KR20220116182A - 마이크로 엘이디 전사 방법 및 마이크로 엘이디 전사 장치 - Google Patents

마이크로 엘이디 전사 방법 및 마이크로 엘이디 전사 장치 Download PDF

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Publication number
KR20220116182A
KR20220116182A KR1020227020539A KR20227020539A KR20220116182A KR 20220116182 A KR20220116182 A KR 20220116182A KR 1020227020539 A KR1020227020539 A KR 1020227020539A KR 20227020539 A KR20227020539 A KR 20227020539A KR 20220116182 A KR20220116182 A KR 20220116182A
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KR
South Korea
Prior art keywords
carrier substrate
micro leds
material layer
micro
adhesive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020227020539A
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English (en)
Korean (ko)
Inventor
유익규
이정재
Original Assignee
서울바이오시스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/122,995 external-priority patent/US11521887B2/en
Application filed by 서울바이오시스 주식회사 filed Critical 서울바이오시스 주식회사
Publication of KR20220116182A publication Critical patent/KR20220116182A/ko
Withdrawn legal-status Critical Current

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    • H01L21/52—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H01L21/67144—
    • H01L21/6835—
    • H01L25/0753—
    • H01L33/0095—
    • H01L33/62—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68322—
    • H01L2221/68354—
    • H01L2221/68368—
    • H01L2933/0066—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H10P72/7414—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020227020539A 2019-12-18 2020-12-16 마이크로 엘이디 전사 방법 및 마이크로 엘이디 전사 장치 Withdrawn KR20220116182A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962949701P 2019-12-18 2019-12-18
US62/949,701 2019-12-18
US17/122,995 2020-12-15
US17/122,995 US11521887B2 (en) 2019-12-18 2020-12-15 Method of transferring micro LED and micro LED transferring apparatus
PCT/KR2020/018414 WO2021125775A1 (ko) 2019-12-18 2020-12-16 마이크로 엘이디 전사 방법 및 마이크로 엘이디 전사 장치

Publications (1)

Publication Number Publication Date
KR20220116182A true KR20220116182A (ko) 2022-08-22

Family

ID=76253011

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227020539A Withdrawn KR20220116182A (ko) 2019-12-18 2020-12-16 마이크로 엘이디 전사 방법 및 마이크로 엘이디 전사 장치

Country Status (4)

Country Link
EP (1) EP4080550A4 (enExample)
JP (1) JP2023507820A (enExample)
KR (1) KR20220116182A (enExample)
CN (2) CN213424968U (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113764546A (zh) * 2021-08-30 2021-12-07 东莞市中麒光电技术有限公司 一种Mini-LED器件、LED显示模块及其制作方法
CN115763644A (zh) * 2022-11-17 2023-03-07 闻泰通讯股份有限公司 芯片转移方法
JPWO2024203435A1 (enExample) * 2023-03-29 2024-10-03

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101596386B1 (ko) * 2011-11-18 2016-02-22 애플 인크. 전기 절연 층을 갖는 마이크로 led 구조체 및 마이크로 led 구조체들의 어레이를 형성하는 방법
CN105493297B (zh) * 2015-05-21 2018-09-11 歌尔股份有限公司 微发光二极管的转移方法、制造方法、装置和电子设备
WO2017008254A1 (en) * 2015-07-14 2017-01-19 Goertek. Inc Transferring method, manufacturing method, device and electronic apparatus of micro-led
WO2017028207A1 (en) * 2015-08-18 2017-02-23 Goertek.Inc Pre-screening method, manufacturing method, device and electronic apparatus of micro-led
US10181546B2 (en) * 2015-11-04 2019-01-15 Goertek.Inc Transferring method, manufacturing method, device and electronic apparatus of micro-LED
US10325893B2 (en) * 2016-12-13 2019-06-18 Hong Kong Beida Jade Bird Display Limited Mass transfer of micro structures using adhesives
KR20180075310A (ko) * 2016-12-26 2018-07-04 주식회사 엘지화학 마이크로 전기 소자의 전사 방법
JP2019015899A (ja) * 2017-07-10 2019-01-31 株式会社ブイ・テクノロジー 表示装置の製造方法、チップ部品の転写方法、および転写部材
TWI648871B (zh) * 2017-09-22 2019-01-21 台灣愛司帝科技股份有限公司 發光模組的製作方法
JP6990577B2 (ja) * 2017-12-22 2022-01-12 東レエンジニアリング株式会社 実装方法および実装装置
CN108962789A (zh) * 2018-06-25 2018-12-07 开发晶照明（厦门）有限公司 微器件转移方法和微器件转移设备

Also Published As

Publication number Publication date
EP4080550A4 (en) 2024-01-03
CN213424968U (zh) 2021-06-11
CN114902387A (zh) 2022-08-12
EP4080550A1 (en) 2022-10-26
JP2023507820A (ja) 2023-02-27

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