KR20220137203A - Deposition apparatus - Google Patents

Abstract

A deposition device can comprise: a gas injection unit having a plurality of linear nozzle units arranged in parallel to each other in a first direction; and a substrate transfer unit reciprocating to transfer a substrate in the first direction in a lower portion of the gas injection unit. Each of the linear nozzle units can comprise: a gas supply unit supplying a process gas; and an electrode extended in a second direction which is perpendicular to the first direction and injecting the process gas received from the gas supply unit to the substrate through a nozzle formed therein. A distance between a center portion of the electrode and the substrate can be different from a distance between both longitudinal side portions of the electrode and the substrate.

Description

Deposition apparatus {DEPOSITION APPARATUS}

The present invention relates to a deposition apparatus. More particularly, the present invention relates to a deposition apparatus for depositing a thin film by spraying a process gas onto a target substrate.

The flat panel display is being used as a display device that replaces the cathode ray tube display due to characteristics such as light weight and thinness. Representative examples of such flat panel display devices include a liquid crystal display device and an organic light emitting display device.

In manufacturing the display device, a chemical vapor deposition (CVD) process and atomic layer deposition (ALD) process for depositing a thin film by spraying a process gas onto the surface of a target substrate, and a process gas A plasma enhanced chemical vapor deposition (PECVD) process and a plasma enhanced atomic layer deposition (PEALD) process, which apply a high voltage while spraying to cause the deposition to proceed in a plasma state, are used. have. On the other hand, in the case of the PECVD process and the PEALD process, the uniformity of the thin film thickness may be reduced depending on the plasma characteristics of the process gas material, which intensifies as the size of the target substrate increases.

An object of the present invention is to provide a deposition apparatus capable of depositing a thin film with a uniform thickness.

However, the present invention is not limited by the above objects, and may be variously expanded without departing from the spirit and scope of the present invention.

In order to achieve the above object of the present invention, a deposition apparatus according to exemplary embodiments of the present invention includes a gas injection unit including a plurality of linear nozzle units arranged side by side in a first direction, and the gas injection unit. It may include a substrate transfer unit for reciprocating the substrate along the first direction from the bottom. Each of the linear nozzle units includes a gas supply unit for supplying a process gas, an electrode extending in a second direction perpendicular to the first direction, and spraying the process gas supplied from the gas supply unit to the substrate through a nozzle formed therein. may include A distance between the central portion of the electrode and the substrate may be different from a distance between both sides of the electrode in a longitudinal direction and the substrate.

In an embodiment, the distance between the electrode and the substrate may increase as the distance from the central portion of the electrode increases.

In an embodiment, the lower surface of the electrode may be a curved surface in which the central portion is convex downward.

In an embodiment, the thickness of the electrode may become smaller as it moves away from the central portion of the electrode.

In an embodiment, the distance between the electrode and the substrate may decrease as the distance from the central portion of the electrode increases.

In one embodiment, the lower surface of the electrode may be a curved surface in which the central portion is concave upward.

In an embodiment, the thickness of the electrode may increase as the distance from the central portion of the electrode increases.

In an embodiment, a width of the central portion of the electrode in the first direction may be the same as a width of the both sides of the electrode in the first direction.

In an embodiment, the electrodes included in each of the linear nozzle units may have the same cross-sectional shape.

In an embodiment, the distance between the central portion of the electrodes included in each of the linear nozzle units and the substrate may be the same.

In order to achieve the above object of the present invention, a deposition apparatus according to exemplary embodiments of the present invention includes a gas injection unit including a plurality of linear nozzle units arranged side by side in a first direction, and the gas injection unit. It may include a substrate transfer unit for reciprocating the substrate along the first direction from the bottom. The first linear nozzle part extends in a first gas supply part supplying a first process gas and in a second direction perpendicular to the first direction, a central part is spaced apart from the substrate by a first distance, and is supplied from the first gas supply part and a first electrode that injects the received first process gas to the substrate through a first nozzle formed therein. The first linear nozzle part and a second linear nozzle part adjacent in the first direction extend in the second direction and a second gas supply part supplying a second process gas different from the first process gas, and a central part is removed from the substrate and a second electrode spaced apart by a second distance greater than the first distance and spraying the second process gas supplied from the second gas supply unit to the substrate through a second nozzle formed therein.

In an embodiment, the distance between the first electrode and the substrate may increase as the distance from the central portion of the first electrode increases. The distance between the second electrode and the substrate may decrease as the distance from the central portion of the second electrode increases.

In an embodiment, the lower surface of the first electrode may be a curved surface in which the central portion is convex downward. A lower surface of the second electrode may have a curved surface in which the central portion is concave upward.

In an embodiment, the thickness of the first electrode may decrease as it moves away from the central portion of the first electrode. The thickness of the second electrode may increase as the distance from the central portion of the second electrode increases.

In an embodiment, a third gas supplying a third process gas different from the first process gas and the second process gas to the third linear nozzle part adjacent to the first linear nozzle part in a direction opposite to the first direction a supply unit and extending in the second direction, a central portion being spaced apart from the substrate by a third distance greater than the first distance and smaller than the second distance, the third process gas supplied from the third gas supply unit is supplied to the inside It may include a third electrode that is sprayed onto the substrate through the formed third nozzle.

In an embodiment, a distance between the central portion of the third electrode and the substrate may be the same as a distance between both sides of the third electrode in a longitudinal direction and the substrate.

In an embodiment, a lower surface of the third electrode may be flat.

In an embodiment, a thickness of the central portion of the third electrode may be the same as a thickness of both sides of the third electrode in the longitudinal direction.

In an embodiment, the distance between the first electrode and the substrate may increase as the distance from the central portion of the first electrode increases. A distance between the central portion of the second electrode and the substrate may be the same as a distance between both sides of the second electrode in a longitudinal direction and the substrate.

In an embodiment, a distance between the central portion of the first electrode and the substrate may be the same as a distance between both sides of the first electrode in a longitudinal direction and the substrate. The distance between the second electrode and the substrate may decrease as the distance from the central portion of the second electrode increases.

The deposition apparatus according to the embodiments of the present invention may include linear nozzle units arranged in parallel in the first direction. Each of the linear nozzle units may include an electrode extending in a second direction perpendicular to the first direction and injecting the process gas to the substrate through nozzles formed therein by exciting the process gas into a plasma state. A distance between the central portion of the electrode and the substrate may be different from a distance between both sides of the electrode in the longitudinal direction and the substrate. Accordingly, even if the substrate is enlarged, a thin film having a uniform thickness can be deposited on the substrate.

However, the effects of the present invention are not limited to the above-described effects, and may be variously expanded without departing from the spirit and scope of the present invention.

1 is a perspective view schematically illustrating a deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line I-I' of FIG. 1 .
3 is a perspective view illustrating a first electrode included in the deposition apparatus of FIG. 2 .
FIG. 4 is a cross-sectional view taken along line II-II' of FIG. 3 .
5 is a cross-sectional view schematically illustrating a deposition apparatus according to another exemplary embodiment of the present invention.
6 is a perspective view illustrating a second electrode included in the deposition apparatus of FIG. 5 .
7 is a cross-sectional view taken along line III-III' of FIG. 6 .
8 is a cross-sectional view schematically illustrating a deposition apparatus according to another exemplary embodiment of the present invention.
9 is a cross-sectional view illustrating a third electrode included in the deposition apparatus of FIG. 8 .
10 to 13 are cross-sectional views schematically illustrating deposition apparatuses according to embodiments of the present invention.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The same or similar reference numerals are used for the same components in the accompanying drawings.

1 is a perspective view schematically showing a deposition apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line I-I' of FIG. 1 , and FIG. 3 is a first deposition apparatus included in the deposition apparatus of FIG. It is a perspective view showing an electrode, and FIG. 4 is a cross-sectional view taken along line II-II' of FIG. 3 .

1 to 4 , the deposition apparatus 10 according to an embodiment of the present invention may include a gas injection unit 100 and a substrate transfer unit 200 . The gas injection unit 100 and the substrate transfer unit 200 may be accommodated in a deposition chamber (not shown).

The substrate transfer unit 200 supports a substrate SUB to be deposited and may transfer the substrate SUB in the deposition chamber. For example, the substrate transfer unit 200 may reciprocally transfer the substrate SUB in the first direction DR1 under the gas injection unit 100 .

The gas ejection unit 100 may form a thin film on the substrate SUB by injecting a process gas toward the substrate SUB reciprocally transferred from the lower side in the first direction DR1 . Depending on the type of the process gas, the injection method, whether a high voltage is applied, etc., the deposition apparatus 10 is an atomic layer deposition (ALD) process, a plasma enhanced atomic layer deposition (PEALD) process, chemical It may be applied to various deposition processes such as a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, and the like. For example, when an ALD process or a PEALD process is applied, the linear nozzle units included in the gas ejection unit 100 may inject the source gas and the process gas, respectively. When a CVD process or a PECVD process is applied, the linear nozzle units may each inject a mixed gas.

In an embodiment, the gas injection unit 100 may include a plurality of first linear nozzle units 110 and a plurality of exhaust units 120 .

The first linear nozzle units 110 may be arranged in parallel in the first direction DR1 . Each of the first linear nozzle units 110 may extend in a second direction DR2 perpendicular to the first direction DR1 . Although it is illustrated in FIG. 2 that the six first linear nozzle units 110 are arranged side by side in the first direction DR1 , the number of the first linear nozzle units 110 is not limited thereto. For example, two to five, or seven or more first linear nozzle units 110 may be disposed in the gas injection unit 100 .

Each of the first linear nozzle units 110 may inject a first process gas G1 for forming a thin film on the substrate SUB to the substrate SUB. Here, the first process gas G1 is a process gas having a characteristic in which a thin film having a relatively thin thickness is formed in the central portion of the first linear nozzle unit 110 in the longitudinal direction (the second direction DR2 ) than at both sides. can be This will be described later in detail.

In an embodiment, the first linear nozzle units 110 may inject different first process gases G1 to the substrate SUB, respectively. In another embodiment, at least some of the first linear nozzle units 110 may inject the same first process gas G1 to the substrate SUB.

Specifically, when the deposition apparatus 10 is applied to an ALD process or a PEALD process, for example, the first first linear nozzle unit 110 from the left jets the first source gas, and the second first linear nozzle unit 110 . Reference numeral 110 may inject a first reaction gas to form a first thin film in response to the first source gas. The third first linear nozzle unit 110 from the left injects a second source gas, and the fourth first linear nozzle unit 110 reacts to the second source gas to form a second reaction gas to form a second thin film. can be sprayed. A fifth first linear nozzle unit 110 from the left injects a third source gas, and a sixth first linear nozzle unit 110 reacts to the third source gas to form a third reaction gas to form a third thin film. can be sprayed. In this case, when the substrate SUB moves from left to right and passes under the first linear nozzle units 110 for spraying process gas, the first thin film, the second thin film, and the second thin film are formed on the substrate SUB. 3 thin films may be sequentially stacked.

As another example, the odd-numbered first linear nozzle units 110 from the left may inject the first source gas, and the even-numbered first linear nozzle units 110 may inject the first reaction gas. In this case, the first thin film having a relatively large thickness may be formed on the substrate SUB.

For example, when the deposition apparatus 10 is applied to a CVD process or a PECVD process, the odd-numbered first linear nozzle units 110 from the left spray a first mixed gas forming a fourth thin film, and the even-numbered first The linear nozzle units 110 may inject the second mixed gas forming the fifth thin film. In this case, the fourth thin film and the fifth thin film may be alternately stacked on the substrate SUB. However, this is exemplary, and the present invention is not limited thereto.

Each exhaust unit 120 may be disposed around the first linear nozzle unit 110 . The exhaust unit 120 may be connected to an exhaust pump and the like to exhaust by-products or excess process gas separated from the substrate SUB to the outside. The exhaust unit 120 may prevent the first process gas G1 injected from each of the first linear nozzle units 110 from moving toward the adjacent first linear nozzle unit 110 . For example, each exhaust unit 120 may be disposed to surround each of the first linear nozzle units 110 on a plane.

In an embodiment, the deposition apparatus 10 may further include a plurality of curtain gas ejectors 130 . Each curtain gas ejection unit 130 is disposed around the first linear nozzle unit 110 , and may inject the curtain gas toward the substrate SUB. The curtain gas may be a gas that does not react with the first process gas G1 injected from the first linear nozzle units 110 , for example, an inert gas such as argon (Ar) gas, nitrogen (N ₂ ) gas, or the like.

For example, each of the curtain gas injection units 130 may be disposed to surround each of the first linear nozzle units 110 on a plane. The curtain gas injected from each of the curtain gas injection units 130 is each first linear so that the first process gas G1 injected from the first linear nozzle unit 110 is not scattered around and mixed with other process gases. It may serve as a curtain surrounding the nozzle unit 110 . Accordingly, even if the first linear nozzle units 110 simultaneously inject different process gases to the substrate SUB, the respective process gases may not be mixed.

In an embodiment, each of the first linear nozzle units 110 may include a first gas supply unit 112 and a first electrode 114 .

The first gas supply unit 112 may supply the first process gas G1 . For example, the first gas supply unit 112 may transfer the first process gas G1 supplied from the outside to the first electrode 114 .

The first electrode 114 may be disposed under the first gas supply unit 112 , and may penetrate the first process gas G1 supplied from the first gas supply unit 112 to be sprayed onto the substrate SUB.

The first electrode 114 may extend in the second direction DR2 . A first nozzle 116 may be formed inside the first electrode 114 . The first nozzle 116 may be formed to penetrate the first electrode 114 in a thickness direction (eg, a third direction DR3 perpendicular to the first direction DR1 and the second direction DR2 ). For example, as shown in FIG. 3 , the first nozzles 116 in the form of through-holes extending in the third direction DR3 may be arranged in two rows along the second direction DR2 . However, this is exemplary, and the shape and arrangement of the first nozzle 116 of the present invention are not limited thereto. For example, the plurality of first nozzles 116 may have one or three or more columns and may be arranged in the second direction DR2 . As another example, one first nozzle 116 may extend long in the second direction DR2 and may be formed to pass through the first electrode 114 in the third direction DR3 .

The first electrode 114 may selectively convert the first process gas G1 supplied from the first gas supply unit 112 into a plasma state and spray it onto the substrate SUB. For example, when an RF power source (not shown) is turned on and a high voltage is applied to the first electrode 114 , the first process gas G1 passing through the first electrode 114 is excited into a plasma state and the substrate SUB ) can be sprayed. On the contrary, when the RF power is turned off and a high voltage is not applied to the first electrode 114 , the first process gas G1 passing through the first electrode 114 is not excited to a plasma state and the substrate SUB is not excited. can be sprayed with

As shown in FIG. 4 , the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB is both sides of the first electrode 114 in the longitudinal direction (the second direction DR2 ). It may be different from the distance d2 between the part 114b and the substrate SUB. In one embodiment, the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB is the distance d1 between the opposite side portions 114b of the first electrode 114 and the substrate SUB. d2) may be smaller. For example, the distance between the first electrode 114 and the substrate SUB may increase as the distance from the central portion 114a of the first electrode 114 increases. In this case, the lower surface of the first electrode 114 may be a curved surface in which the central portion 114a is convex downward.

In an embodiment, the thickness t1 of the central portion 114a of the first electrode 114 may be different from the thickness t2 of the side portions 114b. For example, the thickness t1 of the central portion 114a of the first electrode 114 may be greater than the thickness t2 of the side portions 114b. For example, the thickness of the first electrode 114 may decrease as it moves away from the central portion 114a. In this case, the upper surface of the first electrode 114 may be a substantially flat plane, and the lower surface of the first electrode 114 may be a curved surface in which the central portion 114a is convex downward. In addition, the lengths of the first nozzles 116 penetrating the first electrode 114 in the thickness direction (the third direction DR3 ) become smaller as the distance from the central portion 114a of the first electrode 114 increases. can

In one embodiment, as shown in FIG. 3 , the first electrode 114 may have substantially the same width in the first direction DR1 . That is, the width of the central portion 114a of the first electrode 114 in the first direction DR1 may be substantially the same as the width of the side portions 114b in the first direction DR1 .

In exemplary embodiments, various process gases may be used according to a type of a thin film to be formed on the substrate SUB or a deposition method. On the other hand, in the case of a PEALD process or PECVD process using plasma, the central portion 114a and both sides in the longitudinal direction (second direction DR2) of the first electrode 114 according to the plasma characteristics of the material constituting the process gas. Each of the thin films deposited in the portion 114b may have a different thickness. Also, as the size of the substrate SUB increases (eg, as the width of the substrate SUB increases in the second direction DR2 ), the difference in the thickness may further increase.

The first process gas G1 may include a material having a characteristic in which a thin film having a relatively thin thickness is formed in the central portion 114a than in the both sides 114b in the second direction DR2 of the first electrode 114 . can As a specific example, when the first process gas G1 includes an oxygen-based reaction gas, if the distance between the first electrode 114 and the substrate SUB is constant, the thickness of the thin film formed in the center of the substrate SUB is It may be smaller than the thickness of the thin film formed on both sides in the second direction DR2 . However, according to the deposition apparatus 10 according to embodiments of the present invention, the lower surface of the first electrode 114 and the substrate SUB from both sides 114b to the central portion 114a of the first electrode 114 . The distance between them may be small. Accordingly, a thin film having a uniform thickness may be formed on the central portion of the substrate SUB and on both sides in the second direction DR2 . In addition, by adjusting the difference between the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB and the distance d2 between the side portions 114b and the substrate SUB, a more uniform A thin film of thickness may be formed.

In an embodiment, the first electrodes 114 included in each of the plurality of first linear nozzle units 110 may have the same cross-sectional shape. For example, each of the first electrodes 114 may have a cross-sectional shape in which a lower surface is convex downward as shown in FIG. 4 . In this case, the distance between the central portion 114a of the first electrodes 114 arranged in parallel along the first direction DR1 and the substrate SUB is equal to each other, and both sides of the first electrodes 114 ( The distance between the 114b and the substrate SUB may be equal to each other.

5 is a cross-sectional view schematically showing a deposition apparatus according to another embodiment of the present invention, FIG. 6 is a perspective view illustrating a second electrode included in the deposition apparatus of FIG. 5, and FIG. 7 is a line III-III′ of FIG. It is a cross-sectional view taken along For example, the cross-sectional view of FIG. 5 may correspond to the cross-sectional view of FIG. 2 .

5 to 7 , the deposition apparatus 11 according to another embodiment of the present invention may include a gas injection unit 101 and a substrate transfer unit 200 . The gas injection unit 101 may include a plurality of second linear nozzle units 150 and a plurality of exhaust units 120 . The deposition apparatus 11 according to another exemplary embodiment described with reference to FIGS. 5 to 7 is according to the exemplary embodiment described with reference to FIGS. 1 to 4 except for the configuration of the second linear nozzle unit 150 . It may be substantially the same as or similar to the deposition apparatus 10 . Accordingly, overlapping descriptions will be omitted or simplified.

The second linear nozzle units 150 may be arranged in parallel in the first direction DR1 . Each of the second linear nozzle units 150 may extend in the second direction DR2 .

Each of the second linear nozzle units 150 may inject a second process gas G2 for forming a thin film on the substrate SUB to the substrate SUB. The second process gas G2 may be a process gas having a characteristic in which a thin film having a relatively thick thickness is formed in the central portion than at both sides in the longitudinal direction (the second direction DR2) of the second linear nozzle unit 150 . have. For example, the second process gas G2 may include a material different from that of the first process gas G1 .

In an embodiment, the second linear nozzle units 150 may inject different second process gases G2 to the substrate SUB. In another embodiment, at least some of the second linear nozzle units 150 may inject the same second process gas G2 to the substrate SUB.

In an embodiment, each of the second linear nozzle units 150 may include a second gas supply unit 152 and a second electrode 154 .

The second gas supply unit 152 may supply the second process gas G2 . For example, the second gas supply unit 152 may transfer the second process gas G2 supplied from the outside to the second electrode 154 .

The second electrode 154 may be disposed under the second gas supply unit 152 , and may penetrate the second process gas G2 supplied from the second gas supply unit 152 to be sprayed onto the substrate SUB.

The second electrode 154 may extend in the second direction DR2 . A second nozzle 116 may be formed inside the second electrode 154 . The second nozzle 116 may be formed to penetrate the second electrode 154 in the thickness direction (the third direction DR3 ).

The second electrode 154 may selectively convert the second process gas G2 supplied from the second gas supply unit 152 into a plasma state and spray it onto the substrate SUB. For example, when the RF power is turned on and a high voltage is applied to the second electrode 154 , the second process gas G2 passing through the second electrode 154 is excited into a plasma state and sprayed onto the substrate SUB. can be On the other hand, when the RF power is turned off and a high voltage is not applied to the second electrode 154 , the second process gas G2 passing through the second electrode 154 is not excited to a plasma state and the substrate SUB is can be sprayed with

7 , the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB is at both sides of the second electrode 154 in the longitudinal direction (the second direction DR2 ). It may be different from the distance d4 between the part 154b and the substrate SUB. In an embodiment, the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB is the distance d3 between the opposite side portions 154b of the second electrode 154 and the substrate SUB. d4) may be greater. For example, the distance between the second electrode 154 and the substrate SUB may decrease as the distance from the central portion 154a of the second electrode 154 increases. In this case, the lower surface of the second electrode 154 may be a curved surface in which the central portion 154a is concave upward.

In an embodiment, the thickness t3 of the central portion 154a of the second electrode 154 may be different from the thickness t4 of the side portions 154b. For example, the thickness t3 of the central portion 154a of the second electrode 154 may be smaller than the thickness t4 of the side portions 154b. For example, the thickness of the second electrode 154 may increase as the distance from the central portion 154a increases. In this case, the upper surface of the second electrode 154 may be a substantially flat plane, and the lower surface of the second electrode 154 may be a curved surface in which the central portion 154a is concave upward. In addition, the length of the second nozzles 116 penetrating the second electrode 154 in the thickness direction (the third direction DR3 ) may increase as the distance from the central portion 154a of the second electrode 154 increases. have.

In one embodiment, as shown in FIG. 6 , the second electrode 154 may have substantially the same width in the first direction DR1 . That is, the width of the central portion 154a of the second electrode 154 in the first direction DR1 may be substantially the same as the width of the side portions 154b in the first direction DR1 .

The second process gas G2 may include a material having a characteristic in which a relatively thick thin film is formed in the central portion 154a than in both sides 154b in the second direction DR2 of the second electrode 154 . can As a specific example, when the second process gas G2 includes a nitrogen-based reaction gas and the distance between the second electrode 154 and the substrate SUB is constant, the thickness of the thin film formed in the central portion of the substrate SUB may be greater than the thickness of the thin film formed on both sides in the second direction DR2 . However, according to the deposition apparatus 11 according to the embodiments of the present invention, the lower surface of the second electrode 154 and the substrate SUB from both sides 154b to the central portion 154a of the second electrode 154 . The distance between them may increase. Accordingly, a thin film having a uniform thickness may be formed on the central portion of the substrate SUB and on both sides in the second direction DR2 . In addition, by adjusting the difference between the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB and the distance d4 between the side portions 154b and the substrate SUB, a more uniform A thin film of thickness may be formed.

In an embodiment, the second electrodes 154 included in each of the plurality of second linear nozzle units 150 may have the same cross-sectional shape. For example, each of the second electrodes 154 may have a cross-sectional shape with a lower surface concave upward as shown in FIG. 7 . In this case, the distance between the central portion 154a of the second electrodes 154 arranged in parallel along the first direction DR1 and the substrate SUB is equal to each other, and both sides of the second electrodes 154 ( The distance between the 154b and the substrate SUB may be equal to each other.

8 is a cross-sectional view schematically illustrating a deposition apparatus according to another exemplary embodiment, and FIG. 9 is a cross-sectional view illustrating a third electrode included in the deposition apparatus of FIG. 8 . For example, FIG. 8 may correspond to the cross-sectional view of FIG. 2 .

8 and 9 , the deposition apparatus 12 according to another embodiment of the present invention may include a gas injection unit 102 and a substrate transfer unit 200 . The gas injection unit 102 may include a first linear nozzle unit 110 , a third linear nozzle unit 160 , and exhaust units 120 . The deposition apparatus 12 according to another embodiment described with reference to FIGS. 8 and 9 is similar to the embodiment described with reference to FIGS. 1 to 4 except for the configuration of the third linear nozzle unit 160 . It may be substantially the same as or similar to the deposition apparatus 10 according to the present invention. Accordingly, overlapping descriptions will be omitted or simplified.

In one embodiment, the gas injection unit 102 may include at least one first linear nozzle unit 110 and at least one third linear nozzle unit 160 . The first linear nozzle unit 110 and the third linear nozzle unit 160 may be arranged side by side in the first direction DR1 . Each of the first linear nozzle unit 110 and the third linear nozzle unit 160 may extend in the second direction DR2 .

For example, as shown in FIG. 8 , the first linear nozzle units 110 and the third linear nozzle units 160 may be alternately disposed along the first direction DR1 . Each of the third linear nozzle units 160 may be disposed adjacent to each of the first linear nozzle units 110 in the first direction DR1 or in a direction opposite to the first direction DR1 .

For another example, the first linear nozzle units 110 are disposed in parallel along the first direction DR1 on one side (eg, the left side) of the gas injection unit 102 , and the third linear nozzle units 110 are disposed on the other side (eg, the right side) on the other side (eg, the right side) of the gas injection unit 102 . The linear nozzle units 160 may be arranged in parallel along the first direction DR1 .

The first linear nozzle unit 110 may inject a first process gas G1 for forming a thin film on the substrate SUB to the substrate SUB. The first process gas G1 may be a process gas having a characteristic in which a thin film having a relatively thin thickness is formed at the central portion than at both sides in the longitudinal direction (the second direction DR2) of the first linear nozzle unit 110 . have.

The third linear nozzle unit 160 may inject a third process gas G3 for forming a thin film on the substrate SUB to the substrate SUB. The third process gas G3 may be a process gas having a characteristic in which a thin film having substantially the same thickness is formed at both sides and a central part of the third linear nozzle unit 160 in the longitudinal direction (the second direction DR2). have. For example, the third process gas G3 may include a material different from that of the first process gas G1 and the second process gas G2 .

In one embodiment, each of the third linear nozzle units 160 may include a third gas supply unit 162 and a third electrode 164 .

The third gas supply unit 162 may supply the third process gas G3 . For example, the third gas supply unit 162 may transfer the third process gas G3 supplied from the outside to the third electrode 164 .

The third electrode 164 may be disposed under the third gas supply unit 162 , and may pass through the third process gas G3 supplied from the third gas supply unit 162 and be injected to the substrate SUB.

The third electrode 164 may extend in the second direction DR2 . A third nozzle 166 may be formed inside the third electrode 164 . The third nozzle 166 may be formed to penetrate the third electrode 164 in the thickness direction (the third direction DR3 ).

The third electrode 164 may selectively convert the third process gas G3 supplied from the third gas supply unit 162 into a plasma state and spray it onto the substrate SUB. For example, when the RF power is turned on and a high voltage is applied to the third electrode 164 , the third process gas G3 passing through the third electrode 164 is excited into a plasma state and injected into the substrate SUB. can be On the other hand, when the RF power is turned off and a high voltage is not applied to the third electrode 164 , the third process gas G3 passing through the third electrode 164 is not excited to a plasma state and the substrate SUB is can be sprayed with

As shown in FIG. 9 , a distance d5 between the third electrode 164 and the substrate SUB may be constant. That is, the distance between the central portion 164a of the third electrode 164 and the substrate SUB is between the opposite side portions 164b in the longitudinal direction (the second direction DR2) of the third electrode 164 and the substrate SUB. may be substantially equal to the distance of

In one embodiment, referring to FIGS. 4, 8, and 9 , the distance d5 between the third electrode 164 and the substrate SUB is equal to the distance d5 between the both sides 114b of the first electrode 114 and the substrate. may be substantially equal to the distance d2 between (SUB). That is, the distance d5 between the third electrode 164 and the substrate SUB may be greater than the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB. In this case, as shown in FIG. 8 , the distance between the central portion 164a of the third electrode 164 and the substrate SUB is greater than the distance between the central portion 114a of the first electrode 114 and the substrate SUB. can be large

In another embodiment, the distance d5 between the third electrode 164 and the substrate SUB is substantially the same as the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB. can do. In another embodiment, the distance d5 between the third electrode 164 and the substrate SUB is equal to the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB and both sides. It may be substantially equal to the median value of the distance d2 between the 114b and the substrate SUB.

In an embodiment, the third electrode 164 may have substantially the same thickness t5 in the third direction DR3 . That is, the thickness of the central portion 164a of the third electrode 164 may be substantially the same as the thickness of the side portions 164b. For example, the upper and lower surfaces of the third electrode 164 may be substantially flat. Also, the lengths of the third nozzles 166 penetrating the third electrode 164 in the thickness direction (the third direction DR3 ) may be the same.

In an embodiment, the third electrode 164 may have substantially the same width in the first direction DR1 . That is, the width of the central portion 164a of the third electrode 164 in the first direction DR1 may be substantially the same as the width of the side portions 164b in the first direction DR1 .

According to the present embodiment, when the process gas used in the deposition process includes the first process gas G1 and the third process gas G3, the first linear nozzle unit 110 and the second linear nozzle unit 110 having different cross-sectional shapes A deposition process may be performed by combining the three linear nozzle units 160 . Accordingly, a thin film having a uniform thickness may be formed on the central portion of the substrate SUB and on both sides in the second direction DR2 .

10 to 13 are cross-sectional views schematically illustrating deposition apparatuses according to embodiments of the present invention.

10 to 13 , the first linear nozzle unit 110 , the second linear nozzle unit 150 , and the third linear nozzle unit have different cross-sectional shapes according to the characteristics of the process gases used in the deposition process. (160) can be variously combined and arranged. Hereinafter, descriptions overlapping with the above description will be omitted or simplified.

In one embodiment, referring to FIG. 10 , the deposition apparatus 13 may include a gas ejection unit 103 and a substrate transfer unit 200 . The gas injection unit 103 may include at least one second linear nozzle unit 150 and at least one third linear nozzle unit 160 .

For example, as shown in FIG. 10 , the second linear nozzle units 150 and the third linear nozzle units 160 may be alternately disposed along the first direction DR1 . That is, the third linear nozzle unit 160 may be disposed adjacent to the second linear nozzle unit 150 in the first direction DR1 or in a direction opposite to the first direction DR1 .

For another example, the second linear nozzle units 150 are disposed in parallel along the first direction DR1 on one side (eg, the left side) of the gas injection unit 103 , and the third side (eg, the right side) is disposed on the other side (eg, the right side) of the gas injection unit 103 . The linear nozzle units 160 may be arranged in parallel along the first direction DR1 .

The second linear nozzle unit 150 may inject the second process gas G2 to the substrate SUB. The third linear nozzle unit 160 may inject the third process gas G3 to the substrate SUB.

In one embodiment, referring to FIGS. 7, 9 and 10 , the distance d5 between the third electrode 164 and the substrate SUB is equal to the distance d5 between the opposite side portions 154b of the second electrode 154 and the substrate. may be substantially equal to the distance d4 between (SUB). That is, the distance d5 between the third electrode 164 and the substrate SUB may be smaller than the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB. In this case, as shown in FIG. 10 , the distance between the central portion 164a of the third electrode 164 and the substrate SUB is greater than the distance between the central portion 154a of the second electrode 154 and the substrate SUB. can be small

In another embodiment, the distance d5 between the third electrode 164 and the substrate SUB is substantially the same as the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB. can do. In another embodiment, the distance d5 between the third electrode 164 and the substrate SUB is the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB and both sides. It may be substantially equal to the median value of the distance d4 between the 154b and the substrate SUB.

According to the present embodiment, when the process gas used for the deposition process includes the second process gas G2 and the third process gas G3, the second linear nozzle unit 150 and the second linear nozzle unit 150 having different cross-sectional shapes A deposition process may be performed by combining the three linear nozzle units 160 . Accordingly, a thin film having a uniform thickness may be formed on the central portion of the substrate SUB and on both sides in the second direction DR2 .

In one embodiment, referring to FIG. 11 , the deposition apparatus 14 may include a gas ejection unit 104 and a substrate transfer unit 200 . The gas injection unit 104 may include at least one first linear nozzle unit 110 and at least one second linear nozzle unit 150 .

For example, as shown in FIG. 11 , the first linear nozzle unit 110 and the second linear nozzle unit 150 may be alternately disposed along the first direction DR1 . That is, the second linear nozzle unit 150 may be disposed adjacent to the first linear nozzle unit 110 in the first direction DR1 or in a direction opposite to the first direction DR1 .

For another example, the first linear nozzle units 110 are disposed in parallel along the first direction DR1 on one side (eg, the left side) of the gas injection unit 104 , and the second side (eg, the right side) is disposed on the other side (eg, the right side) of the gas injection unit 104 . The linear nozzle units 150 may be arranged in parallel along the first direction DR1 .

The first linear nozzle unit 110 may inject the first process gas G1 to the substrate SUB. The second linear nozzle unit 150 may inject the second process gas G2 to the substrate SUB.

In one embodiment, referring to FIGS. 4, 7 and 11 , the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB is the central portion ( It may be greater than the distance d1 between the 114a and the substrate SUB. The distance d4 between the both sides 154b of the second electrode 154 and the substrate SUB is substantially the same as the distance d2 between the both sides 114b of the first electrode 114 and the substrate SUB. can be the same.

In another embodiment, the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB is the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB. ) may be substantially the same as In another embodiment, the median of the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB and the distance d4 between the both sides 154b and the substrate SUB is , may be substantially equal to a median value of the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB and the distance d2 between the side portions 114b and the substrate SUB. .

According to the present embodiment, when the process gas used in the deposition process includes the first process gas G1 and the second process gas G2, the first linear nozzle unit 110 and the second process gas having different cross-sectional shapes The deposition process may be performed by combining the two linear nozzle units 150 . Accordingly, a thin film having a uniform thickness may be formed on the central portion of the substrate SUB and on both sides in the second direction DR2 .

12 and 13 , the deposition apparatus 15 may include a gas injection unit 105 and a substrate transfer unit 200 . The gas injection unit 105 may include at least one first linear nozzle unit 110 , at least one second linear nozzle unit 150 , and at least one third linear nozzle unit 160 .

For example, as shown in FIG. 12 , the first linear nozzle unit 110 , the second linear nozzle unit 150 , and the third linear nozzle unit 160 are alternately arranged along the first direction DR1 . can be placed. That is, the second linear nozzle unit 150 is disposed adjacent to the first linear nozzle unit 110 in the first direction DR1 , and the third linear nozzle unit 160 includes the first linear nozzle unit 110 and the first linear nozzle unit 110 . They may be disposed adjacent to each other in a direction opposite to the first direction DR1 .

For another example, as shown in FIG. 13 , on one side (eg, on the left side) of the gas injection unit 105 , the first linear nozzle units 110 are arranged in parallel along the first direction DR1 , and the other side (For example, on the right side), the second linear nozzle units 150 are arranged in parallel along the first direction DR1, and in the center between the one side and the other side, the second linear nozzle units 150 are arranged in the first direction ( It may be arranged side by side along DR1).

The first linear nozzle unit 110 may inject the first process gas G1 to the substrate SUB. The second linear nozzle unit 150 may inject the second process gas G2 to the substrate SUB. The third linear nozzle unit 160 may inject the third process gas G3 to the substrate SUB.

In an embodiment, referring to FIGS. 4, 7, 9 and 12 , the distance d5 between the central portion 164a of the third electrode 164 and the substrate SUB is the first electrode 114 . may be greater than the distance d1 between the central portion 114a of the second electrode 154 and the substrate SUB and smaller than the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB. In addition, the distance d5 between the both sides 164b of the third electrode 164 and the substrate SUB is the distance d2 between the both sides 114b of the first electrode 114 and the substrate SUB. and a distance d4 between the opposite side portions 154b of the second electrode 154 and the substrate SUB may be substantially the same.

In another embodiment, the distance d5 between the third electrode 164 and the substrate SUB is the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB and both sides. It may be substantially equal to the median value of the distance d2 between the 114b and the substrate SUB. In addition, the distance d5 between the third electrode 164 and the substrate SUB is the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB and the opposite side portions 154b and It may be substantially equal to the median value of the distance d4 between the substrates SUB.

According to the present embodiment, when the process gas used in the deposition process includes the first process gas G1, the second process gas G2, and the third process gas G3, the first process gas having different cross-sectional shapes The deposition process may be performed by combining the linear nozzle unit 110 , the second linear nozzle unit 150 , and the third linear nozzle unit 160 . Accordingly, a thin film having a uniform thickness may be formed on the central portion of the substrate SUB and on both sides in the second direction DR2 .

The present invention can be applied to various deposition apparatuses. For example, the present invention may be applied to a deposition apparatus for manufacturing a display device included in a computer, a notebook computer, a mobile phone, a smart phone, a smart pad, a PMP, a PDA, an MP3 player, and the like.

Although the above has been described with reference to exemplary embodiments of the present invention, those of ordinary skill in the art may change the present invention in various ways without departing from the spirit and scope of the present invention as set forth in the claims below. It will be understood that modifications and changes may be made.

10, 11, 12, 13, 14, 15: deposition apparatus
100, 101, 102, 103, 104, 105: gas injection unit
110, 150, 160: first to third linear nozzle units
112, 152, 162: first to third gas supply units
114, 154, 164: first to third electrodes
116, 156, 166: first to third nozzles
G1, G2, G3: first to third process gases
120: exhaust unit 130: curtain gas injection unit
SUB: substrate 200: substrate transfer unit

Claims (20)

a gas injection unit including a plurality of linear nozzle units arranged side by side in a first direction; and
and a substrate transfer unit configured to reciprocate a substrate in the first direction from a lower portion of the gas injection unit,
Each of the linear nozzle parts,
a gas supply unit for supplying a process gas; and
an electrode extending in a second direction perpendicular to the first direction and injecting the process gas supplied from the gas supply unit to the substrate through a nozzle formed therein;
A distance between the central portion of the electrode and the substrate is different from a distance between both sides of the electrode in a longitudinal direction and the substrate. The deposition apparatus of claim 1 , wherein the distance between the electrode and the substrate increases as the distance from the central portion of the electrode increases. The deposition apparatus of claim 2 , wherein a lower surface of the electrode has a curved surface in which the central portion is convex downward. The deposition apparatus of claim 2 , wherein the thickness of the electrode decreases as it moves away from the central portion of the electrode. The deposition apparatus of claim 1 , wherein the distance between the electrode and the substrate decreases as the distance from the central portion of the electrode decreases. The deposition apparatus of claim 5 , wherein a lower surface of the electrode has a curved surface in which the central portion is concave upward. The deposition apparatus of claim 5 , wherein the thickness of the electrode increases as it moves away from the central portion of the electrode. The deposition apparatus of claim 1, wherein a width of the central portion of the electrode in the first direction is the same as a width of the both sides of the electrode in the first direction. The deposition apparatus of claim 1, wherein the electrodes included in each of the linear nozzle units have the same cross-sectional shape. The deposition apparatus of claim 1 , wherein a distance between a center portion of the electrodes included in each of the linear nozzle units and the substrate is equal to each other. a gas injection unit including a plurality of linear nozzle units arranged side by side in a first direction; and
and a substrate transfer unit configured to reciprocate a substrate in the first direction from a lower portion of the gas injection unit,
The first linear nozzle unit,
a first gas supply unit supplying a first process gas; and
The substrate extends in a second direction perpendicular to the first direction, a central portion is spaced apart from the substrate by a first distance, and the first process gas supplied from the first gas supply unit is supplied to the substrate through a first nozzle formed therein. Including a first electrode spraying to
A second linear nozzle unit adjacent to the first linear nozzle unit in the first direction,
a second gas supply unit supplying a second process gas different from the first process gas; and
It extends in the second direction, the central portion is spaced apart from the substrate by a second distance greater than the first distance, and the second process gas supplied from the second gas supply unit is supplied to the substrate through a second nozzle formed therein. A deposition apparatus comprising a second electrode for spraying into the. The method of claim 11, wherein the distance between the first electrode and the substrate increases as the distance from the central portion of the first electrode increases,
The deposition apparatus of claim 1, wherein the distance between the second electrode and the substrate decreases as the distance from the central portion of the second electrode increases. The method of claim 12, wherein the lower surface of the first electrode is a curved surface in which the central portion is convex downward,
The lower surface of the second electrode is a deposition apparatus, characterized in that the central portion is a curved surface concave upwards. The method of claim 12, wherein the thickness of the first electrode becomes smaller as it goes away from the central portion of the first electrode,
A thickness of the second electrode increases as it moves away from a central portion of the second electrode. 13. The method of claim 12,
A third linear nozzle unit adjacent to the first linear nozzle unit in a direction opposite to the first direction,
a third gas supply unit configured to supply a third process gas different from the first process gas and the second process gas; and
The third process gas extending in the second direction, the central portion being spaced apart from the substrate by a third distance greater than the first distance and smaller than the second distance, is formed therein with the third process gas supplied from the third gas supply unit. and a third electrode spraying the substrate to the substrate through 3 nozzles. The deposition apparatus of claim 15 , wherein a distance between the central portion of the third electrode and the substrate is equal to a distance between both sides of the third electrode in a longitudinal direction and the substrate. The deposition apparatus of claim 15 , wherein a lower surface of the third electrode is flat. The deposition apparatus of claim 15 , wherein a thickness of the central portion of the third electrode is the same as a thickness of both sides of the third electrode in a longitudinal direction. The method of claim 11, wherein the distance between the first electrode and the substrate increases as the distance from the central portion of the first electrode increases,
A distance between the central portion of the second electrode and the substrate is the same as a distance between both sides of the second electrode in a longitudinal direction and the substrate. The method of claim 11 , wherein a distance between the central portion of the first electrode and the substrate is equal to a distance between both sides of the first electrode in the longitudinal direction and the substrate,
The deposition apparatus of claim 1, wherein the distance between the second electrode and the substrate decreases as the distance from the central portion of the second electrode increases.

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