JP2007266595A - Plasma treatment apparatus and substrate heating mechanism used therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and substrate heating mechanism, capable of heating a substrate to be treated stably to a high temperature of 800°C or higher, while suppressing pollution by particles and a contamination. <P>SOLUTION: This microwave plasma treatment apparatus comprises a substrate-placing stand 7, a support 8 and a support fixer 24. The substrate-placing stand 7 holds a heating conductor 74 built in. The heating conductor 74 and an electrode 32 comprise a material containing SiC. The electrode 32 is fixed at the support fixer 24 and penetrates the support 8, and the top of the electrode 32 is connected to the heating conductor 74. An electrode-coating tube 43, comprising an insulating material containing quartz coats a part other than the top of the electrode 32, is provided penetrating the lower part of the heating conductor 74 of the substrate placing stand 7, the support 8 and the support fixer 24. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a plasma processing apparatus for plasma processing a substrate to be processed such as a semiconductor substrate and a substrate heating mechanism used therefor.

  As a plasma processing apparatus used for manufacturing a semiconductor device, a liquid crystal display device, and the like, various types of plasma excitation methods are used. For example, a high frequency excitation plasma processing apparatus using RF (Radio Frequency) of 13.56 MHz, 2 A microwave plasma processing apparatus using a .45 GHz microwave is generally used. Compared with the high-frequency excitation plasma processing apparatus, the microwave plasma processing apparatus can obtain a high-density plasma, and the ion energy in the plasma is small. Therefore, damage to the components in the processing apparatus and the substrate to be processed is small, and contamination is present. There is an advantage that there are few.

  Because of such advantages, application of this microwave plasma processing apparatus to the processing of large-diameter semiconductor substrates, glass substrates for LCDs, and the like has been studied. As such a microwave plasma processing apparatus, the one disclosed in Patent Document 1 is known.

  FIG. 15 is a cross-sectional view showing such a microwave plasma processing apparatus disclosed in Patent Document 1. In FIG. The microwave plasma processing apparatus includes an upper processing container 201 and a lower processing container 202 that form a processing space 201A, a substrate placement unit 203 that is provided in the processing space 201A and holds a substrate W to be processed, and an upper processing container. A microwave transmission plate 204 that seals the opening of 201 and a radial line slot antenna 210 coupled to the microwave transmission plate 204 are provided. An exhaust pipe 202A is provided so as to surround the support cylinder 208 of the substrate platform 203. By connecting an exhaust mechanism (not shown) to the exhaust pipe 202A, the processing space 201A is exhausted. It is configured. In order to uniformly evacuate the processing space 201 </ b> A, a current plate 205 having a large number of openings is formed on the outer peripheral side of the substrate platform 203.

The upper processing vessel 201 is made of Al, and an aluminum fluoride layer 207 is formed on the inner wall by fluorination treatment. The substrate mounting portion 203 is made of Al, and a quartz cover 206 is formed on a side surface of the substrate mounting portion 203 and a surface exposed when the substrate to be processed W is mounted. Oxygen radicals formed by high-density plasma are processed by the processing. It is said that consumption on the inner wall surface of the container 201 and the exposed surface of the substrate platform 203 can be suppressed.
JP 2003-133298 A

  When a film is formed on a semiconductor substrate or the like using the microwave plasma processing apparatus as described above, the film quality is good and the obtained semiconductor device has good characteristics such that the leakage current is very small. However, for this purpose, the processing temperature needs to be 700 ° C. or higher. However, in the case where the substrate platform 203 has an AlN heater, there is a limit that the heater itself can be raised to 700 ° C., and the temperature of the substrate W to be processed cannot be raised to 700 ° C. or higher. Among the stainless steel heaters, there is a heater that can be heated up to 800 ° C. However, when a stainless steel heater is used, heavy metals such as Fe and Cr contained in the stainless steel constituting the heater are caused by plasma. There is a problem that contamination occurs due to diffusion into the processing container 201 by sputtering or heat. In addition, although a carbon heater can cope with a high temperature, when the carbon heater is used, when the substrate placement unit 203 is exposed to microwaves, the carbon itself is abnormally discharged and destroyed. There is a problem. The lamp heater cannot be used in the microwave for the same reason.

  Any of the above heaters may be used by shielding microwaves, but there is no shielding material and shielding technology that can withstand a temperature of 800 ° C. and does not cause contamination.

  As described above, there is a demand for a high-temperature heater that does not cause stable contamination when processing is performed at a high temperature using plasma using microwaves and other plasmas.

The present invention has been made in view of such circumstances, and provides a plasma processing apparatus capable of stably heating a substrate to be processed at a high temperature of 800 ° C. or higher while suppressing contamination due to particles and contamination. For the purpose.
It is another object of the present invention to provide a substrate heating mechanism used in such a plasma processing apparatus.

  A plasma processing apparatus according to a first aspect of the present invention includes a chamber that accommodates a substrate to be processed, a plasma generation mechanism that generates plasma in the chamber, a processing gas supply mechanism that supplies a processing gas into the chamber, and a chamber. A substrate mounting table that is provided in series and has an exhaust mechanism for exhausting the chamber; a substrate mounting table on which a substrate to be processed is mounted; and a heating table that heats the substrate provided inside the body; A support part for supporting the substrate mounting table; a fixing part for fixing the support part to the chamber; and an electrode for supplying electric power to the heating element. The heating element and the electrode include a material containing SiC. The electrode is fixed to the fixing portion, penetrates the support portion, and the tip portion is connected to the heating element, covering a portion other than the tip portion of the electrode, Lower portion of the heating element of the serial substrate table, the support portion, and the provided so as to penetrate through the fixing unit, and further comprising an electrode cladding made of an insulating material containing quartz.

  The plasma processing apparatus according to a second aspect of the present invention is the plasma processing apparatus according to the first aspect, wherein the plasma generation mechanism includes a microwave generation mechanism that generates a microwave and a guide that guides the microwave generated by the microwave generation mechanism toward the chamber. It has a wave mechanism and an antenna having a plurality of slots for radiating a microwave guided by the waveguide mechanism into the chamber, and microwave plasma is formed in the chamber.

  The plasma processing apparatus according to a third aspect of the present invention is the plasma processing apparatus according to the first or second aspect, wherein the mounting table main body includes a base portion that supports the heating element, a cover that covers the heating element, and on which the substrate to be processed is placed. It is characterized by having.

  In the plasma processing apparatus according to a fourth aspect of the present invention, in any one of the first to third aspects, an insulating plate and a conductive plate are provided on a lower surface of the fixed portion, and a lower end portion of the electrode protrudes from a bottom surface of the fixed portion. The lower end portion penetrates the insulating plate and the conductive plate, is fixed to the fixing portion by the insulating plate and the conductive plate, and a sealing member is interposed between the upper portion of the conductive plate, and the conductive plate Is connected to a power supply wiring for supplying power to the electrode.

  According to a fifth aspect of the present invention, there is provided the plasma processing apparatus according to the fourth aspect, wherein the conductive plate includes a first conductive plate provided immediately below the insulating plate and a second conductive plate provided thereunder. The power supply wiring is connected to the second conductive plate.

  The plasma processing apparatus according to a sixth aspect of the present invention is the plasma processing apparatus according to any one of the first to fifth aspects, wherein the electrode cladding tube has a larger diameter than other portions from a midway portion to a bottom portion that penetrates the fixing portion. The fixed portion has a small hole and a large hole that pass through the electrode cladding tube in conformity with the shape of the electrode cladding tube, and the large diameter portion includes an upper portion of the large hole and The lower portion is sealed with a sealing member.

  A plasma processing apparatus according to a seventh aspect of the present invention is the plasma processing apparatus according to any one of the first to sixth aspects, comprising: a thermocouple made of a material containing SiC; and a thermocouple clad tube made of a material containing quartz and covering the thermocouple. Further, the lower end of the fixed part is provided with a projecting part projecting downward, and the thermocouple-coated tube is a part below the heating element of the substrate mounting table in a state of covering the thermocouple. The cover portion made of a ceramic material is fitted to the lower end portion of the projecting portion with the lower end projecting from the projecting portion and penetrating the support portion and the fixed portion. .

  A plasma processing apparatus according to an eighth invention is the reflector according to any one of the first to seventh inventions, wherein the substrate mounting table is made of a material containing Si or a material containing SiC, and reflects heat generated from the heating element. It is characterized by having.

  The plasma processing apparatus according to a ninth invention is the plasma processing apparatus according to any one of the first to eighth inventions, wherein at least a portion exposed to the plasma is made of a material containing quartz, a material containing Si, or a material containing SiC, or It is covered with a liner containing quartz.

  A plasma processing apparatus according to a tenth aspect of the present invention is characterized in that, in any one of the first to ninth aspects, a portion that receives radiant heat from the heating element is water-cooled.

  According to an eleventh aspect of the present invention, there is provided the plasma processing apparatus according to any one of the first to tenth aspects, wherein a quartz baffle plate is disposed between the chamber and the exhaust pipe.

  A plasma processing apparatus according to a twelfth aspect of the present invention is characterized in that, in any one of the second to eleventh aspects, the antenna is gold-plated or silver-plated on a copper body.

  A substrate heating mechanism according to a thirteenth aspect of the present invention is a substrate heating mechanism for heating a substrate to be processed in the chamber in a plasma processing apparatus for performing plasma processing on the substrate to be processed in the chamber. A substrate mounting table having a heating element for heating the substrate provided on the substrate, a support unit for supporting the substrate mounting table, a fixing unit for fixing the support unit to the chamber, and supplying power to the heating element The heating element and the electrode are made of a material containing SiC, the electrode is fixed to the fixing part, penetrates the support part, and a tip part is connected to the heating element. And an insulating material containing quartz, which covers a portion other than the tip portion of the electrode, and is provided so as to penetrate a lower portion of the heating element, the support portion, and the fixing portion of the substrate platform. Kara And further comprising an electrode cladding.

  According to a fourteenth aspect of the present invention, in the thirteenth aspect, the mounting base body includes a base portion that supports the heating element, and a cover that covers the heating element and on which the substrate to be processed is placed. It is characterized by.

  A substrate heating mechanism according to a fifteenth aspect of the present invention is the substrate heating mechanism according to the thirteenth or fourteenth aspect, wherein an insulating plate and a conductive plate are provided on a lower surface of the fixed portion, and a lower end portion of the electrode protrudes from a bottom surface of the fixed portion. The portion penetrates the insulating plate and the conductive plate, is fixed to the fixing portion by the insulating plate and the conductive plate, and a sealing member is interposed between the conductive plate and the upper portion of the conductive plate. It is connected to a power supply wiring for supplying power to the electrode.

  The substrate heating mechanism according to a sixteenth aspect of the invention is the fifteenth aspect, wherein the conductive plate has a first conductive plate provided immediately below the insulating plate and a second conductive plate provided thereunder. The power supply wiring is connected to the second conductive plate.

  The substrate heating mechanism according to a seventeenth aspect of the present invention is the substrate heating mechanism according to any one of the thirteenth to sixteenth aspects of the present invention, wherein the electrode cladding tube has a larger diameter than other portions from a midway portion to a bottom portion that penetrates the fixed portion. The fixing portion has a small hole and a large hole that pass through the electrode cladding tube in accordance with the shape of the electrode cladding tube, and the large diameter portion includes an upper portion and a lower portion of the large hole. And is sealed with a sealing member.

  A substrate heating mechanism according to an eighteenth aspect of the present invention is the substrate heating mechanism according to any one of the thirteenth to seventeenth aspects of the present invention, comprising: a thermocouple made of a material containing SiC; and a thermocouple clad tube made of a material containing quartz and covering the thermocouple. Further, the lower end of the fixed part is provided with a projecting part projecting downward, and the thermocouple-coated tube is a part below the heating element of the substrate mounting table in a state of covering the thermocouple. The cover portion made of a ceramic material is fitted to the lower end portion of the projecting portion with the lower end projecting from the projecting portion and penetrating the support portion and the fixed portion. .

  A substrate heating mechanism according to a nineteenth aspect of the present invention is the reflector according to any one of the thirteenth to eighteenth aspects, wherein the substrate mounting table is made of a material containing Si or a material containing SiC and reflects heat generated from the heating element. It is characterized by having.

  According to the present invention, by using SiC as the heating element and the electrode, the temperature of the substrate to be processed can be increased to 800 ° C. or higher, and the plasma processing at a desired high temperature can be performed on the substrate to be processed. . Therefore, a film having good characteristics can be formed. Further, it can be used without being damaged even in a microwave, and contamination due to particles and contamination does not occur.

  Furthermore, since the electrode for supplying power to the heating element is housed in an electrode cladding tube formed of an insulating material containing quartz, it has excellent insulation properties and is prevented from being discharged in the support portion or the fixed portion. Generation | occurrence | production of the contamination derived from an electrode is suppressed.

Embodiments of the present invention will be specifically described below with reference to the accompanying drawings.
FIG. 1 is a schematic cross-sectional view showing a microwave plasma processing apparatus according to an embodiment of the present invention. In the figure, reference numeral 1 denotes a microwave plasma processing apparatus.

  The microwave plasma processing apparatus 1 is hermetically configured and includes a chamber 2 that is substantially cylindrical. The chamber 2 is made of a metal such as Al and is formed in a substantially cylindrical shape. The central portion of the bottom portion of the chamber 2 is open, and the exhaust pipe 3 is connected to the bottom portion. The exhaust pipe 3 includes an upper exhaust pipe 3a having the same diameter as the opened portion, a tapered portion 3b having a small diameter on the lower side, and a lower exhaust connected to the tapered portion 3b via a flow path adjustment valve 4. And a tube 3c. A vacuum pump 5 is connected to the lower end of the lower exhaust pipe 3 c, and an exhaust pipe 6 is connected to the side of the vacuum pump 5. By operating the vacuum pump 5, the atmosphere in the chamber 2 flows through the exhaust pipe 3 and is discharged to the outside, and the inside of the chamber 2 is decompressed to a required degree of vacuum.

  In the central part of the chamber 2, a substrate mounting table 7 that holds a semiconductor wafer W as a substrate to be processed horizontally is provided. The substrate platform 7 is supported by a quartz support 8 that extends vertically downward from the center of the back surface of the substrate platform 7 toward the opening of the chamber 2. The substrate mounting table 7 incorporates a heating element 74 made of SiC, an electrode 32 made of SiC, and a thermocouple 31, which will be described later, and heat rays (infrared, far-infrared) are supplied to the heating element 74. And the semiconductor wafer W is directly heated. A detailed configuration of the substrate mounting table 7 will be described later.

  An annular quartz baffle plate 40 is provided on the outer peripheral side of the substrate mounting table 7. The quartz material constituting the baffle plate 40 is preferably a high-purity material that does not contain impurities, and synthetic quartz is preferred from such a viewpoint. Further, opaque quartz is more preferable. The baffle plate 40 has a plurality of exhaust holes and is supported by a support member. Thereby, the inside of the chamber 2 is uniformly evacuated, and the contamination is prevented from flowing back from below by the microwave plasma generated in the chamber 2.

A lifter driving mechanism 9 is disposed below the substrate mounting table 7. The substrate mounting table 7 is provided with three pin insertion holes penetrating in the vertical direction (only two are shown in FIG. 2). The two pin insertion holes are formed, for example, on a lifter arm 91 and a lifter arm 92 made of quartz. The supported pins 93 and 94 made of quartz, for example, are loosely fitted so as to be swingable up and down. The material of the lifter arms 91 and 92 and the pins 93 and 94 may be ceramics such as Al ₂ O ₃ and AlN, but quartz is preferable in consideration of contamination. The lifter arm 91 and the lifter arm 92 are configured to be movable up and down by elevating shafts 96 and 96 penetrating the bottom of the chamber 2 so as to be movable up and down. The semiconductor wafer W can be moved up and down by moving up and down.

Inside the chamber 2, a liner 10 made of an opaque quartz is provided along the inner peripheral surface of the chamber 2. The quartz composing the liner 10 is preferably highly pure, which is unlikely to cause contamination, and synthetic quartz is preferred from this viewpoint. The upper part of the chamber 2 is opened, and an annular gas introduction part 11 is placed on the end surface of the opened chamber 2. A large number of gas radiation holes 11a are provided uniformly on the inner peripheral surface of the gas introduction part 11, and are connected to the gas supply mechanism 11b via a pipe 11c. The gas supply mechanism 11 b has, for example, an Ar gas supply source, an O ₂ gas supply source, an H ₂ gas supply source, an N ₂ gas supply source, and other gas supply sources, and these gases are supplied to the gas introduction unit 11. The gas is introduced and uniformly radiated into the chamber 2 from the gas emission holes of the gas introduction part 11. Instead of Ar gas, other rare gases such as Kr, He, Ne, and Xe may be used.

  On the side wall of the chamber 2, a semiconductor wafer W is transferred from the transfer chamber (not shown) adjacent to the microwave plasma processing apparatus 1 into the chamber 2 and transferred from the chamber 2 to the transfer chamber. A mouth 2a is provided. The transfer port 2a is opened and closed by a gate valve 12. A cooling water channel 2b for allowing cooling water to flow in the circumferential direction of the chamber 2 is provided above the transfer port 2a, and a cooling water channel 2c is provided below the transfer port 2a. Cooling water is supplied from the cooling water supply source 50 to the water flow paths 2b and 2c.

On the upper side of the chamber 2, a transmission plate support portion 13 protruding into the chamber 2 is provided. The transmission plate support portion 13 is provided with a plurality of cooling water passages 13a for allowing the cooling water to flow in the circumferential direction, and the cooling water is supplied from the cooling water supply source 50 to these cooling water passages 13a. The For example, two step portions are formed inside the transmission plate support portion 13, and the microwave transmission plate 14 made of a dielectric material such as quartz and transmitting microwaves is the step portion of the transmission plate support portion 13. Is fitted through a seal member 15 such as an O-ring. As the dielectric, ceramics such as Al ₂ O ₃ and AlN are applied.

  A disk-shaped planar antenna 16 is provided above the microwave transmission plate 14 and is grounded to the transmission plate support portion 13. For example, when the planar antenna 16 corresponds to a semiconductor wafer W having a size of 200 mm, the diameter is 300 to 400 mm, the thickness is 0.1 to 10 mm (for example, 1 mm), the surface is made of copper, and the surface is gold or silver plated. The disk shape is made. The planar antenna 16 is provided with a number of microwave radiation holes (slots) 16 a having a predetermined pattern and penetrating in the vertical direction of the planar antenna 16. The microwave radiation hole 16a has a long groove shape in plan view, and corresponds to the wavelength (λg) of the microwave so that the adjacent microwave radiation holes 16a have a T shape on a plurality of concentric circles, for example, It is formed at intervals of λg / 4, λg / 2, and λg. The planar antenna 16 may be square.

  On the upper side of the planar antenna 16, a slow wave plate 17 made of a resin such as quartz, polytetrafluoroethylene, polyimide, or the like, which is slightly smaller in diameter than the planar antenna 16 and has a dielectric constant larger than vacuum, is disposed. Since the wavelength of the microwave becomes longer in vacuum, the wavelength of the microwave is shortened by the slow wave plate 17 so that the plasma is adjusted and efficiently propagated.

  A conductive shield member 18 is provided on the upper side of the transmission plate support 13 so as to cover the upper surface and the side surface of the slow wave plate 17 and the side surface of the planar antenna 16. The shield member 18 has the function of a waveguide that uniformly propagates microwaves in the horizontal direction between the shield member 18 and the planar antenna 16. A space between the transmission plate support portion 13 and the shield member 18 is hermetically sealed by a ring-shaped seal member 19. The shield member 18 is formed with a cooling water passage 18a for allowing the cooling water to flow in the circumferential direction of the shield member 18, and the cooling water is passed from the cooling water supply source 50 to the cooling water passage 18a. The shield member 18, the slow wave plate 17, the planar antenna 16 and the microwave transmission plate 14 are cooled to stably generate plasma and prevent breakage and deformation of these members. The microwave transmission plate 14, the planar antenna 16, the slow wave plate 17, and the shield member 18 are integrally provided in a state of being attached to the transmission plate support portion 13 and constitute a lid 60 that can be opened and closed. At this time, the upper surface of the chamber 2 can be opened.

  An opening is formed at the center of the shield member 18, and the coaxial waveguide 20 is continuously provided at the peripheral edge of the opening. A microwave generator 22 is connected to the end of the coaxial waveguide 20 via a matching unit 21. For example, a microwave having a frequency of 2.45 GHz generated by the microwave generator 22 is propagated to the planar antenna 16 via the coaxial waveguide 20. The microwave frequency may be 8.35 GHz or 1.98 GHz.

  The coaxial waveguide 20 is connected to a cylindrical waveguide 20a which is an outer conductor extending upward from the opening of the shield member 18, and an upper end portion of the cylindrical waveguide 20a via a mode converter 23. And a rectangular coaxial waveguide 20b extending in the direction. The mode converter 23 converts the microwave propagating through the rectangular coaxial waveguide 20b in the TE mode into the TEM mode. An inner conductor 20c is built in the center of the circular waveguide 20a, and the coaxial waveguide 20 is constituted by the circular waveguide 20a. The lower end portion of the inner conductor 20 c is connected to the planar antenna 16 through a hole provided in the center portion of the slow wave plate 17. The microwaves are efficiently propagated in the radial direction uniformly to the planar antenna 16 via the coaxial waveguide 20.

  A bottom portion of the cylindrical support portion 8 that supports the substrate mounting table 7 is fixed to a columnar support portion fixing portion 24 having a flange portion by a clamp 26 via a support plate 25. The support part fixing part 24 is fitted on the upper part of the fixing part attaching part 27. A cooling water flow path 24a for allowing cooling water to flow in the circumferential direction of the support portion fixing portion 24 is provided at a side portion of the support portion fixing portion 24, and cooling water is supplied from the cooling water supply source 50. The support fixing part 24 and the support plate 25 are cooled. The fixed portion mounting portion 27 has a side portion attached to the upper exhaust pipe 3a. The support part fixing part 24, the support plate 25, and the fixing part attaching part 27 are made of a metal material such as Al.

  The fixed portion mounting portion 27 is provided with an opening portion 27b on the side portion on the upper exhaust pipe 3a side. The fixed portion mounting portion 27b is aligned with the hole 28a provided in the upper exhaust pipe 3a. The part 27 is fixed to the upper exhaust pipe 3a. Therefore, the space portion 27c formed in the fixed portion mounting portion 27 communicates with the atmosphere through the opening portion 27b and the hole 28a. In the space portion 27c, wiring of the thermocouple 31 for measuring and controlling the temperature of the substrate mounting table 7, wiring for supplying electric power to the heating element 74, and the like are disposed.

  Each component of the microwave plasma processing apparatus 1, for example, a gas supply mechanism, a cooling water supply mechanism, and a heater temperature control unit is connected to and controlled by a control unit 30 having a CPU via an interface 51. ing. And the process of a microwave plasma processing apparatus is performed under control of the control part 30. FIG.

  FIG. 2 is a cross-sectional view showing the substrate mounting table 7, the support unit 8, and the support unit fixing unit 24. The bottom portion of the support portion 8 is fitted into the clamp 26 and fixed to the support portion fixing portion 24 via the support plate 25 by screws 29 and 29.

FIG. 3 is an exploded perspective view showing the substrate mounting table 7 and the support portion 8. The base portion 71 of the substrate platform 7 has a disc shape, and on the base portion 71, for example, two semi-disc-shaped first reflectors 72 divided into a plurality of materials including Si are provided. Are fitted through a plurality of convex support portions 71e formed on the surface of the base portion 71, and are divided into a plurality of, for example, two semicircular plate-like insulating plates 73. The two heating elements 74 divided into a plurality of pattern zones, for example in the shape of a semi-disk, are sequentially fitted with their surfaces facing each other. One heating element 74 may be provided. A cover 75 is provided so as to cover the upper surface of the heating element 74 and the upper side surfaces of the heating element 74, the first reflector 72, and the insulating plate 73, and the wafer W is placed on the cover 75 to generate heat. It is configured to heat by radiant heat from the body 74. A ring-shaped second reflector 76 made of single-crystal Si or amorphous Si is placed on the cover 75.
The base 71, the insulating plate 73, and the cover 75 are made of, for example, quartz. Further, as the quartz constituting these, opaque quartz is preferable. The cover 75 may be opaque quartz. In addition, quartz having high purity is preferable, and synthetic quartz is preferable.

  The heating element 74 is made of high-resistance SiC. SiC may be a sintered body or a film formed by CVD, PVD, or the like. The sintered body may be formed by powder sintering or may be formed by directly reacting a Si-containing material such as silicic acid gas with a graphite sintered body. Further, SiC may be crystalline or amorphous. Further, it may be a single crystal formed by an appropriate pulling method.

FIG. 4 is a plan view showing the heating element 74. The heating element 74 is divided into four sections in the circumferential direction. For each section, a notch 74b is provided concentrically so that a series of current paths 74a are formed by repeating the folding from the center to the peripheral edge at the boundary of the section. The cut 74b suppresses thermal expansion and contraction due to temperature changes. Since the current path 74 a is formed as described above, the semiconductor wafer W is uniformly heated by the heating element 74.
The current path (pattern) is not particularly limited as long as it can be heated uniformly.

  As shown in FIG. 2, an insertion hole 24 b is provided in the central portion of the support portion fixing portion 24, and an insertion hole 25 a is provided in the central portion of the ring-shaped fixing plate 25 corresponding to this. . Then, an insertion hole 71a, an insertion hole 72a, an insertion hole 73a, and an insertion hole 74c that pass through the base portion 71, the first reflector 72, the insulating plate 73, and the heating element 74 and through which the thermocouple cladding tube 41 is inserted are provided. Yes. Further, on the lower surface of the cover 75, that is, on the back side of the surface on which the semiconductor wafer W is placed, for example, is provided in a pipe shape and penetrates the insertion hole 74c, the insertion hole 73a, and the insertion hole 72a. A storage portion 75a for inserting the distal end portion of the thermocouple cladding tube 41 reaching near the surface is suspended.

  A protrusion 24c is provided at the center of the bottom of the support fixing part 24, and an insertion hole 24b through which the thermocouple cladding 41 is inserted extends to the lower end of the protrusion 24c and is formed therethrough.

The thermocouple cladding 41 is made of, for example, an insulating material such as quartz, and stores therein a thermocouple 31 that detects the temperature of the mounting table 7 and is inserted through the insertion hole 24b and the insertion hole 25a. 8, passes through the insertion hole 71 a, and the distal end portion is accommodated in the accommodating portion 75 a of the cover 75. A cover portion 36 made of an insulating material such as Al ₂ O ₃ is fitted to the bottom of the projecting portion 24c via a washer 39 made of a fluororesin synthetic resin such as polytetrafluoroethylene. The thermocouple 31 is prevented from rotating by two screws 37 penetrating the side portion of the cover portion 36, and is connected to the outside from the cover portion 36 via a lid portion 38.

  A plurality of, for example, four, electrode cladding tubes (electrode housing tubes) 43 that are covered with a rod-shaped electrode 32 that supplies power to the cooling water flow path 24 a and the heating element 24 are inserted in the radially outward direction of the support fixing portion 24. An insertion hole 24d is provided therethrough. The insertion hole 24d has an insertion hole 24e provided facing the support plate 25 side of the support portion fixing portion 24, and an insertion hole 24f having an outer diameter larger than that of the insertion hole 24e. The support plate 25 is provided with an insertion hole 25b for inserting the electrode cladding tube 43 at a position corresponding to the insertion hole 24e. The base 71, the first reflector 72, and the insulating plate 73 are also provided with insertion holes 71b, insertion holes 72b, and insertion holes 73b through which the electrode cladding tubes 43 are inserted so as to correspond to the insertion holes 24b, 25b, respectively. Yes. The heating element 74 is provided with an insertion hole 74d, and the cover 75 is provided with a storage hole 75b for storing the protruding electrode 32 and set screw 79.

  The electrode 32 is preferably made of SiC, may be a sintered body, may be a single crystal material, or may be amorphous. The electrode 32 is housed in an electrode cladding tube 43 made of an insulating material such as quartz, passes through the support portion fixing portion 24 and the support plate 25, passes through the space portion in the support portion 8, and enters the base portion 71 and It penetrates the first reflector 72. The tip of the electrode 32 passes through the insulating plate 73, is fixed to the heating element 74 with a set screw 79, and is accommodated in the accommodation hole 75 b of the cover 75. The electrode cladding tube 43 has a step shape of a large diameter portion 43g fitted into the insertion hole 24f and a small diameter portion 43h fitted into the insertion holes 24e and 25b. An O-ring (seal ring) 42 is fitted and sealed to the upper and lower outer peripheral portions of the large-diameter portion 43g. In this way, the electrode 32 is housed in the electrode cladding tube (electrode housing tube) 43 formed of an insulating material such as quartz from the bottom of the support fixing portion 24 to the insulating plate 73, and the O-ring 42. Since it is sealed and the airtightness is good, the occurrence of contamination derived from the electrode is suppressed. In addition, the electrode 32 is covered with an electrode cladding tube 43 with good electrical insulation, the electrode cladding tube 43 is fitted into the insertion hole 24f, and the small diameter portion 43g is fitted into the insertion holes 24e and 25b. Since it has a structure having a stepped shape with respect to the portion 43h and the portion that penetrates the fixing portion of the electrode cladding tube 43 is thick, the electrical insulation is good. Furthermore, such a step shape stabilizes the fixing of the electrode cladding tube 43.

A fixing plate 33 made of an insulator such as Al ₂ O ₃ or AlN is provided below the support fixing portion 24. A first metal plate 34 and a second metal plate 35 are screwed to the lower side of the fixed plate 33. The fixing plate 33 is provided with an insertion hole 33a for inserting the electrode 32 and an insertion hole 33b for inserting the protruding portion 24c. The fixing plate 33 is fixed in a state where the protruding portion 24c is fitted in the insertion hole 33b. Yes. The fixing plate 33 has a function of electrically insulating the support portion fixing portion 24 and the first metal plate 34. The first and second metal plates 34 and 35 are formed with insertion holes 34a and 35a through which the electrode 32 is inserted.

  The lower end portion of the electrode 32 passes through the insertion hole 33 b of the insulating fixing plate 33 and the insertion holes 34 a and 35 a of the first metal plate 34 and the second metal plate 35. The electrode 32 and the first metal plate 34 are sealed with an O-ring (seal ring) 34b.

  The electrode 32 is connected to the second metal plate 35, and is supplied with power to the electrode 32 from the power supply source (not shown) via the second metal plate 35, and the heating element 74 passes through the electrode 32. As a result, the heating element 74 generates heat, and the semiconductor wafer W is heated by the radiant heat rays.

  As described above, the first metal plate 34 has a function of hermetically sealing the electrode 32 through the O-ring 34b, and the second metal plate 35 has a function of supplying power to the electrode. Therefore, a metal suitable for these functions is preferable. For example, the first metal plate 34 can be made of stainless steel, and the second metal plate 35 can be made of a Ni alloy. However, the present invention is not limited to these materials, and various materials can be used. The first and second metal plates 34 and 35 may be different metals or the same type of metal. Moreover, these may be united without dividing into these two metal plates.

  Further, a pin insertion hole 71 c that penetrates the base portion 71 in the vertical direction is provided near the periphery of the base portion 71. For example, a pipe-like protrusion 71d is provided on the outer edge of the upper hole of the pin insertion hole 71c, and the first reflector 72 is supported on the upper part of the protrusion 71d. Similarly, the first reflector 72, the insulating plate 73, and the heating element 74 are provided with a pin insertion hole 72c, a pin insertion hole 73c, and a pin insertion hole 74e, respectively. A pin insertion portion 75c that passes through the pin insertion hole 74e, the pin insertion hole 73c, and the pin insertion hole 72c and reaches the inside of the pin insertion hole 71c is suspended from the lower surface of the cover 75. The pin insertion portion 75c is formed with an insertion hole 75e through which the pin 93 can move up and down. The pin insertion part 75c has a function of sealing the contamination from the inside of the substrate mounting table 7, thereby preventing the diffusion of the contamination even when heated to a high temperature, and is free from contamination. It is possible to realize the heating mechanism.

FIG. 5 is a perspective view showing a part of the lifter driving mechanism 9, FIG. 6 is a rear view showing the lifter driving mechanism 9, and FIG. 7 is a side view showing a part of the lifter driving mechanism 9.
The lifter arm 91 of the lifter driving mechanism 9 is formed so that the tip end direction extends to the outer peripheral side from the central axis, and is longer than the lifter arm 92. Similarly, the lifter arm 92 also has a distal end extending from the central axis to the outer peripheral side. The pins 93 and 95 of the lifter arm 91 and the pins 94 of the lifter arm 92 are provided at an interval of 120 degrees in the circumferential direction.

  A pin support portion 102 including an upper fixing portion 102a, a loose fitting portion 102b, and a screwing portion 102c is fitted into a through hole 91a provided in the lifter arm 91 (see FIG. 2). The upper fixing portion 102a has a larger diameter than the loose fitting portion 102b, and the lower end portion of the pin 93 is screwed into the loose fitting portion 102b while passing through the upper fixing portion 102a. The loose fitting portion 102 b is loosely fitted into the through hole 91 a, and the upper fixing portion 102 a is in contact with the upper surface of the lifter arm 91. A male screw is provided on the outer peripheral surface of the screwing portion 102c, and the screwing portion 102c projects from the through hole 91a. The lower fixing portion 103 is provided with a female screw on the inner peripheral surface, and is in contact with the lower surface of the lifter arm 91 while being screwed into the screwing portion 102 c of the pin support portion 102.

  Since the pin support portion 102 is loosely fitted in the through hole 91a, the pin 93 is inserted into the pin hole of the substrate mounting table 7 with good alignment. Similarly, the pin support portions into which the other pins 94 and 95 are screwed are loosely fitted into the through holes provided in the lifter arm 92 and the lifter arm 91, and the pins 94 and 95 are inserted into the pin holes of the substrate mounting table 7. It is inserted.

  The lifter arm 91 and the lifter arm 92 are connected to the elevating shaft 96 through corresponding connecting portions 97. The connecting portion 97 includes two connecting plates 97a, a connecting plate 97b and a stop plate 97c, a cover 97d, a plurality of screws 97e, a screw 97f, and a screw 97g. The lifter arms 91 and 92 are respectively screwed to the connecting plate 97a by screws 97f via a stop plate 97c. A connecting plate 97b is connected to the lower side of the end of each connecting plate 97a. Each screw 97e is screwed to the lifting shaft 96 in a state of passing through the connecting plate 97a and the connecting plate 97b.

  The cover 97d covers the back of the connecting plate 97a and is screwed to the connecting plate 97a with screws 97g in a state where both ends are fitted in the recesses 97h of the connecting plate 97a when the two connecting plates 97a are attached. It is comprised so that.

  The lifter drive mechanism 9 removes the cover 97d and loosens the screw 97e, so that the connecting plate 97a to which the lifter arm 91 is connected or the connecting plate 97a to which the lifter arm 92 is connected rotates relative to the lifting shaft 96. The lifter arms 91 and 92 are configured to open left and right. Thereby, the maintenance of the substrate mounting table 7 becomes easy.

  The lift unit 110 of the lifter drive mechanism 9 includes a shaft holder 111, a support unit 112, a support unit 113, a support column 114, a linear slide rail 115, a motor 116, a pulley 117, a ball screw 118, a support unit 119, and a mounting table 122.

  The shaft holder 111, the support part 112, and the support part 113 are connected, and the support part 119 is connected to a support part 113 a fitted inside the support part 113. The linear slide rail 115 is provided in the vertical direction of the column portion 114, and a concave groove portion provided in the vertical direction of the support portion 113 is fitted in the linear slide rail 115. The support column 114 is mounted on a mounting table 122 on the motor 116. A recess 114 a is provided in the lower portion of the support column 114, and the rotation of the motor 116 is transmitted to the pulley 117 in the recess 114 a. The elevating shaft 96 passes through the connecting plate 98 and is inserted into the metal bellows-shaped bellows 99 and is held by the shaft holder 111.

  When the motor 116 is driven and the ball screw 118 is rotated by the motor 116 via the pulley 117, the support portion 119 is moved up and down accordingly, and the support portion 113, the support portion 112 and the shaft holder connected thereto are interlocked with this. 111 is configured to slide up and down along the linear slide rail 115. Thereby, the raising / lowering shaft 96 moves up and down and the lifter arms 91 and 92 move up and down while the airtightness in the chamber 2 is maintained by the bellows 99.

  Further, by turning the screw 120, the positions of the lifting shaft 96 and the lifter arms 91 and 92 connected thereto are finely adjusted in the y-axis direction. The position of the lift shaft 96 and the lifter arms 91 and 92 connected thereto is finely adjusted in the x-axis direction by turning a screw 121 passing through the lower surfaces of the shaft holders 111 and 112. .

In the microwave plasma processing apparatus 1 configured as described above, Ar and O _2, for example, are introduced from the gas introduction unit 11, and the planar antenna 16 is driven by microwaves having a predetermined frequency, so that the inside of the chamber 2 is obtained. A high density plasma is formed. The excited Ar gas plasma acts on oxygen molecules, oxygen radicals are efficiently and uniformly formed in the chamber 2, and the surface of the semiconductor wafer W placed on the substrate platform 7 is oxidized. Further, when the semiconductor wafer W is nitrided, a rare gas such as Ar and NH ₃ or N ₂ is introduced into the chamber 2 from the gas introduction unit 11 and is nitrided. Further, the O ₂ gas can be further introduced into the gas used for the nitriding treatment to oxynitride the semiconductor wafer W. Further, a film forming process can be performed using a film forming gas.

  In the present embodiment, since the heating element 74 of the substrate mounting table 7 is made of SiC, the temperature of the semiconductor wafer can be set to 800 ° C. or higher, and the semiconductor wafer W can be heat-treated at a sufficient temperature. . Further, since the substrate mounting table 7 having a heating function has a structure in which the contamination from the inside does not diffuse when the high temperature plasma treatment is performed, the plasma treatment in a clean atmosphere is possible.

  Therefore, a film having good film quality can be formed, and as a result, a semiconductor device having good characteristics can be obtained. Further, since the insulating property of the substrate mounting table 7 is reinforced, the generation of plasma inside the substrate mounting table 7 is suppressed, the heating element 74 can be used without being damaged, and even when used at a high temperature, By using a high-purity material, diffusion of contamination due to thermal diffusion is suppressed.

  Further, in the present embodiment, since the substrate mounting table 7 includes the first reflector 72 and the second reflector 76 that contain Si that reflects the heat generated from the heating element 74, the heat generated by the heating element 74. Thus, the semiconductor wafer W can be efficiently heated. With this configuration, the temperature of the semiconductor wafer W can be set to 800 ° C. or higher while suppressing the amount of heat generated by the heating element 74. In addition, the microwaves are reflected and the plasma is easily excited. In addition, as a material containing Si which comprises the 1st and 2nd reflectors 72 and 76, single crystal Si, amorphous Si, polysilicon, SiN can be mentioned, It is preferable to use these high purity goods.

  In this way, by performing the high temperature processing with the microwave plasma processing apparatus 1, stable plasma generation and plasma processing with extremely little contamination can be realized.

FIG. 8 shows a processing temperature of 400.degree. C., 600.degree. C., and 800.degree. C. on a semiconductor wafer having a size of 300 mm using the microwave plasma processing apparatus 1 according to the present invention provided with a substrate mounting table 7 provided with a SiC heater. 5 is a graph showing the relationship between the temperature and the in-plane thermal uniformity of the semiconductor wafer when the temperature is changed. The horizontal axis is the processing temperature (° C.), the vertical axis is the difference (Δt) between the highest temperature and the lowest temperature in the semiconductor wafer, and the unit is ° C. The chamber internal pressure (degree of vacuum) was 126 Pa (0.95 Torr) in all cases.
As shown in FIG. 8, when the microwave plasma processing apparatus 1 equipped with the SiC heater is used, Δt is around 17 ° C. even at 800 ° C., and Δt, which is the allowable temperature uniformity of the semiconductor wafer, satisfies 20 ° C. or less. It can be seen that good temperature uniformity can be obtained on the high temperature side.

FIG. 9 shows an example in which a microwave plasma processing apparatus 1 equipped with a SiC heater of the present invention is used to oxidize a 300 mm semiconductor wafer at 400 ° C., 600 ° C., 700 ° C., and 800 ° C. at different processing temperatures. 6 is a graph showing the relationship between the processing time and the SiO ₂ film thickness when a SiO ₂ film is formed. The vertical axis represents the film thickness (nm), and the horizontal axis represents the processing time (sec).
The processing conditions are: Ar gas flow rate: 2000 mL / min (sccm), O ₂ gas flow rate: 10 mL / min (sccm), microwave power Pu: 2000 W, chamber pressure (vacuum) 66.5 Pa (500 mT), base wafer : DHF-Last.

  FIG. 9 shows that the film formation rate increases as the temperature increases. In particular, it can be seen that when the treatment is performed at 700 ° C. or higher, the film formation rate increases rapidly, and good results are obtained. Specifically, a film formation rate of 1.6 times or more with respect to the rate at 400 ° C. and 1.35 times or more with respect to the rate at 600 ° C. can be obtained.

FIG. 10 shows the processing time when the SiO ₂ film is formed by changing the processing temperature to 400 ° C., 600 ° C., 700 ° C., and 800 ° C. and the in-plane of the semiconductor wafer of the SiO ₂ film, as in the processing of FIG. It is the graph which showed the relationship with film thickness uniformity. The vertical axis represents the in-plane film thickness uniformity. The in-plane film thickness uniformity is expressed by (maximum value−minimum value) / average value (σ / Ave) of the film thickness in the wafer, and the unit is%. It is. The horizontal axis is the processing time (sec).

  As can be seen from FIG. 10, when the microwave plasma processing apparatus 1 of the present embodiment is used, the in-plane film thickness uniformity is within 2%, and even high-temperature processing is satisfactory. Thereby, it was confirmed that the heater structure of the present invention is excellent.

11, similarly to the processing in FIG. 9, 700 ° C., and 800 ° C. and the film thickness uniformity in the plane of the semiconductor wafer processing time and the SiO ₂ film in the case of forming the SiO ₂ film by changing the treatment temperature It is the graph which showed the relationship. The vertical axis represents the in-plane film thickness uniformity. The in-plane film thickness uniformity is expressed by (maximum value−minimum value) / average value (σ / Ave) of the film thickness in the wafer, and the unit is%. It is. The film thickness was measured by shortening the processing time from FIG.

  From FIG. 11, when the processing time is within 60 sec, the in-plane film thickness uniformity is within 1.5% at both 700 ° C. and 800 ° C., and the high temperature processing is performed by the heating mechanism having the structure of the present invention. It can be seen that it can be performed well.

FIG. 12 is a graph showing the results of examining the temporal change in the presence or absence of particles on the surface of the semiconductor wafer in the plasma processing chamber. The vertical axis represents the number of particles, and the horizontal axis represents the change over time, indicating the number of measurement of the following particles. The number of particles is measured by placing a dummy wafer on the substrate mounting table 7 in the chamber 2, performing an operation of alternately repeating plasma processing and exhausting 10 times, and then mounting a new semiconductor wafer on the substrate mounting table. And measuring the number of particles on the surface of the semiconductor wafer.
The processing conditions are: Ar gas flow rate: 2000 mL / min (sccm), O ₂ gas flow rate: 10 mL / min (sccm), microwave power Pu: 2000 W, pressure in the chamber (degree of vacuum) 66.5 Pa (500 mT), processing time : 60 sec, treatment temperature: 800 ° C.
From FIG. 12, it can be seen that the generation of particles decreases with time, and good results are obtained by the high temperature treatment by the heating mechanism having the structure of the present invention.

FIG. 13 is a graph showing the results of examining the temporal change in the presence or absence of particles on the back surface of the semiconductor wafer. The vertical axis represents the number of particles, and the horizontal axis represents the change over time, indicating the number of measurement of the following particles. The number of particles was measured in the same manner as in FIG.
From FIG. 13, it can be seen that the generation of particles decreases with time, and good results are obtained by the high temperature treatment by the heating mechanism having the structure of the present invention.

FIG. 14 is a graph showing the change over time of the occurrence of metal contamination in the semiconductor wafer. The vertical axis represents the number of Al, Cu, and Na atoms (10 ¹⁰ × atoms / cm ² ), and the horizontal axis represents the change over time (number of measurements). The measurement of the number of atoms of Al, Cu and Na is carried out 10 times, similarly to the measurement of particles, by placing a dummy wafer on the substrate mounting table 7 in the chamber 2 and alternately repeating plasma treatment and exhaust. Thereafter, a new semiconductor wafer was placed on the substrate mounting table, and the number of Al, Cu and Na atoms on the surface of the semiconductor wafer was measured.
The processing conditions are: Ar gas flow rate: 2000 mL / min (sccm), O ₂ gas flow rate: 10 mL / min (sccm), microwave power Pu: 2000 W, pressure in the chamber (degree of vacuum) 66.5 Pa (500 mT), processing time : 60 sec, treatment temperature: 800 ° C.
In FIG. 14, the first two times are references, and a semiconductor wafer was placed on the substrate platform 7 in the chamber 2 before processing, and the number of atoms of Al, Cu, and Na was measured.
From FIG. 14, it can be seen that in the second measurement, each contamination of Al, Cu, and Na is about the target value of 1 × 10 ¹⁰ . Alkali metals such as Na and alkaline earth metals are atoms that are likely to cause contamination by thermal diffusion. However, in the plasma processing apparatus of the present invention, the chamber is kept clean even when heated to such a high temperature. It can be seen that

  As described above, in the microwave plasma processing apparatus 1 of the present embodiment, since the heating element 74 is made of a material containing SiC, the processing temperature of the substrate to be processed can be set to 800 ° C. or higher, and the substrate to be processed is excellent. Can be processed. Therefore, a semiconductor device having good characteristics can be obtained. And even if it exposes to a microwave, the heat generating body 74 does not carry out abnormal discharge and is damaged, and the impurity of the heat generating body 74 diffuses in a chamber, and a contamination does not generate | occur | produce.

  Further, in the microwave plasma processing apparatus 1 of the present embodiment, the portion exposed to the microwave is made of high-purity quartz, Si or SiC, or is covered with a quartz liner. Occurrence is suppressed.

  In the case where an Al member must be used for the portion exposed to the microwave, it is preferable to cover the substrate with a quartz liner or coating so as to be separated from the substrate mounting table 7 as much as possible. A bolt, screw, or the like, which is insufficient in strength with Al, may be a Ti material having high heat resistance and high purity.

  Further, the microwave plasma processing apparatus 1 of the present embodiment is configured such that the chamber 2, the support portion fixing portion 24, the transmission plate support portion 13, and the lid portion 18 are water-cooled. Therefore, rubbing (particles) due to the expansion of the members and between the members can be suppressed, and the occurrence of contamination and the like can be prevented.

  The microwave plasma processing apparatus 1 according to the present embodiment includes a quartz baffle plate 40 disposed on the outer peripheral side of the substrate mounting table 7 between the chamber 2 and the exhaust pipe 3. Is prevented from leaking into the exhaust pipe 3, and contamination due to the baffle plate 40 does not occur.

  Furthermore, since the lifter arm is divided into two in the microwave plasma processing apparatus 1 of the present embodiment, the lifter arm 91 and the lifter arm 92 are opened to the left and right when the substrate mounting table 7, the support part 8 and the support part fixing part 24 are attached. Can be attached. Further, since the pin support portion 102 is loosely fitted in the through hole 91a, the pin 93 and the like can move in the left-right direction, and maintenance such as alignment is easy.

In the above embodiment, the case where the semiconductor wafer W is processed using the microwave plasma processing apparatus 1 of the present invention has been described. However, the present invention is not limited to this, and a capacitively coupled plasma source is used. The present invention can be applied to a plasma processing apparatus using a plasma source, an ICP type plasma source, a surface reflection type plasma source, or a magnetron type plasma source, and further, a heat treatment apparatus RTP (Rapid Thermal Process), CVD (Chemical Vapor Deposition), PF− It can also be applied to CVD and the like, and can also be applied to the manufacture of liquid crystal display devices.
Moreover, the heat generating body 74 is not limited to what consists of SiC, What is necessary is just to have SiC as a main component. However, a sintered body of SiC is preferable. Further, high-purity SiC is preferable, and SiC of 100% is particularly preferable from the viewpoint of suppressing contamination.

It is typical sectional drawing which shows the microwave plasma processing apparatus which concerns on embodiment of this invention. It is sectional drawing which shows a substrate mounting base, a support part, and a support part fixing | fixed part. It is a disassembled perspective view which shows a substrate mounting base and a support part. It is a top view which shows a heat generating body. It is a perspective view which shows a lifter drive mechanism. It is a rear view which shows a lifter drive mechanism. It is a side view which shows a lifter drive mechanism. It is the graph which showed the relationship between the temperature at the time of changing process temperature to the semiconductor wafer using the microwave plasma processing apparatus provided with the SiC heater of this invention, and the thermal uniformity in the surface of the semiconductor wafer W. Using the microwave plasma processing apparatus equipped with the SiC heater of the present invention, the relationship between the processing time and the SiO ₂ film thickness when a SiO ₂ film is formed by oxidizing the semiconductor wafer at different processing temperatures It is the shown graph. FIG. 10 is a graph showing the relationship between the processing time and the in-plane uniformity of the SiO ₂ film when the SiO ₂ film is formed by changing the processing temperature, as in the process of FIG. FIG. 10 is a graph showing the relationship between the processing time and the in-plane uniformity of the SiO ₂ film when the SiO ₂ film is formed by changing the processing temperature, as in the process of FIG. It is the graph which showed the result of having investigated the time-dependent change of the presence or absence of the particle in the surface of a semiconductor wafer. It is the graph which showed the result of having investigated the time-dependent change of the presence or absence of the particle in the back surface of a semiconductor wafer. It is the graph which showed the time-dependent change of generation | occurrence | production of the contamination of a semiconductor wafer. 1 is a cross-sectional view showing a microwave plasma processing apparatus of Patent Document 1. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Microwave plasma processing apparatus 2 Chamber 2b, 2c Cooling water flow path 3 Exhaust pipe 4 Flow path adjustment valve 5 Vacuum pump 7 Substrate mounting base 71 Base part 72 First reflector 73 Insulating plate 74 Heating element 75 Cover
76 2nd reflector 8 support part 9 lifter drive mechanism 91, 92 lifter arm 93, 94, 95 pin 96 lift shaft 10 liner 13 transmission plate support part 14 microwave transmission plate 16 planar antenna 18 shield member 24 support part fixing part 27 fixing part Mounting portion 30 Control portion 31 Thermocouple 32 Electrode 40 Baffle plate 41 Thermocouple cladding tube 43 Electrode storage tube 51 Interface 60 Lid

Claims (19)

A chamber for accommodating a substrate to be processed;
A plasma generation mechanism for generating plasma in the chamber;
A processing gas supply mechanism for supplying a processing gas into the chamber;
An exhaust mechanism connected to the chamber and exhausting the chamber;
A substrate mounting table on which a substrate to be processed is mounted in the chamber, and a mounting table main body and a heating element for heating the substrate provided in the main body;
A support portion for supporting the substrate mounting table;
A fixing part for fixing the support part to the chamber;
An electrode for supplying power to the heating element,
The heating element and the electrode are made of a material containing SiC,
The electrode is fixed to the fixing part, penetrates the support part, and a tip part is connected to the heating element,
An electrode made of an insulating material containing quartz, which covers a portion other than the tip portion of the electrode and is provided so as to penetrate a lower portion of the heating element, the support portion, and the fixing portion of the substrate mounting table. A plasma processing apparatus further comprising a cladding tube.   The plasma generation mechanism includes a microwave generation mechanism that generates a microwave, a waveguide mechanism that guides the microwave generated by the microwave generation mechanism toward the chamber, and a microwave that is guided by the waveguide mechanism. The plasma processing apparatus according to claim 1, further comprising: an antenna having a plurality of slots that radiates into the chamber, wherein microwave plasma is formed in the chamber.   3. The plasma processing apparatus according to claim 1, wherein the mounting table main body includes a base portion that supports the heating element, and a cover that covers the heating element and on which the substrate to be processed is placed.   An insulating plate and a conductive plate are provided on a lower surface of the fixed portion, a lower end portion of the electrode protrudes from a bottom surface of the fixed portion, and the lower end portion penetrates the insulating plate and the conductive plate, and the insulating plate And a sealing member interposed between the conductive plate and the upper portion of the conductive plate, and the conductive plate is connected to a power supply wiring for supplying power to the electrode. The plasma processing apparatus in any one of thru | or 3.   The conductive plate has a first conductive plate provided immediately below the insulating plate and a second conductive plate provided thereunder, and the power supply wiring is connected to the second conductive plate. The plasma processing apparatus according to claim 4. The electrode cladding tube has a large-diameter portion that is larger in diameter than other portions, from the middle portion to the bottom portion of the portion that penetrates the fixed portion,
The fixed portion has a small hole and a large hole that pass through the electrode cladding tube in conformity with the shape of the electrode cladding tube, and the large diameter portion is a sealing member at an upper portion and a lower portion of the large hole. The plasma processing apparatus according to claim 1, which is sealed. A thermocouple made of a material containing SiC; and a thermocouple cladding tube made of a material containing quartz and covering the thermocouple,
A projecting portion projecting downward is provided at the lower end of the fixed portion,
The thermocouple-clad tube penetrates the lower part of the substrate mounting table, the support part, and the fixed part, and the lower end part protrudes from the projecting part in a state where the thermocouple is coated. The plasma processing apparatus according to any one of claims 1 to 6, wherein a cover portion made of a ceramic material is fitted to a lower end portion of the projecting portion.   The plasma processing apparatus according to claim 1, wherein the substrate mounting table includes a reflector made of a material containing Si or a material containing SiC and reflecting heat generated from the heating element.   9. The method according to claim 1, wherein at least a portion exposed to the plasma is made of a material containing quartz, a material containing Si, or a material containing SiC, or is covered with a liner containing quartz. Plasma processing equipment.   The plasma processing apparatus according to claim 1, wherein a portion that receives radiant heat from the heating element is configured to be water-cooled.   The plasma processing apparatus according to any one of claims 1 to 10, wherein a quartz baffle plate is disposed between the chamber and the exhaust pipe.   The plasma processing apparatus according to claim 2, wherein the antenna is gold-plated or silver-plated on a copper main body. In a plasma processing apparatus for performing plasma processing on a substrate to be processed in a chamber, a substrate heating mechanism for heating the substrate to be processed in the chamber,
A substrate mounting table having a mounting table main body and a heating element for heating the substrate provided in the main body;
A support portion for supporting the substrate mounting table;
A fixing part for fixing the support part to the chamber;
An electrode for supplying power to the heating element,
The heating element and the electrode are made of a material containing SiC,
The electrode is fixed to the fixing part, penetrates the support part, and a tip part is connected to the heating element,
An electrode made of an insulating material containing quartz, which covers a portion other than the tip portion of the electrode and is provided so as to penetrate a lower portion of the heating element, the support portion, and the fixing portion of the substrate mounting table. A substrate heating mechanism further comprising a cladding tube.   14. The substrate heating mechanism according to claim 13, wherein the mounting table main body includes a base portion that supports the heating element, and a cover that covers the heating element and on which the substrate to be processed is placed.   An insulating plate and a conductive plate are provided on a lower surface of the fixed portion, a lower end portion of the electrode protrudes from a bottom surface of the fixed portion, and the lower end portion penetrates the insulating plate and the conductive plate, and the insulating plate And a conductive plate that is fixed to the fixing portion, a sealing member is interposed between the conductive plate and an upper portion of the conductive plate, and the conductive plate is connected to a power supply wiring for supplying power to the electrode. Or the board | substrate heating mechanism of 14.   The conductive plate has a first conductive plate provided immediately below the insulating plate and a second conductive plate provided thereunder, and the power supply wiring is connected to the second conductive plate. The substrate heating mechanism according to claim 15. The electrode cladding tube has a large-diameter portion that is larger in diameter than other portions, from the middle portion to the bottom portion of the portion that penetrates the fixed portion,
The fixed portion has a small hole and a large hole that pass through the electrode cladding tube in conformity with the shape of the electrode cladding tube, and the large diameter portion is a sealing member at an upper portion and a lower portion of the large hole. The substrate heating mechanism according to claim 13, wherein the substrate heating mechanism is sealed. A thermocouple made of a material containing SiC; and a thermocouple cladding tube made of a material containing quartz and covering the thermocouple,
A projecting portion projecting downward is provided at the lower end of the fixed portion,
The thermocouple-clad tube penetrates the lower part of the substrate mounting table, the support part, and the fixed part, and the lower end part protrudes from the projecting part in a state where the thermocouple is coated. The substrate heating mechanism according to claim 13, wherein a cover portion made of a ceramic material is fitted to a lower end portion of the protruding portion in a state.   The substrate heating mechanism according to claim 13, wherein the substrate mounting table is made of a material containing Si or a material containing SiC, and has a reflector that reflects heat generated from the heating element.

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