KR20220163422A - Deposition Apparatus, Processing System, and Method of Making Layers of Optoelectronic Devices - Google Patents

Abstract

A deposition apparatus for large-area substrate processing in a substrate processing system is described. The deposition apparatus includes a vacuum chamber; a horizontal array of rotatable sputter cathodes configured with cylindrical targets, the horizontal array of rotatable sputter cathodes provided in a vacuum chamber; and a substrate support within the vacuum chamber below the horizontal array of rotatable sputter cathodes, the substrate support configured for a stationary deposition process wherein the horizontal array of sputter cathodes sputters downward onto a substrate on the substrate support.

Description

Deposition Apparatus, Processing System, and Method of Making Layers of Optoelectronic Devices

[0001] Embodiments of the present disclosure relate, for example, to substrate processing in a cluster tool, particularly a cluster tool with horizontal substrate handling. Embodiments of the present disclosure relate specifically to a substrate processing apparatus, such as a deposition apparatus for static deposition. Embodiments may also relate to horizontally oriented rotary cathode arrays, for example straight or bowed, in static deposition applications, particularly for cluster system layouts. Specifically, embodiments relate to a deposition apparatus for large-area substrate processing in a substrate processing system, such as a cluster processing system, a substrate processing system for large-area substrates, and a method of manufacturing a layer of an optoelectronic device.

[0002] A vacuum processing system is a system that includes at least a vacuum chamber having a processing region in which a substrate can be positioned relative to the processing region for processing of the substrate. Several methods are known for depositing materials on a substrate. For example, the substrate may be subjected to a physical vapor deposition (PVD) process, such as a sputtering process or an evaporation process, a spraying process, or the like, or a chemical vapor deposition (CVD) process. ) can be coated using the process. A substrate on which a material is deposited, ie a substrate to be coated, is introduced into a vacuum chamber of the vacuum processing system and positioned relative to a processing region of the vacuum chamber of the vacuum processing system.

[0003] For example, the coating process may take place in a vacuum chamber. In the case of a sputter deposition process, material is ejected from a target positioned in a vacuum chamber. This material is deposited on a substrate. Material ejection from the target may be provided by bombarding the target with ions generated in a plasma in a vacuum chamber. The target typically forms a sputter cathode by application of a potential difference, and in the presence of a thereby generated electric field, ions generated in the plasma region accelerate/move towards the electrically charged sputter cathode and move on the sputter cathode. atoms are dislodged from the cathode. Thus, the sputter cathode provides material for material deposition and thus forms a material source.

[0004] Coating processes, ie material deposition processes, can be considered for large area substrates, for example in display manufacturing technology. Coated substrates are used in many technical applications, eg in microelectronics, in the production of semiconductor devices, for substrates with thin film transistors as well as for insulating panels etc. can be used The trend towards larger substrates, eg manufacturing larger displays, results in larger vacuum processing systems.

[0005] Sputtering can be performed as magnetron sputtering, where a magnet assembly is used to confine the plasma for improved sputtering conditions. Plasma confinement can also be used to tune the particle distribution of a material to be deposited on a substrate. For example, a uniform layer with defined layer properties is advantageous. This is especially true for large area deposition, for example the manufacture of displays on large area substrates. Additionally, uniformity and process stability can be particularly difficult to achieve for static deposition processes where the substrate is not continuously moved through the deposition zone.

[0006] For large area substrates, flexibility of the manufacturing system, cost of ownership and footprint may be considered. Additionally, in display manufacturing fabrication, substrates are handled horizontally. In the case of a vertical processing system, a plurality of moving components are used to move a substrate from a horizontal orientation to a vertical orientation. Accordingly, a horizontal processing system, ie a processing system in which the substrate is held in a horizontal orientation, may be beneficial. Still further, because the central vacuum transfer chamber can flexibly move substrates to the various processing chambers, the cluster system can increase the flexibility of manufacturing applications.

[0007] Improvements in product maintenance cycles improve the throughput of a substrate processing apparatus or substrate processing system, respectively. In view of the above, improved deposition apparatus, improved processing systems, and improved methods for fabricating layers of optoelectronic devices would be advantageous.

[0008] In view of the above, a deposition apparatus, a substrate processing system and a method for manufacturing a layer of an electronic device, in particular an optoelectronic device, according to the independent claims are provided. Further features, details, aspects, implementations and embodiments are shown in the dependent claims, detailed description and drawings.

[0009] According to one embodiment, a deposition apparatus for large area substrate processing in a substrate processing system is provided. The deposition apparatus includes a vacuum chamber; a horizontal array of rotatable sputter cathodes configured with cylindrical targets, the horizontal array of rotatable sputter cathodes provided in a vacuum chamber; and a substrate support within a vacuum chamber below a horizontal array of rotatable sputter cathodes, the substrate support configured for a stationary deposition process wherein the horizontal array of sputter cathodes sputters downward onto a substrate on the substrate support.

[0010] According to one embodiment, a substrate processing system for a large area substrate is provided. The substrate processing system includes a transfer chamber; one or more deposition devices according to any of the embodiments described herein coupled to the transfer chamber; and one or more load lock chambers coupled to the transport chamber.

[0011] According to one embodiment, a method of manufacturing a layer of an electronic device is provided. The method includes loading a large area substrate onto a robot arm of a robot disposed at least partially in a central transfer chamber; transferring a large area substrate into a deposition apparatus according to any of the embodiments described herein; and sputtering a layer of material onto the large area substrate.

[0012] According to one embodiment of the present disclosure, a display device is provided. The display device includes a backplane provided on a substrate. The backplane includes a plurality of lines for driving the display structure and pixel electrodes addressed by driving the display structure. The display device further includes one or more organic layers that emit light when driving the pixel electrodes. A touch screen panel is deposited over one or more organic layers disposed over a substrate. The touch panel may include one or more layers having or consisting of a material selected from the group consisting of copper, aluminum, titanium, molybdenum and tungsten.

[0013] According to one embodiment of the present disclosure, a display device is provided. The display device includes a backplane provided on a substrate. The backplane includes a plurality of lines for driving the display structure and pixel electrodes addressed by driving the display structure. The backplane includes sputtered copper lines to have a thickness of 1 μm or more. Copper lines are provided by sputtering.

[0014] In such a way that the above described features of the present disclosure may be understood in detail, a more specific description of the present disclosure briefly summarized above may be made with reference to embodiments, some of which are It is illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only typical embodiments of the present disclosure and are therefore not to be regarded as limiting the scope of the present disclosure, as the present disclosure will allow other equally valid embodiments. because it can
1 schematically illustrates a processing system having at least a deposition apparatus for horizontal sputtering from rotatable cylindrical targets or cathodes, according to embodiments of the present disclosure;
[0016] FIG. 2A shows a schematic cross-sectional view of a deposition apparatus including an array of horizontal sputter cathodes, in accordance with embodiments described herein;
[0017] FIG. 2B shows a schematic cross-sectional view of a deposition apparatus including an array of horizontal sputter cathodes, in accordance with embodiments described herein;
[0018] Figure 3 shows a schematic diagram of a substrate support having a chucking assembly, ie, an electrostatic chuck (ESC), in accordance with embodiments described herein;
[0019] Figure 4 schematically illustrates a perspective view of a processing system including at least a deposition apparatus for horizontal sputtering from rotatable cylindrical targets, according to embodiments of the present disclosure;
[0020] Figure 5 illustrates a portion of a deposition apparatus according to embodiments of the present disclosure, illustrating cathode drive units and corresponding power sources;
[0021] Figure 6 shows a schematic diagram of a deposition apparatus including a vacuum chamber having three segments, according to embodiments of the present disclosure;
[0022] Figures 7A and 7B show schematic side views of a deposition apparatus according to embodiments of the present disclosure and illustrate concepts of maintenance;
[0023] Figures 8a and 8b show schematic side views of a deposition apparatus according to embodiments of the present disclosure and illustrate concepts of maintenance;
[0023] Figure 9 shows a flow chart illustrating methods for maintaining a deposition apparatus for large area substrate processing, in accordance with embodiments of the present disclosure;
10 shows a flow diagram illustrating methods of manufacturing a layer of an electronic device, in accordance with embodiments of the present disclosure.

[0026] Reference will now be made in detail to various embodiments of the present disclosure, some examples of which are illustrated in the drawings.

[0027] Embodiments of the present disclosure relate to a substrate processing system for large area substrates. In particular, the substrate processing system can be a cluster processing system having deposition devices according to embodiments of the present disclosure, the deposition devices including an array of cylindrical sputter cathodes for deposition in a horizontal substrate orientation. Cylindrical sputter cathodes may also be referred to as rotatable sputter cathodes, in which the cylindrical target is rotated about an axis to improve material utilization. According to embodiments of the present disclosure, horizontal orientation should be understood as distinct from vertical orientation. It is understood that the horizontal orientation of the slit opening, substrate, sputter cathode or sputter cathode array is horizontal ±20°.

[0028] Embodiments further relate to a deposition apparatus having a horizontal array of sputter cathodes, particularly rotatable sputter cathodes, for example with cylindrical targets. An array of sputter cathodes can sputter downward onto a substrate in a stationary deposition process. An array of sputter cathodes may be disposed over a substrate on which a layer of material is deposited.

[0029] Embodiments of the present disclosure may further relate to horizontal sputtering from a cathode array over a substrate, particularly for static or stationary substrate processing, wherein the substrate support is configured to cool the substrate during processing. For example, the substrate support may include an electrostatic chuck that pulls the substrate during processing (over the force of gravity acting on the substrate) and a cooling gas provided between the substrate support surface and the substrate when loaded onto the substrate support. can

[0030] Some embodiments may further relate to deposition apparatuses and methods of maintaining deposition apparatuses with an improved maintenance concept, particularly in a substrate processing system for large area substrates. Also additionally, additionally or alternatively, embodiments may relate to methods of fabricating a layer of an optoelectronic device by a deposition apparatus having a sputter cathode array that deposits material on a horizontally oriented substrate.

[0031] For some applications, temperature control of the substrate is beneficial for good processing results. For example, substrate processing, such as sputter deposition, may occur on a substrate having layers of previous processing operations provided on the substrate. For the application to be performed, the substrate having previously deposited layers is referred to as the substrate to be processed. For example, the substrate includes a glass plate or other substrate plate and one or more organic layers deposited on the glass plate or other substrate plate. During the process of further deposition of a layer onto a substrate having one or more organic layers, the temperature of the substrate is advantageously controlled to reduce or avoid degradation of the one or more organic layers.

[0032] Additionally, layer deposition may be provided for relatively thick layers, for example. Depositing thick layers on a substrate, for example by a sputter deposition process, can cause intrinsic stress in the deposited layer. Stress can cause the substrate to warp or bulge, and can degrade device fabrication. The inherent stress of the layer to be deposited can be reduced by controlling the temperature of the substrate during deposition of the layer. Thus, also for such applications, the temperature of the substrate is advantageously controlled to reduce or avoid degradation of device fabrication.

[0033] As another possible combination, for static deposition, an array of rotatable cathodes with cylindrical targets may be used. Rotatable cathodes with cylindrical targets may benefit from improved material utilization of the target. Improved material utilization can result in relatively long maintenance cycles for target exchange. Although longer maintenance cycles are beneficial, longer maintenance cycles of cylindrical targets and maintenance of other components with shorter maintenance cycles may conflict. A deposition apparatus and/or processing system and improved maintenance concept according to embodiments of the present disclosure to utilize longer maintenance cycles of target exchange while enabling shorter maintenance cycles for other components. this is beneficial Accordingly, horizontal sputter arrays are generally advantageous, and more particularly horizontal sputter arrays having a more improved maintenance-friendly device design may be advantageous. Additionally, easy and convenient access to components for maintenance may reduce cost of ownership, especially in terms of ergonomic access for maintenance.

[0034] 1 shows a substrate processing system 100 . The substrate processing system 100 may be a cluster system having a transfer chamber 120 . Transfer chamber 120 may be a central transfer chamber. Robot 122 may be disposed at least partially within transfer chamber 120 . Robot 122 may have a robot arm 154 . Robot 122 may transfer substrates between chambers coupled to transfer chamber 120 . At least one load lock chamber 105 may be coupled to the transfer chamber 120 . 1 shows two load lock chambers 105 coupled to transfer chamber 120 . One or more deposition devices 110 may be coupled to the transfer chamber 120 . The robot 122 may transfer substrates between the loadlock chamber and the deposition chamber and vice versa, or between different deposition chambers attached to the transfer chamber 120 .

[0035] The deposition apparatus 110 includes a vacuum chamber. Additionally, the transfer chamber 120 may be a vacuum transfer chamber. Accordingly, substrates can be handled under vacuum from the loadlock chamber to the transfer chamber, from the transfer chamber to the vacuum chamber of the deposition apparatus 110, and from the vacuum chamber of the first deposition apparatus to the vacuum chamber of the additional deposition apparatus.

[0036] The apparatuses and systems described herein are specifically configured to move and process large area substrates, which may have a surface of 1 m2 or more. The term “substrate” may in particular encompass substrates such as glass substrates, eg glass plates. Additionally, the substrate may include wafers, slices of transparent crystal such as sapphire, and the like. However, the term “substrate” may encompass other substrates that may be flexible or inflexible, such as, for example, a foil or web. The substrate may be formed of any material suitable for material deposition. According to some embodiments of the present disclosure, which may be combined with other embodiments described herein, the substrate is configured to fabricate a display, and may in particular be a large area substrate.

[0037] 1 schematically depicts a substrate processing system 100 that includes one or more deposition devices 110 according to the present disclosure. One or more deposition devices 110 are intended to deposit material onto a substrate and include a vacuum chamber and/or sputter source region according to embodiments of the present disclosure. An array of deposition sources configured to deposit material on a substrate in a processing region in a horizontal orientation may be provided. The substrate processing system 100 further includes a transfer chamber 120, particularly a vacuum transfer chamber coupled to one or more deposition devices.

[0038] 1 also shows the load lock chambers 105 . The vacuum transfer chamber 120 is coupled to one or more deposition devices. The vacuum transfer chamber may transfer the substrate to one or more vacuum chambers through openings, particularly horizontal slit openings.

[0039] In some embodiments, the substrate processing system 100 may include one or more support chambers arranged to perform certain additional functions, such as storage of substrates. The processing system may include one or more loadlock chambers 105 configured to receive a substrate under atmospheric pressure or non-vacuum conditions (A) and then transfer the substrate into a vacuum transfer chamber under vacuum conditions (V). have. Vice versa, the loadlock chamber can also receive a substrate from the transfer chamber under vacuum conditions (V) and provide a substrate under atmospheric pressure or non-vacuum conditions (A).

[0040] When a substrate is transferred to or resides in the vacuum transfer chamber 120 of the substrate processing system 100, a mechanism such as a robot moves the substrate to the vacuum transfer chamber 120 for processing, for example. It is configured to transfer to vacuum chambers adjacent to. The substrate is transferred from vacuum transfer chamber 120 to vacuum chambers 210 and/or other support chambers (not shown) by robot 122 or the like through openings.

[0041] In operating states of the substrate processing system 100, a vacuum state V is maintained inside the substrate processing system 100 except for the load lock chambers 105 and other parts of the substrate processing system 100. inserting and/or removing a substrate before or after processing without affecting the vacuum state V, particularly in the vacuum chambers, vacuum transfer chamber 120 and/or support chambers of the substrate processing system 100; For this purpose, within the load lock chamber, a change from vacuum states (V) to atmospheric pressure states or non-vacuum states (A) and vice versa is possible.

[0042] For transfer between the transfer chamber 120 and an adjacent vacuum chamber, for example vacuum chambers of the load-lock chamber 105 or vacuum chambers of the deposition apparatus 110, slit openings, in particular horizontal slit openings, are provided in the transfer chamber. and adjacent vacuum chambers. As exemplarily shown in FIG. 1 , a maintenance area 115 is provided on one side of the deposition apparatus 110 . The maintenance area is on the side of the deposition apparatus on the opposite side of the slit opening facing the transfer chamber 120 . Thus, the maintenance area 115 may be provided radially outward from the central transfer chamber. A transport path 130 , for example rails, guide rails, guide paths may be provided from a first position of the deposition apparatus 110 to a second position of the maintenance area 115 . One or more components of deposition device 110 may be moved along transport path 130 between deposition device 110 and maintenance area 115 . As indicated by the dotted circle 102 , the substrate processing system 100 may have a footprint for manufacturing within the circle. Additionally, as indicated by dotted circle 104 , a peripheral area for maintenance may be provided between dotted circle 102 and dotted circle 104 .

[0043] According to one embodiment, a substrate processing system for a large area substrate is provided. A substrate processing system includes one or more deposition devices and a transfer chamber according to embodiments of the present disclosure. One or more deposition devices are coupled to the transfer chamber. Additionally, one or more load lock chambers are coupled to the transfer chamber. According to some embodiments, which can be combined with other embodiments described herein, the transfer chamber has a rectangular, pentagonal or hexagonal shape. According to some embodiments, the transfer chamber may be a central transfer chamber. Additionally, the transfer chamber may have a longitudinal layout compared to the concentric layout shown in the figures. For example, the transport chamber has two or more horizontal slit openings, in particular four or more horizontal slit openings. According to some embodiments, the processing device may further include a robot disposed at least partially with the transfer chamber, the robot having a robot arm movable into the adjacent chamber.

[0044] According to yet other embodiments, one or more additional processing chambers may be coupled to a vacuum transfer chamber, for example a central transfer chamber. Specifically, the one or more additional processing chambers include a heating chamber coupled to the transfer chamber, a cooling chamber coupled to the transfer chamber, a pre-clean chamber coupled to the transfer chamber, a storage chamber coupled to the transfer chamber, an inspection chamber coupled to the transfer chamber, and a CVD chamber coupled to the transfer chamber. One or more of the above mentioned chambers of the same type and/or different types may be coupled to the central transfer chamber. The inspection chamber can, for example, measure the thickness of a layer deposited in a previous deposition process or control one or more layer thicknesses before the substrate is unloaded from the processing system. Control of layer thickness may be provided. The cleaning or pre-clean chamber can remove oxides from metal layers, for example, or photoresist residuals from a previous fabrication operation.

[0045] For manufacturing of various applications, at least a first deposition apparatus according to embodiments of the present disclosure and a second deposition apparatus according to embodiments of the present disclosure may be provided. A cluster processing system allows flexible adaptation of various processes by having different processing systems and by the ability to move flexibly between different deposition apparatuses. For example, multiple metal deposition devices may be provided. The metals may be the same metal or may be different metals. For example, deposition devices that deposit the same metal can be used to increase the layer thickness of a particular material layer while maintaining the tact time of the processing system. Additionally, additionally or alternatively, different deposition apparatuses, ie production modules, may be provided with different processes. For example, the different processes may include reactive sputter processes and/or non-reactive sputter processes.

[0046] According to some embodiments, which can be combined with other embodiments described herein, the first deposition device and the second deposition device deposit a layer of the first metal in both the first deposition device and the second deposition device, or , depositing a layer of a first metal and a layer of a second metal, depositing layers with two reactive processes, depositing layers with two non-reactive processes, or depositing layers with a reactive process and a non-reactive process. is configured to

[0047] 2A shows deposition apparatus 110 . The deposition apparatus 110 includes a vacuum chamber 210 . According to some embodiments of the present disclosure, vacuum chamber 210 may include three segments. The three segments may be defined by the function of the segments, i.e., some segments or a portion of a segment and an adjacent segment may be fixedly connected or integrally formed. Separating the vacuum chamber into segments allows cost of ownership to be reduced. In particular, maintenance of the deposition apparatus may be further improved by segmentation according to embodiments of the present disclosure.

[0048] The vacuum chamber 210 as exemplarily shown in FIG. 2A includes a source frame segment 212 . The source frame segment may be a fixed segment in a fixed position relative to the processing system, for example relative to the central transfer chamber. The source frame segments are configured to support a source assembly and/or a source support assembly, respectively. As shown in FIG. 2A, a plurality of sputter cathodes 250 and a plurality of anodes 252 are provided in the source frame segment. Alternatively, one or more other sources may be provided and/or supported by the source support assembly.

[0049] A top lid assembly 214 is provided over the source frame segment 212 . Top lid assembly 214 may be removed from the source frame segment, for example, to maintain components disposed in the top lid assembly and/or to maintain components of a source assembly or source support assembly.

[0050] A substrate handling segment 216 is provided below the source frame segment. The substrate handling segment 216 includes or houses components for substrate handling, substrate alignment, substrate masking, substrate support, and the like. The substrate handling segment has a first horizontal slit opening configured to load and unload substrates into and from the vacuum chamber 210 . The first horizontal slit opening faces the transfer chamber 120 shown in FIG. 1 . A first horizontal slit aperture beam is on a first side of the substrate handling segment.

[0051] The substrate handling segment 216 may have an upper portion and a lower portion, and the lower portion may include a bottom cover assembly. The upper portion of the substrate handling segment 216 includes a first horizontal slit opening. According to some embodiments, which can be combined with other embodiments described herein, the upper portion of the substrate handling segment 216 is fixedly coupled to the source frame segment or integrally formed with the source frame segment 212 . Accordingly, the first horizontal slit opening is at a predetermined position relative to the source assembly. Additionally or alternatively, the first horizontal slit opening remains in a predetermined position relative to the source assembly.

[0052] As shown in FIG. 2A , the vacuum chamber 210 may be supported by a pedestal 218 . The pedestal 218 may include a base frame or three or more stands. In particular, the pedestal can support at least the source frame segment 212 .

[0053] According to some embodiments, a deposition apparatus for large area substrate processing in a cluster processing system is provided. The deposition apparatus includes a vacuum chamber. The vacuum chamber includes a source frame segment, an upper lid assembly over the source frame segment and removable from the source frame segment, and a substrate handling segment below the source frame segment. The substrate handling segment has a first horizontal slit opening configured for loading and unloading substrates, the first horizontal slit opening at a first side of the substrate handling segment. A deposition apparatus includes a source support assembly. For the example of an array of sputter sources, the source support assembly includes a first group of cathode drive units, each cathode drive unit of the first group of cathode drive units configured to rotate a horizontal cylindrical sputter cathode, and a second group. of cathode drive units, wherein each cathode drive unit of the second group of cathode drive units is configured to rotate a horizontal cylindrical sputter cathode, comprising: a first group of cathode drive units and a second group of cathode drive units; are coupled to the source frame segments of the vacuum chamber. The deposition apparatus further includes a substrate support in the substrate handling segment and an actuator coupled to the substrate support to vertically move the substrate support.

[0054] 2A shows a substrate support body 220 and an actuator 222 coupled to the substrate support body 220 . The actuator 222 may be a linear actuator or drive configured to move the substrate support body 220 vertically. For example, FIG. 2A shows the substrate support body 220 in a first position below the upper ends of substrate support pins 320 . The actuator 222 can move the support body 220 to the second position, the upper position, where the substrate support body is positioned over the upper ends of the substrate support pins 320 .

[0055] A substrate disposed on the substrate support pins 320 will be contacted by the substrate support body upon movement of the substrate support body from the first position to the second position. Accordingly, a substrate may be placed on the substrate support body for material deposition by raising the substrate support body from the first position to the second position. Additionally, the substrate may be placed on the substrate support pins 320 by lowering the substrate support body holding the substrate from the second position to the first position, for example after positioning.

[0056] Substrate supports may be used in a processing system, such as a vacuum deposition system, or deposition apparatus 110 illustratively shown in FIGS. 1 , 2A and 2B. A substrate support may be provided to hold the substrates within the vacuum chamber of the processing system. As an example, one or more material layers may be deposited on a substrate while the substrate is supported by a substrate support. According to some embodiments of the present disclosure, which can be combined with other embodiments described herein, the substrate support is a support table provided in a processing chamber of a vacuum processing system, for example a substrate support table or pedestal, e.g. For example, it may be a substrate support pedestal. The support table may be particularly configured for horizontal substrate processing or essentially horizontal substrate processing. For example, a processing chamber including a substrate support may be provided in a cluster system.

[0057] The substrate may be held or supported by a substrate support on the back side, ie, the side of the substrate that does not face the deposition source. The front side of the substrate, i.e. the side of the substrate facing the deposition source, is not covered, for example, by the retaining arrangements of the carrier, so that the material to be deposited may reach areas of the substrate that are otherwise difficult to reach. make it possible In some applications, substrate supports may include electrostatic chucks to hold the substrate on the back side. When loading a substrate onto a substrate support, the substrate may be presented on the electrostatic chuck until electrostatic forces are established. Some embodiments of the present disclosure provide a substrate support having an electrostatic chuck. The electrostatic forces of the electrostatic chuck (ESC) allow cooling gas to be provided between the substrate support and the substrate.

[0058] In the case of vacuum processing or deposition of layers, eg sputtering, in a vacuum chamber, heat transfer for substrate cooling is limited in terms of vacuum. Substrate cooling due to radiation is not critical. Additionally, due to the vacuum atmosphere of the vacuum processing system or vacuum deposition apparatus, heat exchange by convection is also not important. It has been found that the cooling of the substrate is provided primarily by conduction, ie heat conduction. Thus, providing a cooling gas to the back side of the substrate can enhance substrate cooling. Substrate cooling during sputter deposition by a horizontal array of rotatable sputter cathodes has applications that benefit from arrangements that combine with substrate cooling using ESCs.

[0059] For some applications, such as touchscreen panels (TSPs) that include organic layers, a substrate with an organic layer can be sensitive to temperature rises during subsequent substrate processing operations, such as sputtering of additional layers on the substrate. have. For example, a cooling gas such as helium or argon may be provided into a gap between the substrate, eg a glass substrate, and the electrostatic chuck. According to some embodiments, which can be combined with other embodiments described herein, the substrate temperature is provided to be below 100°C, particularly below 80°C. During substrate processing, the power of the sputtering process may be controlled to adjust the substrate temperature to a temperature limit. According to some embodiments, which can be combined with other embodiments described herein, a gas cushion, for example with about 3 to 10 mbar, for example a helium cushion or an argon cushion can be provided. . Heat transfer between the substrate and the plate of the ESC, for example a water-cooled plate, may be improved. According to some embodiments, which can be combined with other embodiments described herein, the substrate support can include water cooling for the substrate receiving surface.

[0060] 3 shows a schematic cross-sectional view of a substrate support 220 according to embodiments described herein. The substrate support may be a substrate support table. The substrate support 220 is configured to support a substrate in a processing chamber. The substrate support 220 includes a substrate support body 340 having a substrate support surface, for example a front surface 342, for supporting a substrate. On the opposite side of the front surface 342, a rear surface 343 is provided. Additionally, the substrate support includes a chuck assembly 320 . Chuck assembly 320 is configured to hold a substrate on a substrate support surface. The chuck assembly may include an electrode assembly 325 for providing electrostatic forces to the substrate. For example, an electrostatic field may be provided by the electrode assembly 325 to act on the substrate to hold the substrate. A substrate may be supported in the processing chamber while held by an electrostatic field.

[0061] According to embodiments described herein, the substrate support 220 includes a substrate support surface, or front surface 342 . The substrate may be held at the substrate support surface by electrostatic forces. According to embodiments, the substrate support may include a plurality of first openings 312 in the substrate support surface. The plurality of first openings may be connected to the gas conduit 310 . A gas conduit may be connected to the gas supply. A gas conduit may be connected to a gas source 360 for providing cooling gas. For example, gas source 360 may be a gas supply or gas tank of a processing system. The gas conduit may include a plurality of channels 316 . Each of the plurality of channels 316 may be opened as one of the plurality of first openings 312 .

[0062] By providing a cooling gas, for example helium or argon, into the gas conduit or channels 316 , the cooling gas may be provided between the substrate supported by the substrate support 220 and the substrate support. Thus, the substrate temperature can be lowered during substrate processing. According to some embodiments, which may be combined with other embodiments described herein, the cooling gas may be selected from the group consisting of helium, argon, and the like.

[0063] According to embodiments described herein, the substrate support can include at least one non-conductive region. At least one non-conductive region may be made of a dielectric material. In particular, the dielectric may be made of a high thermal conductivity dielectric material such as pyrolytic boron nitride, aluminum nitride, aluminum oxide, silicon nitride, alumina or equivalent, but may also be made of materials such as polyimide. The electrode assembly 325 may be embedded in at least one non-conductive region or may be provided on a side surface of the non-conductive region opposite to the substrate support surface.

[0064] According to some embodiments, which can be combined with other embodiments described herein, the substrate support 220 can include one or more voltage sources configured to apply one or more voltages to the plurality of electrodes 322. . In some implementations, one or more voltage sources are configured to ground at least some electrodes of plurality of electrodes 322 . As an example, one or more voltage sources may be configured to apply a first voltage having a first polarity, a second voltage having a second polarity, and/or ground to the plurality of electrodes 322 . According to some embodiments, each electrode of the plurality of electrodes, every second electrode, every third electrode, or every fourth electrode may be connected to a separate voltage source. The term "polarity" refers to electrical polarity, ie, negative (-) and positive (+) polarities. As an example, the first polarity can be negative polarity and the second polarity can be positive polarity, or the first polarity can be positive polarity and the second polarity can be negative polarity. According to some embodiments, which can be combined with other embodiments described herein, the ESC of the substrate support can be a monopolar or bipolar electrostatic chuck.

[0065] According to embodiments, controller 330 may be configured to control one or more voltage sources for applying one or more voltages and/or ground to electrode assembly 125 . The controller 130 may be configured to adjust the chuck assembly, ie the controller may be configured to control electrostatic chucking. Controller 330 may be configured to regulate gas source 360 . According to still other embodiments, which can be combined with other embodiments described herein, the controller can be configured to control or communicate with one or more temperature sensors. According to still other embodiments, which can be combined with other embodiments described herein, the controller 330 as shown in FIG. 3 is a separate controller for the voltage source, gas supply and/or temperature sensors. can be separated

[0066] Some embodiments of the present disclosure allow temperature measurement. Precise temperature control can be provided. According to some embodiments, the ESC is provided with a temperature sensor 350. Thus, for example, substrate measurements may be provided for each substrate loaded onto the ESC without breaking the vacuum. Also furthermore, the cooling efficiency of the cooling gas, eg helium, is maintained. A process recipe can be adapted according to the measured values.

[0067] Cooling of the substrate, such as cooling of at least a portion of the substrate loaded onto the substrate support, may include flowing a cooling gas through a plurality of first openings in the front surface of the substrate support body of the substrate support. The substrate support 220 serves as a table for supporting the substrate during deposition of a layer of material onto the substrate.

[0068] According to some embodiments, a substrate support, for example a substrate support table, is provided for supporting a substrate in a vacuum processing system. The substrate support includes a substrate support body having a front surface for supporting a substrate and a rear surface opposite the front surface. A chuck assembly is provided within the substrate support body or on the rear surface of the substrate support body. The substrate support includes a plurality of first openings in a front surface, the plurality of first openings being in fluid communication with the gas conduit, and a plurality of lift pins passing through the substrate support body and supporting the substrate during loading or unloading. ) and a plurality of second openings configured for them. The substrate support includes a plurality of first protrusions on the front surface, each first protrusion at least partially enclosing a second opening of the plurality of second openings; and a plurality of second protrusions on the front surface configured for temperature measurement. According to some embodiments, a temperature sensor may be provided.

[0069] According to one embodiment of the present disclosure, a method of manufacturing a layer of an electronic device, particularly an optoelectronic device such as a display, is provided. The method includes loading a large area substrate onto a robot arm 154 of a robot 122 disposed at least partially in a central transfer chamber 120 . The method further includes transferring the large area substrate into a deposition apparatus according to one embodiment of the present disclosure. The method further includes sputtering a layer of material on the large area substrate in a stationary deposition process in which a horizontal array of sputter cathodes sputters downward onto the substrate on a substrate support, in particular from a horizontal array of rotatable sputter cathodes.

[0070] According to some embodiments, the method further comprises cooling the substrate to a temperature of less than or equal to 200° C., particularly less than or equal to 100° C., during sputtering. According to some embodiments, the substrate temperature may more particularly be below 80°C. The substrate may be cooled by providing a cooling gas between the front surface of the substrate support body and the substrate. The substrate may be electrostatically chucked to the substrate support to allow a cooling gas pressure of, for example, greater than 1 mbar and/or less than 15 mbar, in particular between 2 mbar and 7 mbar.

[0071] According to one embodiment, a method may include a touch screen panel deposited on a display structure, particularly a display structure comprising organic layers. A touch screen panel is provided by sputtering one or more layers of the touch screen panel onto a display structure that includes one or more organic layers. According to some embodiments, which can be combined with other embodiments described herein, the one or more layers sputtered on the display structure are selected from the group consisting of copper, aluminum, titanium, molybdenum and tungsten. Additionally, oxides, nitrides or oxynitrides of the materials mentioned above may be provided, for example by reactive sputtering.

[0072] A substrate having a display structure with an organic layer can be sensitive to temperature rises during subsequent substrate processing operations, such as sputtering of an additional layer on the substrate. A cooling gas, such as helium, may be provided into the gap between the substrate, such as a glass substrate, and the electrostatic chuck. According to some embodiments, which can be combined with other embodiments described herein, the substrate temperature is provided to be below 100°C, particularly below 80°C. In view of the above, embodiments of the present disclosure have the advantage that a touch screen panel can be directly deposited on a display structure that includes organic layers therein. Thus, the need for a touch screen to be deposited on the second substrate is reduced, where the touch screen is connected to a display.

[0073] According to one embodiment of the present disclosure, a display device is provided. The display device includes a backplane provided on a substrate. The backplane includes a plurality of lines for driving the display structure and pixel electrodes addressed by driving the display structure. The display device further includes one or more organic layers that emit light when driving the pixel electrodes. A touch screen panel is deposited over one or more organic layers disposed over a substrate. The touch panel may include one or more layers having or consisting of a material selected from the group consisting of copper, aluminum, titanium, molybdenum and tungsten.

[0074] A further application of the method for manufacturing a layer of an electronic device, in particular an optoelectronic device such as a display, may be as follows. For larger display sizes, the resistance of the gate lines and signal lines for driving the display is advantageously reduced to compensate for the increased length of the lines. Additionally, some electro-optical devices, such as organic displays, can operate with higher currents (while having lower voltages), even if the energy consumption of displays is beneficially reduced. Gate lines and signal lines of a display or other conductors of a display for providing power to various regions of a display, particularly a large area display, may be fabricated by depositing a structured copper layer to create the lines and/or conductors. have. To reduce the resistance, the layer thickness is increased. Embodiments of the present disclosure configured for a stationary deposition process, for example, having a substrate support in a vacuum chamber below a horizontal array of rotatable sputter cathodes and the horizontal array of sputter cathodes sputtering downward onto a substrate supported on the substrate support. In the deposition apparatus according to the above, copper (Cu) may be deposited by sputtering.

[0075] According to some embodiments, the copper layer may be sputtered to have a thickness of greater than 1 μm, such as greater than 1.1 μm and even up to several microns, such as greater than 6 μm to greater than 11 μm. Sputtering a thick copper layer can cause inherent stress in the layer, resulting in warping or swelling of the substrate. Further processing may be degraded. According to some embodiments, which can be combined with other embodiments described herein, cooling of the substrate can reduce stress in the Cu layer. Thus, thick copper layers can advantageously be sputtered while the substrate cools. In particular for copper layers having a thickness of 3 μm or more, such as 7 μm or more, and more particularly for copper layers having a thickness of 10 μm or less, the reduction of the intrinsic stress is particularly advantageous. A cooling gas, such as helium, may be provided into the gap between the substrate, such as a glass substrate, and the electrostatic chuck. According to some embodiments, which can be combined with other embodiments described herein, the substrate temperature is provided to be below 100°C, particularly below 80°C.

[0076] According to one embodiment of the present disclosure, a display device is provided. The display device includes a backplane provided on a substrate. The backplane includes a plurality of lines for driving the display structure and pixel electrodes addressed by driving the display structure. The backplane includes sputtered copper lines to have a thickness of 1 μm or more. Copper lines are provided by sputtering.

[0077] Referring again to FIGS. 2A and 2B , the support body 220 acts as a table to support the substrate during deposition of a layer of material thereon. When the table is moved to the upper position, i.e., the second position, the substrate may be placed under the edge exclusion mask 230. Small edges of the perimeter of the substrate, for example up to several millimeters, are covered with an edge exclusion mask during material deposition. The edge of the substrate is not covered with the evaporation material. Edge exclusion mask 230 provides edge exclusion on a table supporting a substrate. The edge exclusion mask 230 may be coupled to the substrate handling segment 216 of the vacuum chamber 210 by an edge exclusion support frame.

[0078] According to some embodiments, which may be combined with other embodiments described herein, one or more shields may be provided within vacuum chamber 210 . Shields within the vacuum chamber reduce or prevent coating the inner surfaces of the vacuum chamber 210 or the deposition apparatus 110 with a coating material during operation of the deposition sources. 2A shows side protection shields 242 . Side protective shields may be provided within the source frame segment. Additionally, side protective shields can extend upward into the top cover assembly 214 and downward into the substrate handling segment 216 . Side protective shields may also be provided by several pieces attached to each other. If the pieces are smaller, the side protection shields may be easier to maintain. Maintenance of the side protection shields may include cleaning the side protection shields after a predetermined amount of deposition material has accumulated on the side protection shields.

[0079] 2A also shows a pre-sputter shield 244 . A pre-sputter shield 244 may be provided within the top cover assembly 214 . If the sputter cathode 250 is operated in conjunction with the upward facing magnetron in FIG. 2 , ie to clean the target of the cathode, the pre-sputter shield may be coated with a deposition material. The pre-sputter shield 244 may additionally or alternatively protect the surfaces of the top cover assembly 214 from a spray coating of molecules of deposition material.

[0080] 2A shows an array of sputter cathodes 250, specifically a horizontal array of rotatable sputter cathodes. Sputter cathodes 250 are rotatable sputter cathodes with cylindrical targets. The sputter cathodes 250 extend along an axis of rotation perpendicular to the paper plane of FIG. 2A. A cross-section of the array of sputter cathodes shown in FIG. 2A is provided along one line, the horizontal line, in FIG. 2A. The sputter cathodes of the array of sputter cathodes are provided at the same height. The surfaces of the sputter cathodes or the axis of rotation of the sputter cathode each form a plane, in particular a plane essentially parallel to the support body 220 . Similar to sputter cathodes, anodes may also be provided on the same height. Figure 2a shows the area of the anodes at the same height as the area of the cathodes. Alternatively, the region of anodes may be provided at a different height compared to the array of cathodes. For example, the plane defined by the area of the anodes can be in the plane defined by the array of cathodes, can be between the plane defined by the array of cathodes and top lid assembly 214, or the array of cathodes. It may be between the plane defined by and the support body.

[0081] Figure 2b also shows a deposition apparatus similar to that shown in Figure 2a. The features, details, implementations and embodiments described in connection with FIG. 2A may be similarly applicable to the embodiments described in connection with FIG. 2B. In FIG. 2B , the source assembly or corresponding source support assembly is a first group of rotatable sputter cathodes 250 provided at a first height in the deposition apparatus and a second group of rotatable sputter cathodes 250 provided at a second height in the deposition apparatus. In including sputter cathodes 350, the source assembly may deviate from the embodiments described with respect to FIG. 2A. The second group of rotatable cathodes may include, in particular, a first rotatable sputter cathode 350 at a first edge or edge of the array of sputter cathodes and a second rotatable sputter cathode 350 at an opposite second edge or edge of the array of sputter cathodes. A cathode 350 may be included. The second group of rotatable cathodes may be provided at a lower height compared to the first group of rotatable cathodes. Similarly, cathode drive units and corresponding bearings for supporting the rotatable sputter cathode may be provided at a lower height for the second group of rotatable cathodes compared to the first group of rotatable cathodes.

[0082] According to some embodiments, which can be combined with other embodiments described herein, the source assembly can be provided on a curved surface. In particular, cathode drive units or sputter cathodes at or near the edge of the array may be provided closer to the substrate support. Anodes 352 at or at the edge of the source assembly may be provided at a lower height and closer to the substrate support body, for example. The curved surface may include a straight portion at the center of the sputter cathode array and a bent portion at opposite ends of the sputter cathode array. Additionally, the curved surface may be curved such that the central sputter cathode is further away from the support body 220 compared to the outer sputter cathode.

[0083] According to some embodiments, which can be combined with other embodiments described herein, the first group of cathode drive units is at a different height than the second group of cathode drive units. Additionally, additionally or alternatively, and as exemplarily shown in FIGS. 4 and 5 , a first group of cathode drive units is provided on a side of the source frame segment opposite the first side of the substrate handling segment. do. According to some embodiments, the source support assembly can further include a first group of cathode bearings on an opposite side of the first group of cathode drive units. According to still other implementations, which can be combined with other embodiments of the present disclosure, the source support assembly includes a plurality of anodes.

[0084] According to some embodiments, which can be combined with other embodiments described herein, the source frame segment can support a deposition source, eg a sputter source, in particular a horizontal array of rotatable sputter cathodes. One or more sources may be provided in an array or other pattern. The top lid assembly may include one or more gas passages for process gases. Additionally or alternatively, the substrate support body is movable in essentially vertical and horizontal directions. For example, a process can be measured in situ, and/or process conditions can be controlled to provide layer characteristics according to process specifications.

[0085] 2B shows additional details regarding a vacuum chamber that can be combined with other embodiments described herein. The substrate handling segment 216 of the vacuum chamber 210 includes an upper portion fixedly coupled to or integrally formed with the source frame segment 212 of the vacuum chamber. The lower lid assembly 318 is removably coupled to the vacuum chamber 210 , for example at a flange 316 of the substrate handling segment 216 of the vacuum chamber 210 . As described in more detail below, vacuum chambers generally allow for improved maintenance concepts when the lower lid assembly is removably coupled to the upper portion of the substrate processing segment.

[0086] According to some embodiments, which can be combined with other embodiments described herein, one or more flanges 310 to be connected to a vacuum pump (see vacuum pump 810 in FIG. 8A ) of the substrate handling segment of the vacuum chamber. provided in the fixed part. In particular, one or more flanges may be coupled to the sidewall of the substrate handling segment of the vacuum chamber. Accordingly, a vacuum pump is provided on the side wall of the vacuum chamber 210 . No vacuum chamber is provided below the deposition source array, substrate or substrate support body. Providing vacuum pumps on the side increases the maintenance cycles of the vacuum pumps and provides better separation of the components according to these maintenance cycles, which is described in more detail below.

[0087] Embodiments of the present disclosure relate to static deposition as compared to dynamic deposition, in which case a substrate is continuously moved past a deposition source, for example a line source.

[0088] Embodiments described herein relate in particular to the deposition of materials, for example for display manufacture, on large area substrates. According to some embodiments, large area substrates or carriers supporting one or more substrates may have a size of at least 0.5 m 2 . For example, the deposition system may be GEN 5 corresponding to about 1.4 m2 substrates (1.1 m x 1.3 m), GEN 7.5 corresponding to about 4.29 m2 substrates (1.95 m x 2.2 m), and GEN 7.5 corresponding to about 5.7 m2 substrates (2.2 m x 2.5 m). m), or even GEN 10, corresponding to about 8.7 m2 substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate regions can be similarly implemented. According to still other implementations, half sizes of the substrate generations mentioned above may be processed. Alternatively or additionally, semiconductor wafers may be processed and coated in deposition systems according to the present disclosure.

[0089] According to embodiments described herein, a method provides sputter deposition for positioning of a substrate for a static deposition process. Typically, a distinction can be made between static and dynamic deposition, particularly in the case of large area substrate processing, such as processing of horizontally oriented large area substrates. Dynamic sputtering, i.e., an inline process in which the substrate moves continuously or quasi-continuously adjacent to the deposition source, the process stabilizes before the substrates move into the deposition region and remains constant the next time the substrates pass through the deposition source. It will be easier due to the fact that you can. Mura, which may occur depending on the peculiar position of neighboring sputter cathodes, is avoided by continuous or quasi-continuous movement of the substrate. However, dynamic deposition can have other disadvantages, such as particle generation. This is particularly applicable to TFT backplane deposition. It should be noted that the term static deposition process, which is different compared to dynamic deposition processes, does not preclude any movement of the substrate as understood by those skilled in the art. A static deposition process may include, for example, a static substrate position during deposition, an oscillating substrate position during deposition, an essentially constant average substrate position during deposition, a dithering substrate position during deposition, and/or a substrate position during deposition. It may include a wobbling substrate position of . A static deposition process is also a deposition process in which cathodes are provided in one chamber, i.e., a deposition process in which a predetermined set of cathodes are provided in a chamber, wherein the deposition chamber is deposited relative to neighboring chambers, e.g., a central transfer chamber. It is possible to include a substrate position with a sealed atmosphere, for example by closing valve units separating a chamber from an adjacent chamber during deposition of a layer. Thus, a static deposition process can be understood as a deposition process with a static position of the substrate, a deposition process with an essentially static position, or a deposition process with a partially static position of the substrate. As described herein, a static deposition process can be clearly distinguished from a dynamic deposition process without the need for the substrate position for the static deposition process to have any movement during deposition.

[0090] Reducing or avoiding Mura based on predetermined distances between rotatable sputter cathodes 250 of FIG. 2A or distances between rotatable sputter cathodes 250 and sputter cathodes 350 of FIG. 2B For this purpose, one or more of the following concepts may be provided. The support body 220, which provides a support table during layer deposition on a substrate, may be coupled to actuators to be moved horizontally, i.e. in a left-right direction in FIGS. 2A and 2B. The support body 220, which provides a support table during layer deposition on a substrate, can be vertically moved up and down during layer deposition of material on a substrate. An actuator 222 may be used for such vertical movement. Edge exclusion mask 230 may be moved with the substrate for vertical movement during layer deposition. Movements of the support body may be combined and may additionally or alternatively be provided back and forth. The movement, especially in the horizontal direction, may correspond to the sputter cathode distance or may be a distance smaller than the sputter cathode distance, eg half the sputter cathode distance. Movement of various types of a substrate or substrate support may be referred to herein as substrate wobbling.

[0091] The array of sputter cathodes can be moved horizontally, ie left to right in FIGS. 2A and 2B. For example, an array of sputter cathodes may be moved relative to the source frame segment 212 of the vacuum chamber 210 . The array of sputter cathodes can be vertically moved up and down during layer deposition. Movement of the various types of cathode array (or individual cathodes relative to a source frame segment) may be referred to herein as deposition array wobbling. The horizontal and vertical movements described above may be combined with each other. Both substrate wobbling and deposition array wobbling may be provided. Movement of the substrate and array of sputter cathodes relative to each other can increase the uniformity of the deposited layer and reduce or avoid mura.

[0092] According to still other embodiments, which can be combined with other embodiments described herein, the magnetron in each of the rotatable sputter cathodes is moved from a first position, eg the left position in FIGS. 2A and 2B to a second position; It can be moved by an angle, for example to the right position in FIGS. 2a and 2b, in particular through the center position with the magnetron orientation perpendicular to the support body surface. Magnetron movement may be provided back and forth and may be referred to as magnetron wobbling. The first position may be the first end position of the angular movement and the second position may be the second end position of the angular movement on the opposite side of the center position. According to some embodiments, which can be combined with other embodiments described herein, the movement can be a back and forth movement between the first position and the second position, the magnetron excluding the turning positions, i.e. the two end positions. and is moved continuously. According to other embodiments that may be combined with the embodiments described herein, the magnetron may be moved to a first position and stopped at the first position. Thereafter, the magnetron may be moved to a second position and stopped at the second position. Material deposition can occur in a first position and a second position. Material deposition may be stopped while moving from the first position to the second position or vice versa. According to yet other embodiments, particularly in the case of continuous magnetron movement, the number of cycles to move from the first position to the second position or the number of cycles to move from the second position to the first position deposits one layer on the substrate. It can be synchronized with the deposition time for For example, the number of cycles and the moving speed may be selected such that one cycle multiplied by an integer n or twice the integer n equals the deposition time.

[0093] According to yet other embodiments, different modes of substrate wobbling, deposition array wobbling and/or magnetron wobbling may be combined.

[0094] According to some embodiments, which can be combined with other embodiments described herein, the source support assembly includes a first group of magnetron drive units, each magnetron drive unit driving a magnetron within a horizontal cylindrical sputter cathode. It is configured to move by an angle.

[0095] 4 and 5 show a portion of a central transfer chamber and deposition apparatus according to some embodiments of the present disclosure. The central transfer chamber (see also FIG. 1 ) includes four or more sidewalls 420 , for example six sidewalls as shown in FIG. 4 . Each of the sidewalls may have a horizontal slit opening 422 . 2A shows the robot arm 154 being partially inserted into the vacuum chamber of the deposition apparatus through the horizontal slit opening 416 of the vacuum chamber of the deposition apparatus. The vacuum chamber of the deposition apparatus includes a source frame segment 212 , a top lid assembly 214 and a substrate handling segment 216 . The dashed lines show the separation between the functional parts supporting the deposition source assembly, i.e. the source frame segments, and the functional parts supporting components for substrate handling, substrate alignment, substrate support, substrate masking, etc.

[0096] As shown in FIG. 5 , cathode drive units 540 can be coupled to the source frame segment 212 and operatively coupled to a rotatable sputter cathode for rotation of a cylindrical target. A cathode drive cabinet 440 may be provided adjacent to the source frame segment 212 of the vacuum chamber 210 . In particular, the cathode drive cabinet 440 may be provided on the side of the vacuum chamber opposite the horizontal slit opening 416 . Additionally, a supply cabinet 430 may be provided above the cathode drive cabinet. Supply cabinet 430 and cathode drive cabinet 440 may also be combined with each other. Supply cabinet 430 may include, for example, power sources 530 to provide power to rotatable sputter cathodes 250 .

[0097] According to some embodiments, a deposition apparatus may include one or more power sources selected from the group consisting of or including a DC power source, a pulsed DC power source, and a bipolar pulse power source.

[0098] The supply cabinet 430 may further include cooling units for cooling fluid for the sputter cathodes or other electrical elements for operation of the deposition apparatus. According to some embodiments of the present disclosure, which may be combined with other embodiments described herein, a cathode drive cabinet and a supply cabinet may be provided on the side of the vacuum chamber opposite the central transfer chamber. Thus, easy access from the maintenance area 115 (see FIG. 1) can be provided.

[0099] 4 shows a pedestal 218 on which the vacuum chamber of the deposition apparatus is provided. According to some embodiments, which can be combined with other embodiments described herein, lower lid assembly 318 is provided on movable pedestal 418 . The movable pedestal 418 can be moved along the transport path 130, particularly with the lower lid assembly 318. The movable pedestal can be moved to maintenance area 115 (see FIG. 1). 4 shows support body 220 supported by lower lid assembly 318 . According to some embodiments, which can be combined with other embodiments described herein, a plurality of components can be supported by lower lid assembly 318. Thus, when moving the movable pedestal 418 along the transport path 130, the components supported by the lower lid assembly 318 are moved to the maintenance area 115. Improved maintenance may be provided.

[0100] The movable pedestal, in particular the combination of the movable pedestal 418 and lower cover assembly 318, can be moved similarly to a drawer and includes a plurality of shields, an edge exclusion mask 230, a support body 220, That is, it may include a support table for the substrate, a plurality of lift pins, an actuator 222 configured to move the support body, and the like.

[0101] 6 shows a schematic diagram of a deposition apparatus illustrating another embodiment. Pedestal 218 supports a portion of the vacuum chamber of the deposition apparatus. A top lid assembly 214 is provided on the source frame segment of the vacuum chamber. The pre-sputter shields are provided by a first pre-sputter shield 644 and a second pre-sputter shield 642 . The first pre-sputter shield 644 and the second pre-sputter shield 642 are separated from each other to provide a gas inlet passage for processing such as a sputtering process. A first group of sputter cathodes 250 and a second group of sputter cathodes 350 are shown in FIG. 6 . A horizontal slit opening 416 is schematically shown, and a substrate 650 is provided on substrate support pins 320 . Upon movement of the support body 220 by the actuator 222, the substrate 650 is moved towards the sputter cathodes and towards the edge exclusion mask 230.

[0102] 6 also shows an alignment actuator 620 . Alignment actuator 620 may move substrate 650 horizontally while supported on substrate support pins. Thus, the substrate 650 can be aligned relative to the support body 220 . Alignment of the substrate relative to the support body 220 presents the substrate in a predetermined position such that the edge exclusion mask 230 masks a predetermined portion of the substrate during layer fabrication.

[0103] According to some embodiments, a deposition apparatus as disclosed herein may further include a substrate mask within the substrate handling segment and at least one shield within the substrate handling segment. The maintenance area is provided on a first side of the substrate handling segment, i.e. on a second side of the substrate handling segment opposite to the side of the substrate handling segment that includes the horizontal slit opening, the maintenance area comprising at least a substrate mask and at least one It is configured to receive the shield. As noted above, components may be provided to the maintenance area by movement of the movable pedestal 418 shown in FIG. 6 . Alternatively, components may be provided to the maintenance area by movement of a cart 710 shown in FIGS. 7A and 7B.

[0104] Embodiments of the present disclosure provide a deposition apparatus having an array of rotatable sputter cathodes, in particular, rotatable sputter cathodes having cylindrical targets. The deposition apparatus is configured for static deposition.

[0105] Also additionally, additionally or alternatively, the embodiments relate to an improved deposition apparatus with an improved maintenance concept. The improved maintenance concept considers the functional segments of the vacuum chamber of the deposition apparatus. Functional segments correlate two different maintenance cycles of components within the segments. Thus, one access route is provided for components with short maintenance cycles. At least one other access route is provided for components with longer maintenance cycles. Thus, the overall maintenance concept is improved.

[0106] 7A and 7B illustrate different side views of a deposition apparatus and illustrate options for improved maintenance concepts. The vacuum chamber includes a source frame segment 212 for supporting an array of deposition sources, eg, rotatable sputter cathodes 250 . Additionally, the source frame segment 212 supports the corresponding cathode drive units 540 . A top cover assembly 240 is provided adjacent to and detachably from the source frame segment 212 . A substrate handling segment 216 is provided below the source frame segment 212 . The substrate processing segment is provided with a horizontal slit opening. In the embodiments described with respect to FIGS. 7A and 7B , a maintenance slit opening is provided on the side of the substrate handling segment 216 opposite the horizontal slit opening 416 for loading and unloading of substrates. An arm or handler of the cart 710 can be inserted into the portion of the vacuum chamber corresponding to the substrate handling segment 216 and coupled to one or more of the components provided in the substrate handling segment. These components may include edge exclusion masks, mask shields, and the like. Additionally, support bodies or other components may be coupled to arms or handlers of the cart 710 . After corresponding vertical movement of the cart's arm or handler, the components may be removed from the vacuum chamber and transported by cart 710 along the transport path of maintenance area 115 . 7A and 7B illustrate a support body 220 and an actuator coupled to the support body in a lower position such that the substrate support pins extend above the surface of the support body. Additionally, FIGS. 7A and 7B show the support body 220' in an upper position. It should be understood that this is the same support body at different times during operation, ie in a first position (lower position) and a second position (upper position).

[0107] 8A and 8B illustrate different side views of a deposition apparatus and illustrate additional options for improved maintenance concepts. Figures 8a and 8b correspond to some of the details previously described with respect to Figure 6, and repetition of the description here is avoided. The vacuum chamber includes a source frame segment 212 and a top lid assembly 214 removably connected to the source frame segment. The lower lid assembly is removably coupled to the upper portion of the substrate handling segment 216 . A plurality of components are coupled to the lower lid assembly, such as a support body, substrate table, alignment actuators, substrate support pins, and one or more shields. Components can be moved into maintenance area 115 with movable pedestal 418 . For example, the movable pedestal 418 can have a base frame with rollers 818 and the like.

[0108] According to some embodiments, which can be combined with other embodiments described herein, the substrate handling segment can be fixedly coupled to the source frame segment, or is formed integrally with the source frame segment, and the substrate handling segment is maintenance-free. It has a second horizontal slit opening for inserting an arm of the cart, the second horizontal slit opening on the second side of the substrate processing segment. This is shown, for example, in FIGS. 7A and 7B.

[0109] According to some embodiments, which can be combined with other embodiments described herein, the substrate handling segment is fixedly coupled to the source frame segment or formed integrally with the source frame segment, and from one or more sidewalls, and from the one or more sidewalls. It may include a removable floor covering assembly. The floor covering assembly may be moveable into a maintenance area. For example, the floor covering assembly may include a transport unit, such as a movable pedestal, configured to horizontally move the floor covering assembly between a first position below the source frame segment and a second position in the maintenance area, or vice versa. can According to yet other embodiments, the cart or movable floor covering assembly shown in FIG. 7 can also be moved to another, more remote maintenance area compared to, for example, the maintenance area shown in FIG. 1 .

[0110] According to some embodiments, which can be combined with other embodiments described herein, the transport unit can include a lift function to move the floor covering assembly vertically. Accordingly, the bottom cover assembly can be moved vertically to lower the bottom cover assembly from an operating state in which the vacuum chamber is sealed. Components coupled to the floor covering assembly are lowered with the floor covering assembly such that these components can be moved laterally vertically toward the maintenance area, ie down the lower edge of the sidewalls of the substrate handling segment.

[0111] The deposition apparatus may further include an alignment system configured to move the substrate relative to the substrate support, and a pin array for supporting the substrate over and transferring the substrate onto the substrate support. a floor covering assembly such that one or more components, in particular four or more components, of the substrate support, actuator, substrate mask, at least one shield, alignment system and pin array are movable with the floor covering assembly during operation of the transport unit; coupled to

[0112] 6-8B illustrate a maintenance concept according to some embodiments of the present disclosure in relation to a deposition apparatus including rotatable sputter cathodes and/or corresponding cathode drive units. Maintenance concepts according to embodiments of the present disclosure and deposition apparatuses using the maintenance concepts may also be provided for other deposition sources.

[0113] According to one embodiment, a deposition apparatus for large area substrate processing in a processing system is provided. A deposition apparatus includes a vacuum chamber having a source frame segment, an upper cover assembly over the source frame segment and removable from the source frame segment, and a substrate handling segment below the source frame segment, the substrate handling segment for loading and unloading substrates. and a first horizontal slit opening configured, the first horizontal slit opening being on a first side of the substrate handling segment. The deposition apparatus further includes a source support assembly and/or a source assembly provided within the source frame segment. The deposition apparatus includes a substrate support in a substrate handling segment; and an actuator coupled to the substrate support to move the substrate support vertically, wherein the substrate handling segment is fixedly coupled to or detachable from the one or more sidewalls formed integrally with or integrally with the source frame segment. Possible floor covering assemblies. According to some embodiments, the floor covering assembly is movable into a maintenance area. For example, the floor covering assembly may include a transport unit configured to horizontally move the floor covering assembly between a first position below the source frame segment and a second position in the maintenance area and vice versa. Additionally, the transport unit may have a lift function to move the floor covering assembly vertically. According to some embodiments, which can be combined with other embodiments described herein, the deposition apparatus can further include a substrate mask within the substrate handling segment, and at least one shield within the substrate handling segment. The maintenance area is disposed on a second side of the substrate handling segment opposite the first side of the substrate handling segment, and the maintenance area is configured to receive at least a substrate mask and at least one shield. According to yet other optional embodiments, the alignment system is configured to move the substrate relative to the substrate support, and/or the pin array is configured to support the substrate on the substrate support and transfer the substrate onto the substrate support. One or more, in particular four or more components supported by the lower lid assembly may be moved into the maintenance area together with the lower lid assembly.

[0114] The maintenance concepts and corresponding deposition apparatuses described herein are described in the context of a cluster processing system. Embodiments having a maintenance area next to a deposition apparatus comprising a vacuum chamber having a segment according to the present disclosure - the lower cover assembly may be moved to the vacuum chamber, for example by a transport unit according to embodiments of the present disclosure. Supporting components with a first maintenance cycle that can be removed from the maintenance area into a maintenance area - may also be applicable to an inline processing system.

[0115] 9 shows a flow chart illustrating a method of maintaining a deposition apparatus, particularly for large area substrate processing. The deposition apparatus includes a vacuum chamber having a first horizontal slit opening facing the transfer chamber. According to operation 902, each edge exclusion mask or substrate mask and at least one shield are moved downward, for example, by moving a lid assembly of the vacuum chamber or moving an arm of a cart that reaches the vacuum chamber. The substrate mask and at least one shield are moved toward the first horizontal slit opening, ie, the side of the vacuum chamber opposite the slit opening facing the central transfer chamber of the cluster processing system (see operation 904). At operation 906, maintenance of the substrate mask and at least one shield is performed. The substrate mask and at least one shield are moved toward the first horizontal slit opening in operation 908 . For example, the lower lid assembly can be moved towards the horizontal slit opening and the vacuum chamber of the deposition apparatus sealed to be evacuated for further deposition processes.

[0116] According to some embodiments, the substrate mask and at least one shield are moved by moving the lower lid assembly of the vacuum chamber. According to some embodiments, which can be combined with other embodiments described herein, one or more of the substrate support and actuator coupled to the substrate support, alignment system, and pin array may be moved with the bottom cover assembly of the vacuum chamber. can The maintenance procedures described above may rely on relatively short maintenance cycles. Especially in the case of rotatable sputter cathodes with cylindrical targets, the maintenance cycle of sputter cathodes can be relatively long.

[0117] According to some embodiments, which can be combined with other embodiments described herein, the top lid assembly of the vacuum chamber can be eliminated. The first sputter cathode and/or the first anode may be removed from the top of the vacuum chamber, particularly after removal of the top lid assembly. Removal of the top cover assembly provides access to the source frame segments from above.

[0118] Maintenance may be provided after removal of the first sputter cathode and/or first anode, particularly at one end of the array of sputter cathodes, by having personnel stand in the vacuum chamber, particularly upright within the source frame segment. According to another optional implementation, the second sputter cathode and/or the second anode at opposite second ends of the array of sputter cathodes can be removed to provide maintenance access for personnel at both ends of the sputter cathodes. . After the lower lid assembly is moved, a maintenance platform may be installed below the vacuum chamber. Additional sputter cathodes may be dismantled or maintained from the bottom of the vacuum chamber. Maintenance personnel may occupy a portion of the area previously occupied by either the first sputter cathode or the second sputter cathode already removed from the top of the vacuum chamber.

[0119] According to yet other embodiments, a method of manufacturing a layer of optoelectronic devices is provided as illustrated in FIG. 10 . The method includes loading a large area substrate onto a robot arm of a robot disposed at least partially in a central transfer chamber as illustrated by box 912 . As illustrated by box 914, a large area substrate is transferred into a deposition apparatus according to embodiments of the present disclosure, and a layer of material is deposited, eg, sputtered, on the large area substrate (box 916 ) Reference). According to some embodiments, which can be combined with other embodiments described herein, the substrate is cooled during sputtering to a temperature below 100° C., particularly below 80° C., as illustrated by box 918.

[0120] Various additional embodiments are provided in this disclosure, some of which are listed in the list of items below.

[0121] Item 1. A deposition apparatus for large-area substrate processing in a substrate processing system, comprising: a vacuum chamber, the vacuum chamber comprising: a source frame segment; a top cover assembly over the source frame segment and removable from the source frame segment; and a substrate handling segment under the source frame segment, the substrate handling segment having a first slit opening configured to load and unload a substrate, the first slit opening being at a first side of the substrate handling segment; A deposition apparatus includes a source support assembly provided within a source frame segment; a substrate support in the substrate handling segment; and an actuator coupled to the substrate support to move the substrate support toward the source frame segment or top cover assembly, the substrate handling segment having one or more sidewalls fixedly coupled to or integrally formed with the source frame segment. field; and a bottom cover assembly removable from one or more sidewalls.

[0122] Item 2. The deposition apparatus of item 1, wherein the bottom cover assembly is movable into the maintenance area.

[0123] Item 3. The floor covering assembly of item 2, comprising a transport unit configured to horizontally move the floor covering assembly between a first position below the source frame segment and a second position in the maintenance area, and vice versa. , deposition apparatus.

[0124] Item 4. The deposition apparatus according to item 3, wherein the transport unit has a lift function for vertically moving the bottom cover assembly.

[0125] Item 5. The substrate mask according to any one of items 2 to 4, in the substrate handling segment; and at least one shield in the substrate handling segment, wherein the maintenance area is configured to receive at least the substrate mask and the at least one shield, in particular the maintenance area is a substrate handling area opposite the first side of the substrate handling segment. A deposition apparatus provided on the second side of the segment.

[0126] Item 6. The alignment system according to any one of items 1 to 5, configured to move the substrate relative to the substrate support; and a pin array for supporting the substrate on the substrate support and transferring the substrate onto the substrate support.

[0127] Item 7. The method according to any one of items 1 to 6, wherein at least one of the substrate support, actuator, substrate mask, at least one shield, alignment system, and pin array are movable with the bottom covering assembly upon operation of the transport unit. A deposition apparatus coupled to the bottom cover assembly to

[0128] Item 8. A deposition apparatus for large-area substrate processing in a substrate processing system, comprising: a vacuum chamber, the vacuum chamber comprising: a source frame segment; a top cover assembly over the source frame segment and removable from the source frame segment; and a substrate handling segment under the source frame segment, the substrate handling segment having a first slit opening configured to load and unload a substrate, the first slit opening being at a first side of the substrate handling segment; The deposition apparatus further includes a source support assembly comprising: a first group of cathode drive units, each cathode drive unit of the first group of cathode drive units being configured to rotate a horizontal cylindrical sputter cathode; and a second group of cathode drive units, wherein each cathode drive unit of the second group of cathode drive units is configured to rotate a horizontal cylindrical sputter cathode, wherein the first group of cathode drive units and the second group the cathode drive units of are coupled to the source frame segment of the vacuum chamber; The deposition apparatus includes a substrate support in a substrate handling segment; and an actuator coupled to the substrate support towards the source frame segment or top lid assembly.

[0129] Item 9. The deposition apparatus according to item 8, wherein the first group of cathode drive units is at a different height than the second group of cathode drive units.

[0130] Item 10. The deposition apparatus of item 8 or 9, wherein the first group of cathode drive units is provided on a side of the source frame segment opposite to the first side of the substrate handling segment.

[0131] Item 11. The deposition apparatus of item 10, wherein the source support assembly further comprises a first group of cathode bearings on an opposite side of the first group of cathode drive units.

[0132] Item 12. The source support assembly of any of items 8 to 11, further comprising a first group of magnetron drive units, each magnetron drive unit configured to move a magnetron by an angle within the horizontal cylindrical sputter cathode. configured, the deposition apparatus.

[0133] Item 13. The deposition apparatus of any of items 8-12, wherein the source support assembly further comprises a plurality of anodes.

[0134] Item 14. The method according to any one of items 8 to 13, comprising: a DC power source; pulsed DC power supply; and one or more power sources selected from the group consisting of bipolar pulse power sources.

[0135] Item 15. The substrate mask according to any one of items 8 to 14, in the substrate handling segment; at least one shield in the substrate handling segment; and in particular a maintenance area on a second side of the substrate handling segment opposite the first side of the substrate handling segment, wherein the maintenance area is configured to receive at least the substrate mask and the at least one shield. .

[0136] Item 16. The method of item 15, wherein the substrate handling segment is fixedly coupled to or integrally formed with the source frame segment, the substrate handling segment having a second slit opening for inserting an arm of the maintenance cart, The deposition apparatus of claim 1 , wherein the two slit opening is on a second side of the substrate handling segment.

[0137] Item 17. The substrate handling segment of item 15, further comprising: one or more sidewalls fixedly coupled to or integrally formed with the source frame segment; and a bottom cover assembly removable from one or more sidewalls.

[0138] Item 18. The deposition apparatus of item 17, wherein the bottom cover assembly is movable into the maintenance area.

[0139] Clause 19. The floor covering assembly of clause 17 or 18, wherein the floor covering assembly comprises a transport unit configured to horizontally move the floor covering assembly between a first position below the source frame segment and a second position in the maintenance area and vice versa. , deposition apparatus.

[0140] Item 20. The deposition apparatus according to item 19, wherein the transport unit has a lift function to vertically move the bottom covering assembly.

[0141] Item 21. The alignment system according to any one of items 17 to 20, configured to move the substrate relative to the substrate support; and a pin array for supporting the substrate on the substrate support and transferring the substrate on the substrate support.

[0142] Item 22. The method according to any one of items 17 to 21, wherein at least one of the substrate support, actuator, substrate mask, at least one shield, alignment system, and pin array are movable with the bottom covering assembly upon operation of the transport unit. A deposition apparatus coupled to the bottom cover assembly to

[0143] Item 23. The method of any one of items 17 to 21, wherein at least four of the substrate support, actuator, substrate mask, at least one shield, alignment system, and pin array are movable with the bottom cover upon operation of the transport unit. A deposition apparatus coupled to the bottom cover assembly to

[0144] Item 24. A substrate processing system for large area substrates, comprising: a transfer chamber; one or more deposition devices according to any one of items 1 to 23 coupled to the transfer chamber; and one or more loadlock chambers coupled to the transfer chamber.

[0145] Item 25. The substrate processing system of item 24, wherein the transfer chamber has a rectangular, pentagonal or hexagonal shape.

[0146] Item 26. The substrate processing system of item 24 or 25, wherein the transfer chamber has four or more slit openings.

[0147] Item 27. The substrate processing system of any of items 24-26, further comprising a robot at least partially disposed in the transfer chamber, wherein the robot has a robot arm movable into an adjacent chamber.

[0148] Item 28. A method of maintaining a deposition apparatus for large area substrate processing, wherein the deposition apparatus has a vacuum chamber having a first slit opening facing the transfer chamber, wherein the substrate mask and at least one shield are disposed in the first slit opening moving towards the side of the vacuum chamber on the opposite side of the; performing maintenance of the substrate mask and at least one shield; and moving the substrate mask and at least one shield toward the first slit opening.

[0149] Item 29. The method of item 28, wherein moving the substrate mask and the at least one shield is provided by moving a lower lid assembly of the vacuum chamber.

[0150] Item 30. The method of item 29, further comprising moving one or more of the substrate support, an actuator coupled to the substrate support, an alignment system, and a pin array with the bottom cover assembly of the vacuum chamber.

[0151] Item 31. The method of any one of items 28 to 30, further comprising: removing an upper lid assembly of the vacuum chamber from the vacuum chamber; and disassembling the first sputter cathode from the top of the vacuum chamber.

[0152] Item 32. The method of item 31, comprising: installing a maintenance platform below the vacuum chamber after the lower cover assembly is moved; and dissolving additional sputter cathodes from the bottom of the vacuum chamber.

[0153] Item 33. A method of manufacturing a layer of an optoelectronic device, comprising: loading a large area substrate onto a robot arm of a robot disposed at least partially in a central transfer chamber; transferring the large-area substrate into the deposition apparatus according to any one of items 1 to 23; and sputtering a layer of material onto the large area substrate.

[0154] In view of the foregoing, one or more of the following advantages may be provided by embodiments of the present disclosure. An array of rotatable sputter cathodes may be provided that are sputtered downward onto the substrate. Applications involving temperature control of the substrate, in particular applications with a horizontal array of rotatable sputter cathodes sputtering downward onto a substrate supported on a substrate support in a stationary deposition process and an ESC for improved substrate cooling are as described above. can be provided together. Access to the components of the deposition apparatus may be provided along the length of maintenance cycles of the components. Easy access to the deposition apparatus can be provided, and maintenance can be improved.

[0155] While the foregoing relates to embodiments of the present disclosure, other and additional embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, which scope is covered by the following claims. It is decided.

Claims (19)

As a deposition apparatus for large-area substrate processing in a substrate processing system,
vacuum chamber;
a horizontal array of rotatable sputter cathodes configured with cylindrical targets, the horizontal array of rotatable sputter cathodes provided in the vacuum chamber; and
a substrate support in the vacuum chamber below the horizontal array of rotatable sputter cathodes, the substrate support configured for a stationary deposition process wherein the horizontal array of sputter cathodes sputters downward onto a substrate on the substrate support. ,
deposition device. According to claim 1,
The substrate support,
a substrate support body having a front surface for supporting the substrate and a rear surface opposite to the front surface; and
A chuck assembly disposed within the substrate support body or disposed on a rear surface of the substrate support body.
deposition device. According to claim 2,
The substrate support,
gas conduit;
Further comprising a plurality of first openings in front of the substrate support body and connected to the gas conduit.
deposition device. According to claim 2 or 3,
The substrate support further comprises a temperature sensor configured to measure a substrate temperature.
deposition device. According to claim 4,
wherein the temperature sensor is at least partially provided on the substrate support body;
deposition device. According to claim 4 or 5,
a gas source coupled to the gas conduit; and
further comprising a controller connected to the gas source and coupled to the temperature sensor for regulating the gas source based on the substrate temperature.
deposition device. According to any one of claims 1 to 6,
The vacuum chamber,
source frame segment;
an upper lid assembly over the source frame segment and removable from the source frame segment; and
a substrate handling segment below the source frame segment, the substrate handling segment having a first slit opening configured to load and unload substrates, the first slit opening being on a first side of the substrate handling segment; ;
The deposition device,
a source support assembly provided within the source frame segment for supporting the horizontal array of rotatable sputter cathodes;
a substrate support within the substrate handling segment; and
an actuator coupled to the substrate support to move the substrate support toward the source frame segment or the top lid assembly;
The substrate handling segment,
one or more sidewalls fixedly coupled to the source frame segment or integrally formed with the source frame segment; and
a floor covering assembly that is removable from the one or more sidewalls;
deposition device. According to claim 7,
wherein the floor covering assembly is movable into a maintenance area;
deposition device. According to claim 8,
wherein the floor covering assembly includes a transport unit configured to horizontally move the floor covering assembly between a first position below the source frame segment and a second position in the maintenance area, and vice versa.
deposition device. According to any one of claims 7 to 9,
Further comprising a pin array for supporting the substrate on the substrate support and transferring the substrate on the substrate support,
deposition device. According to claim 10,
wherein at least one of the substrate support, the actuator, the substrate mask, the at least one shield, the alignment system, and the pin array are coupled to the floor covering assembly to be movable with the floor covering assembly upon operation of the transport unit.
deposition device. As a substrate processing system for a large area substrate,
transfer chamber;
one or more deposition devices according to any one of claims 1 to 11 coupled to the transfer chamber; and
one or more load lock chambers coupled to the transfer chamber;
Substrate processing system. A method of manufacturing a layer of an electronic device comprising:
loading a large area substrate onto a robot arm of a robot disposed at least partially in a central transfer chamber;
transferring the large-area substrate into the deposition apparatus according to any one of claims 1 to 11; and
sputtering a layer of material on the large area substrate.
Way. According to claim 13,
cooling the substrate during sputtering to a temperature of less than or equal to 200° C., particularly less than or equal to 100° C., more particularly less than or equal to 80° C.
Way. According to claim 14,
The layer is a metal layer deposited on an organic layer, in particular a metal layer for a touch screen panel,
Way. According to claim 14,
wherein the layer is a copper layer having a thickness of at least 900 nm, in particular at least 1.1 μm,
Way. According to claim 14,
wherein the layer is a copper layer having a thickness of at least 3 μm, in particular at least 7 μm, more particularly at least 10 μm,
Way. As a display device,
a backplane provided on a substrate, the backplane having a plurality of lines for driving a display structure and pixel electrodes addressed by driving the display structure;
one or more organic layers emitting light when driving the pixel electrodes;
comprising a touch screen panel disposed over the one or more organic layers by sputtering;
display device. As a display device,
A backplane provided on a substrate, the backplane having a plurality of lines for driving a display structure and pixel electrodes addressed by driving the display structure, the backplane comprising sputtered copper lines to have a thickness of 1 μm or more including,
display device.

Images