KR102550896B1 - Apparatus for treating substrate - Google Patents

Abstract

The present invention provides an apparatus for processing a substrate. The substrate processing apparatus includes a first process processing unit that liquid-processes a plurality of substrates in a batch manner; and a second process processing unit that processes the substrate processed in the first processing unit and liquid-processing or drying-processing one substrate in a single-wafer manner.

Description

Substrate processing device {APPARATUS FOR TREATING SUBSTRATE}

The present invention relates to a substrate processing apparatus.

In order to manufacture a semiconductor device, a desired pattern is formed on a substrate such as a wafer through various processes such as photolithography, etching, ashing, ion implantation, and thin film deposition. Various treatment liquids and treatment gases are used in each process, and particles and process by-products are generated during the process. A liquid treatment process is performed on the substrate before and after each process to remove the thin film, particles, and process by-products on the substrate from the substrate. In a general liquid treatment process, a substrate is treated with a chemical and a rinsing liquid and then dried. In the liquid treatment process, SiN on the substrate can be stripped.

In addition, a method of treating substrates with a chemical and a rinsing liquid can be roughly divided into a batch processing method in which a plurality of substrates are collectively processed, and a single-wafer processing method in which substrates are processed one by one.

In a batch processing method for collectively processing a plurality of substrates, substrate processing is performed by collectively immersing a plurality of substrates in a vertical position in a treatment tank in which a chemical or rinse liquid is stored. For this reason, the mass productivity of substrate processing is excellent, and the processing quality between each substrate is uniform. However, in the batch processing method, a plurality of substrates having patterns formed thereon are immersed in a vertical position. Accordingly, when the pattern formed on the substrate has a high aspect ratio, a pattern leaning phenomenon may occur in the pattern formed on the substrate during a process such as lifting the substrate. In addition, when a plurality of substrates are exposed to the air at once and the drying process is not performed within a short period of time, water marks may be generated on some of the plurality of substrates exposed to the air.

On the other hand, in the case of the single-wafer processing method in which substrates are processed one by one, substrate processing is performed by supplying a chemical or rinse liquid to a single substrate rotating in a horizontal posture. In addition, in the single-wafer processing method, since the conveyed substrate maintains a horizontal posture, the risk of the above-described pattern thinning phenomenon is reduced, and the substrate is processed one by one, and the treated substrate is immediately subjected to dry treatment or liquid treatment. Therefore, the risk of occurrence of the aforementioned watermark is small. However, in the case of the single-wafer processing method, the mass productivity of substrate processing is poor, and the processing quality of each substrate is relatively non-uniform compared to the batch processing method.

In addition, when the substrate is rotated and spin-dried, when the pattern formed on the substrate has a high aspect ratio, a leaning phenomenon in which the pattern formed on the substrate collapses may occur.

An object of the present invention is to provide a substrate processing apparatus capable of efficiently processing a substrate.

In addition, an object of the present invention is to provide a substrate processing apparatus capable of improving mass productivity of substrate processing.

Another object of the present invention is to provide a substrate processing apparatus capable of further increasing the uniformity of processing quality between each substrate.

Another object of the present invention is to provide a substrate processing apparatus capable of minimizing the risk of water marks on a substrate.

In addition, an object of the present invention is to provide a substrate processing apparatus capable of minimizing the occurrence of a leaning phenomenon in a pattern formed on a substrate.

Another object of the present invention is to provide a substrate processing apparatus capable of efficiently processing a substrate on which a pattern having a high aspect ratio is formed.

The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the description below.

The present invention provides an apparatus for processing a substrate. The substrate processing apparatus includes a first process processing unit that liquid-processes a plurality of substrates in a batch manner; and a second process processing unit that processes the substrate processed in the first processing unit and liquid-processing or drying-processing one substrate in a single-wafer manner.

According to an embodiment, the first process unit includes a first load port unit in which a container containing an unprocessed substrate is placed, and the second process unit includes a second rod in which a container in which a processed substrate is stored is placed. A port unit may be included.

According to an embodiment, the first process processing unit includes a placement hand for transporting a plurality of substrates unloaded from a container placed in the first load port unit, and the second process processing unit includes the first process processing unit. A sheet-fed hand for conveying a single substrate subjected to liquid processing in the unit may be included.

According to an embodiment, the second processing unit may include a single-wafer type processing chamber for liquid-processing and/or drying-processing of the substrate in a single-wafer type; and a second buffer unit disposed between the single wafer processing chamber and the second load port unit and temporarily storing the substrate processed in the single wafer processing chamber.

According to an embodiment, the second processing unit may include a single-wafer type processing chamber for liquid-processing and/or drying-processing of the substrate in a single-wafer type; and a first buffer unit disposed between the first processing unit and the sheet type processing chamber and temporarily storing the substrate processed in the first processing unit.

According to an embodiment, the first process treatment unit may include a treatment tank having an accommodation space in which a treatment liquid is accommodated; a storage container submerged in the processing liquid contained in the accommodation space and having a storage space for accommodating substrates; and a posture changing member configured to rotate the storage container in a state submerged in the treatment liquid.

According to one embodiment, the posture changing member may include a rotation unit mountable to the storage container and rotating the storage container; and a moving unit installed in the treatment tank and horizontally moving the storage container mounted on the rotating unit.

According to an embodiment, the treatment tub may have a tubular shape with an open top, and the moving unit may be installed on a side of the treatment tub.

According to an embodiment, the movable unit may have a 'c' shape with an open portion facing downward so as to be installed across the side of the treatment tub.

According to an embodiment, the first process processing unit further includes an elevating member for vertically moving the storage container rotated by the posture changing member, and the elevating member is detachably provided from the storage container. It can be.

According to an embodiment, the second process unit further includes a first buffer unit for temporarily storing the liquid-processed substrate in the first process unit, and the apparatus is provided between the storage container and the first buffer unit. A conveyance unit for conveying the substrate may be further included.

According to an embodiment, the apparatus further includes a controller, and the controller causes the elevating member to move the storage container in an upward direction to transfer the substrate exposed to the outside from the storage container to the first buffer unit. The elevating member and the conveying unit may be controlled.

According to an embodiment, the apparatus further includes a controller, wherein the controller is configured to take out a substrate disposed at the top of the substrates stored in the storage container from the storage container and transport it to the first buffer unit. The transport unit can be controlled.

According to an embodiment, the controller controls the storage container so that the uppermost substrate among the substrates stored in the storage container is exposed to the outside after the uppermost substrate is taken out of the storage container. It is possible to control the elevating member to move in an upward direction.

In addition, the present invention provides an apparatus for processing a substrate. A substrate processing apparatus includes a batch type processing chamber for cleaning a plurality of substrates in a batch type; a single-wafer type processing chamber for processing the substrates processed in the batch-type processing chamber and drying one substrate in a single-wafer type; and a transfer unit that transfers the substrate between the batch processing chamber and the single wafer processing chamber.

According to an embodiment, the batch type processing chamber may include a processing tank having an accommodation space in which a processing liquid is accommodated; and a position changing member that is immersed in the treatment liquid contained in the accommodation space and rotates a storage container having a storage space for accommodating substrates.

According to one embodiment, the posture changing member may include a rotation unit mountable to the storage container and rotating the storage container; and a moving unit installed in the treatment tank and horizontally moving the storage container mounted on the rotating unit.

According to an embodiment, the batch type processing chamber may further include an elevating member configured to vertically move the storage container rotated by the position changing member.

In addition, the present invention provides an apparatus for processing a substrate. The substrate processing apparatus includes a first process processing unit that liquid-processes a plurality of substrates in a batch manner; and a second process processing unit for drying and processing one substrate in a sheet-wafer type, wherein the first process processing unit includes: a first load port unit loaded with only unprocessed substrates; a batch processing chamber for cleaning a plurality of substrates in a batch mode; a first transport module having a batch hand for transporting a plurality of substrates from the first load port unit to the batch processing chamber; and a first buffer unit disposed between the batch processing chamber and the second processing unit to temporarily store a substrate, wherein the second processing unit performs a single wafer drying process on one substrate. chamber; a second transport module having a single-wafer hand for transporting one substrate from the first buffer unit to the single-wafer processing chamber; and a second load port unit for unloading the substrate processed in the single wafer processing chamber.

According to an embodiment, a plurality of single-wafer processing chambers are provided, at least some of the single-wafer processing chambers are arranged to be stacked with the first buffer unit, and other portions of the single-wafer processing chambers are stacked with the first buffer unit. , can be arranged to be stacked on top of each other.

According to one embodiment of the present invention, the substrate can be efficiently processed.

In addition, according to an embodiment of the present invention, mass productivity of substrate processing can be improved.

In addition, according to an embodiment of the present invention, the uniformity of processing quality between each substrate can be further improved.

In addition, according to an embodiment of the present invention, it is possible to minimize the risk of water marks on the substrate.

In addition, according to an embodiment of the present invention, occurrence of a leaning phenomenon in a pattern formed on a substrate can be minimized.

In addition, according to an embodiment of the present invention, a substrate on which a pattern having a high aspect ratio is formed can be efficiently processed.

The effects of the present invention are not limited to the above-mentioned effects, and effects not mentioned will be clearly understood by those skilled in the art from this specification and the accompanying drawings.

1 is a schematic view of a substrate processing apparatus viewed from the top according to an embodiment of the present invention.
FIG. 2 is a side view of the second processing unit of FIG. 1 viewed from one direction.
FIG. 3 is a side view of the second processing unit of FIG. 1 viewed from another direction.
FIG. 4 is a schematic view of the batch type liquid processing chamber and the first transfer chamber of FIG. 1 viewed from the side.
FIG. 5 is a perspective view illustrating a substrate processing apparatus provided in the third batch type liquid processing chamber of FIG. 4 .
FIG. 6 is a cross-sectional view showing a substrate processing apparatus provided in the third batch type liquid processing chamber of FIG. 4 .
FIG. 7 is a view showing how a substrate is processed in the third batch type liquid processing chamber of FIG. 6 .
FIG. 8 is a view showing how a posture of a substrate is changed in the third batch type liquid processing chamber of FIG. 6 .
FIG. 9 is a view showing a state in which a storage container is moved to an upper portion of an elevating member in the third batch type liquid processing chamber of FIG. 6 .
FIG. 10 is a view showing a state in which a substrate disposed at the top among substrates stored in a storage container in the third batch type liquid processing chamber of FIG. 6 is exposed to air.
FIG. 11 is a view showing a state in which a substrate is unloaded from the third batch type liquid processing chamber of FIG. 6 and loaded into a first buffer unit.
FIG. 12 is a view showing a state in which a substrate disposed at the top among substrates stored in a storage container is exposed to the air after the substrate is taken out of the third batch type liquid processing chamber of FIG. 4 .
FIG. 13 is a view showing a state in which a substrate is unloaded from the third batch type liquid processing chamber of FIG. 6 and loaded into a first buffer unit.
FIG. 14 is a view showing a substrate processing apparatus provided in the single wafer type liquid processing chamber of FIG. 1 .
FIG. 15 is a view showing a substrate processing apparatus provided in the drying chamber of FIG. 1 .
16 is a schematic view of a substrate processing apparatus viewed from above according to another embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein. In addition, in describing preferred embodiments of the present invention in detail, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. In addition, the same reference numerals are used throughout the drawings for parts having similar functions and actions.

'Including' a certain component means that other components may be further included, rather than excluding other components unless otherwise stated. Specifically, terms such as "comprise" or "having" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features or It should be understood that the presence or addition of numbers, steps, operations, components, parts, or combinations thereof is not precluded.

Singular expressions include plural expressions unless the context clearly dictates otherwise. In addition, shapes and sizes of elements in the drawings may be exaggerated for clearer description.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms may be used for the purpose of distinguishing one component from another. For example, a first element may be termed a second element, and similarly, the second element may also be termed a first element, without departing from the scope of the present invention.

It is understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, but other elements may exist in the middle. It should be. On the other hand, when a component is referred to as “directly connected” or “directly connected” to another component, it should be understood that no other component exists in the middle. Other expressions describing the relationship between components, such as "between" and "directly between" or "adjacent to" and "directly adjacent to", etc., should be interpreted similarly.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and unless explicitly defined in this application, they are not interpreted in an ideal or excessively formal meaning. .

In addition, components for conveying the substrate W described below, for example, the following conveying units or conveying robots, may be referred to as conveying modules.

Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 16 .

1 is a schematic view of a substrate processing apparatus viewed from above according to an embodiment of the present invention, FIG. 2 is a side view of a second process processing unit of FIG. 1 viewed from one direction, and FIG. 3 is a second process of FIG. 1 This is a side view of the processing unit from the other direction.

Referring to FIGS. 1, 2, and 3 , a substrate processing apparatus 10 according to an embodiment of the present invention includes a first processing unit 100, a second processing unit 200, and a controller 600. ) may be included. When viewed from above, the first process processing unit 100 and the second process processing unit 200 may be arranged along the first direction X. Hereinafter, when viewed from above, a direction perpendicular to the first direction X is referred to as a second direction Y, and a direction perpendicular to the first direction X and the second direction Y is referred to as a third direction. (Z).

The first process processing unit 100 may collectively liquid-process a plurality of substrates W in a batch manner. For example, the first process unit 100 may collectively perform cleaning treatment on a plurality of substrates W in a batch manner. The first process processing unit 100 includes a first load port unit 110, a first index chamber 120, a first transfer chamber 130, a batch liquid processing chamber 140, and a second transfer chamber 150. ) may be included.

The first load port unit 110 may include one or more load ports. Containers F containing one or more substrates W may be placed in the load ports of the first load port unit 110 . A plurality of substrates (W) may be accommodated in the container (F). For example, 25 substrates may be accommodated in the container F. The container F may be called a cassette, a pod, a FOUP, or the like. The container F may be loaded into the first load port unit 110 by the container transport device. The substrates (W) accommodated in the container (F) placed in the first load port unit 110 may be untreated substrates (W) or substrates (W) requiring liquid treatment. In addition, only the container F containing the unprocessed substrate W may be placed in the first load port unit 110 . That is, the first load port unit 110 may serve to load the substrate W to be processed.

The first load port unit 110 may be coupled to the first index chamber 120 . The first index chamber 120 and the first load port unit 110 may be arranged along the second direction (Y). The first index chamber 120 may include a first transfer robot 122 and a posture change unit 124 . The first transfer robot 122 may carry out unprocessed or processing-required substrates W from the container F seated on the first load port unit 110 . The first transfer robot 122 may carry the substrate W from the container F to the storage container C provided in the first index chamber 120 . The first transport robot 122 may have a placement hand capable of holding and transporting a plurality of substrates (eg, 25 substrates) at the same time.

The storage container C may have a substantially tubular shape. The storage container C may have a storage space therein. A plurality of substrates (W) may be accommodated in the storage space of the storage container (C). For example, 50 substrates W may be stored in the storage space of the storage container C. The storage container C may have a cylindrical shape with one side open. A support member for supporting/holding the substrate W may be provided in the storage space of the storage container C.

When the transfer of the substrate W from the container F to the storage container C is completed, the storage container C may be transported to the posture change unit 124 disposed in the first index chamber 120. . The posture change unit 124 may rotate the storage container C. For example, the posture change unit 124 may rotate the storage container C such that the opened portion of the storage container C faces upward. When the open portion of the storage container C is rotated upward, the substrate W stored in the storage container C may change its posture from a horizontal position to a vertical position. The horizontal posture means a state in which the upper surface of the substrate W (eg, the surface on which the pattern is formed) is parallel to the X-Y plane, and the vertical posture means the upper surface of the substrate W is in parallel with the X-Z plane or Y-Z plane. It may mean a state in parallel.

The first transfer chamber 130 may be connected to the first index chamber 120 . The first transfer chamber 130 may include a first transfer unit 132 . The first transport unit 132 may include a transport hand capable of transporting an object. In addition, the conveying hand of the first conveying unit 132 may be provided to be movable along the first direction (X), the second direction (Y), and the third direction (Z). In addition, the conveying hand of the first conveying unit 132 may be rotatably provided in the third direction Z as a rotation axis. The first transport unit 132 may transport at least one substrate W from the first index chamber 120 into a batch-type liquid processing chamber 140 to be described later. For example, the first transport unit 132 may transport the plurality of substrates W from the first index chamber 120 at once and carry them into the batch type liquid processing chamber 140 to be described later. For example, the hand of the first transport unit 132 carries out the storage container C rotated by the posture change unit 124 from the first index chamber 120, and transfers the carried out storage container C to the batch liquid. It may be brought into the processing chamber 140 .

When viewed from above, the batch type liquid processing chamber 140 may be disposed side by side with the first transfer chamber 130 . For example, the batch type liquid processing chamber 140 is viewed from the top.

The batch type liquid processing chamber 140 may perform liquid processing on a plurality of substrates W at once. In the batch type liquid processing chamber 140 , a plurality of substrates w may be cleaned at one time using a processing liquid. In the batch-type liquid processing chamber 140 , a plurality of substrates W may be liquid-processed at one time using a processing liquid. The treatment liquid used in the batch liquid treatment chamber 140 may be a chemical and/or a rinse liquid. For example, the chemical may be a chemical having strong acid or strong base properties. Also, the rinse liquid may be pure water. For example, chemicals include APM (Ammonia-Hydrogen Peroxide Mixture), HPM (Hydrochloricacid-Hydrogen Peroxide Mixture), FPM (Hydrofluoricacid-Hydrogen Peroxide Mixture), DHF (Diluted Hydrofluoric acid), SiN-removing chemicals, chemicals containing phosphoric acid, It can be suitably selected from chemicals containing sulfuric acid. The rinsing liquid may be appropriately selected from pure water or ozonated water.

Also, the batch liquid processing chamber 140 may include a first batch liquid processing chamber 141 , a second batch liquid processing chamber 142 , and a third batch liquid processing chamber 143 . In the first batch type liquid processing chamber 141 and the second batch type liquid processing chamber 142 , the substrate W may be processed using a chemical. Also, in the third batch type liquid processing chamber 143 , the substrate W may be rinsed using a rinse liquid. In addition, after the substrate W is processed in the first batch type liquid processing chamber 141 and/or the second batch type liquid processing chamber 142, the above-described first transfer unit 132 moves the storage container C is transported to the third batch type liquid processing chamber 143, and the substrate W stored in the storage container C may be treated with the rinse liquid. Details of the batch type liquid processing chamber 140 will be described later.

When viewed from above, the second transfer chamber 150 may be arranged side by side with the first transfer chamber 130 and the batch type liquid processing chamber 140 . For example, the second transport chamber 150 may be arranged side by side with the first transport chamber 130 along the second direction (Y). In addition, the second transfer chamber 150 may be arranged side by side with the batch type liquid processing chamber 140 along the first direction (X). Also, the second transfer chamber 150 may be disposed between the third batch type liquid processing chamber 143 and the second process processing unit 200 . For example, the second transfer chamber 150 may be disposed between the third batch type liquid processing chamber 143 and the first buffer unit 210 to be described later.

The second transport chamber 150 may transport the substrate W. The second transport chamber 150 may transport the substrate W from the batch type liquid processing chamber 140 to the first buffer unit 210 to be described later. The second transfer chamber 150 may include a second transfer unit 152 having a transfer hand. The conveying hand of the second conveying unit 152 may be provided to be movable along the first direction (X), the second direction (Y), and the third direction (Z). In addition, the conveying hand of the second conveying unit 152 may be rotatably provided in the third direction (Z). In addition, the transfer hand of the second transfer unit 152 transfers the substrate W from the third batch liquid processing chamber 143 included in the batch liquid processing chamber 140 to the first buffer unit 210. can be returned to In addition, the transfer hand of the second transfer unit 152 may carry the substrate W in a horizontal position from the third sheet-type liquid processing chamber 143 and transfer it to the first buffer unit 210 .

The second processing unit 200 may process the substrate W processed in the first processing unit 100 . The second process unit 200 may process the substrate W processed in the first process unit 100, and perform liquid or dry treatment on the substrate W in a single-wafer method. The second process processing unit 200 includes a first buffer unit 210, a third transfer chamber 220, a sheet type liquid processing chamber 230, a drying chamber 240, a second buffer unit 250, a second An index chamber 260 and a second load port unit 270 may be included. Both the single-wafer liquid processing chamber 230 and the drying chamber 240 may be referred to as single-wafer processing chambers.

When viewed from above, the first buffer unit 210 may be arranged side by side with the above-described second transfer chamber 150 along the first direction X. For example, the first buffer unit 210 may be disposed on one side of the second transfer chamber 150 . The first buffer unit 210 may have a storage space for temporarily storing the liquid-processed substrates W in the first process unit 100 . The first buffer unit 210 may store the substrates W whose posture is changed from a vertical posture to a horizontal posture in a third batch type liquid processing chamber 143 to be described later in a horizontal posture. In addition, in the first buffer unit 210, a wetting liquid is supplied to the storage space to prevent the substrates W brought into the storage space from being dried (to maintain the wettability of the substrates W). A liquid supply line may be connected. In addition, the substrates W stored in the first buffer unit 210 may be stored in storage spaces independently partitioned within the first buffer unit 210 . Also, the first buffer unit 210 may be stacked with at least some of the single-wafer processing chambers. For example, a drying chamber 240 or a single-wafer type liquid processing chamber 230 may be disposed below the first buffer unit 210 . For example, a single wafer type liquid processing chamber 230 to be described below may be disposed below the first buffer unit 210 . The number of single wafer type liquid processing chambers 230 disposed below the first buffer unit 210 may be one or a plurality.

When viewed from above, the third transfer chamber 220 may be disposed between drying chambers 240 to be described later. In addition, when viewed from above, the third transfer chamber 220 may be disposed between the single-wafer type liquid processing chamber 230 and the first buffer unit 210, which will be described later. The third transfer chamber 220 may include a third transfer unit 222 . The third transfer unit 222 may include a transfer hand that transfers the substrate W from the first buffer unit 210 to the drying chamber 240 or the sheet type liquid processing chamber 230 . The hand of the third transport unit 220 may be a sheet hand that transports the substrates W one by one. The transfer hand of the third transfer unit 222 may be provided to be movable along the first direction (X), the second direction (Y), and the third direction (Z). In addition, the conveying hand of the third conveying unit 222 may be rotatably provided in the third direction Z as a rotational axis.

When viewed from above, the single-wafer type liquid processing chamber 230 may be disposed on one side and the other side of the third transfer chamber 220 . Some of the single-wafer type liquid processing chambers 230 may be stacked with the first buffer unit 210 as described above. Some of the single-wafer type liquid processing chambers 230 may be disposed below the first buffer unit 210 .

The single wafer type liquid processing chamber 230 may process the substrate W by supplying a processing liquid to the rotated substrate W while rotating the substrate W in a horizontal position. In the single wafer type liquid processing chamber 230 , the substrates W may be processed one by one. The treatment liquid supplied from the single wafer type liquid treatment chamber 230 may be an organic solvent. For example, the treatment liquid supplied from the single-wafer liquid treatment chamber 230 may be isopropyl alcohol (IPA). In the single wafer type liquid processing chamber 230 , an organic solvent may be supplied to the rotating substrate W, and the substrate W may be dried by rotating the substrate W. Unlike this, in the single-wafer type liquid processing chamber 9230, the organic solvent is supplied to the rotating substrate W, and the substrate W is transferred to the drying chamber 240 to be described later in a wet state with the organic solvent, and the drying chamber 240 ), the substrate W may be dried. A detailed description of the single-wafer type liquid processing chamber 230 will be described later.

In the drying chamber 240 , the substrate W may be processed using a supercritical fluid. The drying chamber 240 may be a supercritical chamber for drying a single substrate W in a single wafer type. The drying chamber 240 may be a supercritical chamber for drying the substrate W using a supercritical fluid. A detailed description of the drying chamber 240 will be described later.

The second buffer unit 250 may be disposed between the third transfer chamber 230 and the second index chamber 260 to be described later. The second buffer unit 250 may be disposed between the single wafer processing chamber and the second load port unit 270 .

Similar to the first buffer unit 210, the first buffer unit 250 may provide a space in which the substrate W is temporarily stored or stored. For example, the second buffer unit 250 may temporarily store the substrate W processed in the single-wafer liquid processing chamber 230 and/or the drying chamber 240 , which are single-wafer processing chambers.

The second index chamber 260 may be arranged in parallel with the second buffer unit 250 and the third transfer chamber 220 . The second index chamber 260 may be arranged side by side with the second buffer unit 250 and the third transfer chamber 220 along the second direction (Y). The third transfer unit 222 of the third transfer chamber 220 described above carries out the substrate W in a horizontal position processed in the single-wafer type liquid processing chamber 230 or the drying chamber 240, and carries out the substrate ( W) may be transferred to the second buffer unit 250. The second transport robot 262 of the second index chamber 260 may transport the substrate W from the second buffer unit 250 .

The hand of the second transfer robot 262 may be a sheet hand that transfers the substrates W one by one. The transfer hand of the second transfer robot 262 may be provided to be movable along the first direction (X), the second direction (Y), and the third direction (Z). In addition, the transfer hand of the second transfer robot 262 may be rotatably provided in the third direction Z as a rotation axis.

The second load port unit 270 may include one or more load ports. A container F capable of accommodating a plurality of substrates W may be placed in the load port of the second load port unit 270 . For example, the container F placed in the second load port unit 270 may contain substrates W processed by the first processing unit 100 and the second processing unit 200 . The container F placed in the second load port unit 270 may contain only the substrates W processed by the first processing unit 100 and the second processing unit 200 . That is, the second load port unit 270 may perform a function of unloading the processed substrate W from the substrate processing apparatus.

The above-described second transfer robot 262 may carry the processed substrate W into the container F placed in the load port of the second load port unit 270 . The container F may be transported out of the substrate processing apparatus 10 by the above-described product transport device (eg, OHT).

The controller 600 may control the substrate processing apparatus 10 . For example, the controller 600 may control components of the substrate processing apparatus 10 . For example, the controller 600 may control the substrate processing apparatus 10 so that the substrate processing apparatus 10 may perform a process of processing the substrate W. For example, the controller 600 controls the batch liquid processing chamber 140, the second transfer unit 152, the first buffer unit 210, the third transfer unit 222, and the second transfer robot 262. can do. Also, the controller 600 may control a liquid supply source 315, a liquid discharge line 316, a position changing member 330, an elevating member 340, and a heating member 320, which will be described later.

In addition, the controller 600 includes a process controller composed of a microprocessor (computer) that controls the substrate processing apparatus 10, a keyboard through which an operator inputs commands to manage the substrate processing apparatus 10, and the like; A user interface consisting of a display or the like that visualizes and displays the operation status of the substrate processing apparatus 10, a control program for executing processes executed in the substrate processing apparatus 10 under the control of a process controller, and various data and processing conditions According to this, a program for executing processing in each component unit, that is, a storage unit in which a processing recipe is stored may be provided. Also, the user interface and storage may be connected to the process controller. The processing recipe may be stored in a storage medium of the storage unit, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or a DVD, or a semiconductor memory such as a flash memory.

FIG. 4 is a schematic view of the batch type liquid processing chamber and the first transfer chamber of FIG. 1 viewed from the side.

Referring to FIG. 4 , the batch type liquid processing chamber 140 includes a first batch type liquid processing chamber 141, a second batch type liquid processing chamber 142, and a third batch type liquid processing chamber ( 143) may be included. The first batch type liquid processing chamber 141 , the second batch type liquid processing chamber 142 , and the third batch type liquid processing chamber 143 may be arranged side by side along the first direction X.

The first batch type liquid processing chamber 141 and the second batch type liquid processing chamber 142 may have the same or similar structures. For example, the first batch type liquid processing chamber 141 and the second batch type liquid processing chamber 142 may have the same or similar structures except for the type of processing liquid used. For example, in the first batch type liquid processing chamber 141 , the substrate W may be processed using the first processing liquid L1 . For example, in the second batch type liquid processing chamber 142 , the substrate W may be processed using the second processing liquid L2 . The first treatment liquid L1 may be any one of the above-mentioned chemicals. The second treatment liquid L2 may be another one of the above-mentioned chemicals.

The first batch type liquid processing chamber 141 includes a first treatment tank 141a, a first liquid supply line 141b, a first liquid discharge line 141c, a first heating member 141d, and a first liquid supply. It may include a circle 141e. The second batch type liquid processing chamber 142 includes a second treatment tank 142a, a second liquid supply line 142b, a second liquid discharge line 142c, a second heating member 142d, and a second liquid supply. may include a circle 142e. The first liquid supply line 141b, the first liquid discharge line 141c, the first heating member 141d, and the first liquid supply source 141e are connected to the second treatment tank 142a, the second liquid supply line ( 142b), the second liquid discharge line 142c, the second heating member 142d, and the second liquid supply source 142e may have substantially the same or similar structures and functions. Therefore, hereinafter, the first batch type liquid processing chamber 141 will be mainly described.

The first treatment tank 141a may have an accommodation space in which the first treatment liquid L1 is accommodated. The first treatment bath 141a may have a cylindrical shape with an open top. A heating member 141d for adjusting the temperature of the first treatment liquid L1 accommodated in the accommodation space may be provided in the first treatment bath 141a. In addition, the first liquid supply line 141b connected to the first liquid supply source 141e may supply the first treatment liquid L1 to the receiving space of the first treatment tank 141a, and the first liquid discharge line ( 142c) may discharge the first treatment liquid L1 supplied to the accommodation space to the outside. In addition, the storage container F may have a tubular shape with one side open, and may have a storage space therein. In addition, the storage container F may be immersed in the first treatment liquid L1 supplied to the accommodation space of the first treatment bath 141a while the plurality of substrates W are stored therein. In addition, at least one through hole is formed in the storage container C, so that the substrates W stored in the storage container C can be immersed in the first treatment liquid L1. The substrates W processed by the first treatment liquid L1 are sequentially transferred to the second batch type liquid processing chamber 142 and the third batch type liquid processing chamber 143 by the first transfer unit 132. It can be transported and sequentially processed by the second treatment liquid L2 and the third treatment liquid L3. The third treatment liquid L3 may be the aforementioned rinsing liquid.

FIG. 5 is a perspective view showing a substrate processing apparatus provided in the third batch type liquid processing chamber of FIG. 4 , and FIG. 6 is a cross-sectional view showing a substrate processing apparatus provided in the third batch type liquid processing chamber of FIG. 4 . 5 and 6 , the substrate processing apparatus 300 provided in the third batch type liquid processing chamber 143 includes a treatment bath 310, a liquid supply line 314, a liquid supply source 315, A liquid discharge line 316 , a heating member 320 , a position changing member 330 , and an elevating member 340 may be included.

The treatment bath 310 may have an accommodation space 312 in which the third treatment liquid L3 is accommodated. The treatment bath 310 may have a tubular shape with an open top. The treatment bath 310 may include a bottom portion and a side portion extending upward from an edge area of the bottom portion when viewed from above.

Also, the liquid supply source 315 may supply the treatment liquid to the accommodation space 312 . The liquid supply source 315 may supply the third treatment liquid L3 to the accommodation space 312 . The liquid supply source 315 may supply the rinsing liquid to the accommodating space 312 . The liquid supply source 315 may be connected to the liquid supply line 314 . One end of the liquid supply line 314 may be connected to the accommodation space 312 and the other end of the liquid supply line 314 may be connected to the liquid supply source 315 . The liquid supply source 315 may supply the rinsing liquid to the liquid supply line 314 , and the liquid supply line 314 may supply the rinsing liquid to the accommodation space 312 . Also, the third treatment liquid L3 used in the accommodating space 312 may be discharged to the outside through the liquid discharge line 316 .

The heating member 320 may adjust the temperature of the third treatment liquid L3 supplied to the accommodating space 312 . For example, the heating member 320 may heat the third treatment liquid L3 supplied to the accommodating space 312 to a set temperature. The heating member 320 may be provided on the bottom and side portions of the treatment bath 310 . For example, a heating element 320 may be provided within the treatment bath 310 . The heating member 320 may generate cold or warm heat to adjust the temperature of the third treatment liquid L3 supplied to the accommodation space 312 . The heating member 320 may be a heater. However, the heating member 320 is not limited thereto, and the heating member 320 may be variously modified as a known device capable of adjusting the temperature of the third treatment liquid L3 supplied to the accommodating space 312 .

The attitude changing member 330 may rotate the storage container C submerged in the third treatment liquid L3. The position changing member 330 rotates the storage container C submerged in the third treatment liquid L3 to change the positions of the substrates W stored in the storage container C from a vertical position to a horizontal position. can The posture changing member 330 may include a moving part 332 and a rotating part 334 .

The moving unit 332 may be installed in the treatment bath 310 . The moving unit 332 may be configured to be movable along the first direction (X). The moving unit 332 may be installed on the side of the treatment bath 310 . For example, the movable unit 332 may have a 'c' shape with an open portion facing downward so as to be installed across the side of the treatment bath 310 . As described above, the moving unit 332 is configured to be movable along the first direction X, and moves the storage container mounted on the rotating unit 334 to be described later along the first direction X, which is a horizontal direction. can

The rotating part 334 may be installed on the moving part 332 . The rotating part 334 may be provided to be mounted in a mounting groove (not shown) formed in the storage container (C). The rotation unit 334 is provided to be mountable to the storage container C, and can rotate the storage container C. For example, the rotation unit 334 has an axial shape, and its rotation axis may be parallel to the second direction Y. In addition, the rotating unit 334 may hold the storage container C while the storage container C is locked in the accommodation space 312 .

The elevating member 340 may move the storage container C in the vertical direction. The elevating member 340 may move the storage container C rotated by the position changing member 330 in the vertical direction. The elevating member 340 may be detachably provided to the storage container C. The elevating member 340 may include a shaft 342 and an actuator 344 . The shaft 342 may be moved in a vertical direction by a driving force generated by the driver 344 . Actuator 344 may be a pneumatic, hydraulic cylinder or motor. However, the actuator 344 is not limited thereto and may be variously modified as a known device capable of moving the shaft 342 in the vertical direction.

Also, when viewed from above, the shaft 342 is provided at the bottom of the treatment bath 310 and may be disposed in an area adjacent to the first buffer unit 210 described above. The shaft 342 may have an axial shape. The shaft 342 may serve as a guide shaft for guiding the position of the storage container C rotated by the posture changing member 330 . For example, the shaft 342 may be inserted into an alignment groove CG formed on the bottom surface of the storage container C rotated by the posture changing member 330 to guide the position of the storage container C. In addition, the elevating member 340 mentioned in the above example may also be called a guide member or the like.

Hereinafter, a substrate processing method according to an embodiment of the present invention will be described with reference to FIGS. 7 to 13 . The controller 600 may control the substrate processing apparatus 10 to perform a substrate processing method described below.

Referring to FIG. 7 , a storage container C containing a plurality of substrates W, for example, 25 to 50 substrates W, is immersed in the third treatment liquid L3 supplied to the accommodation space 312. It can be. For example, the storage container C is submerged in the third treatment liquid L3, and the third treatment liquid L3 flows into the storage space of the storage container C to process the substrates W. At this time, the substrates (W) stored in the storage container (C) can maintain a vertical posture. In addition, while the substrates W are being processed by the third treatment liquid L3, the rotating part of the posture changing member 330 may hold the storage container C.

Referring to FIG. 8 , when the processing of the substrates W is completed by the third treatment liquid L3, the rotation unit 334 of the posture changing member 330 may rotate the storage container C. The rotating unit 334 of the posture changing member 330 may rotate the storage container C around the axis of rotation parallel to the second direction Y. When the storage container C is rotated, the postures of the plurality of substrates W stored in the storage container C may be changed from a vertical position to a horizontal position. At this time, the rotating unit 334 may rotate the storage container C in a state in which the storage container C is submerged in the third treatment liquid L3 supplied to the accommodation space 312 . This is because when the storage container C is rotated while being exposed to the outside (eg, exposed to air), the substrates W stored in the storage container C may be dried.

Referring to FIG. 9 , the container C rotated by the rotation unit 334 may be moved along the first direction X while being mounted on the rotation unit 334 . For example, the storage container C may be moved to the top of the above-described lifting member 340 . Also, the movement of the storage container C in the horizontal direction may be performed while being immersed in the third treatment liquid L3 supplied to the accommodation space 312 . This is because when the storage container C is moved while being exposed to the outside (eg, exposed to air), the substrates W stored in the storage container C may be dried.

Referring to FIG. 10 , the shaft 342 of the elevating member 340 may be moved upward and inserted into the alignment groove CG formed in the storage container C. When inserted into the alignment groove CG, the rotating part 334 moves along the second direction Y and can be separated from the storage container C. Thereafter, the shaft 342 may move the storage container C upward to expose some of the substrates W stored in the storage container C to the outside (eg, exposed to air). For example, the shaft 342 moves the storage container C upward to expose only the uppermost substrate W among the substrates W stored in the storage container C to the outside (eg, air during exposure). This prevents the remaining substrates (W) from drying, that is, maintains wettability, except for the substrate (W) disposed at the top, which is subsequently carried out from the storage container (C) by the third transfer unit 152 is to do

Referring to FIG. 11 , the substrate W disposed on the top of the storage container C may be taken out of the storage container C by the third transport unit 153 and transported to the first buffer unit 210. there is. At this time, as described above, the first buffer unit 210 may include a nozzle for supplying a chemical liquid or mist capable of maintaining the wettability of the substrate W transported to the storage space of the first buffer unit 210. there is. The chemical liquid or mist may include a treatment liquid selected from isopropyl alcohol (IPA), the above-mentioned chemical, and the above-mentioned rinse liquid.

Referring to FIG. 12 , as described above, after the uppermost substrate W is taken out to the storage container C, the shaft 342 of the elevating member 340 moves upward once more to the storage container ( C) can be moved. Thus, among the substrates W stored in the storage container C, only the uppermost substrate W may be exposed to the outside (eg, exposed to air). This prevents the remaining substrates (W) from drying, that is, maintains wettability, except for the substrate (W) disposed at the top, which is subsequently carried out from the storage container (C) by the third transfer unit 152 is to do

Referring to FIG. 13 , the substrate W placed on the top of the storage container C may be taken out of the storage container C by the third transport unit 153 and transported to the first buffer unit 210. there is.

FIG. 14 is a view showing a substrate processing apparatus provided in the single wafer type liquid processing chamber of FIG. 1 . The substrate processing apparatus 400 provided in the single wafer type liquid processing chamber 230 includes a housing 410, a processing container 420, a support unit 440, an elevating unit 460, and a liquid supply unit 480. can do.

The housing 410 has a processing space 412 therein. The housing 410 may have a tubular shape having a space therein. A processing container 420 , a support unit 440 , an elevating unit 460 , and a liquid supply unit 480 may be provided in the inner space 412 of the housing 410 . The housing 410 may have a square shape when viewed from a front end surface. However, it is not limited thereto and the housing 410 can be deformed into various shapes that can have the processing space 412 therein.

The processing vessel 420 has a cylindrical shape with an open top. The processing container 420 has an internal recovery container 422 and an external recovery container 426 . Each of the collection containers 422 and 426 recovers different treatment solutions among the treatment solutions used in the process. The internal collection container 422 is provided in an annular ring shape surrounding the substrate support unit 440 , and the external collection container 426 is provided in an annular ring shape surrounding the internal collection container 426 . The inner space 422a of the internal recovery container 422 and the internal recovery container 422 function as a first inlet 422a through which the treatment liquid flows into the internal recovery container 422 . The space 426a between the internal recovery container 422 and the external recovery container 426 functions as a second inlet 426a through which the treatment liquid flows into the external recovery container 426 . According to one example, the respective inlets 422a and 426a may be located at different heights. The recovery lines 422b and 426b are connected below the bottom surface of each of the recovery cylinders 422 and 426 . The treatment liquids flowing into the respective recovery containers 422 and 426 may be supplied to an external treatment liquid regeneration system (not shown) through the recovery lines 422b and 426b and reused.

The support unit 440 supports the substrate W in the processing space 412 . The support unit 440 supports and rotates the substrate W during the process. The support unit 440 includes a support plate 442 , a support pin 444 , a chuck pin 446 , and rotation driving members 448 and 449 .

The support plate 442 is provided in a substantially circular plate shape and has an upper surface and a lower surface. The lower surface has a smaller diameter than the upper surface. That is, the support plate 442 may have an upper and lower narrow shape with a wide upper surface and a narrow lower surface. The upper and lower surfaces are positioned such that their central axes coincide with each other. In addition, a heating means (not shown) may be provided on the support plate 442 . The heating unit provided on the support plate 442 may heat the substrate W placed on the support plate 442 . The heating means may generate heat. The heat generated by the heating means may be hot or cold. Heat generated by the heating unit may be transferred to the substrate W placed on the support plate 442 . In addition, the heat transferred to the substrate W may heat the treatment liquid supplied to the substrate W. The heating means may be a heater and/or a cooling coil. However, it is not limited thereto, and the heating means may be variously modified as a known device.

A plurality of support pins 444 are provided. The support pins 444 are spaced apart from each other at predetermined intervals on the edge of the upper surface of the support plate 442 and protrude upward from the support plate 442 . Support pins 444 are arranged to have an annular ring shape as a whole by combining with each other. The support pin 444 supports the rear edge of the substrate W such that the substrate W is separated from the upper surface of the support plate 442 by a predetermined distance.

A plurality of chuck pins 446 are provided. The chuck pin 446 is disposed farther from the center of the support plate 442 than the support pin 444 . The chuck pin 446 is provided to protrude upward from the upper surface of the support plate 442 . When the support plate 442 is rotated, the chuck pin 446 supports the side of the substrate W so that the substrate W does not deviate from the original position in the lateral direction. The chuck pin 446 is provided to enable linear movement between an outer position and an inner position along the radial direction of the support plate 442 . The outer position is a position farther from the center of the support plate 442 than the inner position. When the substrate W is loaded or unloaded from the support plate 442, the chuck pin 446 is positioned at an outer position, and when a process is performed on the substrate W, the chuck pin 446 is positioned at an inner position. The inner position is a position where the side surfaces of the chuck pin 446 and the substrate W are in contact with each other, and the outer position is a position where the chuck pin 446 and the substrate W are spaced apart from each other.

The rotation drive members 448 and 449 rotate the support plate 442 . The support plate 442 is rotatable around its own central axis by the rotation driving members 448 and 449 . The rotation driving members 448 and 449 include a support shaft 448 and a driving unit 449 . The support shaft 448 has a cylindrical shape facing the fourth direction 16 . The upper end of the support shaft 448 is fixedly coupled to the lower surface of the support plate 442 . According to one example, the support shaft 448 may be fixedly coupled to the center of the bottom surface of the support plate 442 . The driving unit 449 provides a driving force so that the support shaft 448 rotates. The support shaft 448 is rotated by the drive unit 449 , and the support plate 442 is rotatable together with the support shaft 448 .

The lifting unit 460 linearly moves the processing container 420 in the vertical direction. As the processing container 420 moves up and down, the relative height of the processing container 420 with respect to the support plate 442 is changed. The lifting unit 460 lowers the processing container 420 so that the supporting plate 442 protrudes upward from the processing container 420 when the substrate W is loaded onto or unloaded from the supporting plate 442 . In addition, when the process is in progress, the height of the processing container 420 is adjusted so that the processing liquid can be introduced into the predetermined collection containers 422 and 426 according to the type of the processing liquid supplied to the substrate W. The lifting unit 460 has a bracket 462, a moving shaft 464, and an actuator 466. The bracket 462 is fixedly installed on an outer wall of the processing container 420, and a moving shaft 464 moved in a vertical direction by a driver 466 is fixedly coupled to the bracket 462. Optionally, the lifting unit 460 may move the support plate 442 in a vertical direction.

The liquid supply unit 480 may supply the treatment liquid to the substrate (W). The treatment liquid may be an organic solvent, the aforementioned chemical, or a rinse liquid. The organic solvent may be isopropyl alcohol (IPA) liquid.

The liquid supply unit 480 may include a moving member 481 and a nozzle 489 . The moving member 481 moves the nozzle 489 to a process position and a stand-by position. The process position is a position where the nozzle 489 faces the substrate W supported by the support unit 440 . According to an example, the process position is a position where the treatment liquid is discharged to the upper surface of the substrate (W). The processing location also includes a first feeding location and a second feeding location. The first supply position may be a position closer to the center of the substrate W than the second supply position, and the second supply position may be a position including an end of the substrate. Optionally, the second supply location may be an area adjacent to the end of the substrate. The standby position is defined as a position where the nozzle 489 is out of the process position. According to an example, the standby position may be a position where the nozzle 489 stands by before processing the substrate W or after processing is completed.

The moving member 481 includes an arm 482 , a support shaft 484 , and an actuator 484 . The support shaft 484 is located on one side of the processing vessel 420 . The support shaft 484 has a rod shape with its longitudinal direction directed in the fourth direction. The support shaft 484 is rotatably provided by the driver 484 . The support shaft 484 is provided to be able to move up and down. The arm 482 is coupled to the upper end of the support shaft 484. Arm 482 extends perpendicularly from support shaft 484 . A nozzle 489 is coupled to the end of the arm 482 . As the support shaft 484 rotates, the nozzle 489 may swing along with the arm 482 . The nozzle 489 can be swing-moved to a process position and a stand-by position. Optionally, arm 482 may be provided for forward and backward movement in its longitudinal direction. When viewed from above, the path along which the nozzle 489 is moved may coincide with the central axis of the substrate W at the process position.

FIG. 15 is a view showing a substrate processing apparatus provided in the drying chamber of FIG. 1 . Referring to FIG. 15 , the drying chamber 500 may remove the treatment liquid remaining on the substrate W by using the drying fluid G in a supercritical state. The drying chamber 500 may be a supercritical chamber that removes a treatment liquid (eg, a rinsing liquid or an organic solvent) remaining on the substrate W using a supercritical fluid. For example, the drying chamber 500 may perform a drying process of removing the organic solvent remaining on the substrate W using carbon dioxide (CO2) in a supercritical state.

The drying chamber 500 may include a body 510 , a heating member 520 , a fluid supply unit 530 , a fluid exhaust unit 550 , and an elevating member 560 . The body 510 may have an inner space 518 in which the substrate W is processed. The body 510 may provide an inner space 518 in which the substrate W is processed. The body 510 may provide an inner space 518 in which the substrate W is dried by the drying fluid G in a supercritical state.

The body 510 may include an upper body 512 and a lower body 514 . The upper body 512 and the lower body 514 may be combined with each other to form the inner space 518 . The substrate W may be supported in the inner space 518 . For example, the substrate W may be supported by a support member (not shown) in the inner space 518 . The support member may be configured to support the lower surface of the edge region of the substrate (W). Any one of the upper body 512 and the lower body 514 may be coupled to the elevating member 560 and move in a vertical direction. For example, the lower body 514 may be coupled to the elevating member 560 and moved vertically by the elevating member 560 . Accordingly, the inner space 518 of the body 510 may be selectively sealed. In the above example, the lower body 514 is coupled to the elevating member 560 and moved in the vertical direction as an example, but is not limited thereto. For example, the upper body 512 may be coupled with the elevating member 560 to move vertically.

The heating member 520 may heat the drying fluid G supplied to the inner space 518 . The heating member 520 may increase the temperature of the inner space 518 of the body 510 to change the phase of the drying fluid G supplied to the inner space 518 to a supercritical state. In addition, the heating member 520 may raise the temperature of the inner space 518 of the body 510 so that the supercritical drying fluid G supplied to the inner space 518 maintains the supercritical state. .

Also, the heating member 520 may be embedded in the body 510 . For example, the heating member 520 may be embedded in any one of the upper body 512 and the lower body 514 . For example, a heating element 520 may be provided within the lower body 514 . However, it is not limited thereto, and the heating member 520 may be provided in various positions capable of increasing the temperature of the inner space 518 . Also, the heating member 520 may be a heater. However, it is not limited thereto, and the heating member 520 may be variously modified as a known device capable of raising the temperature of the inner space 518 .

The fluid supply unit 530 may supply drying fluid G to the inner space 518 of the body 510 . The drying fluid G supplied by the fluid supply unit 530 may include carbon dioxide (CO2). The fluid supply unit 530 may include a fluid supply source 531, a first supply line 533, a first supply valve 535, a second supply line 537, and a second supply valve 539. .

The fluid supply source 531 may store and/or supply the drying fluid G supplied to the inner space 518 of the body 510 . The fluid supply source 531 may supply the drying fluid G through the first supply line 533 and/or the second supply line 537 . For example, a first supply valve 535 may be installed in the first supply line 533 . In addition, a second supply valve 539 may be installed in the second supply line 537 . The first supply valve 535 and the second supply valve 539 may be on/off valves. The drying fluid G may selectively flow through the first supply line 533 or the second supply line 537 according to the on/off of the first supply valve 535 and the second supply valve 539. .

In the above example, the first supply line 533 and the second supply line 537 are connected to one fluid supply source 531, but it has been described as an example, but is not limited thereto. For example, a plurality of fluid supply sources 531 are provided, a first supply line 533 is connected to any one of the plurality of fluid supply sources 531, and a second supply line 537 is one of the fluid supply sources 531. It can also be linked to another one.

Also, the first supply line 533 may be an upper supply line supplying drying gas from the upper part of the inner space 518 of the body 510 . For example, the first supply line 533 may supply drying gas to the inner space 518 of the body 510 in a direction from top to bottom. For example, the first supply line 533 may be connected to the upper body 512 . Also, the second supply line 537 may be a lower supply line supplying drying gas from the lower part of the inner space 518 of the body 510 . For example, the second supply line 537 may supply drying gas to the inner space 518 of the body 510 in a direction from bottom to top. For example, the second supply line 537 may be connected to the lower body 514 .

The fluid exhaust unit 550 may exhaust the drying fluid G from the inner space 518 of the body 510 .

As described above, the substrate processing apparatus 10 according to an embodiment of the present invention may include both the batch type liquid processing chamber 140 and the single wafer type liquid processing chamber 230 . Thus, it is possible to have both the advantages of the batch type liquid processing method and the single wafer type liquid processing chamber.

For example, in the batch type liquid processing chamber 140, a plurality of substrates (W) can be processed at one time, so that the mass productivity of processing the substrates (W) is very excellent and the processing uniformity between the substrates (W) is very high. In addition, when the pattern formed on the substrate W has a high aspect ratio, the batch-type liquid processing chamber 140 that has not yet been processed (eg, the portion that has not yet been etched) is treated with chemicals in the single-wafer type liquid processing chamber 230, It can be supplemented by supplying a rinse liquid or the like. In addition, a drying chamber in which a substrate (W, for example, a wafer) wetted by the organic solvent supplied from the single-wafer type liquid processing chamber 230 or the first buffer unit 210 is supplied with supercritical fluid to dry the substrate (W). It can be returned to (240). The supercritical fluid has high penetrating power into the space between the patterns formed on the substrate (W), and can dry the substrate (W) without rotating the substrate (W), thereby minimizing the above-described pattern thinning phenomenon. can do. In addition, the substrate processing apparatus 10 of the present invention can perform all of the single-wafer type liquid processing method, the batch type liquid processing method, and the method of drying the substrate W using a supercritical fluid, so that particles, Defects caused by drop and flow can be improved. In addition, since the number of substrates W that can be processed in the batch type liquid processing chamber 140 is relatively large, a large number of liquid processing chambers are not required, thereby reducing the footprint of the substrate processing apparatus 10. There are advantages that can be In addition, as described above, by further including the single-wafer type liquid processing chamber 230, SiO 2 is added to the pattern on the substrate W that may be generated when processing the substrate W using only the batch type liquid processing chamber 140. It can solve the problem of abnormal growth.

In addition, as in the substrate processing apparatus 10 according to an embodiment of the present invention, when both the batch type liquid processing chamber 140 and the single wafer type liquid processing chamber 230 are provided, the posture of the substrate W is vertical It is essential to change from posture to horizontal position. Accordingly, the substrate processing apparatus 10 according to an embodiment of the present invention includes the posture changing member 330 to convert the posture of the substrate W from a vertical posture to a horizontal posture. At this time, in order to maintain the wettability of the substrate (W) as much as possible (otherwise, the substrate (W) may be dried and a watermark may occur), the substrate (W) is changed in the position of the substrate (W) in the treatment liquid (L). ) is made in the immersed state. In addition, when the substrates W are taken out of the batch liquid processing chamber 140 and transported to the first buffer unit 210, the remaining substrates W, except for the substrate W to be transported, are transferred to the treatment liquid L. By maintaining the immersed state, it is possible to minimize the occurrence of water marks due to drying of the substrate W.

In the above-described example, when the substrate W is transported between the batch type liquid processing chambers 140, the storage container C is transported by the first transport unit 132, but is limited thereto. It is not. For example, the first transfer unit 132 grips the plurality of substrates W in a vertical position at once instead of the storage container C to transport the plurality of substrates W between the batch type liquid processing chambers 140. can

In the above example, the substrate W is taken out one by one from the third batch type liquid processing chamber 143 and transported to the first buffer unit 210, but is not limited thereto. For example, the second transfer unit 152 may grip the plurality of substrates W at once and transport the plurality of substrates W from the storage container C at once. Also, the second transfer unit 152 may transfer the plurality of substrates W to the first buffer unit 210 at one time. At this time, the first buffer unit 210 may supply chemical solution or mist to the storage space of the first buffer unit 210 as described above to maintain wettability of the loaded substrates W.

In the above example, the substrate processing apparatus 10 according to an embodiment of the present invention has been described as having both the single wafer type liquid processing chamber 230 and the drying chamber 240 as an example, but is not limited thereto. . For example, the substrate processing apparatus 10 may include only one of the single wafer type liquid processing chamber 230 and the drying chamber 240 .

In the above-described example, the substrate W taken out of the batch type liquid processing chamber 140 is transported to the single-wafer type liquid processing chamber 230, and after the substrate W is processed in the single-wafer type liquid processing chamber 230, , The transfer of the substrate W to the drying chamber 240 has been described as an example, but is not limited thereto. For example, if the particle level is good, the substrate W may be directly transferred to the drying chamber 240 in the batch type liquid processing chamber 140 .

In the above-described example, when the substrate W is transported between the batch type liquid processing chambers 140 of the first process unit 100, the storage container C is transported by the first transport unit 132. Although described as an example, it is not limited thereto. For example, as shown in FIG. 16 , the first transport unit 132 may have a placement hand that transports a plurality of substrates (eg, 25 substrates) at a time, and the first transport unit 132 may be stored. Only the plurality of substrates W, not the container C, may be transferred between the batch type liquid processing chambers 140 . In addition, when the first transfer unit 132 has a placement hand, a storage container C is disposed in each of the batch type liquid processing chambers 140, or a support member supporting a plurality of substrates W. may be installed.

The above detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and describe preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed in this specification, within the scope equivalent to the written disclosure and / or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in the specific application field and use of the present invention are also possible. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to cover other embodiments as well.

Courage: F
Storage container: C
Substrate: W
Substrate processing unit: 10
1st process processing unit: 100
1st load port unit: 110
First index chamber: 120
1st transfer robot: 122
Posture change units: 124
First transfer chamber: 130
1st transfer unit: 132
Batch type liquid treatment chamber: 140
First batch liquid treatment chamber: 141
1st treatment group: 141a
First liquid supply line: 141b
First liquid discharge line: 141c
1st heating member: 141d
1st solution supply source: 141e
Second batch liquid treatment chamber: 142
Second processing group: 142a
Second liquid supply line: 142b
2nd liquid discharge line: 142c
Second heating member: 142d
2nd fluid supply source: 142e
3rd batch type liquid treatment chamber: 143
Second transfer chamber: 150
2nd transfer unit: 152
2nd process processing unit: 200
1st buffer unit: 210
Third transfer chamber: 220
3rd transfer unit: 222
Single layer liquid handling chamber: 230
Drying Chamber: 240
Second buffer part: 250
2nd index chamber: 260
2nd transfer robot: 262
2nd load port unit: 270
Substrate processing device provided in the third batch type liquid processing chamber: 300
Treatment tank: 310
Capacity: 312
Liquid supply line: 314
Liquid source: 315
Liquid discharge line: 316
Heating element: 320
Posture conversion member: 330
Moving parts: 332
Rotating parts: 334
Elevating member: 340
Shaft: 342
Actuator: 344
Controller: 600

Claims (20)

In the apparatus for processing the substrate,
a first process processing unit that liquid-processes a plurality of substrates in a batch manner; and
And a second process processing unit for treating the substrate processed in the first processing unit and performing liquid or dry treatment on one substrate in a single-wafer type,
The first process processing unit,
a treatment tank having an accommodation space in which a treatment liquid is accommodated;
a storage container submerged in the processing liquid contained in the accommodation space and having a storage space for accommodating substrates;
a position changing member for rotating the storage container in a state submerged in the treatment liquid; and
Further comprising an elevating member for moving the storage container rotated by the posture change member in a vertical direction,
The lifting member,
A substrate processing apparatus detachably provided in the storage container. According to claim 1,
The first process processing unit,
A first load port unit in which a container containing an unprocessed substrate is placed,
The second process processing unit,
A substrate processing apparatus comprising a second load port unit in which a container in which a processed substrate is accommodated is placed. According to claim 2,
The first process processing unit,
A placement hand for conveying a plurality of substrates unloaded from a container placed in the first load port unit;
The second process processing unit,
and a sheet-fed hand for transporting one substrate subjected to liquid processing in the first processing unit. According to claim 2,
The second process processing unit,
a single-wafer processing chamber for liquid-processing and/or dry-processing a substrate in a single-wafer method; and
and a second buffer unit disposed between the single wafer processing chamber and the second load port unit and temporarily storing the substrate processed in the single wafer processing chamber. According to claim 2,
The second process processing unit,
a single-wafer processing chamber for liquid-processing and/or dry-processing a substrate in a single-wafer method; and
and a first buffer unit disposed between the first processing unit and the single-wafer processing chamber and temporarily storing the substrate processed in the first processing unit. delete According to claim 1,
The posture conversion member,
a rotation unit mountable to the storage container and rotating the storage container; and
and a moving unit installed in the processing bath and horizontally moving the storage container mounted on the rotating unit. According to claim 7,
The treatment tank,
It has a cylindrical shape with an open top,
The moving part,
A substrate processing apparatus installed on the side of the processing bath. According to claim 8,
The moving part,
A substrate processing apparatus having a 'c' shape with an open portion facing downward so as to be installed across the side of the processing bath. delete According to claim 1,
The second process processing unit,
Further comprising a first buffer unit for temporarily storing the liquid-processed substrate in the first process unit,
The device,
The substrate processing apparatus further includes a conveying unit conveying the substrate between the storage container and the first buffer unit. According to claim 11,
The device,
further comprising a controller;
The controller,
and controlling the elevating member and the transfer unit so that the elevating member moves the storage container upward to transfer the substrate exposed from the storage container to the first buffer unit. According to claim 12,
The device,
further comprising a controller;
The controller,
The substrate processing apparatus controls the conveying unit to transport a substrate disposed at the top of the substrates stored in the storage container from the storage container to the first buffer unit. According to claim 13,
The controller,
After the uppermost substrate is taken out of the storage container, the lifting member is operated to move the storage container upward so that the uppermost substrate among the substrates stored in the storage container is exposed to the outside. A substrate processing device to control. In the apparatus for processing the substrate,
a batch processing chamber for cleaning a plurality of substrates in a batch mode;
a single-wafer type processing chamber for processing the substrates processed in the batch-type processing chamber and drying one substrate in a single-wafer type; and
a conveying unit for conveying substrates between the batch processing chamber and the single wafer processing chamber;
The batch processing chamber,
a treatment tank having an accommodation space in which a treatment liquid is accommodated;
a position changing member that is immersed in the processing liquid contained in the accommodation space and rotates a storage container having a storage space for accommodating substrates; and
Further comprising an elevating member for moving the storage container rotated by the posture change member in a vertical direction,
The lifting member,
A substrate processing apparatus detachably provided in the storage container. delete According to claim 15,
The posture conversion member,
a rotation unit mountable to the storage container and rotating the storage container; and
and a moving unit installed in the processing bath and horizontally moving the storage container mounted on the rotating unit. delete In the apparatus for processing the substrate,
a first process processing unit that liquid-processes a plurality of substrates in a batch manner; and
Including a second process processing unit for drying and processing one substrate in a sheet type;
The first process processing unit,
a first load port unit into which only unprocessed substrates are loaded;
a batch processing chamber for cleaning a plurality of substrates in a batch mode;
a first transport module having a batch hand for transporting a plurality of substrates from the first load port unit to the batch processing chamber; and
a first buffer unit disposed between the batch processing chamber and the second processing unit and temporarily storing a substrate;
The batch processing chamber,
a treatment tank having an accommodation space in which a treatment liquid is accommodated;
a storage container submerged in the processing liquid contained in the accommodation space and having a storage space for accommodating substrates;
a position changing member for rotating the storage container in a state submerged in the treatment liquid; and
Further comprising an elevating member for moving the storage container rotated by the posture change member in a vertical direction,
The lifting member,
It is detachably provided to the storage container,
The second process processing unit,
a single-wafer type processing chamber for dry-processing one substrate in a single-wafer type;
a second transport module having a single-wafer hand for transporting one substrate from the first buffer unit to the single-wafer processing chamber; and
and a second load port unit for unloading the substrate processed in the single wafer processing chamber.
According to claim 19,
The single-wafer processing chamber,
provided in multiple
At least some of the single-wafer processing chambers,
Arranged to be stacked with the first buffer unit,
Others of the single-wafer processing chambers include:
A substrate processing apparatus, arranged so as to be stacked on top of each other.

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