KR20230141343A - Apparatus for suppling chemical agent supply and substrate treatment apparatus with the apparatus - Google Patents

Abstract

The present invention relates to a chemical solution supply device, comprising: a pump for supplying a chemical solution to a nozzle that supplies the chemical solution on a substrate supported on a substrate support unit; and a bubble removal pipe connected between the nozzle and the pump to remove gas dissolved in the chemical solution, wherein the bubble removal pipe is a first pipe that is inclined so that its inner diameter narrows from one end to the other end. pipe; and a second pipe that is inclined so that the inner diameter becomes narrower from the top to the bottom, wherein the first pipe and the second pipe are connected in series so that the chemical liquid moves along the first pipe and the second pipe. When this happens, the gas dissolved in the chemical solution can be removed.

Description

Chemical supply device and substrate treatment apparatus having the same {Apparatus for suppling chemical agent supply and substrate treatment apparatus with the apparatus}

The present invention relates to a semiconductor device, and more specifically, to a chemical solution supply device and a substrate processing device having the same.

In order to manufacture semiconductor devices, various substrate processing devices are used to perform various processes. Among these semiconductor processes, the photo-lithography process is a process of forming a predetermined photoresist pattern on a substrate. This photolithography process may mainly include a coating process, a heat treatment process, an exposure process, and a development process, and is performed using a plurality of devices. Since this photolithography process determines the degree of integration of semiconductor devices, it is evaluated as a standard for judging semiconductor manufacturing process capabilities.

Recently, in order to achieve high integration and improve productivity of semiconductor devices, the coating process, heat treatment process, and development process are combined and automated in a single photo track device. Furthermore, the exposure device is also arranged in-line with the photo track device so that the above-described processes can be performed continuously, thereby greatly improving productivity.

In addition to the increase in diameter of substrates, processing efficiency is decreasing as the robots that transport the substrates for the coating process within the photo track device and the substrates for the development process interfere with each other. Accordingly, in order to reduce this interference, photo track equipment with a multi-layer structure that separates the coating process and the developing process into layers is being developed.

Meanwhile, in order to perform the coating process and other processes, the chemical solution applied on the substrate is distributed on the surface of the substrate in a certain amount by a chemical solution supply device. The chemical solution supply device includes a tank that stores the chemical solution. The outside of the tank is surrounded by a pressurized tank that supplies the chemical solution by pressurizing gas, and the chemical solution is supplied onto the substrate along the pipe by the gas pressurized by the pressurization tank.

However, when using a method of supplying a chemical solution by pressurizing gas, there are cases where bubbles are generated in the chemical solution or bubbles are formed within the chemical solution itself. Additionally, bubbles may occur for various reasons, such as loose connections within the chemical piping or when bubbles are not completely removed when changing the chemical. When a chemical solution containing such bubbles is applied on a substrate and then subjected to post-processing, the bubbles cause defects or process troubles, thereby disrupting productivity.

The present invention is intended to solve various problems including the above problems, and provides a chemical solution supply device capable of removing bubbles generated in the chemical solution when using a method of supplying a chemical solution by pressurizing gas, and a substrate processing device having the same. The purpose is to provide. However, these tasks are illustrative and do not limit the scope of the present invention.

A chemical supply device according to the spirit of the present invention for solving the above problems includes a pump that supplies a chemical solution to a nozzle that supplies the chemical solution on a substrate supported on a substrate support unit; and a bubble removal pipe connected between the nozzle and the pump to remove gas dissolved in the chemical solution, wherein the bubble removal pipe is a first pipe that is inclined so that its inner diameter narrows from one end to the other end. pipe; and a second pipe that is inclined so that the inner diameter becomes narrower from the top to the bottom, wherein the first pipe and the second pipe are connected in series so that the chemical liquid moves along the first pipe and the second pipe. When this happens, the gas dissolved in the chemical solution can be removed.

Additionally, according to the present invention, a bubble exhaust port may be formed at the top of the second pipe to discharge the gas to the outside.

Additionally, according to the present invention, a chemical discharge prevention portion may be formed in the bubble exhaust port to prevent a portion of the chemical liquid from being discharged to the outside.

Additionally, according to the present invention, the chemical discharge prevention portion may be formed to be inclined at a predetermined angle based on the discharge direction.

Additionally, according to the present invention, the chemical discharge prevention portion may be formed to be inclined upward from one end connected to the inner peripheral surface of the bubble exhaust port to the other end, based on the discharge direction.

Additionally, according to the present invention, a plurality of chemical discharge prevention units may be arranged in a zigzag shape at the bubble exhaust port.

In addition, according to the present invention, when the chemical liquid moves along the inner wall of the second pipe, a swirling flow is generated within the second pipe, so that bubbles present in the chemical liquid can be discharged through the bubble exhaust port. .

Additionally, according to the present invention, the nozzle is connected to one end of the second pipe,

The diameter of the chemical discharge port at the portion where the second pipe is connected to the nozzle may be relatively larger than the diameter of the bubble exhaust port.

Additionally, according to the present invention, the bubble exhaust port may be connected to a gas tank disposed at the tip of the pump.

In addition, according to the present invention, the gas dissolved in the chemical solution can be bubbled by controlling the speed of the chemical solution passing through the first pipe to be relatively faster than the speed of the chemical solution before passing through the first pipe. there is.

In addition, according to the present invention, the gas dissolved in the chemical solution can be bubbled by controlling the pressure of the chemical solution passing through the first pipe to be relatively lower than the pressure of the chemical solution before passing through the first pipe. there is.

Additionally, according to the present invention, the diameter of the second pipe may be relatively larger than the diameter of the first pipe.

A substrate processing apparatus according to the spirit of the present invention for solving the above problems includes a nozzle for supplying a chemical solution onto a substrate supported on a substrate support unit; and a chemical solution supply device capable of supplying a chemical solution to the nozzle, wherein the chemical solution supply device includes: a pump for supplying a chemical solution to the nozzle; and a bubble removal pipe connected between the nozzle and the pump to remove gas dissolved in the chemical solution, wherein the bubble removal pipe is a first pipe that is inclined so that its inner diameter narrows from one end to the other end. pipe; and a second pipe that is inclined so that the inner diameter becomes narrower from the top to the bottom, wherein the first pipe and the second pipe are connected in series so that the chemical liquid moves along the first pipe and the second pipe. When this happens, the gas dissolved in the chemical solution can be removed.

Additionally, according to the present invention, a bubble exhaust port may be formed at the top of the second pipe to discharge the gas to the outside.

Additionally, according to the present invention, a chemical discharge prevention portion may be formed in the bubble exhaust port to prevent a portion of the chemical liquid from being discharged to the outside.

In addition, according to the present invention, when the chemical liquid moves along the inner wall of the second pipe, a swirling flow is generated within the second pipe, so that bubbles present in the chemical liquid can be discharged through the bubble exhaust port. .

Additionally, according to the present invention, the bubble exhaust port may be connected to a gas tank disposed at the tip of the pump.

Additionally, according to the present invention, the diameter of the second pipe may be relatively larger than the diameter of the first pipe.

According to various embodiments of the present invention made as described above, in order to remove bubbles generated inside the chemical solution supply device, the diameter of the pipe connected to the nozzle that supplies the chemical solution is controlled to be different, thereby It has the effect of removing contained bubbles. Of course, the scope of the present invention is not limited by this effect.

1 is a schematic plan view showing a substrate processing facility according to an embodiment of the present invention.
Figure 2 is a schematic cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
Figure 3 is a schematic diagram showing a chemical solution supply device according to an embodiment of the present invention.
Figures 4 and 5 are schematic diagrams showing a process for removing bubbles contained in a chemical solution according to the structure of a chemical solution supply pipe according to an embodiment of the present invention.

Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art, and the following examples may be modified into various other forms, and the scope of the present invention is as follows. It is not limited to examples. Rather, these embodiments are provided to make the present disclosure more faithful and complete and to fully convey the spirit of the present invention to those skilled in the art. Additionally, the thickness and size of each layer in the drawings are exaggerated for convenience and clarity of explanation.

The terms used herein are used to describe specific embodiments and are not intended to limit the invention. As used herein, the singular forms include the plural forms unless the context clearly indicates otherwise. Additionally, when used herein, “comprise” and/or “comprising” means specifying the presence of stated features, numbers, steps, operations, parts, elements and/or groups thereof. and does not exclude the presence or addition of one or more other shapes, numbers, operations, parts, elements and/or groups.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will now be described with reference to drawings that schematically show ideal embodiments of the present invention. In the drawings, variations of the depicted shape may be expected, for example, depending on manufacturing technology and/or tolerances. Accordingly, embodiments of the present invention should not be construed as being limited to the specific shape of the area shown in this specification, but should include, for example, changes in shape resulting from manufacturing.

1 is a schematic plan view showing a substrate processing facility according to an embodiment of the present invention.

Referring to FIG. 1 , the substrate processing facility 10 includes an index module 100 and a process processing module 200. The index module 100 includes a load port 120 and a transfer frame 140. The load port 120, the transfer frame 140, and the process processing module 200 may be arranged sequentially. In this specification, the direction in which the load port 120, the transfer frame 140, and the process processing module 200 are arranged is the first direction 12 (or x-axis direction), the first direction 12 when viewed from the top. ) in the direction perpendicular to the second direction 14 (or y-axis direction), and in the direction perpendicular to the plane (xy plane) including the first and second directions 12 and 14 in the third direction 16 (or , z-axis direction).

The carrier 130 containing the substrate W is seated in the load port 120. A plurality of load ports 120 may be arranged along the second direction 14. The number of load ports 120 may increase or decrease depending on the process efficiency and production efficiency of the process module 200. The carrier 130 may be a Front Opening Unified Pod (FOUP), and a slot may be formed inside the carrier 130 to horizontally accommodate a plurality of substrates W.

The processing module 200 includes a buffer unit 220, a transfer chamber 240, and a process chamber 260. The transfer chamber 240 may extend parallel to the first direction 12, and process chambers 260 may be disposed on both sides in the longitudinal direction. Additionally, some of the process chambers 260 may be arranged in a stacked manner. Meanwhile, the process chambers 260 may be disposed on only one side of the transfer chamber 240.

The buffer unit 220 is disposed between the transfer frame 140 and the transfer chamber 240 and provides a space for the substrate W to stay before being transferred between the transfer frame 140 and the transfer chamber 240. A slot in which the substrate W is placed is formed inside the buffer unit 220. The buffer unit 220 may be open to the transfer frame 140 and the transfer chamber 240, or may be formed to be open and closed.

The transfer frame 140 may transport the substrate W between the carrier 130 and the buffer unit 220. The transport frame 140 is provided with an index rail 142 and an index robot 144. The index rail 142 extends parallel to the second direction 14, and an index robot 144 is installed so that it can move along the second direction 14. The index robot 144 includes a base 144a, a body 144b, and an index arm 144c. The base 144a is installed to be movable along the index rail 142. The body 144b is coupled to the base 144a and is installed to be movable and rotatable along the third direction 16 on the base 144a. The index arm 144c is coupled to the body 144b and is provided to move forward and backward with respect to the body 144b. A plurality of index arms 144c may be provided and each may be individually driven. Each index arm 144c may be used to transport the substrate W from the carrier 130 to the process module 200 or from the process module 200 to the carrier 130.

The transfer chamber 240 transfers the substrate W between the buffer unit 220 and the process chamber 260 or between the process chambers 260. The transfer chamber 240 is provided with a guide rail 242 and a main robot 244. The guide rail 242 extends parallel to the first direction 12, and the main robot 244 is installed so that it can move along the first direction 12. The main robot 244 includes a base 244a, a body 244b, and a main arm 244c. The base 244a is installed to be movable along the guide rail 242. The body 244b is coupled to the base 244a and is installed to be movable and rotatable along the third direction 16 on the base 244a. The main arm 244c is coupled to the body 244b and is provided to move forward and backward with respect to the body 244b. A plurality of main arms 244c are provided and each can be individually driven.

The process chamber 260 is provided with a substrate processing device 300 (see FIG. 2) that performs a process on the substrate W. The substrate processing apparatus 300 may have different structures depending on the process being performed. Meanwhile, the substrate processing apparatus 300 in each process chamber 260 may have the same structure, and the substrate processing apparatus 300 in the process chamber 260 belonging to the same group may have the same structure.

The substrate processing apparatus 300 (see FIG. 2) can perform a heating process to heat the substrate W and a cooling process to cool the substrate W. Additionally, the substrate processing apparatus 300 (see FIG. 2) can perform a cleaning process of treating the substrate W with a liquid. In addition, in this specification, the substrate processing apparatus 300 is described as an example of a heating device, but it is not limited thereto, and the substrate processing apparatus may also be applied to an etching device, a photolithography device, etc.

Figure 2 is a schematic cross-sectional view showing a substrate processing apparatus 300 according to an embodiment of the present invention. The substrate processing device 300 may be used as a coating device for applying photoresist on the substrate (W), or may be used as a cleaning device for the substrate (W).

Referring to FIG. 2, the substrate processing apparatus 300 includes a housing 310, a processing container unit 320, an elevation unit 330, a substrate support unit 340, a support drive unit 350, a base unit 360, and a liquid It includes a discharge unit 370 and an airflow supply unit 380.

Housing 310 provides an internal space. An opening (not shown) is formed on one side of the housing 310 and can be used as a passage through which the substrate W is carried in and out. A door (not shown) is installed in the opening to open and close the opening. During the substrate processing process, the opening is blocked and the internal space of the housing 310 is sealed. Exhaust ports 315 and 316 are formed on one side of the housing 310, so that the airflow formed within the housing 310 can be exhausted to the outside.

The processing container unit 320 provides a space where a substrate processing process is performed. The processing container unit 320 has an open top. The processing container unit 320 includes a plurality of recovery bins 322, 324, and 326. In one embodiment of the present invention, it is assumed that there are three first, second, and third recovery bins 322, 324, and 326, but the number of recovery bins can be increased or decreased. The recovery bins 322, 324, and 326 are provided to be spaced apart along the vertical direction (or third direction 16). Additionally, the recovery bins 322, 324, and 326 are provided so that they can be stacked up and down. Each of the first recovery tank 322, the second recovery tank 324, and the third recovery tank 326 can recover different treatment liquids among the treatment liquids used in the process. The processing container unit 320 is provided with at least one inlet space (R1, R2, R3) formed in the vertical direction (or third direction 16) into which the processing liquid that has processed the substrate can flow.

The first recovery container 322 surrounds the substrate support 340, the second recovery container 324 surrounds the first recovery container 322, and the third recovery container 326 surrounds the second recovery container 324. It can be arranged to surround. The recovery bins 322, 324, and 326 are provided in an annular ring shape. The inner space (R1) of the first recovery container (322), the space (R2) between the first recovery container (322) and the second recovery container (324), the second recovery container (324) and the third recovery container (326) ) functions as an inflow space (R1, R2, R3) into which the treatment liquid flows. Each recovery tube (322, 324, and 326) has a recovery pipe extending below the bottom portion, so that the treatment liquid flowing into the inflow spaces (R1, R2, and R3) can be discharged. The discharged treated liquid can be reused through an external treated liquid regeneration system (not shown).

The lifting unit 330 is coupled to the recovery containers 322, 324, and 326 to elevate the recovery containers 322, 324, and 326. The first lifting unit 332 is connected to the first recovery bin 322, the second lifting unit 334 is connected to the second recovery bin 324, and the third lifting unit 336 is connected to the third recovery bin 326. do. Each of the lifting units 332, 334, and 336 is connected to each driving unit 333, 335, and 337 to receive driving force for up and down movement. The lifting unit 330 can control the height of each recovery container 322, 324, and 326 to adjust the size, height, and position of the inlet spaces R1, R2, and R3.

The substrate supporter 340 supports and rotates the substrate W in the internal space of the housing 310. The substrate support unit 340 is disposed in a space inside the processing container unit 320. The substrate support part 340 includes a rotating support plate 341 and a fixed support plate 342.

The rotation support plate 341 has a substantially circular upper edge when viewed from the top. The rotating support plate 341 is located in an area outside the fixed support plate 342. The rotation support plate 341 is rotated by the support drive unit 350. A support pin 346 and a chuck pin 347 are provided on the rotation support plate 341. The fixed support plate 342 has a substantially circular upper edge when viewed from the top. The fixed support plate 342 is located in the central area of the substrate support portion 340.

The support drive unit 350 may rotate or lift the substrate support unit 340. The support drive unit 350 is connected to the rotation support plate 341 of the substrate support unit 340. The support drive unit 350 includes a drive shaft unit 352 and a driver 354. The drive shaft portion 352 is rotated by the driver 354 to rotate the rotation support plate 341. Additionally, the drive shaft portion 352 may be moved or expanded in the vertical direction by the driver 354 to adjust the height of the substrate support portion 340.

The base portion 360 surrounds the processing container portion 320 and is provided in a cylindrical shape with an open top. The base portion 360 includes a bottom portion 361 and a wall portion 363. The base portion 360 is provided in a cup shape. The bottom portion 361 is provided in a disk shape and can be connected to an exhaust pipe 365. The wall portion 363 extends in a vertical direction from the side end of the bottom portion 361. The base portion 360 may be made of a highly acid-resistant resin material. The base portion 360 substantially functions as the entire outer wall of the processing container portion 320.

The liquid discharge unit 370 (or front liquid discharge unit 370) supplies processing liquid to the substrate W during the substrate processing process. The liquid discharge unit 370 supplies processing liquid to the front surface of the substrate W. The liquid discharge unit 370 is composed of a nozzle 372 and a pipe 374 capable of supplying treatment liquid, and one end of the liquid discharge unit 370 is connected to a chemical liquid supply device 400 (see FIG. 3) to be described later. do. A bubble removal pipe 376 is connected to a portion of the pipe 374 to remove bubbles remaining in the treatment liquid. A detailed description of the bubble removal pipe 376 will be described later with reference to FIGS. 3 to 5.

As an example, a processing liquid such as photoresist may be discharged from the nozzle 372 provided in the liquid discharge unit 370 and coated on the entire surface of the substrate W. As another example, an organic solvent such as IPA may be discharged from the nozzle 372 provided in the liquid discharge unit 370 to dry the entire surface of the substrate W.

The airflow supply unit 380 forms a downward airflow in the internal space of the housing 310. The airflow supply unit 380 includes a fan 382, an airflow supply line 384, and a filter 386. The fan 382 is installed on the upper part of the housing 310 to form a downward airflow in the inner space of the housing 310. The airflow supply line 384 supplies external air to the housing 310. The filter 386 filters impurities contained in the air.

The exhaust ports 315 and 316 are connected to a gas exhaust device (not shown). Each of the exhaust ports 315 and 316 is respectively connected to the main exhaust line (not shown) of the gas exhaust device (not shown). Additionally, the exhaust ports 315 and 316 of the plurality of substrate processing devices 300 may be respectively connected to the main exhaust line (not shown) of the gas exhaust device (not shown). Figure 3 illustrates two exhaust ports 315 and 316, but the number of exhaust ports can be increased or decreased depending on the type of chemical liquid, type of process by-product, etc., and each exhaust port is connected to the main exhaust line (not shown) of the gas exhaust device (not shown). It can be connected to .

Figure 3 is a schematic diagram showing a chemical solution supply device according to an embodiment of the present invention.

Referring to FIG. 3, the chemical solution supply device 400 supplies the chemical solution to the nozzle 372 within the substrate processing apparatus 300. The chemical liquid supply device 400 includes a chemical liquid storage unit 402, a first chemical liquid supply unit 404, and a second chemical liquid supply unit 406.

First, the chemical liquid storage unit 402 includes a chemical liquid source 410 and a trap tank 420. The chemical solution source 410 stores the chemical solution. The chemical solution source 410 has a receiving space in which the chemical solution is accommodated. The chemical solution source 410 may be a bottle containing a treatment solution. In one example, the chemical solution may be a photosensitive solution containing fluorine (F).

The chemical liquid supply line 460 supplies chemical liquid from the chemical liquid supply source 410 to the nozzle 372. The trap tank 420 primarily removes bubbles in the chemical solution flowing in the chemical solution supply line 460. The trap tank 420 is located between the nozzle 372 and the chemical solution supply source 410 in the chemical solution supply line 460.

A first chemical solution supply part 404 and a second chemical solution supply part 406 are located between the chemical solution supply line 460 and the chemical solution storage unit 402. The first chemical solution supply unit 404 and the second chemical solution supply part 406 may add chemical treatment to the chemical solution supplied from the chemical solution storage unit 402.

The first chemical supply unit 404 includes a first buffer tank 452, a filter 450, and a degas module 454. The chemical solution supplied from the trap tank 420 waits in the first buffer tank 452 and is then transferred to the degas module 454 through the filter 450.

The first buffer tank 452 stores the chemical solution supplied from the trap tank 420. Later, in order to transfer the chemical liquid to the filter 450, the first buffer tank 452 is pressurized using N ₂ gas to transfer the chemical liquid to the subsequent process unit. When N ₂ is pressurized, N ₂ gas is dissolved in the chemical solution. The chemical solution in which N ₂ gas is dissolved is transferred through the filter 450 and the degas module 454.

However, when the N ₂ gas dissolved in the chemical solution is not completely removed, the dissolved N ₂ gas bubbles through the valve and fitting, causing defects in the semiconductor substrate (W) when coating the chemical solution. do.

The filter 450 filters impurities in the treatment liquid flowing through the chemical liquid supply line 460. As the chemical solution passes through the filter 450, impurities are filtered out. For example, the chemical solution may flow into one end of the filter 450 and flow out of the other end. A plurality of perforations are formed between one end and the other end of the filter 450. These perforations have a collection size. That is, impurities larger than the collection size are filtered by the filter 450.

The chemical solution from which impurities have been filtered by the filter 450 is transferred to the degas module 454. The degas module 454 can perform vacuum degassing to remove dissolved gases inside the chemical solution.

Additionally, the second chemical supply unit 406 includes a second buffer tank 442, a gas tank 444, a chemical pump 440, and a valve 470.

The second buffer tank 442 stores the vacuum degassed chemical solution until the coating process begins. As the chemical solution is stored in the second buffer tank 442 in a standby state for a long time, there is a possibility that the O ₂ gas in contact with the chemical solution may be partially dissolved. Similar to the first chemical solution supply unit 404, O ₂ gas dissolved in the chemical solution bubbles and serves as a cause of defective coating process.

The chemical liquid is supplied to the nozzle 372 by the chemical liquid pump 440 and the valve 470. Specifically, the chemical liquid pump 440 pressurizes the chemical liquid supply line 460 so that the processing liquid flowing in the chemical liquid supply line 460 is supplied in a direction toward the nozzle 372. The chemical liquid supplied from the chemical liquid pump 440 is supplied to the nozzle 372 by opening and closing the valve 470.

That is, when N2 is pressurized in the first buffer tank 452 in the section of the first chemical solution supply unit 404, N2 gas is dissolved in the chemical solution, and the dissolved N2 gas is not completely removed even by the filter. In addition, as the chemical solution is stored for a long time in the section of the second chemical solution supply section 406, a certain portion of the O2 gas in contact with the chemical solution is dissolved in the chemical solution. At this time, O2 gas along with N2 gas is dissolved in the chemical solution, and when the chemical solution is transported along the chemical solution supply line 460, the dissolved gas may bubble and cause a defect in the coating process.

To solve this problem, in the present invention, a bubble removal pipe 376 was formed between the valve 470 installed in the chemical liquid supply line 460 and the liquid discharge part 370. Hereinafter, the bubble removal pipe 376 of the present invention will be described in detail with reference to FIGS. 4 and 5.

Figures 4 and 5 are schematic diagrams showing a process for removing bubbles contained in a chemical solution according to the structure of a chemical solution supply pipe according to an embodiment of the present invention.

Referring to Figures 4 and 5, the bubble removal pipe 376 is connected between the nozzle 372 and the chemical liquid pump 440 to remove gas dissolved in the chemical liquid (Photoesist, hereinafter referred to as PR). The bubble removal pipe 376 includes a first pipe 377 that is inclined so that the inner diameter becomes narrower from one end to the other, and a second pipe 378 that is inclined so that the inner diameter becomes narrower from the top to the bottom. .

For example, the first pipe 377 and the second pipe 378 are connected in series so that when the chemical liquid (PR) moves along the first pipe 377 and the second pipe 378, it is within the chemical liquid (PR). Dissolved gases can be removed. The first pipe 377 and the second pipe 378 may be connected at right angles to each other.

In order to remove gas bubbles in the chemical solution (PR), the flow rate of the chemical solution (PR) flowing in the pipe is important. The flow rate of the chemical solution (PR) immediately before being supplied to the nozzle 372 must be controlled to be faster than the flow rate of the chemical solution (PR) before the bubble removal pipe 376. For this purpose, the bubble removal pipe 376 used the first pipe 377 in the form of an orifice to more quickly control the flow rate of the chemical solution (PR).

In order to quickly control the flow rate of the chemical solution (PR), the first pipe 377 is designed so that the diameter of one end through which the chemical solution (PR) flows is larger than the diameter of the end through which the chemical solution (PR) flows out. As the chemical liquid (PR) passes through a pipe with a gradually narrowing diameter, the speed of the chemical liquid (PR) increases. At this time, the pressure of the chemical liquid (PR) can be lowered (pressure reduction) to bubble the gas dissolved in the chemical liquid (PR). there is.

The chemical solution (PR) that has passed through the first pipe 377 may pass through the second pipe 378, which has a similar structure to the first pipe 377. The first pipe 377 is formed in the x-axis direction, and the second pipe 378 is connected in the z-axis direction perpendicular to the first pipe 377.

The diameter of the second pipe 378 is relatively larger than the diameter of the first pipe 377, and a swirling flow may be generated as the chemical solution (PR) is transferred within the second pipe 378. A portion (lower part of the second pipe 378) opposite to the portion where the second pipe 378 and the first pipe 377 are connected to each other is connected to the nozzle 372. The nozzle 372 is connected to one end of the second pipe 378, and the diameter of the chemical discharge port at the portion where the second pipe 378 is connected to the nozzle 372 is relatively larger than the diameter of the bubble exhaust port 379. It can be.

A bubble exhaust port 379 is formed at the top of the second pipe 378 to allow gas dissolved in the chemical solution PR to be discharged to the outside. When the chemical liquid (PR) moves along the inner wall of the second pipe 378, a swirling flow is generated within the second pipe 378, thereby discharging air bubbles present in the chemical liquid (PR) through the bubble exhaust port 379. can do. Here, a chemical discharge prevention portion 379B is formed in the bubble exhaust port 379 to prevent a portion of the chemical liquid PR from being discharged to the outside.

The chemical discharge prevention portion 379B may be formed to be inclined at a predetermined angle based on the discharge direction in which the bubbled gas is discharged. The chemical discharge prevention portion 379B may be formed at a bubble exhaust port 379 based on the discharge direction. It may be formed to slope upward from one end connected to the inner peripheral surface of the to the other end. Additionally, a plurality of chemical discharge prevention units 379B may be arranged in a zigzag shape on the inner wall of the bubble exhaust port 379.

Meanwhile, one end of the trap tank 420, the first buffer tank 452, the filter 450, the second buffer tank 442, and the gas tank 444 is capable of collecting gas and discharging it to the outside. It is connected to the drain tank 472. Here, the gas tank 444 is disposed at the tip of the chemical pump 440 and is connected to one end of the bubble exhaust port 379 provided in the second pipe 378. The bubbled gas collected in the second pipe 378 is transferred to the gas tank 444 through the bubble exhaust port 379 and discharged to the drain tank 472.

As described above, the pressure of the chemical solution is first lowered through the orifice-shaped first pipe 377 to bubble the dissolved gas, and then secondarily a swirling flow is generated through the inclined pipe to reduce the relative specific gravity. Small air bubbles are collected in the center of the swirling flow. Afterwards, the collected bubbles can be discharged to the outside by applying back pressure to a vent hole (not shown) provided in the bubble exhaust port 379. Here, the configuration for applying back pressure means connecting the gas tank 444 and the second pipe 378 and discharging air bubbles using the pressure difference between the gas tank 444 and the second pipe 378, which is atmospheric pressure. do. In order to apply back pressure as described above, the diameter of the chemical solution (PR) discharge port of the second pipe 378 must be controlled to be relatively larger than the diameter of the vent hole (not shown).

The present invention has been described with reference to the embodiments shown in the drawings, but these are merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the attached patent claims.

10: Substrate processing equipment
100: Index module
200: Process processing module
300: Substrate processing device
370: Liquid discharge part
372: nozzle
374: Plumbing
376: Bubble removal piping
377: 1st pipe
378: Second pipe
379: bubble exhaust
379B: Chemical discharge prevention unit
380: Airflow supply unit
402: Chemical liquid storage unit
400: Chemical solution supply device
404: First chemical solution supply unit
406: Second chemical supply unit
410: Chemical solution source
420: Trap tank
440: Chemical pump
442: second buffer tank
444: Gas tank
450: filter
452: first buffer tank
454: Degas module
460: Chemical supply line
470: valve

Claims (18)

A pump that supplies a chemical solution to a nozzle that supplies the chemical solution on the substrate supported on the substrate support unit; and
It includes a bubble removal pipe connected between the nozzle and the pump to remove gas dissolved in the chemical solution,
The bubble removal pipe is,
A first pipe that is inclined so that its inner diameter becomes narrower from one end to the other end; and
It includes a second pipe that is inclined so that the inner diameter becomes narrower from the top to the bottom,
The first pipe and the second pipe are connected in series to remove gas dissolved in the chemical solution when the chemical solution moves along the first pipe and the second pipe,
Chemical solution supply device. According to claim 1,
A bubble exhaust port is formed at the top of the second pipe to discharge the gas to the outside.
Chemical solution supply device. According to claim 2,
A chemical discharge prevention portion is formed in the bubble exhaust port to prevent part of the chemical liquid from being discharged to the outside.
Chemical solution supply device. According to claim 3,
The chemical discharge prevention portion is formed to be inclined at a predetermined angle based on the discharge direction,
Chemical solution supply device. According to claim 4,
The chemical discharge prevention unit,
Based on the discharge direction, it is formed to slope upward from one end connected to the inner peripheral surface of the bubble exhaust port to the other end,
Chemical solution supply device. According to claim 3,
The chemical discharge prevention unit,
A plurality of bubbles are arranged in a zigzag shape in the bubble exhaust port.
Chemical solution supply device. According to claim 2,
When the chemical liquid moves along the inner wall of the second pipe, a swirling flow is generated within the second pipe, thereby discharging bubbles present in the chemical liquid through the bubble exhaust port.
Chemical solution supply device. According to claim 1,
The nozzle is connected to one end of the second pipe,
The diameter of the chemical discharge port at the portion where the second pipe is connected to the nozzle is relatively larger than the diameter of the bubble exhaust port,
Chemical solution supply device. According to claim 1,
The bubble exhaust port is connected to a gas tank disposed at the tip of the pump,
Chemical solution supply device. According to claim 1,
By controlling the speed of the chemical solution passing through the first pipe to be relatively faster than the speed of the chemical solution before passing through the first pipe, the gas dissolved in the chemical solution is bubbled.
Chemical solution supply device. According to claim 1,
By controlling the pressure of the chemical solution passing through the first pipe to be relatively lower than the pressure of the chemical solution before passing through the first pipe, the gas dissolved in the chemical solution is bubbled.
Chemical solution supply device. According to claim 1,
The diameter of the second pipe is relatively larger than the diameter of the first pipe,
Chemical solution supply device. a nozzle for supplying a chemical solution onto a substrate supported on a substrate support unit; and
It includes a chemical solution supply device capable of supplying the chemical solution to the nozzle,
The chemical solution supply device,
a pump supplying a chemical solution to the nozzle; And a bubble removal pipe connected between the nozzle and the pump to remove gas dissolved in the chemical solution,
The bubble removal pipe is,
A first pipe that is inclined so that its inner diameter becomes narrower from one end to the other end; and
It includes a second pipe that is inclined so that the inner diameter becomes narrower from the top to the bottom,
The first pipe and the second pipe are connected in series to remove gas dissolved in the chemical solution when the chemical solution moves along the first pipe and the second pipe,
Substrate processing equipment. According to claim 13,
A bubble exhaust port is formed at the top of the second pipe to discharge the gas to the outside.
Substrate processing equipment. According to claim 14,
A chemical discharge prevention portion is formed in the bubble exhaust port to prevent part of the chemical liquid from being discharged to the outside.
Substrate processing equipment. According to claim 14,
When the chemical liquid moves along the inner wall of the second pipe, a swirling flow is generated within the second pipe, thereby discharging bubbles present in the chemical liquid through the bubble exhaust port.
Substrate processing equipment. According to claim 14,
The bubble exhaust port is connected to a gas tank disposed at the tip of the pump,
Substrate processing equipment. According to claim 13,
The diameter of the second pipe is relatively larger than the diameter of the first pipe,
Substrate processing equipment.