KR20230055728A - Substrate process device - Google Patents

Abstract

According to the present invention, a substrate processing device can comprise: a chamber where a deposition film forming process is performed on substrates; a shower head where gas outlets injecting process gas of the deposition film forming process to the substrate are arranged; a disk unit having a plurality of pockets units where the substrates are mounted during the deposition film forming process; and purge units discharging the process gas performing the deposition film forming process on the substrates from the chamber. The pocket units can be arranged at a constant angle on the disk unit based on the center of the disk unit, and the purge units can be arranged between gaps between the plurality of substrates. Moreover, the number of the purge units can be same with or less than the number of the substrates.

Description

Substrate processing device {SUBSTRATE PROCESS DEVICE}

The present invention relates to a substrate processing apparatus having improved performance. Specifically, the present invention relates to a large-area substrate processing apparatus capable of improving productivity and process performance.

Recently, as interest in high-performance semiconductor devices, solar cells, displays, etc. has increased, research on these and manufacturing devices has been actively conducted. In general, a substrate treatment process for forming various layers such as a conductive layer and an insulating layer on a substrate, wafer, or glass is required to manufacture semiconductor devices and solar cells.

There are various methods such as physical vapor deposition (PVD) and chemical vapor deposition (CVD) for the substrate processing process, and recent research on atomic layer deposition (ALD) is being actively conducted to manufacture high-performance and high-efficiency products. .

The atomic layer deposition method is a deposition method for forming a film by stacking atomic layers one by one on a substrate or wafer, and includes ALD and PEALD using plasma. In addition, the atomic layer deposition method can be divided into a time division method for separating reaction gases according to time and a space division method for separating reaction gases according to space.

Space division type ALD may generally include a plurality of regions divided into a deposition region, a purge region, and the like. In the above-described ALD, a substrate or wafer disposed on a disk may sequentially move through the plurality of regions by rotation of the disk, and during this process, a set material may be deposited on the substrate or wafer.

In addition, the time-division type ALD may include a gas supply process, a purge process, and the like, which are performed in a chamber for a predetermined time. For example, in the ALD of the above method, a process of supplying a source gas, a reaction gas, etc. into the chamber, a process of purging the gas, etc. proceeds in a set order, and in this process, a material set on a substrate or wafer is applied to a set thickness. can be deposited with

However, when the substrate processing apparatus is of a space division type, there is a problem in that particles are generated on a rotating shaft of the disk due to rotation when the disk rotates. Such particles are provided to a substrate or wafer disposed on a disk, and as a result, there is a problem in that deposition quality is deteriorated. In addition, when the device is time-division type, it requires a lot of processing time compared to space-division type, resulting in low productivity, and as a result, there is a problem in that process efficiency is lowered when a single chamber is applied.

Therefore, a new substrate processing apparatus capable of solving the above problems is required.

An object of the present invention is to provide a substrate processing apparatus having improved deposition quality.

In addition, the present invention is to provide a substrate processing apparatus capable of improving process efficiency.

A substrate processing apparatus of the present invention includes a chamber in which a deposition film formation process is performed on a substrate, a shower head in which a gas discharge port for spraying process gas of the deposition film formation process to the substrate is disposed, and a plurality of pockets in which the substrate is seated during the deposition film formation process. It may include a disk unit disposed on the substrate, and a purge unit through which a process gas obtained by performing the deposition film forming process on the substrate is discharged from the chamber.

The pocket portion may be arranged on the disk unit at an equal angle with respect to the center of the disk unit, and the purge unit may be disposed in a region between the plurality of substrates.

Also, the number of purge parts may be equal to or less than the number of substrates.

In the space-division ALD method substrate process, the disk unit rotates at high speed during the process to prevent splitting particles from occurring, and to improve the yield of the time-division ALD method substrate process, which processes one substrate at a time. can

According to the present invention, a plurality of pockets in which a substrate can be seated may be provided in a disk unit while processing a substrate in a time-division ALD method.

During the substrate processing process, the plurality of pocket units may rotate to improve the uniformity of a film deposited on the substrate, but the disk unit may not rotate during the substrate processing process.

That is, only the pocket portion rotates during the process, and the disk portion may rotate before or after the process. The disc unit rotates before or after revolution to adjust the position between the gas outlet of the shower head and the substrate, and through this, uniform and predictable results can be obtained for each repeated process.

1 is a schematic diagram of a substrate processing apparatus of the present invention.
2 is a schematic diagram of a substrate processing apparatus including a purge unit according to the present invention.
3 is a schematic plan view of a disk unit and a purge unit according to an embodiment of the present invention.
4 is another embodiment of FIG. 3 .
5 is a perspective view of a shower head and a disk unit according to the present invention.
6 is a plan view of an embodiment of a shower head of the present invention.
7 is a plan view of another embodiment of the shower head of the present invention.
8 is a plan view of another embodiment of the shower head of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical idea of the present invention is not limited to some of the described embodiments and can be implemented in various forms, and within the scope of the technical idea of the present invention, at least one or more of the components among the embodiments is selectively combined and/or substituted. can do.

In addition, the terms of the embodiments of the present invention can be interpreted as meanings that can be generally understood by those skilled in the art unless specifically defined, and generally used terms are given in consideration of the contextual meaning of the related art. can be interpreted

In addition, the terms of the embodiments of the present invention are for description of the embodiments and do not limit the present invention, and singular numbers may be interpreted as plural unless otherwise specified in the phrase.

In addition, terms such as first, second, third, or A, B, C may be used in the components of the embodiment of the present invention, and these terms are intended to distinguish one component from other components. It does not limit the order or sequence.

In addition, in the embodiment of the present invention, one component is described as “connected”, “connected”, “coupled”, etc. with another component, one component is directly connected to another component, It may mean not only connected or coupled, but also indirectly connected, connected, or coupled by another component between two components.

In addition, in the embodiment of the present invention, the arrangement, formation, and positioning of one component above or below, above or below another component means that one component is directly or indirectly placed, formed, or placed on another component. may include positioning. Expressions of up or down, up or down may mean not only an upward direction but also a downward direction with respect to one component.

Hereinafter, an embodiment will be described with reference to the drawings.

When forming a deposition film on the substrate 50, an atomic layer deposition (ALD) technique or a plasma enhanced atomic layer deposition (PEALD) technique may be used.

ALD or PEALD can be classified into a time-division ALD method and a space-division ALD method. Compared to the time division ALD method, the space division ALD method can easily process a large area and can have a high production yield. Particle generation may occur. Accordingly, the present invention processes the substrate 50 using the time-division ALD method, and the plurality of substrates 50 can be seated on the disk unit 100 during the process, so that the plurality of substrates 50 can be processed simultaneously. .

1 is a schematic diagram of a substrate processing apparatus 1 of the present invention.

Referring to FIG. 1 , a substrate processing apparatus 1 of the present invention may include a disk unit 100 and a pocket unit 200 .

The substrate processing apparatus of the present invention includes a chamber 60, a disk unit 100 installed on the bottom surface of the chamber 60 to support at least one substrate 50, and a chamber lid covering the top of the chamber 60. Lid; not shown).

The chamber 60 may perform a process of processing the substrate 50 using plasma or the like. For example, the chamber 60 may provide a reaction space for an ALD process. At this time, it is installed in the chamber lid (not shown) to supply source gas (SG), reactive gas (RG) or purge gas (PG) to the substrate 50 on the disk unit 100. A shower head 300 spraying may be included in the substrate processing apparatus 1 . Of course, the chamber 60 may also be applied to substrate 50 processing methods other than ALD, CVD, and etching.

The disk unit 100 may be fixed with respect to the chamber 60 or rotatably installed on the inner bottom surface of the chamber 60 .

In order to uniformly process the substrate 50 such as cleaning, deposition, and etching, each substrate 50 needs to be uniformly heated to an appropriate temperature. To heat the substrate 50 , the disk unit 100 may be disposed in a chamber 60 equipped with a heating means 30 such as a heater.

The disk unit 100 may be disposed within the chamber 60 . An accommodation space in which a substrate 50 corresponding to an object to be processed may be accommodated may be provided in the chamber 60 .

Processing of the substrate 50 , such as a thin film deposition process of the substrate 50 , a cleaning process of the substrate 50 , and an etching process of the substrate 50 , may be performed in the chamber 60 .

In the case of a thin film deposition process, a chemical vapor deposition method (CVD), a physical vapor deposition (PVD) method, and the like are applied, and both require thin film raw materials such as a reaction gas and a source gas.

A process gas for forming a deposition film on the substrate 50 may include a source gas, a reaction gas, or a purge gas. The deposition layer may be formed by a chemical substitution reaction of the source gas and the reaction gas, and a purge gas supplying step may be added between the repetitive supplying of the source gas and the reaction gas. Each of the process gases may be supplied into the chamber 60 according to the lapse of time in a predetermined order.

Looking at the deposition film formation process by the substrate processing apparatus 1 of the present invention, a source gas and a reactive gas that chemically reacts with the source gas may be prepared for atomic film deposition. A desired atomic layer may be formed by a chemical reaction between the source gas and the reaction gas, and a purge gas may be prepared to remove remaining components from the chamber 60 after the reaction.

A source gas from the substrate processing apparatus 1 may be introduced into the chamber 60 , and the source gas may be deposited on the substrate 50 in one layer. In order to prevent unnecessary deposition of the source gas on the substrate 50 , a purge gas may be introduced into the chamber 60 after a predetermined time has elapsed. Since the chemical reaction level of the purge gas with the source gas or the reaction gas is low, the purge gas may be prepared with a chemical species having low reactivity with the chemical species of the source gas or the reaction gas.

After the concentration of the source gas in the chamber 60 is lowered by introducing the purge gas, the reaction gas may be introduced into the chamber 60 . The injected reaction gas may chemically react with the deposition components of the source gas deposited on the substrate 50 . An atomic film of the source gas may be replaced with a component generated by a chemical reaction between the source gas and the reaction gas. The newly substituted film component may be a target component to be deposited on the substrate 50 . When the target film is deposited, components used in the remaining reactions may be exhausted from the chamber 60 by a purge gas.

The above process may be one cycle of forming a target atomic deposition film. In this way, one atomic deposition film layer can be deposited per cycle, and the thickness of the deposition film can be adjusted to a desired thickness by the user. By repeating the above cycle, the thickness of the deposited film can be increased.

The purge gas may be supplied throughout one cycle, temporarily stopped while the source gas is introduced, temporarily stopped while the reactive gas is introduced, injected right after the source gas is introduced, or immediately after the reactive gas is introduced.

In the substrate processing apparatus 1 of the present invention, each process gas may be supplied to the chamber in order according to the lapse of time like in the time division type ALD, but the pocket part 200 in which the substrate 50 is seated during the process, and The structure of the disk unit 100 may be the same as that of the space division type ALD. In detail, unlike the general space division ALD method in which both the disk unit 100 and the pocket unit 200 rotate during the substrate processing process, the substrate processing apparatus 1 of the present invention only rotates the pocket unit 200 during the substrate processing process. It rotates and the disk unit 100 may not rotate. The disk unit 100 may rotate to align the transferred substrate 50 for the process before or after the start of the process.

The substrate processing apparatus 1 of the present invention may use the pocket portion 200 to process a plurality of substrates 50 together. The pocket unit 200 may be installed on one surface of the disk unit 100 and formed in a plate shape on which the substrate 50 is seated. A seating surface 220 on which the substrate 50 is seated may be formed on one surface of the pocket portion 200 facing the substrate 50 . The seating surface 220 may be formed in the same shape as the seating portion of the substrate 50 to prevent damage to the substrate 50 and ensure processing of the substrate 50 such as deposition.

One or more pocket units 200 may be installed in the disk unit 100 .

In order to process a plurality of substrates 50 together, the center of the plurality of pockets 200 formed in the disk unit 100 may be different from the center of the chamber 60 in plan view. Therefore, one side of the pocket portion 200 and the substrate 50 seated on the pocket portion 200 may be disposed adjacent to the center of the chamber 60, and the other side may be disposed adjacent to the edge of the chamber 60. can At this time, the first rotating unit may be used to prevent non-uniform processing of the substrate 50 .

The substrate processing apparatus 1 may include a first rotation unit and a second rotation unit capable of rotating the pocket unit 200 .

The first rotation unit may first rotate (A) the pocket unit 200 . At this time, the pocket portion 200 may be formed in a circular shape on a plane to be suitable for the first rotation.

The first rotation of the pocket part 200 is rotation of the pocket part 200 with the center of the pocket part 200 as the center of rotation on a plane, and will be referred to as rotation of the pocket part 200 hereinafter. The first rotation of the pocket part 200 may be rotation of the pocket part 200 by 360 degrees or more with respect to the chamber 60 .

The second rotation unit may perform a second rotation (B) of the pocket unit 200 . In contrast to the rotation of the pocket unit 200, the second rotation of the pocket unit 200 may be rotation of the pocket unit 200 around a virtual axis of rotation provided outside the pocket unit 200 as a rotation center. At this time, the virtual axis of rotation is preferably provided at the center of the chamber 60 or the center of the disk unit 100 . In this case, the second rotation of the pocket unit 200 may be referred to as revolution around a virtual axis of rotation.

For example, the second rotating unit may rotate the disk unit 100 in which the plurality of pocket units 200 are installed with the center of the disk unit 100 as the center of rotation in order to revolve the pocket unit 200 .

According to the rotation of the pocket part 200, since the area on one side of the substrate 50 seated on the pocket part 200 toward the center of the chamber 60 is not fixed and is constantly changing, the entire area of the substrate 50 is uniform. can be processed appropriately. For example, according to the first rotating unit, a thin film having a uniform thickness may be deposited on both one side and the other side of the substrate 50, and the thin film may be deposited with a constant thickness regardless of regions of the substrate 50. In the case of cleaning or etching, the entire area of the substrate 50 may be cleaned or etched to a uniform depth.

A first motor for rotating the pocket part 200 and a link means for transmitting rotational power of the first motor to the pocket part 200 between the first motor and the pocket part 200 may be provided in the first rotation part. .

For example, the link means may include a pocket gear 14 connected to the pocket unit 200, a main gear 12 linked to the pocket gear 14, and a first motor rotating the main gear 12. When the main gear 12 rotates together with the first rotational shaft 10, the first motor may rotate the first rotational shaft 10. In order to improve processing uniformity of the single substrate 50 , the first rotation shaft 10 is preferably formed at the center of the pocket portion 200 .

When the first motor rotates, the first rotation shaft 10 connected to the motor shaft of the first motor may rotate. The rotation of the first rotation shaft 10 causes the main gear 12 to rotate and the pocket gear 14 linked to the main gear 12 to rotate. When the pocket gear 14 rotates, the pocket part 200 can rotate (first rotation).

When the motor shaft of the first motor rotates, regardless of whether the disk unit 100 rotates, the first rotation shaft 10 connected to the motor shaft of the first motor rotates and the pocket unit 200 rotates the disk unit 100. can rotate about

A lift unit 400 for lifting the substrate 50 may be disposed in the center of the pocket unit 200 . The substrate 50 may be spaced apart from the seating surface 220 of the pocket portion 200 when the lift unit 400 ascends, and may be seated on the seating surface 220 when the lift unit 400 descends.

A thin film may be deposited on the substrate 50 seated on the bottom surface of the seating surface 220, and at this time, a portion of the thin film may also be deposited on the edge of the pocket portion 200 having a larger diameter than the substrate 50. According to this, the substrate 50 and the pocket portion 200 may be partially adhered by the thin film, and the adhesion may be separated by the lift portion 400 . At this time, the substrate 50 is easily damaged by the pressure of the lift unit 400 applied to break the adhesion. In addition, a phenomenon in which the substrate 50 is tilted and separated from the lift unit 400 may occur in the process of peeling off the adhesive through the elevation of the lift unit 400 .

In order to prevent damage to the substrate 50, the lift unit 400 of the present invention may have a special structure.

The lift part 400 may include a support part 410 extending parallel to the bottom surface of the seating surface 220 of the pocket part 200 so that the pressure applied to the substrate 50 by the process of peeling off the adhesive is dispersed. can Since the support part 410 is in surface contact with the substrate 50, the pressure applied to the substrate 50 can be evenly distributed, and a tilting phenomenon of the substrate 50 can be surely prevented during the lifting process.

In order to protect the substrate 50, it is preferable that the support part 410 is always parallel to the bottom surface of the seating surface 220 of the pocket part 200. The lift part 400 may include a shaft part 420 extending downward from the center of the support part 410 so that the support part 410 is parallel to the bottom surface of the seating surface 220 . An extension direction of the shaft part 420 may be the same as an elevation direction of the support part 410 . The shaft part 420 may be installed through the through hole 230 formed in the disk part 100 . In this case, the through hole 230 may extend from the upper surface to the lower surface of the disk unit 100 .

A side surface of the lift unit 400 may be formed in a 'T' shape by the support unit 410 and the shaft unit 420 . At this time, the shaft portion 420 may ascend or descend while sliding in the through hole 230 of the disk portion 100 . The shaft part 420 guided through the through hole 230 is prevented from being inclined differently in the lifting direction, and the support part 410 connected to the shaft part 420 is also always on the bottom surface of the seating surface 220 of the pocket part 200. equilibrium can be maintained. The pocket part 200 may include a lift groove 430 into which the support part 410 can be inserted when the support part 410 is lowered. When the support part 410 is inserted into the lift groove 430, the support part 410 and the seating surface 220 may form a flat plane.

A lift driving unit 440 that pushes the shaft unit 420 up or pulls it down may be disposed in the chamber 60 .

The first rotating unit may be disposed to face the lower surface of the disk unit 100 . At this time, when the disk unit 100 or the pocket unit 200 moves, the lift driving unit 440 may maintain a lowered state to escape from the first rotating unit. At this time, the lift unit 400 may be in a state of descending due to its own weight. The lift driving unit 440 rises when the disk unit 100 and the pocket unit 200 are stopped, and can physically push up the shaft unit 420 of the lift unit 400 exposed on the underside of the disk unit 100. .

The substrate processing apparatus 1 may include a heating means 30 . The heating means 30 is installed in the chamber 60 and can heat the substrate 50 to a set temperature. At this time, the set temperature may be determined as a temperature at which processing of the substrate 50 such as thin film deposition is smoothly performed. The heating unit 30 may be installed between the disk unit 100 and the lower surface of the chamber 60 . When the pocket unit 200 is installed on one side of the disk unit 100, the heating unit 30 may include a heater installed on the other side of the disk unit 100 within the chamber 60.

The pocket unit 200 may serve to receive heat from the heating means 30 installed below the disk unit 100 and transfer it to the substrate 50 .

2 is a schematic diagram of a substrate processing apparatus 1 including a purge unit 500 of the present invention.

Referring to FIG. 2 , the substrate processing apparatus 1 may include a purge unit 500 through which process gas is discharged from the chamber 60 . The purge unit 500 may be disposed on a side surface of the chamber 60 , and the purge unit 500 may be disposed to face an outer circumferential portion of the disk unit 100 .

Corresponding to the plurality of pocket parts 200, a plurality of purge parts 500 may also be disposed. 3 is a plan view of the pocket unit 200 and the disk unit 100, and six pocket units 200 may be disposed. 4(a) may be a plan view of a state in which two pocket parts 200 are disposed, and FIG. 4(b) may be a plan view of a state in which three pocket parts 200 are disposed.

Referring to FIGS. 3 and 4 , the purge unit 500 may be disposed outside the disk unit 100 in the space between the substrates 50, and the number of the purge units 500 may depend on the number of substrates 50 disposed on the disc. may be less than or equal to the number of That is, since one substrate 50 is seated in one pocket part 200, the purge part 500 can be disposed in any one of the spaces between the respective substrates 50, and the number of purge parts 500 is The number of substrates 50 or the number of pocket parts 200 may be the same as or less than that. As described above, when a plurality of substrates 50 are included in the time-division ALD process, a plurality of purge units 500 through which process gases can be discharged corresponding to the plurality of substrates 50 are also disposed, so that the substrates 50 ) can increase the uniformity of the deposited film deposited on. The space between the substrates 50 refers to a space in which the purge part 500 is disposed outside the disk unit 100 and does not overlap with the substrate 50 when viewed in a radial direction with respect to the center of the disk unit 100. It can mean an area that is not. Since the substrate 50 or the pocket portion 200 rotates during the process, the process gas that has completed the process for the substrate 50 flows into the space between the substrates 50, thereby preventing a vortex phenomenon. Therefore, since the purge unit 500 is disposed in the space between the substrates 50 , the process gas that has completed the process may be induced to flow into the space between the substrates 50 .

For example, when two substrates 50 are disposed on the disk 100, the pocket portions 200 may be disposed facing each other based on the center of the disk portion 100. In this case, at least one purge unit 500 may be disposed in a region between the two substrates 50 . In the case where two purge units 500 are also disposed, it may be preferable that one purge unit 500 be disposed symmetrically with respect to the center of the disk unit in a region between the two substrates 50 .

For example, when three substrates 50 are disposed on the disk 100, a virtual equilateral triangle connecting the center of the pocket portion 200 or the substrate 50 may be formed. In this case, the purge unit 500 may be disposed between at least one of the first substrate and the second substrate, between the second substrate and the third substrate, and between the third substrate and the first substrate, one between each substrate in total. It may be preferable to arrange three purge parts 500 .

When the number of purge units 500 is even and odd, when the number of substrates 50 is even n, m number of purge units 500 may be disposed. A minimum of n/2 purging units 500 may be required, and preferably, the number (n) of substrates 50 may be equal to the number (m) of purging units 500 . Also, an even number of purge units 500 may be symmetrically disposed on a plane formed by the purge units 500 . For example, when six pocket parts 200 are prepared and three purge parts 500 are disposed, the three purge parts 500 may form an equilateral triangle at an angle of 180 degrees to each other. In this way, the purge part 500 can be properly disposed along the outer side of the disk part 100 according to a predetermined design. Due to the symmetrical arrangement of the purge unit 500 , the process gas that has undergone the substrate process can symmetrically flow into the purge unit 500 without uneven stagnation in the chamber 60 . The symmetrically disposed purge parts 500 may be respectively disposed between the substrates 50, and thus, a deposition film formed on the substrates 50 may be uniform.

In addition, when the number of substrates 50 is odd n, the number of purge units 500 may be at least (n+1)/2 or (n−1)/2, and preferably the number of substrates 50 (n) may be arranged the same as the number (m) of the purge units 500 . Similar to the case where the number of substrates 50 is even, even when the number of substrates 50 is odd, the purge unit 500 may be arranged so that the process gas can be discharged to the purge unit 500 as symmetrically as possible in terms of a given design. .

A gas supply source (not shown) provided outside the chamber 60 may supply process gas into the chamber 60 along a gas supply pipe, and the process gas supplied to the chamber 60 may pass through the shower head 300 to the substrate. 50 or the substrate 50 may be supplied to the disk unit 100 on which it is seated.

5 is a perspective view of the shower head 300 and the disk unit 100.

Referring to FIGS. 3 and 5 , the pocket portions 200 may be arranged at an equal angle with respect to the center of the disk portion 100 for uniformity of the deposited film. An equal angle of the pocket portion 200 or the substrate 50 may be referred to as a first angle θ1. For example, when six substrates 50 are seated on the disk unit 100, the first angle θ1 may be 60 degrees, and when n substrates 50 are seated on the disk unit 100, the first angle θ1 may be 60 degrees. One angle θ1 may be 360/n degrees.

During the process including the formation of the deposition film, the substrate 50 may be rotated based on the center of each pocket portion 200 or each substrate 50 while being seated on the pocket portion 200 . The central axis around which the pocket portion 200 or the substrate 50 rotates may be referred to as the first rotational axis R1, and the plurality of substrates 50 all have the same angular velocity around the first rotational axis R1 for uniformity of the deposition film. can be rotated with

However, when the sizes of the substrates 50 are different or the substrates 50 are arranged in a non-equilateral manner, each of the plurality of substrates 50 is centered around the first rotational axis R1. Rotating angular velocity may be set differently.

The disk unit 100 may rotate based on the center 110 of the disk unit, and the central axis around which the disk unit 100 rotates may be referred to as the second rotation axis R2. The disk unit 100 may not rotate during a process of forming a deposition film, and may rotate before or after a process in which a process gas is supplied to form a deposition film.

When the substrate 50 is transported to be seated in the pocket portion 200 before the deposition film process, the shower head 300 and the disk portion 100 may face each other vertically. Immediately after the substrate 50 is transferred, the arrangement direction of the shower head 300 or the gas outlet 320 and the arrangement direction of the plurality of substrates 50 may be different from the target arrangement direction. In this case, the disk unit 100 may rotate about the second rotational axis R2 and be arranged at a preset position.

Therefore, the pocket part 200 may rotate and the disk part 100 may not rotate during the process of spraying the process gas. Before or after the process, the disk unit 100 may rotate. That is, since the rotation of the disk unit 100 during the process can easily generate particles due to the high centrifugal force due to the size of the large disk, the disk unit 100 does not rotate during the process, but the disk unit 100 is used to form a uniform deposition film. ), the disk unit 100 having a relatively small angular velocity can rotate during the process.

Referring to FIGS. 3 to 5 , the pocket unit 200 may include an indicator 210 for alignment before or after processing. The substrate 50 may be aligned toward the reference point 110 disposed on the disk unit 100 based on the indicating unit 210 . The reference point 110 may be the center of the disk unit 100 . For example, when the indicator 210 has a straight line shape including an arrow, the direction of the indicator 210 may be aligned toward the reference point 110 , which is the center of the disk unit 100 . Therefore, by aligning the indicator 210 and the reference point 110, the process start positions of the substrates 50 can be matched during each process, and thus the plurality of substrates 50 can produce the same process performance. there is. In detail, when a plurality of pocket portions 200 are arranged at equal angles along the outer circumference of the disk portion 100, it is assumed that a virtual line connecting the center of the pocket portion 200 and the reference point 110, which is the center of the disk portion 100, is assumed. It can be done, and the indicator 210 can be parallel to or overlapped with the virtual line. Before the start of each process, the indicator 210 may be arranged in parallel or in line with the reference point 110, and after completion of each process, before the start of the next process, the indicator 210 is arranged in parallel or in line with the reference point 110. It can be. Each of the above processes may be one process of an ALD or PEALD process. That is, each of the above processes includes a process of supplying a source gas to the chamber 60, a process of supplying a reaction gas to the chamber 60, and a process of supplying a purge gas for purging the source gas or reaction gas before a subsequent process. can do.

Therefore, the process of the substrate 50 can be started at the same starting position before any one of the ALD or PEALD process is started by the indicator 210 and the reference point 110, so that a deposited film with improved uniformity can be formed.

6 to 8 may show an embodiment of the shower head 300 of the present invention.

The shower head 300 may include a gas discharge port 320 through which process gas supplied to the chamber 60 may be sprayed toward the substrate 50 . Factors for improving the uniformity of the deposited film include the shape of the shower head 300, the distribution of the gas outlets 320, the size of the holes of the gas outlets 320, the spraying direction of the gas outlets 320, and the number of substrates 50. At least one of the arrangements may be included. That is, the arrangement, size, and shape of the gas outlets 320 may be designed in various ways according to optimization of the uniformity of the deposited film.

For example, the shower head may be designed to have the same size as the disk unit 100, and when the disk unit 100 has a circular shape, the shower head may also have the same circular shape. When the gas outlet 320 is arranged at the same height, the surface of the shower head and the disk unit 100 may be parallel, and the process gas injection direction of the gas outlet 320 may be vertically downward.

Hereinafter, exemplary embodiments of the shower head are disclosed.

Referring to FIG. 6 , a plurality of substrates 50 may be seated at an equal angle with respect to the center of the circular disk unit 100, and a shower head aims to form a uniform deposition film on the plurality of substrates 50. Alternatively, the gas outlet 320 may be designed. The number, size, or shape of the gas outlets 320 may determine the flow rate and flow rate of the process gas injected through the gas outlets 320 .

Since each substrate 50 arranged at an equal angle rotates with respect to the center of each substrate 50 during the process, the gas outlets 320 can be arranged in a line across the center of the shower head, which minimizes the amount of gas. The arrangement of the discharge ports 320 may be an arrangement that obtains an optimized process gas ejection effect.

A line arrangement of the gas outlets 320 may be referred to as a set of outlets S, and each outlet set S may pass through the center of the shower head. An angle between adjacent discharge port sets S may be referred to as a second angle θ2, and when the substrates 50 are arranged at equal angles, the second angles θ2 may also all be the same. When the number of outlet sets S is 4, the second angle θ2 may be 45 degrees, and when the number of outlet sets S is n, the second angle θ2 may be 360/2n degrees.

According to the above arrangement, if the sizes of the gas outlets 320 are all the same, the amount of process gas injected from the shower head 300 may be higher at the center of the shower head 300 than at the outer portion of the shower head.

When the process gas injection is concentrated in the center of the shower head 300, the process gas injected to the center of the disk unit may spread evenly to the outer periphery of the disk unit in a radial direction based on the center of the disk unit. While the process gas concentrated in the center of the disk part spreads, it may first reach a part having a small radius of the arrayed substrates. However, since the pocket part rotates during the deposition film forming process, the process gas can spread evenly over the substrate.

In order to control the amount of process gas sprayed from the shower head, a discharge port unit area A, which is a reference area, may be set. The outlet unit area A may be an area between the first boundary line D1 and the second boundary line D2 having the first boundary line D1 and the second boundary line D2 as the boundary line. For example, the first boundary line D1 and the second boundary line D2 may be concentric circles having different radii.

An area ratio of the gas outlet 320 to the area of the outlet unit area A may be referred to as a discharge ratio. For example, when the gas outlets 320 are all the same in size, have an area of S, and have n in a unit area of discharge, the discharge ratio may be nS/unit area of discharge. When the radius of the first boundary line D1 is r1 and the radius of the second boundary line D2 is r2, the discharge ratio may be nS/π (r1 ² -r2 ² ).

A method of adjusting the discharge ratio for equal injection of the process gas may include a method of adding the number of gas outlets 320 or a method of adjusting the size of the gas outlets 320 .

Referring to FIG. 7 , the outlet unit area A may include a first outlet unit area A and a second outlet unit area A having different radii. The discharge ratio may be referred to as a first discharge ratio, and the discharge ratio of the second unit region may be referred to as a second discharge ratio.

If the radius of the first outlet unit area A is smaller than the radius of the second outlet unit area A and all gas outlets 320 have the same size, the first discharge ratio may be greater than the second discharge ratio. That is, the higher discharge ratio may mean that the amount of process gas injected from the unit area A of the discharge port is larger.

When the size of each gas outlet 320 is the same, the discharge ratio may be increased by adding a gas discharge port to the discharge port unit area A having a small discharge rate.

In addition, the size of each gas outlet 320 may be set differently in order to adjust the discharge ratio. For example, the size of the gas outlet 320 may gradually decrease as the outlet set S moves toward the center of the shower head. In this case, the outlet unit area A adjacent to the center of the shower head 300 is discharged. The ratio may be smaller, and the amount of process gas injected may be reduced.

Referring to FIG. 8 , in another embodiment, a substrate 50 may be set to be positioned below each discharge port set S to form a uniform deposition film. Before the deposition process starts, the indicator 210 provided on the substrate may face the center of the disk unit, which is the reference point 110, and the outlet set S and the indicator may be vertically arranged in parallel. This can be set by adjusting the arrangement of the indicating unit 210 by rotating the disk unit 100 or rotating the substrate 50 .

For example, when three discharge port sets S are provided and six substrates 50 are provided, both the first angle θ1 and the second angle θ2 may be 60 degrees. That is, when n discharge port sets S are provided and 2n substrates 50 are provided at equal angles, the first angle θ1 and the second angle θ2 may be 360/2n degrees.

Therefore, by adjusting the arrangement or number of the gas outlets 320 of the various shower heads 300 as described above, the amount or speed of the process gas sprayed from the shower head 300 to the substrate 50 can be adjusted. Due to this, the deposited film can be set to a target thickness, and the uniformity of the deposited film can be improved.

Features, structures, effects, etc. described in the embodiments above are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. In addition, the features, structures, effects, etc. of each embodiment can be combined or modified with respect to other embodiments by a person skilled in the art to which the embodiments belong. Therefore, contents related to these combinations and variations should be construed as being included in the scope of the present invention.

In addition, although the above has been described focusing on the embodiments, this is only an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention belongs will exemplify the above to the extent that does not deviate from the essential characteristics of the present embodiment. It will be seen that various variations and applications that have not been made are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the present invention as defined in the appended claims.

One… Substrate processing device
10... first rotation shaft 12... main gear
14 ... pocket gear 20 ... second rotating shaft
30... Heating means 50... Substrate
60... chamber 100... disk part
110... reference point 200... pocket part
210... directing part 220... seating surface
230... through hole 300... shower head
320 ... gas outlet 400 ... lift part
410 ... support portion 420 ... shaft portion
430 ... lift home 440 ... lift drive unit
500... purge part
A... 1st turn B... 2nd turn
θ1... first angle θ2... second angle
R1... 1st axis of rotation R2... 2nd axis of rotation
D1... 1st boundary line D2... 2nd boundary line
A... outlet unit area S... outlet set

Claims (9)

a chamber in which a deposition film formation process is performed on a substrate;
a shower head having a gas discharge port for spraying the process gas of the deposition film forming process onto the substrate;
a disk unit in which a plurality of pocket units are disposed on which the substrate is seated during the deposition film forming process;
a purge unit through which a process gas obtained by performing the deposition film forming process on the substrate is discharged from the chamber; including,
The pocket portion is arranged at an equal angle on the disk portion based on the center of the disk portion,
The purge part is disposed in a region between the plurality of substrates,
The substrate processing apparatus wherein the number of purge parts is equal to or less than the number of substrates. According to claim 1,
The deposition film forming process is atomic layer deposition (ALD),
In the atomic layer deposition method, a source gas, a purge gas, a reaction gas, and a purge gas are sequentially injected into the chamber to form a first cycle,
A substrate processing apparatus wherein a film is formed by a chemical substitution reaction between the source gas and a reaction gas, and components remaining after the chemical substitution reaction are removed from the chamber by the purge gas through the purge unit. According to claim 1,
The purge part is disposed along the outer side of the disk part,
The process gas is sprayed toward the substrate in a gravity direction from a shower head above the chamber,
A process gas that has performed the deposition film forming process on the substrate is discharged in a horizontal direction toward the purge part disposed on the side surface of the chamber. According to claim 1,
During the deposition film forming process, the substrate rotates based on the center of the pocket portion and the disk portion does not rotate. According to claim 1,
The disk unit rotates before or after each deposition film forming process,
A substrate processing apparatus wherein a facing position between the gas discharge port and the substrate is adjusted by rotation of the disk unit. According to claim 1,
During the deposition film forming process, the plurality of substrates seated in the pocket portion rotate in the same direction or in different directions. According to claim 1,
An indicator serving as a reference for aligning the start position of each deposition film forming process of the substrate is disposed in the pocket portion,
A reference point serving as a reference for aligning the indicator is disposed on the disk unit,
After the indicator is aligned toward the reference point, the substrate processing apparatus starts each deposition film forming process. According to claim 1,
When the number (n) of the substrates disposed on the disk portion during the deposition film forming process is an even number, the number (m) of the purge portion is greater than or equal to n/2 and less than or equal to n. According to claim 1,
When the number (n) of substrates disposed on the disk unit is an odd number during the deposition film forming process, the number (m) of the purge unit is equal to the number (n) of the substrates.

Images