KR20220129490A - 반도체 소자, 이 반도체 소자를 포함하는 반도체 장치 및 디스플레이 패널 - Google Patents

반도체 소자, 이 반도체 소자를 포함하는 반도체 장치 및 디스플레이 패널 Download PDF

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Publication number
KR20220129490A
KR20220129490A KR1020220032791A KR20220032791A KR20220129490A KR 20220129490 A KR20220129490 A KR 20220129490A KR 1020220032791 A KR1020220032791 A KR 1020220032791A KR 20220032791 A KR20220032791 A KR 20220032791A KR 20220129490 A KR20220129490 A KR 20220129490A
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KR
South Korea
Prior art keywords
layer
metal element
semiconductor
semiconductor layer
semiconductor device
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Pending
Application number
KR1020220032791A
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English (en)
Korean (ko)
Inventor
민-순 시에
유-츠 리
웨이-젠 수에
Original Assignee
에피스타 코포레이션
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Application filed by 에피스타 코포레이션 filed Critical 에피스타 코포레이션
Publication of KR20220129490A publication Critical patent/KR20220129490A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H01L33/38—
    • H01L33/0093—
    • H01L33/0095—
    • H01L33/30—
    • H01L33/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

Landscapes

  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
KR1020220032791A 2021-03-16 2022-03-16 반도체 소자, 이 반도체 소자를 포함하는 반도체 장치 및 디스플레이 패널 Pending KR20220129490A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/203,293 US11894489B2 (en) 2021-03-16 2021-03-16 Semiconductor device, semiconductor component and display panel including the same
US17/203,293 2021-03-16

Publications (1)

Publication Number Publication Date
KR20220129490A true KR20220129490A (ko) 2022-09-23

Family

ID=83114734

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020220032791A Pending KR20220129490A (ko) 2021-03-16 2022-03-16 반도체 소자, 이 반도체 소자를 포함하는 반도체 장치 및 디스플레이 패널

Country Status (6)

Country Link
US (2) US11894489B2 (enExample)
JP (1) JP2022142782A (enExample)
KR (1) KR20220129490A (enExample)
CN (1) CN115084182A (enExample)
DE (1) DE102022105994A1 (enExample)
TW (1) TW202239017A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115172557A (zh) * 2022-08-03 2022-10-11 天津三安光电有限公司 发光二极管，发光二极管封装体和发光装置
CN116130572A (zh) * 2023-04-18 2023-05-16 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
TWI378573B (en) * 2007-10-31 2012-12-01 Young Lighting Technology Corp Light emitting diode package
US8592847B2 (en) 2011-04-15 2013-11-26 Epistar Corporation Light-emitting device
KR20140146467A (ko) 2013-06-17 2014-12-26 한국전자통신연구원 발광 다이오드 및 그 제조 방법
KR102512027B1 (ko) * 2016-03-08 2023-03-21 엘지이노텍 주식회사 반도체 소자, 표시패널, 표시장치 및 표시패널 제조방법
KR102552655B1 (ko) 2018-08-10 2023-07-06 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지 및 광원 모듈
KR102616245B1 (ko) * 2018-10-05 2023-12-21 삼성디스플레이 주식회사 디스플레이 장치
WO2020202758A1 (ja) * 2019-03-29 2020-10-08 パナソニックＩｐマネジメント株式会社 光デバイス、光電変換装置、および燃料生成装置
US11152540B2 (en) * 2019-07-29 2021-10-19 Lextar Electronics Corporation Light emitting diode structure and method of manufacturing thereof
TWI715437B (zh) 2020-02-12 2021-01-01 光鋐科技股份有限公司 紫外光發光二極體及其製造方法
WO2021188920A1 (en) * 2020-03-20 2021-09-23 Sensor Electronic Technology, Inc. Optoelectronic device with reduced optical loss

Also Published As

Publication number Publication date
CN115084182A (zh) 2022-09-20
JP2022142782A (ja) 2022-09-30
DE102022105994A1 (de) 2022-09-22
US11894489B2 (en) 2024-02-06
TW202239017A (zh) 2022-10-01
US12426411B2 (en) 2025-09-23
US20220302346A1 (en) 2022-09-22
US20240186449A1 (en) 2024-06-06

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