KR20230090985A - Semiconductor processing system - Google Patents

Abstract

One embodiment, the case surrounding the side of the inner space; an upper cover disposed to cover one side of the inner space and allowing exhaust gas containing semiconductor process by-products to flow into the inner space through an inlet; a heater disposed below the inlet and heating the exhaust gas; An upper plate forming a first plane at the lower side of the heater, an induction pipe for guiding the exhaust gas downward from a part of the upper plate, and a plurality of through holes disposed around the induction pipe at the lower side of the upper plate. an upper collecting unit including an upper partition wall; A lower collecting unit including a lower plate disposed below the induction pipe while forming a second plane parallel to the first plane; and a lower cover disposed to cover the other side of the inner space and discharging the exhaust gas flowing along the induction pipe and the upper partition wall.

Description

Semiconductor processing system {SEMICONDUCTOR PROCESSING SYSTEM}

This embodiment relates to a technology including a reaction by-product generated in a semiconductor manufacturing process.

ALD (Atomic Layer Deposition) process is a process of depositing an ultra-thin film layer on a material layer such as a semiconductor substrate, and the ultra-thin film layer can be continuously manufactured to a thickness as thin as 3 to 5 Å.

Due to the nature of the process, a large amount of reaction by-products including unreacted raw materials may be generated in the ALD process. Reaction byproducts generated in the ALD process are exhausted to the outside through an exhaust system formed on one side of the process chamber.

The exhaust system is connected to the vacuum pump, and in this structure, as reaction by-products including unreacted raw materials are accumulated in the vacuum pump, a phenomenon in which the life of the vacuum pump is rapidly shortened may occur.

Recently, as the size of semiconductor substrates increases and process methods change, reaction by-products increase compared to the past. Accordingly, there is a demand for the development of a device capable of more efficiently collecting reaction byproducts in a semiconductor manufacturing process.

Against this background, an object of the present embodiment is, in one aspect, to provide a technique capable of collecting reaction byproducts in a semiconductor manufacturing process. In another aspect, an object of the present embodiment is to provide a technique capable of efficiently collecting reaction byproducts in an ALD process.

In order to achieve the above object, one embodiment, in one aspect, the case surrounding the side of the inner space; an upper cover disposed to cover one side of the inner space and allowing exhaust gas containing semiconductor process by-products to flow into the inner space through an inlet; a heater disposed below the inlet and heating the exhaust gas; An upper plate forming a first plane at the lower side of the heater, an induction pipe for guiding the exhaust gas downward from a part of the upper plate, and a plurality of through holes disposed around the induction pipe at the lower side of the upper plate. an upper collecting unit including an upper partition wall; A lower collecting unit including a lower plate disposed below the induction pipe while forming a second plane parallel to the first plane; and a lower cover disposed to cover the other side of the inner space and discharging the exhaust gas flowing along the induction pipe and the upper partition wall.

The lower collecting unit may further include a lower partition wall disposed between the upper partition wall and the induction pipe and coupled to an upper surface of the lower plate.

The exhaust gas may flow in a first direction from the inlet, and the inlet, the heater, and the induction pipe may be disposed in a straight line along the first direction.

The heater may include a heating unit that converts electrical energy into thermal energy and a heat conduction plate extending around the heating unit in a plane direction perpendicular to the first direction.

An area occupied by the through hole in the upper barrier rib may increase from a lower side to an upper side.

When viewing the inner space from an upper side, the inlet, the heater, and the induction pipe may be located at the center.

Channels formed by through-holes of the upper partition wall and the lower partition wall may be irregularly arranged.

The upper barrier rib or the lower barrier rib may form more barrier ribs in a direction of a long axis of the first plane.

The lower collecting unit may further include a horizontal bulkhead formed between the first plane and the second plane to form a third plane parallel to the second plane and disposed around the induction pipe and having a plurality of through holes. can

The lower collecting unit may further include a lower cover partition wall disposed between the lower plate and the lower cover, coupled to a lower surface of the lower plate, and having a plurality of through holes.

The lower collecting part is disposed around the outlet through which the exhaust gas is discharged in the space between the lower plate and the lower cover, and prevents the semiconductor process by-products that fall after being collected on the top of the lower plate or the lower cover from entering the outlet. It may further include an outlet partition wall to prevent it.

In another aspect, an embodiment includes a process chamber in which an atomic layer deposition (ALD) process is performed; a collecting device connected to the process chamber through a first exhaust gas pipe and receiving exhaust gas containing semiconductor process by-products from the process chamber; and a vacuum pump that is connected to the collecting device through a second exhaust gas pipe and creates pressure to form a flow of the exhaust gas.

The collecting device includes an upper cover for introducing the exhaust gas into the inner space through an inlet; a heater disposed below the inlet and heating the exhaust gas; An upper plate forming a first plane at the lower side of the heater, an induction pipe for guiding the exhaust gas downward from a part of the upper plate, and a plurality of through holes disposed around the induction pipe at the lower side of the upper plate. an upper collecting unit including an upper partition wall; A lower collecting unit including a lower plate disposed below the induction pipe while forming a second plane parallel to the first plane; and a lower cover disposed to cover the other side of the inner space and discharging the exhaust gas flowing along the induction pipe and the upper partition wall.

The inlet may communicate with the first exhaust gas pipe, and an O-ring structure may be disposed at the inlet to prevent leakage of the exhaust gas.

A passage through which cooling water flows may be formed in the inlet.

The exhaust gas may flow in a first direction from the inlet, and the inlet, the heater, and the induction pipe may be disposed in a straight line along the first direction.

The heater may include a heating unit that converts electrical energy into thermal energy and a heat conduction plate extending around the heating unit in a plane direction perpendicular to the first direction.

The collecting device may further include a case surrounding a side surface of the inner space, and the top plate may be in contact with the case.

The size of each through hole may increase from the lower side to the upper side.

As described above, according to the present embodiment, it is possible to collect reaction by-products in the semiconductor manufacturing process. And, according to this embodiment, it is possible to efficiently collect reaction by-products in the ALD process.

1 is a configuration diagram of a semiconductor processing system according to an embodiment.
2 is a cut perspective view in which a part of the collecting device according to an embodiment is cut so as to be observed.
3 is an exploded perspective view illustrating an exploded internal configuration of a collecting device according to an exemplary embodiment.
4 is a perspective view of an upper collecting unit according to an embodiment.
5 is a cut perspective view of an upper collecting unit according to an embodiment.
6 is a perspective view of a lower collecting unit according to an embodiment.
7 is an exploded cutaway perspective view of a lower collecting unit according to an embodiment.
8 is a view showing a path through which exhaust gas flows inside the collecting device according to an embodiment.
9 is a diagram showing the speed of exhaust gas flowing inside the collecting device according to an embodiment.
10 is a diagram showing an internal temperature distribution in a collecting device according to an embodiment.

Hereinafter, some embodiments of the present invention will be described in detail through exemplary drawings. In adding reference numerals to components of each drawing, it should be noted that the same components have the same numerals as much as possible even if they are displayed on different drawings. In addition, in describing the present invention, if it is determined that a detailed description of a related known configuration or function may obscure the gist of the present invention, the detailed description will be omitted.

Also, terms such as first, second, A, B, (a), and (b) may be used in describing the components of the present invention. These terms are only used to distinguish the component from other components, and the nature, order, or order of the corresponding component is not limited by the term. When an element is described as being “connected,” “coupled to,” or “connected” to another element, that element is directly connected or connectable to the other element, but there is another element between the elements. It will be understood that elements may be “connected”, “coupled” or “connected”.

1 is a configuration diagram of a semiconductor processing system according to an embodiment.

Referring to FIG. 1 , a semiconductor processing system 100 may include a collecting device 110 , a process chamber 130 , and a vacuum pump 140 .

An atomic layer deposition (ALD) process may be performed in the process chamber 130 . The ALD process is a process of depositing an ultra-thin film layer on a material layer such as a semiconductor substrate, and the ultra-thin film layer can be continuously manufactured to a thickness as thin as 3 to 5 Å.

Due to the nature of the process, a large amount of reaction by-products including unreacted raw materials may be generated in the ALD process. Reaction by-products generated in the ALD process may be discharged to the outside through the first exhaust gas pipe 121 connected to one side of the process chamber.

One side of the first exhaust gas pipe 121 may be connected to the process chamber 130 and the other side may be connected to the collecting device 110 . The first exhaust gas pipe 121 may transfer the exhaust gas discharged from the process chamber 130 to the collecting device 110 .

The pressure for forming the flow of the exhaust gas may be formed by the vacuum pump 140 . The vacuum pump 140 may be connected to the collecting device 110 through the second exhaust gas pipe 122. It may be delivered to the process chamber 130 through the first exhaust gas pipe 121 . In addition, reaction byproducts formed in the process chamber 130 may be discharged to the outside by the exhaust pressure.

The collecting device 110 may have one side connected to the first exhaust gas pipe 121 and the other side connected to the second exhaust gas pipe 122 . An inlet may be formed on one side of the collecting device 110 . Also, the inlet may communicate with the first exhaust gas pipe 121 . Exhaust gas moving through the first exhaust gas pipe 121 may flow into the inner space of the collecting device 110 through the inlet. Among the exhaust gases introduced into the inner space of the collecting device 110 , reaction by-products may be collected by collection-related elements disposed in the inner space of the collecting device 110 . In addition, the exhaust gas from which the reaction byproducts are removed may be discharged to the second exhaust gas pipe 122 through an outlet formed on the other side of the collecting device 110 . An outlet is formed on the other side of the collecting device 110, and the outlet communicates with the second exhaust gas pipe 122 and can perform a function of discharging the exhaust gas to the outside of the collecting device 110.

2 is a cut perspective view in which a part of the collecting device according to an embodiment is cut so as to be observed. And, Figure 3 is an exploded perspective view showing the internal configuration of the collecting device according to an embodiment in an exploded manner.

2 and 3, the collecting device 110 includes an upper cover 210, a case 220, a lower cover 230, a heater 240, an upper collecting unit 250 and a lower collecting unit 260. etc. may be included.

Hereinafter, for convenience of description, the direction in which the exhaust gas flows in will be described as the upper side, and the direction in which the exhaust gas flows out will be described as the lower side. However, it should be noted that, depending on the embodiment, the upper and lower sides may be disposed oppositely, and may be disposed left and right.

The inner space of the collecting device 110 may be surrounded by the case 220 on the side, covered by the upper cover 210 on the upper side, and covered by the lower cover 230 on the lower side.

An inlet 211 may be formed in the upper cover 210 . The inlet 211 communicates with the first exhaust gas pipe and allows exhaust gas including semiconductor process by-products to flow into the inner space through the first exhaust gas pipe. The inlet 211 may be located at the center of the upper cover 210 . The central arrangement of the inlets 211 may create an effect of distributing the exhaust gas in a balanced manner to the internal space. The inlet 211 may be formed in a circular shape, but may have other shapes such as a square depending on embodiments.

An O-ring structure (not shown) capable of preventing leakage of exhaust gas may be further disposed at the inlet 211 of the upper cover 210, and to maintain a temperature suitable for collecting semiconductor process by-products. A cooling water flow path (not shown) may be further formed.

A heater 240 may be disposed below the inlet 211 . The heater 240 may heat exhaust gas introduced through the inlet 211 . The heater 240 is disposed on the side of the inlet 211, and through this arrangement, too much semiconductor process byproducts can be prevented from being collected in the inlet 211, and the semiconductor process byproducts can be uniformly collected as a whole.

The heater 240 may include a heating unit 241 that converts electrical energy into thermal energy and a heat conduction plate 242 extending around the heating unit 241 .

Hereinafter, for convenience of description, the direction in which the exhaust gas is introduced is referred to as a first direction. The first direction is a direction extending from the upper side to the lower side.

The heater 240 may be disposed below the inlet 211 in the first direction. Among the heaters 240 , the heating unit 241 may be disposed below the inlet 211 in the first direction. When the inlet 211 is disposed at the center of the upper cover 210, the heating unit 241 may also be disposed at the center in plan view. According to this arrangement, the heating unit 241 can directly heat the introduced exhaust gas, and can block the exhaust gas from passing through in the first direction. In other words, the heating unit 241 may allow the introduced exhaust gas to spread in a plane perpendicular to the first direction.

The heat conduction plate 242 may be formed to extend from the heating unit 241 in a plane direction perpendicular to the first direction, and through this shape, a heating area may be increased, and exhaust gas may flow into a plane perpendicular to the first direction. It can be spread out more evenly in one direction.

Spatially, the exhaust gas introduced through the inlet 211 spreads evenly in the first inner space 221 formed on the upper side of the heater 240, and then flows downward from the edge of the heater 240 again to the heater 240. It can spread to the second inner space 222 formed on the lower side of (240).

The second inner space 222 is a space formed by the heater 240 and the upper collecting part 250 .

The upper collecting unit 250 may include a top plate 251, an induction pipe 252, and upper partition walls 253a, 253b, and 254.

The upper plate 251 may form a first plane below the heater 240 . Also, a second inner space 222 may be formed between the top plate 251 and the heater 240 . The upper plate 251 may form a first plane perpendicular to the first direction, and the first plane may be parallel to a plane formed by the heater 240 .

The upper plate 251 may come into contact with the case 220 , and through this arrangement, it is possible to block exhaust gas from moving downward along the inner surface of the case 220 .

Exhaust gas spreading along the second inner space 222 may be guided downward through the induction pipe 252 at some positions of the top plate 251 .

The induction pipe 252 may be formed in a shape that guides exhaust gas downward at some positions of the top plate 251 . When the induction pipe 252 is formed in the center of the top plate 251, the exhaust gas can flow in a balanced manner in the inner space.

The induction pipe 252 may be formed in a cylindrical shape and may have a shape extending downward from the top plate 251 . Exhaust gas flowing along the second inner space 222 may move downward along the induction pipe 252 .

The inlet 211, the heater 240, and the induction pipe 252 may be arranged to form a straight line along the first direction. According to this arrangement, the exhaust gas introduced from the inlet 211 may flow toward the inner wall of the case 222 along the first inner space 221 while being heated by the heater 240 . Then, the exhaust gas moves downward along the gap formed between the heater 240 and the inner wall of the case 222, and then strikes the top plate 251 again along the second inner space 222 to induce pipe 252 can move in either direction. In addition, the exhaust gas may move downward along the induction pipe 252 while being reheated by the heater 240 . At this time, the temperature formed inside the induction pipe 252 by the heater 240 may also be maintained above a certain level.

The upper collecting unit 250 is disposed around the induction pipe 252 and may include upper partition walls 253a, 253b, and 254 in which a plurality of through holes are formed. Among the exhaust gas moving downward along the induction pipe 252, semiconductor process by-products may be collected while passing through the upper partition walls 253a, 253b, and 254.

The lower collecting part 260 may include a lower plate 261 , lower partition walls 263a , 263b and 264 , a lower cover partition wall 265 and a horizontal partition wall 266 .

The lower plate 261 may be disposed below the induction pipe 252 and form a second plane parallel to the first plane formed by the upper plate 251 . Exhaust gas moving downward along the induction pipe 252 may spread toward the inner wall of the case 220 after colliding with the lower plate 261 .

Semiconductor process by-products among the exhaust gas spreading out can be collected while passing through through-holes formed in the lower partition walls 263a, 263b, and 264, the horizontal partition wall 266, and the upper partition walls 253a, 253b, and 254.

Then, the remaining exhaust gas moves downward along the gap formed between the lower plate 261 and the inner wall of the case 220, and then the third inner part formed between the lower surface of the lower plate 261 and the lower cover 230. It may be discharged to the outlet 231 through the space 223 .

A lower cover partition wall 265 is formed in the third inner space 223 , and semiconductor process by-products from exhaust gas may be additionally collected by the lower cover partition wall 265 .

An outlet 231 may be formed in the center of the lower cover 230 . The discharge port 231 may discharge exhaust gas into the second exhaust gas pipe while communicating with the second exhaust gas pipe.

4 is a perspective view of an upper collection unit according to an embodiment, and FIG. 5 is a cut perspective view of an upper collection unit according to an embodiment.

Referring to FIGS. 4 and 5 , the upper collecting unit 250 may include a top plate 251 , an induction pipe 252 , and upper partition walls 253a , 253b and 254 .

The top plate 251 may form a first plane perpendicular to the first direction.

An induction pipe 252 having a cylindrical shape may be formed at the center of the top plate 251 . Exhaust gas A moving along the upper side of the top plate 251 may move downward along the induction pipe 252 .

The exhaust gas (A) moving downward along the induction pipe 252 may spread sideways while colliding with the lower plate of the lower collecting unit.

Upper partition walls 253a, 253b, and 254 having a plurality of through holes H may be disposed in the direction in which the exhaust gas A spreads.

The upper partition walls 253a, 253b, and 254 may include first upper partition walls 253a and 253b disposed in the direction of the major axis of the first plane and second upper partition walls 254 disposed in the direction of the minor axis of the first plane.

More upper partition walls may be disposed in the direction of the long axis of the first plane. Accordingly, the first upper partition wall may include the 1-1 upper partition wall 253a and the 1-2 upper partition wall 253b.

The size of each through hole H in the upper partition walls 253a, 253b, and 254 may increase from the lower side to the upper side. Accordingly, the exhaust gas moving downward along the induction pipe 252 may spread sideways while moving upward. Part of the exhaust gas A flows through the through hole H even at the lower side of the upper partition walls 253a, 253b, and 254, but the rest may spread while moving upward. The size and arrangement of the through hole H may create an effect of evenly spreading the exhaust gas A throughout.

As another example, the area occupied by the through hole H of the upper barrier ribs 253a, 253b, and 254 may increase from the lower side to the upper side. The area occupied by the through-holes (H) may be determined by the number of through-holes (H) and the size of the through-holes (H). In this example, the number of through-holes (H) increases from the bottom to the top, or The size of (H) can be increased.

6 is a perspective view of a lower collecting unit according to an embodiment, and FIG. 7 is an exploded cutaway perspective view of a lower collecting unit according to an embodiment.

Referring to FIGS. 6 and 7 , the lower collecting unit 260 may include a lower plate 261 , lower partition walls 263a , 263b and 264 , a lower cover partition wall 265 and a horizontal partition wall 266 .

The lower plate 261 may be disposed below the induction pipe and form a second plane parallel to the first plane formed by the upper plate. Exhaust gas moving downward along the induction pipe may spread toward the inner wall of the case after colliding with the lower plate 261 .

Semiconductor process by-products among the exhaust gases spreading out in this way may be collected while passing through the lower partition walls 263a, 263b, and 264, the horizontal partition wall 266, and the through hole H formed in the upper partition wall.

Then, the remaining exhaust gas moves downward along the gap formed between the lower plate 261 and the inner wall of the case, and then passes through the third inner space formed between the lower surface of the lower plate 261 and the lower cover to discharge port 231. ) can be released.

A lower cover partition wall 265 is formed in the third inner space, and semiconductor process by-products from exhaust gas may be additionally collected by the lower cover partition wall 265 .

The lower partition walls 263a, 263b, and 264 may include first lower partition walls 263a and 263b disposed in the direction of the major axis of the first plane and second lower partition walls 264 disposed in the direction of the minor axis of the first plane.

More lower partition walls may be disposed in the direction of the long axis of the first plane. Accordingly, the first lower partition wall may include the 1-1 lower partition wall 263a and the 1-2 lower partition wall 263b.

Looking at the arrangement order of the partition walls, the 1-2 lower partition wall 263b, the 1-1 lower partition wall 263a, the 1-2 upper partition wall, and the 1-1 upper partition wall may be arranged in the order from the inside to the outside. . In this arrangement, the passages formed by the through-holes of the upper partition wall and the lower partition wall may be irregularly arranged. For example, the through-holes of the 1-2 lower partition wall 263b, the 1-1 lower partition wall 263a, the 1-2 upper partition wall, and the 1-1 upper partition wall are not arranged in a straight line but are staggered. It can be, and the degree of staggering can be irregular. Through this arrangement, the residence time of the exhaust gas inside the collecting device can be longer.

The size of each through hole H in the lower partition walls 263a, 263b, and 264 may increase from the lower side to the upper side. Accordingly, the exhaust gas moving downward along the induction pipe may spread sideways while moving upward. Part of the exhaust gas flows through the through hole H even at the lower side of the lower partition walls 263a, 263b, and 264, but the rest may spread while moving upward. The size and arrangement of the through holes H can create an effect of evenly spreading the exhaust gas throughout.

As another example, the area occupied by the through hole H of the lower barrier ribs 263a, 263b, and 264 may increase from the lower side to the upper side. The area occupied by the through-holes (H) may be determined by the number of through-holes (H) and the size of the through-holes (H). In this example, the number of through-holes (H) increases from the bottom to the top, or The size of (H) can be increased.

A horizontal bulkhead 266 forming a third plane parallel to the second plane may be disposed between the first plane and the second plane. An opening 267 into which an induction pipe can be disposed may be formed inside the horizontal bulkhead 266 . In addition, since a plurality of through holes are formed in the horizontal partition wall 266, semiconductor process by-products can be collected while passing exhaust gas.

A lower cover partition wall 265 coupled to a lower surface of the lower plate 261 may be disposed between the lower plate 261 and the lower cover. A plurality of through-holes may also be formed in the lower cover partition wall 265, and in this case, the through-holes may have a uniform size.

An outlet partition wall 268 may be further disposed between the lower surface of the lower plate 261 and the lower cover in the lower collection unit 260 . The outlet partition wall 268 may be coupled to an upper surface of the lower cover.

The outlet partition wall 268 can prevent semiconductor process by-products that are not collected or collected and then fall from entering the discharge port, such as the upper partition wall, the lower partition wall, and the lower cover partition wall. For example, the outlet partition wall 268 is disposed around the exhaust port through which the exhaust gas is discharged in the space between the lower plate and the lower cover, and prevents semiconductor process by-products that fall after being collected on the upper part of the lower plate or the lower cover partition from entering the discharge port. can

8 is a view showing a path through which exhaust gas flows inside the collecting device according to an embodiment.

Referring to FIG. 8 , the exhaust gas flowing in the first direction through the inlet 211 of the upper cover 210 may be spread in a plane direction perpendicular to the first direction by the heater 240 .

In addition, the exhaust gas may move downward along the gap formed between the heater 240 and the inner surface of the case 220 and then flow toward the center along the upper plate 251 . Then, the exhaust gas that has flowed to the center may collide with the lower plate 261 after moving downward along the induction pipe 252 again.

Exhaust gas colliding with the lower plate 261 may spread sideways while moving upward according to the structure of the partition walls. The exhaust gas may move downward along the gap formed between the lower plate 261 and the case 220, flow toward the center along the lower cover 230, and then be discharged through the outlet 231.

9 is a diagram showing the speed of exhaust gas flowing inside the collecting device according to an embodiment.

Referring to Figure 9, the flow of the collection area comes out significantly lower than the inlet and outlet. This indicates that the exhaust gas containing the semiconductor process by-products stays for a long time in the collection region-the region of the upper collection part and the lower collection part-and the collection efficiency is increased.

When powder is accumulated on the inlet side of the collecting device, the replacement cycle of the collecting device is shortened, and on the contrary, when powder is accumulated on the outlet side, a problem may occur that the agglomerated powder flows into the vacuum pump because it is a part connected to the vacuum pump. The collecting device according to one embodiment can improve these problems by controlling the temperature and the flow of the exhaust gas.

10 is a diagram showing an internal temperature distribution in a collecting device according to an embodiment.

Referring to FIG. 10 , it can be seen that the inflowing exhaust gas is heated by a heater so as not to be excessively collected at the inlet side. In the center, an induction pipe that guides the heated exhaust gas to the lower side may be disposed. The temperature from the inlet of the collecting device to the induction pipe is maintained at 150 degrees or more to prevent semiconductor process by-products from forming powder in the corresponding area. can If a lot of powder is accumulated in the area, the replacement cycle of the collecting device may be shortened.

As described above, according to the present embodiment, it is possible to collect reaction by-products in the semiconductor manufacturing process. And, according to this embodiment, it is possible to efficiently collect reaction by-products in the ALD process.

Terms such as "comprise", "comprise" or "having" described above mean that the corresponding component may be inherent unless otherwise stated, and therefore do not exclude other components. It should be construed that it may further include other components. All terms, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs, unless defined otherwise. Commonly used terms, such as terms defined in a dictionary, should be interpreted as consistent with the meaning in the context of the related art, and unless explicitly defined in the present invention, they are not interpreted in an ideal or excessively formal meaning.

The above description is merely an example of the technical idea of the present invention, and various modifications and variations can be made to those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be construed according to the claims below, and all technical ideas within the equivalent range should be construed as being included in the scope of the present invention.

Claims (7)

A process chamber in which an atomic layer deposition (ALD) process is performed;
a collecting device connected to the process chamber through a first exhaust gas pipe and receiving exhaust gas containing semiconductor process by-products from the process chamber; and
A vacuum pump connected to the collecting device through a second exhaust gas pipe and generating pressure to form a flow of the exhaust gas;
The collection device,
An upper cover for introducing the exhaust gas into the inner space through an inlet;
A heater disposed below the inlet and heating the exhaust gas;
An upper plate forming a first plane at the lower side of the heater, an induction pipe for guiding the exhaust gas downward from a part of the upper plate, and a plurality of through holes disposed around the induction pipe at the lower side of the upper plate. An upper collection unit including an upper partition wall,
A lower collecting unit including a lower plate disposed below the induction pipe while forming a second plane parallel to the first plane, and
A lower cover disposed to cover the other side of the inner space and discharging the exhaust gas flowing along the induction pipe and the upper bulkhead
Semiconductor processing system. According to claim 1,
The inlet communicates with the first exhaust gas pipe, and an O-ring structure for preventing leakage of the exhaust gas is disposed in the inlet. According to claim 2,
A semiconductor processing system in which a flow path through which cooling water flows is formed in the inlet. According to claim 1,
The exhaust gas flows in a first direction from the inlet,
The semiconductor processing system in which the inlet, the heater, and the induction pipe are disposed in a straight line along the first direction. According to claim 4,
The heater includes a heating unit that converts electrical energy into thermal energy and a heat conduction plate formed around the heating unit to extend in a plane direction perpendicular to the first direction.
A semiconductor processing system comprising: According to claim 1,
The collecting device further includes a case surrounding a side surface of the inner space,
The upper plate is in contact with the case semiconductor processing system. According to claim 1,
A semiconductor processing system in which the size of each through hole increases from bottom to top.

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