CN115807265A

CN115807265A - Isolation baffle device of MOCVD reaction chamber

Info

Publication number: CN115807265A
Application number: CN202211637515.3A
Authority: CN
Inventors: 谢鹏飞; 张志明; 刘雷; 邢志刚; 徐春阳; 金隽; 周慧娟
Original assignee: Chuyun Technology Shaoxing Co ltd
Current assignee: Chuyun Technology Shaoxing Co ltd
Priority date: 2022-12-16
Filing date: 2022-12-16
Publication date: 2023-03-17

Abstract

The invention provides an isolation baffle device of an MOCVD reaction chamber, which comprises an annular baffle, an interlayer flow channel, a liquid injection channel, a liquid outlet channel, a plurality of injection passages and a plurality of discharge passages, wherein the interlayer flow channel is positioned in the annular baffle and is suitable for containing cooling liquid; the annular baffle plate comprises a plurality of annular section parts with different inner diameters from top to bottom so as to enable the annular baffle plate to be step-shaped; the section of the interlayer flow channel in the vertical direction is trapezoidal. According to the invention, the flow range of the cooling liquid in the interlayer flow channel is larger and the distribution of the cooling liquid is more uniform by adjusting the injection and the discharge positions of the cooling liquid in the isolation baffle device, the problem of nonuniform cooling of the isolation baffle is solved, the uniformity of the distribution of the internal temperature field in the reaction chamber is improved, the shape of the interlayer flow channel is designed, the dead angle in the flow process of the cooling liquid is reduced, and the cooling effect is further enhanced.

Description

Isolation baffle device of MOCVD reaction chamber

Technical Field

The invention relates to the technical field of metal organic compound chemical vapor deposition equipment, in particular to an isolation baffle plate device of an MOCVD reaction chamber.

Background

MOCVD (Metal-organic Chemical Vapor Deposition ) is a new Vapor phase epitaxial growth technology developed on the basis of Vapor phase epitaxial growth (VPE), and MOCVD is performed in a thermal decomposition reaction manner. In the design of the MOCVD reaction chamber, the most important part is the design of a flow field and a temperature field inside the reaction chamber, and the reaction process inside the reaction chamber can be stably carried out only by designing the appropriate flow field and temperature field, so that the utilization rate of a reactant source material is improved, and the quality of a deposited film is improved. Therefore, a separating baffle (shutter) is usually provided in the MOCVD equipment to influence the flow field and the temperature field distribution inside the reaction chamber.

Referring to fig. 1a of the specification, a plurality of process gases required for the mocvd epitaxial process enter the reaction chamber 10 through the gas inlet device of the upper cover 20, flow fields of the process gases are limited to a certain extent by the isolation baffle device 30 surrounding the inner side wall of the reaction chamber, flows of the process gases are guided onto the substrate tray 40, chemical reactions are performed on the surface of the substrate to deposit a thin film, and then the reacted gases (and reaction byproducts, etc.) are exhausted from the reaction chamber 10 through the exhaust holes at the bottom of the reaction chamber 10 by using a vacuum pump. The side wall of the reaction chamber 10 is provided with an opening for inserting or removing the substrate tray 40, and the barrier rib device 30 is movable between a first position for closing the opening and a second position for opening the opening.

The interior of the barrier device 30 is usually provided with a coolant pipeline, and the coolant is introduced into the barrier device 30 through a coolant port corresponding to the upper cover 20 to cool the barrier device 30. The water cooling structure is usually designed such that the cooling liquid is injected from the upper end of the isolation barrier device 30 and flows out from the upper end of the isolation barrier device 30, see fig. 1b.

By analyzing the application of the water-cooling structure of the prior art isolation barrier, see fig. 1c, it is found that: because the upper inlet and the upper outlet are adopted, the flow velocity of the upper layer cooling liquid in the isolation baffle is obviously higher than that of the lower layer cooling liquid, the uniformity of the flow velocity is poor, the isolation baffle is cooled unevenly, the temperature of the lower layer is far higher than that of the upper layer, the temperature field in the reaction chamber is uneven, and the uniformity of the epitaxial layer grown on the surface of the substrate is influenced. And when the device is used for a long time, the deformation of the isolation baffle is difficult to predict due to uneven cooling, the repeatability of material growth is easily influenced, and the judgment of the poor repeatability caused by the process is interfered. The service life of the insulating barrier itself is also affected.

Therefore, there is a need to provide a new isolation baffle for MOCVD reactor to solve the above problems in the prior art.

Disclosure of Invention

The invention aims to provide an isolation baffle device of an MOCVD reaction chamber, which is used for solving the problem of uneven cooling of the isolation baffle device.

In order to achieve the above object, the present invention provides an isolation barrier device for an MOCVD reaction chamber, comprising: the cooling device comprises an annular baffle, an interlayer flow channel, a liquid injection channel, a liquid outlet channel, a plurality of injection passages and a plurality of discharge passages, wherein the interlayer flow channel is positioned in the annular baffle and is suitable for containing cooling liquid; the annular baffle comprises a plurality of annular section parts with different inner diameters from top to bottom so that the annular baffle is step-shaped; the section of the interlayer flow channel in the vertical direction is trapezoidal, so that the interlayer flow channel is in a circular truncated cone shape.

Specifically, a plurality of injection points of the injection passages are arranged on the interlayer flow channel, and the plurality of injection points of the injection passages are uniformly distributed along the interlayer flow channel from top to bottom.

Exemplarily, when the interlayer flow channel communicates with a plurality of injection passages, the plurality of injection passages are parallel to each other; when the interlayer flow channel communicates with a plurality of discharge passages, the plurality of discharge passages are parallel to each other.

In one possible embodiment, the injection passages are located on a vertical section of the interlayer flow channel, and each injection passage forms an included angle with a section of the interlayer flow channel, where the included angle is greater than or equal to 30 °.

In a possible embodiment, the included angle is greater than or equal to 60 ° and less than or equal to 120 °.

In one possible embodiment, the included angle is greater than or equal to 90 ° and less than or equal to 100 °.

Optionally, the included angle formed by each injection passage and the section of the interlayer flow channel is equal.

In a possible embodiment, the number of the liquid injection channels is one, and the number of the liquid outlet channels is one; and a connecting line of the liquid injection channel and the liquid outlet channel is intersected with the central axis of the interlayer flow channel.

In a particular embodiment, the number of injection passages is equal to the number of discharge passages.

Illustratively, the injection passage and the discharge passage are symmetrically disposed about a central axis of the sandwich flow channel at both ends of the sandwich flow channel.

The isolation baffle device of the MOCVD reaction chamber has the beneficial effects that: the utility model discloses a set up a plurality of coolant liquid injection passageways at the inside intermediate layer runner one end of isolation baffle device, set up a plurality of coolant liquid discharge passageways at the other end of intermediate layer runner, make the coolant liquid can flow into the intermediate layer runner from different positions and also can derive the intermediate layer runner from different positions, thereby the velocity of flow distribution state of coolant liquid in the intermediate layer runner has been adjusted, make the flow range of coolant liquid in the intermediate layer runner bigger, and it is more even to distribute, and set up the annular baffle of isolation baffle device into multistage formula structure in order to reduce the production of gaseous flow in-process dead zone and vortex in the reacting chamber, simultaneously with the intermediate layer runner design in the annular baffle for the round platform shape, and not with the step form that the annular baffle shape is the same, can reduce the dead angle of coolant liquid flow in-process, further strengthen the cooling effect. Compared with the prior art, the design of the invention obviously improves the problem of uneven cooling of the isolation baffle device, thereby improving the uniformity of the distribution of the internal temperature field in the reaction chamber, and being beneficial to improving the uniformity of the epitaxial layer grown on the surface of the substrate. Meanwhile, the cooling effect of the isolation baffle device is obviously improved, the isolation baffle is not easy to deform, and the interference to the repeatability of the epitaxial growth process is reduced.

Drawings

FIG. 1a is a schematic structural diagram of a MOCVD reaction chamber in the prior art;

FIG. 1b is a schematic structural diagram of an isolation baffle device of a MOCVD reaction chamber in the prior art;

FIG. 1c is a simulated view of the effect of the flow of coolant in a prior art barrier baffle device;

fig. 2a to 2b are schematic structural diagrams of an isolation baffle device of an MOCVD reaction chamber in embodiment 1 of the present invention and corresponding simulation diagrams of a cooling liquid flow effect;

fig. 3a to 3b are schematic structural diagrams of an isolation baffle device of an MOCVD reaction chamber in embodiment 2 of the present invention and corresponding simulation diagrams of a cooling liquid flow effect;

fig. 4a to 4b are schematic structural diagrams of an isolation baffle device of an MOCVD reaction chamber according to embodiment 3 of the present invention and corresponding simulation diagrams of a cooling liquid flow effect;

fig. 5a to 5b are schematic structural diagrams of an isolation baffle device of an MOCVD reaction chamber in embodiment 4 of the present invention and corresponding simulation diagrams of a cooling liquid flow effect;

fig. 6a to 6b are schematic structural diagrams of an isolation baffle device of an MOCVD reaction chamber according to embodiment 5 of the present invention and corresponding simulation diagrams of a cooling liquid flow effect;

fig. 7a to 7b are schematic structural diagrams of an isolation baffle device of an MOCVD reaction chamber according to embodiment 6 of the present invention and corresponding simulation diagrams of a cooling liquid flow effect;

fig. 8a to 8b are schematic structural diagrams of an isolation baffle device of an MOCVD reaction chamber in embodiment 7 of the present invention and simulation diagrams of corresponding cooling liquid flow effects.

Reference numerals are as follows:

100-ring baffle; 1-interlayer flow channel; 21-outer layer cylindrical baffle; 22-inner layer cylindrical baffle; 31-a liquid injection channel; 32-a liquid outlet channel; 41-an injection path; 42-a discharge passage; 5-central axis of the sandwich flow channel.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and similar words are intended to mean that the element or item preceding the word comprises the element or item listed after the word and its equivalent, but not the exclusion of other elements or items.

Aiming at the problems in the prior art, the embodiment of the invention provides an isolation baffle plate device of an MOCVD reaction chamber.

Referring to fig. 2a, the isolating baffle device of the mocvd reactor comprises: the annular baffle 100, the interlayer flow channel 1 which is positioned in the annular baffle 100 and is suitable for containing cooling liquid, a liquid injection channel 31 which is positioned at one end of the interlayer flow channel 1, a liquid outlet channel 32 which is positioned at the other end of the interlayer flow channel 1, a plurality of injection passages 41 which are used for communicating the interlayer flow channel 1 with the liquid injection channel 31, and a plurality of discharge passages 42 which are used for communicating the interlayer flow channel 1 with the liquid outlet channel 32. The annular baffle 100 comprises a plurality of annular segments with different inner diameters from top to bottom, so that the annular baffle 100 is stepped. The section of the interlayer flow channel in the vertical direction is trapezoidal, so that the interlayer flow channel is in a circular truncated cone shape.

In the isolation baffle device of the MOCVD reaction chamber of the embodiment, one end of the interlayer flow channel 1 is provided with a plurality of injection passages 41, and the other end of the interlayer flow channel 1 is provided with a plurality of discharge passages 42, so that the cooling liquid can be injected into the interlayer flow channel 1 from different positions, and the cooling liquid can be led out from different positions of the interlayer flow channel 1, thereby adjusting the flow velocity distribution state of the cooling liquid in the interlayer flow channel 1, so that the flow range of the cooling liquid in the interlayer flow channel 1 is larger, and the distribution is more uniform, the annular baffle 100 is provided with a multi-section structure, so as to reduce the generation of dead zones and eddy currents in the region during the flow process in the reaction chamber, the interlayer flow channel 1 in the annular baffle 100 is designed into a circular truncated cone shape instead of a step shape which is the same as the annular baffle 100, so that the dead zone during the flow of the cooling liquid can be reduced, and the cooling effect is further enhanced. Compared with the prior art, the design of this embodiment has obviously improved the inhomogeneous problem of isolation baffle device cooling, has improved the homogeneity of the inside temperature field distribution of reaction chamber, consequently is favorable to the homogeneity promotion of substrate surface growth epitaxial layer. Meanwhile, the cooling effect of the isolation baffle device is obviously improved, the isolation baffle is not easy to deform, and the interference on the repeatability of the epitaxial growth process is reduced.

In a possible embodiment, at least two connecting rods are installed on the top of the annular baffle 100, and a liquid injection channel 31 for introducing the cooling liquid into the interlayer flow channel 1 inside the annular baffle 100 or a liquid outlet channel 32 for leading the cooling liquid out of the interlayer flow channel 1 inside the annular baffle are arranged in each connecting rod, wherein the liquid injection channel 31 and the liquid outlet channel 32 are included. At one end of the interlayer flow channel 1, the interlayer flow channel 1 is communicated with the liquid injection channel 31 through a plurality of injection passages 41, and at the other end of the interlayer flow channel 1, the interlayer flow channel 1 is communicated with the liquid outlet channel 32 through a plurality of discharge passages 42.

In a specific embodiment, when the isolation baffle device of the MOCVD reaction chamber is provided with two channels for injecting or guiding the cooling liquid into or out of the interlayer flow channel 1, one channel is a liquid injection channel 31, and the other channel is a liquid outlet channel 32. Preferably, the liquid injection channel 31 and the liquid outlet channel 32 are distributed oppositely, and a connecting line between the liquid injection channel 31 and the liquid outlet channel 32 intersects with the central axis 5 of the interlayer flow channel, so that after the cooling liquid flows into the interlayer flow channel 1 through the liquid injection channel 31, the range of the interlayer flow channel 1 passing through when the cooling liquid flows in any direction is equivalent in the process of flowing to the liquid outlet channel 32, and the uniform distribution of the cooling liquid is facilitated.

Further, the injection passage 41 and the discharge passage 42 may be symmetrically distributed about the central axis 4 of the sandwich flow channel at both ends of the sandwich flow channel 1. That is, the injection passage 41 and the discharge passage 42 include the same number of passages, the same height, and the same angle with the interlayer flow path 1. The injection passage 41 and the discharge passage 42 may include passages having different numbers and/or different heights and angles.

In addition, the structural design of the embodiment makes it unnecessary to clearly distinguish which of the channels is the liquid inlet channel 31 and which is the liquid outlet channel 32. For example, when two channels for injecting or discharging the cooling liquid into or from the interlayer flow channel 1 are provided, one of the channels is selected as the liquid injection channel 31, and the other is the liquid outlet channel 32.

In a possible embodiment, the plurality of injection passages 41 are uniformly distributed. Specifically, the interlayer flow channel 1 is provided with a plurality of injection points of the injection passage 41, and the injection points of the plurality of injection passages 41 are uniformly distributed along the interlayer flow channel 1 from top to bottom.

In a possible embodiment, the number of injection passages 41 is equal to the number of discharge passages 42.

In a possible embodiment, the plurality of injection passages 41 are all located on a section of the interlayer flow channel 1 in the vertical direction and are parallel to each other; or the plurality of injection passages 41 are not all located on the section of the sandwich flow channel 1 in the vertical direction, that is, at least one passage of the plurality of injection passages 4 is located on a plane which forms a certain angle with the section of the sandwich flow channel 1 in the vertical direction.

The arrangement of the plurality of discharge passages 42 is similar to that of the injection passage 41 described above.

The specific arrangement of the plurality of injection passages 41 and the plurality of discharge passages 42 is adjusted in accordance with the flow velocity distribution state of the cooling liquid in the sandwiched flow channel 1.

In order to ensure the flow condition of the airflow inside the MOCVD equipment (region a), the isolation baffle is of a multi-section structure and comprises a plurality of annular sections with different inner diameters from top to bottom, so that the annular baffle 100 is in a step shape, and an included angle is formed between at least part of the annular sections and the vertical direction, so that the airflow inside the MOCVD equipment does not generate a dead zone and a vortex in the flow process.

In one embodiment of the present invention, the shape of the sandwich flow channel 1 is identical to the shape of the ring baffle 100, and the sandwich flow channel 1 includes a plurality of ring segments with different inner diameters, so that the sandwich flow channel 1 is also stepped. In this embodiment, the coolant can be poured into the interlayer runner 1 from different positions, and compared with the prior art, the range of the coolant flowing in the interlayer runner 1 can be increased, and the cooling effect is improved.

However, the multi-section structure of the interlayer flow channel 1 enables different included angles to be formed between each annular section of the interlayer flow channel 1 and the vertical direction, the flowing directions of the cooling liquid in each section are different, and the different flowing directions of the cooling liquid flowing in the interlayer flow channel 1 affect each other, so that dead zones and vortexes exist in the flowing process of the cooling liquid in different flowing directions.

The present invention further provides another preferred embodiment, in which the shape of the interlayer flow channel 1 is different from the shape of the annular baffle 100, and the interlayer flow channel 1 is trapezoidal in the section of the interlayer flow channel 1 in the vertical direction, that is, the region of the interlayer flow channel 1 communicating with the injection passage 41 is linear, so that the flow direction of the cooling liquid in the interlayer flow channel 1 after the cooling liquid is injected into the interlayer flow channel 1 through the injection passage 41 is the same. Therefore, dead angles of the cooling liquid in the flowing process in the interlayer flow channel 1 can be reduced, and the cooling effect is enhanced.

Specifically, the annular baffle 100 is formed by welding an outer-layer cylindrical baffle 21 and an inner-layer cylindrical baffle 22, and a space between an inner wall of the outer-layer cylindrical baffle 21 and an outer wall of the inner-layer cylindrical baffle 22 forms the interlayer flow passage 1. The inner diameter of the outer layer cylindrical baffle 21 and the inner layer cylindrical baffle 22 are gradually increased from top to bottom, and correspondingly, the inner diameter of the interlayer flow channel 1 is gradually increased from top to bottom.

In a possible embodiment, when the sandwich flow channel 1 communicates with a plurality of injection passages 41, the plurality of injection passages 41 are parallel to each other; when the sandwich flow path 1 communicates with the plurality of discharge passages 42, the plurality of discharge passages 42 are parallel to each other. In the flowing process of the cooling liquid, the flowing directions in the injection passage 41 before the cooling liquid is injected into the interlayer flow channel 1 are the same, so that dead angles and vortexes caused by mutual influence of the flowing directions in the flowing process can be better avoided.

In one possible embodiment, the plurality of injection passages 41 are all located on the section of the sandwich channel 1 in the vertical direction, and each injection passage 41 forms an included angle with the section of the sandwich channel 1

Included angle

Greater than or equal to 30 deg.

Preferably, the included angle

60 DEG or more and 120 DEG or less.

Preferably, the included angle

90 DEG or more and 100 DEG or less.

In a possible embodiment, the angles formed by the injection passages 41 and the section of the sandwich channel 1 are all equal.

Illustratively, referring to fig. 2a, the sandwich channel 1 is communicated with n injection passages 41, and any one injection passage 41 of the n injection passages 41 forms an included angle with the section of the sandwich channel 1

n injection vias 41 form n included angles

n included angles

May or may not be the same. Preferably, when the interlayer flow channel 1 communicates n (n ≧ 2) injection passages 41, the n injection passages 41 are parallel to each other, that is, the n injection passages 41 form n included angles with the section of the interlayer flow channel 1

Are all equal.

The embodiment of the invention provides an isolation baffle device of an MOCVD reaction chamber, so that cooling liquid can flow into an interlayer flow channel from different positions and also can be led out of the interlayer flow channel from different positions, and dead angles of the cooling liquid in the interlayer flow channel 1 in the flowing process can be reduced, so that the flow velocity distribution state of the cooling liquid in the interlayer flow channel is adjusted, the flowing range of the cooling liquid in the interlayer flow channel is larger, and the cooling liquid is distributed more uniformly.

The following provides an embodiment in which the included angle formed by the injection passage 41 and the section of the interlayer flow channel is different (i.e. different injection angles), which significantly improves the problem of uneven cooling of the isolation baffle device and the uniformity of the internal temperature field distribution in the reaction chamber, compared with the comparative example, and thus is beneficial to improving the uniformity of the epitaxial layer grown on the surface of the substrate. The distribution state of the flow speed of the cooling liquid in the interlayer flow channel 1 is influenced, so that the cooling effect of the isolation baffle device is demonstrated.

Comparative example

Referring to the attached drawings 1a to 1c in the specification, an isolation baffle device in the prior art comprises an annular baffle, an interlayer flow channel, a liquid injection channel and a liquid outlet channel, wherein the interlayer flow channel is located inside the annular baffle and is suitable for containing cooling liquid, the liquid injection channel is located above the interlayer flow channel, and the liquid outlet channel is located above the interlayer flow channel.

Example 1

Referring to fig. 2a, the isolation barrier apparatus comprises: the annular baffle 100, the interlayer flow channel 1 which is positioned in the annular baffle 100 and is suitable for containing cooling liquid, the liquid injection channel 31 which is positioned at one end of the interlayer flow channel 1, the liquid outlet channel 32 which is positioned at the other end of the interlayer flow channel 1, a plurality of injection passages 41 which are used for communicating the interlayer flow channel 1 with the liquid injection channel 31, and a plurality of discharge passages 42 which are used for communicating the interlayer flow channel 1 with the liquid outlet channel 32. Wherein the liquid filling channel 31 and the liquid outlet channel 32 are symmetrically arranged.

The annular baffle 100 is stepped in a vertical cross section, and the sandwich flow channel 1 is trapezoidal in a vertical cross section. The interlayer flow channel 1 is communicated with a plurality of injection passages 41, the injection passages 41 are parallel to each other, and the included angle formed by each injection passage 41 and the tangent plane of the interlayer flow channel 1 is 30 degrees. The discharge passage 42 is provided symmetrically to the injection passage 41.

The simulation diagram of the cooling liquid flowing effect of the isolation baffle device is shown in fig. 2b, and it can be seen that under the angle setting, although the cooling liquid still generates vortex flow in the interlayer flow channel 1, compared with the proportion, the flowing area of the cooling liquid is obviously increased, and the cooling effect is improved to some extent.

Example 2

Referring to fig. 3a and 3b, the difference between the embodiment 2 and the embodiment 1 is that each injection passage 41 in the embodiment 1 forms an angle of 30 ° with the tangent plane of the interlayer flow channel 1, and each injection passage 41 in the embodiment 2 forms an angle of 45 ° with the tangent plane of the interlayer flow channel 1. With this angle setting, the area through which the coolant flows is larger than in the case of the comparative example and example 1, and although the coolant still flows while being swirled, the area of the swirling area is reduced.

Example 3

Referring to fig. 4a and 4b, the difference between the embodiment 3 and the embodiment 2 is that in this embodiment, each injection passage 41 forms an angle of 60 ° with the section of the sandwich flow channel 1. With this angle setting, the area through which the coolant flows is larger than in the case of the comparative example and example 2, and although the coolant still flows while generating a vortex, the area of the vortex area is reduced.

Example 4

Referring to fig. 5a and 5b, the difference between the embodiment 4 and the embodiment 3 is that in this embodiment, each injection passage 41 forms an angle of 90 ° with the section of the sandwich flow channel 1. Under the angle setting, no vortex is generated when the cooling liquid flows through the interlayer flow channel 1, and compared with the schemes of a comparative example and an embodiment 3, the cooling liquid has larger area of flowing through areas and better cooling effect.

Example 5

Referring to fig. 6a and 6b, the difference between the embodiment 5 and the embodiment 4 is that each injection channel 41 forms an angle of 100 ° with the section of the interlayer flow channel 1 in this embodiment. Under the angle setting, no vortex is generated when the cooling liquid flows in the interlayer flow channel 1, and compared with the schemes of a comparative example and an embodiment 4, the flowing uniformity of the cooling liquid is better, and the cooling effect is more ideal.

Example 6

Referring to fig. 7a and 7b, the difference between the embodiment 6 and the embodiment 5 is that each injection passage 41 forms an angle of 115 ° with the section of the sandwich flow channel 1 in this embodiment. Under the angle setting, although the cooling liquid flow area is reduced compared with the scheme of the embodiment 5, the cooling liquid flow can form a vortex area, compared with a comparative example, the cooling liquid flow area under the angle setting is larger, and the cooling effect is better.

Example 7

Referring to fig. 8a and 8b, the difference between the embodiment 7 and the embodiment 6 is that in this embodiment, each injection passage 41 forms an angle of 120 ° with the section of the sandwich flow channel 1. Under the angle setting, although the cooling liquid flow area is reduced compared with the scheme of the embodiment 5, the cooling liquid flow area can form a vortex area, compared with the comparative example, the cooling liquid flow area under the angle setting is larger, and the cooling effect is better.

In conclusion, the isolation baffle device of the MOCVD reaction chamber provided by the invention has the advantages that the distribution range of the cooling liquid in the interlayer flow channel is wider and the distribution is more uniform, the problem of non-uniform cooling of the isolation baffle device is solved, and the uniformity of the distribution of the internal temperature field in the reaction chamber can be improved. Furthermore, by adjusting the included angle formed by the injection passage on the interlayer flow channel and the tangent plane of the annular section part where the injection passage is positioned, the vortex phenomenon of the cooling liquid in the interlayer flow channel can be eliminated, and the cooling uniformity is more ideal.

Although the embodiments of the present invention have been described in detail hereinabove, it is apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it is to be understood that such modifications and variations fall within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention as described herein is capable of other embodiments and of being practiced or of being carried out in various ways.

Claims

1. An isolation baffle device of an MOCVD reaction chamber, comprising:

the cooling device comprises an annular baffle, an interlayer flow channel, a liquid injection channel, a liquid outlet channel, a plurality of injection passages and a plurality of discharge passages, wherein the interlayer flow channel is positioned in the annular baffle and is suitable for containing cooling liquid;

the annular baffle plate comprises a plurality of annular section parts with different inner diameters from top to bottom so as to enable the annular baffle plate to be step-shaped;

the section of the interlayer flow channel in the vertical direction is trapezoidal, so that the interlayer flow channel is in a circular truncated cone shape.

2. The isolation baffle device of the MOCVD reaction chamber according to claim 1, wherein a plurality of injection points of the injection passages are arranged on the interlayer flow channel, and the plurality of injection points of the injection passages are uniformly distributed along the interlayer flow channel from top to bottom.

3. The isolation baffle device of the MOCVD reactor according to claim 1, wherein when the interlayer flow channel is communicated with a plurality of injection passages, the plurality of injection passages are parallel to each other;

when the interlayer flow channel communicates with a plurality of discharge passages, the plurality of discharge passages are parallel to each other.

4. The isolation baffle device for the MOCVD reaction chamber according to claim 1, wherein the injection passages are all located on a section of the interlayer flow channel in the vertical direction, and each injection passage forms an included angle with a section of the interlayer flow channel, and the included angle is greater than or equal to 30 degrees.

5. The isolating baffle device for the MOCVD reaction chamber of claim 4, wherein the included angle is greater than or equal to 60 degrees and less than or equal to 120 degrees.

6. The isolating baffle device for an MOCVD reactor according to claim 5, wherein the included angle is greater than or equal to 90 ° and less than or equal to 100 °.

7. The isolation baffle device for the MOCVD reaction chamber, according to claim 4, wherein the included angles formed by the injection passages and the tangent planes of the interlayer flow channels are all equal.

8. The isolation baffle device for the MOCVD reaction chamber, according to claim 1, wherein the number of the liquid injection channels is one, and the number of the liquid outlet channels is one;

and a connecting line of the liquid injection channel and the liquid outlet channel is intersected with the central axis of the interlayer flow channel.

9. The isolating baffle device for an MOCVD reactor according to claim 8, wherein the number of said injection passages is equal to the number of said exhaust passages.

10. The apparatus as claimed in any one of claims 1 to 9, wherein the injection passage and the exhaust passage are symmetrically disposed at both ends of the sandwich flow passage with respect to a central axis of the sandwich flow passage.