KR20230116660A - Curable resin film, composite sheet, semiconductor chip, and method for manufacturing semiconductor chip - Google Patents

Abstract

A curable resin film used to form a cured resin film as a protective film on both the bump formation surface and side surfaces of a semiconductor chip having a bump formation surface with bumps, wherein the curable resin film is fractured at 70°C after curing A curable resin film having an energy of 10.0 MJ/m ³ or less.

Description

Curable resin film, composite sheet, semiconductor chip, and manufacturing method of semiconductor chip

The present invention relates to a method for manufacturing a curable resin film, a composite sheet, a semiconductor chip, and a semiconductor chip. More specifically, the present invention relates to a curable resin film and a composite sheet comprising the curable resin film, a semiconductor chip in which a cured resin film is formed as a protective film by using these, and a method for manufacturing the semiconductor chip. .

In recent years, manufacturing of semiconductor devices using a mounting method called a so-called face-down method has been performed. In the face-down method, a semiconductor chip having bumps on its circuit surface and a substrate for mounting the semiconductor chip are laminated so that the circuit surface of the semiconductor chip and the substrate face each other, and the semiconductor chip is mounted on the substrate. .

In addition, the said semiconductor chip is normally obtained by individualizing a semiconductor wafer which has bumps on the circuit surface.

A protective film may be formed on a semiconductor wafer having bumps for the purpose of protecting a junction between the bumps and the semiconductor wafer (hereinafter also referred to as "bump neck").

For example, in Patent Literature 1 and Patent Literature 2, a laminate in which a supporting base material, an adhesive layer, and a thermosetting resin layer are laminated in this order is formed by using the thermosetting resin layer as a bonding surface, and forming bumps. After pressurizing and attaching to the bump formation surface of the provided semiconductor wafer, the protective film is formed by heating and hardening the said thermosetting resin layer.

Japanese Unexamined Patent Publication No. 2015-092594 Japanese Unexamined Patent Publication No. 2012-169484

In the methods described in Patent Literature 1 and Patent Literature 2, after forming a protective film on a wafer with bumps, the wafer with bumps is diced together with the protective film to obtain a semiconductor chip separated into pieces. In the case of dicing a wafer with bumps formed in this way together with a protective film, the cut surface of the protective film by the dicing blade has good processing quality.

However, as a result of intensive studies by the present inventors, when a protective film is formed on both the bump formation surface and the side surface of a semiconductor chip having a bump formation surface with bumps, the processing quality of the cut surface of the protective film by the dicing blade is poor. I came to discover the problem of deterioration.

The present invention has been made in view of the above problem, and is used to form a cured resin film as a protective film on both the bump formation surface and side surface of a semiconductor chip having a bump formation surface with bumps, and processing quality after grinding and chipping. It aims at providing this excellent curable resin film, the composite sheet provided with the said curable resin film, a semiconductor chip, and the manufacturing method of the said semiconductor chip.

As a result of intensive studies to solve the above problems, the inventors of the present invention have found that, when forming a protective film on both the bump formation surface and side surface of a semiconductor chip having a bump formation surface with bumps, a wafer is cut by a dicing blade. It has been found that since only the protective film is cut without cutting, the processing quality of the cut surface of the protective film with the dicing blade deteriorates. In order to solve this problem, this inventor paid attention to the physical properties of the curable resin film for forming a protective film, and advanced further intensive examination. As a result, by using a curable resin film having a breaking energy at 70°C after curing of a specific value or less for forming a protective film for a semiconductor chip, it was found that the above problems could be solved, and the present invention was completed.

That is, the present invention relates to the following.

[1] A curable resin film used to form a cured resin film as a protective film on both the bump formation surface and side surface of a semiconductor chip having a bump formation surface with bumps,

The curable resin film whose breaking energy at 70°C after curing of the curable resin film is 10.0 MJ/m ³ or less.

[2] The curable resin film according to the above [1], having a thickness of 30 μm or more.

[3] A composite sheet having a laminated structure in which the curable resin film according to [1] or [2] above and a release sheet are laminated.

[4] The composite sheet according to [3] above, wherein the release sheet has a substrate and a release layer, and the release layer faces the curable resin film.

[5] The composite sheet according to the above [4], further comprising an intermediate layer between the base material and the release layer.

[6] The composite sheet according to [4] or [5] above, wherein the release layer is a layer formed of a composition containing an ethylene-vinyl acetate copolymer.

[7] The following steps (S1) to (S4) are included in this order,

Step (S1): Step of preparing a wafer for semiconductor chip manufacturing in which grooves as division lines are formed on the bump formation surface of a semiconductor wafer having a bump formation surface with bumps without reaching the back surface

Step (S2): Pressing and attaching the curable resin film according to [1] or [2] above to the bump formation surface of the wafer for semiconductor chip production, and applying the bump formation surface of the wafer for semiconductor chip production to the curable resin Step of covering with a film and burying the curable resin film in the groove formed in the wafer for semiconductor chip manufacturing

Step (S3): A step of curing the curable resin film to obtain a semiconductor chip manufacturing wafer having a cured resin film formed thereon

Step (S4): A step of singling the semiconductor chip manufacturing wafer on which the cured resin film is formed along the line to be divided to obtain a semiconductor chip having at least the bump formation surface and side surface covered with the cured resin film.

Further, after the step (S2) and before the step (S3), after the step (S3) and before the step (S4), or in the step (S4), the following step (S -BG), a method for manufacturing a semiconductor chip.

Process (S-BG): a process of grinding the back surface of the semiconductor chip manufacturing wafer

[8] A semiconductor chip having a cured resin film obtained by curing the curable resin film according to [1] or [2] above on both the bump formation surface and side surface of a semiconductor chip having a bump formation surface with bumps. .

According to the present invention, a curable resin film used to form a cured resin film as a protective film on both the bump formation surface and the side surface of a semiconductor chip having a bump formation surface with bumps and excellent in processing quality after grinding and singling, A composite sheet comprising the curable resin film, a semiconductor chip, and a method for manufacturing the semiconductor chip can be provided.

1 is a schematic sectional view showing the configuration of a composite sheet in one embodiment of the present invention.
2 is a schematic sectional view showing the configuration of a composite sheet in another embodiment of the present invention.
3 is a schematic cross-sectional view showing an example of a wafer for semiconductor chip manufacturing prepared in step (S1).
4 : is a figure which shows the outline of a process (S2).
5 : is a figure which shows the outline of a process (S3).
6 is a diagram showing an outline of the step (S4).
7 is a diagram showing an outline of a step (S-BG).

In this specification, "active ingredient" refers to a component excluding diluent solvents, such as water and an organic solvent, among the components contained in the target composition.

In addition, in this specification, "(meth)acrylic acid" shows both "acrylic acid" and "methacrylic acid", and other similar terms are also the same.

In addition, in this specification, a weight average molecular weight and a number average molecular weight are polystyrene conversion values measured by the gel permeation chromatography (GPC) method.

In addition, in this specification, the lower limit value and upper limit value described step by step with respect to a preferable numerical range (for example, range of content etc.) can be combined independently, respectively. For example, from the description of "preferably 10 to 90, more preferably 30 to 60", "preferably lower limit (10)" and "more preferable upper limit (60)" are combined to "10 to 60" You may.

[Curable Resin Film]

The curable resin film of the present invention is a curable resin film used to form a cured resin film as a protective film on both the bump formation surface and the side surface of a semiconductor chip having a bump formation surface with bumps. The breaking energy at 70°C after curing is 10.0 MJ/m ³ or less.

If the breaking energy at 70 ° C. after curing of the curable resin film exceeds 10.0 MJ / m ³ , in the semiconductor chip manufacturing process, the curable resin film is embedded in a groove portion formed in a wafer for semiconductor chip manufacturing, The cutting debris generated when cutting the cured resin film formed by curing the curable resin film along the line to be divided increases, and the cutting debris tends to remain as a residue in the groove portion. Therefore, when the said residue adheres to the cut surface of the wafer for semiconductor chip manufacture, there exists a possibility that the processing quality of the semiconductor chip obtained may fall. From this point of view, the breaking energy is preferably 9.0 MJ/m ³ or less, more preferably 7.0 MJ/m ³ or less, still more preferably 5.5 MJ/m ³ or less, still more preferably 3.0 MJ/m ³ or less. Moreover, although the lower limit of the said breaking energy is not specifically limited, Preferably it is 0.1 MJ/m ^<3> or more.

The said breaking energy can be adjusted by adjusting any one or both of the kind and quantity of the component contained in the curable resin which forms a curable resin film.

In addition, the said breaking energy can be measured by the method described in the Example.

The curable resin film of the present invention has an elongation at break at 70°C after curing of preferably 85% or less, more preferably 65% or less, even more preferably 45% or less, still more preferably 40% or less. % or less, more preferably 30% or less, still more preferably 20% or less. When the elongation at break is equal to or less than the above value, the cured resin film formed by burying the curable resin film in a groove portion formed in a wafer for semiconductor chip production and curing the curable resin film in the manufacturing process of a semiconductor chip is to be divided into lines When cutting along, deformation due to stretching of the cured resin film due to frictional heat and generation of cutting chips can be suppressed. Therefore, deformation of the cut surface of the wafer for semiconductor chip production and adhesion of cutting scraps to the cut surface are less likely to occur, and a semiconductor chip excellent in processing quality is obtained. Moreover, although the lower limit of the said elongation at break is not specifically limited, 1 % or more may be sufficient and 3 % or more may be sufficient.

The said elongation at break can be adjusted by adjusting any one or both of the kind and quantity of the component contained in the curable resin which forms a curable resin film.

In addition, the said elongation at break can be measured by the method described in the Example.

The product of the elongation at break (T) and the energy at break (E) at 70°C after curing of the curable resin film of the present invention is preferably 1000 or less, more preferably 850 or less, still more preferably 650 or less, , It is even more preferably 450 or less, even more preferably 300 or less, and even more preferably 200 or less. When the product of the elongation at break (T) and the energy at break (E) is equal to or less than the above value, in the manufacturing process of the semiconductor chip, cutting scraps and residues are suppressed, and the processing quality of the obtained semiconductor chip can be improved. Moreover, although the lower limit of the product of the said breaking elongation and breaking energy is not specifically limited, It may be 1 or more.

The curable resin film of the present invention preferably satisfies the following requirement (I) from the viewpoint of forming a protective film having excellent coating properties on both the bump formation surface and the side surface of the semiconductor chip.

<Requirement (I)>

Under conditions of a temperature of 90°C and a frequency of 1 Hz, strain was generated in a test piece of the curable resin film having a diameter of 25 mm and a thickness of 1 mm, the storage modulus of the test piece was measured, and the strain of the test piece was 1%. When the storage elastic modulus of the test piece is Gc1 and the storage elastic modulus of the test piece when the deformation of the test piece is 300% is Gc300, the X value calculated by the following formula (i) is 10 or more and less than 10,000.

X=Gc1/Gc300……(i)

The upper limit of the X value specified in the above requirement (I) is preferably 5,000 or less, more preferably 2,000 or less, still more preferably 1,000 or less, even more preferably, from the viewpoint of forming a protective film with excellent coating properties. is 500 or less, more preferably 300 or less, still more preferably 100 or less, still more preferably 70 or less.

In addition, from the viewpoint of making the embeddability of the wafer for semiconductor chip production better, the lower limit of the X value specified in the above requirement (I) is preferably 20 or more, more preferably 30 or more.

In the curable resin film of the present invention, Gc1 is not particularly limited as long as the X value specified in the above requirement (I) is 10 or more and less than 10,000.

However, from the viewpoint of making it easier to form a protective film with excellent coverage, Gc1 is preferably 1×10 ² to 1×10 ⁶ Pa, more preferably 2×10 ³ to 7×10 ⁵ Pa, More preferably, it is 3×10 ³ to 5×10 ⁵ Pa.

In the curable resin film of the present invention, Gc300 is not particularly limited as long as the X value is 10 or more and less than 10,000.

However, Gc300 is 10 to 15,000 Pa from the viewpoint of improving the embedding property of the curable resin film to the bump base and the embedding property to the groove portion of the semiconductor chip manufacturing wafer after the bump penetrates the curable resin film. It is preferably from 30 to 10,000 Pa, more preferably from 60 to 5,000 Pa.

The curable resin film of the present invention has a crosslinking density of preferably 0.20 to 0.70 mol/ml, more preferably 0.40 to 0.60 mol/ml, and still more preferably, from the viewpoint of processing quality of chips after processing and reduction of residues. It is preferably 0.45 to 0.49 mol/ml.

In addition, the said crosslinking density can be computed by the method described in the Example mentioned later.

The thickness of the curable resin film of the present invention is preferably 30 μm or more, more preferably 40 μm or more, still more preferably 45 μm or more, from the viewpoint of good filling of grooves. In addition, the thickness of the curable resin film is preferably 250 μm or less, more preferably 200 μm or less, still more preferably 150 μm or less, from the viewpoint of suppression of contamination due to exudation during application.

However, the thickness can be appropriately adjusted because the volume of the resin to be filled changes depending on the depth and width of the groove formed in the semiconductor chip manufacturing wafer.

Here, the "thickness of the curable resin film" means the thickness of the entire curable resin film, and for example, the thickness of the curable resin film composed of a plurality of layers means the total thickness of all the layers constituting the curable resin film. do.

The curable resin film of the present invention is a film used to cover the bump formation surface of a wafer for semiconductor chip production and to fill grooves formed in a wafer for semiconductor chip production, by curing by heating or energy ray irradiation. , to form a cured resin film. The curable resin film may be a thermosetting resin film cured by heating or an energy ray curable resin film cured by energy ray irradiation, but from the viewpoint of making it easier to exhibit the effects of the present invention, a thermosetting resin film is preferable. do.

Hereinafter, a thermosetting resin film is demonstrated.

(thermosetting resin film)

The said thermosetting resin film contains a polymer component (A) and a thermosetting component (B). The thermosetting resin film is formed of, for example, a thermosetting resin composition containing a polymer component (A) and a thermosetting component (B).

The polymer component (A) is a component that can be considered to have been formed through a polymerization reaction of a polymerizable compound. In addition, the thermosetting component (B) is a component that can undergo a curing (polymerization) reaction by using heat as a reaction trigger. In addition, a polycondensation reaction is also included in the said hardening (polymerization) reaction.

In addition, in the following description of this specification, "the content of each component in the total amount of the active ingredient of the thermosetting resin composition" has the same meaning as "the content of each component of the thermosetting resin film formed from the thermosetting resin composition". .

[Polymer component (A)]

A thermosetting resin film and a thermosetting resin composition contain a polymer component (A).

The polymer component (A) is a polymer compound for imparting film-formability, flexibility, and the like to the thermosetting resin film. A polymer component (A) may be used individually by 1 type, and may be used in combination of 2 or more type. When using in combination of 2 or more types of polymer components (A), their combination and ratio can be arbitrarily selected.

Examples of the polymer component (A) include acrylic resin (resin having a (meth)acryloyl group), polyarylate resin, polyvinyl acetal, polyester, urethane resin (resin having a urethane bond), and acrylic urethane resin. , silicone-based resin (resin having a siloxane bond), rubber-based resin (resin having a rubber structure), phenoxy resin, and thermosetting polyimide.

Among these, acrylic resins, polyarylate resins, and polyvinyl acetal are preferred, and polyarylate resins are more preferred.

A well-known acrylic polymer is mentioned as an acrylic resin.

The weight average molecular weight (Mw) of the acrylic resin is preferably 10,000 to 2,000,000, more preferably 300,000 to 1,500,000, still more preferably 500,000 to 1,000,000.

When the weight average molecular weight of the acrylic resin is equal to or greater than the above lower limit, the shape stability (temporal stability at the time of storage) of the thermosetting resin film is easily improved. In addition, when the weight average molecular weight of the acrylic resin is equal to or less than the above upper limit, the thermosetting resin film easily follows the uneven surface of the adherend, and suppresses generation of voids or the like between the adherend and the thermosetting resin film, for example. easy to do Accordingly, the coating property of the bump formation surface of the semiconductor wafer is improved, and the embedment property in the groove portion is also easily improved.

The glass transition temperature (Tg) of the acrylic resin is preferably -60 to 70 ° C, more preferably -40 to 50 ° C, and -30 ° C to 30 ° C, from the viewpoint of adhesion and handling of the curable resin film. It is more preferable to be

As acrylic resin, it is polymer of 1 type, or 2 or more types of (meth)acrylic acid ester, for example; and copolymers of two or more monomers selected from (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, and N-methylol acrylamide.

As (meth)acrylic acid ester constituting the acrylic resin, for example, methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n- (meth)acrylate Butyl, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, 2-ethyl (meth)acrylate Hexyl, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, (meth)acrylic acid Dodecyl (lauryl (meth)acrylate), tridecyl (meth)acrylate, tetradecyl (meth)acrylate (myristyl (meth)acrylate), pentadecyl (meth)acrylate, hexadecyl (meth)acrylate ((meth)acrylate) palmityl acrylate), heptadecyl (meth)acrylate, and octadecyl (meth)acrylate (stearyl (meth)acrylate), the alkyl group constituting the alkyl ester has a chain structure of 1 to 18 carbon atoms (meth)acrylate. ) acrylic acid alkyl ester;

(meth)acrylic acid cycloalkyl esters such as isobornyl (meth)acrylate and dicyclopentanyl (meth)acrylate;

(meth)acrylic acid aralkyl esters such as benzyl (meth)acrylate;

(meth)acrylic acid cycloalkenyl esters such as (meth)acrylic acid dicyclopentenyl ester;

(meth)acrylic acid cycloalkenyloxyalkyl esters such as dicyclopentenyloxyethyl (meth)acrylate;

(meth)acrylic acid imide;

glycidyl group-containing (meth)acrylic acid esters such as glycidyl (meth)acrylate;

Hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, (meth)acrylate ) Hydroxyl group-containing (meth)acrylic acid esters such as 3-hydroxybutyl acrylate and 4-hydroxybutyl (meth)acrylate;

and substituted amino group-containing (meth)acrylic acid esters such as N-methylaminoethyl (meth)acrylic acid.

In this specification, "substituted amino group" means the group formed by replacing one or two hydrogen atoms of an amino group with groups other than a hydrogen atom.

Among these, from the viewpoint of the film formability of the curable resin film and the adhesion of the curable resin film to the protective film forming surface of a semiconductor chip, the alkyl group constituting the alkyl ester is a chain structure of 1 to 18 carbon atoms (meth). It is preferable that it is a copolymer combining an acrylic acid alkyl ester, a glycidyl group-containing (meth)acrylic acid ester, and a hydroxyl group-containing (meth)acrylic acid ester, and the alkyl group constituting the alkyl ester has a chain structure of 1 to 4 carbon atoms ( It is more preferably a copolymer obtained by combining an alkyl meth)acrylate, a (meth)acrylic acid ester containing a glycidyl group, and a (meth)acrylic acid ester containing a hydroxyl group, and butyl acrylate, methyl acrylate, glycidyl acrylate, and 2-hydride acrylic acid It is more preferable that it is a copolymer in which oxyethyl was combined.

The acrylic resin is obtained by copolymerizing, for example, (meth)acrylic acid ester with at least one monomer selected from (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, and styrene and N-methylolacrylamide. It could be anything.

The monomer constituting the acrylic resin may be used singly or in combination of two or more. When there are two or more types of monomers constituting the acrylic resin, their combination and ratio can be arbitrarily selected.

Examples of the above-mentioned polyarylate resin in the polymerizable component (A) include known ones, and examples thereof include resins whose basic configuration is polycondensation of dihydric phenol with dibasic acids such as phthalic acid and carboxylic acid. can be heard Among them, polycondensates of bisphenol A and phthalic acid, poly4,4'-isopropylidenediphenylene terephthalate/isophthalate copolymers, derivatives thereof, and the like are preferable.

A well-known thing is mentioned as said polyvinyl acetal in a polymer component (A).

Especially, as a preferable polyvinyl acetal, polyvinyl formal, polyvinyl butyral, etc. are mentioned, for example, and polyvinyl butyral is more preferable.

Examples of polyvinyl butyral include those having structural units represented by the following formulas (i)-1, (i)-2 and (i)-3.

[Formula 1]

(In the formula, l, m, and n are each independently an integer of 1 or more.)

It is preferable that it is 5,000-200,000, and, as for the weight average molecular weight (Mw) of polyvinyl acetal, it is more preferable that it is 8,000-100,000. When the weight average molecular weight of the polyvinyl acetal is equal to or greater than the lower limit, the shape stability (stability over time during storage) of the thermosetting resin film is easily improved. In addition, when the weight average molecular weight of polyvinyl acetal is equal to or less than the above upper limit, it becomes easier for the thermosetting resin film to follow the uneven surface of the adherend, and for example, generation of voids or the like between the adherend and the thermosetting resin film is prevented. easy to suppress Accordingly, the coating property of the bump formation surface of the semiconductor wafer is improved, and the embedment property in the groove portion is also easily improved.

The glass transition temperature (Tg) of polyvinyl acetal is preferably 40 to 80°C, and preferably 50 to 70, from the viewpoint of the film-formability of the curable resin film and the prominence of the bump head. It is more preferable that it is °C.

Here, in the present specification, "protrusion of the bump head" refers to the performance of the bump penetrating the thermosetting resin film when attaching the thermosetting resin film for forming a protective film to the wafer on which the bump is formed, Also called penetrability.

The ratio of three or more types of monomers constituting polyvinyl acetal can be arbitrarily selected.

The content of the polymer component (A) is preferably from 2 to 30% by mass, more preferably from 3 to 25% by mass, and still more preferably from 3 to 15% by mass, based on the total amount of the active ingredients of the thermosetting resin composition. desirable.

The polymer component (A) may also correspond to the thermosetting component (B). In the present invention, when the thermosetting resin composition contains components corresponding to both the polymer component (A) and the thermosetting component (B), the thermosetting resin composition is composed of the polymer component (A) and the thermosetting component (B). It is considered to contain both.

[Thermosetting component (B)]

A thermosetting resin film and a thermosetting resin composition contain a thermosetting component (B).

The thermosetting component (B) is a component for curing the thermosetting resin film to form a hard cured resin film.

A thermosetting component (B) may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more types of thermosetting components (B), their combinations and ratios can be arbitrarily selected.

Examples of the thermosetting component (B) include epoxy thermosetting resins, thermosetting polyimides, polyurethanes, unsaturated polyesters, and silicone resins. Among these, an epoxy-based thermosetting resin is preferable. When the thermosetting component (B) is an epoxy-based thermosetting resin, the protective properties of the cured resin film and the prominence of the top of the bump can be improved, and warping of the cured resin film can be suppressed.

An epoxy-type thermosetting resin consists of an epoxy resin (B1) and a thermosetting agent (B2).

An epoxy-type thermosetting resin may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more epoxy-based thermosetting resins, their combinations and ratios can be arbitrarily selected.

<Epoxy Resin (B1)>

The epoxy resin (B1) is not particularly limited, but from the viewpoint of making it easier to exhibit the effects of the present invention, a solid epoxy resin at normal temperature (hereinafter also referred to as a solid epoxy resin) and a liquid epoxy resin at normal temperature (hereinafter referred to as a solid epoxy resin) , also referred to as a liquid epoxy resin) is preferably used in combination.

In addition, in this specification, "normal temperature" points out 5-35 degreeC, Preferably it is 15-25 degreeC.

The liquid epoxy resin is not particularly limited as long as it is liquid at room temperature, and examples thereof include bisphenol A type epoxy resin, bisphenol F type epoxy resin, novolac type epoxy resin, glycidyl ester type epoxy resin, and biphenyl type epoxy resin. Resin, phenylene skeleton type epoxy resin, etc. are mentioned. Among these, bisphenol A type epoxy resin is preferable.

A liquid epoxy resin may be used individually by 1 type, and may be used in combination of 2 or more type. When two or more types of liquid epoxy resins are used, their combinations and ratios can be arbitrarily selected.

The epoxy equivalent of the liquid epoxy resin is preferably 200 to 600 g/eq, more preferably 250 to 550 g/eq, still more preferably 300 to 500 g/eq.

The solid epoxy resin is not particularly limited as long as it is solid at room temperature, and examples thereof include biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, orthocresol novolac epoxy resin, and dicyclopentadiene. type epoxy resins, naphthalene type epoxy resins, anthracene type epoxy resins, fluorene skeleton type epoxy resins, and the like. Among these, a naphthalene type epoxy resin and a fluorene skeleton type epoxy resin are preferable, and a fluorene skeleton type epoxy resin is more preferable.

A solid epoxy resin may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more types of solid epoxy resins, their combinations and ratios can be arbitrarily selected.

The epoxy equivalent of the solid epoxy resin is preferably from 150 to 450 g/eq, more preferably from 150 to 400 g/eq.

The ratio [(x)/(y)] of the content of the liquid epoxy resin (x) and the content of the solid epoxy resin (y) is preferably from 0.2 to 10.0, more preferably from 0.3 to 8.0 in terms of mass ratio. , More preferably, they are 0.4 to 6.0, and even more preferably, they are 0.5 to 5.0. When the ratio [(x)/(y)] is within the above range, it is easy to adjust the breaking energy of the curable resin film at 70°C after curing to the above-mentioned value or less.

The number average molecular weight of the epoxy resin (B1) is not particularly limited, but is preferably 300 to 30,000, and more preferably 400 to 10,000 from the viewpoints of the curability of the thermosetting resin film and the strength and heat resistance of the cured resin film after curing. and more preferably 500 to 3,000.

<Heat curing agent (B2)>

The heat curing agent (B2) functions as a curing agent for the epoxy resin (B1).

Examples of the heat curing agent (B2) include compounds having two or more functional groups capable of reacting with epoxy groups in one molecule. Examples of the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxy group, and a group in which an acid group is anhydride, and a phenolic hydroxyl group, an amino group, or a group in which an acid group is anhydride is preferable, and phenol It is more preferable that it is a sexual hydroxyl group or an amino group.

Among the thermosetting agents (B2), examples of the phenolic curing agent having a phenolic hydroxyl group include polyfunctional phenolic resins, biphenols, novolak-type phenolic resins, dicyclopentadiene-based phenolic resins, and aralkylphenolic resins. can be heard

Among the thermosetting agents (B2), examples of the amine-based curing agent having an amino group include dicyandiamide (hereinafter sometimes abbreviated as "DICY") and the like.

Among these, from the viewpoint of making it easier to exhibit the effect of the present invention, a phenolic curing agent having a phenolic hydroxyl group is preferable, and a novolak type phenolic resin is more preferable.

Among the thermosetting agents (B2), for example, the number average molecular weight of resin components such as polyfunctional phenol resins, novolak-type phenol resins, dicyclopentadiene-based phenol resins, and aralkyl phenol resins is 300 to 30,000. It is preferably from 400 to 10,000, more preferably from 500 to 3,000.

Among the thermosetting agents (B2), for example, the molecular weight of non-resin components such as biphenol and dicyandiamide is not particularly limited, but is preferably, for example, 60 to 500.

A heat curing agent (B2) may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more types of heat curing agents (B2), their combinations and ratios can be arbitrarily selected.

In the thermosetting resin composition, the content of the thermosetting agent (B2) is preferably 1 to 200 parts by mass, more preferably 5 to 150 parts by mass, and 10 to 100 parts by mass, based on 100 parts by mass of the epoxy resin (B1). It is more preferable that it is a mass part, and it is still more preferable that it is 15-77 mass parts. Curing of a thermosetting resin film advances more easily because content of a thermosetting agent (B2) is more than the said lower limit. Moreover, when content of a thermosetting agent (B2) is below the said upper limit, the moisture absorptivity of a thermosetting resin film reduces and the reliability of the package obtained using a thermosetting resin film improves more.

In the thermosetting resin composition, the content of the thermosetting component (B) (total content of the epoxy resin (B1) and the thermosetting agent (B2)) is 100 mass of the content of the polymer component (A) from the viewpoint of enhancing the protective property of the cured resin film With respect to parts, it is preferably 200 to 3000 parts by mass, more preferably 300 to 2000 parts by mass, still more preferably 400 to 1000 parts by mass, and still more preferably 500 to 800 parts by mass.

[Curing accelerator (C)]

The thermosetting resin film and the thermosetting resin composition may contain a curing accelerator (C).

The curing accelerator (C) is a component for adjusting the curing rate of the thermosetting resin composition.

Examples of the preferable curing accelerator (C) include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5 -Imidazoles such as hydroxymethylimidazole (imidazoles in which one or more hydrogen atoms are substituted with groups other than hydrogen atoms); organic phosphines (phosphine in which one or more hydrogen atoms are substituted with organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; tetraphenyl boron salts such as tetraphenylphosphonium tetraphenyl borate and triphenylphosphine tetraphenyl borate; and the like.

Among these, imidazoles are preferred, and 2-phenyl-4,5-dihydroxymethylimidazole is more preferred, from the viewpoint of making it easier to exhibit the effects of the present invention.

A hardening accelerator (C) may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more types of hardening accelerators (C), their combinations and ratios can be arbitrarily selected.

In the thermosetting resin composition, the content of the curing accelerator (C) in the case of using the curing accelerator (C) is preferably 0.01 to 10 parts by mass, and preferably 0.1 to 10 parts by mass with respect to 100 parts by mass of the content of the thermosetting component (B). It is more preferable that it is 5 mass parts. When content of a hardening accelerator (C) is more than the said lower limit, the effect by using a hardening accelerator (C) is more remarkably easy to be obtained. In addition, when the content of the curing accelerator (C) is equal to or less than the above upper limit, the highly polar curing accelerator (C) moves to the bonding interface side with the adherend in the thermosetting resin film under high temperature and high humidity conditions, for example. The effect of suppressing segregation is enhanced, and the reliability of the package obtained by using the thermosetting resin film is further improved.

[Filling material (D)]

The thermosetting resin film and the thermosetting resin composition may contain a filler (D).

By containing the filler (D), it becomes easy to adjust the thermal expansion coefficient of the cured resin film obtained by curing the thermosetting resin film to an appropriate range, and the reliability of the package obtained using the thermosetting resin film is further improved. In addition, when the thermosetting resin film contains the filler (D), the moisture absorptivity of the cured resin film can be reduced or the heat dissipation property can be improved.

The filler (D) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler. Preferred inorganic fillers include, for example, powders such as silica, alumina, talc, calcium carbonate, titanium white, bengala, silicon carbide, and boron nitride; Beads which spheroidized these inorganic fillers; surface-modified products of these inorganic fillers; single crystal fibers of these inorganic fillers; Glass fiber etc. are mentioned. Among these, from the viewpoint of making it easier to exhibit the effects of the present invention more, the inorganic filler is preferably silica or alumina.

A filler (D) may be used individually by 1 type, and may be used in combination of 2 or more type.

When there are two or more types of fillers (D), their combinations and ratios can be arbitrarily selected.

In the case of using the filler (D), the content of the filler (D) is 5 to 50 based on the total amount of the active ingredients of the thermosetting resin composition from the viewpoint of suppressing peeling of the cured resin film from the chip due to thermal expansion and thermal contraction. It is preferable that it is mass %, it is more preferable that it is 7-40 mass %, and it is still more preferable that it is 10-30 mass %.

The average particle diameter of the filler (D) is preferably from 5 nm to 1000 nm, more preferably from 5 nm to 500 nm, still more preferably from 10 nm to 300 nm. The average particle diameter is obtained by measuring the outer diameter of one particle at several locations and obtaining an average value.

[Energy ray curable resin (E)]

The thermosetting resin film and the thermosetting resin composition may contain an energy ray curable resin (E).

Since the thermosetting resin film contains the energy ray-curable resin (E), the properties can be changed by irradiation with energy rays.

The energy ray-curable resin (E) is obtained by polymerizing (curing) an energy ray-curable compound. Examples of the energy ray-curable compound include a compound having at least one polymerizable double bond in the molecule, and an acrylate-based compound having a (meth)acryloyl group is preferable.

Examples of the acrylate-based compound include trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, and pentaerythritol tetra(meth)acrylate. Rate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butylene glycoldi(meth)acrylate, 1,6-hexanedioldi(meth)acrylate ) Chain-like aliphatic skeleton-containing (meth)acrylates such as acrylates; Cyclic aliphatic skeleton-containing (meth)acrylates such as dicyclopentanyl di(meth)acrylate; polyalkylene glycol (meth)acrylates such as polyethylene glycol di(meth)acrylate; Oligoester (meth)acrylate; Urethane (meth)acrylate oligomer; Epoxy modified (meth)acrylate; Polyether (meth)acrylates other than the said polyalkylene glycol (meth)acrylate; Itaconic acid oligomer etc. are mentioned.

It is preferable that it is 100-30,000, and, as for the weight average molecular weight of an energy ray-curable compound, it is more preferable that it is 300-10,000.

The energy ray-curable compounds used for polymerization may be used singly or in combination of two or more. When two or more types of energy ray-curable compounds are used for polymerization, their combinations and ratios can be arbitrarily selected.

In the case of using the energy ray-curable resin (E), the content of the energy ray-curable resin (E) is preferably 1 to 95% by mass, and 5 to 90% by mass, based on the total amount of active ingredients of the thermosetting resin composition. It is more preferable that it is %, and it is more preferable that it is 10-85 mass %.

[Photoinitiator (F)]

When the thermosetting resin film and the thermosetting resin composition contain the energy ray curable resin (E), in order to efficiently proceed the polymerization reaction of the energy ray curable resin (E), the photopolymerization initiator (F ) may be contained.

Examples of the photopolymerization initiator (F) include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, and benzoin methyl benzoate. , benzoindimethylketal, 2,4-diethylthioxanthone, 1-hydroxycyclohexylphenylketone, benzyldiphenylsulfide, tetramethylthiurammonosulfide, azobisisobutyronitrile, benzyl, dibenzyl , diacetyl, 1,2-diphenylmethane, 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide , and 2-chloroanthraquinone.

A photoinitiator (F) may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more types of photopolymerization initiators (F), their combinations and ratios can be arbitrarily selected.

In the thermosetting resin composition, the content of the photopolymerization initiator (F) is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, based on 100 parts by mass of the energy ray curable resin (E). It is more preferably about 5 parts by mass.

[Additive (G)]

The thermosetting resin film and the thermosetting resin composition may contain an additive (G) within a range not impairing the effect of the present invention. The additive (G) may be a known one, may be arbitrarily selected according to the purpose, and is not particularly limited.

As a preferable additive (G), a coupling agent, a crosslinking agent, surfactant, a plasticizer, an antistatic agent, antioxidant, and a gettering agent etc. are mentioned, for example.

An additive (G) may be used individually by 1 type, and may be used in combination of 2 or more type. When there are 2 or more types of general-purpose additives (G), their combinations and ratios can be arbitrarily selected.

Content of an additive (G) is not specifically limited, What is necessary is just to select suitably according to the objective.

〔menstruum〕

It is preferable that the thermosetting resin composition further contains a solvent.

A thermosetting resin composition containing a solvent has good handleability.

The solvent is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol), and 1-butanol; esters such as ethyl acetate; Ketones, such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone; and the like.

A solvent may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more solvents, their combinations and ratios can be arbitrarily selected.

The solvent is preferably methyl ethyl ketone or the like from the viewpoint of being able to more uniformly mix the components contained in the thermosetting resin composition.

(Preparation method of thermosetting resin composition)

The thermosetting resin composition is prepared by blending each component for constituting it.

The order of adding each component at the time of blending is not particularly limited, and two or more components may be added simultaneously. In the case of using a solvent, the solvent may be used by mixing the solvent with any compounding component other than the solvent and diluting the compounding component in advance. You may use by mixing with a component.

The method of mixing each component at the time of compounding is not specifically limited, The method of mixing by rotating a stirrer or a stirring blade etc.; How to mix using a mixer; What is necessary is just to select suitably from well-known methods, such as the method of mixing by applying ultrasonic waves.

The temperature and time at the time of addition and mixing of each component are not particularly limited as long as each compounding component does not deteriorate, and may be appropriately adjusted, but the temperature is preferably 15 to 30°C.

[Composite Sheet]

The curable resin film of one aspect of the present invention may be a composite sheet having a laminated structure in which the curable resin film and a release sheet are laminated. By using the composite sheet, the curable resin film is stably supported and protected when the curable resin film is transported as a product package or the curable resin film is transported within the manufacturing process of a semiconductor chip.

1 is a schematic cross-sectional view showing the configuration of a composite sheet in one embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view showing the configuration of a composite sheet in another embodiment of the present invention.

The composite sheet 10 of FIG. 1 has a release sheet 1 and a curable resin film 2 formed on the release sheet 1 . The release sheet 1 has a substrate 3 and a release layer 4, and the release layer 4 is formed so as to face the curable resin film 2.

The composite sheet 20 in FIG. 2 has a release sheet 11 and a curable resin film 12 formed on the release sheet 11 . In the release sheet 11, an intermediate layer 15 may be formed between the substrate 13 and the release layer 14.

Further, a laminate in which the substrate 13, the intermediate layer 15, and the release layer 14 are laminated in this order is suitable for use as a back grind sheet.

Hereinafter, each layer constituting the release sheet used in the composite sheet of the present invention will be described.

(write)

The base material is a sheet-like or film-like thing, and examples of its constituent materials include the following various resins.

Examples of the resin constituting the substrate include polyethylene such as low density polyethylene (LDPE), linear low density polyethylene (LLDPE), and high density polyethylene (HDPE); polyolefins other than polyethylene, such as polypropylene, polybutene, polybutadiene, polymethylpentene, and norbornene resin; Ethylene-based copolymers such as ethylene-vinyl acetate copolymers, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylic acid ester copolymers, and ethylene-norbornene copolymers (copolymers obtained by using ethylene as a monomer) ; vinyl chloride-based resins such as polyvinyl chloride and vinyl chloride copolymers (resin obtained by using vinyl chloride as a monomer); polystyrene; polycycloolefin; polyesters such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate, polyethylene-2,6-naphthalenedicarboxylate, and fully aromatic polyesters in which all constituent units have aromatic cyclic groups; copolymers of two or more of the above polyesters; Poly(meth)acrylic acid ester; Polyurethane ; Polyurethane acrylate; polyimide; polyamide; polycarbonate; fluorine resin; polyacetal; modified polyphenylene oxide; polyphenylene sulfide; polysulfone; Polyether ketone etc. are mentioned.

Moreover, as resin which comprises a base material, polymer alloys, such as the mixture of the said polyester and other resins, are also mentioned, for example. In the polymer alloy of the polyester and other resins, it is preferable that the amount of the resin other than polyester is relatively small.

Moreover, as resin which comprises a base material, it is crosslinked resin by which 1 type(s) or 2 or more types were crosslinked among the said resins illustrated so far, for example; Modified resins, such as ionomers, using one or two or more of the resins exemplified so far are also included.

The resin constituting the substrate may be used singly or in combination of two or more. When two or more types of resins constitute the base material, their combinations and ratios can be arbitrarily selected.

The base material may be of only one layer (single layer) or a plurality of layers of two or more layers. When the base material is a plurality of layers, these plurality of layers may be the same as or different from each other, and the combination of these plurality of layers is not particularly limited.

The thickness of the substrate is preferably 5 μm to 1,000 μm, more preferably 10 μm to 500 μm, still more preferably 15 μm to 300 μm, and still more preferably 20 μm to 150 μm.

Here, "thickness of base material" means the thickness of the whole base material, and, for example, the thickness of a base material consisting of a plurality of layers means the total thickness of all the layers constituting the base material.

It is preferable that the base material has high accuracy in thickness, that is, one in which variation in thickness is suppressed regardless of the site. Among the constituent materials described above, examples of materials with high precision in thickness that can be used to construct the substrate include polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, polybutylene terephthalate, and ethylene-vinyl acetate. A copolymer etc. are mentioned.

The base material may contain various known additives such as a filler, a colorant, an antistatic agent, an antioxidant, an organic lubricant, a catalyst, and a softener (plasticizer) in addition to the main constituent materials such as the above resin.

The substrate may be transparent or opaque, and may be colored depending on the purpose, or another layer may be deposited thereon.

The base material can be manufactured by a known method. For example, a base material containing resin can be manufactured by molding a resin composition containing the resin.

(exfoliation layer)

The release layer has a function of imparting release properties to the release sheet. The release layer is formed of, for example, a cured product of a composition for forming a release layer containing a release agent.

It does not specifically limit as a release agent, For example, a silicone resin, an alkyd resin, an acrylic resin, an ethylene-vinyl acetate copolymer, etc. are mentioned. Among these, an ethylene-vinyl acetate copolymer is preferable from the viewpoint of improving the prominence of the top of the bump and of releasability from the cured resin film.

The peeling layer may consist of only one layer (single layer) or a plurality of layers of two or more layers. When the peeling layer is a plurality of layers, these plurality of layers may be the same as or different from each other, and the combination of these plurality of layers is not particularly limited.

The thickness of the peeling layer is preferably 3 to 50 µm, more preferably 5 to 30 µm, from the viewpoint of peelability and handling properties. Here, the "thickness of the peeling layer" means the thickness of the entire peeling layer, and the thickness of a peeling layer composed of a plurality of layers, for example, means the total thickness of all the layers constituting the peeling layer.

(middle layer)

The intermediate layer may be in the form of a sheet or film, and its constituent material may be appropriately selected according to the purpose, and is not particularly limited. For example, when the purpose is to suppress the cured resin film from being deformed by reflecting the shape of the bumps present on the semiconductor surface in the protective film covering the semiconductor surface, a preferable constituent material for the intermediate layer is high in concavo-convex followability , Urethane (meth)acrylate etc. are mentioned at the point which the adhesiveness of an intermediate|middle layer improves more.

The intermediate layer may be one layer (single layer) or may be a plurality of layers of two or more layers. When the intermediate layer is a plurality of layers, these plurality of layers may be the same as or different from each other, and the combination of these plurality of layers is not particularly limited.

The thickness of the intermediate layer can be appropriately adjusted according to the height of the bumps on the surface of the semiconductor to be protected, but it is preferably 50 μm to 600 μm in that it can easily absorb the influence of relatively high bumps. It is more preferably from ㎛ to 500 ㎛, and more preferably from 80 ㎛ to 400 ㎛. Here, the "thickness of the intermediate layer" means the thickness of the entire intermediate layer, and for example, the thickness of an intermediate layer composed of a plurality of layers means the total thickness of all layers constituting the intermediate layer.

(Method of manufacturing composite sheet)

A composite sheet can be manufactured by sequentially laminating each of the above layers so as to have a corresponding positional relationship.

For example, in the case of laminating a release layer or an intermediate layer on a substrate when manufacturing a composite sheet, a composition for forming a release layer or an intermediate layer is coated on the substrate and dried as necessary, or energy By irradiating a line, a release layer or an intermediate layer can be laminated.

Examples of the coating method include spin coating method, spray coating method, bar coating method, knife coating method, roll coating method, roll knife coating method, blade coating method, die coating method, gravure coating method and the like. .

On the other hand, for example, when a curable resin film is further laminated on a release layer laminated on a base material, it is possible to directly form the curable resin by coating a thermosetting resin composition on the release layer.

Similarly, when a release layer is further laminated on the intermediate layer laminated on the base material, it is possible to directly form the release layer by coating the composition for forming a release layer on the intermediate layer.

In this way, when a continuous two-layer laminated structure is formed using a certain composition, it is possible to newly form a layer by further coating the composition on the layer formed of the composition. However, the layer to be laminated later among these two layers is formed in advance using the above composition on another release film, and the exposed surface on the opposite side to the side in contact with the release film of the formed layer has already been formed. It is preferable to form a continuous two-layer laminated structure by bonding together with the exposed surface of the completed remaining layer. At this time, it is preferable to apply the said composition to the peeling treatment surface of a peeling film. What is necessary is just to remove a peeling film after formation of a laminated structure as needed.

[Method of manufacturing semiconductor chips]

The semiconductor chip manufacturing method of the present invention, roughly, includes a step of preparing a semiconductor chip manufacturing wafer (S1), a step of attaching a curable resin film (S2), a step of curing the curable resin film (S3), and singulation. and a step (S4) of grinding the back surface of the semiconductor chip manufacturing wafer (S-BG).

In detail, the manufacturing method of the semiconductor chip of this invention includes the following steps (S1) - (S4) in this order.

Step (S1): Step of preparing a wafer for semiconductor chip manufacturing in which grooves as division lines are formed on the bump formation surface of a semiconductor wafer having a bump formation surface with bumps without reaching the back surface

Step (S2): pressurizing and attaching the curable resin film described above to the bump formation surface of the wafer for semiconductor chip production, the bump formation surface of the wafer for semiconductor chip production, the bump formation surface to the curable resin film A process of burying the curable resin film in the groove portion formed in the wafer for semiconductor chip manufacturing while coating with

Step (S3): A step of curing the curable resin film to obtain a semiconductor chip manufacturing wafer having a cured resin film formed thereon

Step (S4): A step of singling the semiconductor chip manufacturing wafer on which the cured resin film is formed along the line to be divided to obtain a semiconductor chip having at least the bump formation surface and side surface covered with the cured resin film.

Then, after the step (S2) and before the step (S3), after the step (S3) and before the step (S4), or in the step (S4), the following step (S- BG).

Process (S-BG): a process of grinding the back surface of the semiconductor chip manufacturing wafer

In the semiconductor chip manufacturing method of the present invention, the curable resin film is embedded in a groove portion formed in a wafer for semiconductor chip production, and the cured resin film formed by curing the curable resin film is cut along the line to be divided. The cutting waste becomes small, and the cutting waste can be made difficult to remain as a residue. Therefore, it is difficult for the residue to adhere to the cut surface of the wafer, and a semiconductor chip with excellent processing quality can be obtained.

As in the semiconductor chip manufacturing method of the present invention, the curable resin film is embedded in the groove portion formed in the wafer for semiconductor chip production, and the cured resin film formed by curing the curable resin film is cut along the line to be divided, When cutting with the dicing blade, only the cured resin film is cut without cutting the wafer for semiconductor chip manufacturing. Therefore, as in the case of cutting the wafer for semiconductor chip production together with the cured resin film, the effect of removing the cutting debris of the cured resin film along with the cutting debris of the wafer for semiconductor chip production, and the wafer for semiconductor chip production by the dicing blade The dressing effect of the abrasive grains at the time of cutting does not occur, and the processing quality of the cut surface of the cured resin film by the dicing blade tends to deteriorate. However, in the present invention, since the breaking energy at 70°C after curing of the curable resin film is adjusted to 10.0 MJ/m ³ or less, the processing quality of the cut surface of the cured resin film by the dicing blade is not reduced, and processing is performed. A semiconductor chip of excellent quality can be obtained.

In addition, by the manufacturing method including the above steps, a semiconductor chip coated with a cured resin film not only on the bump formation surface but also on the side surface, and having excellent strength and hardly peeling of the cured resin film as a protective film can be obtained.

In addition, "covered" as used herein means that a cured resin film is formed along the shape of the semiconductor chip on at least the bump formation surface and side surface of one semiconductor chip.

Hereinafter, the manufacturing method of the semiconductor chip of the present invention will be described in detail for each step.

In the following description, "semiconductor chip" is also simply referred to as "chip", and "semiconductor wafer" is also simply referred to as "wafer".

In addition, a curable resin film (curable resin film of the present invention) for forming a cured resin film as a protective film on both the bump formation surface and side surface of the semiconductor chip is also referred to as “first curable resin film (X1)”. A cured resin film formed by curing the "first curable resin film (X1)" is also referred to as "first cured resin film (r1)". In addition, a curable resin film for forming a cured resin film as a protective film on the surface (rear surface) opposite to the bump formation surface of the semiconductor chip is also referred to as "second curable resin film (X2)". A cured resin film formed by curing the "second curable resin film (X2)" is also referred to as a "second cured resin film (r2)".

In addition, a composite sheet for forming the first cured resin film r1 as a protective film on both the bump formation surface and side surface of the semiconductor chip is also referred to as "first composite sheet α1". The "first composite sheet (α1)" has a laminated structure in which a "first release sheet (Y1)" and a "first curable resin film (X1)" are laminated.

Moreover, the composite sheet for forming the 2nd cured resin film (r2) as a protective film on the back surface of a semiconductor chip is also called "2nd composite sheet (alpha)2." The "second composite sheet (α2)" has a laminated structure in which a "second peeling sheet (Y2)" and a "second curable resin film (X2)" are laminated.

[Step (S1)]

A schematic cross-sectional view of an example of the semiconductor wafer prepared in step (S1) is shown in FIG. 3 .

In the step (S1), the bump formation surface 21a of the semiconductor wafer 21 having the bump formation surface 21a provided with the bumps 22, the groove portion 23 as the line to be divided reaches the back surface 21b. The wafer 30 for semiconductor chip manufacture which is formed without doing it is prepared.

The shape of the bump 22 is not particularly limited, and may be any shape as long as it can be brought into contact with and fixed to an electrode or the like on a chip mounting substrate. For example, in FIG. 3 , the bump 22 is spherical, but the bump 22 may be a spheroid. The spheroid may be, for example, a spheroid stretched in a vertical direction with respect to the bump formation surface 21a of the wafer 21, or a spheroid stretched in a horizontal direction with respect to the bump formation surface 21a of the wafer 21. It may be an elongated spheroid. Moreover, the bump 22 may be a pillar (pillar) shape.

The height of the bump 22 is not particularly limited, and is appropriately changed according to design requirements.

For example, it is 30 μm to 300 μm, preferably 60 μm to 250 μm, and more preferably 80 μm to 200 μm.

In addition, "the height of the bump 22" means the height at the part which exists in the highest position from the bump formation surface 21a, when focusing on one bump.

The number of bumps 22 is not particularly limited, and is appropriately changed according to design requirements.

The wafer 21 is, for example, a semiconductor wafer on which circuits such as wirings, capacitors, diodes, and transistors are formed. The material of the wafer is not particularly limited, and examples thereof include silicon wafers, silicon carbide wafers, compound semiconductor wafers, glass wafers, and sapphire wafers.

The size of the wafer 21 is not particularly limited, but is usually 8 inches (200 mm in diameter) or larger, and preferably 12 inches (300 mm in diameter) or larger, from the viewpoint of increasing batch processing efficiency. Further, the shape of the wafer 21 is not limited to a circular shape, and may be, for example, a square shape or a rectangular shape. In the case of a prismatic wafer, the size of the wafer 21 is preferably greater than or equal to the size (diameter) of the longest side from the viewpoint of increasing batch processing efficiency.

The thickness of the wafer 21 is not particularly limited, but from the viewpoint of facilitating suppression of warpage accompanying shrinkage during curing of the curable resin film, the amount of grinding of the back surface 21b of the wafer 21 is suppressed in the subsequent step, From the viewpoint of shortening the time required for backside grinding, it is preferably 100 μm to 1,000 μm, more preferably 200 μm to 900 μm, still more preferably 300 μm to 800 μm.

On the bump formation surface 21a of the wafer 30 for semiconductor chip manufacture prepared in step (S1), a plurality of grooves 23 are arranged in a lattice form as division scheduled lines when the wafer 30 for semiconductor chip manufacture is separated into pieces. is formed The plurality of grooves 23 are cut grooves formed when a blade pre-dicing method (Dicing Before Grinding) is applied, and are formed at a depth shallower than the thickness of the wafer 21, so that the deepest portion of the grooves 23 It is prevented from reaching the back surface 21b of the wafer 21 . The plurality of grooves 23 can be formed by dicing using a conventionally known wafer dicing apparatus equipped with a dicing blade or the like.

Further, the plurality of grooves 23 may be formed so that the semiconductor chip to be manufactured has a desired size and shape. In addition, the size of the semiconductor chip is usually about 0.5 mm x 0.5 mm to 1.0 mm x 1.0 mm, but is not limited to this size.

The width of the groove portion 23 is preferably 10 μm to 2,000 μm, more preferably 30 μm to 1,000 μm, still more preferably 40 μm to 500 μm, from the viewpoint of improving the embedding property of the curable resin film. , more preferably 50 μm to 300 μm.

The depth of the groove 23 is adjusted according to the thickness of the wafer used and the required chip thickness, and is preferably 30 μm to 700 μm, more preferably 60 μm to 600 μm, still more preferably 100 μm to 500 μm. μm.

The wafer 30 for semiconductor chip manufacture prepared in step (S1) is provided in step (S2).

[Step (S2)]

The outline of step (S2) is shown in FIG.

In step (S2), the first curable resin film (X1) is pressed and attached to the bump formation surface 21a of the wafer 30 for semiconductor chip manufacture.

Here, from the viewpoint of handleability, the first curable resin film (X1) is used as a first composite sheet (α1) having a laminated structure in which the first release sheet (Y1) and the first curable resin film (X1) are laminated. can also When using the said 1st composite sheet (alpha) 1, the 1st curable resin film (X1) of the 1st composite sheet (alpha) 1 is pressed to the bump formation surface 21a of the wafer 30 for semiconductor chip manufacture as a sticking surface and attach it

As shown in FIG. 4, by process (S2), while covering bump formation surface 21a of the wafer 30 for semiconductor chip manufacture with the 1st curable resin film X1, the wafer 30 for semiconductor chip manufacture The first curable resin film X1 is embedded in the groove portion 23 formed therein.

The pressing force at the time of attaching the first curable resin film (X1) to the wafer 30 for semiconductor chip production is preferably from the viewpoint of making the embedding of the first curable resin film (X1) in the groove portion 23 good. is 1 kPa to 200 kPa, more preferably 5 kPa to 150 kPa, still more preferably 10 kPa to 100 kPa.

In addition, the pressing force at the time of sticking the 1st curable resin film (X1) to the wafer 30 for semiconductor chip manufacture may be varied suitably from the initial stage of sticking to the final stage. For example, from the viewpoint of making the embedding property of the first curable resin film X1 in the groove portion 23 more favorable, it is preferable to lower the pressing force at the initial stage of sticking and gradually increase the pressing force.

In addition, when attaching the 1st curable resin film (X1) to the wafer 30 for semiconductor chip manufacture, when the 1st curable resin film (X1) is a thermosetting resin film, the groove part of the 1st curable resin film (X1) ( 23) It is preferable to heat from the viewpoint of improving the embedding properties.

The specific heating temperature (sticking temperature) is preferably 50°C to 150°C, more preferably 60°C to 130°C, still more preferably 70°C to 110°C.

In addition, the heat treatment performed on the first curable resin film (X1) is not included in the curing treatment of the first curable resin film (X1).

And when affixing 1st curable resin film (X1) to the wafer 30 for semiconductor chip manufacture, it is preferable to carry out in a reduced pressure environment. Thereby, the groove part 23 becomes negative pressure, and the 1st curable resin film X1 spreads easily over the whole groove part 23 easily. As a result, the embeddability of the first curable resin film (X1) in the groove portion 23 becomes better. The specific pressure in the reduced pressure environment is preferably 0.001 kPa to 50 kPa, more preferably 0.01 kPa to 5 kPa, still more preferably 0.05 kPa to 1 kPa.

[Step (S3)]

The outline of a process (S3) is shown in FIG.

In step (S3), the first curable resin film (X1) is cured to obtain the wafer 30 for semiconductor chip manufacture on which the first cured resin film (r1) is formed.

The first cured resin film (r1) formed by curing the first curable resin film (X1) becomes stronger than the first curable resin film (X1) at room temperature. Therefore, the bump neck is favorably protected by forming the first cured resin film r1.

Curing of the first curable resin film (X1) can be performed by either thermal curing or curing by irradiation with energy rays, depending on the type of curable component contained in the first curable resin film (X1).

In addition, in this specification, an “energy ray” means an electromagnetic wave or a charged particle beam having energy quanta, and examples thereof include ultraviolet rays, electron beams, and the like, preferably ultraviolet rays.

As conditions in the case of thermal curing, the curing temperature is preferably 90°C to 200°C, and the curing time is preferably 1 hour to 3 hours.

As conditions in the case of performing hardening by energy-beam irradiation, it is set suitably according to the kind of energy-beam to be used. For example, when using ultraviolet light, the illuminance is preferably 170 mw/cm ² to 250 mw/cm ² , and the amount of light is preferably 300 mJ/cm ² to 3,000 mJ/cm ² .

Here, in the process of curing the first curable resin film (X1) to form the first cured resin film (r1), in step (S2), the groove portion 23 is filled with the first curable resin film (X1). It is preferable that the 1st curable resin film (X1) is a thermosetting resin film from a viewpoint of removing air bubbles etc. which may enter in dirt.

[Step (S4)]

An outline of step (S4) is shown in FIG. 6 .

In step S4, the part formed in the groove part 23 among the 1st cured resin film r1 of the wafer for semiconductor chip manufacture on which the 1st cured resin film r1 was formed is cut|disconnected along the division line.

Since the first cured resin film (r1) is formed by curing the curable resin film of the present invention, the breaking energy at 70°C of the first cured resin film (r1) satisfies 10.0 MJ/m ³ or less. do. Therefore, in the step (S4), the cutting debris generated when cutting the portion formed in the groove portion 23 of the first cured resin film r1 along the line to be divided is reduced, and the cutting debris stays. It can make it difficult to remain as water. Therefore, it is difficult for residues to adhere to the cut surface of the wafer, and a semiconductor chip with excellent processing quality is obtained.

Cutting is performed by blade dicing. Thereby, the semiconductor chip 40 in which at least bump formation surface 21a and side surface are coat|covered with the 1st cured resin film r1 can be obtained.

The semiconductor chip 40 has excellent strength because the bump formation surface 21a and side surfaces are covered with the first cured resin film r1. In addition, since the bump formation surface 21a and the side surface are continuously and continuously covered with the first cured resin film r1, the joint surface (interface) between the bump formation surface 21a and the first cured resin film r1 This is not exposed in the side surface of the semiconductor chip 40. Among the bonding surfaces (interfaces) between the bump formation surface 21a and the first cured resin film r1, the exposed portion exposed on the side surface of the semiconductor chip 40 tends to be the starting point of film peeling. Since the exposed portion is not present in the semiconductor chip 40 of the present invention, film separation from the exposed portion is a process of cutting the wafer 30 for semiconductor chip production to manufacture the semiconductor chip 40, or after fabrication. difficult to occur in Therefore, the semiconductor chip 40 in which peeling of the 1st cured resin film (r1) as a protective film was suppressed is obtained.

Further, in the step (S4), the portion formed in the groove portion 23 of the first cured resin film r1 of the wafer 30 for semiconductor chip production on which the first cured resin film r1 is formed is divided into a line to be divided. When cutting along, it is preferable that the 1st cured resin film (r1) is transparent. Since the semiconductor wafer 21 can be seen through when the first cured resin film r1 is transparent, the visibility of the line to be divided is ensured. Therefore, it becomes easy to cut along the division line.

[Process (S-BG)]

The outline of the process (S-BG) is shown in FIG. 7 .

In the step (S-BG), as shown in Fig. 7(1-a), first, the back surface 21b of the semiconductor chip manufacturing wafer 30 is ground in a state where the first composite sheet α1 is attached. . "BG" in Fig. 7 means back grind. Next, as shown in Fig. 7(1-b), the first peeling sheet Y1 is peeled from the first composite sheet α1.

The amount of grinding at the time of grinding the back surface 21b of the wafer 30 for semiconductor chip production should just be the quantity which exposes the bottom of the groove part 23 of the wafer 30 for semiconductor chip production at least, but it grinds further and semiconductor chip Together with the wafer 30 for production, the first curable resin film X1 or the first cured resin film r1 embedded in the groove portion 23 may also be ground.

The step (S-BG) may be performed after the step (S2) and before the step (S3), or may be performed after the step (S3) and before the step (S4). You may carry out in a process (S4). Especially, from the viewpoint of making it easier to exhibit the effect of the present invention, it is preferable to carry out in the step (S4) after the step (S3) and before the step (S4).

[Process (T)]

In one aspect of the method for manufacturing a semiconductor chip of the present invention, it is preferable to further include the following step (T).

Step (T): Step of forming a second cured resin film (r2) on the back surface of the wafer for semiconductor chip production

According to the manufacturing method concerning the said embodiment, the semiconductor chip 40 in which at least bump formation surface 21a and side surface are covered with the 1st cured resin film r1 can be obtained. However, the back surface of the semiconductor chip 40 is exposed. Therefore, from the viewpoint of protecting the back surface of the semiconductor chip 40 and further improving the strength of the semiconductor chip 40, it is preferable to perform the step (T).

More specifically, the step (T) preferably includes the following step (T1) and the following step (T2) in this order.

Step (T1): Step of attaching the second curable resin film (X2) to the back surface of the wafer for semiconductor chip manufacturing

Step (T2): Step of curing the second curable resin film (X2) to form a second cured resin film (r2)

In addition, in step (T1), you may use the 2nd composite sheet (alpha)2 which has a laminated structure in which the 2nd peeling sheet (Y2) and the 2nd curable resin film (X2) were laminated|stacked. In detail, the step (T1) is a second composite sheet (α2) having a laminated structure in which a second peeling sheet (Y2) and a second curable resin film (X2) are laminated on the back surface of a wafer for semiconductor chip production, It is preferable to set it as the process of sticking the said 2nd curable resin film (X2) as a sticking surface.

In this case, the timing of peeling the 2nd peeling sheet Y2 from the 2nd composite sheet (alpha)2 may be between a process (T1) and a process (T2), or the latter of a process (T2) may be sufficient as it.

Here, in the case of using the second composite sheet (α2) in the step (T1), while the release sheet (Y2) included in the second composite sheet (α2) supports the second curable resin film (X2), It is preferable to have both functions as a dicing sheet.

Further, in step S4, the second composite sheet α2 is affixed to the back surface 21b of the semiconductor wafer 30 on which the first cured resin film r1 is formed, thereby performing singulation by dicing. When doing, the 2nd peeling sheet Y2 functions as a dicing sheet, and it becomes easy to perform dicing.

Here, when the step (S3) is performed after the step (S-BG), the step (T1) is performed before the step (S3), and then the step (S3) and the step (T2) are simultaneously performed. you can do it That is, the first curable resin film (X1) and the second curable resin film (X2) may be collectively cured simultaneously. In this way, the number of curing treatments can be reduced.

[Step (U)]

In one aspect of the manufacturing method of the semiconductor chip of this invention, you may further include the following process (U).

Step (U): The first cured resin film (r1) covering the top of the bump or the first cured resin film (r1) adhering to a part of the top of the bump is removed to expose the top of the bump. the process of making

As an exposure process which exposes the top part of a bump, etching process, such as a wet etching process and a dry etching process, is mentioned, for example.

Here, as a dry etching process, a plasma etching process etc. are mentioned, for example.

In addition, the exposure treatment may be performed for the purpose of retracting the protective film until the top of the bump is exposed when the top of the bump is not exposed on the surface of the protective film.

The timing of performing the step (U) is not particularly limited as long as the first cured resin film (r1) is exposed, and after the step (S3) and before the step (S4), the release sheet (Y1 ) and a state in which the back grind sheet is not attached.

[Semiconductor Chip]

The semiconductor chip of the present invention has a bump formation surface provided with bumps, and has a cured resin film obtained by curing the curable resin film of the present invention on both the bump formation surface and the side surface.

The semiconductor chip of the present invention is obtained by cutting a cured resin film embedded in a groove portion formed in a wafer for semiconductor chip production along a line to be divided, and separating it into pieces. Since the cured resin film is a cured product of the curable resin film described above, cutting debris generated when cutting the cured resin film along the line along which the cured resin film is to be divided is reduced, and the cutting debris can be made difficult to remain as a residue. . Therefore, the semiconductor chip of the present invention is difficult to adhere to residues and has excellent processing quality.

Example

Next, the present invention will be specifically described by examples, but the present invention is not limited to the following examples.

1. Raw materials for production of composition for forming curable resin film

The raw material used for manufacture of the composition for forming a curable resin film is shown below.

(1) polymer component (A)

-(A)-1: Polyvinyl butyral having structural units represented by the following formulas (i)-1, (i)-2 and (i)-3 ("S-REC BL manufactured by Sekisui Chemical Industry Co., Ltd.) -10”, weight average molecular weight 25000, glass transition temperature 59 ° C)

(A)-2: Polyarylate ("Unified (registered trademark) M-2040" manufactured by Unitica Co., Ltd.)

[Formula 2]

(In the formula, l ₁ is about 28, m ₁ is 1 to 3, and n ₁ is an integer of 68 to 74.)

(thermosetting component (B))

(2) Epoxy Resin (B1)

[liquid epoxy resin]

(B1)-1: Liquid modified bisphenol A type epoxy resin ("Epiclon EXA-4850-150" manufactured by DIC Co., Ltd., number average molecular weight 900, epoxy equivalent 450 g/eq)

[Solid Epoxy Resin]

(B1)-2: Naphthalene type epoxy resin (“Epiclon HP-4710” manufactured by DIC Co., Ltd., epoxy equivalent 170 g/eq)

(B1)-3: naphthalene type epoxy resin (“Epiclon HP-5000” manufactured by DIC Co., Ltd., epoxy equivalent 252 g/eq)

(B1)-4: Fluorene skeleton type epoxy resin ("OGSOL CG500" manufactured by Osaka Gas Chemical Co., Ltd., epoxy equivalent 300 g/eq)

(3) heat curing agent (B2)

(B2)-1: O-cresol type novolak resin ("Phenolite KA-1160" manufactured by DIC Co., Ltd., hydroxyl equivalent 117 g/eq)

(4) Curing Accelerator (C)

(C)-1: 2-phenyl-4,5-dihydroxymethylimidazole ("Curesol 2PHZ-PW" manufactured by Shikoku Kasei Industrial Co., Ltd.)

(5) Filler (D)

(D)-1: Spherical silica modified with an epoxy group ("Admanano YA050C-MKK" manufactured by Admatex Co., Ltd., average particle diameter 50 nm)

(6) Additives (G)

(G)-1: Surfactant (acrylic polymer, "BYK-361N" manufactured by BYK)

・(G)-2: Silicone oil (aralkyl-modified silicone oil, manufactured by Momentive Performance Materials Japan Joint Stock Company "XF42-334")

2. Examples 1 to 5 and Comparative Examples 1 and 2

2-1. Example 1

(1) Preparation of composition (1) for forming a thermosetting resin film

Polymer component (A)-2 (100 parts by mass), epoxy resin (B1)-1 (295 parts by mass), epoxy resin (B1)-4 (210 parts by mass), heat curing agent (B2)-1 (162 parts by mass) ), curing accelerator (C)-1 (2 parts by mass), filler (D)-1 (199 parts by mass), additive (G)-1 (22 parts by mass), and additive (G)-2 (2 parts by mass) ) was dissolved or dispersed in methyl ethyl ketone and stirred at 23°C to obtain a composition for forming a thermosetting resin film (1) having a total concentration of 60% by mass of all components other than the solvent. Incidentally, all of the compounding amounts of components other than the solvent shown here are the compounding amounts of the target object without including the solvent.

(2) Manufacture of thermosetting resin film

The composition (1 ) was applied and heat-dried at 120°C for 2 minutes to form a thermosetting resin film having a thickness of 45 µm.

2-2. Examples 2 to 5 and Comparative Examples 1 and 2

Types and blending amounts of the components at the time of production of the composition for forming a thermosetting resin film (1) so that the types and contents of the components contained in the composition for forming a thermosetting resin film (1) are as shown in Table 1 described later A thermosetting resin film having a thickness of 45 µm was formed in the same manner as in Example 1 except that either or both of the above were changed.

In addition, the description of "-" in the component column in Table 1 means that the composition for forming a thermosetting resin film does not contain the component.

3. Evaluation

The following evaluation was performed using the thermosetting resin film obtained above. A result is shown in Table 2.

3-1. Calculation of cross-linking density

The crosslinking density was calculated from the following formula.

[Equation 1]

3-2. Measurement of breaking energy (E) and breaking elongation (T), calculation of T×E

Five thermosetting resin films with a thickness of 45 μm were laminated at 60° C. to prepare a laminated film with a thickness of 225 μm. After heating and hardening this laminated film for 240 minutes under the conditions of a temperature of 130 ° C. and a pressure of 0.5 MPa, it is placed on a dicing tape ("D-676H" manufactured by Lintec Co., Ltd.), and then a dicing device (Disco Co., Ltd.) Production "DFD6362") was used, and grinding was performed under the conditions of a rotation speed of 30000 rpm, a feed rate of 10 mm/sec, and a cut amount of 20 µm to prepare a test piece having a width of 3 mm and a length of 100 mm.

Tensilon with thermostat (Tensilon universal testing machine (manufactured by Orientec Co., Ltd. "RTG-1210"), thermostat for testing machine (manufactured by Orientec Co., Ltd. "TKC-R3T-G-S")) The test piece was installed so as to be 50 mm long, and the elongation at break (T) and the energy at break (E) were measured under conditions of a temperature of 70°C and a speed of 200 mm/min. TxE was calculated from the obtained values of elongation at break (T) and energy at break (E).

3-3. Measurement of Gc1 and Gc300 of curable resin film, calculation of X value

20 sheets of thermosetting resin films with a thickness of 45 μm were prepared. Next, by laminating these thermosetting resin films and cutting the obtained laminated film into a disc shape with a diameter of 25 mm, a test piece of a thermosetting resin film having a thickness of 900 µm was produced.

The attachment point of the test piece in the viscoelasticity measuring device (“MCR301” manufactured by Antonfa Co.) is kept warm at 80° C. in advance, and the test piece of the thermosetting resin film obtained above is placed on this attachment point. By pressing the measuring jig against the upper surface of the test piece, the test piece was fixed to the installation point.

Next, under conditions of a temperature of 90°C and a measurement frequency of 1 Hz, the strain generated in the test piece was increased stepwise in the range of 0.01% to 1000%, and the storage elastic modulus Gc of the test piece was measured. Then, the X value was calculated from the measured values of Gc1 and Gc300.

3-4. Evaluation of embedding into grooves and exudation from wafer end

(1) Preparation of wafers for semiconductor chip manufacturing

As a wafer for semiconductor chip production, a 12-inch silicon wafer (wafer thickness: 750 µm) obtained by half-cutting a line to be divided was used. The width of the half-cut portion of the silicon wafer (the width of the groove portion) was 60 μm, and the depth of the groove was 230 μm.

(2) Evaluation method

One side of the 45 μm-thick thermosetting resin film was affixed to the front surface side (half-cut formation surface) of the wafer for semiconductor chip production while pressing under the following conditions.

Attachment device: BG tape laminator ("RAD-3510F/8" manufactured by Lintec Co., Ltd.)

Adhesion pressure: 0.5 MPa

· Attachment time: 43 seconds

·Paste speed: 7 mm/sec

・Attachment temperature: 80 ℃

Roller attachment height: -200 mm

Next, the wafer for semiconductor chip production to which the thermosetting resin film was affixed was heated and cured under conditions of a temperature of 130°C and a pressure of 0.5 MPa for 4 hours to form a cured resin film. Then, the wafer for semiconductor chip production was cut from the half-cut formation surface toward the back surface, and the embedding of the cured resin film in the groove portion of the half-cut portion was observed with an optical microscope ("VHX-100" manufactured by Keyence Corporation). In addition, the presence or absence of exudation of the cured resin film from the edge of the wafer was visually observed.

The evaluation criteria of embedding property were as follows.

S: No deformation was observed in the shape of the cured resin film, and the embedding property was the best.

A: Slight deformation is seen in the shape of the cured resin film near the entrance of the groove, but the embedding property is good.

B: The embedding property is poor.

3-5. Confirmation of the presence of residues, evaluation of processing quality

Five thermosetting resin films with a thickness of 45 μm were laminated at 60° C., and then cut to a size of 5 cm in length and 5 cm in width to prepare a laminated film with a thickness of 225 μm. After heating and hardening this laminated film for 240 minutes under conditions of a temperature of 130°C and a pressure of 0.5 MPa, it was affixed to a dicing tape (“D-676H” manufactured by Lintec Co., Ltd.). Next, using a dicing device ("DFD6362" manufactured by Disco Co., Ltd., blade: ZH05-SD1500-N1-50-27HECC, blade width 0.03 mm), the surface of the laminated film opposite to the dicing tape sticking surface was ground under the conditions of a rotation speed of 30000 rpm, a feed speed of 30 mm/sec, and an amount of cut of 20 μm, and was singulated into rectangular resin-only chips (hereinafter simply referred to as chips) of 2 mm in length and 2 mm in width.

The surface of the laminated film on which the dicing line was formed (surface opposite to the surface on which the dicing tape was applied) was observed with a digital microscope (“VHX-7000” manufactured by Keyence Corporation) to confirm the presence or absence of residues on the dicing line did In addition, the result is shown in "retained matter surface side" of Table 2.

Next, using a UV irradiation device ("RAD-2000F/12" manufactured by Lintec Co., Ltd.) from the back side (dicing tape sticking surface) of the laminated film, an illuminance of 230 mW/cm ² and a light amount of 190 mJ/cm ² After irradiating with ultraviolet rays under conditions of, the surface of the laminated film (surface opposite to the dicing tape sticking surface) was transferred toward a tape for semiconductor processing ("D-210" manufactured by Lintec Co., Ltd.). From the back side of the laminated film transferred to the semiconductor processing tape (dicing tape sticking surface), the chip surrounded by the dicing line was observed with a digital microscope ("VHX-7000" manufactured by Keyence Corporation), and the residue of the chip The presence or absence of deformation was evaluated according to the following criteria. In addition, the ratio of deformation of the chip was calculated from the following formula. The results are shown in Table 2 on the "retained material back side".

[Equation 2]

In the above formula, Ha is the blade width (mm) of the blade used for dicing, and is 0.03 mm in this evaluation. Hb is the kerf width (mm) of the dicing line measured according to the following procedure.

The chip-to-chip distance (referred to as kerf width) between the chips cut into pieces by the dicing device and the chips adjacent to one side of the chip was observed with a digital microscope, and the distance at the narrowest point was measured. This was repeated for 4 chips, and the average value (mm) was calculated.

[Evaluation Criteria for Backside of Laminated Film]

0: No deformation is seen on the dicing line of the chip.

1: A strain of 1% or more and less than 20% was observed on the dicing line of the chip.

2: 20% or more and less than 50% distortion was observed in the dicing line of the chip.

3: A strain of 50% or more was observed on the dicing line of the chip.

Next, using a UV irradiation device (“RAD-2000F/12” manufactured by Lintec Co., Ltd.) from the tape side for semiconductor processing of the laminated film, under conditions of an illuminance of 230 mW/cm ² and a light amount of 190 mJ/cm ² , ultraviolet rays were applied. After irradiating, the chips surrounded by the dicing line were picked up. The side surface of the chip was observed using a scanning electron microscope (SEM, “VE-9700” manufactured by Keyence Co., Ltd.) in a direction forming an angle of 45° from the vertical direction to the upper surface of the chip, and the following criteria were met. Processing quality was evaluated by In addition, the ratio of contamination on the edge of the chip and the ratio of contamination on the side of the chip were calculated from the following formula.

[Equation 3]

In the above formula, Ta is the thickness (μm) of the chip after singling, and is 225 μm in this evaluation. Tb is an average value (µm) obtained by measuring the width (perpendicular to the chip plane) of the region to which the cutting chips or residues adhered at the corner of the chip after singulation was measured for 4 chips.

[Equation 4]

In the above formula, Ta is the thickness (μm) of the chip after singulation, and is 225 μm in this evaluation. Tc is an average value (µm) obtained by measuring the width (perpendicular to the chip plane) of the area where the cutting chips or residues adhered on the side surface of the chip after singulation was measured for 4 chips.

[Evaluation of chip edges and sides]

Evaluation (1): The side surface of the chip was observed, and the presence or absence of protrusion due to adhesion of cutting chips or residue was confirmed.

Evaluation (2): Contamination of chip edges

0: Protrusion due to cutting chips or residues is not seen on the edge of the chip.

1: Protrusion due to cutting chips or residues was observed on the edge of the chip, and the protrusion contaminated the edge of the chip by 1% or more and less than 20%.

2: Protrusion due to cutting scraps or residues was observed on the edge of the chip, and the protrusion contaminated the edge of the chip by 20% or more and less than 50%.

3: Protrusion due to cutting chips or residues was observed on the edge of the chip, and the protrusion contaminated 50% or more of the edge of the chip.

Evaluation (3): Contamination on the side of the chip

0: No cutting chips or residues are seen on the side of the chip.

1: On the side surface of the chip, cutting scraps or residues were observed, and the cutting debris or residues contaminated the chip side surface by 1% or more and less than 20%.

2: On the side surface of the chip, cutting scraps or residues were observed, and the cutting debris or residues contaminated the chip side surface by 20% or more and less than 50%.

3: On the side surface of the chip, cutting scraps or residues were observed, and 50% or more of the cutting chips or residues were contaminating the chip side surface.

From Examples 1 to 5, by using a curable resin film having a breaking energy of 10.0 MJ/m ³ or less at 70°C after curing for forming a protective film on a semiconductor chip, there is little adhesion of cutting scraps and residues, and a semiconductor with excellent processing quality It can be seen that chips are obtained.

10, 20: composite sheet
30: wafer for semiconductor chip manufacturing
40: semiconductor chip
1,11: release sheet
2, 12: curable resin film
3, 13: description
4, 14: exfoliation layer
15: middle layer
21: semiconductor wafer
21a: bump formation surface
21b: back side
22 : bump
23: groove
X1: first curable resin film
Y1: 1st peeling sheet
r1: First cured resin film
α1: first composite sheet
X2: second curable resin film
Y2: 2nd peeling sheet
r2: Second cured resin film
α2: Second composite sheet

Claims (8)

A curable resin film used to form a cured resin film as a protective film on both the bump formation surface and the side surface of a semiconductor chip having a bump formation surface with bumps, comprising:
The curable resin film whose breaking energy at 70°C after curing of the curable resin film is 10.0 MJ/m ³ or less. According to claim 1,
A curable resin film having a thickness of 30 μm or more. A composite sheet having a laminated structure in which the curable resin film according to claim 1 or 2 and a release sheet are laminated. According to claim 3,
The composite sheet wherein the release sheet has a substrate and a release layer, and the release layer faces the curable resin film. According to claim 4,
A composite sheet further comprising an intermediate layer between the substrate and the release layer. According to claim 4 or 5,
A composite sheet in which the release layer is a layer formed of a composition containing an ethylene-vinyl acetate copolymer. Including the following steps (S1) to (S4) in this order,
Step (S1): Step of preparing a wafer for semiconductor chip manufacturing in which grooves as division lines are formed on the bump formation surface of a semiconductor wafer having a bump formation surface with bumps without reaching the back surface
Step (S2): pressing and attaching the curable resin film according to claim 1 or 2 to the bump formation surface of the wafer for semiconductor chip production, and applying the bump formation surface of the wafer for semiconductor chip production to the curable resin film A process of burying the curable resin film in the groove portion formed in the wafer for semiconductor chip manufacturing while coating with
Step (S3): A step of curing the curable resin film to obtain a semiconductor chip manufacturing wafer having a cured resin film formed thereon
Step (S4): A step of singling the semiconductor chip manufacturing wafer on which the cured resin film is formed along the line to be divided to obtain a semiconductor chip having at least the bump formation surface and side surface covered with the cured resin film.
Further, after the step (S2) and before the step (S3), after the step (S3) and before the step (S4), or in the step (S4), the following step (S -BG), a method for manufacturing a semiconductor chip.
Process (S-BG): a process of grinding the back surface of the semiconductor chip manufacturing wafer A semiconductor chip having a cured resin film formed by curing the curable resin film according to claim 1 or 2 on both the bump formation surface and side surface of a semiconductor chip having a bump formation surface with bumps.