in the epoxy resin represented by formula (X) and the divalent aromatic hydrocarbon group represented by Z ¹ and Z ² may have a substituent. Examples of the substituent include alkyl groups such as methyl, ethyl, and propyl groups; Cycloalkyl groups such as cyclopentyl group and cyclohexyl group; Aryl groups such as phenyl group and naphthyl group; Aralkyl groups such as benzyl groups; Acyl groups such as acetyl group, propionyl group, and benzoyl group; Alkoxy groups such as methoxy group, ethoxy group, propyloxy group, and isopropyloxy group; Alkoxycarbonyl groups such as methoxycarbonyl group and ethoxycarbonyl group; Cyano group; Carboxyl group; nitrogyne; amino group; Substituted amino groups (for example, mono or dialkylamino groups, etc.); Halogen atoms such as fluorine atoms and chlorine atoms can be mentioned.

In formula (X), R ^1A and R ^2A each independently represent an alkylene group having 1 to 10 carbon atoms. R ^1A and R ^2A may be the same or different, but may also be the same. Examples of the alkylene group include linear or branched alkylene groups having 1 to 10 carbon atoms, such as methylene group, ethylene group, propylene group, trimethylene group, tetramethylene group, and hexamethylene group. The alkylene group may be an alkylene group with 2 to 6 carbon atoms, or an alkylene group with 2 or 3 carbon atoms.

In formula (X), p1 and p2 each independently represent an integer of 0 or more. p1 and p2 may be the same or different, but may also be the same. p1 and p2 may be integers of 0 to 4, or may be integers of 1 to 4.

In formula (X), R ^1B , R ^1C , R ^1D , R ^1E , R ^1F , R ^2B , R ^2C , R ^2D , R ^2E , and R ^2F are each independently a hydrogen atom or a carbon atom of 1 to 1. Represents an alkyl group of 6. R ^1B , R ^1C , R ^1D , R ^1E , R ^1F , R ^2B , R ^2C , R ^2D , R ^2E , and R ^2F may be the same or different. Examples of alkyl groups having 1 to 6 carbon atoms include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, s-butyl, t-butyl, pentyl, and hexyl groups. You can. R ^1B , R ^1C , R ^1D , R ^1E , R ^1F , R ^2B , R ^2C , R ^2D , R ^2E , and R ^2F may be a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, or may be a hydrogen atom. .

Commercially available epoxy resins represented by general formula (X) include, for example, PG-100, EG-200, and CG-500 (brand names, all manufactured by Osaka Gas Chemical Co., Ltd.).

The epoxy equivalent of component (A1) is not particularly limited, but may be 80 to 600 g/eq, 100 to 500 g/eq, or 200 to 400 g/eq. When the epoxy equivalent of component (A1) is within this range, better reactivity and fluidity tend to be obtained.

The content of component (A1) may be 40 to 100 mass% based on the total mass of component (A). When the content of component (A1) is within this range, the effects of the present disclosure tend to appear more significantly. The content of component (A1) may be 50% by mass or more, 60% by mass or more, 70% by mass or more, or 80% by mass or more, based on the total mass of component (A).

The content of component (A1) may be 1 mass% or more, 3 mass% or more, or 5 mass% or more, and may be 30 mass% or less, 20 mass% or less, or It may be 15% by mass or less. If the content of component (A1) is 1% by mass or more based on the total mass of the adhesive layer 15, the elastic modulus after curing tends to be more excellent. If the content of component (A1) is 30% by mass or less based on the total mass of the adhesive layer 15, the flexibility before curing tends to be more excellent.

In addition to component (A1), component (A) may further contain an epoxy resin that does not have a fluorene skeleton in the molecule (hereinafter sometimes referred to as "component (A2)"). (A2) Examples of the component include bisphenol A type epoxy resin; Bisphenol F-type epoxy resin; Bisphenol S-type epoxy resin; Phenol novolac type epoxy resin; Cresol novolac type epoxy resin; Bisphenol A novolac type epoxy resin; Bisphenol F novolac type epoxy resin; Stilbene type epoxy resin; Epoxy resin containing a triazine skeleton; Triphenol methane type epoxy resin; Bisphenol type epoxy resin; Xylylene type epoxy resin; Biphenyl aralkyl type epoxy resin; Naphthalene type epoxy resin; Diglycidyl ether compounds of polycyclic aromatics such as polyfunctional phenols and anthracene can be mentioned. Among these, component (A2) may contain a cresol novolac type epoxy resin.

The epoxy equivalent of component (A2) is not particularly limited, but may be 80 to 600 g/eq, 100 to 500 g/eq, or 200 to 400 g/eq. When the epoxy equivalent of component (A1) is within this range, better reactivity and fluidity tend to be obtained.

The content of component (A2) may be 0 to 60% by mass based on the total mass of component (A). The content of component (A2) may be 50 mass% or less, 40 mass% or less, 30 mass% or less, or 20 mass% or less based on the total mass of component (A).

The content of component (A) may be 1 mass% or more, 3 mass% or more, or 5 mass% or more, and may be 30 mass% or less, 20 mass% or less, or It may be 15% by mass or less. If the content of component (A) is 1% by mass or more based on the total mass of the adhesive layer 15, the elastic modulus after curing tends to be more excellent. If the content of component (A) is 30% by mass or less based on the total mass of the adhesive layer 15, the flexibility before curing tends to be more excellent.

(B) Ingredient: Hardener

As a curing agent for component (A), a commonly used curing agent can be used. When component (A) contains an epoxy resin (consisting of one or two or more types of epoxy resins), examples of component (B) include phenol resin, ester compound, aromatic amine, aliphatic amine, acid anhydride, etc. I can hear it. Among these, from the viewpoint of reactivity and stability over time, component (B) may be a phenol resin.

Phenol resins can be used without particular restrictions as long as they have a phenolic hydroxyl group in the molecule. Phenol resins include, for example, phenols such as phenol, cresol, resocin, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol, and/or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene. Phenols such as allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, phenol, etc., obtained by condensing or co-condensing compounds having an aldehyde group such as formaldehyde and formaldehyde under an acidic catalyst. /Or phenol aralkyl resin, naphthol aralkyl resin, biphenyl aralkyl type phenol resin, phenyl aralkyl type phenol resin, etc. synthesized from naphthols and dimethoxyparaxylene or bis(methoxymethyl)biphenyl. .

The hydroxyl equivalent of the phenol resin may be 70 g/eq or more or 70 to 300 g/eq. If the hydroxyl equivalent of the phenol resin is 70 g/eq or more, the storage modulus tends to improve further, and if it is 300 g/eq or less, it becomes possible to prevent problems due to foaming and outgassing.

The softening point of the phenolic resin may be 90°C or higher, 95°C or higher, 100°C or higher, 105°C or higher, 110°C or higher, or 115°C or higher. The upper limit of the softening point of the phenol resin may be, for example, 200°C or lower. In addition, the softening point is based on JIS K7234 and means a value measured by the ring and ball method.

The content of component (B) may be 1 mass% or more, 2 mass% or more, or 3 mass% or more, and may be 20 mass% or less, 15 mass% or less, or It may be 10% by mass or less.

When the component (A) is an epoxy resin and the component (B) is a phenol resin, the ratio of the epoxy equivalent of the epoxy resin and the hydroxyl equivalent of the phenol resin (epoxy equivalent of the epoxy resin/hydroxyl equivalent of the phenol resin) is from the viewpoint of curability. It may be 0.30/0.70~0.70/0.30, 0.35/0.65~0.65/0.35, 0.40/0.60~0.60/0.40, or 0.45/0.55~0.55/0.45. If the equivalence ratio is 0.30/0.70 or more (the epoxy equivalent of the epoxy resin is 0.30 or more), more sufficient curability tends to be obtained. If the equivalence ratio is 0.70/0.30 or less (the epoxy equivalent of the epoxy resin is 0.70 or less), excessive increase in viscosity can be prevented and more sufficient fluidity can be obtained.

The total content of component (A) and component (B) may be 1% by mass or more, 5% by mass or more, or 10% by mass or more based on the total mass of the adhesive layer 15. When the total content of component (A) and component (B) is within this range, adhesiveness tends to improve further. The total content of component (A) and component (B) may be 40% by mass or less, 30% by mass or less, or 20% by mass or less based on the total mass of the adhesive layer 15 from the viewpoint of handleability. .

(C) Ingredient: Elastomer

(C) As a component, for example, acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, butadiene resin; Modified forms of these resins, etc. can be mentioned. These may be used individually or in combination of two or more types. Among these, component (C) contains structural units derived from (meth)acrylic acid ester because it contains fewer ionic impurities, has better heat resistance, is easier to ensure connection reliability of semiconductor devices, and has better fluidity. An acrylic resin (acrylic rubber) may be used as the main component. The content of the structural unit derived from (meth)acrylic acid ester in component (C) may be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more, based on the total amount of structural units. . The acrylic resin (acrylic rubber) may contain a structural unit derived from (meth)acrylic acid ester having a crosslinkable functional group such as an epoxy group, alcoholic or phenolic hydroxyl group, or carboxyl group.

The glass transition temperature (Tg) of component (C) may be 5°C or higher and may be 10°C or higher. When the Tg of component (C) is 5°C or higher, it becomes possible to further improve the adhesiveness of the adhesive layer 15, and further tends to prevent the flexibility of the adhesive layer 15 from becoming excessively high. . This makes it easier to cut the adhesive layer 15 during wafer dicing and prevents the generation of burrs. The upper limit of Tg of component (C) is not particularly limited, but may be, for example, 55°C or lower, 50°C or lower, 45°C or lower, 40°C or lower, 35°C or lower, 30°C or lower, or 25°C or lower. If the Tg of component (C) is 55°C or lower, there is a tendency to suppress a decrease in the flexibility of the adhesive layer 15. Accordingly, when attaching the adhesive layer 15 to the wafer, it tends to be easy to sufficiently fill voids. Additionally, it is possible to prevent chipping during dicing due to a decrease in adhesion to the wafer. Here, the glass transition temperature (Tg) means a value measured using a DSC (differential scanning calorimeter) (for example, Thermo Plus 2, manufactured by Rigaku Co., Ltd.). The Tg of component (C) is determined by adjusting the type and content of the structural units constituting component (C) (when component (C) is an acrylic resin (acrylic rubber), structural units derived from (meth)acrylic acid ester). , can be adjusted to the desired range.

(C) The weight average molecular weight (Mw) of component may be 100,000 or more, 300,000 or more, or 500,000 or more, and may be 3 million or less, 2 million or less, or 1 million or less. When the Mw of component (C) is in this range, film formation properties, film strength, flexibility, tackiness, etc. can be appropriately controlled, and reflow properties are excellent and embedding properties can be improved. Here, Mw means a value measured by gel permeation chromatography (GPC) and converted using a calibration curve using standard polystyrene.

Commercially available products of component (C) include SG-P3, SG-80H (all manufactured by Nagase Chemtex Corporation), and KH-CT-865 (manufactured by Hitachi Kasei Corporation).

The content of component (C) may be 30% by mass or more, 40% by mass or more, or 45% by mass or more based on the total mass of the adhesive layer 15. When the content of component (C) is within this range, thin film coatability tends to be more excellent. The content of component (C) may be 80 mass% or less, 70 mass% or less, or 65 mass% or less based on the total mass of the adhesive layer 15. If the content of component (C) is within this range, the content of component (A) and (B) can be sufficiently secured, and there is a tendency for it to be compatible with other properties.

(D) Ingredient: Inorganic filler

(D) Components include, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, silica, etc. I can hear it. These may be used individually or in combination of two or more types. Among these, component (D) may be silica from the viewpoint of adjustment of melt viscosity. The shape of the component (D) is not particularly limited, but may be spherical.

The average particle diameter of the component (D) may be 0.7 μm or less, 0.6 μm or less, or 0.5 μm or less from the viewpoint of fluidity and storage modulus. (D) The average particle diameter of component may be, for example, 0.01 μm or more. Here, the average particle diameter means a value obtained by converting from the BET specific surface area.

The content of component (D) may be 60 mass% or less, 50 mass% or less, or 45 mass% or less based on the total mass of the adhesive layer 15. When the content of component (D) is within this range, thin film coatability tends to be more excellent. The content of component (D) may be 10 mass% or more, 15 mass% or more, or 20 mass% or more based on the total mass of the adhesive layer 15.

(E) Ingredient: Coupling agent

(E) The component may be a silane coupling agent. As silane coupling agents, for example, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-(2-aminoethyl) ) Aminopropyl trimethoxysilane, etc. can be mentioned.

(F) Ingredient: Curing accelerator

Examples of the component (F) include imidazoles and their derivatives, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. These may be used individually or in combination of two or more types. Among these, from the viewpoint of reactivity, the (F) component may be imidazoles or their derivatives.

Examples of imidazole include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methyl. Midazole, etc. can be mentioned. These may be used individually or in combination of two or more types.

The adhesive layer 15 may further contain other components. Other components include, for example, pigments, ion trapping agents, antioxidants, etc.

The total content of component (E), component (F), and other components may be 0.1 mass% or more, 0.3 mass% or more, or 0.5 mass% or more, based on the total mass of the adhesive layer 15. , it may be 20 mass% or less, 10 mass% or less, or 5 mass% or less.

<Semiconductor device>

Fig. 3 is a cross-sectional view schematically showing the semiconductor device according to this embodiment. The semiconductor device 50 shown in this figure includes a substrate 30, four chips (C1, C2, C3, C4) stacked on the surface of the substrate 30, and an electrode ( (not shown), wires (W1, W2, W3, W4) that electrically connect four chips (C1, C2, C3, C4), and a sealing layer (35) that seals them.

The substrate 30 is, for example, an organic substrate, or may be a metal substrate such as a lead frame. From the viewpoint of suppressing warping of the semiconductor device 50, the thickness of the substrate 30 is, for example, 70 to 140 μm, and may be 80 to 100 μm.

The four chips C1, C2, C3, and C4 are stacked with the cured product 15c of the adhesive piece 15p interposed therebetween. The shape of the chips C1, C2, C3, and C4 in plan view is, for example, a square or rectangle. The area of the chips (C1, C2, C3, C4) in plan view is 30 to 250 mm ² , and may be 40 to 200 mm ² or 50 to 150 mm ² . The length of one side of the chips C1, C2, C3, and C4 in plan view is, for example, 6.0 mm or more, and may be 7.0 to 18 mm or 8.0 to 15 mm. The thickness of the chips C1, C2, C3, and C4 is, for example, 10 to 150 μm, and may be 20 to 80 μm. Additionally, the length of one side of the four chips (C1, C2, C3, C4) may be the same or different from each other, and the thickness is also the same. Additionally, the four chips (C1, C2, C3, C4) may be relatively small in size. That is, the area of the chips C1, C2, C3, and C4 may be less than 30 mm ² , for example, 0.1 to 20 mm ² or 1 to 15 mm ² .

<Adhesive piece attachment chip>

Figure 4 is a cross-sectional view schematically showing an example of a chip with an adhesive piece attached. The chip 25 with an adhesive piece shown in FIG. 4 consists of an adhesive piece 15p and a chip C. As shown in this figure, the adhesive piece 15p and the chip C1 are substantially the same size. This is the same for the adhesive piece 15p and the chips C2, C3, and C4.

An example of a method of manufacturing the adhesive piece attachment chip 25 will be described. First, a protective film (also called BG tape) is attached to the circuit surface Wa of the wafer W. A laser is irradiated to the wafer W to form a plurality of cutting lines L (stealth dicing). Thereafter, if necessary, the wafer W is subjected to backgrinding and polishing. Additionally, although stealth dicing using a laser is exemplified here, the wafer W may be half cut using a blade instead of this. Half cut means not cutting the wafer W, but forming a notch corresponding to the cutting line L of the wafer W. The wafer W may be single crystal silicon, polycrystalline silicon, various ceramics, or a compound semiconductor such as gallium arsenide.

Next, as shown in FIG. 5(a), the film 20 is attached to the back surface Wb of the wafer W so that the adhesive layer 15 is in contact with it. Additionally, a dicing ring DR is attached to the peripheral edge portion 13a of the adhesive layer 13. Thereafter, the wafer W and the adhesive layer 15 are separated into individual pieces by cooling expand under temperature conditions of 0 to -15°C. That is, as shown in FIG. 5(b), tension is applied to the base film 11 by pushing up the inner region 11a of the dicing ring DR in the base film 11 with the ring Ra. Grant. As a result, the wafer W is divided along the cutting line L, and the adhesive layer 15 is divided into adhesive pieces 15p. A plurality of adhesive piece attachment chips 25 are obtained on the surface of the adhesive layer 13. The chip 25 with the adhesive piece is comprised of the chip C and the adhesive piece 15p.

By heating the inner region 11a of the dicing ring DR in the base film 11, the inner region 11a is contracted. FIG. 6(a) is a cross-sectional view schematically showing the inner region 11a being heated by the blow of the heater H. By shrinking the inner region 11a into an annular shape and applying tension to the base film 11, the gap between adjacent adhesive piece attachment chips 25 can be widened. As a result, the occurrence of pickup errors can be further suppressed, and the visibility of the chip 25 with adhesive pieces in the pickup process can be improved.

Next, as shown in Figure 6(b), the adhesive strength of the adhesive layer 13 is reduced by irradiation of activation energy (for example, ultraviolet UV). The irradiation amount of active energy rays to the adhesive layer 13 is, for example, 10 to 1000 mJ/cm ² , and may be 100 to 700 mJ/cm ² or 200 to 500 mJ/cm ² . Thereafter, as shown in (c) of FIG. 6, the chip 25 with the adhesive piece is pushed up with the pushing jig 42, thereby peeling the chip with the adhesive piece 25 from the adhesive layer 13. , the adhesive piece attachment chip 25 is picked up by suction with the suction collet 44.

<Method for manufacturing semiconductor devices>

The manufacturing method of the semiconductor device 50 will be described. First, as shown in (a) of FIG. 7, the first stage chip C1 is pressed onto the surface of the substrate 30. That is, the chip C1 is pressed to a predetermined position on the substrate 30 via the adhesive piece 15p of the chip 25 with adhesive piece attached. This compression treatment is preferably performed for 0.5 to 3.0 seconds under conditions of, for example, 80 to 180°C and 0.01 to 0.50 MPa. Next, the adhesive piece 15p is hardened by heating. This curing treatment is preferably performed for 5 minutes or more under conditions of, for example, 60 to 175°C and 0.01 to 1.0 MPa. As a result, the adhesive piece 15p hardens to become the cured product 15c. The curing treatment of the adhesive piece 15p may be performed in a pressurized atmosphere from the viewpoint of reducing voids.

In the same manner as the installation of the chip C1 on the substrate 30, the second level chip C2 is installed on the surface of the chip C1. The structure 40 shown in (b) of FIG. 7 is manufactured by further installing the third and fourth rows of chips C3 and C4. After electrically connecting the chips C1, C2, C3, C4 and the substrate 30 with wires W1, W2, W3, W4, the chips and wires are sealed with the sealing layer 35, as shown in FIG. The semiconductor device 50 is completed.

Although the embodiments of the present disclosure have been described in detail above, the present invention is not limited to the above embodiments. For example, in the above embodiment, the case where the wafer W is divided into pieces by stealth dicing is illustrated, but the wafer W may be divided into pieces using a blade.

Example

Hereinafter, the present disclosure will be described in more detail based on examples, but the present invention is not limited to these examples. Additionally, unless otherwise specified, all drugs were reagents.

(Examples 1 and 2 and Comparative Examples 1 and 2)

<Preparation of adhesive varnish>

Cyclohexanone was added to the mixture consisting of component (A), component (B), and component (D) with the components and contents (unit: mass part) shown in Table 1, and the mixture was stirred and mixed. To this, component (C) was added and stirred in the components and contents (unit: parts by mass) shown in Table 1, then component (E) and component (F) were further added, and stirred until each component became uniform. , prepared an adhesive varnish. In addition, each component shown in Table 1 means the following, and the numerical value shown in Table 1 means the mass part of solid content.

(A) Ingredient: Epoxy resin

(A1) Component: Epoxy resin having a fluorene skeleton

(A1-1) PG-100 (brand name, manufactured by Osaka Gas Chemical Co., Ltd., epoxy resin with a fluorene skeleton, epoxy equivalent weight: 260 g/eq)

(A1-2) CG-500 (brand name, manufactured by Osaka Gas Chemical Co., Ltd., epoxy resin with a fluorene skeleton, epoxy equivalent weight: 310 g/eq)

(A2) Component: Epoxy resin without fluorene skeleton

(A2-1) N-500P-10 (brand name, manufactured by DIC Corporation, o-cresol novolac type epoxy resin, epoxy equivalent weight: 204 g/eq)

(A2-2) EXA-830CRP (brand name, Shin-Niptetsu Sumikin Chemical Co., Ltd., bisphenol F-type epoxy resin, epoxy equivalent weight: 159 g/eq)

(B) Ingredient: Hardener

(B-1) PSM-4326 (brand name, Gunei Kagaku Kogyo Co., Ltd., phenol novolac type phenolic resin, hydroxyl equivalent weight: 105 g/eq, softening point: 118 to 122°C)

(B-2) GPH-103 (brand name, manufactured by Nippon Kayaku Co., Ltd., phenylaralkyl type phenol resin, hydroxyl equivalent weight: 220 to 240 g/eq, softening point: 99 to 106°C)

(B-3) MEH-7800M (brand name, Meiwa Kasei Co., Ltd., phenol novolak-type phenol resin, hydroxyl equivalent weight: 175 g/eq, softening point: 78°C)

(C) Ingredient: Elastomer

(C-1) Methyl ethyl ketone solution of acrylic rubber (SG-P3 (trade name, manufactured by Nagase Chemtex Co., Ltd.)), an acrylic rubber in which some of the structural units of the acrylic rubber have been changed, weight average molecular weight: 80 Only, Tg: 12℃)

(D) Ingredient: Inorganic filler

(D-1) R972 (brand name, Nippon Aerosil Co., Ltd., silica particles, average particle size: 0.016 μm)

(D-2) SC2050-HLG (brand name, Admatex Co., Ltd., silica filler dispersion, average particle size: 0.50 μm)

(D-3) Prototype silica filler (prototype, manufactured by Admatex Co., Ltd., silica filler dispersion, average particle size: 0.2 μm)

(E) Ingredient: Coupling agent

(E-1) Y-9669 (brand name, Momentive Performance Materials Japan product, 3-phenylaminopropyltrimethoxysilane)

(E-2) A-189 (brand name, Nippon Unica Co., Ltd., γ-mercaptopropyltrimethoxysilane)

(E-3) Z-6119 (brand name, Toray Dow Corning Co., Ltd., Ureidopropyltriethoxysilane)

(F) Ingredient: Curing accelerator

(F-1) 2PZ-CN (brand name, Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole)

[Table 1]

<Production of adhesive film>

The produced adhesive varnish was filtered through a 100 mesh filter and vacuum degassed. As a support film, a 38-μm-thick polyethylene terephthalate (PET) film subjected to release treatment was prepared, and the adhesive varnish after vacuum defoaming was applied onto the PET film. The applied adhesive varnish was heated and dried in two stages: at 90°C for 5 minutes and then at 130°C for 5 minutes to form adhesive films of Examples 1 and 2 and Comparative Examples 1 and 2 in the B stage (thickness: 10 μm). ) was obtained.

<Production of dicing film>

[Synthesis of acrylic copolymer]

A copolymer was obtained by solution radical polymerization using the following components as raw materials and ethyl acetate as the solvent.

2-Ethylhexyl acrylic acid: 78 parts by mass

· 2-Hydroxyethyl acrylic acid: 20 parts by mass

·Methacrylic acid: 2 parts by mass

With respect to this acrylic copolymer, 8 parts by mass of 2-methacryloyloxyethyl isocyanate was reacted to synthesize a radiation-reactive acrylic copolymer having a carbon-carbon double bond. In the above reaction, 0.05 parts by mass of hydroquinone monomethyl ether was used as a polymerization inhibitor. The weight average molecular weight of the synthesized acrylic copolymer was measured by GPC and was found to be 800,000.

The acrylic copolymer obtained in this way, 8.0 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane, brand name: Colonate L) as a curing agent in terms of solid content, and 1-hydroxycyclohexylphenyl as a photopolymerization initiator. 0.5 parts by mass of ketone was mixed to prepare a radiation-curing adhesive solution. Next, the radiation-curing adhesive solution obtained as described above was applied and dried on a polyethylene terephthalate release film (thickness: 38 μm) so that the thickness after drying was 10 μm. After that, an ionomer resin film (Himilan 1855, 90 μm thick) obtained by crosslinking the intermolecular elements of an ethylene-methacrylic acid copolymer that had undergone corona discharge treatment on one side with metal ions was bonded to the adhesive layer. The bonded sample was aged in a constant temperature bath at 40°C for 72 hours to produce a dicing film.

<Production of integrated dicing/die bonding film>

By bonding the adhesive films according to Examples and Comparative Examples to the adhesive layer of the dicing film obtained as described above, the integrated dicing and die-bonding films according to Examples and Comparative Examples were obtained.

[Tick test]

A sample for performing a tack test was prepared in the following procedure.

(1) By irradiating ultraviolet rays from the dicing film side of the dicing/die bonding integrated film, the adhesive force of the dicing film was reduced. The ultraviolet irradiation conditions were as follows.

·Intensity of ultraviolet rays: 100mW/cm ²

·Irradiation amount of ultraviolet rays: 150mJ/cm ²

(2) An integrated dicing/die bonding film was laminated to the polyimide film so that the adhesive film was in contact with the surface of the polyimide film. The following was used as the polyimide film. The conditions for laminating were as follows.

(polyimide film)

・Kapton 500H (Product name, Toray DuPont Co., Ltd.)

·Thickness: 125μm

·Tensile modulus: 3.35GPa

·Heat resistance temperature: 270℃

(Laminate conditions)

Temperature: 65℃

·Speed: 5mm/sec

(3) After lamination, in order to increase the adhesion between the polyimide film and the adhesive film, the laminate was left at room temperature for one day.

(4) The laminated body was cut into a size of 40 mm long and 40 mm wide, and the dicing film was peeled off. As a result, a plurality of samples were obtained for Examples and Comparative Examples.

With the adhesive film on the upper surface, the sample was set on the stage of a tacking tester (TAC1000 (brand name), made by Reska Co., Ltd.). A tack test was performed on the adhesive films according to Examples and Comparative Examples under the following conditions.

·Stage temperature: 25℃

·Probe temperature: 100℃ or 120℃

Probe entry speed: 1.0 mm/sec

· Pressure force: 0.1MPa

· Pressurization time: 1.0 seconds

Probe separation speed: 1.0 mm/sec

· Probe tip surface: circular with a diameter of 5 mm

·Probe material: SUS304

For Examples and Comparative Examples, 9 measurements were performed each, and the average value of 7 measurements excluding the maximum and minimum values was taken as the average value (N/5 mm?). Table 2 shows the results.

[Table 2]

As shown in Table 2, the adhesive films of Examples 1 and 2 all satisfy conditions 1 and 2 and are judged to be good. The adhesive film of Comparative Example 1 does not satisfy both conditions 1 and 2. The adhesive film of Comparative Example 2 satisfies Condition 1, but does not satisfy Condition 2.

[Reproduction of peeling in the semiconductor device manufacturing process]

In order to reproduce peeling in the manufacturing process of a semiconductor device, the integrated dicing and die bonding film according to Example 1 was used, and an adhesive piece having the configuration shown in Fig. 4 was attached through the processes shown in Figs. 5 and 6. Made the chip. The size of the chip was as follows.

·Thickness: 36μm

·Height: 6mm

·Width: 12mm

A structure with the structure shown in FIG. 9 was produced using eight adhesive piece attachment chips. The structure 90 in FIG. 9 is comprised of a substrate 30, a silicon spacer 32, and eight layers of adhesive piece attachment chips S1 to S8. Two structures were produced under the following two conditions for pressing the adhesive piece-attached chip.

·120℃/15N/1sec

·120℃/7.5N/1sec

The structures according to Example 2 and Comparative Examples 1 and 2 were produced in the same manner as above, except that the integrated dicing/die bonding film according to Example 2 and Comparative Examples 1 and 2 was used. For the structures according to Examples and Comparative Examples, the separation distance (D) shown in FIG. 9 was measured to evaluate the adhesion of the first-stage adhesive piece attachment chip (S1) to the surface of the silicon spacer. Table 3 shows the results.

[Table 3]

The structures according to Examples 1 and 2 had a separation distance (D) of 30 μm or less, regardless of the thickness of the adhesive layer being 10 μm, and peeling could be suppressed. In contrast, the separation distance (D) of the structures of Comparative Examples 1 and 2 exceeded 30 μm, and peeling could not be sufficiently suppressed in an adhesive layer with a thickness of 10 μm. The evaluation results shown in Table 2 are consistent with the results shown in Table 3.

One… stage
2… probe
3… push jig
5… Polyimide film (resin film)
10… Device for conducting a tack test
11… base film
13… adhesive layer
15… adhesive layer
15c… Cured product of adhesive piece
15p… Adhesive piece
20… Dicing/die bonding integrated film
25… Adhesive piece attachment chip
30… Board
35… sealing layer
40… struct
50… semiconductor device
C, C1, C2, C3, C4… chip
S… sample
W… wafer

Claims (6)

A method for evaluating an adhesive film used in the manufacturing process of a semiconductor device, comprising:
Including the process of performing a tack test with a heated probe,
A method for evaluating an adhesive film, wherein the thickness of the adhesive film to be evaluated is 20 μm or less. In claim 1,
Using a device having a stage supporting a sample of the adhesive film and a probe capable of moving up and down with respect to the stage and capable of setting a temperature,
An evaluation method for an adhesive film, wherein the tack test is performed with a resin film interposed between the stage and the sample. In claim 1 or claim 2,
An evaluation method for an adhesive film, wherein the adhesive film is judged to be good when it satisfies both the following conditions 1 and 2.
(Condition 1) In the above tack test with the probe temperature set to 100°C, the tack is 2.5N/5mmϕ or more.
(Condition 2) In the above tack test with the probe temperature set to 120°C, the tack is 2.5N/5mmϕ or more. A process of preparing a laminated film containing an adhesive film with a thickness of 20 μm or less,
A step of attaching the laminated film to the wafer so that the adhesive film is in contact with the surface of the wafer;
A process of manufacturing a chip with an adhesive piece attached by separating the wafer and the adhesive film into pieces;
A process of adhering the adhesive piece attachment chip onto the surface of a substrate or another chip,
A method of manufacturing a semiconductor device, wherein the adhesive film is an adhesive film judged to be good in the evaluation method according to claim 3. An adhesive film used in the manufacturing process of a semiconductor device,
The thickness is less than 20μm,
An adhesive film that is judged to be good in the evaluation method according to claim 3. A base film,
An adhesive layer with a thickness of 20 μm or less,
The adhesive layer is provided in this order,
A dicing/die bonding integrated film wherein the adhesive layer is comprised of an adhesive film judged to be good in the evaluation method set forth in claim 3.

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