KR20230104498A - Apparatus and method for treating substrate - Google Patents

Abstract

The present invention provides an apparatus for processing a substrate. The substrate processing apparatus includes: a liquid processing chamber that processes a substrate by supplying a processing liquid to the substrate; a drying chamber for drying the substrate processed in the liquid processing chamber; and a post-processing chamber for post-processing the substrate processed in the drying chamber, wherein the post-processing chamber includes: a chuck; at least one pin installed on the chuck and supporting a substrate; a window installed above the chuck and combined with the chuck to form an inner space; and a heating assembly disposed in the inner space and heating the substrate supported by the pins.

Description

Substrate processing device and substrate processing method {APPARATUS AND METHOD FOR TREATING SUBSTRATE}

The present invention relates to a substrate processing apparatus and a substrate processing method.

In order to manufacture a semiconductor device, a desired pattern is formed on a substrate such as a wafer through various processes such as photolithography, etching, ashing, ion implantation, and thin film deposition. Various processing liquids and processing gases are used in each process. In addition, a drying process is performed on the substrate to remove the treatment liquid used to treat the substrate from the substrate.

In general, a drying process for removing a treatment liquid from a substrate is performed by rotating the substrate at a high speed and removing the treatment liquid remaining on the substrate by centrifugal force caused by the rotation of the substrate, or using a supercritical fluid to remove the treatment liquid from the substrate. and a supercritical drying step to remove the remaining treatment liquid.

In the supercritical drying process, a substrate is brought into a chamber capable of maintaining a high-pressure and high-temperature atmosphere, and then carbon dioxide in a supercritical state is supplied to the substrate to process liquid (eg, organic solvent, developer solvent, etc.) remaining on the substrate. ) is removed. Carbon dioxide in a supercritical state has high solubility and permeability. Accordingly, when carbon dioxide in a supercritical state is supplied on the substrate, the carbon dioxide easily penetrates into the pattern on the substrate. Thus, the pattern formed on the substrate and the treatment liquid remaining between the patterns are easily removed from the substrate.

However, as the line width of a pattern formed on a substrate has recently become very fine, even if a supercritical drying process is performed, a treatment liquid may remain between patterns or on the surface of the substrate. Residues remaining on the substrate, such as alcohol/organic substances, may generate particles on the substrate.

An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of efficiently processing a substrate.

Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of effectively removing residue remaining on a substrate after drying the substrate.

In addition, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of effectively removing residues of alcohol or organic components remaining on a substrate after drying the substrate using a supercritical fluid. do.

The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the description below.

The present invention provides an apparatus for processing a substrate. The substrate processing apparatus includes: a liquid processing chamber that processes a substrate by supplying a processing liquid to the substrate; a drying chamber for drying the substrate processed in the liquid processing chamber; and a post-processing chamber for post-processing the substrate processed in the drying chamber, wherein the post-processing chamber includes: a chuck; at least one pin installed on the chuck and supporting a substrate; a window installed above the chuck and combined with the chuck to form an inner space; and a heating assembly disposed in the inner space and heating the substrate supported by the pins.

According to one embodiment, the heating assembly may include: a plurality of heating light sources disposed in the inner space and emitting light for heating a substrate; a light source substrate on which the heating light sources are installed; and a heat sink disposed under the light source substrate.

According to an embodiment, the outermost heating light source among the heating light sources may be configured to emit light inclined upward in a direction toward the outside of the chuck.

According to one embodiment, the heating assembly may further include an insulating plate installed between a heating light source disposed at an outermost part of the heating light sources and the pin when viewed from above.

According to an embodiment, when viewed from above, an opening is formed in a central region of the chuck, and the post-processing chamber further includes: a shaft inserted into the opening and installed under the heat sink and the light source substrate. can

According to one embodiment, the shaft may include: an outer shaft connected to the chuck; and an inner shaft disposed within the outer shaft and connected to the heat sink.

According to an embodiment, the post-processing chamber further includes a driver for rotating the outer shaft, the chuck and the window are configured to rotate together, and the heat sink and the light source substrate are independent of rotation of the chuck. can be configured.

According to one embodiment, the heating light source may be an LED heater.

According to an embodiment, the heating light sources may be arranged spaced apart from each other along a circumferential direction of the light source substrate and along a radial direction of the light source substrate when viewed from above.

The invention also provides a method of processing a substrate. The substrate processing method includes: a liquid processing step of processing the substrate by supplying a processing liquid to the substrate; a drying step of drying the substrate on which the liquid processing step has been performed; and a post-processing step of heating and post-processing the substrate on which the drying step has been performed, wherein in the post-processing step, the substrate is supported by a chuck pin installed on a chuck, and the chuck and a window disposed above the chuck A heating light source disposed in an internal space formed by combining with each other emits light to heat the substrate, thereby removing residues remaining on the substrate from the substrate.

According to an embodiment, a plurality of heating light sources are provided, and in the post-processing step, selected heating light sources among the heating light sources emit light for heating the substrate to remove the residue from the substrate. .

According to an embodiment, in the post-processing step, the chuck and the heating light source may not be rotated.

According to one embodiment, the heating light source may be an LED heater.

According to one embodiment of the present invention, the substrate can be efficiently processed.

In addition, according to an embodiment of the present invention, residue remaining on the substrate after drying the substrate can be effectively removed.

In addition, according to an embodiment of the present invention, residues of alcohol or organic components remaining on the substrate after drying the substrate using the supercritical fluid can be effectively removed.

The effects of the present invention are not limited to the above-mentioned effects, and effects not mentioned will be clearly understood by those skilled in the art from this specification and the accompanying drawings.

1 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view schematically showing an embodiment of the liquid processing chamber of FIG. 1 .
3 is a cross-sectional view schematically showing an embodiment of the drying chamber of FIG. 1 .
4 is a cross-sectional view schematically showing an embodiment of a heating unit provided in the post-treatment chamber of FIG. 1 .
FIG. 5 is a plan view schematically showing the heating assembly of FIG. 4 .
6 is a flow chart illustrating a substrate processing method according to an embodiment of the present invention.
FIG. 7 is a view showing a substrate processing apparatus performing the liquid processing step of FIG. 6 .
FIG. 8 is a view showing a substrate processing apparatus performing the drying step of FIG. 6 .
FIG. 9 is a view showing a substrate processing apparatus performing the post-processing step of FIG. 6 .
FIG. 10 is a diagram illustrating temperature measurement points at which the temperature of a substrate is measured while performing the post-processing step of FIG. 6 .
FIG. 11 is a graph showing temperature changes over time of temperature measurement points of FIG. 10 .

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein. In addition, in describing preferred embodiments of the present invention in detail, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. In addition, the same reference numerals are used throughout the drawings for parts having similar functions and actions.

'Including' a certain component means that other components may be further included, rather than excluding other components unless otherwise stated. Specifically, terms such as "comprise" or "having" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features or It should be understood that the presence or addition of numbers, steps, operations, components, parts, or combinations thereof is not precluded.

Singular expressions include plural expressions unless the context clearly dictates otherwise. In addition, shapes and sizes of elements in the drawings may be exaggerated for clearer description.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms may be used for the purpose of distinguishing one component from another. For example, a first element may be termed a second element, and similarly, the second element may also be termed a first element, without departing from the scope of the present invention.

It is understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, but other elements may exist in the middle. It should be. On the other hand, when a component is referred to as “directly connected” or “directly connected” to another component, it should be understood that no other component exists in the middle. Other expressions describing the relationship between components, such as "between" and "directly between" or "adjacent to" and "directly adjacent to", etc., should be interpreted similarly.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and unless explicitly defined in this application, they are not interpreted in an ideal or excessively formal meaning. .

Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 11 .

1 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1 , the substrate processing apparatus includes an index module 10 , a processing module 20 , and a controller 30 . When viewed from above, the index module 10 and the processing module 20 are disposed along one direction. Hereinafter, the direction in which the index module 10 and the processing module 20 are disposed is referred to as a first direction (X), and a direction perpendicular to the first direction (X) when viewed from above is referred to as a second direction (Y). And, a direction perpendicular to both the first direction (X) and the second direction (Y) is referred to as a third direction (Z).

The index module 10 transports the substrate W from the container C containing the substrate W to the processing module 20, and transfers the substrate W processed in the processing module 20 to the container C. stored as The length direction of the index module 10 is provided as the second direction (Y). The index module 10 has a load port 12 and an index frame 14. Based on the index frame 14, the load port 12 is located on the opposite side of the processing module 20. The container (C) in which the substrates (W) are accommodated is placed in the load port (12). A plurality of load ports 12 may be provided, and the plurality of load ports 12 may be disposed along the second direction Y.

As the container C, an airtight container such as a Front Open Unified Pod (FOUP) may be used. The container C may be placed on the load port 12 by a transport means (not shown) such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle or an operator. can

An index robot 120 is provided on the index frame 14 . A guide rail 124 provided in the second direction Y is provided in the index frame 14 , and the index robot 120 may be provided to be movable on the guide rail 124 . The index robot 120 includes a hand 122 on which a substrate W is placed, and the hand 122 moves forward and backward, rotates about an axis in the third direction Z, and moves in the third direction Z. It may be provided to be movable along. A plurality of hands 122 are provided spaced apart in the vertical direction, and the hands 122 may move forward and backward independently of each other.

The controller 30 may control the substrate processing apparatus. The controller 30 includes a process controller composed of a microprocessor (computer) that controls the substrate processing apparatus, a keyboard through which an operator inputs commands to manage the substrate processing apparatus, and the like, and visualizes the operation status of the substrate processing apparatus. A user interface consisting of a display or the like that is displayed in the same way, a control program for executing processes executed in the substrate processing apparatus under the control of a process controller, and a program for executing processes in each component unit in accordance with various data and process conditions, that is, A storage unit in which processing recipes are stored may be provided. Also, the user interface and storage may be connected to the process controller. The processing recipe may be stored in a storage medium of the storage unit, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or a DVD, or a semiconductor memory such as a flash memory.

The controller 30 may control the substrate processing apparatus to perform a substrate processing method described below. For example, the controller 30 may control the fluid supply unit 530 and the fluid discharge unit 550 to perform a substrate processing method described below.

The processing module 20 includes a buffer unit 200 , a transfer chamber 300 , a liquid processing chamber 400 , a drying chamber 500 , and a post-processing chamber 600 . The buffer unit 200 provides a space in which the substrate W carried into the processing module 20 and the substrate W transported out of the processing module 20 temporarily stay. The liquid processing chamber 400 performs a liquid processing process of liquid treating the substrate W by supplying liquid onto the substrate W. The drying chamber 500 performs a drying process of removing liquid remaining on the substrate W. The transfer chamber 300 transfers the substrate W between the buffer unit 200 , the liquid processing chamber 400 , the drying chamber 500 , and the post-processing chamber 600 .

The transfer chamber 300 may be provided in a first direction (X) in its longitudinal direction. The buffer unit 200 may be disposed between the index module 10 and the transfer chamber 300 . The liquid processing chamber 400 and the drying chamber 500 may be disposed on the side of the transfer chamber 300 . The liquid processing chamber 400 and the transfer chamber 300 may be disposed along the second direction (Y). The drying chamber 500 and the transfer chamber 300 may be disposed along the second direction (Y). The buffer unit 200 may be located at one end of the transfer chamber 300 .

According to one example, the liquid processing chambers 400 are disposed on both sides of the transfer chamber 300, the drying chambers 500 are disposed on both sides of the transfer chamber 300, and the post-processing chambers 600 are disposed on both sides of the transfer chamber ( 300), the liquid processing chambers 400 are disposed closer to the buffer unit 200 than the drying chambers 500, and the drying chambers 500 are closer to the buffer unit than the post processing chambers 600. It may be placed in a location closer to unit 200. However, it is not limited thereto, and the post treatment chamber 600 is closest to the buffer unit 200, the liquid treatment chamber 400 is the farthest from the buffer unit 200, and the drying chamber 500 is the post treatment chamber 600. ) and the liquid processing chamber 400. In this case, the substrate (W) post-processed in the post-processing chamber 600 is directly transferred to the buffer unit 200, and particles are attached to the substrate (W) in the process of transporting the substrate (W) on which the last treatment is completed. possible risks can be minimized.

On one side and/or the other side of the transfer chamber 300, the liquid processing chambers 400 are arranged along the first direction (X) and the third direction (Z), respectively, A X B (A and B are 1 or a natural number greater than 1, respectively). can be provided as In addition, the drying chambers 500 on one side and/or the other side of the transfer chamber 300 are respectively C X D along the first direction (X) and the third direction (Z) (C and D are respectively 1 or a natural number greater than 1). Dogs may be provided. In addition, the post-processing chambers 600 on one side and/or the other side of the transfer chamber 300 are respectively E X F (E and F are each 1 or a natural number greater than 1) along the first direction (X) and the third direction (Z). ) can be provided.

The transfer chamber 300 has a transfer robot 320 . A guide rail 324 provided in the first direction X is provided in the transfer chamber 300 , and the transfer robot 320 may be provided to be movable on the guide rail 324 . The transfer robot 320 includes a hand 322 on which the substrate W is placed, and the hand 322 moves forward and backward, rotates about an axis in the third direction Z, and moves in the third direction Z. It may be provided to be movable along. A plurality of hands 322 are provided spaced apart in the vertical direction, and the hands 322 may move forward and backward independently of each other.

The buffer unit 200 includes a plurality of buffers 220 on which the substrate W is placed. The buffers 220 may be disposed to be spaced apart from each other along the third direction (Z). The front face and rear face of the buffer unit 200 are open. The front side is a side facing the index module 10, and the rear side is a side facing the transfer chamber 300. The index robot 120 may approach the buffer unit 200 through the front side, and the transfer robot 320 may approach the buffer unit 200 through the rear side.

FIG. 2 is a cross-sectional view schematically showing an embodiment of the liquid processing chamber of FIG. 1 .

Referring to FIG. 2 , the liquid processing chamber 400 includes a housing 410 , a cup 420 , a support unit 440 , a liquid supply unit 460 , and a lift unit 480 .

The housing 410 may have an inner space in which the substrate W is processed. The housing 410 may have a substantially hexahedral shape. For example, the housing 410 may have a rectangular parallelepiped shape. In addition, an opening (not shown) through which the substrate W is loaded or unloaded may be formed in the housing 410 . In addition, a door (not shown) may be installed in the housing 410 to selectively open and close the opening.

The cup 420 may have a cylindrical shape with an open top. The cup 420 has a processing space, and the substrate W may be liquid-processed in the processing space. The support unit 440 supports the substrate W in the processing space. The liquid supply unit 460 supplies the treatment liquid onto the substrate W supported by the support unit 440 . A plurality of types of treatment liquids may be provided and sequentially supplied onto the substrate W. The lifting unit 480 adjusts the relative height between the cup 420 and the support unit 440 .

According to one example, the cup 420 has a plurality of collection containers 422 , 424 , and 426 . The recovery containers 422 , 424 , and 426 each have a recovery space for recovering liquid used in substrate processing. Each of the collection containers 422 , 424 , and 426 is provided in a ring shape surrounding the support unit 440 . During the liquid treatment process, the treatment liquid scattered by the rotation of the substrate W flows into the recovery space through the inlets 422a, 424a, and 426a of the recovery containers 422, 424, and 426, respectively. According to one example, the cup 420 has a first collection container 422 , a second collection container 424 , and a third collection container 426 . The first collection container 422 is disposed to surround the support unit 440, the second collection container 424 is disposed to surround the first collection container 422, and the third collection container 426 is disposed to surround the second collection container 426. It is disposed so as to surround the collection container 424. The second inlet 424a for introducing liquid into the second collection container 424 is located above the first inlet 422a for introducing liquid into the first collection container 422, and the third collection container 426 The third inlet 426a through which the liquid flows into may be located above the second inlet 424a.

The support unit 440 has a support plate 442 and a driving shaft 444 . The upper surface of the support plate 442 may be provided in a substantially circular shape and may have a larger diameter than the substrate W. A support pin 442a is provided at the center of the support plate 442 to support the rear surface of the substrate W, and the upper end of the support pin 442a is such that the substrate W is spaced apart from the support plate 442 by a predetermined distance. 442). A chuck pin 442b is provided at an edge of the support plate 442 . The chuck pin 442b protrudes upward from the support plate 442 and supports the side of the substrate W to prevent the substrate W from being separated from the support unit 440 when the substrate W is rotated. The driving shaft 444 is driven by the driving unit 446, is connected to the center of the lower surface of the substrate W, and rotates the support plate 442 about its central axis.

According to one example, the liquid supply unit 460 may include a nozzle 462 . The nozzle 462 may supply the treatment liquid to the substrate (W). The treatment liquid may be a chemical, a rinse liquid or an organic solvent. The chemical may be a chemical having the properties of a strong acid or a strong base. Also, the rinse liquid may be pure water. Also, the organic solvent may be isopropyl alcohol (IPA). In addition, the processing liquid supplied by the liquid supply unit 460 may be a developing liquid. For example, the developing solution supplied by the liquid supply unit 460 may include N-Butyl Acetate.

Also, the liquid supply unit 460 may include a plurality of nozzles 462 , and each of the nozzles 462 may supply different types of treatment liquids. For example, one of the nozzles 462 may supply a chemical, another of the nozzles 462 may supply a rinse liquid, and another one of the nozzles 462 may supply an organic solvent. In addition, after supplying the rinse liquid to the substrate W from the other one of the nozzles 462, the controller 30 operates the liquid supply unit 460 to supply the organic solvent from another one of the nozzles 462. You can control it. Accordingly, the rinsing liquid supplied onto the substrate W may be replaced with an organic solvent having a low surface tension. In addition, one of the nozzles 462 may supply a developing solution.

The lifting unit 480 moves the cup 420 up and down. The relative height between the cup 420 and the substrate W is changed by the vertical movement of the cup 420 . As a result, since the collection containers 422, 424, and 426 for collecting the processing liquid are changed according to the type of liquid supplied to the substrate W, the liquids can be separately collected. Unlike the above description, the cup 420 is fixedly installed, and the lifting unit 480 may move the support unit 440 in the vertical direction.

3 is a cross-sectional view schematically showing an embodiment of the drying chamber of FIG. 1 .

Referring to FIG. 3 , the drying chamber 500 according to an embodiment of the present invention may remove the processing liquid remaining on the substrate W by using the processing fluid SC in a supercritical state. The treatment liquid to be removed may be any one of the above-described chemical, rinsing liquid, organic solvent, and developing liquid. Also, the treatment fluid SC may include carbon dioxide (CO ₂ ). For example, the drying chamber 500 may remove the developing solution of N-butyl acetic acid remaining on the substrate W from the substrate W by using carbon dioxide (CO ₂ ) in a supercritical state.

The drying chamber 500 may include a body 510, a heating member 520, a fluid supply unit 530, a support member 540, a fluid discharge unit 550, and an elevating member 560.

The body 510 may have an inner space 511 in which the substrate W is processed. The body 510 may provide an inner space 511 in which the substrate W is processed. The body 510 may provide an internal space 511 in which the substrate W is dried and processed by the processing fluid SC in a supercritical state. The body 510 may also be referred to as a chamber.

The body 510 may include an upper body 512 and a lower body 514 . The upper body 512 and the lower body 514 may be combined with each other to form the inner space 511 . Any one of the upper body 512 and the lower body 514 may be coupled to the elevating member 560 and move in a vertical direction. For example, the lower body 514 may be coupled to the elevating member 560 and moved vertically by the elevating member 560 . Accordingly, the inner space 511 of the body 510 may be selectively sealed. In the above example, the lower body 514 is coupled to the elevating member 560 and moved in the vertical direction as an example, but is not limited thereto. For example, the upper body 512 may be coupled with the elevating member 560 to move vertically.

The heating member 520 may heat the treatment fluid SC supplied to the inner space 511 . The heating member 520 may increase the temperature of the inner space 511 of the body 510 . As the heating member 520 raises the temperature of the inner space 511 , the processing fluid SC supplied to the inner space 511 may be converted to a supercritical state or maintained in a supercritical state.

Also, the heating member 520 may be embedded in the body 510 . For example, the heating member 520 may be embedded in any one of the upper body 512 and the lower body 514 . For example, a heating element 520 may be provided within the lower body 514 . However, it is not limited thereto, and the heating member 520 may be provided in various positions capable of increasing the temperature of the inner space 511 . Also, the heating member 520 may be a heater. However, it is not limited thereto, and the heating member 520 may be variously modified as a known device capable of raising the temperature of the inner space 511 .

The fluid supply unit 530 may supply the treatment fluid SC to the inner space 511 of the body 510 . The treatment fluid SC supplied by the fluid supply unit 530 may include carbon dioxide (CO ₂ ). The fluid supply unit 530 may include a fluid supply source 531, a first supply line 533, a first supply valve 535, a second supply line 537, and a second supply valve 539. .

The fluid supply source 531 may store the processing fluid SC supplied to the inner space 511 of the body 510 or supply the processing fluid SC to the inner space 511 . The fluid supply source 531 may supply the processing fluid SC to the inner space 511 via the first supply line 533 and/or the second supply line 537 . In addition, a first supply valve 535 may be installed in the first supply line 533 . In addition, a second supply valve 539 may be installed in the second supply line 537 . The first supply valve 535 and the second supply valve 539 may be on/off valves, for example, open/close valves. Optionally, the first supply valve 535 and the second supply valve 539 may be flow control valves. The treatment fluid SC may selectively flow through the first supply line 533 or the second supply line 537 according to the opening and closing of the first supply valve 535 and the second supply valve 539 .

One end of the first supply line 533 may communicate with the inner space 511 . The first supply line 533 may be an upper supply line supplying the processing fluid SC, which is a drying gas, from the upper part of the inner space 511 of the body 510 . At least a part of the first supply line 533 may be provided to the upper body 512 . Also, the first supply line 533 may be configured such that the processing fluid SC is supplied toward the upper surface of the substrate W supported by the support member 540 . For example, the processing fluid SC supplied from the first supply line 533 may be supplied to the upper surface of the substrate W. The treatment fluid SC supplied from the first supply line 533 may flow from top to bottom. For example, the processing fluid SC supplied from the first supply line 533 may flow from an upper region of the substrate W supported in the inner space 511 toward a lower region of the substrate W.

One end of the second supply line 537 may communicate with the inner space 511 . The second supply line 537 may be a lower supply line supplying the processing fluid SC, which is a drying gas, from the lower part of the inner space 511 of the body 510 . At least a part of the second supply line 537 may be provided to the lower body 514 . In addition, the second supply line 537 may be configured to supply the processing fluid SC to a lower region of the substrate W supported by the support member 540 . For example, the treatment fluid SC supplied from the second supply line 537 may flow from bottom to top. For example, the processing fluid SC supplied from the second supply line 537 may flow from a lower region of the substrate W supported in the inner space 511 toward an upper region of the substrate W.

In the above example, the first supply line 533 and the second supply line 537 are connected to one fluid supply source 531, but it has been described as an example, but is not limited thereto. For example, a plurality of fluid supply sources 531 are provided, a first supply line 533 is connected to any one of the plurality of fluid supply sources 531, and a second supply line 537 is one of the fluid supply sources 531. It can also be linked to another one.

In addition, the first supply line 533, the second supply line 537, or the point where the first supply line 533 and the second supply line 537 are connected and the fluid supply source 531 mentioned in the above example Substrates such as a pressure sensor, a temperature sensor, a flow control valve, an orifice, and a heater may be variously installed and disposed on the line between the two lines.

The support member 540 may support the substrate W in the inner space 511 . The support member 540 may be configured to support an edge area of the substrate W in the inner space 511 . For example, the support member 540 may be configured to support the lower surface of the edge region of the substrate W in the inner space 511 .

The fluid discharge unit 550 may discharge the treatment fluid SC from the inner space 511 of the body 510 to the outside. The fluid discharge unit 550 may include a fluid discharge line 551 and a discharge valve 553 . One end of the fluid discharge line 551 may communicate with the inner space 511 . At least a portion of the fluid discharge line 551 may be provided to the lower body 514 . When the fluid discharge line 551 discharges the treatment fluid SC from the internal space 511 , the fluid discharge line 551 may flow in a direction from top to bottom of the internal space 511 .

In addition, a discharge valve 553 may be installed in the fluid discharge line 551 . Discharge valve 553 may be an on/off valve, such as an on/off valve. The discharge valve 553 may be a flow control valve. Various substrates such as an orifice, a pressure sensor, a temperature sensor, and a pump may be installed and disposed in the fluid discharge line 551 .

FIG. 4 is a cross-sectional view schematically showing an embodiment of a heating unit provided in the post-treatment chamber of FIG. 1 , and FIG. 5 is a plan view schematically showing the heating assembly of FIG. 4 .

Referring to FIGS. 4 and 5 , the post-processing chamber 600 includes a chamber (not shown) providing a space in which the substrate W is post-processed, an exhaust member (not shown) exhausting the atmosphere of the space within the chamber, and A heating unit for heating the substrate W may be included. 4 shows a heating unit 601 provided in the post treatment chamber 600 . The heating unit 601 provided in the post-processing chamber 600 includes a chuck 610, a pin 620, a window 630, a heating assembly 640, a shaft 650, an actuator 660, and an insulation plate ( 670) may be included.

The chuck 610 may have a plate shape. When viewed from above, an opening may be formed in a central region of the chuck 610 . The chuck 610 may have a plate shape with an opening formed in its central region. A shaft 650 to be described later may be inserted into the opening formed in the chuck 610 . For example, at least a portion of an inner shaft 652 to be described below may be inserted into an opening formed in the chuck 610 .

The window 630 may be provided with a transparent material. The window 630 may be made of a quartz material. The window 630 may be made of a transparent quartz material. The window 630 may be provided with a material through which light LI emitted from a heating light source 641 to be described later may be transmitted. The window 630 may have a cylindrical shape with an open bottom. The window 630 may have a cover shape covering the chuck 610 . The window 630 is installed above the chuck 610 and may be combined with the chuck 610 to form an inner space IS. A heating assembly 640 to be described below may be disposed in the inner space IS.

Pins 620 may be installed in each of the chuck 610 and the window 630 . The pin 620 may separate the lower surface of the substrate W and the upper surface of the window 630 from each other. The pin 620 may make line or point contact with the substrate W. The pin 620 may include a chuck pin 621 and a support pin 622 . The chuck pin 621 may be configured to support the side of the substrate (W). The chuck pin 621 may be installed in the chuck 610 . The chuck pin 621 may be movably installed in the chuck 610 in a lateral direction. For example, the chuck pin 621 may be provided to be movable in the lateral direction by a drive mechanism made of screws, gears, etc. (not shown). Also, the chuck pin 621 may be made of a material having low thermal conductivity. The chuck pin 621 may be provided with a material including ceramic. The support pin 622 may be installed in the window 630 . The support pin 622 may support the lower surface of the substrate (W). The support pin 622 may be provided with the same material as the window 630 . For example, the support pin 622 may be made of a quartz material. In addition, a plurality of chuck pins 621 and support pins 622 may be provided.

When the substrate W is loaded into the chamber of the post-processing chamber 600 and placed on the heating unit, the chuck pin 621 moves in a direction toward the outside of the chuck 610, and the substrate W is moved to the hand 322. ) can be seated on the support pin 622. When the substrate W is seated on the support pin 622, the chuck pin 621 may move in a direction toward the inside of the chuck 610 to chuck the side of the substrate W.

The heating assembly 640 may heat the substrate W supported by the pins 620 . The heating assembly 640 may be disposed in an inner space IS defined by a combination of the chuck 610 and the window 630 . The heating assembly 640 may include a heating light source 641 , a light source substrate 642 , and a heat sink 643 .

The heating light source 641 may emit light LI for heating the substrate W. The heating light source 641 may emit light LI for heating a substrate W such as a wafer. The heating light source 641 may be an LED heater. At least one heating light source 641 may be provided. A plurality of heating light sources 641 may be provided. The heating light sources 641 may be arranged along the circumferential direction of the light source substrate 642 . Also, the heating light sources 641 may be spaced apart from each other along the radial direction of the light source substrate 642 .

Heating light sources 641 may be installed on the light source substrate 642 . The light source substrate 642 may be a PCB substrate. The light source substrate 642 may include a base substrate 642a and side substrates 642b.

The base substrate 642a may be installed on a heat sink 643 to be described later. A side substrate 642b may be installed at an edge area of the base substrate 642a. The side substrate 642b may be a substrate configured to allow the heating light source 641 to emit light LI toward an edge area of the substrate W. That is, the inner circle 641a may be installed on the base substrate 642a, and the outer light source 641b may be installed on the side substrate 642b. The external light source 641b may be installed on the side substrate 642b to emit light LI in an upward direction toward the outside of the chuck 610 .

Since the number of heating light sources 641 involved in heating the central region and/or the middle region of the substrate W is large, the temperature of the substrate W may rise rapidly. However, since the number of heating light sources 641 involved in heating the corresponding region is relatively small, the temperature of the edge region of the substrate W may rise relatively slowly. In order to reduce the temperature control deviation, the external light source 641b may be configured to emit light LI at an upward slope toward the edge region of the substrate W. The external light source 641b installed on the side substrate 641b is illustrated as an example of a light source disposed on the outermost side of the heating light sources 641, but is not limited thereto. For example, the outside light source 641b installed on the side substrate 641b may include secondary outside light sources as well as outermost light sources. For example, although the external light sources 641b are illustrated as being arranged in one line along the circumferential direction of the light source substrate 642 in FIG. 5 , the external light sources 641b are arranged along the circumferential direction of the substrate 642 Depending on the degree of heating required for the edge area of the substrate W, such as 2 lines, 3 lines, or 4 lines, it may be configured and arranged in various ways.

In addition, the heating assembly 640 may be configured such that the heating light sources 641 can be turned on and off independently of each other. Also, the heating assembly 640 may be configured such that the output of the light LI emitted from the heating light sources 641 can be independently adjusted. That is, the controller 30 controls the heating assembly 640 to turn on/off the heating light sources 641 independently of each other, and also controls the output of the light LI emitted from the heating light sources 641 independently of each other. can Accordingly, heating of a local area of the substrate W is also possible. For example, temperature control of a specific area of the substrate W along the radial direction of the substrate W is possible.

A heat sink 643 may be disposed below the light source substrate 642 . The heat sink 643 may dissipate heat from the light source substrate 642 . The light LI emitted from the heating light source 641 may heat not only the substrate W but also the light source substrate 642. If the temperature of the light source substrate 642 becomes excessively high, the heating assembly 640 is properly may not be able to drive. Similarly, if the temperature of the heating light source 641 is excessively high, the heating assembly 640 may not be properly driven. Accordingly, the heat sink 643 may dissipate heat from the light source substrate 642 and/or the heating light source 641 to prevent the temperature of the light source substrate 642 and/or the heating light source 641 from becoming excessively high. there is.

A cooling passage 643a may be formed in the heat sink 643 . The cooling passage 643a may receive cooling fluid (eg, cooling water) from the cooling fluid supply line SCL. The cooling fluid supply line SCL may be connected to the cooling fluid supply source CS. The cooling fluid circulates and moves through the cooling passage 643a, and the cooling fluid that has circulated through the cooling passage 643a may be discharged to the outside through the cooling fluid discharge line DCL.

The shaft 650 may relatively rotate the substrate W with respect to the heating assembly 640 . The shaft 650 may include an outer shaft 651 and an inner shaft 652 . The outer shaft 651 and the inner shaft 652 may each have a hollow shape. The outer shaft 651 may be connected to the chuck 610 . The inner shaft 652 may be disposed (inserted) within the outer shaft 651 . The inner shaft 652 may be connected to the heat sink 643 .

The outer shaft 651 may be coupled with an actuator 660 which may be a hollow motor. The actuator 660 may rotate the outer shaft 651 . The inner shaft 652 may be connected to the heat sink 643 . The inner shaft 652 may not rotate. A bearing B may be installed between the inner shaft 652 and the outer shaft 651 .

With rotation of the outer shaft 651, the chuck 610, the window 630, and the pin 620 can be rotated. The inner shaft 652 and heating assembly 640 can be independent from rotation of the outer shaft 651 , chuck 610 , window 630 , and pin 620 .

Hereinafter, a substrate processing method according to an embodiment of the present invention will be described. The substrate processing method described below may be performed by the above-described substrate processing apparatus. To perform a substrate processing method described below, the controller 30 may control the index module 10 and the processing module 20 .

Referring to FIG. 6 , the substrate processing method according to an embodiment of the present invention may include a liquid processing step ( S10 ), a drying step ( S20 ), and a post-processing step ( S30 ).

The liquid processing step ( S10 ) may be performed in the liquid processing chamber 400 . In the liquid processing step S10 , the substrate W may be processed by supplying the treatment liquid L to the substrate W (see FIG. 7 ). In the liquid processing step S10 , the substrate W may be processed by supplying the treatment liquid L to the rotating substrate W. The treatment liquid L supplied to the substrate W in the liquid treatment step S10 may be DI water (deionized water). In addition, the processing liquid L supplied to the substrate W may be included in the liquid processing step S10. The treatment liquid L supplied to the substrate W may include an organic solvent. The treatment liquid L supplied to the substrate W may be isopropyl alcohol (IPA).

For example, in the liquid treatment step (S10), DI water may be supplied to the rotating substrate (W) to clean the substrate (W). Thereafter, in order to remove the DI water remaining between the patterns formed on the substrate (W), IPA having a relatively low surface tension is supplied to the rotating substrate (W) to remove the DI water remaining on the substrate (W). can be replaced with

The substrate W on which the liquid treatment step ( S10 ) has been performed may be transported to the drying chamber 500 . A drying step ( S20 ) of drying the substrate W may be performed in the drying chamber 500 . In the drying step S20 , the substrate W may be dried by supplying the processing fluid SC to the substrate W (see FIG. 8 ). The treatment fluid SC may include carbon dioxide (CO ₂ ). The treatment fluid SC may be a fluid in a supercritical state. The processing fluid SC in a supercritical state may penetrate between the patterns formed on the substrate W and remove the processing fluid L, eg, IPA, remaining on the substrate W.

The substrate W on which the drying step ( S20 ) has been performed may be transported to the post-processing chamber 600 . In the post-processing chamber 600 , post-processing may be performed on the substrate W on which the drying step (S20) has been performed. Post-processing may remove residue (which may include alcohol and/or organic components) remaining on the substrate W by heating the substrate W (see FIG. 9 ). In the post-processing step (S30), the substrate (W) is supported by the pins 620 installed on the chuck 610, and the heating light source 641 emits light (LI) for heating the substrate (W) to ) may be removed from the substrate W.

In addition, in the post-processing step (S30), the substrate W supported by the heating unit 601 may be rotated to adjust the heating position of the substrate W. When the substrate W is rotated and the heating position of the substrate W is adjusted, the heating assembly 640 may heat the substrate W. While the heating assembly 640 heats the substrate W, the chuck 610 and the heating light source 641 may not rotate.

In the post-processing step (S30), the entire substrate W may be heated, or only a local area of the substrate W may be heated if necessary. In the case of heating only a local area of the substrate W, selected heating light sources 641 among a plurality of heating light sources 641 emit light LI for heating the substrate W to remove residues from the substrate W. can be removed from For example, the treatment fluid SC may be supplied in a relatively concentrated manner to the central region of the substrate W. In this case, the drying efficiency of the central region of the substrate W is relatively higher than that of the edge region of the substrate W. could be higher That is, a relatively large amount of residue may remain in the edge region of the substrate W. In this case, among the plurality of heating light sources 641, the heating light source 641 corresponding to the edge area of the substrate W increases the light LI radiating output, and the heating light source corresponding to the central area of the substrate W Residue remaining on the edge area of the substrate W can be effectively removed by relatively reducing the light LI emission output of the 641 .

After the substrate W is dried using the treatment fluid SC, which is a fluid in a supercritical state, a small amount of alcohol and/or organic components may remain on the substrate W unless a separate post-treatment process is performed. . Such alcohol and/or organic components may generate particles and cause a leaning phenomenon in which the pattern of the substrate W collapses. However, according to an embodiment of the present invention, the substrate (W) is heat-treated by radiating light (LI) to the substrate (W), which has been subjected to a drying process, so that the above-described alcohol and/or organic components remain on the substrate (W). can be minimized.

In addition, when the substrate (W) is subjected to post-processing after the drying process, when the substrate (W) is heated by surface-contacting the substrate (W) using a heating plate, the particles attached to the heating plate are transferred to the substrate (W). may contaminate the substrate (W), but in the present invention, the substrate (W) is supported in line or in contact with the pins 620 of the heating unit 601, and the lower surface of the substrate (W) is the upper surface of the window 630 Since it is provided apart from the substrate W, contamination of the substrate W during the post-processing of the substrate W can be minimized.

In addition, when the substrate W is heated using a flash lamp or the like after the drying process, a sudden temperature rise may occur. In this case, thermal shock is transmitted to the pattern and surface of the substrate W, and the pattern and surface of the substrate W may be damaged. However, since the present invention uses an LED heater to heat the substrate (W), it is possible to minimize the occurrence of sudden temperature increase. In particular, as the LED heaters are individually controlled, local temperature control for a specific area of the substrate (W) is possible.

FIG. 10 is a diagram showing temperature measurement points at which the temperature of a substrate is measured during the post-processing step of FIG. 6 , and FIG. 11 is a graph showing temperature changes over time at temperature measurement points of FIG. 10 . Temperature measurement points of FIG. 10 may include SP1 to SP8. In FIG. 11 , it is possible to show the temperature change of the substrate W according to the time of each of SP1 to SP8. When the substrate W is heated using the heating unit 601 of the present invention, when the substrate W is uniformly heated to a temperature of about 300 ° C., as shown in FIGS. 10 and 11, at t1 to t2 The temperature of the substrate W may be controlled such that a temperature difference between SP1 to SP8 is 7 to 10 °C.

In the above-described example, it has been described that the driver 660 rotates the outer shaft 651 as an example, but is not limited thereto. For example, drive 660 may be configured to rotate inner shaft 652 .

The above detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and describe preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed in this specification, within the scope equivalent to the written disclosure and / or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in the specific application field and use of the present invention are also possible. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to cover other embodiments as well.

Liquid treatment chamber: 400
Drying chamber: 500
Post processing chamber: 600
Chuck: 610
Pin: 620
Chuckpin: 621
Support pin: 622
Windows: 630
Inner Space: IS
Heating assembly: 640
Heating light source: 641
Inner light source: 641a
External light source: 641b
Light source board: 642
Base board: 642a
Side board: 642b
Heatsink: 643
Cooling flow: 643a
Cooling fluid supply line: SCL
Cooling Fluid Discharge Line: DCL
Cooling Fluid Source: CS
Bearing: B
Shaft: 650
Outer Shaft: 651
Inner Shaft: 652
Actuator: 660
Insulation board: 670

Claims (13)

In the apparatus for processing a substrate:
a liquid processing chamber that processes the substrate by supplying a processing liquid to the substrate;
a drying chamber for drying the substrate processed in the liquid processing chamber; and
A post-processing chamber for post-processing the substrate processed in the drying chamber;
The post-processing chamber,
chuck;
at least one pin installed on the chuck and supporting a substrate;
a window installed above the chuck and combined with the chuck to form an inner space; and
and a heating assembly disposed in the inner space and configured to heat the substrate supported by the pins. According to claim 1,
The heating assembly:
a plurality of heating light sources disposed in the inner space and emitting light to heat the substrate;
a light source substrate on which the heating light sources are installed; and
A substrate processing apparatus comprising a heat sink disposed under the light source substrate. According to claim 2,
A heating light source disposed at an outermost part of the heating light sources is configured to emit light inclined upward in a direction toward the outside of the chuck. According to claim 2,
The heating assembly:
When viewed from above, the substrate processing apparatus further comprises a heat insulating plate installed between the heating light source disposed on the outermost side of the heating light source and the pin. According to claim 2,
When viewed from above, an opening is formed in the central region of the chuck,
The post-processing chamber:
and a shaft inserted into the opening and installed under the heat sink and the light source substrate. According to claim 5,
The shaft is:
an outer shaft connected to the chuck; and
A substrate processing apparatus comprising an inner shaft disposed within the outer shaft and connected to the heat sink. According to claim 6,
The post-processing chamber:
Further comprising a driver for rotating the outer shaft,
The chuck and the window are configured to rotate together,
The heat sink and the light source substrate are configured to be independent of rotation of the chuck. According to any one of claims 2 to 7,
The heating light source is an LED (LED) heater substrate processing apparatus. According to any one of claims 2 to 7,
The heating light sources are arranged spaced apart from each other along a circumferential direction of the light source substrate and along a radial direction of the light source substrate when viewed from above. In the method of treating a substrate:
a liquid processing step of processing the substrate by supplying a processing liquid to the substrate;
a drying step of drying the substrate on which the liquid processing step has been performed; and
And a post-processing step of heating and post-processing the substrate on which the drying step has been performed,
In the post-processing step, the substrate is supported by chuck pins installed in the chuck, and a heating light source disposed in an internal space formed by combining the chuck and a window disposed above the chuck emits light for heating the substrate. A substrate processing method for removing residues remaining on the substrate from the substrate. According to claim 10,
A plurality of the heating light sources are provided,
In the post-processing step, selected heating light sources among the heating light sources emit light for heating the substrate to remove the residue from the substrate. According to claim 10 or 11,
In the post-processing step, the chuck and the heating light source are not rotated. According to claim 10 or 11,
The heating light source is an LED (LED) heater substrate processing method.

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