TW202145323A - Sheet for manufacturing semiconductor device, and method to manufacture the sheet for manufacturing semiconductor device by sequentially laminating the first adhesive layer, the film-like adhesive, the release film, the second adhesive layer, and the support substrate on a substrate - Google Patents
Sheet for manufacturing semiconductor device, and method to manufacture the sheet for manufacturing semiconductor device by sequentially laminating the first adhesive layer, the film-like adhesive, the release film, the second adhesive layer, and the support substrate on a substrate Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/40—Adhesives in the form of films or foils characterised by release liners
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Adhesive Tapes (AREA)
- Laminated Bodies (AREA)
Abstract
Description
本發明係關於一種半導體裝置製造用片以及半導體裝置製造用片之製造方法。 本申請案係基於2020年3月27日於日本提出申請之日本特願2020-058730號主張優先權,並將該申請案之內容援用於此。The present invention relates to a sheet for manufacturing a semiconductor device and a method for manufacturing the sheet for manufacturing a semiconductor device. This application claims priority based on Japanese Patent Application No. 2020-058730 filed in Japan on March 27, 2020, and the content of the application is incorporated herein by reference.
於製造半導體裝置時,會使用具膜狀接著劑之半導體晶片,該具膜狀接著劑之半導體晶片係具備半導體晶片、及設置該半導體晶片的內面之膜狀接著劑。When manufacturing a semiconductor device, a semiconductor wafer with a film-like adhesive is used, and the semiconductor wafer with a film-like adhesive includes a semiconductor wafer and a film-like adhesive provided on the inner surface of the semiconductor wafer.
作為具膜狀接著劑之半導體晶片之製造方法之一例,例如可列舉以下所示之方法。 首先,於半導體晶圓的內面貼附切割黏晶片(dicing die-bonding sheet)。作為切割黏晶片,例如可列舉具備支撐片、及設置於前述支撐片的面上之膜狀接著劑的切割黏晶片。支撐片能夠用作切割片。作為支撐片,存在多種例如具備基材及設置於前述基材的面上之黏著劑層的支撐片;僅由基材構成的支撐片等構成不同的支撐片。具備黏著劑層之支撐片之情況下,於黏著劑層中的與設有基材之側相反之側,設有膜狀接著劑。切割黏晶片係藉由膜狀接著劑而貼附於半導體晶圓的內面。As an example of the manufacturing method of the semiconductor wafer with a film-like adhesive, the method shown below is mentioned, for example. First, a dicing die-bonding sheet is attached to the inner surface of the semiconductor wafer. As a dicing bond wafer, the dicing bond wafer provided with a support sheet and the film-like adhesive provided on the surface of the said support sheet is mentioned, for example. The support sheet can be used as a cutting sheet. As the support sheet, there are various types of support sheets including a base material and an adhesive layer provided on the surface of the base material, and a support sheet composed of only the base material. In the case of a support sheet provided with an adhesive layer, a film-like adhesive is provided on the side opposite to the side where the base material is provided in the adhesive layer. The dicing die is attached to the inner surface of the semiconductor wafer by a film adhesive.
繼而,藉由刀片切割將支撐片上的半導體晶圓與膜狀接著劑一併切斷。半導體晶圓之「切斷」亦被稱為「分割」,藉此而半導體晶圓被單片化為目標半導體晶片。膜狀接著劑係沿著半導體晶片的外周被切斷。藉此,可獲得具膜狀接著劑之半導體晶片,並且可獲得具膜狀接著劑之半導體晶片群,上述具膜狀接著劑之半導體晶片係具備半導體晶片、及設置於該半導體晶片的內面之切斷後的膜狀接著劑,上述具膜狀接著劑之半導體晶片群係於支撐片上以整齊排列之狀態保持有多個這些具膜狀接著劑之半導體晶片。Next, the semiconductor wafer on the support sheet is cut together with the film-like adhesive by blade dicing. The "cutting" of the semiconductor wafer is also called "segmentation", whereby the semiconductor wafer is singulated into a target semiconductor wafer. The film-like adhesive is cut along the outer periphery of the semiconductor wafer. Thereby, a semiconductor wafer with a film-like adhesive can be obtained, and a group of semiconductor wafers with a film-like adhesive can be obtained, wherein the semiconductor wafer with a film-like adhesive includes a semiconductor wafer and is provided on the inner surface of the semiconductor wafer In the film-like adhesive after cutting, a plurality of these semiconductor wafers with the film-like adhesive are held in an aligned state on the support sheet.
繼而,將具膜狀接著劑之半導體晶片自支撐片扯離並拾取。於使用具備硬化性之黏著劑層的支撐片之情形時,此時藉由使黏著劑層硬化來降低黏著性,而拾取變容易。 藉由以上操作,獲得用於製造半導體裝置的具膜狀接著劑之半導體晶片。Then, the semiconductor wafer with the film-like adhesive is pulled off from the supporting sheet and picked up. In the case of using a support sheet having a hardening adhesive layer, at this time, by hardening the adhesive layer, the adhesiveness is reduced, and the pick-up becomes easy. Through the above operations, a semiconductor wafer with a film-like adhesive for manufacturing a semiconductor device was obtained.
作為具膜狀接著劑之半導體晶片之製造方法之另一例,例如可列舉以下所示之方法。 首先,於半導體晶圓的電路形成面貼附背面研磨帶(有時亦稱為別名:「表面保護帶」)。 繼而,於半導體晶圓的內部設定分割預定處,以該處所包含之區域為焦點,以聚焦於該焦點之方式照射雷射光,藉此於半導體晶圓的內部形成改質層。繼而,使用研磨機將半導體晶圓的內面加以磨削,藉此將半導體晶圓之厚度調節為目標值。藉由利用此時施加於半導體晶圓之磨削時之力,而於改質層之形成部位將半導體晶圓加以分割(單片化),製作多個半導體晶片。As another example of the manufacturing method of the semiconductor wafer with a film-like adhesive, the method shown below is mentioned, for example. First, a back grinding tape (sometimes called an alias: "surface protection tape") is attached to the circuit formation surface of the semiconductor wafer. Then, a predetermined dividing place is set inside the semiconductor wafer, and the area included in the place is used as a focal point, and laser light is irradiated in a manner of focusing on the focal point, thereby forming a modified layer inside the semiconductor wafer. Then, the inner surface of the semiconductor wafer is ground using a grinder, thereby adjusting the thickness of the semiconductor wafer to a target value. A plurality of semiconductor wafers are produced by dividing (separating) the semiconductor wafer at the site where the modified layer is formed by utilizing the force applied to the semiconductor wafer at the time of grinding.
繼而,於固定化在背面研磨帶上之這些所有半導體晶片的進行了上述磨削之面,貼附黏晶片。作為黏晶片,可列舉與前述切割黏晶片相同者。黏晶片有時如上文所述,光是於半導體晶圓之切割時不使用黏晶片,即能夠設計成與切割黏晶片具有同樣之構成。黏晶片亦藉由該黏晶片中的膜狀接著劑而穩定地貼附於半導體晶片的內面。Then, the adhesive wafers were attached to the surfaces of all of the semiconductor wafers immobilized on the back grinding tape, on which the above-mentioned grinding was performed. As the sticky wafer, the same as the above-mentioned dicing sticky wafer can be mentioned. Die-bond Sometimes, as mentioned above, it is possible to design the same structure as the dicing-die simply by not using the die-die during dicing of semiconductor wafers. The adhesive wafer is also stably attached to the inner surface of the semiconductor wafer by the film adhesive in the adhesive wafer.
繼而,自半導體晶片去掉背面研磨帶後,將黏晶片沿相對於該黏晶片的表面(例如膜狀接著劑對半導體晶片之貼附面)為平行之方向伸展,進行所謂的擴展,藉此沿著半導體晶片的外周切斷膜狀接著劑。此時之溫度可為常溫,亦可於低溫下進行。於低溫下進行之情形(冷擴展;Cool Expand),相較於在常溫下進行而能夠更容易地切斷膜狀接著劑。 藉由以上操作,而獲得具膜狀接著劑之半導體晶片,該具膜狀接著劑之半導體晶片係具備半導體晶片、及設置於該半導體晶片的內面之切斷後的膜狀接著劑。Then, after the back grinding tape is removed from the semiconductor wafer, the adhesive wafer is stretched in a direction parallel to the surface of the adhesive wafer (for example, the surface where the film adhesive is attached to the semiconductor wafer), and so-called expansion is performed, thereby extending along the surface of the wafer. The film-like adhesive is cut to adhere to the outer periphery of the semiconductor wafer. The temperature at this time may be normal temperature, or it may be carried out at low temperature. When performed at a low temperature (cold expansion; Cool Expand), the film-like adhesive can be cut more easily than when performed at normal temperature. Through the above operations, a semiconductor wafer with a film-like adhesive is obtained, which includes a semiconductor wafer and a cut film-like adhesive provided on the inner surface of the semiconductor wafer.
繼而,與前述採用刀片切割之情形同樣地,將具膜狀接著劑之半導體晶片自前述支撐片加以扯離並拾取,藉此穩定地獲得用於製造半導體裝置的具膜狀接著劑之半導體晶片。Then, as in the case of the aforementioned dicing with a blade, the semiconductor wafer with the film-like adhesive is torn off from the aforementioned support sheet and picked up, whereby a semiconductor wafer with a film-like adhesive for manufacturing a semiconductor device is stably obtained. .
所拾取之半導體晶片係藉由設置於該半導體晶片的內面之膜狀接著劑而黏晶於基板的電路形成面,視需要於該半導體晶片進而積層一個以上之其他半導體晶片,藉由打線接合等進行電性連接後,整體由樹脂密封。使用以此方式獲得之半導體封裝體,最終製造目標半導體裝置。The picked-up semiconductor wafer is bonded to the circuit formation surface of the substrate by the film-like adhesive provided on the inner surface of the semiconductor wafer, and if necessary, one or more other semiconductor wafers are laminated on the semiconductor wafer, and bonded by wire bonding. After the electrical connection is made, the whole is sealed with resin. Using the semiconductor package obtained in this way, a target semiconductor device is finally manufactured.
切割黏晶片及黏晶片均能夠用於製造具膜狀接著劑之半導體晶片,最終能夠製造目標半導體裝置。本說明書中,包括切割黏晶片及黏晶片而稱為「半導體裝置製造用片」。Both the dicing wafer and the wafer bonding can be used to manufacture semiconductor wafers with film-like adhesives, which can ultimately be used to manufacture target semiconductor devices. In this specification, the dicing and bonding wafers are referred to as "semiconductor device manufacturing wafers".
專利文獻1中,作為能夠藉由擴展而切斷的具備膜狀接著劑之黏晶片,揭示有一種切割-黏晶帶(相當於前述黏晶片),該切割-黏晶帶係將基材、黏著劑層、基材層(相當於中間層)及黏接著劑層(相當於前述膜狀接著劑)依序積層而構成,前述基材層具有特定範圍之拉伸特性。根據該黏晶片,藉由具備相當於中間層之前述基材層,而能夠將膜狀接著劑於該擴展時高精度地切斷。
另外,黏晶片等有時係連續地貼合於長條之剝離膜上,並捲成輥狀而供給。 [先前技術文獻] [專利文獻]In addition, a sticky wafer or the like may be continuously bonded to a long release film, rolled and supplied in a roll shape. [Prior Art Literature] [Patent Literature]
[專利文獻1]日本專利第5946650號公報。[Patent Document 1] Japanese Patent No. 5946650.
[發明所欲解決之課題][The problem to be solved by the invention]
例如,前述黏接著劑層(相當於前述膜狀接著劑)有時係配合成為使用對象之半導體晶圓等之形狀而預先經衝壓加工。另外,基材層(相當於中間層)亦可同樣地經衝壓加工。經衝壓加工之多餘部分(未貼附於半導體晶圓等之周緣部)會被去除,因而這些經衝壓加工之部分相較於周圍之部分而積層得更高。然而,此種源自各積層部分之層厚差異所致之段差有下述問題:於將半導體裝置製造用片捲成輥狀而供給時,各段差之位置偏離地重疊,容易成為捲印(亦稱為「捲痕」)之產生原因。For example, the above-mentioned adhesive layer (corresponding to the above-mentioned film-like adhesive) may be punched in advance according to the shape of a semiconductor wafer or the like to be used. In addition, the base material layer (corresponding to the intermediate layer) can also be punched in the same manner. Excessive portions (not attached to the peripheral portion of the semiconductor wafer, etc.) that have been punched are removed, so that these punched portions are stacked higher than the surrounding portions. However, such a level difference due to the difference in layer thickness of each build-up portion has the following problem: when the sheet for semiconductor device manufacturing is wound in a roll shape and supplied, the position of each level difference is deviate and overlapped, and it is likely to become a roll mark ( Also known as "roll marks") causes.
本發明係為了消除前述般之問題點而完成,目的在於提供一種捲印之產生得到抑制的半導體裝置製造用片以及半導體裝置製造用片之製造方法。 [用以解決課題之手段]The present invention has been made in order to solve the above-mentioned problems, and an object of the present invention is to provide a sheet for manufacturing a semiconductor device and a method for manufacturing the sheet for manufacturing a semiconductor device in which the occurrence of scribing is suppressed. [means to solve the problem]
本案發明人為了解決前述課題而進行了潛心研究,結果發現藉由使半導體裝置製造用片具備複合剝離膜,該複合剝離膜具有將剝離膜、第二黏著劑層及支撐基材依序積層之構成,並且將該複合剝離膜之厚度設為特定之值,從而解決了前述問題,以至完成了本發明。 亦即,本發明具有以下態樣。In order to solve the above-mentioned problems, the inventors of the present application have conducted intensive studies, and as a result, have found that a composite release film having a release film, a second adhesive layer, and a support substrate are sequentially laminated by providing a semiconductor device manufacturing sheet with a composite release film. The above-mentioned problems were solved by setting the thickness of the composite release film to a specific value, and the present invention was completed. That is, the present invention has the following aspects.
(1)一種半導體裝置製造用片,係具備基材、第一黏著劑層、膜狀接著劑、剝離膜、第二黏著劑層及支撐基材,並且係於前述基材上依序積層前述第一黏著劑層、前述膜狀接著劑、前述剝離膜、前述第二黏著劑層及前述支撐基材而構成;具有將前述剝離膜、前述第二黏著劑層及前述支撐基材依序積層之構成的複合剝離膜之厚度超過38μm。 (2)如前述(1)所記載之半導體裝置製造用片,其中於前述複合剝離膜,自積層有前述膜狀接著劑之側的面形成有切口部;前述切口部之切口深度超過25μm。 (3)如前述(2)所記載之半導體裝置製造用片,其中以前述複合剝離膜之厚度-前述切口深度所表示的切餘部之厚度之值為10μm以上。 (4)如前述(2)或(3)所記載之半導體裝置製造用片,其中前述剝離膜及前述第二黏著劑層之總厚之值大於前述切口深度之值。 (5)如前述(2)至(4)中任一項所記載之半導體裝置製造用片,其中於前述支撐基材未形成有前述切口部。 (6)如前述(1)至(5)中任一項所記載之半導體裝置製造用片,其中前述第二黏著劑層之厚度為2μm以上。 (7)如前述(1)至(6)中任一項所記載之半導體製造用片,其中於前述第一黏著劑層與前述膜狀接著劑之間積層有中間層。 (8)如前述(7)所記載之半導體裝置製造用片,其中前述中間層之面積及前述膜狀接著劑之面積均小於較這些層更靠基材側之層的至少一面之面積。 (9)如前述(7)或(8)所記載之半導體裝置製造用片,其中前述中間層及前述膜狀接著劑之總厚為15μm以上。 (10)如前述(1)至(9)中任一項所記載之半導體裝置製造用片,其中前述支撐基材之厚度為12μm以上。 (11)如前述(1)至(10)中任一項所記載之半導體裝置製造用片,其中前述複合剝離膜之厚度為130μm以下。 (12)如前述(1)至(11)中任一項所記載之半導體裝置製造用片,其係於長條狀之前述複合剝離膜上積層有前述基材、前述第一黏著劑層及前述膜狀接著劑,且以前述基材、前述第一黏著劑層及前述膜狀接著劑作為內側捲成輥而成之輥體。 (13)一種半導體裝置製造用片之製造方法,係製造如前述(1)至(12)中任一項所記載之半導體裝置製造用片,且前述製造方法包含:將前述基材及前述第一黏著劑層加以積層,獲得第一中間積層體;使得前述膜狀接著劑、前述剝離膜、前述第二黏著劑層及前述支撐基材依此順序進行積層,獲得第二中間積層體;以及將前述第一中間積層體與前述第二中間積層體加以貼合。 [發明功效](1) A sheet for manufacturing a semiconductor device, comprising a substrate, a first adhesive layer, a film-like adhesive, a release film, a second adhesive layer, and a support substrate, and the above-mentioned substrates are sequentially laminated on the substrate The first adhesive layer, the film-like adhesive, the release film, the second adhesive layer, and the support substrate are formed; the release film, the second adhesive layer, and the support substrate are sequentially laminated. The thickness of the composite release film constituted by it exceeds 38 μm. (2) The sheet for manufacturing a semiconductor device according to the above (1), wherein the composite release film has a cutout portion formed on the surface on which the film-like adhesive is laminated; the cutout portion has a cutout depth exceeding 25 μm. (3) The sheet for semiconductor device manufacturing according to the above (2), wherein the value of the thickness of the trimmed portion represented by the thickness of the composite release film - the depth of the incision is 10 μm or more. (4) The sheet for semiconductor device manufacturing according to the above (2) or (3), wherein the value of the total thickness of the release film and the second adhesive layer is greater than the value of the depth of the incision. (5) The sheet for manufacturing a semiconductor device according to any one of (2) to (4) above, wherein the support base is not formed with the cutout portion. (6) The sheet for semiconductor device manufacturing according to any one of the above (1) to (5), wherein the thickness of the second adhesive layer is 2 μm or more. (7) The sheet for semiconductor manufacturing according to any one of (1) to (6) above, wherein an intermediate layer is laminated between the first adhesive layer and the film-like adhesive. (8) The sheet for semiconductor device manufacturing according to the above (7), wherein the area of the intermediate layer and the area of the film-like adhesive are both smaller than the area of at least one surface of the layer on the substrate side than these layers. (9) The sheet for semiconductor device manufacturing according to the above (7) or (8), wherein the total thickness of the intermediate layer and the film-like adhesive is 15 μm or more. (10) The sheet for manufacturing a semiconductor device according to any one of (1) to (9) above, wherein the thickness of the support substrate is 12 μm or more. (11) The sheet for manufacturing a semiconductor device according to any one of (1) to (10) above, wherein the composite release film has a thickness of 130 μm or less. (12) The sheet for manufacturing a semiconductor device according to any one of (1) to (11) above, wherein the substrate, the first adhesive layer, and The film-like adhesive is a roll body formed by winding the base material, the first adhesive layer, and the film-like adhesive as an inner side. (13) A method of manufacturing a sheet for manufacturing a semiconductor device, which manufactures the sheet for manufacturing a semiconductor device according to any one of (1) to (12) above, wherein the manufacturing method comprises: combining the substrate and the first An adhesive layer is laminated to obtain a first intermediate laminate; the film adhesive, the release film, the second adhesive layer and the support substrate are laminated in this order to obtain a second intermediate laminate; and The said 1st intermediate laminated body and the said 2nd intermediate laminated body are bonded together. [Inventive effect]
根據本發明,可提供一種捲印之產生得到抑制的半導體裝置製造用片以及半導體裝置製造用片之製造方法。According to the present invention, it is possible to provide a sheet for manufacturing a semiconductor device and a method for manufacturing the sheet for manufacturing a semiconductor device, in which the occurrence of engraving is suppressed.
以下,說明本發明之半導體裝置製造用片及半導體裝置製造用片之製造方法之實施形態。Hereinafter, embodiments of the sheet for manufacturing a semiconductor device and a method for manufacturing the sheet for manufacturing a semiconductor device of the present invention will be described.
◇半導體裝置製造用片 [第一實施形態] 實施形態之半導體裝置製造用片係具備基材、第一黏著劑層、膜狀接著劑、剝離膜、第二黏著劑層及支撐基材,並且係於前述基材上依序積層前述第一黏著劑層、前述膜狀接著劑、前述剝離膜、前述第二黏著劑層及前述支撐基材而構成,具有將前述剝離膜、前述第二黏著劑層及前述支撐基材依序積層之構成的複合剝離膜之厚度超過38μm。◇Semiconductor device manufacturing sheet [First Embodiment] The sheet for semiconductor device manufacturing according to the embodiment includes a substrate, a first adhesive layer, a film adhesive, a release film, a second adhesive layer, and a support substrate, and the first above-mentioned first adhesive layer is sequentially laminated on the above-mentioned substrate. The adhesive layer, the film-like adhesive, the release film, the second adhesive layer, and the support substrate are formed, and the release film, the second adhesive layer, and the support substrate are sequentially laminated. The thickness of the composite release film exceeds 38μm.
實施形態之半導體裝置製造用片亦可於前述第一黏著劑層與前述膜狀接著劑之間積層有中間層。 本實施形態之半導體裝置製造用片係具備基材,並且於前述基材上依序積層第一黏著劑層、中間層、膜狀接著劑、剝離膜、第二黏著劑層及支撐基材而構成,具有將前述剝離膜、前述第二黏著劑層及前述支撐基材依序積層之構成的複合剝離膜之厚度超過38μm。In the sheet for semiconductor device manufacture of the embodiment, an intermediate layer may be laminated between the first adhesive layer and the film-like adhesive. The sheet for manufacturing a semiconductor device of the present embodiment includes a substrate, and a first adhesive layer, an intermediate layer, a film adhesive, a release film, a second adhesive layer, and a support substrate are laminated in this order on the substrate. The thickness of the composite release film having a structure in which the release film, the second adhesive layer, and the support substrate are sequentially laminated is more than 38 μm.
本實施形態之半導體裝置製造用片如前文所述,具備將剝離膜、第二黏著劑層及支撐基材依序積層而成之積層體(以下,有時將該積層體稱為「複合剝離膜」),且該積層體之厚度超過38μm,藉此即便於將半導體裝置製造用片捲成輥狀而以輥體之形式供給之情形時,捲印之產生仍得到抑制。可認為原因在於,在複合剝離膜具有於剝離膜進而積層有第二黏著劑層及支撐基材之構成,尤其藉由第二黏著劑層之緩衝作用,源自各層之總厚差異所致之段差變得不易影響經捲取而重疊之部分,使捲印之產生得到抑制。捲印係可藉由將輥體之輥捲繞鬆開,目視於膜狀接著劑等之中前述段差之重疊部分來確認。捲印之確認較佳為於容易產生捲印之輥體的芯部之附近進行。As described above, the sheet for manufacturing a semiconductor device of the present embodiment includes a laminate in which a release film, a second adhesive layer, and a support substrate are sequentially laminated (hereinafter, this laminate may be referred to as "composite peeling" in some cases). film”), and the thickness of the laminate exceeds 38 μm, whereby even when the sheet for semiconductor device manufacturing is rolled into a roll and supplied as a roll, the occurrence of engraving is suppressed. It can be considered that the reason is that the composite release film is composed of a second adhesive layer and a supporting substrate laminated on the release film, especially due to the buffering effect of the second adhesive layer, due to the difference in the total thickness of each layer. The level difference becomes less likely to affect the overlapped part by winding, so that the occurrence of roll marks can be suppressed. The roll printing system can be confirmed by unwinding the roll of the roll body and visually observing the overlapping portion of the above-mentioned step in the film adhesive or the like. The confirmation of the engraving is preferably performed in the vicinity of the core of the roll body where engraving is likely to occur.
於本說明書中,只要無特別說明,則「厚度」能以於隨機選出之5處測定厚度並加以平均而表示之值之形式,依據JIS(Japanese Industrial Standards;日本工業標準)K7130,使用恆壓厚度測定器而獲取。In this specification, unless otherwise specified, the "thickness" can be expressed as a value obtained by measuring the thickness at 5 randomly selected locations and averaging them, according to JIS (Japanese Industrial Standards; Japanese Industrial Standards) K7130, using constant pressure obtained with a thickness gauge.
實施形態之複合剝離膜亦可具備不相當於剝離膜、第二黏著劑層及支撐基材的任一層之其他層。然而,實施形態之半導體裝置製造用片較佳為如圖1所示,以直接接觸剝離膜15之狀態具備第二黏著劑層16,且以直接接觸第二黏著劑層16之狀態具備支撐基材17。The composite release film of the embodiment may be provided with another layer not corresponding to any one of the release film, the second adhesive layer, and the support substrate. However, as shown in FIG. 1 , the sheet for manufacturing a semiconductor device according to the embodiment preferably includes the second
對於本實施形態之半導體裝置製造用片,切割後之半導體晶圓亦成為較佳使用對象。此處,所謂切割後之半導體晶圓,可列舉:成為預先整齊排列有多個半導體晶片之狀態者;或者包含如此整齊排列之多個半導體晶片、與除此以外還包含半導體晶圓中的未進行分割為半導體晶片之區域者。The semiconductor wafer after dicing is also preferably used for the wafer for manufacturing a semiconductor device of the present embodiment. Here, the so-called diced semiconductor wafer includes a state in which a plurality of semiconductor wafers are arranged in advance, or a plurality of semiconductor wafers arranged in such a manner, and other semiconductor wafers that are not included in the semiconductor wafer. Divided into regions of semiconductor wafers.
半導體裝置製造用片之此種使用對象物例如係藉由如下半導體晶圓之切割而獲得。 亦即,首先於半導體晶圓的形成有電路之側之面貼附背面研磨帶。 繼而,以聚焦在設定於半導體晶圓的內部之焦點之方式照射雷射光,藉此於半導體晶圓的內部形成改質層。此時之焦點的位置為半導體晶圓的分割預定位置,係以由半導體晶圓獲得目標大小、形狀及個數之半導體晶片之方式設定。 繼而,使用研磨機將半導體晶圓中的與電路形成面為相反側之面(亦即內面)加以磨削。藉此,將半導體晶圓之厚度調節為目標值,並且利用此時施加於半導體晶圓之磨削時之力,而藉此於改質層的形成部位分割半導體晶圓,形成多個半導體晶片。半導體晶圓的改質層係與半導體晶圓的其他處不同,因雷射光之照射而變質,強度變弱。因此,藉由對形成有改質層之半導體晶圓施加力,力被施加於半導體晶圓內部的改質層,於該改質層之部位中使半導體晶圓斷裂,獲得多個半導體晶片。 再者,視該磨削時之條件,有時亦於半導體晶圓的一部分區域中,未進行分割為半導體晶片。Such a use object of the sheet for semiconductor device manufacturing is obtained, for example, by dicing of the following semiconductor wafers. That is, first, the back grinding tape is attached to the surface of the semiconductor wafer on which the circuit is formed. Then, laser light is irradiated so as to be focused on a focal point set inside the semiconductor wafer, thereby forming a modified layer inside the semiconductor wafer. The position of the focal point at this time is the predetermined dividing position of the semiconductor wafer, and is set so that the semiconductor wafers of the desired size, shape and number are obtained from the semiconductor wafer. Next, the surface (that is, the inner surface) on the opposite side to the circuit formation surface of the semiconductor wafer is ground using a grinder. Thereby, the thickness of the semiconductor wafer is adjusted to a target value, and the force applied to the semiconductor wafer at the time of grinding is used to divide the semiconductor wafer at the site where the modified layer is formed to form a plurality of semiconductor wafers. . Unlike other parts of the semiconductor wafer, the modified layer of the semiconductor wafer is degraded by the irradiation of laser light, and its strength is weakened. Therefore, by applying a force to the semiconductor wafer on which the modified layer is formed, the force is applied to the modified layer inside the semiconductor wafer, and the semiconductor wafer is fractured in the portion of the modified layer to obtain a plurality of semiconductor wafers. In addition, depending on the conditions at the time of grinding, a part of the semiconductor wafer may not be divided into semiconductor wafers.
再者,實施形態之半導體裝置製造用片的使用對象物之切割方法並無特別限制。例如,作為將半導體晶圓分割為半導體晶片之方法,已知有使用刀片之刀片切割、利用雷射照射之雷射切割、或藉由噴附含有研磨劑之水而進行之水切割、利用電漿照射之電漿切割等各切割,對於任一方法均可應用實施形態之半導體裝置製造用片。In addition, the dicing method in particular of the object of use of the sheet for semiconductor device manufacture of embodiment is not restrict|limited. For example, as a method of dividing a semiconductor wafer into semiconductor wafers, blade dicing using a blade, laser dicing by laser irradiation, water dicing by spraying water containing an abrasive, For each dicing such as plasma dicing by plasma irradiation, the sheet for semiconductor device manufacturing of the embodiment can be applied to any method.
以下,一邊參照圖式,一邊針對前述半導體裝置製造用片加以詳細說明。再者,以下之說明所用之圖有時為了容易理解實施形態之特徵,為方便起見而將成為主要部件之部分放大表示,各構成要素之尺寸比率等未必與實際相同。Hereinafter, the above-mentioned sheet for manufacturing a semiconductor device will be described in detail with reference to the drawings. In addition, in the drawings used in the following description, in order to facilitate the understanding of the characteristics of the embodiment, the main parts may be enlarged and shown for convenience, and the dimensional ratios and the like of each component are not necessarily the same as the actual ones.
圖1係示意性地表示本發明之一實施形態之半導體裝置製造用片的剖面圖。 再者,圖2以後之圖中,對與已說明完畢之圖所示相同之構成要素標注與已說明完畢之圖之情形相同的符號,並省略該構成要素之詳細說明。FIG. 1 is a cross-sectional view schematically showing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. 2 and later, the same components as those shown in the already described drawings are denoted by the same reference numerals as in the already described drawings, and detailed descriptions of the components are omitted.
此處所示之半導體裝置製造用片100係具備基材11,且於基材11上依序積層第一黏著劑層12、膜狀接著劑14、剝離膜15、第二黏著劑層16及支撐基材17而構成。剝離膜、第二黏著劑層及支撐基材構成複合剝離膜20。The
圖2係示意性地表示本發明之一實施形態之半導體裝置製造用片的剖面圖。2 is a cross-sectional view schematically showing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention.
此處所示之半導體裝置製造用片101係具備基材11,且於基材11上依序積層第一黏著劑層12、中間層13、膜狀接著劑14、剝離膜15、第二黏著劑層16及支撐基材17而構成。剝離膜、第二黏著劑層及支撐基材構成複合剝離膜20。半導體裝置製造用片101係半導體裝置製造用片100進而具備中間層13而成。以下,關於實施形態之半導體裝置製造用片之構成,以圖2所示之半導體裝置製造用片101為例進行說明。The
半導體裝置製造用片101中,於基材11的一面(以下,於本說明書中有時稱為「第一面」)11a上設有第一黏著劑層12,於第一黏著劑層12中的與設有基材11之側為相反側之面(以下,於本說明書中有時稱為「第一面」)12a上設有中間層13,於中間層13中的與設有第一黏著劑層12之側為相反側之面(以下,於本說明書中有時稱為「第一面」)13a上設有膜狀接著劑14,於膜狀接著劑14中的與設有中間層13之側為相反側之面(以下,於本說明書中有時稱為「第一面」)14a上設有複合剝離膜20。以此方式,半導體裝置製造用片101係將基材11、第一黏著劑層12、中間層13、膜狀接著劑14及複合剝離膜20依序於這些層之厚度方向積層而構成。In the
半導體裝置製造用片101係於去掉複合剝離膜20之狀態下,將膜狀接著劑14的第一面14a貼附於半導體晶圓、半導體晶片、或未完全分割之半導體晶圓(圖示省略)之內面而使用。The
於本說明書中,於半導體晶圓及半導體晶片的任一種情形時,均將該形成有電路之側之面稱為「電路形成面」,將與電路形成面為相反側之面稱為「內面」。In this specification, in the case of either a semiconductor wafer or a semiconductor chip, the surface on the side where the circuit is formed is referred to as the "circuit formation surface", and the surface on the opposite side to the circuit formation surface is referred to as the "inner surface". noodle".
於本說明書中,有時將包含基材及第一黏著劑層之積層體稱為「支撐片」。圖2中,標注符號1表示支撐片。
另外,有時將具有使基材、第一黏著劑層及中間層依序於這些層之厚度方向積層之構成的積層物稱為「積層片」。圖2中,標注符號10表示積層片。前述支撐片及中間層之積層物包含於前述積層片。In this specification, the laminated body containing a base material and a 1st adhesive bond layer may be called a "support sheet". In FIG. 2,
圖3為圖2所示之半導體裝置製造用片之平面圖。
自中間層13及膜狀接著劑14之上方朝下看而俯視中間層13及膜狀接著劑14時之平面形狀均為圓形,中間層13之直徑與膜狀接著劑14之直徑相同。
而且,半導體裝置製造用片101中,中間層13及膜狀接著劑14係以這些層之中心為一致之方式配置,換言之,係以中間層13及膜狀接著劑14之外周之位置於這些層之徑向均一致之方式配置。FIG. 3 is a plan view of the wafer for manufacturing a semiconductor device shown in FIG. 2 .
The planar shapes of the
作為構成半導體製造用片之各層之較佳形狀,係圓形之支撐片1、與較支撐片1更為小徑之圓形之中間層13及膜狀接著劑14積層為同心圓狀。As a preferable shape of each layer constituting the sheet for semiconductor manufacturing, a
圖2所示之半導體製造用片101中,中間層13的第一面13a及膜狀接著劑14的第一面14a均面積小於第一黏著劑層12的第一面12a。而且,中間層13之寬度W13
之最大值(亦即直徑)及膜狀接著劑14之寬度W14
之最大值(亦即直徑)均小於第一黏著劑層12之寬度之最大值及基材11之寬度之最大值。因此,於半導體裝置製造用片101中,第一黏著劑層12的第一面12a之一部分未由中間層13及膜狀接著劑14覆蓋。於此種第一黏著劑層12的第一面12a中的未積層有中間層13及膜狀接著劑14之區域,係複合剝離膜20直接接觸而積層,於去掉複合剝離膜20之狀態下,該區域會露出(以下,於本說明書中有時將該區域稱為「非積層區域」)。
再者,於具備複合剝離膜20之半導體裝置製造用片101中,於第一黏著劑層12的未由中間層13及膜狀接著劑14覆蓋之區域,可如此處所示般存在未積層複合剝離膜20之區域,亦可不存在。In the
半導體裝置製造用片101可於膜狀接著劑14未切斷且貼附於上述半導體晶片等之狀態下,藉由將第一黏著劑層12的前述非積層區域之一部分貼附於用於固定半導體晶圓之環形框架等治具而固定。因此,無須於半導體裝置製造用片101另外設置用以將半導體裝置製造用片101固定於前述治具之治具用接著劑層。而且,由於無須設置治具用接著劑層,故而能夠價廉且有效率地製造半導體裝置製造用片101。The
以此方式,半導體裝置製造用片101藉由不具備治具用接著劑層而發揮有利效果,但亦可具備治具用接著劑層。於該情形時,治具用接著劑層係設置於構成半導體裝置製造用片101的任一層的表面之中的周緣部附近之區域。作為此種區域,可列舉第一黏著劑層12的第一面12a中之前述非積層區域等。In this manner, the
治具用接著劑層可為公知者,例如可為含有接著劑成分之單層結構,亦可為於成為芯材之片的兩面積層有含有接著劑成分之層的多層結構。The adhesive layer for a jig may be a well-known one, for example, a single-layer structure containing an adhesive component, or a multilayer structure having a layer containing an adhesive component on both surfaces of the sheet serving as the core material.
另外,於如後述般將半導體裝置製造用片101進行沿相對於該半導體裝置製造用片101之表面(例如第一黏著劑層12的第一面12a)為平行之方向伸展,進行所謂的擴展時,藉由在第一黏著劑層12的第一面12a存在前述非積層區域,而能夠容易地擴展半導體裝置製造用片101。而且,有時不僅能夠容易地切斷膜狀接著劑14,而且中間層13及膜狀接著劑14自第一黏著劑層12之剝離亦得到抑制。In addition, as described later, the
例如,本實施形態之半導體裝置製造用片亦可具備不相當於基材、第一黏著劑層、中間層、膜狀接著劑、複合剝離膜、治具用接著劑層的任一層之其他層。然而,實施形態之半導體裝置製造用片較佳為如圖2所示,以直接接觸基材之狀態具備第一黏著劑層,以直接接觸第一黏著劑層之狀態具備中間層,以直接接觸中間層之狀態具備膜狀接著劑,以直接接觸膜狀接著劑之狀態具備複合剝離膜。For example, the sheet for manufacturing a semiconductor device of the present embodiment may include other layers not corresponding to any of the substrate, the first adhesive layer, the intermediate layer, the film-like adhesive, the composite release film, and the adhesive layer for jigs . However, as shown in FIG. 2 , the sheet for manufacturing a semiconductor device according to the embodiment preferably includes a first adhesive layer in a state of direct contact with the base material, and an intermediate layer in a state of direct contact with the first adhesive layer, so as to directly contact the first adhesive layer. The state of the intermediate layer is provided with a film-like adhesive, and the state in which the intermediate layer is in direct contact with the film-like adhesive is provided with a composite release film.
例如,於本實施形態之半導體裝置製造用片中,中間層及膜狀接著劑之俯視形狀亦可為圓形以外之形狀,中間層及膜狀接著劑之俯視形狀可彼此相同,亦可不同。中間層之面積及膜狀接著劑之面積較佳為均小於較這些層更靠基材側之層的至少一面之面積。例如,中間層的第一面之面積及膜狀接著劑的第一面之面積較佳為均小於較這些層更靠基材側之層的面(例如第一黏著劑層的第一面)之面積。中間層及膜狀接著劑之俯視形狀可彼此相同,亦可不同。 再者,於實施形態之半導體裝置製造用片不具有中間層之情形時,較佳為膜狀接著劑之面積小於較該膜狀接著劑更靠基材側之層的至少一面之面積。例如,膜狀接著劑的第一面之面積較佳為小於基材側之層的面(例如第一黏著劑層的第一面)之面積。For example, in the sheet for manufacturing a semiconductor device of the present embodiment, the shape in plan view of the intermediate layer and the film-like adhesive may be a shape other than a circle, and the plan-view shapes of the intermediate layer and the film-like adhesive may be the same or different from each other. . Both the area of the intermediate layer and the area of the film-like adhesive are preferably smaller than the area of at least one surface of the layer on the substrate side than these layers. For example, the area of the first surface of the intermediate layer and the area of the first surface of the film-like adhesive are preferably both smaller than the surface of the layer closer to the substrate side than these layers (eg, the first surface of the first adhesive layer). area. The planar shape of the intermediate layer and the film-like adhesive may be the same or different from each other. Furthermore, when the sheet for manufacturing a semiconductor device of the embodiment does not have an intermediate layer, the area of the film-like adhesive is preferably smaller than the area of at least one surface of the layer on the substrate side than the film-like adhesive. For example, the area of the first surface of the film adhesive is preferably smaller than the area of the surface of the layer on the substrate side (eg, the first surface of the first adhesive layer).
中間層及膜狀接著劑之外周之位置可於這些層之徑向均一致,亦可不一致。 中間層之俯視形狀的外周之位置、及膜狀接著劑之俯視形狀的外周之位置較佳為均位於比起較這些層更靠基材側之層的至少一面之俯視形狀的外周更靠內側。例如,中間層之俯視形狀的外周之位置、及膜狀接著劑之俯視形狀的外周之位置較佳為均位於較支撐片之俯視形狀的外周之位置更靠內側。The positions of the intermediate layer and the outer periphery of the film-like adhesive may or may not be consistent in the radial direction of these layers. It is preferable that the position of the outer periphery of the plan view shape of the intermediate layer and the position of the outer periphery of the plan view shape of the film-like adhesive are located more inward than the outer periphery of the plan view shape of at least one side of the layer on the substrate side than these layers. . For example, it is preferable that the position of the outer periphery of the plan view shape of the intermediate layer and the position of the outer periphery of the plan view shape of the film adhesive are both located more inward than the position of the outer periphery of the plan view shape of the support sheet.
中間層13及膜狀接著劑14例如能夠藉由衝壓加工進行加工而製成任意形狀。於將中間層13及膜狀接著劑14設為圓形之情形時,較佳為使用對應形狀之衝壓刀進行衝壓加工為圓形。The
[第二實施形態]
圖4係示意性地表示本實施形態之半導體裝置製造用片102的剖面圖。圖5係圖4所示之半導體裝置製造用片102之切口部之放大圖。
半導體裝置製造用片102係具備基材11,且於基材11上依序積層第一黏著劑層12、中間層13、膜狀接著劑14、剝離膜15、第二黏著劑層16及支撐基材17而構成,具有將剝離膜15、第二黏著劑層16及支撐基材17依序積層之構成的複合剝離膜20之厚度超過38μm,於複合剝離膜20,自積層有膜狀接著劑14之側之面形成有切口部C。切口部C係沿著膜狀接著劑14的周緣部而形成。原因在於,實施形態之切口部C亦可於將積層於複合剝離膜20上之膜狀接著劑14加以衝壓加工時形成。因此,切口部C的內側輪廓線之形狀可與膜狀接著劑14之外側輪廓線之形狀一致,且可與中間層13及膜狀接著劑14之外側輪廓線之形狀一致。藉由以形成切口部C之方式進行衝壓加工,而能夠防止膜狀接著劑14之衝壓變得不完全。[Second Embodiment]
FIG. 4 is a cross-sectional view schematically showing the
圖5中表示形成於複合剝離膜20之前述切口部C之放大圖,將該切口部C之切口深度表示為D1。
再者,於本說明書中,複合剝離膜中之切口深度係指藉由利用電子顯微鏡進行剖面觀察而隨機測定10點形成於複合剝離膜之切口部的複合剝離膜之厚度方向之深度,並加以平均而得之值。
於以先前產品之不具有複合剝離膜之構成的剝離膜作為對象而獲取切口深度之情形時,可與前述同樣地對形成於剝離膜之切口部進行測定。In FIG. 5, the enlarged view of the said notch part C formed in the
於實施形態之半導體裝置製造用片之複合剝離膜中,於形成有前述切口部之情形時,前述切口部之切口深度較佳為超過25μm,更佳為27μm以上,進而較佳為30μm以上。
藉由切口深度為前述下限值以上,即便於重複進行衝壓加工之情形時,於切斷刀之切口對象處產生無法切斷處的頻率仍降低,反覆衝壓加工性提高。原因在於,藉由使切口深度較以往更深,即便用於衝壓加工之刀已經磨損,仍可防止衝壓變得不完全。
切口深度之上限值較佳為不使複合剝離膜20斷裂而未達複合剝離膜20之厚度。切口深度之上限值例如可為小於100μm,可為68μm以下,可為50μm以下,可為37μm以下。其中,切口深度之上限值可考慮下述切餘部之厚度而適當規定。
作為前述切口深度之數值範圍之一例,可為超過25μm至未達100μm,可為超過25μm至68μm以下,可為27μm以上至50μm以下,可為30μm以上至37μm以下。In the composite release film of the sheet for manufacturing a semiconductor device according to the embodiment, when the notch portion is formed, the notch depth of the notch portion is preferably more than 25 μm, more preferably 27 μm or more, and still more preferably 30 μm or more.
When the notch depth is greater than or equal to the aforementioned lower limit value, even when pressing is repeated, the frequency of occurrence of a point where cutting cannot be performed at the target of the notch of the cutting blade is reduced, and the repetitive press workability is improved. The reason is that by making the depth of the notch deeper than before, even if the blade used for the punching process is worn out, the punching can be prevented from becoming incomplete.
It is preferable that the upper limit of the depth of the incision does not break the
為了加深對先前之剝離膜的切口深度,剝離膜之厚度較厚係有利。於該方面而言,本實施形態之半導體裝置製造用片係將剝離膜作為前述複合剝離膜,故而能夠容易地設定相當於先前之剝離膜的複合剝離膜的各層之厚度或構成。 本實施形態之半導體裝置製造用片係兼顧了捲印產生之抑制、與反覆衝壓加工性之提高,非常優異。In order to deepen the incision depth to the previous release film, it is advantageous that the thickness of the release film is thicker. In this respect, since the sheet for semiconductor device manufacture of this embodiment uses a peeling film as the said composite peeling film, the thickness and structure of each layer of the composite peeling film corresponding to the previous peeling film can be easily set. The sheet for manufacturing a semiconductor device of the present embodiment is excellent in that both the suppression of the occurrence of scribbles and the improvement of the repeated punching workability are achieved.
另外,實施形態之複合剝離膜具有將剝離膜、前述第二黏著劑層及前述支撐基材依序積層之層結構,故而以形成於某層之切口部等為起點的破裂之影響不易擴大至複合剝離膜中之其他層,後述貼裝製程(Mounting Process)之反覆適性提高。In addition, the composite release film of the embodiment has a layered structure in which the release film, the second adhesive layer, and the support substrate are laminated in this order, so that the influence of cracks starting from a notch formed in a certain layer, etc. as a starting point is not easily extended to For other layers in the composite release film, the repeatability of the mounting process (Mounting Process) described later is improved.
剝離膜15及第二黏著劑層16之總厚之值較佳為大於前述切口深度之值。藉由設為此種構成,而防止於支撐基材17形成切口部C。於支撐基材17,較佳為未形成有切口部C。切口深度之值亦可大於剝離膜之厚度。
於形成有切口部C之部分,可能以切口部C作為起點而發生複合剝離膜被切開或裂開,但藉由防止於支撐基材17形成切口部C,較佳為具有未形成有切口部C之支撐基材17,而防止複合剝離膜20之斷裂。The value of the total thickness of the
圖5中,可將以D2表示之複合剝離膜之切餘部之厚度設為由「複合剝離膜之厚度-切口深度」所求出之值。
於如圖5般複合剝離膜20僅由只有剝離膜15、第二黏著劑層16及支撐基材17依序積層之構成所構成之情形時,切餘部之厚度可設為由「剝離膜15、第二黏著劑層16及支撐基材17之總厚-切口深度」所求出之值。In FIG. 5 , the thickness of the trimmed portion of the composite release film represented by D2 can be set to a value obtained from "the thickness of the composite release film - the depth of the incision".
In the case where the
切餘部之厚度並無特別限定,較佳為超過10μm,更佳為20μm以上,進而較佳為45μm以上。該切餘部之厚度之上限值係未達複合剝離膜之厚度,且成為複合剝離膜之厚度減去切口深度所得之值。 藉由切餘部之厚度為前述下限值以上,而防止下述情況:於使用半導體裝置製造用片時將複合剝離膜去掉時等,複合剝離膜以切口部為起點被切開或裂開。 實施形態之複合剝離膜具有將剝離膜、前述第二黏著劑層及前述支撐基材依序積層之層結構,故而即便於切餘部之厚度相對較小之情形時,仍有防止複合剝離膜被切開或裂開之效果優異之傾向。 切餘部之厚度之上限值並無特別限制,可為60μm以下,亦可為30μm以下,亦可為20μm以下,亦可為15μm以下。 作為複合剝離膜中之切餘部之厚度的數值範圍之一例,可為超過10μm至60μm以下,亦可為超過10μm至30μm以下,亦可為超過10μm至20μm以下,亦可為超過10μm至15μm以下。The thickness of the cut portion is not particularly limited, but is preferably more than 10 μm, more preferably 20 μm or more, and still more preferably 45 μm or more. The upper limit of the thickness of the cut-off portion is less than the thickness of the composite release film, and becomes the value obtained by subtracting the depth of the incision from the thickness of the composite release film. When the thickness of the cut portion is equal to or greater than the aforementioned lower limit value, the composite release film can be prevented from being cut or split from the cut portion when the composite release film is removed when the sheet for semiconductor device manufacturing is used. The composite release film of the embodiment has a layered structure in which the release film, the second adhesive layer and the support substrate are sequentially laminated, so even when the thickness of the cut portion is relatively small, the composite release film can be prevented from being damaged. Tendency to be excellent in cutting or splitting. The upper limit value of the thickness of the trimmed portion is not particularly limited, and may be 60 μm or less, 30 μm or less, 20 μm or less, or 15 μm or less. As an example of the numerical range of the thickness of the cut-off portion in the composite release film, it may be more than 10 μm to 60 μm or less, may be more than 10 μm to 30 μm or less, may be more than 10 μm to 20 μm or less, and may be more than 10 μm to 15 μm or less .
繼而,針對構成本發明之半導體裝置製造用片的各層加以更詳細說明。Next, each layer which comprises the sheet for semiconductor device manufacture of this invention is demonstrated in detail.
○基材 前述基材為片狀或膜狀。 前述基材之構成材料較佳為各種樹脂,具體而言,例如可列舉:聚乙烯(低密度聚乙烯(LDPE)、直鏈低密度聚乙烯(LLDPE)、高密度聚乙烯(HDPE等))、聚丙烯(PP)、聚丁烯、聚丁二烯、聚甲基戊烯、苯乙烯-乙烯丁烯-苯乙烯嵌段共聚物、聚氯乙烯、氯乙烯共聚物、聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯(PBT)、聚胺基甲酸酯、聚丙烯酸胺基甲酸酯、聚醯亞胺(PI)、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、乙烯-(甲基)丙烯酸共聚物及乙烯-(甲基)丙烯酸酯共聚物以外之乙烯共聚物、聚苯乙烯、聚碳酸酯、氟樹脂、這些任一種樹脂之氫化物、改質物、交聯物或共聚物等。○Substrate The aforementioned substrate is in the form of a sheet or a film. The constituent material of the aforementioned base material is preferably various resins, and specifically, for example, polyethylene (low density polyethylene (LDPE), linear low density polyethylene (LLDPE), high density polyethylene (HDPE, etc.)) , polypropylene (PP), polybutene, polybutadiene, polymethylpentene, styrene-ethylene-butylene-styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyterephthalic acid Ethylene Diester (PET), Polybutylene Terephthalate (PBT), Polyurethane, Polyurethane Acrylate, Polyimide (PI), Ionomer Resin, Ethylene-( Meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, ethylene-(meth)acrylic acid copolymer and ethylene copolymer other than ethylene-(meth)acrylate copolymer, polystyrene, polycarbonate Esters, fluororesins, hydrogenated products, modified products, cross-linked products or copolymers of any of these resins.
再者,於本說明書中,所謂「(甲基)丙烯酸」,係指包含「丙烯酸」及「甲基丙烯酸」兩者之概念。關於與(甲基)丙烯酸類似之用語亦同,例如所謂「(甲基)丙烯酸酯」,為包含「丙烯酸酯」及「甲基丙烯酸酯」兩者之概念,所謂「(甲基)丙烯醯基」,為包含「丙烯醯基」及「甲基丙烯醯基」兩者之概念。In addition, in this specification, "(meth)acrylic acid" means the concept containing both "acrylic acid" and "methacrylic acid". The same is true for terms similar to (meth)acrylic acid. For example, the so-called "(meth)acrylate" is a concept including both "acrylate" and "methacrylate", and the so-called "(meth)acrylate" "Base" is a concept including both "acryloyl" and "methacryloyl".
構成基材之樹脂可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些樹脂之組合及比率可任意選擇。The resin constituting the base material may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these resins can be arbitrarily selected.
就加熱時變化率、冷卻時變化率及綜合變化率之調節更容易之方面而言,基材之構成材料較佳為聚乙烯,更佳為低密度聚乙烯(LDPE)。The constituent material of the base material is preferably polyethylene, more preferably low-density polyethylene (LDPE), in terms of easier adjustment of the rate of change during heating, the rate of change during cooling, and the overall rate of change.
基材可僅由一層(單層)構成,亦可由兩層以上之多層構成。於基材由多層構成之情形時,這些多層可彼此相同亦可不同,這些多層之組合只要不損及本發明功效,則並無特別限定。 再者,於本說明書中,不限於基材之情形,所謂「多層可彼此相同亦可不同」,意指「可使所有的層相同,亦可使所有的層不同,亦可僅使一部分層不同」,進而所謂「多層互不相同」,意指「各層的構成材料及厚度之至少一者互不相同」。The base material may be composed of only one layer (single layer), or may be composed of two or more layers. When the base material is composed of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited as long as the effect of the present invention is not impaired. Furthermore, in this specification, not limited to the case of the base material, the phrase "multilayers may be the same or different from each other" means "all layers may be the same, all layers may be different, or only some of the layers may be "different from each other", and further "multiple layers are different from each other" means that "at least one of the constituent material and thickness of each layer is different from each other".
基材之厚度可根據目的而適當選擇,較佳為50μm至300μm,更佳為60μm至150μm。藉由基材之厚度為前述下限值以上,而基材之結構變得更穩定。藉由基材之厚度為前述上限值以下,而於刀片切割時、或前述半導體裝置製造用片之擴展時,變得容易將基材擴展,亦變得容易藉由擴展而切斷膜狀接著劑。 此處,所謂「基材之厚度」,意指基材整體之厚度,例如所謂由多層構成之基材之厚度,意指構成基材之所有層之合計厚度。The thickness of the base material can be appropriately selected according to the purpose, and is preferably 50 μm to 300 μm, more preferably 60 μm to 150 μm. By making the thickness of the base material more than the aforementioned lower limit value, the structure of the base material becomes more stable. When the thickness of the base material is below the above-mentioned upper limit value, it becomes easy to spread the base material at the time of blade dicing or the expansion of the sheet for semiconductor device manufacturing, and it becomes easy to cut the film-like shape by spreading. Then agent. Here, the "thickness of the base material" means the thickness of the whole base material, for example, the thickness of the base material composed of multiple layers means the total thickness of all the layers constituting the base material.
基材亦可為了提高與設置於該基材上之第一黏著劑層等其他層之密接性,而對表面實施下述處理等:藉由噴砂處理、溶劑處理、壓花加工處理等而進行之凹凸化處理;電暈放電處理、電子束照射處理、電漿處理、臭氧-紫外線照射處理、火焰處理、鉻酸處理、熱風處理等氧化處理。 另外,基材之表面亦可進行底漆處理。 另外,基材亦可具有下述層等:抗靜電塗層;於將半導體裝置製造用片加以重合進行保存時,防止基材接著於其他片材或防止基材接著於吸附台之層。In order to improve the adhesiveness with other layers such as the first adhesive layer provided on the base material, the following treatments may be performed on the surface of the base material: sandblasting, solvent treatment, embossing treatment, etc. Concave and convex treatment; corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone-ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment and other oxidation treatments. In addition, the surface of the substrate can also be primed. In addition, the base material may also have the following layers: an antistatic coating layer, and a layer that prevents the base material from adhering to other sheets or prevents the base material from adhering to an adsorption table when the sheets for semiconductor device manufacturing are stacked and stored.
基材除了前述樹脂等主要之構成材料以外,亦可含有填充材、著色劑、抗靜電劑、抗氧化劑、有機潤滑劑、觸媒、軟化劑(塑化劑)等公知之各種添加劑。The base material may contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), and the like in addition to the main constituent materials such as the aforementioned resins.
基材之光學特性於不損及本發明功效之範圍內,並無特別限定。基材例如亦可使雷射光或能量線穿透。The optical properties of the substrate are not particularly limited within the scope of not impairing the efficacy of the present invention. The substrate can also transmit laser light or energy rays, for example.
基材可利用公知之方法製造。例如,含有樹脂(以樹脂作為構成材料)之基材可藉由將前述樹脂或含有前述樹脂之樹脂組成物加以成形而製造。The base material can be produced by a known method. For example, a base material containing a resin (using a resin as a constituent material) can be produced by molding the aforementioned resin or a resin composition containing the aforementioned resin.
○第一黏著劑層 前述第一黏著劑層為片狀或膜狀,含有黏著劑。 第一黏著劑層可使用含有前述黏著劑之黏著劑組成物而形成。例如,於第一黏著劑層的形成對象面塗敷黏著劑組成物,視需要加以乾燥,藉此可於目標部位形成第一黏著劑層。○First adhesive layer The aforementioned first adhesive layer is in the form of a sheet or a film, and contains an adhesive. The first adhesive layer can be formed using an adhesive composition containing the aforementioned adhesive. For example, the first adhesive layer can be formed on the target site by coating the adhesive composition on the surface to be formed with the first adhesive layer, and drying if necessary.
黏著劑組成物之塗敷只要利用公知方法進行即可,例如可列舉:使用氣刀塗佈機、刀片塗佈機、棒塗機、凹版塗佈機、輥塗機、輥刀塗佈機、簾幕式塗佈機、模塗機、刮刀塗佈機、網版塗佈機、邁耶(Meyer)棒塗機、輕觸式塗佈機等各種塗佈機之方法。The coating of the adhesive composition may be carried out by a known method, for example, the use of an air knife coater, a blade coater, a bar coater, a gravure coater, a roll coater, a roll knife coater, Curtain coater, die coater, blade coater, screen coater, Meyer bar coater, light touch coater and other coating methods.
黏著劑組成物之乾燥條件並無特別限定,於黏著劑組成物含有後述之溶媒之情形時,較佳為加熱乾燥,於該情形時,例如較佳為於70℃至130℃以10秒鐘至5分鐘之條件乾燥。The drying conditions of the adhesive composition are not particularly limited. When the adhesive composition contains the solvent described later, it is preferably heated and dried. In this case, for example, it is preferably 70°C to 130°C for 10 seconds. Dry to 5 minutes.
作為前述黏著劑,例如可列舉:丙烯酸樹脂、胺基甲酸酯樹脂、橡膠系樹脂、聚矽氧樹脂、環氧系樹脂、聚乙烯醚、聚碳酸酯、酯系樹脂等黏著性樹脂,較佳為丙烯酸樹脂。Examples of the aforementioned adhesive include adhesive resins such as acrylic resins, urethane resins, rubber-based resins, polysiloxane resins, epoxy-based resins, polyvinyl ethers, polycarbonates, and ester-based resins. Preferred are acrylic resins.
再者,於本說明書中,「黏著性樹脂」中包含具有黏著性之樹脂、與具有接著性之樹脂兩者。例如,前述黏著性樹脂中,不僅包含樹脂自身具有黏著性者,而且亦包含藉由與添加劑等其他成分併用而顯示黏著性之樹脂、或者藉由熱或水等觸發之存在而顯示接著性之樹脂等。In addition, in this specification, "adhesive resin" contains both the resin which has adhesiveness, and the resin which has adhesiveness. For example, the aforementioned adhesive resins include not only resins having adhesiveness themselves, but also resins that exhibit adhesiveness by being used in combination with other components such as additives, or resins that exhibit adhesiveness due to the presence of heat or water. resin, etc.
第一黏著劑層可為硬化性及非硬化性之任一種,例如亦可為能量線硬化性及非能量線硬化性之任一種。硬化性之第一黏著劑層係能夠容易地調節該第一黏著劑層在硬化前及硬化後之物性。The first adhesive layer may be either curable or non-curable, for example, energy ray curable and non-energy ray curable. The hardening first adhesive layer can easily adjust the physical properties of the first adhesive layer before and after hardening.
於本說明書中,所謂「能量線」,意指電磁波或帶電粒子束中具有能量量子者。作為能量線之例,可列舉紫外線、放射線、電子束等。紫外線例如可藉由使用高壓水銀燈、融合燈、氙燈、黑光或LED(Light Emitting Diode;發光二極體)燈等作為紫外線源而照射。電子束可照射藉由電子束加速器等而產生者。 另外,於本說明書中,所謂「能量線硬化性」,意指藉由照射能量線而硬化之性質,所謂「非能量線硬化性」,意指即便照射能量線仍不硬化之性質。In this specification, the term "energy line" refers to an electromagnetic wave or a charged particle beam having energy quanta. Examples of energy rays include ultraviolet rays, radiation, electron beams, and the like. The ultraviolet rays can be irradiated by using, for example, a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light, or an LED (Light Emitting Diode; light emitting diode) lamp or the like as an ultraviolet source. The electron beam may be irradiated by an electron beam accelerator or the like. In addition, in this specification, "energy-beam curability" means the property of hardening by irradiation with energy rays, and "non-energy-beam hardenability" means the property of not hardening even when irradiated with energy rays.
第一黏著劑層可僅由一層(單層)構成,亦可由兩層以上之多層構成,於由多層構成之情形時,這些多層可彼此相同亦可不同,這些多層之組合並無特別限定。The first adhesive layer may be composed of only one layer (single layer), or may be composed of two or more layers. When composed of multiple layers, these layers may be the same or different from each other, and the combination of these layers is not particularly limited.
第一黏著劑層之厚度較佳為1μm至100μm,更佳為1μm至60μm,尤佳為1μm至30μm。 此處,所謂「第一黏著劑層之厚度」,意指第一黏著劑層整體之厚度,例如所謂由多層構成之第一黏著劑層之厚度,意指構成第一黏著劑層之所有層之合計厚度。The thickness of the first adhesive layer is preferably 1 μm to 100 μm, more preferably 1 μm to 60 μm, and particularly preferably 1 μm to 30 μm. Here, the so-called "thickness of the first adhesive layer" refers to the thickness of the entire first adhesive layer, for example, the thickness of the first adhesive layer composed of multiple layers refers to all the layers constituting the first adhesive layer total thickness.
黏著劑層之光學特性於不損及本發明功效之範圍內並無特別限定。例如,第一黏著劑層亦可使能量線穿透。 繼而,針對前述黏著劑組成物加以說明。以下之黏著劑組成物之說明中,有時將第一黏著劑層簡稱為「黏著劑層」。 下述黏著劑組成物例如能以含量(質量%)之合計不超過100質量%之方式含有下述的一種以上之成分。The optical properties of the adhesive layer are not particularly limited within the scope of not impairing the efficacy of the present invention. For example, the first adhesive layer can also penetrate the energy rays. Next, the aforementioned adhesive composition will be described. In the following description of the adhesive composition, the first adhesive layer may be abbreviated as "adhesive layer" in some cases. The following adhesive composition can contain, for example, one or more of the following components so that the total content (mass %) does not exceed 100 mass %.
[黏著劑組成物] 於黏著劑層為能量線硬化性之情形時,作為含有能量線硬化性黏著劑之黏著劑組成物、亦即能量線硬化性之黏著劑組成物,例如可列舉下述黏著劑組成物等:黏著劑組成物(I-1),含有非能量線硬化性之黏著性樹脂(I-1a)(以下有時簡稱為「黏著性樹脂(I-1a)」)、及能量線硬化性化合物;黏著劑組成物(I-2),含有於非能量線硬化性之黏著性樹脂(I-1a)的側鏈導入有不飽和基的能量線硬化性之黏著性樹脂(I-2a)(以下有時簡稱為「黏著性樹脂(I-2a)」);以及黏著劑組成物(I-3),含有前述黏著性樹脂(I-2a)及能量線硬化性化合物。[Adhesive composition] When the adhesive layer is energy ray curable, as the adhesive composition containing the energy ray curable adhesive, that is, the energy ray curable adhesive composition, for example, the following adhesive compositions can be cited: Adhesive composition (I-1), containing non-energy ray curable adhesive resin (I-1a) (hereinafter sometimes referred to as "adhesive resin (I-1a)"), and energy ray curable compound; Adhesive composition (I-2), energy ray-curable adhesive resin (I-2a) containing unsaturated groups introduced into the side chain of non-energy ray-curable adhesive resin (I-1a) (hereinafter Sometimes abbreviated as "adhesive resin (I-2a)"); and an adhesive composition (I-3) containing the aforementioned adhesive resin (I-2a) and an energy ray curable compound.
[黏著劑組成物(I-1)] 前述黏著劑組成物(I-1)如上文所述,含有非能量線硬化性之黏著性樹脂(I-1a)及能量線硬化性化合物。[Adhesive composition (I-1)] As mentioned above, the said adhesive composition (I-1) contains the non-energy-ray-curable adhesive resin (I-1a) and an energy-ray-curable compound.
[黏著性樹脂(I-1a)] 前述黏著性樹脂(I-1a)較佳為丙烯酸樹脂。 作為前述丙烯酸樹脂,例如可列舉:至少具有源自(甲基)丙烯酸烷基酯之構成單元的丙烯酸聚合物。 前述丙烯酸樹脂所具有之構成單元可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些構成單元之組合及比率可任意選擇。[Adhesive resin (I-1a)] The aforementioned adhesive resin (I-1a) is preferably an acrylic resin. As said acrylic resin, the acrylic polymer which has a structural unit derived from (meth)acrylic acid alkyl ester at least is mentioned, for example. The structural unit which the said acrylic resin has may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these structural units can be selected arbitrarily.
黏著劑組成物(I-1)所含有之黏著性樹脂(I-1a)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些黏著性樹脂(I-1a)之組合及比率可任意選擇。The adhesive resin (I-1a) contained in the adhesive composition (I-1) may be only one type or two or more types, and in the case of two or more types, these adhesive resins (I-1a) The combination and ratio can be selected arbitrarily.
於黏著劑組成物(I-1)中,黏著性樹脂(I-1a)之含量相對於黏著劑組成物(I-1)之總質量的比率較佳為5質量%至99質量%,更佳為10質量%至95質量%,尤佳為15質量%至90質量%。In the adhesive composition (I-1), the ratio of the content of the adhesive resin (I-1a) to the total mass of the adhesive composition (I-1) is preferably 5% by mass to 99% by mass, more 10 to 95 mass % is preferable, and 15 to 90 mass % is particularly preferable.
[能量線硬化性化合物] 作為黏著劑組成物(I-1)所含有之前述能量線硬化性化合物,可列舉具有能量線聚合性不飽和基且能夠藉由能量線之照射而硬化的單體或寡聚物。 能量線硬化性化合物中,作為單體,例如可列舉:三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇(甲基)丙烯酸酯等多元(甲基)丙烯酸酯;(甲基)丙烯酸胺基甲酸酯;聚酯(甲基)丙烯酸酯;聚醚(甲基)丙烯酸酯;環氧(甲基)丙烯酸酯等。 能量線硬化性化合物中,作為寡聚物,例如可列舉前述所例示之單體所聚合而成之寡聚物等。 能量線硬化性化合物就分子量相對較大而不易使黏著劑層之儲存彈性模數降低之方面而言,較佳為(甲基)丙烯酸胺基甲酸酯、(甲基)丙烯酸胺基甲酸酯寡聚物。[Energy ray hardening compound] Examples of the energy-ray-curable compound contained in the adhesive composition (I-1) include monomers and oligomers that have energy-ray-polymerizable unsaturated groups and can be cured by energy-ray irradiation. Among the energy ray curable compounds, examples of monomers include trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate (meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol (meth)acrylate and other polyvalent (meth)acrylates; (meth)acrylate aminomethyl Polyester (meth)acrylate; Polyether (meth)acrylate; Epoxy (meth)acrylate, etc. Among the energy ray curable compounds, examples of the oligomers include oligomers obtained by polymerizing the monomers exemplified above. The energy ray curable compound is preferably a (meth)acrylate urethane, a (meth)acrylate urethane in terms of a relatively large molecular weight that does not easily reduce the storage elastic modulus of the adhesive layer ester oligomers.
黏著劑組成物(I-1)所含有之前述能量線硬化性化合物可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些能量線硬化性化合物之組合及比率可任意選擇。The aforementioned energy ray curable compound contained in the adhesive composition (I-1) may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these energy ray curable compounds may be Free to choose.
於黏著劑組成物(I-1)中,前述能量線硬化性化合物之含量相對於黏著劑組成物(I-1)之總質量的比率較佳為1質量%至95質量%,更佳為5質量%至90質量%,尤佳為10質量%至85質量%。In the adhesive composition (I-1), the ratio of the content of the aforementioned energy ray curable compound to the total mass of the adhesive composition (I-1) is preferably 1% by mass to 95% by mass, more preferably 5% by mass to 90% by mass, particularly preferably 10% by mass to 85% by mass.
[交聯劑] 於使用除了源自(甲基)丙烯酸烷基酯之構成單元以外還進而具有源自含官能基之單體之構成單元的前述丙烯酸聚合物來作為黏著性樹脂(I-1a)之情形時,黏著劑組成物(I-1)較佳為進而含有交聯劑。[Crosslinking agent] When the aforementioned acrylic polymer having a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an alkyl (meth)acrylate is used as the adhesive resin (I-1a), The adhesive composition (I-1) preferably further contains a crosslinking agent.
前述交聯劑例如與前述官能基反應而將黏著性樹脂(I-1a)彼此加以交聯。 作為交聯劑,例如可列舉:甲苯二異氰酸酯、六亞甲基二異氰酸酯、苯二甲基二異氰酸酯、這些二異氰酸酯之加合物等異氰酸酯系交聯劑(具有異氰酸酯基之交聯劑);乙二醇縮水甘油醚等環氧系交聯劑(具有縮水甘油基之交聯劑);六[1-(2-甲基)-氮丙啶基]三磷雜三嗪等氮丙啶系交聯劑(具有氮丙啶基之交聯劑);鋁螯合物等金屬螯合物系交聯劑(具有金屬螯合物結構之交聯劑);異氰尿酸酯系交聯劑(具有異氰尿酸骨架之交聯劑)等。 就提高黏著劑之凝聚力而提高黏著劑層之黏著力之方面、及獲取容易等方面而言,交聯劑較佳為異氰酸酯系交聯劑。For example, the above-mentioned crosslinking agent reacts with the above-mentioned functional group to crosslink the adhesive resins (I-1a) to each other. Examples of the crosslinking agent include isocyanate-based crosslinking agents (crosslinking agents having an isocyanate group) such as tolylene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts of these diisocyanates; Epoxy-based cross-linking agents such as ethylene glycol glycidyl ether (cross-linking agents with a glycidyl group); Cross-linking agent (cross-linking agent with aziridine group); metal chelate-based cross-linking agent such as aluminum chelate (cross-linking agent with metal chelate structure); isocyanurate-based cross-linking agent (crosslinking agent with isocyanuric acid skeleton) etc. The cross-linking agent is preferably an isocyanate-based cross-linking agent in terms of improving the cohesion of the adhesive and improving the adhesive force of the adhesive layer, as well as being easy to obtain.
黏著劑組成物(I-1)所含有之交聯劑可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些交聯劑之組合及比率可任意選擇。The cross-linking agent contained in the adhesive composition (I-1) may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these cross-linking agents can be arbitrarily selected.
於使用交聯劑之情形時,於前述黏著劑組成物(I-1)中,相對於黏著性樹脂(I-1a)之含量100質量份,交聯劑之含量較佳為0.01質量份至50質量份,更佳為0.1質量份至20質量份,尤佳為0.3質量份至15質量份。In the case of using a cross-linking agent, in the aforementioned adhesive composition (I-1), the content of the cross-linking agent is preferably 0.01 parts by mass to 100 parts by mass of the content of the adhesive resin (I-1a). 50 parts by mass, more preferably 0.1 to 20 parts by mass, particularly preferably 0.3 to 15 parts by mass.
[光聚合起始劑] 黏著劑組成物(I-1)亦可進而含有光聚合起始劑。含有光聚合起始劑之黏著劑組成物(I-1)即便照射紫外線等能量相對較低之能量線,仍充分進行硬化反應。[Photopolymerization initiator] The adhesive composition (I-1) may further contain a photopolymerization initiator. Even if the adhesive composition (I-1) containing the photopolymerization initiator is irradiated with energy rays with relatively low energy such as ultraviolet rays, the curing reaction is sufficiently carried out.
作為前述光聚合起始劑,例如可列舉:安息香、安息香甲醚、安息香乙醚、安息香異丙醚、安息香異丁醚、安息香苯甲酸、安息香苯甲酸甲酯、安息香二甲基醚等安息香化合物;苯乙酮、2-羥基-2-甲基-1-苯基-丙烷-1-酮、2,2-二甲氧基-1,2-二苯基乙烷-1-酮等苯乙酮化合物;雙(2,4,6-三甲基苯甲醯基)苯基氧化膦、2,4,6-三甲基苯甲醯基二苯基氧化膦等醯基氧化膦化合物;苄基苯基硫醚、一硫化四甲基秋蘭姆等硫醚化合物;1-羥基環己基苯基酮等α-酮醇化合物;偶氮雙異丁腈等偶氮化合物;二茂鈦等二茂鈦化合物;噻噸酮等噻噸酮化合物;過氧化物化合物;二乙醯等二酮化合物;苯偶醯;二苯偶醯;二苯甲酮;2,4-二乙基噻噸酮;1,2-二苯基甲烷;2-羥基-2-甲基-1-[4-(1-甲基乙烯基)苯基]丙酮;2-氯蒽醌等。 另外,作為前述光聚合起始劑,例如亦可使用:1-氯蒽醌等醌化合物;胺等光增感劑等。Examples of the photopolymerization initiator include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ether; Acetophenones such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, 2,2-dimethoxy-1,2-diphenylethane-1-one, etc. Compounds; benzyl phosphine oxide compounds such as bis(2,4,6-trimethylbenzyl)phenylphosphine oxide, 2,4,6-trimethylbenzyldiphenylphosphine oxide; benzyl Sulfide compounds such as phenyl sulfide and tetramethylthiuram monosulfide; α-keto alcohol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; diocene such as titanocene Titanium compounds; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]acetone; 2-chloroanthraquinone, etc. Moreover, as said photoinitiator, quinone compounds, such as 1-chloroanthraquinone, etc.; photosensitizers, such as an amine, etc. can also be used, for example.
黏著劑組成物(I-1)所含有之光聚合起始劑可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些光聚合起始劑之組合及比率可任意選擇。The photopolymerization initiator contained in the adhesive composition (I-1) may be only one kind or two or more kinds. In the case of two or more kinds, the combination and ratio of these photopolymerization initiators can be arbitrary. choose.
於使用光聚合起始劑之情形時,於黏著劑組成物(I-1)中,相對於前述能量線硬化性化合物之含量100質量份,光聚合起始劑之含量較佳為0.01質量份至20質量份,更佳為0.03質量份至10質量份,尤佳為0.05質量份至5質量份。In the case of using a photopolymerization initiator, in the adhesive composition (I-1), the content of the photopolymerization initiator is preferably 0.01 part by mass relative to 100 parts by mass of the aforementioned energy ray curable compound to 20 parts by mass, more preferably 0.03 to 10 parts by mass, particularly preferably 0.05 to 5 parts by mass.
[其他添加劑] 黏著劑組成物(I-1)亦可於不損及本發明功效之範圍內,含有都不相當於上述任一成分之其他添加劑。 作為前述其他添加劑,例如可列舉:抗靜電劑、抗氧化劑、軟化劑(塑化劑)、填充材(填料)、防銹劑、著色劑(顏料、染料)、增感劑、增黏劑、反應延遲劑、交聯促進劑(觸媒)等公知之添加劑。[Other additives] The adhesive composition (I-1) may also contain other additives that are not equivalent to any of the above-mentioned components within the scope of not impairing the efficacy of the present invention. Examples of the other additives include antistatic agents, antioxidants, softeners (plasticizers), fillers (fillers), rust inhibitors, colorants (pigments, dyes), sensitizers, tackifiers, Well-known additives such as reaction retarders and crosslinking accelerators (catalysts).
再者,所謂反應延遲劑,例如為用以抑制因混入至黏著劑組成物(I-1)中之觸媒之作用,而於保存中之黏著劑組成物(I-1)中進行非目標之交聯反應的成分。作為反應延遲劑,例如可列舉藉由針對觸媒之螯合物而形成螯合錯合物者,更具體可列舉一分子中具有2個以上之羰基(-C(=O)-)者。In addition, the so-called reaction retarder is used to suppress, for example, the action of a catalyst mixed into the adhesive composition (I-1), and the non-targeted reaction in the adhesive composition (I-1) during storage is suppressed. components of the cross-linking reaction. As a reaction retarder, the thing which forms a chelate complex by the chelate compound with respect to a catalyst is mentioned, for example, More specifically, the thing which has 2 or more carbonyl groups (-C(=O)-) in one molecule is mentioned.
黏著劑組成物(I-1)所含有之其他添加劑可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些其他添加劑之組合及比率可任意選擇。The other additives contained in the adhesive composition (I-1) may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these other additives can be arbitrarily selected.
黏著劑組成物(I-1)之其他添加劑之含量並無特別限定,只要根據該其他添加劑的種類而適當選擇即可。The content of other additives in the adhesive composition (I-1) is not particularly limited, and may be appropriately selected according to the type of the other additives.
[溶媒] 黏著劑組成物(I-1)亦可含有溶媒。黏著劑組成物(I-1)藉由含有溶媒,而對塗敷對象面之塗敷適性提高。[solvent] The adhesive composition (I-1) may contain a solvent. In the adhesive composition (I-1), the coating suitability to the coating target surface is improved by containing the solvent.
前述溶媒較佳為有機溶媒。The aforementioned solvent is preferably an organic solvent.
[黏著劑組成物(I-2)] 如上文所述,前述黏著劑組成物(I-2)含有於非能量線硬化性之黏著性樹脂(I-1a)的側鏈導入有不飽和基的能量線硬化性之黏著性樹脂(I-2a)。[Adhesive composition (I-2)] As described above, the aforementioned adhesive composition (I-2) contains the energy ray-curable adhesive resin (I-1a) having an unsaturated group introduced into the side chain of the non-energy ray-curable adhesive resin (I-1a). -2a).
[黏著性樹脂(I-2a)] 前述黏著性樹脂(I-2a)例如係藉由使具有能量線聚合性不飽和基的含不飽和基之化合物與黏著性樹脂(I-1a)中的官能基反應而獲得。[Adhesive resin (I-2a)] The aforementioned adhesive resin (I-2a) is obtained, for example, by reacting an unsaturated group-containing compound having an energy ray polymerizable unsaturated group with a functional group in the adhesive resin (I-1a).
前述含不飽和基之化合物為除了前述能量線聚合性不飽和基以外,進而具有藉由與黏著性樹脂(I-1a)中的官能基反應而能夠與黏著性樹脂(I-1a)鍵結之基的化合物。 作為前述能量線聚合性不飽和基,例如可列舉:(甲基)丙烯醯基、乙烯基(次乙基;ethenyl)、烯丙基(2-丙烯基)等,較佳為(甲基)丙烯醯基。 作為能夠與黏著性樹脂(I-1a)中的官能基鍵結之基,例如可列舉:能夠與羥基或胺基鍵結之異氰酸酯基及縮水甘油基、以及能夠與羧基或環氧基鍵結之羥基及胺基等。The aforementioned unsaturated group-containing compound has, in addition to the aforementioned energy ray polymerizable unsaturated group, the ability to bond with the adhesive resin (I-1a) by reacting with the functional group in the adhesive resin (I-1a). based compounds. Examples of the energy ray polymerizable unsaturated group include (meth)acryloyl, vinyl (ethenyl), allyl (2-propenyl), and the like, preferably (methyl) Acryloyl. Examples of groups that can be bonded to functional groups in the adhesive resin (I-1a) include isocyanate groups and glycidyl groups that can be bonded to hydroxyl groups or amino groups, and carboxyl groups or epoxy groups that can be bonded. The hydroxyl and amine groups, etc.
作為前述含不飽和基之化合物,例如可列舉:(甲基)丙烯醯氧基乙基異氰酸酯、(甲基)丙烯醯基異氰酸酯、(甲基)丙烯酸縮水甘油酯等。As said unsaturated group containing compound, (meth)acryloyl oxyethyl isocyanate, (meth)acryloyl isocyanate, glycidyl (meth)acrylate, etc. are mentioned, for example.
黏著劑組成物(I-2)所含有之黏著性樹脂(I-2a)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些黏著性樹脂(I-2a)之組合及比率可任意選擇。The adhesive resin (I-2a) contained in the adhesive composition (I-2) may be only one type, or two or more types. In the case of two or more types, these adhesive resins (I-2a) The combination and ratio can be selected arbitrarily.
於黏著劑組成物(I-2)中,黏著性樹脂(I-2a)之含量相對於黏著劑組成物(I-2)之總質量的比率較佳為5質量%至99質量%,更佳為10質量%至95質量%,尤佳為10質量%至90質量%。In the adhesive composition (I-2), the ratio of the content of the adhesive resin (I-2a) to the total mass of the adhesive composition (I-2) is preferably 5% by mass to 99% by mass, more 10 to 95 mass % is preferable, and 10 to 90 mass % is particularly preferable.
[交聯劑] 例如於使用與黏著性樹脂(I-1a)中同樣具有源自含官能基之單體之構成單元的前述丙烯酸聚合物來作為黏著性樹脂(I-2a)之情形時,黏著劑組成物(I-2)亦可進而含有交聯劑。[Crosslinking agent] For example, when the aforementioned acrylic polymer having a structural unit derived from a functional group-containing monomer is used as the adhesive resin (I-2a) as in the adhesive resin (I-1a), the adhesive composition ( I-2) may further contain a crosslinking agent.
作為黏著劑組成物(I-2)中之前述交聯劑,可列舉與黏著劑組成物(I-1)中之交聯劑相同者。 黏著劑組成物(I-2)所含有之交聯劑可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些交聯劑之組合及比率可任意選擇。As the above-mentioned crosslinking agent in the adhesive composition (I-2), the same ones as those in the adhesive composition (I-1) can be mentioned. The cross-linking agent contained in the adhesive composition (I-2) may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these cross-linking agents can be arbitrarily selected.
於使用交聯劑之情形時,於前述黏著劑組成物(I-2)中,相對於黏著性樹脂(I-2a)之含量100質量份,交聯劑之含量較佳為0.01質量份至50質量份,更佳為0.1質量份至20質量份,尤佳為0.3質量份至15質量份。In the case of using a cross-linking agent, in the aforementioned adhesive composition (I-2), the content of the cross-linking agent is preferably 0.01 parts by mass to 100 parts by mass of the content of the adhesive resin (I-2a). 50 parts by mass, more preferably 0.1 to 20 parts by mass, particularly preferably 0.3 to 15 parts by mass.
[光聚合起始劑] 黏著劑組成物(I-2)亦可進而含有光聚合起始劑。含有光聚合起始劑之黏著劑組成物(I-2)即便照射紫外線等能量相對較低之能量線,仍充分進行硬化反應。[Photopolymerization initiator] The adhesive composition (I-2) may further contain a photopolymerization initiator. Even if the adhesive composition (I-2) containing the photopolymerization initiator is irradiated with relatively low-energy energy rays such as ultraviolet rays, the curing reaction is sufficiently carried out.
作為黏著劑組成物(I-2)中之前述光聚合起始劑,可列舉與黏著劑組成物(I-1)中之光聚合起始劑相同者。 黏著劑組成物(I-2)所含有之光聚合起始劑可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些光聚合起始劑之組合及比率可任意選擇。As the photopolymerization initiator in the adhesive composition (I-2), the same ones as the photopolymerization initiator in the adhesive composition (I-1) can be mentioned. The photopolymerization initiator contained in the adhesive composition (I-2) may be only one kind or two or more kinds. In the case of two or more kinds, the combination and ratio of these photopolymerization initiators can be arbitrary. choose.
於使用光聚合起始劑之情形時,於黏著劑組成物(I-2)中,相對於黏著性樹脂(I-2a)之含量100質量份,光聚合起始劑之含量較佳為0.01質量份至20質量份,更佳為0.03質量份至10質量份,尤佳為0.05質量份至5質量份。When a photopolymerization initiator is used, in the adhesive composition (I-2), the content of the photopolymerization initiator is preferably 0.01 relative to 100 parts by mass of the adhesive resin (I-2a) Parts by mass to 20 parts by mass, more preferably 0.03 parts by mass to 10 parts by mass, particularly preferably 0.05 parts by mass to 5 parts by mass.
[其他添加劑、溶媒] 黏著劑組成物(I-2)亦可於不損及本發明功效之範圍內,含有都不相當於上述任一成分之其他添加劑。 另外,黏著劑組成物(I-2)亦可以與黏著劑組成物(I-1)之情形相同之目的含有溶媒。 作為黏著劑組成物(I-2)中之前述其他添加劑及溶媒,分別可列舉與黏著劑組成物(I-1)中之其他添加劑及溶媒相同者。黏著劑組成物(I-2)所含有之其他添加劑及溶媒分別可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些其他添加劑及溶媒之組合及比率可任意選擇。 黏著劑組成物(I-2)之其他添加劑及溶媒之含量分別並無特別限定,只要根據該其他添加劑及溶媒的種類而適當選擇即可。[Other additives and solvents] The adhesive composition (I-2) may also contain other additives that are not equivalent to any of the above-mentioned components within the scope of not impairing the efficacy of the present invention. In addition, the adhesive composition (I-2) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1). As the other additives and the solvent in the adhesive composition (I-2), the same ones as those in the adhesive composition (I-1) can be mentioned, respectively. The other additives and solvents contained in the adhesive composition (I-2) may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these other additives and vehicles can be selected arbitrarily. . The content of the other additives and the solvent in the adhesive composition (I-2) is not particularly limited, and may be appropriately selected according to the types of the other additives and the solvent.
[黏著劑組成物(I-3)] 如上文所述,前述黏著劑組成物(I-3)含有前述黏著性樹脂(I-2a)及能量線硬化性化合物。[Adhesive composition (I-3)] As mentioned above, the said adhesive composition (I-3) contains the said adhesive resin (I-2a) and an energy ray curable compound.
於黏著劑組成物(I-3)中,黏著性樹脂(I-2a)之含量相對於黏著劑組成物(I-3)之總質量的比率較佳為5質量%至99質量%,更佳為10質量%至95質量%,尤佳為15質量%至90質量%。In the adhesive composition (I-3), the ratio of the content of the adhesive resin (I-2a) to the total mass of the adhesive composition (I-3) is preferably 5% by mass to 99% by mass, more 10 to 95 mass % is preferable, and 15 to 90 mass % is particularly preferable.
[能量線硬化性化合物] 作為黏著劑組成物(I-3)所含有之前述能量線硬化性化合物,可列舉具有能量線聚合性不飽和基且能夠藉由能量線之照射而硬化之單體及寡聚物,可列舉與黏著劑組成物(I-1)所含有之能量線硬化性化合物相同者。 黏著劑組成物(I-3)所含有之前述能量線硬化性化合物可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些能量線硬化性化合物之組合及比率可任意選擇。[Energy ray hardening compound] Examples of the energy ray curable compound contained in the adhesive composition (I-3) include monomers and oligomers which have an energy ray polymerizable unsaturated group and can be cured by irradiation with energy rays, and examples include The same as the energy ray curable compound contained in the adhesive composition (I-1). The aforementioned energy ray curable compound contained in the adhesive composition (I-3) may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these energy ray curable compounds may be Free to choose.
於前述黏著劑組成物(I-3)中,相對於黏著性樹脂(I-2a)之含量100質量份,前述能量線硬化性化合物之含量較佳為0.01質量份至300質量份,更佳為0.03質量份至200質量份,尤佳為0.05質量份至100質量份。In the aforementioned adhesive composition (I-3), the content of the aforementioned energy ray curable compound is preferably 0.01 to 300 parts by mass relative to 100 parts by mass of the content of the adhesive resin (I-2a), more preferably It is 0.03 to 200 parts by mass, particularly preferably 0.05 to 100 parts by mass.
[光聚合起始劑] 黏著劑組成物(I-3)亦可進而含有光聚合起始劑。含有光聚合起始劑之黏著劑組成物(I-3)即便照射紫外線等能量相對較低之能量線,仍充分進行硬化反應。[Photopolymerization initiator] The adhesive composition (I-3) may further contain a photopolymerization initiator. Even if the adhesive composition (I-3) containing the photopolymerization initiator is irradiated with relatively low-energy energy rays such as ultraviolet rays, the curing reaction is sufficiently carried out.
作為黏著劑組成物(I-3)中之前述光聚合起始劑,可列舉與黏著劑組成物(I-1)中之光聚合起始劑相同者。 黏著劑組成物(I-3)所含有之光聚合起始劑可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些光聚合起始劑之組合及比率可任意選擇。As the photopolymerization initiator in the adhesive composition (I-3), the same ones as the photopolymerization initiator in the adhesive composition (I-1) can be mentioned. The photopolymerization initiator contained in the adhesive composition (I-3) may be only one kind or two or more kinds. In the case of two or more kinds, the combination and ratio of these photopolymerization initiators can be arbitrary. choose.
於使用光聚合起始劑之情形時,於黏著劑組成物(I-3)中,相對於黏著性樹脂(I-2a)及前述能量線硬化性化合物之總含量100質量份,光聚合起始劑之含量較佳為0.01質量份至20質量份,更佳為0.03質量份至10質量份,尤佳為0.05質量份至5質量份。In the case of using a photopolymerization initiator, in the adhesive composition (I-3), with respect to 100 parts by mass of the total content of the adhesive resin (I-2a) and the aforementioned energy ray curable compound, the photopolymerization initiator The content of the starting agent is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, particularly preferably 0.05 to 5 parts by mass.
[其他添加劑、溶媒] 黏著劑組成物(I-3)亦可於不損及本發明功效之範圍內,含有都不相當於上述任一成分之其他添加劑。 另外,黏著劑組成物(I-3)亦可以與黏著劑組成物(I-1)之情形相同之目的含有溶媒。 作為黏著劑組成物(I-3)中之前述其他添加劑及溶媒,分別可列舉與黏著劑組成物(I-1)中之其他添加劑及溶媒相同者。黏著劑組成物(I-3)所含有之其他添加劑及溶媒分別可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些其他添加劑及溶媒之組合及比率可任意選擇。 黏著劑組成物(I-3)之其他添加劑及溶媒之含量分別並無特別限定,只要根據該其他添加劑及溶媒的種類而適當選擇即可。[Other additives and solvents] The adhesive composition (I-3) may also contain other additives that are not equivalent to any of the above-mentioned components within the scope of not impairing the efficacy of the present invention. In addition, the adhesive composition (I-3) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1). As the other additives and the solvent in the adhesive composition (I-3), the same ones as those in the adhesive composition (I-1) can be mentioned, respectively. The other additives and solvents contained in the adhesive composition (I-3) may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these other additives and vehicles can be selected arbitrarily. . The content of the other additives and the solvent of the adhesive composition (I-3) is not particularly limited, and may be appropriately selected according to the types of the other additives and the solvent.
[黏著劑組成物(I-1)至黏著劑組成物(I-3)以外之黏著劑組成物] 到此為止,主要對黏著劑組成物(I-1)、黏著劑組成物(I-2)及黏著劑組成物(I-3)進行了說明,但作為這些黏著劑組成物之含有成分而說明者亦能夠同樣地用於這些三種黏著劑組成物以外之所有黏著劑組成物(本說明書中,稱為「黏著劑組成物(I-1)至黏著劑組成物(I-3)以外之黏著劑組成物」)。[Adhesive composition (I-1) to adhesive compositions other than adhesive composition (I-3)] So far, the adhesive composition (I-1), the adhesive composition (I-2), and the adhesive composition (I-3) have been mainly described, but the components contained in these adhesive compositions are described below. The description can also be used for all adhesive compositions other than these three adhesive compositions (in this specification, referred to as "adhesive composition (I-1) to adhesive composition (I-3) other than the adhesive composition").
作為黏著劑組成物(I-1)至黏著劑組成物(I-3)以外之黏著劑組成物,除了能量線硬化性之黏著劑組成物以外,亦可列舉非能量線硬化性之黏著劑組成物。 作為非能量線硬化性之黏著劑組成物,例如可列舉含有丙烯酸樹脂、胺基甲酸酯樹脂、橡膠系樹脂、聚矽氧樹脂、環氧系樹脂、聚乙烯醚、聚碳酸酯、酯系樹脂等非能量線硬化性之黏著性樹脂(I-1a)的黏著劑組成物(I-4),較佳為含有丙烯酸樹脂。As the adhesive composition other than the adhesive composition (I-1) to the adhesive composition (I-3), in addition to the energy ray curable adhesive composition, a non-energy ray curable adhesive composition can also be mentioned composition. Examples of non-energy ray-curable adhesive compositions include acrylic resins, urethane resins, rubber-based resins, silicone resins, epoxy-based resins, polyvinyl ethers, polycarbonates, and ester-based resins. The adhesive composition (I-4) of the non-energy ray-curable adhesive resin (I-1a) such as resin preferably contains an acrylic resin.
黏著劑組成物(I-1)至黏著劑組成物(I-3)以外之黏著劑組成物較佳為含有一種或兩種以上之交聯劑,該交聯劑之含量可設為與上述黏著劑組成物(I-1)等之情形相同。The adhesive compositions other than the adhesive composition (I-1) to the adhesive composition (I-3) preferably contain one or two or more cross-linking agents, and the content of the cross-linking agents can be set to the same as the above. The same applies to the adhesive composition (I-1) and the like.
[黏著劑組成物(I-4)] 作為黏著劑組成物(I-4)中較佳者,例如可列舉含有前述黏著性樹脂(I-1a)及交聯劑之黏著劑組成物。[Adhesive composition (I-4)] As a preferable thing in an adhesive composition (I-4), the adhesive composition containing the said adhesive resin (I-1a) and a crosslinking agent is mentioned, for example.
[黏著性樹脂(I-1a)] 作為黏著劑組成物(I-4)中之黏著性樹脂(I-1a),可列舉與黏著劑組成物(I-1)中之黏著性樹脂(I-1a)相同者。 黏著劑組成物(I-4)所含有之黏著性樹脂(I-1a)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些黏著性樹脂(I-1a)之組合及比率可任意選擇。[Adhesive resin (I-1a)] As the adhesive resin (I-1a) in the adhesive composition (I-4), the same ones as the adhesive resin (I-1a) in the adhesive composition (I-1) can be mentioned. The adhesive resin (I-1a) contained in the adhesive composition (I-4) may be only one type or two or more types. In the case of two or more types, these adhesive resins (I-1a) The combination and ratio can be selected arbitrarily.
於黏著劑組成物(I-4)中,黏著性樹脂(I-1a)之含量相對於黏著劑組成物(I-4)之總質量的比率較佳為5質量%至99質量%,更佳為10質量%至95質量%,尤佳為15質量%至90質量%。In the adhesive composition (I-4), the ratio of the content of the adhesive resin (I-1a) to the total mass of the adhesive composition (I-4) is preferably 5% by mass to 99% by mass, more 10 to 95 mass % is preferable, and 15 to 90 mass % is particularly preferable.
[交聯劑] 於使用除了源自(甲基)丙烯酸烷基酯之構成單元以外進而具有源自含官能基之單體之構成單元的前述丙烯酸聚合物作為黏著性樹脂(I-1a)之情形時,黏著劑組成物(I-4)較佳為進而含有交聯劑。[Crosslinking agent] In the case of using the aforementioned acrylic polymer having a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an alkyl (meth)acrylate as the adhesive resin (I-1a), the adhesive The composition (I-4) preferably further contains a crosslinking agent.
作為黏著劑組成物(I-4)中之交聯劑,可列舉與黏著劑組成物(I-1)中之交聯劑相同者。 黏著劑組成物(I-4)所含有之交聯劑可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些交聯劑之組合及比率可任意選擇。As the crosslinking agent in the adhesive composition (I-4), the same crosslinking agent as the crosslinking agent in the adhesive composition (I-1) can be mentioned. The cross-linking agent contained in the adhesive composition (I-4) may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these cross-linking agents can be arbitrarily selected.
於前述黏著劑組成物(I-4)中,相對於黏著性樹脂(I-1a)之含量100質量份,交聯劑之含量較佳為0.01質量份至50質量份,更佳為0.1質量份至25質量份,尤佳為0.1質量份至10質量份。In the aforementioned adhesive composition (I-4), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass relative to 100 parts by mass of the content of the adhesive resin (I-1a), more preferably 0.1 parts by mass parts to 25 parts by mass, particularly preferably 0.1 parts to 10 parts by mass.
[其他添加劑、溶媒] 黏著劑組成物(I-4)亦可於不損及本發明功效之範圍內,含有都不相當於上述任一成分之其他添加劑。 另外,黏著劑組成物(I-4)亦可以與黏著劑組成物(I-1)之情形相同之目的含有溶媒。 作為黏著劑組成物(I-4)中之前述其他添加劑及溶媒,分別可列舉與黏著劑組成物(I-1)中之其他添加劑及溶媒相同者。黏著劑組成物(I-4)所含有之其他添加劑及溶媒分別可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些其他添加劑及溶媒之組合及比率可任意選擇。 黏著劑組成物(I-4)之其他添加劑及溶媒之含量分別並無特別限定,可根據該其他添加劑及溶媒的種類而適當選擇。[Other additives and solvents] The adhesive composition (I-4) may also contain other additives that are not equivalent to any of the above-mentioned components within the scope of not impairing the efficacy of the present invention. In addition, the adhesive composition (I-4) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1). As the other additives and the solvent in the adhesive composition (I-4), the same ones as those in the adhesive composition (I-1) can be mentioned, respectively. The other additives and solvents contained in the adhesive composition (I-4) may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these other additives and vehicles can be selected arbitrarily. . The contents of the other additives and the solvent of the adhesive composition (I-4) are not particularly limited, respectively, and can be appropriately selected according to the types of the other additives and the solvent.
[黏著劑組成物之製造方法] 黏著劑組成物(I-1)至黏著劑組成物(I-3)或者黏著劑組成物(I-4)等黏著劑組成物(I-1)至黏著劑組成物(I-3)以外之黏著劑組成物係藉由將前述黏著劑、與視需要之前述黏著劑以外之成分等用以構成黏著劑組成物之各成分加以調配而獲得。 各成分之調配時之添加順序並無特別限定,亦可同時添加兩種以上之成分。 於使用溶媒之情形時,可藉由將溶媒與溶媒以外之任一調配成分混合將該調配成分預先稀釋來使用,亦可藉由不將溶媒以外之任一調配成分預先稀釋,而將溶媒與這些調配成分混合來使用。 於調配時混合各成分之方法並無特別限定,只要自下述公知方法中適當選擇即可:使攪拌子或攪拌翼等旋轉而進行混合之方法;使用混合機進行混合之方法;施加超音波進行混合之方法等。 各成分之添加及混合時之溫度以及時間只要各調配成分不劣化則並無特別限定,只要適當調節即可,溫度較佳為15℃至30℃。[Manufacturing method of adhesive composition] Adhesive composition (I-1) to adhesive composition (I-3) or adhesive composition (I-4) other than adhesive composition (I-1) to adhesive composition (I-3) The adhesive composition is obtained by blending the above-mentioned adhesive and components other than the above-mentioned adhesive as needed, which are used to form the adhesive composition. The order of addition at the time of preparing each component is not particularly limited, and two or more components may be added at the same time. In the case of using a solvent, it can be used by mixing the solvent with any formulation component other than the solvent by pre-diluting the formulation component, or by not pre-diluting any formulation component other than the solvent, and mixing the solvent with the solvent. These formulation components are mixed and used. The method of mixing the components during preparation is not particularly limited, and may be appropriately selected from the following well-known methods: a method of mixing by rotating a stirrer or a stirring blade; a method of mixing using a mixer; applying ultrasonic waves Methods of mixing, etc. The temperature and time at the time of addition and mixing of each component are not particularly limited as long as each compounded component is not deteriorated, and may be appropriately adjusted, and the temperature is preferably 15°C to 30°C.
○中間層 前述中間層為片狀或膜狀,含有樹脂。 中間層可由樹脂構成,亦可含有樹脂與樹脂以外之成分。 中間層例如可藉由將前述樹脂或含有前述樹脂之中間層形成用組成物加以成形而形成。另外,中間層亦可藉由在中間層的形成對象面塗敷前述中間層形成用組成物,視需要加以乾燥而形成。○Intermediate layer The said intermediate layer is a sheet shape or a film shape, and contains resin. The intermediate layer may be composed of resin, and may contain resin and components other than resin. The intermediate layer can be formed, for example, by molding the above-mentioned resin or the composition for forming an intermediate layer containing the above-mentioned resin. Moreover, an intermediate layer can also be formed by apply|coating the said composition for intermediate layer formation to the formation object surface of an intermediate layer, and drying as needed.
作為中間層的構成材料之前述樹脂並無特別限定。 作為中間層中之較佳的前述樹脂,例如可列舉:乙烯乙酸乙烯酯共聚物(EVA)、聚丙烯(PP)、聚乙烯(PE)、聚丙烯酸胺基甲酸酯(UA)等。The aforementioned resin as a constituent material of the intermediate layer is not particularly limited. As a preferable said resin in an intermediate layer, an ethylene vinyl acetate copolymer (EVA), a polypropylene (PP), a polyethylene (PE), a polyacrylate urethane (UA) etc. are mentioned, for example.
前述中間層形成用組成物之前述樹脂之含量並無特別限定,例如可設為80質量%以上、90質量%以上及95質量%以上等的任一種,這些為一例。Content of the said resin of the said composition for intermediate layer formation is not specifically limited, For example, it can be set to any of 80 mass % or more, 90 mass % or more, and 95 mass % or more, and these are an example.
中間層可由一層(單層)構成,亦可由兩層以上之多層構成,於由多層構成之情形時,這些多層可彼此相同亦可不同,這些多層之組合並無特別限定。The intermediate layer may be composed of one layer (single layer), or may be composed of two or more layers. When composed of multiple layers, these layers may be the same or different from each other, and the combination of these layers is not particularly limited.
中間層例如能夠藉由衝壓加工進行加工而製成任意形狀,較佳為圓形。The intermediate layer can be processed by, for example, punching to be formed into any shape, and a circular shape is preferable.
如上文所說明,中間層之寬度之最大值較佳為小於第一黏著劑層之寬度之最大值及基材之寬度之最大值。 中間層之寬度之最大值可考慮半導體晶圓之大小而適當選擇。例如,中間層之寬度之最大值亦可為150mm至160mm、200mm至210mm、或300mm至310mm。這些三個數值範圍係對應於相對於與半導體裝置製造用片之貼附面為平行之方向的寬度之最大值為150mm之半導體晶圓、上述寬度之最大值為200mm之半導體晶圓、或上述寬度之最大值為300mm之半導體晶圓。然而,如上文所說明,於進行伴隨半導體晶圓中之改質層之形成的切割後,藉由將半導體裝置製造用片加以擴展而切斷膜狀接著劑之情形時,如後述,將切割後之多數個半導體晶片(半導體晶片群)匯總在一起,於這些半導體晶片貼附半導體裝置製造用片。As explained above, the maximum value of the width of the intermediate layer is preferably smaller than the maximum value of the width of the first adhesive layer and the maximum value of the width of the substrate. The maximum value of the width of the intermediate layer can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum value of the width of the intermediate layer may also be 150 mm to 160 mm, 200 mm to 210 mm, or 300 mm to 310 mm. These three numerical ranges correspond to a semiconductor wafer having a maximum width of 150 mm with respect to a direction parallel to the attachment surface of the sheet for semiconductor device manufacturing, a semiconductor wafer having a maximum width of 200 mm above, or the above A semiconductor wafer with a maximum width of 300mm. However, as described above, when the film adhesive is cut by spreading the sheet for semiconductor device manufacturing after the dicing accompanying the formation of the modified layer in the semiconductor wafer, the dicing will be described later. After that, a plurality of semiconductor wafers (semiconductor wafer groups) are grouped together, and the sheet for semiconductor device production is attached to these semiconductor wafers.
於本說明書中,只要無特別說明,則所謂「中間層之寬度」,例如意指「相對於中間層的第一面為平行之方向的中間層之寬度」。例如,平面形狀為圓形之中間層之情形時,上述中間層之寬度之最大值成為前述平面形狀之圓之直徑。 這一情況於半導體晶圓之情形時亦相同。亦即,所謂「半導體晶圓之寬度」,意指「半導體晶圓的相對於與半導體裝置製造用片之貼附面為平行之方向的半導體晶圓之寬度」。例如,平面形狀為圓形之半導體晶圓之情形時,上述半導體晶圓之寬度之最大值成為前述平面形狀之圓之直徑。In this specification, unless otherwise specified, the "width of the intermediate layer" means, for example, "the width of the intermediate layer in a direction parallel to the first surface of the intermediate layer". For example, in the case of an intermediate layer whose plane shape is a circle, the maximum value of the width of the intermediate layer becomes the diameter of the circle in the plane shape. The same is true in the case of semiconductor wafers. That is, the "width of the semiconductor wafer" means "the width of the semiconductor wafer in the direction parallel to the attachment surface of the semiconductor device manufacturing sheet". For example, in the case of a semiconductor wafer whose planar shape is a circle, the maximum value of the width of the aforementioned semiconductor wafer becomes the diameter of the aforementioned planar shape.
150mm至160mm這種中間層之寬度之最大值意指相對於150mm這種半導體晶圓之寬度之最大值為同等,或者大不超過10mm之範圍。 同樣地,200mm至210mm這種中間層之寬度之最大值意指相對於200mm這種半導體晶圓之寬度之最大值為同等,或者大不超過10mm之範圍。 同樣地,300mm至310mm這種中間層之寬度之最大值意指相對於300mm這種半導體晶圓之寬度之最大值為同等,或者大不超過10mm之範圍。 亦即,本實施形態中,無論半導體晶圓之寬度之最大值為150mm、200mm及300mm的哪一種,中間層之寬度之最大值與半導體晶圓之寬度之最大值的差均可為例如0至10mm。 藉由中間層之寬度之最大值滿足此種條件,於藉由前述半導體裝置製造用片的擴展而切斷膜狀接著劑時,抑制切斷後的膜狀接著劑之意外之飛散的效果會提高。The maximum value of the width of the intermediate layer of 150 mm to 160 mm means that the maximum value of the width of the semiconductor wafer is equivalent to 150 mm, or the range is not more than 10 mm. Likewise, the maximum value of the width of the intermediate layer of 200mm to 210mm is meant to be equivalent to the maximum value of the width of the semiconductor wafer of 200mm, or a range of not more than 10mm. Likewise, the maximum value of the width of the intermediate layer of 300 mm to 310 mm is meant to be equivalent to the maximum value of the width of the semiconductor wafer of 300 mm, or a range of not more than 10 mm. That is, in this embodiment, no matter which of the maximum width of the semiconductor wafer is 150 mm, 200 mm and 300 mm, the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer can be, for example, 0. to 10mm. When the maximum value of the width of the intermediate layer satisfies such a condition, when the film adhesive is cut by the expansion of the semiconductor device manufacturing sheet, the effect of suppressing the unexpected scattering of the film adhesive after cutting is enhanced. .
中間層之厚度可根據目的而適當選擇,可為10μm以上,亦可為10μm至150μm,亦可為15μm至120μm,亦可為15μm至90μm,亦可為15μm至60μm。或者,亦可為30μm至120μm,亦可為60μm至120μm。藉由中間層之厚度為前述下限值以上,中間層之結構變得更穩定。藉由中間層之厚度為前述上限值以下,於刀片切割時或半導體裝置製造用片之擴展時,能夠更容易地切斷膜狀接著劑。 此處,所謂「中間層之厚度」,意指中間層整體之厚度,例如所謂由多層構成之中間層之厚度,意指構成中間層的所有層之合計厚度。The thickness of the intermediate layer can be appropriately selected according to the purpose, and may be 10 μm or more, 10 μm to 150 μm, 15 μm to 120 μm, 15 μm to 90 μm, or 15 μm to 60 μm. Alternatively, it may be 30 μm to 120 μm, or 60 μm to 120 μm. By making the thickness of the intermediate layer more than the aforementioned lower limit value, the structure of the intermediate layer becomes more stable. When the thickness of the intermediate layer is below the aforementioned upper limit value, the film-like adhesive can be cut more easily at the time of blade dicing or at the time of spreading of the sheet for semiconductor device manufacturing. Here, the "thickness of the intermediate layer" means the thickness of the entire intermediate layer, for example, the thickness of the intermediate layer composed of multiple layers means the total thickness of all the layers constituting the intermediate layer.
○膜狀接著劑 前述膜狀接著劑具有硬化性,較佳為具有熱硬化性,且較佳為具有感壓接著性。一併具有熱硬化性及感壓接著性之膜狀接著劑在未硬化狀態下能夠藉由輕輕按壓而貼附於各種被黏附體。另外,膜狀接著劑亦可藉由加熱使之軟化而貼附於各種被黏附體。膜狀接著劑藉由硬化而最終成為耐衝擊性高之硬化物,該硬化物於嚴酷之高溫、高濕度條件下仍可保持充分的接著特性。○Film adhesive The film-like adhesive has curability, preferably thermosetting, and preferably pressure-sensitive adhesive. A film-like adhesive that has both thermosetting properties and pressure-sensitive adhesive properties can be attached to various adherends by light pressing in an uncured state. In addition, the film adhesive can be softened by heating and attached to various adherends. The film adhesive finally becomes a cured product with high impact resistance by curing, and the cured product can still maintain sufficient adhesion properties under severe high temperature and high humidity conditions.
膜狀接著劑例如能夠藉由衝壓加工進行加工而製成任意形狀。The film-like adhesive can be processed into any shape by, for example, pressing.
於自上方朝下看而俯視半導體裝置製造用片時,膜狀接著劑之面積(亦即第一面之面積)較佳為以接近分割前之半導體晶圓之面積之方式,設定成小於基材之面積(亦即第一面之面積)及第一黏著劑層之面積(亦即第一面之面積)。此種半導體裝置製造用片中,於第一黏著劑層的第一面的一部分,存在未與中間層及膜狀接著劑接觸之區域(亦即前述非積層區域)。藉此,半導體裝置製造用片之擴展變得更容易,並且於擴展時施加於膜狀接著劑之力不分散,故而能夠更容易地切斷膜狀接著劑。When the wafer for semiconductor device manufacturing is viewed from above, the area of the film-like adhesive (that is, the area of the first surface) is preferably set to be smaller than the base so as to be close to the area of the semiconductor wafer before division. The area of the material (that is, the area of the first side) and the area of the first adhesive layer (that is, the area of the first side). In such a sheet for manufacturing a semiconductor device, in a part of the first surface of the first adhesive layer, there is a region (that is, the non-lamination region) that is not in contact with the intermediate layer and the film-like adhesive. Thereby, expansion of the sheet for semiconductor device manufacturing becomes easier, and the force applied to the film-like adhesive during expansion is not dispersed, so that the film-like adhesive can be cut more easily.
膜狀接著劑可使用含有該膜狀接著劑的構成材料之接著劑組成物而形成。例如,藉由在膜狀接著劑的形成對象面塗敷接著劑組成物,視需要加以乾燥,而可於目標部位形成膜狀接著劑。The film-like adhesive can be formed using an adhesive composition containing the constituent materials of the film-like adhesive. For example, the film-like adhesive can be formed on the target site by applying the adhesive composition to the surface to be formed with the film-like adhesive, and drying it if necessary.
接著劑組成物之塗敷可藉由與上述黏著劑組成物之塗敷之情形相同之方法進行。The application of the adhesive composition can be performed by the same method as in the case of the above-mentioned application of the adhesive composition.
接著劑組成物之乾燥條件並無特別限定。接著劑組成物於含有後述溶媒之情形時,較佳為進行加熱乾燥,於該情形時,例如較佳為於70℃至130℃以10秒鐘至5分鐘之條件乾燥。The drying conditions of the adhesive composition are not particularly limited. In the case of containing the solvent described later, the adhesive composition is preferably dried by heating, and in this case, for example, it is preferably dried at 70° C. to 130° C. for 10 seconds to 5 minutes.
膜狀接著劑可由一層(單層)構成,亦可由兩層以上之多層構成,於由多層構成之情形時,這些多層可彼此相同亦可不同,這些多層之組合並無特別限定。The film-like adhesive may be composed of one layer (single layer), or may be composed of two or more layers. When composed of multiple layers, these layers may be the same or different from each other, and the combination of these layers is not particularly limited.
如上文所說明,膜狀接著劑之寬度之最大值小於第一黏著劑層之寬度之最大值及基材之寬度之最大值。 膜狀接著劑之寬度之最大值亦可相對於半導體晶圓之大小,與上文所說明之中間層之寬度之最大值相同。 亦即,膜狀接著劑之寬度之最大值可考慮半導體晶圓之大小而適當選擇。例如,膜狀接著劑之寬度之最大值亦可為150mm至160mm、200mm至210mm或300至310mm。這些三個數值範圍係對應於相對於與半導體裝置製造用片之貼附面為平行之方向的寬度之最大值為150mm之半導體晶圓、上述寬度之最大值為200mm之半導體晶圓、或上述寬度之最大值為300mm之半導體晶圓。As explained above, the maximum value of the width of the film adhesive is smaller than the maximum value of the width of the first adhesive layer and the maximum value of the width of the substrate. The maximum value of the width of the film adhesive may also be the same as the maximum value of the width of the interlayer described above with respect to the size of the semiconductor wafer. That is, the maximum value of the width of the film-like adhesive can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum value of the width of the film adhesive may also be 150 mm to 160 mm, 200 mm to 210 mm, or 300 to 310 mm. These three numerical ranges correspond to a semiconductor wafer having a maximum width of 150 mm with respect to a direction parallel to the attachment surface of the sheet for semiconductor device manufacturing, a semiconductor wafer having a maximum width of 200 mm above, or the above A semiconductor wafer with a maximum width of 300mm.
於本說明書中,只要無特別說明,則所謂「膜狀接著劑之寬度」,例如意指「相對於膜狀接著劑的第一面為平行之方向的膜狀接著劑之寬度」。例如,平面形狀為圓形之膜狀接著劑之情形時,上述膜狀接著劑之寬度之最大值成為前述平面形狀之圓之直徑。 另外,只要無特別說明,則所謂「膜狀接著劑之寬度」,意指後述的於具膜狀接著劑之半導體晶片之製造過程中的「切斷前(未切斷)的膜狀接著劑之寬度」,而非切斷後的膜狀接著劑之寬度。In this specification, unless otherwise specified, the "width of the film-like adhesive" means, for example, "the width of the film-like adhesive in a direction parallel to the first surface of the film-like adhesive". For example, in the case of a film-like adhesive whose plane shape is a circle, the maximum value of the width of the film-like adhesive becomes the diameter of the circle of the plane shape. In addition, unless otherwise specified, the "width of the film-like adhesive" means "the film-like adhesive before cutting (uncut) in the process of manufacturing a semiconductor wafer with the film-like adhesive, which will be described later. width” rather than the width of the film adhesive after cutting.
150mm至160mm這種膜狀接著劑之寬度之最大值意指相對於150mm這種半導體晶圓之寬度之最大值為同等,或者大不超過10mm之範圍。 同樣地,200mm至210mm這種膜狀接著劑之寬度之最大值意指相對於200mm這種半導體晶圓之寬度之最大值為同等,或者大不超過10mm之範圍。 同樣地,300mm至310mm這種膜狀接著劑之寬度之最大值意指相對於300mm這種半導體晶圓之寬度之最大值為同等,或者大不超過10mm之範圍。 亦即,於本實施形態中,無論半導體晶圓之寬度之最大值為150mm、200mm及300mm的哪一種,膜狀接著劑之寬度之最大值與半導體晶圓之寬度之最大值的差均可為例如0mm至10mm。 藉由膜狀接著劑之寬度之最大值滿足此種條件,於藉由前述半導體裝置製造用片的擴展而切斷膜狀接著劑時,抑制切斷後的膜狀接著劑之意外之飛散的效果會提高。The maximum value of the width of the film adhesive of 150 mm to 160 mm means that the maximum value of the width of the semiconductor wafer of 150 mm is the same, or a range of not more than 10 mm. Likewise, the maximum value of the width of the film adhesive of 200 mm to 210 mm means that the maximum value of the width of the semiconductor wafer of 200 mm is the same, or a range of not more than 10 mm. Likewise, the maximum value of the width of the film adhesive of 300 mm to 310 mm means that the maximum value of the width of the semiconductor wafer of 300 mm is the same, or a range not exceeding 10 mm. That is, in the present embodiment, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm or 300 mm, the difference between the maximum width of the film adhesive and the maximum width of the semiconductor wafer may be any difference. For example, 0 mm to 10 mm. By satisfying such a condition by the maximum value of the width of the film-like adhesive, when the film-like adhesive is cut by the expansion of the aforementioned semiconductor device manufacturing sheet, the effect of suppressing the unexpected scattering of the film-like adhesive after cutting is achieved. will improve.
於本實施形態中,中間層之寬度之最大值及膜狀接著劑之寬度之最大值均可為上述數值範圍之任一種。 亦即,作為本實施形態之半導體裝置製造用片之一例,可列舉:中間層之寬度之最大值及膜狀接著劑之寬度之最大值均為150mm至160mm、200mm至210mm、或300mm至310mm。In this embodiment, the maximum value of the width of the intermediate layer and the maximum value of the width of the film adhesive may be any of the above-mentioned numerical ranges. That is, as an example of the sheet for manufacturing a semiconductor device of the present embodiment, the maximum value of the width of the intermediate layer and the maximum value of the width of the film adhesive are both 150 mm to 160 mm, 200 mm to 210 mm, or 300 mm to 310 mm. .
膜狀接著劑之厚度並無特別限定,較佳為1μm至30μm,更佳為2μm至20μm,尤佳為3μm至10μm。藉由膜狀接著劑之厚度為前述下限值以上,可獲得對被黏附體(半導體晶片)更高之接著力。藉由膜狀接著劑之厚度為前述上限值以下,於刀片切割時或半導體裝置製造用片之前述擴展時,能夠更容易地切斷膜狀接著劑。 此處,所謂「膜狀接著劑之厚度」,意指膜狀接著劑整體之厚度,例如所謂由多層構成之膜狀接著劑之厚度,意指構成膜狀接著劑的所有層之合計厚度。The thickness of the film adhesive is not particularly limited, but is preferably 1 μm to 30 μm, more preferably 2 μm to 20 μm, and particularly preferably 3 μm to 10 μm. When the thickness of the film-like adhesive is more than the aforementioned lower limit value, a higher adhesive force to the adherend (semiconductor wafer) can be obtained. When the thickness of the film-like adhesive is below the above-mentioned upper limit value, the film-like adhesive can be cut more easily at the time of blade dicing or the above-mentioned expansion of the sheet for semiconductor device manufacturing. Here, the "thickness of the film adhesive" means the thickness of the entire film adhesive, for example, the thickness of the film adhesive composed of multiple layers means the total thickness of all layers constituting the film adhesive.
於本實施形態中,較佳為前述中間層及膜狀接著劑之總厚為15μm以上,更佳為20μm至180μm,進而較佳為30μm至140μm,尤佳為50μm至130μm。 藉由總厚為前述下限值以上,而減少於衝壓加工時於無用部分之去除中發生斷裂之虞。藉由總厚為前述上限值以下,則有防止捲印之效果優異之傾向。 再者,於實施形態之半導體裝置製造用片不具有中間層之情形時,所謂中間層及膜狀接著劑之總厚,可意指僅膜狀接著劑之厚度,膜狀接著劑之厚度可為15μm以上,可為15μm至30μm,可為15μm至20μm。In this embodiment, the total thickness of the intermediate layer and the film adhesive is preferably 15 μm or more, more preferably 20 μm to 180 μm, further preferably 30 μm to 140 μm, and particularly preferably 50 μm to 130 μm. When the total thickness is equal to or more than the aforementioned lower limit value, the risk of breakage during removal of useless portions during press working is reduced. When the total thickness is below the aforementioned upper limit value, there is a tendency that the effect of preventing smearing is excellent. Furthermore, when the sheet for manufacturing a semiconductor device of the embodiment does not have an intermediate layer, the total thickness of the intermediate layer and the film-like adhesive may mean the thickness of only the film-like adhesive, and the thickness of the film-like adhesive may be It may be 15 μm or more, 15 μm to 30 μm, or 15 μm to 20 μm.
中間層及膜狀接著劑可為相同形狀,中間層及膜狀接著劑較佳為以這些層之俯視形狀之外周為一致之方式積層。The intermediate layer and the film-like adhesive may have the same shape, but the intermediate layer and the film-like adhesive are preferably laminated so that the outer peripheries of the top-view shapes of these layers are the same.
繼而,針對前述接著劑組成物加以說明。 下述接著劑組成物例如能以含量(質量%)之合計不超過100質量%之方式含有下述的一種以上之成分。Next, the aforementioned adhesive composition will be described. The following adhesive composition may contain, for example, one or more of the following components so that the total content (mass %) does not exceed 100 mass %.
[接著劑組成物] 作為較佳之接著劑組成物,例如可列舉含有聚合物成分(a)及熱硬化性樹脂者。以下,針對各成分加以說明。 再者,以下所示之接著劑組成物為較佳一例,本實施形態中之接著劑組成物不限定於以下所示者。[Adhesive composition] As a preferable adhesive composition, what contains a polymer component (a) and a thermosetting resin is mentioned, for example. Hereinafter, each component is demonstrated. In addition, the adhesive composition shown below is a preferable example, and the adhesive composition in this embodiment is not limited to what is shown below.
[聚合物成分(a)] 聚合物成分(a)係被視為聚合性化合物進行聚合反應而形成之成分,且係用以對膜狀接著劑賦予造膜性或可撓性等,並且提高對半導體晶片等接著對象之接著性(換言之貼附性)的聚合物化合物。聚合物成分(a)具有熱塑性,不具有熱硬化性。[Polymer component (a)] The polymer component (a) is regarded as a component formed by a polymerization reaction of a polymerizable compound, and is used to impart film-forming properties, flexibility, etc. to a film-like adhesive, and to improve the adhesion to an object to be bonded such as a semiconductor wafer. Properties (in other words, adhesive properties) of polymer compounds. The polymer component (a) has thermoplastic properties and does not have thermosetting properties.
接著劑組成物及膜狀接著劑所含有之聚合物成分(a)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些聚合物成分(a)之組合及比率可任意選擇。The polymer component (a) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these polymer components (a) Can be arbitrarily selected.
作為聚合物成分(a),例如可列舉:丙烯酸樹脂、胺基甲酸酯樹脂、苯氧基樹脂、聚矽氧樹脂、飽和聚酯樹脂等,較佳為丙烯酸樹脂。作為前述丙烯酸樹脂,可列舉公知之丙烯酸聚合物。As a polymer component (a), an acrylic resin, a urethane resin, a phenoxy resin, a silicone resin, a saturated polyester resin, etc. are mentioned, for example, Preferably it is an acrylic resin. As said acrylic resin, a well-known acrylic polymer is mentioned.
於接著劑組成物中,聚合物成分(a)之含量相對於溶媒以外之所有成分之總含量的比率(亦即,膜狀接著劑中的聚合物成分(a)之含量相對於膜狀接著劑之總質量的比率)較佳為20質量%至75質量%,更佳為30質量%至65質量%。In the adhesive composition, the ratio of the content of the polymer component (a) to the total content of all components other than the solvent (that is, the content of the polymer component (a) in the film adhesive relative to the film adhesive) The ratio of the total mass of the agent) is preferably 20% by mass to 75% by mass, more preferably 30% by mass to 65% by mass.
[熱硬化性成分] 熱硬化性成分為用以使熱硬化性保護膜形成用膜硬化而形成硬質之保護膜之成分。 接著劑組成物所含有之熱硬化性成分可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些熱硬化性成分之組合及比率可任意選擇。[Thermosetting ingredient] A thermosetting component is a component for forming a hard protective film by hardening the film for thermosetting protective film formation. The thermosetting components contained in the adhesive composition may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these thermosetting components can be arbitrarily selected.
作為熱硬化性成分,例如可列舉環氧系熱硬化性樹脂、聚醯亞胺系樹脂、不飽和聚酯樹脂等,較佳為環氧系熱硬化性樹脂。As a thermosetting component, an epoxy type thermosetting resin, a polyimide type resin, an unsaturated polyester resin etc. are mentioned, for example, Preferably it is an epoxy type thermosetting resin.
[環氧系熱硬化性樹脂(b)] 環氧系熱硬化性樹脂(b)包含於前述熱硬化性成分之概念,具有熱硬化性,為用以使膜狀接著劑進行熱硬化之成分。 環氧系熱硬化性樹脂(b)係由環氧樹脂(b1)及熱硬化劑(b2)所構成。 接著劑組成物及膜狀接著劑所含有之環氧系熱硬化性樹脂(b)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些環氧系熱硬化性樹脂(b)之組合及比率可任意選擇。[Epoxy thermosetting resin (b)] The epoxy-based thermosetting resin (b) is included in the concept of the above-mentioned thermosetting component, has thermosetting properties, and is a component for thermosetting a film-like adhesive. The epoxy-based thermosetting resin (b) is composed of an epoxy resin (b1) and a thermosetting agent (b2). The epoxy-based thermosetting resin (b) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types, and in the case of two or more types, these epoxy type thermosetting resins (b) The combination and ratio of resin (b) can be arbitrarily selected.
·環氧樹脂(b1) 作為環氧樹脂(b1),可列舉公知者,例如可列舉:多官能系環氧樹脂、聯苯化合物、雙酚A二縮水甘油醚及其氫化物、鄰甲酚酚醛清漆環氧樹脂、二環戊二烯型環氧樹脂、聯苯型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、伸苯基骨架型環氧樹脂等、二官能以上之環氧化合物。·Epoxy resin (b1) As the epoxy resin (b1), known ones can be mentioned, for example, polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenated products, o-cresol novolak epoxy resins, Cyclopentadiene type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin, etc., epoxy compounds with more than two functions.
作為環氧樹脂(b1),亦可使用具有不飽和烴基之環氧樹脂。具有不飽和烴基之環氧樹脂相較於不具有不飽和烴基之環氧樹脂而言,與丙烯酸系樹脂之互溶性更高。因此,藉由使用具有不飽和烴基之環氧樹脂,使用膜狀接著劑所得之封裝體之可靠性提高。As the epoxy resin (b1), an epoxy resin having an unsaturated hydrocarbon group can also be used. The epoxy resin having an unsaturated hydrocarbon group has a higher mutual solubility with the acrylic resin than the epoxy resin having no unsaturated hydrocarbon group. Therefore, by using the epoxy resin which has an unsaturated hydrocarbon group, the reliability of the package obtained by using a film adhesive improves.
接著劑組成物及膜狀接著劑所含有之環氧樹脂(b1)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些環氧樹脂(b1)之組合及比率可任意選擇。The epoxy resin (b1) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these epoxy resins (b1) Can be arbitrarily selected.
·熱硬化劑(b2) 熱硬化劑(b2)作為針對環氧樹脂(b1)之硬化劑發揮功能。 作為熱硬化劑(b2),例如可列舉一分子中具有2個以上之能夠與環氧基反應之官能基的化合物。作為前述官能基,例如可列舉酚性羥基、醇性羥基、胺基、羧基、酸基經酸酐化之基等,較佳為酚性羥基、胺基或酸基經酸酐化之基,更佳為酚性羥基或胺基。· Thermal hardener (b2) The thermosetting agent (b2) functions as a curing agent for the epoxy resin (b1). As a thermosetting agent (b2), the compound which has two or more functional groups which can react with an epoxy group in one molecule is mentioned, for example. Examples of the functional group include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and acid anhydride groups. Preferably, phenolic hydroxyl groups, amino groups, or acid groups are acid anhydride groups, and more preferably For phenolic hydroxyl or amine group.
熱硬化劑(b2)中,作為具有酚性羥基之酚系硬化劑,例如可列舉:多官能酚樹脂、聯苯酚、酚醛清漆型酚樹脂、二環戊二烯型酚樹脂、芳烷基型酚樹脂等。 熱硬化劑(b2)中,作為具有胺基之胺系硬化劑,例如可列舉二氰二胺(DICY)等。Among the thermosetting agents (b2), examples of the phenol-based curing agent having a phenolic hydroxyl group include polyfunctional phenol resins, biphenols, novolak-type phenol resins, dicyclopentadiene-type phenol resins, and aralkyl-type phenol resins. Phenolic resin, etc. In a thermosetting agent (b2), as an amine type hardening agent which has an amine group, dicyandiamine (DICY) etc. are mentioned, for example.
熱硬化劑(b2)亦可具有不飽和烴基。The thermal hardener (b2) may have an unsaturated hydrocarbon group.
接著劑組成物及膜狀接著劑所含有之熱硬化劑(b2)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些熱硬化劑(b2)之組合及比率可任意選擇。The thermosetting agent (b2) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these thermosetting agents (b2) Can be arbitrarily selected.
於接著劑組成物及膜狀接著劑中,相對於環氧樹脂(b1)之含量100質量份,熱硬化劑(b2)之含量較佳為0.1質量份至500質量份,更佳為1質量份至200質量份,例如可為1質量份至100質量份、1質量份至50質量份及1質量份至25質量份的任一種。藉由熱硬化劑(b2)之前述含量為前述下限值以上,變得更容易進行膜狀接著劑之硬化。藉由熱硬化劑(b2)之前述含量為前述上限值以下,膜狀接著劑之吸濕率降低,使用膜狀接著劑所得之封裝體之可靠性進一步提高。In the adhesive composition and the film adhesive, the content of the thermosetting agent (b2) is preferably 0.1 to 500 parts by mass relative to 100 parts by mass of the epoxy resin (b1), more preferably 1 part by mass Parts to 200 parts by mass may be, for example, any of 1 part by mass to 100 parts by mass, 1 part by mass to 50 parts by mass, and 1 part by mass to 25 parts by mass. When the said content of a thermosetting agent (b2) is more than the said lower limit, hardening of a film adhesive becomes easier. When the said content of a thermosetting agent (b2) is below the said upper limit, the moisture absorption rate of a film adhesive falls, and the reliability of the package obtained using a film adhesive is further improved.
於接著劑組成物及膜狀接著劑中,相對於聚合物成分(a)之含量100質量份,熱硬化性樹脂之含量(較佳為環氧系熱硬化性樹脂、亦即環氧樹脂(b1)及熱硬化劑(b2)之總含量)較佳為5質量份至100質量份,更佳為5質量份至75質量份,尤佳為5質量份至50質量份,例如亦可為5質量份至35質量份及5質量份至20質量份的任一種。藉由熱硬化性樹脂之前述含量為此種範圍,中間層與膜狀接著劑之間的剝離力更穩定。In the adhesive composition and the film-like adhesive, the content of the thermosetting resin (preferably epoxy-based thermosetting resin, that is, epoxy resin ( The total content of b1) and the thermosetting agent (b2)) is preferably 5 parts by mass to 100 parts by mass, more preferably 5 parts by mass to 75 parts by mass, particularly preferably 5 parts by mass to 50 parts by mass, such as Any of 5 parts by mass to 35 parts by mass and 5 parts by mass to 20 parts by mass. When the aforementioned content of the thermosetting resin is in such a range, the peeling force between the intermediate layer and the film-like adhesive becomes more stable.
前述膜狀接著劑亦可為了改良該膜狀接著劑的各種物性,而除了聚合物成分(a)及熱硬化性樹脂以外,視需要進而含有不相當於這些成分之其他成分。 作為前述膜狀接著劑所含有之其他成分中之較佳者,例如可列舉:硬化促進劑(c)、填充材(d)、偶合劑(e)、交聯劑(f)、能量線硬化性樹脂(g)、光聚合起始劑(h)、通用添加劑(i)等。In order to improve various physical properties of the film-like adhesive, the film-like adhesive may further contain other components not corresponding to these components in addition to the polymer component (a) and the thermosetting resin, if necessary. Preferable ones among the other components contained in the film adhesive include, for example, a curing accelerator (c), a filler (d), a coupling agent (e), a crosslinking agent (f), energy ray curing resin (g), photopolymerization initiator (h), general additive (i), etc.
[硬化促進劑(c)] 硬化促進劑(c)為用以調節接著劑組成物之硬化速度之成分。 作為較佳之硬化促進劑(c),例如可列舉:三乙二胺、苄基二甲基胺、三乙醇胺、二甲基胺基乙醇、三(二甲基胺基甲基)苯酚等三級胺;2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑等咪唑類(一個以上之氫原子經氫原子以外之基取代的咪唑);三丁基膦、二苯基膦、三苯基膦等有機膦類(一個以上之氫原子經有機基取代的膦);四苯基硼四苯基鏻、四苯基硼三苯基膦等四苯基硼鹽等。[Hardening accelerator (c)] The hardening accelerator (c) is a component for adjusting the hardening rate of the adhesive composition. As a preferable hardening accelerator (c), tertiary grades, such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl)phenol, are mentioned, for example. Amines; 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl- Imidazoles such as 5-hydroxymethylimidazole (imidazoles in which one or more hydrogen atoms are substituted by groups other than hydrogen atoms); organic phosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine (more than one hydrogen atom) Phosphine substituted by an organic group); tetraphenyl boron salts such as tetraphenyl boron tetraphenyl phosphonium, tetraphenyl boron triphenyl phosphine, etc.
接著劑組成物及膜狀接著劑所含有之硬化促進劑(c)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些硬化促進劑(c)之組合及比率可任意選擇。The hardening accelerator (c) contained in the adhesive composition and the film adhesive may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these hardening accelerators (c) Can be arbitrarily selected.
於使用硬化促進劑(c)之情形時,於接著劑組成物及膜狀接著劑中,相對於環氧系熱硬化性樹脂(b)之含量100質量份,硬化促進劑(c)之含量較佳為0.01質量份至10質量份,更佳為0.1質量份至5質量份。藉由硬化促進劑(c)之前述含量為前述下限值以上,可更顯著地獲得藉由使用硬化促進劑(c)所得之效果。藉由硬化促進劑(c)之含量為前述上限值以下,例如高極性之硬化促進劑(c)於高溫、高濕度條件下於膜狀接著劑中朝與被黏附體之接著界面側移動而偏析的抑制效果變高,使用膜狀接著劑所得之封裝體之可靠性進一步提高。於不含有硬化促進劑(c)之情形時,膜狀接著劑之製造變得更容易。When the curing accelerator (c) is used, in the adhesive composition and the film adhesive, the content of the curing accelerator (c) is 100 parts by mass relative to the content of the epoxy-based thermosetting resin (b) of 100 parts by mass. It is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass. By making the said content of the hardening accelerator (c) more than the said lower limit, the effect obtained by using the hardening accelerator (c) can be acquired more remarkably. When the content of the hardening accelerator (c) is below the above-mentioned upper limit, for example, the high-polarity hardening accelerator (c) moves in the film adhesive under high temperature and high humidity conditions to the side of the bonding interface with the adherend. On the other hand, the effect of suppressing segregation becomes high, and the reliability of the package obtained by using the film adhesive is further improved. When the hardening accelerator (c) is not contained, the production of the film adhesive becomes easier.
[填充材(d)] 膜狀接著劑藉由含有填充材(d),因擴展所致之膜狀接著劑的切斷性進一步提高。另外,膜狀接著劑藉由含有填充材(d),膜狀接著劑的熱膨脹係數之調整變容易,藉由針對膜狀接著劑之貼附對象物將該熱膨脹係數進行最佳化,使用膜狀接著劑所得之封裝體之可靠性進一步提高。另外,藉由膜狀接著劑含有填充材(d),亦能夠降低硬化後之膜狀接著劑之吸濕率,或提高散熱性。[filler (d)] When the film adhesive contains the filler (d), the cutting property of the film adhesive by spreading is further improved. In addition, when the film-like adhesive contains the filler (d), the adjustment of the thermal expansion coefficient of the film-like adhesive becomes easy. The reliability of the package obtained by the adhesive is further improved. Moreover, when a film adhesive contains a filler (d), the moisture absorption rate of the film adhesive after hardening can also be reduced, or heat dissipation can be improved.
填充材(d)可為有機填充材及無機填充材之任一種,較佳為無機填充材。 作為較佳之無機填充材,例如可列舉:二氧化矽、氧化鋁、滑石、碳酸鈣、鈦白、鐵丹、碳化矽、氮化硼等之粉末;將這些無機填充材加以球形化而成之珠粒;這些無機填充材之表面改質品;這些無機填充材之單晶纖維;玻璃纖維等。 這些之中,無機填充材較佳為二氧化矽或氧化鋁。The filler (d) may be any of an organic filler and an inorganic filler, preferably an inorganic filler. As preferred inorganic fillers, for example, powders of silicon dioxide, alumina, talc, calcium carbonate, titanium dioxide, iron dan, silicon carbide, boron nitride, etc.; these inorganic fillers are spheroidized. Beads; surface modification products of these inorganic fillers; single crystal fibers of these inorganic fillers; glass fibers, etc. Among these, the inorganic filler is preferably silica or alumina.
接著劑組成物及膜狀接著劑所含有之填充材(d)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些填充材(d)之組合及比率可任意選擇。The filler (d) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types. In the case of two or more types, the combination and ratio of these fillers (d) may be arbitrary. choose.
於使用填充材(d)之情形時,於接著劑組成物中,填充材(d)之含量相對於溶媒以外之所有成分之總含量的比率(亦即,膜狀接著劑中的填充材(d)之含量相對於膜狀接著劑之總質量的比率)較佳為5質量%至80質量%,更佳為10質量%至70質量%,尤佳為20質量%至60質量%。藉由前述比率為此種範圍,而可更顯著地獲得藉由使用前述填充材(d)所得之效果。When the filler (d) is used, in the adhesive composition, the ratio of the content of the filler (d) to the total content of all components other than the solvent (that is, the filler ( The content of d) is preferably 5 to 80 mass %, more preferably 10 to 70 mass %, particularly preferably 20 to 60 mass %, relative to the total mass of the film adhesive. When the said ratio is such a range, the effect obtained by using the said filler (d) can be acquired more remarkably.
[偶合劑(e)] 膜狀接著劑藉由含有偶合劑(e),對被黏附體之接著性及密接性提高。另外,藉由膜狀接著劑含有偶合劑(e),該膜狀接著劑之硬化物於不損及耐熱性之情況下耐水性提高。偶合劑(e)具有能與無機化合物或有機化合物反應之官能基。[Coupling agent (e)] When the film adhesive contains the coupling agent (e), the adhesiveness and adhesiveness to the adherend are improved. In addition, when the film-like adhesive contains the coupling agent (e), the water resistance of the cured product of the film-like adhesive is improved without impairing the heat resistance. The coupling agent (e) has a functional group capable of reacting with an inorganic compound or an organic compound.
偶合劑(e)較佳為具有能與聚合物成分(a)、環氧系熱硬化性樹脂(b)等所具有之官能基反應的官能基之化合物,更佳為矽烷偶合劑。The coupling agent (e) is preferably a compound having a functional group capable of reacting with the functional group possessed by the polymer component (a), the epoxy-based thermosetting resin (b), and the like, and is more preferably a silane coupling agent.
接著劑組成物及膜狀接著劑所含有之偶合劑(e)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些偶合劑(e)之組合及比率可任意選擇。The coupling agent (e) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these coupling agents (e) may be arbitrary choose.
於使用偶合劑(e)之情形時,於接著劑組成物及膜狀接著劑中,相對於聚合物成分(a)及環氧系熱硬化性樹脂(b)之總含量100質量份,偶合劑(e)之含量較佳為0.03質量份至20質量份,更佳為0.05質量份至10質量份,尤佳為0.1質量份至5質量份。藉由偶合劑(e)之前述含量為前述下限值以上,可更顯著地獲得填充材(d)於樹脂中之分散性提高、或膜狀接著劑與被黏附體之接著性之提高等藉由使用偶合劑(e)所得之效果。藉由偶合劑(e)之前述含量為前述上限值以下,而進一步抑制逸氣(outgas)之產生。In the case of using the coupling agent (e), in the adhesive composition and the film-like adhesive, the amount of the coupling agent is 100 parts by mass relative to the total content of the polymer component (a) and the epoxy-based thermosetting resin (b) 100 parts by mass. The content of the mixture (e) is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, particularly preferably 0.1 to 5 parts by mass. When the above-mentioned content of the coupling agent (e) is more than the above-mentioned lower limit value, the dispersibility of the filler (d) in the resin, or the adhesion between the film-like adhesive and the adherend can be more significantly improved. The effect obtained by using the coupling agent (e). When the said content of a coupling agent (e) is below the said upper limit, generation|occurrence|production of outgas (outgas) is suppressed further.
[交聯劑(f)] 於使用上述丙烯酸系樹脂等具有能與其他化合物鍵結之乙烯基、(甲基)丙烯醯基、胺基、羥基、羧基、異氰酸酯基等官能基之化合物來作為聚合物成分(a)之情形時,接著劑組成物及膜狀接著劑亦可含有交聯劑(f)。交聯劑(f)為用以使聚合物成分(a)中的前述官能基與其他化合物鍵結而進行交聯之成分,藉由以此方式進行交聯,能夠調節膜狀接著劑之初始接著力及凝聚力。[Crosslinking agent (f)] In the case of using a compound having functional groups such as vinyl group, (meth)acryloyl group, amine group, hydroxyl group, carboxyl group, isocyanate group, etc. which can be bonded to other compounds, such as the above-mentioned acrylic resin, as the polymer component (a) In this case, the adhesive composition and the film-like adhesive may contain a crosslinking agent (f). The cross-linking agent (f) is a component for cross-linking by bonding the aforementioned functional groups in the polymer component (a) with other compounds, and by performing cross-linking in this way, the initial stage of the film-like adhesive can be adjusted. Adhesion and cohesion.
作為交聯劑(f),例如可列舉:有機多元異氰酸酯化合物、有機多元亞胺化合物、金屬螯合物系交聯劑(具有金屬螯合物結構之交聯劑)、氮丙啶系交聯劑(具有氮丙啶基之交聯劑)等。Examples of the crosslinking agent (f) include organic polyvalent isocyanate compounds, organic polyvalent imine compounds, metal chelate-based crosslinking agents (crosslinking agents having a metal chelate structure), and aziridine-based crosslinking agents. agent (crosslinking agent with aziridine group), etc.
於使用有機多元異氰酸酯化合物作為交聯劑(f)之情形時,作為聚合物成分(a),較佳為使用含羥基之聚合物。於交聯劑(f)具有異氰酸酯基,聚合物成分(a)具有羥基之情形時,藉由交聯劑(f)與聚合物成分(a)之反應,而能夠於膜狀接著劑簡便地導入交聯結構。In the case of using an organic polyvalent isocyanate compound as the crosslinking agent (f), it is preferable to use a hydroxyl group-containing polymer as the polymer component (a). When the crosslinking agent (f) has an isocyanate group and the polymer component (a) has a hydroxyl group, the reaction between the crosslinking agent (f) and the polymer component (a) can be easily used in the film adhesive. Import cross-linked structures.
接著劑組成物及膜狀接著劑所含有之交聯劑(f)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些交聯劑(f)之組合及比率可任意選擇。The cross-linking agent (f) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these cross-linking agents (f) Can be arbitrarily selected.
於使用交聯劑(f)之情形時,於接著劑組成物中,相對於聚合物成分(a)之含量100質量份,交聯劑(f)之含量較佳為0.01質量份至20質量份,更佳為0.1質量份至10質量份,尤佳為0.3質量份至5質量份。藉由交聯劑(f)之前述含量為前述下限值以上,可更顯著地獲得藉由使用交聯劑(f)所得之效果。藉由交聯劑(f)之前述含量為前述上限值以下,則抑制交聯劑(f)之過量使用。於不含有交聯劑(f)之情形時,無需等待交聯反應,膜狀接著劑之性能容易更快地穩定。When the crosslinking agent (f) is used, in the adhesive composition, the content of the crosslinking agent (f) is preferably 0.01 to 20 parts by mass relative to 100 parts by mass of the content of the polymer component (a). parts, more preferably 0.1 to 10 parts by mass, particularly preferably 0.3 to 5 parts by mass. By making the said content of a crosslinking agent (f) more than the said lower limit, the effect obtained by using a crosslinking agent (f) can be acquired more remarkably. When the said content of a crosslinking agent (f) is below the said upper limit, the excess use of a crosslinking agent (f) is suppressed. When the cross-linking agent (f) is not contained, there is no need to wait for the cross-linking reaction, and the properties of the film-like adhesive are easily stabilized more quickly.
[能量線硬化性樹脂(g)] 藉由接著劑組成物及膜狀接著劑含有能量線硬化性樹脂(g),膜狀接著劑能夠藉由能量線之照射使膜狀接著劑的特性變化。[Energy beam curable resin (g)] Since the adhesive composition and the film-like adhesive contain the energy ray-curable resin (g), the film-like adhesive can change the properties of the film-like adhesive by irradiation of the energy ray.
能量線硬化性樹脂(g)係使能量線硬化性化合物進行聚合(硬化)而得。 作為前述能量線硬化性化合物,例如可列舉於分子內具有至少一個聚合性雙鍵之化合物,較佳為具有(甲基)丙烯醯基之丙烯酸酯系化合物。The energy ray curable resin (g) is obtained by polymerizing (hardening) an energy ray curable compound. As said energy-beam curable compound, the compound which has at least one polymerizable double bond in a molecule|numerator is mentioned, for example, Preferably it is an acrylate type compound which has a (meth)acryloyl group.
接著劑組成物所含有之能量線硬化性樹脂(g)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些能量線硬化性樹脂(g)之組合及比率可任意選擇。The energy ray-curable resin (g) contained in the adhesive composition may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these energy-ray-curable resins (g) may be Free to choose.
於使用能量線硬化性樹脂(g)之情形時,於接著劑組成物中,能量線硬化性樹脂(g)之含量相對於接著劑組成物之總質量的比率較佳為1質量%至95質量%,更佳為5質量%至90質量%,尤佳為10質量%至85質量%。In the case of using the energy ray curable resin (g), in the adhesive composition, the ratio of the content of the energy ray curable resin (g) to the total mass of the adhesive composition is preferably 1% by mass to 95% by mass. % by mass, more preferably 5% by mass to 90% by mass, particularly preferably 10% by mass to 85% by mass.
[光聚合起始劑(h)] 於接著劑組成物及膜狀接著劑含有能量線硬化性樹脂(g)之情形時,為了高效率地進行能量線硬化性樹脂(g)之聚合反應,亦可含有光聚合起始劑(h)。[Photopolymerization initiator (h)] When the adhesive composition and the film-like adhesive contain the energy ray curable resin (g), in order to efficiently carry out the polymerization reaction of the energy ray curable resin (g), a photopolymerization initiator (h) may be contained. ).
作為接著劑組成物中之光聚合起始劑(h),例如可列舉:安息香、安息香甲醚、安息香乙醚、安息香異丙醚、安息香異丁醚、安息香苯甲酸、安息香苯甲酸甲酯、安息香二甲基醚等安息香化合物;苯乙酮、2-羥基-2-甲基-1-苯基-丙烷-1-酮、2,2-二甲氧基-1,2-二苯基乙烷-1-酮等苯乙酮化合物;雙(2,4,6-三甲基苯甲醯基)苯基氧化膦、2,4,6-三甲基苯甲醯基二苯基氧化膦等醯基氧化膦化合物;苄基苯基硫醚、一硫化四甲基秋蘭姆等硫醚化合物;1-羥基環己基苯基酮等α-酮醇化合物;偶氮雙異丁腈等偶氮化合物;二茂鈦等二茂鈦化合物;噻噸酮等噻噸酮化合物;過氧化物化合物;二乙醯等二酮化合物;苯偶醯;二苯偶醯;二苯甲酮;2,4-二乙基噻噸酮;1,2-二苯基甲烷;2-羥基-2-甲基-1-[4-(1-甲基乙烯基)苯基]丙酮;1-氯蒽醌、2-氯蒽醌等醌化合物等。 另外,作為光聚合起始劑(h),例如亦可列舉胺等光增感劑等。Examples of the photopolymerization initiator (h) in the adhesive composition include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin Benzoin compounds such as dimethyl ether; acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, 2,2-dimethoxy-1,2-diphenylethane Acetophenone compounds such as -1-ketone; bis(2,4,6-trimethylbenzyl)phenylphosphine oxide, 2,4,6-trimethylbenzyldiphenylphosphine oxide, etc. Acyl phosphine oxide compounds; sulfide compounds such as benzyl phenyl sulfide and tetramethylthiuram monosulfide; α-keto alcohol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo bisisobutyronitrile and other azo compounds Compounds; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzoyl; dibenzoyl; benzophenone; 2,4 -Diethylthioxanthone; 1,2-Diphenylmethane; 2-Hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]acetone; 1-Chloranthraquinone, Quinone compounds such as 2-chloroanthraquinone, etc. Moreover, as a photoinitiator (h), photosensitizers, such as an amine, etc. are also mentioned, for example.
接著劑組成物所含有之光聚合起始劑(h)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些光聚合起始劑(h)之組合及比率可任意選擇。The photopolymerization initiator (h) contained in the adhesive composition may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these photopolymerization initiators (h) may be Free to choose.
於使用光聚合起始劑(h)之情形時,於接著劑組成物中,相對於能量線硬化性樹脂(g)之含量100質量份,光聚合起始劑(h)之含量較佳為0.1質量份至20質量份,更佳為1質量份至10質量份,尤佳為2質量份至5質量份。When the photopolymerization initiator (h) is used, in the adhesive composition, the content of the photopolymerization initiator (h) is preferably 100 parts by mass relative to the content of the energy ray-curable resin (g). 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, particularly preferably 2 to 5 parts by mass.
[通用添加劑(i)] 通用添加劑(i)亦可為公知者,可根據目的而任意選擇,並無特別限定,作為較佳者,例如可列舉:塑化劑、抗靜電劑、抗氧化劑、著色劑(染料、顏料)、收氣劑(gettering agent)等。[General Additives (i)] The general-purpose additive (i) may be a known one, and can be arbitrarily selected according to the purpose, and is not particularly limited. Preferred examples include plasticizers, antistatic agents, antioxidants, and colorants (dyes, pigments) , gettering agent, etc.
接著劑組成物及膜狀接著劑所含有之通用添加劑(i)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些通用添加劑(i)之組合及比率可任意選擇。 接著劑組成物及膜狀接著劑之含量並無特別限定,只要根據目的而適當選擇即可。The general-purpose additive (i) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these general-purpose additives (i) can be arbitrary choose. The content of the adhesive composition and the film-like adhesive is not particularly limited, and may be appropriately selected according to the purpose.
[溶媒] 接著劑組成物較佳為進而含有溶媒。含有溶媒之接著劑組成物係操作性變良好。 前述溶媒並無特別限定,作為較佳者,例如可列舉:甲苯、二甲苯等烴;甲醇、乙醇、2-丙醇、異丁醇(2-甲基丙烷-1-醇)、1-丁醇等醇;乙酸乙酯等酯;丙酮、甲基乙基酮等酮;四氫呋喃等醚;二甲基甲醯胺、N-甲基吡咯啶酮等醯胺(具有醯胺鍵之化合物)等。 接著劑組成物所含有之溶媒可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些溶媒之組合及比率可任意選擇。[solvent] The adhesive composition preferably further contains a solvent. The workability of the adhesive composition containing the solvent is improved. The aforementioned solvent is not particularly limited, and preferred examples include hydrocarbons such as toluene and xylene; methanol, ethanol, 2-propanol, isobutanol (2-methylpropan-1-ol), and 1-butane. Alcohols such as alcohols; Esters such as ethyl acetate; Ketones such as acetone and methyl ethyl ketone; Ethers such as tetrahydrofuran; . The solvent contained in the adhesive composition may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these vehicles can be arbitrarily selected.
就能夠將接著劑組成物中之含有成分更均勻地混合之方面而言,接著劑組成物所含有之溶媒較佳為甲基乙基酮等。The solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like, since the components contained in the adhesive composition can be mixed more uniformly.
接著劑組成物之溶媒之含量並無特別限定,例如只要根據溶媒以外之成分的種類而適當選擇即可。The content of the solvent in the adhesive composition is not particularly limited, and may be appropriately selected, for example, according to the types of components other than the solvent.
[接著劑組成物之製造方法] 接著劑組成物係藉由將用以構成該接著劑組成物之各成分加以調配而獲得。 接著劑組成物例如除了調配成分之種類不同的方面以外,可利用與上文所說明之黏著劑組成物之情形相同的方法製造。[Manufacturing method of adhesive composition] The adhesive composition is obtained by blending the components for constituting the adhesive composition. The adhesive composition can be produced by the same method as in the case of the adhesive composition described above, for example, except that the types of the ingredients are different.
○複合剝離膜 實施形態之複合剝離膜為將剝離膜、第二黏著劑層及支撐基材依序積層之積層體。實施形態之複合剝離膜係於使用貼附在貼附對象物的實施形態之半導體裝置製造用片時,自半導體裝置製造用片剝離。○Composite release film The composite release film of the embodiment is a laminate in which a release film, a second adhesive layer, and a support substrate are laminated in this order. The composite peeling film of the embodiment is peeled from the sheet for manufacturing a semiconductor device when using the sheet for manufacturing a semiconductor device of the embodiment that is attached to an object to be attached.
[剝離膜] 剝離膜之構成材料較佳為各種樹脂,可列舉前述基材中所例示者,較佳為聚對苯二甲酸乙二酯(PET)。[Release film] Various resins are preferable as the constituent material of the release film, and those exemplified in the aforementioned base material are mentioned, and polyethylene terephthalate (PET) is preferable.
剝離膜之厚度較佳為25μm以上,更佳為30μm以上,進而較佳為35μm以上。剝離膜之厚度之上限值例如較佳為125μm以下,更佳為100μm以下,進而較佳為50μm以下。 作為前述剝離膜之厚度之數值範圍之一例,例如可為25μm以上至125μm以下,可為30μm以上至100μm以下,亦可為35μm以上至50μm以下。 藉由剝離膜之厚度為前述下限值以上,而有將半導體製造用片捲成輥狀之情形時的防止捲印之效果優異之傾向。The thickness of the release film is preferably 25 μm or more, more preferably 30 μm or more, and still more preferably 35 μm or more. The upper limit value of the thickness of the peeling film is, for example, preferably 125 μm or less, more preferably 100 μm or less, and still more preferably 50 μm or less. As an example of the numerical range of the thickness of the said peeling film, it can be 25 micrometers or more and 125 micrometers or less, 30 micrometers or more and 100 micrometers or less, and 35 micrometers or more and 50 micrometers or less, for example. When the thickness of a peeling film is more than the said lower limit, when the sheet for semiconductor manufacturing is wound into a roll shape, it exists in the tendency to be excellent in the effect of preventing printing.
此處,所謂「剝離膜之厚度」,意指剝離膜整體之厚度,例如所謂由多層構成之剝離膜之厚度,意指構成剝離膜的所有層之合計厚度。Here, the "thickness of the release film" means the thickness of the whole release film, for example, the thickness of the release film composed of multiple layers means the total thickness of all layers constituting the release film.
剝離膜除了前述樹脂等主要之構成材料以外,亦可含有填充材、著色劑、抗靜電劑、抗氧化劑、有機潤滑劑、觸媒、軟化劑(塑化劑)等公知之各種添加劑。The release film may contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), etc., in addition to the main constituent materials such as the aforementioned resins.
剝離膜的與膜狀接著劑之接合面亦可利用表面剝離劑(例如聚矽氧系剝離劑等)進行處理。The bonding surface of the release film and the film-like adhesive may also be treated with a surface release agent (eg, a polysiloxane-based release agent).
前述剝離膜之拉伸彈性模數較佳為2GPa以上,較佳為2GPa至5GPa,更佳為2.5GPa至4GPa。藉由剝離膜之拉伸彈性模數為前述下限值以上,防止捲印之效果提高。藉由剝離膜之拉伸彈性模數為前述上限值以下,用作剝離膜之材料的選定變容易。The tensile modulus of elasticity of the aforementioned release film is preferably 2GPa or more, preferably 2GPa to 5GPa, more preferably 2.5GPa to 4GPa. When the tensile modulus of elasticity of the release film is equal to or more than the aforementioned lower limit value, the effect of preventing smearing increases. When the tensile modulus of elasticity of the release film is equal to or less than the aforementioned upper limit value, selection of a material for the release film becomes easy.
前述剝離膜之拉伸彈性模數係依據JIS K7161:1994及JIS K7127:1999並以下述條件測定而得。 試片:將剝離膜裁斷成15mm×140mm而得。 試驗環境:23℃、RH(Relative Humidity;相對濕度)50%。 方法:將前述試片於拉伸試驗機中設定為夾頭間距離100mm後,以200mm/min之速度拉伸試片,根據所得之應力-應變曲線求出彈性變形區域中之拉伸彈性模數(楊氏模數)。The tensile modulus of elasticity of the aforementioned release film is measured under the following conditions in accordance with JIS K7161:1994 and JIS K7127:1999. Test piece: obtained by cutting the release film into 15 mm×140 mm. Test environment: 23°C, RH (Relative Humidity; relative humidity) 50%. Method: After setting the above-mentioned test piece in the tensile testing machine to a distance of 100 mm between the chucks, the test piece was stretched at a speed of 200 mm/min, and the tensile elastic modulus in the elastic deformation region was obtained according to the obtained stress-strain curve. number (Young's modulus).
剝離膜之以拉伸彈性模數[N/mm2 ]×剝離膜之厚度[mm]表示之值較佳為180N/mm以上,較佳為180N/mm以上至625N/mm以下,更佳為200N/mm以上至500N/mm以下,進而較佳為210N/mm以上至300N/mm以下。藉由剝離膜之該值為前述下限值以上,防止捲印之效果提高。原因在於,成為可謂墊在底下之剝離膜變得越硬越厚,則不易留下捲印之作用越提高。藉由剝離膜之該值為前述上限值以下,用作剝離膜之材料的選定變容易。The value expressed by the tensile modulus of elasticity [N/mm 2 ]×the thickness of the release film [mm] of the release film is preferably 180 N/mm or more, preferably 180 N/mm or more and 625 N/mm or less, more preferably 200 N/mm or more and 500 N/mm or less, and more preferably 210 N/mm or more and 300 N/mm or less. When this value of a peeling film is more than the said lower limit value, the effect of preventing printing improves. The reason is that the harder and thicker the peeling film that can be said to be placed underneath becomes, the more the effect of being less likely to leave a print is improved. Selection of the material used as a peeling film becomes easy because this value of a peeling film is below the said upper limit.
再者,此處之拉伸彈性模數可與前述同樣地依據JIS K7161:1994及JIS K7127:1999而測定。單位能以Pa=N/m2 換算。In addition, the tensile elastic modulus here can be measured based on JISK7161:1994 and JISK7127:1999 similarly to the above. The unit can be converted by Pa=N/m 2 .
[第二黏著劑層] 第二黏著劑層之構成及構成材料可列舉前述第一黏著劑層中經說明之構成及構成材料,省略有關第二黏著劑層之構成及構成材料的詳細說明。 第二黏著劑層之厚度或形狀等構成與第一黏著劑層之構成可彼此相同亦可不同。第二黏著劑層之構成材料與第一黏著劑層之構成材料可彼此相同亦可不同。[Second Adhesive Layer] The constitution and constituent materials of the second adhesive layer can include the constitutions and constituent materials described in the aforementioned first adhesive layer, and the detailed description of the constitution and constituent materials of the second adhesive layer is omitted. The thickness or shape of the second adhesive layer and the constitution of the first adhesive layer may be the same or different from each other. The constituent material of the second adhesive layer and the constituent material of the first adhesive layer may be the same or different from each other.
第二黏著劑層可由一層(單層)構成,亦可由兩層以上之多層構成,於由多層構成之情形時,這些多層可彼此相同亦可不同,這些多層之組合並無特別限定。The second adhesive layer may be composed of one layer (single layer), or may be composed of two or more layers. When composed of multiple layers, these layers may be the same or different from each other, and the combination of these layers is not particularly limited.
第二黏著劑層之厚度較佳為2μm以上,更佳為5μm以上,進而較佳為10μm以上。第二黏著劑層之厚度之上限值例如較佳為100μm以下,更佳為60μm以下,進而較佳為30μm以下。 作為第二黏著劑層之厚度之數值範圍之一例,例如可為2μm至100μm,可為5μm至60μm,可為10μm至30μm。 藉由第二黏著劑層之厚度為前述下限值以上,可提高緩衝之作用,在將半導體製造用片捲成輥狀之情形時,有著防止捲印之效果優異之傾向。The thickness of the second adhesive layer is preferably 2 μm or more, more preferably 5 μm or more, and still more preferably 10 μm or more. The upper limit of the thickness of the second adhesive layer is, for example, preferably 100 μm or less, more preferably 60 μm or less, and still more preferably 30 μm or less. As an example of the numerical range of the thickness of the second adhesive layer, for example, it may be 2 μm to 100 μm, 5 μm to 60 μm, and 10 μm to 30 μm. When the thickness of the second adhesive layer is equal to or greater than the aforementioned lower limit value, the buffering effect can be enhanced, and when the sheet for semiconductor manufacturing is wound into a roll shape, there is a tendency that the effect of preventing roll printing is excellent.
此處,所謂「第二黏著劑層之厚度」,意指第二黏著劑層整體之厚度,例如所謂由多層構成之第二黏著劑層之厚度,意指構成第二黏著劑層的所有層之合計厚度。Here, the so-called "thickness of the second adhesive layer" refers to the thickness of the entire second adhesive layer, for example, the thickness of the second adhesive layer composed of multiple layers refers to all the layers constituting the second adhesive layer total thickness.
[支撐基材] 支撐基材之構成及構成材料可列舉前述剝離膜中經說明之構成及構成材料,省略有關支撐基材之構成及構成材料之詳細說明。 支撐基材之厚度或形狀等構成與剝離膜之構成可彼此相同亦可不同。支撐基材之構成材料與剝離膜之構成材料可彼此相同亦可不同。[Support Substrate] The constitution and constituent material of the supporting base material include the constitution and constituent material described in the aforementioned release film, and the detailed description of the constitution and constituent material of the supporting base material is omitted. The thickness, shape, etc. of the support substrate and the release film may be the same or different from each other. The constituent material of the support substrate and the constituent material of the release film may be the same or different from each other.
支撐基材之厚度較佳為12μm以上,更佳為15μm以上,進而較佳為20μm以上。支撐基材之厚度之上限值例如較佳為125μm以下,更佳為100μm以下,進而較佳為50μm以下。 作為前述支撐基材之厚度之數值範圍之一例,例如可為12μm以上至125μm以下,可為15μm以上至100μm以下,亦可為20μm以上至50μm以下。 藉由支撐基材之厚度為前述下限值以上,有防止複合剝離膜斷裂之效果優異之傾向。The thickness of the support substrate is preferably 12 μm or more, more preferably 15 μm or more, and still more preferably 20 μm or more. The upper limit of the thickness of the support substrate is, for example, preferably 125 μm or less, more preferably 100 μm or less, and still more preferably 50 μm or less. As an example of the numerical range of the thickness of the support substrate, for example, it may be 12 μm or more and 125 μm or less, 15 μm or more and 100 μm or less, or 20 μm or more and 50 μm or less. When the thickness of a support base material is more than the said lower limit, there exists a tendency for the effect of preventing a composite release film to be excellent in fracture|rupture.
此處,所謂「支撐基材之厚度」,意指支撐基材整體之厚度,例如所謂由多層構成之支撐基材之厚度,意指構成支撐基材的所有層之合計厚度。Here, the "thickness of the supporting substrate" means the thickness of the entire supporting substrate, for example, the thickness of the supporting substrate composed of multiple layers means the total thickness of all layers constituting the supporting substrate.
實施形態之複合剝離膜之厚度係超過38μm,較佳為50μm以上,更佳為65μm以上。複合剝離膜之厚度之上限值例如較佳為350μm以下,更佳為260μm以下,進而較佳為130μm以下。 作為前述複合剝離膜之厚度之數值範圍之一例,例如可為超過38μm至350μm以下,可為50μm以上至260μm以下,亦可為65μm以上至130μm以下。The thickness of the composite release film of the embodiment is more than 38 μm, preferably 50 μm or more, and more preferably 65 μm or more. The upper limit of the thickness of the composite release film is, for example, preferably 350 μm or less, more preferably 260 μm or less, and still more preferably 130 μm or less. As an example of the numerical range of the thickness of the said composite release film, it may be more than 38 μm to 350 μm or less, 50 μm or more to 260 μm or less, or 65 μm or more to 130 μm or less.
於複合剝離膜僅由只有剝離膜、第二黏著劑層及支撐基材依序積層之構成所構成之情形時,所謂前述複合剝離膜之厚度,亦即可為剝離膜、第二黏著劑層及支撐基材之總厚。In the case where the composite release film is composed of only the release film, the second adhesive layer and the supporting substrate layered in sequence, the so-called thickness of the composite release film can be the release film and the second adhesive layer. and the total thickness of the supporting substrate.
藉由複合剝離膜之厚度為前述下限值以上,有效地抑制將半導體裝置製造用片捲成輥狀之情形時的前述捲印之產生。藉由複合剝離膜之厚度為前述上限值以下,將半導體裝置製造用片捲成輥狀之情形時的開始捲繞之段差不會變得過高,防止產生由開始捲繞部分的半導體裝置製造用片之總厚所引起的芯部痕。另外,藉由複合剝離膜之厚度為前述上限值以下,於剝離複合剝離膜時,能夠增大使複合剝離膜彎曲的彎曲程度,將剝離複合剝離膜而露出之膜狀接著劑的露出面貼附於成為使用對象之半導體晶圓等的操作變容易。When the thickness of a composite release film is more than the said lower limit, generation|occurence|production of the said printing when the sheet for semiconductor device manufacture is wound into a roll shape can be suppressed effectively. When the thickness of the composite release film is below the above-mentioned upper limit value, when the sheet for semiconductor device manufacturing is wound into a roll shape, the step at the start of winding does not become too high, and the occurrence of semiconductor devices at the start of winding is prevented. Core marks caused by the total thickness of the manufacturing sheet. In addition, when the thickness of the composite release film is equal to or less than the above-mentioned upper limit value, when the composite release film is peeled off, the degree of bending that bends the composite release film can be increased, and the exposed surface of the film-like adhesive exposed by peeling the composite release film can be attached. The operation of attaching to the semiconductor wafer to be used, etc. becomes easy.
◇輥體 作為本發明之半導體裝置製造用片之一實施形態,提供一種輥體,該輥體係於長條狀之複合剝離膜上積層實施形態之半導體裝置製造用片之基材、第一黏著劑層及膜狀接著劑,並以前述基材、前述第一黏著劑層及前述膜狀接著劑作為內側捲成輥而成。◇Roller body As one embodiment of the sheet for manufacturing a semiconductor device of the present invention, there is provided a roll body in which a substrate, a first adhesive layer, and The film-like adhesive is wound into a roll with the base material, the first adhesive layer, and the film-like adhesive serving as inner sides.
實施形態之半導體裝置製造用片亦可於前述第一黏著劑層與前述膜狀接著劑之間積層有中間層。 作為本發明之半導體裝置製造用片之一實施形態,提供一種輥體,該輥體係於長條狀之複合剝離膜上積層實施形態之半導體裝置製造用片之基材、第一黏著劑層、中間層及膜狀接著劑,並以前述基材、前述第一黏著劑層、前述中間層及前述膜狀接著劑作為內側捲成輥而成。 所謂「作為內側」,意指朝向輥體的中心側(芯部側)。In the sheet for semiconductor device manufacture of the embodiment, an intermediate layer may be laminated between the first adhesive layer and the film-like adhesive. As an embodiment of the sheet for manufacturing a semiconductor device of the present invention, there is provided a roll body in which a base material, a first adhesive layer, The intermediate layer and the film-like adhesive are wound into a roll using the base material, the first adhesive layer, the intermediate layer, and the film-like adhesive as inner sides. "As the inner side" means toward the center side (core side) of the roll body.
圖6為示意性地表示本發明之一實施形態之輥體的剖面圖,表示鬆開輥體而將輥體的一部分展開之狀態。輥體110係將包含基材11、第一黏著劑層12、中間層13及膜狀接著劑14之單元P以2單元以上積層於複合剝離膜20上,以單元P的積層有基材11之側朝向輥體的中心側(芯部側)之方式,以單元P作為內側捲成輥。輥捲繞之方向為長條狀之複合剝離膜20之長邊方向。輥體之捲繞數並無特別限定,較佳為以半導體裝置製造用片的至少一部分重疊於前述單元P上之方式,捲繞超過一圈。6 is a cross-sectional view schematically showing a roll body according to an embodiment of the present invention, and shows a state in which the roll body is loosened and a part of the roll body is unfolded. The
所謂前述半導體裝置製造用片的1單元,可為包含用於貼附一次或一個貼附對象物的膜狀接著劑之部分。圖6中,每個單元P包含一個圓形之膜狀接著劑14,單元P為2單元以上連續地以預定之間隔配置。一個輥體中,各單元P所含之構成彼此可相互加工成相同形狀。作為較佳形狀,係圓形之支撐片1、與較支撐片1更為小徑的圓形之中間層13及膜狀接著劑14積層為同心圓狀。One unit of the above-mentioned sheet for manufacturing a semiconductor device may be a portion containing a film-like adhesive for sticking once or one sticking object. In FIG. 6, each unit P includes a circular film-shaped
膜狀接著劑14係能夠容易地貼附於半導體晶圓等(貼附對象物),且具有附著性,故而藉由設為膜狀接著劑14被夾在複合剝離膜20與支撐片1之間的構成,而適於以輥狀進行保管。
輥體亦適合作為半導體裝置製造用片之流通形態。The film-
輥體例如可藉由將長條狀之複合剝離膜、基材、第一黏著劑層、中間層及膜狀接著劑以成為對應之位置關係之方式加以積層而製造。A roll body can be manufactured by laminating|stacking a long composite release film, a base material, a 1st adhesive bond layer, an intermediate layer, and a film adhesive agent so that a positional relationship may correspond, for example.
◇半導體裝置製造用片之製造方法 前述半導體裝置製造用片係可將上述各層以成為對應之位置關係之方式加以積層而製造。各層之形成方法如上文中所說明。◇Manufacturing method of sheet for semiconductor device manufacturing The said sheet for semiconductor device manufacture can be manufactured by laminating|stacking the said each layer so that a positional relationship may correspond. The method of forming each layer is as described above.
前述半導體裝置製造用片例如可藉由下述方式製造:分別預先準備基材、第一黏著劑層、中間層、膜狀接著劑、剝離膜、第二黏著劑層及支撐基材,並將這些層以成為基材、第一黏著劑層、中間層、膜狀接著劑、剝離膜、第二黏著劑層及支撐基材之順序之方式加以貼合而積層。 然而,該方法為半導體裝置製造用片之製造方法之一例。The aforementioned sheet for manufacturing a semiconductor device can be manufactured, for example, by preparing a substrate, a first adhesive layer, an intermediate layer, a film-like adhesive, a release film, a second adhesive layer, and a supporting substrate in advance, and These layers are laminated together in order to form a base material, a first adhesive layer, an intermediate layer, a film-like adhesive, a release film, a second adhesive layer, and a supporting base material. However, this method is an example of a method of manufacturing a sheet for semiconductor device manufacturing.
另外,前述半導體裝置製造用片亦可藉由下述方式製造:預先製作用以構成該半導體裝置製造用片的將多個層積層而構成的兩種以上之中間積層體,並將這些中間積層體彼此加以貼合。中間積層體之構成可適當地任意選擇。例如,可預先製作具有將基材及第一黏著劑層積層之構成的第一中間積層體;以及具有將中間層、膜狀接著劑、剝離膜、第二黏著劑層及支撐基材依序積層之構成的第二中間積層體,並藉由將第一中間積層體中的第一黏著劑層與第二中間積層體中的中間層加以貼合來製造半導體裝置製造用片。然而,該製造方法為一例。In addition, the above-mentioned sheet for manufacturing a semiconductor device may be manufactured by preliminarily preparing two or more types of intermediate laminates which are formed by laminating a plurality of layers to constitute the sheet for manufacturing a semiconductor device, and then laminating these intermediate layers. bodies are attached to each other. The configuration of the intermediate layered body can be arbitrarily selected as appropriate. For example, a first intermediate layered body having a structure in which a base material and a first adhesive layer are laminated; The second intermediate layered body of the laminated structure is manufactured by laminating the first adhesive layer in the first intermediate layered body and the intermediate layer in the second intermediate layered body to manufacture a semiconductor device manufacturing sheet. However, this manufacturing method is an example.
作為實施形態之半導體裝置製造用片之製造方法,可例示以下方法。 一種半導體裝置製造用片之製造方法,係包含:將前述基材及前述第一黏著劑層加以積層,獲得第一中間積層體;將前述膜狀接著劑、前述剝離膜、前述第二黏著劑層及前述支撐基材依序加以積層,獲得第二中間積層體;以及將前述第一中間積層體與前述第二中間積層體加以貼合。As a manufacturing method of the sheet|seat for semiconductor device manufacture which concerns on embodiment, the following method can be illustrated. A method for producing a sheet for manufacturing a semiconductor device, comprising: laminating the base material and the first adhesive layer to obtain a first intermediate laminate; and laminating the film adhesive, the release film, and the second adhesive The layers and the supporting substrate are sequentially laminated to obtain a second intermediate laminate; and the first intermediate laminate and the second intermediate laminate are bonded together.
於實施形態之半導體裝置製造用片在前述第一黏著劑層與前述膜狀接著劑之間積層有中間層之情形時,作為實施形態之半導體裝置製造用片之製造方法,可例示以下方法。 實施形態之半導體裝置製造用片之製造方法,係包含:將前述基材及前述第一黏著劑層加以積層,獲得第一中間積層體;將前述中間層、前述膜狀接著劑、前述剝離膜、前述第二黏著劑層及前述支撐基材依序加以積層,獲得第二中間積層體;以及將前述第一中間積層體的前述第一黏著劑層與前述第二中間積層體的中間層加以貼合。When the sheet for manufacturing a semiconductor device of the embodiment has an intermediate layer laminated between the first adhesive layer and the film-like adhesive, the following method can be exemplified as a method of manufacturing the sheet for manufacturing a semiconductor device of the embodiment. A method of manufacturing a sheet for manufacturing a semiconductor device according to an embodiment includes laminating the base material and the first adhesive layer to obtain a first intermediate laminate, and laminating the intermediate layer, the film-like adhesive, and the release film. , the second adhesive layer and the supporting substrate are laminated in sequence to obtain a second intermediate laminate; and the first adhesive layer of the first intermediate laminate and the intermediate layer of the second intermediate laminate are laminated fit.
前述實施形態之半導體裝置製造用片之製造方法亦可進而包含:自積層有前述膜狀接著劑之側之面,切入前述複合剝離膜或剝離膜,於前述複合剝離膜形成切口部。前述切口部之切口深度較佳為超過25μm。The manufacturing method of the sheet|seat for semiconductor device manufacture of the said embodiment may further comprise cutting into the said composite release film or a release film from the surface on which the said film adhesive agent was laminated|stacked, and forming a notch part in the said composite release film. It is preferable that the incision depth of the said incision part exceeds 25 micrometers.
於前述第二中間積層體中,對膜狀接著劑及中間層進行衝壓加工之情形時,可於剝離膜上積層膜狀接著劑及中間層,於依序積層有剝離膜、膜狀接著劑及中間層之積層體的剝離膜的露出面,貼附積層有支撐基材及第二黏著劑層之積層體的第二黏著劑層的露出面來形成複合剝離膜,自積層有膜狀接著劑之側之面進行膜狀接著劑及中間層之衝壓加工。此時,藉由以膜狀接著劑及中間層之總厚以上之深度進行切入,而將膜狀接著劑及中間層切斷為所需之形狀,亦於複合剝離膜形成切口部。In the above-mentioned second intermediate layered body, when the film adhesive and the intermediate layer are pressed, the film adhesive and the intermediate layer can be laminated on the release film, and the release film and the film adhesive can be laminated in this order. And the exposed surface of the release film of the laminated body of the intermediate layer is attached to the exposed surface of the second adhesive layer of the laminated body of the supporting base material and the second adhesive layer to form a composite release film, and the self-lamination has a film-like adhesive The side surface of the agent is subjected to the stamping process of the film adhesive and the intermediate layer. At this time, the film-like adhesive and the intermediate layer are cut into a desired shape by cutting the film-like adhesive and the intermediate layer to a depth greater than the total thickness of the intermediate layer, and a cut portion is also formed in the composite release film.
或者,於前述第二中間積層體中,對膜狀接著劑及中間層進行衝壓加工之情形時,可於剝離膜上積層膜狀接著劑及中間層,自積層有膜狀接著劑之側之面進行膜狀接著劑及中間層之衝壓加工後,於依序積層有剝離膜、膜狀接著劑及中間層之積層體的剝離膜之露出面,貼附積層有支撐基材及第二黏著劑層之積層體的第二黏著劑層的露出面來形成複合剝離膜。此時,藉由以膜狀接著劑及中間層之總厚以上之深度進行切入,而將膜狀接著劑及中間層切斷為所需之形狀,亦於剝離膜形成切口部。Alternatively, when the film adhesive and the intermediate layer are pressed in the second intermediate laminate, the film adhesive and the intermediate layer may be laminated on the release film from the side on which the film adhesive is laminated. After the film adhesive and the intermediate layer are stamped on the surface, on the exposed surface of the release film laminated with the release film, the film adhesive and the intermediate layer in sequence, the laminated support substrate and the second adhesive are attached. A composite release film is formed on the exposed surface of the second adhesive layer of the laminate of the adhesive layers. At this time, the film-like adhesive and the intermediate layer are cut into a desired shape by cutting the film-like adhesive and the intermediate layer to a depth greater than or equal to the total thickness of the intermediate layer, and a cut portion is also formed in the release film.
或者,於前述第二中間積層體中,對膜狀接著劑及中間層進行衝壓加工之情形時,亦可將積層於剝離膜上之膜狀接著劑、與積層於其他剝離膜上之中間層分別進行衝壓加工後,將經衝壓加工之膜狀接著劑及中間層彼此加以貼合而積層,獲得第二中間積層體。於經衝壓加工之各剝離膜,與前述情形同樣地形成有切口部,但接觸中間層之剝離膜係於與第一中間積層體貼合時被去除。Alternatively, when the film adhesive and the intermediate layer are pressed in the second intermediate layered body, the film adhesive laminated on the release film and the intermediate layer laminated on the other release film may be used together. After each press-processing, the press-processed film adhesive and the intermediate layer are bonded to each other and laminated to obtain a second intermediate laminate. In each press-processed release film, a notch portion is formed in the same manner as in the above-mentioned case, but the release film in contact with the intermediate layer is removed when it is attached to the first intermediate layered body.
以此方式,於剝離膜形成切口部之加工對象可例示:1)複合剝離膜或剝離膜、及膜狀接著劑之積層體;或者,2)複合剝離膜或剝離膜、膜狀接著劑及中間層之積層體(例如第二中間積層體)。 關於經衝壓加工之膜狀接著劑及中間層之無用部分,可於與第一中間積層體進行貼合之前適當去除。In this way, the object to be processed to form the cut portion in the release film can be exemplified: 1) a laminate of a composite release film or a release film and a film-like adhesive; or 2) a composite release film or a release film, a film-like adhesive, and A laminated body of an intermediate layer (eg, a second intermediate laminated body). The useless parts of the press-processed film adhesive and the intermediate layer can be appropriately removed before lamination with the first intermediate layered body.
經衝壓加工之膜狀接著劑及中間層之形狀可列舉前述中間層及膜狀接著劑中說明之形狀。該形狀可設為與能作為膜狀接著劑之貼附對象的晶圓等之形狀對應。As the shape of the film-like adhesive and the intermediate layer subjected to the stamping process, the shapes described above for the intermediate layer and the film-like adhesive can be exemplified. The shape can be set to correspond to the shape of a wafer or the like to which the film-like adhesive can be attached.
此處,形成於複合剝離膜之切口部之切口深度較佳為超過25μm,作為較佳數值,可列舉前述所例示之數值。 實施形態之半導體裝置製造用片之製造方法中,藉由將前述切口深度設為超過25μm,即便用於衝壓加工之刀已經磨損,仍可防止膜狀接著劑、或者膜狀接著劑及中間層之衝壓變得不完全。Here, it is preferable that the depth of the incision formed in the incision part of a composite peeling film exceeds 25 micrometers, and the numerical value exemplified above can be mentioned as a preferable numerical value. In the manufacturing method of the sheet for semiconductor device manufacturing according to the embodiment, by setting the depth of the incision to be more than 25 μm, even if the blade used for the punching is worn out, the film adhesive, or the film adhesive and the intermediate layer can be prevented. The punching becomes incomplete.
進而,可將第一中間積層體與第二中間積層體加以貼合後,自積層有基材側之面進行前述基材及前述第一黏著劑層之衝壓加工。此時,藉由以基材及第一黏著劑層之總厚以上之深度進行切入,而將基材及第一黏著劑層切斷為所需之形狀。該形狀可設為與能作為第一黏著劑層之貼附對象的環形框架形狀對應。 此時,能以不將中間層、膜狀接著劑及複合剝離膜切斷之方式適當調整切口深度。或者,藉由在較中間層及膜狀接著劑之俯視形狀之外周更靠外側之位置進行基材及第一黏著劑層之切入,亦不將中間層及膜狀接著劑切斷。 於膜狀接著劑及中間層之形狀為圓形之情形時,基材及第一黏著劑層之衝壓加工位置較佳為與圓形之膜狀接著劑及中間層成為同心圓,且較膜狀接著劑及中間層之俯視形狀之外周更靠外側。Furthermore, after the 1st intermediate laminated body and the 2nd intermediate laminated body are laminated|stacked, the press process of the said base material and the said 1st adhesive bond layer may be performed from the surface which laminated|stacked the base material side. At this time, the base material and the first pressure-sensitive adhesive layer are cut into a desired shape by cutting at a depth greater than the total thickness of the base material and the first pressure-sensitive adhesive layer. The shape can be set to correspond to the shape of the annular frame to which the first adhesive layer can be attached. In this case, the depth of the incision can be appropriately adjusted so as not to cut the intermediate layer, the film-like adhesive, and the composite release film. Alternatively, the intermediate layer and the film-like adhesive are not cut by cutting the base material and the first adhesive layer at a position outside the outer periphery of the plan-view shape of the intermediate layer and the film-like adhesive. When the shapes of the film adhesive and the intermediate layer are circular, the punching positions of the base material and the first adhesive layer are preferably concentric with the circular film adhesive and the intermediate layer, and are closer to the film. The outer periphery of the plan view shape of the adhesive agent and the intermediate layer is further to the outer side.
具備基材、第一黏著劑層、中間層、膜狀接著劑、剝離膜、第二黏著劑層及支撐基材以外之其他層的半導體裝置製造用片可藉由於上述製造方法中,以適當之時序追加進行形成該其他層並積層之步驟來製造。The sheet for semiconductor device manufacturing including the substrate, the first adhesive layer, the intermediate layer, the film adhesive, the release film, the second adhesive layer, and the layers other than the supporting substrate can be produced by the above-mentioned manufacturing method with an appropriate method. It is manufactured by adding the steps of forming and laminating the other layers in the timing sequence.
◇半導體裝置製造用片之使用方法(具膜狀接著劑之半導體晶片之製造方法) 前述半導體裝置製造用片係可於半導體裝置之製造過程中,於製造具膜狀接著劑之半導體晶片時使用。 以下,一邊參照圖式,一邊針對前述半導體裝置製造用片之使用方法(具膜狀接著劑之半導體晶片之製造方法)加以詳細說明。◇How to use a sheet for semiconductor device manufacturing (a method of manufacturing a semiconductor wafer with a film-like adhesive) The above-mentioned sheet for manufacturing a semiconductor device can be used in the manufacture of a semiconductor wafer with a film-like adhesive in the manufacturing process of a semiconductor device. Hereinafter, the usage method of the sheet for semiconductor device manufacturing (the manufacturing method of the semiconductor wafer with a film-like adhesive agent) is demonstrated in detail, referring drawings.
圖7係用以示意性地說明作為半導體裝置製造用片之使用對象的半導體晶片之製造方法的剖面圖。圖8係用以示意性地說明前述半導體裝置製造用片之使用方法的剖面圖。此處,列舉圖2所示之半導體裝置製造用片101為例,針對該半導體裝置製造用片101之使用方法加以說明。
以下,針對將複合剝離膜20剝離後之半導體裝置製造用片,亦有記載為半導體製造用片之處。FIG. 7 is a cross-sectional view schematically illustrating a method of manufacturing a semiconductor wafer, which is used as a sheet for manufacturing a semiconductor device. FIG. 8 is a cross-sectional view schematically illustrating a method of using the aforementioned semiconductor device manufacturing sheet. Here, a method of using the
首先,於使用半導體裝置製造用片101之前,如圖7A所示,準備半導體晶圓9’,於該半導體晶圓9’之電路形成面9a’貼附背面研磨帶8。First, before using the
繼而,以聚焦在設定於半導體晶圓9’的內部之焦點之方式照射雷射光(圖示省略),藉此如圖7B所示,於半導體晶圓9’的內部形成改質層90’。
前述雷射光較佳為自半導體晶圓9’的內面9b’側照射於半導體晶圓9’。Next, laser light (not shown) is irradiated so as to be focused on a focal point set inside the semiconductor wafer 9', thereby forming a modified layer 90' inside the semiconductor wafer 9' as shown in FIG. 7B .
The aforementioned laser light is preferably irradiated to the semiconductor wafer 9' from the
此時之焦點的位置為半導體晶圓9’之分割(切割)預定位置,以由半導體晶圓9’獲得目標大小、形狀及個數之半導體晶片之方式設定。The position of the focal point at this time is the predetermined dividing (dicing) position of the semiconductor wafer 9', and is set so that the semiconductor wafers of the desired size, shape and number are obtained from the semiconductor wafer 9'.
繼而,使用研磨機(圖示省略)磨削半導體晶圓9’之內面9b’。藉此,將半導體晶圓9’之厚度調節為目標值,並且利用此時施加於半導體晶圓9’之磨削時之力,藉此於改質層90’的形成部位分割半導體晶圓9’,如圖7C所示般製作多個半導體晶片9。
圖7中,符號9a表示半導體晶片9之電路形成面,對應於半導體晶圓9’之電路形成面9a’。另外,符號9b表示半導體晶片9之內面,對應於半導體晶圓9’磨削後之內面9b’。Next, the
藉由以上操作,獲得作為半導體裝置製造用片101之使用對象之半導體晶片9。更具體而言,藉由本步驟,獲得於背面研磨帶8上整齊排列地固定有多個半導體晶片9之狀態之半導體晶片群901。By the above operation, the
繼而,使用前述所得之半導體晶片9(半導體晶片群901),製造具膜狀接著劑之半導體晶片。
首先,如圖8A所示,一邊將去掉複合剝離膜20之狀態的一片半導體裝置製造用片101加熱,一邊將該半導體裝置製造用片101中之膜狀接著劑14貼附於半導體晶片群901中之所有半導體晶片9的內面9b。再者,此時之膜狀接著劑14之貼附對象亦可為未完全分割之半導體晶圓。Next, using the semiconductor wafer 9 (semiconductor wafer group 901) obtained above, a semiconductor wafer with a film-like adhesive is produced.
First, as shown in FIG. 8A , the film adhesive 14 in the semiconductor
繼而,自該固定狀態之半導體晶片群去掉背面研磨帶8。然後,如圖8B所示,將半導體裝置製造用片101一邊加以冷卻,一邊沿相對於該半導體裝置製造用片101的表面(例如第一黏著劑層12的第一面12a)為平行之方向伸展,藉此擴展。此處,以箭頭E1
表示半導體裝置製造用片101之擴展方向。藉由以此方式進行擴展,沿著半導體晶片9的外周切斷膜狀接著劑14。Then, the
藉由本步驟,可獲得具膜狀接著劑之半導體晶片群910,該具膜狀接著劑之半導體晶片群910為於中間層13上整齊排列地固定有多個具膜狀接著劑之半導體晶片914之狀態,該多個具膜狀接著劑之半導體晶片914具備半導體晶片9、及設置於該半導體晶片9的內面9b之切斷後的膜狀接著劑140。Through this step, a
如上文所說明,半導體晶圓9’之分割時,於半導體晶圓9’之一部分區域中未分割為半導體晶片9之情形時,藉由進行本步驟,該區域被分割為半導體晶片。As described above, when the semiconductor wafer 9' is divided, when a part of the semiconductor wafer 9' is not divided into the
半導體裝置製造用片101較佳為將該半導體裝置製造用片101的溫度設為-5℃至5℃進行擴展。將半導體裝置製造用片101以此方式加以冷卻而進行擴展(進行冷擴展),藉此能夠更容易且高精度地切斷膜狀接著劑14。半導體裝置製造用片101之擴展可利用公知方法進行。As for the
在本步驟中,藉由半導體裝置製造用片101具備中間層13,將膜狀接著劑14於目標處高精度地切斷,能夠抑制切斷不良。In this step, since the
切斷膜狀接著劑14後,如圖8C所示,將具膜狀接著劑之半導體晶片914自積層片10中的中間層13扯離並拾取。具膜狀接著劑之半導體晶片914可利用公知方法拾取。例如,可藉由半導體裝置之製造裝置的上拉部7進行拾取。以此方式,可製造具膜狀接著劑之半導體晶片914。
[實施例]After the film-
繼而顯示實施例來對本發明加以更詳細說明,但本發明不限定於以下之實施例。Next, the present invention will be described in more detail by showing examples, but the present invention is not limited to the following examples.
[接著劑組成物之製造原料]
將用於製造接著劑組成物之原料顯示於以下。
[聚合物成分(a)]
(a)-1:將丙烯酸甲酯(95質量份)及丙烯酸-2-羥基乙酯(5質量份)加以共聚而成之丙烯酸系樹脂(重量平均分子量800000,玻璃轉移溫度9℃)。
[環氧樹脂(b1)]
(b1)-1:加成有丙烯醯基之甲酚酚醛清漆型環氧樹脂(日本化藥公司製造之「CNA147」,環氧當量518g/eq,數量平均分子量2100,不飽和基含量係與環氧基等量)。
[熱硬化劑(b2)]
(b2)-1:芳烷基型酚樹脂(三井化學公司製造之「Milex XLC-4L」,數量平均分子量1100,軟化點63℃)。
[填充材(d)]
(d)-1:球狀二氧化矽(Admatechs公司製造之「YA050C-MJE」,平均粒徑50nm,甲基丙烯酸矽烷處理品)。
[偶合劑(e)]
(e)-1:矽烷偶合劑,3-縮水甘油氧基丙基甲基二乙氧基矽烷(信越聚矽氧公司製造之「KBE-402」)。
[交聯劑(f)]
(f)-1:甲苯二異氰酸酯系交聯劑(東曹(Tosoh)公司製造之「Coronate L」)[Manufacturing raw materials of adhesive composition]
The raw materials for producing the adhesive composition are shown below.
[Polymer component (a)]
(a)-1: An acrylic resin (weight average molecular weight 800000,
[實施例1]
[半導體裝置製造用片之製造]
[基材之製作]
使用擠出機,使低密度聚乙烯(LDPE,住友化學公司製造之「Sumikathene L705」)熔融,藉由T字模法擠出熔融物,使用冷卻輥將擠出物於雙軸加以延伸,藉此獲得LDPE製之基材(厚度110μm)。[Example 1]
[Manufacture of Sheets for Semiconductor Device Manufacturing]
[Fabrication of base material]
Using an extruder, low-density polyethylene (LDPE, "Sumikathene L705" manufactured by Sumitomo Chemical Co., Ltd.) was melted, the melt was extruded by the T-die method, and the extrudate was biaxially stretched using a cooling roll. A base material made of LDPE (
[支撐片之製作]
製造非能量線硬化性之黏著劑組成物,該非能量線硬化性之黏著劑組成物含有作為黏著性樹脂之丙烯酸系樹脂(東洋化學(Toyo-Chem)公司製造之「Oribain BPS 6367X」)(100質量份)、及交聯劑(東洋化學(Toyo-Chem)公司製造之「BXX 5640」)(1質量份)。
繼而,使用聚對苯二甲酸乙二酯製膜的單面經聚矽氧處理進行了剝離處理之剝離膜(琳得科(Lintec)製造之SP-PET381031,38μm),於前述剝離處理面塗敷前述所得之黏著劑組成物,於100℃加熱乾燥2分鐘,藉此製作非能量線硬化性之第一黏著劑層(厚度10μm)。
繼而,於第一黏著劑層的露出面貼合前述所得之基材,由此獲得支撐片。[Production of Support Sheet]
Manufacture of a non-energy ray-curable adhesive composition containing an acrylic resin as an adhesive resin (“Oribain BPS 6367X” manufactured by Toyo-Chem) (100 parts by mass), and a crosslinking agent (“BXX 5640” manufactured by Toyo-Chem Co., Ltd.) (1 part by mass).
Next, a release film (SP-PET381031, 38 μm, manufactured by Lintec), whose one side was subjected to polysiloxane treatment and peeled off, made of polyethylene terephthalate, was top-coated with the aforementioned peeling treatment. The adhesive composition obtained above was applied, and heated and dried at 100° C. for 2 minutes, thereby producing a non-energy ray-curable first adhesive layer (
[中間層之製作] 使用擠出機,使乙烯乙酸乙烯酯共聚物(EVA,東曹(Tosoh)公司製造之「Ultrathene 636」)熔融,藉由T字模法擠出熔融物,使用冷卻輥將擠出物於雙軸加以延伸,獲得EVA製之中間層(厚度80μm)。[The production of the middle layer] Using an extruder, ethylene vinyl acetate copolymer (EVA, "Ultrathene 636" manufactured by Tosoh Corporation) was melted, the melt was extruded by the T-die method, and the extrudate was biaxially spun using a cooling roll. It was stretched to obtain an intermediate layer (80 μm in thickness) made of EVA.
[膜狀接著劑之製作] 製造熱硬化性之接著劑組成物,該熱硬化性之接著劑組成物含有聚合物成分(a)-1(100質量份)、環氧樹脂(b1)-1(10質量份)、熱硬化劑(b2)-1(1.5質量份)、填充材(d)-1(75質量份)、偶合劑(e)-1(0.5質量份)及交聯劑(f)-1(0.5質量份)。 繼而,使用聚對苯二甲酸乙二酯製膜的單面經聚矽氧處理進行了剝離處理之剝離膜(琳得科(Lintec)製造之SP-PET751031,75μm),於前述剝離處理面塗敷前述所得之接著劑組成物,於80℃加熱乾燥2分鐘而獲得膜狀接著劑。 然後,於膜狀接著劑的露出面貼附前述所得之中間層。藉此,獲得將剝離膜、膜狀接著劑及中間層依序積層之積層體。[Production of film adhesive] To manufacture a thermosetting adhesive composition containing polymer component (a)-1 (100 parts by mass), epoxy resin (b1)-1 (10 parts by mass), thermosetting Agent (b2)-1 (1.5 parts by mass), filler (d)-1 (75 parts by mass), coupling agent (e)-1 (0.5 parts by mass) and crosslinking agent (f)-1 (0.5 parts by mass) ). Next, a release film (SP-PET751031, 75 μm, manufactured by Lintec), whose one side has been subjected to polysiloxane treatment and peeled off from a polyethylene terephthalate film, was top-coated with the aforementioned peeling treatment. The adhesive composition obtained above was applied, and heated and dried at 80° C. for 2 minutes to obtain a film-like adhesive. Then, the intermediate layer obtained above is attached to the exposed surface of the film-like adhesive. Thereby, the laminated body which laminated|stacked a peeling film, a film-like adhesive agent, and an intermediate layer in this order was obtained.
[支撐基材及第二黏著劑層之製作] 於支撐基材(聚對苯二甲酸乙二酯製膜,三菱化學製造,Diafoil T100,厚度25μm)的表面,以乾燥後之厚度成為20μm之方式塗敷前述所得之黏著劑組成物,於100℃加熱乾燥2分鐘,藉此獲得支撐基材及第二黏著劑層之積層體。 然後,於將剝離膜、膜狀接著劑及中間層依序積層之積層體的剝離膜的露出面,貼附前述所得之支撐基材及第二黏著劑層之積層體的第二黏著劑層的露出面。藉此,獲得將支撐基材、第二黏著劑層、剝離膜、膜狀接著劑及中間層依序積層之積層體。 將支撐基材、第二黏著劑層及剝離膜依序積層之積層體稱為複合剝離膜。[Fabrication of Supporting Substrate and Second Adhesive Layer] The adhesive composition obtained above was applied on the surface of the supporting substrate (film made of polyethylene terephthalate, manufactured by Mitsubishi Chemical, Diafoil T100, thickness 25 μm) so that the thickness after drying was 20 μm, and the thickness was 100 μm. The laminated body of the support substrate and the second adhesive layer was obtained by heating and drying at °C for 2 minutes. Then, on the exposed surface of the release film of the laminate in which the release film, the film-like adhesive and the intermediate layer were sequentially laminated, the second adhesive layer of the laminate of the support base and the second adhesive layer obtained above was attached. 's exposed face. Thereby, the laminated body which laminated|stacked a support base material, a 2nd adhesive bond layer, a release film, a film-like adhesive agent, and an intermediate layer in this order was obtained. The laminated body in which the support base material, the 2nd adhesive bond layer, and the release film are laminated|stacked in this order is called a composite release film.
繼而,以對複合剝離膜之切口深度成為表1之值之方式,自積層有膜狀接著劑及中間層之側之面,藉由使用切斷刀之衝壓加工來切斷膜狀接著劑及中間層,將該切斷處的周緣部加以去除,藉此於複合剝離膜上製作成平面形狀為圓形(直徑305mm)之熱硬化性之膜狀接著劑(厚度20μm)及中間層(厚度80μm)。Then, from the surface on which the film-like adhesive and the intermediate layer were laminated, the film-like adhesive and The intermediate layer, by removing the peripheral edge of the cut portion, is formed on the composite release film to form a thermosetting film adhesive (
[半導體裝置製造用片之製造]
繼而,自前述所得之剝離膜與支撐片之積層物(相當於上文所說明之具剝離膜之第一中間積層體)去掉剝離膜,將新生成之第一黏著劑層的露出面與複合剝離膜、膜狀接著劑及中間層之積層物(相當於上文所說明之第二中間積層體)中的中間層的露出面貼合。
繼而,藉由使用切斷刀之衝壓加工,將支撐片自基材側切斷為直徑370mm之圓形,將該切斷處的周緣部加以去除。此時,使支撐片之衝壓加工位置為前述圓形之膜狀接著劑及中間層外周位置之外側,且與該圓形之膜狀接著劑及中間層成為同心圓。
藉由以上操作,而獲得具複合剝離膜之半導體裝置製造用片,該具複合剝離膜之半導體裝置製造用片係將基材(厚度110μm)、第一黏著劑層(厚度10μm)、中間層(厚度80μm)、膜狀接著劑(厚度20μm)及複合剝離膜(總厚83μm)依序於這些層之厚度方向積層而構成。[Manufacture of Sheets for Semiconductor Device Manufacturing]
Then, the peeling film was removed from the laminate of the peeling film and the support sheet obtained above (equivalent to the first intermediate laminate with the peeling film described above), and the exposed surface of the newly generated first adhesive layer was compounded. The exposed surface of the intermediate layer in the laminate of the release film, the film-like adhesive, and the intermediate layer (corresponding to the second intermediate laminate described above) is bonded together.
Then, the support piece was cut|disconnected from the base material side into the circle of diameter 370mm by the press process using a cutting blade, and the peripheral part of the cut|disconnected place was removed. At this time, the punching position of the support sheet is made to be outside the outer peripheral position of the circular film-like adhesive and the intermediate layer, and is concentric with the circular film-like adhesive and the intermediate layer.
Through the above operation, a sheet for manufacturing a semiconductor device with a composite release film was obtained. The sheet for manufacturing a semiconductor device with a composite release film is composed of a base material (
[輥體之製造] 將前述半導體裝置製造用片的基材、第一黏著劑層、中間層及膜狀接著劑之積層體於長條狀之複合剝離膜(長度100m)上,連續地以預定之間隔(圓形之膜狀接著劑之中心間之距離為378mm)配置成一列,以半導體裝置製造用片的積層有基材之側朝向輥體的中心側之方式,製造經捲成輥之輥體。輥捲繞之方向為長條狀之複合剝離膜之長邊方向。[Manufacture of roller body] The laminate of the substrate, the first adhesive layer, the intermediate layer, and the film-like adhesive of the sheet for semiconductor device manufacturing was placed on an elongated composite release film (length 100 m) continuously at predetermined intervals (circular). The distance between the centers of the film adhesives is 378 mm) arranged in a row, and a roll body wound into a roll is produced so that the side of the sheet for semiconductor device manufacturing with the substrate layered faces the center side of the roll body. The direction of the roll winding is the longitudinal direction of the elongated composite release film.
[實施例2] 於實施例1中,將支撐基材變更為厚度12μm(東麗(Toray)製造,Lumirror S10),將第二黏著劑層之厚度變更為2μm,將剝離膜變更為厚度25μm(琳得科(Lintec)製造之SP-PET251031),將對複合剝離膜之切口深度如表1所示之值般加以變更,除此以外,利用與實施例1之情形相同之方法製造半導體裝置製造用片及輥體。[Example 2] In Example 1, the thickness of the supporting substrate was changed to 12 μm (manufactured by Toray, Lumirror S10), the thickness of the second adhesive layer was changed to 2 μm, and the thickness of the release film was changed to 25 μm (Lintec ( For SP-PET251031) manufactured by Lintec), except that the depth of incision of the composite release film was changed to the value shown in Table 1, the sheet and roll for semiconductor device manufacturing were manufactured by the same method as in Example 1. body.
[實施例3] 將對複合剝離膜之切口深度如表1所示之值般加以變更以外,利用與實施例1之情形相同之方法製造半導體裝置製造用片及輥體。[Example 3] Except having changed the incision depth of the composite release film like the value shown in Table 1, the sheet for semiconductor device manufacture and the roll body were manufactured by the method similar to the case of Example 1.
[比較例1] 除了不對剝離膜進行支撐基材及第二黏著劑層之積層(不製造複合剝離膜)以外,利用與實施例1之情形相同之方法製造半導體裝置製造用片及輥體。[Comparative Example 1] A sheet for semiconductor device production and a roll body were produced by the same method as in Example 1, except that the release film was not laminated with the support substrate and the second adhesive layer (a composite release film was not produced).
[比較例2] 將對剝離膜之切口深度如表1所示之值般加以變更以外,利用與比較例1之情形相同之方法製造半導體裝置製造用片及輥體。[Comparative Example 2] Except having changed the cut depth of the peeling film like the value shown in Table 1, the sheet for semiconductor device manufacture and the roll body were manufactured by the method similar to the case of the comparative example 1.
[評價] [半導體裝置製造用片之輥體的捲印產生之評價] 自前述實施例及比較例中製造之各輥體的芯部開始計數,針對第2片至第5片的半導體裝置製造用片,目視確認於膜狀接著劑的表面是否產生圓形之捲印(源自圓形之膜狀接著劑及中間層之段差的形狀之痕跡)。[Evaluation] [Evaluation of the occurrence of imprinting of the roll body of the sheet for semiconductor device manufacturing] Counting from the core of each roll body manufactured in the aforementioned Examples and Comparative Examples, it was visually confirmed whether or not a circular engraving occurred on the surface of the film-like adhesive for the second to fifth sheets for semiconductor device manufacturing. (traces derived from the shape of the circular film adhesive and the level difference of the intermediate layer).
A:未確認到捲印。 B:有確認到捲印。A: The roll print is not confirmed. B: Marking is confirmed.
[膜狀接著劑之反覆衝壓加工性之評價] 利用與前述實施例及比較例中製作平面形狀為圓形之膜狀接著劑及中間層之積層體的方法相同之方法,進行膜狀接著劑及中間層之衝壓加工,按照下述評價基準來評價反覆衝壓加工性。[Evaluation of Repeated Pressing Workability of Film Adhesives] The film-like adhesive and the intermediate layer were punched by the same method as the method for producing the laminated body of the film-like adhesive and the intermediate layer having a circular plane shape in the aforementioned Examples and Comparative Examples, and the following evaluation criteria were used. Repeated press workability was evaluated.
自積層有膜狀接著劑及中間層之側之面,以對最初之複合剝離膜或剝離膜之切口深度成為表1之值之方式設置切斷刀,反覆進行10,000次膜狀接著劑及中間層之衝壓加工。 再者,切口深度之值係設定成針對最初(第1片)的進行了膜狀接著劑及中間層之衝壓加工的部分之複合剝離膜或剝離膜,藉由利用電子顯微鏡進行之剖面觀察,隨機測定10點已形成之切口部的複合剝離膜或剝離膜之厚度方向之深度,取該10點之平均值。From the surface on which the film adhesive and the intermediate layer are laminated, a cutting blade is set so that the depth of the incision to the first composite release film or release film becomes the value shown in Table 1, and the film adhesive and the intermediate layer are repeated 10,000 times. Stamping of layers. In addition, the value of the depth of the incision is set to the composite release film or release film of the first (1st sheet) portion where the film adhesive and the intermediate layer have been punched, by cross-sectional observation with an electron microscope, The depth in the thickness direction of the composite release film or the release film of the notch portion formed at 10 points was randomly measured, and the average value of the 10 points was taken.
A:針對自最後之加工起數來10片份,膜狀接著劑之衝壓加工有適當地進行。 B:針對自最後之加工起數來10片份,有5片以上的膜狀接著劑之衝壓加工未適當地進行(於切斷刀之切口對象處,確認到未能切斷處)。A: For 10 sheets counted from the last processing, the press processing of the film adhesive is appropriately performed. B: For 10 sheets from the last processing, the press processing of 5 or more sheets of the film-like adhesive was not performed properly (at the target of the cut by the cutting blade, it was confirmed that the cutting could not be performed).
[貼裝製程之反覆適性評價] 針對前述實施例及比較例中所得之半導體裝置製造用片,使用帶貼裝機(琳得科(Lintec)製造之RAD-2700),連續進行30片份的將該半導體裝置製造用片的膜狀接著劑貼附於12吋之半導體晶圓內面及環形框架(DISCO公司製造)的步驟。該步驟係一邊將半導體裝置製造用片的複合剝離膜或剝離膜自該片剝離一邊進行。 對適當進行了膜狀接著劑之衝壓加工者中,自膜狀接著劑剝下複合剝離膜或剝離膜時的複合剝離膜或剝離膜之狀況進行確認。[Evaluation of Repeatability of Mounting Process] With respect to the sheets for manufacturing semiconductor devices obtained in the aforementioned Examples and Comparative Examples, a tape mounter (RAD-2700 manufactured by Lintec) was used to continuously perform 30 sheets of film-forming sheets for manufacturing semiconductor devices. The step of attaching the agent to the inner surface of the 12-inch semiconductor wafer and the ring frame (manufactured by DISCO). This step is performed while peeling the composite release film or the release film of the sheet for semiconductor device production from the sheet. The state of the composite release film or the release film at the time of peeling off the composite release film or the release film from the film adhesive is confirmed in those who have appropriately performed the press processing of the film adhesive.
A:於連續貼附30片之期間中,未確認到複合剝離膜或剝離膜的一部分或全部被切開或裂開。 B:於連續貼附30片之期間中,確認到複合剝離膜或剝離膜的一部分或全部被切開或裂開。A: During the period in which 30 sheets were continuously attached, the composite release film or a part or all of the release film was not found to be cut or torn. B: During the period in which 30 sheets were continuously attached, it was confirmed that a part or all of the composite release film or the release film was cut or torn.
將前述評價之結果顯示於表1。The results of the aforementioned evaluation are shown in Table 1.
[表1]
如由前述結果所表明,具有含有第二黏著劑層及支撐基材之複合剝離膜且複合剝離膜之總厚超過38μm的實施例1至實施例3之半導體裝置製造用片係捲印之產生明顯得到抑制。As shown from the foregoing results, the production of the roll printing of the sheet system for semiconductor device manufacturing of Examples 1 to 3 having a composite release film containing a second adhesive layer and a support substrate and the total thickness of the composite release film exceeding 38 μm significantly suppressed.
另外,對複合剝離膜或剝離膜之切口深度超過25μm的實施例1至實施例3、及比較例1中,反覆衝壓加工性優異。In addition, in Examples 1 to 3 and Comparative Example 1 in which the depth of the incision of the composite release film or the release film exceeded 25 μm, the repeated press workability was excellent.
另外,作為“剝離膜、第二黏著劑層及支撐基材之總厚-切口深度”之值的切餘部之厚度越厚,貼裝製程時越不易產生剝離膜之斷裂。In addition, the thicker the thickness of the remainder, which is the value of "the total thickness of the release film, the second adhesive layer and the support substrate - the depth of the incision", the less likely the release film to break during the mounting process.
即便於切餘部之厚度相對較薄之情形時,在剝離膜及第二黏著劑層之總厚之值亦大於前述切口深度之值,未於支撐基材形成有切口部之實施例2中,貼裝製程時亦不易產生剝離膜之斷裂。Even in the case where the thickness of the cut portion is relatively thin, the value of the total thickness of the release film and the second adhesive layer is greater than the value of the aforementioned cut depth, and in Example 2 where no cut portion is formed in the support substrate, It is also not easy to break the peeling film during the mounting process.
實施例之半導體裝置製造用片係製成輥體時之捲印之產生得到抑制,膜狀接著劑之衝壓加工中之良率得以提高,非常有用。The sheet system for manufacturing a semiconductor device of the Example is very useful because the occurrence of engraving is suppressed when the sheet system for manufacturing a semiconductor device is formed into a roll body, and the yield in the stamping process of the film adhesive is improved.
各實施形態中之各構成及這些之組合等為一例,能夠於不偏離本發明之主旨之範圍內,進行構成之附加、省略、替換及其他變更。另外,本發明不受各實施形態之限定,僅受請求項(申請專利範圍)之範圍限定。The respective configurations and combinations of these in the respective embodiments are examples, and additions, omissions, substitutions, and other modifications of the configurations can be made without departing from the gist of the present invention. In addition, the present invention is not limited to each embodiment, but is limited only by the scope of the claims (claims to be claimed).
1:支撐片
7:上拉部
8:背面研磨帶
9:半導體晶片
9a:半導體晶片的電路形成面
9b:半導體晶片的內面
9’:半導體晶圓
9a’:半導體晶圓的電路形成面
9b’:半導體晶圓的內面
10:積層片
11:基材
11a:基材的第一面
12:第一黏著劑層
12a:第一黏著劑層的第一面
13:中間層
13a:中間層的第一面
14:膜狀接著劑
14a:膜狀接著劑的第一面
15:剝離膜
16:第二黏著劑層
17:支撐基材
20:複合剝離膜
90’:改質層
100,101,102:半導體裝置製造用片
110:輥體
140:切斷後的膜狀接著劑
901:半導體晶片群
910:具膜狀接著劑之半導體晶片群
914:具膜狀接著劑之半導體晶片
C:切口部
D1:切口深度
D2:切餘部之厚度
E1
:擴展之方向
P:單元
W13
:中間層之寬度
W14
:膜狀接著劑之寬度1: support sheet 7: pull-up portion 8: back grinding tape 9:
[圖1]係示意性地表示本發明之一實施形態之半導體裝置製造用片的剖面圖。 [圖2]係示意性地表示本發明之一實施形態之半導體裝置製造用片的剖面圖。 [圖3]係圖2所示之半導體裝置製造用片之平面圖。 [圖4]係示意性地表示本發明之一實施形態之半導體裝置製造用片的剖面圖。 [圖5]係圖4所示之半導體裝置製造用片之切口部之放大圖。 [圖6]係示意性地表示本發明之一實施形態之半導體裝置製造用片之輥體的剖面圖。 [圖7A]係用以示意性地說明作為本發明之一實施形態之半導體裝置製造用片之使用對象的半導體晶片之製造方法的剖面圖。 [圖7B]係用以示意性地說明作為本發明之一實施形態之半導體裝置製造用片之使用對象的半導體晶片之製造方法的剖面圖。 [圖7C]係用以示意性地說明作為本發明之一實施形態之半導體裝置製造用片之使用對象的半導體晶片之製造方法的剖面圖。 [圖8A]係用以示意性地說明本發明之一實施形態之半導體裝置製造用片之使用方法的剖面圖。 [圖8B]係用以示意性地說明本發明之一實施形態之半導體裝置製造用片之使用方法的剖面圖。 [圖8C]係用以示意性地說明本發明之一實施形態之半導體裝置製造用片之使用方法的剖面圖。1 is a cross-sectional view schematically showing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. 2 is a cross-sectional view schematically showing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. Fig. 3 is a plan view of the wafer for manufacturing a semiconductor device shown in Fig. 2 . 4 is a cross-sectional view schematically showing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. 5] It is an enlarged view of the notch part of the sheet for semiconductor device manufacturing shown in FIG. 4. [FIG. 6] It is sectional drawing which shows typically the roll body of the sheet for semiconductor device manufacture which concerns on one Embodiment of this invention. 7A is a cross-sectional view schematically illustrating a method for manufacturing a semiconductor wafer to which the sheet for manufacturing a semiconductor device according to one embodiment of the present invention is used. 7B is a cross-sectional view schematically illustrating a method of manufacturing a semiconductor wafer to which the sheet for manufacturing a semiconductor device according to one embodiment of the present invention is used. 7C is a cross-sectional view schematically illustrating a method of manufacturing a semiconductor wafer to which the sheet for manufacturing a semiconductor device according to one embodiment of the present invention is used. 8A is a cross-sectional view schematically illustrating a method of using the sheet for manufacturing a semiconductor device according to an embodiment of the present invention. 8B is a cross-sectional view schematically illustrating a method of using the sheet for manufacturing a semiconductor device according to one embodiment of the present invention. 8C is a cross-sectional view schematically illustrating a method of using the sheet for manufacturing a semiconductor device according to one embodiment of the present invention.
1:支撐片 1: Support sheet
11:基材 11: Substrate
11a:基材的第一面 11a: The first side of the substrate
12:第一黏著劑層 12: The first adhesive layer
12a:第一黏著劑層的第一面 12a: The first side of the first adhesive layer
14:膜狀接著劑 14: Film adhesive
14a:膜狀接著劑的第一面 14a: The first side of the film adhesive
15:剝離膜 15: Peel off film
16:第二黏著劑層 16: Second Adhesive Layer
17:支撐基材 17: Support substrate
20:複合剝離膜 20: Composite release film
100:半導體裝置製造用片 100: Sheets for the manufacture of semiconductor devices
W14:膜狀接著劑之寬度 W 14 : Width of film adhesive
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020-058730 | 2020-03-27 | ||
JP2020058730A JP7475923B2 (en) | 2020-03-27 | 2020-03-27 | Sheet for manufacturing semiconductor device and method for manufacturing the sheet for manufacturing semiconductor device. |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202145323A true TW202145323A (en) | 2021-12-01 |
Family
ID=77809507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110110959A TW202145323A (en) | 2020-03-27 | 2021-03-26 | Sheet for manufacturing semiconductor device, and method to manufacture the sheet for manufacturing semiconductor device by sequentially laminating the first adhesive layer, the film-like adhesive, the release film, the second adhesive layer, and the support substrate on a substrate |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7475923B2 (en) |
KR (1) | KR20210120895A (en) |
CN (1) | CN113451195A (en) |
TW (1) | TW202145323A (en) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5946650B2 (en) | 1976-05-18 | 1984-11-14 | 株式会社サンノ− | Livestock manure solid-liquid separator |
JP5322609B2 (en) | 2008-12-01 | 2013-10-23 | 日東電工株式会社 | Film roll for semiconductor device manufacturing |
JP5653675B2 (en) | 2010-07-30 | 2015-01-14 | 古河電気工業株式会社 | Wafer processing tape |
KR102171423B1 (en) | 2013-10-21 | 2020-10-29 | 린텍 가부시키가이샤 | Sheet for forming resin film |
WO2016098697A1 (en) | 2014-12-19 | 2016-06-23 | リンテック株式会社 | Sheet laminate for forming resin film |
WO2018083982A1 (en) | 2016-11-01 | 2018-05-11 | リンテック株式会社 | Dicing die bonding sheet and method for producing semiconductor chip |
JP6582013B2 (en) | 2017-03-31 | 2019-09-25 | 古河電気工業株式会社 | Mask protection surface protection tape with release liner |
JP6998154B2 (en) | 2017-08-29 | 2022-01-18 | リンテック株式会社 | Die bonding sheet |
-
2020
- 2020-03-27 JP JP2020058730A patent/JP7475923B2/en active Active
-
2021
- 2021-03-26 KR KR1020210039285A patent/KR20210120895A/en active Search and Examination
- 2021-03-26 CN CN202110325401.4A patent/CN113451195A/en active Pending
- 2021-03-26 TW TW110110959A patent/TW202145323A/en unknown
Also Published As
Publication number | Publication date |
---|---|
JP2021158277A (en) | 2021-10-07 |
JP7475923B2 (en) | 2024-04-30 |
KR20210120895A (en) | 2021-10-07 |
CN113451195A (en) | 2021-09-28 |
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