TW202145323A - Sheet for manufacturing semiconductor device, and method to manufacture the sheet for manufacturing semiconductor device by sequentially laminating the first adhesive layer, the film-like adhesive, the release film, the second adhesive layer, and the support substrate on a substrate - Google Patents

Abstract

The present invention relates to a sheet for manufacturing a semiconductor device. The sheet for manufacturing a semiconductor device includes a substrate, a first adhesive layer, a film-like adhesive, a release film, a second adhesive layer, and a supporting substrate. It is formed by sequentially laminating the aforementioned first adhesive layer, the film-like adhesive, the release film, the second adhesive layer, and the support substrate on a substrate. The thickness of the composite release film formed by sequentially laminating the aforementioned release film, the second adhesive layer, and the aforementioned supporting substrate is greater than 38 [mu]m.

Description

Sheet for manufacturing semiconductor device and method for manufacturing sheet for manufacturing semiconductor device

The present invention relates to a sheet for manufacturing a semiconductor device and a method for manufacturing the sheet for manufacturing a semiconductor device. This application claims priority based on Japanese Patent Application No. 2020-058730 filed in Japan on March 27, 2020, and the content of the application is incorporated herein by reference.

When manufacturing a semiconductor device, a semiconductor wafer with a film-like adhesive is used, and the semiconductor wafer with a film-like adhesive includes a semiconductor wafer and a film-like adhesive provided on the inner surface of the semiconductor wafer.

As an example of the manufacturing method of the semiconductor wafer with a film-like adhesive, the method shown below is mentioned, for example. First, a dicing die-bonding sheet is attached to the inner surface of the semiconductor wafer. As a dicing bond wafer, the dicing bond wafer provided with a support sheet and the film-like adhesive provided on the surface of the said support sheet is mentioned, for example. The support sheet can be used as a cutting sheet. As the support sheet, there are various types of support sheets including a base material and an adhesive layer provided on the surface of the base material, and a support sheet composed of only the base material. In the case of a support sheet provided with an adhesive layer, a film-like adhesive is provided on the side opposite to the side where the base material is provided in the adhesive layer. The dicing die is attached to the inner surface of the semiconductor wafer by a film adhesive.

Next, the semiconductor wafer on the support sheet is cut together with the film-like adhesive by blade dicing. The "cutting" of the semiconductor wafer is also called "segmentation", whereby the semiconductor wafer is singulated into a target semiconductor wafer. The film-like adhesive is cut along the outer periphery of the semiconductor wafer. Thereby, a semiconductor wafer with a film-like adhesive can be obtained, and a group of semiconductor wafers with a film-like adhesive can be obtained, wherein the semiconductor wafer with a film-like adhesive includes a semiconductor wafer and is provided on the inner surface of the semiconductor wafer In the film-like adhesive after cutting, a plurality of these semiconductor wafers with the film-like adhesive are held in an aligned state on the support sheet.

Then, the semiconductor wafer with the film-like adhesive is pulled off from the supporting sheet and picked up. In the case of using a support sheet having a hardening adhesive layer, at this time, by hardening the adhesive layer, the adhesiveness is reduced, and the pick-up becomes easy. Through the above operations, a semiconductor wafer with a film-like adhesive for manufacturing a semiconductor device was obtained.

As another example of the manufacturing method of the semiconductor wafer with a film-like adhesive, the method shown below is mentioned, for example. First, a back grinding tape (sometimes called an alias: "surface protection tape") is attached to the circuit formation surface of the semiconductor wafer. Then, a predetermined dividing place is set inside the semiconductor wafer, and the area included in the place is used as a focal point, and laser light is irradiated in a manner of focusing on the focal point, thereby forming a modified layer inside the semiconductor wafer. Then, the inner surface of the semiconductor wafer is ground using a grinder, thereby adjusting the thickness of the semiconductor wafer to a target value. A plurality of semiconductor wafers are produced by dividing (separating) the semiconductor wafer at the site where the modified layer is formed by utilizing the force applied to the semiconductor wafer at the time of grinding.

Then, the adhesive wafers were attached to the surfaces of all of the semiconductor wafers immobilized on the back grinding tape, on which the above-mentioned grinding was performed. As the sticky wafer, the same as the above-mentioned dicing sticky wafer can be mentioned. Die-bond Sometimes, as mentioned above, it is possible to design the same structure as the dicing-die simply by not using the die-die during dicing of semiconductor wafers. The adhesive wafer is also stably attached to the inner surface of the semiconductor wafer by the film adhesive in the adhesive wafer.

Then, after the back grinding tape is removed from the semiconductor wafer, the adhesive wafer is stretched in a direction parallel to the surface of the adhesive wafer (for example, the surface where the film adhesive is attached to the semiconductor wafer), and so-called expansion is performed, thereby extending along the surface of the wafer. The film-like adhesive is cut to adhere to the outer periphery of the semiconductor wafer. The temperature at this time may be normal temperature, or it may be carried out at low temperature. When performed at a low temperature (cold expansion; Cool Expand), the film-like adhesive can be cut more easily than when performed at normal temperature. Through the above operations, a semiconductor wafer with a film-like adhesive is obtained, which includes a semiconductor wafer and a cut film-like adhesive provided on the inner surface of the semiconductor wafer.

Then, as in the case of the aforementioned dicing with a blade, the semiconductor wafer with the film-like adhesive is torn off from the aforementioned support sheet and picked up, whereby a semiconductor wafer with a film-like adhesive for manufacturing a semiconductor device is stably obtained. .

The picked-up semiconductor wafer is bonded to the circuit formation surface of the substrate by the film-like adhesive provided on the inner surface of the semiconductor wafer, and if necessary, one or more other semiconductor wafers are laminated on the semiconductor wafer, and bonded by wire bonding. After the electrical connection is made, the whole is sealed with resin. Using the semiconductor package obtained in this way, a target semiconductor device is finally manufactured.

Both the dicing wafer and the wafer bonding can be used to manufacture semiconductor wafers with film-like adhesives, which can ultimately be used to manufacture target semiconductor devices. In this specification, the dicing and bonding wafers are referred to as "semiconductor device manufacturing wafers".

Patent Document 1 discloses a dicing-die-bonding tape (corresponding to the above-mentioned die-bonding wafer) as a film-like adhesive capable of being cut by spreading, and the dicing-die-bonding tape is a An adhesive layer, a base layer (corresponding to an intermediate layer), and an adhesive layer (equivalent to the aforementioned film-like adhesive) are sequentially laminated and constituted, and the aforementioned substrate layer has a specific range of tensile properties. According to this wafer bonding, by having the aforementioned base material layer corresponding to the intermediate layer, the film-like adhesive can be cut with high precision at the time of spreading.

In addition, a sticky wafer or the like may be continuously bonded to a long release film, rolled and supplied in a roll shape. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 5946650.

[The problem to be solved by the invention]

For example, the above-mentioned adhesive layer (corresponding to the above-mentioned film-like adhesive) may be punched in advance according to the shape of a semiconductor wafer or the like to be used. In addition, the base material layer (corresponding to the intermediate layer) can also be punched in the same manner. Excessive portions (not attached to the peripheral portion of the semiconductor wafer, etc.) that have been punched are removed, so that these punched portions are stacked higher than the surrounding portions. However, such a level difference due to the difference in layer thickness of each build-up portion has the following problem: when the sheet for semiconductor device manufacturing is wound in a roll shape and supplied, the position of each level difference is deviate and overlapped, and it is likely to become a roll mark ( Also known as "roll marks") causes.

The present invention has been made in order to solve the above-mentioned problems, and an object of the present invention is to provide a sheet for manufacturing a semiconductor device and a method for manufacturing the sheet for manufacturing a semiconductor device in which the occurrence of scribing is suppressed. [means to solve the problem]

In order to solve the above-mentioned problems, the inventors of the present application have conducted intensive studies, and as a result, have found that a composite release film having a release film, a second adhesive layer, and a support substrate are sequentially laminated by providing a semiconductor device manufacturing sheet with a composite release film. The above-mentioned problems were solved by setting the thickness of the composite release film to a specific value, and the present invention was completed. That is, the present invention has the following aspects.

(1) A sheet for manufacturing a semiconductor device, comprising a substrate, a first adhesive layer, a film-like adhesive, a release film, a second adhesive layer, and a support substrate, and the above-mentioned substrates are sequentially laminated on the substrate The first adhesive layer, the film-like adhesive, the release film, the second adhesive layer, and the support substrate are formed; the release film, the second adhesive layer, and the support substrate are sequentially laminated. The thickness of the composite release film constituted by it exceeds 38 μm. (2) The sheet for manufacturing a semiconductor device according to the above (1), wherein the composite release film has a cutout portion formed on the surface on which the film-like adhesive is laminated; the cutout portion has a cutout depth exceeding 25 μm. (3) The sheet for semiconductor device manufacturing according to the above (2), wherein the value of the thickness of the trimmed portion represented by the thickness of the composite release film - the depth of the incision is 10 μm or more. (4) The sheet for semiconductor device manufacturing according to the above (2) or (3), wherein the value of the total thickness of the release film and the second adhesive layer is greater than the value of the depth of the incision. (5) The sheet for manufacturing a semiconductor device according to any one of (2) to (4) above, wherein the support base is not formed with the cutout portion. (6) The sheet for semiconductor device manufacturing according to any one of the above (1) to (5), wherein the thickness of the second adhesive layer is 2 μm or more. (7) The sheet for semiconductor manufacturing according to any one of (1) to (6) above, wherein an intermediate layer is laminated between the first adhesive layer and the film-like adhesive. (8) The sheet for semiconductor device manufacturing according to the above (7), wherein the area of the intermediate layer and the area of the film-like adhesive are both smaller than the area of at least one surface of the layer on the substrate side than these layers. (9) The sheet for semiconductor device manufacturing according to the above (7) or (8), wherein the total thickness of the intermediate layer and the film-like adhesive is 15 μm or more. (10) The sheet for manufacturing a semiconductor device according to any one of (1) to (9) above, wherein the thickness of the support substrate is 12 μm or more. (11) The sheet for manufacturing a semiconductor device according to any one of (1) to (10) above, wherein the composite release film has a thickness of 130 μm or less. (12) The sheet for manufacturing a semiconductor device according to any one of (1) to (11) above, wherein the substrate, the first adhesive layer, and The film-like adhesive is a roll body formed by winding the base material, the first adhesive layer, and the film-like adhesive as an inner side. (13) A method of manufacturing a sheet for manufacturing a semiconductor device, which manufactures the sheet for manufacturing a semiconductor device according to any one of (1) to (12) above, wherein the manufacturing method comprises: combining the substrate and the first An adhesive layer is laminated to obtain a first intermediate laminate; the film adhesive, the release film, the second adhesive layer and the support substrate are laminated in this order to obtain a second intermediate laminate; and The said 1st intermediate laminated body and the said 2nd intermediate laminated body are bonded together. [Inventive effect]

According to the present invention, it is possible to provide a sheet for manufacturing a semiconductor device and a method for manufacturing the sheet for manufacturing a semiconductor device, in which the occurrence of engraving is suppressed.

Hereinafter, embodiments of the sheet for manufacturing a semiconductor device and a method for manufacturing the sheet for manufacturing a semiconductor device of the present invention will be described.

◇Semiconductor device manufacturing sheet [First Embodiment] The sheet for semiconductor device manufacturing according to the embodiment includes a substrate, a first adhesive layer, a film adhesive, a release film, a second adhesive layer, and a support substrate, and the first above-mentioned first adhesive layer is sequentially laminated on the above-mentioned substrate. The adhesive layer, the film-like adhesive, the release film, the second adhesive layer, and the support substrate are formed, and the release film, the second adhesive layer, and the support substrate are sequentially laminated. The thickness of the composite release film exceeds 38μm.

In the sheet for semiconductor device manufacture of the embodiment, an intermediate layer may be laminated between the first adhesive layer and the film-like adhesive. The sheet for manufacturing a semiconductor device of the present embodiment includes a substrate, and a first adhesive layer, an intermediate layer, a film adhesive, a release film, a second adhesive layer, and a support substrate are laminated in this order on the substrate. The thickness of the composite release film having a structure in which the release film, the second adhesive layer, and the support substrate are sequentially laminated is more than 38 μm.

As described above, the sheet for manufacturing a semiconductor device of the present embodiment includes a laminate in which a release film, a second adhesive layer, and a support substrate are sequentially laminated (hereinafter, this laminate may be referred to as "composite peeling" in some cases). film”), and the thickness of the laminate exceeds 38 μm, whereby even when the sheet for semiconductor device manufacturing is rolled into a roll and supplied as a roll, the occurrence of engraving is suppressed. It can be considered that the reason is that the composite release film is composed of a second adhesive layer and a supporting substrate laminated on the release film, especially due to the buffering effect of the second adhesive layer, due to the difference in the total thickness of each layer. The level difference becomes less likely to affect the overlapped part by winding, so that the occurrence of roll marks can be suppressed. The roll printing system can be confirmed by unwinding the roll of the roll body and visually observing the overlapping portion of the above-mentioned step in the film adhesive or the like. The confirmation of the engraving is preferably performed in the vicinity of the core of the roll body where engraving is likely to occur.

In this specification, unless otherwise specified, the "thickness" can be expressed as a value obtained by measuring the thickness at 5 randomly selected locations and averaging them, according to JIS (Japanese Industrial Standards; Japanese Industrial Standards) K7130, using constant pressure obtained with a thickness gauge.

The composite release film of the embodiment may be provided with another layer not corresponding to any one of the release film, the second adhesive layer, and the support substrate. However, as shown in FIG. 1 , the sheet for manufacturing a semiconductor device according to the embodiment preferably includes the second adhesive layer 16 in a state of direct contact with the release film 15 and a support base in a state of direct contact with the second adhesive layer 16 Material 17.

The semiconductor wafer after dicing is also preferably used for the wafer for manufacturing a semiconductor device of the present embodiment. Here, the so-called diced semiconductor wafer includes a state in which a plurality of semiconductor wafers are arranged in advance, or a plurality of semiconductor wafers arranged in such a manner, and other semiconductor wafers that are not included in the semiconductor wafer. Divided into regions of semiconductor wafers.

Such a use object of the sheet for semiconductor device manufacturing is obtained, for example, by dicing of the following semiconductor wafers. That is, first, the back grinding tape is attached to the surface of the semiconductor wafer on which the circuit is formed. Then, laser light is irradiated so as to be focused on a focal point set inside the semiconductor wafer, thereby forming a modified layer inside the semiconductor wafer. The position of the focal point at this time is the predetermined dividing position of the semiconductor wafer, and is set so that the semiconductor wafers of the desired size, shape and number are obtained from the semiconductor wafer. Next, the surface (that is, the inner surface) on the opposite side to the circuit formation surface of the semiconductor wafer is ground using a grinder. Thereby, the thickness of the semiconductor wafer is adjusted to a target value, and the force applied to the semiconductor wafer at the time of grinding is used to divide the semiconductor wafer at the site where the modified layer is formed to form a plurality of semiconductor wafers. . Unlike other parts of the semiconductor wafer, the modified layer of the semiconductor wafer is degraded by the irradiation of laser light, and its strength is weakened. Therefore, by applying a force to the semiconductor wafer on which the modified layer is formed, the force is applied to the modified layer inside the semiconductor wafer, and the semiconductor wafer is fractured in the portion of the modified layer to obtain a plurality of semiconductor wafers. In addition, depending on the conditions at the time of grinding, a part of the semiconductor wafer may not be divided into semiconductor wafers.

In addition, the dicing method in particular of the object of use of the sheet for semiconductor device manufacture of embodiment is not restrict|limited. For example, as a method of dividing a semiconductor wafer into semiconductor wafers, blade dicing using a blade, laser dicing by laser irradiation, water dicing by spraying water containing an abrasive, For each dicing such as plasma dicing by plasma irradiation, the sheet for semiconductor device manufacturing of the embodiment can be applied to any method.

Hereinafter, the above-mentioned sheet for manufacturing a semiconductor device will be described in detail with reference to the drawings. In addition, in the drawings used in the following description, in order to facilitate the understanding of the characteristics of the embodiment, the main parts may be enlarged and shown for convenience, and the dimensional ratios and the like of each component are not necessarily the same as the actual ones.

FIG. 1 is a cross-sectional view schematically showing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. 2 and later, the same components as those shown in the already described drawings are denoted by the same reference numerals as in the already described drawings, and detailed descriptions of the components are omitted.

The sheet 100 for manufacturing a semiconductor device shown here includes a base material 11, and on the base material 11, a first adhesive layer 12, a film-like adhesive 14, a release film 15, a second adhesive layer 16 and The base material 17 is supported. The release film, the second adhesive layer and the support substrate constitute the composite release film 20 .

2 is a cross-sectional view schematically showing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention.

The sheet 101 for manufacturing a semiconductor device shown here is provided with a base material 11, and a first adhesive layer 12, an intermediate layer 13, a film-like adhesive 14, a release film 15, and a second adhesive are laminated in this order on the base material 11. The agent layer 16 and the support base 17 are formed. The release film, the second adhesive layer and the support substrate constitute the composite release film 20 . The sheet 101 for manufacturing a semiconductor device is formed by the sheet 100 for manufacturing a semiconductor device further including the intermediate layer 13 . Hereinafter, the configuration of the sheet for manufacturing a semiconductor device according to the embodiment will be described by taking the sheet 101 for manufacturing a semiconductor device shown in FIG. 2 as an example.

In the sheet 101 for manufacturing a semiconductor device, the first adhesive layer 12 is provided on one side (hereinafter, sometimes referred to as "the first side" in this specification) 11a of the substrate 11, and the first adhesive layer 12 An intermediate layer 13 is provided on the side opposite to the side on which the base material 11 is provided (hereinafter, sometimes referred to as "the first side" in this specification) 12a, and the first side of the intermediate layer 13 is provided with the first side. The side of the adhesive layer 12 is the surface on the opposite side (hereinafter, sometimes referred to as "the first surface" in this specification) 13a on which the film-like adhesive 14 is provided, and the film-like adhesive 14 is provided in the middle. The composite release film 20 is provided on the surface (hereinafter, sometimes referred to as a "first surface" in this specification) 14a on the side of the layer 13 on the opposite side. In this way, the sheet 101 for manufacturing a semiconductor device is constituted by laminating the base material 11 , the first adhesive layer 12 , the intermediate layer 13 , the film adhesive 14 , and the composite release film 20 in this order in the thickness direction of these layers.

The sheet 101 for semiconductor device manufacturing is in the state where the composite release film 20 is removed, and the first surface 14a of the film adhesive 14 is attached to a semiconductor wafer, a semiconductor wafer, or a semiconductor wafer that is not completely divided (illustration omitted). ) is used inside.

In this specification, in the case of either a semiconductor wafer or a semiconductor chip, the surface on the side where the circuit is formed is referred to as the "circuit formation surface", and the surface on the opposite side to the circuit formation surface is referred to as the "inner surface". noodle".

In this specification, the laminated body containing a base material and a 1st adhesive bond layer may be called a "support sheet". In FIG. 2, reference numeral 1 denotes a support piece. In addition, a laminate having a structure in which a base material, a first adhesive layer, and an intermediate layer are sequentially laminated in the thickness direction of these layers may be referred to as a "laminated sheet". In FIG. 2, reference numeral 10 denotes a laminated sheet. The laminate of the support sheet and the intermediate layer is included in the laminate.

FIG. 3 is a plan view of the wafer for manufacturing a semiconductor device shown in FIG. 2 . The planar shapes of the intermediate layer 13 and the film adhesive 14 are both circular when viewed from above the intermediate layer 13 and the film adhesive 14 , and the diameter of the intermediate layer 13 and the film adhesive 14 are the same. In addition, in the sheet 101 for manufacturing a semiconductor device, the intermediate layer 13 and the film-like adhesive 14 are arranged so that the centers of these layers are aligned, in other words, the intermediate layer 13 and the film-like adhesive 14 are located on the outer periphery of these layers. The layers are arranged in such a way that the radial directions are uniform.

As a preferable shape of each layer constituting the sheet for semiconductor manufacturing, a circular support sheet 1, a circular intermediate layer 13 and a film adhesive 14 with a smaller diameter than the support sheet 1 are laminated in a concentric shape.

In the semiconductor manufacturing sheet 101 shown in FIG. 2 , both the first surface 13 a of the intermediate layer 13 and the first surface 14 a of the film adhesive 14 are smaller in area than the first surface 12 a of the first adhesive layer 12 . Moreover, the maximum value (ie diameter) of the width W ₁₃ of the intermediate layer 13 and the maximum value (ie, the diameter) of the width W ₁₄ of the film adhesive 14 are both smaller than the maximum value of the width of the first adhesive layer 12 and the base The maximum value of the width of the material 11. Therefore, in the sheet 101 for manufacturing a semiconductor device, a part of the first surface 12 a of the first adhesive layer 12 is not covered by the intermediate layer 13 and the film-like adhesive 14 . In the first surface 12a of the first adhesive layer 12 where the intermediate layer 13 and the film-like adhesive 14 are not laminated, the composite release film 20 is in direct contact and laminated, and the composite release film 20 is removed. , this region is exposed (hereinafter, this region may be referred to as a "non-lamination region" in this specification). Furthermore, in the sheet 101 for manufacturing a semiconductor device provided with the composite release film 20 , in the region of the first adhesive layer 12 that is not covered by the intermediate layer 13 and the film-like adhesive 14 , there may be no lamination as shown here. The region of the composite release film 20 may not exist.

The sheet 101 for manufacturing a semiconductor device can be used for fixing by attaching a part of the non-lamination region of the first adhesive layer 12 in a state where the film adhesive 14 is not cut and attached to the above-mentioned semiconductor wafer or the like. It is fixed by fixtures such as ring frames of semiconductor wafers. Therefore, it is not necessary to additionally provide an adhesive layer for a jig for fixing the sheet 101 for manufacturing a semiconductor device to the aforementioned jig on the sheet 101 for manufacturing a semiconductor device. Furthermore, since it is not necessary to provide an adhesive layer for a jig, the sheet 101 for manufacturing a semiconductor device can be manufactured inexpensively and efficiently.

In this manner, the sheet 101 for manufacturing a semiconductor device exhibits an advantageous effect by not having an adhesive layer for a jig, but may include an adhesive layer for a jig. In this case, the adhesive layer for a jig is provided in the area|region in the vicinity of the peripheral part in the surface of any layer which comprises the sheet|seat 101 for semiconductor device manufacture. As such a region, the above-mentioned non-lamination region in the first surface 12a of the first adhesive layer 12 can be mentioned.

The adhesive layer for a jig may be a well-known one, for example, a single-layer structure containing an adhesive component, or a multilayer structure having a layer containing an adhesive component on both surfaces of the sheet serving as the core material.

In addition, as described later, the sheet 101 for manufacturing a semiconductor device is stretched in a direction parallel to the surface of the sheet 101 for manufacturing a semiconductor device (for example, the first surface 12a of the first adhesive layer 12 ), so-called spreading is performed. In this case, the sheet 101 for manufacturing a semiconductor device can be easily expanded by the presence of the non-lamination region on the first surface 12 a of the first adhesive layer 12 . Furthermore, not only the film-like adhesive 14 can be easily cut, but also peeling of the intermediate layer 13 and the film-like adhesive 14 from the first adhesive layer 12 is suppressed in some cases.

For example, the sheet for manufacturing a semiconductor device of the present embodiment may include other layers not corresponding to any of the substrate, the first adhesive layer, the intermediate layer, the film-like adhesive, the composite release film, and the adhesive layer for jigs . However, as shown in FIG. 2 , the sheet for manufacturing a semiconductor device according to the embodiment preferably includes a first adhesive layer in a state of direct contact with the base material, and an intermediate layer in a state of direct contact with the first adhesive layer, so as to directly contact the first adhesive layer. The state of the intermediate layer is provided with a film-like adhesive, and the state in which the intermediate layer is in direct contact with the film-like adhesive is provided with a composite release film.

For example, in the sheet for manufacturing a semiconductor device of the present embodiment, the shape in plan view of the intermediate layer and the film-like adhesive may be a shape other than a circle, and the plan-view shapes of the intermediate layer and the film-like adhesive may be the same or different from each other. . Both the area of the intermediate layer and the area of the film-like adhesive are preferably smaller than the area of at least one surface of the layer on the substrate side than these layers. For example, the area of the first surface of the intermediate layer and the area of the first surface of the film-like adhesive are preferably both smaller than the surface of the layer closer to the substrate side than these layers (eg, the first surface of the first adhesive layer). area. The planar shape of the intermediate layer and the film-like adhesive may be the same or different from each other. Furthermore, when the sheet for manufacturing a semiconductor device of the embodiment does not have an intermediate layer, the area of the film-like adhesive is preferably smaller than the area of at least one surface of the layer on the substrate side than the film-like adhesive. For example, the area of the first surface of the film adhesive is preferably smaller than the area of the surface of the layer on the substrate side (eg, the first surface of the first adhesive layer).

The positions of the intermediate layer and the outer periphery of the film-like adhesive may or may not be consistent in the radial direction of these layers. It is preferable that the position of the outer periphery of the plan view shape of the intermediate layer and the position of the outer periphery of the plan view shape of the film-like adhesive are located more inward than the outer periphery of the plan view shape of at least one side of the layer on the substrate side than these layers. . For example, it is preferable that the position of the outer periphery of the plan view shape of the intermediate layer and the position of the outer periphery of the plan view shape of the film adhesive are both located more inward than the position of the outer periphery of the plan view shape of the support sheet.

The intermediate layer 13 and the film-like adhesive 14 can be processed by, for example, press processing, and can be formed into arbitrary shapes. When the intermediate layer 13 and the film-like adhesive 14 are formed in a circular shape, it is preferable to use a punching knife of a corresponding shape to perform the punching process into a circular shape.

[Second Embodiment] FIG. 4 is a cross-sectional view schematically showing the sheet 102 for manufacturing a semiconductor device according to the present embodiment. FIG. 5 is an enlarged view of a cutout portion of the wafer 102 for manufacturing a semiconductor device shown in FIG. 4 . The sheet 102 for manufacturing a semiconductor device is provided with a base material 11, and a first adhesive layer 12, an intermediate layer 13, a film adhesive 14, a release film 15, a second adhesive layer 16, and a support are laminated in this order on the base 11. The thickness of the composite release film 20 is more than 38 μm, and the thickness of the composite release film 20 is more than 38 μm. A notch portion C is formed on the side surface of the agent 14 . The notch portion C is formed along the peripheral portion of the film-like adhesive 14 . The reason is that the notch portion C of the embodiment can also be formed when the film-like adhesive 14 laminated on the composite release film 20 is punched. Therefore, the shape of the inner contour of the cut portion C can be consistent with the shape of the outer contour of the film-like adhesive 14 and the shape of the outer contour of the intermediate layer 13 and the film-like adhesive 14 . By performing press processing so that the notch part C may be formed, the press process of the film adhesive 14 can be prevented from becoming incomplete.

In FIG. 5, the enlarged view of the said notch part C formed in the composite release film 20 is shown, and the notch depth of this notch part C is shown as D1. Furthermore, in this specification, the depth of the incision in the composite release film refers to the depth in the thickness direction of the composite release film formed in the incision portion of the composite release film at 10 points randomly measured by cross-sectional observation with an electron microscope, and added. average value. In the case where the depth of the incision is obtained for a release film that does not have a structure of a composite release film, which is a conventional product, the incision portion formed in the release film can be measured in the same manner as described above.

In the composite release film of the sheet for manufacturing a semiconductor device according to the embodiment, when the notch portion is formed, the notch depth of the notch portion is preferably more than 25 μm, more preferably 27 μm or more, and still more preferably 30 μm or more. When the notch depth is greater than or equal to the aforementioned lower limit value, even when pressing is repeated, the frequency of occurrence of a point where cutting cannot be performed at the target of the notch of the cutting blade is reduced, and the repetitive press workability is improved. The reason is that by making the depth of the notch deeper than before, even if the blade used for the punching process is worn out, the punching can be prevented from becoming incomplete. It is preferable that the upper limit of the depth of the incision does not break the composite release film 20 and does not reach the thickness of the composite release film 20 . The upper limit of the notch depth may be, for example, less than 100 μm, 68 μm or less, 50 μm or less, or 37 μm or less. Among them, the upper limit of the depth of the incision can be appropriately specified in consideration of the thickness of the remainder of the cut. As an example of the numerical range of the aforementioned notch depth, it may be more than 25 μm to less than 100 μm, more than 25 μm to 68 μm or less, 27 μm or more to 50 μm or less, and 30 μm or more to 37 μm or less.

In order to deepen the incision depth to the previous release film, it is advantageous that the thickness of the release film is thicker. In this respect, since the sheet for semiconductor device manufacture of this embodiment uses a peeling film as the said composite peeling film, the thickness and structure of each layer of the composite peeling film corresponding to the previous peeling film can be easily set. The sheet for manufacturing a semiconductor device of the present embodiment is excellent in that both the suppression of the occurrence of scribbles and the improvement of the repeated punching workability are achieved.

In addition, the composite release film of the embodiment has a layered structure in which the release film, the second adhesive layer, and the support substrate are laminated in this order, so that the influence of cracks starting from a notch formed in a certain layer, etc. as a starting point is not easily extended to For other layers in the composite release film, the repeatability of the mounting process (Mounting Process) described later is improved.

The value of the total thickness of the release film 15 and the second adhesive layer 16 is preferably greater than the value of the aforementioned incision depth. By setting it as such a structure, formation of the notch part C in the support base material 17 is prevented. In the support base 17, it is preferable that the notch part C is not formed. The value of the incision depth may also be greater than the thickness of the release film. In the portion where the notch portion C is formed, the composite release film may be cut or torn from the notch portion C as a starting point, but it is preferable to have an unnotched portion in order to prevent the formation of the notch portion C in the support base 17. C supports the substrate 17 to prevent the composite release film 20 from breaking.

In FIG. 5 , the thickness of the trimmed portion of the composite release film represented by D2 can be set to a value obtained from "the thickness of the composite release film - the depth of the incision". In the case where the composite release film 20 is composed of only the release film 15, the second adhesive layer 16 and the supporting substrate 17 laminated in sequence as shown in FIG. , the value obtained from the total thickness of the second adhesive layer 16 and the supporting substrate 17 - the depth of the incision.

The thickness of the cut portion is not particularly limited, but is preferably more than 10 μm, more preferably 20 μm or more, and still more preferably 45 μm or more. The upper limit of the thickness of the cut-off portion is less than the thickness of the composite release film, and becomes the value obtained by subtracting the depth of the incision from the thickness of the composite release film. When the thickness of the cut portion is equal to or greater than the aforementioned lower limit value, the composite release film can be prevented from being cut or split from the cut portion when the composite release film is removed when the sheet for semiconductor device manufacturing is used. The composite release film of the embodiment has a layered structure in which the release film, the second adhesive layer and the support substrate are sequentially laminated, so even when the thickness of the cut portion is relatively small, the composite release film can be prevented from being damaged. Tendency to be excellent in cutting or splitting. The upper limit value of the thickness of the trimmed portion is not particularly limited, and may be 60 μm or less, 30 μm or less, 20 μm or less, or 15 μm or less. As an example of the numerical range of the thickness of the cut-off portion in the composite release film, it may be more than 10 μm to 60 μm or less, may be more than 10 μm to 30 μm or less, may be more than 10 μm to 20 μm or less, and may be more than 10 μm to 15 μm or less .

Next, each layer which comprises the sheet for semiconductor device manufacture of this invention is demonstrated in detail.

○Substrate The aforementioned substrate is in the form of a sheet or a film. The constituent material of the aforementioned base material is preferably various resins, and specifically, for example, polyethylene (low density polyethylene (LDPE), linear low density polyethylene (LLDPE), high density polyethylene (HDPE, etc.)) , polypropylene (PP), polybutene, polybutadiene, polymethylpentene, styrene-ethylene-butylene-styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyterephthalic acid Ethylene Diester (PET), Polybutylene Terephthalate (PBT), Polyurethane, Polyurethane Acrylate, Polyimide (PI), Ionomer Resin, Ethylene-( Meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, ethylene-(meth)acrylic acid copolymer and ethylene copolymer other than ethylene-(meth)acrylate copolymer, polystyrene, polycarbonate Esters, fluororesins, hydrogenated products, modified products, cross-linked products or copolymers of any of these resins.

In addition, in this specification, "(meth)acrylic acid" means the concept containing both "acrylic acid" and "methacrylic acid". The same is true for terms similar to (meth)acrylic acid. For example, the so-called "(meth)acrylate" is a concept including both "acrylate" and "methacrylate", and the so-called "(meth)acrylate" "Base" is a concept including both "acryloyl" and "methacryloyl".

The resin constituting the base material may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these resins can be arbitrarily selected.

The constituent material of the base material is preferably polyethylene, more preferably low-density polyethylene (LDPE), in terms of easier adjustment of the rate of change during heating, the rate of change during cooling, and the overall rate of change.

The base material may be composed of only one layer (single layer), or may be composed of two or more layers. When the base material is composed of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited as long as the effect of the present invention is not impaired. Furthermore, in this specification, not limited to the case of the base material, the phrase "multilayers may be the same or different from each other" means "all layers may be the same, all layers may be different, or only some of the layers may be "different from each other", and further "multiple layers are different from each other" means that "at least one of the constituent material and thickness of each layer is different from each other".

The thickness of the base material can be appropriately selected according to the purpose, and is preferably 50 μm to 300 μm, more preferably 60 μm to 150 μm. By making the thickness of the base material more than the aforementioned lower limit value, the structure of the base material becomes more stable. When the thickness of the base material is below the above-mentioned upper limit value, it becomes easy to spread the base material at the time of blade dicing or the expansion of the sheet for semiconductor device manufacturing, and it becomes easy to cut the film-like shape by spreading. Then agent. Here, the "thickness of the base material" means the thickness of the whole base material, for example, the thickness of the base material composed of multiple layers means the total thickness of all the layers constituting the base material.

In order to improve the adhesiveness with other layers such as the first adhesive layer provided on the base material, the following treatments may be performed on the surface of the base material: sandblasting, solvent treatment, embossing treatment, etc. Concave and convex treatment; corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone-ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment and other oxidation treatments. In addition, the surface of the substrate can also be primed. In addition, the base material may also have the following layers: an antistatic coating layer, and a layer that prevents the base material from adhering to other sheets or prevents the base material from adhering to an adsorption table when the sheets for semiconductor device manufacturing are stacked and stored.

The base material may contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), and the like in addition to the main constituent materials such as the aforementioned resins.

The optical properties of the substrate are not particularly limited within the scope of not impairing the efficacy of the present invention. The substrate can also transmit laser light or energy rays, for example.

The base material can be produced by a known method. For example, a base material containing a resin (using a resin as a constituent material) can be produced by molding the aforementioned resin or a resin composition containing the aforementioned resin.

○First adhesive layer The aforementioned first adhesive layer is in the form of a sheet or a film, and contains an adhesive. The first adhesive layer can be formed using an adhesive composition containing the aforementioned adhesive. For example, the first adhesive layer can be formed on the target site by coating the adhesive composition on the surface to be formed with the first adhesive layer, and drying if necessary.

The coating of the adhesive composition may be carried out by a known method, for example, the use of an air knife coater, a blade coater, a bar coater, a gravure coater, a roll coater, a roll knife coater, Curtain coater, die coater, blade coater, screen coater, Meyer bar coater, light touch coater and other coating methods.

The drying conditions of the adhesive composition are not particularly limited. When the adhesive composition contains the solvent described later, it is preferably heated and dried. In this case, for example, it is preferably 70°C to 130°C for 10 seconds. Dry to 5 minutes.

Examples of the aforementioned adhesive include adhesive resins such as acrylic resins, urethane resins, rubber-based resins, polysiloxane resins, epoxy-based resins, polyvinyl ethers, polycarbonates, and ester-based resins. Preferred are acrylic resins.

In addition, in this specification, "adhesive resin" contains both the resin which has adhesiveness, and the resin which has adhesiveness. For example, the aforementioned adhesive resins include not only resins having adhesiveness themselves, but also resins that exhibit adhesiveness by being used in combination with other components such as additives, or resins that exhibit adhesiveness due to the presence of heat or water. resin, etc.

The first adhesive layer may be either curable or non-curable, for example, energy ray curable and non-energy ray curable. The hardening first adhesive layer can easily adjust the physical properties of the first adhesive layer before and after hardening.

In this specification, the term "energy line" refers to an electromagnetic wave or a charged particle beam having energy quanta. Examples of energy rays include ultraviolet rays, radiation, electron beams, and the like. The ultraviolet rays can be irradiated by using, for example, a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light, or an LED (Light Emitting Diode; light emitting diode) lamp or the like as an ultraviolet source. The electron beam may be irradiated by an electron beam accelerator or the like. In addition, in this specification, "energy-beam curability" means the property of hardening by irradiation with energy rays, and "non-energy-beam hardenability" means the property of not hardening even when irradiated with energy rays.

The first adhesive layer may be composed of only one layer (single layer), or may be composed of two or more layers. When composed of multiple layers, these layers may be the same or different from each other, and the combination of these layers is not particularly limited.

The thickness of the first adhesive layer is preferably 1 μm to 100 μm, more preferably 1 μm to 60 μm, and particularly preferably 1 μm to 30 μm. Here, the so-called "thickness of the first adhesive layer" refers to the thickness of the entire first adhesive layer, for example, the thickness of the first adhesive layer composed of multiple layers refers to all the layers constituting the first adhesive layer total thickness.

The optical properties of the adhesive layer are not particularly limited within the scope of not impairing the efficacy of the present invention. For example, the first adhesive layer can also penetrate the energy rays. Next, the aforementioned adhesive composition will be described. In the following description of the adhesive composition, the first adhesive layer may be abbreviated as "adhesive layer" in some cases. The following adhesive composition can contain, for example, one or more of the following components so that the total content (mass %) does not exceed 100 mass %.

[Adhesive composition] When the adhesive layer is energy ray curable, as the adhesive composition containing the energy ray curable adhesive, that is, the energy ray curable adhesive composition, for example, the following adhesive compositions can be cited: Adhesive composition (I-1), containing non-energy ray curable adhesive resin (I-1a) (hereinafter sometimes referred to as "adhesive resin (I-1a)"), and energy ray curable compound; Adhesive composition (I-2), energy ray-curable adhesive resin (I-2a) containing unsaturated groups introduced into the side chain of non-energy ray-curable adhesive resin (I-1a) (hereinafter Sometimes abbreviated as "adhesive resin (I-2a)"); and an adhesive composition (I-3) containing the aforementioned adhesive resin (I-2a) and an energy ray curable compound.

[Adhesive composition (I-1)] As mentioned above, the said adhesive composition (I-1) contains the non-energy-ray-curable adhesive resin (I-1a) and an energy-ray-curable compound.

[Adhesive resin (I-1a)] The aforementioned adhesive resin (I-1a) is preferably an acrylic resin. As said acrylic resin, the acrylic polymer which has a structural unit derived from (meth)acrylic acid alkyl ester at least is mentioned, for example. The structural unit which the said acrylic resin has may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these structural units can be selected arbitrarily.

The adhesive resin (I-1a) contained in the adhesive composition (I-1) may be only one type or two or more types, and in the case of two or more types, these adhesive resins (I-1a) The combination and ratio can be selected arbitrarily.

In the adhesive composition (I-1), the ratio of the content of the adhesive resin (I-1a) to the total mass of the adhesive composition (I-1) is preferably 5% by mass to 99% by mass, more 10 to 95 mass % is preferable, and 15 to 90 mass % is particularly preferable.

[Energy ray hardening compound] Examples of the energy-ray-curable compound contained in the adhesive composition (I-1) include monomers and oligomers that have energy-ray-polymerizable unsaturated groups and can be cured by energy-ray irradiation. Among the energy ray curable compounds, examples of monomers include trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate (meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol (meth)acrylate and other polyvalent (meth)acrylates; (meth)acrylate aminomethyl Polyester (meth)acrylate; Polyether (meth)acrylate; Epoxy (meth)acrylate, etc. Among the energy ray curable compounds, examples of the oligomers include oligomers obtained by polymerizing the monomers exemplified above. The energy ray curable compound is preferably a (meth)acrylate urethane, a (meth)acrylate urethane in terms of a relatively large molecular weight that does not easily reduce the storage elastic modulus of the adhesive layer ester oligomers.

The aforementioned energy ray curable compound contained in the adhesive composition (I-1) may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these energy ray curable compounds may be Free to choose.

In the adhesive composition (I-1), the ratio of the content of the aforementioned energy ray curable compound to the total mass of the adhesive composition (I-1) is preferably 1% by mass to 95% by mass, more preferably 5% by mass to 90% by mass, particularly preferably 10% by mass to 85% by mass.

[Crosslinking agent] When the aforementioned acrylic polymer having a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an alkyl (meth)acrylate is used as the adhesive resin (I-1a), The adhesive composition (I-1) preferably further contains a crosslinking agent.

For example, the above-mentioned crosslinking agent reacts with the above-mentioned functional group to crosslink the adhesive resins (I-1a) to each other. Examples of the crosslinking agent include isocyanate-based crosslinking agents (crosslinking agents having an isocyanate group) such as tolylene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts of these diisocyanates; Epoxy-based cross-linking agents such as ethylene glycol glycidyl ether (cross-linking agents with a glycidyl group); Cross-linking agent (cross-linking agent with aziridine group); metal chelate-based cross-linking agent such as aluminum chelate (cross-linking agent with metal chelate structure); isocyanurate-based cross-linking agent (crosslinking agent with isocyanuric acid skeleton) etc. The cross-linking agent is preferably an isocyanate-based cross-linking agent in terms of improving the cohesion of the adhesive and improving the adhesive force of the adhesive layer, as well as being easy to obtain.

The cross-linking agent contained in the adhesive composition (I-1) may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these cross-linking agents can be arbitrarily selected.

In the case of using a cross-linking agent, in the aforementioned adhesive composition (I-1), the content of the cross-linking agent is preferably 0.01 parts by mass to 100 parts by mass of the content of the adhesive resin (I-1a). 50 parts by mass, more preferably 0.1 to 20 parts by mass, particularly preferably 0.3 to 15 parts by mass.

[Photopolymerization initiator] The adhesive composition (I-1) may further contain a photopolymerization initiator. Even if the adhesive composition (I-1) containing the photopolymerization initiator is irradiated with energy rays with relatively low energy such as ultraviolet rays, the curing reaction is sufficiently carried out.

Examples of the photopolymerization initiator include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ether; Acetophenones such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, 2,2-dimethoxy-1,2-diphenylethane-1-one, etc. Compounds; benzyl phosphine oxide compounds such as bis(2,4,6-trimethylbenzyl)phenylphosphine oxide, 2,4,6-trimethylbenzyldiphenylphosphine oxide; benzyl Sulfide compounds such as phenyl sulfide and tetramethylthiuram monosulfide; α-keto alcohol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; diocene such as titanocene Titanium compounds; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]acetone; 2-chloroanthraquinone, etc. Moreover, as said photoinitiator, quinone compounds, such as 1-chloroanthraquinone, etc.; photosensitizers, such as an amine, etc. can also be used, for example.

The photopolymerization initiator contained in the adhesive composition (I-1) may be only one kind or two or more kinds. In the case of two or more kinds, the combination and ratio of these photopolymerization initiators can be arbitrary. choose.

In the case of using a photopolymerization initiator, in the adhesive composition (I-1), the content of the photopolymerization initiator is preferably 0.01 part by mass relative to 100 parts by mass of the aforementioned energy ray curable compound to 20 parts by mass, more preferably 0.03 to 10 parts by mass, particularly preferably 0.05 to 5 parts by mass.

[Other additives] The adhesive composition (I-1) may also contain other additives that are not equivalent to any of the above-mentioned components within the scope of not impairing the efficacy of the present invention. Examples of the other additives include antistatic agents, antioxidants, softeners (plasticizers), fillers (fillers), rust inhibitors, colorants (pigments, dyes), sensitizers, tackifiers, Well-known additives such as reaction retarders and crosslinking accelerators (catalysts).

In addition, the so-called reaction retarder is used to suppress, for example, the action of a catalyst mixed into the adhesive composition (I-1), and the non-targeted reaction in the adhesive composition (I-1) during storage is suppressed. components of the cross-linking reaction. As a reaction retarder, the thing which forms a chelate complex by the chelate compound with respect to a catalyst is mentioned, for example, More specifically, the thing which has 2 or more carbonyl groups (-C(=O)-) in one molecule is mentioned.

The other additives contained in the adhesive composition (I-1) may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these other additives can be arbitrarily selected.

The content of other additives in the adhesive composition (I-1) is not particularly limited, and may be appropriately selected according to the type of the other additives.

[solvent] The adhesive composition (I-1) may contain a solvent. In the adhesive composition (I-1), the coating suitability to the coating target surface is improved by containing the solvent.

The aforementioned solvent is preferably an organic solvent.

[Adhesive composition (I-2)] As described above, the aforementioned adhesive composition (I-2) contains the energy ray-curable adhesive resin (I-1a) having an unsaturated group introduced into the side chain of the non-energy ray-curable adhesive resin (I-1a). -2a).

[Adhesive resin (I-2a)] The aforementioned adhesive resin (I-2a) is obtained, for example, by reacting an unsaturated group-containing compound having an energy ray polymerizable unsaturated group with a functional group in the adhesive resin (I-1a).

The aforementioned unsaturated group-containing compound has, in addition to the aforementioned energy ray polymerizable unsaturated group, the ability to bond with the adhesive resin (I-1a) by reacting with the functional group in the adhesive resin (I-1a). based compounds. Examples of the energy ray polymerizable unsaturated group include (meth)acryloyl, vinyl (ethenyl), allyl (2-propenyl), and the like, preferably (methyl) Acryloyl. Examples of groups that can be bonded to functional groups in the adhesive resin (I-1a) include isocyanate groups and glycidyl groups that can be bonded to hydroxyl groups or amino groups, and carboxyl groups or epoxy groups that can be bonded. The hydroxyl and amine groups, etc.

As said unsaturated group containing compound, (meth)acryloyl oxyethyl isocyanate, (meth)acryloyl isocyanate, glycidyl (meth)acrylate, etc. are mentioned, for example.

The adhesive resin (I-2a) contained in the adhesive composition (I-2) may be only one type, or two or more types. In the case of two or more types, these adhesive resins (I-2a) The combination and ratio can be selected arbitrarily.

In the adhesive composition (I-2), the ratio of the content of the adhesive resin (I-2a) to the total mass of the adhesive composition (I-2) is preferably 5% by mass to 99% by mass, more 10 to 95 mass % is preferable, and 10 to 90 mass % is particularly preferable.

[Crosslinking agent] For example, when the aforementioned acrylic polymer having a structural unit derived from a functional group-containing monomer is used as the adhesive resin (I-2a) as in the adhesive resin (I-1a), the adhesive composition ( I-2) may further contain a crosslinking agent.

As the above-mentioned crosslinking agent in the adhesive composition (I-2), the same ones as those in the adhesive composition (I-1) can be mentioned. The cross-linking agent contained in the adhesive composition (I-2) may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these cross-linking agents can be arbitrarily selected.

In the case of using a cross-linking agent, in the aforementioned adhesive composition (I-2), the content of the cross-linking agent is preferably 0.01 parts by mass to 100 parts by mass of the content of the adhesive resin (I-2a). 50 parts by mass, more preferably 0.1 to 20 parts by mass, particularly preferably 0.3 to 15 parts by mass.

[Photopolymerization initiator] The adhesive composition (I-2) may further contain a photopolymerization initiator. Even if the adhesive composition (I-2) containing the photopolymerization initiator is irradiated with relatively low-energy energy rays such as ultraviolet rays, the curing reaction is sufficiently carried out.

As the photopolymerization initiator in the adhesive composition (I-2), the same ones as the photopolymerization initiator in the adhesive composition (I-1) can be mentioned. The photopolymerization initiator contained in the adhesive composition (I-2) may be only one kind or two or more kinds. In the case of two or more kinds, the combination and ratio of these photopolymerization initiators can be arbitrary. choose.

When a photopolymerization initiator is used, in the adhesive composition (I-2), the content of the photopolymerization initiator is preferably 0.01 relative to 100 parts by mass of the adhesive resin (I-2a) Parts by mass to 20 parts by mass, more preferably 0.03 parts by mass to 10 parts by mass, particularly preferably 0.05 parts by mass to 5 parts by mass.

[Other additives and solvents] The adhesive composition (I-2) may also contain other additives that are not equivalent to any of the above-mentioned components within the scope of not impairing the efficacy of the present invention. In addition, the adhesive composition (I-2) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1). As the other additives and the solvent in the adhesive composition (I-2), the same ones as those in the adhesive composition (I-1) can be mentioned, respectively. The other additives and solvents contained in the adhesive composition (I-2) may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these other additives and vehicles can be selected arbitrarily. . The content of the other additives and the solvent in the adhesive composition (I-2) is not particularly limited, and may be appropriately selected according to the types of the other additives and the solvent.

[Adhesive composition (I-3)] As mentioned above, the said adhesive composition (I-3) contains the said adhesive resin (I-2a) and an energy ray curable compound.

In the adhesive composition (I-3), the ratio of the content of the adhesive resin (I-2a) to the total mass of the adhesive composition (I-3) is preferably 5% by mass to 99% by mass, more 10 to 95 mass % is preferable, and 15 to 90 mass % is particularly preferable.

[Energy ray hardening compound] Examples of the energy ray curable compound contained in the adhesive composition (I-3) include monomers and oligomers which have an energy ray polymerizable unsaturated group and can be cured by irradiation with energy rays, and examples include The same as the energy ray curable compound contained in the adhesive composition (I-1). The aforementioned energy ray curable compound contained in the adhesive composition (I-3) may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these energy ray curable compounds may be Free to choose.

In the aforementioned adhesive composition (I-3), the content of the aforementioned energy ray curable compound is preferably 0.01 to 300 parts by mass relative to 100 parts by mass of the content of the adhesive resin (I-2a), more preferably It is 0.03 to 200 parts by mass, particularly preferably 0.05 to 100 parts by mass.

[Photopolymerization initiator] The adhesive composition (I-3) may further contain a photopolymerization initiator. Even if the adhesive composition (I-3) containing the photopolymerization initiator is irradiated with relatively low-energy energy rays such as ultraviolet rays, the curing reaction is sufficiently carried out.

As the photopolymerization initiator in the adhesive composition (I-3), the same ones as the photopolymerization initiator in the adhesive composition (I-1) can be mentioned. The photopolymerization initiator contained in the adhesive composition (I-3) may be only one kind or two or more kinds. In the case of two or more kinds, the combination and ratio of these photopolymerization initiators can be arbitrary. choose.

In the case of using a photopolymerization initiator, in the adhesive composition (I-3), with respect to 100 parts by mass of the total content of the adhesive resin (I-2a) and the aforementioned energy ray curable compound, the photopolymerization initiator The content of the starting agent is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, particularly preferably 0.05 to 5 parts by mass.

[Other additives and solvents] The adhesive composition (I-3) may also contain other additives that are not equivalent to any of the above-mentioned components within the scope of not impairing the efficacy of the present invention. In addition, the adhesive composition (I-3) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1). As the other additives and the solvent in the adhesive composition (I-3), the same ones as those in the adhesive composition (I-1) can be mentioned, respectively. The other additives and solvents contained in the adhesive composition (I-3) may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these other additives and vehicles can be selected arbitrarily. . The content of the other additives and the solvent of the adhesive composition (I-3) is not particularly limited, and may be appropriately selected according to the types of the other additives and the solvent.

[Adhesive composition (I-1) to adhesive compositions other than adhesive composition (I-3)] So far, the adhesive composition (I-1), the adhesive composition (I-2), and the adhesive composition (I-3) have been mainly described, but the components contained in these adhesive compositions are described below. The description can also be used for all adhesive compositions other than these three adhesive compositions (in this specification, referred to as "adhesive composition (I-1) to adhesive composition (I-3) other than the adhesive composition").

As the adhesive composition other than the adhesive composition (I-1) to the adhesive composition (I-3), in addition to the energy ray curable adhesive composition, a non-energy ray curable adhesive composition can also be mentioned composition. Examples of non-energy ray-curable adhesive compositions include acrylic resins, urethane resins, rubber-based resins, silicone resins, epoxy-based resins, polyvinyl ethers, polycarbonates, and ester-based resins. The adhesive composition (I-4) of the non-energy ray-curable adhesive resin (I-1a) such as resin preferably contains an acrylic resin.

The adhesive compositions other than the adhesive composition (I-1) to the adhesive composition (I-3) preferably contain one or two or more cross-linking agents, and the content of the cross-linking agents can be set to the same as the above. The same applies to the adhesive composition (I-1) and the like.

[Adhesive composition (I-4)] As a preferable thing in an adhesive composition (I-4), the adhesive composition containing the said adhesive resin (I-1a) and a crosslinking agent is mentioned, for example.

[Adhesive resin (I-1a)] As the adhesive resin (I-1a) in the adhesive composition (I-4), the same ones as the adhesive resin (I-1a) in the adhesive composition (I-1) can be mentioned. The adhesive resin (I-1a) contained in the adhesive composition (I-4) may be only one type or two or more types. In the case of two or more types, these adhesive resins (I-1a) The combination and ratio can be selected arbitrarily.

In the adhesive composition (I-4), the ratio of the content of the adhesive resin (I-1a) to the total mass of the adhesive composition (I-4) is preferably 5% by mass to 99% by mass, more 10 to 95 mass % is preferable, and 15 to 90 mass % is particularly preferable.

[Crosslinking agent] In the case of using the aforementioned acrylic polymer having a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an alkyl (meth)acrylate as the adhesive resin (I-1a), the adhesive The composition (I-4) preferably further contains a crosslinking agent.

As the crosslinking agent in the adhesive composition (I-4), the same crosslinking agent as the crosslinking agent in the adhesive composition (I-1) can be mentioned. The cross-linking agent contained in the adhesive composition (I-4) may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these cross-linking agents can be arbitrarily selected.

In the aforementioned adhesive composition (I-4), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass relative to 100 parts by mass of the content of the adhesive resin (I-1a), more preferably 0.1 parts by mass parts to 25 parts by mass, particularly preferably 0.1 parts to 10 parts by mass.

[Other additives and solvents] The adhesive composition (I-4) may also contain other additives that are not equivalent to any of the above-mentioned components within the scope of not impairing the efficacy of the present invention. In addition, the adhesive composition (I-4) may contain a solvent for the same purpose as in the case of the adhesive composition (I-1). As the other additives and the solvent in the adhesive composition (I-4), the same ones as those in the adhesive composition (I-1) can be mentioned, respectively. The other additives and solvents contained in the adhesive composition (I-4) may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these other additives and vehicles can be selected arbitrarily. . The contents of the other additives and the solvent of the adhesive composition (I-4) are not particularly limited, respectively, and can be appropriately selected according to the types of the other additives and the solvent.

[Manufacturing method of adhesive composition] Adhesive composition (I-1) to adhesive composition (I-3) or adhesive composition (I-4) other than adhesive composition (I-1) to adhesive composition (I-3) The adhesive composition is obtained by blending the above-mentioned adhesive and components other than the above-mentioned adhesive as needed, which are used to form the adhesive composition. The order of addition at the time of preparing each component is not particularly limited, and two or more components may be added at the same time. In the case of using a solvent, it can be used by mixing the solvent with any formulation component other than the solvent by pre-diluting the formulation component, or by not pre-diluting any formulation component other than the solvent, and mixing the solvent with the solvent. These formulation components are mixed and used. The method of mixing the components during preparation is not particularly limited, and may be appropriately selected from the following well-known methods: a method of mixing by rotating a stirrer or a stirring blade; a method of mixing using a mixer; applying ultrasonic waves Methods of mixing, etc. The temperature and time at the time of addition and mixing of each component are not particularly limited as long as each compounded component is not deteriorated, and may be appropriately adjusted, and the temperature is preferably 15°C to 30°C.

○Intermediate layer The said intermediate layer is a sheet shape or a film shape, and contains resin. The intermediate layer may be composed of resin, and may contain resin and components other than resin. The intermediate layer can be formed, for example, by molding the above-mentioned resin or the composition for forming an intermediate layer containing the above-mentioned resin. Moreover, an intermediate layer can also be formed by apply|coating the said composition for intermediate layer formation to the formation object surface of an intermediate layer, and drying as needed.

The aforementioned resin as a constituent material of the intermediate layer is not particularly limited. As a preferable said resin in an intermediate layer, an ethylene vinyl acetate copolymer (EVA), a polypropylene (PP), a polyethylene (PE), a polyacrylate urethane (UA) etc. are mentioned, for example.

Content of the said resin of the said composition for intermediate layer formation is not specifically limited, For example, it can be set to any of 80 mass % or more, 90 mass % or more, and 95 mass % or more, and these are an example.

The intermediate layer may be composed of one layer (single layer), or may be composed of two or more layers. When composed of multiple layers, these layers may be the same or different from each other, and the combination of these layers is not particularly limited.

The intermediate layer can be processed by, for example, punching to be formed into any shape, and a circular shape is preferable.

As explained above, the maximum value of the width of the intermediate layer is preferably smaller than the maximum value of the width of the first adhesive layer and the maximum value of the width of the substrate. The maximum value of the width of the intermediate layer can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum value of the width of the intermediate layer may also be 150 mm to 160 mm, 200 mm to 210 mm, or 300 mm to 310 mm. These three numerical ranges correspond to a semiconductor wafer having a maximum width of 150 mm with respect to a direction parallel to the attachment surface of the sheet for semiconductor device manufacturing, a semiconductor wafer having a maximum width of 200 mm above, or the above A semiconductor wafer with a maximum width of 300mm. However, as described above, when the film adhesive is cut by spreading the sheet for semiconductor device manufacturing after the dicing accompanying the formation of the modified layer in the semiconductor wafer, the dicing will be described later. After that, a plurality of semiconductor wafers (semiconductor wafer groups) are grouped together, and the sheet for semiconductor device production is attached to these semiconductor wafers.

In this specification, unless otherwise specified, the "width of the intermediate layer" means, for example, "the width of the intermediate layer in a direction parallel to the first surface of the intermediate layer". For example, in the case of an intermediate layer whose plane shape is a circle, the maximum value of the width of the intermediate layer becomes the diameter of the circle in the plane shape. The same is true in the case of semiconductor wafers. That is, the "width of the semiconductor wafer" means "the width of the semiconductor wafer in the direction parallel to the attachment surface of the semiconductor device manufacturing sheet". For example, in the case of a semiconductor wafer whose planar shape is a circle, the maximum value of the width of the aforementioned semiconductor wafer becomes the diameter of the aforementioned planar shape.

The maximum value of the width of the intermediate layer of 150 mm to 160 mm means that the maximum value of the width of the semiconductor wafer is equivalent to 150 mm, or the range is not more than 10 mm. Likewise, the maximum value of the width of the intermediate layer of 200mm to 210mm is meant to be equivalent to the maximum value of the width of the semiconductor wafer of 200mm, or a range of not more than 10mm. Likewise, the maximum value of the width of the intermediate layer of 300 mm to 310 mm is meant to be equivalent to the maximum value of the width of the semiconductor wafer of 300 mm, or a range of not more than 10 mm. That is, in this embodiment, no matter which of the maximum width of the semiconductor wafer is 150 mm, 200 mm and 300 mm, the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer can be, for example, 0. to 10mm. When the maximum value of the width of the intermediate layer satisfies such a condition, when the film adhesive is cut by the expansion of the semiconductor device manufacturing sheet, the effect of suppressing the unexpected scattering of the film adhesive after cutting is enhanced. .

The thickness of the intermediate layer can be appropriately selected according to the purpose, and may be 10 μm or more, 10 μm to 150 μm, 15 μm to 120 μm, 15 μm to 90 μm, or 15 μm to 60 μm. Alternatively, it may be 30 μm to 120 μm, or 60 μm to 120 μm. By making the thickness of the intermediate layer more than the aforementioned lower limit value, the structure of the intermediate layer becomes more stable. When the thickness of the intermediate layer is below the aforementioned upper limit value, the film-like adhesive can be cut more easily at the time of blade dicing or at the time of spreading of the sheet for semiconductor device manufacturing. Here, the "thickness of the intermediate layer" means the thickness of the entire intermediate layer, for example, the thickness of the intermediate layer composed of multiple layers means the total thickness of all the layers constituting the intermediate layer.

○Film adhesive The film-like adhesive has curability, preferably thermosetting, and preferably pressure-sensitive adhesive. A film-like adhesive that has both thermosetting properties and pressure-sensitive adhesive properties can be attached to various adherends by light pressing in an uncured state. In addition, the film adhesive can be softened by heating and attached to various adherends. The film adhesive finally becomes a cured product with high impact resistance by curing, and the cured product can still maintain sufficient adhesion properties under severe high temperature and high humidity conditions.

The film-like adhesive can be processed into any shape by, for example, pressing.

When the wafer for semiconductor device manufacturing is viewed from above, the area of the film-like adhesive (that is, the area of the first surface) is preferably set to be smaller than the base so as to be close to the area of the semiconductor wafer before division. The area of the material (that is, the area of the first side) and the area of the first adhesive layer (that is, the area of the first side). In such a sheet for manufacturing a semiconductor device, in a part of the first surface of the first adhesive layer, there is a region (that is, the non-lamination region) that is not in contact with the intermediate layer and the film-like adhesive. Thereby, expansion of the sheet for semiconductor device manufacturing becomes easier, and the force applied to the film-like adhesive during expansion is not dispersed, so that the film-like adhesive can be cut more easily.

The film-like adhesive can be formed using an adhesive composition containing the constituent materials of the film-like adhesive. For example, the film-like adhesive can be formed on the target site by applying the adhesive composition to the surface to be formed with the film-like adhesive, and drying it if necessary.

The application of the adhesive composition can be performed by the same method as in the case of the above-mentioned application of the adhesive composition.

The drying conditions of the adhesive composition are not particularly limited. In the case of containing the solvent described later, the adhesive composition is preferably dried by heating, and in this case, for example, it is preferably dried at 70° C. to 130° C. for 10 seconds to 5 minutes.

The film-like adhesive may be composed of one layer (single layer), or may be composed of two or more layers. When composed of multiple layers, these layers may be the same or different from each other, and the combination of these layers is not particularly limited.

As explained above, the maximum value of the width of the film adhesive is smaller than the maximum value of the width of the first adhesive layer and the maximum value of the width of the substrate. The maximum value of the width of the film adhesive may also be the same as the maximum value of the width of the interlayer described above with respect to the size of the semiconductor wafer. That is, the maximum value of the width of the film-like adhesive can be appropriately selected in consideration of the size of the semiconductor wafer. For example, the maximum value of the width of the film adhesive may also be 150 mm to 160 mm, 200 mm to 210 mm, or 300 to 310 mm. These three numerical ranges correspond to a semiconductor wafer having a maximum width of 150 mm with respect to a direction parallel to the attachment surface of the sheet for semiconductor device manufacturing, a semiconductor wafer having a maximum width of 200 mm above, or the above A semiconductor wafer with a maximum width of 300mm.

In this specification, unless otherwise specified, the "width of the film-like adhesive" means, for example, "the width of the film-like adhesive in a direction parallel to the first surface of the film-like adhesive". For example, in the case of a film-like adhesive whose plane shape is a circle, the maximum value of the width of the film-like adhesive becomes the diameter of the circle of the plane shape. In addition, unless otherwise specified, the "width of the film-like adhesive" means "the film-like adhesive before cutting (uncut) in the process of manufacturing a semiconductor wafer with the film-like adhesive, which will be described later. width” rather than the width of the film adhesive after cutting.

The maximum value of the width of the film adhesive of 150 mm to 160 mm means that the maximum value of the width of the semiconductor wafer of 150 mm is the same, or a range of not more than 10 mm. Likewise, the maximum value of the width of the film adhesive of 200 mm to 210 mm means that the maximum value of the width of the semiconductor wafer of 200 mm is the same, or a range of not more than 10 mm. Likewise, the maximum value of the width of the film adhesive of 300 mm to 310 mm means that the maximum value of the width of the semiconductor wafer of 300 mm is the same, or a range not exceeding 10 mm. That is, in the present embodiment, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm or 300 mm, the difference between the maximum width of the film adhesive and the maximum width of the semiconductor wafer may be any difference. For example, 0 mm to 10 mm. By satisfying such a condition by the maximum value of the width of the film-like adhesive, when the film-like adhesive is cut by the expansion of the aforementioned semiconductor device manufacturing sheet, the effect of suppressing the unexpected scattering of the film-like adhesive after cutting is achieved. will improve.

In this embodiment, the maximum value of the width of the intermediate layer and the maximum value of the width of the film adhesive may be any of the above-mentioned numerical ranges. That is, as an example of the sheet for manufacturing a semiconductor device of the present embodiment, the maximum value of the width of the intermediate layer and the maximum value of the width of the film adhesive are both 150 mm to 160 mm, 200 mm to 210 mm, or 300 mm to 310 mm. .

The thickness of the film adhesive is not particularly limited, but is preferably 1 μm to 30 μm, more preferably 2 μm to 20 μm, and particularly preferably 3 μm to 10 μm. When the thickness of the film-like adhesive is more than the aforementioned lower limit value, a higher adhesive force to the adherend (semiconductor wafer) can be obtained. When the thickness of the film-like adhesive is below the above-mentioned upper limit value, the film-like adhesive can be cut more easily at the time of blade dicing or the above-mentioned expansion of the sheet for semiconductor device manufacturing. Here, the "thickness of the film adhesive" means the thickness of the entire film adhesive, for example, the thickness of the film adhesive composed of multiple layers means the total thickness of all layers constituting the film adhesive.

In this embodiment, the total thickness of the intermediate layer and the film adhesive is preferably 15 μm or more, more preferably 20 μm to 180 μm, further preferably 30 μm to 140 μm, and particularly preferably 50 μm to 130 μm. When the total thickness is equal to or more than the aforementioned lower limit value, the risk of breakage during removal of useless portions during press working is reduced. When the total thickness is below the aforementioned upper limit value, there is a tendency that the effect of preventing smearing is excellent. Furthermore, when the sheet for manufacturing a semiconductor device of the embodiment does not have an intermediate layer, the total thickness of the intermediate layer and the film-like adhesive may mean the thickness of only the film-like adhesive, and the thickness of the film-like adhesive may be It may be 15 μm or more, 15 μm to 30 μm, or 15 μm to 20 μm.

The intermediate layer and the film-like adhesive may have the same shape, but the intermediate layer and the film-like adhesive are preferably laminated so that the outer peripheries of the top-view shapes of these layers are the same.

Next, the aforementioned adhesive composition will be described. The following adhesive composition may contain, for example, one or more of the following components so that the total content (mass %) does not exceed 100 mass %.

[Adhesive composition] As a preferable adhesive composition, what contains a polymer component (a) and a thermosetting resin is mentioned, for example. Hereinafter, each component is demonstrated. In addition, the adhesive composition shown below is a preferable example, and the adhesive composition in this embodiment is not limited to what is shown below.

[Polymer component (a)] The polymer component (a) is regarded as a component formed by a polymerization reaction of a polymerizable compound, and is used to impart film-forming properties, flexibility, etc. to a film-like adhesive, and to improve the adhesion to an object to be bonded such as a semiconductor wafer. Properties (in other words, adhesive properties) of polymer compounds. The polymer component (a) has thermoplastic properties and does not have thermosetting properties.

The polymer component (a) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these polymer components (a) Can be arbitrarily selected.

As a polymer component (a), an acrylic resin, a urethane resin, a phenoxy resin, a silicone resin, a saturated polyester resin, etc. are mentioned, for example, Preferably it is an acrylic resin. As said acrylic resin, a well-known acrylic polymer is mentioned.

In the adhesive composition, the ratio of the content of the polymer component (a) to the total content of all components other than the solvent (that is, the content of the polymer component (a) in the film adhesive relative to the film adhesive) The ratio of the total mass of the agent) is preferably 20% by mass to 75% by mass, more preferably 30% by mass to 65% by mass.

[Thermosetting ingredient] A thermosetting component is a component for forming a hard protective film by hardening the film for thermosetting protective film formation. The thermosetting components contained in the adhesive composition may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these thermosetting components can be arbitrarily selected.

As a thermosetting component, an epoxy type thermosetting resin, a polyimide type resin, an unsaturated polyester resin etc. are mentioned, for example, Preferably it is an epoxy type thermosetting resin.

[Epoxy thermosetting resin (b)] The epoxy-based thermosetting resin (b) is included in the concept of the above-mentioned thermosetting component, has thermosetting properties, and is a component for thermosetting a film-like adhesive. The epoxy-based thermosetting resin (b) is composed of an epoxy resin (b1) and a thermosetting agent (b2). The epoxy-based thermosetting resin (b) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types, and in the case of two or more types, these epoxy type thermosetting resins (b) The combination and ratio of resin (b) can be arbitrarily selected.

·Epoxy resin (b1) As the epoxy resin (b1), known ones can be mentioned, for example, polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenated products, o-cresol novolak epoxy resins, Cyclopentadiene type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin, etc., epoxy compounds with more than two functions.

As the epoxy resin (b1), an epoxy resin having an unsaturated hydrocarbon group can also be used. The epoxy resin having an unsaturated hydrocarbon group has a higher mutual solubility with the acrylic resin than the epoxy resin having no unsaturated hydrocarbon group. Therefore, by using the epoxy resin which has an unsaturated hydrocarbon group, the reliability of the package obtained by using a film adhesive improves.

The epoxy resin (b1) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these epoxy resins (b1) Can be arbitrarily selected.

· Thermal hardener (b2) The thermosetting agent (b2) functions as a curing agent for the epoxy resin (b1). As a thermosetting agent (b2), the compound which has two or more functional groups which can react with an epoxy group in one molecule is mentioned, for example. Examples of the functional group include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and acid anhydride groups. Preferably, phenolic hydroxyl groups, amino groups, or acid groups are acid anhydride groups, and more preferably For phenolic hydroxyl or amine group.

Among the thermosetting agents (b2), examples of the phenol-based curing agent having a phenolic hydroxyl group include polyfunctional phenol resins, biphenols, novolak-type phenol resins, dicyclopentadiene-type phenol resins, and aralkyl-type phenol resins. Phenolic resin, etc. In a thermosetting agent (b2), as an amine type hardening agent which has an amine group, dicyandiamine (DICY) etc. are mentioned, for example.

The thermal hardener (b2) may have an unsaturated hydrocarbon group.

The thermosetting agent (b2) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these thermosetting agents (b2) Can be arbitrarily selected.

In the adhesive composition and the film adhesive, the content of the thermosetting agent (b2) is preferably 0.1 to 500 parts by mass relative to 100 parts by mass of the epoxy resin (b1), more preferably 1 part by mass Parts to 200 parts by mass may be, for example, any of 1 part by mass to 100 parts by mass, 1 part by mass to 50 parts by mass, and 1 part by mass to 25 parts by mass. When the said content of a thermosetting agent (b2) is more than the said lower limit, hardening of a film adhesive becomes easier. When the said content of a thermosetting agent (b2) is below the said upper limit, the moisture absorption rate of a film adhesive falls, and the reliability of the package obtained using a film adhesive is further improved.

In the adhesive composition and the film-like adhesive, the content of the thermosetting resin (preferably epoxy-based thermosetting resin, that is, epoxy resin ( The total content of b1) and the thermosetting agent (b2)) is preferably 5 parts by mass to 100 parts by mass, more preferably 5 parts by mass to 75 parts by mass, particularly preferably 5 parts by mass to 50 parts by mass, such as Any of 5 parts by mass to 35 parts by mass and 5 parts by mass to 20 parts by mass. When the aforementioned content of the thermosetting resin is in such a range, the peeling force between the intermediate layer and the film-like adhesive becomes more stable.

In order to improve various physical properties of the film-like adhesive, the film-like adhesive may further contain other components not corresponding to these components in addition to the polymer component (a) and the thermosetting resin, if necessary. Preferable ones among the other components contained in the film adhesive include, for example, a curing accelerator (c), a filler (d), a coupling agent (e), a crosslinking agent (f), energy ray curing resin (g), photopolymerization initiator (h), general additive (i), etc.

[Hardening accelerator (c)] The hardening accelerator (c) is a component for adjusting the hardening rate of the adhesive composition. As a preferable hardening accelerator (c), tertiary grades, such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl)phenol, are mentioned, for example. Amines; 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl- Imidazoles such as 5-hydroxymethylimidazole (imidazoles in which one or more hydrogen atoms are substituted by groups other than hydrogen atoms); organic phosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine (more than one hydrogen atom) Phosphine substituted by an organic group); tetraphenyl boron salts such as tetraphenyl boron tetraphenyl phosphonium, tetraphenyl boron triphenyl phosphine, etc.

The hardening accelerator (c) contained in the adhesive composition and the film adhesive may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these hardening accelerators (c) Can be arbitrarily selected.

When the curing accelerator (c) is used, in the adhesive composition and the film adhesive, the content of the curing accelerator (c) is 100 parts by mass relative to the content of the epoxy-based thermosetting resin (b) of 100 parts by mass. It is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass. By making the said content of the hardening accelerator (c) more than the said lower limit, the effect obtained by using the hardening accelerator (c) can be acquired more remarkably. When the content of the hardening accelerator (c) is below the above-mentioned upper limit, for example, the high-polarity hardening accelerator (c) moves in the film adhesive under high temperature and high humidity conditions to the side of the bonding interface with the adherend. On the other hand, the effect of suppressing segregation becomes high, and the reliability of the package obtained by using the film adhesive is further improved. When the hardening accelerator (c) is not contained, the production of the film adhesive becomes easier.

[filler (d)] When the film adhesive contains the filler (d), the cutting property of the film adhesive by spreading is further improved. In addition, when the film-like adhesive contains the filler (d), the adjustment of the thermal expansion coefficient of the film-like adhesive becomes easy. The reliability of the package obtained by the adhesive is further improved. Moreover, when a film adhesive contains a filler (d), the moisture absorption rate of the film adhesive after hardening can also be reduced, or heat dissipation can be improved.

The filler (d) may be any of an organic filler and an inorganic filler, preferably an inorganic filler. As preferred inorganic fillers, for example, powders of silicon dioxide, alumina, talc, calcium carbonate, titanium dioxide, iron dan, silicon carbide, boron nitride, etc.; these inorganic fillers are spheroidized. Beads; surface modification products of these inorganic fillers; single crystal fibers of these inorganic fillers; glass fibers, etc. Among these, the inorganic filler is preferably silica or alumina.

The filler (d) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types. In the case of two or more types, the combination and ratio of these fillers (d) may be arbitrary. choose.

When the filler (d) is used, in the adhesive composition, the ratio of the content of the filler (d) to the total content of all components other than the solvent (that is, the filler ( The content of d) is preferably 5 to 80 mass %, more preferably 10 to 70 mass %, particularly preferably 20 to 60 mass %, relative to the total mass of the film adhesive. When the said ratio is such a range, the effect obtained by using the said filler (d) can be acquired more remarkably.

[Coupling agent (e)] When the film adhesive contains the coupling agent (e), the adhesiveness and adhesiveness to the adherend are improved. In addition, when the film-like adhesive contains the coupling agent (e), the water resistance of the cured product of the film-like adhesive is improved without impairing the heat resistance. The coupling agent (e) has a functional group capable of reacting with an inorganic compound or an organic compound.

The coupling agent (e) is preferably a compound having a functional group capable of reacting with the functional group possessed by the polymer component (a), the epoxy-based thermosetting resin (b), and the like, and is more preferably a silane coupling agent.

The coupling agent (e) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these coupling agents (e) may be arbitrary choose.

In the case of using the coupling agent (e), in the adhesive composition and the film-like adhesive, the amount of the coupling agent is 100 parts by mass relative to the total content of the polymer component (a) and the epoxy-based thermosetting resin (b) 100 parts by mass. The content of the mixture (e) is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, particularly preferably 0.1 to 5 parts by mass. When the above-mentioned content of the coupling agent (e) is more than the above-mentioned lower limit value, the dispersibility of the filler (d) in the resin, or the adhesion between the film-like adhesive and the adherend can be more significantly improved. The effect obtained by using the coupling agent (e). When the said content of a coupling agent (e) is below the said upper limit, generation|occurrence|production of outgas (outgas) is suppressed further.

[Crosslinking agent (f)] In the case of using a compound having functional groups such as vinyl group, (meth)acryloyl group, amine group, hydroxyl group, carboxyl group, isocyanate group, etc. which can be bonded to other compounds, such as the above-mentioned acrylic resin, as the polymer component (a) In this case, the adhesive composition and the film-like adhesive may contain a crosslinking agent (f). The cross-linking agent (f) is a component for cross-linking by bonding the aforementioned functional groups in the polymer component (a) with other compounds, and by performing cross-linking in this way, the initial stage of the film-like adhesive can be adjusted. Adhesion and cohesion.

Examples of the crosslinking agent (f) include organic polyvalent isocyanate compounds, organic polyvalent imine compounds, metal chelate-based crosslinking agents (crosslinking agents having a metal chelate structure), and aziridine-based crosslinking agents. agent (crosslinking agent with aziridine group), etc.

In the case of using an organic polyvalent isocyanate compound as the crosslinking agent (f), it is preferable to use a hydroxyl group-containing polymer as the polymer component (a). When the crosslinking agent (f) has an isocyanate group and the polymer component (a) has a hydroxyl group, the reaction between the crosslinking agent (f) and the polymer component (a) can be easily used in the film adhesive. Import cross-linked structures.

The cross-linking agent (f) contained in the adhesive composition and the film-like adhesive may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these cross-linking agents (f) Can be arbitrarily selected.

When the crosslinking agent (f) is used, in the adhesive composition, the content of the crosslinking agent (f) is preferably 0.01 to 20 parts by mass relative to 100 parts by mass of the content of the polymer component (a). parts, more preferably 0.1 to 10 parts by mass, particularly preferably 0.3 to 5 parts by mass. By making the said content of a crosslinking agent (f) more than the said lower limit, the effect obtained by using a crosslinking agent (f) can be acquired more remarkably. When the said content of a crosslinking agent (f) is below the said upper limit, the excess use of a crosslinking agent (f) is suppressed. When the cross-linking agent (f) is not contained, there is no need to wait for the cross-linking reaction, and the properties of the film-like adhesive are easily stabilized more quickly.

[Energy beam curable resin (g)] Since the adhesive composition and the film-like adhesive contain the energy ray-curable resin (g), the film-like adhesive can change the properties of the film-like adhesive by irradiation of the energy ray.

The energy ray curable resin (g) is obtained by polymerizing (hardening) an energy ray curable compound. As said energy-beam curable compound, the compound which has at least one polymerizable double bond in a molecule|numerator is mentioned, for example, Preferably it is an acrylate type compound which has a (meth)acryloyl group.

The energy ray-curable resin (g) contained in the adhesive composition may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these energy-ray-curable resins (g) may be Free to choose.

In the case of using the energy ray curable resin (g), in the adhesive composition, the ratio of the content of the energy ray curable resin (g) to the total mass of the adhesive composition is preferably 1% by mass to 95% by mass. % by mass, more preferably 5% by mass to 90% by mass, particularly preferably 10% by mass to 85% by mass.

[Photopolymerization initiator (h)] When the adhesive composition and the film-like adhesive contain the energy ray curable resin (g), in order to efficiently carry out the polymerization reaction of the energy ray curable resin (g), a photopolymerization initiator (h) may be contained. ).

Examples of the photopolymerization initiator (h) in the adhesive composition include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin Benzoin compounds such as dimethyl ether; acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, 2,2-dimethoxy-1,2-diphenylethane Acetophenone compounds such as -1-ketone; bis(2,4,6-trimethylbenzyl)phenylphosphine oxide, 2,4,6-trimethylbenzyldiphenylphosphine oxide, etc. Acyl phosphine oxide compounds; sulfide compounds such as benzyl phenyl sulfide and tetramethylthiuram monosulfide; α-keto alcohol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo bisisobutyronitrile and other azo compounds Compounds; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzoyl; dibenzoyl; benzophenone; 2,4 -Diethylthioxanthone; 1,2-Diphenylmethane; 2-Hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]acetone; 1-Chloranthraquinone, Quinone compounds such as 2-chloroanthraquinone, etc. Moreover, as a photoinitiator (h), photosensitizers, such as an amine, etc. are also mentioned, for example.

The photopolymerization initiator (h) contained in the adhesive composition may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these photopolymerization initiators (h) may be Free to choose.

When the photopolymerization initiator (h) is used, in the adhesive composition, the content of the photopolymerization initiator (h) is preferably 100 parts by mass relative to the content of the energy ray-curable resin (g). 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, particularly preferably 2 to 5 parts by mass.

[General Additives (i)] The general-purpose additive (i) may be a known one, and can be arbitrarily selected according to the purpose, and is not particularly limited. Preferred examples include plasticizers, antistatic agents, antioxidants, and colorants (dyes, pigments) , gettering agent, etc.

The general-purpose additive (i) contained in the adhesive composition and the film-like adhesive may be only one kind or two or more kinds, and in the case of two or more kinds, the combination and ratio of these general-purpose additives (i) can be arbitrary choose. The content of the adhesive composition and the film-like adhesive is not particularly limited, and may be appropriately selected according to the purpose.

[solvent] The adhesive composition preferably further contains a solvent. The workability of the adhesive composition containing the solvent is improved. The aforementioned solvent is not particularly limited, and preferred examples include hydrocarbons such as toluene and xylene; methanol, ethanol, 2-propanol, isobutanol (2-methylpropan-1-ol), and 1-butane. Alcohols such as alcohols; Esters such as ethyl acetate; Ketones such as acetone and methyl ethyl ketone; Ethers such as tetrahydrofuran; . The solvent contained in the adhesive composition may be only one type or two or more types, and in the case of two or more types, the combination and ratio of these vehicles can be arbitrarily selected.

The solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like, since the components contained in the adhesive composition can be mixed more uniformly.

The content of the solvent in the adhesive composition is not particularly limited, and may be appropriately selected, for example, according to the types of components other than the solvent.

[Manufacturing method of adhesive composition] The adhesive composition is obtained by blending the components for constituting the adhesive composition. The adhesive composition can be produced by the same method as in the case of the adhesive composition described above, for example, except that the types of the ingredients are different.

○Composite release film The composite release film of the embodiment is a laminate in which a release film, a second adhesive layer, and a support substrate are laminated in this order. The composite peeling film of the embodiment is peeled from the sheet for manufacturing a semiconductor device when using the sheet for manufacturing a semiconductor device of the embodiment that is attached to an object to be attached.

[Release film] Various resins are preferable as the constituent material of the release film, and those exemplified in the aforementioned base material are mentioned, and polyethylene terephthalate (PET) is preferable.

The thickness of the release film is preferably 25 μm or more, more preferably 30 μm or more, and still more preferably 35 μm or more. The upper limit value of the thickness of the peeling film is, for example, preferably 125 μm or less, more preferably 100 μm or less, and still more preferably 50 μm or less. As an example of the numerical range of the thickness of the said peeling film, it can be 25 micrometers or more and 125 micrometers or less, 30 micrometers or more and 100 micrometers or less, and 35 micrometers or more and 50 micrometers or less, for example. When the thickness of a peeling film is more than the said lower limit, when the sheet for semiconductor manufacturing is wound into a roll shape, it exists in the tendency to be excellent in the effect of preventing printing.

Here, the "thickness of the release film" means the thickness of the whole release film, for example, the thickness of the release film composed of multiple layers means the total thickness of all layers constituting the release film.

The release film may contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), etc., in addition to the main constituent materials such as the aforementioned resins.

The bonding surface of the release film and the film-like adhesive may also be treated with a surface release agent (eg, a polysiloxane-based release agent).

The tensile modulus of elasticity of the aforementioned release film is preferably 2GPa or more, preferably 2GPa to 5GPa, more preferably 2.5GPa to 4GPa. When the tensile modulus of elasticity of the release film is equal to or more than the aforementioned lower limit value, the effect of preventing smearing increases. When the tensile modulus of elasticity of the release film is equal to or less than the aforementioned upper limit value, selection of a material for the release film becomes easy.

The tensile modulus of elasticity of the aforementioned release film is measured under the following conditions in accordance with JIS K7161:1994 and JIS K7127:1999. Test piece: obtained by cutting the release film into 15 mm×140 mm. Test environment: 23°C, RH (Relative Humidity; relative humidity) 50%. Method: After setting the above-mentioned test piece in the tensile testing machine to a distance of 100 mm between the chucks, the test piece was stretched at a speed of 200 mm/min, and the tensile elastic modulus in the elastic deformation region was obtained according to the obtained stress-strain curve. number (Young's modulus).

The value expressed by the tensile modulus of elasticity [N/mm ² ]×the thickness of the release film [mm] of the release film is preferably 180 N/mm or more, preferably 180 N/mm or more and 625 N/mm or less, more preferably 200 N/mm or more and 500 N/mm or less, and more preferably 210 N/mm or more and 300 N/mm or less. When this value of a peeling film is more than the said lower limit value, the effect of preventing printing improves. The reason is that the harder and thicker the peeling film that can be said to be placed underneath becomes, the more the effect of being less likely to leave a print is improved. Selection of the material used as a peeling film becomes easy because this value of a peeling film is below the said upper limit.

In addition, the tensile elastic modulus here can be measured based on JISK7161:1994 and JISK7127:1999 similarly to the above. The unit can be converted by Pa=N/m ^{2 .}

[Second Adhesive Layer] The constitution and constituent materials of the second adhesive layer can include the constitutions and constituent materials described in the aforementioned first adhesive layer, and the detailed description of the constitution and constituent materials of the second adhesive layer is omitted. The thickness or shape of the second adhesive layer and the constitution of the first adhesive layer may be the same or different from each other. The constituent material of the second adhesive layer and the constituent material of the first adhesive layer may be the same or different from each other.

The second adhesive layer may be composed of one layer (single layer), or may be composed of two or more layers. When composed of multiple layers, these layers may be the same or different from each other, and the combination of these layers is not particularly limited.

The thickness of the second adhesive layer is preferably 2 μm or more, more preferably 5 μm or more, and still more preferably 10 μm or more. The upper limit of the thickness of the second adhesive layer is, for example, preferably 100 μm or less, more preferably 60 μm or less, and still more preferably 30 μm or less. As an example of the numerical range of the thickness of the second adhesive layer, for example, it may be 2 μm to 100 μm, 5 μm to 60 μm, and 10 μm to 30 μm. When the thickness of the second adhesive layer is equal to or greater than the aforementioned lower limit value, the buffering effect can be enhanced, and when the sheet for semiconductor manufacturing is wound into a roll shape, there is a tendency that the effect of preventing roll printing is excellent.

Here, the so-called "thickness of the second adhesive layer" refers to the thickness of the entire second adhesive layer, for example, the thickness of the second adhesive layer composed of multiple layers refers to all the layers constituting the second adhesive layer total thickness.

[Support Substrate] The constitution and constituent material of the supporting base material include the constitution and constituent material described in the aforementioned release film, and the detailed description of the constitution and constituent material of the supporting base material is omitted. The thickness, shape, etc. of the support substrate and the release film may be the same or different from each other. The constituent material of the support substrate and the constituent material of the release film may be the same or different from each other.

The thickness of the support substrate is preferably 12 μm or more, more preferably 15 μm or more, and still more preferably 20 μm or more. The upper limit of the thickness of the support substrate is, for example, preferably 125 μm or less, more preferably 100 μm or less, and still more preferably 50 μm or less. As an example of the numerical range of the thickness of the support substrate, for example, it may be 12 μm or more and 125 μm or less, 15 μm or more and 100 μm or less, or 20 μm or more and 50 μm or less. When the thickness of a support base material is more than the said lower limit, there exists a tendency for the effect of preventing a composite release film to be excellent in fracture|rupture.

Here, the "thickness of the supporting substrate" means the thickness of the entire supporting substrate, for example, the thickness of the supporting substrate composed of multiple layers means the total thickness of all layers constituting the supporting substrate.

The thickness of the composite release film of the embodiment is more than 38 μm, preferably 50 μm or more, and more preferably 65 μm or more. The upper limit of the thickness of the composite release film is, for example, preferably 350 μm or less, more preferably 260 μm or less, and still more preferably 130 μm or less. As an example of the numerical range of the thickness of the said composite release film, it may be more than 38 μm to 350 μm or less, 50 μm or more to 260 μm or less, or 65 μm or more to 130 μm or less.

In the case where the composite release film is composed of only the release film, the second adhesive layer and the supporting substrate layered in sequence, the so-called thickness of the composite release film can be the release film and the second adhesive layer. and the total thickness of the supporting substrate.

When the thickness of a composite release film is more than the said lower limit, generation|occurence|production of the said printing when the sheet for semiconductor device manufacture is wound into a roll shape can be suppressed effectively. When the thickness of the composite release film is below the above-mentioned upper limit value, when the sheet for semiconductor device manufacturing is wound into a roll shape, the step at the start of winding does not become too high, and the occurrence of semiconductor devices at the start of winding is prevented. Core marks caused by the total thickness of the manufacturing sheet. In addition, when the thickness of the composite release film is equal to or less than the above-mentioned upper limit value, when the composite release film is peeled off, the degree of bending that bends the composite release film can be increased, and the exposed surface of the film-like adhesive exposed by peeling the composite release film can be attached. The operation of attaching to the semiconductor wafer to be used, etc. becomes easy.

◇Roller body As one embodiment of the sheet for manufacturing a semiconductor device of the present invention, there is provided a roll body in which a substrate, a first adhesive layer, and The film-like adhesive is wound into a roll with the base material, the first adhesive layer, and the film-like adhesive serving as inner sides.

In the sheet for semiconductor device manufacture of the embodiment, an intermediate layer may be laminated between the first adhesive layer and the film-like adhesive. As an embodiment of the sheet for manufacturing a semiconductor device of the present invention, there is provided a roll body in which a base material, a first adhesive layer, The intermediate layer and the film-like adhesive are wound into a roll using the base material, the first adhesive layer, the intermediate layer, and the film-like adhesive as inner sides. "As the inner side" means toward the center side (core side) of the roll body.

6 is a cross-sectional view schematically showing a roll body according to an embodiment of the present invention, and shows a state in which the roll body is loosened and a part of the roll body is unfolded. The roll body 110 is formed by laminating the unit P including the base material 11 , the first adhesive layer 12 , the intermediate layer 13 and the film adhesive 14 on the composite release film 20 in two or more units, and the base material 11 is laminated in the unit P. The roll is wound with the unit P as the inner side so that the other side faces the center side (core side) of the roll body. The direction in which the roll is wound is the longitudinal direction of the elongated composite release film 20 . The number of windings of the roll body is not particularly limited, but it is preferably wound more than one turn so that at least a part of the sheet for semiconductor device manufacturing is overlapped on the aforementioned unit P.

One unit of the above-mentioned sheet for manufacturing a semiconductor device may be a portion containing a film-like adhesive for sticking once or one sticking object. In FIG. 6, each unit P includes a circular film-shaped adhesive 14, and the units P are two or more units continuously arranged at predetermined intervals. In one roll body, the components included in each unit P can be mutually processed into the same shape. As a preferred shape, the circular support sheet 1 , the circular intermediate layer 13 and the film adhesive 14 with a smaller diameter than the support sheet 1 are laminated in concentric circles.

The film-like adhesive 14 can be easily attached to a semiconductor wafer or the like (attachment object) and has adhesiveness, so that the film-like adhesive 14 is sandwiched between the composite release film 20 and the support sheet 1 . It is suitable for storage in a roll shape due to the structure between the two. The roll body is also suitable as a distribution form of the sheet for semiconductor device manufacturing.

A roll body can be manufactured by laminating|stacking a long composite release film, a base material, a 1st adhesive bond layer, an intermediate layer, and a film adhesive agent so that a positional relationship may correspond, for example.

◇Manufacturing method of sheet for semiconductor device manufacturing The said sheet for semiconductor device manufacture can be manufactured by laminating|stacking the said each layer so that a positional relationship may correspond. The method of forming each layer is as described above.

The aforementioned sheet for manufacturing a semiconductor device can be manufactured, for example, by preparing a substrate, a first adhesive layer, an intermediate layer, a film-like adhesive, a release film, a second adhesive layer, and a supporting substrate in advance, and These layers are laminated together in order to form a base material, a first adhesive layer, an intermediate layer, a film-like adhesive, a release film, a second adhesive layer, and a supporting base material. However, this method is an example of a method of manufacturing a sheet for semiconductor device manufacturing.

In addition, the above-mentioned sheet for manufacturing a semiconductor device may be manufactured by preliminarily preparing two or more types of intermediate laminates which are formed by laminating a plurality of layers to constitute the sheet for manufacturing a semiconductor device, and then laminating these intermediate layers. bodies are attached to each other. The configuration of the intermediate layered body can be arbitrarily selected as appropriate. For example, a first intermediate layered body having a structure in which a base material and a first adhesive layer are laminated; The second intermediate layered body of the laminated structure is manufactured by laminating the first adhesive layer in the first intermediate layered body and the intermediate layer in the second intermediate layered body to manufacture a semiconductor device manufacturing sheet. However, this manufacturing method is an example.

As a manufacturing method of the sheet|seat for semiconductor device manufacture which concerns on embodiment, the following method can be illustrated. A method for producing a sheet for manufacturing a semiconductor device, comprising: laminating the base material and the first adhesive layer to obtain a first intermediate laminate; and laminating the film adhesive, the release film, and the second adhesive The layers and the supporting substrate are sequentially laminated to obtain a second intermediate laminate; and the first intermediate laminate and the second intermediate laminate are bonded together.

When the sheet for manufacturing a semiconductor device of the embodiment has an intermediate layer laminated between the first adhesive layer and the film-like adhesive, the following method can be exemplified as a method of manufacturing the sheet for manufacturing a semiconductor device of the embodiment. A method of manufacturing a sheet for manufacturing a semiconductor device according to an embodiment includes laminating the base material and the first adhesive layer to obtain a first intermediate laminate, and laminating the intermediate layer, the film-like adhesive, and the release film. , the second adhesive layer and the supporting substrate are laminated in sequence to obtain a second intermediate laminate; and the first adhesive layer of the first intermediate laminate and the intermediate layer of the second intermediate laminate are laminated fit.

The manufacturing method of the sheet|seat for semiconductor device manufacture of the said embodiment may further comprise cutting into the said composite release film or a release film from the surface on which the said film adhesive agent was laminated|stacked, and forming a notch part in the said composite release film. It is preferable that the incision depth of the said incision part exceeds 25 micrometers.

In the above-mentioned second intermediate layered body, when the film adhesive and the intermediate layer are pressed, the film adhesive and the intermediate layer can be laminated on the release film, and the release film and the film adhesive can be laminated in this order. And the exposed surface of the release film of the laminated body of the intermediate layer is attached to the exposed surface of the second adhesive layer of the laminated body of the supporting base material and the second adhesive layer to form a composite release film, and the self-lamination has a film-like adhesive The side surface of the agent is subjected to the stamping process of the film adhesive and the intermediate layer. At this time, the film-like adhesive and the intermediate layer are cut into a desired shape by cutting the film-like adhesive and the intermediate layer to a depth greater than the total thickness of the intermediate layer, and a cut portion is also formed in the composite release film.

Alternatively, when the film adhesive and the intermediate layer are pressed in the second intermediate laminate, the film adhesive and the intermediate layer may be laminated on the release film from the side on which the film adhesive is laminated. After the film adhesive and the intermediate layer are stamped on the surface, on the exposed surface of the release film laminated with the release film, the film adhesive and the intermediate layer in sequence, the laminated support substrate and the second adhesive are attached. A composite release film is formed on the exposed surface of the second adhesive layer of the laminate of the adhesive layers. At this time, the film-like adhesive and the intermediate layer are cut into a desired shape by cutting the film-like adhesive and the intermediate layer to a depth greater than or equal to the total thickness of the intermediate layer, and a cut portion is also formed in the release film.

Alternatively, when the film adhesive and the intermediate layer are pressed in the second intermediate layered body, the film adhesive laminated on the release film and the intermediate layer laminated on the other release film may be used together. After each press-processing, the press-processed film adhesive and the intermediate layer are bonded to each other and laminated to obtain a second intermediate laminate. In each press-processed release film, a notch portion is formed in the same manner as in the above-mentioned case, but the release film in contact with the intermediate layer is removed when it is attached to the first intermediate layered body.

In this way, the object to be processed to form the cut portion in the release film can be exemplified: 1) a laminate of a composite release film or a release film and a film-like adhesive; or 2) a composite release film or a release film, a film-like adhesive, and A laminated body of an intermediate layer (eg, a second intermediate laminated body). The useless parts of the press-processed film adhesive and the intermediate layer can be appropriately removed before lamination with the first intermediate layered body.

As the shape of the film-like adhesive and the intermediate layer subjected to the stamping process, the shapes described above for the intermediate layer and the film-like adhesive can be exemplified. The shape can be set to correspond to the shape of a wafer or the like to which the film-like adhesive can be attached.

Here, it is preferable that the depth of the incision formed in the incision part of a composite peeling film exceeds 25 micrometers, and the numerical value exemplified above can be mentioned as a preferable numerical value. In the manufacturing method of the sheet for semiconductor device manufacturing according to the embodiment, by setting the depth of the incision to be more than 25 μm, even if the blade used for the punching is worn out, the film adhesive, or the film adhesive and the intermediate layer can be prevented. The punching becomes incomplete.

Furthermore, after the 1st intermediate laminated body and the 2nd intermediate laminated body are laminated|stacked, the press process of the said base material and the said 1st adhesive bond layer may be performed from the surface which laminated|stacked the base material side. At this time, the base material and the first pressure-sensitive adhesive layer are cut into a desired shape by cutting at a depth greater than the total thickness of the base material and the first pressure-sensitive adhesive layer. The shape can be set to correspond to the shape of the annular frame to which the first adhesive layer can be attached. In this case, the depth of the incision can be appropriately adjusted so as not to cut the intermediate layer, the film-like adhesive, and the composite release film. Alternatively, the intermediate layer and the film-like adhesive are not cut by cutting the base material and the first adhesive layer at a position outside the outer periphery of the plan-view shape of the intermediate layer and the film-like adhesive. When the shapes of the film adhesive and the intermediate layer are circular, the punching positions of the base material and the first adhesive layer are preferably concentric with the circular film adhesive and the intermediate layer, and are closer to the film. The outer periphery of the plan view shape of the adhesive agent and the intermediate layer is further to the outer side.

The sheet for semiconductor device manufacturing including the substrate, the first adhesive layer, the intermediate layer, the film adhesive, the release film, the second adhesive layer, and the layers other than the supporting substrate can be produced by the above-mentioned manufacturing method with an appropriate method. It is manufactured by adding the steps of forming and laminating the other layers in the timing sequence.

◇How to use a sheet for semiconductor device manufacturing (a method of manufacturing a semiconductor wafer with a film-like adhesive) The above-mentioned sheet for manufacturing a semiconductor device can be used in the manufacture of a semiconductor wafer with a film-like adhesive in the manufacturing process of a semiconductor device. Hereinafter, the usage method of the sheet for semiconductor device manufacturing (the manufacturing method of the semiconductor wafer with a film-like adhesive agent) is demonstrated in detail, referring drawings.

FIG. 7 is a cross-sectional view schematically illustrating a method of manufacturing a semiconductor wafer, which is used as a sheet for manufacturing a semiconductor device. FIG. 8 is a cross-sectional view schematically illustrating a method of using the aforementioned semiconductor device manufacturing sheet. Here, a method of using the sheet 101 for manufacturing a semiconductor device will be described by taking the sheet 101 for manufacturing a semiconductor device shown in FIG. 2 as an example. Hereinafter, about the sheet for semiconductor device manufacture after peeling off the composite release film 20, it is also described as the sheet for semiconductor manufacture.

First, before using the sheet 101 for manufacturing a semiconductor device, as shown in FIG. 7A, a semiconductor wafer 9' is prepared, and the back grinding tape 8 is attached to the circuit formation surface 9a' of the semiconductor wafer 9'.

Next, laser light (not shown) is irradiated so as to be focused on a focal point set inside the semiconductor wafer 9', thereby forming a modified layer 90' inside the semiconductor wafer 9' as shown in FIG. 7B . The aforementioned laser light is preferably irradiated to the semiconductor wafer 9' from the inner surface 9b' side of the semiconductor wafer 9'.

The position of the focal point at this time is the predetermined dividing (dicing) position of the semiconductor wafer 9', and is set so that the semiconductor wafers of the desired size, shape and number are obtained from the semiconductor wafer 9'.

Next, the inner surface 9b' of the semiconductor wafer 9' is ground using a grinder (not shown). As a result, the thickness of the semiconductor wafer 9' is adjusted to a target value, and the semiconductor wafer 9 is divided at the portion where the modified layer 90' is formed by utilizing the force applied to the semiconductor wafer 9' at the time of grinding. ', as shown in FIG. 7C, a plurality of semiconductor wafers 9 are fabricated. In Fig. 7, reference numeral 9a denotes the circuit formation surface of the semiconductor wafer 9, and corresponds to the circuit formation surface 9a' of the semiconductor wafer 9'. In addition, reference numeral 9b denotes the inner surface of the semiconductor wafer 9, and corresponds to the inner surface 9b' of the semiconductor wafer 9' after grinding.

By the above operation, the semiconductor wafer 9 to be used as the sheet 101 for manufacturing a semiconductor device is obtained. More specifically, by this step, the semiconductor wafer group 901 in the state in which the plurality of semiconductor wafers 9 are fixed in order on the back grinding tape 8 is obtained.

Next, using the semiconductor wafer 9 (semiconductor wafer group 901) obtained above, a semiconductor wafer with a film-like adhesive is produced. First, as shown in FIG. 8A , the film adhesive 14 in the semiconductor device manufacturing sheet 101 is attached to the semiconductor wafer group 901 while heating the sheet 101 for semiconductor device manufacturing from which the composite release film 20 has been removed. The inner surface 9b of all the semiconductor wafers 9 among them. Furthermore, the attachment object of the film-like adhesive 14 at this time may also be an incompletely divided semiconductor wafer.

Then, the back grinding tape 8 is removed from the semiconductor wafer group in the fixed state. Then, as shown in FIG. 8B , the sheet 101 for manufacturing a semiconductor device is cooled in a direction parallel to the surface of the sheet 101 for manufacturing a semiconductor device (for example, the first surface 12 a of the first adhesive layer 12 ). Stretch, and thereby expand. Here, an arrow E ₁ for manufacturing a semiconductor device 101 of the extension direction of the sheet. By expanding in this way, the film-like adhesive 14 is cut along the outer periphery of the semiconductor wafer 9 .

Through this step, a semiconductor wafer group 910 with a film-like adhesive can be obtained. The semiconductor wafer group 910 with a film-like adhesive is a plurality of semiconductor wafers 914 with a film-like adhesive fixed on the intermediate layer 13 in an orderly arrangement. In this state, the plurality of semiconductor wafers 914 with the film-like adhesive includes the semiconductor wafer 9 and the cut film-like adhesive 140 provided on the inner surface 9 b of the semiconductor wafer 9 .

As described above, when the semiconductor wafer 9' is divided, when a part of the semiconductor wafer 9' is not divided into the semiconductor wafer 9, this step is performed to divide the region into the semiconductor wafer.

As for the sheet 101 for semiconductor device manufacture, it is preferable that the temperature of this sheet 101 for semiconductor device manufacture is -5 degreeC - 5 degreeC, and it spreads. By cooling and expanding the sheet 101 for semiconductor device manufacturing in this way (cold expanding), the film-like adhesive 14 can be cut more easily and with high accuracy. The expansion of the wafer 101 for manufacturing a semiconductor device can be performed by a known method.

In this step, since the sheet 101 for manufacturing a semiconductor device is provided with the intermediate layer 13, the film-like adhesive 14 is cut with high accuracy at the target position, and cutting failure can be suppressed.

After the film-like adhesive 14 is cut, as shown in FIG. 8C , the semiconductor wafer 914 with the film-like adhesive is pulled off from the intermediate layer 13 in the laminated sheet 10 and picked up. The semiconductor wafer 914 with the film-like adhesive can be picked up by a known method. For example, it can be picked up by the pull-up part 7 of the manufacturing apparatus of a semiconductor device. In this way, a semiconductor wafer 914 with a film-like adhesive can be produced. [Example]

Next, the present invention will be described in more detail by showing examples, but the present invention is not limited to the following examples.

[Manufacturing raw materials of adhesive composition] The raw materials for producing the adhesive composition are shown below. [Polymer component (a)] (a)-1: An acrylic resin (weight average molecular weight 800000, glass transition temperature 9°C) obtained by copolymerizing methyl acrylate (95 parts by mass) and 2-hydroxyethyl acrylate (5 parts by mass). [Epoxy resin (b1)] (b1)-1: Cresol novolak type epoxy resin with acryl group added (“CNA147” manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent weight 518 g/eq, number average molecular weight 2100, unsaturated group content equal to epoxy equivalent). [Thermosetting agent (b2)] (b2)-1: Aralkyl-type phenol resin ("Milex XLC-4L" manufactured by Mitsui Chemicals Co., Ltd., number average molecular weight 1100, softening point 63°C). [filler (d)] (d)-1: Spherical silica (“YA050C-MJE” manufactured by Admatechs, average particle size 50 nm, methacrylic silane treated product). [Coupling agent (e)] (e)-1: Silane coupling agent, 3-glycidyloxypropylmethyldiethoxysilane (“KBE-402” manufactured by Shin-Etsu Polysiloxane Co., Ltd.). [Crosslinking agent (f)] (f)-1: Toluene diisocyanate-based crosslinking agent (“Coronate L” manufactured by Tosoh Corporation)

[Example 1] [Manufacture of Sheets for Semiconductor Device Manufacturing] [Fabrication of base material] Using an extruder, low-density polyethylene (LDPE, "Sumikathene L705" manufactured by Sumitomo Chemical Co., Ltd.) was melted, the melt was extruded by the T-die method, and the extrudate was biaxially stretched using a cooling roll. A base material made of LDPE (thickness 110 μm) was obtained.

[Production of Support Sheet] Manufacture of a non-energy ray-curable adhesive composition containing an acrylic resin as an adhesive resin (“Oribain BPS 6367X” manufactured by Toyo-Chem) (100 parts by mass), and a crosslinking agent (“BXX 5640” manufactured by Toyo-Chem Co., Ltd.) (1 part by mass). Next, a release film (SP-PET381031, 38 μm, manufactured by Lintec), whose one side was subjected to polysiloxane treatment and peeled off, made of polyethylene terephthalate, was top-coated with the aforementioned peeling treatment. The adhesive composition obtained above was applied, and heated and dried at 100° C. for 2 minutes, thereby producing a non-energy ray-curable first adhesive layer (thickness 10 μm). Then, the base material obtained above is bonded to the exposed surface of the first adhesive layer, thereby obtaining a support sheet.

[The production of the middle layer] Using an extruder, ethylene vinyl acetate copolymer (EVA, "Ultrathene 636" manufactured by Tosoh Corporation) was melted, the melt was extruded by the T-die method, and the extrudate was biaxially spun using a cooling roll. It was stretched to obtain an intermediate layer (80 μm in thickness) made of EVA.

[Production of film adhesive] To manufacture a thermosetting adhesive composition containing polymer component (a)-1 (100 parts by mass), epoxy resin (b1)-1 (10 parts by mass), thermosetting Agent (b2)-1 (1.5 parts by mass), filler (d)-1 (75 parts by mass), coupling agent (e)-1 (0.5 parts by mass) and crosslinking agent (f)-1 (0.5 parts by mass) ). Next, a release film (SP-PET751031, 75 μm, manufactured by Lintec), whose one side has been subjected to polysiloxane treatment and peeled off from a polyethylene terephthalate film, was top-coated with the aforementioned peeling treatment. The adhesive composition obtained above was applied, and heated and dried at 80° C. for 2 minutes to obtain a film-like adhesive. Then, the intermediate layer obtained above is attached to the exposed surface of the film-like adhesive. Thereby, the laminated body which laminated|stacked a peeling film, a film-like adhesive agent, and an intermediate layer in this order was obtained.

[Fabrication of Supporting Substrate and Second Adhesive Layer] The adhesive composition obtained above was applied on the surface of the supporting substrate (film made of polyethylene terephthalate, manufactured by Mitsubishi Chemical, Diafoil T100, thickness 25 μm) so that the thickness after drying was 20 μm, and the thickness was 100 μm. The laminated body of the support substrate and the second adhesive layer was obtained by heating and drying at °C for 2 minutes. Then, on the exposed surface of the release film of the laminate in which the release film, the film-like adhesive and the intermediate layer were sequentially laminated, the second adhesive layer of the laminate of the support base and the second adhesive layer obtained above was attached. 's exposed face. Thereby, the laminated body which laminated|stacked a support base material, a 2nd adhesive bond layer, a release film, a film-like adhesive agent, and an intermediate layer in this order was obtained. The laminated body in which the support base material, the 2nd adhesive bond layer, and the release film are laminated|stacked in this order is called a composite release film.

Then, from the surface on which the film-like adhesive and the intermediate layer were laminated, the film-like adhesive and The intermediate layer, by removing the peripheral edge of the cut portion, is formed on the composite release film to form a thermosetting film adhesive (thickness 20 μm) and intermediate layer (thickness 80 μm) with a circular shape (diameter 305 mm) on the composite release film ).

[Manufacture of Sheets for Semiconductor Device Manufacturing] Then, the peeling film was removed from the laminate of the peeling film and the support sheet obtained above (equivalent to the first intermediate laminate with the peeling film described above), and the exposed surface of the newly generated first adhesive layer was compounded. The exposed surface of the intermediate layer in the laminate of the release film, the film-like adhesive, and the intermediate layer (corresponding to the second intermediate laminate described above) is bonded together. Then, the support piece was cut|disconnected from the base material side into the circle of diameter 370mm by the press process using a cutting blade, and the peripheral part of the cut|disconnected place was removed. At this time, the punching position of the support sheet is made to be outside the outer peripheral position of the circular film-like adhesive and the intermediate layer, and is concentric with the circular film-like adhesive and the intermediate layer. Through the above operation, a sheet for manufacturing a semiconductor device with a composite release film was obtained. The sheet for manufacturing a semiconductor device with a composite release film is composed of a base material (thickness 110 μm), a first adhesive layer (thickness 10 μm), and an intermediate layer. (80 micrometers in thickness), a film-like adhesive (20 micrometers in thickness), and a composite release film (83 micrometers in total thickness) were laminated|stacked in this order in the thickness direction of these layers, and were comprised.

[Manufacture of roller body] The laminate of the substrate, the first adhesive layer, the intermediate layer, and the film-like adhesive of the sheet for semiconductor device manufacturing was placed on an elongated composite release film (length 100 m) continuously at predetermined intervals (circular). The distance between the centers of the film adhesives is 378 mm) arranged in a row, and a roll body wound into a roll is produced so that the side of the sheet for semiconductor device manufacturing with the substrate layered faces the center side of the roll body. The direction of the roll winding is the longitudinal direction of the elongated composite release film.

[Example 2] In Example 1, the thickness of the supporting substrate was changed to 12 μm (manufactured by Toray, Lumirror S10), the thickness of the second adhesive layer was changed to 2 μm, and the thickness of the release film was changed to 25 μm (Lintec ( For SP-PET251031) manufactured by Lintec), except that the depth of incision of the composite release film was changed to the value shown in Table 1, the sheet and roll for semiconductor device manufacturing were manufactured by the same method as in Example 1. body.

[Example 3] Except having changed the incision depth of the composite release film like the value shown in Table 1, the sheet for semiconductor device manufacture and the roll body were manufactured by the method similar to the case of Example 1.

[Comparative Example 1] A sheet for semiconductor device production and a roll body were produced by the same method as in Example 1, except that the release film was not laminated with the support substrate and the second adhesive layer (a composite release film was not produced).

[Comparative Example 2] Except having changed the cut depth of the peeling film like the value shown in Table 1, the sheet for semiconductor device manufacture and the roll body were manufactured by the method similar to the case of the comparative example 1.

[Evaluation] [Evaluation of the occurrence of imprinting of the roll body of the sheet for semiconductor device manufacturing] Counting from the core of each roll body manufactured in the aforementioned Examples and Comparative Examples, it was visually confirmed whether or not a circular engraving occurred on the surface of the film-like adhesive for the second to fifth sheets for semiconductor device manufacturing. (traces derived from the shape of the circular film adhesive and the level difference of the intermediate layer).

A: The roll print is not confirmed. B: Marking is confirmed.

[Evaluation of Repeated Pressing Workability of Film Adhesives] The film-like adhesive and the intermediate layer were punched by the same method as the method for producing the laminated body of the film-like adhesive and the intermediate layer having a circular plane shape in the aforementioned Examples and Comparative Examples, and the following evaluation criteria were used. Repeated press workability was evaluated.

From the surface on which the film adhesive and the intermediate layer are laminated, a cutting blade is set so that the depth of the incision to the first composite release film or release film becomes the value shown in Table 1, and the film adhesive and the intermediate layer are repeated 10,000 times. Stamping of layers. In addition, the value of the depth of the incision is set to the composite release film or release film of the first (1st sheet) portion where the film adhesive and the intermediate layer have been punched, by cross-sectional observation with an electron microscope, The depth in the thickness direction of the composite release film or the release film of the notch portion formed at 10 points was randomly measured, and the average value of the 10 points was taken.

A: For 10 sheets counted from the last processing, the press processing of the film adhesive is appropriately performed. B: For 10 sheets from the last processing, the press processing of 5 or more sheets of the film-like adhesive was not performed properly (at the target of the cut by the cutting blade, it was confirmed that the cutting could not be performed).

[Evaluation of Repeatability of Mounting Process] With respect to the sheets for manufacturing semiconductor devices obtained in the aforementioned Examples and Comparative Examples, a tape mounter (RAD-2700 manufactured by Lintec) was used to continuously perform 30 sheets of film-forming sheets for manufacturing semiconductor devices. The step of attaching the agent to the inner surface of the 12-inch semiconductor wafer and the ring frame (manufactured by DISCO). This step is performed while peeling the composite release film or the release film of the sheet for semiconductor device production from the sheet. The state of the composite release film or the release film at the time of peeling off the composite release film or the release film from the film adhesive is confirmed in those who have appropriately performed the press processing of the film adhesive.

A: During the period in which 30 sheets were continuously attached, the composite release film or a part or all of the release film was not found to be cut or torn. B: During the period in which 30 sheets were continuously attached, it was confirmed that a part or all of the composite release film or the release film was cut or torn.

The results of the aforementioned evaluation are shown in Table 1.

[Table 1] Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 constitute Support substrate Thickness (μm) 25 12 25 - - Second Adhesive Layer Thickness (μm) 20 2 20 - - Release film thickness (μm) 38 25 38 38 38 Overall thickness (μm) 83 39 83 38 38 Notch depth (μm) 30 26 60 30 10 Forming a cutout portion for the support substrate none none have - - Thickness of cut-off part (μm) 53 13 twenty three 8 28 Evaluation roll printing A A A B B Repeated stamping workability A A A A B Repeatability evaluation of placement process (composite release film or release film breakage) A A B B -

As shown from the foregoing results, the production of the roll printing of the sheet system for semiconductor device manufacturing of Examples 1 to 3 having a composite release film containing a second adhesive layer and a support substrate and the total thickness of the composite release film exceeding 38 μm significantly suppressed.

In addition, in Examples 1 to 3 and Comparative Example 1 in which the depth of the incision of the composite release film or the release film exceeded 25 μm, the repeated press workability was excellent.

In addition, the thicker the thickness of the remainder, which is the value of "the total thickness of the release film, the second adhesive layer and the support substrate - the depth of the incision", the less likely the release film to break during the mounting process.

Even in the case where the thickness of the cut portion is relatively thin, the value of the total thickness of the release film and the second adhesive layer is greater than the value of the aforementioned cut depth, and in Example 2 where no cut portion is formed in the support substrate, It is also not easy to break the peeling film during the mounting process.

The sheet system for manufacturing a semiconductor device of the Example is very useful because the occurrence of engraving is suppressed when the sheet system for manufacturing a semiconductor device is formed into a roll body, and the yield in the stamping process of the film adhesive is improved.

The respective configurations and combinations of these in the respective embodiments are examples, and additions, omissions, substitutions, and other modifications of the configurations can be made without departing from the gist of the present invention. In addition, the present invention is not limited to each embodiment, but is limited only by the scope of the claims (claims to be claimed).

1: support sheet 7: pull-up portion 8: back grinding tape 9: semiconductor wafer 9a: circuit formation surface 9b of semiconductor wafer: inner surface 9' of semiconductor wafer: semiconductor wafer 9a': circuit formation surface 9b of semiconductor wafer ': inner surface of semiconductor wafer 10: laminated sheet 11: substrate 11a: first surface of substrate 12: first adhesive layer 12a: first surface of first adhesive layer 13: intermediate layer 13a: intermediate layer 14: film adhesive 14a: film adhesive first side 15: release film 16: second adhesive layer 17: support substrate 20: composite release film 90': modified layer 100, 101, 102: semiconductor Sheet for device manufacturing 110: Roll body 140: Film-like adhesive after cutting 901: Semiconductor wafer group 910: Semiconductor wafer group with film-like adhesive 914: Semiconductor wafer with film-like adhesive C: Cut portion D1: Cut Depth D2: Thickness E _{1 of the} cut-off portion: Expanding direction P: Unit W ₁₃ : Width of the intermediate layer W ₁₄ : Width of the film adhesive

1 is a cross-sectional view schematically showing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. 2 is a cross-sectional view schematically showing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. Fig. 3 is a plan view of the wafer for manufacturing a semiconductor device shown in Fig. 2 . 4 is a cross-sectional view schematically showing a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. 5] It is an enlarged view of the notch part of the sheet for semiconductor device manufacturing shown in FIG. 4. [FIG. 6] It is sectional drawing which shows typically the roll body of the sheet for semiconductor device manufacture which concerns on one Embodiment of this invention. 7A is a cross-sectional view schematically illustrating a method for manufacturing a semiconductor wafer to which the sheet for manufacturing a semiconductor device according to one embodiment of the present invention is used. 7B is a cross-sectional view schematically illustrating a method of manufacturing a semiconductor wafer to which the sheet for manufacturing a semiconductor device according to one embodiment of the present invention is used. 7C is a cross-sectional view schematically illustrating a method of manufacturing a semiconductor wafer to which the sheet for manufacturing a semiconductor device according to one embodiment of the present invention is used. 8A is a cross-sectional view schematically illustrating a method of using the sheet for manufacturing a semiconductor device according to an embodiment of the present invention. 8B is a cross-sectional view schematically illustrating a method of using the sheet for manufacturing a semiconductor device according to one embodiment of the present invention. 8C is a cross-sectional view schematically illustrating a method of using the sheet for manufacturing a semiconductor device according to one embodiment of the present invention.

1: Support sheet

11: Substrate

11a: The first side of the substrate

12: The first adhesive layer

12a: The first side of the first adhesive layer

14: Film adhesive

14a: The first side of the film adhesive

15: Peel off film

16: Second Adhesive Layer

17: Support substrate

20: Composite release film

100: Sheets for the manufacture of semiconductor devices

W ₁₄ : Width of film adhesive

Claims (13)

A sheet for manufacturing a semiconductor device, comprising a substrate, a first adhesive layer, a film adhesive, a release film, a second adhesive layer, and a support substrate, and the first adhesive layer is sequentially laminated on the substrate The agent layer, the film-like adhesive, the release film, the second adhesive layer, and the support substrate are formed; The thickness of the composite release film having a structure in which the release film, the second adhesive layer, and the support substrate are sequentially laminated is more than 38 μm. The sheet for manufacturing a semiconductor device according to claim 1, wherein in the composite release film, a cutout portion is formed from the surface of the side on which the film-like adhesive is laminated; The notch depth of the said notch part exceeds 25 micrometers. The sheet for manufacturing a semiconductor device according to claim 2, wherein the value of the thickness of the cut-off portion represented by the thickness of the composite release film - the depth of the incision is 10 μm or more. The sheet for manufacturing a semiconductor device according to claim 2 or 3, wherein the value of the total thickness of the release film and the second adhesive layer is greater than the value of the depth of the incision. The sheet for semiconductor device manufacture as described in any one of Claims 2-4 in which the said notch part is not formed in the said support base material. The sheet for manufacturing a semiconductor device according to any one of claims 1 to 5, wherein the thickness of the second adhesive layer is 2 μm or more. The sheet for semiconductor manufacturing according to any one of claims 1 to 6, wherein an intermediate layer is laminated between the first adhesive layer and the film-like adhesive. The sheet for semiconductor device manufacturing according to claim 7, wherein the area of the intermediate layer and the area of the film-like adhesive are both smaller than the area of at least one surface of the layer on the substrate side than these layers. The sheet for semiconductor device manufacturing according to claim 7 or 8, wherein the total thickness of the intermediate layer and the film-like adhesive is 15 μm or more. The sheet for semiconductor device manufacture as described in any one of Claims 1-9 whose thickness of the said support base material is 12 micrometers or more. The sheet for semiconductor device manufacture as described in any one of Claims 1-10 whose thickness of the said composite release film is 130 micrometers or less. The sheet for manufacturing a semiconductor device according to any one of claims 1 to 11, wherein the base material, the first adhesive layer and the film-like adhesive are laminated on the elongated composite release film, and the The said base material, the said 1st adhesive bond layer, and the said film-like adhesive agent serve as the roll body which wound the inside into a roll. A method for manufacturing a sheet for manufacturing a semiconductor device, comprising: Laminating the aforementioned base material and the aforementioned first adhesive layer to obtain a first intermediate laminate; The film adhesive, the release film, the second adhesive layer, and the support substrate are laminated in this order to obtain a second intermediate laminate; and The said 1st intermediate layered body and the said 2nd intermediate layered body are bonded together.

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