KR101224059B1 - Substrate processing apparatus and the method thereof - Google Patents

Abstract

PURPOSE: A substrate processing apparatus and method are provided to enable the mass production of grapheme by heating a substrate accommodated in a processing chamber through RTP(Rapid Thermal Processing). CONSTITUTION: A substrate processing apparatus comprises a processing chamber(100) in which a substrate is processed and auxiliary chambers(200a,200b) connected to both sides of the processing chamber. The processing chamber includes a pair of susceptors(110) installed in a line to mount the substrate and at least one heat source units(120) arranged in parallel to the susceptors to heat the susceptors. The processing chamber and the auxiliary chambers have gas injection ports(104,210a,210b) and gas exhaust ports(105,212a,212b) to draw in and discharge gases.

Description

Substrate processing apparatus and the method

The present invention relates to a substrate processing apparatus and a processing method thereof, and more particularly, to a substrate processing apparatus and a processing method which can improve productivity by continuously depositing a thin film.

Graphene is a conductive material in which carbon atoms form a honeycomb array in two dimensions and have a layer thickness of one atom. It is a material that forms graphite in three dimensions, carbon nanotubes in one dimension, and fullerene, which is a 0-dimensional structure in the form of a ball. Graphene is not only very structurally and chemically stable but also a very good conductor, capable of transporting electrons about 100 times faster than silicon and about 100 times more electrons than copper. It was predicted.

Graphene has the advantage that it is very easy to process one-dimensional or two-dimensional nanopattern made of carbon, which is a relatively light element. In particular, by utilizing these advantages, it is possible not only to control semiconductor-conductor properties, but also to make a wide range of functional devices such as sensors and memories by using a variety of chemical defects of carbon.

However, as mentioned above, although graphene has excellent electrical / mechanical / chemical advantages, a realistic mass synthesis method that is applicable to actual commercial use has not yet been introduced. Conventionally, a method of manufacturing a thin film mainly by mechanically pulverizing graphite and dispersing it in a solution and then using a self-assembly phenomenon is known. The mechanical properties did not meet expectations. In addition, the introduction of a large-area graphene synthesis technology by the chemical vapor deposition method has recently been known that it is possible to produce a graphene thin film having a conductivity similar to that of metal, but this also requires a high cost and relatively high There was a problem that a process temperature was required.

On the other hand, rapid thermal processing (RTP) has been introduced as one method for heat treatment of substrates and the like. Rapid heat treatment is a method of rapidly heating and cooling a substrate by radiating light emitted from a heat source, such as a tungsten lamp, to rapidly heat and cool the substrate. Can be heated or cooled to In addition, there is an advantage in that pressure control or temperature control required for the process can be easily controlled.

However, in such an apparatus, the substrate after the heat treatment is maintained at a high temperature, and thus it is difficult to continuously perform the substrate treatment because the substrate is cooled to some extent in the processing space and then carried out to the outside of the apparatus. Accordingly, there is a problem in that the process efficiency is lowered and productivity is lowered.

In addition, there is a problem in that it takes unnecessary time and power to heat the substrate back to the process temperature for substrate processing, thereby increasing the production cost.

KR 2010-0111447 A1 KR 2011-0100428 A1

The present invention provides a substrate treating apparatus and a method of treating the same, which can improve process efficiency by continuously performing substrate treating.

The present invention provides a substrate processing apparatus and a processing method thereof capable of producing a large amount of graphene by a rapid heat treatment method for commercialization of a graphene thin film.

In the substrate processing apparatus according to the embodiment of the present invention, an internal space in which a substrate is processed is formed, and at least one susceptor for mounting a substrate is provided therein, and at least one surface of the substrate is disposed in parallel with the susceptor. A process chamber which includes at least one heat source unit to heat the susceptor; And an auxiliary chamber connected to at least one side of the process chamber.

The process chamber and the auxiliary chamber each include a gas inlet for injecting gas therein and a gas outlet for discharging the gas therein, and the gas inlet and the gas outlet provided in the process chamber are provided in the auxiliary chamber. It may be formed independently of the gas inlet and the gas outlet.

A liner may be formed on inner walls of the process chamber and the auxiliary chamber.

The susceptor may be provided with at least one temperature measuring unit, and the susceptor may include graphite or silicon carbide (SiC) coated graphite, silicon carbide, silicon nitride, alumina (Al). ₂ O ₃ ), aluminum nitride, and quartz.

The auxiliary chamber may be provided with an openable / closeable gate, and a valve for separating the process chamber and the auxiliary chamber may be provided at a connection portion between the process chamber and the auxiliary chamber.

In the substrate processing method according to the embodiment of the present invention, an inner space in which the substrate is processed is formed, and at least one susceptor for mounting the substrate is provided therein, and at least one surface of the substrate is disposed in parallel with the susceptor. A method of processing a substrate using a substrate processing apparatus including a process chamber including at least one heat source unit to heat the susceptor, and a first auxiliary chamber and a second auxiliary chamber connected to the process chamber. The first auxiliary chamber and the second auxiliary chamber alternately load or unload a substrate into the process chamber, and the first auxiliary chamber or the second auxiliary chamber is unloaded while the substrate is processed in the process chamber. The susceptor is heated by the radiation emitted from the heat source unit while the substrate is processed in the process chamber, and the substrate is The stand is characterized in that the indirectly heated by the susceptor.

One of the first subsidiary chamber and the second subsidiary chamber may load the substrate before the process into the process chamber, and the other may unload the substrate from the process chamber after the process.

In addition, loading and unloading of the substrate may be performed in each of the first and second auxiliary chambers.

When the substrate is loaded in the first subsidiary chamber or the second subsidiary chamber, the inside of the first subsidiary chamber or the second subsidiary chamber may be purged to form the same pressure as the inside of the process chamber.

Loading or unloading of the substrate between the process chamber and the first auxiliary chamber or the second auxiliary chamber is preferably performed after the pressures in the process chamber, the first auxiliary chamber and the second auxiliary chamber are equally adjusted. Do.

The substrate loaded into the process chamber is mounted on a susceptor provided in the process chamber, and after the substrate is mounted, a graphene thin film is formed on the substrate by supplying a process gas containing carbon into the process chamber. It may be deposited.

The cooling of the substrate may be performed by injecting a cooling gas into the first auxiliary chamber or the second auxiliary chamber, and the cooling gas may include at least one of nitrogen (N) gas, argon (Ar) gas, and helium gas. May be used.

At least one of CH ₄ , C ₂ H ₆ , C ₂ H _2, and C ₆ H ₆ is used as the process gas, a thin film of graphene is deposited on the substrate, and the substrate is nickel (Ni) or copper (Cu). ), Cobalt (Co), molybdenum (Mo), magnesium (Mg), platinum (Pt), silver (Ag), chromium (Cr), manganese (Mn), titanium (Ti) and tungsten (W) Branches may be used.

According to the substrate processing apparatus and the processing method thereof according to the present invention, at least one auxiliary chamber may be connected to a process chamber in which deposition, heat treatment, etc. of the thin film are performed to simultaneously process and cool the substrate, thereby depositing and heat treating the thin film. The substrate on which the back is completed can be effectively cooled in the auxiliary chamber. Such cooling of the substrate can be performed while processing another substrate in the process chamber, so that the substrate processing can be performed continuously. As a result, since the substrate processing process can be continuously performed, productivity can be improved.

In addition, according to the substrate processing apparatus and the processing method thereof according to the present invention, since the cooling of the substrate is performed in the auxiliary chamber, it is not necessary to lower the temperature of the process chamber unnecessarily, thereby reducing the power consumption used to raise the temperature in the process chamber. It can also reduce production costs.

In addition, according to the substrate processing apparatus and the processing method according to the present invention, by applying a rapid thermal processing (RTP) method it is possible to mass-produce the graphene by heating the substrate accommodated in the process chamber. As a result, it is possible to commercialize graphene having many advantages in electrical, mechanical, and chemical terms.

In particular, it comprises a process chamber and a heat source for irradiating radiant light, and heats the susceptor primarily by the heating action of the heat source, and then the substrate secondarily by heat transfer (ie radiation or conduction) of the heated susceptor. As it is uniformly heated, the graphene thin film can be easily manufactured.

1 is a cross-sectional view and a plan view of a substrate processing apparatus according to a first embodiment of the present invention.
2 is a cross-sectional view of the process chamber.
3 shows an embodiment of a heat source unit.
4 shows another embodiment of a heat source unit.
5 is a conceptual view showing an arrangement of heat sources constituting the heat source unit.
6 is a schematic view of a substrate transfer device.
7 is a cross-sectional view of a substrate processing apparatus according to a second embodiment of the present invention.
8 is a conceptual diagram for explaining a principle that the substrate is heated when manufacturing the graphene by the substrate processing method according to an embodiment of the present invention.
9 is a view sequentially showing a substrate processing process according to a first embodiment of the present invention.
10 is a view sequentially showing a substrate processing process according to a second embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Wherein like reference numerals refer to like elements throughout.

1 is a cross-sectional view and a plan view of a substrate processing apparatus according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view of a process chamber. 3 is a view showing an embodiment of a heat source unit, FIG. 4 is a view showing another embodiment of a heat source unit, and FIG. 5 is a conceptual diagram showing an arrangement of heat sources constituting the heat source unit. 6 is a schematic view of a substrate transfer device.

Referring to FIG. 1, a substrate processing apparatus according to an exemplary embodiment of the present disclosure may include a process chamber 100 that provides an internal space in which a substrate S is processed, and a first chamber that is connected to both sides of the process chamber 100, respectively. The auxiliary chamber 200a and the second auxiliary chamber 200b are included. Here, although it is described that the two auxiliary chambers 200a and 200b are connected to the process chamber 100, two or more auxiliary chambers may be connected as necessary.

The process chamber 100 is a structure in which a space for accommodating and heating the substrate S is provided therein, that is, a vacuum heating space is provided. The coarse shape may be formed in a hollow box shape or a block shape as shown. In addition, the process chamber 100 may be integrally manufactured with one body, but may have an assembly body in which several components are connected or combined. In this case, a sealing means (not shown) is added to the connection portion between the components. It may be provided as an enemy. Accordingly, energy to be supplied into the apparatus when the substrate S is heated or cooled can be reduced.

In addition, the process chamber 100 includes a susceptor 110 having a substrate S mounted therein, and at least one heat source disposed in parallel with the susceptor 110 and emitting radiation to heat the susceptor 110. Unit 120 is included. In the present embodiment, the heat source unit 120 will be described as an example disposed on the upper and lower portions of the process chamber 100, the heat source unit 120 may be provided only on the upper or lower portion of the process chamber 100. The shape of the process chamber 100, the connection form of the heat source unit 120, and the number of susceptors 110 may vary depending on the location where the heat source unit 120 is provided. The effect is the same. Therefore, hereinafter, an embodiment of the present invention will be described with reference to FIG. 2.

The process chamber 100 shown in FIG. 2 includes a hollow body 102 having an open top, and a lid 101 coupled to an upper portion of the body 102. Here, the lid 101 is used as a heater block, and a fixing groove 107 for mounting the heat source unit 120 is formed. In addition, a fixing groove 107 for mounting the heat source unit 120 is formed in the lower body 102. The fixing groove 107 may be formed in an arch shape so that the radiation emitted from the heat source unit 120 may be focused and irradiated to the susceptor 110. In addition, the fixing groove 107 may be formed larger than the heat source unit 120 so that the surface of the fixing groove 107 and the surface of the heat source unit 120 may be formed to be spaced apart so that the radiation light can be effectively collected. .

In addition, a first valve 420a and a second valve 420b for separating a space from the first subsidiary chamber 200a and the second subsidiary chamber 200b are formed on both side walls of the body 102 of the process chamber 100. Each may be provided. The first valve 420a and the second valve 420b are formed to be opened and closed to be used as a transfer path of the substrate S for loading or unloading the substrate S, and at the same time, the process chamber 100 when performing the process. Seal the inside.

The outside of the process chamber 100 is provided with a gas supply unit (not shown) for supplying a process gas into the interior space of the process chamber 100, the process gas supplied from the gas supply unit on one side of the process chamber 100 A first gas inlet 104 for injecting into the chamber 100 is formed, and on the other side of the process chamber 100 facing the first gas inlet 104 for discharging the gas inside the process chamber 100. The first gas outlet 105 is formed. Although FIG. 1B shows that the first gas inlet 104 and the first gas outlet 105 are formed in a direction in which the first auxiliary chamber 200a and the second auxiliary chamber 200b are not connected, the substrate If the transfer of the (S) is not hindered, the first auxiliary chamber 200a and the second auxiliary chamber 200b may be formed on both side walls of the body 102 to be connected.

In order to more effectively discharge the gas inside the process chamber 100 through the first gas outlet 105, a pump (not shown) may be mounted on an exhaust line (not shown) connected to the first gas outlet 105. have. Through such a configuration, pressure control such as vacuum formation in the process chamber 100 may be performed.

A liner (not shown) may be formed on the inner wall of the process chamber 100. The liner is formed anywhere within the process chamber 100 where the process gas can reach to adsorb contaminants generated during the process. In this way, by applying the liner to the inner wall of the process chamber 100, it is possible to extend the maintenance cycle of the equipment by replacing only the liner without cleaning the entire equipment. In this case, the liner is graphite or silicon carbide (SiC) coated graphite, silicon carbide, silicon nitride, alumina (Al ₂ O ₃ ), aluminum nitride and quartz (Quartz) It may be formed of at least one of).

The susceptor 110 is installed in the process chamber 100 in parallel with the arrangement direction of the heat source unit 120. The susceptor 110 supports the substrate S and prevents the substrate S from being directly exposed to the radiation emitted from the heat source unit 120. In other words, in the present embodiment, as a substrate for depositing graphene, nickel (Ni), copper (Cu), cobalt (Co), molybdenum (Mo), magnesium (Mg), platinum (Pt), silver (Ag), and chromium are used. (Cr), manganese (Mn), titanium (Ti) and tungsten (W), such as a thin metal plate is used, as in the conventional rapid heat treatment apparatus when radiated light is directly irradiated onto the substrate (S), the radiation (S) Reflected by) may cause a lot of time and power consumption to heat the substrate (S) to the process temperature. Therefore, the substrate S is indirectly formed by the susceptor 110 heated by the radiation by mounting the substrate S on the susceptor 110 formed of a material having good thermal conductivity and absorbing the radiation. It was allowed to heat up. The susceptor 110 is graphite (graphite) or silicon carbide (SiC) coated graphite, silicon carbide, silicon nitride, alumina (Al ₂ O ₃ ), aluminum nitride (Aluminum nitride) And quartz (Quartz). When the heat source unit 120 is formed only on one of the lower part and the upper part of the process chamber 100, a pair of susceptors 110 may be used as shown in FIG. 2, but only one susceptor may be used. have. In this case, it is important to allow the susceptor 110 to be disposed between the substrate S and the heat source unit 120.

In addition, when a pair of susceptors 110 are used, the deposition of graphene may be facilitated by maintaining the substrate S at a constant temperature during the deposition of graphene. In addition, the substrate S may be mounted on each of the pair of susceptors 110.

Such susceptor 110 may be installed by fixing to the wall of the process chamber 100 using at least one support (not shown). At this time, the support is preferably installed so as not to interfere with the inflow of the process gas or the progress of the radiation emitted from the heat source unit 120.

The susceptor 110 may be formed with a temperature measuring unit (not shown) for measuring the temperature of the susceptor 110. The temperature measuring unit may be formed on at least one of the pair of susceptors 110, may be formed on the plate-shaped susceptor 110 at regular intervals, or may be formed at the center and each edge thereof. The formation position is not limited to this.

The heat source unit 120 is installed in the fixing groove 107 formed in the process chamber 100 to heat the susceptor 110 installed in the process chamber 100. The heat source unit 120 includes a heat source 122 generating radiation light, and a window 124 surrounding and protecting the heat source 122 and transmitting the radiation light generated from the heat source 122 to the outside. As the heat source 122, at least one of a tungsten halogen lamp, a carbon lamp, and a ruby lamp may be used, and a linear heat source 122 may be used as shown in FIG. A bulb type heat source 122a may be used as shown.

In the case of using the linear heat source 122, as shown in FIG. 5 (a), the plurality of heat source units 120 may be arranged side by side at regular intervals, or as shown in FIG. 5 (b). The plurality of heat source units 120 may be arranged in a grid form. In this case, as shown in (a) of Figure 3 by inserting a sealing member 130, such as an O-ring in the connection portion of the heat source unit 120 and the lead 101 to seal the inside of the process chamber 100 during the process It is preferable to prevent the process gas in the chamber 100 from flowing out. In addition, in order to prevent the heat source unit 120 from being exposed to the internal space of the process chamber 100 after the heat source unit 120 is mounted in the fixing groove 107, a transmission window (not shown) in front of the heat source unit 120. You can also install Through such a configuration, the thin film material may be suppressed from being deposited on the heat source unit 120 in the process of depositing the thin film, thereby extending the life of the heat source unit 120.

A reflective film 126 as shown in FIG. 3B may be formed on a portion of the surface of the heat source 122. In the case of the linear heat source 122, radiation is radiated radially, and since the susceptor 110 that is a heating target is disposed to face the heat source 122, the susceptor 110 is controlled by controlling the traveling direction of the radiation emitted from the heat source 122. It is necessary to increase the heating efficiency of). Therefore, the reflective film 126 for reflecting the radiation light toward the susceptor 110 may be formed on a portion of the surface of the heat source 122. The reflective film 126 may be formed on an outer circumferential surface of 20 ° to 300 ° from the center of the heat source 122. When the reflective film 126 is formed in a wider range than the range shown, the area through which radiated light is transmitted becomes very narrow, making it difficult to uniformly heat the susceptor 110. There is a problem that it is difficult to effectively heat the susceptor 110 by reducing the degree of reflection of the emitted light through. The reflective film 126 may be formed of a material having excellent reflectance, and may be formed of a metal material such as ceramic, Ni, or Ni / Au alloy.

The reflective film may be formed on the surface of the fixing groove 107 in which the heat source unit 120 is installed. Since the fixing groove 107 is formed in an arc shape to collect the radiation light emitted from the heat source 122, when a reflective film is formed on the surface of the fixing groove 107, the radiation light is reflected from the surface of the fixing groove 107 to susceptor. It can be irradiated to the (110) side. Through this, the light collecting efficiency of the radiation can be further improved, and thus the susceptor 110 can be efficiently heated using less power.

In the case of using the bulb-shaped heat source 122a as shown in FIG. 4, the plurality of heat source units 120a may be arranged at regular intervals to be adjacent to each other or radially arranged as shown in FIG. 5C. In this case, the cylindrical groove 107 may be inserted into the fixing groove 107 formed in the lid 101 to prevent the heat source 122a from being directly exposed to the inner space of the process chamber 100.

Internal spaces for accommodating the substrate S are formed in the first and second auxiliary chambers 200a and 200b, and substrate transport apparatuses 300a and 300b for supporting and transporting the substrate S are formed therein. Each is provided. The substrate transfer apparatuses 300a and 300b may be formed to transfer one substrate, or may be formed to transfer a plurality of substrates. For example, the substrate transfer devices 300a and 300b are connected to a column part 310 and a column part 310 which are fixed at a predetermined point and rotated in a horizontal direction, as shown in FIG. 6. The arm unit 312 may be configured to be stretched and driven by the multi-axial link. An end effector 314 may be provided at an end of the arm 312 to hold the substrate. The substrate S held by the end effector 314 may be transported to the susceptor 110 in the process chamber 100 and then loaded. At this time, the susceptor 110 has a lift pin that can form a space between the substrate and the susceptor 110 so that the end effector 314 can easily unload the substrate loaded on the susceptor 110. (Not shown) or the like may be formed. A support plate (not shown) may be formed on the lift pin to sufficiently support the substrate S, and the support plate may be formed to suck the substrate S in a vacuum. In addition, the lift pin and the support plate may be formed of the same material as the susceptor 110, or may be formed using a material having substantially similar thermal conductivity to the susceptor 110. This is to allow the susceptor 110, the lift pins and the support plate to be heated to a uniform temperature. The lift pins may be formed between the heat source units 120 and pass through the process chamber 100 so as not to prevent the susceptor 110 from being heated by the heat source unit 120, and may be installed outside the process chamber 100. It can be driven through the driving means (not shown).

On the other hand, when two substrates are introduced into the first and second subsidiary chambers 200a and 200b, a pair of arm portions may be connected to the column portions constituting the substrate transfer apparatuses 300a and 300b. In the case of introduction, a cassette (not shown) for mounting a plurality of substrates in the first and second subsidiary chambers 200a and 200b is provided, and the substrate is introduced into the cassette and then mounted in the cassette using a substrate transfer device. The substrates may be loaded into the auxiliary chambers 200a and 200b one by one. In addition, after the cassettes having a plurality of substrates are introduced into the first and second auxiliary chambers 200a and 200b, the substrate S is loaded into the process chamber 100 using the substrate transfer apparatuses 300a and 300b described above. You may.

In addition, each of the first and second auxiliary chambers 200a and 200b includes second gas inlets 210a and 210b for supplying cooling gas therein and second gas outlets 212a and 212b for discharging the internal gas. Is formed. Since the second gas inlets 210a and 210b and the second gas outlets 212a and 212b are formed independently of the first gas inlet 104 and the first gas outlet 105 formed in the process chamber 100, the process is performed. The atmosphere and the pressure inside the chamber 100 and the first and second auxiliary chambers 200a and 200b may be individually adjusted.

In addition, the exhaust gas connected to the second gas outlets 212a and 212b to more effectively discharge, that is, purge the gas in the first and second auxiliary chambers 200a and 200b through the second gas outlets 212a and 212b. It is also possible to mount a pump (not shown) on a line (not shown). Through such a configuration, pressure control such as vacuum formation may be performed in the first and second auxiliary chambers 200a and 200b.

One side of the first and second auxiliary chambers 200a and 200b is provided with first and second gates 410a and 410b which are formed to be opened and closed. The first and second gates 410a and 410b are used as transfer paths of the substrate S when opened, and seal the inside of the first and second auxiliary chambers 200a and 200b when closed.

The first and second subsidiary chambers 200a and 200b formed as described above may be loaded and unloaded together with the substrate S, and any one of the first subsidiary chamber 200a and the second subsidiary chamber 200b may be used. One may be used to perform only loading of the substrate S and the other to perform only unloading of the substrate S. FIG. This will be described later in the substrate processing method described later.

7 is a cross-sectional view of a substrate processing apparatus according to a second embodiment of the present invention.

Referring to FIG. 7, the substrate processing apparatus includes a process chamber 100a and an auxiliary chamber 200c connected to one side of the process chamber 100a. In the above-described first embodiment, the first subsidiary chamber 200a and the second subsidiary chamber 200b are connected to both sides of the process chamber 100. However, in the present embodiment, one subsidiary chamber is connected to the process chamber 100a. Only 200c is connected.

Therefore, since one auxiliary chamber 200c is connected to the process chamber 100a, a valve, which is a transfer passage of the substrate S, is formed only at the connection portion between the process chamber 100a and the auxiliary chamber 200c.

In order to continuously perform the process using the substrate processing apparatus as described above, at least two substrates S must be introduced into the auxiliary chamber 200c, and a thin film is formed on all the substrates S introduced in the auxiliary chamber 200c. Once deposited, it is preferable to carry them out, and then introduce new substrates S into the auxiliary chamber 200c.

The method of depositing a thin film on a board | substrate using the substrate processing apparatus which has such a structure is demonstrated.

8 is a conceptual diagram illustrating a principle in which a substrate is heated when manufacturing graphene by the substrate treating method according to an embodiment of the present invention, and FIG. 9 sequentially processes the substrate treating process according to the first embodiment of the present invention. Figure showing.

First, the first gate 410a and the second gate 410b are opened and the substrates S1 and S2 are introduced into the first auxiliary chamber 200a and the second auxiliary chamber 200b, respectively (FIG. 9 (a). )). The substrates S1 and S2 are nickel (Ni), copper (Cu), cobalt (Co), molybdenum (Mo), magnesium (Mg), platinum (Pt), silver (Ag), chromium (Cr), and manganese (Mn). ), At least one of titanium (Ti) and tungsten (W) may be used.

When the substrates S1 and S2 are introduced into the first auxiliary chamber 200a and the second auxiliary chamber 200b, the first gate 410a and the second gate 410b are closed and the first auxiliary chamber 200a is closed. The second auxiliary chamber 200b and the process chamber 100 are purged. In this case, the first subsidiary chamber 200a and the second subsidiary chamber 200b may be controlled to be the same as the pressure in the process chamber 100 in which the process is performed, and at this time, the process chamber 100, the first and second The interior of the auxiliary chambers 200a and 200b may be adjusted to a vacuum in the range of 0.01 to 50 torr.

Thereafter, the first valve 420a is opened and the substrate S1 is loaded between the susceptors 110 installed in the process chamber 100 using the substrate transfer device 300a. When the substrate S1 is loaded, the first valve 420a is closed and the heat source unit 120 is operated to heat the susceptor 110 while supplying a process gas through the first gas inlet 104 to supply the process gas. Graphene is deposited on (FIG. 9B). At this time, the susceptor 110 may be heated up to about 800 to 1050 ℃, a gas containing carbon, such as CH ₄ , C ₂ H ₆ , C ₂ H ₂ , C ₆ H ₆ may be used as the process gas. . While graphene is deposited on the substrate S1, process gas is supplied through the first gas inlet 104, and unreacted gas and residues are discharged through the first gas outlet 105.

When the graphene thin film having a desired thickness is deposited on the substrate S1, the first valve 420a is opened and the substrate S1 is unloaded into the first auxiliary chamber 200a by using the substrate transfer device 300a. Next, the first valve 420a is closed. Then, the second valve 420b is opened, and then the substrate S2 is loaded between the susceptors 110 in the process chamber 100 using the substrate transfer device 300b, and the second valve 420b is closed. . In this case, the opening of the first valve 420a and the second valve 420b may be sequentially or simultaneously.

Subsequently, the substrate S1 unloaded into the first auxiliary chamber 200a is cooled, and a graphene thin film is deposited on the substrate S2 in the process chamber 100 (FIG. 9C). In this case, at least one cooling gas of nitrogen (N), argon (Ar), and helium (He) may be supplied into the first auxiliary chamber 200a through the second gas inlet 210a. The cooling gas may be supplied through at least one of the top, bottom, and side surfaces of the first auxiliary chamber 200a, and for the rapid cooling of the substrate S1, the cooling gas may be supplied to the upper and lower surfaces of the substrate S1. Sprayed on cotton is good. When the substrate S1 is cooled to some extent, the first gate 410a is opened and the substrate S1 is taken out to the outside. Then, the substrate S3 for depositing the graphene thin film is transferred into the first auxiliary chamber 200a. It introduces (FIG. 9 (d)). After the first gate 410a is closed, the inside of the first auxiliary chamber 200a is purged.

Next, when a graphene thin film having a desired thickness is deposited on the substrate S2, the second valve 420b is opened and the substrate S2 is frozen into the second auxiliary chamber 300b by using the substrate transfer device 300b. After loading, the second valve 420b is closed. When the substrate S2 is unloaded into the second auxiliary chamber 200b, the first valve 420a is opened and the substrate S3 in the first auxiliary chamber 200a is transferred to the process chamber using the substrate transfer device 300a. After loading between the susceptors 110 in the 100, the first valve 420a is closed and a graphene thin film is deposited on the substrate S3 (FIG. 9E).

The substrate S2 unloaded into the second auxiliary chamber 200b has the same method as when the substrate S1 is cooled, and when the substrate S2 is cooled, the second gate 410b is opened and then taken out. After that, the substrate S4 is introduced into the second auxiliary chamber 200b (FIG. 9F). Thereafter, the second gate 410b is closed and the inside of the second auxiliary chamber 200b is purged.

By repeating the above process, the graphene thin film may be deposited by continuously loading the substrate in the process chamber 100, thereby improving productivity. And since the cooling of the substrate is performed in the auxiliary chamber, it is not necessary to lower the temperature inside the process chamber 100 to cool the substrate, so that the inside of the process chamber, that is, the susceptor 110 and the substrate are heated again to the process temperature for thin film deposition. Because it does not have to do so, it can effectively reduce the time or power required to increase the temperature.

In the above, an example in which the loading and unloading of the substrate are performed together in the first auxiliary chamber and the second auxiliary chamber has been described, but any one of the first auxiliary chamber and the second auxiliary chamber performs only the loading of the substrate, May only perform unloading of the substrate.

10 is a view sequentially showing a substrate processing process according to a second embodiment of the present invention.

According to FIG. 10, the first auxiliary chamber 200a loads a substrate introduced from the outside into the process chamber, and the second auxiliary chamber 200b unloads and cools the substrate on which the thin film is deposited in the process chamber 100a. Then take it outside. In this case, as shown in FIG. 10, the substrates may be introduced one by one into the first auxiliary chamber 200a. However, in consideration of process efficiency, a plurality of substrates may be introduced at a time. In this embodiment, the effect of the loading and unloading of the substrate is performed in one direction except for the same.

As described above, according to the exemplary embodiments of the present invention, the thin film deposition may be continuously performed in the process chamber by performing the deposition of the thin film and the cooling of the substrate in separate spaces. This can not only improve process efficiency, but also improve productivity.

In addition, the rapid thermal processing (RTP) method can be applied to heat the substrate contained in the process chamber to generate a large amount of graphene. As a result, it is possible to commercialize graphene having many advantages in electrical, mechanical, and chemical terms.

In particular, it comprises a process chamber and a heat source for irradiating radiant light, heats the susceptor primarily by the heating action of the heat source, and then secondarily the substrate by heat transfer (ie, radiation or conduction) of the heated susceptor. As it is heated, the graphene thin film can be easily deposited.

Although the present invention has been described with reference to the accompanying drawings and the preferred embodiments described above, the present invention is not limited thereto but is limited by the following claims. Accordingly, those skilled in the art will appreciate that various modifications and changes may be made thereto without departing from the spirit of the following claims.

S: substrate
100, 100a: process chamber 101: lead
102: body 104: first gas inlet
105: first gas outlet 107: fixed groove
110: susceptor 120: heat source unit
122: heat source 124: window
126: reflecting film 130: sealing member
200a, 200b, 200c: auxiliary chamber 210a, 210b: second gas inlet
212a, 212b: second gas outlet 300a, 300b: substrate transfer device
410a, 410b: gate 420a, 420b: valve

Claims (16)

An internal space in which the substrate is processed is formed, and a pair of susceptors for mounting the substrate are provided in parallel with each other, and at least one surface of the substrate is disposed in parallel with the susceptor to heat the susceptor. A process chamber comprising a heat source unit;
And an auxiliary chamber connected to both sides of the process chamber,
The process chamber and the auxiliary chamber
A gas inlet for injecting gas into the inside,
A substrate processing apparatus each having a gas discharge port for discharging the gas inside. delete The method according to claim 1,
And a liner formed on inner walls of the process chamber and the auxiliary chamber. The method according to claim 1,
The susceptor is provided with at least one temperature measuring unit. The method according to claim 1,
The susceptor is graphite or silicon carbide (SiC) coated graphite, silicon carbide, silicon nitride, alumina (Al ₂ O ₃ ), aluminum nitride and quartz (Quartz) A substrate processing apparatus formed with at least one of). The method according to claim 1,
The auxiliary chamber is provided with a gate that can be opened and closed, the substrate processing apparatus is provided with a valve separating the process chamber and the auxiliary chamber at the connection portion of the process chamber and the auxiliary chamber. delete delete delete delete delete delete delete delete delete delete

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