CN115198249A

CN115198249A - Deposition apparatus

Info

Publication number: CN115198249A
Application number: CN202210330040.7A
Authority: CN
Inventors: 张喆旼; 金定坤; 李熙龙; 全东杓; 郑檭
Original assignee: Samsung Display Co Ltd
Current assignee: Samsung Display Co Ltd
Priority date: 2021-04-01
Filing date: 2022-03-28
Publication date: 2022-10-18
Also published as: KR20220137203A; CN217459590U

Abstract

The deposition apparatus may include: a gas injection unit including a plurality of linear nozzle portions arranged in parallel along a first direction; a substrate transfer unit which reciprocally transfers the substrate along a first direction under the gas injection unit; and a deposition chamber accommodating the gas injection unit and the substrate transfer unit. Each of the linear nozzle parts may include: a gas supply part for supplying a process gas; and an electrode extending in a second direction perpendicular to the first direction and jetting the process gas received from the gas supply part to the substrate through a nozzle formed inside. The distance between the central portion of the electrode and the substrate may be different from the distance between both side portions of the electrode in the length direction and the substrate.

Description

Deposition apparatus

Technical Field

The present invention relates to a deposition apparatus. In more detail, the present invention relates to a deposition apparatus for depositing a thin film by injecting a process gas to a subject substrate.

Background

Flat panel display devices are used as display devices replacing cathode ray tube display devices due to their characteristics of light weight, thin thickness, and the like. Representative examples of such flat panel display devices are liquid crystal display devices and organic light emitting display devices.

As for the manufacture of the above-described display device, a Chemical Vapor Deposition (CVD) process and an Atomic Layer Deposition (ALD) process for depositing a thin film by spraying a process gas onto a surface of a target substrate, a Plasma Enhanced Chemical Vapor Deposition (PECVD) process and a plasma enhanced chemical vapor deposition (PEALD) process for depositing in a plasma state by applying a high voltage while spraying a process gas are being used. In addition, when the PECVD process and the PEALD process are performed, the uniformity of the film thickness may be reduced according to plasma characteristics of process gas substances, and this may be exacerbated as the target substrate is upsized.

Disclosure of Invention

Solves the technical problem

The invention aims to provide a deposition device capable of depositing a thin film with a uniform thickness.

However, the present invention is not limited to the above-described object, and various extensions can be made without departing from the scope and spirit of the present invention.

Solving means

In order to achieve the above object of the present invention, a deposition apparatus according to an exemplary embodiment of the present invention may include: a gas injection unit including a plurality of linear nozzle portions arranged in parallel along a first direction; a substrate transfer unit that reciprocally transfers a substrate along the first direction below the gas injection unit; and a deposition chamber accommodating the gas injection unit and the substrate transfer unit. Each of the linear nozzle parts may include: a gas supply part for supplying a process gas; and an electrode extending in a second direction perpendicular to the first direction and jetting the process gas received from the gas supply part to the substrate through a nozzle formed inside. A distance between the central portion of the electrode and the substrate may be different from a distance between both side portions of the electrode in the length direction and the substrate.

In one embodiment, a distance between the electrode and the substrate may increase as being away from the central portion of the electrode.

In one embodiment, the thickness of the electrode may decrease away from the central portion of the electrode.

In one embodiment, the distance between the electrode and the substrate may decrease with distance from the central portion of the electrode.

In one embodiment, the thickness of the electrode may increase with distance from the central portion of the electrode.

In one embodiment, distances between the central portion of the electrode included in each of the linear nozzle portions and the substrate may be the same as each other.

In order to achieve the above object of the present invention, a deposition apparatus according to an exemplary embodiment of the present invention may include: a gas injection unit including a plurality of linear nozzle portions arranged in parallel along a first direction; a substrate transfer unit that reciprocally transfers the substrate along the first direction below the gas injection unit; and a deposition chamber accommodating the gas injection unit and the substrate transfer unit. The first linear nozzle portion of the plurality of linear nozzle portions may include: a first gas supply part supplying a first process gas; and a first electrode extending in a second direction perpendicular to the first direction, and a central portion of the first electrode is spaced apart from the substrate by a first distance, and the first electrode injects the first process gas received from the first gas supply portion to the substrate through a first nozzle formed inside. The second linear nozzle portion adjacent to the first linear nozzle portion in the first direction may include: a second gas supply part supplying a second process gas different from the first process gas; and a second electrode extending in the second direction, and a central portion of the second electrode is spaced apart from the substrate by a second distance greater than the first distance, and the second electrode injects the second process gas received from the second gas supply portion to the substrate through a second nozzle formed inside.

In one embodiment, a distance between the first electrode and the substrate may increase as being distant from the central portion of the first electrode. A distance between the second electrode and the substrate may decrease as being distant from the central portion of the second electrode.

In one embodiment, the thickness of the first electrode may decrease as being distant from a central portion of the first electrode. The thickness of the second electrode may increase as being distant from a central portion of the second electrode.

In one embodiment, a third linear nozzle portion adjacent to the first linear nozzle portion in a direction opposite the first direction may include: a third gas supply part supplying a third process gas different from the first process gas and the second process gas; and a third electrode extending in the second direction, and a central portion of the third electrode is spaced apart from the substrate by a third distance greater than the first distance and less than the second distance, and the third electrode injects the third process gas received from the third gas supply portion to the substrate through a third nozzle formed inside. A distance between the central portion of the third electrode and the substrate may be equal to a distance between both side portions of the third electrode in a length direction and the substrate.

Advantageous effects

The deposition apparatus according to an embodiment of the present invention may include linear nozzle portions arranged in parallel along a first direction. Each of the linear nozzle parts may include an electrode extending in a second direction perpendicular to the first direction and exciting a process gas into a plasma state and being injected to the substrate through a nozzle formed inside. A distance between the central portion of the electrode and the substrate may be different from a distance between both side portions of the electrode in the length direction and the substrate. Therefore, even if the substrate is enlarged, a thin film having a uniform thickness can be deposited on the substrate.

However, the effects of the present invention are not limited to the above-described effects, and various extensions may be made within a scope not departing from the spirit and field of the present invention.

Drawings

Fig. 1 is a perspective view schematically showing a deposition apparatus according to an embodiment of the present invention.

Fig. 2 is a sectional view taken along line I-I' of fig. 1.

Fig. 3 is a perspective view illustrating a first electrode included in the deposition apparatus of fig. 2.

Fig. 4 is a sectional view taken along line II-II' of fig. 3.

Fig. 5 is a sectional view schematically showing a deposition apparatus according to another embodiment of the present invention.

Fig. 6 is a perspective view illustrating a second electrode included in the deposition apparatus of fig. 5.

Fig. 7 is a sectional view taken along line III-III' of fig. 6.

Fig. 8 is a sectional view schematically showing a deposition apparatus according to still another embodiment of the present invention.

Fig. 9 is a sectional view illustrating a third electrode included in the deposition apparatus of fig. 8.

Fig. 10 to 13 are sectional views schematically showing a deposition apparatus according to an embodiment of the present invention.

Description of reference numerals

10. 11, 12, 13, 14, 15: deposition apparatus

100. 101, 102, 103, 104, 105: gas injection unit

110. 150, 160: first to third linear nozzle sections

112. 152, 162: first to third gas supply parts

114. 154, 164: first to third electrodes

116. 156, 166: first to third nozzles

G1, G2, G3: first to third process gases

120: the exhaust unit 130: curtain gas injection part

SUB: substrate 200: substrate transfer unit

Detailed Description

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The same or similar reference numerals are used for the same constituent elements in the drawings.

Fig. 1 is a perspective view schematically illustrating a deposition apparatus according to an embodiment of the present invention, fig. 2 is a sectional view taken along line I-I 'of fig. 1, fig. 3 is a perspective view illustrating a first electrode included in the deposition apparatus of fig. 2, and fig. 4 is a sectional view taken along line II-II' of fig. 3.

Referring to fig. 1 to 4, a deposition apparatus 10 according to an embodiment of the present invention may include a gas injection unit 100 and a substrate transfer unit 200. The gas injection unit 100 and the substrate transfer unit 200 may be accommodated in a deposition chamber (not shown).

The substrate transfer unit 200 may support a substrate SUB as a deposition target and may transfer the substrate SUB in the deposition chamber. For example, the substrate transfer unit 200 may transfer the substrate SUB to and fro along the first direction DR1 below the gas injection unit 100.

The gas injection unit 100 may inject a process gas toward the substrate SUB, which is reciprocated along the first direction DR1 at a lower side, thereby forming a thin film on the substrate SUB. The deposition apparatus 10 may be applied to various deposition processes such as an Atomic Layer Deposition (ALD) process, a Plasma Enhanced Atomic Layer Deposition (PEALD) process, a Chemical Vapor Deposition (CVD) process, and a Plasma Enhanced Chemical Vapor Deposition (PECVD) process according to the type, the spraying manner, whether a high voltage is applied, and the like of the process gas. For example, when the ALD process or the PEALD process is applied, the source gas and the process gas may be respectively injected by the linear nozzle part included in the gas injection unit 100. When the CVD process or the PECVD process is applied, the linear nozzle part may inject the mixed gas, respectively.

In one embodiment, the gas injection unit 100 may include a plurality of first linear nozzle portions 110 and a plurality of exhaust portions 120.

The first linear nozzle portions 110 may be arranged in parallel along the first direction DR 1. Each of the first linear nozzle portions 110 may extend in a second direction DR2 perpendicular to the first direction DR 1. Although fig. 2 shows that six first linear nozzle portions 110 are arranged in parallel along the first direction DR1, the number of first linear nozzle portions 110 is not limited thereto. For example, 2 to 5 or 7 or more first linear nozzle portions 110 may be arranged in the gas injection unit 100.

Each of the first linear nozzle portions 110 may inject the first process gas G1 for forming a thin film on the substrate SUB onto the substrate SUB. Here, the first process gas G1 may be a process gas having a characteristic of forming a thin film thinner than the thickness of both side portions in the longitudinal direction (the second direction DR 2) of the first linear nozzle portion 110 at the central portion of the first linear nozzle portion 110. This will be described in detail later.

In one embodiment, the first linear nozzle portions 110 may respectively inject the first process gases G1 different from each other to the substrate SUB. In another embodiment, at least a portion of the first linear nozzle portion 110 may inject the same first process gas G1 to the substrate SUB.

Specifically, as an example in which the deposition apparatus 10 is applied to an ALD process or a PEALD process, the first linear nozzle part 110 on the left may inject a first source gas, and the second first linear nozzle part 110 may inject a first reactant gas that reacts with the first source gas to form a first thin film. The third first linear nozzle portion 110 on the left may inject the second source gas, and the fourth first linear nozzle portion 110 may inject the second reactant gas that reacts with the second source gas to form the second thin film. The fifth first linear nozzle part 110 on the left may inject a third source gas, and the sixth first linear nozzle part 110 may inject a third reaction gas that reacts with the third source gas to form a third thin film. In this case, the first thin film, the second thin film, and the third thin film may be sequentially stacked and formed on the substrate SUB while the substrate SUB moves from the left side to the right side and passes under the first linear nozzle portion 110 injecting the process gas.

As another example, the odd-numbered first linear nozzle parts 110 on the left may inject the first source gas, and the even-numbered first linear nozzle parts 110 on the left may inject the first reactant gas. In this case, the above-described first thin film having a relatively thick thickness may be formed on the substrate SUB.

As an example of the deposition apparatus 10 applied to the CVD process or the PECVD process, the odd-numbered first linear nozzle sections 110 on the left side may inject the first mixed gas forming the fourth thin film, and the even-numbered first linear nozzle sections 110 may inject the second mixed gas forming the fifth thin film. In this case, the fourth thin film and the fifth thin film may be alternately stacked and formed on the substrate SUB. However, this is exemplary, and the present invention is not limited thereto.

Each of the exhaust parts 120 may be disposed around the first linear nozzle part 110. The exhaust unit 120 may be connected to an exhaust pump or the like and exhaust the by-products separated from the substrate SUB, the excess process gas, or the like to the outside. The exhaust part 120 may prevent the first process gas G1 injected from the first linear nozzle part 110 from moving toward the adjacent first linear nozzle part 110. For example, each of the exhaust portions 120 may be arranged to surround each of the first linear nozzle portions 110 on a plane.

In one embodiment, the deposition apparatus 10 may further include a plurality of curtain gas injection portions 130. Each of the curtain gas injection sections 130 may be arrangedAround the first linear nozzle section 110, and may inject a curtain gas toward the substrate SUB. The curtain gas may be a gas that does not react with the first process gas G1 injected from the first linear nozzle section 110, and may be, for example, argon (Ar), nitrogen (N) ₂ ) And the like.

For example, each of the curtain gas injection sections 130 may be arranged to planarly surround each of the first linear nozzle sections 110. The above-described curtain gas injected from each of the curtain gas injection sections 130 may perform the function of a curtain surrounding each of the first linear nozzle sections 110 to prevent the first process gas G1 injected from the first linear nozzle sections 110 from being dispersed to the periphery and mixed with other process gases. Accordingly, even if the first linear nozzle 110 simultaneously injects the process gases different from each other to the substrate SUB, the process gases may not be mixed.

In one embodiment, each of the first linear nozzle portions 110 may include a first gas supply 112 and a first electrode 114.

The first gas supply part 112 may supply a first process gas G1. For example, the first gas supply part 112 may transfer the first process gas G1 received from the outside to the first electrode 114.

The first electrode 114 may be disposed below the first gas supply part 112, and may penetrate and inject the first process gas G1 received from the first gas supply part 112 to the substrate SUB.

The first electrode 114 may extend in the second direction DR 2. The first electrode 114 may be internally formed with a first nozzle 116. The first nozzle 116 may be formed by penetrating the first electrode 114 in a thickness direction (e.g., a third direction DR3 perpendicular to the first and second directions DR1 and DR 2). For example, as shown in fig. 3, the first nozzles 116 in the form of through holes extending in the third direction DR3 may be arranged in two rows along the second direction DR 2. However, this is exemplary, and the shape and arrangement of the first nozzle 116 of the present invention are not limited thereto. For example, the plurality of first nozzles 116 may be arranged in one row or three or more rows in the second direction DR 2. As another example, one first nozzle 116 may be lengthily extended along the second direction DR2 and may be formed to penetrate the first electrode 114 in the third direction DR 3.

The first electrode 114 may selectively change the first process gas G1 received from the first gas supply part 112 into a plasma state and inject it to the substrate SUB. For example, if the RF power source (not shown) is turned on to apply a high voltage to the first electrode 114, the first process gas G1 penetrating the first electrode 114 may be excited into a plasma state and injected to the substrate SUB. In contrast, if the above-described RF power is turned off without applying a high voltage to the first electrode 114, the first process gas G1 penetrating the first electrode 114 may be injected to the substrate SUB without being excited into a plasma state.

As shown in fig. 4, a distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB may be different from a distance d2 between both side portions 114b of the length direction (second direction DR 2) of the first electrode 114 and the substrate SUB. In one embodiment, the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB may be smaller than the distance d2 between the two side portions 114b of the first electrode 114 and the substrate SUB. For example, the distance between the first electrode 114 and the substrate SUB may increase as being away from the central portion 114a of the first electrode 114. In this case, the lower surface of the first electrode 114 may be a curved surface in which the central portion 114a protrudes downward.

In one embodiment, the thickness t1 of the central portion 114a of the first electrode 114 may be different from the thickness t2 of the two side portions 114 b. For example, the thickness t1 of the central portion 114a of the first electrode 114 may be greater than the thicknesses t2 of the two side portions 114 b. For example, the thickness of the first electrode 114 may decrease as going away from the central portion 114 a. In this case, the upper surface of the first electrode 114 may be a substantially flat plane, and the lower surface of the first electrode 114 may be a curved surface in which the central portion 114a protrudes downward. Further, the length of the first nozzle 116 penetrating the first electrode 114 in the thickness direction (third direction DR 3) may decrease as being distant from the central portion 114a of the first electrode 114.

In one embodiment, as shown in fig. 3, the first electrodes 114 may have substantially the same width in the first direction DR 1. That is, the width of the central portion 114a of the first electrode 114 in the first direction DR1 may be substantially the same as the width of the both side portions 114b of the first electrode 114 in the first direction DR 1.

In an exemplary embodiment, various process gases may be used according to the kind or deposition manner of a thin film to be formed on the substrate SUB. Further, in the case of the PEALD process or the PECVD process using plasma, the thicknesses of thin films deposited respectively under the central portion 114a and the two side portions 114b in the length direction (second direction DR 2) of the first electrode 114 may be different according to the plasma characteristics of the substances constituting the process gas. Further, as the substrate SUB is increased in size (for example, as the width of the substrate SUB in the second direction DR2 is increased), the thickness difference may be more increased.

The first process gas G1 may include a substance having a property of forming a thin film having a relatively thinner thickness at the central portion 114a of the first electrode 114 than at both side portions 114b of the first electrode 114 in the second direction DR 2. As a specific example, in the case where the first process gas G1 includes an oxygen-based reaction gas, if the distance between the first electrode 114 and the substrate SUB is constant, the thickness of the thin film formed at the central portion of the substrate SUB may be less than the thickness of the thin films formed at both side portions of the second direction DR 2. However, according to the deposition apparatus 10 of the embodiment of the present invention, the distance between the lower surface of the first electrode 114 and the substrate SUB may decrease from the both side portions 114b to the central portion 114a of the first electrode 114. Thereby, thin films having a uniform thickness may be formed on the central portion of the substrate SUB and both side portions of the second direction DR 2. Further, a thin film having a more uniform thickness can be formed by adjusting the difference between the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB and the distance d2 between the two side portions 114b and the substrate SUB.

In one embodiment, the first electrodes 114 included in each of the plurality of first linear nozzle sections 110 may have the same sectional shape as each other. For example, as shown in fig. 4, each of the first electrodes 114 may have a sectional shape in which a lower surface is downwardly convex. In this case, distances between the central portion 114a of the first electrode 114 and the substrate SUB arranged in parallel along the first direction DR1 may be the same as each other, and distances between both side portions 114b of the first electrode 114 and the substrate SUB may be the same as each other.

Fig. 5 is a sectional view schematically showing a deposition apparatus according to another embodiment of the present invention, fig. 6 is a perspective view showing a second electrode included in the deposition apparatus of fig. 5, and fig. 7 is a sectional view taken along line III-III' of fig. 6. For example, the cross-sectional view of fig. 5 may correspond to the cross-sectional view of fig. 2.

Referring to fig. 5 to 7, a deposition apparatus 11 according to another embodiment of the present invention may include a gas injection unit 101 and a substrate transfer unit 200. The gas injection unit 101 may include a plurality of second linear nozzle portions 150 and a plurality of gas exhaust portions 120. The deposition apparatus 11 according to another embodiment described with reference to fig. 5 to 7 may be substantially the same as or similar to the deposition apparatus 10 according to an embodiment described with reference to fig. 1 to 4, except for the configuration of the second linear nozzle portion 150. Therefore, duplicate description will be omitted or simplified.

The second linear nozzle portions 150 may be arranged in parallel along the first direction DR 1. Each of second linear nozzle portions 150 may extend in second direction DR 2.

Each of the second linear nozzle portions 150 may inject the second process gas G2 for forming a thin film on the substrate SUB onto the substrate SUB. The second process gas G2 may be a process gas having a characteristic of forming a thin film relatively thicker than the thickness of both side portions in the longitudinal direction (second direction DR 2) of the second linear nozzle section 150 in the central portion of the second linear nozzle section 150. For example, the second process gas G2 may include a different species than the first process gas G1.

In one embodiment, the second linear nozzle portions 150 may respectively inject the second process gases G2 different from each other to the substrate SUB. In another embodiment, at least a portion of the second linear nozzle portion 150 may inject the same second process gas G2 to the substrate SUB.

In one embodiment, each of the second linear nozzle portions 150 may include a second gas supply 152 and a second electrode 154.

The second gas supply part 152 may supply the second process gas G2. For example, the second gas supply part 152 may transfer the second process gas G2 received from the outside to the second electrode 154.

The second electrode 154 may be disposed below the second gas supply part 152, and may penetrate and inject the second process gas G2 received from the second gas supply part 152 to the substrate SUB.

The second electrode 154 may extend in the second direction DR 2. The second electrode 154 may be internally formed with a second nozzle 156. The second nozzle 156 may be formed to penetrate the second electrode 154 in the thickness direction (third direction DR 3).

The second electrode 154 may selectively change the second process gas G2 received from the second gas supply part 152 into a plasma state and inject it to the substrate SUB. For example, if the RF power is turned on to apply a high voltage to the second electrode 154, the second process gas G2 penetrating the second electrode 154 may be excited into a plasma state and injected to the substrate SUB. In contrast, if the RF power is turned off without applying a high voltage to the second electrode 154, the second process gas G2 penetrating the second electrode 154 may be injected to the substrate SUB without being excited into a plasma state.

As shown in fig. 7, a distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB may be different from a distance d4 between both side portions 154b of the length direction (second direction DR 2) of the second electrode 154 and the substrate SUB. In one embodiment, a distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB may be greater than a distance d4 between both side portions 154b of the second electrode 154 and the substrate SUB. For example, the distance between the second electrode 154 and the substrate SUB may decrease as being distant from the central portion 154a of the second electrode 154. In this case, the lower surface of the second electrode 154 may be a curved surface in which the central portion 154a is recessed upward.

In one embodiment, the thickness t3 of the central portion 154a of the second electrode 154 may be different from the thickness t4 of the two side portions 154 b. For example, the thickness t3 of the central portion 154a of the second electrode 154 may be less than the thickness t4 of the two side portions 154 b. For example, the thickness of the second electrode 154 may increase with distance from the central portion 154 a. In this case, the upper surface of the second electrode 154 may be a substantially flat plane, and the lower surface of the second electrode 154 may be a curved surface in which the central portion 154a is recessed upward. Further, the length of the second nozzle 156 penetrating the second electrode 154 in the thickness direction (third direction DR 3) may increase as being away from the central portion 154a of the second electrode 154.

In one embodiment, as shown in fig. 6, the second electrodes 154 may have substantially the same width in the first direction DR 1. That is, the width of the central portion 154a of the second electrode 154 in the first direction DR1 may be substantially the same as the width of the both side portions 154b of the second electrode 154 in the first direction DR 1.

The second process gas G2 may include a substance having a property of forming a thin film having a relatively thicker thickness at the central portion 154a of the second electrode 154 than at both side portions 154b of the second electrode 154 in the second direction DR 2. As a specific example, in the case where the second process gas G2 includes a nitrogen-based reaction gas, if the distance between the second electrode 154 and the substrate SUB is constant, the thickness of the thin film formed at the central portion of the substrate SUB may be greater than the thickness of the thin films formed at both side portions of the second direction DR 2. However, according to the deposition apparatus 11 of the embodiment of the present invention, the distance between the lower surface of the second electrode 154 and the substrate SUB may increase from both side portions 154b to the central portion 154a of the second electrode 154. Thereby, thin films having a uniform thickness may be formed on the central portion of the substrate SUB and both side portions of the second direction DR 2. Further, a thin film having a more uniform thickness can be formed by adjusting the difference between the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB and the distance d4 between the two side portions 154b and the substrate SUB.

In one embodiment, the second electrodes 154 included in each of the plurality of second linear nozzle sections 150 may have the same sectional shape as each other. For example, as shown in fig. 7, each of the second electrodes 154 may have a sectional shape in which a lower surface is recessed upward. In this case, distances between the central portion 154a of the second electrode 154 arranged in parallel along the first direction DR1 and the substrate SUB may be the same as each other, and distances between both side portions 154b of the second electrode 154 and the substrate SUB may be the same as each other.

Fig. 8 is a sectional view schematically showing a deposition apparatus according to still another embodiment of the present invention, and fig. 9 is a sectional view of a third electrode included in the deposition apparatus of fig. 8. For example, fig. 8 may correspond to the cross-sectional view of fig. 2.

Referring to fig. 8 and 9, the deposition apparatus 12 according to another embodiment of the present invention may include a gas injection unit 102 and a substrate transfer unit 200. Gas injection unit 102 may include a first linear nozzle section 110, a third linear nozzle section 160, and an exhaust section 120. The deposition apparatus 12 according to still another embodiment described with reference to fig. 8 and 9 may be substantially the same as or similar to the deposition apparatus 10 according to an embodiment described with reference to fig. 1 to 4, except for the configuration of the third linear nozzle portion 160. Therefore, duplicate description will be omitted or simplified.

In one embodiment, gas injection unit 102 may include at least one first linear nozzle section 110 and at least one third linear nozzle section 160. The first linear nozzle portion 110 and the third linear nozzle portion 160 may be arranged in parallel along the first direction DR 1. Each of the first linear nozzle portion 110 and the third linear nozzle portion 160 may extend in the second direction DR 2.

For example, as shown in FIG. 8, the first linear nozzle segments 110 and the third linear nozzle segments 160 may be alternately arranged along the first direction DR 1. Each of the third linear nozzle segments 160 may be disposed adjacent to each of the first linear nozzle segments 110 in the first direction DR1 or a direction opposite the first direction DR 1.

As another example, it is also possible that the first linear nozzle portion 110 is arranged in parallel along the first direction DR1 on one side (e.g., left side) of the gas injection unit 102, and the third linear nozzle portion 160 is arranged in parallel along the first direction DR1 on the other side (e.g., right side).

The first linear nozzle portion 110 may inject the first process gas G1 for forming a thin film on the substrate SUB to the substrate SUB. The first process gas G1 may be a process gas having a characteristic of forming a thin film having a relatively thinner thickness than both side portions in the longitudinal direction (second direction DR 2) of the first linear nozzle portion 110 at the central portion of the first linear nozzle portion 110.

The third linear nozzle section 160 may inject the third process gas G3 for forming a thin film on the substrate SUB to the substrate SUB. The third process gas G3 may be a process gas having a characteristic that a thin film having substantially the same thickness as both side portions in the longitudinal direction (second direction DR 2) of the third linear nozzle section 160 is formed in the central portion of the third linear nozzle section 160. For example, the third process gas G3 may include a different substance from the first process gas G1 and the second process gas G2.

In one embodiment, each of the third linear nozzle segments 160 may include a third gas supply 162 and a third electrode 164.

The third gas supply part 162 may supply the third process gas G3. For example, the third gas supply part 162 may transfer the third process gas G3 received from the outside to the third electrode 164.

The third electrode 164 may be disposed below the third gas supply part 162, and may penetrate and inject the third process gas G3 received from the third gas supply part 162 to the substrate SUB.

The third electrode 164 may extend in the second direction DR 2. The third electrode 164 may be internally formed with a third nozzle 166. The third nozzle 166 may be formed to penetrate the third electrode 164 in the thickness direction (third direction DR 3).

The third electrode 164 may selectively change the third process gas G3 received from the third gas supply part 162 into a plasma state and inject it to the substrate SUB. For example, if the RF power is turned on to apply a high voltage to the third electrode 164, the third process gas G3 penetrating the third electrode 164 may be excited into a plasma state and injected to the substrate SUB. In contrast, if the above-described RF power is turned off without applying a high voltage to the third electrode 164, the third process gas G3 penetrating the third electrode 164 may be injected to the substrate SUB without being excited into a plasma state.

As shown in fig. 9, a distance d5 between the third electrode 164 and the substrate SUB may be constant. That is, the distance between the central portion 164a of the third electrode 164 and the substrate SUB may be substantially the same as the distance between the two side portions 164b of the third electrode 164 in the longitudinal direction (second direction DR 2) and the substrate SUB.

In one embodiment, referring to fig. 4, 8 and 9, a distance d5 between the third electrode 164 and the substrate SUB may be substantially the same as a distance d2 between both side portions 114b of the first electrode 114 and the substrate SUB. That is, the distance d5 between the third electrode 164 and the substrate SUB may be greater than the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB. In this case, as shown in fig. 8, a distance between the central portion 164a of the third electrode 164 and the substrate SUB may be greater than a distance between the central portion 114a of the first electrode 114 and the substrate SUB.

In another embodiment, the distance d5 between the third electrode 164 and the substrate SUB may be substantially the same as the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB. In yet another embodiment, the distance d5 between the third electrode 164 and the substrate SUB may be substantially equal to a median of the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB and the distance d2 between the two side portions 114b and the substrate SUB.

In one embodiment, the third electrode 164 may have substantially the same thickness t5 in the third direction DR 3. That is, the thickness of the central portion 164a of the third electrode 164 may be substantially the same as the thickness of the two side portions 164 b. For example, the upper and lower surfaces of the third electrode 164 may be substantially flat planes. Further, the lengths of the third nozzles 166 penetrating the third electrode 164 in the thickness direction (third direction DR 3) may be the same as each other.

In one embodiment, the third electrodes 164 may have substantially the same width in the first direction DR 1. That is, the width of the central portion 164a of the third electrode 164 in the first direction DR1 may be substantially the same as the width of the both side portions 164b of the third electrode 164 in the first direction DR 1.

According to the present embodiment, when the process gases used in the deposition process include the first process gas G1 and the third process gas G3, the first linear nozzle portion 110 and the third linear nozzle portion 160 having different sectional shapes from each other may be combined to perform the deposition process. Thereby, thin films having a uniform thickness may be formed on the central portion of the substrate SUB and both side portions of the second direction DR 2.

Referring to fig. 10 to 13, the first, second, and third

linear nozzle portions

110, 150, and 160 having different sectional shapes from each other may be differently combined and arranged according to the characteristics of the process gas used in the deposition process. Hereinafter, the description overlapping with the above description will be omitted or simplified.

In one embodiment, referring to fig. 10, the deposition apparatus 13 may include a gas injection unit 103 and a substrate transfer unit 200. Gas injection unit 103 may include at least one second linear nozzle section 150 and at least one third linear nozzle section 160.

For example, as shown in FIG. 10, second linear nozzle portions 150 and third linear nozzle portions 160 may be alternately arranged along first direction DR 1. That is, third linear nozzle portion 160 may be disposed adjacent second linear nozzle portion 150 in first direction DR1 or a direction opposite first direction DR 1.

As another example, it is also possible that second linear nozzle portion 150 is arranged in parallel along first direction DR1 on one side (e.g., the left side) of gas injection unit 103, and third linear nozzle portion 160 is arranged in parallel along first direction DR1 on the other side (e.g., the right side).

The second linear nozzle portion 150 may inject the second process gas G2 to the substrate SUB. The third linear nozzle section 160 may inject the third process gas G3 to the substrate SUB.

In one embodiment, referring to fig. 7, 9 and 10, a distance d5 between the third electrode 164 and the substrate SUB may be substantially the same as a distance d4 between both side portions 154b of the second electrode 154 and the substrate SUB. That is, the distance d5 between the third electrode 164 and the substrate SUB may be smaller than the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB. In this case, as shown in fig. 10, a distance between the central portion 164a of the third electrode 164 and the substrate SUB may be smaller than a distance between the central portion 154a of the second electrode 154 and the substrate SUB.

In another embodiment, the distance d5 between the third electrode 164 and the substrate SUB may be substantially the same as the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB. In yet another embodiment, the distance d5 between the third electrode 164 and the substrate SUB may be substantially equal to a median of the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB and the distance d4 between the two side portions 154b and the substrate SUB.

According to the present embodiment, when the process gases used in the deposition process include the second process gas G2 and the third process gas G3, the second linear nozzle section 150 and the third linear nozzle section 160 having different sectional shapes from each other may be combined to perform the deposition process. Thereby, thin films having a uniform thickness may be formed on the central portion of the substrate SUB and both side portions of the second direction DR 2.

In one embodiment, referring to fig. 11, the deposition apparatus 14 may include a gas injection unit 104 and a substrate transfer unit 200. Gas injection unit 104 may include at least one first linear nozzle section 110 and at least one second linear nozzle section 150.

For example, as shown in fig. 11, the first linear nozzle portions 110 and the second linear nozzle portions 150 may be alternately arranged along the first direction DR 1. That is, second linear nozzle portion 150 may be disposed adjacent first linear nozzle portion 110 in first direction DR1 or in a direction opposite first direction DR 1.

As another example, it may be possible that the first linear nozzle portions 110 are arranged in parallel along the first direction DR1 at one side (e.g., left side) of the gas injection unit 104, and the second linear nozzle portions 150 are arranged in parallel along the first direction DR1 at the other side (e.g., right side).

The first linear nozzle portion 110 may inject the first process gas G1 to the substrate SUB. The second linear nozzle portion 150 may inject the second process gas G2 to the substrate SUB.

In one embodiment, referring to fig. 4, 7 and 11, a distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB may be greater than a distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB. A distance d4 between the two side portions 154b of the second electrode 154 and the substrate SUB may be substantially the same as a distance d2 between the two side portions 114b of the first electrode 114 and the substrate SUB.

In another embodiment, the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB may be substantially the same as the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB. In yet another embodiment, an intermediate value of the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB and the distance d4 between the two side portions 154b and the substrate SUB may be substantially equal to an intermediate value of the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB and the distance d2 between the two side portions 114b and the substrate SUB.

According to the present embodiment, when the process gases used in the deposition process include the first process gas G1 and the second process gas G2, the first linear nozzle portion 110 and the second linear nozzle portion 150 having different sectional shapes from each other may be combined to perform the deposition process. Thereby, thin films having a uniform thickness may be formed on the central portion of the substrate SUB and both side portions of the second direction DR 2.

In one embodiment, referring to fig. 12 and 13, the deposition apparatus 15 may include a gas injection unit 105 and a substrate transfer unit 200. Gas injection unit 105 may include at least one first linear nozzle portion 110, at least one second linear nozzle portion 150, and at least one third linear nozzle portion 160.

For example, as shown in FIG. 12, the first linear nozzle portion 110, the second linear nozzle portion 150, and the third linear nozzle portion 160 may be alternately arranged along the first direction DR 1. That is, second linear nozzle portion 150 may be disposed adjacent first linear nozzle portion 110 in first direction DR1, and third linear nozzle portion 160 may be disposed adjacent first linear nozzle portion 110 in a direction opposite first direction DR 1.

As another example, as shown in fig. 13, it is also possible that the first linear nozzle portions 110 are arranged in parallel along the first direction DR1 on one side (e.g., left side) of the gas injection unit 105, the second linear nozzle portions 150 are arranged in parallel along the first direction DR1 on the other side (e.g., right side), and the second linear nozzle portions 150 are arranged in parallel along the first direction DR1 at the center between the one side and the other side.

The first linear nozzle portion 110 may inject the first process gas G1 to the substrate SUB. The second linear nozzle portion 150 may inject the second process gas G2 to the substrate SUB. The third linear nozzle section 160 may inject the third process gas G3 to the substrate SUB.

In one embodiment, referring to fig. 4, 7, 9, and 12, a distance d5 between the central portion 164a of the third electrode 164 and the substrate SUB may be greater than a distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB, and may be less than a distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB. In addition, a distance d5 between the two side portions 164b of the third electrode 164 and the substrate SUB may be substantially the same as a distance d2 between the two side portions 114b of the first electrode 114 and the substrate SUB and a distance d4 between the two side portions 154b of the second electrode 154 and the substrate SUB.

In another embodiment, the distance d5 between the third electrode 164 and the substrate SUB may be substantially equal to a median of the distance d1 between the central portion 114a of the first electrode 114 and the substrate SUB and the distance d2 between the two side portions 114b and the substrate SUB. Further, the distance d5 between the third electrode 164 and the substrate SUB may be substantially equal to a middle value of the distance d3 between the central portion 154a of the second electrode 154 and the substrate SUB and the distance d4 between the two side portions 154b and the substrate SUB.

According to the present embodiment, when the process gases used in the deposition process include the first process gas G1, the second process gas G2, and the third process gas G3, the first linear nozzle portion 110, the second linear nozzle portion 150, and the third linear nozzle portion 160 having different sectional shapes from each other may be combined to perform the deposition process. Thereby, thin films having a uniform thickness may be formed on the central portion of the substrate SUB and both side portions of the second direction DR 2.

The present invention is applicable to various deposition apparatuses. For example, the present invention may be applicable to a deposition apparatus for manufacturing a display apparatus included in a computer, a notebook computer, a mobile phone, a smart tablet computer, a Portable Media Player (PMP), a Personal Digital Assistant (PDA), an MP3 player, and the like.

The above description has been made with reference to the exemplary embodiments of the present invention, but it will be understood by those skilled in the art that various modifications and changes may be made to the present invention without departing from the scope of the idea and field of the present invention as set forth in the claims.

Claims

1. Deposition apparatus, characterized in that it comprises:

a gas injection unit including a plurality of linear nozzle portions arranged in parallel along a first direction;

a substrate transfer unit that reciprocally transfers the substrate along the first direction below the gas injection unit; and

a deposition chamber accommodating the gas injection unit and the substrate transfer unit,

wherein each of the plurality of linear nozzle parts includes:

a gas supply part for supplying a process gas; and

an electrode extending in a second direction perpendicular to the first direction and jetting the process gas received from the gas supply part to the substrate through a nozzle formed inside,

the distance between the central portion of the electrode and the substrate is different from the distance between the two side portions of the electrode in the length direction and the substrate.

2. The deposition apparatus of claim 1, wherein a distance between the electrode and the substrate increases away from the central portion of the electrode.

3. The deposition apparatus of claim 2, wherein a thickness of the electrode decreases away from the central portion of the electrode.

4. The deposition apparatus of claim 1, wherein a distance between the electrode and the substrate decreases away from the central portion of the electrode.

5. The deposition apparatus of claim 4, wherein a thickness of the electrode increases away from the central portion of the electrode.

6. The deposition apparatus according to claim 1, wherein distances between the central portion of the electrode included in each of the plurality of linear nozzle portions and the substrate are the same as each other.

7. Deposition apparatus, characterized in that it comprises:

a substrate transfer unit that reciprocally transfers a substrate along the first direction below the gas injection unit; and

wherein a first linear nozzle portion of the plurality of linear nozzle portions includes:

a first gas supply part supplying a first process gas; and

a first electrode extending in a second direction perpendicular to the first direction, and a central portion of the first electrode being spaced apart from the substrate by a first distance, and the first electrode injecting the first process gas received from the first gas supply part to the substrate through a first nozzle formed inside,

the second linear nozzle portion adjacent to the first linear nozzle portion in the first direction includes:

a second gas supply part supplying a second process gas different from the first process gas; and

a second electrode extending in the second direction, and a central portion of the second electrode is spaced apart from the substrate by a second distance greater than the first distance, and the second electrode injects the second process gas received from the second gas supply portion to the substrate through a second nozzle formed inside.

8. The deposition apparatus of claim 7,

a distance between the first electrode and the substrate increases with distance from the central portion of the first electrode, an

A distance between the second electrode and the substrate decreases with distance from the central portion of the second electrode.

9. The deposition apparatus of claim 8,

a thickness of the first electrode decreases with distance from the central portion of the first electrode, an

The thickness of the second electrode increases with distance from the central portion of the second electrode.

10. Deposition apparatus according to claim 8,

a third linear nozzle portion adjacent to the first linear nozzle portion in a direction opposite to the first direction includes:

a third gas supply part supplying a third process gas different from the first and second process gases; and

a third electrode extending in the second direction, and a central portion of the third electrode is spaced apart from the substrate by a third distance greater than the first distance and less than the second distance, and the third electrode injects the third process gas received from the third gas supply portion to the substrate through a third nozzle formed inside,

wherein a distance between the central portion of the third electrode and the substrate is equal to a distance between both side portions of the third electrode in a length direction and the substrate.