KR20220084541A - Apparatus and method for treating substrate - Google Patents

Abstract

The present invention provides a chamber having a processing space therein; a supply line provided with a first on-off valve and configured to supply a processing fluid to the processing space; a heater installed on the supply line to heat the processing fluid; an exhaust line on which a second on-off valve is installed and exhausting the processing space; and a controller controlling the first on-off valve and the second on-off valve, wherein the controller supplies and exhausts the heated processing fluid to the processing space before performing a processing process on a substrate in the processing space. It relates to an apparatus for processing a substrate for controlling the first on-off valve and the second on-off valve to do so.

Description

Substrate processing apparatus and method {APPARATUS AND METHOD FOR TREATING SUBSTRATE}

The present invention relates to a substrate processing apparatus and method.

In order to manufacture a semiconductor device, various processes such as deposition, photography, etching, and cleaning are performed. Among them, the photographic process includes a coating process, an exposure process, and a developing process. The coating process is a process of applying a photoresist such as a photoresist on a substrate. The exposure process is a process of exposing a circuit pattern on a substrate by exposing light from a light source through a photomask on the applied photoresist film. In addition, the developing process is a process of selectively developing the exposed region of the substrate.

The developing process generally includes a developer supply step, a rinse solution supply step, and a drying step. In the drying step, a spin chuck supporting the substrate is rotated, and spin drying is performed to dry the developer or rinse solution remaining on the substrate using centrifugal force applied by the spin chuck to the substrate.

Recently, as the distance (CD: Critical Dimension) between a pattern formed on a substrate and a pattern is miniaturized, a leaning phenomenon in which the patterns are collapsed or bent occurs when the above-described spin drying is performed. This problem is pointed out as a limitation of the equipment that performs the existing photographic process.

An object of the present invention is to provide an apparatus capable of efficiently performing a developing process.

In addition, the present invention is to provide an apparatus capable of preventing the pattern from collapsing or bending (Leaning) phenomenon.

Another object of the present invention is to provide a platform for a substrate processing apparatus capable of efficiently performing a developing process and a supercritical process.

Another object of the present invention is to provide a platform for a substrate processing apparatus capable of cleaning a non-pattern surface of a substrate.

Another object of the present invention is to provide a substrate processing apparatus capable of compensating for a temperature of a supercritical fluid supplied in a supercritical treatment process.

The problems to be solved by the present invention are not limited thereto, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

The present invention provides an apparatus for processing a substrate. According to one embodiment of the present invention,

a chamber having a processing space therein; a supply line provided with a first on-off valve and configured to supply a processing fluid to the processing space; a heater installed on the supply line to heat the processing fluid; an exhaust line on which a second on-off valve is installed and exhausting the processing space; and a controller controlling the first on-off valve and the second on-off valve, wherein the controller supplies and exhausts the heated processing fluid to the processing space before performing a processing process on a substrate in the processing space. to control the first on-off valve and the second on-off valve.

In an embodiment, the controller may control the first on-off valve and the second on-off valve to supply and exhaust the heated processing fluid to the processing space before the substrate is put into the processing space. .

In an embodiment, the supply line includes an upper supply line connected to an upper wall of the chamber and a lower supply line connected to a lower wall of the chamber, and the heater is a first heater installed on the upper supply line. and a second heater installed on the lower supply line.

In an embodiment, the processing fluid may be simultaneously supplied to the upper supply line and the lower supply line before the substrate is input into the processing space.

According to an embodiment, it may include a filter installed on the supply line and installed downstream of the heater.

In an embodiment, the controller may control the substrate to be introduced into the processing space when the processing fluid is heated to a temperature higher than a set temperature by the heater.

According to an embodiment, the set temperature may be lower than a critical temperature, which is a temperature at which the processing fluid starts to change to a supercritical state.

According to an embodiment, the processing fluid may be a fluid in a supercritical state.

In an embodiment, the first on-off valve includes an upper on-off valve installed on the upper supply line and a lower on-off valve installed on the lower supply line, and the controller includes: Before this proceeds, it is possible to control the upper opening/closing valve and the lower opening/closing valve to be opened and closed at the same time.

In an embodiment, the supercritical fluid may dry the developer remaining on the substrate.

The present invention provides an apparatus for processing a substrate. According to an embodiment, an index module including a container in which the substrate is accommodated; a processing module for performing a process on the substrate, the processing module comprising: a buffer unit for temporarily storing the substrate; a wet processing chamber for supplying a developer to develop the substrate; a supercritical processing chamber for processing the substrate by supplying a supercritical fluid; a heat treatment chamber for performing a heat treatment process on the substrate, and a transfer chamber including a transfer unit for transferring the substrate between the wet treatment chamber, the supercritical treatment chamber, and the heat treatment chamber, the supercritical treatment chamber is, a supply line for supplying the supercritical fluid to the inner processing space; a heater installed on the supply line to heat the processing fluid; an exhaust line exhausting the processing space; and a controller controlling the supply unit and the exhaust unit, wherein the controller controls to supply and exhaust the heated processing fluid to the processing space before performing a processing process on the substrate in the processing space. can

In an embodiment, the supply line includes an upper supply line connected to an upper wall of the chamber and a lower supply line connected to a lower wall of the chamber, and the heater is a first heater installed on the upper supply line. and a second heater installed on the lower supply line.

In an embodiment, the controller may control the processing fluid to be simultaneously supplied to the upper supply line and the lower supply line.

According to an embodiment, it may include a filter installed on the supply line and installed downstream of the heater.

According to an embodiment, the processing fluid may be a fluid in a supercritical state.

The present invention provides a method of processing a substrate. According to one embodiment, the sealing step of closing the processing space; a pre-supply step of supplying and discharging a processing fluid into and out of the processing space; a substrate processing step of supplying the processing fluid to the processing space to process the substrate; and opening the processing space and unloading the substrate.

According to an embodiment, between the pre-supply step and the substrate processing step, a loading step of loading the substrate into the processing space may be included.

In an embodiment, the carrying in step may be performed after the processing fluid is heated to a temperature higher than or equal to a set temperature in the pre-supplying step.

In an embodiment, the processing fluid includes a first supply path supplied from an upper portion of the processing space and a second supply path supplied from a lower portion of the processing space, and the processing fluid includes the first supply path and It may be simultaneously supplied to the second supply path.

According to an embodiment, the method may perform a substrate processing process on a plurality of substrates, and the pre-supplying may be performed on each of the plurality of substrates.

The present invention can provide an apparatus capable of efficiently performing a developing process.

In addition, the present invention can provide an apparatus capable of preventing the pattern from collapsing or bending the leaning (Leaning) phenomenon.

Also, the present invention may provide a platform for a substrate processing apparatus capable of efficiently performing a developing process and a supercritical process.

In addition, the present invention may provide a platform for a substrate processing apparatus capable of cleaning a non-patterned surface of a substrate.

In addition, it is possible to prevent the occurrence of reverse contamination due to contaminants on the non-patterned surface of the substrate.

In addition, it is possible to provide a substrate processing apparatus capable of compensating for the temperature of the supercritical fluid supplied in the supercritical processing process.

1 is a diagram illustrating a substrate processing apparatus in which a coating process is performed according to an embodiment of the present invention.
2 is a diagram illustrating a substrate processing apparatus in which an exposure process is performed according to an exemplary embodiment of the present invention.
3 is a diagram illustrating a substrate processing apparatus in which a developing process is performed according to an exemplary embodiment of the present invention.
4 is a cross-sectional view of the substrate processing apparatus of FIG. 3 viewed from one direction.
5 is a cross-sectional view of the substrate processing apparatus of FIG. 3 viewed from a direction opposite to one direction.
6 is a plan view of the substrate processing apparatus of FIG. 3 .
7 is a view showing an example of a hand of the transport robot of FIG. 6 .
8 is a plan cross-sectional view schematically illustrating an example of a heat treatment chamber of a substrate processing apparatus according to an embodiment of the present invention.
9 is a front cross-sectional view of the heat treatment chamber of FIG. 8 .
10 is a diagram schematically illustrating a back surface cleaning chamber of a substrate processing apparatus according to an embodiment of the present invention.
11 is a diagram schematically illustrating a supercritical chamber of a substrate processing apparatus according to an embodiment of the present invention.
12 is a diagram schematically illustrating a wet processing chamber of a substrate processing apparatus according to an embodiment of the present invention.
13 is a flowchart of a substrate processing method according to an embodiment of the present invention.
14 is a diagram illustrating a supercritical chamber according to an embodiment of the present invention.
15 is a graph illustrating a temperature of a processing fluid and timing of input and discharge of a substrate according to an embodiment of the present invention.

Since the present invention can apply various transformations and can have various embodiments, specific embodiments are illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, and should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the present invention, if it is determined that a detailed description of a related known technology may obscure the gist of the present invention, the detailed description thereof will be omitted.

The terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly dictates otherwise. In the present application, terms such as “comprise” or “have” are intended to designate that a feature, number, step, operation, component, part, or combination thereof described in the specification exists, but one or more other features It should be understood that this does not preclude the existence or addition of numbers, steps, operations, components, parts, or combinations thereof.

Terms such as first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another.

A controller (not shown) may control overall operations of the substrate processing apparatus. The controller (not shown) may include a central processing unit (CPU), read only memory (ROM), and random access memory (RAM). The CPU executes desired processing, such as liquid processing and drying processing, which will be described later, according to various recipes stored in these storage areas. In the recipe, process time, process pressure, press temperature, various gas flow rates, etc., which are control information of the device for process conditions, are input. In addition, recipes indicating these programs and processing conditions may be stored in a hard disk or semiconductor memory. In addition, the recipe may be set at a predetermined position in the storage area while being accommodated in a portable computer-readable storage medium such as a CD-ROM or DVD.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings, and in the description with reference to the accompanying drawings, the same or corresponding components, regardless of reference numerals, are given the same reference numbers and overlapped therewith. A description will be omitted.

1 is a view showing a substrate processing apparatus on which a coating process is performed according to an embodiment of the present invention, Figure 2 is a view showing a substrate processing apparatus on which an exposure process according to an embodiment of the present invention is performed, 3 is a diagram illustrating a substrate processing apparatus in which a developing process is performed according to an exemplary embodiment of the present invention.

1 to 3 , in the present invention, the coating process, the exposure process, and the developing process may be performed in different devices. Specifically, a liquid film may be formed by coating a photoresist on the substrate W in the substrate processing apparatus in which the coating process of FIG. 1 is performed. In the substrate processing apparatus in which the coating process is performed, a baking process of baking the substrate before and after forming the liquid film on the substrate W may be performed. The bake process may be a process of heating the substrate W to a process temperature or higher in a closed space. In the baking process performed after forming the film on the substrate W, the photoresist film applied on the substrate may be heated and volatilized to adjust the film thickness to a set thickness. After the coating process, the substrate W may be transferred to the substrate processing apparatus in which the exposure process of FIG. 2 is performed. The exposure process may be a process of exposing a circuit pattern on the substrate W on which the photoresist film is formed. The exposure process may be performed by irradiating an exposure beam onto the substrate W. In the exposure process, a process of exposing the center of the substrate W and an edge exposure process of exposing the edge of the substrate W may be performed. After the exposure process is performed, the substrate W may be transferred to the substrate processing apparatus in which the developing process of FIG. 3 is performed. The developing process may be a process of selectively developing the exposed region of the substrate W. Referring to FIG. Hereinafter, a substrate processing apparatus in which a developing process is performed will be described in more detail with reference to the drawings.

FIG. 4 is a cross-sectional view of the substrate processing apparatus of FIG. 3 viewed from one direction, and FIG. 5 is a cross-sectional view of the substrate processing apparatus of FIG. 3 viewed from a direction opposite to the one direction.

3 to 6 , the substrate processing apparatus 1 may include an index module 20 and a treating module 30 . According to an embodiment, the index module 20 and the processing module 30 may be sequentially arranged in a line. Hereinafter, the direction in which the index module 20 and the processing module 30 are arranged is referred to as the X-axis direction 12, and the direction perpendicular to the X-axis direction 12 when viewed from the top is referred to as the Y-axis direction 14. and a direction perpendicular to both the X-axis direction 12 and the Y-axis direction 14 is referred to as a Z-axis direction 16 .

The index module 20 may transfer the substrate W from the container 10 in which the substrate W is accommodated to the processing module 30 , and receive the processed substrate W into the container 10 . The longitudinal direction of the index module 20 may be provided in the Y-axis direction 14 . The index module 20 may include a load port 22 and an index frame 24 . With respect to the index frame 24 , the load port 22 may be located on the opposite side of the processing module 30 . The container 10 in which the substrates W are accommodated may be placed in the load port 22 . A plurality of load ports 22 may be provided, and the plurality of load ports 22 may be disposed along the Y-axis direction 14 .

As the container 10, a closed container 10 such as a Front Open Unified Pod (FOUP) may be used. Vessel 10 may be placed in loadport 22 by an operator or by a transfer means (not shown) such as an Overhead Transfer, Overhead Conveyor, or Automatic GuidedVehicle. have.

An index robot 2200 may be provided inside the index frame 24 . A guide rail 2300 having a longitudinal direction in the Y-axis direction 14 is provided in the index frame 24 , and the index robot 2200 may be provided to be movable on the guide rail 2300 . The index robot 2200 includes a hand 2220 on which the substrate W is placed, and the hand 2220 moves forward and backward, rotates about the Z-axis direction 16, and performs the Z-axis direction 16. It may be provided to be movable along with it.

According to an embodiment of the present invention, the processing module 30 may perform a processing process on the substrate W. For example, the processing module 30 may perform a wet processing process, a heat treatment process, a back surface cleaning process, and a supercritical process on the substrate W.

The processing module 30 includes a processing block 30a. The processing block 30a may perform a processing process on the substrate W. A plurality of processing blocks 30a are provided, and they may be provided to be stacked on each other. According to the embodiment of FIG. 3 , three processing blocks 30a may be provided. According to an example, the three processing blocks 30a may perform the same process as each other, and may be provided in the same structure.

3 to 6 , the processing block 30a includes a transfer chamber 3100 , a wet processing chamber 3200 , a backside cleaning chamber 3300 , a heat treatment chamber 3400 , a supercritical chamber 3500 , and a buffer. It may include a chamber 3600 .

The transfer chamber 3100 may transfer the substrate W between the wet processing chamber 3200 , the backside cleaning chamber 3300 , the heat treatment chamber 3400 , and the supercritical chamber 3500 within the processing block 30a . The transfer chamber 3100 may be provided so that its longitudinal direction is parallel to the X-axis direction 12 . A transfer unit 3120 may be provided in the transfer chamber 3100 . The transfer unit 3120 may transfer the substrate W between the wet processing chamber 3200 , the backside cleaning chamber 3300 , the heat treatment chamber 3400 , and the supercritical chamber 3500 . According to an example, the transfer unit 3120 has a hand A on which the substrate W is placed, and the hand A moves forward and backward, rotates about the Z-axis direction 16 , and the Z-axis direction It may be provided movably along (16). A guide rail 3140 having a longitudinal direction parallel to the X-axis direction 12 is provided in the transfer chamber 3100 , and the transfer unit 3140 may be provided movably on the guide rail 3300 . .

7 is a view showing an example of a hand of the transport robot of FIG. 6 . Referring to FIG. 7 , the hand A may include a base 3128 and a support protrusion 3129 . The base 3128 may have an annular ring shape in which a portion of the circumference is bent. The base 3128 may have an inner diameter greater than the diameter of the substrate W. The support protrusion 3129 may extend inwardly from the base 3128 . A plurality of support protrusions 3129 may be provided, and may support an edge region of the substrate W. As shown in FIG. According to an example, four support protrusions 3129 may be provided at equal intervals.

The wet processing chamber 3200 may supply a processing liquid to perform a liquid processing process on the substrate W. The wet processing chamber 3200 may perform a developing process on the substrate W. In this case, the processing liquid discharged from the wet processing chamber 3200 may be a developer. The wet processing chamber 3200 may discharge the developer to the pattern surface of the substrate W.

The wet processing chamber 3200 may be disposed at one side of the transfer chamber 3100 . The wet processing chamber 3200 may include a plurality of wet processing chambers 3200 . The plurality of wet processing chambers 3200 may be stacked on each other. The wet processing chamber 3200 may be disposed to face the rear surface cleaning chamber 3300 or the heat treatment chamber 3400 with the transfer chamber 3100 interposed therebetween. The wet processing chamber 3200 may be disposed between the index module 20 and the supercritical chamber 3500 . The number of wet processing chambers 3200 may correspond to the number of supercritical chambers 3500 . The wet processing chamber 3200 may be provided in a greater number than the backside cleaning chamber 3300 . The wet processing chamber 3200 may be provided in a greater number than the heat treatment chamber 3400 . However, the present invention is not limited thereto, and may be changed in consideration of a device footprint, process efficiency, and the like.

Referring to the above description, it has been described that the substrate W developed in the wet processing chamber 3200 is dried in the supercritical chamber 3500 without a cleaning treatment. However, as a modification, the wet processing chamber 3200 may further include a cleaning liquid supply member for supplying a cleaning liquid for cleaning the non-patterned surface of the substrate W. Referring to FIG. In this case, the cleaning solution may include a thinner. In this case, the supercritical chamber 3500 may dry the thinner remaining on the substrate W.

12 is a diagram schematically illustrating a wet processing chamber of a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 12 , the wet processing chamber 3200 may develop the substrate W by applying a developer to the substrate W. Referring to FIG. It may include a housing (not shown), a support unit 3210 , a treatment liquid supply member 3220 , and a recovery member 3230 . The wet processing chamber 3200 may provide a processing space in which the substrate W is processed in the housing.

The support unit 3210 may support the substrate W. The support member 3100 may rotate the supported substrate S. The support unit 3210 may include a support plate 3211 , a support pin 3212 , a chuck pin 3213 , a rotation shaft 3214 , and a rotation driver 3215 . The support plate 3211 may have an upper surface of the same or similar shape as that of the substrate W. A support pin 3212 and a chuck pin 3213 may be provided on an upper surface of the support plate 3211 . The support pin 3212 may support the bottom surface of the substrate W. The support pin 3212 may protrude upward from the upper surface of the support plate 3211 . The chuck pin 3213 may fix the supported substrate W . The chuck pin 3213 may support the side of the supported substrate W . Through this, it is possible to prevent the rotating substrate W from being laterally separated by the rotational force. A rotation shaft 3214 may be connected to a lower portion of the support plate 3212 . The rotation shaft 3214 may receive rotational force from the rotation driver 3215 to rotate the support plate 3211 . Accordingly, the substrate W seated on the support plate 3211 may be rotated. The chuck pin 3213 may prevent the substrate W from being deviated from its original position.

The supply member 3220 may spray the processing liquid onto the substrate W. The treatment solution may include a developer solution. The supply member 3220 may include a nozzle 3221 , a nozzle bar 3222 , a nozzle shaft 3223 , and a nozzle shaft driver 3224 . The nozzle 3221 may supply a developer to the substrate W seated on the support plate 3211 . The nozzle 3221 may be formed on the lower surface of one end of the nozzle bar 3222 . The nozzle bar 3222 may be coupled to the nozzle shaft 3223 . The nozzle shaft 3223 may be provided to be able to lift or rotate. The nozzle shaft driver 3224 may adjust the position of the nozzle 3221 by lifting or rotating the nozzle shaft 3223 . The nozzle 3221 may be connected to a developer supply line (not shown). The developer supply line may be connected to a developer supply source (not shown). A valve may be installed in the developer supply line.

The recovery member 3230 may include a recovery container 3231 , a recovery line 3232 , an elevation bar 3233 , and an elevation driver 3234 . The recovery container 3231 may be provided in an annular ring shape surrounding the support plate 3211 . A plurality of collection containers 3231 may be provided. The plurality of collecting troughs 3231 may be provided in a ring shape that sequentially moves away from the support plate 3211 when viewed from the top. The recovery container 3231 that is farther away from the support plate 3211 may have a higher height. A recovery port 323j through which the developer scattering from the substrate W flows may be formed in the space between the recovery barrels 3231 . A recovery line 3233 may be formed on a lower surface of the recovery container 3231 . The lifting bar 3234 may be connected to the recovery container 3231 . The elevating bar 3231 may receive power from the elevating driver 3235 to move the collecting container 3231 up and down. The lifting bar 3233 may be connected to the collection container 3231 disposed at the outermost side when there are a plurality of collection containers 3231 . The lifting driver 3235 may control the recovery port 3232 through which the scattering treatment liquid flows among the plurality of recovery ports 3232 by raising and lowering the recovery barrel 3231 through the elevation bar 3234 .

In another embodiment, the wet processing chamber 3200 may perform a cleaning process on the substrate W. In this case, the processing liquid discharged from the wet processing chamber 3200 may be a cleaning liquid. The cleaning solution may include a chemical, pure water (DIW), and an organic solvent. The organic solvent may include isopropyl alcohol (IPA). In this case, the nozzle member 3220 of the wet processing chamber 3200 may include a chemical supply member, a pure water supply member, and an organic solvent supply member, respectively. In the wet processing chamber 3200 , the pattern surface of the substrate W may be cleaned. In this case, the substrate processing apparatus does not include the heat treatment chamber 3400 . Accordingly, the wet processing chamber 3200 and the back cleaning chamber 3300 may be provided in a number corresponding to each other.

The backside cleaning chamber 3300 may clean the non-patterned surface of the substrate W. The backside cleaning chamber 3300 may be disposed on one side of the transfer chamber 3100 . The backside cleaning chamber 3300 may include a plurality of backside cleaning chambers 3300 . The backside cleaning chamber 3300 may be vertically stacked with the heat treatment chamber 3400 . The backside cleaning chamber 3300 may be disposed to face the wet processing chamber 3200 with the transfer chamber 3100 interposed therebetween. The backside cleaning chamber 3300 may be disposed between the index module 20 and the supercritical chamber 3500 . The backside cleaning chamber 3300 may be provided in a smaller number than the supercritical chamber 3500 . The number of backside cleaning chambers 3300 may be smaller than that of the wet processing chambers 3200 . The back cleaning chamber 3300 may be provided in a number corresponding to that of the heat treatment chamber 3400 . However, the present invention is not limited thereto, and may be changed in consideration of a device footprint, process efficiency, and the like.

10 is a diagram schematically illustrating a back surface cleaning chamber of a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 10 , the back surface cleaning chamber 3300 may include a housing 3310 , a processing container 3320 , a substrate support unit 3330 , an inversion unit 3340 , and a cleaning unit 3350 .

The housing 3310 may provide a processing space in which the non-patterned surface of the substrate W is cleaned. The processing container 3320 may be disposed inside the housing 3310 . The processing vessel 3320 may have a cylindrical shape with an open top, and may provide a processing space for processing the substrate W. Referring to FIG. The opened upper surface of the processing container 3320 may serve as a passage for carrying out and carrying in the substrate W. Referring to FIG. A substrate support unit 3330 may be positioned inside the processing vessel 3320 . The substrate support unit 3330 may support the substrate W and rotate the substrate during a process.

The substrate support unit 3330 may be installed inside the processing vessel 3320 . The substrate support unit 3330 may support the substrate W during a process. The substrate support unit 3330 may be rotated by a driving unit 3332 to be described later while a process is in progress. The substrate support unit 3330 may include a spin head 3334 , a support shaft 3336 , and a driving unit 3332 .

The spin head 3334 may include a circular top surface. A support shaft 3336 supporting the spin head 3334 may be connected to a lower portion of the spin head 3334 . The support shaft 3336 may be rotated by a driving unit 3332 connected to a lower end thereof. The driving unit 3332 may be provided as a motor or the like. As the support shaft 3336 rotates, the spin head 3334 and the substrate W may rotate.

The inversion unit 3340 may be located at the top of the processing vessel 3320 . The inversion unit 3340 may load the spin head 3334 by inverting the substrate W such that the non-patterned surface of the substrate faces upward. The inversion unit 3340 includes a holding part 3342 on which the substrate W as a target object is loaded, an inversion part 3344 for inverting the holding part 3342 , and a lifting part 3346 for elevating the inversion part 3344 . ) may be included. At this time, the inverting part 3344 is for inverting the holding part 3342 by 180 degrees, and a driving device 3348 such as a motor may be used. The elevating unit 3346 is for elevating the inverting unit 3344 in a vertical direction (a direction parallel to the axial direction of the support shaft 3336). A linear drive device such as a cylinder or a linear motor or a lead screw using a motor may be used can

The holding part 3342 of the inversion unit 3340 may simultaneously perform a buffer function in which a substrate W to be inverted as well as a substrate W to be temporarily placed on standby may be placed.

The cleaning unit 3350 may supply a cleaning fluid to the substrate W having the non-patterned surface exposed upward by the inversion unit 3340 . The cleaning unit 3350 may discharge the cleaning fluid toward the non-patterned surface of the substrate W. As another example, the cleaning unit 3350 may perform physical cleaning on the non-patterned surface of the substrate W using a brush or the like. The cleaning unit 3350 includes a nozzle 3352 discharging the cleaning fluid, a nozzle arm 3354 supporting the nozzle 3352 , and a support shaft 3356 supporting the nozzle arm 3354 and moving the nozzle arm 3354 . , a driving unit 3258 for applying a driving force to the support shaft 3356 may be included.

The heat treatment chamber 3400 may perform a heat treatment process on the substrate W. The heat treatment chamber 3400 may be disposed at one side of the transfer chamber 3100 . The heat treatment chamber 3400 may include a plurality of heat treatment chambers 3400 . The heat treatment chamber 3400 may be vertically stacked with the rear surface cleaning chamber 3300 . The heat treatment chamber 3400 may be disposed to face the wet treatment chamber 3200 with the transfer chamber 3100 interposed therebetween. The heat treatment chamber 3400 may be disposed between the index module 20 and the supercritical chamber 3500 . The number of heat treatment chambers 3400 may be smaller than that of the supercritical chambers 3500 . The number of backside cleaning chambers 3300 may be smaller than that of the wet processing chambers 3200 . The heat treatment chambers 3400 may be provided in a number corresponding to that of the back surface cleaning chambers 3300 . However, the present invention is not limited thereto, and may be changed in consideration of a device footprint, process efficiency, and the like.

8 is a plan cross-sectional view schematically illustrating an example of a heat treatment chamber of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 9 is a front cross-sectional view of the heat treatment chamber of FIG. 8 . 8 and 9 , the heat treatment chamber 3400 may include a housing 3410 , a cooling unit 3420 , a heating unit 3430 , and a transport plate 3440 . The heat treatment chamber 3400 may perform a heat treatment process on the substrate W. The heat treatment process may include a cooling process and a heating process.

The housing 3410 may be provided in the shape of a substantially rectangular parallelepiped. An inlet (not shown) through which the substrate W enters and exits may be formed on a sidewall of the housing 3410 . The inlet may remain open. Optionally, a door (not shown) may be provided to open and close the inlet. The cooling unit 3420 , the heating unit 3430 , and the conveying plate 3440 may be provided in the housing 3410 . The cooling unit 3420 and the heating unit 3430 may be provided side by side along the Y-axis direction 14 . According to an example, the cooling unit 3420 may be located closer to the transfer chamber 3100 than the heating unit 3430 .

The cooling unit 3420 may include a cooling plate 3422 . The cooling plate 3422 may have a generally circular shape when viewed from above. A cooling member 3424 may be provided on the cooling plate 3422 . According to an example, the cooling member 3424 is formed inside the cooling plate 3422 and may be provided as a flow path through which the cooling fluid flows.

The heating unit 3430 may include a heating plate 3432 , a cover 3434 , and a heater 3433 . The heating plate 3432 may have a generally circular shape when viewed from above. The heating plate 3432 may have a larger diameter than the substrate W. A heater 3433 may be installed on the heating plate 3432 . The heater 3433 may be provided as a heating resistor to which current is applied. Lift pins 3438 drivable in the vertical direction along the Z-axis direction 16 may be provided on the heating plate 3432 . The lift pin 3438 receives the substrate W from the transfer means outside the heating unit 3430 and puts it down on the heating plate 3432 or lifts the substrate W from the heating plate 3432 to the outside of the heating unit 3430 It can be handed over by means of conveyance. According to one example, three lift pins 3438 may be provided. The cover 3434 may include a space having an open lower portion therein. The cover 3434 is positioned on the heating plate 3432 and may be moved in the vertical direction by the actuator 3436 . When the cover 3434 is in contact with the heating plate 3432 , a space surrounded by the cover 3434 and the heating plate 3432 may be provided as a heating space for heating the substrate W .

The transport plate 3440 may have a substantially disk shape and may include a diameter corresponding to that of the substrate W. A notch 3444 may be formed at an edge of the transport plate 3440 . The notch 3444 may have a shape corresponding to the protrusion 3129 formed on the hand A of the transfer robot 3120 described above. Also, the notch 3444 may be provided in a number corresponding to the protrusions 3129 formed on the hand A, and may be formed at positions corresponding to the protrusions 3129 . When the upper and lower positions of the hand A and the carrier plate 3440 are changed in a position in which the hand A and the carrier plate 3440 are vertically aligned, the substrate W between the hand A and the carrier plate 3440 is The transfer may take place. The transport plate 3440 is mounted on the guide rail 3449 and may be moved along the guide rail 3449 by the actuator 3446 . A plurality of slit-shaped guide grooves 3442 may be provided in the transport plate 3440 . The guide groove 3442 may extend from the end of the transport plate 3440 to the inside of the transport plate 3440 . The guide grooves 3442 may be provided in a longitudinal direction along the Y-axis direction 14 , and the guide grooves 3442 may be spaced apart from each other along the X-axis direction 12 . The guide groove 3442 may prevent the transfer plate 3440 and the lift pins from interfering with each other when the substrate W is transferred between the transfer plate 3440 and the heating unit 3430 .

The substrate W is heated in a state where the substrate W is placed directly on the heating unit 3430 , and the substrate W is cooled by the transfer plate 3440 on which the substrate W is placed and the cooling plate 3222 . made in contact with The transfer plate 3440 may be made of a material having a high heat transfer rate to facilitate heat transfer between the cooling plate 3422 and the substrate W. According to an example, the transport plate 3440 may be made of a metal material.

The supercritical chamber 3500 processes the substrate W by supplying a supercritical fluid to the substrate W. For example, the supercritical chamber 3500 may supply a supercritical fluid to the substrate W to dry the substrate W. The supercritical chamber 3500 may perform a drying process on the substrate W processed in the wet processing chamber 3200 . In an embodiment, the supercritical chamber 3500 may perform a drying process on the substrate W developed in the wet processing chamber 3200 . In this case, the developing solution remaining on the substrate W may be dried in the supercritical chamber 3500 . In an embodiment, the supercritical chamber 3500 may perform a drying process on the substrate W cleaned in the wet processing chamber 3200 . In this case, the organic solvent remaining on the substrate W may be dried in the supercritical chamber 3500 .

The supercritical chamber 3500 may be disposed on both sides of the transfer chamber 3100 . The supercritical chamber 3500 may include a plurality of supercritical chambers 3500 . The plurality of supercritical chambers 3500 may be stacked vertically on each other. The supercritical chamber 3500 may be disposed outside the wet processing chamber 3200 , the backside cleaning chamber 3300 , and the heat treatment chamber 3400 in the second direction 14 . The supercritical chambers 3500 respectively disposed on one side and the other side of the transfer chamber 3100 may be disposed to face each other with respect to the transfer chamber 3100 when viewed from above. However, the present invention is not limited thereto, and may be changed in consideration of a device footprint, process efficiency, and the like.

Conventionally, when the substrate W is dried after the development treatment, a spin drying method in which the substrate W is rotated and dried is used. However, as the pattern formed on the substrate becomes finer, the conventional spin drying method causes a leaning phenomenon in which the patterns are collapsed or bent. However, according to an embodiment of the present invention, after the development process is performed on the substrate W, the substrate W is transferred to the supercritical chamber 3500 with the developer or cleaning solution remaining on the substrate W immediately. is returned In the supercritical chamber 3500 , the supercritical fluid is supplied to the substrate and dried, so that the aforementioned leaning phenomenon can be minimized. In addition, since the substrate W is transported in a state in which the developer or cleaning solution remains on the substrate W, it is possible to prevent a problem in that the substrate is dried during transport and the quality is deteriorated.

11 is a diagram schematically illustrating a supercritical chamber of a substrate processing apparatus according to an embodiment of the present invention.

The supercritical chamber 3500 removes a liquid on the substrate W using a supercritical fluid. The supercritical chamber 3500 has a body 3520 , a support 3540 , a fluid supply unit 3560 , and a blocking plate 3580 . The body 3520 provides an interior space 3502 in which the drying process is performed. The body 3520 has an upper body 3522 and a lower body 3524 , and the upper body 3522 and the lower body 3524 are combined with each other to provide the above-described internal space 3502 . The upper body 3522 is provided above the lower body 3524 . The position of the upper body 3522 is fixed, and the lower body 3524 can be raised and lowered by a driving member 3590 such as a cylinder. When the lower body 3524 is spaced apart from the upper body 3522 , the internal space 3502 is opened, and at this time, the substrate W is loaded or unloaded. During the process, the lower body 3524 is in close contact with the upper body 3522 so that the inner space 3502 is sealed from the outside. The drying chamber 3500 has a heater 3570 . In one example, the heater 3570 is located inside the wall of the body 3520 . The heater 3570 heats the internal space 3502 of the body 3520 so that the fluid supplied into the internal space of the body 3520 maintains a supercritical state. The support 3540 supports the substrate W in the inner space 3502 of the body 3520 . The support 3540 has a fixing rod 3542 and a cradle 3544 . The fixing rod 3542 is fixedly installed on the upper body 3522 so as to protrude downward from the bottom surface of the upper body 3522 . The fixing rod 3542 is provided in the vertical direction in its longitudinal direction. A plurality of fixing rods 3542 are provided and are positioned to be spaced apart from each other. The fixing rods 3542 are disposed so that the substrate W does not interfere with the fixing rods 3542 when the substrate W is loaded or unloaded into the space surrounded by the fixing rods 3542 . A cradle 3544 is coupled to each of the fixing rods 3542 . The holder 3544 extends from the lower end of the fixing rod 3542 toward the space surrounded by the fixing rods 3542 . Due to the above-described structure, the edge region of the substrate W carried into the internal space 3502 of the body 3520 is placed on the cradle 3544, and the entire upper surface area of the substrate W, the substrate W A part of the central region of the bottom surface of the substrate W and the edge region of the bottom surface of the substrate W are exposed to the drying fluid supplied to the internal space 3502 . The fluid supply unit 3560 supplies a drying fluid to the internal space 3502 of the body 3520 . According to an example, the drying fluid may be supplied to the inner space 3502 in a supercritical state. Alternatively, the drying fluid may be supplied to the internal space 3502 in a gaseous state, and may be phase-changed to a supercritical state in the internal space 3502 . According to one example, the fluid supply unit 3560 has a main supply line 3562 , an upper branch line 3564 , and a lower branch line 3566 . The upper branch line 3564 and the lower branch line 3566 branch from the main supply line 3562 . The upper branch line 3564 is coupled to the upper body 3522 to supply a drying fluid from the upper portion of the substrate W placed on the support 3540 . According to one example, the upper branch line 3564 is coupled to the center of the upper body 3522 . The lower branch line 3566 is coupled to the lower body 3524 to supply a drying fluid from the lower portion of the substrate W placed on the support 3540 . According to one example, the lower branch line 3566 is coupled to the center of the lower body 3524 . An exhaust line 3550 is coupled to the lower body 3524 . The supercritical fluid in the internal space 3502 of the body 3520 is exhausted to the outside of the body 3520 through the exhaust line 3550 . A blocking plate 3580 may be disposed in the inner space 3502 of the body 3520 . The blocking plate 3580 may be provided in a disk shape. The blocking plate 3580 is supported by the support 3582 so as to be spaced upward from the bottom surface of the body 3520 . The support 3582 is provided in a rod shape, and a plurality of

is placed When viewed from the top, the blocking plate 3580 may be provided to overlap the outlet of the lower branch line 3566 and the inlet of the exhaust line 3550 . The blocking plate 3580 may prevent the drying fluid supplied through the lower branch line 3566 from being directly discharged toward the substrate W, thereby preventing the substrate W from being damaged.

A plurality of buffer chambers 3600 may be provided. Some of the buffer chambers 3600 may be disposed between the index module 20 and the transfer chamber 3100 . Hereinafter, these buffer chambers will be referred to as a front buffer 3602 (front buffer). The front-end buffers 3602 are provided in plurality, and are positioned to be stacked on each other in the vertical direction. Another part of the buffer chambers 3602 and 3604 may be disposed outside the transfer chamber 3100 in the second direction 12 . These buffer chambers are referred to as rear buffers 3604 (rear buffers). The rear end buffers 3604 are provided in plurality, and may be positioned to be stacked on each other in the vertical direction. Each of the front-end buffers 3602 and the back-end buffers 3604 may temporarily store a plurality of substrates W. As shown in FIG. The substrate W stored in the shear buffer 3602 may be brought in or taken out by the index robot 2200 and the transfer robot 3120 . The substrate W stored in the downstream buffer 3804 may be carried in or carried out by the transfer robot 3120 .

The substrate processing apparatus may further include a controller (not shown) for controlling the transfer unit. In an embodiment, the controller may control the transfer unit so that the substrate W is loaded into the supercritical chamber 3500 after being loaded into the wet processing chamber 3200 . The substrate W may be developed by a developer in the wet processing chamber 3200 , and the developer remaining on the substrate W may be removed from the substrate W in the supercritical chamber 3500 .

In another embodiment, the controller may control the transfer unit so that the substrate W is loaded into the supercritical chamber 3500 after being loaded into the wet processing chamber 3200 . In this case, as for the substrate W, the pattern surface of the substrate W is cleaned in the wet processing chamber 3200 , and the substrate W is the organic solvent remaining on the substrate W in the supercritical processing chamber 3500 . can be removed.

Hereinafter, the supercritical chamber according to the present invention will be described in more detail with reference to the drawings.

14 is a diagram illustrating a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 14 , the substrate processing apparatus includes a supply unit 4000 supplying a processing fluid to the processing space 3502 inside the supercritical chamber 3500 and an exhaust unit exhausting an atmosphere inside the supercritical chamber 3500 . 5 , and a controller 6000 for controlling the supply unit 4000 and the exhaust unit 5000 .

The supply unit 4000 includes a supply source (not shown) in which the processing fluid is stored, a main supply line 4100 connected to the supply source, and an upper supply line branched from the main supply line 4100 and connected to the upper wall of the chamber 3500 . It may include a 4200 and a lower supply line 4300 branched from the main supply line 4100 and connected to the lower wall of the chamber 3500 . At this time, the direction toward the supply source is referred to as upstream, and the direction opposite to the upstream is referred to as downstream. In addition, the supply unit 4000 includes a first heater 4210 installed on the upper supply line 4200 to heat the processing fluid, a first temperature sensor 4220 , a first filter 4230 , and an upper portion. An on/off valve 4240 may be included. In this case, the first heater 4210 , the first temperature sensor 4220 , the first filter 4230 , and the upper opening/closing valve 4240 may be sequentially installed in a direction from the upstream to the downstream. In addition, the supply unit 4000 includes a second heater 4310 installed on the lower supply line 4300 to heat the processing fluid, a second temperature sensor 4320 , a second filter 4330 , and a lower portion. It may include an opening/closing valve 4340 and a first pressure sensor 4350 . The second heater 4310 , the second temperature sensor 4320 , the second filter 4330 , the lower on-off valve 4340 , and the first pressure sensor 4350 are sequentially arranged from the upstream to the downstream. can be placed.

The exhaust unit 5000 includes an exhaust line 5100 coupled to the lower wall of the chamber 3500 , an on/off valve 5110 installed on the exhaust line 5100 , a pressure sensor 5120 , and a temperature sensor 5130 . ) and an outlet (not shown). In this case, the opening/closing valve 5110 , the pressure sensor 5120 , the temperature sensor 5130 , and the outlet may be sequentially installed in a direction away from the chamber 3500 . That is, the opening/closing valve 5110 , the pressure sensor 5120 , the temperature sensor 5130 , and the outlet may be sequentially installed in a direction from the chamber 3500 toward the outlet.

The processing fluid may include a supercritical fluid. Specifically, it may include CO2 and SCCO2. The processing fluid may be supplied to the processing space 3502 of the chamber 3500 through the main supply line 4100 , the upper supply line 4200 , and the lower supply line 4300 . The first heater 4210 may heat the processing fluid passing through the upper supply line 4200 . The first temperature sensor 4220 may sense the temperature of the processing fluid heated by the first heater 4120 . The first temperature sensor 4210 may transmit the sensed temperature of the processing fluid to the controller 6000 . The first filter 4210 may filter the processing fluid passing through the upper supply line 4200 . The first filter 4210 may remove foreign substances and impurities contained in the processing fluid passing through the upper supply line 4200 . The first filter 4230 may be installed between the first heater 4210 and the upper opening/closing valve 4240 . The upper opening/closing valve 4240 may control the flow rate of the processing fluid introduced through the inlet of the upper wall of the chamber 3500 .

The second heater 4310 may heat the processing fluid passing through the lower supply line 4300 . The second temperature sensor 4320 may sense the temperature of the processing fluid heated by the second heater 4310 . The second temperature sensor 4320 may transmit the sensed temperature of the processing fluid to the controller 6000 . The second filter 4330 may filter the processing fluid passing through the lower supply line 4300 . The second filter 4330 may remove foreign substances and impurities contained in the processing fluid passing through the lower supply line 4300 . The second filter 4330 may be installed between the second heater 4310 and the lower opening/closing valve 4340 . The lower opening/closing valve 4340 may control the flow rate of the processing fluid introduced through the inlet of the lower wall of the chamber 3500 . The first pressure sensor 4350 may sense the pressure of the processing fluid flowing through the lower supply line 4300 . The first pressure sensor 4350 may transmit the sensed pressure to the controller 6000 .

The exhaust unit 5000 may discharge the processing fluid inside the chamber 3500 to the outside. The processing fluid inside the chamber 3500 may be discharged to the outside through the exhaust line 5100 . The opening/closing valve 5110 may control the exhaust flow rate by adjusting the flow rate of the processing fluid flowing through the exhaust line 5100 . The pressure sensor 5120 may sense the pressure of the processing fluid flowing through the exhaust line 5100 and transmit the sensed value to the controller 6000 . The temperature sensor 5130 may sense the temperature of the processing fluid flowing through the exhaust line 5100 .

The controller 6000 includes an upper on-off valve 4240 , a lower on-off valve 4340 , and an exhaust unit 5000 to supply and exhaust the heated processing fluid to and from the processing space before performing a processing process on the substrate in the processing space. ) of the on-off valve 5110 can be controlled. In this case, the controller 6000 includes an upper on/off valve 4240 and a lower on/off valve 4340 to supply and exhaust the heated processing fluid to and from the processing space 3502 before the substrate W is input into the processing space 3502 . ) and the on/off valve 5110 of the exhaust unit 5000 may be controlled. The controller 6000 may control the upper opening/closing valve 4240 and the lower opening/closing valve 4340 to be simultaneously opened and closed before the processing process of the substrate W is performed. In this case, the processing fluid may be simultaneously supplied to the upper supply line 4200 and the lower supply line 4300 before the substrate W is input into the processing space. The controller 6000 may control the substrate W to be introduced into the processing space 3502 when the processing fluid is heated to a set temperature or higher by the first and second heaters 4210 and 4310 . In this case, the set temperature may be a temperature lower than the critical temperature, which is a temperature at which the processing fluid starts to change to a supercritical state.

Hereinafter, a substrate processing method according to the present invention will be described in detail with reference to the drawings.

13 is a flowchart of a substrate processing method according to an embodiment of the present invention.

Referring to FIG. 13 , the substrate processing method according to the present invention includes a substrate sealing step (S100), a pre-supplying step (S200), a chamber opening step (S300), a substrate input step (S400), a process progress step (S500), a substrate It may include a discharging step (S500).

In the substrate sealing step ( S100 ), when the input signal of the substrate W is transmitted, the chamber is sealed before the substrate is input. In the pre-supplying step S200 , the processing fluid may be supplied and discharged to and from the processing space while the processing space is sealed. In this case, the processing fluid may be heated to a preset temperature in advance through pre-supply of the processing fluid. In addition, in the pre-supplying step S200 , the processing fluid includes a first supply path supplied from an upper portion of the processing space and a second supply path supplied from a lower portion of the processing space, and the processing fluid includes the first supply path and the second supply path. It can be controlled to be fed simultaneously to the supply path. In the chamber opening step S300 , when the temperature of the processing fluid sensed by the temperature sensor reaches a set temperature, the controller may open the chamber 3500 . In the substrate input step ( S400 ), the substrate may be input into the processing space. In the process proceeding step S500 , the substrate may be processed by supplying a processing fluid heated to a temperature higher than a set temperature to the processing space. In the step of discharging the substrate ( S500 ), when the processing of the substrate is completed, the processing space may be opened and the substrate may be unloaded.

In the substrate processing method according to the present invention, the substrate processing process may be performed on a plurality of substrates. At this time, for each of the plurality of substrates, the substrate sealing step (S100), the pre-supplying step (S200), the chamber opening step (S300), the substrate input step (S400), the process progress step (S500), and the substrate discharge step (S500) are performed. can be performed. That is, the pre-supply step may be performed for each of the plurality of substrates to be processed.

15 is a graph illustrating a temperature of a processing fluid and timing of input and discharge of a substrate according to an embodiment of the present invention. In FIG. 15 , 'S' indicates a substrate input time, 'F' indicates a substrate discharge time, and P1 indicates that a substrate processing process is performed for one substrate. That is, in FIG. 15 , it can be seen that the processing process is performed for a total of three substrates.

Referring to FIG. 15 , in the substrate processing method according to the present invention, a substrate may be introduced in a state in which the processing fluid is heated to a temperature higher than or equal to a set temperature, and substrate processing may be performed.

In the conventional supercritical processing apparatus, a heater is provided on a supply line in order to raise the temperature of a supercritical fluid. However, due to the high pressure characteristics of the supercritical chamber, the substrate processing process proceeds in a state where the temperature of the fluid is not sufficiently increased by circulating the supercritical fluid, thereby causing a process defect. Furthermore, since the supercritical fluid is not circulated, a phenomenon in which the temperature of the fluid is lowered occurs when the supercritical fluid is stagnated, thereby causing process defects. In addition, when the input intervals between the plurality of substrates are different, the temperature of the processing fluid is different for each input substrate, so that uniform processing is difficult.

However, according to the present invention, before the substrate processing process is performed, the supercritical fluid is exhausted through the processing space inside the chamber 3500 to sufficiently increase the temperature of the fluid flowing through the supply line and the internal temperature of the chamber. The above-described problem can be solved because the substrate can be input and the treatment process can be performed. In addition, even if a separate drain line is not installed for free circulation of the supercritical fluid, the temperature of the fluid can be sufficiently increased by supplying the supercritical fluid in advance using the supply line connected to the chamber, thereby simplifying the device. there is

According to the present invention, it is possible to provide an apparatus capable of efficiently performing the developing process. In addition, the present invention can provide an apparatus capable of preventing the pattern from collapsing or bending the leaning (Leaning) phenomenon. Also, the present invention may provide a platform for a substrate processing apparatus capable of efficiently performing a developing process and a supercritical process. In addition, the present invention may provide a platform for a substrate processing apparatus capable of cleaning a non-patterned surface of a substrate. In addition, it is possible to prevent the occurrence of reverse contamination due to contaminants on the non-patterned surface of the substrate.

The above detailed description has been described in detail based on the substrate processing apparatus according to an embodiment of the present invention. However, the present invention is not limited to the above-described examples, and can be applied to any apparatus for processing a substrate.

Claims (20)

a chamber having a processing space therein;
a supply line provided with a first on-off valve and configured to supply a processing fluid to the processing space;
a heater installed on the supply line to heat the processing fluid;
an exhaust line on which a second on-off valve is installed and exhausting the processing space; and
a controller for controlling the first on-off valve and the second on-off valve;
and the controller controls the first on-off valve and the second on-off valve to supply and exhaust the heated processing fluid to the processing space before performing a processing process on the substrate in the processing space. According to claim 1,
and the controller controls the first on-off valve and the second on-off valve to supply and exhaust the heated processing fluid to the processing space before the substrate is put into the processing space. 3. The method of claim 1 or 2,
The supply line includes an upper supply line connected to an upper wall of the chamber and a lower supply line connected to a lower wall of the chamber,
The heater includes a first heater installed on the upper supply line and a second heater installed on the lower supply line. 4. The method of claim 3,
The processing fluid is simultaneously supplied to the upper supply line and the lower supply line before the substrate is introduced into the processing space. According to claim 1,
and a filter installed on the supply line and installed downstream of the heater. According to claim 1,
The controller is configured to control the substrate to be introduced into the processing space when the processing fluid is heated to a temperature higher than a set temperature by the heater. 7. The method of claim 6,
The set temperature is lower than a critical temperature, which is a temperature at which the processing fluid starts to change to a supercritical state. According to claim 1,
The processing fluid is a fluid in a supercritical state. 4. The method of claim 3,
The first on-off valve,
an upper opening/closing valve installed on the upper supply line;
and a lower opening/closing valve installed on the lower supply line,
The controller is
A substrate processing apparatus for controlling the upper opening/closing valve and the lower opening/closing valve to be simultaneously opened and closed before the processing of the substrate is performed. 9. The method of claim 8,
The supercritical fluid is a substrate processing apparatus for drying the developer remaining on the substrate. An apparatus for processing a substrate, comprising:
an index module including a container in which the substrate is accommodated;
A processing module for performing a process on the substrate,
The processing module,
a buffer unit for temporarily storing the substrate;
a wet processing chamber for supplying a developer to develop the substrate;
a supercritical processing chamber for processing the substrate by supplying a supercritical fluid;
a heat treatment chamber for performing a heat treatment process on the substrate;
a transfer chamber including a transfer unit for transferring the substrate between the wet processing chamber, the supercritical processing chamber and the thermal treatment chamber;
The supercritical processing chamber,
a supply line for supplying the supercritical fluid to an internal processing space;
a heater installed on the supply line to heat the processing fluid;
an exhaust line exhausting the processing space; and
a controller for controlling the supply unit and the exhaust unit;
and the controller controls to supply and exhaust the heated processing fluid to the processing space before performing a processing process on the substrate in the processing space. 12. The method of claim 11,
The supply line includes an upper supply line connected to an upper wall of the chamber and a lower supply line connected to a lower wall of the chamber,
The heater includes a first heater installed on the upper supply line and a second heater installed on the lower supply line. 12. The method of claim 11,
and the controller controls the processing fluid to be simultaneously supplied to the upper supply line and the lower supply line. 12. The method of claim 11,
and a filter installed on the supply line and installed downstream of the heater. 12. The method of claim 11,
The processing fluid is a fluid in a supercritical state. A method of processing a substrate, comprising:
sealing step to close the processing space;
a pre-supply step of supplying and discharging a processing fluid into and out of the processing space;
a substrate processing step of supplying the processing fluid to the processing space to process the substrate;
and an unloading step of opening the processing space and unloading the substrate. 17. The method of claim 16,
and a loading step of loading the substrate into the processing space between the pre-supply step and the substrate processing step. 17. The method of claim 16,
The loading step is performed after the processing fluid is heated to a temperature higher than or equal to a set temperature in the pre-supply step. 17. The method of claim 16,
The processing fluid includes a first supply path supplied from an upper portion of the processing space and a second supply path supplied from a lower portion of the processing space,
wherein the processing fluid is simultaneously supplied to the first supply path and the second supply path. 17. The method of claim 16,
The method includes performing a substrate processing process on a plurality of substrates;
The pre-supply step is a substrate processing method performed for each of the plurality of substrates.

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