JP6481363B2 - Film forming apparatus, film forming method, and storage medium - Google Patents

Description

  The present invention relates to a film forming apparatus, a film forming method, and a storage medium for obtaining a thin film by supplying a source gas to a substrate.

  As a technique for forming a thin film such as silicon oxide (SiO 2) on a substrate such as a semiconductor wafer (hereinafter referred to as “wafer”), for example, a film forming apparatus that performs ALD (Atomic Layer Deposition) is known. As this film forming apparatus, for example, a gas that alternately and repeatedly supplies a raw material gas that is a raw material of a silicon oxide film and an oxidizing gas that oxidizes this raw material gas to a wafer placed on a stage in a processing container It may be configured to include a supply unit. However, in such a film forming apparatus, it is required that the oxidizing gas is sufficiently purged and exhausted from the inside of the processing container before supplying the source gas and the source gas is sufficiently supplied before supplying the oxidizing gas. Therefore, a relatively long time is required for the film forming process.

  Therefore, there is a case where processing is performed by a film forming apparatus in which a rotary table is provided in a processing container whose inside is a vacuum atmosphere. In this film forming apparatus, a wafer is placed, for example, in a recess on the surface of the rotary table. On the turntable, a gas nozzle that discharges the source gas and a gas nozzle that discharges the oxidizing gas are arranged. Then, the rotation of the rotary table causes the wafer to revolve, and the wafer is alternately and repeatedly passed through the adsorption region to which the source gas is supplied and the oxidation region to which the oxidizing gas is supplied, thereby forming the silicon oxide film. In such a film forming apparatus, the atmosphere around the wafer is quickly switched. Patent Document 1 describes a film forming apparatus in which a wafer revolves in this way.

  In the film forming apparatus in which the wafer revolves, since the position where the wafer is placed is away from the rotation axis of the rotary table, the area on the peripheral side of the rotary table in the plane of the wafer is on the center side. Since the speed is higher than that in the region, the time in the source gas adsorption region is short, so the time in contact with the source gas is shortened. The position of the gas supply port of the gas nozzle that discharges the source gas is adjusted in order to suppress the decrease in the uniformity of the film thickness in the surface of the wafer caused by the above. There is a limit to improving the uniformity of the film thickness, and there is a need for an apparatus that can control the film thickness of each part of the wafer surface with higher accuracy. Also, in a film deposition system where the wafer revolves, particles are generated when the back surface of the wafer slides against the bottom surface of the recess due to the centrifugal force caused by the revolution, or when the side periphery of the wafer contacts the side wall of the recess. Therefore, there is a demand for an apparatus that does not have such a concern.

  Patent Document 2 includes a mounting table on which a wafer is mounted and rotates, a moving mechanism that moves the mounting table in a horizontal direction, a processing container having an exhaust port, and a plurality of gas nozzles that revolve in the processing container. A film forming apparatus for performing ALD is provided. The plurality of gas nozzles move so as to revolve while locally supplying a source gas and a nitriding gas for nitriding the source gas to the wafer, and the source gas and the nitriding gas react with each other on the wafer to form a film. Is called. However, the means for separating the source gas and the nitriding gas in the processing vessel is not disclosed, and there is a concern that the source gas flowing from the wafer to the exhaust port and the nitriding gas are mixed and particles are generated. is there.

JP 2010-135510 A JP 2010-229436

  The present invention has been made under such circumstances, and can provide a technique capable of performing a film forming process quickly and controlling the film thickness in each in-plane part of the substrate with high accuracy. is there.

The film forming apparatus of the present invention is a film forming apparatus that forms a thin film by alternately supplying a source gas for adsorbing to a substrate in a vacuum vessel and a reaction gas that reacts with the source gas.
A placement unit for placing the substrate provided in the vacuum vessel;
A source gas supply port for locally supplying source gas to the surface of the substrate, a region provided to surround the region to which the source gas is supplied, and a region to which the source gas is supplied and a region outside the region are provided. A source gas supply mechanism comprising a purge gas supply port and an exhaust port for forming an air flow for separation;
An atmosphere forming portion for forming an atmosphere of the reaction gas in the outer region;
A movement mechanism that moves the source gas supply mechanism relative to the mounting portion so that the reaction product layer is stacked on the entire surface of the substrate;
With
The source gas supply mechanism vertically penetrates the wall of the vacuum vessel, and the source gas supply port, the purge gas supply port, and the exhaust port are formed at one end thereof, and the other end is the vacuum vessel. Located outside the
The moving mechanism includes a rotation mechanism for a source gas supply mechanism for rotating the other end of the source gas supply mechanism,
Due to the rotation of the other end of the source gas supply mechanism, the source gas supply port, the purge gas supply port, and the exhaust port are opened so as to revolve and move on the substrate, and the exhaust port is the source gas. Surrounding the supply port, the purge gas supply port opens to surround the exhaust port,
The rotation radius of the other end of the source gas supply mechanism is smaller than the revolution radius of the purge gas supply port,
A first gap that surrounds the other end portion of the source gas supply mechanism and communicates with the source gas supply port, the purge gas supply port, and the exhaust port and is partitioned from the other end portion; A surrounding member forming a third gap,
A gas supply / exhaust mechanism for supplying the source gas to the first gap, supplying the purge gas to the second gap, and exhausting the third gap during rotation of the other end of the source gas supply mechanism And.

The film forming method of the present invention is a film forming method for forming a thin film by alternately supplying a source gas for adsorbing to a substrate in a vacuum vessel and a reaction gas that reacts with the source gas,
Placing the substrate on a placement portion provided in the vacuum vessel;
Supplying a source gas locally from the source gas supply port to the surface of the substrate;
Purging gas is supplied and exhausted from a purge gas supply port and an exhaust port provided so as to surround the region to which the source gas is supplied, and a region for supplying the source gas and a region outside the region are separated. Forming an air flow;
Forming an atmosphere of the reactive gas in the outer region by an atmosphere forming unit;
A moving mechanism that moves the source gas supply mechanism having the source gas supply port, the purge gas supply port, and the exhaust port with respect to the mounting portion so that the reaction product layer is stacked on the entire surface of the substrate. A moving process for relatively moving,
With
The source gas supply mechanism penetrates the wall of the vacuum vessel in the vertical direction, and a source gas supply port, a purge gas supply port and an exhaust port are formed at one end thereof, and the other end portion is formed outside the vacuum vessel. Position to,
The exhaust port surrounds the source gas supply port, the purge gas supply port opens to surround the exhaust port,
The moving step is a step of rotating the other end portion of the source gas supply mechanism with a rotation radius smaller than the revolution radius of the purge gas supply port by a rotation mechanism for the source gas supply mechanism constituting the movement mechanism ;
A first gap that surrounds the other end portion of the source gas supply mechanism and communicates with the source gas supply port, the purge gas supply port, and the exhaust port and is partitioned from the other end portion; And a surrounding member that forms a third gap,
By the gas supply / exhaust mechanism, during the rotation of the other end of the source gas supply mechanism, the supply of the source gas to the first gap, the supply of the purge gas to the second gap, and the exhaust of the third gap are performed. A process of performing;
It is characterized by providing.
The storage medium of the present invention is a storage medium storing a computer program used in the film forming apparatus,
The program includes steps for executing the film forming method.

  In the film forming apparatus of the present invention, a source gas supply port for locally supplying a source material to the surface of the substrate, a purge gas supply port and an exhaust port for forming an air flow separating a source gas supply region and an outer region thereof A source gas supply mechanism comprising: an atmosphere forming portion that forms an atmosphere of a reaction gas to form a reaction product layer by reacting with the source gas in an outer region; and a reaction product layer. A moving mechanism that moves the source gas supply mechanism relative to the mounting portion of the substrate so that the thin film is formed by being stacked. This eliminates the need to switch the atmosphere in the vacuum vessel between the source gas atmosphere and the reaction gas atmosphere that reacts with the source gas, thereby improving throughput. Further, according to this film forming apparatus, since it is not necessary to revolve the substrate during the film forming process, it is possible to improve the controllability of the film thickness distribution of each part within the surface of the substrate.

It is a vertical side view of the film-forming apparatus which concerns on the 1st Embodiment of this invention. It is a cross-sectional top view of the said film-forming apparatus. It is a perspective view which shows the holder mounting table and wafer holder provided in the said film-forming apparatus. It is a cross-sectional top view of the said film-forming apparatus. It is a vertical side view of the source gas supply part provided in the said film-forming apparatus. It is a lower surface side perspective view of the source gas supply part. It is a bottom view of the source gas supply unit. It is explanatory drawing which shows the delivery operation | movement of the wafer to the said film-forming apparatus. It is explanatory drawing which shows operation | movement of the said film-forming apparatus. It is a schematic diagram which shows the change of the wafer surface. It is a vertical side view of the film-forming apparatus which concerns on the 1st modification of 1st Embodiment. It is a vertical side view of the film-forming apparatus which concerns on the 2nd modification of 1st Embodiment. It is explanatory drawing which shows the delivery operation | movement of the wafer to the said film-forming apparatus. It is explanatory drawing which shows the delivery operation | movement of the wafer to the film-forming apparatus which concerns on the 3rd modification of 1st Embodiment. It is a bottom view of the holder holding part which comprises the said film-forming apparatus. It is a bottom view of another holder holding part. It is a top view which shows the positional relationship of the said holder holding part and the raising / lowering pin which comprises the film-forming apparatus. It is a vertical side view of the film-forming apparatus which concerns on 2nd Embodiment. It is a top view of the source gas supply part provided in the said film-forming apparatus. It is explanatory drawing which shows operation | movement of the said source gas supply part. It is explanatory drawing which shows operation | movement of another source gas supply part. It is a vertical side view of the film-forming apparatus which concerns on 3rd Embodiment. It is a bottom view which shows the other example of the gas supply head which comprises a raw material gas supply part.

(First embodiment)
A film forming apparatus 1 according to a first embodiment of the present invention, which performs ALD on a wafer W as a substrate to form a SiO ₂ (silicon oxide) film, will be described. The film forming apparatus 1 is configured to perform a film forming process on six wafers W in parallel. FIG. 1 is a longitudinal side view of the film forming apparatus 1, and FIG. 2 is a transverse plan view of the film forming apparatus 1. The film forming apparatus 1 includes a generally circular flat vacuum vessel 11, which is a lid 12 that forms a ceiling of the vacuum vessel 11, and a vessel that forms a side wall and a bottom of the vacuum vessel 11. And a main body 13. In the drawing, the processing space of the wafer W in the vacuum vessel 11 is shown as 10. In the figure, 14 is an O-ring that seals the gap between the lid 12 and the container body 13. In the figure, reference numeral 15 denotes a transfer port for the wafer W provided on the side wall, 16 in the figure denotes a shutter that can freely open and close the transfer port 15, and 17 in the figure denotes an O-ring that seals a gap between the shutter 16 and the side wall. It is.

  In the figure, 18 is an opening provided at the center of the bottom of the vacuum vessel 11, and a vertical rotating shaft 21 is inserted therethrough. In the figure, reference numeral 19 denotes a bearing for the rotating shaft 21, which also serves to seal the gap between the opening 18 and the rotating shaft 21. The lower end of the rotating shaft 21 is connected to a rotating mechanism 22 that rotates the rotating shaft 21 around the axis outside the vacuum vessel 11. The upper end of the rotating shaft 21 is connected to the center of the back surface of the horizontal disk-shaped holder mounting table 23, and the holder mounting table 23 can be rotated in the circumferential direction by the rotating mechanism 22. . The holder mounting table 23 rotates in this manner when the wafer W is transferred between the transfer mechanism (not shown in FIGS. 1 and 2) and a wafer holder 26 described later, and at a predetermined position when the wafer W is processed. Quiesce. FIG. 2 shows the holder mounting table 23 in such a stationary state.

  FIG. 3 is a perspective view of the holder mounting table 23. As shown in FIG. 3, the holder mounting table 23 has six circular recesses 24 formed at intervals in the circumferential direction, and the holder mounting table 23 is located at the center of the bottom of the recess 24. The through-hole which forms the front and back of this is provided. The outside of the through-hole, that is, the bottom of the recess 24 is configured as a ring plate-shaped holder mounting portion 25. A horizontal circular wafer holder 26 is provided in the recess 24 so as to be movable up and down in the recess 24. The wafer holder 26 includes a circular wafer mounting recess 27 at the center of the surface thereof. The wafer W is accommodated in the wafer placement recess 27 and placed horizontally on the bottom surface of the wafer placement recess 27. Three through holes 28 that penetrate the front and back of the wafer holder 26 are provided at the bottom of the wafer mounting recess 27. The through hole 28 is drilled at a position overlapping with the through hole of the holder mounting table 23, and an elevating pin 42 described later passes through the through hole 28 and protrudes on the bottom surface of the wafer mounting recess 27. The wafer W can be transferred between the wafer W transfer mechanism and the wafer holder 26.

  At the time of standby of the film forming apparatus 1 where processing is not performed on the wafer W, the peripheral edge of the back surface of the wafer holder 26 is placed on the holder placement portion 25 of the holder placement table 23. During the processing of the wafer W, the peripheral edge of the back surface of the wafer holder 26 is held by a holder holding unit 35 described later so as to be lifted from the holder mounting unit 25. In FIG. 1, the wafer holder 26 that has been lifted from the holder mounting portion 25 in this way is shown.

  The configuration of the container body 13 in the vacuum container 11 will be further described with reference to FIG. FIG. 4 shows a cross section of the film forming apparatus 1 at a height position different from that in FIG. Six through holes 32 are provided at the bottom of the container body 13 at intervals in the circumferential direction of the vacuum container 11 so as to penetrate the front and back surfaces thereof. The position of the through hole 32 corresponds to the position of the concave portion 24 of the holder mounting table 23 during the film forming process of the wafer W.

  A vertical rotation shaft 33 is inserted into each through hole 32, and the lower end of the rotation shaft 33 is supported by a drive unit 34 provided on the lower side of the container body 13. The drive unit 34 is provided so as to close the space between the through hole 32 and the rotary shaft 33, and can rotate the rotary shaft 33 around the axis and move it up and down. The upper end portion of the rotating shaft 33 is enlarged in diameter and configured as a horizontal circular holder holding portion 35. The holder holding unit 35 is positioned below the holder mounting table 23 as shown by a chain line in FIG. 1 during standby, and when processing the wafer W, the holder holding unit 35 of the holder mounting table 23 as shown by a solid line in FIG. It is located at a height that fits within the wafer mounting recess 27 and holds the center of the back surface of the wafer holder 26. As a result, the wafer holder 26 is lifted from the holder mounting portion 25 as described above, and can be further rotated in the circumferential direction of the wafer holder 26 via the rotation shaft 33. As a result, the wafer W can rotate around the center.

  In addition, four ring-shaped heaters 36 are provided outside the through-hole 32 on the bottom surface of the container body 13, and each heater 36 is configured concentrically around the center of the bottom surface of the container body 13. Yes. In FIG. 4, the heater 36 is shown with a large number of dots for easy understanding of the drawing. The wafer holder 26 is heated by radiant heat radiated upward from the heater 36 via a bottom cover 46 described later. The wafer W placed on the wafer holder 26 is heated by the heat transfer from the wafer holder 26. On the bottom surface of the container body 13, an exhaust port 37 is opened outside the heater 36. The exhaust port 37 is connected to an exhaust mechanism 39 configured by a valve, a vacuum pump, or the like via an exhaust pipe 38 and can exhaust the processing space 10 with an arbitrary exhaust amount.

  Three through holes 41 are provided at the bottom of the container body 13. As shown in FIG. 4, the three through holes 41 are provided on the outer side of one holder holding portion 35 in plan view along the circumference of the holder holding portion 35. The elevating pins 42 are vertically inserted into the through holes 41. Referring to FIG. 1, reference numeral 43 denotes a support plate that supports the base end of the lift pin 42, 44 denotes a lift mechanism that lifts the lift pin 42 via the support plate 43, and 45 denotes an outer cover. The outer cover 45 surrounds the through hole 41, the elevating pins 42, the support plate 43, the elevating mechanism 44, and the driving unit 34 to which the holder holding unit 35 is connected from the outside of the container main body 13, and the degree of vacuum in the vacuum container 11 is increased. secure. The support plate 43 is configured to be able to move up and down without interfering with the drive unit 34.

  Further, 46 in FIG. 1 is a bottom cover that covers substantially the entire bottom surface of the container body 13, and by covering the bottom surface in this way, ring-shaped regions 47 and 48 partitioned from each other are formed on the bottom surface. ing. The ring-shaped region 47 includes the heater 36 described above. The ring-shaped region 48 is formed outside the ring-shaped region 47 and is located on the exhaust port 37. An opening 49 communicating with the ring-shaped region 48 is provided on the surface of the bottom cover 46, and the atmosphere of the processing space 10 is exhausted from the exhaust port 37 through the opening 49. The reason why the ring-shaped regions 47 and 48 partitioned from each other in this way is to prevent the exhausted gas from contacting the heater 36 and deteriorating the heater 36. Further, the bottom cover 46 is provided with a through-hole through which the above-described lifting pins 42 pass and a through-hole through which the above-described rotating shaft 33 is inserted.

Next, the lid 12 of the vacuum container 11 will be described. The lid body 12 is provided with, for example, six gas shower heads 51 and six source gas supply units 6. When the wafer W is formed, as shown in FIG. One gas shower head 51 and one raw material gas supply unit 6 are located at the same position. A gas shower head 51 that forms an atmosphere is connected to a supply source 52 of ozone (O ₃ ) gas that is an oxidizing gas, and ozone gas that is a reaction gas stored in the gas supply source 52 is supplied to the gas shower head. It is supplied from the head 51 to the processing space 10.

  The raw material gas supply unit 6 will be described with reference to a longitudinal side view of FIG. 5 and a bottom perspective view of FIG. The source gas supply unit 6 includes a main body portion 61 and an outer cylinder portion 71. The main body portion 61 is provided so as to penetrate the lid body 12, and the upper side of the main body portion 61 is configured in a columnar shape extending vertically, and the lower side of the main body portion 61 is laterally below the lid body 12. The gas supply head 62 is configured to bend toward the head. Thus, the front end portion of the gas supply head 62 extending in the lateral direction is configured as a circular facing portion 63 protruding downward. The facing portion 63 is configured in a circular shape in plan view, and the lower surface thereof is configured as a facing surface that is close to and faces the surface of the wafer W held by the wafer holder 26.

  A source gas discharge port 64 that is a supply port for discharging a BTBAS (Bistal Butylaminosilane) gas that is a source gas containing Si (silicon) is opened at the center of the lower surface of the facing portion 63. Further, an exhaust port 65 that forms an air flow forming portion and a purge gas discharge port 66 that is a purge gas supply port are provided on the lower surface of the facing portion 63 so as to surround the source gas discharging port 64. The exhaust port 65 is located inside the purge gas discharge port 66. Further, the main body 61 is provided with gas flow paths 64A, 65A, 66A whose downstream ends are connected to the source gas discharge port 64, the exhaust port 65, and the purge gas discharge port 66, respectively. The upstream ends of 65 </ b> A and 66 </ b> A are respectively connected to grooves 64 </ b> B, 65 </ b> B, and 66 </ b> B formed on the outer surface of the main body 61 along the circumference of the main body 61. In addition, grooves 67 </ b> B and 68 </ b> B formed along the circumference of the main body 61 are provided on the outer surface of the main body 61. The grooves 65 </ b> B, 67 </ b> B, 64 </ b> B, 68 </ b> B, 66 </ b> B are formed in this order from the upper side to the lower side of the main body 61, and these grooves 64 </ b> B to 68 </ b> B are located above the lid 12.

  The outer cylinder part 71 surrounds the side periphery and the upper part of the main body part 61, and 72 in the figure is an O-ring that seals the gap between the lower end of the outer cylinder part 71 and the lid 12. A rotation mechanism 73 is fixed to the outer cylinder portion 71 above the outer cylinder portion 71, and the rotation mechanism 73 is connected to the main body portion 61 via a rotation shaft 74 that enters the inside of the outer cylinder portion 71. Thus, the main body 61 can be rotated around the vertical axis. The driving unit 34 that rotates the rotating mechanism 73 and the wafer holder 26 that forms the wafer W mounting portion has a moving mechanism that moves the gas supply head 62 that constitutes the source gas supply mechanism relative to the wafer W. Configure.

Further, grooves 67C, 68C, 66C are formed on the inner side surface of the outer cylinder portion 71 along the circumference of the outer cylinder portion 71 at the same height as the grooves 67B, 68B, 66B of the main body portion 61, respectively. The downstream ends of the gas supply pipes 67D, 68D, and 66D are connected so as to open to the grooves 67C, 68C, and 66C from the outside of the cylindrical portion 71. The upstream ends of the gas supply pipes 67D, 68D, 66D are connected to an N ₂ (nitrogen) gas supply source 75. Further, one end of the gas supply pipe 64D and the exhaust pipe 65D is connected to the outside of the outer cylinder portion 71 so as to open into the grooves 64B and 65B, respectively, and the other end of the exhaust pipe 65D and the gas supply pipe 64D is BTBAS. The gas supply source 76 and the exhaust mechanism 39 are respectively connected.

With the above configuration, the BTBAS gas stored in the BTBAS gas supply source 76 is supplied to the groove 64 </ b> B and discharged from the source gas discharge port 64. Further, N ₂ gas stored in the N ₂ gas supply source 75 is supplied to the groove 66B as the purge gas, is discharged from the purge gas discharge port 66. Further, the atmosphere between the facing portion 63 and the surface of the wafer W can be exhausted from the exhaust port 65 through the groove 65B.

  Between the outer cylinder part 71 and the main-body part 61, the bearing 77 and the sealing members 78A-78D are provided. The seal member 78A is disposed above the groove 65B, the seal member 78B is disposed between the grooves 65B and 67B, the seal member 78C is disposed between the grooves 68B and 66B, and the seal member 78D is disposed in the groove. It is arranged below 66B. With such a configuration, the groove 65B, the grooves 67B, 64B, 68B, and the groove 66B are partitioned from each other so that gases supplied to these grooves are not mixed with each other.

However, each groove is formed so that the N ₂ gas supplied from the grooves 67C and 68C of the outer cylinder part 71 to the grooves 67B and 68B flows into the groove 64B through the gap between the outer cylinder part 71 and the main body part 61. Has been. The N ₂ gas flowing into the groove 64B is discharged from the raw material gas discharge port 64 through the gas flow path 64A together with the BTBAS gas supplied to the groove 64B. Thus, the N ₂ gas supplied to the grooves 67B and 68B prevents the BTBAS gas from flowing through the gap between the outer cylinder portion 71 and the main body portion 61 toward the seal members 78B and 78C. Therefore, the BTBAS gas is prevented from coming into contact with these seal members 78B and 78C and becoming particles.

  FIG. 7 shows the gas shower head 51 and the gas supply head 62 as viewed from below. As described above, the gas supply head 62 can rotate, so that the source gas discharge port 64 can move between the central portion and the peripheral portion of the wafer W. When the wafer W is processed, the raw material gas can be supplied to the entire surface of the wafer W by rotating the wafer W in parallel with the rotation of the gas supply head 62. In the drawing, P1 and P2 indicate the rotation center of the gas supply head and the rotation center of the wafer W, respectively.

  The film forming apparatus 1 is provided with a control unit 100 including a computer for controlling the operation of the entire apparatus (see FIG. 1). The control unit 100 stores a program for executing a film forming process as will be described later. The program controls the operation of each unit by transmitting a control signal to each unit of the film forming apparatus 1. Specifically, the wafer 36 is heated by the heater 36, the holder mounting table 23 is rotated by the rotating mechanism 22, the lifting pins 42 are lifted / lowered by the lifting / lowering mechanism 44, the exhaust amount is adjusted by the exhaust mechanism 39, and the holder is driven by the drive unit 34. Operations such as raising and lowering and rotation of the holding unit 35 and supply / disconnection of gas from each gas supply source to the gas supply head 62 and the gas shower head 51 are controlled according to the control signal. In the above program, these controls are performed, and a group of steps is set so that each process described later is executed. The program is stored in a storage medium such as a hard disk, a compact disk, a magneto-optical disk, a memory card, or a flexible disk, and installed in the control unit 100 from the storage medium.

  The operation of the film forming apparatus 1 when the wafer W is transferred from the outside of the processing space 10 to the wafer holder 26 will be described with reference to FIG. The holder mounting table 23 is rotated in a state where the holder holding portion 35 is located below the holder mounting table 23 and each wafer holder 26 is mounted on the holder mounting portion 25 of the holder mounting table 23. Then, one of the wafer holders 26 moves to a predetermined position. Then, the transfer mechanism 29 holding the wafer W enters the processing space 10 from the outside, and the tip of the elevating pin 42 protrudes above the holder mounting table 23 through the through hole 28 of the wafer holder 26 to transfer the transfer mechanism 29. Then, the wafer W is delivered to the lift pins 42 (upper stage in FIG. 8).

  When the transfer mechanism 29 is withdrawn from the processing space 10, the lift pins 42 are lowered and the wafer W is placed in the wafer placement recesses 27 of the wafer holder 26, and the tips of the lift pins 42 are positioned on the holder placement table 23. It moves below the holder mounting table 23 so as not to prevent the rotation (middle of FIG. 8). Thereafter, the wafer W is sequentially transferred to the other wafer mounting recesses 27 by the rotation of the holder mounting table 23 and the lifting / lowering of the lift pins 42. When the wafer W is delivered to all the wafer mounting recesses 27, the holder holding unit 35 is raised while the rotation of the holder mounting table 23 is stopped to hold the center of the back surface of the wafer holder 26. Then, the wafer holder 26 is lifted from the holder mounting portion 25 (lower stage in FIG. 8).

Next, how the film forming process is performed on the surface of the wafer W placed on the wafer holder 26 as described above will be described with reference to FIGS. In FIG. 9, the gas flow in the processing space 10 is indicated by solid arrows. FIG. 10 schematically shows the state of the surface of the wafer W during the film forming process. First, each wafer holder 26 rotates and the wafer W rotates around its center. That is, when the movement of the wafer W by the holder mounting table 23 is regarded as revolution, each wafer W rotates so as to rotate. In parallel with the rotation of the wafer W, the temperature of the wafer W increases due to an increase in the output of the heater 36, the supply of O ₃ gas from each gas shower head 51 to the processing space 10, and the processing through the exhaust port 37. Each space 10 is exhausted.

Due to the rotation of the wafer W, each part of the wafer W passes over the heater 36 and the entire surface of the wafer W is heated to a predetermined temperature. In parallel, the O ₃ gas concentration in the processing space 10 becomes a predetermined concentration, and the processing space 10 becomes a vacuum atmosphere at a predetermined pressure. Thereafter, each gas supply head 62 is rotated, and BTBAS gas and N ₂ gas are supplied from the source gas discharge port 64 and the purge gas discharge port 66 of each gas supply head 62 to the space between the facing portion 63 and the wafer W. Each is discharged. In parallel with the discharge of these gases, exhaust is performed from the exhaust port 65 of each gas supply head 62. FIG. 9 shows the gas flow in the processing space 10 at this time.

The discharged BTBAS gas flows to the outside of the facing portion 63 along the surface of the wafer W and is adsorbed on the surface of the wafer W. Excess BTBAS gas that has not been adsorbed to the wafer W is exhausted from the exhaust port 65 together with the O ₃ gas below the facing portion 63 and removed. Further, the discharged N ₂ gas flows to the inside of the facing portion 63 along the surface of the wafer W so as to prevent the surplus BTBAS gas from flowing out of the exhaust port 65, and the above-described BTBAS gas and It is removed from the exhaust port 65 together with the O ₃ gas. By forming the gas flow in this way, a BTBAS gas atmosphere is locally formed in a region inside the exhaust port 65 in the space between the facing portion 63 and the wafer W. This region of the BTBAS gas atmosphere is referred to as a source gas adsorption region 60. In the processing space 10, the outer region of the source gas adsorption region 60 is an O ₃ gas atmosphere (see the upper part of FIG. 10).

Due to the rotation of the wafer W and the rotation of the gas supply head 62, the position of the source gas adsorption region 60 in the plane of the wafer W is moved. As a result, the area that has been exposed to the O ₃ gas atmosphere in the plane of the wafer W is exposed to the BTBAS gas atmosphere, and the BTBAS gas is adsorbed to the area and is exposed to the BTBAS gas atmosphere. A region where the BTBAS gas is adsorbed is exposed to an O ₃ gas atmosphere (see the middle stage of FIG. 10). By being exposed to the O ₃ gas atmosphere in this way, the adsorbed BTBAS gas is oxidized, and a molecular layer of SiO ₂ is formed as a reaction product (see the lower part of FIG. 10).

The facing portion 63 of the gas supply head 62 passes through the entire surface of the wafer W once, and one or more SiO ₂ molecular layers are formed on the entire surface of each wafer W. Thereafter, the rotation of the wafer W and the rotation of the gas supply head 62 are continued, and the facing portion 63 repeatedly passes through the entire surface of the wafer W a plurality of times. As viewed from each part in the plane of the wafer W, BTBAS gas and O ₃ gas are alternately and repeatedly supplied. Thereby, a molecular layer of SiO ₂ is laminated. By stacking the molecular layers in this way, a SiO ₂ film is formed on the entire surface of the wafer W, and the thickness of the SiO ₂ film increases. When the thickness of the SiO ₂ film reaches a desired size, the gas supply and exhaust from the gas supply head 62 are stopped, and the rotation of the wafer W and the rotation of the gas supply head 62 are stopped. Then, the wafer W is transferred to the transfer mechanism 29 by the reverse operation to the transfer to the wafer holder 26 and transferred from the processing space 10. Note that the entire surface of the wafer W described above means the entire semiconductor device formation region on the surface of the wafer W. Therefore, even if the SiO ₂ film is not formed on the periphery of the wafer W outside the formation region. Good.

According to the film forming apparatus 1, a region where the BTBAS gas is locally supplied is formed between the facing portion 63 of the gas supply head 62 and the surface of the wafer W, and the BTBAS gas is supplied in the processing space 10. The BTBAS gas and the purge gas are discharged from the gas supply head 62 and exhausted so that an O ₃ gas atmosphere is formed outside the region to be discharged, and the O ₃ gas is discharged from the gas shower head 51. Has been done. Then, the gas supply head 62 and the wafer W are rotated by the rotation mechanism 73 of the source gas supply unit 6 and the drive unit 34 of the wafer holder 26 so that the source gas is supplied to the entire surface of the wafer W. In such a film forming process, after one of the BTBAS gas atmosphere and the O ₃ gas atmosphere is formed in the vacuum vessel 11, the entire processing space 10 is purged and exhausted to remove the remaining gas before forming the other. Therefore, it is possible to prevent a decrease in throughput. Further, according to the film forming apparatus 1, it is not necessary to perform the revolution of the wafer W during the film forming process described in the background art section. Therefore, it is possible to suppress a difference in the time of contact with the source gas at each part in the surface of the wafer W due to the revolution, and thus the uniformity of the film thickness distribution of the wafer W can be improved. In addition, the inventor of the present invention has confirmed by performing a simulation that the region where the source gas is supplied can be limited as described above by configuring the gas supply head 62 with the above-described configuration. .

  Unlike the case of revolving the wafer W, the centrifugal force acts on each part of the circumference of the wafer W with high uniformity during the film forming process in the film forming apparatus 1, so that the wafer W may move in the wafer holder 26. It can be suppressed. Therefore, since the back surface of the wafer W is rubbed against the bottom surface of the wafer holder 26 and the side surface of the wafer W is prevented from colliding with the side wall of the wafer holder 26, the generation of particles can be suppressed. Furthermore, it is possible to prevent the wafer W from being detached from the wafer holder 26 due to the centrifugal force.

  Incidentally, in the film forming apparatus 1, the gas supply head 62 and the wafer W are not limited to rotating at a constant speed. Therefore, according to the film forming apparatus 1, the relative moving speed of the gas supply head 62 in each part within the surface of the wafer W is adjusted by adjusting the rotation speed of the wafer W and / or the rotation speed of the gas supply head 62. Thereby, the uniformity of the film thickness can be further improved in the plane of the wafer W.

  Specifically, as a result of performing the processing at a constant rotational speed of the gas supply head 62 during the film formation process, when the film thickness in the central portion is larger than the peripheral portion of the wafer W, the gas supply head 62 The amount of BTBAS gas adsorbed on the peripheral edge of the wafer W is increased by making the rotational speed when moving on the peripheral edge side of the wafer W smaller than the rotational speed when moving on the central edge side of the wafer W. Thereby, the film thickness of the peripheral portion can be increased, and the uniformity of the film forming process within the surface of the wafer W can be improved. Further, when the gas supply head 62 passes over the peripheral portion of the wafer W, the rotation speed of the wafer W is reduced compared to when the gas supply head 62 passes over the central portion of the wafer W. The film thickness of the peripheral portion may be increased by increasing the amount of BTBAS gas adsorbed on the peripheral portion. That is, when the gas supply head 62 passes over the peripheral edge of the wafer W, the relative moving speed with respect to the wafer W is relative to the wafer W when the gas supply head 62 passes over the center of the wafer W. The rotation of the gas supply head 62 and the wafer W is controlled so as to be lower than the moving speed. On the contrary, when the film thickness of the peripheral portion is larger than the central portion of the wafer W, the relative moving speed of the gas supply head 62 with respect to the wafer W when the gas supply head 62 passes over the central portion of the wafer W The rotation of the gas supply head 62 and the wafer W is controlled so as to be smaller than the relative moving speed with respect to the wafer W when passing over the peripheral edge of the wafer W.

Further, according to the film forming apparatus 1, the correlating motion between the gas supply head 62 and the wafer W is controlled, that is, the moving speed of the gas supply head 62 and / or the rotational speed of the wafer W is controlled. In addition to controlling the adsorption amount of the BTBAS gas described above, the number of ALDs can be controlled, thereby controlling the film thickness. That is, the number of repetitions of alternately supplying BTBAS gas and O ₃ gas can be controlled for each part of the wafer W. For example, since the number of times of ALD can be controlled in each part in the radial direction of the wafer W, the film thickness of each part in the radial direction can be set to a desired size. Therefore, it is possible to form the film so that the film thicknesses formed at the peripheral part and the central part of the wafer W are equal to each other, and the film thickness of one of the peripheral part and the central part is larger than the film thickness of the other. The film can also be formed so as to be larger.

In addition, since the O ₃ gas is not supplied to the region where the BTBAS gas is supplied in the film forming apparatus in which the wafer W revolves, the time for oxidizing the BTBAS gas in the plane of the wafer W is adjusted by the O ₃ gas. However, the film forming apparatus 1 controls the rotation speed of the gas supply head 62 and the rotation of the wafer W as described above. By doing so, the length of the oxidation time can be controlled. That is, when it is desired to lengthen the oxidation time, the rotational speed is made relatively small, and after the source gas adsorption region 60 is located in a predetermined region in the surface of the wafer W, the source gas adsorption region 60 is next placed in the region. What is necessary is just to lengthen the time until is located. Thus, the film forming apparatus 1 has an advantage that the length of the oxidation time can be easily adjusted.

Further, the rotation center of the wafer W of the film forming apparatus 1 and the peripheral portion of the wafer W are larger than the distance between the center of revolution in the case of revolving the wafer W and the peripheral portion of the wafer W farthest from the center of revolution. The distance becomes smaller. Therefore, since the speed of the peripheral portion of the wafer W can be relatively reduced in the film forming apparatus 1, the time when the peripheral portion is in contact with the BTBAS gas and the time when the adsorbed BTBAS gas is in contact with the O ₃ gas are oxidized. Can be made relatively long. Therefore, the film forming apparatus 1 has an advantage that it is possible to suppress a reduction in processing uniformity in the plane of the wafer W due to the oxidation time.

  In the film forming apparatus 1, the region to which the BTBAS gas is supplied is limited to the lower part of the facing portion 63 of the gas supply head 62, so that the region to which the BTBAS gas is supplied outside the surface of the wafer W is reduced. be able to. Therefore, an increase in processing cost can be suppressed. Further, since the wafer W is rotated around its center during the film forming process, the heater 36 is placed outside the rotation shaft 33 when the bottom surface of the vacuum vessel 11 is viewed in the radial direction as shown in the above example. The entire wafer W can be heated by disposing it only on the substrate. Instead of arranging the heater 36 only on the outer side of the rotating shaft 33 as described above, the heater 36 may be arranged only on the inner side. Thus, since the area | region required in order to provide the heater 36 is comparatively small, the freedom degree of arrangement | positioning of the heater 36 can be made high. In the above example, the heater 36 is provided in a vacuum atmosphere in the vacuum vessel 11, but may be provided in an air atmosphere outside the vacuum vessel 11, for example.

In the film forming process 1, the wafer W of each wafer holder 26 is processed so as to form a film with the same film thickness. That is, the wafer holders 26 rotate at the same speed and the wafers W rotate at the same speed. However, for example, the rotational speed of each wafer holder 26 and / or the rotational speed of each wafer W is set to a different speed so that SiO ₂ films having different film thicknesses are formed on the wafers W of each wafer holder 26. Good. In the above example, six gas shower heads 51 are arranged. However, since it is sufficient if an O ₃ gas atmosphere can be formed in the processing space 10, only one gas shower head 51 may be provided.

(First modification of the first embodiment)
In FIG. 11, the film-forming apparatus 81 which concerns on the 1st modification of 1st Embodiment is shown. The difference from the film forming apparatus 1 will be mainly described. In the film forming apparatus 81, the exhaust port 37 is opened at the center of the surface of the holder mounting table 23 instead of being provided at the peripheral edge of the bottom surface of the wafer W. ing. In the center of the back surface of the holder mounting table 23, a rotating cylinder 82 is provided so as to support the holder mounting table 23 in place of the rotating shaft 21, and the exhaust port 37 is formed on the rotating cylinder. 82 communicates. One end of an upright exhaust pipe 83 is provided on the lower side in the rotary cylinder 82 and opens into the processing space 10 through the exhaust port 37. The other end of the exhaust pipe 83 is connected to the exhaust mechanism 39.

  In the figure, 84 is a seal member that seals the gap between the inner periphery of the opening 18 at the bottom of the container body 13 and the outer periphery of the rotary cylinder 82, and 85 in the figure is the outer periphery of the exhaust pipe 83 and the inner periphery of the rotary cylinder 82. It is a sealing member which seals the clearance gap. These sealing members 84 and 85 seal each gap so that the rotary cylinder 82 can rotate around its axis. In the figure, reference numeral 86 denotes a rotating mechanism that is composed of a motor and a belt and rotates the rotating cylinder 82 around its central axis.

(Second modification of the first embodiment)
FIG. 12 shows a film forming apparatus 86 according to a second modification of the first embodiment. However, some of the parts that are configured in the same manner as the film forming apparatus 1 are not shown. The difference in configuration between the film forming apparatus 86 and the film forming apparatus 1 will be described. In this film forming apparatus 86, the holder holding unit 35 does not move up and down, and the holder mounting table 23 moves up and down. The rotating shaft 21 of the holder mounting table 23 is connected to a drive unit 87 instead of the rotation mechanism 22, and the holder mounting table 23 is moved up and down and rotated by the drive unit 87.

  In the film forming apparatus 86, the delivery of the wafer W to the wafer holder 26 is different from the delivery in the film forming apparatus 1. To explain this difference, as shown in FIG. 12, first, in the state where the holder mounting table 23 is positioned higher than the holder holding portion 35, the rotation of the holder mounting table 23 and the lifting pins 42 The wafer W is transferred to the wafer holder 26 from the transfer mechanism 29. When the wafer W is delivered to all the wafer holders 26, the holder holding portion 35 is positioned below the center portion of the back surface of the wafer holder 26 (the upper stage in FIG. 13), and then the holder mounting table 23 is lowered. . Then, the holder holder 35 causes the wafer holder 26 to rise from the holder placement section 25 of the holder placement table 23 and the holder holder 35 holds the wafer holder 26, so that the wafer holder 26 can be rotated by the holder holder 35. (Lower row in FIG. 13).

  When the wafer W is transferred from the wafer holder 26 to the transfer mechanism 29, an operation opposite to the above operation is performed. For example, the wafer holder 26 is provided with a pin as an engaging portion, and the holder holding portion 35 is provided with a concave portion as an engaged portion, and the pin is inserted into the concave portion to engage with the wafer holder as described above. 26 can be held by the holder holding portion 35. The holder holding part 35 may be provided with pins, and the wafer holder 26 may be provided with a recess.

(Third Modification of First Embodiment)
Each stage of FIG. 14 shows a film forming apparatus 91 according to a third modification of the first embodiment. This film forming apparatus 91 is configured in the same manner as the film forming apparatus 1 except that it includes a holder holding part 92 having a shape different from that of the holder holding part 35, and is less related to the transfer of the wafer W. The illustration of the members of the part is omitted. FIG. 15 shows the holder holding portion 92 viewed from below, and the holder holding portion 92 includes a circular portion 93 corresponding to the holder holding portion 35 and a blade portion 94 extending radially from the circular portion in three directions. ing. The circular portion 93 holds the center of the back surface of the wafer holder 26.

  Similar to the film forming apparatus 1, in the film forming apparatus 91, the elevating pins 42 are moved up and down and the holder mounting table 23 is rotated while the holder holding portion 92 is positioned below the holder mounting table 23. Then, the wafers W are sequentially delivered to each wafer holder 26. The upper part of FIG. 14 shows a state in which the elevating pin 42 is moving up and down. When the elevating pins 42 are moved up and down in this way, the direction of each blade portion 94 of the holder holding portion 92 is such that it does not overlap the through hole 28 of the wafer holder 26 as shown in the upper part of FIG.

  When the transfer of the wafer W to the wafer holder 26 is completed and the elevating pins 42 are positioned below the holder holding portion 92, the lifting is performed after the holder holding portion 92 rotates so that each blade portion 94 overlaps the through hole 28 of the wafer holder 26. To do. Thereby, the wafer holder 26 is held by the circular portion 93 of the holder holding portion 92 and the through hole 28 is closed by the blade portion 94. The lower part of FIG. 14 shows a state in which the wafer holder 26 is held as such, and the lower part of FIG. 15 shows the positions of the through hole 28 and the blade part 94 at this time.

  In the film forming apparatus 91, the wafer W is rotated in a state where the through hole 28 is closed from the back side of the wafer holder 26 as described above, and the film forming process is performed. By closing the through hole 28 in this way, gas flows from the back surface of the wafer holder 26 to the back surface of the wafer W through the through hole 28 even if a pressure difference occurs between the front surface side and the back surface side of the wafer holder 26. Is prevented. As a result, detachment of the wafer W from the wafer holder 26 can be suppressed.

  FIG. 16 shows a holder holding portion 96 as viewed from below as another configuration of the holder holding portion. The holder holding part 96 is configured in a circular shape like the holder holding part 35 of the film forming apparatus 1, but its diameter is larger than the diameter of the holder holding part 35. The central portion of the back surface of the wafer holder 26 is held and the through hole 28 of the wafer holder 26 can be closed. FIG. 17 shows an example of the position of the elevating pins 42 when the film forming apparatus 1 is configured to include the holder holding portion 96. In this example, the elevating pins 42 move up and down between one holder holding portion 96 and another holder holding portion 96 adjacent to the one holder holding portion 96 when the processing space 10 is viewed in the circumferential direction. It is configured. With this arrangement, the wafer W can be transferred to the wafer holder 26 without the lifting pins 42 interfering with the holder holding portion 96.

(Second Embodiment)
Next, the film forming apparatus 101 according to the second embodiment shown in FIG. 18 will be described focusing on differences from the film forming apparatus 81 shown as the first modification of the first embodiment. In the film forming apparatus 101, the exhaust port 89 is not provided at the center of the surface of the holder mounting table 23, and the exhaust port 37 is provided at the periphery of the bottom surface of the container body 13, as in the film forming apparatus 1. ing. The holder mounting table 23 is provided with a center through hole 102 that passes through the center of the holder mounting table 23 in the front and back direction, and communicates with the rotary cylinder 82. A lower end portion of the rotary cylinder 82 extends to the outside of the vacuum vessel 11 through a ring-shaped opening 103 formed so as to surround the outside of the opening 18 on the bottom surface of the container body 13. Seal members 84 and 85 respectively provided on the outer side and the inner side seal the gap between the opening 103 and the rotary cylinder 82, respectively.

  Instead of the source gas supply unit 6, the film forming apparatus 101 is provided with a source gas supply unit 111 configured in the same manner as the source gas supply unit 6. In the source gas supply unit 111, members configured in the same manner as the source gas supply unit 6 are denoted by the same reference numerals as the members of the source gas supply unit 6. The difference between the raw material gas supply unit 111 and the raw material gas supply unit 6 is that the outer cylinder portion 71 opens the opening 18 at the bottom of the container body 13 from the lower side outside the vacuum vessel 11 via the O-ring 72. It is mentioned that it is provided so as to close it.

  The main body 61 constituting the source gas supply unit 111 has a central axis extending from the inside of the outer cylinder 71 to the upper side of the holder mounting table 23 through the inside of the rotary cylinder 82 and the central through hole 102. 112 and an arm 113 that extends radially from the upper end of the central shaft 112 in six directions are formed, and the tip of the arm 113 forms a gas supply head 114 that is circular in plan view. That is, the exhaust passage 65A and the gas passages 64A and 66A described in the first embodiment are provided in the gas supply head 114, the arm 113, and the central shaft 112. As described above, six gas supply heads 114 are provided, but only one of them is shown in FIG. 18 in order to prevent complication of the drawing. In FIG. 19, the upper surface of each gas supply head 114 is shown. Each gas supply head 114 can revolve around the center of the processing space 10 in a plan view by the rotation mechanism 73.

  The gas supply head 114 is configured in the same manner as the gas supply head 62 of the first embodiment except that the shape thereof is different, and the lower part of the gas supply head 114 corresponds to a facing portion of the gas supply head 62. That is, the lower surface of the gas supply head 114 is close to and faces the wafer W, and the source gas discharge port 64, the exhaust port 65, and the purge gas discharge port 66 are opened on the lower surface.

  FIG. 20 shows the operation of the gas supply head 106 during the film forming process, taking one of the six gas supply heads 106 as an example. The gas supply head 106 reciprocates between the peripheral portion and the central portion of the wafer W by alternately repeating the clockwise movement and the counterclockwise movement in plan view. When such a reciprocating movement is performed, the gas supply head 106 located at one end and the other end of the moving region is indicated by a solid line and a chain line, respectively. The center of the source gas discharge port 64 of the gas supply head 106 at the one end, the center of the source gas discharge port 64 of the gas supply head 106 at the other end, and the revolution of the gas supply head 106. The angle θ formed with the center is, for example, 30 °.

During the film forming process, in addition to the movement of the gas supply head 106 in this way, the BTBAS gas and the N ₂ gas are discharged from the gas supply head 106 in the same manner as the gas supply head 62 of the first embodiment. At the same time, exhaust is performed from the gas supply head 106. As a result, the inner region of the exhaust port 65 between the wafer W and the gas supply head 106 becomes the source gas adsorption region 60. Similarly to the first embodiment, gas is supplied from the gas shower head 51, the outside of the source gas adsorption region 60 is changed to an O ₃ gas atmosphere, and the wafer W rotates, so that the entire surface of the wafer W is rotated. A SiO ₂ film is formed. Therefore, the film forming apparatus 101 of the second embodiment also has the same effect as the film forming apparatus 1. In the example shown in FIG. 20, the gas supply head 106 reciprocates during the film forming process. However, the gas supply head 106 is not limited to reciprocating in this manner. Only one of the revolving movements may be continuously performed, and the inside of the vacuum vessel 11 may be rotated. That is, one gas supply head 106 may move on the six wafers W.

(First Modification of Second Embodiment)
Incidentally, one gas supply head 106 is not limited to be provided for one wafer W, and may be shared by a plurality of wafers W. In the first modification of the second embodiment shown in FIG. 21, only one gas supply head 106 is provided in the film forming apparatus 101 described above. The gas supply head 106 repeatedly moves, for example, clockwise in a plan view in the processing space 10 during the film forming process. That is, the BTBAS gas can be supplied to the entire surface of each wafer W by moving on the six rotating wafers W. With such a configuration, the manufacturing cost of the device can be reduced.

(Third embodiment)
FIG. 22 is a vertical perspective view of a film forming apparatus 121 according to the third embodiment. In this film forming apparatus 121, a film forming process is performed on one wafer W in the vacuum container 11. The difference from the film forming apparatus 1 will be described. The film forming apparatus 1 is not provided with the holder mounting table 23 and the holder holding portion 35, and the upper end of the rotating shaft 33 is connected to the wafer holder 26. . In the figure, reference numeral 122 denotes a seal member that seals the gap between the rotary shaft 33 and the container body 13. In the figure, reference numeral 123 denotes a horizontal ring plate surrounding the side periphery of the wafer W placed on the wafer holder 26. The peripheral edge of the ring plate 123 is bent downward to form a cylindrical bent portion 124, and the bent portion 124 is slightly separated from the side surface of the container body 13. The gap between the bent portion 124 and the inner side surface of the container body 13 communicates with the exhaust port 37 on the bottom surface of the container body 13 so that the processing space 10 can be exhausted.

  In the figure, 125 is a cylindrical portion extending downward from the back surface of the ring plate 112, 126 is a cylindrical portion extending upward from the bottom surface of the container body 13, and the upper end of the cylindrical portion 126 is connected to the lower end of the cylindrical portion 125. It enters between the lower end of the bent portion 124. Inside the cylindrical portion 125, three heaters 36 arranged concentrically are provided along the circumference of the wafer W, and the cylindrical portions 125 and 126 receive gas exhausted to the exhaust port 37. , Has a role of suppressing the heading toward the heater 36.

The film forming apparatus 121 is also provided with a source gas supply unit 6. In FIG. 22, the bearing 77, the seal members 78A to 78D, the grooves 67B and 68B, the rotation mechanism 73, and the like shown in FIG. The lid 12 of the vacuum vessel 11 of the film forming apparatus 121 is provided with a supply path 127 for supplying O ₃ gas to the processing space 10 instead of providing the gas shower head 51. Even in such a film forming apparatus 121, the film forming process can be performed without revolving the wafer W, and it is not necessary to purge and exhaust the processing space 10 to switch the entire atmosphere in the vacuum vessel 11. The effects described in the embodiment can be obtained.

In the film forming apparatus of each of the above embodiments, for example, a gas supply unit that supplies a plasma generating gas into the processing space 10 and a plasma generating unit that converts the plasma generating gas into plasma are provided, and the plasma is used to form a SiO ₂ film. May be modified. Since the wafer W is rotating during the film forming process, the region where the plasma is formed may be a size that covers the radius of the rotating wafer W. That is, since the area necessary for forming plasma can be made relatively small, the plasma generating portion can be downsized. As a result, an increase in the size of the film forming apparatus can be suppressed. The plasma generator is configured to include, for example, a coil wound around a vertical axis, and a grounded Faraday shield made of a conductive plate-like body below the coil. In the Faraday shield, in order to prevent the electric field component in the electromagnetic field generated around the coil from going to the processing space 10, for example, a large number of slits extending in the direction orthogonal to the coil are arranged in the extending direction of the coil. To form.

When the plasma processing unit is provided, a bias electrode that is opposed to the Faraday shield and to which high-frequency power is applied may be provided below the wafer holder 26. For example, the holder holding portion 35 is provided with the bias electrode, and the wiring connected to the bias electrode extends downward, for example, so as to penetrate the rotating shaft 33, and is connected to the high frequency power source outside the container body 13. To. As a result, a capacitively coupled plasma is formed in the space between the Faraday shield and the bias electrode, and ions in the plasma move up and down and collide with the wafer W, so that a relatively deep recess is formed in the wafer W. cage, even if SiO ₂ film is deposited on the recess, it is possible to reliably perform reforming of the SiO ₂ film.

For example, in the film forming apparatus 1, the gas supply head 62 is configured so that the source gas adsorption region 60 is large enough to cover the radius of the wafer W, and only the wafer W is rotated without rotating the gas supply head 62. By doing so, a film may be formed on the surface of the wafer W. Further, when the suction region 60 covers the radius of the wafer W as described above, the apparatus is configured such that the wafer W does not rotate and the gas supply head 62 rotates in the circumferential direction of the wafer W. A film may be formed on the surface of the wafer W. Furthermore, in each of the above examples, the example in which the source gas is oxidized by the oxidizing gas that is the reaction gas has been shown. However, the present invention is not limited to the oxidation of the source gas, and for example, even if the source gas is nitrided by the reactive gas Good. Specifically, for example, TiCl ₄ (titanium tetrachloride) gas is supplied as a raw material gas. Then, NH ₃ (ammonia), which is a nitriding gas, may be supplied as a reactive gas instead of the oxidizing gas, and TiN (titanium nitride) may be formed on the surface of the wafer W by ALD. The configurations shown in the embodiments and the modified examples of the embodiments can be combined with each other.

By the way, with respect to the facing portion 63 of the source gas supply head 62 shown in the first embodiment, the purge gas discharge port 66 and the exhaust port 65 can separate the region to which the source gas is supplied from the outer region. As long as it is provided. Therefore, the exhaust port 65 may be provided at a position where the purge gas discharge port 66 is opened in the facing portion 63, and the purge gas discharge port 66 may be provided at a position where the exhaust port 65 is opened in the facing portion 63. That is, the exhaust port 65 is not limited to being provided inside the purge gas discharge port 66 but may be provided outside. FIG. 23 shows the configuration of another facing portion 63. In the facing portion 63 of FIG. 23, a large number of circular purge gas discharging ports 66 are opened outside the source gas discharging port 64 at intervals in the circumferential direction of the facing portion 63. A large number of ring-shaped exhaust ports 65 are formed outside the purge gas discharge ports 66 so as to surround the purge gas discharge ports 66, respectively. The exhaust ports 65 arranged in the circumferential direction are formed close to each other, and the source gas is exhausted from the exhaust port 65 without contacting the O ₃ gas. Thus, the exhaust port 65 does not have to surround the entire circumference of the source gas discharge port 64.

W Wafer 1 Film forming apparatus 10 Processing space 11 Vacuum container 23 Holder mounting table 26 Wafer holder 34 Drive unit 51 Gas shower head 6 Source gas supply unit 64 Source gas discharge port 65 Exhaust port 66 Purge gas discharge port 73 Rotating mechanism 100 Control unit

Claims (9)

In a film forming apparatus for forming a thin film by alternately supplying a source gas for adsorbing to a substrate in a vacuum vessel and a reaction gas that reacts with the source gas,
A placement unit for placing the substrate provided in the vacuum vessel;
A source gas supply port for locally supplying source gas to the surface of the substrate, a region provided to surround the region to which the source gas is supplied, and a region to which the source gas is supplied and a region outside the region are provided. A source gas supply mechanism comprising a purge gas supply port and an exhaust port for forming an air flow for separation;
An atmosphere forming portion for forming an atmosphere of the reaction gas in the outer region;
A movement mechanism that moves the source gas supply mechanism relative to the mounting portion so that the reaction product layer is stacked on the entire surface of the substrate;
With
The source gas supply mechanism vertically penetrates the wall of the vacuum vessel, and the source gas supply port, the purge gas supply port, and the exhaust port are formed at one end thereof, and the other end is the vacuum vessel. Located outside the
The moving mechanism includes a rotation mechanism for a source gas supply mechanism for rotating the other end of the source gas supply mechanism,
Due to the rotation of the other end of the source gas supply mechanism, the source gas supply port, the purge gas supply port, and the exhaust port are opened so as to revolve and move on the substrate, and the exhaust port is the source gas. Surrounding the supply port, the purge gas supply port opens to surround the exhaust port,
The rotation radius of the other end of the source gas supply mechanism is smaller than the revolution radius of the purge gas supply port,
A first gap that surrounds the other end portion of the source gas supply mechanism and communicates with the source gas supply port, the purge gas supply port, and the exhaust port and is partitioned from the other end portion; A surrounding member forming a third gap,
A gas supply / exhaust mechanism for supplying the source gas to the first gap, supplying the purge gas to the second gap, and exhausting the third gap during rotation of the other end of the source gas supply mechanism And a film forming apparatus comprising: The moving mechanism, the film formation apparatus according to claim 1, characterized in that it comprises a rotation mechanism for placing portion that rotates the placing part as the substrate is rotated about the center. The rotating mechanism for the raw material gas supply mechanism, the film-forming apparatus according to claim 1 or 2, characterized in that moving the raw material gas supply mechanism between the upper and the peripheral portion on the central portion of the substrate. Wherein the vacuum chamber, film deposition apparatus according to any one of claims 1 to 3, characterized in that the mounting section is plurality. The film forming apparatus according to claim 4 , wherein the source gas supply mechanism is provided for each mounting portion. In a film forming method for forming a thin film by alternately supplying a source gas for adsorbing to a substrate in a vacuum vessel and a reaction gas that reacts with the source gas,
Placing the substrate on a placement portion provided in the vacuum vessel;
Supplying a source gas locally from the source gas supply port to the surface of the substrate;
Purging gas is supplied and exhausted from a purge gas supply port and an exhaust port provided so as to surround the region to which the source gas is supplied, and a region for supplying the source gas and a region outside the region are separated. Forming an air flow;
Forming an atmosphere of the reactive gas in the outer region by an atmosphere forming unit;
A moving mechanism that moves the source gas supply mechanism having the source gas supply port, the purge gas supply port, and the exhaust port with respect to the mounting portion so that the reaction product layer is stacked on the entire surface of the substrate. A moving process for relatively moving,
With
The source gas supply mechanism penetrates the wall of the vacuum vessel in the vertical direction, and a source gas supply port, a purge gas supply port and an exhaust port are formed at one end thereof, and the other end portion is formed outside the vacuum vessel. Position to,
The exhaust port surrounds the source gas supply port, the purge gas supply port opens to surround the exhaust port,
The moving step is a step of rotating the other end portion of the source gas supply mechanism with a rotation radius smaller than the revolution radius of the purge gas supply port by a rotation mechanism for the source gas supply mechanism constituting the movement mechanism ;
A first gap that surrounds the other end portion of the source gas supply mechanism and communicates with the source gas supply port, the purge gas supply port, and the exhaust port and is partitioned from the other end portion; And a surrounding member that forms a third gap,
By the gas supply / exhaust mechanism, during the rotation of the other end of the source gas supply mechanism, the supply of the source gas to the first gap, the supply of the purge gas to the second gap, and the exhaust of the third gap are performed. A process of performing;
A film forming method comprising: The film forming method according to claim 6 , wherein the moving step includes a step of rotating the mounting portion so that the substrate rotates around a central portion thereof. The moving step, according to claim 6 or 7 film forming method according to, characterized in that it comprises a step of moving the raw material gas supply mechanism between the upper central portion and on the peripheral portion of the substrate. A storage medium storing a computer program used in a film forming apparatus,
A storage medium, wherein the program has steps for executing the film forming method according to any one of claims 6 to 8 .

Images