KR20230058638A - Led 디바이스 및 led 디바이스를 제조하는 방법 - Google Patents

Led 디바이스 및 led 디바이스를 제조하는 방법 Download PDF

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Publication number
KR20230058638A
KR20230058638A KR1020237007769A KR20237007769A KR20230058638A KR 20230058638 A KR20230058638 A KR 20230058638A KR 1020237007769 A KR1020237007769 A KR 1020237007769A KR 20237007769 A KR20237007769 A KR 20237007769A KR 20230058638 A KR20230058638 A KR 20230058638A
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KR
South Korea
Prior art keywords
led
layer
region
porous
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237007769A
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English (en)
Korean (ko)
Inventor
통통 주
잉쥔 리우
무함마드 알리
Original Assignee
포로 테크놀로지스 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB2012103.4A external-priority patent/GB202012103D0/en
Priority claimed from GBGB2012108.3A external-priority patent/GB202012108D0/en
Priority claimed from GBGB2012098.6A external-priority patent/GB202012098D0/en
Priority claimed from GBGB2012105.9A external-priority patent/GB202012105D0/en
Priority claimed from GBGB2012110.9A external-priority patent/GB202012110D0/en
Priority claimed from GBGB2018016.2A external-priority patent/GB202018016D0/en
Priority claimed from PCT/GB2021/050158 external-priority patent/WO2021148813A1/en
Priority claimed from PCT/GB2021/050147 external-priority patent/WO2021148803A1/en
Priority claimed from GBGB2110882.4A external-priority patent/GB202110882D0/en
Application filed by 포로 테크놀로지스 리미티드 filed Critical 포로 테크놀로지스 리미티드
Publication of KR20230058638A publication Critical patent/KR20230058638A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H01L33/32—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H01L27/156—
    • H01L33/007—
    • H01L33/06—
    • H01L33/08—
    • H01L33/16—
    • H01L33/46—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/012—Manufacture or treatment of active-matrix LED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays

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  • Led Devices (AREA)
KR1020237007769A 2020-08-04 2021-08-04 Led 디바이스 및 led 디바이스를 제조하는 방법 Pending KR20230058638A (ko)

Applications Claiming Priority (21)

Application Number Priority Date Filing Date Title
GB2012103.4 2020-08-04
GBGB2012103.4A GB202012103D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012105.9 2020-08-04
GBGB2012108.3A GB202012108D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012098.6 2020-08-04
GB2012110.9 2020-08-04
GBGB2012098.6A GB202012098D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2012108.3 2020-08-04
GBGB2012105.9A GB202012105D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GBGB2012110.9A GB202012110D0 (en) 2020-08-04 2020-08-04 Semiconductor structure
GB2018016.2 2020-11-16
GBGB2018016.2A GB202018016D0 (en) 2020-11-16 2020-11-16 Red led and method of manufacture
PCT/GB2021/050158 WO2021148813A1 (en) 2020-01-22 2021-01-22 Semiconductor structure and method of manufacture
GBPCT/GB2021/050152 2021-01-22
GBPCT/GB2021/050147 2021-01-22
GBPCT/GB2021/050158 2021-01-22
PCT/GB2021/050152 WO2021148808A1 (en) 2020-01-22 2021-01-22 Red led and method of manufacture
PCT/GB2021/050147 WO2021148803A1 (en) 2020-01-22 2021-01-22 Micro-led and manufacturing method thereof
GBGB2110882.4A GB202110882D0 (en) 2020-08-04 2021-07-28 LED and method of manufacture
GB2110882.4 2021-07-28
PCT/GB2021/052020 WO2022029434A1 (en) 2020-08-04 2021-08-04 Led device and method of manufacturing an led device

Publications (1)

Publication Number Publication Date
KR20230058638A true KR20230058638A (ko) 2023-05-03

Family

ID=80120107

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237007769A Pending KR20230058638A (ko) 2020-08-04 2021-08-04 Led 디바이스 및 led 디바이스를 제조하는 방법

Country Status (7)

Country Link
US (2) US12563866B2 (cg-RX-API-DMAC7.html)
EP (2) EP4193392B1 (cg-RX-API-DMAC7.html)
JP (2) JP7844440B2 (cg-RX-API-DMAC7.html)
KR (1) KR20230058638A (cg-RX-API-DMAC7.html)
CN (1) CN116250091A (cg-RX-API-DMAC7.html)
TW (1) TWI905241B (cg-RX-API-DMAC7.html)
WO (1) WO2022029434A1 (cg-RX-API-DMAC7.html)

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GB202213149D0 (en) 2022-09-08 2022-10-26 Poro Tech Ltd Method of separating a semiconductor device from a substrate
GB202213939D0 (en) 2022-09-23 2022-11-09 Poro Tech Ltd Monolithic array of semiconductor devices, display device, template wafer and method of manufacture
GB202216889D0 (en) 2022-11-11 2022-12-28 Poro Tech Ltd Opto-electronic device and method of manufacturing
GB202218165D0 (en) 2022-12-02 2023-01-18 Poro Tech Ltd Opto-electronic device having an electrical interconnection layer

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Publication number Publication date
JP2023536361A (ja) 2023-08-24
EP4608102A3 (en) 2025-11-12
JP7844440B2 (ja) 2026-04-13
EP4193392A1 (en) 2023-06-14
CN116250091A (zh) 2023-06-09
TW202221938A (zh) 2022-06-01
US12563866B2 (en) 2026-02-24
JP2026113572A (ja) 2026-07-07
US20230290903A1 (en) 2023-09-14
US20260231564A1 (en) 2026-08-06
WO2022029434A1 (en) 2022-02-10
TWI905241B (zh) 2025-11-21
EP4608102A2 (en) 2025-08-27
EP4193392B1 (en) 2025-07-16

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