JP7853975B2 - 質量流量コントローラ及びシステム - Google Patents

質量流量コントローラ及びシステム

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Publication number
JP7853975B2
JP7853975B2 JP2023530684A JP2023530684A JP7853975B2 JP 7853975 B2 JP7853975 B2 JP 7853975B2 JP 2023530684 A JP2023530684 A JP 2023530684A JP 2023530684 A JP2023530684 A JP 2023530684A JP 7853975 B2 JP7853975 B2 JP 7853975B2
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JP
Japan
Prior art keywords
flow
control
pressure
gas
gas supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023530684A
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English (en)
Japanese (ja)
Other versions
JP2023550129A5 (https=
JP2023550129A (ja
Inventor
ディング・ジュンファ
ラバッシ・マイケル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MKS Inc
Original Assignee
MKS Inc
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Publication date
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Publication of JP2023550129A publication Critical patent/JP2023550129A/ja
Publication of JP2023550129A5 publication Critical patent/JP2023550129A5/ja
Application granted granted Critical
Publication of JP7853975B2 publication Critical patent/JP7853975B2/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/20—Control of fluid pressure characterised by the use of electric means
    • G05D16/2006—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means
    • G05D16/2013—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means
    • G05D16/2022—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means actuated by a proportional solenoid
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/02—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery
    • B05B12/06—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery for effecting pulsating flow

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Flow Control (AREA)
  • Chemical Vapour Deposition (AREA)
  • Measuring Volume Flow (AREA)
  • Control Of Fluid Pressure (AREA)
JP2023530684A 2020-11-20 2021-11-16 質量流量コントローラ及びシステム Active JP7853975B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063116599P 2020-11-20 2020-11-20
US63/116,599 2020-11-20
PCT/US2021/072433 WO2022109547A1 (en) 2020-11-20 2021-11-16 Method and apparatus for pulse gas delivery with pressure control

Publications (3)

Publication Number Publication Date
JP2023550129A JP2023550129A (ja) 2023-11-30
JP2023550129A5 JP2023550129A5 (https=) 2024-11-13
JP7853975B2 true JP7853975B2 (ja) 2026-04-30

Family

ID=81658879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023530684A Active JP7853975B2 (ja) 2020-11-20 2021-11-16 質量流量コントローラ及びシステム

Country Status (5)

Country Link
US (1) US12521745B2 (https=)
JP (1) JP7853975B2 (https=)
KR (1) KR20230108292A (https=)
TW (1) TW202235669A (https=)
WO (1) WO2022109547A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117716476A (zh) * 2021-08-05 2024-03-15 东京毅力科创株式会社 基板处理方法和基板处理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040226507A1 (en) 2003-04-24 2004-11-18 Carpenter Craig M. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
WO2019152301A1 (en) 2018-02-02 2019-08-08 Mks Instruments, Inc. Method and apparatus for pulse gas delivery with isolation valves

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JPH02253315A (ja) * 1989-03-27 1990-10-12 Kubota Ltd 配水制御装置
JP4137666B2 (ja) 2003-02-17 2008-08-20 株式会社堀場エステック マスフローコントローラ
JP4086057B2 (ja) * 2004-06-21 2008-05-14 日立金属株式会社 質量流量制御装置及びこの検定方法
KR100653710B1 (ko) * 2004-12-14 2006-12-04 삼성전자주식회사 질량 유량 제어기
US7673645B2 (en) * 2005-04-21 2010-03-09 Mks Instruments, Inc. Gas delivery method and system including a flow ratio controller using a multiple antisymmetric optimal control arrangement
JP4788920B2 (ja) 2006-03-20 2011-10-05 日立金属株式会社 質量流量制御装置、その検定方法及び半導体製造装置
US7891228B2 (en) * 2008-11-18 2011-02-22 Mks Instruments, Inc. Dual-mode mass flow verification and mass flow delivery system and method
TWI435196B (zh) * 2009-10-15 2014-04-21 派伏塔系統公司 氣體流量控制方法及裝置
US8499786B2 (en) * 2010-04-09 2013-08-06 Hitachi Metals, Ltd Mass flow controller with enhanced operating range
KR101599343B1 (ko) * 2011-05-10 2016-03-03 가부시키가이샤 후지킨 유량 모니터 부착 압력식 유량 제어 장치
US9690301B2 (en) * 2012-09-10 2017-06-27 Reno Technologies, Inc. Pressure based mass flow controller
JP5809012B2 (ja) 2011-10-14 2015-11-10 株式会社堀場エステック 流量制御装置、流量測定機構、又は、当該流量測定機構を備えた流量制御装置に用いられる診断装置及び診断用プログラム
US9846074B2 (en) 2012-01-20 2017-12-19 Mks Instruments, Inc. System for and method of monitoring flow through mass flow controllers in real time
US9557744B2 (en) 2012-01-20 2017-01-31 Mks Instruments, Inc. System for and method of monitoring flow through mass flow controllers in real time
JP5960614B2 (ja) * 2012-03-29 2016-08-02 Ckd株式会社 流体制御システム、流体制御方法
US20130312663A1 (en) 2012-05-22 2013-11-28 Applied Microstructures, Inc. Vapor Delivery Apparatus
CN202690588U (zh) 2012-07-25 2013-01-23 浙江华昌液压机械有限公司 油缸内泄漏线性测量装置
WO2015123008A1 (en) 2014-02-13 2015-08-20 Mks Instruments, Inc. System for and method of providing pressure insensitive self verifying mass flow controller
JP6512959B2 (ja) * 2015-06-19 2019-05-15 東京エレクトロン株式会社 ガス供給系、ガス供給制御方法、及びガス置換方法
WO2017011325A1 (en) * 2015-07-10 2017-01-19 Pivotal Systems Corporation Method and apparatus for gas flow control
JP7245600B2 (ja) * 2016-12-15 2023-03-24 株式会社堀場エステック 流量制御装置、及び、流量制御装置用プログラム
CN111971636B (zh) * 2018-04-19 2023-12-12 株式会社堀场Stec 流量控制装置、诊断方法和存储介质
US10725484B2 (en) 2018-09-07 2020-07-28 Mks Instruments, Inc. Method and apparatus for pulse gas delivery using an external pressure trigger

Patent Citations (2)

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US20040226507A1 (en) 2003-04-24 2004-11-18 Carpenter Craig M. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
WO2019152301A1 (en) 2018-02-02 2019-08-08 Mks Instruments, Inc. Method and apparatus for pulse gas delivery with isolation valves

Also Published As

Publication number Publication date
US12521745B2 (en) 2026-01-13
KR20230108292A (ko) 2023-07-18
WO2022109547A1 (en) 2022-05-27
TW202235669A (zh) 2022-09-16
US20220161288A1 (en) 2022-05-26
JP2023550129A (ja) 2023-11-30

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