KR20230108292A - 압력 제어를 통한 펄스 가스 전달 방법 및 장치 - Google Patents
압력 제어를 통한 펄스 가스 전달 방법 및 장치 Download PDFInfo
- Publication number
- KR20230108292A KR20230108292A KR1020237019730A KR20237019730A KR20230108292A KR 20230108292 A KR20230108292 A KR 20230108292A KR 1020237019730 A KR1020237019730 A KR 1020237019730A KR 20237019730 A KR20237019730 A KR 20237019730A KR 20230108292 A KR20230108292 A KR 20230108292A
- Authority
- KR
- South Korea
- Prior art keywords
- control
- flow
- pressure
- gas
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
- B05B12/02—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery
- B05B12/06—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery for effecting pulsating flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D16/00—Control of fluid pressure
- G05D16/20—Control of fluid pressure characterised by the use of electric means
- G05D16/2006—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means
- G05D16/2013—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means
- G05D16/2022—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means actuated by a proportional solenoid
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
- G05D7/06—Control of flow characterised by the use of electric means
- G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
- G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
- G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
-
- H01L21/67017—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Flow Control (AREA)
- Chemical Vapour Deposition (AREA)
- Measuring Volume Flow (AREA)
- Control Of Fluid Pressure (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063116599P | 2020-11-20 | 2020-11-20 | |
| US63/116,599 | 2020-11-20 | ||
| PCT/US2021/072433 WO2022109547A1 (en) | 2020-11-20 | 2021-11-16 | Method and apparatus for pulse gas delivery with pressure control |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20230108292A true KR20230108292A (ko) | 2023-07-18 |
Family
ID=81658879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237019730A Pending KR20230108292A (ko) | 2020-11-20 | 2021-11-16 | 압력 제어를 통한 펄스 가스 전달 방법 및 장치 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12521745B2 (https=) |
| JP (1) | JP7853975B2 (https=) |
| KR (1) | KR20230108292A (https=) |
| TW (1) | TW202235669A (https=) |
| WO (1) | WO2022109547A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117716476A (zh) * | 2021-08-05 | 2024-03-15 | 东京毅力科创株式会社 | 基板处理方法和基板处理装置 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02253315A (ja) * | 1989-03-27 | 1990-10-12 | Kubota Ltd | 配水制御装置 |
| JP4137666B2 (ja) | 2003-02-17 | 2008-08-20 | 株式会社堀場エステック | マスフローコントローラ |
| US7335396B2 (en) * | 2003-04-24 | 2008-02-26 | Micron Technology, Inc. | Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers |
| JP4086057B2 (ja) * | 2004-06-21 | 2008-05-14 | 日立金属株式会社 | 質量流量制御装置及びこの検定方法 |
| KR100653710B1 (ko) * | 2004-12-14 | 2006-12-04 | 삼성전자주식회사 | 질량 유량 제어기 |
| US7673645B2 (en) * | 2005-04-21 | 2010-03-09 | Mks Instruments, Inc. | Gas delivery method and system including a flow ratio controller using a multiple antisymmetric optimal control arrangement |
| JP4788920B2 (ja) | 2006-03-20 | 2011-10-05 | 日立金属株式会社 | 質量流量制御装置、その検定方法及び半導体製造装置 |
| US7891228B2 (en) * | 2008-11-18 | 2011-02-22 | Mks Instruments, Inc. | Dual-mode mass flow verification and mass flow delivery system and method |
| TWI435196B (zh) * | 2009-10-15 | 2014-04-21 | 派伏塔系統公司 | 氣體流量控制方法及裝置 |
| US8499786B2 (en) * | 2010-04-09 | 2013-08-06 | Hitachi Metals, Ltd | Mass flow controller with enhanced operating range |
| KR101599343B1 (ko) * | 2011-05-10 | 2016-03-03 | 가부시키가이샤 후지킨 | 유량 모니터 부착 압력식 유량 제어 장치 |
| US9690301B2 (en) * | 2012-09-10 | 2017-06-27 | Reno Technologies, Inc. | Pressure based mass flow controller |
| JP5809012B2 (ja) | 2011-10-14 | 2015-11-10 | 株式会社堀場エステック | 流量制御装置、流量測定機構、又は、当該流量測定機構を備えた流量制御装置に用いられる診断装置及び診断用プログラム |
| US9846074B2 (en) | 2012-01-20 | 2017-12-19 | Mks Instruments, Inc. | System for and method of monitoring flow through mass flow controllers in real time |
| US9557744B2 (en) | 2012-01-20 | 2017-01-31 | Mks Instruments, Inc. | System for and method of monitoring flow through mass flow controllers in real time |
| JP5960614B2 (ja) * | 2012-03-29 | 2016-08-02 | Ckd株式会社 | 流体制御システム、流体制御方法 |
| US20130312663A1 (en) | 2012-05-22 | 2013-11-28 | Applied Microstructures, Inc. | Vapor Delivery Apparatus |
| CN202690588U (zh) | 2012-07-25 | 2013-01-23 | 浙江华昌液压机械有限公司 | 油缸内泄漏线性测量装置 |
| WO2015123008A1 (en) | 2014-02-13 | 2015-08-20 | Mks Instruments, Inc. | System for and method of providing pressure insensitive self verifying mass flow controller |
| JP6512959B2 (ja) * | 2015-06-19 | 2019-05-15 | 東京エレクトロン株式会社 | ガス供給系、ガス供給制御方法、及びガス置換方法 |
| WO2017011325A1 (en) * | 2015-07-10 | 2017-01-19 | Pivotal Systems Corporation | Method and apparatus for gas flow control |
| JP7245600B2 (ja) * | 2016-12-15 | 2023-03-24 | 株式会社堀場エステック | 流量制御装置、及び、流量制御装置用プログラム |
| US10649471B2 (en) | 2018-02-02 | 2020-05-12 | Mks Instruments, Inc. | Method and apparatus for pulse gas delivery with isolation valves |
| CN111971636B (zh) * | 2018-04-19 | 2023-12-12 | 株式会社堀场Stec | 流量控制装置、诊断方法和存储介质 |
| US10725484B2 (en) | 2018-09-07 | 2020-07-28 | Mks Instruments, Inc. | Method and apparatus for pulse gas delivery using an external pressure trigger |
-
2021
- 2021-11-16 WO PCT/US2021/072433 patent/WO2022109547A1/en not_active Ceased
- 2021-11-16 JP JP2023530684A patent/JP7853975B2/ja active Active
- 2021-11-16 KR KR1020237019730A patent/KR20230108292A/ko active Pending
- 2021-11-17 TW TW110142732A patent/TW202235669A/zh unknown
- 2021-11-18 US US17/455,626 patent/US12521745B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US12521745B2 (en) | 2026-01-13 |
| JP7853975B2 (ja) | 2026-04-30 |
| WO2022109547A1 (en) | 2022-05-27 |
| TW202235669A (zh) | 2022-09-16 |
| US20220161288A1 (en) | 2022-05-26 |
| JP2023550129A (ja) | 2023-11-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| R18 | Changes to party contact information recorded |
Free format text: ST27 STATUS EVENT CODE: A-3-3-R10-R18-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| D21 | Rejection of application intended |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| T11 | Administrative time limit extension requested |
Free format text: ST27 STATUS EVENT CODE: U-3-3-T10-T11-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |