KR20230108292A - 압력 제어를 통한 펄스 가스 전달 방법 및 장치 - Google Patents

압력 제어를 통한 펄스 가스 전달 방법 및 장치 Download PDF

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Publication number
KR20230108292A
KR20230108292A KR1020237019730A KR20237019730A KR20230108292A KR 20230108292 A KR20230108292 A KR 20230108292A KR 1020237019730 A KR1020237019730 A KR 1020237019730A KR 20237019730 A KR20237019730 A KR 20237019730A KR 20230108292 A KR20230108292 A KR 20230108292A
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KR
South Korea
Prior art keywords
control
flow
pressure
gas
pulse
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Pending
Application number
KR1020237019730A
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English (en)
Korean (ko)
Inventor
준후아 딩
마이클 엘'바씨
Original Assignee
엠케이에스 인스트루먼츠 인코포레이티드
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Publication of KR20230108292A publication Critical patent/KR20230108292A/ko
Pending legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/02Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery
    • B05B12/06Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery for effecting pulsating flow
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557Pulsed pressure or control pressure
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561Gas plumbing upstream of the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00Control of fluid pressure
    • G05D16/20Control of fluid pressure characterised by the use of electric means
    • G05D16/2006Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means
    • G05D16/2013Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means
    • G05D16/2022Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means actuated by a proportional solenoid
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00Control of flow
    • G05D7/06Control of flow characterised by the use of electric means
    • G05D7/0617Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0635Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
    • H01L21/67017
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Flow Control (AREA)
  • Chemical Vapour Deposition (AREA)
  • Measuring Volume Flow (AREA)
  • Control Of Fluid Pressure (AREA)
KR1020237019730A 2020-11-20 2021-11-16 압력 제어를 통한 펄스 가스 전달 방법 및 장치 Pending KR20230108292A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063116599P 2020-11-20 2020-11-20
US63/116,599 2020-11-20
PCT/US2021/072433 WO2022109547A1 (en) 2020-11-20 2021-11-16 Method and apparatus for pulse gas delivery with pressure control

Publications (1)

Publication Number Publication Date
KR20230108292A true KR20230108292A (ko) 2023-07-18

Family

ID=81658879

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237019730A Pending KR20230108292A (ko) 2020-11-20 2021-11-16 압력 제어를 통한 펄스 가스 전달 방법 및 장치

Country Status (5)

Country Link
US (1) US12521745B2 (https=)
JP (1) JP7853975B2 (https=)
KR (1) KR20230108292A (https=)
TW (1) TW202235669A (https=)
WO (1) WO2022109547A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117716476A (zh) * 2021-08-05 2024-03-15 东京毅力科创株式会社 基板处理方法和基板处理装置

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JPH02253315A (ja) * 1989-03-27 1990-10-12 Kubota Ltd 配水制御装置
JP4137666B2 (ja) 2003-02-17 2008-08-20 株式会社堀場エステック マスフローコントローラ
US7335396B2 (en) * 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
JP4086057B2 (ja) * 2004-06-21 2008-05-14 日立金属株式会社 質量流量制御装置及びこの検定方法
KR100653710B1 (ko) * 2004-12-14 2006-12-04 삼성전자주식회사 질량 유량 제어기
US7673645B2 (en) * 2005-04-21 2010-03-09 Mks Instruments, Inc. Gas delivery method and system including a flow ratio controller using a multiple antisymmetric optimal control arrangement
JP4788920B2 (ja) 2006-03-20 2011-10-05 日立金属株式会社 質量流量制御装置、その検定方法及び半導体製造装置
US7891228B2 (en) * 2008-11-18 2011-02-22 Mks Instruments, Inc. Dual-mode mass flow verification and mass flow delivery system and method
TWI435196B (zh) * 2009-10-15 2014-04-21 派伏塔系統公司 氣體流量控制方法及裝置
US8499786B2 (en) * 2010-04-09 2013-08-06 Hitachi Metals, Ltd Mass flow controller with enhanced operating range
KR101599343B1 (ko) * 2011-05-10 2016-03-03 가부시키가이샤 후지킨 유량 모니터 부착 압력식 유량 제어 장치
US9690301B2 (en) * 2012-09-10 2017-06-27 Reno Technologies, Inc. Pressure based mass flow controller
JP5809012B2 (ja) 2011-10-14 2015-11-10 株式会社堀場エステック 流量制御装置、流量測定機構、又は、当該流量測定機構を備えた流量制御装置に用いられる診断装置及び診断用プログラム
US9846074B2 (en) 2012-01-20 2017-12-19 Mks Instruments, Inc. System for and method of monitoring flow through mass flow controllers in real time
US9557744B2 (en) 2012-01-20 2017-01-31 Mks Instruments, Inc. System for and method of monitoring flow through mass flow controllers in real time
JP5960614B2 (ja) * 2012-03-29 2016-08-02 Ckd株式会社 流体制御システム、流体制御方法
US20130312663A1 (en) 2012-05-22 2013-11-28 Applied Microstructures, Inc. Vapor Delivery Apparatus
CN202690588U (zh) 2012-07-25 2013-01-23 浙江华昌液压机械有限公司 油缸内泄漏线性测量装置
WO2015123008A1 (en) 2014-02-13 2015-08-20 Mks Instruments, Inc. System for and method of providing pressure insensitive self verifying mass flow controller
JP6512959B2 (ja) * 2015-06-19 2019-05-15 東京エレクトロン株式会社 ガス供給系、ガス供給制御方法、及びガス置換方法
WO2017011325A1 (en) * 2015-07-10 2017-01-19 Pivotal Systems Corporation Method and apparatus for gas flow control
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US10725484B2 (en) 2018-09-07 2020-07-28 Mks Instruments, Inc. Method and apparatus for pulse gas delivery using an external pressure trigger

Also Published As

Publication number Publication date
US12521745B2 (en) 2026-01-13
JP7853975B2 (ja) 2026-04-30
WO2022109547A1 (en) 2022-05-27
TW202235669A (zh) 2022-09-16
US20220161288A1 (en) 2022-05-26
JP2023550129A (ja) 2023-11-30

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