KR20230000814A - Producing method of mask - Google Patents

Abstract

The present invention relates to a method of manufacturing a mask. The method for manufacturing a mask according to the present invention is a method of manufacturing a mask for forming OLED pixels, comprising: (a) a step of preparing a mask metal film; (b) a step of forming a first insulating unit on the first side of the mask metal film; (c) a step of forming a second insulating unit on a second side opposite the first side of the mask metal film; (d) a step of patterning the first insulating unit and the second insulating unit to have spaces between the plurality of patterns; (e) a step of forming a sub-mask pattern in the mask metal film through the space between the patterns of the first insulating unit on the first side of the mask metal film; and (f) a step of manufacturing a mask by forming a main mask pattern in the mask metal film through the space between the patterns of the second insulating unit on the second side of the mask metal film. Accordingly, the present invention can reduce production costs for manufacturing stick masks.

Description

Mask manufacturing method {PRODUCING METHOD OF MASK}

The present invention relates to a method for manufacturing a mask. More specifically, it relates to a mask manufacturing method capable of stably forming a mask pattern in a long stick mask.

As a technology for forming pixels in the OLED manufacturing process, the FMM (Fine Metal Mask) method, which deposits organic materials on a desired location by attaching a thin metal shadow mask to the substrate, is mainly used.

In the existing OLED manufacturing process, a mask is manufactured in a stick shape, plate shape, etc., and then the mask is welded and fixed to the OLED pixel deposition frame. A plurality of cells corresponding to one display may be provided in one mask.

In the case of high-definition OLED, the current QHD picture quality is 500 to 600 PPI (pixel per inch), with a pixel size of about 30 to 50 μm, and 4K UHD and 8K UHD high-definition are higher than this, such as ~860 PPI and ~1600 PPI. have resolution. In this way, considering the pixel size of ultra-high-definition OLED, the alignment error between each cell must be reduced to about several micrometers, and an error that deviate from this can lead to failure of the product, so the yield can be very low.

In addition, as the OLED has a large area and high resolution, it is required that the thickness of the stick mask gradually become thinner and larger. In general, a method of performing etching on a rolled mask metal film has been used to form a mask pattern on a large-area stick mask. Alternatively, a method of forming a mask pattern by placing a large-area stick mask on a specific support plate and performing etching in only one direction has been used. With the conventional method, it is not easy to form a mask pattern with uniformity over all parts of a large-area stick mask, especially between cells, and since etching is performed in only one direction, it is difficult to precisely control the width and depth of the mask pattern. There was a problem.

Therefore, there is a need for a method of manufacturing a stick mask having a fine mask pattern so that it can be used for a large-area pixel process and perform a high-quality pixel process.

Accordingly, an object of the present invention is to provide a method for manufacturing a mask capable of stably forming a mask pattern when manufacturing a stick mask.

In addition, an object of the present invention is to provide a mask manufacturing method capable of precisely controlling the width and depth of a mask pattern by performing etching in both directions during the manufacturing process of a stick mask.

In addition, an object of the present invention is to reduce the production cost for manufacturing a stick mask and to provide a mask manufacturing method that can flexibly respond to various mask groups.

However, these tasks are illustrative, and the scope of the present invention is not limited thereby.

The above object of the present invention is a method for manufacturing a mask for forming an OLED pixel, comprising: (a) preparing a mask metal film; (b) forming a first insulating portion on the first surface of the mask metal layer; (c) forming a second insulating portion on a second surface of the mask metal film opposite to the first surface; (d) patterning the first insulating part and the second insulating part to have spaces between the plurality of patterns; (e) forming a sub-mask pattern on the mask metal layer through the space between the patterns of the first insulating portion on the first surface of the mask metal layer; (f) manufacturing a mask by forming a main mask pattern in the mask metal film through the space between the patterns of the second insulation part on the second surface of the mask metal film;

Step (a) may be a step of preparing a mask metal film by cutting the wound metal sheet into a size corresponding to one or a plurality of cells.

Between steps (a) and (b), a step of reducing the thickness is performed on one or both surfaces of the mask metal film.

In step (b), the mask metal film is adhered to the support substrate, and the first insulating portion may be interposed between the support substrate and the mask metal film.

Between steps (b) and (c), a process of reducing the thickness may be performed on a second surface of the mask metal film opposite to the first surface.

The thickness reduction process may be performed only on the mask cell region, which is the region where the mask pattern of the mask metal layer is to be formed, and may not be performed on the dummy region other than the mask cell region.

The first insulating part and the second insulating part may be dry film resist (DFR).

The first insulating part and the second insulating part may cover the mask metal film with a size larger than that of the mask metal film.

The mask metal layer may be stretched by applying a tensile force to both ends of the first insulating portion and the second insulating portion in an outward direction.

In step (d), the exposure of the first insulating part and the second insulating part may be performed in stages for each unit area corresponding to the mask cell of the mask metal film.

After exposing the first insulating part and the second insulating part in an area corresponding to one or two mask cells, the combination of the insulating part and the mask metal film is moved to a mask cell adjacent to the mask cell previously exposed. Exposure of the first insulating part and the second insulating part of the corresponding region may be performed.

A pattern spacing of the first insulating portion may be smaller than a pattern spacing of the second insulating portion.

Between steps (d) and (e), a step of adhering the support substrate to the upper portion of the second insulator through the temporary adhesive may be performed.

In step (e), the sub-mask pattern may be formed so as not to penetrate the mask metal layer.

Between steps (e) and (f), (1) removing the first insulation; (2) attaching the support substrate to the first surface of the mask metal film through the temporary bonding part; may further include.

In step (f), the main mask pattern may be formed to pass through the mask metal film, and the mask pattern may be constituted by the sum of the main mask pattern and the sub mask pattern.

According to the present invention configured as described above, there is an effect of stably forming a mask pattern when manufacturing a stick mask.

In addition, according to the present invention, it is possible to precisely control the width and depth of the mask pattern by performing etching in both directions during the manufacturing process of the stick mask.

In addition, according to the present invention, there is an effect of reducing production cost for manufacturing a stick mask and enabling flexible response to various mask groups.

Of course, the scope of the present invention is not limited by these effects.

1 is a schematic diagram showing a process of attaching a mask to a frame.
2 is a schematic diagram illustrating a process of preparing a mask metal film according to an embodiment of the present invention.
3 to 6 are schematic diagrams showing a manufacturing process of a mask according to an embodiment of the present invention. In each step, the upper drawing shows a schematic plan view, and the lower drawing shows a schematic cross-sectional side view.
7 is a schematic diagram illustrating an exposure process of an insulating part according to various embodiments of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The detailed description of the present invention which follows refers to the accompanying drawings which illustrate, by way of illustration, specific embodiments in which the present invention may be practiced. These embodiments are described in sufficient detail to enable one skilled in the art to practice the present invention. It should be understood that the various embodiments of the present invention are different from each other but are not necessarily mutually exclusive. For example, specific shapes, structures, and characteristics described herein may be implemented in one embodiment in another embodiment without departing from the spirit and scope of the invention. Additionally, it should be understood that the location or arrangement of individual components within each disclosed embodiment may be changed without departing from the spirit and scope of the invention. Accordingly, the detailed description set forth below is not to be taken in a limiting sense, and the scope of the present invention, if properly described, is limited only by the appended claims, along with all equivalents as claimed by those claims. Similar reference numerals in the drawings indicate the same or similar functions in various aspects, and the length, area, thickness, and the like may be exaggerated for convenience.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily practice the present invention.

1 is a schematic diagram showing a process of attaching the mask 10 to the frame 20.

The conventional mask 10 is a stick-type or plate-type, and the stick-type mask 10 of FIG. 1 can be used by welding both sides of the stick to the OLED pixel deposition frame. A plurality of display cells C are provided on the body of the mask 10 (or the mask layer 11 ). One cell C corresponds to one display of a smartphone or the like. A pixel pattern P is formed in the cell C to correspond to each pixel of the display.

Referring to (a) of FIG. 1 , the stick mask 10 is loaded on the square frame-shaped frame 20 in a stretched state by applying tensile forces F1 to F2 in the direction of the long axis of the stick mask 10 . The cells C1 to C6 of the stick mask 10 are positioned in the blank area inside the frame 20 .

Referring to (b) of FIG. 1, after aligning while finely adjusting the tensile forces (F1 to F2) applied to each side of the stick mask 10, welding (W) a part of the side of the stick mask 10 Accordingly, the stick mask 10 and the frame 20 are interconnected. 1(c) shows a cross-sectional side view of the frame and the stick mask 10 connected to each other.

After the plurality of stick masks 10 and the frame 20 are interconnected, the organic material source is deposited on the lower part of the stick mask 10 after being placed in close contact with or placed close to the substrate for forming the OLED pixels of the OLED pixel deposition apparatus. can The organic material source passed through the pixel pattern P of the mask 10 and deposited on the substrate to form the OLED pixel may act as a pixel of the OLED.

Conventionally, in order to form a mask pattern on a large-area stick mask, a rolled mask metal film is etched, or a large-area stick mask is placed on a specific support plate and then etched in only one direction. It is not easy to apply a process for reducing the thickness of a rolled metal film, which is a rolled mask metal film. Accordingly, it is inconvenient to use a material for which thickness reduction has been performed before the mask pattern formation process or to perform thickness reduction after the mask pattern formation process. In addition, since both ends of the rolled mask metal film are rolled around the support shaft, the support is unstable, and therefore, non-uniformity of the mask pattern between cells of the large-area stick mask increases. When etching is performed in only one direction, it is difficult to precisely control the width and depth of the mask pattern.

Therefore, the present invention applies mask pattern etching processes in both directions and at the same time supports a large-area stick mask to stably perform a mask pattern formation process and stably perform a process of reducing the thickness of a mask metal film. It provides a method for manufacturing a large-area stick mask that can be used.

2 is a schematic diagram illustrating a process of preparing a mask metal film 110' according to an embodiment of the present invention.

Referring to FIG. 2 , a mask metal film 110 ′ for manufacturing a stick mask may be prepared. A plurality of mask patterns P are formed in the stick mask 100 [see FIG. 6] of the present invention, and in one stick mask 100, one or more cells C, which are units in which the mask patterns P are clustered, are formed. Revenge may be involved. One mask cell C may correspond to one display of a smartphone or the like. 6 shows an embodiment in which five mask cells (C: C1 to C5) are included in the stick mask 100 .

The mask metal film 110' (or stick mask 100) may be made of invar, super invar, nickel (Ni), or nickel-cobalt (Ni-Co). A metal sheet formed by a rolling process or electroforming may be used as the mask metal film 110' (or stick mask 100).

The metal sheet 30 , which is a raw material of the mask metal film 110 ′, may be wound around a winding roller 41 . The metal sheet 30 is conveyed in a flat state by the roller 42 and cut into an appropriate size by the cutting means 45 to prepare the mask metal film 110'. The size of the mask metal layer 110 ′ to be cut may correspond to or be slightly larger than the size of the stick mask 100 . Since the present invention performs a process of forming a mask pattern P using a mask metal film 110 ′ cut from a wound metal sheet 30 and having a size to include one or a plurality of cells C, the mask pattern P is formed. There is an advantage in that handling is easier than a process of etching the mask metal film in a rolling state. In addition, there is an advantage in that it can flexibly respond to changes in cell (C) size specifications according to new or developed products. In addition, the process of performing etching in a rolling state can produce only a single product from the entire roll, whereas the present invention can manufacture the stick mask 100 in a single-wafer method, which is advantageous for small-quantity production of various types. In addition, in the process of performing etching in a rolling state, deviations may occur in the characteristics of each part of the metal sheet in a process that is continuously performed, so waste of the metal sheet increases, such as discarding the entire part and performing the process. Since the present invention cuts and uses the mask metal film 110' in a single-wafer method, there is an advantage in that the amount of wasted metal sheets can be significantly reduced.

3 to 6 are schematic diagrams illustrating a manufacturing process of the mask 100 according to an embodiment of the present invention. In each step, the upper drawing shows a schematic plan view, and the lower drawing shows a schematic cross-sectional side view.

Referring to (a) of FIG. 3 , the mask metal film 110 ′ prepared in FIG. 2 may be adhered to the support substrate 50 . In this case, a first insulating portion 60:61 may be interposed between the support substrate 50 and the mask metal layer 110'. The first insulating portion 61 is preferably a photoresist, and more preferably a dry film resist (DFR). In addition, an adhesive means such as liquid wax, alcohol, or water may be further interposed between the first insulating part 60 and the support substrate 50 to provide additional adhesive force. The material of the additional bonding means is not limited as long as it can fix the mask metal film 110' to the support substrate 50 when the thickness of the mask metal film 110' is reduced (PS), which will be described later.

Subsequently, a process of reducing the thickness (PS) may be performed in a state in which the mask metal film 110 ′ is adhered and supported to the support substrate 50 . The thickness of the mask metal film 110' may be thinned by removing a part of the mask metal film 110' while mirror-finishing one surface (lower surface) of the mask metal film 110' through the thickness reduction process (PS) (or planarization process). The thickness reduction (PS) may be performed by a chemical mechanical polishing (CMP) method, and a known CMP method may be used without limitation. In addition, the thickness of the mask metal film 110' may be reduced (PS) by a chemical wet etching or dry etching method. In addition to this, a planarization process capable of thinning the thickness of the mask metal film 110' may be used without limitation.

Since the mask metal film 110 ′ manufactured through the rolling process has a thickness greater than several tens of μm, the thickness can be reduced to manufacture a mask having high resolution. Since particles in the center of the mask metal film 110' are more regular than the surface, it is advantageous for etching for forming the mask pattern P. In addition, a thickness reduction or planarization process may be performed on the mask metal film 110 ′ manufactured through the electroplating process to control surface characteristics and thickness. As the thickness of the mask metal film 110' is reduced, the mask metal film 110' -> 110 may have a thickness of about 5 μm to about 25 μm. For example, a 40 μm thick mask metal layer 110 ′ may be made into a 25 μm thick mask metal layer 110 after thickness reduction (PS).

Since the support substrate 50 adheres and supports the mask metal film 110 ′, there is an advantage in that a thickness reduction (PS) process can be stably performed. The thickness reduction (PS) may be performed only on the mask cell (C) region, which is the region where the mask pattern (P) is to be formed. Then, the dummy region other than the mask cell (C) region has a relatively thick weld (not shown). When the stick mask 100 is formed and welded to a frame (not shown), there is an advantage in that welding can be performed well.

Meanwhile, without performing thickness reduction (PS) after bonding to the support substrate 50, one side or both sides of the mask metal film 110' is a separate process after the cutting process of the mask metal film 110' of FIG. 2 is performed. The mask metal film 110 whose thickness has been reduced by performing the thickness reduction (PS) on may be used immediately.

Next, referring to (b) of FIG. 3 , the mask metal film 110 may be separated from the support substrate 50 . Since the lower surface (first surface) of the mask metal film 110 is bonded to the first insulating portion 61, separating the first insulating portion 61 from the support substrate 50 allows the first insulating portion 61 ) and the mask metal film 110 may be separated from the support substrate 50 at the same time. In particular, when the first insulating part 61 is a dry film resist (DFR), only the film can be separated from the support substrate 50, so the process can be simplified.

Subsequently, a second insulating portion 65 may be formed on the top surface (second surface) of the mask metal film 110 . The second insulating part 65 is preferably made of the same material as the first insulating part 61, and more preferably made of DFR. The first insulating portion 61 and the second insulating portion 65 may cover upper and lower surfaces of the mask metal layer 110 . That is, the insulating part 60 may cover the mask metal film 110 so as to be disposed therein.

Meanwhile, before separating the mask metal film 110 and the first insulating part 61 from the support substrate 50, the second insulating part 65 is formed on the upper surface of the mask metal film 110 and then supported. The mask metal film 110 and the insulating parts 60 (61, 65) may be separated from the substrate 50.

Next, referring to (c) of FIG. 4 , patterned first and second insulating parts 61 and 65 are formed on the first and second surfaces (lower surface and upper surface) of the mask metal film 110 . can do. Patterning may be simultaneously performed on the first insulating portion 61 and the second insulating portion 65 or may be performed separately. In addition, as will be described later with reference to FIG. 7 , patterning may be performed for each unit region of the first insulating portion 61 and the second insulating portion 65 . The space 62 between the patterns of the first insulating part 61 and the space 66 between the patterns of the second insulating part 65 are a plurality of mask cells (in one embodiment, five mask cells C1 to C5). It can be prepared to respond to.

As will be described later, since the first insulating portion 61 is a pattern for forming the submask pattern P2 and the second insulating portion 65 is a pattern for forming the main mask pattern P1, the pattern of the first insulating portion 61 The spacing (the width of the inter-pattern space 62) is preferably smaller than the pattern spacing (the width of the inter-pattern space 66) of the second insulating portion 65. Alternatively, the spaces 62 and 66 between the patterns may be the same, and the size of the main mask pattern P1 and the sub mask pattern P2 may be different by controlling the etching degree.

The insulating part 60 surrounds the mask metal film 110, the insulating part 60 and the mask metal film 110 are formed in the same plane direction, and the insulating part 60 is further than the mask metal film 110. can have a large size. Therefore, when both ends of the insulating portion 60 are clamped with clamping means (not shown) and a tensile force is applied outward to make it taut, the mask metal film 110 also becomes taut along the insulating portion 60. can

7 is a schematic diagram illustrating an exposure process of an insulating part according to various embodiments of the present invention.

With the insulating portion 60 and the mask metal film 110 stretched, the patterned first and second insulating portions 61 and 65 may be formed through exposure (PE), baking, and developing processes. . At this time, as shown in (a) of FIG. 7 , exposure PE may be performed on the entire mask metal layer 110 at once. However, since the mask metal film 110 is a material of the stick mask 100 that is long enough to form a plurality of cells C, in order to perform exposure (PE) on the long mask metal film 110 at one time, a large scale is required. Equipment such as exposure equipment and exposure masks are required.

Accordingly, as shown in (b) of FIG. 7 , the exposure (PE1 -> PE2 -> PE3) may be performed on a portion of the mask metal film 110 step by step. A small-sized exposure equipment 70 capable of performing exposure in one or two cells C is prepared, and the mask metal film 110 is exposed through several steps (S1 -> S2 -> S3). (PE) can be performed.

For example, when the size of the mask metal film 110 includes 5 cells (C: C1 to C5), the first and second cells (C1, C2) are transferred to the exposure equipment 70 in the first step (S1). ), and then move the exposure equipment 70 or move the insulator 60/mask metal film 110 combination to move the exposure equipment 70 in the second step (S2). No. 3 or 4?? Exposure PE2 may be performed on the cells C3 and C4, and exposure PE3 may be performed on the fifth cell C5 using the exposure equipment 70 in a third step S3.

In this way, exposure (PE) may be performed on a portion of the mask metal film 110 step by step in a state in which both ends of the insulating part 60 are clamped and fixed to the combination of the insulating part 60 and the mask metal film 110. Therefore, there is an advantage that the size and cost of the equipment can be reduced.

Next, referring to (d) of FIG. 4 , a submask pattern P2 may be formed on the first surface (lower surface) of the mask metal film 110 . The sub-mask pattern P2 may be formed by etching the space 62 between the patterns of the first insulating portion 61 formed on the first surface (lower surface) of the mask metal film 110 . The sub-mask pattern P2 may be formed in each mask cell C region of the mask metal film 110, and a dry etching method, a wet etching method, or the like may be used without limitation for etching.

For example, when wet etching is used, since an undercut occurs due to isotropic etching, the width of the submask pattern P2 may be greater than the width of the space 32 between the patterns of the first insulating portion 61. . For this reason, it is preferable to form the sub-mask pattern P2 to a very small thickness with respect to the thickness of the mask metal layer 110 . That is, etching may be performed only to a very small thickness so as not to penetrate the mask metal layer 110 so that the lower width of the mask pattern P, which is an intended set value, may be approximated. According to an embodiment, the thickness of the sub-mask pattern P2 may be less than about 5 μm, preferably less than about 2 μm, based on the mask metal layer 110 having a thickness of about 20 μm. A width of the submask pattern P2 may be about 10 μm to about 25 μm.

Before etching to form the submask pattern P2 , the support substrate 51 may be bonded to the upper surface of the insulating portion 60 via the temporary adhesive portion 55 . That is, the space 66 between the patterns of the second insulating portion 65 may be blocked by the support substrate 51 and the temporary adhesive portion 55 . Accordingly, it is possible to prevent the etchant from penetrating into the space 66 between the patterns of the second insulating portion 65 in the etching process of the submask pattern P2 .

The temporary adhesive portion 55 may use an adhesive that can be separated by application of heat, an adhesive that can be separated by UV irradiation, and preferably a film that can be separated by UV irradiation.

Next, referring to (e) of FIG. 5 , the first insulating portion 61 may be removed. When the first insulating portion 61 is DFR, the first insulating portion 61 can be removed by peeling the film. When the first insulating portion 61 is removed, the sub-mask pattern P2 may be exposed on the lower surface of the mask metal layer 110 .

Subsequently, the support substrate 51 and the temporary adhesive portion 55 on the upper portion of the second insulating portion 65 are separated, and the support substrate 52 is attached to the lower surface of the mask metal film 110 through the temporary adhesive portion 56. can be glued.

The first surface (lower surface) of the mask metal film 110 and the support substrate 52 may be bonded to each other via a temporary bonding portion 56 . A temporary adhesive portion 56 may be previously formed on the first surface of the mask metal film 110 and/or the upper surface of the support substrate 52 before bonding. The temporary adhesive portion 56 may also be made of the same material as the temporary adhesive portion 55, and preferably, a film capable of being separated by UV irradiation may be used.

The temporary adhesive portion 56 may be filled in the sub-mask pattern P2 exposed on the first surface of the mask metal layer 110 . Accordingly, it may play a role of preventing the shape of the sub mask pattern P2 from being changed in the process of forming the main mask pattern P1, which will be described later. The temporary bonding portion can ensure that the mask metal film 110 is better adhered to and supported on one surface of the support substrate 50 until the mask pattern P process is completed on the mask metal film 110 to manufacture the mask 100 . there is.

Meanwhile, a barrier insulating portion (not shown) may be further interposed between the temporary adhesive portion 56 and the mask metal layer 110 . In the etching process of forming the main mask pattern P1 to be described later on the barrier insulation part, the etchant penetrates the interface between the mask metal film 110 and the temporary bonding part 56 and damages the temporary bonding part 56/support substrate 52. and prevent an etching error of the main mask pattern P1 from occurring. The barrier insulator is made of a negative or positive photoresist material that is not etched by an etchant, and a printing method or the like can be used. In addition, in order to preserve the original shape in the wet etching process, the barrier insulation part may use a curable negative photoresist, a negative photoresist including epoxy, or the like. For example, an epoxy-based SU-8 photoresist or a black matrix photoresist may be used to cure the temporary bonding portion during a baking process.

Next, referring to (f) of FIG. 5 , a main mask pattern P1 may be formed on a second surface (upper surface) opposite to the first surface (lower surface) of the mask metal film 110 . The main mask pattern P1 may be formed by etching the space 66 between the patterns of the second insulating portion 65 formed on the second surface (upper surface) of the mask metal film 110 . The main mask pattern P1 may be formed to correspond to the sub mask pattern P2. The main mask pattern P1 may be formed in each mask cell C region of the mask metal film 110, and a dry etching method, a wet etching method, or the like may be used for etching without limitation.

For example, when wet etching is used, since an undercut occurs due to isotropic etching, the width of the main mask pattern P1 may be larger than the width of the space 66 between the patterns of the second insulating portion 65. . Considering this, it is preferable to set the width between the patterns of the second insulating part 65 . According to an embodiment, the main mask pattern P1 may be formed to a thickness of about 15 to 18 μm based on the mask metal layer 110 having a thickness of about 20 μm. The width of the main mask pattern P1 may be about 30 to 40 μm, but is not limited thereto.

The etching process of the main mask pattern P1 may be performed up to the interface where the sub mask pattern P2 is formed, that is, the portion where the temporary bonding portion 56 (or barrier insulating portion) is formed. The main mask pattern P1 may communicate with the sub mask pattern P2.

Next, referring to (g) of FIG. 6 , the second insulating portion 66 may be removed. The formation of the main mask pattern P1 allows the mask metal layer 110 to pass through, and the mask pattern P may be constituted by the sum of the main mask pattern P1 and the sub mask pattern P2. As the plurality of mask patterns P are formed, the mask metal film 110 can function as a mask 100 .

Subsequently, a step of separating the mask 100 from the support substrate 52 may be further performed. Separation may be performed by at least one of heat application, chemical treatment, ultrasonic application, and UV application to the temporary adhesive portion 56, and when a barrier insulation portion between the support substrate 50 and the mask 100 is interposed, the barrier Isolation can also be performed by removing the insulation. Accordingly, manufacturing of the stick mask 100 including the plurality of mask cells C may be completed.

As described above, since the present invention can apply the etching process of the mask pattern P in both directions while the mask metal film 110 is adhered and supported using the support substrates 51 and 52, the mask pattern P can be stably formed, and a uniform mask pattern P can be implemented for each cell in the large-area stick mask 100. In addition, there is an effect of stably performing a process of reducing the thickness of the mask metal film 110 .

In addition, since a mask metal film of a size corresponding to the cell can be used by cutting it without performing a process on the rolled mask metal film, it is possible to flexibly respond to changes in cell (C) size specifications according to new or developed products. Since the stick mask 100 can be manufactured in a single-wafer method, there is an advantage in small quantity production of various kinds, and since the process can be performed with small-scale facilities, it is possible to quickly respond to the setup and expansion of facility lines as needed. There are possible effects.

Although the present invention has been shown and described with preferred embodiments as described above, it is not limited to the above embodiments, and various variations can be made by those skilled in the art within the scope of not departing from the spirit of the present invention. Transformation and change are possible. Such modifications and variations are to be regarded as falling within the scope of this invention and the appended claims.

50, 51, 52: support substrate
60, 61, 65: insulator, first and second insulator
62, 66: space between the first and second insulating patterns
100: mask
110: mask metal film
C: cell, mask cell
P: mask pattern
P1: Main mask pattern
P2: sub mask pattern

Claims (16)

As a method for manufacturing a mask for forming an OLED pixel,
(a) preparing a mask metal film;
(b) forming a first insulating portion on the first surface of the mask metal layer;
(c) forming a second insulating portion on a second surface of the mask metal film opposite to the first surface;
(d) patterning the first insulating part and the second insulating part to have spaces between the plurality of patterns;
(e) forming a sub-mask pattern on the mask metal layer through the space between the patterns of the first insulating portion on the first surface of the mask metal layer;
(f) manufacturing a mask by forming a main mask pattern on the mask metal film through the space between the patterns of the second insulating part on the second surface of the mask metal film;
Including, the manufacturing method of the mask. According to claim 1,
Step (a) is a step of preparing a mask metal film by cutting the rolled metal sheet into a size corresponding to one or a plurality of cells. According to claim 2,
Between steps (a) and (b), a step of reducing the thickness is performed on one or both surfaces of the mask metal film. According to claim 1,
In step (b), the mask metal film is adhered to the support substrate, and the first insulating portion is interposed between the support substrate and the mask metal film. According to claim 4,
Between steps (b) and (c), a step of reducing the thickness is performed on a second surface of the mask metal film opposite to the first surface. According to claim 5,
A method of manufacturing a mask, wherein the thickness reduction process is performed only on a mask cell region, which is an area where a mask pattern of a mask metal film is to be formed, and is not performed on a dummy region other than the mask cell region. According to claim 1,
The method of manufacturing a mask, wherein the first insulating portion and the second insulating portion are dry film resist (DFR). According to claim 1,
The method of manufacturing a mask, wherein the first insulating portion and the second insulating portion have a size larger than that of the mask metal film and cover the mask metal film. According to claim 8,
A method for manufacturing a mask, wherein the mask metal film can be stretched by applying a tensile force to both ends of the first insulating portion and the second insulating portion in an outward direction. According to claim 1,
In step (d), the exposure of the first insulating portion and the second insulating portion is performed in stages for each unit area corresponding to the mask cell of the mask metal film. According to claim 10,
After exposing the first insulating part and the second insulating part in an area corresponding to one or two mask cells, the combination of the insulating part and the mask metal film is moved to a mask cell adjacent to the mask cell previously exposed. A method of manufacturing a mask, wherein exposure of a first insulating portion and a second insulating portion of a corresponding region is performed. According to claim 1,
The pattern spacing of the first insulating portion is smaller than the pattern spacing of the second insulating portion. According to claim 1,
Between the steps (d) and (e), a step of adhering the support substrate to the upper portion of the second insulating portion via the temporary adhesive portion is performed. According to claim 1,
In step (e), the sub-mask pattern is formed so as not to penetrate the mask metal film. According to claim 1,
Between steps (e) and (f),
(1) removing the first insulating part;
(2) bonding the support substrate to the first surface of the mask metal film through the temporary bonding portion;
Further comprising a method for manufacturing a mask. According to claim 1,
In step (f), the main mask pattern is formed to pass through the mask metal film, and the mask pattern is constituted by the sum of the main mask pattern and the sub mask pattern.

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