KR20230077713A - Method and apparatus for removing electronic components connected to a circuit board - Google Patents

Method and apparatus for removing electronic components connected to a circuit board Download PDF

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KR20230077713A
KR20230077713A KR1020230067182A KR20230067182A KR20230077713A KR 20230077713 A KR20230077713 A KR 20230077713A KR 1020230067182 A KR1020230067182 A KR 1020230067182A KR 20230067182 A KR20230067182 A KR 20230067182A KR 20230077713 A KR20230077713 A KR 20230077713A
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electronic component
laser beam
heating
vacuum suction
circuit board
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KR1020230067182A
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KR102639422B1 (en
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마티아스 페트케
안드레 콜바소브
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파크 테크-파카징 테크놀로지이스 게엠베하
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04—Mounting of components, e.g. of leadless components
    • H05K13/0486—Replacement and removal of components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/1224—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in vacuum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/018—Unsoldering; Removal of melted solder or other residues
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/034—Observing the temperature of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1462—Nozzles; Features related to nozzles
    • B23K26/1464—Supply to, or discharge from, nozzles of media, e.g. gas, powder, wire
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04—Mounting of components, e.g. of leadless components
    • H05K13/0404—Pick-and-place heads or apparatus, e.g. with jaws
    • H05K13/0408—Incorporating a pick-up tool
    • H05K13/0409—Sucking devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/225—Correcting or repairing of printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494—Heating methods for reflowing of solder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/17—Post-manufacturing processes
    • H05K2203/176—Removing, replacing or disconnecting component; Easily removable component

Abstract

본 발명은 증가된 속도와 단순한 설계-툴로 회로 기판으로부터 전자 부품을 제거하기 위한 방법 및 장치에 관한 것이다. 평면 회로 기판 상에 다수의 미니 또는 μLED가 매트릭스로 배열된 디스플레이 기술 분야에서는 결함있는 LED를 교체하거나 제거해야 할 필요가 많다. 이는 일반적으로 결함있는 LED를 가열한 다음 이를 그립핑 툴로 기계적으로 제거하여 수행된다. 가열은 고온 질소 또는 접촉 가열로 이루어진다. 제거 방법은 레이저 빔으로 결함있는 전자 부품 및 회로 기판과의 접촉 영역을 선택적으로 가열하는 단계를 포함한다. 가열 단계와 동시에 진공 흡입이 제거될 전자 부품에 적용된다. 레이저 가열 및 진공 흡입으로 인해 제거될 전자 부품이 회로 기판에서 분리되면 전자 부품이 빨려 나간다. 이는 결함있는 전자 부품을 제거하기 위한 진공 흡입 노즐과 진공 흡입 노즐을 통해 가열 레이저 빔을 결함있는 부품 상으로 안내하는 레이저 빔 방출기를 적용함으로써 달성된다. 레이저 빔을 사용한 가열과 진공 노즐을 사용한 제거는 모두 x-y 평면으로 위치결정되면 되고, 즉 z 평면으로의 이동은 필요없다. 이에 따라 처리 속도가 증가한다.The present invention relates to a method and apparatus for removing electronic components from circuit boards with increased speed and simple design-tools. In the field of display technology where a large number of mini or μLEDs are arranged in a matrix on a flat circuit board, there is a need to replace or remove defective LEDs. This is typically done by heating the defective LED and then mechanically removing it with a gripping tool. Heating is done with hot nitrogen or contact heating. The removal method includes selectively heating a contact area between the defective electronic component and the circuit board with a laser beam. Simultaneously with the heating step, vacuum suction is applied to the electronic component to be removed. When the electronic component to be removed is separated from the circuit board by laser heating and vacuum suction, the electronic component is sucked out. This is achieved by applying a vacuum suction nozzle for removing the defective electronic component and a laser beam emitter which directs a heating laser beam through the vacuum suction nozzle onto the defective component. Both heating with a laser beam and ablation with a vacuum nozzle need only be positioned in the x-y plane, i.e. no movement in the z plane is required. This increases the processing speed.

Description

회로 기판에 연결된 전자 부품을 제거하는 방법 및 장치{Method and apparatus for removing electronic components connected to a circuit board}Method and apparatus for removing electronic components connected to a circuit board

본 발명은 청구항 1 내지 9에 따른 회로 기판으로부터 전자 부품을 제거하기 위한 방법 및 장치에 관한 것이다.The present invention relates to a method and apparatus for removing an electronic component from a circuit board according to claims 1 to 9.

평면 회로 기판 상에 다수의 미니 또는 μLED가 매트릭스로 배열되는 디스플레이 기술 분야에서는 결함있는 LED를 교체 또는 제거해야 하는 경우가 자주 있다. 이는 일반적으로 결함있는 LED를 가열한 다음 그립핑 툴을 써서 기계적으로 제거하여 수행된다. 가열은 고온 질소를 써서 또는 접촉 가열로 이루어진다.In the field of display technology, where a large number of mini or μLEDs are arranged in a matrix on a flat circuit board, it is often necessary to replace or remove defective LEDs. This is usually done by heating the defective LED and then mechanically removing it with a gripping tool. Heating is done with hot nitrogen or by contact heating.

한국 등록특허 제10-1890934 B1호로부터 레이저 빔을 사용하여 결함있는 LED를 가열하고 진공 피펫과 같은 그립핑 툴로 이를 제거하는 결함있는 μLED를 제거하는 방법이 알려져 있다. 이러한 시스템의 단점은 가열 레이저가 x-y 평면으로 위치해야 하는 반면 그립핑 툴은 x-y-z 공간에 위치해야 한다는 것이다. 이로 인해 처리 속도가 감소한다.A method for removing a defective μLED by heating the defective LED using a laser beam and removing it with a gripping tool such as a vacuum pipette is known from Korean Patent Registration No. 10-1890934 B1. A disadvantage of this system is that the heating laser must be positioned in the x-y plane, while the gripping tool must be positioned in the x-y-z space. This reduces the processing speed.

따라서, 본 발명의 목적은 처리 속도를 증가시키고 간단한 툴-설계를 사용하면서 기판에서 전자 부품을 제거하는 방법 및 장치를 제공하는 것이다.Accordingly, it is an object of the present invention to provide a method and apparatus for removing electronic components from a substrate while increasing processing speed and using a simple tool-design.

이 목적은 청구항 1에 따른 방법 및 청구항 9에 따른 장치로 해결된다.This object is solved by a method according to claim 1 and a device according to claim 9.

제거 방법은 레이저 빔에 의해 결함있는 전자 부품 및 회로 기판과의 접촉 영역을 선택적으로 가열하는 단계를 포함한다. 가열 단계와 동시에 제거될 전자 부품에 진공 흡입이 적용된다. 레이저 가열 및 진공 흡입으로 인해 제거될 전자 부품이 회로 기판에서 분리되면 그 전자 부품은 빨려 나간다. 이는 결함있는 전자 부품을 제거하기 위한 진공 흡입 노즐과 진공 흡입 노즐을 통해 가열 레이저 빔을 결함있는 부품 상으로 안내하는 레이저 빔 방출기를 적용함으로써 달성된다.The removal method includes selectively heating a contact area between the defective electronic component and the circuit board by means of a laser beam. Simultaneously with the heating step, vacuum suction is applied to the electronic component to be removed. When the electronic component to be removed is separated from the circuit board by laser heating and vacuum suction, the electronic component is sucked out. This is achieved by applying a vacuum suction nozzle for removing the defective electronic component and a laser beam emitter which directs a heating laser beam through the vacuum suction nozzle onto the defective component.

레이저 빔을 사용한 가열과 진공 노즐을 사용한 제거는 모두 단지 x-y 평면으로의 위치결정만 필요할 뿐이고, 즉 z 평면에서의 이동은 필요하지 않다. 이에 따라 처리 속도가 증가한다.Both heating with a laser beam and ablation with a vacuum nozzle require only positioning in the x-y plane, ie no movement in the z plane. This increases the processing speed.

바람직하게는 레이저 빔은 진공 흡입 노즐을 통해 지향된다. 따라서 진공 흡입 노즐을 위치시킴으로써 그와 동시에 레이저 빔이 올바른 지점에 위치하게 된다.Preferably the laser beam is directed through a vacuum suction nozzle. Thus, by positioning the vacuum suction nozzle, the laser beam is at the same time positioned in the right spot.

대안으로서, 레이저 빔은 진공 노즐의 외부에 장착되어 그 측면으로부터 진공 노즐의 흡입구 아래의 결함있는 부품의 위치로 레이저 빔을 향하게 한다. 역시 단지 하나의 장치만 x-y 평면에 배치되면 된다.Alternatively, the laser beam is mounted on the outside of the vacuum nozzle and directs the laser beam from its side to the location of the defective part below the suction inlet of the vacuum nozzle. Again, only one device needs to be placed in the x-y plane.

종래의 수리 공정과 달리 툴 개구는 부품의 외부 윤곽보다 더 커서 분리된 부품이 진공 채널 내로 통과할 수 있게 한다. 물리적 접촉에 의해 << 100μm의 범위의 부품들을 취급하기 위한 툴의 설계 및 제조에 대한 제약들과 무관하며, 이는 개시된 제거 프로세스를 최소 피치의 처리와 관련하여 더 발전된 것으로 만든다.Unlike conventional repair processes, the tool opening is larger than the outer contour of the part to allow the removed part to pass into the vacuum channel. It is independent of constraints on the design and manufacture of tools for handling components in the range of << 100 μm by physical contact, which makes the disclosed ablation process more advanced with respect to processing of minimum pitch.

바람직하게는 가열 단계 동안 레이저 빔에 대한 온도를 제어하기 위해 가열 단계 동안 결함있는 전자 부품의 온도 및 그 위치에서의 온도가 측정된다. 이에 의해 결함있는 부품의 위치에서 과도한 열과 온도가 생략되고 결함있는 부품의 위치에서 회로 기판의 버닝 손상(damaging burning)이 생략된다.Preferably, the temperature of the defective electronic component and the temperature at its location are measured during the heating step to control the temperature to the laser beam during the heating step. This avoids excessive heat and temperature at the location of the defective component and damaging burning of the circuit board at the location of the defective component.

바람직한 실시예에 따르면, 측정된 온도에 변화가 있을 때 가열이 중단된다. 온도의 이러한 큰 변화는 결함 부품이 진공 흡입에 의해 보드에서 분리되었음을 나타낸다. 레이저 빔 가열을 중지함으로써 보드에 대한 손상이 생략된다.According to a preferred embodiment, heating is stopped when there is a change in the measured temperature. This large change in temperature indicates that the defective component has been separated from the board by vacuum suction. By stopping the laser beam heating, damage to the board is omitted.

온도는 바람직하게는 가열된 지점에 접촉하지 않고 적절한 광학기가 있는 IR 센서로 측정된다. IR 센서는 레이저 상호작용 영역 외부에 위치하거나 빔 스플리터를 사용하여 광학 레이저 경로의 일부가 될 수 있다.The temperature is preferably measured with an IR sensor with suitable optics without contacting a heated spot. The IR sensor can be located outside the laser interaction area or can be part of the optical laser path using a beam splitter.

대안적으로, 온도 센서에는 광 가이드 섬유(light guide fiber)가 제공되고 그 자유단은 가열 지점 근처에 위치한다. 이로써 다시 가열 지점에서의 온도를 측정할 수 있다.Alternatively, the temperature sensor is provided with a light guide fiber, the free end of which is located near the heating point. This again makes it possible to measure the temperature at the heating point.

바람직한 실시예에 따르면, 솔더의 산화를 방지하고 그리고/또는 회로 기판으로부터 결함있는 부품의 분리 프로세스에 긍정적인 영향을 미치기 위해 프로세스 가스가 수동적으로 또는 능동적으로 가열 지점에 적용된다.According to a preferred embodiment, a process gas is passively or actively applied to the heating point to prevent oxidation of the solder and/or to positively influence the process of separating the defective component from the circuit board.

추가적인 하위 청구항은 추가적인 바람직한 실시예에 관한 것이다.Further subclaims relate to further preferred embodiments.

이하에서 본 발명의 바람직한 실시예를 도면을 참조하여 설명한다.Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

도 1은 결함있는 μLED를 포함하는 μLED 매트릭스 및 본 발명의 제 1 실시예에 따른 제거 툴을 도시한 스케치이다.
도 2는 레이저 빔이 진공 흡입 노즐을 통해 지향되는 본 발명의 제 1 실시예의 상세를 도시한 단면도이다.
도 3은 레이저 빔이 측면에서 흡입 노즐 개구 아래의 지점으로 지향되는 본 발명의 제 2 실시예를 나타내는 단면도이다.
도 4는 가열 지점을 향하는 광학기를 갖는 IR 온도 센서를 구비한 제 3 실시예를 나타내는 스케치이다.
도 5는 자유 단부가 가열 지점 근처에 위치하는 광 가이드 섬유가 제공된 IR 온도 센서를 갖는 제 4 실시예를 나타내는 스케치이다.
도 6은 빔 분할 유닛에 의해 레이저 경로에 결합된 IR 온도 센서를 갖는 제 4 실시예를 나타내는 스케치이다.
도 7은 본 발명의 제 3, 제 4 및 제 5 실시예에서 다양한 구성 요소의 상호연결을 예시하는 스케치를 도시한다.1 is a sketch showing a μLED matrix containing defective μLEDs and a removal tool according to a first embodiment of the present invention.
2 is a cross-sectional view showing details of a first embodiment of the present invention in which a laser beam is directed through a vacuum suction nozzle.
Figure 3 is a cross-sectional view showing a second embodiment of the present invention in which a laser beam is directed from the side to a point below the suction nozzle opening.
Figure 4 is a sketch showing a third embodiment with an IR temperature sensor with optics pointing at a heating point.
Figure 5 is a sketch showing a fourth embodiment with an IR temperature sensor provided with a light guide fiber whose free end is located near a heating point.
6 is a sketch showing a fourth embodiment with an IR temperature sensor coupled to the laser path by a beam splitting unit.
Figure 7 shows a sketch illustrating the interconnection of various components in the third, fourth and fifth embodiments of the present invention.

도 1 및 2는 본 발명의 제 1 실시예를 도시한다. 도 2는 본 발명의 제 1 실시예의 상세 단면도이다. 전자 부품 제거 툴(2)은 제거될 결함있는 μLED(4x) 위에 위치된다. 결함있는 μLED(4x) 및 복수의 다른 μLED(4)는 도 1에 도시된 바와 같이 매트릭스 배열로 회로 기판(6) 상의 접촉 영역(5) 상에 위치되어 예를 들어 솔더로 회로 기판(6)에 실장된다.1 and 2 show a first embodiment of the present invention. 2 is a detailed sectional view of a first embodiment of the present invention. The electronic component removal tool 2 is placed over the defective μLED 4x to be removed. The defective μLED 4x and a plurality of other μLEDs 4 are placed on the contact area 5 on the circuit board 6 in a matrix arrangement as shown in FIG. mounted on

제거 툴(2)은 제거될 μLED(4) 위에 위치할 흡입구(10)를 갖는 진공 흡입 노즐(8)을 포함한다. 또한 제거 툴(2)은 진공 흡입 노즐(8)의 중심을 통해 그리고 흡입구(10)를 통해 제거될 μLED(4x)로 가열 레이저 빔(12)을 지향시키는 레이저 빔 방출기(11)를 포함한다. 레이저 빔(12)으로부터의 열은 회로 기판(6)으로부터 μLED(4x)를 분리시키고 분리된 μLED(4x)는 진공 흡입 노즐(8) 내로 흡입되어 회로 기판(6)에서 제거된다. 제거 툴(2)의 위치, 진공 흡입 및 레이저 빔 방출기(11)의 제어는 제어 및 구동 장치(14)에 의해 달성된다. 레이저 빔(12)은 직경이 작고 초점을 맞출 수 있기 때문에 결함있는 μLED(4x)와 그 접촉 영역(5)만 가열할 수 있다. 이에 의해 이웃하는 μLED(4)에 대한 버닝 손상이 생략된다. 바람직하게는, 접촉 영역(5)에 접촉 패드가 제공되고, 상기 접촉 패드가 레이저 빔(12)에 의해 가열된다. 제거 공정 동안 제거 툴(2)은 x-y 평면으로만 위치결정되고, z 방향으로의 이동은 필요없다. 그로 인해 제거 속도가 증가한다.The removal tool 2 includes a vacuum suction nozzle 8 with a suction port 10 to be positioned over the μLED 4 to be removed. The removal tool 2 also includes a laser beam emitter 11 which directs a heating laser beam 12 through the center of the vacuum suction nozzle 8 and through the suction port 10 to the µLED 4x to be removed. The heat from laser beam 12 separates μLED 4x from circuit board 6 and the separated μLED 4x is sucked into vacuum suction nozzle 8 and removed from circuit board 6 . Control of the position of the removal tool 2, vacuum suction and laser beam emitter 11 is achieved by a control and drive device 14. Since the laser beam 12 is small in diameter and can be focused, it can only heat the defective μLED 4x and its contact area 5 . Burning damage to the neighboring µLEDs 4 is thereby omitted. Preferably, contact pads are provided in the contact area 5 , and the contact pads are heated by the laser beam 12 . During the removal process the removal tool 2 is positioned only in the x-y plane and no movement in the z direction is required. This increases the rate of removal.

도 3은 도 2와 같은 단면도이고 본 발명의 제 2 실시예를 도시한다. 도 3에 따른 제 2 실시예에서, 레이저 빔(12)은 진공 흡입 노즐(8) 외부에서 흡입구(10) 아래의 영역으로 안내된다. 이것은 레이저 빔 방출기(11)가 제거 툴(2)의 외부에 견고하게 장착되어 레이저 빔(12)이 흡입구(10) 아래의 영역을 향하게 함으로써 달성된다. 이에 의해 진공 흡입 노즐(8)의 위치결정은 그와 동시에 제거될 결함있는 μLED(4x) 상으로 레이저 빔(12)을 위치시킨다. 다른 모든 특징은 제 1 실시예의 특징과 동일하다.Figure 3 is the same cross-sectional view as Figure 2 and shows a second embodiment of the present invention. In the second embodiment according to FIG. 3 , the laser beam 12 is directed outside the vacuum suction nozzle 8 into the area below the suction port 10 . This is achieved by having the laser beam emitter 11 mounted rigidly to the outside of the removal tool 2 so as to direct the laser beam 12 into an area under the suction port 10 . The positioning of the vacuum suction nozzle 8 thereby simultaneously positions the laser beam 12 onto the defective μLED 4x to be removed. All other features are the same as those of the first embodiment.

도 4는 본 발명의 제 3 실시예를 도시한 스케치이다. 제 1 실시예의 특징에 추가하여, 결함있는 μLED(4x) 및 그 부근의 온도를 비접촉 측정하기 위한 IR 광학기(18)를 포함하는 IR 온도 센서(16)가 제공된다. 가열 단계 동안 결함있는 μLED(4x)의 온도를 측정함으로써 제거 공정 동안의 온도가 레이저 빔 방출기(11)에 의해 방출되는 열 에너지를 제어하여 제어 및 구동 장치(14)를 통해 제어될 수 있다.4 is a sketch showing a third embodiment of the present invention. In addition to the features of the first embodiment, an IR temperature sensor 16 is provided that includes IR optics 18 for non-contact measurement of the temperature of the defective μLED 4x and its vicinity. By measuring the temperature of the defective μLED 4x during the heating step, the temperature during the removal process can be controlled via the control and drive device 14 by controlling the thermal energy emitted by the laser beam emitter 11 .

도 5에 따른 제 4 실시예에서는, IR 광학기(18) 대신 모노필라멘트 광 섬유 가이드(20)가 IR 온도 센서(16)에 연결되고 광 섬유 가이드(20)의 자유 단부는 가열되는 μLED(4x)에 가깝게 위치된다.In the fourth embodiment according to FIG. 5 , instead of the IR optics 18 , a monofilament fiber guide 20 is connected to the IR temperature sensor 16 and the free end of the fiber guide 20 is a heated μLED (4x). ) is located close to

IR 온도 센서(16)에 의해 측정된 온도는 결함있는 μLED(4x)가 액체 솔더와 함께 회로 기판(6)에서 분리될 때 크게 변하는 것으로 밝혀졌다. 이러한 급격한 온도 변화는 가열 공정을 중지하기 위한 표시로서, 즉 밀리 초 내에서 레이저 빔(12)의 방출을 중지시켜 회로 기판(6) 또는 결함없는 μLED(4)의 연소를 방지하는 데 사용된다.The temperature measured by the IR temperature sensor 16 was found to change significantly when the defective μLED 4x was separated from the circuit board 6 along with the liquid solder. This rapid temperature change is used as an indication to stop the heating process, i.e. to stop the emission of the laser beam 12 within milliseconds to prevent burning of the circuit board 6 or flawless μLED 4.

온도는 바람직하게는 가열 지점, 즉 제거될 μLED(4x)에 접촉하지 않고 적절한 광학기(18)를 갖는 IR 센서(16)에 의해 측정된다. IR 센서(16)는 제거 툴(2)의 외부에 배치되고, IR 방사선은 도 3, 4 및 5에 도시된 바와 같이 제거 툴(2)의 외부에서 IR 센서로 안내되거나 또는 도 6에 도시된 바와 같이 빔 분할 유닛(25)을 사용하여 진공 흡입 노즐(8)의 내부로부터 레이저 빔(12) 밖으로 안내된다.The temperature is preferably measured by the IR sensor 16 with appropriate optics 18 without contacting the heating point, i.e. the μLED 4x to be removed. An IR sensor 16 is disposed outside the removal tool 2, and IR radiation is guided to the IR sensor outside the removal tool 2 as shown in FIGS. 3, 4 and 5 or as shown in FIG. 6. is guided out of the laser beam 12 from the inside of the vacuum suction nozzle 8 using the beam splitting unit 25 as shown in FIG.

도 6은 진공 흡입 노즐(8) 외부에서 광학기(18)를 사용하여 IR 방사선을 흡입구(10) 아래의 제거될 μLED(4x)로 향하게 하는 것 대신에 빔 분할 유닛(25)에 의해 레이저 경로에 결합된 IR 온도 센서를 갖는 제 4 실시예를 나타내는 스케치이다. 빔 스플리터 유닛(25)은 레이저 빔으로부터의 IR 방사선을 필터링하고 이를 적절한 광학기(18)를 써서 IR 온도 센서(16)로 반사시킨다.6 shows the laser path by the beam splitting unit 25 instead of using optics 18 outside the vacuum suction nozzle 8 to direct the IR radiation to the μLEDs 4x to be removed below the suction port 10 A sketch showing a fourth embodiment with an IR temperature sensor coupled to Beam splitter unit 25 filters the IR radiation from the laser beam and reflects it to IR temperature sensor 16 using suitable optics 18 .

도 7은 본 발명의 제 3, 제 4 및 제 5 실시예에서 다양한 구성 요소의 상호연결을 예시하는 스케치를 도시한다. 추가로, 도 7에는 제거될 가열된 μLED(4x)를 향해 프로세스 가스(24)를 향하게 하는 프로세스 가스 노즐(22)이 도시되어 있다. 프로세스 가스는 가열 단계 동안 액화된 솔더의 산화를 방지하는 데 도움이 되며 가열 단계 동안 가열 역학을 지원할 수 있다. 프로세스 가스의 적용은 마찬가지로 제어 및 구동 장치(14)에 의해 제어된다. 사용되는 프로세스 가스는 질소, 아르곤, 헬륨 또는 포미드(formid)-가스일 수 있다.Figure 7 shows a sketch illustrating the interconnection of various components in the third, fourth and fifth embodiments of the present invention. Additionally shown in FIG. 7 is a process gas nozzle 22 directing process gas 24 towards the heated μLED 4x to be removed. The process gas helps prevent oxidation of the liquefied solder during the heating step and can support the heating dynamics during the heating step. The application of the process gas is likewise controlled by the control and drive device 14 . The process gas used may be nitrogen, argon, helium or formid-gas.

μLED(4, 4x)는 일반적으로 회로 기판(6)에 납땜된다. 마찬가지로 접착제를 사용하여 μLED(4, 4x) 또는 다른 전자 부품을 회로 기판(6)에 실장할 수 있다.μLEDs (4, 4x) are typically soldered to the circuit board (6). Likewise, μLEDs 4, 4x or other electronic components can be mounted on the circuit board 6 using adhesive.

다양한 실시예가 결합될 수 있다. 상이한 온도 측정 장치들이 레이저 빔(12)을 제거될 μLED(4x)로 안내하는 상이한 방식들과 결합될 수있다. 마찬가지로, 프로세스 가스의 적용은 전술한 조합과 결합될 수 있다.Various embodiments can be combined. Different temperature measuring devices may be combined with different ways of directing the laser beam 12 to the µLED 4x to be ablated. Similarly, the application of process gases can be combined with any of the foregoing combinations.

2 제거 툴
4 μLED
4x 제거될 결함있는 μLED
5 접촉 영역
6 회로 기판
8 진공 흡입 노즐
10 흡입구
11 레이저 빔 방출기
12 레이저 빔
14 제어 및 구동 장치
16 IR 온도 센서
18 광학기
20 모노필라멘트 광섬유 가이드
22 프로세스 가스 노즐
24 프로세스 가스
25 빔 스플리터2 removal tool
4 μLEDs
4x defective μLEDs to be removed
5 contact area
6 circuit board
8 vacuum suction nozzles
10 intake
11 laser beam emitter
12 laser beams
14 Controls and drives
16 IR temperature sensor
18 optics
20 monofilament fiber guide
22 process gas nozzle
24 process gases
25 beam splitter

Claims (11)

접촉 영역(5)에서 회로 기판(6)에 연결된 전자 부품(4x)을 제거하는 방법으로서,
a) 제거될 전자 부품(4x) 및 그의 회로 기판(6)과의 접촉 영역(5)을 레이저 빔(12)으로 가열하는 단계, 및
b) 회로 기판(6)에서 전자 부품(4x)을 제거하는 단계를 포함하고,
단계 b)는 전자 부품(4x)을 향해 진공 흡입 노즐(8)을 위치시키고, 가열되어 분리되는 전자 부품(4x)을 진공 흡입 노즐(8) 내로 흡입하여 회로 기판(6)으로부터 전자 부품(4x)을 제거하는 것을 포함하는 방법에 있어서,
상기 방법은 가열하는 단계 a) 동안 온도를 제어하기 위해 단계 a) 동안 IR 온도 센서(16)를 이용하여 전자 부품(4x)의 온도를 측정하는 단계를 더 포함하고,
상기 IR 온도 센서(16)는 전자 부품(4x)의 온도를 측정하기 위하여, 진공 흡입 노즐(8) 내부의 레이저 빔(12)의 레이저 경로에 결합되고, 빔 분할 유닛(25)에 의해 필터링되어 IR 온도 센서(16)로 반사되는 레이저 빔(12)으로부터의 IR 방사선을 감지하는 것을 특징으로 하는 방법.A method for removing an electronic component (4x) connected to a circuit board (6) in a contact area (5), comprising:
a) heating the electronic component 4x to be removed and its contact area 5 with the circuit board 6 with a laser beam 12, and
b) removing the electronic component (4x) from the circuit board (6);
Step b) positions the vacuum suction nozzle 8 towards the electronic component 4x, sucks the heated and separated electronic component 4x into the vacuum suction nozzle 8, and removes the electronic component 4x from the circuit board 6. ) In the method comprising removing,
The method further comprises measuring the temperature of the electronic component (4x) using an IR temperature sensor (16) during step a) to control the temperature during step a) of heating,
The IR temperature sensor 16 is coupled to the laser path of the laser beam 12 inside the vacuum suction nozzle 8 and filtered by the beam splitting unit 25 to measure the temperature of the electronic component 4x. A method characterized by sensing IR radiation from a laser beam (12) reflected by an IR temperature sensor (16). 제 1 항에 있어서, 상기 진공 흡입 노즐(8)을 통해 레이저 빔(12)이 제거될 전자 부품(4x)으로 향하는, 방법.2. Method according to claim 1, wherein the laser beam (12) is directed through the vacuum suction nozzle (8) to the electronic component (4x) to be removed. 제 1 항에 있어서, 측정된 온도가 변할 때, 단계 a)에서의 가열이 중지되는, 방법.The method according to claim 1 , wherein the heating in step a) is stopped when the measured temperature changes. 제 1 항 내지 제 3 항 중 어느 한 항에 있어서, 상기 단계 a) 또는 상기 단계 a) 및 단계 b)에서 제거될 전자 부품(4x) 및 그 접촉 영역(5)은 프로세스 가스를 받는, 방법.4. Method according to any one of claims 1 to 3, wherein the electronic component (4x) to be removed in step a) or in steps a) and b) and its contact area (5) are subjected to a process gas. 제 1 항 내지 제 3 항 중 어느 한 항에 있어서, 상기 접촉 영역(5)에는 접촉 패드가 제공되고, 상기 접촉 패드는 레이저 빔(12)에 의해 가열되는, 방법.4. A method according to any one of claims 1 to 3, wherein the contact area (5) is provided with a contact pad, the contact pad being heated by means of a laser beam (12). 제 1 항 내지 제 3 항 중 어느 한 항에 있어서, 제거될 전자 부품(4x)은 회로 기판(8)에 납땜되어 있는, 방법.4. Method according to any one of claims 1 to 3, wherein the electronic component (4x) to be removed is soldered to the circuit board (8). 제 1 항 내지 제 3 항 중 어느 한 항에 있어서, 제거될 전자 부품은 LED 또는 μLED(4x)인, 방법.4. Method according to any one of claims 1 to 3, wherein the electronic component to be removed is an LED or μLED (4x). 레이저 빔 방출기(11), 회로 기판(6)에서 전자 부품(4x)을 제거하기 위한 수단(2), 및 레이저 빔(12)을 레이저 빔 방출기(11)에서 제거될 전자 부품(4x)으로 향하게 하여 이를 가열하고 그리고 제거 수단(2)을 제어하여 가열된 전자 부품(4x)을 회로 기판(6)에서 제거하기 위한 제어 및 구동 장치(14)를 포함하고, 상기 제거 수단(2)은 회로 기판(6)으로부터 상기 가열되어 분리되는 전자 부품(4x)을 진공 흡입 노즐(8) 내로 흡입하기 위해 상기 전자 부품(4x)보다 큰 흡입구(10)를 포함하는 진공 흡입 노즐(8)인, 제 1 항 내지 제 3 항 중 어느 한 항에 따른 방법을 수행하기 위한 장치에 있어서,
상기 방법을 수행하기 위한 장치는 제거되는 전자 부품(4x)의 온도를 측정하기 위한 IR 온도 센서(16)를 더 포함하고, 상기 IR 온도 센서(16)는 상기 제어 및 구동 장치(14)와 연결되며, 상기 IR 온도 센서(16)는 진공 흡입 노즐(8) 내부의 레이저 빔(12)의 레이저 경로에 결합되고,
상기 방법을 수행하기 위한 장치는 레이저 빔(12)으로부터의 IR 방사선을 필터링하고 IR 온도 센서(16)로 반사시키는 빔 분할 유닛(25)을 더 포함하는 것을 특징으로 하는 장치.Laser beam emitter 11, means 2 for removing the electronic component 4x from the circuit board 6, and directing the laser beam 12 from the laser beam emitter 11 towards the electronic component 4x to be removed. and a control and drive device (14) for heating it and controlling the removal means (2) to remove the heated electronic component (4x) from the circuit board (6), the removal means (2) comprising a circuit board 1, which is a vacuum suction nozzle (8) comprising a suction port (10) larger than the electronic component (4x) for sucking the heated and separated electronic component (4x) from (6) into the vacuum suction nozzle (8); An apparatus for performing the method according to any one of claims to 3, comprising:
The device for performing the method further comprises an IR temperature sensor 16 for measuring the temperature of the electronic component 4x to be removed, the IR temperature sensor 16 being connected to the control and drive device 14. The IR temperature sensor 16 is coupled to the laser path of the laser beam 12 inside the vacuum suction nozzle 8,
The apparatus for performing the method further comprises a beam splitting unit (25) for filtering the IR radiation from the laser beam (12) and reflecting it to an IR temperature sensor (16). 제 8 항에 있어서, 상기 레이저 빔 방출기(11)로부터의 레이저 빔(12)은 진공 흡입 노즐(8) 및 흡입구(10)를 통해 제거될 전자 부품(4x)으로 향하는, 장치 .9. The device according to claim 8, wherein the laser beam (12) from the laser beam emitter (11) is directed through a vacuum suction nozzle (8) and a suction port (10) to the electronic component (4x) to be removed. 제 8 항에 있어서, 상기 레이저 빔 방출기(11)는 진공 흡입 노즐(8)의 외부에 장착된, 장치.9. The device according to claim 8, wherein the laser beam emitter (11) is mounted outside the vacuum suction nozzle (8). 제 8 항에 있어서, 상기 제어 및 구동 장치(14)는 진공 흡입 노즐(8) 및 레이저 빔(12)을 일 평면에 위치시키도록 구성된, 장치.9. The device according to claim 8, wherein the control and drive device (14) is configured to position the vacuum suction nozzle (8) and the laser beam (12) in one plane.
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