KR20220126822A - A Method of Surface Treatment and Packaging for Implant and Its System - Google Patents

Abstract

The present invention relates to an implant surface treatment packaging method and a system therefor. More specifically, the method includes: a packaging step of wrapping the outer edge of an implant with an implant packaging body; a surface treatment step of modifying the surface of the implant in a wrapped state to be hydrophilic; a gas treatment step of improving the stability of the packaged implant by treating the gas inside the implant packaging body; and a sealing step of sealing the implant packaging body. By modifying the surface of the implant to be hydrophilic in a state in which the implant is packed, a bone and/or surrounding tissue easily adheres to the implant, thereby shortening the bone union period and improving the initial stability of the implant. After the surface treatment of the implant, the implant is not exposed to the air and is blocked from the outside air such that it is possible to prevent biological aging which may occur due to exposure to air.

Description

Implant surface treatment packaging method and its system {A Method of Surface Treatment and Packaging for Implant and Its System}

The present invention relates to an implant surface treatment packaging method and a system therefor, and more particularly, a packaging step of wrapping the outer portion of an implant with an implant packaging body, a surface treatment step of modifying the surface of the implant in a packaged state to be hydrophilic, and an implant packaging body By modifying the surface of the implant to be hydrophilic in a state in which the implant is packaged, including a gas treatment step of processing the gas inside to improve the stability of the packaged implant, and a sealing step of sealing the implant package, the bone and/or surrounding area The tissue easily adheres to the implant and shortens the period of osseointegration to improve the initial stability of the implant, and after surface treatment of the implant, the implant is not exposed to the air and is blocked from the outside air, thereby preventing biological aging that can occur due to exposure to air. It relates to an implant surface treatment packaging method and a system therefor.

Dental implants or implants used in artificial joints are fixed to the body and support the movement of the joints around the implant. These implants secure initial stability by mechanical fixation, and secure long-term stability by osseointegration that adheres to the implant or combines with the implant as the bone or surrounding tissue recovers. 1 is a view showing the stability after implantation of the implant. The dotted line in FIG. 1 indicates stability by mechanical fixation of the implant, and the dashed-dotted line indicates stability by osseointegration. Referring to FIG. 1 , although the strength due to mechanical fixation decreases over time, the bone adheres to the surface of the implant and is supported by the bone and surrounding muscle tissue. This ensures long-term stability.

The material mainly used for implants is titanium. In the body, titanium forms a titanium oxide film on the surface, and the titanium oxide film has the properties of a cathode and thus has hydrophilicity. Hydrophilicity, which allows for easy contact with water, can be expressed as a contact angle of a liquid with respect to a metal substrate when any liquid contacts the metal substrate. The contact angle is the angle between the free surface of the liquid and the solid plane when the liquid is in contact with the solid, and is determined by the cohesive force between liquid molecules and the adhesion force between the liquid and the solid. When the contact angle between the liquid and the solid plane exceeds 90˚, the solid plane can be defined as hydrophobicity, which is a property of low affinity for water, and when the liquid and the solid plane's contact angle is less than 90˚ A plane can be defined as hydrophilicity, the property of having an affinity for water.

When titanium is left in the air, carbon in the air combines with titanium oxide to suppress the hydrophilicity of the titanium film, and the hydrophilicity of the titanium film decreases, which is called biologic aging. When the hydrophilicity of the implant decreases, the bone osseointegration ability decreases and the initial stability of the implant decreases. Therefore, there is a problem in that the initial movement ability of the implanted patient is lowered. Post-rehabilitation has a significant impact on the long-term patient's exercise ability.

Therefore, a surface treatment method is required to maintain the hydrophilicity of the surface of the implant. There is a method of supplying the implant by putting the implant in saline to prevent exposure to air, but there is a disadvantage in that the shelf life of the saline is short if the quality of the implant is deteriorated when the saline is contaminated.

Next, as in Korean Patent Registration No. 10-1196171, hydrophilic surface modification can be performed by irradiating ultraviolet rays on the titanium surface of the implant. However, in the case of hydrophilic surface modification through UV, the material of the implant package must be quartz glass in order for ultraviolet rays to pass through the implant package surrounding the implant. In the case of a small dental implant, the implant can be placed in a quartz glass housing or case and supplied to the operation room. It has the disadvantages of high cost and poor economic feasibility.

In addition, in general, implants are supplied while being surrounded by the implant package to prevent contamination. However, when hydrophilic treatment is performed on the surface of the implant through ultraviolet (UV) light, the sterilization state is released because the packaging of the implant must be removed. there is a problem to be

On the other hand, the surface can be modified by colliding particles with high energy in the plasma state onto the surface of the material. Plasma is composed of electrons, ions, and neutral particles (atoms and molecules) generated by applying high temperature and high pressure through glow plasma, arc discharge, etc., which ionizes air by electric discharge by passing electric current through gas in a state close to vacuum. It can be classified as partially ionized thermal plasma, etc., and is an aggregate of charged particles having physical electrical conductivity and collectively reacts to an external electromagnetic field.

By applying a high voltage to the gas, atoms or molecules can be ionized even at low temperatures. For example, in the case of argon (Ar) gas, at a pressure of 1 mTorr to 100 Torr, even if there is an electric field of 100 V or more per 1 cm, plasma can be generated. When a gas containing oxygen is plasmaized, positive and negative ions, single oxygen atoms, ozone, and ionized oxygen atoms are generated. By removing carbon adsorbed on the surface of the implant by plasma (radical), the hydrophilicity of the implant can be improved.

Even if the hydrophilic surface treatment is performed in this way, when a certain period of time elapses while the implant surface is exposed to air, the titanium on the implant surface reacts again with carbon atoms in the air, resulting in biological aging. There is a problem in that the surface of the implant is exposed to the air and the hydrophilicity of the surface is deteriorated unless packaging is done immediately after the surface of the implant is treated. Furthermore, in order to apply the hydrophilic surface treatment to the immediate insertion of the implant, the user must perform the hydrophilic surface treatment process on the surface of the implant in the operating room. In the operating room, there is no choice but to carry out this process by a doctor or a medical person, so the operation time is delayed and there is a possibility that the surface treatment is not performed well compared to the technician.

Therefore, in the art, by modifying the surface of the implant to be hydrophilic through plasma, the implant prevents biological aging from occurring on the implant surface by ensuring initial stability during implant treatment and maintaining hydrophilicity during the manufacturing process of the implant for a long period of time. Surface treatment and packaging methods are required.

Korean Patent Publication No. 10-1196171 (October 24, 2012)

The present invention has been devised to solve the above problems,

An object of the present invention is to provide a packaging step of enclosing the outside of the implant with an implant package, an implant providing step of providing an implant packaged into a plasma discharge device having a chamber and a discharge unit therein, and hydrophilic modification of the surface of the implant in a packaged state. A surface treatment step, a gas treatment step of improving the stability of the packaged implant by treating the gas inside the implant package, and a sealing step of sealing the implant package body. By doing so, the bone and/or surrounding tissues can easily adhere to the implant, shortening the period of osseointegration, and improving the initial stability of the implant. It is to provide an implant surface treatment packaging method that can prevent possible biological aging.

An object of the present invention, the surface treatment step is an air extraction step for drawing air from the inside of the implant package, a current application step of generating plasma by applying a current to the discharge unit, and the discharged plasma of the implant in the implant package. An object of the present invention is to provide an implant surface treatment packaging method for modifying an implant surface to be hydrophilic through plasma, including a modification step of modifying the surface to be hydrophilic.

An object of the present invention is that the surface treatment step further includes an electrode connection step of connecting a discharge unit of the plasma discharge device to the implant package body so that a current passes in the implant package body before the current application step, and the electrode connection step is an implant surface treatment packaging method that can be surface-modified in a state in which the implant is packaged by connecting the first conductive part and the discharge part formed of a conductor on at least one side of the implant package to allow current to pass through the implant package. will provide

It is an object of the present invention, in the electrode connection step, a discharge electrode that functions as an electrode connected to a power source is disposed on at least one side of the inner chamber, and the first conductive part is connected to an electrode opposite to the discharge electrode to connect the chamber and implant An object of the present invention is to provide an implant surface treatment packaging method in which plasma can be discharged inside the package.

An object of the present invention is that the electrode connection step connects the second conductive part facing the first conductive part with the discharge part with the implant interposed therebetween, wherein the first conductive part and the second conductive part are each other It is to provide an implant surface treatment packaging method in which plasma is discharged in the implant package by being connected to the opposite electrode.

It is an object of the present invention, wherein the surface treatment step further comprises a contact step of contacting the implant to allow current to pass by approaching the first conductive part to the implant before the current application step, so that the implant can function as an electrode. To provide a packaging method.

An object of the present invention is to provide an implant surface treatment packaging method that prevents damage to the porous structure formed on the implant surface.

An object of the present invention is to accommodate an implant therein, and to include a communication hole formed so that the inside and outside can communicate with each other and a first conductive part provided with a conductive material to allow current to pass through, wherein the communication hole is provided so as to be able to open and close the inside. It is to provide an implant package capable of modifying the surface of the implant accommodated in the plasma.

An object of the present invention is to include an inner conductor extending while having a predetermined width inside the implant package, and an outer conductor protruding outside the implant package while being connected to the inner conductor, wherein the first conducting unit includes the implant package An object of the present invention is to provide an implant package that allows plasma to be generated only within the implant package by allowing current to flow inside and out.

An object of the present invention is to further include a second conductive part facing the first conductive part with an implant interposed therebetween in the implant package, and the second conductive part extends while having a predetermined width inside the implant package. An object of the present invention is to provide an implant package through which electric current can flow from inside and outside the implant package, including an inner conductor that becomes an inner conductor, and an outer conductor that protrudes outside the implant package while being connected to the inner conductor.

An object of the present invention includes an implant package, an implant accommodated in the implant package, and a plasma discharge device for discharging plasma by applying a current therein, wherein the plasma discharge device includes a chamber formed in an internal space, the It is to provide an implant surface treatment packaging system for modifying the surface of the implant accommodated therein to hydrophilicity, including a discharge unit for discharging plasma by applying an electric current into the chamber, and an air withdrawing unit connected to the chamber to draw out air from the chamber. .

The present invention is implemented by an embodiment having the following configuration in order to achieve the above object.

According to an embodiment of the present invention, the present invention provides a packaging step of wrapping the outer edge of the implant with an implant packaging body, an implant providing step of providing an implant packaged in a plasma discharge device having a chamber and a discharge unit therein, and the implant in a packaged state. A surface treatment step of modifying the surface of the implant to be hydrophilic, a gas treatment step of improving the stability of the packaged implant by treating the gas inside the implant package, and a sealing step of sealing the implant package.

According to one embodiment of the present invention, in the present invention, the surface treatment step includes an air extraction step for drawing air from the inside of the implant package, a current application step for generating plasma by applying a current to the discharge unit, and a discharged plasma It is characterized in that it comprises a modification step of modifying the surface of the implant in the implant package to be hydrophilic.

According to an embodiment of the present invention, in the present invention, the surface treatment step further includes an electrode connection step of connecting the discharge unit of the plasma discharge device to the implant package body so that a current flows in the implant package body before the current application step. Including, wherein the electrode connection step is characterized in that at least one side of the implant package by connecting the first conductive part and the discharge part formed of a conductor to allow a current to flow inside the implant package.

According to an embodiment of the present invention, in the electrode connection step, a discharge electrode that is connected to a power source and functions as an electrode is disposed on at least one side of the inner chamber, and the first conductive part is opposite to the discharge electrode It is characterized in that it is connected to the electrode.

According to one embodiment of the present invention, in the present invention, the electrode connecting step connects the second conductive part facing the first conductive part with the discharge part with the implant interposed therebetween, but the first The conductive part and the second conductive part are connected to opposite electrodes.

According to an embodiment of the present invention, the surface treatment step further comprises a contact step of bringing the first conductive part into contact with the implant to allow current to pass therethrough by approaching the first conductive part before the current applying step. .

According to an embodiment of the present invention, the gas treatment step is characterized in that the inside of the implant package is formed in a vacuum by drawing out residual air inside the implant package.

According to an embodiment of the present invention, in the gas treatment step, an inert gas is injected into the implant package.

According to an embodiment of the present invention, in the present invention, in the packaging step, the implant is packaged so that the porous structure formed on the surface of the implant does not face the implant packaging body, but the implant surface having the porous structure is formed into a thin film. It characterized in that it comprises the step of covering.

According to an embodiment of the present invention, in the present invention, in the packaging step, the implant is packaged with an implant package having a plurality of spacers extending with a predetermined height therein, and the implant surface having a porous structure is between the spacers. It is characterized in that the implant packaging body is packaged in a designated position to be positioned in the implant.

According to an embodiment of the present invention, the packaging step comprises disposing a fixing member for fixing the implant in the implant package to the outside of the implant, and packaging the implant together with the fixing member. do it with

According to an embodiment of the present invention, the present invention accommodates an implant therein, and includes a communication hole formed to allow internal and external fluid communication and a first conductive part made of a conductor material to allow current to pass through, the communication hole It is characterized in that it is provided so as to be able to open and close.

According to an embodiment of the present invention, in the present invention, the first conductive part is an inner conductor extending while having a predetermined width inside the implant package, and an outer conductor that is connected to the inner conductor and protrudes outside the implant package. Including, characterized in that the current passes in and out of the implant package.

According to an embodiment of the present invention, the present invention further comprises a second conductive part facing the first conductive part with an implant interposed therebetween in the implant package, wherein the second conductive part is inside the implant package. It characterized in that it comprises an inner conductor extending while having a predetermined width, and an outer conductor protruding outside the implant package while being connected to the inner conductor.

According to an embodiment of the present invention, the present invention includes an implant package, an implant accommodated in the implant package, and a plasma discharge device for discharging plasma by applying a current therein, wherein the plasma discharge device includes an internal It characterized in that it comprises a chamber formed in the space, a discharge unit for discharging plasma by applying a current in the chamber, and an air outlet connected to the chamber to draw air out of the chamber.

According to an embodiment of the present invention, the discharging unit includes a power supply for supplying current and a connection part extending into the chamber from the power supply, wherein the connection part is connected to the implant package and current passes through the implant packaging It is characterized in that the plasma is discharged from the inside of the body.

The present invention can obtain the following effects by the configuration, combination, and use relationship described below with the present embodiment.

The present invention relates to a packaging step of enclosing the outer part of the implant with an implant package, an implant providing step of providing the packaged implant into a plasma discharge device having a chamber and a discharge unit therein, and a surface treatment for modifying the surface of the implant in a packaged state to be hydrophilic. By modifying the surface of the implant to be hydrophilic in a state in which the implant is packaged, including a gas treatment step of treating the gas inside the implant package to improve the stability of the packaged implant, and a sealing step of sealing the implant package, Bone and/or surrounding tissues easily adhere to the implant, shortening the period of osseointegration, thereby improving the initial stability of the implant. Biological aging can be prevented.

In the present invention, the surface treatment step is an air extraction step for drawing air from the inside of the implant package, a current application step for generating plasma by applying a current to the discharge unit, and the discharged plasma to the surface of the implant in the implant package. Including a modification step of modifying to hydrophilicity, the effect of modifying the implant surface to be hydrophilic through plasma is obtained.

In the present invention, the surface treatment step further includes an electrode connection step of connecting a discharge unit of the plasma discharge device to the implant package body so that a current passes through the implant package body before the current application step, and the electrode connection step is By connecting the first conductive part and the discharge part formed of a conductor on at least one side of the implant package to allow current to pass through the implant package, the implant may be surface-modified in a packaged state.

In the present invention, in the electrode connection step, a discharge electrode that is connected to a power source and functions as an electrode is disposed on at least one side of the inner chamber, and the first conductive part is connected to an electrode opposite to the discharge electrode to connect the chamber and the implant package It gives the effect that the plasma can be discharged from the inside.

In the present invention, the electrode connection step connects the second conductive part facing the first conductive part with the discharge part with the implant interposed therebetween, wherein the first conductive part and the second conductive part are opposite to each other. It can be connected to the plasma to be discharged in the implant package.

In the present invention, the surface treatment step has the effect that the implant can function as an electrode by further comprising a contact step of contacting the implant and the current to pass by approaching the first conductive part to the implant before the current applying step.

The present invention is to provide an implant surface treatment packaging method for preventing damage to the porous structure formed on the implant surface.

The present invention accommodates an implant therein, and includes a communication hole formed so that the inside and outside can communicate with each other and a first conductive part provided with a conductor material to allow current to pass through, wherein the communication hole is provided so as to be able to be opened and closed and accommodated therein. The surface of the implant can be modified through plasma.

In the present invention, the first conductive part includes an inner conductor extending while having a predetermined width inside the implant package, and an external conductor that protrudes out of the implant package while being connected to the inner conductor into and out of the implant package. By allowing current to flow, plasma can be generated only within the implant package.

The present invention further includes a second conductive part facing the first conductive part with an implant interposed therebetween in the implant package, wherein the second conductive part extends inside the implant package while having a predetermined width. Provided is an implant package through which current can flow from inside and outside the implant package, including a conductor and an external conductor that protrudes outside the implant package while being connected to the inner conductor.

The present invention includes an implant package, an implant accommodated in the implant package, and a plasma discharge device for discharging plasma by applying a current therein, wherein the plasma discharge device includes a chamber formed in an internal space, and a chamber in the chamber It is possible to obtain the effect of modifying the surface of the implant accommodated therein to be hydrophilic, including a discharge unit for discharging plasma by applying an electric current, and an air withdrawing unit connected to the chamber to draw out air from the chamber.

1 is a view showing the stability after implantation of the implant;
Figure 2 is a flow chart of the implant surface treatment packaging method according to the present invention
3 is a view showing that the implant package 50 is provided to the plasma discharge device 10 in the implant surface treatment packaging method (S) according to the present invention
4 is a cross-sectional view of a plasma discharge device 10 according to an embodiment of the present invention.
5 is a cross-sectional view of a plasma discharge device 10 according to an embodiment of the present invention.
6 is a view of an implant 30 according to an embodiment of the present invention.
7 is a view showing a state in which the implant is accommodated in the implant package according to an embodiment of the present invention;
8 is a view showing a state in which the implant is accommodated in the implant package according to another embodiment of the present invention;
9 is a view showing a state in which the implant is accommodated in the implant package according to another embodiment of the present invention;
10 is a view showing that the implant is accommodated together with the fixing member in the implant package according to an embodiment of the present invention;
11 is a view showing that the thin film 63 and the spacer 65 are applied in the implant package according to an embodiment of the present invention.
12 is a flowchart of a packaging step (S10) according to an embodiment of the present invention;
13 is a flowchart of a surface treatment step (S30) according to an embodiment of the present invention;
14 is a flowchart of a gas treatment step (S50) according to an embodiment of the present invention;

Hereinafter, preferred embodiments of the implant surface treatment packaging method according to the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, if it is determined that a detailed description of a well-known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. Unless otherwise defined, all terms in this specification have the same general meaning as understood by those of ordinary skill in the art to which the present invention belongs, and in case of conflict with the meaning of the terms used in this specification, the According to the definition used in the specification.

Throughout the specification, when a part "includes" a certain component, it does not exclude other components unless otherwise stated, and it means that other components may also be further included, The described terms such as “~ unit” mean a unit that processes at least one function or operation. In addition, when it is said to be "connected" between certain components, it is not limited to being fastened in direct contact with each other, but includes fastening through other components, and can transmit a predetermined force or energy even if it is not fastened. It may mean that it is placed so that Hereinafter, the present invention will be described in detail by describing preferred embodiments of the present invention with reference to the accompanying drawings.

Figure 2 is a flow chart of the implant surface treatment packaging method (S) according to an embodiment of the present invention. The implant surface treatment packaging method (S) improves the initial stability of the implant by modifying the surface of the implant to be hydrophilic while the implant is packaged, so that the bone and/or surrounding tissues easily adhere to the implant, shortening the period of osseointegration, and improving the initial stability of the implant. After surface treatment of the implant, it is possible to prevent biological aging that may occur due to exposure to air by making the implant not exposed to the air and is blocked from the outside air. The implant surface treatment packaging method (S) includes a packaging step (S10), an implant providing step (S20), a surface treatment step (S30), a gas treatment step (S50) and a sealing step (S70).

Prior to explaining the implant surface treatment packaging method (S) below, with reference to FIGS. 3 to 10, the plasma discharge equipment 10 and the implant 30 used in the implant surface treatment packaging method (S), the implant packaging body ( 50) and the reinforcing element 60 will be described. The implant 30 is supplied without being exposed to the air in a hydrophilic surface-treated state after being sealed and sealed after being modified to be hydrophilic by the plasma generated in the plasma discharge device 10 while being accommodated or packaged in the implant package 50 . can be The plasma discharge device 10 is provided to discharge plasma in the chamber and accommodates the implant 30 and the implant package 50 to modify the surface of the implant to be hydrophilic through plasma discharge from the inside. As shown in FIG. 3 , the implant 30 is accommodated in the plasma discharge device 10 during surface treatment through hydrophilic modification, and at least one implant may have a hydrophilic surface modified in the plasma discharge device 10 . have. The plasma discharge device 10 includes a housing 11 , a chamber 12 , a discharge unit 13 , and an air outlet 15 .

3 to 5, the housing 11 constitutes the overall appearance of the plasma discharge device 10, and forms an opening on one side and closes the opening by operating a button, etc. The chamber 12 formed in the space may be provided to be sealed. The housing 11 preferably has a predetermined size so that the implant 30 and the implant package 50 used for artificial joint surgery are accommodated therein.

The chamber 12 is formed in the inner space of the plasma discharge device 10 and can be blocked from the outside by being sealed by the housing 11 . The implant 30 and the implant package 50 to be described later are accommodated in the chamber 12, and plasma is discharged by an electric current in the chamber 12, so that the surface of the implant can be modified to be hydrophilic. The atmospheric pressure inside the chamber 12 may be lowered to close to vacuum by an air outlet 15 to be described later, and preferably, a pressure of about 3 torr may be maintained.

The discharge unit 13 is provided so that current can be applied inside the plasma discharge device 10 . Plasma may be generated in the chamber 12 by the discharge unit 13 applying a current. Surface of the implant accommodated in the plasma discharge device 10 In a preferred embodiment of the present invention, the implant product 30 is accommodated in the chamber 12, wherein the plane of the implant product 30 or the implant product 30 is orthogonally projected. A discharge unit having a size corresponding to or larger than the area may be formed. When a current is applied to the discharge unit 13 through an external power source, the discharge unit 13 functions as an electrode to discharge plasma in the chamber 12 . The discharge unit 13 includes a power source 131 , a connection unit 133 , and a discharge electrode 135 .

The power source 131 may generate plasma by supplying current to the connection part 133 and the discharge electrode 135, which will be described later. The power source 131 may be connected to the connection part 133 and the discharge electrode 135 through a wire or the like. Plasma discharge may be DC glow discharge through direct current, AC or RF glow discharge through AC voltage application. In a preferred embodiment of the present invention, the power source 131 applies a high-voltage current to the discharge electrode 135 and the connection part 133 in alternating current so that plasma can be discharged in the chamber 12 in a state close to vacuum. . As will be described later, in another embodiment of the present invention, current is applied so that the two connection parts 133a and 133b that grip or contact the implant package 50 function as different electrodes within the implant package 50 . Plasma can also be generated.

Referring to FIG. 4 , the connection part 133 extends from one side of the plasma discharge device 10 to hold the implant package 50 or to be connected to the implant package 50 by contacting the implant package 50 . can The connection part 133 may be provided to extend from the power source 131 into the chamber 12 . The connection part 133 may be connected to the conductive part 53 of the implant package 50 to allow current to pass therethrough, as will be described later. For this, the connection part 133 may be formed to extend from one side of the chamber to the inside of the chamber as shown in FIG. can be The connection part 133 may have the shape of a clamp connected to the power supply 131 in current communication. In addition, the connection part 133 may be provided detachably from the housing 11 . The connection part 133 may be made of a metal material.

Referring to another embodiment of the present invention shown in FIG. 5 , a plurality of the connection parts 133 may be provided in the housing 11 . While the first connection portion 133a is provided substantially the same as the above-described connection portion 133, the second connection portion 133b extends from the other side inside the plasma discharge device 10 instead of the discharge electrode 135 to be described later. It is provided to be connected to the implant package 50 . The second connection part 133b is configured to be in contact with the external conductor 533 made of a conductive material or to grip the external conductor 533 similarly to the first connection part 133a, and to the first connection part 133a as an electrode. It may be connected to the power source 131 to function.

The discharge electrode 135 is provided to face the chamber 12 from one side of the inside of the plasma discharge device 10 . The discharge electrode 135 preferably extends over a larger area than the implant or implant 30 in which the chamber 12 is accommodated. The discharge electrode 135 is formed of a conductor through which current can flow, and may have a metal plate having a predetermined width or a bent metal plate. Referring back to FIG. 4 , the discharge electrode 135 and the connection part 133 may function as an electrode when a current is applied, and preferably function as an anode and a cathode, so that the gas in the chamber under a predetermined pressure is converted to plasma. ionized. The discharge electrode 135 may be provided to face and face the connection part 133 . If the discharge electrode 135 is provided on one side surface of the chamber 12 , the connection part 133 may be provided while facing the inside from the opposite side surface of the chamber 12 . In another embodiment of the present invention, the discharge electrode 135 and the connecting portion 133 may be provided so as not to face each other.

The air outlet 15 may be connected to the chamber 12 of the plasma discharge device to extract or supply air from the chamber 12 . The air outlet 15 may have a tube-like shape and may be connected to fluid communication with the chamber 12 . The air outlet 15 may lower the atmospheric pressure of the chamber 12 to close to vacuum by withdrawing the gas from the chamber 12 to the outside or a space configured separately from the chamber 12 through a vacuum pump or the like. The gas in the chamber 12 whose atmospheric pressure is lowered by the air outlet 15 may be ionized into plasma when a current is applied to the discharge electrode 135 and the connection part 133 .

In addition, in the plasma discharge device 10, a connection tube (not shown) in order to extract air in the implant package through a communication hole 51 in the implant package 50 to be described later or to inject an inert gas into the implant package. may further include. The air inside the implant package is evacuated through the communication hole 51 so that the implant 30 is vacuum-packed or an inert gas is filled in the implant package so that the implant can be supplied while being preserved. This will be described later.

Referring to FIG. 6 , the implant 30 is provided in the plasma discharge device 10 so that the surface of the implant can be modified to be hydrophilic by the plasma discharged in the chamber 12 . The implant 30 may be provided in the plasma discharge device 10 while being accommodated in the implant package 50 . The implant 30 may be a dental implant, but is preferably accommodated in the implant package 50 having a predetermined size as an implant used in an artificial joint. The surface of the implant 30 may be modified in a state accommodated in the implant package 50 , that is, not exposed to the chamber 12 of the plasma discharge device 10 . The implant may be made of a conductive material, preferably titanium, so that when a current is applied after being connected to conduct a current, the implant functions as an electrode and the air in the chamber 12 or implant package 50 is ionized to generate plasma. can

The implant 30 may include a porous structure 31 on the surface. Implants made of only titanium, titanium alloy, or chromium cobalt alloy have a problem in that the initial bonding time with bone is long when transplanting into the human body, so the probability of operation failure increases during the procedure. The porous structure may increase the porosity on the surface of the implant to promote osseointegration into the pore while increasing the adhesion between the implant and the porous structure. The porous structure 31 may be configured by forming a porous coating layer through a metal powder on the implant metal surface. The metal powder used may be a biocompatible material powder such as titanium or titanium alloy powder or cobalt chromium powder. Accordingly, when the implant 30 is implanted, it is possible to increase the bonding force with the bone using the growth of the bone into the void. The distribution of the porous structure 31 may vary depending on the shape of the implant and the design for implantation.

It will be described that the implant package 50 and the implant 30 are accommodated in the implant package 50 and packaged according to an embodiment of the present invention with reference to FIGS. 7 to 8 . The implant package 50 is provided to accommodate the implant 30 and wrap around the outside of the implant 30 , and may be provided into the plasma discharge device 10 while accommodating the implant 30 . The implant package 50 may be provided in a state such that at least a portion of the outside and the inside can pass current, so that it is connected to the discharge unit 13 in the plasma discharge device 10 so that the current is applied. In an embodiment of the present invention, the implant package 50 may allow the surface of the implant inside to be modified to be hydrophilic through plasma discharge. The implant package 50 may be formed of a flexible bag. The implant package 50 has an inlet on one side to accommodate the implant 30 , and after receiving the implant 30 , the inlet may be compressed and sealed. The implant package 50 may include a communication hole 51 and a conductive part 53 .

The communication hole 51 is provided with a hole formed so that the inside and outside of the implant packaging body 50 can communicate with each other in fluid communication, so that the air inside the implant packaging body 50 is drawn out or air is injected into the communication hole 51 through the communication hole 51 . make it possible The communication hole 51 may be selectively opened and closed. The communication hole 51 is connected to a separate device before the implant package 50 accommodating the implant 30 is provided into the plasma discharge device 10 to extract the air inside the implant package 50 to package the implant. The inside of the body can be made close to a vacuum, and the implant package 50 containing the implant 30 is provided into the plasma discharge device 10 and then connected to a connection tube (not shown) to remove air inside. . When the surface of the implant 30 accommodated therein is modified to be hydrophilic, all residual air in the implant package 50 is drawn out through the communication hole 51 to form the implant package 50 in a vacuum state, An inert gas may be injected into the implant package 50 . This will be described later in the gas storage step (S50). After the gas treatment step (S50), the communication hole 51 may be closed so that the implant package 50 may be sealed.

The conductive part 53 is made of a conductor material formed from the inside to the outside of the implant package body 50 so that the current passes through the implant package body 50, and is a power source 131 by the above-described connection part 133. ) can be associated with The conductive part 53 may function as an electrode in the current application step S37 to be described later. At least one conductive part 53 may be provided. Accordingly, the conductive part 53 may include the first conductive part 53a and may additionally include the second conductive part 53b. The conductive part 53 may include an inner conductor 531 and an outer conductor 533 .

The inner conductor 531 is provided so that current can pass inside the implant package 50 . The inner conductor 531 preferably has a shape of a conductor post or a conductor plate extending while having a predetermined width. The inner conductor 531 may be connected to the outer conductor 533 to allow current to flow inside and outside the implant package, but is formed substantially integrally with the outer conductor 533 and extends while penetrating the implant package 50 . configuration may be.

The external conductor 533 is a conductor that protrudes to the outside of the implant package 50, and preferably has a predetermined shape so as to be gripped or contacted from the outside. As shown in FIGS. 4 and 5 , the external conductor 533 is held by the connection part 133 or comes into contact with the connection part 133 to transmit the current applied from the power source 131 to the internal conductor 531 . Thus, the plasma discharge may be performed in the implant package 50 .

In one embodiment of the present invention, as can be seen in FIG. 7 , the conductive part 53 may be provided on one side of the implant package 50 . Accordingly, only the first conductive part 53a is provided in the implant package 50 so that the first conductive part 53a functions as an electrode in the surface treatment step S30 to be described later, so that the surface of the implant can be modified to be hydrophilic. In another embodiment of the present invention shown in FIG. 8 , a second conductive part 53b may be additionally provided on the other side of the implant package 50 . Accordingly, it may be performed in the surface treatment step (S30) to be described later. In addition, the connection part 133 is connected to one of the first conductive parts 53a and the second conductive part 53b, so that only one conductive part functions as an electrode, and the power source 131 together with the discharge electrode 135 Plasma discharge is possible through DC or AC voltage application.

Additionally, in another embodiment of the present invention shown in FIG. 9 , the implant package 50 may include a transmission part 50a formed of a material through which plasma can pass, at least in part. The transmissive part through which the plasma can pass may be provided with a moisture permeable paper. Moisture inside may be discharged to the outside through the transmission part 50a, and the discharged plasma may pass through the moisture permeable paper and proceed toward the implant 30. The transmission portion 50a may be provided on both sides of the implant rather than in one direction.

In addition, the implant package 50 may include a shielding portion 50b formed of a material that does not allow plasma to pass through at least another portion thereof. The shielding part 50b surrounds another part of the implant 30 and may constitute a packaging of the implant 30 . The shielding part 50b may be made of plastic, and preferably, may be a blister packaging made of a PET (polyethylene terephthalate) or PVC (polyvinyl chloride) plastic pack. The shielding part 50b may have an atypical shape, and may have a shape that is substantially complementary to the implant 30 accommodated therein. At least a portion of the transmission portion 50a and the shielding portion 50b may be provided to be detachable from each other. In a preferred embodiment of the present invention, the permeable portion 50a formed of moisture permeable paper may be provided to be removable from the shielding portion 50b formed of plastic.

When the reinforcing element 60 of the present invention is described with reference to FIGS. 10 to 11 , the reinforcing element 60 is a packaging step (S10) to be described later in order to prevent damage to the implant 30 in the implant package 50. ) in a configuration that is packaged by the implant package 50 together with the implant 30 . The implant 30 includes a porous structure 31 on the surface as described above, which may be broken by an external impact or damaged by friction with the implant packaging body 50, and the implant 30 itself may be damaged by external impact. In order to prevent this, the reinforcing element 60 may include a fixing member 61 , a thin film 63 , and a spacer 65 .

Referring to FIG. 10 , the fixing member 61 may be provided to fix the implant in the implant package. The fixing member 61 may be composed of a plurality of elements, but as a single element connected to each other, the implant 30 is placed between the implant 30 and the implant package 50 for packaging the implant 30 . It can also be fixed. The fixing member 61 functions as a filler and a reinforcing material to prevent movement or shaking of the implant 30 .

The fixing member 61 may be formed while having a structure through which plasma can pass. The fixing member 61 is formed by a set of a plurality of elements spaced apart from each other so that plasma can flow into the space between the fixing members. It may have a void and/or an empty space so as to be able to communicate up to the implant 30 of the .

Referring to FIG. 11 , the thin film 63 may be provided to cover the porous structure 31 of the implant surface. A thin film 63 having an area corresponding to the porous structure 31 formed on the surface of the implant 30 may be prepared, and in the process of packaging the implant, the thin film 63 is applied corresponding to the position where the porous structure 31 is formed. can be The thin film 63 is preferably provided to be detachable from the surface of the implant 30 . In one embodiment of the present invention, the thin film may be provided so that one surface of the fiber material has an adhesive force so that a user can peel the thin film 63 from the implant surface.

The spacer 65 is provided inside the implant package 50 and has a predetermined height and is formed to extend. A plurality of the spacers 65 may be provided in the implant package 50 . The spacer 65 may extend from the inner surface of the implant package 50 to the inside in which the implant 30 is accommodated. It is possible to prevent the porous structure 31 from being damaged when the porous structure 31 comes into contact with the implant packaging body 50 during packaging or from damage to the implant packaging body 50 . At this time, the spacer 65 should be packaged to match the position designated so that the position corresponds to the porous structure 31 in the packaging step (S10). Therefore, the implant surface having the porous structure 31 is positioned between the spacers 65, so that damage to the porous structure 31 after packaging can be prevented.

In another embodiment of the present invention, the fixing member 61 may have substantially the same configuration as the spacer 65 . The spacer 65 extending from the inner surface of the implant package to the inside in which the implant is accommodated may be configured with a plurality of elements to constrain the displacement of the implant within the implant package.

When the implant surface treatment packaging method (S) according to the present invention is described again with reference to FIGS. 2 and 12 to 14 , the packaging step (S10) is to wrap the outside of the implant 30 with the implant package body 50 As a step, the implant 30 whose surface is not modified to be hydrophilic is accommodated in the implant package 50 . The packaging step (S10) may be packaged so that the porous structure 31 formed on the surface of the implant 30 does not face the implant packaging body 50 . In addition, in one embodiment of the present invention, the implant 30 may be packaged using the implant package 50 in which the spacer 65 is formed, in which case the spacer 65 is positioned around the porous structure 31 . The packaging step (S10) may be performed at a designated location so that the porous structure 31 is positioned between the spacers by packaging. The packaging step (S10) may include a fixing member arrangement step (S11), a thin film application step (S13), a packaging location designation step (S14), and a step (S15) of packaging the implant together with the fixing member.

12, the fixing member arrangement step (S11) is a step of disposing the fixing member 61 around the implant 30, the fixing member 61 is the implant 30 and the implant packaging body (50) The shaking or displacement of the implant 50 is restrained between the implants 30 so that the implant 30 is not damaged during surface treatment and transportation.

The thin film application step (S13) is a process of applying the thin film 63 to the porous structure 31 formed on the surface of the implant 30, by applying or attaching a thin film detachable from the implant surface to the porous structure 31 It is possible to prevent damage to the porous structure 31 . This can be confirmed in FIG. 11 .

The packaging location designation step (S14) is a step that can be performed when the implant 30 is packaged with the implant package 50 having the spacer 65 formed thereon, and the implant package 50 is the implant 30 . It is a step of designating the position of the implant packaging body in the packaging step (S10) to be packaged at the designated location. In detail, the packaging position of the implant package 50 provided with the spacer 65 may be designated so that the spacer 65 is packaged in the implant 30 at the designated position. The position of the spacer 65 may be designated during packaging to correspond to the position of the porous structure 31 formed on the implant surface. Accordingly, during packaging, the implant surface having the porous structure 31 is positioned between the spacers 65 to prevent the porous structure 31 from being damaged by the implant package body 50 . Therefore, in an embodiment of the present invention, in the packaging step (S10), the implant 30 is packaged with the implant package 50 having a plurality of spacers 65 extending with a predetermined height therein, and the porous structure The implant packaging body may package the implant at a designated position so that the implant surface having the (31) is positioned between the spacers (65).

The step (S15) of packaging the implant together with the fixing member is a step of packaging the implant 30 through the implant packaging body 50, and the implant 30 together with the disposed fixing member has a porous structure 31 formed therein. A thin film may be applied to the surface. In addition, the implant may be packaged together with the fixing member by the implant packaging body 50 having the spacer 65 .

In another embodiment of the present invention, the implant 30 may be packaged by the implant packaging body 50 without the fixing member 61 without going through the fixing member arrangement step (S11).

The implant providing step (S20) is a step of providing the implant package 50 accommodating the implant 30 in the plasma discharge device 10, and the surface of the packaged implant is discharged in the plasma discharge device 10. It can be modified to be hydrophilic through plasma. In one embodiment of the present invention, the transmission portion 50a provided to allow the plasma of the implant package 50 to pass through may be provided to face the discharge electrode 135 .

Referring to FIG. 13 , the surface treatment step ( S30 ) is a step of modifying the surface of the implant in a packaged state to be hydrophilic, and carbon formed on the surface of the implant may be removed through plasma generated by applying an electric current. The surface treatment step (S30) is preferably performed in a state that the implant 30 is accommodated in the implant package (50). The surface treatment step (S30) may include at least one of an air drawing step (S31), a contact step (S33), an electrode connection step (S35), a current application step (S37), and a reforming step (S39).

The air extraction step (S31) is a step of withdrawing the air inside the implant package body 50, and the internal gas is plasma in the current application step (S37) to be described later by forming the atmospheric pressure inside the implant package body 50 close to vacuum. to be ionized into In one embodiment of the present invention, in the step of withdrawing the air (S31), the implant package body 50 containing the implant is provided to the inside of the plasma discharge device 10 before the air in the implant package body is provided through the communication hole 51. can be withdrawn. In another embodiment of the present invention, the air withdrawing step (S31) is performed by connecting the connecting tube to the communication hole 51 after the implant package 50 accommodating the implant is provided to the inside of the plasma discharge device 10 to perform the implant. By removing the air inside the package 50, it can be made close to a vacuum. In one embodiment of the present invention, the atmospheric pressure in the implant package may be formed in a range of 3 torr to 10 torr. In an embodiment of the present invention, in the air withdrawing step (S31), the air in the chamber 12 is drawn through the air outlet 15 of the plasma discharge device 10 so that the internal atmospheric pressure of the chamber 12 approaches a vacuum. can be pulled out As shown in FIG. 4 , when the connection part 133 is connected to one side of the implant package 50 and the discharge electrode 135 functions as an electrode in the electrode connection step S35 to be described later, plasma discharge in the chamber 12 is performed. For this, the chamber 12 may be formed close to vacuum through the air outlet 15 . When the plasma is discharged only in the implant package 50 , the pressure inside the implant package 50 may be lowered in the air extraction step S31 .

The contacting step S33 is a process of bringing the first conductive part 53a or the conductive part 53 closer to the implant before applying a current (S37), which will be described later, to contact the implant so that current flows. When the inner conductor 531 extended inside the implant package 50 comes into contact with the surface of the implant 30 , a current flows through the implant 30 so that the implant functions as an electrode. The contacting step (S33) may be selectively performed. When the contact step S33 is absent, the inner conductor 531 may function as an electrode.

The electrode connection step (S35) is a process of connecting an electrode to the implant package body so that current passes through the implant package body (50). The electrode connection step (S35) may be performed before the current application step (S37), and the discharge unit 13 of the plasma discharge device is connected to the implant package body 50 so that a current flows in the implant package body 50 . can do it In one embodiment of the present invention, the connection part 133 connected to the power source 131 holds the conductive part 53, preferably the external conductor 533 of the implant package 50 provided in the plasma discharge device 10, or This can be achieved by contacting In the electrode connection step (S35), the first conductive part 53 formed of a conductor on at least one side of the implant package 50 and the discharge unit 13 are connected so that a current flows inside the implant package body 50 . can do. Preferably, as shown in FIG. 4 , the connection part 133 holds the external conductor 533 on the opposite side of the discharge electrode 135 to allow current to flow from the power source 131 into the implant package 50 . In an embodiment of the present invention, in the electrode connection step (S35), a discharge electrode 135 that is connected to a power source and functions as an electrode is disposed on at least one side of the inner chamber, and the first conductive part 53 is connected with the discharge electrode. This can be achieved by connecting the opposite electrode. In another embodiment of the present invention, as shown in FIG. 5 , the first connecting portion 133a and the second connecting portion 133b are connected to the first and second conductors 53a and 53b on both sides of the implant package 50 and It may be connected to allow current to flow into the implant package. In another embodiment of the present invention, the second conductive part 53b facing the first conductive part 53a is connected to the discharge part 13 with the implant 30 interposed therebetween in the implant package 50, The first conductive portion 53a and the second conductive portion 53b may be connected to opposite electrodes to each other.

The current application step (S37) is a process of generating plasma by applying a current to the plasma discharge equipment. By applying a current to the discharge electrode 135 and the connection part 133, or the first connection part 133a and the second connection part 133b, the gas and/or implant package 50 in the chamber 12 in a state close to vacuum. It causes the gas inside to be ionized into plasma. DC glow discharge through DC or AC or RF glow discharge through application of AC voltage may be performed. In a preferred embodiment of the present invention, a high-voltage current is applied to the discharge electrode 135 and the connection unit 133 as AC. By doing so, plasma can be discharged in the chamber 12 and the implant package 50 in a state close to vacuum. In one embodiment of the present invention, even if the implant is blocked from the outside by the implant package 50, as a strong voltage is applied between the inner conductor 531 and the discharge electrode 135, The gas may be ionized to create a plasma. Through the contact step (S33), the implant 30 in the implant package 50 functions as an electrode, and as a current is applied between the implant 30 and the discharge electrode 135, the gas inside is ionized to generate plasma. have.

The reforming step (S39) is a process in which the discharged plasma modifies the surface of the implant 30 to be hydrophilic. In a preferred embodiment of the present invention, oxygen in the chamber 12 may be ionized to generate a plasma including ozone. Plasma removes carbon on the titanium surface from the inside of the implant package 50 so that the surface of the implant may be modified to be hydrophilic. In another embodiment of the present invention, when the implant package 50 is composed of a transmission portion 331 through which plasma can pass and a shielding portion 50b through which plasma cannot pass, the gas in the chamber 12 is The plasma formed by ionization flows by an electric field between the discharge electrode 135 and the connection part 133. In this process, the transmissive part 331 of the first package 33 allows the plasma to pass through it, so that the plasma flows through the first It can proceed to the interior of the packaging (33). Furthermore, since the shielding part 50b is formed of a material through which plasma cannot pass, the surface of the implant may be further modified by the plasma returning after colliding with the shielding part 50b.

Referring to FIG. 14 , the gas treatment step ( S50 ) is a step for improving the stability of the packaged implant by treating the gas inside the implant package, and may be performed after the surface treatment step ( S30 ). The gas treatment step (S50) may be performed in a state that the implant package 50 is accommodated in the plasma discharge device (10). Gas treatment step (S50) may be performed after taking out the implant package 50 from the plasma discharge device (10). The gas treatment step (S50) may be achieved by extracting or injecting gas through the communication hole 51 of the implant package. The gas treatment step (S50) may include at least one of a vacuum forming step (S51) and an inert gas filling step (S53).

The vacuum forming step (S51) is a step of forming a vacuum inside the implant package by drawing out residual air inside the implant package. The inside of the implant package 50 may be formed in a vacuum by drawing out the air inside through the communication hole 51 . Through this, the surface of the implant 30 inside the implant package 50 can be prevented from biological aging due to contact with air. In one embodiment of the present invention, even if a vacuum is formed inside the implant package 50, direct contact between the implant surface and the implant package 50 by the fixing member 61 can be prevented.

The inert gas filling step (S53) is a step of injecting an inert gas into the plant package. This can be achieved by injecting an inert gas such as argon or neon into the implant package through the communication hole 51 . Through this, the surface of the implant 30 inside the implant package 50 can be prevented from biological aging due to contact with air.

In addition, in one embodiment of the present invention, a small amount of inert gas is filled inside through the inert gas filling step (S53) after taking out the residual air inside the implant package 50 through the vacuum forming step (S51) and making a vacuum state. Thus, the implant 30 may be protected.

The sealing step (S70) is a step of sealing the gas-treated implant package body 50, and is a step of occluding the implant package body 50 so that external air cannot enter the implant package body 50. The sealing step (S70) may be achieved by closing the communication hole 51, and may seal the implant package body 50 by pressing and bonding the entrance of the implant package body 50. Accordingly, the surface of the implant 30 modified to be hydrophilic can be supplied while being sealed by the implant packaging body 50 in a vacuum state or surrounded by an inert gas to prevent a decrease in the hydrophilicity of the surface.

The above detailed description is illustrative of the present invention. In addition, the above description shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed herein, the scope equivalent to the written disclosure, and/or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in specific application fields and uses of the present invention are possible. Accordingly, the detailed description of the present invention is not intended to limit the present invention to the disclosed embodiments. Also, the appended claims should be construed as including other embodiments.

S: Implant surface treatment packaging method
S10: Packing step S20: Implant providing step
S30: surface treatment step S31: air extraction step (S31)
S33: contact step S35: electrode connection step
S37: current application step S39: reforming step
S50: gas treatment step S70: sealing step
10: plasma discharge equipment 11: housing
12: chamber 13: discharge unit
131: discharge electrode 133: connection part
15: air outlet
30: implant 31: porous structure
50: implant packaging body 51: communication hole
53: conduction unit 531: inner conductor
533: external conductor

Claims (18)

A packaging step of wrapping the outside of the implant with an implant package, an implant providing step of providing the packaged implant into a plasma discharge device having a chamber and a discharge unit inside, a surface treatment step of modifying the surface of the implant in a packaged state to be hydrophilic, and implant packaging An implant surface treatment packaging method comprising: a gas treatment step of improving the stability of the packaged implant by treating the gas inside the body; and a sealing step of sealing the implant package body. According to claim 1, wherein the surface treatment step is an air extraction step for drawing air from the inside of the implant package, a current applying step of generating plasma by applying a current to the discharge unit, and the discharged plasma of the implant in the implant package. Implant surface treatment packaging method comprising a modification step of modifying the surface to be hydrophilic. The method of claim 2, wherein the surface treatment step further comprises an electrode connection step of connecting a discharge unit of the plasma discharge device to the implant package body so that a current passes through the implant package body before the current application step,
In the electrode connection step, the implant surface treatment packaging method, characterized in that by connecting the first conductive part and the discharge part formed of a conductor on at least one side of the implant package body to allow current to flow inside the implant package body. 4. The method of claim 3, wherein in the electrode connection step, a discharge electrode that is connected to a power source and functions as an electrode is disposed on at least one side of the inner chamber, and the first conductive part is connected to an electrode opposite to the discharge electrode. Implant surface treatment packaging method. The method according to claim 3, wherein the electrode connection step connects the second conductive part facing the first conductive part with the discharge part with the implant interposed therebetween, wherein the first conductive part and the second conductive part are each other Implant surface treatment packaging method, characterized in that connected to the opposite electrode. According to claim 2, wherein the surface treatment step is implant surface treatment packaging method, characterized in that it further comprises a contact step of bringing the first conductive part to the implant and contacting the implant so that an electric current passes before the step of applying the current. According to claim 1, wherein the gas treatment step is implant surface treatment packaging method, characterized in that by drawing the residual air inside the implant package to form a vacuum inside the implant package. According to claim 1, wherein the gas treatment step implant surface treatment packaging method, characterized in that by injecting an inert gas into the implant packaging body. According to claim 1, wherein the packaging step implant surface treatment packaging method, characterized in that the packaging of the implant so that the porous structure formed on the surface of the implant does not face the implant packaging body. 10. The method of claim 9, wherein the packaging step comprises the step of covering the implant surface having the porous structure with a thin film. 10. The method of claim 9, wherein the packaging step has a predetermined height inside the implant package having a plurality of spacers extending, the implant is packaged, and the implant package body so that the implant surface having a porous structure is located between the spacers. Implant surface treatment packaging method, characterized in that packaging the implant at a designated location. 10. The method of claim 9, wherein the packaging step comprises disposing a fixing member for fixing the implant in the implant package outside the implant, and packaging the implant together with the fixing member. . An implant packaged and surface-treated by the method of any one of claims 1 to 12. Accommodating the implant therein, including a first conductive part provided with a conductive material to allow current to pass through a communication hole formed so that the inside and outside can communicate with each other,
The communication hole is an implant package, characterized in that it is provided so as to be able to open and close. The implant package according to claim 14, wherein the first conductive part includes an inner conductor extending while having a predetermined width inside the implant package, and an outer conductor connected to the inner conductor and protruding outside the implant package. Implant package, characterized in that it allows current to pass inside and outside. The method according to claim 15, further comprising a second conductive part facing the first conductive part with an implant interposed therebetween in the implant package,
The second conductive part implant package, characterized in that it includes an inner conductor extending while having a predetermined width inside the implant package, and an external conductor that is connected to the inner conductor and protrudes outside the implant package. The implant package of any one of claims 14 to 17, comprising an implant accommodated in the implant package, and a plasma discharge device for discharging plasma by applying a current therein,
The plasma discharge device includes a chamber formed in the inner space, a discharge unit for discharging plasma by applying a current in the chamber, and an air outlet connected to the chamber to draw air out of the chamber. processing packaging system. The method of claim 17, wherein the discharging unit comprises a power supply for supplying current and a connection unit extending from the power source into the chamber,
The connection part is connected to the implant package and the current passes through the implant surface treatment packaging system, characterized in that for discharging plasma inside the implant package.

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