KR20220087495A - 실리콘 산화물 및 탄소 도핑된 실리콘 산화물 cmp를 위한 조성물 및 방법 - Google Patents

실리콘 산화물 및 탄소 도핑된 실리콘 산화물 cmp를 위한 조성물 및 방법 Download PDF

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Publication number
KR20220087495A
KR20220087495A KR1020227016718A KR20227016718A KR20220087495A KR 20220087495 A KR20220087495 A KR 20220087495A KR 1020227016718 A KR1020227016718 A KR 1020227016718A KR 20227016718 A KR20227016718 A KR 20227016718A KR 20220087495 A KR20220087495 A KR 20220087495A
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KR
South Korea
Prior art keywords
composition
acid
diacid
abrasive particles
silicon oxide
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Application number
KR1020227016718A
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English (en)
Korean (ko)
Inventor
스티븐 크래프트
페르난도 헝 로우
수디프 팔리카라 쿠티아토르
사라 브로스난
브라이언 리스
사조 나이크
Original Assignee
씨엠씨 머티리얼즈, 인코포레이티드
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Publication of KR20220087495A publication Critical patent/KR20220087495A/ko

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020227016718A 2019-10-22 2020-10-22 실리콘 산화물 및 탄소 도핑된 실리콘 산화물 cmp를 위한 조성물 및 방법 KR20220087495A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962924332P 2019-10-22 2019-10-22
US62/924,332 2019-10-22
PCT/US2020/056788 WO2021081162A1 (en) 2019-10-22 2020-10-22 Composition and method for silicon oxide and carbon doped silicon oxide cmp

Publications (1)

Publication Number Publication Date
KR20220087495A true KR20220087495A (ko) 2022-06-24

Family

ID=75490935

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227016718A KR20220087495A (ko) 2019-10-22 2020-10-22 실리콘 산화물 및 탄소 도핑된 실리콘 산화물 cmp를 위한 조성물 및 방법

Country Status (7)

Country Link
US (1) US20210115300A1 (zh)
EP (1) EP4048750A4 (zh)
JP (1) JP2022553346A (zh)
KR (1) KR20220087495A (zh)
CN (1) CN114599750A (zh)
TW (1) TWI764338B (zh)
WO (1) WO2021081162A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4223849A4 (en) * 2020-09-30 2024-10-23 Agc Inc CERIASIS AND POLISHING AGENTS
CN115960540A (zh) * 2022-12-23 2023-04-14 昂士特科技(深圳)有限公司 具有改进颗粒的化学机械抛光组合物
CN116000782B (zh) * 2022-12-27 2023-09-19 昂士特科技(深圳)有限公司 用于金属合金cmp的化学机械抛光组合物

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100378180B1 (ko) 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
US7887714B2 (en) * 2000-12-25 2011-02-15 Nissan Chemical Industries, Ltd. Cerium oxide sol and abrasive
JP4003116B2 (ja) * 2001-11-28 2007-11-07 株式会社フジミインコーポレーテッド 磁気ディスク用基板の研磨用組成物及びそれを用いた研磨方法
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
DE102006061891A1 (de) * 2006-12-28 2008-07-03 Basf Se Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid
EP2776523B1 (en) 2011-11-09 2016-07-20 Rhodia Operations Additive mixture and composition and method for polishing glass substrates
US8906252B1 (en) * 2013-05-21 2014-12-09 Cabot Microelelctronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US9165489B2 (en) * 2013-05-21 2015-10-20 Cabot Microelectronics Corporation CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity
SG11201606157VA (en) * 2014-01-31 2016-08-30 Basf Se A chemical mechanical polishing (cmp) composition comprising a poly(aminoacid)
US10414947B2 (en) 2015-03-05 2019-09-17 Cabot Microelectronics Corporation Polishing composition containing ceria particles and method of use
KR20170073857A (ko) * 2015-12-21 2017-06-29 솔브레인 주식회사 연마용 슬러리 조성물 및 이를 이용한 기판의 연마 방법
KR20170076191A (ko) * 2015-12-24 2017-07-04 주식회사 케이씨텍 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물
JP6930976B2 (ja) 2016-01-06 2021-09-01 シーエムシー マテリアルズ，インコーポレイティド 低ｋ基板の研磨方法
KR20180068424A (ko) * 2016-12-14 2018-06-22 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조방법
JP7132942B2 (ja) 2017-04-17 2022-09-07 シーエムシー マテリアルズ，インコーポレイティド バルク酸化物の平坦化のための自己停止研磨組成物および方法
US11578235B2 (en) * 2017-06-15 2023-02-14 Rhodia Operations Cerium based particles
KR20190074597A (ko) * 2017-12-20 2019-06-28 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
KR20190080616A (ko) * 2017-12-28 2019-07-08 주식회사 케이씨텍 Cmp용 슬러리 조성물

Also Published As

Publication number Publication date
WO2021081162A1 (en) 2021-04-29
EP4048750A4 (en) 2024-01-03
TWI764338B (zh) 2022-05-11
JP2022553346A (ja) 2022-12-22
EP4048750A1 (en) 2022-08-31
US20210115300A1 (en) 2021-04-22
CN114599750A (zh) 2022-06-07
TW202122523A (zh) 2021-06-16

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