JP2011198957A - Substrate processing apparatus, substrate holder, and method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, a substrate holder, and a method of manufacturing a semiconductor device improving an in-plane uniformity of a substrate without increasing a dead space.SOLUTION: The substrate processing apparatus includes the substrate holder holding a plurality of substrate 2 and a processing chamber processing the plurality of substrates 2 while holding them with the substrate holder. The substrate holder includes a fixed support 26 and a bottom plate 31 in which a plurality of substrate placing parts configured so that the substrates 2 can be placed thereon and first regulation members 35 regulating a gas flow in one part of a periphery of the substrates 2 placed on the substrate placing parts are arranged with a first gap therebetween in a vertical direction. The substrate holder further includes a movable support 27 and a support holding arm 33 in which second regulating members 36 regulating the gas flow in an other part of the periphery of the substrates 2 placed on the substrate placing parts are arranged with the first gap therebetween in the vertical direction and in which the second regulating members 36 are configured to be able to retract from a first position of regulating the gas flow in the other part of the periphery to a second position of at least partially overlapping on the first regulation members 35 in the vertical direction.

Description

  The present invention relates to a substrate processing apparatus that processes a plurality of substrates held by a substrate holder, a substrate holder, and a method for manufacturing a semiconductor device.

  As a substrate processing apparatus, there is a batch type substrate processing apparatus that processes a plurality of substrates at once. In the batch type substrate processing apparatus, a substrate such as a silicon wafer is supported by a substrate holder (boat), and the boat is in a processing furnace. The wafer is processed while being held by a substrate holder in a processing furnace.

  Usually, a boat has a plurality of pillars, and grooves for holding a substrate are engraved at a predetermined pitch in the pillars, and wafers are loaded into the grooves so that the wafers are held by the boat. Yes. Some boats have a ring with a shape that protrudes outward from the periphery of the wafer between the wafers. The ring regulates the gas flow at the periphery of the wafer and forms a film on the substrate. This improves the in-plane uniformity of the formed film, particularly the uniformity of the peripheral portion of the wafer.

  Further, a part of the ring is movable so as not to get in the way when loading and unloading the wafer.

  For example, Patent Document 1 discloses a holder boat having a ring that is partially movable. However, in the holder boat shown in Patent Document 1, the movable portion turns and moves away from the holder boat body. For this reason, there was a problem that dead space increased.

Japanese Patent Laid-Open No. 10-163297 JP 2003-258063 A

  In view of such circumstances, the present invention provides a substrate processing apparatus, a substrate holder, and a method for manufacturing a semiconductor device that can improve in-plane uniformity of a substrate without increasing dead space.

  The present invention includes a substrate holder that holds a plurality of substrates, and a processing chamber that processes the plurality of substrates while holding the substrates, and the substrate holder is configured to be able to place the substrates. A main body provided with a substrate placing portion and a first regulating member that regulates a gas flow at a part of the periphery of the substrate placed on the substrate placing portion in a plurality of vertical directions; A plurality of second restricting members for restricting the gas flow in the other peripheral portion of the substrate placed on the substrate placing portion are formed in the first gap in the vertical direction, and the second restricting member is provided in the other peripheral portion. The present invention relates to a substrate processing apparatus having a movable part configured to be retractable from a first position for regulating a gas flow to a second position at least partially overlapping with the first regulating member in the vertical direction. .

  Also, the present invention provides a plurality of substrate mounting portions configured to be capable of mounting a substrate, and a plurality of first regulating members that regulate a gas flow at a part of the periphery of the substrate placed on the substrate placing portion. A plurality of second restricting members for restricting the gas flow in the other peripheral portion of the substrate placed on the substrate placing portion in the vertical direction. The second restricting member is configured to be retractable from a first position that restricts the gas flow in the other peripheral portion to a second position that overlaps at least partly in the vertical direction with the first restricting member. The present invention relates to a substrate holder having a movable part.

  According to the present invention, a processing gas is introduced into the processing chamber, and the flow of the processing gas at a part of the peripheral edge of the substrate placed on the substrate mounting portion in the main body portion of the substrate holder is transferred to the main body portion. While restricting by the first restricting member and restricting the flow of the processing gas at the other peripheral part of the substrate placed on the substrate placing part by the second restricting member in the movable part of the substrate holder. And a step of processing the substrate; unloading the substrate holder from the processing chamber; operating the movable portion; and overlapping the second restricting member with the first restricting member in a vertical direction. The present invention relates to a method of manufacturing a semiconductor device having a step of retracting to a matching position and unloading the substrate from the substrate mounting portion.

  According to the present invention, the apparatus includes a substrate holder that holds a plurality of substrates, and a processing chamber that processes the plurality of substrates while holding the substrates, and the substrate holder is configured to be able to place the substrates. A main body provided with a plurality of first restriction members in a plurality of vertical directions and a first restriction member for restricting a gas flow at a part of the periphery of the substrate placed on the substrate placement part. A plurality of second regulating members that regulate the gas flow in the other peripheral portion of the substrate placed on the substrate placing portion, forming the first gap in the vertical direction; Since the first restricting member has a movable part configured to be retractable from the first position for restricting the gas flow of the part to the second position at least partially overlapping with the first restricting member in the vertical direction, the first restricting member is provided. And the second regulating member regulate the gas flow around the substrate placed on the substrate platform. The film thickness uniformity in the substrate surface can be improved, and a part of the second regulating member can be rotated and retracted to a position where it overlaps in the direction of gravity. Therefore, the dead space can be reduced.

  According to the invention, a plurality of substrate mounting portions configured to be capable of mounting a substrate, and a plurality of first regulating members that restrict gas flow at the peripheral edge of the substrate placed on the substrate placing portion. A main body provided with a first gap in the vertical direction, and a plurality of second regulating members for regulating the gas flow in the other peripheral part of the substrate placed on the substrate placing part. The second restricting member is configured to be retractable from a first position for restricting the gas flow in the other peripheral portion to a second position at least partially overlapping with the first restricting member in the vertical direction. Since the movable portion is provided, the gas flow around the periphery of the substrate placed on the substrate placement portion can be restricted by the first restriction member and the second restriction member, and the in-plane film thickness uniformity And because it is possible to rotate and retract to a position where a part of the second regulating member overlaps in the direction of gravity, Without even to avoid the second regulating member becomes bulky outside the fixed part, it is possible to reduce the dead space.

  Further, according to the present invention, a processing gas is introduced into the processing chamber, and the flow of the processing gas at a part of the peripheral edge of the substrate placed on the substrate mounting portion in the main body portion of the substrate holder is transferred to the main body portion. The first restriction member restricts the flow, and the second restriction member in the movable portion of the substrate holder restricts the flow of the processing gas at the other peripheral portion of the substrate placed on the substrate placement portion. However, the step of processing the substrate, the substrate holder is unloaded from the processing chamber, the movable part is operated, and the second restricting member is at least partially in the vertical direction with respect to the first restricting member. And the step of unloading the substrate from the substrate platform, and the gas flow around the periphery of the substrate placed on the substrate platform by the first regulating member and the second regulating member. Can be regulated, and the excellent effect of improving the in-plane film thickness uniformity can be achieved.

It is a perspective view which shows an example of the substrate processing apparatus which concerns on the Example of this invention. It is a longitudinal cross-sectional view of the processing furnace of this substrate processing apparatus. It is explanatory drawing of the control member which controls the flow of the gas in a present Example, (A) is the state where there is no wafer and the notch part of a control member is closed, (B) is the 2nd control member moving Thus, the notched portion is opened and the tweezer is inserted, and (C) shows the state where the wafer is placed and the notched portion is closed. It is detail drawing of the boat and boat mounting part in this substrate processing apparatus. It is sectional drawing of the boat rotation mechanism which shows the state of a boat rotation mechanism in the case of rotating a 2nd control member. It is a top view of a control member in case there are two notches. It is explanatory drawing regarding the 2nd control member in case there are two notch parts. It is a perspective view which shows the other substrate processing apparatus by which this invention is implemented.

  Hereinafter, a first embodiment of the present invention will be described with reference to the drawings.

  First, an outline of a substrate processing apparatus 1 according to an embodiment of the present invention will be described with reference to FIG.

  A wafer (substrate) (not shown) made of silicon or the like is stored in a cassette 3 serving as a wafer carrier and transported.

  In FIG. 1, reference numeral 4 denotes a housing, and a front maintenance port (not shown) as an opening provided for maintenance is opened below the front wall 5 of the housing 4. A front maintenance door (not shown) that opens and closes the maintenance port is provided. A cassette loading / unloading port (substrate container loading / unloading port) (not shown) is opened in the front maintenance door so as to communicate between the inside and outside of the casing 4. A stage (substrate container delivery table) 6 is installed. The cassette 3 is loaded onto the cassette stage 6 by an in-process transfer device (not shown) and unloaded from the cassette stage 6.

  On the cassette stage 6, the wafer 2 (see FIG. 3) in the cassette 3 is placed in a vertical posture by the in-process transfer device, and the wafer inlet / outlet of the cassette 3 is placed upward. The cassette stage 6 rotates the cassette 3 90 degrees toward the rear of the housing 4, the wafer 2 in the cassette 3 is in a horizontal posture, and the wafer inlet / outlet of the cassette 3 is located behind the housing 4. It can be operated to face.

  A cassette shelf (substrate container mounting shelf) 7 is installed in a substantially central portion of the casing 4 in the front-rear direction. The cassette shelf 7 stores a plurality of cassettes 3 in a plurality of rows and a plurality of rows. It is configured like this. The cassette shelf 7 is provided with a transfer shelf 9 in which the cassette 3 is accommodated, which is a transfer target of a wafer transfer mechanism 8 described later. Further, a spare cassette shelf 11 is provided above the cassette stage 6 so as to store the cassette 3 in a preliminary manner.

  A cassette transfer device (substrate container transfer device) 12 is installed between the cassette stage 6 and the cassette shelf 7. The cassette carrying device 12 includes a cassette elevator (substrate container raising / lowering mechanism) 13 that can move up and down while holding the cassette 3 and a cassette carrying mechanism (substrate container carrying mechanism) 14 as the cassette 3 carrying mechanism. The cassette 3 is transported between the cassette stage 6, the cassette shelf 7, and the spare cassette shelf 11 by the continuous operation of the cassette elevator 13 and the cassette transport mechanism 14.

  Behind the cassette shelf 7, the wafer transfer mechanism (substrate transfer mechanism) 8 is installed. The wafer transfer mechanism 8 is a wafer transfer device capable of rotating or linearly moving the wafer 2 in the horizontal direction. (Substrate transfer apparatus) 15 and a wafer transfer apparatus elevator (substrate transfer apparatus elevating mechanism) 16 for moving the wafer transfer apparatus 15 up and down.

  The wafer transfer device 15 has a plurality of tweezers (substrate transfer tools) 17 for attracting and holding the wafers 2, and the wafers are moved relative to the boat (substrate holder) 18 in cooperation with the wafer transfer device elevator 16. 2 is charged (charged) and unloaded (discharged).

  A processing furnace 19 is provided above the rear portion of the housing 4. A processing chamber is formed inside the processing furnace 19, and a lower end portion of the processing furnace 19 is a furnace port portion. The furnace port portion is opened and closed by a furnace port shutter (furnace port opening / closing mechanism) 21. It has become.

  Below the processing furnace 19, a boat elevator (substrate holder lifting mechanism) 22 is provided as a lifting mechanism for moving the boat 18 up and down to the processing furnace 19, and is connected to a lifting platform of the boat elevator 22. A seal cap 24 as a lid is horizontally installed on the arm 23 as a tool, and the seal cap 24 is configured to support the boat 18 vertically and to close the lower end of the processing furnace 19. Has been.

  The boat 18 has a plurality of struts, in the illustrated example, three fixed struts 26 and one movable strut 27, and a total of four fixed struts 26 and the movable struts 27 flow the processing gas. A ring-shaped regulating member 28 to be regulated is supported. A predetermined number of the regulating members 28 are provided at predetermined intervals in the vertical direction, and a plurality of (for example, about 50 to 150) wafers 2 are aligned in the vertical direction in the center of the regulating member 28 with the centers thereof aligned. Each is held horizontally. The boat 18 is made of a heat-resistant material such as quartz or silicon carbide. The boat 18 will be described in detail later.

  A clean unit 29 composed of a supply fan and a dustproof filter is provided above the cassette shelf 7 so as to supply clean air, which is a cleaned atmosphere, and clean air is placed inside the casing 4. It is configured to be distributed.

  In addition, a clean unit (see FIG. 5) is configured with a supply fan and a dust-proof filter so as to supply clean air to the left end portion of the housing 4 opposite to the wafer transfer device elevator 16 and the boat elevator 22 side. Clean air blown out from the clean unit (not shown) is circulated through the wafer transfer device 15 and the boat 18 and then sucked into an exhaust device (not shown) to be stored in the housing 4. It is designed to be exhausted to the outside.

  Each part constituting the substrate processing apparatus 1 is electrically connected to the controller 98. The controller 98 is configured to control each part of the substrate processing apparatus 1 at a desired condition and at a desired timing.

  Next, the operation of the substrate processing apparatus 1 will be described. In the following description, the operation of each part constituting the substrate processing apparatus 1 is controlled by the controller 98.

  The cassette 3 is loaded from a cassette loading / unloading port (not shown), and is placed on the cassette stage 6 so that the wafer 2 is in a vertical posture and the wafer loading / unloading port of the cassette 3 faces upward. Thereafter, the cassette 3 is moved to the rear side of the housing 4 so that the wafer 2 in the cassette 3 is placed in a horizontal posture by the cassette stage 6 and the wafer 2 entrance of the cassette 3 faces the rear of the housing 4. It can be rotated 90 ° clockwise.

  Next, the cassette 3 is automatically transported and delivered by the cassette transport device 12 to the designated shelf position of the cassette shelf 7 or the spare cassette shelf 11 and temporarily stored. From the cassette shelf 7 or the preliminary cassette shelf 11, the cassette is transferred to the transfer shelf 9 by the cassette transfer device 12 or directly transferred to the transfer shelf 9.

  When the cassette 3 is transferred to the transfer shelf 9, the wafer 2 is picked up from the cassette 3 by the tweezer 17 of the wafer transfer device 15 through the wafer loading / unloading port, and the wafer 2 is loaded on the tweezer 17. It is transported in an adsorbed state and loaded into the boat 18 behind the transfer shelf 9. The wafer transfer device 15 that has transferred the wafer 2 to the boat 18 returns to the cassette 3 and loads the next wafer 2 into the boat 18.

  When a predetermined number of wafers 2 are loaded into the boat 18, the furnace port portion of the processing furnace 19 that has been closed by the furnace port shutter 21 is opened by the furnace port shutter 21. Subsequently, the boat 18 holding the group of wafers 2 is lifted by the boat elevator 22 and the seal cap 24 is loaded into the processing chamber of the processing furnace 19. After loading, arbitrary processing is performed on the wafer 2 in the processing furnace 19. After the processing, the wafer 2 and the cassette 3 are dispensed to the outside of the housing 4 in the reverse procedure to that described above.

  FIG. 2 is a schematic configuration diagram of the processing furnace 19 of the substrate processing apparatus preferably used in the embodiment of the present invention, and is shown as a longitudinal sectional view.

  As shown in FIG. 2, the processing furnace 19 includes a heater 71 as a heating mechanism. The heater 71 has a cylindrical shape and is vertically installed by being supported by a heater base 72 as a support substrate.

  A reaction tube 73 is arranged inside the heater 71 concentrically with the heater 71. The reaction tube 73 includes an inner tube 74 as an internal reaction tube and an outer tube 75 as an external reaction tube provided outside the reaction tube 73. The inner tube 74 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed in a cylindrical shape having an open upper end and a lower end. A processing chamber 76 is formed inside the inner tube 74 and is configured to be able to store the wafers 2 in a state of being arranged in multiple stages in a vertical posture in a horizontal posture by the boat 18.

  The outer tube 75 is made of a heat-resistant material such as quartz or silicon carbide, and has an inner diameter larger than the outer diameter of the inner tube 74 and has a cylindrical shape with an upper end closed and a lower end opened. 74 is provided concentrically.

  A manifold 77 is disposed below the outer tube 75 concentrically with the outer tube 75. The manifold 77 is made of, for example, stainless steel and is formed in a cylindrical shape with an upper end and a lower end opened. The manifold 77 is engaged with the inner tube 74 and the outer tube 75, and is provided so as to support them. An O-ring 78 as a seal member is provided between the manifold 77 and the outer tube 75. Since the manifold 77 is supported by the heater base 72, the reaction tube 73 is installed vertically. A reaction vessel is formed by the reaction tube 73 and the manifold 77.

  A nozzle 79 as a gas introduction part is connected to the seal cap 24 so as to communicate with the inside of the processing chamber 76, and a gas supply pipe 81 is connected to the nozzle 79. A processing gas supply source and an inert gas supply source (not shown) are connected to the upstream side of the gas supply pipe 81 via an MFC (mass flow controller) 82 as a gas flow rate controller. A gas flow rate control unit 83 is electrically connected to the MFC 82 and is configured to control at a desired timing so that the flow rate of the supplied gas becomes a desired amount.

  The manifold 77 is provided with an exhaust pipe 84 for exhausting the atmosphere in the processing chamber 76. The exhaust pipe 84 communicates with a lower end portion of a cylindrical space 85 formed between the inner tube 74 and the outer tube 75. A vacuum exhaust device 88 such as a vacuum pump is connected to the downstream side of the exhaust pipe 84 opposite to the connection side with the manifold 77 via a pressure sensor 86 and a pressure adjustment device 87 as a pressure detector. The processing chamber 76 is configured to be evacuated so that the pressure in the processing chamber 76 becomes a predetermined pressure (degree of vacuum). A pressure control unit 89 is electrically connected to the pressure sensor 86 and the pressure adjustment device 87, and the pressure control unit 89 is controlled by the pressure adjustment device 87 based on the pressure detected by the pressure sensor 86. Control is performed at a desired timing so that the pressure in the processing chamber 76 becomes a desired pressure.

  Below the manifold 77, a seal cap 24 is provided as a furnace port lid that can airtightly close the lower end opening of the manifold 77. The seal cap 24 is brought into contact with the lower end of the manifold 77 from the lower side in the vertical direction. The seal cap 24 is made of a metal such as stainless steel and is formed in a disk shape. An O-ring 91 as a seal member that contacts the lower end of the manifold 77 is provided on the upper surface of the seal cap 24.

  On the opposite side (lower surface side) of the seal cap 24 from the processing chamber 76, a boat rotation mechanism 40 that rotates the boat 18 is installed. A boat rotation shaft 44 of the boat rotation mechanism 40 passes through the seal cap 24 and is connected to the boat 18, and is configured to rotate the wafer 2 by rotating the boat 18.

  The seal cap 24 is configured to be moved up and down in the vertical direction by the boat elevator 22, and the boat 18 can be inserted into and removed from the processing chamber 76. A drive control unit 94 is electrically connected to the boat rotation mechanism 40 and the boat elevator 22, and is configured to control at a desired timing so as to perform a desired operation.

  The boat 18 is configured to hold a plurality of wafers 2 in a multi-stage by aligning a plurality of wafers 2 in a horizontal posture with their centers aligned. In addition, a plurality of heat insulating plates 58 (see FIG. 4) as a disk-shaped heat insulating member made of a heat resistant material such as quartz or silicon carbide are arranged in a multi-stage in a horizontal posture at the lower portion of the boat 18. The heat from the heater 71 is not easily transmitted to the manifold 77 side.

  A temperature sensor 95 as a temperature detector is installed in the reaction tube 73. A temperature control unit 96 is electrically connected to the heater 71 and the temperature sensor 95, and the processing is performed by adjusting the power supply to the heater 71 based on temperature information detected by the temperature sensor 95. Control is performed at a desired timing so that the temperature in the chamber 76 has a desired temperature distribution.

  The gas flow rate control unit 83, the pressure control unit 89, the drive control unit 94, and the temperature control unit 96 also constitute an operation unit and an input / output unit, and are electrically connected to a main control unit 97 that controls the entire substrate processing apparatus. Connected. These gas flow rate control unit 83, pressure control unit 89, drive control unit 94, temperature control unit 96, and main control unit 97 are configured as a controller 98.

  Next, a method of forming a thin film on the wafer 2 by the CVD method as one step of the semiconductor device manufacturing process using the processing furnace 19 having the above configuration will be described. In the following description, the operation of each part constituting the substrate processing apparatus 1 is controlled by the controller 98.

  When a plurality of wafers 2 are loaded into the boat 18 (wafer charging), as shown in FIG. 2, the boat 18 holding the plurality of wafers 2 is lifted by the boat elevator 22. The processing chamber 76 is loaded (boat loading). In this state, the seal cap 24 seals the lower end of the manifold 77 via the O-ring 91.

  The processing chamber 76 is evacuated by a vacuum evacuation device 88 so that a desired pressure (degree of vacuum) is obtained. At this time, the pressure in the processing chamber 76 is measured by the pressure sensor 86, and the pressure adjusting device 87 is feedback-controlled based on the measured pressure. The processing chamber 76 is heated by the heater 71 so as to reach a desired temperature. At this time, the power supply to the heater 71 is feedback-controlled based on the temperature information detected by the temperature sensor 95 so that the inside of the processing chamber 76 has a desired temperature distribution. Subsequently, the boat 2 is rotated by rotating the boat 18 by the boat rotating mechanism 40.

  Next, the gas supplied from the processing gas supply source and controlled to have a desired flow rate by the MFC 82 is introduced into the processing chamber 76 through the nozzle 79 through the gas supply pipe 81. The introduced gas rises in the processing chamber 76, flows out from the upper end opening of the inner tube 74 to the cylindrical space 85, and is exhausted from the exhaust pipe 84. The gas comes into contact with the surface of the wafer 2 as it passes through the processing chamber 76, and at this time, a thin film is deposited on the surface of the wafer 2 by a thermal CVD reaction.

  When a preset processing time elapses, an inert gas is supplied from an inert gas supply source, the inside of the processing chamber 76 is replaced with an inert gas, and the pressure in the processing chamber 76 returns to normal pressure. Is done.

  Thereafter, the seal cap 24 is lowered by the boat elevator 22, the lower end of the manifold 77 is opened, and the processed wafer 2 is held by the boat 18 from the lower end of the manifold 77 to the reaction tube. It is carried out (boat unloading) outside 73. Thereafter, the processed wafer 2 is taken out from the boat 18 (wafer discharge).

  As an example, the processing conditions for processing a wafer in the processing furnace of the present embodiment are, for example, a processing temperature of 300 ° C. or more and 800 ° C. or less in the formation of a silicon nitride film (Si 3 N 4 film). The processing pressure is 10 Pa or more and 1000 Pa or less, the gas type and the gas supply flow rate are ammonia (NH3) gas 0.1 SLM or more and 0.5 SLM or less, and dichlorosilane (SiH2 Cl2) gas 0.3 SLM or more and 5 SLM or less. Is kept constant at a certain value within each range, the wafer is processed.

  The boat 18 will be described with reference to FIGS.

  The boat 18 in the present embodiment spans the disk-shaped bottom plate 31, the top plate 32, and the bottom plate 31, the top plate 32, and has a radius with respect to the fixed support 26 and the bottom plate 31 that are vertically installed. A support column 33 extending in the direction and rotatably provided in the horizontal direction, and the movable support column 27 erected vertically at the tip of the support column support arm 33, the fixed column 26, the movable column 27 The regulating member 28 for regulating the flow of the processing gas is provided.

  Each fixed column 26 is provided with a substrate mounting pin 34 that protrudes in the horizontal direction toward the center. The substrate mounting pin 34 extends further to the center side than the inner edge of the regulating member 28, and the substrate mounting pin 34. The wafer 2 is placed on the inner end, which is the extended portion of the placement pin 34.

  The regulating member 28 is located between the wafers 2 to be held, and has a shape projecting outward from the periphery of the wafer. Further, an appropriate gap is formed in the vertical direction between the regulating member 28 and the wafer 2, and the regulating member 28 and the wafer 2 are not in contact with each other.

  The restricting member 28 includes a ring-shaped first restricting member 35 in which a part of the arc is cut off, and an arc-shaped second restricting member 36 that satisfies the notch 37 of the first restricting member 35. The first restricting member 35 is fixedly supported on the fixed column 26, and the second restricting member 36 is fixedly supported on the movable column 27.

  The column support arm 33 is rotatable about the axis of the boat 18 and is rotatable with respect to the bottom plate 31. Accordingly, the movable support column 27 erected on the support column support arm 33 maintains a vertical state and can rotate around the axis of the boat 18, and the second restriction member fixed to the movable support column 27. 36 is rotatable with respect to the first regulating member 35. The movable column 27 is erected on the column support arm 33 so as to be disposed outside the outer diameter of the first restricting member 35. Further, the outer diameter of the second restricting member 36 is formed to be larger than the outer diameter of the first restricting member 35.

  The second restricting member 36 is not in contact with the first restricting member 35, and the first restricting member 35, the second restricting member 36, and the wafer 2 are appropriately arranged in the vertical direction therebetween. The arrangement is such that a large gap is formed. Preferably, the inner diameter of the second restricting member 36 is formed to be the same as the inner diameter of the first restricting member 35.

  Thus, the bottom plate 31, the top plate 32, the fixed support 26, and the first restricting member 35 constitute a boat body, and the support arm 33, the movable support 27, and the second restricting member 36 are movable. Parts.

  3A to 3C, the relationship between the first restriction member 35 and the second restriction member 36 will be described.

  FIG. 3A shows a state where the second restricting member 36 satisfies the notch 37, and a complete circular ring is formed by the second restricting member 36 and the first restricting member 35. ing.

  FIG. 3B shows a state in which the movable column 27 is rotated counterclockwise in the drawing, and the rotation of the movable column 27 causes the second restricting member 36 to rotate integrally with the movable column 27. The second restricting member 36 is at least partially overlapped with the first restricting member 35 to open the notch 37. The opened notch 37 forms a conveyance space for the tweezers 17 to enter and retreat.

  FIG. 3B shows a state in which the tweezer 17 has entered the opened notch 37 and the wafer 2 is mounted on the substrate mounting pins 34. FIG. 3C shows a state where the second restricting member 36 satisfies the notch 37. Further, FIG. 3C also shows a state in which the wafer 2 is placed on the substrate placement pins 34.

  Next, the boat mounting part 39 of the boat elevator 22 will be described with reference to FIG.

  The seal cap 24 is provided at the tip of the arm 23 extending in the horizontal direction from the boat elevator 22. A boat rotation mechanism 40 is provided so as to airtightly penetrate the seal cap 24 from below the arm 23.

  A speed reducer 41 is attached to the lower part of the boat rotation mechanism 40. A hollow outer rotating shaft 42 is rotatably provided inside the boat rotating mechanism 40 via a bearing 43, and a hollow boat rotating shaft 44 is provided concentrically with the outer rotating shaft 42 at the upper end of the outer rotating shaft 42. It has been.

  The boat rotation shaft 44 passes through the seal cap 24, and a boat placement board 45 is fixed to the upper end of the boat rotation shaft 44, and the boat 18 is placed on the boat placement board 45.

  A worm wheel 46 is accommodated in the speed reducer 41, and the worm wheel 46 is fitted to the outer rotating shaft 42. A worm 47 is engaged with the worm wheel 46, and the worm 47 is fitted to an output shaft 48 of a boat rotation motor (not shown). A rotation detector (not shown) for detecting the rotation position of the outer rotation shaft 42 is provided so that the rotation position of the outer rotation shaft 42 relative to the seal cap 24 is detected, and the rotation detection is performed. The device can detect the reference position of the outer rotating shaft 42, that is, the boat mounting board 45. The rotation detector may detect the rotation of the outer rotation shaft 42 or may detect the rotation of the output shaft 48. The rotation detector is provided in the boat rotation motor, for example. An encoder is used.

  An inner rotating shaft 49 penetrating the center of the outer rotating shaft 42 and the boat rotating shaft 44 is rotatably provided through a bearing 50, and the inner rotating shaft 49 is hermetically sealed. The upper end portion of the inner rotating shaft 49 protrudes from the boat mounting board 45, and the support arm 33 is fixed to the upper end of the inner rotating shaft 49. A part of the lower end portion of the inner rotating shaft 49 is cut into a semi-cylindrical shape, and a flat surface 51 is formed. The flat surface 51 protrudes downward from the lower surface of the speed reducer 41.

  An inner rotation shaft spring 52, which is a torsion coil spring as an elastic body, is fitted on the lower end portion of the inner rotation shaft 49. One end of the inner rotation shaft spring 52 is bent toward the center side, and the flat surface 51. The other end extends in the tangential direction and is engaged with the outer rotation shaft 42. Although not particularly illustrated, a stopper is mechanically provided between the inner rotating shaft 49 and the outer rotating shaft 42, and the inner rotating shaft spring 52 is connected to the inner rotating shaft 49 and the outer rotating shaft 42. An initial deflection is given so as to ensure contact with the stopper.

  The state in which the inner rotating shaft 49 and the outer rotating shaft 42 are in contact with each other, that is, the relative rotational position between the inner rotating shaft 49 and the outer rotating shaft 42 is the movable strut 27 and the fixed strut 26. The positions are as shown in FIGS. 3A and 3C.

  A lock rod 54 is provided on the lower surface of the speed reducer 41 via a slide bearing 53 so as to be slidable in a direction perpendicular to the axis of the inner rotary shaft 49, and the tip of the lock rod 54 is formed on the flat surface 51. The base end of the lock rod 54 is connected to a lock actuator 55 that is a linear drive unit such as a cylinder or a solenoid.

  Thus, the lock rod 54 is advanced and retracted by the lock actuator 55 so that the tip of the lock rod 54 comes into contact with and separates from the flat surface 51, and the lock rod 54 contacts the flat surface 51. In the contacted state, the rotation of the inner rotating shaft 49 is restrained.

  The inner rotating shaft 49, the inner rotating shaft spring 52, the lock rod 54, the lock actuator 55, the column support arm 33, the movable column 27, etc. constitute a second restricting member rotation mechanism 56.

  As a method for restricting the rotation of the inner rotating shaft 49, a pin extending in the horizontal direction is provided at the lower end of the inner rotating shaft 49, and the engaging member is moved in and out of the rotating surface of the pin. Good.

  The rotation (relative rotation) operation of the second restriction member 36 with respect to the first restriction member 35 will be described with reference to FIG.

  In a normal state (when the transfer of the wafer 2 is not performed by the wafer transfer mechanism 8), the lock rod 54 is retracted from the lock actuator 55, and the lock rod 54 is separated from the flat surface 51. Yes. That is, the outer rotating shaft 42 and the inner rotating shaft 49 are in contact with each other via a stopper (see FIG. 5A).

  Therefore, the support column support arm 33 and the movable support column 27 are not rotated relative to the seal cap 24 and the fixed support column 26. Similarly, the second control member 36 is the first control member 35. The notch 37 is satisfied by the second restricting member 36, and the restricting member 28 is in a completely circular state (see FIG. 3A).

  Next, the lock rod 54 is advanced by the lock actuator 55, the lock rod 54 is brought into contact with the flat surface 51, and the rotation of the inner rotation shaft 49 is restrained (see FIG. 5B).

  The boat rotation motor (not shown) is driven in a state where the rotation of the inner rotation shaft 49 is constrained, and the outer rotation shaft 42 is rotated by a predetermined angle via the worm 47 and the worm wheel 46. The rotation direction of the outer rotation shaft 42 is a direction in which the inner rotation shaft spring 52 is further bent, and the boat mounting board 45 is rotated by a predetermined angle via the boat rotation shaft 44 by the rotation of the outer rotation shaft 42. Is done. At this time, since the rotation of the inner rotation shaft 49 is restricted, the inner rotation shaft 49 rotates relative to the outer rotation shaft 42 by a predetermined angle in the opposite direction. In this case, the rotation angle is an angle at which the second restricting member 36 completely opens the notch 37, and is determined as appropriate according to the width of the tweezer 17, the outer diameter of the wafer 2, and the like. Then, it is approximately 30 °.

  Further, the first restricting member 35 is rotated together with the boat mounting board 45 through the fixed support column 26, and at the same time, the notch 37 is also rotated. The position of the notched portion 37 after the rotation faces the wafer transfer device 15 and coincides with the advancing / retreating direction of the tweezers 17 (see FIG. 3B).

  Since the cutout portion 37 is opened and a transfer space for the tweezers 17 to enter and retreat is secured, the wafer transfer mechanism 8 transfers the wafer 2 to the boat 18.

  The movement of the tweezers 17 for transferring the wafer 2 is briefly described. The tweezers 17 are inserted between the upper surface of the first regulating member 35 and the upper surface of the substrate mounting pins 34 with the wafer 2 mounted thereon. When the wafer 2 reaches the center of the boat 18, the wafer 2 is slightly lowered. As the tweezers 17 are lowered, the wafer 2 is placed on the substrate placement pins 34, and a gap is generated between the lower surface of the wafer 2 and the upper surface of the tweezers 17. In this state, the transfer of the wafer 2 to the boat 18 is completed by retracting the tweezers 17.

  It should be noted that when the wafer 2 is dispensed from the boat 18, the above operation may be reversed.

  Further, when the wafer 2 is placed on the substrate placement pins 34, a gap is formed between the second regulating member 36, the regulating member 28, and the wafer 2.

  When a predetermined number of wafers 2 are loaded in the boat 18 and the tweezers 17 are retracted, the boat rotation motor (not shown) is driven in a direction opposite to the rotation direction. The rotation of the inner rotation shaft 49 is still constrained by the lock rod 54, and the second restricting member 36 is relatively rotated with respect to the first restricting member 35 in the direction of filling the notch 37. The rotation direction is a direction in which the inner rotation shaft spring 52 is restored. When the boat mounting board 45 is rotated in a reverse direction by a predetermined angle, the lock rod 54 is retracted by the lock actuator 55, and the inner rotating shaft 49 is rotated with respect to the outer rotating shaft 42 by a stopper (not shown). The position of the direction is determined.

  Here, in order to return the inner rotating shaft 49 relative to the boat mounting board 45, the lock rod 54 is retracted, and the inner rotating shaft 49 is restored by the restoring force of the inner rotating shaft spring 52. Can be rotated in the reverse direction, but sudden rotation and stop of the inner rotation shaft 49 may induce dust generation, and as described above, it is preferable to return slowly by the boat rotation motor.

  In a state where the lock of the inner rotating shaft 49 by the lock rod 54 is released, the inner rotating shaft 49 and the outer rotating shaft 42 are integrated with each other via the inner rotating shaft spring 52 and a stopper. And the outer rotating shaft 42 and the inner rotating shaft 49 are integrally formed by rotating the outer rotating shaft 42 by the boat rotating motor (not shown), that is, the first restricting member 35 and the second restricting member. The member 36 can be rotated integrally while maintaining a complete circular state (see FIG. 3C).

  As described above, the furnace port portion of the processing furnace 19 is opened by the furnace port shutter 21, and the boat 18 is loaded into the processing chamber 76 of the processing furnace 19 by the boat elevator 22.

  The wafer 2 is heated in the processing chamber of the processing furnace 19 and a processing gas is introduced, and the wafer 2 is subjected to a required processing. In the processing chamber, the restricting member 28 (the first restricting member 35 and the second restricting member 36) exists around the wafer 2, so that the flow of processing gas at the peripheral portion of the wafer 2 is caused by the restricting member 28. However, it is regulated so as to be the same as the flow of the processing gas inside the wafer 2. For this reason, the uniformity of the film formation of the wafer 2 is improved, and the processing quality and the yield can be improved.

  Further, since the boat 18 is rotated by the boat rotating mechanism 40 during processing, the flow of the processing gas with respect to the wafer 2 is equalized. Similarly, the uniformity of film formation is improved, and the processing quality and yield are improved. To do.

  In order to improve the temperature uniformity of the processing chamber, it is preferable to insulate the furnace port portion, and a plurality of heat insulating plates 58 are loaded in the lower portion of the boat 18 to form an insulating region. As for the heat insulating region, the regulating member 28 may not be divided and may be an integral ring shape, or the regulating member 28 may be omitted. Furthermore, you may comprise the said heat insulation area with a boat cap.

  6 and 7 show a second embodiment. FIG. 6 shows a state where the tweezers 17 have placed the wafers 2 and entered the boat 18, and FIG. 7 is simplified and shows only one stage of the second restricting member 36.

  In the second embodiment, the tweezers 17 of the wafer transfer mechanism 8 are of the lifting type, and the tip of the tweezers 17 protrudes from the wafer 2. Therefore, in order to avoid interference between the tip of the tweezer 17 and the regulating member 28, the regulating member 28 is formed with notches 37a and 37b at two opposing positions.

  The column support arm 33 has a length equivalent to the diameter of the bottom plate 31, and movable columns 27 a and 27 b are erected at both ends, and the notches 37 a and 37 b are satisfied in the movable columns 27 a and 27 b, respectively. The second regulating members 36a and 36b are fixed.

  Preferably, the length of the arc of the second restricting member 36a located on the proximal end side in the approach direction of the tweezers 17 is longer than the arc length of the second restricting member 36b located on the distal end side in the approach direction of the tweezers 17. Further, it is preferable that the arc length of the notch 37a located on the proximal side in the approach direction of the tweezers 17 is larger than the arc length of the notch 37b located on the tip side in the approach direction of the tweezers 17.

  Thereby, the possibility of interference between the movable column 27a and the tweezer 17 or the wafer 2 placed on the tweezer 17 can be further suppressed, and the wafer 2 can be transferred more completely. .

  By rotating the support pillar support arm 33 forward and backward, the second restricting members 36a and 36b rotate forward and backward with respect to the first restricting member 35 via the movable supports 27a and 27b, and the notch 37a. , 37b are opened or satisfied.

  Preferably, the inner rotary shaft 49 is further provided with a lock member that can be disengaged from the bottom plate 31. When the inner rotating shaft 49 is rotatable between a first position where the engagement with the bottom plate 31 is released and a second position where the lock member is engaged with the bottom plate 31, in preparation for an earthquake or the like The holder boat can be prevented from falling and the lock can be released when it is not necessary to suppress the holder boat from falling.

  In addition, since the lock member, the rotation of the boat 18 and the mechanism for the relative rotation of the second regulating member 36 are centrally installed on the boat mounting portion, the generation of organic contaminants, particles, etc. is suppressed, The influence of the generated contaminants on the wafer 2 can be suppressed.

  As described above, according to the present invention, at least one or more of the following effects can be achieved.

  (1) At the time of substrate processing, the first regulating member 35 and the second regulating member 36 can regulate the processing gas flow at the periphery of the substrate placed on the substrate placing portion, and the in-plane film thickness Uniformity can be improved.

  (2) When the substrate is inserted into and removed from the substrate mounting portion, the second restricting member 36 is retracted to a position where at least a part of the second restricting member 35 overlaps with the substrate carrying tool (tweezer) 17 and the first. 2 The substrate can be inserted and removed without causing interference with the regulating member 36.

  (3) By rotating and retracting the second restricting member 36 to a position where the first restricting member 35 and a part of the second restricting member 35 overlap each other in the direction of gravity when the substrate is inserted / extracted, the substrate transfer tool (tweezer) 17 and the boat There is no fear of interference with the (movable ring portion) 18. Therefore, the pitch between the substrates can be reduced, and the number of mounted sheets (number of processed sheets per batch) can be increased.

  (4) Since a part of the second restricting member 36 can be rotated and retracted to a position where it partially overlaps in the direction of gravity, the second restricting member 36 does not become bulky outside the fixed portion even when retracted. Therefore, the dead space can be reduced.

  (5) The second restricting member 36 is provided in at least two locations facing each other in the advancing / retreating direction of the substrate transport tool, and the rotating unit moves the second restricting member 36 from the two locations to the first restricting portion. Since it is possible to rotate at the same time up to the position where it overlaps with the member 35 in the direction of gravity (vertical direction), it is possible to cope with the substrate transport of the lifting method. That is, in the case of the uplifting method, the peripheral edge of the substrate is held by the tweezers 17 on the back side in the advancing direction of the tweezers 17. Thus, it is possible to carry the substrate by the lifting method.

  (6) The throughput can be improved by rotating the second restricting member 36 provided at the two locations at the same time so as to overlap the fixing ring portion and the gravitational direction (vertical direction).

  (7) Since the boat 18 including the first restricting member 35 and the second restricting member 36 can be integrally rotated, in-plane uniformity of the wafer film thickness can be ensured.

  (8) In the rotating part, the first rotating shaft for rotating the boat body part and the second rotating shaft for rotating the boat body part and the movable part integrally are formed coaxially, The rotating mechanism can be integrated below the boat 18 to suppress adverse effects on the substrate placed on the boat (fixed substrate placing portion) 18 due to organic contaminants or particles generated by wear of the rotating body. it can.

  FIG. 8 shows a case where the present invention is implemented in another substrate processing apparatus 60. In FIG. 8, the same components as those shown in FIG.

  The cassette 3 used in the substrate processing apparatus 60 is hermetically sealed. Outside the substrate processing apparatus 60, the wafer 2 is transported in a state of being sealed in the cassette 3, and the cassette 3 is placed inside the substrate processing apparatus 60. A cassette opener 61 for opening and closing the lid is provided.

  In addition, a boat exchange device 62 is provided in the housing 4 at a position facing the boat elevator 22, and loading and unloading of wafers 2 into the boat 18 using a plurality of boats 18 and substrate processing are performed in parallel. To improve the throughput.

  In FIG. 8, 63 indicates a wafer transfer position 63 where the boat 2 is loaded and unloaded with wafers 2, and 64 indicates a boat standby position where the processed boat 18 is temporarily stored.

  The boat 18 loaded with the wafer 2 at the wafer transfer position 63 is transferred to the seal cap 24 by the boat exchange device 62 and is loaded into the processing furnace 19 by the boat elevator 22.

  When the processing is completed, the processed boat 18 is transferred to the boat standby position 64 by the boat changing device 62, and the boat 18 loaded with unprocessed wafers is transferred to the seal cap 24 by the boat changing device 62. The untreated boat 18 is again charged into the processing furnace 19. When the wafer transfer position 63 becomes empty, the processed boat 18 is transferred from the boat standby position 64 to the wafer transfer position 63 by the boat changing device 62, and the wafer 2 is discharged from the processed boat 18. .

  By repeating the above operation, loading and unloading of the wafer 2 are performed during the processing of the wafer 2, and a wasteful time for transferring the wafer 2 is eliminated, thereby improving the throughput.

  By implementing the present invention in the substrate processing apparatus 60, during the substrate processing, the first regulating member 35 and the second regulating member 36 regulate the processing gas flow around the periphery of the substrate placed on the substrate platform. The same effects as described above can be obtained, for example, the uniformity of the in-plane film thickness can be improved.

(Appendix)
The present invention includes the following embodiments.

  (Supplementary Note 1) A substrate holder that holds a plurality of substrates, and a processing chamber that holds the plurality of substrates while holding the substrates by the substrate holder, and the substrate holder is configured to be able to place the substrates. A main body provided with a substrate placing portion and a first regulating member that regulates a gas flow at a part of the periphery of the substrate placed on the substrate placing portion in a plurality of vertical directions; A movable portion having a plurality of second restriction members that regulate the gas flow in the other peripheral portion of the substrate placed on the substrate placement portion, forming the first gap in the vertical direction, wherein the first restriction member comprises: There is a second gap in the circumferential direction, the second restricting member has a shape that fills the second gap, and the second gap is moved from a first position that fills the second gap to the second restricting member. Open and retractable to a second position at least partially overlapping with the first restricting member in the vertical direction. The substrate processing apparatus according to claim.

  (Supplementary note 2) In Supplementary note 1, the first restriction member and the second restriction member are arranged such that the first restriction member and the second restriction member when the second restriction member is located at the first position. A substrate processing apparatus configured to surround the entire periphery of the substrate supported by the substrate mounting portion.

  (Supplementary note 3) The substrate processing apparatus according to supplementary note 1, further comprising a rotating mechanism for rotating the movable part so that the second restricting member is movable between the first position and the second position.

  (Additional remark 4) In additional remark 1, the said 1st control member is provided with two or more with the 1st circular arc body formed in circular arc shape leaving the 2nd gap | interval in the circumferential direction, The said 2nd control member is A substrate processing apparatus in which a plurality of second circular arc bodies formed in an arc shape are provided with a third gap in the circumferential direction.

  (Supplementary note 5) The substrate processing apparatus according to supplementary note 4, further comprising a substrate transfer tool for transferring the substrate to the substrate mounting portion through the second gap.

  (Appendix 6) In Appendix 4, the plurality of second arcuate bodies are configured to be movable so as to simultaneously satisfy at least two second gaps in the circumferential direction of the plurality of first arcuate bodies. Substrate processing equipment.

  (Supplementary note 7) The substrate processing apparatus according to supplementary note 3, wherein the rotation mechanism is configured to further rotate the main body portion and the movable portion integrally.

  (Supplementary Note 8) In Supplementary Note 7, the rotation mechanism includes a first rotation shaft that rotates the movable portion relative to the main body portion, and a second rotation shaft that rotates the main body portion and the movable portion integrally. Is a substrate processing apparatus formed coaxially.

  (Supplementary note 9) The substrate processing apparatus according to supplementary note 8, further comprising a lock portion for engaging the main body portion with the second rotation shaft or the movable portion.

  (Supplementary Note 10) A first support column including a substrate holder that holds a plurality of substrates and a processing chamber that holds the plurality of substrates while holding the substrates, and the substrate holders are provided in parallel with each other. A plurality of first restriction members that are vertically formed with respect to the first support columns and restrict gas flow; and a substrate that is provided on each of the first support columns or the first control members. A main body unit including at least a substrate mounting unit configured to be mounted, a second column provided in parallel with the first column, and the first gap formed in a vertical direction with respect to the second column. A plurality of second restricting members that restrict the gas flow, and the second restricting member of the movable portion is mounted on the substrate on which the first restricting member restricts the gas flow. Periphery other than the peripheral part of the substrate placed on the mounting part The first position for regulating the gas flow, the first regulating member, and the second regulating member are configured to be movable between a first position and a second position at least partially overlapping with each other in the vertical direction. A substrate processing apparatus.

  (Supplementary Note 11) A plurality of substrate placement portions configured to be able to place a substrate, and a plurality of first restriction members for restricting a gas flow at a peripheral portion of the substrate placed on the substrate placement portion in a plurality of vertical directions. A main body provided with a first gap, and a plurality of second regulating members for regulating the gas flow at the other peripheral edge of the substrate placed on the substrate platform, the first gap being formed in a plurality of vertical directions. And the second restricting member is configured to be retractable from a first position for restricting the gas flow in the other peripheral portion to a second position at least partially overlapping with the first restricting member in the vertical direction. A substrate holder having a movable part.

  (Additional remark 12) In Additional remark 11, the said 1st control member is provided with two or more 1st circular arc bodies formed in circular arc shape in the circumferential direction, and the said 2nd control member is A substrate holder in which a plurality of second circular arc bodies formed in an arc shape are provided with a third gap in the circumferential direction.

  (Supplementary note 13) In Supplementary note 11, a plurality of first struts provided in parallel to each other and a plurality of first struts that are provided with a first gap in the vertical direction with respect to the first struts to regulate gas flow A main body portion including at least a member, and a substrate mounting portion configured to be capable of mounting a substrate provided on each of the first support column and the first regulating member, and a second support column provided in parallel with the first support column And a movable part provided at least with a second regulating member that regulates the gas flow and that is provided in a plurality in the vertical direction with respect to the second support column. 2 regulating members are a first position that regulates the gas flow in the other part of the periphery different from a part of the periphery of the substrate placed on the substrate placing part on which the first regulating member regulates the gas flow, and the first The regulating member and the second regulating member are perpendicular to the first support column. At least partially overlaps the second position and movable Configured substrate holder with Te.

  (Supplementary Note 14) A processing gas is introduced into the processing chamber, and the flow of the processing gas at a part of the peripheral edge of the substrate placed on the substrate mounting portion in the main body portion of the substrate holder is changed in the main body portion. While restricting by 1 restricting member and restricting the flow of the processing gas at the other peripheral part of the substrate placed on the substrate placing part by the second restricting member in the movable part of the substrate holder, A step of processing the substrate; unloading the substrate holder from the processing chamber; operating the movable portion; and the second restricting member at least partially overlaps the first restricting member in the vertical direction. A method of manufacturing a semiconductor device, comprising: a step of retracting to a position and unloading the substrate from the substrate mounting portion.

  (Supplementary note 15) In the substrate carry-out step of supplementary note 14, the movable part is operated while carrying out the substrate holder from the processing chamber, and the second restricting member is moved vertically with respect to the first restricting member. And a method of manufacturing a semiconductor device that retracts to a position where at least a part of the semiconductor devices overlap.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Wafer 3 Cassette 8 Wafer transfer mechanism 17 Tweezer 18 Boat 22 Boat elevator 23 Arm 24 Seal cap 26 Fixed support | pillar 27 Movable support | pillar 28 Control member 31 Bottom plate 33 Support | pillar support arm 34 Substrate mounting pin 35 1st control member 36 Second restriction member 37 Notch portion 42 Outer rotation shaft 49 Inner rotation shaft 52 Inner rotation shaft spring 54 Lock rod 55 Lock actuator 58 Heat insulation plate

Claims (5)

  A substrate holder that holds a plurality of substrates; and a processing chamber that processes the plurality of substrates while holding the substrates by the substrate holder; And a body part including a plurality of first regulating members that regulate a gas flow at a part of the periphery of the substrate placed on the substrate placing part in a plurality of vertical directions, and the substrate placing part A plurality of second regulating members that regulate the gas flow in the other peripheral portion of the substrate placed on the substrate, forming the first gap in the vertical direction, and the second regulating member regulates the gas flow in the other peripheral portion. A substrate processing apparatus comprising: a movable portion configured to be retractable from a first position to a second position at least partially overlapping with the first regulating member in the vertical direction.   The first restricting member and the second restricting member are supported by the substrate mounting portion with the first restricting member and the second restricting member when the second restricting member is located at the first position. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is configured to surround the entire periphery of the substrate.   The substrate processing apparatus according to claim 1, wherein a rotation mechanism that allows the second restricting member to move between the first position and the second position is configured.   A plurality of first gaps are formed in a plurality of vertical directions by a substrate placing portion configured to be able to place a substrate and a first regulating member that regulates a gas flow at a peripheral portion of the substrate placed on the substrate placing portion. A plurality of second regulating members that regulate the gas flow in the other peripheral portion of the substrate placed on the substrate platform, with the first gap formed in the vertical direction; (2) A movable part configured to be retractable from a first position for regulating the gas flow in the other peripheral part to a second position at least partially overlapping with the first regulating member in the vertical direction. A substrate holder comprising the substrate holder.   A processing gas is introduced into the processing chamber, and the flow of the processing gas at a part of the peripheral edge of the substrate placed on the substrate placement portion in the main body portion of the substrate holder is transferred to the first regulating member in the main body portion. And processing the substrate while restricting the flow of the processing gas at the other peripheral portion of the substrate placed on the substrate placement portion by the second restriction member in the movable portion of the substrate holder. And unloading the substrate holder from the processing chamber, operating the movable portion, and retracting the second restricting member to a position at least partially overlapping with the first restricting member in the vertical direction. And a step of unloading the substrate from the substrate mounting portion.

Images