KR20230047392A - 반도체 장치 및 전자 기기 - Google Patents

반도체 장치 및 전자 기기 Download PDF

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Publication number
KR20230047392A
KR20230047392A KR1020237004797A KR20237004797A KR20230047392A KR 20230047392 A KR20230047392 A KR 20230047392A KR 1020237004797 A KR1020237004797 A KR 1020237004797A KR 20237004797 A KR20237004797 A KR 20237004797A KR 20230047392 A KR20230047392 A KR 20230047392A
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KR
South Korea
Prior art keywords
transistor
terminal
circuit
gate
electrically connected
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Pending
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KR1020237004797A
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English (en)
Korean (ko)
Inventor
다카유키 이케다
슈헤이 나가츠카
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20230047392A publication Critical patent/KR20230047392A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/544—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices for evaluating functions by calculation
    • G06F7/5443—Sum of products
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • G06G7/14—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for addition or subtraction 
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • G06G7/16—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for multiplication or division
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/48—Analogue computers for specific processes, systems or devices, e.g. simulators
    • G06G7/60—Analogue computers for specific processes, systems or devices, e.g. simulators for living beings, e.g. their nervous systems ; for problems in the medical field
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • H01L27/0688—
    • H01L27/1203—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2207/00—Indexing scheme relating to methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F2207/38—Indexing scheme relating to groups G06F7/38 - G06F7/575
    • G06F2207/48—Indexing scheme relating to groups G06F7/48 - G06F7/575
    • G06F2207/4802—Special implementations
    • G06F2207/4818—Threshold devices
    • G06F2207/4824—Neural networks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Software Systems (AREA)
  • Computer Hardware Design (AREA)
  • Biomedical Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Neurology (AREA)
  • General Health & Medical Sciences (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Pure & Applied Mathematics (AREA)
  • Mathematical Optimization (AREA)
  • Power Engineering (AREA)
  • Computational Linguistics (AREA)
  • Artificial Intelligence (AREA)
  • Molecular Biology (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Neurosurgery (AREA)
  • Physiology (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020237004797A 2020-08-03 2021-07-19 반도체 장치 및 전자 기기 Pending KR20230047392A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020131616 2020-08-03
JPJP-P-2020-131616 2020-08-03
PCT/IB2021/056484 WO2022029532A1 (ja) 2020-08-03 2021-07-19 半導体装置、及び電子機器

Publications (1)

Publication Number Publication Date
KR20230047392A true KR20230047392A (ko) 2023-04-07

Family

ID=80117202

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237004797A Pending KR20230047392A (ko) 2020-08-03 2021-07-19 반도체 장치 및 전자 기기

Country Status (5)

Country Link
US (1) US12149237B2 (https=)
JP (1) JP7596386B2 (https=)
KR (1) KR20230047392A (https=)
CN (1) CN116134442A (https=)
WO (1) WO2022029532A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7717080B2 (ja) * 2020-09-18 2025-08-01 株式会社半導体エネルギー研究所 半導体装置、および電子機器
US12481867B2 (en) * 2021-04-28 2025-11-25 Arm Limited Memory for artificial neural network accelerator
TWI792958B (zh) * 2022-03-24 2023-02-11 瑞昱半導體股份有限公司 源極隨耦電路

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JP5847472B2 (ja) * 2011-07-20 2016-01-20 キヤノン株式会社 検出装置及び検出システム
US10483293B2 (en) * 2014-02-27 2019-11-19 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device, and module and electronic appliance including the same
US9584707B2 (en) * 2014-11-10 2017-02-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
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WO2018002774A1 (en) 2016-06-29 2018-01-04 Semiconductor Energy Laboratory Co., Ltd. Electronic device, operation method of the electronic device, and moving vehicle
CN117993454A (zh) 2017-06-21 2024-05-07 株式会社半导体能源研究所 包括神经网络的半导体装置
WO2019111137A1 (ja) * 2017-12-06 2019-06-13 株式会社半導体エネルギー研究所 半導体装置、表示装置、電子機器、及び動作方法
KR102823435B1 (ko) * 2018-10-11 2025-06-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
US11888446B2 (en) 2019-05-08 2024-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2020254909A1 (ja) 2019-06-21 2020-12-24 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US12120443B2 (en) 2020-01-21 2024-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2021209855A1 (ja) 2020-04-17 2021-10-21 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
CN115428167A (zh) 2020-04-23 2022-12-02 株式会社半导体能源研究所 半导体装置
TWI865775B (zh) 2020-05-15 2024-12-11 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
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M. Kang et al., "IEEE Journal Of Solid-State Circuits", 2018, Volume 53, No.2, p. 642-655.

Also Published As

Publication number Publication date
WO2022029532A1 (ja) 2022-02-10
US12149237B2 (en) 2024-11-19
CN116134442A (zh) 2023-05-16
JP7596386B2 (ja) 2024-12-09
JPWO2022029532A1 (https=) 2022-02-10
US20230283276A1 (en) 2023-09-07

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Patent event date: 20230209

Patent event code: PA01051R01D

Comment text: International Patent Application

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PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20240719

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