KR20220136563A - An apparatus for manufacturing SiC member, a method for manufacturing SiC member, and a method for manufacturing a focus ring - Google Patents

Abstract

The present invention relates to an apparatus for manufacturing a silicon carbide member, a method for manufacturing the silicon carbide member, and a method for manufacturing a focus ring. The apparatus for manufacturing the silicon carbide member comprises: a main body; a gas supply unit installed on one side of the main body and supplying a gas into the main body; a gas discharge unit installed on the other side of the main body and discharging the gas in the main body to the exterior; and a laminate disposed in the main body and in which a plurality of base materials each having a ring shape are laminated. The laminate is rotated so that a vortex of the gas is generated along the axial direction of the laminate. An objective of the present invention is to provide the apparatus for manufacturing the silicon carbide member, capable of shortening a process time, the method for manufacturing the silicon carbide member, and the method for manufacturing the focus ring.

Description

BACKGROUND ART An apparatus for manufacturing SiC member, a method for manufacturing SiC member, and a method for manufacturing a focus ring

Embodiments relate to an apparatus for manufacturing a silicon carbide member, a method for manufacturing a silicon carbide member, and a method for manufacturing a focus ring.

In semiconductor manufacturing, plasma is used to form a thin film on a wafer or a substrate or to form a pattern on the thin film. A typical apparatus using such plasma includes a semiconductor manufacturing apparatus such as a plasma deposition apparatus or a plasma etching apparatus.

Plasma increases the reactivity by making gaseous chemical substances into highly reactive radicals. A thin film is formed on a wafer or a substrate by reacting a gaseous deposition gas in a plasma atmosphere having such highly reactive radicals, or a pattern is formed on the thin film.

In order to realize a high-quality semiconductor, it is very important to form a high-quality film and a uniform thin film. To meet these requirements, the density of the plasma region must be uniform.

Usually, in the plasma region, the plasma density at the edge is lower than the plasma density at the center. To compensate for this, a plasma region having a more uniform plasma density is formed by placing a focus ring around the wafer or substrate.

The conventional focus ring is made of silicon. When the focus ring made of silicon is used in a semiconductor manufacturing apparatus, it must be replaced frequently as the focus ring is worn out due to the reaction with plasma, and the process delay and cost of consumables due to replacement increase. there is a problem.

To improve this, a focus ring made of silicon carbide (SiC) has been developed.

1 shows a conventional silicon carbide member manufacturing apparatus.

As shown in Fig. 1, the conventional silicon carbide member manufacturing apparatus is composed of an upper cover 1a and a lower cover 1b. As the lower cover 1b moves up and down, it is sealed by the upper cover 1a and the lower cover 1b. For example, after the lower cover 1b is lowered, the laminate 3 in which the base material is laminated is mounted on the lower cover 1b. Thereafter, the lower cover 1b is raised and fastened to the upper cover 1a. Thereafter, a deposition process is performed to form a silicon carbide layer on the base material of the laminate 3 to manufacture a silicon carbide member. After the vacuum is released and the lower cover 1b is lowered to be separated from the upper cover 1a, the corresponding silicon carbide member may be removed.

In the conventional silicon carbide member manufacturing apparatus, after gases for forming a silicon carbide layer are supplied between the upper cover 1a and the lower cover 1b, these gases are mixed to obtain a uniform gas density, and then wait for deposition The process is carried out.

However, in the related art, there is a problem that it takes a lot of time for these gases to be mixed to reach a uniform gas density. That is, there is a problem that the process takes a long time.

In addition, there is a problem in that it is difficult to obtain a uniform gas density because the gases are not mixed well due to the movement path through which the gases flow from the upper side to the lower side.

In addition, in the related art, since the entire lower region of the upper cover 1a is opened to the outside as the lower cover 1b is lowered each time the lower cover 1b is lowered, the lower cover 1b and the lower cover 1b after the lower cover 1b and the upper cover 1a are fastened. It takes a lot of time to form a vacuum in the space between the upper cover 1a.

Also, in the related art, since the entire lower region of the upper cover 1a is opened to the outside as the lower cover 1b is lowered every time the lower cover 1b is lowered, the lower cover 1b and the lower cover 1b and the upper cover 1a are fastened to each other. There is a problem in that it takes a lot of time to heat the plurality of base materials 3 positioned in the space between the upper cover 1a to the process temperature.

The embodiments aim to solve the above and other problems.

Another object of the embodiment is to provide an apparatus for manufacturing a silicon carbide member, a method for manufacturing a silicon carbide member, and a method for manufacturing a focus ring, which can reduce process time.

Still another object of the embodiment is to provide an apparatus for manufacturing a silicon carbide member capable of obtaining a uniform gas density, a method for manufacturing a silicon carbide member, and a method for manufacturing a focus ring.

Still another object of the embodiment is to provide an apparatus for manufacturing a silicon carbide member, a method for manufacturing a silicon carbide member, and a method for manufacturing a focus ring, in which loading/unloading of a laminate is accurate and easy.

Another object of the embodiment is to provide an apparatus for manufacturing a silicon carbide member, a method for manufacturing a silicon carbide member, and a method for manufacturing a focus ring, which can shorten a process time by minimizing an open space.

According to a first aspect of an embodiment to achieve the above object, an apparatus for manufacturing a silicon carbide member includes: a main body; a gas supply unit installed on one side of the main body and supplying gas into the main body; a gas discharge unit installed on the other side of the main body and discharging gas in the main body to the outside; and a laminate in which a plurality of base materials having a ring shape are respectively laminated and disposed in the body, wherein the laminate is rotated to generate a vortex by the gas along an axial direction of the laminate.

According to a second aspect of the embodiment, a focus ring manufacturing method includes: manufacturing a silicon carbide member by the silicon carbide member manufacturing apparatus; cutting at least one region of the manufactured silicon carbide member; and separating at least one silicon carbide layer from the base material.

According to a third aspect of the embodiment, a method for manufacturing a silicon carbide member includes: loading a laminate in which a plurality of base materials having a ring shape are respectively stacked into a body; injecting gas into the body and rotating the laminate to generate a vortex by the gas along an axial direction of the laminate; manufacturing a plurality of silicon carbide members by using the gas flowing by the generated vortex to form a silicon carbide layer on each surface of the plurality of base materials of the laminate; and unloading the laminate in which the plurality of silicon carbide members prepared above are respectively stacked.

According to a fourth aspect of the embodiment, a method for manufacturing a focus ring includes: manufacturing a silicon carbide member by the silicon member manufacturing method; cutting at least one region of the manufactured silicon carbide member; and separating at least one silicon carbide layer from the base material.

According to a fifth aspect of the embodiment, an apparatus for manufacturing a silicon carbide member includes: a main body; a gas supply unit installed on one side of the main body and supplying gas into the main body; a gas discharge unit installed on the other side of the main body and discharging gas in the main body to the outside; a laminate in which a plurality of base materials having a ring shape are stacked, respectively, disposed in the body; and at least one or more first rotating bodies disposed in the main body, wherein the at least one first rotating body is disposed along the periphery of the outer surface of the laminate and adjacent to the outer surface of the laminate, the at least one The above first rotating body is rotated to generate a vortex by the gas along the axial direction of the first rotating body.

According to a sixth aspect of the embodiment, a focus ring manufacturing method includes: manufacturing a silicon carbide member by the silicon carbide member manufacturing apparatus; cutting at least one region of the manufactured silicon carbide member; and separating at least one silicon carbide layer from the base material.

According to a seventh aspect of the embodiment, a method for manufacturing a silicon carbide member includes: loading a laminate in which a plurality of base materials having a ring shape are respectively stacked into a body; injecting gas into the body and rotating the rotating body to generate a vortex by the gas along the axial direction of the rotating body; manufacturing a plurality of silicon carbide members by using the gas flowing by the generated vortex to form a silicon carbide layer on each surface of the plurality of base materials of the laminate; and unloading the laminate in which the plurality of silicon carbide members prepared above are respectively stacked.

According to an eighth aspect of the embodiment, a method for manufacturing a focus ring includes: manufacturing a silicon carbide member by the silicon carbide member manufacturing method; cutting at least one region of the manufactured silicon carbide member; and separating at least one silicon carbide layer from the base material.

Effects of the silicon carbide member manufacturing apparatus, the silicon carbide member manufacturing method, and the focus ring manufacturing method according to the embodiment will be described as follows.

According to at least one of the embodiments, a deposition process time can be remarkably shortened, and a silicon carbide member including a silicon carbide layer having a uniform thickness and excellent film quality can be obtained.

As shown in Figures 2 to 6, a plurality of graphite base material 12 is laminated body 140 is rotated by rotating the eddy current (eddy, 160) is generated in the body 121, such a vortex (160) As a result, the deposition gases are mixed more quickly and easily in the body 121, and a uniform gas density is maintained in the entire area of the body 121, so that the silicon carbide layer (shown in FIG. 22) has a uniform thickness and excellent film quality. The silicon carbide member 10 including 13) may be manufactured.

In addition, as shown in FIGS. 7A, 7B, 12A and 12B, the rotation of the stacked body 140 by the plurality of rotating bodies 155 disposed adjacent to the inner surface 121a of the main body 121 is By rotating the deposition gases from the position adjacent to the stacked body 140 and spreading them around, a vortex is more easily generated, thereby further maximizing the effect of shortening the process time and obtaining a uniform thickness and excellent film quality. can

In the embodiment, the deposition process may be performed on the stacked body 140 in a state lying down in the horizontal direction as shown in FIGS. 2 to 6 , and as shown in FIGS. The deposition process may be performed in the state.

In addition, as shown in FIG. 13 , irregularities 149 are formed on the outer surface 140a of the laminate 140 , or irregularities 128 are formed on the inner surface 121a of the body 121 as shown in FIG. 14 . As a result, deposition gases are diffusely reflected by the irregularities 128 and 149, so that more rapid vortex generation is possible.

In addition, as shown in FIG. 15 , a separate rotating body 150 is provided instead of the stacked body 140 , and there is a technical effect that a vortex can be generated by the rotating body 150 .

In addition, as shown in FIG. 16 , an additional rotating body 155 is further provided in addition to the rotating body 150 shown in FIG. 15 , so that more rapid vortex generation is possible.

In addition, as shown in FIG. 17 , a heating module 110 and a cooling module 130 are provided at each of the front and rear ends of the processing module 120 in which the deposition process is performed, and are pre-heated by the heating module 110 and , by cooling the stacked body 140 heated by the processing module 120 in the cooling module 130, the process time can be significantly reduced.

In addition, according to at least one of the embodiments, an opening for loading or unloading a stack is installed on a side surface of the processing module, so that the stack can be moved in a straight line in a horizontal direction. Accordingly, the stack can be loaded into the processing module more quickly and unloaded from the processing module more quickly, so that the processing time can be significantly shortened.

In addition, according to at least one of the embodiments, an opening for loading or unloading a stack is installed on a side surface of the processing module, so that the stack can be moved in a straight line in a horizontal direction. Accordingly, since the laminate is movable along a straight line, the laminate can be loaded or unloaded without being caught in the opening and closing opening, so that defects such as damage to the laminate can be prevented.

In addition, according to at least one of the embodiments, the opening and closing openings are installed only on a part of the side surface of the processing module, so that even if the opening and closing openings are opened during loading or unloading, the opening and closing openings are only a partial area compared to the entire area of the side surfaces of the processing module Since it does not take much time to easily raise the vacuum to the processing temperature of the processing module for opening and closing, there is a special technical effect that the processing time can be dramatically shortened.

Also, according to at least one of the embodiments, the heating module may be installed at the front end of the processing module and the cooling module may be installed at the rear end of the processing module. Since the plurality of graphite base materials stacked on the laminate are heated by the heating module before being loaded into the processing module, it is easy to raise the graphite base material to the process temperature in the processing module.

Further scope of applicability of embodiments will become apparent from the following detailed description. However, it should be understood that the detailed description and specific embodiments, such as preferred embodiments, are given by way of example only, since various changes and modifications within the spirit and scope of the embodiments may be clearly understood by those skilled in the art.

1 shows a conventional silicon carbide member manufacturing apparatus.
Fig. 2 is a perspective view showing an apparatus for manufacturing a silicon carbide member according to the first embodiment.
3 is a cross-sectional side view of the silicon carbide member manufacturing apparatus according to the first embodiment.
4A is a side cross-sectional view illustrating a state in which gas is rotated according to the rotation of the laminate.
4B is a cross-sectional view viewed from the front showing a state in which a vortex is generated by the rotation of the laminate.
5 shows loading/unloading of a laminate in the silicon carbide member manufacturing apparatus according to the first embodiment.
6 is an enlarged view of area A of the laminate in FIG. 5 .
7A is a cross-sectional side view of the silicon carbide member manufacturing apparatus according to the second embodiment.
7B is a long-axis cross-sectional view showing an apparatus for manufacturing a silicon carbide member according to a second embodiment.
8 is a perspective view showing an apparatus for manufacturing a silicon carbide member according to a third embodiment.
9 is a cross-sectional view of the silicon carbide member manufacturing apparatus according to the third embodiment as viewed from above.
Fig. 10 is a cross-sectional view of the silicon carbide member manufacturing apparatus according to the third embodiment as seen from the front.
11 shows loading/unloading of a laminate in the silicon carbide member manufacturing apparatus according to the third embodiment.
12A is a cross-sectional view of the silicon carbide member manufacturing apparatus according to the fourth embodiment as viewed from above.
12B is a cross-sectional view of the silicon carbide member manufacturing apparatus according to the fourth embodiment as viewed from the front.
13 is an enlarged view showing a laminate of the silicon carbide member manufacturing apparatus according to the fifth embodiment.
14 is a cross-sectional view of the silicon carbide member manufacturing apparatus according to the sixth embodiment as viewed from the front.
Fig. 15 is a cross-sectional side view of the silicon carbide member manufacturing apparatus according to the seventh embodiment.
Fig. 16 is a cross-sectional side view of the silicon carbide member manufacturing apparatus according to the eighth embodiment.
17 is a cross-sectional view showing an apparatus for manufacturing a silicon carbide member according to a ninth embodiment.
18 shows a method for manufacturing a silicon carbide member according to an embodiment.
19 is a flowchart illustrating in detail S20 of FIG. 18 .
20 is a perspective view showing a graphite base material.
21 is a perspective view showing a silicon carbide member.
22 is a cross-sectional view showing a silicon carbide member.
23 to 25 show a method of manufacturing a focus ring.
26 shows a semiconductor manufacturing apparatus according to an embodiment.

Hereinafter, the embodiments disclosed in the present specification will be described in detail with reference to the accompanying drawings, but the same or similar components are assigned the same reference numbers regardless of reference numerals, and redundant description thereof will be omitted. The suffixes 'module' and 'part' for the components used in the following description are given or mixed in consideration of ease of writing the specification, and do not have distinct meanings or roles by themselves. In addition, the accompanying drawings are for easy understanding of the embodiments disclosed in the present specification, and the technical spirit disclosed in the present specification is not limited by the accompanying drawings. Also, when an element, such as a layer, region, or substrate, is referred to as being 'on' another component, this includes that it is directly on the other element or there may be other intermediate elements in between. do.

An embodiment is a silicon carbide member manufacturing apparatus capable of obtaining a uniform gas density by rapidly mixing gases by a vortex generated by rotating the gases using a laminate loaded in the body or a rotating body installed in the body, thereby shortening the process time, A method for manufacturing a silicon carbide member, and a method for manufacturing a focus ring are provided.

According to the embodiment, a silicon carbide member may be manufactured by forming a silicon carbide layer on the surface of the base material by the gases described above.

A focus ring may be manufactured using a silicon carbide member. The focus ring is mounted on the semiconductor manufacturing apparatus and serves to guide the formation of a uniform plasma region.

In an embodiment, the silicon carbide member is the base substrate for manufacturing the focus ring. For example, the silicon carbide member has a ring shape. Since the focus ring is manufactured using a silicon carbide member, it may have a ring shape. When a focus ring having a ring shape is installed in a semiconductor manufacturing apparatus, a wafer or a substrate may be positioned in the focus ring.

That is, since the focus ring is disposed on the periphery of the electrostatic chuck of the semiconductor manufacturing apparatus or at the edge of the electrostatic chuck, the focus ring may be positioned on the periphery of the wafer or substrate when the wafer or substrate is seated on the electrostatic chuck. Therefore, since the size of the plasma region having a uniform plasma density is at least larger than the size of the entire region of the wafer or substrate, the entire region of the wafer or substrate is carbonized with excellent film quality and uniform thickness due to the uniform density of the plasma region. A silicon layer can be obtained.

In order for the focus ring to be used for a long time in a semiconductor manufacturing apparatus, it must have characteristics such as excellent fire resistance, heat resistance, and durability. To this end, the focus ring may include, but is not limited to, silicon carbide.

In an embodiment, the silicon carbide member used to manufacture the focus ring may be formed by a deposition method. To this end, a graphite base material may be used as the base base material, but the present invention is not limited thereto. A silicon carbide layer is formed on the graphite base material through a deposition process, so that a silicon carbide member may be manufactured. This will be described in detail later.

In embodiments, at least one focus ring may be manufactured by machining a silicon carbide member. This will be described in detail later.

As described above, according to the embodiment, a vortex may be generated by rotating the gases using a laminate or a rotating body.

A rotating body having a cylindrical shape is provided in a body having a cylindrical inner surface. After the fluid is filled in the space between the inner surface of the main body and the outer surface of the rotating body, when the rotating body is rotated according to a preset condition, the fluid is rotated along the rotational direction of the rotating body.

In the rotating fluid, a force may be generated by the fluid adjacent to the outer surface of the rotating body toward the body by centrifugal force and Coriolis force. As the rotational speed of the rotating body increases, it becomes unstable, and eddy currents rotating in opposite directions along the axial direction of the rotating body may be generated.

The embodiment can obtain a uniform gas density by rapidly mixing the gases supplied in the body using a vortex using the principle of the rotating fluid flow.

Although not described in the following embodiments, the diameter of the rotating body (or stacked body), the distance between the outer surface 140a of the rotating body and the inner surface of the main body, etc. may be optimally designed to generate a vortex. For example, the diameter of the rotating body (or stacked body) may be equal to or greater than the distance between the outer surface 140a of the rotating body and the inner surface of the main body, but is not limited thereto.

Hereinafter, an apparatus for manufacturing a silicon member will be described with reference to various embodiments.

[First embodiment]

Fig. 2 is a perspective view showing an apparatus for manufacturing a silicon carbide member according to the first embodiment. 3 is a cross-sectional side view of the silicon carbide member manufacturing apparatus according to the first embodiment.

2 and 3 , the apparatus 100 for manufacturing a silicon carbide member according to the first embodiment may include a processing module 120 . The processing module 120 may perform a deposition process for manufacturing the silicon carbide member ( 10 of FIGS. 21 and 22 ).

The processing module 120 may include a body 121 , a gas supply unit 125 , a gas discharge unit 126 , and a lamination material 140 . The processing module 120 may include many more components.

The body 121 is a member having an external shape of the processing module 120 , and an interior thereof may be an empty space. For example, the body 121 may be integrally formed, or may be formed by fastening at least two or more members.

The body 121 may be elongated in a horizontal direction. Although this will be described later, the arrangement of the laminate 140 in which a plurality of graphite base materials ( 12 in FIG. 5 ) are stacked is considered. The stacked body 140 may have a long shape along one direction since a plurality of graphite base materials 12 are stacked. Accordingly, the multilayer body 140 may be disposed in the main body 121 so that the long axis direction of the multilayer body 140 having a long axis along one direction and the long axis direction of the main body 121 are the same. That is, the laminate 140 may be disposed in the body 121 so that the long axis direction of the laminate 140 is the same as the horizontal direction.

The inner surface 121a of the body 121 may have a cylindrical shape. The main body 121 may have a cylindrical outer surface 140a, but is not limited thereto.

Various components for connecting the outside and the inside may be installed in the main body 121 in various areas. For example, a gas supply unit 125 , a gas discharge unit 126 , a heater ( 124 in FIG. 17 ), and the like may be installed.

The gas supply unit 125 may be installed on one side of the body 121 to supply gas into the body 121 . Here, the gas is a deposition gas, for example, MTS (Methyltrichlorosilane) source, hydrogen, etc. may be, and after the MTS source and hydrogen are mixed, a silicon carbide layer (13 in FIG. 22) is deposited on the surface of the graphite base material 12. have. The gas discharge unit 126 may be installed on the other side of the main body 121 to discharge the gas in the main body 121 to the outside.

For example, the gas supply unit 125 may be installed on an upper region of the main body 121 , and the gas discharge unit 126 may be installed on an upper region of the main body 121 . For example, the gas supply part 125 is installed on an area of the upper side of the main body 121 adjacent to the first opening 122 , and the gas exhaust part 126 is located on the main body 121 adjacent to the second opening 123 . It may be installed on one area of the lower side. For example, the gas supply unit 125 and the gas discharge unit 126 may be disposed to be spaced apart from each other as far as possible, but the present invention is not limited thereto.

The gas discharge unit 126 may be connected to a vacuum pump (not shown) to easily discharge gases or air in the body 121 to the outside by the vacuum pump. After the stacked body 140 is loaded into the main body 121 , the air in the main body 121 is discharged to the outside by a vacuum pump, whereby a vacuum may be formed in the main body 121 . While the body 121 performs the deposition process, deposition gases may be continuously supplied to the body 121 , and the remaining deposition gases used for deposition in the body 121 may be discharged to the outside by a vacuum pump.

Although not shown, the gas supply unit 125 and the gas discharge unit 126 may be disposed adjacent to the same area of the body 121 or disposed on upper and lower sides of the body 121 facing each other vertically. The gas supply unit 125 and the gas discharge unit 126 may be optimally designed so that a vortex ( 160 of FIG. 4B ) by gases is easily formed in the body 121 .

Although not shown, at least one nitrogen gas supply unit 125 for supplying nitrogen may be installed in the region of the body 121 .

The heater ( 124 of FIG. 17 ) may be installed on at least one area of the body 121 . The heater 124 may heat the plurality of graphite base materials ( 12 in FIG. 5 ) of each of the stacked bodies 140 to the process temperature. The process temperature may be an optimum temperature for depositing deposition gases on each of the plurality of graphite base materials ( 12 in FIG. 5 ) to form a silicon carbide layer ( 13 in FIG. 22 ) of the stacked body 140 .

The processing module 120 may include a first opening 122 and a second opening 123 .

The first opening 122 and the second opening 123 may be installed to correspond to each other on the side surface of the main body 121 . Each of the first opening 122 and the second opening 123 may be a door that can be opened and closed. For example, when each of the first opening 122 and the second opening 123 is closed, the inside and the outside of the processing module 120 may be spatially blocked. For example, when each of the first opening 122 and the second opening 123 is opened, the inside and the outside of the processing module 120 are spatially connected through each of the first opening 122 and the second opening 123 . can

For example, the first opening 122 may be used for loading the stacked body 140 . That is, the first opening 122 may be opened, and the first opening 122 may be closed after the stacked body 140 is loaded into the body 121 through the first opening 122 . For example, the second opening 123 may be opened, and the second opening 123 may be closed after the stacked body 140 positioned in the main body 121 is unloaded to the outside through the second opening 123 . .

For example, each of the first opening 122 and the second opening 123 may have a size (or area) through which the stacked body 140 can enter and exit. The size of the first opening 122 may be larger than the size of the stack 140 . The size of the second opening 123 may be larger than the size of the stack 140 .

The stacked body 140 is accessible through the first opening 122 and the second opening 123 . Although one stacked body 140 is illustrated in FIG. 5 for convenience, two or more stacked bodies 140 may be loaded into the processing module 120 . For example, two or more stacked bodies 140 may be simultaneously moved and loaded into the processing module 120 . As another example, each stack 140 may be sequentially moved and loaded into the processing module 120 . Accordingly, although each stack 140 is moved individually, the deposition process in the processing module 120 may be performed on two or more stacks 140 .

For example, as shown in FIG. 5 , when a plurality of fastening members ( 142 in FIG. 6 ) stacked on the stack 140 are disposed along the horizontal direction and moved along the horizontal direction, the first opening 122 and The size of each of the second openings 123 may be greater than the diameter of the plurality of graphite base materials 12 mounted on the laminate 140 . Also, in the embodiment, the first opening 122 and the second opening 123 may have a rectangular shape in which a horizontal width is greater than a vertical width, but is not limited thereto.

For example, each of the first opening 122 and the second opening 123 may be installed in the central region of the side surface of the main body 121 , but the present invention is not limited thereto.

Although the figure shows that the first opening 122 and the second opening 123 are respectively installed on different sides of the main body 121 , the present invention is not limited thereto. That is, although not shown, each of the first opening 122 and the second opening 123 may be installed on the same side of the main body 121 .

For example, when the first opening 122 and the second opening 123 are respectively installed on different sides of the main body 121 , the first opening 122 is a member for loading the stacked body 140 and the second The opening 123 may be a member for unloading the stack 140 .

For example, when each of the first opening 122 and the second opening 123 is installed on the same side of the main body 121 , the first opening 122 and the second opening 123 are one opening and closing in a stacked body. It may be a member for loading and unloading of 140 . That is, the stacked body 140 may be loaded into the body 121 through one opening, and the stacked body 140 positioned in the body 121 may be unloaded to the outside through the corresponding opening.

Meanwhile, according to the first embodiment, the silicon carbide member (FIG. 21 and FIG. 21 and It is possible to shorten the deposition process time for depositing silicon carbide on the graphite base material 12 in order to manufacture 10 of FIG. 22 .

In addition, according to the first embodiment, the silicon carbide layer deposited on the graphite base material 12 by easily mixing the gases by the vortex 160 phenomenon to have a uniform gas density in the entire area within the body 121 . (13 in FIG. 22) can be formed with a constant thickness and excellent film quality.

After the stacked body 140 on which the plurality of graphite base materials 12 are stacked is loaded and seated in the body 121 , a vacuum may be formed and the stacked body 140 may be heated to a preset process temperature. Subsequently, at least one or more deposition gases may be supplied into the body 121 . Deposition gases may include, for example, an MTS source, hydrogen, and the like, but are not limited thereto. As the deposition gases, other types of gases may be used as long as the silicon carbide layer (13 of FIG. 22 ) can be deposited on the surface of the graphite base material 12 .

Meanwhile, the stacked body 140 of the embodiment may be rotated to generate a vortex. The stacked body 140 may have a cylindrical shape having a predetermined radius.

A space exists between the outer surface 140a of the stacked body 140 and the inner surface 121a of the body 121 , and deposition gases may be supplied into the space. Accordingly, as the stacked body 140 is rotated, the deposition gases supplied to the space between the outer surface 140a of the stacked body 140 and the inner surface 121a of the body 121 are supplied to the outer circumferential surface of the stacked body 140 . It can be rotated along its perimeter. That is, the deposition gases may be rotated in the same direction as the rotation direction of the stacked body 140 .

The deposition gases supplied into the body 121 may be quickly and easily mixed by the rotation of the stacked body 140 .

Meanwhile, the radius of the stacked body 140 , the distance between the outer surface 140a of the stacked body 140 and the inner surface 121a of the body 121 , and the rotation speed of the stacked body 140 may be optimized. have.

In this case, as shown in FIG. 4A , the deposition gases initially rotated adjacent to the outer circumferential surface of the stacked body 140 generate a force to go out toward the body 121 by the rotational speed of the stacked body 140 , , the deposition gases may be gradually moved from the stacked body 140 to a position adjacent to the inner surface 121a of the body 121 .

As such, the deposition gases positioned adjacent to the inner surface 121a of the body 121 may be rotated in the same direction as the rotation direction of the stacked body 140 in a state adjacent to the inner surface 121a of the body 121 . . As described above, the deposition gases rotated in a state adjacent to the inner surface 121a of the main body 121 are gradually unstable, and eventually, as shown in FIG. 4B , a direction different from the rotational direction of the stacked body 140 , that is, A vortex 160 rotating along the axial direction of the stacked body 140 may be generated. This vortex 160 may be a flow of deposition gases. At this time, the adjacent vortex 160 may affect each other.

Adjacent eddy currents 160 may flow in opposite directions. For example, as shown in FIG. 4B , when the deposition gas flows in a clockwise direction by the first vortex, that is, it flows from the stacked body 140 toward the body 121 , and the inner surface 121a of the body 121 is When flowing along, flowing toward the laminate 140 , and flowing along the outer surface 140a of the laminate 140 , the second vortex adjacent to the right side of the first vortex may flow in a counterclockwise direction.

That is, the second vortex adjacent to the right side of the first vortex flows from the inner surface 121a of the main body 121 to the laminate 140 , and flows along the outer surface 140a of the laminate 140 , and the main body 121 . ) and may flow along the outer surface 140a of the main body 121 .

Accordingly, the deposition gases initially supplied into the body 121 by the rotation of the stacked body 140 are rotated along the periphery of the stacked body 140 , and then a vortex formed along the axial direction of the stacked body 140 ( A uniform gas density may be formed in the entire area of the body 121 by the 160 .

Accordingly, the deposition gases supplied into the body 121 are quickly and easily mixed to shorten the deposition process time, and a uniform gas in the entire area within the body 121 due to the rotational motion and the vortex 160 phenomenon. A silicon carbide member (10 in FIGS. 21 and 22) having a silicon carbide layer (13 in FIG. 22) having a uniform thickness and excellent film quality by maintaining the density can be manufactured.

On the other hand, the laminate 140 of the embodiment may be used as a member on which a plurality of graphite base materials 12 are stacked, as well as a rotating body for generating a vortex 160 .

The graphite base material 12 may have a ring shape, as shown in FIG. 20 . That is, the graphite base material 12 may have a ring shape with an open center. The focus ring (17a, 17b in FIG. 25) can be easily manufactured later by the ring shape of the graphite base material 12 as described above. The focus rings 17a and 17b may also have a ring shape.

The focus rings 17a and 17b may be manufactured by a silicon carbide layer 13 deposited on the surface of the graphite base material 12 as shown in FIGS. 21 and 22 . Since the graphite base material 12 has a ring shape, the silicon carbide layer 13 deposited on the surface of the graphite base material 12 may also have a ring shape. The silicon carbide layer 13 may be formed to a predetermined thickness on the entire surface of the graphite base material 12 , that is, the upper surface, the lower surface, the inner surface 121a and the outer surface 140a.

Therefore, in the silicon carbide member 10 including the graphite base material 12 having a ring shape and the silicon carbide layer 13 deposited on the surface thereof, the graphite base material 12 is removed to remove at least one focus ring 17a , 17b) can be prepared. In other words, the focus rings 17a and 17b may be manufactured by the silicon carbide layer ( 13 in FIG. 22 ) of the silicon carbide member 10 . Since the silicon carbide layer (13 in Fig. 22) has a ring shape, the focus rings 17a and 17b can be easily manufactured therefrom.

The stacked body 140 may be disposed in the body 121 . The stacked body 140 is movable. For example, the stacked body 140 is movable by a moving means. A robot arm or a conveyor may be used as the moving means, but the present invention is not limited thereto. For example, the stacked body 140 may be loaded into the body 121 through the first opening 122 , and may be unloaded to the outside through the second opening 123 .

With reference to FIG. 5 , the loading/unloading of the stacked body 140 will be described in detail.

5 shows loading/unloading of a laminate in the silicon carbide member manufacturing apparatus according to the first embodiment.

2 and 5, after each of the plurality of graphite is mounted on the plurality of cradles 143a, the plurality of cradles 143a are fastened to each other to complete the stacked body 140 stacked along one direction. have. At least one stack 140 may be provided.

The stacked body 140 may be moved in a horizontal direction to be loaded into the body 121 through the first opening 122 .

For example, the plurality of fastening members ( 142 of FIG. 6 ) stacked on the provided stack 140 may be disposed in a horizontal direction, and the plurality of graphite base materials 12 may be stacked along the horizontal direction. The stacked body 140 thus prepared may be moved in the horizontal direction as it is and loaded into the body 121 .

Although not shown, the plurality of fastening members ( 142 in FIG. 6 ) stacked on the provided stack 140 may be disposed in a vertical direction, and the plurality of graphite base materials 12 may be stacked along the vertical direction. After the stacked body 140 prepared as described above is rotated from the vertical direction to the horizontal direction, it may be moved along the horizontal direction to be loaded into the main body 121 .

According to the first embodiment, the laminate 140 in which each of the plurality of graphite base materials 12 are stacked is moved in the horizontal direction and the main body through the first opening 122 of the main body 121 positioned on the same line. Since it is loaded in the 121 , the loading time of the stacked body 140 can be shortened.

At least one side of the stacked body 140 loaded in the body 121 may be fixed or caught in a corresponding area of the body 121 . That is, one or both sides of the stacked body 140 may be fixed or caught in the corresponding area of the main body 121 . For example, one side of the stacked body 140 may be connected to the rotation shaft of the motor, and the stacked body 140 may be rotated by the motor to rotate the plurality of graphite base materials 12 provided in the stacked body 140 . As described above, the vortex 160 by the deposition gases may be generated by the rotation of the stacked body 140 .

For example, the stacked body 140 may be fixed to or caught on the body 121 in a state in which a plurality of graphite base materials 12 are stacked in a horizontal direction in the body 121 .

As another example, the stacked body 140 may be fixed to or caught on the body 121 in a state in which a plurality of graphite base materials 12 are stacked in a vertical direction in the body 121 . To this end, the stacked body 140 loaded into the main body 121 in a state in which a plurality of graphite base materials 12 are stacked in a horizontal direction is 90 degrees such that a plurality of graphite base materials 12 are stacked in a vertical direction. After being rotated, it may be fixed or caught on the main body 121 .

After the stacked body 140 is fixed in the main body 121 , a vacuum process, a heating process, a deposition gas supply process, etc. are performed, and the stacked body 140 is rotated to cause a vortex 160 by deposition gases in the body 121 . ) is generated, and the deposition process may be performed in a state in which a uniform gas density is maintained in the entire region of the body 121 . Accordingly, deposition gases are deposited on the surfaces of the plurality of graphite base materials 12 included in the laminate 140 to form the graphite base material 12 and the silicon carbide layer 13 as shown in FIGS. 21 and 22 . The silicon carbide member 10 including the may be manufactured.

The deposition gas supply process and the rotation operation of the laminate 140 may be simultaneously performed, or the rotation operation of the stack body 140 may be performed after the deposition gas supply process is performed.

Thereafter, the space in the body 121 is adjusted to atmospheric pressure, and the laminate 140 is cooled. Thereafter, the stacked body 140 in which the plurality of silicon carbide members 10 are stacked may be unloaded to the outside through the second opening 123 . For example, the stacked body 140 in which the plurality of silicon carbide members 10 are stacked, respectively, may be moved in a horizontal direction so as to move away from the second opening 123 .

According to the first embodiment, the stacked body 140 in which the plurality of silicon carbide members 10 are respectively stacked is unloaded from the second opening 123 of the main body 121 , and the second opening 123 of the main body 121 is unloaded. ) and in the horizontal direction on the same line, the unloading time of the stacked body 140 may be shortened.

A plurality of cradles 143a may be removed from the unloading stack 140 , and the silicon carbide member 10 may be released from each of the removed cradles 143a.

According to the first embodiment, since each of the loading and unloading of the laminate 140 is performed through different openings, that is, the first opening 122 and the second opening 123, the laminate 140 is accurate and can be moved easily. That is, since there is no bending in the movement of the laminate 140 and only linear movement is possible, the laminate 140 can be moved accurately and easily. A guide member (not shown) for guiding the movement of the stacked body 140 may be additionally installed in order to increase the accuracy of the movement of the stacked body 140 .

Meanwhile, as shown in FIG. 6 , the stacked body 140 may include a plurality of fastening members 142 . The fastening member 142 may include a cradle 143a and a fastening protrusion 143b. That is, one fastening member 142 may be formed by one cradle 143a and one fastening protrusion 143b. Each fastening member 142 may be fastened via a fastening protrusion 143b.

The holder 143a and the fastening protrusion 143b may be integrally formed, but the present invention is not limited thereto.

The graphite base material 12 may be mounted on the holder 143a. At least one or more protrusions (not shown) are formed in the holder 143a, and at least one or more grooves (not shown) are formed in the graphite base material 12, so that the protrusions of the holder 143a are inserted into the grooves of the graphite base material 12. Inserted, the graphite base material 12 may be fixed to the cradle (143a). At this time, the fixing force may be such that the graphite base material 12 is not separated from the cradle 143a even if it is rotated at a preset rotation speed of the laminate 140 to generate the vortex 160 in the body 121 .

When the graphite base material 12 is mounted on the cradle 143a, the graphite base material 12 may be disposed to be spaced apart from the cradle 143a. Therefore, as will be described later, the silicon carbide layer 13 may be deposited on all surfaces of the graphite base material 12 by a deposition process. In addition to the method described here, the graphite base material 12 may be mounted on the holder 143a by other methods.

Since the silicon carbide layer (13 in FIG. 22) is deposited on the entire surface of the graphite base material 12, the graphite base material 12 may be mounted on the holder 143a while being spaced apart from the upper side of the holder 143a. In this case, the separation distance may be adjusted by a protrusion provided on the cradle 143a.

For example, the graphite base material 12 may be mounted on each of the cradles 143a of each of the plurality of fastening members 142 . Subsequently, the cradles 143a may be stacked in one direction using the fastening protrusions 143b provided on each of the fastening members 142 . As the holder 143a is laminated, the graphite base material 12 mounted on the holder 143a may also be laminated along one direction. For example, the first fastening protrusion provided on the lower side of the first holder may pass through the center of the graphite base material 12 mounted on the upper side of the second holder to be fastened to the upper side of the second holder. Through such a fixing method, the stacked body 140 in which the plurality of fastening members 142 are stacked in one direction may be provided.

The holder 143a is cylindrical and may have a radius designed to generate a vortex 160 in the body 121 . Therefore, the diameter of the cradle (143a) may be the same as, smaller or larger than the graphite base material (12).

Since the graphite base material 12 is stacked in one direction, adjacent graphite base materials 12 may be disposed to face each other.

For example, as shown in FIG. 5 , when a plurality of fastening members ( 142 in FIG. 6 ) stacked on the laminate 140 are disposed along the horizontal direction, the plurality of graphite base materials 12 are stacked along the horizontal direction. can be

[Second embodiment]

7A is a cross-sectional side view of the silicon carbide member manufacturing apparatus according to the second embodiment. 7B is a long-axis cross-sectional view showing an apparatus for manufacturing a silicon carbide member according to a second embodiment.

The second embodiment is similar to the first embodiment except for the plurality of rotating bodies 155 . Accordingly, in the second embodiment, components having the same shape, structure, and/or function as in the first embodiment are given the same reference numerals and detailed description is omitted. The description omitted below can be easily understood from the description of the first embodiment.

7A and 7B , the silicon carbide member manufacturing apparatus 100A according to the second exemplary embodiment may include a processing module 120 . The processing module 120 may perform a deposition process for manufacturing the silicon carbide member ( 10 of FIGS. 21 and 22 ).

The processing module 120 may include a body 121 , a gas supply unit 125 , a gas discharge unit 126 , a laminate 140 , and a plurality of rotation bodies 155 . The processing module 120 may include many more components.

For example, the plurality of rotating bodies 155 may be disposed along the circumference of the stacked body 140 . For example, the plurality of rotating bodies 155 may be disposed adjacent to the inner surface 121a of the main body 121 . That is, the plurality of rotating bodies 155 may be disposed closer to the inner surface 121a of the body 121 than the outer surface 140a of the stacked body 140 . For example, the plurality of rotating bodies 155 may be disposed along the circumference of the inner surface 121a of the main body 121 adjacent to the inner surface 121a of the main body 121 .

Each of the plurality of rotating bodies 155 may have a cylindrical shape. Each of the plurality of rotating bodies 155 may have a long axis parallel to the long axis of the stacked body 140 . That is, when the multilayer body 140 has a long axis along the horizontal direction as shown in FIG. 5 , the long axes of the plurality of rotation bodies 155 may be arranged along the horizontal direction.

For example, the distance between each of the plurality of rotating bodies 155 and the stacked body 140 may be the same, but is not limited thereto. For example, the diameter D2 of the plurality of rotating bodies 155 may be smaller than the diameter D1 of the stacked body 140 .

The plurality of rotating bodies 155 may be rotated simultaneously with the rotation of the stacked body 140 or may be rotated after the stacked body 140 is rotated.

The plurality of rotating bodies 155 may generate a vortex more easily.

As the stacked body 140 rotates, the deposition gases adjacent to the outer surface 140a of the stacked body 140 are rotated and may be gradually bounced off toward the body 121 . Accordingly, the deposition gases may increase around the inner surface 121a of the body 121 rather than around the outer surface 140a of the stack 140 . In this situation, by rotating the plurality of rotating bodies 155 , the deposition gases positioned around the inner surface 121a of the main body 121 may be rotated along the circumference of each of the plurality of rotating bodies 155 . Accordingly, since the deposition gases are rotated not only by the stacked body 140 but also by the plurality of rotating bodies 155 , a vortex by the deposition gas may be easily generated.

In addition, the deposition gases around the stacked body 140 are spread toward the inner surface 121a of the main body 121 by the stacked body 140 , and the plurality of rotary bodies 155 by the plurality of rotary bodies 155 . As the surrounding deposition gases are spread toward the stacked body 140 , the deposition gases are evenly spread over the entire area of the body 121 , so that the deposition gases can be more easily and quickly mixed.

Accordingly, the plurality of rotating bodies 155 may serve to more easily generate a vortex and to allow the deposition gases to be mixed more quickly.

Even if the rotation speed of the stacked body 140 of the second embodiment is further reduced than the rotation speed of the stacked body 140 of the first embodiment, a vortex by the deposition gas may be generated by the rotation of the plurality of rotary bodies 155 . . Therefore, by reducing the rotation speed of the stacked body 140, the plurality of graphite base materials 12 stacked on the stacked body 140 are prevented from being separated from the stacked body 140 according to the rotation of the stacked body 140. Not only that, the rotation speed of the plurality of graphite base materials 12 is also reduced due to the decrease in the rotation speed of the stacked body 140, so that the silicon carbide layer (13 in FIG. 22) can be easily deposited on the graphite surface.

Although six rotating bodies 155 are shown in the drawing, more or less than this in consideration of the size of the internal space of the body 121, the diameter of each rotating body 155, the spacing between each rotating body 155, etc. A rotating body 155 may be provided.

[Third embodiment]

8 is a perspective view showing an apparatus for manufacturing a silicon carbide member according to a third embodiment. 9 is a cross-sectional view of the silicon carbide member manufacturing apparatus according to the third embodiment as viewed from above. 10 is a cross-sectional view of the silicon carbide member manufacturing apparatus according to the third embodiment as viewed from the front, and shows a state in which a vortex is generated.

The third embodiment is similar to the first embodiment, except that the long axis of the stacked body 140 is disposed along the vertical direction, and some shapes are changed for disposition of the stacked body 140 . Accordingly, in the third embodiment, the same reference numerals are given to components having the same shape, structure and/or function as those of the first embodiment, and detailed descriptions are omitted. The description omitted below can be easily understood from the description of the first embodiment.

8 to 10 , the silicon carbide member manufacturing apparatus 100B according to the third exemplary embodiment may include a processing module 120 . The processing module 120 may perform a deposition process for manufacturing the silicon carbide member ( 10 of FIGS. 21 and 22 ).

The processing module 120 may include a body 121 , a gas supply unit 125 , a gas discharge unit 126 , and a lamination material 140 . The processing module 120 may include many more components.

The body 121 may have an empty space having a cylindrical shape. That is, a circular space may be formed by the inner surface 121a of the body 121 . For example, the body 121 may have a cylindrical space along a vertical direction. That is, when viewed from above, the space in the body 121 may have a circular shape.

The outer surface 140a of the body 121 may have a hexahedral shape, but is not limited thereto. The fact that the outer surface 140a of the main body 121 has a hexahedral shape takes into account that the heating module 110 and the cooling module 130 shown in FIG. 17 are fastened to each of the front and rear ends of the main body 121 . If the main body 121 is provided alone without coupling the heating module 110 and the cooling module 130, the outer surface 140a of the main body 121 may have a shape other than a hexahedral shape.

The first opening/closing opening 122 may be installed in a first region of the body 121 , and the second opening/closing opening 123 may be installed in a second region of the main body 121 . In this case, the laminate 140 may be loaded into the body 121 through the first opening 122 and unloaded to the outside through the second opening 123 as shown in FIG. 11 .

For example, the first opening 122 and the second opening 123 may have a rectangular shape in which a vertical length H is longer than a horizontal length L. This is considering that the stacked body 140 enters and exits the first opening 122 and the second opening 123 in an upright state along the vertical direction. A vertical length H of each of the first opening 122 and the second opening 123 may be greater than the stacking height of the laminate 140 . The stacking height of the stacked body 140 may be a stacked height of a plurality of fastening members ( 142 of FIG. 6 ) included in the stacked body 140 .

Unlike the first embodiment ( FIGS. 2 and 3 ), in the second embodiment, the stacked body 140 may enter and exit the body 121 while standing in a vertical direction. In addition, the deposition process may be performed in the body 121 in a state in which the stacked body 140 stands upright. In this case, the center of the stacked body 140 may coincide with the center of the cylindrical space formed in the body 121 , but the present invention is not limited thereto.

At least one side of the stacked body 140 loaded in the body 121 may be fixed or caught in a corresponding area of the body 121 . For example, the lower side of the stacked body 140 standing in the vertical direction is connected to the rotation shaft of the motor, and the support part 141 is rotated by the motor to rotate the plurality of graphite base materials 12 provided in the stacked body 140 . can be As described above, the vortex 160 by the deposition gases may be generated by the rotation of the stacked body 140 .

Although not described above, a separate support member is provided on the lower side of the stacked body 140 to be easily connected to the motor, and the support member may be connected to the motor.

When the stacked body 140 is disposed in the center of the body 121 in an upright state along the vertical direction, as shown in FIG. 10 , the outer surface 140a of the stacked body 140 is the body 121 . It may be spaced apart from the inner surface 121a. The stacked body 140 may be formed in a cylindrical shape having a predetermined radius. Specifically, each of the plurality of fastening members 142 constituting the stacked body 140 may be formed in a cylindrical shape having a predetermined radius. Accordingly, the outer surface 140a of each of the plurality of fastening members 142 of the stacked body 140 may be spaced apart from the inner surface 121a of the body 121 .

The rotation axis of the stacked body 140 may be disposed along a vertical direction. As the deposition gases are supplied into the body 121 and the stacked body 140 is rotated, the deposition gases around the stacked body 140 may be rotated in a lateral direction along the circumference of the stacked body 140 . The deposition gases rotated along the circumference of the stacked body 140 are bounced out toward the body 121 by centrifugal force and Coriolis force, and the deposition gases that are bent out in this way are present adjacent to the inner surface 121a of the body 121 . By colliding with the deposition gas and rotating along the rotational direction of the laminate 140 , a vortex 160 along the axial direction of the laminate 140 between the inner surface 121a of the body 121 and the laminate 140 . may occur.

According to the third embodiment, even in a state in which the stacked body 140 stands in a vertical direction, a vortex 160 is generated in the body 121 to mix the deposition gases more quickly and easily, thereby shortening the deposition process time. can

According to the third embodiment, a silicon carbide layer (13 in FIG. 22) having a uniform thickness and excellent film quality by maintaining a uniform gas density in the entire area within the body 121 by the vortex current 160 in the body 121 A silicon carbide member (10 in FIGS. 21 and 22) having

[Fourth embodiment]

12A is a cross-sectional view of the silicon carbide member manufacturing apparatus according to the fourth embodiment as viewed from above. 12B is a cross-sectional view of the silicon carbide member manufacturing apparatus according to the fourth embodiment as viewed from the front.

The fourth embodiment is similar to the third embodiment except for the plurality of rotating bodies 155 . Accordingly, in the fourth embodiment, components having the same shape, structure, and/or function as in the third embodiment are given the same reference numerals and detailed description is omitted. The description omitted below can be easily understood from the description of the third embodiment.

In addition, since the shape, structure and/or function of the plurality of rotation bodies 155 are the same as those of the plurality of rotation bodies 155 of the second embodiment, a detailed description thereof will be omitted. The description omitted below can be easily understood from the description of the second embodiment.

12A and 12B , the silicon carbide member manufacturing apparatus 100C according to the fourth exemplary embodiment may include a processing module 120 . The processing module 120 may perform a deposition process for manufacturing the silicon carbide member ( 10 of FIGS. 21 and 22 ).

The processing module 120 may include a body 121 , a gas supply unit 125 , a gas discharge unit 126 , a laminate 140 , and a plurality of rotation bodies 155 . The processing module 120 may include many more components.

For example, the plurality of rotating bodies 155 may be disposed along the circumference of the inner surface 121a of the main body 121 adjacent to the inner surface 121a of the main body 121 .

Each of the plurality of rotating bodies 155 may have a cylindrical shape. Each of the plurality of rotating bodies 155 may have a long axis parallel to the long axis of the stacked body 140 . That is, when the multilayer body 140 has a long axis along the vertical direction as shown in FIG. 11 , the long axes of the plurality of rotating bodies 155 may be disposed along the vertical direction.

For example, the distance between each of the plurality of rotating bodies 155 and the stacked body 140 may be the same, but is not limited thereto. For example, the diameter D2 of the plurality of rotating bodies 155 may be smaller than the diameter D1 of the stacked body 140 .

The plurality of rotating bodies 155 may be rotated simultaneously with the rotation of the stacked body 140 or may be rotated after the stacked body 140 is rotated.

The plurality of rotating bodies 155 may generate a vortex more easily. As the stacked body 140 rotates, the deposition gases adjacent to the outer surface 140a of the stacked body 140 may be rotated and gradually spit toward the body 121 . Accordingly, the deposition gases may increase around the inner surface 121a of the body 121 rather than around the outer surface 140a of the stack 140 .

In this situation, by rotating the plurality of rotating bodies 155 , the deposition gases positioned around the inner surface 121a of the main body 121 may be rotated along the circumference of each of the plurality of rotating bodies 155 . Accordingly, since the deposition gases are rotated not only by the stacked body 140 but also by the plurality of rotating bodies 155 , a vortex by the deposition gas may be easily generated.

In addition, the deposition gases around the stacked body 140 are spread toward the inner surface 121a of the main body 121 by the stacked body 140 , and the plurality of rotary bodies 155 by the plurality of rotary bodies 155 . As the surrounding deposition gases are spread toward the stacked body 140 , the deposition gases are evenly spread over the entire area of the body 121 , so that the deposition gases can be more easily and quickly mixed.

Accordingly, the plurality of rotating bodies 155 may serve to more easily generate a vortex and to allow the deposition gases to be mixed more quickly.

Even if the rotation speed of the stacked body 140 of the fourth embodiment is further reduced than the rotation speed of the stacked body 140 of the third embodiment, a vortex by the deposition gas may be generated by the rotation of the plurality of rotary bodies 155 . .

Therefore, by reducing the rotation speed of the stacked body 140, the plurality of graphite base materials 12 stacked on the stacked body 140 are prevented from being separated from the stacked body 140 according to the rotation of the stacked body 140. Not only that, the rotation speed of the plurality of graphite base materials 12 is also reduced due to the decrease in the rotation speed of the stacked body 140, so that the silicon carbide layer (13 in FIG. 22) can be easily deposited on the graphite surface.

Although six rotating bodies 155 are shown in the drawing, more or less than this in consideration of the size of the internal space of the body 121, the diameter of each rotating body 155, the spacing between each rotating body 155, etc. A rotating body 155 may be provided.

[Example 5]

13 is an enlarged view showing a laminate of the silicon carbide member manufacturing apparatus according to the fifth embodiment.

Except for the laminate 140 in the fifth embodiment, it is the same as the first to fourth embodiments. Accordingly, in the fifth embodiment, components having the same shape, structure and/or function as those of the first to fourth embodiments are given the same reference numerals and detailed descriptions thereof are omitted. The description omitted below can be easily understood from the description of the first to fourth embodiments.

Referring to FIG. 13 , an apparatus 100D for manufacturing a silicon carbide member according to the fifth embodiment may include a processing module ( 120 of FIGS. 2 , 7A , 8 , and 12A ). The processing module 120 may perform a deposition process for manufacturing the silicon carbide member ( 10 of FIGS. 21 and 22 ).

The processing module 120 may include a body 121 , a gas supply unit 125 , a gas discharge unit 126 , and a lamination material 140 . In addition, the processing module 120 may include a plurality of rotating bodies 155 as shown in FIGS. 7A and 12A . The processing module 120 may include many more components.

The stacked body 140 may have a structure in which a plurality of fastening members 142 are fastened to each other and stacked in one direction.

The stacked body illustrated in FIG. 13 shows a state in which three fastening members 142 are fastened among a plurality of fastening members.

13 , the fastening member 142 may include a cradle 143a and a fastening protrusion 143b. The cradles 143a are fastened to each other through the fastening protrusion 143b to complete the stacked body 140 . The graphite base material 12 may be fixed on these cradles 143a. In this way, after the plurality of graphite base materials 12 are mounted on the plurality of holders 143a, respectively, these cradles 143a are fastened to each other via the fastening protrusions 143b to complete the stacked body 140 .

For example, as shown in FIG. 5 , the laminate 140 is loaded into the body 121 through the first opening 122 in a state lying down in the horizontal direction, and the deposition process is performed in the body 121 , As shown in FIGS. 21 and 22 , the silicon carbide member 10 may be manufactured by depositing a silicon carbide layer 13 on the surfaces of the plurality of graphite base materials 12 .

Before loading, the laminate 140 in which the plurality of graphite base materials 12 are laminated may be transformed into the laminate 140 in which the plurality of silicon carbide members 10 are laminated by a deposition process in the body 121 . The stacked body 140 in which the plurality of silicon carbide members 10 are stacked may be unloaded through the second opening 123 .

As another example, as shown in FIG. 11 , the laminate 140 is loaded into the body 121 through the first opening 122 in an upright state along the vertical direction, and the deposition process is performed in the body 121 . The silicon carbide member 10 may be manufactured by being deposited as a silicon carbide layer 13 on the surfaces of the plurality of graphite base materials 12 .

Before loading, the laminate 140 in which the plurality of graphite base materials 12 are laminated may be transformed into the laminate 140 in which the plurality of silicon carbide members 10 are laminated by a deposition process in the body 121 . The stacked body 140 in which the plurality of silicon carbide members 10 are stacked may be unloaded through the second opening 123 .

Meanwhile, the outer surface 140a of the laminate 140 may include irregularities 149 . Specifically, the outer surface 140a of each holder 143a of the plurality of fastening members 142 constituting the stacked body 140 may have irregularities 149 . The unevenness 149 may have a constant pattern or a random pattern.

The unevenness 149 may have various shapes. For example, the unevenness 149 may have a dot shape, a stripe shape, a lattice shape, or the like.

Although the figure shows the unevenness 149 as having an engraved pattern, it may have an embossed pattern.

According to the fifth embodiment, since the unevenness 149 is formed on the outer surface 140a of the stacked body 140 , the deposition gases are diffusely reflected by the unevenness 149 and spread toward the body 121 more easily. have. That is, as the stacked body 140 is rotated, deposition gases near the stacked body 140 are rotated along the circumference of the stacked body 140 , and some of the rotated deposition gases are formed on the outer surface ( It is diffusely reflected by the irregularities 149 formed in 140a), so that it can bounce toward the body 121 more quickly than other deposition gases.

Accordingly, the deposition gases are more rapidly collected on the inner surface 121a of the body 121 , so that a vortex can be generated more quickly in the body 121 . Accordingly, deposition gases can be mixed more quickly and a uniform gas density can be obtained more quickly, so that the deposition process time can be more remarkably shortened.

[Sixth embodiment]

14 is a cross-sectional view of the silicon carbide member manufacturing apparatus according to the sixth embodiment as viewed from the front.

Except for the main body 121 in the sixth embodiment, it is the same as the first to fourth embodiments. Accordingly, in the sixth embodiment, components having the same shape, structure and/or function as those of the first to fourth embodiments are given the same reference numerals and detailed descriptions thereof are omitted. The description omitted below can be easily understood from the description of the first to fourth embodiments.

Referring to FIG. 14 , the apparatus 100E for manufacturing a silicon carbide member according to the sixth embodiment may include a processing module 120 . The processing module 120 may perform a deposition process for manufacturing the silicon carbide member ( 10 of FIGS. 21 and 22 ).

The processing module 120 may include a body 121 , a gas supply unit 125 , a gas discharge unit 126 , and a lamination material 140 . In addition, the processing module 120 may include a plurality of rotating bodies 155 as shown in FIGS. 7A and 12A . The processing module 120 may include many more components.

The body 121 may have a cylindrical space. That is, a circular space may be formed by the inner surface 121a of the body 121 .

For example, the body 121 may have a cylindrical space in a horizontal direction as shown in FIG. 2 or a cylindrical space in a vertical direction as shown in FIG. 8 . For example, when the main body 121 has a cylindrical space in a horizontal direction, the stacked body 140 may be disposed in the cylindrical space in a state lying in a horizontal direction.

For example, when the body 121 has a cylindrical space in a vertical direction, the stacked body 140 may be disposed in the cylindrical space in an upright state along the vertical direction.

Meanwhile, the inner surface 121a of the body 121 may include irregularities 128 . The unevenness 128 may have a constant pattern or a random pattern.

The unevenness 128 may have various shapes. For example, the unevenness 128 may have a dot shape, a stripe shape, a lattice shape, or the like.

Although the figure shows the unevenness 128 as having an engraved pattern, it may have an embossed pattern.

According to the sixth embodiment, since the unevenness 128 is formed on the outer surface 140a of the stacked body 140 , the deposition gases are diffusely reflected by the unevenness 128 and spread toward the body 121 more easily. have. That is, as the stacked body 140 is rotated, deposition gases near the stacked body 140 may be rotated along the circumference of the stacked body 140 and then bounce off toward the body 121 .

In this way, the bounced deposition gases are diffusely reflected by the irregularities 128 formed on the inner surface 121a of the body 121 and spread toward the periphery or the stacked body 140, so that a vortex is generated in the body 121 more quickly. can Accordingly, deposition gases can be mixed more quickly and a uniform gas density can be obtained more quickly, so that the deposition process time can be more remarkably shortened.

Although not shown, the unevenness 149 formed on the outer surface 140a of the laminate 140 according to the fifth embodiment ( FIG. 13 ) and the inner surface 121a of the body 121 according to the sixth embodiment ( FIG. 14 ) ) may be simultaneously employed in the silicon carbide member manufacturing apparatus.

[Seventh embodiment]

Fig. 15 is a cross-sectional side view of the silicon carbide member manufacturing apparatus according to the seventh embodiment.

The seventh embodiment is the same as the first to sixth embodiments except for at least one or more first rotating bodies 150 . In the seventh embodiment, the same reference numerals are assigned to components having the same shape, structure and/or function as those of the first to sixth embodiments, and detailed descriptions thereof are omitted. The description omitted below can be easily understood from the description of the first to sixth embodiments.

In the first to sixth embodiments, a vortex may be generated by the rotation of the stacked body 140 . On the other hand, although the stacked body 140 may not be rotated in the seventh embodiment, the present invention is not limited thereto. However, at least one first rotating body 150 for generating a vortex may be provided, and a vortex may be generated by rotation of the at least one or more first rotating body 150 .

Referring to FIG. 15 , an apparatus 100F for manufacturing a silicon carbide member according to the seventh embodiment may include a processing module 120 . The processing module 120 may perform a deposition process for manufacturing the silicon carbide member ( 10 of FIGS. 21 and 22 ).

The processing module 120 may include a body 121 , a gas supply unit 125 , a gas discharge unit 126 , a laminate 140 , and at least one first rotating body 150 . The processing module 120 may include many more components.

Although three first rotating bodies 150 are shown in the drawing, there may be more or fewer than this.

For example, when three rotating bodies 150 are provided, the angle between these rotating bodies 150 may be 60 degrees. That is, the arrangement shape of the three rotating bodies 150 may have an equilateral triangle shape.

The diameter D3 of the first rotating body 150 may be smaller than the diameter D1 of the stacked body 140 . Although not shown, the diameter D3 of the first rotating body 150 may be larger than the diameter D1 of the stacked body 140 . The diameter D3 of the first rotating body 150 may be optimally designed to easily generate a vortex.

At least one first rotating body 150 may be disposed along the circumference of the stacked body 140 . At least one first rotating body 150 may be disposed adjacent to the stacked body 140 . That is, the at least one first rotating body 150 may be disposed closer to the outer surface 140a of the laminate 140 than the inner surface 121a of the main body 121 .

As the deposition gases are supplied into the body 121 and the at least one first rotating body 150 is rotated, the deposition gases may be rotated along the circumference of the at least one or more first rotating bodies 150 . Thereafter, the deposition gases rotated along the circumference of each of the first rotating bodies 150 may be bounced out toward the main body 121 by centrifugal force and Coriolis force.

In this way, the bouncing deposition gases and the deposition gases originally present on the inner surface 121a of the main body 121 collide with each other and rotate along the circumference of at least one first rotating body 150 , and then the deposition gases gradually An unstable movement may be generated to generate a vortex rotating along the axial direction of the first rotating body 150 between the inner surface 121a of the main body 121 and the at least one first rotating body 150 .

Therefore, according to the seventh embodiment, a vortex is generated in the main body 121 using at least one first rotating body 150, so that the deposition gases are mixed more quickly and easily and have a uniform thickness and excellent film quality. A silicon carbide layer (13 in Fig. 22) can be obtained.

Although not shown, the outer surface of the rotating body 150 may be formed with irregularities 149 as shown in FIG. 13 .

Although not shown, the inner surface of the main body 121 may be formed with irregularities 128 as shown in FIG. 14 .

[Eighth embodiment]

Fig. 16 is a cross-sectional side view of the silicon carbide member manufacturing apparatus according to the eighth embodiment.

The eighth embodiment is the same as the seventh embodiment except for the plurality of second rotating bodies 155 . In addition, the plurality of second rotating bodies 155 of the eighth embodiment may have the same shape, structure and/or function as the rotating bodies 155 described in the second and fourth embodiments. Accordingly, in the eighth embodiment, components having the same shape, structure, and/or function as in any one of the first to seventh embodiments are assigned the same reference numerals and detailed description is omitted. The description omitted below can be easily understood from the description of the first to seventh embodiments.

Referring to FIG. 16 , the silicon carbide member manufacturing apparatus 100G according to the eighth embodiment may include a processing module 120 . The processing module 120 may perform a deposition process for manufacturing the silicon carbide member ( 10 of FIGS. 21 and 22 ).

The processing module 120 includes a main body 121 , a gas supply unit 125 , a gas discharge unit 126 , a laminate 140 , at least one first rotating body 150 , and a plurality of second rotating bodies 155 . may include. The processing module 120 may include many more components.

The stacked body 140 may be disposed in the center of the main body. For example, at least one first rotating body 150 may be disposed along the periphery of the stacked body 140 adjacent to the stacked body (140). That is, the at least one first rotating body 150 may be disposed closer to the outer surface 140a of the laminate 140 than the inner surface 121a of the main body 121 . For example, the plurality of second rotating bodies 155 may be disposed adjacent to the main body 121 . That is, the plurality of second rotation bodies 155 may be disposed closer to the inner surface 121a of the main body 121 than the outer surface 140a of the stacked body 140 .

For example, the number of the second rotating body 155 may be greater than the number of the first rotating body 150 . For example, the diameter D2 of the second rotating body 155 may be smaller than the diameter D3 of the first rotating body 150 .

When the stacked body 140 is disposed in the main body 121 in a state lying down in the horizontal direction as shown in FIG. 2 , the axial direction of each of the first rotating body 150 and the second rotating body 155 is horizontal. direction can be. That is, the axial direction of each of the first rotating body 150 and the second rotating body 155 may be the same as the long axis direction of the stacked body 140 .

As shown in FIG. 8 , when the stacked body 140 is disposed in the body 121 in an upright state along the vertical direction, the axial direction of the first rotating body 150 and the second rotating body 155 , respectively. may be in a vertical direction. That is, the axial direction of each of the first rotating body 150 and the second rotating body 155 may be the same as the long axis direction of the stacked body 140 .

The plurality of second rotation bodies 155 may more easily generate a vortex. For example, as the at least one first rotating body 150 rotates, the deposition gases adjacent to the outer surface of the first rotating body 150 may be rotated and gradually chimed toward the main body 121 .

Accordingly, the deposition gases may increase around the inner surface 121a of the main body 121 rather than around the outer surface of the first rotating body 150 . In this situation, by rotating the plurality of second rotating bodies 155 , the deposition gases positioned around the inner surface 121a of the main body 121 are rotated along the circumference of each of the plurality of second rotating bodies 155 . can Accordingly, since the deposition gases are rotated not only by the first rotation body 150 but also by the plurality of second rotation bodies 155 , a vortex by the deposition gas can be easily generated.

In addition, the deposition gases around the first rotating body 150 are spread toward the inner surface 121a of the main body 121 by the first rotating body 150 , and a plurality of the deposition gases are caused by the plurality of second rotating bodies 155 . By spreading the deposition gases around the second rotating body 155 of the first rotating body 150 toward the first rotating body 150, the deposition gases are evenly spread over the entire area of the body 121, so that the deposition gases can be mixed more easily and quickly. .

Accordingly, the plurality of second rotating bodies 155 may more easily generate a vortex and serve to more rapidly mix the deposition gases.

Even if the rotation speed of the first rotation body 150 of the eighth embodiment is further reduced than the rotation speed of the stacked body 140 of the first embodiment or the third embodiment, deposition by the rotation of the plurality of second rotation bodies 155 A vortex may be generated by the gas.

Therefore, by reducing the rotational speed of the first rotating body 150, the plurality of graphite base materials 12 stacked on the first rotating body 150 are formed according to the rotation of the first rotating body 150 according to the rotation of the first rotating body ( 150) not only can be prevented from being separated from the first rotating body 150, but also the rotational speed of the plurality of graphite base materials 12 is reduced due to the decrease in the rotational speed of the first rotating body 150, so that the silicon carbide layer on the graphite surface (13 in FIG. 22) This can be easily deposited.

[Ninth embodiment]

17 is a cross-sectional view showing an apparatus for manufacturing a silicon carbide member according to a ninth embodiment.

The ninth embodiment may adopt the technical features of any one of the first to eighth embodiments, and the main contents of the ninth embodiment will be described below.

Referring to FIG. 17 , an apparatus 100H for manufacturing a silicon carbide member according to the ninth embodiment may include a heating module 110 , a processing module 120 , and a cooling module 130 .

Since the processing module 120 has the same shape, configuration, and/or function as the processing module 120 of the first and second embodiments, a detailed description thereof will be omitted.

The heating module 110 may be coupled to the front end of the processing module 120 , and the cooling module 130 may be coupled to the rear end of the processing module 120 .

The heating module 110 may include a second body 111 , a third opening 112 , a fourth opening 113 , and at least one second heater 114 .

The size of the second body 111 may be the same as or smaller than the size of the first body 121 of the processing module 120 .

Each of the third opening 112 and the fourth opening 113 may be installed on a side surface of the heating module 110 . In this case, the fourth opening 113 of the heating module 110 may be installed to correspond to the first opening 122 of the processing module 120 . The first opening 122 of the processing module 120 and the fourth opening 113 of the heating module 110 may have the same size, but is not limited thereto.

The fourth opening 113 of the heating module 110 may be operated simultaneously with the first opening 122 of the processing module 120, but is not limited thereto. For example, the fourth opening 113 of the heating module 110 and the first opening 122 of the processing module 120 are simultaneously opened, so that at least one laminate 140 heated by the heating module 110 is heated It may be loaded into the processing module 120 through the fourth opening 113 of the module 110 and the first opening 122 of the processing module 120 .

Thereafter, the fourth opening 113 of the heating module 110 and the first opening 122 of the processing module 120 may be closed at the same time.

The second heater 114 may be installed on at least one area of the second body 111 . The second heater 114 may heat the plurality of graphite base materials 12 of each of the at least one or more laminates 140 to a first temperature. Although the second heater 114 is installed on both sides of the second body 111 in the drawing, it may be installed on the other side or upper side.

The cooling module 130 may include a third body 131 , a fifth opening 132 , a sixth opening 133 , and at least one cooler 134 .

The size of the third body 131 may be the same as or smaller than the size of the first body 121 of the processing module 120 .

Each of the fifth opening 132 and the sixth opening 133 may be installed on a side surface of the cooling module 130 . In this case, the fifth opening 132 of the cooling module 130 may be installed to correspond to the second opening 123 of the processing module 120 . The second opening 123 of the processing module 120 and the fifth opening 132 of the cooling module 130 may have the same size, but are not limited thereto.

The fifth opening 132 of the cooling module 130 may operate simultaneously with the second opening 123 of the processing module 120 , but the present invention is not limited thereto. For example, the second opening 123 of the processing module 120 and the fifth opening 132 of the cooling module 130 are simultaneously opened, so that the silicon carbide layer (13 in FIG. 22 ) ( 13 ) on the processing module 120 . The deposited at least one stack 140 may be unloaded into the cooling module 130 through the second opening 123 of the processing module 120 and the fifth opening 132 of the cooling module 130 . .

Thereafter, the second opening 123 of the processing module 120 and the fifth opening 132 of the cooling module 130 may be simultaneously closed.

The cooler 134 may be installed on at least one area of the third body 131 . The cooler 134 may cool the plurality of graphite base materials 12 of each of the at least one or more laminates 140 to the second temperature. Although the cooler 134 is installed on both sides of the third body 131 in the drawing, it may be installed on the other side or upper side.

For example, in the cooler 134 , a plurality of pipes may be installed across various regions of the third body 131 so that coolant flows through various regions of the third body 131 .

The third opening 112 and the fourth opening 113 of the heating module 110, the first opening 122 and the second opening 123 of the processing module 120, and the fifth opening of the cooling module 130 ( 132) and the sixth opening/closing opening 133 may be positioned on a horizontal straight line. Accordingly, the at least one or more stacked bodies 140 are formed by the third opening 112 and the fourth opening 113 of the heating module 110 , and the first opening 122 and the second opening 123 of the processing module 120 . ) and the fifth opening 132 and the sixth opening 133 of the cooling module 130 are moved in a horizontal straight line through each, it is possible to shorten the process time by minimizing the movement path.

Meanwhile, the heating module 110 may heat the plurality of graphite base materials 12 of each of the at least one or more stacked bodies 140 .

When the heating module 110 is not present, the stacked body 140 is directly loaded into the processing module 120, and then at least one or more stacked bodies 140 by the processing module 120. 12) must be heated. Typically, the processing temperature in the processing module 120 is approximately 1200°C to 1400°C, preferably 1300°C, but is not limited thereto.

In contrast, the outside of the processing module 120 may be at room temperature, that is, approximately 23°C. Therefore, a very long time is required to heat the plurality of graphite base materials 12 of each of the at least one or more stacked bodies 140 loaded in the processing module 120 to raise the process temperature from room temperature, which is a delay in the deposition process. may cause

In addition, when a plurality of graphite base material 12 is rapidly heated, there is a problem that the crystal quality of the plurality of graphite base material 12 may be deteriorated due to thermal expansion.

In the ninth embodiment, at least one stacked body 140 may be primarily heated in the heating module 110 before being loaded into the processing module 120 . For example, the heating module 110 may heat the plurality of graphite base materials 12 of each of the at least one or more stacked bodies 140 to increase the temperature from room temperature to the first temperature.

To this end, the heating module 110 may be continuously heated so that the temperature of the inner space is maintained at the first temperature. For example, the first temperature is between room temperature and the process temperature of the processing module 120 , and may be 800°C to 1100°C, preferably 1000°C, but is not limited thereto.

In this way, the plurality of graphite base materials 12 of each of the at least one or more stacked bodies 140 in the heating module 110 may be heated to a first temperature and then loaded into the processing module 120 . The processing module 120 may secondarily heat the plurality of graphite base materials 12 already having the first temperature to raise the temperature to the process temperature.

1300℃로 가열해야 하는데 반해, 히팅 모듈(110)이 구비된 경우, 프로세이 모듈에서 1000℃

1300℃로 가열하므로, 프로세싱 모듈(120)에서의 가열 시간이 획기적으로 단축되어 결국 증착 공정이 줄어들 수 있다. Therefore, when the heating module 110 is not present, the processing module 120 is at 23 ° C.

On the other hand, if the heating module 110 is provided, it should be heated to 1300 ℃, 1000 ℃ in the process module

Since heating to 1300° C., the heating time in the processing module 120 is remarkably shortened, and consequently, the deposition process may be reduced.

In addition, since the plurality of graphite base materials 12 are not rapidly heated, rapid thermal expansion is prevented, so that the crystal quality of the plurality of graphite base materials 12 can be improved compared to conventional rapid heating.

Meanwhile, the cooling module 130 may cool the plurality of graphite base materials 12 of each of the at least one or more stacked bodies 140 .

When the cooling module 130 is not present, the plurality of graphite base materials 12 of each of the at least one or more stacked bodies 140 must be cooled in the processing module 120 . That is, the processing module 120 may cool the plurality of graphite base materials 12 of each of the at least one or more stacked bodies 140 from the process temperature to the second temperature.

In this case, since the heating module 110, which has already been raised to the process temperature, needs to be cooled again, a very long time is required to cool the plurality of graphite base materials 12 of each of the at least one or more laminates 140 in the cooling module 130 and this may lead to a delay in the deposition process.

Also, the crystal quality of the laminate 140 may be deteriorated by the conventional rapid cooling.

In the ninth embodiment, after the at least one or more stacked bodies 140 are unloaded from the processing module 120 to the cooling module 130 , the plurality of at least one or more stacked bodies 140 are directly loaded from the cooling module 130 , respectively. By cooling the graphite base material 12, the process temperature may be lowered to the second temperature. To this end, the cooling module 130 may be continuously cooled so that the temperature of the internal space is maintained at the second temperature.

Since the at least one or more stacks 140 are unloaded from the processing module 120 to the cooling module 130 which is maintained at the second temperature, the plurality of the at least one or more stacks 140 in each of the cooling modules 130 The graphite base material 12 is cooled with a curved bar so that it can be easily lowered from the process temperature to the second temperature.

For example, the second temperature is between room temperature and the process temperature of the processing module 120 , and may be 800°C to 1100°C, preferably 1000°C, but is not limited thereto. For example, the second temperature may be the same as the first temperature, but is not limited thereto.

In addition, according to the embodiment, as a gentle cooling process is performed by the cooling module 130 , the crystal quality of the laminate 140 may be improved.

According to the ninth embodiment, the heating module 110 is provided at the front end of the processing module 120 , so that the deposition process in the processing module 120 can be significantly shortened, and the cooling module 120 is cooled at the rear end of the processing module 120 . The module 130 may be provided to efficiently cool the plurality of graphite base materials 12 of each of the at least one or more stacked bodies 140 unloaded from the processing module 120 to be input to a subsequent process.

Accordingly, according to the ninth embodiment, as the heating module 110 is installed at the front end of the processing module 120 and the cooling module 130 is installed at the rear end of the processing module 120, it is loaded into the processing module 120. Since the plurality of graphite base materials 12 stacked on the laminate 140 before are heated by the heating module 110 , it is possible to efficiently raise the graphite base material 12 to the process temperature in the processing module 120 .

In addition, according to the ninth embodiment, since the plurality of silicon carbide members (10 in FIGS. 21 and 22 ) stacked on the laminate 140 after being unloaded from the processing module 120 are cooled in the cooling module 130 , It is easy to lower the silicon carbide member 10 to room temperature. Therefore, through heating before loading and cooling after unloading of the processing module 120 , the overall process time can be significantly shortened, and there is a technical effect that can improve the crystal quality of the silicon carbide laminate 140 .

[Method for manufacturing silicon carbide member]

18 shows a method for manufacturing a silicon carbide member according to an embodiment.

1 to 18 , the method for manufacturing a silicon carbide member according to the embodiment may largely include a heating step S10 , a deposition step S20 , and a cooling step S30 .

The heating step ( S10 ) is a step performed in the heating module 110 , and the plurality of graphite base materials 12 of each of the at least one or more laminates 140 may be heated to increase from room temperature to a first temperature.

The deposition step ( S20 ) is a step performed in the processing module 120 , and a silicon carbide layer 13 on a plurality of graphite base materials 12 of each of at least one or more stacked bodies 140 loaded in the heating module 110 . is formed, and the silicon carbide member 10 as shown in FIGS. 21 and 22 can be manufactured. That is, the silicon carbide member 10 may include a graphite base material 12 and a silicon carbide layer 13 deposited on the surface of the graphite base material 12 .

Next, the deposition step ( S20 ) will be described in detail with reference to FIG. 19 .

At least one stacked body 140 raised to a first temperature in the heating step may be loaded into the processing module 120 ( S21 ).

The processing module 120 may heat the plurality of graphite base materials 12 of each of the at least one or more stacked bodies 140 to increase to a process temperature before performing the deposition process (S22). Since the plurality of graphite base materials 12 are already raised to the first temperature in the heating module 110, the processing module 120 heats each of the plurality of graphite base materials 12 from the first temperature to the process temperature. have.

The processing module 120 may perform a deposition process when each of the plurality of graphite base materials 12 reaches a process temperature.

Specifically, deposition gases may be supplied into the first body 121 through the gas supply unit 125 ( S23 ). Subsequently, as the stacked body 140 , the first rotating body 150 , and/or the second rotating body 155 are rotated, a vortex by the deposition gas may be generated in the first body 121 ( S24 ). Due to the vortex generation, deposition gases may be mixed more quickly and easily, and the gas density may be uniform. A silicon carbide layer 13 is deposited on the surface of each of the plurality of graphite base materials 12 stacked on the laminate 140 by using the mixed deposition gases (S25), and the graphite base material 12 and silicon carbide are deposited as described above. A carbon silicon member consisting of the layer 13 can be produced.

When the plurality of silicon carbide members 10 are manufactured, the processing module 120 may unload at least one stack 140 on which the silicon carbide members 10 are stacked to the cooling module 130 ( S26 ). ).

The cooling step ( S30 ) is a step performed by the cooling module 130 , and the plurality of graphite base materials 12 of each of the at least one or more stacked bodies 140 unloaded from the processing module 120 are processed by the processing module 120 . It may be cooled down from the process temperature to the second temperature.

[Method of manufacturing focus ring]

23 to 25 show a method of manufacturing a focus ring.

23 , at least one region of the silicon carbide member 10 may be cut. For example, it may be cut along the first cutting line 15a and the second cutting line 15b using a cutting means (not shown).

For example, each of the first cutting line 15a and the second cutting line 15b may be positioned along an inner edge and an outer edge of the silicon carbide member 10 . For example, the silicon carbide member 10 may be cut along the first cutting line 15a and the second cutting line 15b by using the first cutting means and the second cutting means, respectively. For example, after the silicon carbide member 10 is cut along the first cutting line 15a using one cutting means, the silicon carbide member 10 may be cut along the second cutting line 15b. The cutting order can be changed.

For example, each of the first cutting line 15a and the second cutting line 15b may be in contact with the inner surface and the outer surface of the graphite base material 12 of the silicon carbide member 10 . Accordingly, when the cutting is completed along the first cutting line 15a and the second cutting line 15b, the inner surface and the outer surface of the graphite base material 12 of the silicon carbide member 10 as shown in FIG. 24 . Each may be exposed to the outside. In addition, silicon carbide layers 13a and 13b may remain on each of the upper and lower surfaces of the graphite base material 12 .

The silicon carbide layers 13a and 13b may be the width W21 of the focus rings 17a and 17b in FIG. 25 .

The width W11 of the silicon carbide layers 13a and 13b that are cut along the first cutting line 15a and the second cutting line 15b and remain on the upper and lower surfaces of the graphite base material 12, respectively, is the focus ring 17a. , 17b) may be equal to or greater than the width W21.

For example, when the width W11 of the silicon carbide layers 13a and 13b is greater than the width W21 of the focus rings 17a and 17b, the inner and/or outer surfaces of the silicon carbide layers 13a and 13b are polished Thus, the widths of the silicon carbide layers 13a and 13b may be equal to the width W21 of the focus rings 17a and 17b.

The silicon carbide layers 13a and 13b are separated from the graphite base material 12 to manufacture two focus rings 17a and 17b as shown in FIG. 25 .

For example, the upper silicon carbide layer 13a may be separated from the upper surface of the graphite base material 12 by cutting in the transverse direction along the interface between the graphite base material 12 and the upper silicon carbide layer 13a. The lower silicon carbide layer 13b may be separated from the lower surface of the graphite base material 12 by cutting in the transverse direction along the interface between the graphite base material 12 and the lower silicon carbide layer 13b.

As another example, the graphite base material 12 may be removed using an etching process or the like to obtain an upper silicon carbide layer 13a and a lower silicon carbide layer 13b.

As another example, the graphite base material 12 is cut along the horizontal direction so that the center of the thickness of the graphite base material 12 is cut, and a first part of the upper portion of the graphite base material 12 and the upper silicon carbide layer 13a are formed. A second member composed of the member and the lower portion of the graphite base material 12 and the lower silicon carbide layer 13b may be obtained.

Then, the upper part of the graphite base material 12 of the first member is removed to obtain the upper silicon carbide layer 13a, and the lower part of the graphite base material 12 of the second member is removed to remove the lower silicon carbide layer 13b. this can be obtained.

The upper silicon carbide layer 13a may be referred to as a first silicon carbide layer, and the lower silicon carbide layer 13b may be referred to as a second silicon carbide layer.

The upper silicon carbide layer 13a and the lower silicon carbide layer 13b thus obtained may be an upper focus ring 17a and a lower focus ring 17b, respectively, as shown in FIG. 25 .

For example, when the width W11 of the silicon carbide layers 13a and 13b is greater than the width W21 of the focus rings 17a and 17b, the inner and/or outer surfaces of the silicon carbide layers 13a and 13b are polished As a result, the widths of the silicon carbide layers 13a and 13b are reduced, so that the focus rings 17a and 17b having the width W21 can be manufactured. The upper focus ring 17a may be referred to as a first focus ring, and the lower focus ring 17b may be referred to as a second focus ring.

If necessary, the upper surface and/or lower surface of the first focus ring 17a may be polished, or the upper surface and/or lower surface of the second focus ring 17b may be polished.

[Semiconductor manufacturing equipment]

26 shows a semiconductor manufacturing apparatus according to an embodiment.

Referring to FIG. 26 , the semiconductor manufacturing apparatus 200 according to the embodiment may include an electrostatic chuck 201 , an upper electrode 202 , and a focus ring 17 .

In an embodiment, the semiconductor manufacturing apparatus 200 may be a deposition apparatus or an etching apparatus.

A first power may be applied to the electrostatic chuck 201 and a wafer W may be seated thereon. The upper electrode 202 may be disposed on the electrostatic chuck 201 , and a second power may be applied thereto.

A plasma region 210 may be formed between the electrostatic chuck 201 and the upper electrode 202 by a potential difference between the first power and the second power.

The focus ring 17 may be one of the focus rings 17a and 17b manufactured by FIGS. 23 to 25 . A highly reactive radical exists in the plasma region 210 , and these radicals react with a process gas to form a thin film on a wafer or a substrate, or a pattern may be formed on the thin film.

Ions or radicals in the plasma region 210 move toward the electrostatic chuck 201 , but when the focus ring 17 is not present, ions or radicals move toward the electrostatic chuck 201 , but may be moved horizontally. That is, ions or radicals spread out. Accordingly, the plasma density at the edge of the wafer or substrate on the electrostatic chuck 201 is lower than that of the center of the wafer or substrate, so that the thin film is not properly formed on the wafer or substrate or the film quality of the thin film is deteriorated. The line width is not formed.

In an embodiment, the focus ring 17 may be installed along the circumference of the electrostatic chuck 201 . For example, the focus ring 17 may be disposed along an outer circumference of the electrostatic chuck 201 . Although not shown, a groove is formed along the upper edge of the electrostatic chuck 201 , and the focus ring 17 may be mounted in the groove.

As described above, the focus ring 17 is installed along the periphery of the electrostatic chuck 201 to guide ions or radicals to move toward the electrostatic chuck 201 without spreading laterally by the focus ring 17 , thereby contributing to deposition. The film quality of the thin film can be improved, the accurate thickness of the thin film can be secured, and a pattern having a uniform line width of the thin film can be secured by etching.

The above detailed description should not be construed as restrictive in all respects and should be considered as illustrative. The scope of the embodiments should be determined by a reasonable interpretation of the appended claims, and all modifications within the equivalent scope of the embodiments are included in the scope of the embodiments.

10: silicon carbide member 12: graphite base material
13, 13a, 13b: silicon carbide layer 15a, 15b: cutting line
17, 17a, 17b: focus ring
100, 100A, 100B, 100C, 100D, 100E, 100F, 100G, 100H: Silicon carbide member manufacturing apparatus
110: heating module
111: second body 112: third opening
113: fourth opening 114: second heater
120: processing module 121: first body
121a: inner surface 122: first opening
123: second opening 124: first heater
125: gas supply 126: gas exhaust
128, 149: uneven 130: cooling module
131: third body 132: fifth opening and closing opening
133: sixth opening 134: cooler
140: laminate 140a: outer surface
142: fastening member 143a: cradle
143b: fastening protrusion 150, 155: rotating body
160: vortex 200: semiconductor manufacturing apparatus
201: electrostatic chuck 202: upper electrode
210: plasma region

Claims (20)

main body;
a gas supply unit installed on one side of the main body and supplying gas into the main body;
a gas discharge unit installed on the other side of the main body and discharging gas in the main body to the outside; and
It is disposed in the body and includes a laminate in which a plurality of base materials having a ring shape are respectively stacked,
The laminate is
The apparatus for manufacturing a silicon carbide member is rotated so as to generate a vortex by the gas along an axial direction of the laminate. According to claim 1,
An apparatus for manufacturing a silicon carbide member including a plurality of rotating bodies disposed along a circumference of the inner surface of the main body adjacent to the inner surface of the main body. 4. The method of claim 3,
An apparatus for manufacturing a silicon carbide member in which the diameter of the rotating body is smaller than the diameter of the laminate. 3. The method of claim 2,
An apparatus for manufacturing a silicon carbide member in which the axial direction of the laminate and the axial direction of the rotating body are horizontal. 3. The method of claim 2,
An apparatus for manufacturing a silicon carbide member in which an axial direction of the laminate and an axial direction of the rotating body are perpendicular to each other. According to claim 1,
An apparatus for manufacturing a silicon carbide member including irregularities on the outer surface of the laminate. According to claim 1,
An apparatus for manufacturing a silicon carbide member including an inner surface of the main body with irregularities. 8. A method for manufacturing a silicon carbide member comprising: producing a silicon carbide member by the device for producing a silicon carbide member according to any one of claims 1 to 7;
cutting at least one region of the manufactured silicon carbide member; and
Separating at least one silicon carbide layer (13a, 13b) from the base material; Method of manufacturing a focus ring comprising a. Loading a multilayer body in which a plurality of base materials having a ring shape are stacked, respectively, into the body;
injecting gas into the body and rotating the laminate to generate a vortex by the gas along an axial direction of the laminate;
manufacturing a plurality of silicon carbide members by using the gas flowing by the generated vortex to form a silicon carbide layer on each surface of the plurality of base materials of the laminate; and
A method of manufacturing a silicon carbide member comprising a; unloading the laminate in which the plurality of silicon carbide members manufactured, respectively, are stacked. 10. A method comprising: manufacturing a silicon carbide member by the method for manufacturing a silicon carbide member according to claim 9;
cutting at least one region of the manufactured silicon carbide member; and
Separating at least one or more silicon carbide layers from the base material; Method of manufacturing a focus ring comprising a. main body;
a gas supply unit installed on one side of the main body and supplying gas into the main body;
a gas discharge unit installed on the other side of the main body and discharging gas in the main body to the outside;
a laminate in which a plurality of base materials having a ring shape are stacked, respectively, disposed in the body; and
At least one first rotating body disposed in the main body,
The at least one first rotating body is disposed along the periphery of the outer surface of the laminate adjacent to the outer surface of the laminate,
The at least one first rotating body,
An apparatus for manufacturing a silicon carbide member rotated to generate a vortex by the gas along an axial direction of the first rotating body. 12. The method of claim 11,
The apparatus for manufacturing a silicon carbide member further comprising a plurality of second rotating bodies disposed along a circumference of the inner surface of the main body adjacent to the inner surface of the main body. 13. The method of claim 12,
The diameter of the second rotation body is smaller than the diameter of the first rotation body manufacturing apparatus of a silicon carbide member. 13. The method of claim 12,
The axial direction of the first rotating body and the axial direction of the second rotating body are horizontal directions. 13. The method of claim 12,
The axial direction of the first rotating body and the axial direction of the second rotating body are perpendicular to the manufacturing apparatus of the silicon carbide member. 12. The method of claim 11,
An apparatus for manufacturing a silicon carbide member including an outer surface of the first rotating body with irregularities. 12. The method of claim 11,
An apparatus for manufacturing a silicon carbide member including an inner surface of the main body with irregularities. 18. A method comprising: producing a silicon carbide member by the device for producing a silicon carbide member according to any one of claims 11 to 17;
cutting at least one region of the manufactured silicon carbide member; and
Separating at least one or more silicon carbide layers from the base material; Method of manufacturing a focus ring comprising a. heating the multilayer body in which a plurality of base materials are respectively stacked in a heating module coupled to the front end of the main body, which is a predetermined processing module, from room temperature to a first temperature;
loading the laminate of the plurality of base materials heated to the first temperature into the body;
injecting gas into the body and rotating the rotating body to generate a vortex by the gas along the axial direction of the rotating body; and
manufacturing a plurality of silicon carbide members by using the gas flowing by the generated vortex to form a silicon carbide layer on each surface of the plurality of base materials of the laminate;
unloading the laminate in which the plurality of silicon carbide members prepared above are stacked, respectively; and
After the unloading step, cooling the laminated body to lower the temperature of the laminated body to a third temperature in a cooling module coupled to the rear end of the main body; manufacturing a silicon carbide member by the method for manufacturing a silicon carbide member according to claim 19;
cutting at least one region of the manufactured silicon carbide member; and
Separating at least one or more silicon carbide layers from the base material; Method of manufacturing a focus ring comprising a.

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