KR102567503B1 - Apparatus and method for treating substrate - Google Patents

Abstract

The present invention includes a chamber having a processing space therein; a supply line provided with a first on/off valve and supplying a treatment fluid to the treatment space; a heater installed on the supply line to heat the processing fluid; an exhaust line having a second on-off valve and exhausting the processing space; and a controller controlling the first on/off valve and the second on/off valve, wherein the controller supplies and exhausts the heated processing fluid to and from the processing space before performing a processing process on a substrate in the processing space. It relates to a device for processing a substrate that controls the first on-off valve and the second on-off valve to

Description

Substrate processing apparatus and method {APPARATUS AND METHOD FOR TREATING SUBSTRATE}

The present invention relates to a substrate processing apparatus and method.

In order to manufacture a semiconductor device, various processes such as deposition, photography, etching, cleaning, and the like are performed. Among them, the photo process includes a coating process, an exposure process, and a developing process. The application process is a process of applying a photoresist such as a photoresist on a substrate. The exposure process is a process of exposing a circuit pattern on a substrate by exposing light from a light source through a photo mask on the applied photoresist film. And the developing process is a process of selectively developing the exposed area of the substrate.

The developing process generally includes a developing solution supplying step, a rinsing solution supplying step, and a drying step. In the drying step, spin-drying is performed in which a spin chuck supporting the substrate is rotated and the developer or rinse liquid remaining on the substrate is dried by using the centrifugal force applied to the substrate by the spin chuck.

Recently, as the distance (CD: Critical Dimension) between patterns formed on a substrate has been miniaturized, a leaning phenomenon in which the patterns are collapsed or bent occurs when the above-described spin drying is performed. This problem is pointed out as a limitation of existing photo processing facilities.

An object of the present invention is to provide an apparatus capable of efficiently performing a developing process.

In addition, the present invention is to provide a device capable of preventing a leaning phenomenon in which patterns are collapsed or bent.

In addition, the present invention is to provide a platform of a substrate processing apparatus capable of efficiently performing a developing process and a supercritical process.

In addition, the present invention is to provide a platform of a substrate processing apparatus capable of cleaning the non-patterned surface of the substrate.

In addition, it is intended to provide a substrate processing apparatus capable of compensating for the temperature of a supercritical fluid supplied in a supercritical processing process.

The problem to be solved by the present invention is not limited thereto, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

The present invention provides an apparatus for processing a substrate. According to one embodiment of the present invention,

a chamber having a processing space therein; a supply line provided with a first on/off valve and supplying a treatment fluid to the treatment space; a heater installed on the supply line to heat the processing fluid; an exhaust line having a second on-off valve and exhausting the processing space; and a controller controlling the first on/off valve and the second on/off valve, wherein the controller supplies and exhausts the heated processing fluid to and from the processing space before performing a processing process on a substrate in the processing space. The first on-off valve and the second on-off valve may be controlled to

According to an embodiment, the controller may control the first opening/closing valve and the second opening/closing valve to supply and exhaust the heated processing fluid to and from the processing space before the substrate is introduced into the processing space. .

According to one embodiment, the supply line includes an upper supply line connected to an upper wall of the chamber and a lower supply line connected to a lower wall of the chamber, and the heater is a first heater installed on the upper supply line. and a second heater installed on the lower supply line.

According to an embodiment, the processing fluid may be simultaneously supplied to the upper supply line and the lower supply line before the substrate is introduced into the processing space.

According to one embodiment, a filter installed on the supply line and installed downstream of the heater may be included.

According to an embodiment, the controller may control the substrate to be introduced into the processing space when the processing fluid is heated to a set temperature or higher by the heater.

According to an embodiment, the set temperature may be lower than a critical temperature, which is a temperature at which the processing fluid starts to change into a supercritical state.

According to one embodiment, the treatment fluid may be a fluid in a supercritical state.

According to an embodiment, the first opening/closing valve includes an upper opening/closing valve installed on the upper supply line and a lower opening/closing valve installed on the lower supply line, and the controller performs a process of processing the substrate Before this proceeds, the upper opening/closing valve and the lower opening/closing valve may be controlled to open and close simultaneously.

According to an embodiment, the supercritical fluid may dry the developer remaining on the substrate.

The present invention provides an apparatus for processing a substrate. According to one embodiment, an index module including a container in which the substrate is accommodated; and a processing module for performing a process on the substrate, wherein the processing module includes: a buffer unit for temporarily storing the substrate; a wet treatment chamber supplying a developing solution to develop the substrate; a supercritical processing chamber supplying a supercritical fluid to process the substrate; a transfer chamber including a heat treatment chamber for performing a heat treatment process on the substrate, and a transport unit for transporting the substrate between the wet processing chamber, the supercritical processing chamber, and the heat treatment chamber, wherein the supercritical processing chamber A supply line for supplying the supercritical fluid to an internal processing space; a heater installed on the supply line to heat the processing fluid; an exhaust line exhausting the processing space; and a controller configured to control the supply unit and the exhaust unit to supply and exhaust the heated processing fluid to and from the processing space before a processing process is performed on the substrate in the processing space. can

According to one embodiment, the supply line includes an upper supply line connected to an upper wall of the chamber and a lower supply line connected to a lower wall of the chamber, and the heater is a first heater installed on the upper supply line. and a second heater installed on the lower supply line.

According to an embodiment, the controller may control the treatment fluid to be simultaneously supplied to the upper supply line and the lower supply line.

According to one embodiment, a filter installed on the supply line and installed downstream of the heater may be included.

According to one embodiment, the treatment fluid may be a fluid in a supercritical state.

The present invention provides a method of processing a substrate. According to one embodiment, a sealing step of closing the processing space; a pre-supply step of supplying and discharging a treatment fluid into and out of the treatment space; a substrate processing step of processing a substrate by supplying the processing fluid into the processing space; A carrying out step of opening the processing space and carrying out the substrate may be included.

According to an embodiment, a carrying step of carrying the substrate into the processing space may be included between the pre-supplying step and the substrate processing step.

According to one embodiment, the carrying in may be performed after the treatment fluid is heated to a set temperature or higher in the pre-supplying.

According to an embodiment, the processing fluid includes a first supply path supplied from an upper portion of the processing space and a second supply path supplied from a lower portion of the processing space, and the processing fluid includes the first supply path and the second supply path. It may be simultaneously supplied through the second supply path.

According to one embodiment, the method may perform a substrate treatment process on a plurality of substrates, and the pre-supplying step may be performed on each of the plurality of substrates.

The present invention can provide an apparatus capable of efficiently performing the developing process.

In addition, the present invention can provide a device capable of preventing a leaning phenomenon in which patterns collapse or are bent.

In addition, the present invention can provide a platform of a substrate processing apparatus capable of efficiently performing a developing process and a supercritical process.

In addition, the present invention can provide a platform of a substrate processing apparatus capable of cleaning the non-patterned surface of a substrate.

In addition, reverse contamination due to contaminants on the non-patterned surface of the substrate can be prevented.

In addition, it is possible to provide a substrate processing apparatus capable of compensating the temperature of the supercritical fluid supplied in the supercritical processing process.

1 is a diagram illustrating a substrate processing apparatus in which a coating process is performed according to an embodiment of the present invention.
2 is a diagram illustrating a substrate processing apparatus in which an exposure process is performed according to an embodiment of the present invention.
3 is a diagram illustrating a substrate processing apparatus in which a developing process is performed according to an embodiment of the present invention.
4 is a cross-sectional view of the substrate processing apparatus of FIG. 3 viewed from one direction.
5 is a cross-sectional view of the substrate processing apparatus of FIG. 3 viewed from a direction opposite to one direction.
6 is a plan view of the substrate processing apparatus of FIG. 3 .
FIG. 7 is a diagram showing an example of a hand of the transfer robot of FIG. 6 .
8 is a plan view schematically showing an example of a heat treatment chamber of a substrate processing apparatus according to an embodiment of the present invention.
9 is a front cross-sectional view of the heat treatment chamber of FIG. 8;
10 is a diagram schematically illustrating a rear surface cleaning chamber of a substrate processing apparatus according to an embodiment of the present invention.
11 is a diagram schematically illustrating a supercritical chamber of a substrate processing apparatus according to an embodiment of the present invention.
12 is a diagram schematically illustrating a wet processing chamber of a substrate processing apparatus according to an embodiment of the present invention.
13 is a flowchart of a substrate processing method according to an embodiment of the present invention.
14 is a diagram illustrating a supercritical chamber according to an embodiment of the present invention.
15 is a graph illustrating the temperature of a processing fluid and input and output timing of a substrate according to an embodiment of the present invention.

Since the present invention can apply various transformations and have various embodiments, specific embodiments will be illustrated in the drawings and described in detail in the detailed description. However, it should be understood that this is not intended to limit the present invention to specific embodiments, and includes all transformations, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the present invention, if it is determined that a detailed description of related known technologies may obscure the gist of the present invention, the detailed description will be omitted.

Terms used in this application are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, the terms "include" or "have" are intended to designate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features It should be understood that the presence or addition of numbers, steps, operations, components, parts, or combinations thereof is not precluded.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. These terms are only used for the purpose of distinguishing one component from another.

A controller (not shown) may control the entire operation of the substrate processing apparatus. The controller (not shown) may include a Central Processing Unit (CPU), Read Only Memory (ROM), and Random Access Memory (RAM). The CPU executes desired processing such as liquid processing and drying processing to be described later, according to various recipes stored in these storage areas. In the recipe, process time, process pressure, process temperature, and various gas flow rates, which are control information of the device for process conditions, are input. On the other hand, recipes indicating these programs and processing conditions may be stored in a hard disk or semiconductor memory. In addition, the recipe may be set in a predetermined position in the storage area while being accommodated in a storage medium readable by a portable computer such as a CD-ROM or DVD.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings. description is omitted.

1 is a diagram showing a substrate processing apparatus in which a coating process is performed according to an embodiment of the present invention, and FIG. 2 is a diagram showing a substrate processing apparatus in which an exposure process is performed according to an embodiment of the present invention, 3 is a diagram illustrating a substrate processing apparatus in which a developing process is performed according to an embodiment of the present invention.

Referring to FIGS. 1 to 3 , in the present invention, a coating process, an exposure process, and a developing process may be performed in different devices. Specifically, a liquid film may be formed by applying a photoresist on the substrate W in the substrate processing apparatus in which the coating process of FIG. 1 is performed. In the substrate processing apparatus in which the coating process is performed, a bake process of baking the substrate may be performed before or after forming the liquid film on the substrate W. The bake process may be a process of heating the substrate W at a process temperature or higher in an enclosed space. In the baking process performed after forming the film on the substrate W, the film thickness may be adjusted to a set thickness by heating and volatilizing the photoresist film or the like applied on the substrate. After the coating process, the substrate W may be transported to a substrate processing apparatus where the exposure process of FIG. 2 is performed. The exposure process may be a process of exposing a circuit pattern on a substrate W on which a photoresist film is formed. The exposure process may be performed by irradiating an exposure beam onto the substrate W. The exposure process may include a process of exposing the center of the substrate (W) and an edge exposure process of exposing the edge of the substrate (W). After the exposure process is performed, the substrate W may be transported to a substrate processing apparatus where the developing process of FIG. 3 is performed. The developing process may be a process of selectively developing an exposed area of the substrate W. Hereinafter, a substrate processing apparatus in which a developing process is performed will be described in more detail with reference to drawings.

4 is a cross-sectional view of the substrate processing apparatus of FIG. 3 viewed from one direction, and FIG. 5 is a cross-sectional view of the substrate processing apparatus of FIG. 3 viewed from a direction opposite to one direction.

Referring to FIGS. 3 to 6 , the substrate processing apparatus 1 may include an index module 20 and a treating module 30 . According to one embodiment, the index module 20 and the processing module 30 may be sequentially arranged in a line. Hereinafter, the direction in which the index module 20 and the processing module 30 are arranged is referred to as the X-axis direction 12, and the direction perpendicular to the X-axis direction 12 when viewed from above is referred to as the Y-axis direction 14. And, the direction perpendicular to both the X-axis direction 12 and the Y-axis direction 14 is referred to as the Z-axis direction 16.

The index module 20 may transfer the substrate W from the container 10 in which the substrate W is accommodated to the processing module 30 and may receive the substrate W after processing has been completed into the container 10 . The longitudinal direction of the index module 20 may be provided as the Y-axis direction 14 . The index module 20 may include a load port 22 and an index frame 24 . Based on the index frame 24, the load port 22 may be located on the opposite side of the processing module 30. The container 10 in which the substrates W are accommodated may be placed in the load port 22 . A plurality of load ports 22 may be provided, and the plurality of load ports 22 may be disposed along the Y-axis direction 14 .

As the container 10, an airtight container 10 such as a Front Open Unified Pod (FOUP) may be used. The vessel 10 may be placed on the loadport 22 by an operator or a transportation means (not shown) such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle. there is.

An index robot 2200 may be provided inside the index frame 24 . A guide rail 2300 provided in the Y-axis direction 14 is provided in the index frame 24 , and the index robot 2200 may be provided to be movable on the guide rail 2300 . The index robot 2200 includes a hand 2220 on which a substrate W is placed, and the hand 2220 moves forward and backward, rotates in the Z-axis direction 16 as an axis, and rotates in the Z-axis direction 16. It may be provided to be movable along.

According to an embodiment of the present invention, the processing module 30 may perform a processing process on the substrate (W). For example, the processing module 30 may perform a wet treatment process, a heat treatment process, a backside cleaning process, and a supercritical process on the substrate W.

The processing module 30 includes a processing block 30a. The processing block 30a may perform a processing process on the substrate W. A plurality of processing blocks 30a are provided, and they may be provided stacked on top of each other. According to the embodiment of FIG. 3 , three processing blocks 30a may be provided. According to an example, the three processing blocks 30a may perform the same process and may be provided with the same structure.

3 to 6, the processing block 30a includes a transfer chamber 3100, a wet processing chamber 3200, a backside cleaning chamber 3300, a heat treatment chamber 3400, a supercritical chamber 3500, and a buffer chamber 3600.

The transport chamber 3100 may transport the substrate W between the wet processing chamber 3200, the back surface cleaning chamber 3300, the heat treatment chamber 3400, and the supercritical chamber 3500 within the processing block 30a. The conveyance chamber 3100 may have its longitudinal direction parallel to the X-axis direction 12 . A transfer unit 3120 may be provided in the transfer chamber 3100 . The transfer unit 3120 may transfer the substrate W between the wet processing chamber 3200 , the back surface cleaning chamber 3300 , the heat treatment chamber 3400 , and the supercritical chamber 3500 . According to one example, the transfer unit 3120 has a hand A on which a substrate W is placed, and the hand A moves forward and backward, rotates about the Z-axis direction 16, and rotates in the Z-axis direction. It may be provided movably along (16). A guide rail 3140 whose longitudinal direction is parallel to the X-axis direction 12 is provided in the transfer chamber 3100, and the transfer unit 3140 can be provided to be movable on the guide rail 3300. .

FIG. 7 is a diagram showing an example of a hand of the transfer robot of FIG. 6 . Referring to FIG. 7 , the hand A may include a base 3128 and a support protrusion 3129 . The base 3128 may have an annular ring shape in which a part of the circumference is bent. The base 3128 may have an inner diameter larger than the diameter of the substrate W. The support protrusion 3129 may extend inwardly from the base 3128 . A plurality of support protrusions 3129 are provided and may support an edge region of the substrate W. According to one example, four support protrusions 3129 may be provided at equal intervals.

The wet processing chamber 3200 may perform a liquid processing process on the substrate W by supplying a processing liquid. The wet processing chamber 3200 may perform a developing process on the substrate W. At this time, the treatment liquid discharged from the wet treatment chamber 3200 may be a developing solution. The wet processing chamber 3200 may discharge a developer solution to the pattern surface of the substrate W.

The wet processing chamber 3200 may be disposed on one side of the transfer chamber 3100 . The wet processing chamber 3200 may include a plurality of wet processing chambers 3200 . A plurality of wet processing chambers 3200 may be stacked on top of each other. The wet treatment chamber 3200 may face the back cleaning chamber 3300 or the heat treatment chamber 3400 with the transfer chamber 3100 therebetween. The wet processing chamber 3200 may be disposed between the index module 20 and the supercritical chamber 3500 . The number of wet processing chambers 3200 corresponding to the number of supercritical chambers 3500 may be provided. The number of wet processing chambers 3200 may be greater than that of the backside cleaning chambers 3300 . The wet processing chamber 3200 may be provided in greater numbers than the heat treatment chamber 3400 . However, it is not limited thereto, and may be changed in consideration of the footprint of the device, process efficiency, and the like.

Referring to the foregoing description, it has been described that the substrate W developed in the wet processing chamber 3200 is subjected to a dry processing in the supercritical chamber 3500 without cleaning processing. However, as a modified example, the wet processing chamber 3200 may further include a cleaning liquid supply member supplying a cleaning liquid for cleaning the non-patterned surface of the substrate W. At this time, the cleaning liquid may include a thinner. In this case, the supercritical chamber 3500 may dry the thinner remaining on the substrate W.

12 is a diagram schematically illustrating a wet processing chamber of a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 12 , the wet processing chamber 3200 may develop the substrate W by applying a developing solution to the substrate W. A housing (not shown), a support unit 3210, a treatment liquid supply member 3220, and a recovery member 3230 may be included. The housing of the wet processing chamber 3200 may provide a processing space in which the substrate W is processed.

The support unit 3210 may support the substrate W. The support member 3100 may rotate the supported substrate S. The support unit 3210 may include a support plate 3211 , a support pin 3212 , a chuck pin 3213 , a rotation shaft 3214 , and a rotation actuator 3215 . The support plate 3211 may have an upper surface having the same shape as or a similar shape to that of the substrate W. A support pin 3212 and a chuck pin 3213 may be provided on an upper surface of the support plate 3211 . The support pins 3212 may support the lower surface of the substrate W. The support pin 3212 may protrude upward from the upper surface of the support plate 3211 . The chuck pin 3213 may fix the supported substrate W. The chuck pin 3213 may support the side of the supported substrate W. Through this, it is possible to prevent the rotating substrate W from being separated in the lateral direction by the rotational force. A rotation shaft 3214 may be connected to a lower portion of the support plate 3212 . The rotating shaft 3214 may rotate the support plate 3211 by receiving rotational force from the rotation driver 3215 . Accordingly, the substrate W seated on the support plate 3211 may be rotated. The chuck pin 3213 may prevent the substrate W from leaving its original position.

The supply member 3220 may spray the treatment liquid to the substrate W. The treatment solution may include a developer solution. The supply member 3220 may include a nozzle 3221 , a nozzle bar 3222 , a nozzle shaft 3223 and a nozzle shaft actuator 3224 . The nozzle 3221 may supply a developing solution to the substrate W seated on the support plate 3211 . The nozzle 3221 may be formed on a lower surface of one end of the nozzle bar 3222 . A nozzle bar 3222 may be coupled to a nozzle shaft 3223. The nozzle shaft 3223 may be provided so as to be elevated or rotated. The nozzle shaft driver 3224 may adjust the position of the nozzle 3221 by lifting or rotating the nozzle shaft 3223 . The nozzle 3221 may be connected to a developer supply line (not shown). The developer supply line may be connected to a developer supply source (not shown). A valve may be installed in the developer supply line.

The recovery member 3230 may include a recovery cylinder 3231, a recovery line 3232, a lift bar 3233, and a lift driver 3234. The collection container 3231 may be provided in an annular ring shape surrounding the support plate 3211 . A plurality of collection containers 3231 may be provided. The plurality of collection containers 3231 may be provided in a ring shape sequentially away from the support plate 3211 when viewed from above. The recovery container 3231 may be provided with a higher height as the distance from the support plate 3211 increases. A recovery hole 323i into which the developer scattered from the substrate W flows may be formed in a space between the recovery cylinders 3231 . A recovery line 3233 may be formed on a lower surface of the recovery container 3231 . The lifting bar 3234 may be connected to the recovery container 3231. The lift bar 3231 may receive power from the lift driver 3235 to move the collection container 3231 up and down. The lifting bar 3233 may be connected to the collection container 3231 disposed at the outermost part when there are a plurality of collection containers 3231 . The lift actuator 3235 may adjust the recovery port 3232 of the plurality of recovery ports 3232 into which the scattered treatment liquid flows by elevating the recovery cylinder 3231 through the lift bar 3234 .

In another embodiment, the wet processing chamber 3200 may perform a cleaning process on the substrate (W). In this case, the treatment liquid discharged from the wet treatment chamber 3200 may be a cleaning liquid. The cleaning liquid may include a chemical, pure water (DIW), and an organic solvent. The organic solvent may include isopropyl alcohol (IPA). In this case, the nozzle member 3220 of the wet processing chamber 3200 may include a chemical supply member, a pure water supply member, and an organic solvent supply member, respectively. In the wet processing chamber 3200 , the pattern surface of the substrate W may be cleaned. In this case, the substrate processing apparatus does not include the heat treatment chamber 3400 . Accordingly, the number of wet processing chambers 3200 and back surface cleaning chambers 3300 corresponding to each other may be provided.

The backside cleaning chamber 3300 may clean the non-patterned surface of the substrate W. The rear cleaning chamber 3300 may be disposed on one side of the transfer chamber 3100 . The back surface cleaning chamber 3300 may include a plurality of back surface cleaning chambers 3300 . The backside cleaning chamber 3300 and the heat treatment chamber 3400 may be stacked vertically. The back surface cleaning chamber 3300 may face the wet processing chamber 3200 with the transfer chamber 3100 interposed therebetween. The back surface cleaning chamber 3300 may be disposed between the index module 20 and the supercritical chamber 3500 . The back surface cleaning chamber 3300 may be provided in fewer numbers than the supercritical chamber 3500 . The backside cleaning chamber 3300 may be provided in fewer numbers than the wet processing chamber 3200 . The back surface cleaning chamber 3300 may be provided in a number corresponding to that of the heat treatment chamber 3400 . However, it is not limited thereto, and may be changed in consideration of the footprint of the device, process efficiency, and the like.

10 is a diagram schematically illustrating a rear surface cleaning chamber of a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 10 , a rear surface cleaning chamber 3300 may include a housing 3310, a processing container 3320, a substrate support unit 3330, an inversion unit 3340, and a cleaning unit 3350.

The housing 3310 may provide a processing space in which the non-patterned surface of the substrate W is cleaned. The processing vessel 3320 may be disposed inside the housing 3310 . The processing vessel 3320 may have a cylindrical shape with an open top and provide a processing space for processing the substrate W. The open upper surface of the processing container 3320 may be provided as a path for transporting and transporting the substrate W. A substrate support unit 3330 may be positioned inside the processing container 3320 . The substrate support unit 3330 may support the substrate W and rotate the substrate during the process.

The substrate support unit 3330 may be installed inside the processing container 3320 . The substrate support unit 3330 may support the substrate W during the process. The substrate support unit 3330 may be rotated by a driving unit 3332 to be described later while the process is in progress. The substrate support unit 3330 may include a spin head 3334 , a support shaft 3336 , and a driving unit 3332 .

The spin head 3334 may include a circular upper surface. A support shaft 3336 supporting the spin head 3334 may be connected to a lower portion of the spin head 3334 . The support shaft 3336 may be rotated by a driving unit 3332 connected to a lower end thereof. The driving unit 3332 may be provided with a motor or the like. As the support shaft 3336 rotates, the spin head 3334 and the substrate W may rotate.

The inverting unit 3340 may be positioned on top of the processing vessel 3320 . The inverting unit 3340 may invert the substrate W so that the non-patterned surface of the substrate faces upward and load the substrate W into the spin head 3334 . The reversing unit 3340 includes a holding portion 3342 in which the substrate W, which is a processing target, is loaded, a reversing portion 3344 for inverting the holding portion 3342, and an elevating portion 3346 for elevating the reversing portion 3344. ) may be included. At this time, the reversing unit 3344 is for inverting the holding unit 3342 by 180 degrees, and a driving device 3348 such as a motor may be used. The elevating unit 3346 is for elevating the reversing unit 3344 in the vertical direction (a direction parallel to the axial direction of the support shaft 3336), and a linear driving device such as a cylinder, a linear motor, or a lead screw using a motor can be used. can

The holding part 3342 of the inversion unit 3340 may simultaneously perform a buffer function in which a substrate W to be inverted as well as a substrate W to be temporarily standby may be placed.

The cleaning unit 3350 may supply cleaning fluid to the substrate W whose non-patterned surface is upwardly exposed by the inversion unit 3340 . The cleaning unit 3350 may discharge cleaning fluid toward the non-patterned surface of the substrate W. As another example, the cleaning unit 3350 may perform physical cleaning on the non-patterned surface of the substrate W using a brush or the like. The cleaning unit 3350 includes a nozzle 3352 for discharging cleaning fluid, a nozzle arm 3354 supporting the nozzle 3352, and a support shaft 3356 supporting the nozzle arm 3354 and moving the nozzle arm 3354. , and may include a driving unit 3258 for applying a driving force to the support shaft 3356.

The heat treatment chamber 3400 may perform a heat treatment process on the substrate W. The heat treatment chamber 3400 may be disposed on one side of the transfer chamber 3100 . The heat treatment chamber 3400 may include a plurality of heat treatment chambers 3400 . The heat treatment chamber 3400 may be vertically stacked with the back surface cleaning chamber 3300 . The heat treatment chamber 3400 may face the wet treatment chamber 3200 with the transfer chamber 3100 interposed therebetween. The heat treatment chamber 3400 may be disposed between the index module 20 and the supercritical chamber 3500 . The heat treatment chamber 3400 may be provided in fewer numbers than the supercritical chamber 3500 . The backside cleaning chamber 3300 may be provided in fewer numbers than the wet processing chamber 3200 . The heat treatment chamber 3400 may be provided in a number corresponding to that of the rear surface cleaning chamber 3300 . However, it is not limited thereto, and may be changed in consideration of the footprint of the device, process efficiency, and the like.

8 is a plan view schematically showing an example of a heat treatment chamber of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 9 is a front cross-sectional view of the heat treatment chamber of FIG. 8 . Referring to FIGS. 8 and 9 , a heat treatment chamber 3400 may include a housing 3410 , a cooling unit 3420 , a heating unit 3430 , and a transfer plate 3440 . The heat treatment chamber 3400 may perform a heat treatment process on the substrate W. The heat treatment process may include a cooling process and a heating process.

The housing 3410 may be provided in a substantially rectangular parallelepiped shape. An entrance (not shown) through which the substrate W is taken in and out may be formed on a sidewall of the housing 3410 . The intake port may remain open. A door (not shown) may be provided to selectively open and close the carry-in port. A cooling unit 3420 , a heating unit 3430 , and a transfer plate 3440 may be provided within the housing 3410 . A cooling unit 3420 and a heating unit 3430 may be provided side by side along the Y-axis direction 14 . According to one example, the cooling unit 3420 may be located closer to the transfer chamber 3100 than the heating unit 3430 .

The cooling unit 3420 may include a cooling plate 3422 . The cooling plate 3422 may have a substantially circular shape when viewed from above. A cooling member 3424 may be provided on the cooling plate 3422 . According to one example, the cooling member 3424 is formed inside the cooling plate 3422 and may be provided as a passage through which cooling fluid flows.

The heating unit 3430 may include a heating plate 3432, a cover 3434, and a heater 3433. The heating plate 3432 may have a substantially circular shape when viewed from above. The heating plate 3432 may have a larger diameter than the substrate W. A heater 3433 may be installed on the heating plate 3432 . The heater 3433 may be provided as a heating resistor to which current is applied. Lift pins 3438 capable of being driven vertically along the Z-axis direction 16 may be provided on the heating plate 3432 . The lift pins 3438 receive the substrate W from a transfer unit outside the heating unit 3430 and set it down on the heating plate 3432 or lift the substrate W from the heating plate 3432 to move it outside the heating unit 3430. It can be handed over by means of transport. According to one example, three lift pins 3438 may be provided. The cover 3434 may include a space with an open bottom therein. The cover 3434 is positioned above the heating plate 3432 and can be moved vertically by the driver 3436. When the cover 3434 contacts the heating plate 3432, a space surrounded by the cover 3434 and the heating plate 3432 may serve as a heating space for heating the substrate W.

The transfer plate 3440 may have a substantially disk shape and may have a diameter corresponding to that of the substrate W. A notch 3444 may be formed at an edge of the transfer plate 3440 . The notch 3444 may have a shape corresponding to the protrusion 3129 formed on the hand A of the transfer robot 3120 described above. In addition, the number of notches 3444 corresponding to the protrusions 3129 formed on the hand A may be formed at positions corresponding to the protrusions 3129 . When the vertical position of the hand A and the transfer plate 3440 is changed at the position where the hand A and the transfer plate 3440 are aligned in the vertical direction, the substrate W is transferred between the hand A and the transfer plate 3440. transfer can take place. The transport plate 3440 is mounted on the guide rail 3449 and can be moved along the guide rail 3449 by an actuator 3446 . A plurality of slit-shaped guide grooves 3442 may be provided in the transport plate 3440 . The guide groove 3442 may extend from an end of the transport plate 3440 to an inside of the transport plate 3440 . The guide grooves 3442 may have a longitudinal direction along the Y-axis direction 14 , and the guide grooves 3442 may be spaced apart from each other along the X-axis direction 12 . The guide groove 3442 may prevent the transfer plate 3440 and the lift pin from interfering with each other when the transfer of the substrate W is performed between the transfer plate 3440 and the heating unit 3430 .

The heating of the substrate W is performed in a state where the substrate W is directly placed on the heating unit 3430, and the cooling of the substrate W is carried out by the transfer plate 3440 on which the substrate W is placed is a cooling plate 3222. made in contact with The transfer plate 3440 may be made of a material having a high heat transfer rate so that heat transfer between the cooling plate 3422 and the substrate W is good. According to one example, the transport plate 3440 may be made of a metal material.

The supercritical chamber 3500 processes the substrate (W) by supplying a supercritical fluid to the substrate (W). For example, the supercritical chamber 3500 may dry the substrate (W) by supplying a supercritical fluid to the substrate (W). The supercritical chamber 3500 may perform a drying process on the substrate W processed in the wet processing chamber 3200 . In one embodiment, the supercritical chamber 3500 may perform a drying process on the substrate W developed in the wet processing chamber 3200 . At this time, in the supercritical chamber 3500, the developer remaining on the substrate W may be dried. In one embodiment, the supercritical chamber 3500 may perform a drying process on the substrate W cleaned in the wet processing chamber 3200 . At this time, in the supercritical chamber 3500, the organic solvent remaining on the substrate W may be dried.

The supercritical chamber 3500 may be disposed on both sides of the transfer chamber 3100 . The supercritical chamber 3500 may include a plurality of supercritical chambers 3500 . The plurality of supercritical chambers 3500 may be stacked vertically with each other. The supercritical chamber 3500 may be disposed outside the wet processing chamber 3200 , the back surface cleaning chamber 3300 , and the heat treatment chamber 3400 in the second direction 14 . The supercritical chambers 3500 respectively disposed on one side and the other side of the transfer chamber 3100 may be disposed to face each other with respect to the transfer chamber 3100 when viewed from above. However, it is not limited thereto, and may be changed in consideration of the footprint of the device, process efficiency, and the like.

Conventionally, when drying the substrate W after developing, a spin drying method in which the substrate W is rotated and dried is used. However, as the patterns formed on the substrate become finer, the conventional spin-drying method causes a leaning phenomenon in which the patterns are collapsed or bent. However, according to an embodiment of the present invention, immediately after the development process is performed on the substrate W, the substrate W is transferred to the supercritical chamber 3500 in a state where the developer or cleaning solution remains on the substrate W. is returned In the supercritical chamber 3500, since the supercritical fluid is supplied to the substrate and dried, the aforementioned leaning phenomenon can be minimized. In addition, since the substrate W is transported with the developing solution or the cleaning solution remaining on the substrate W, it is possible to prevent the substrate W from being dried and degraded while being transported.

11 is a diagram schematically illustrating a supercritical chamber of a substrate processing apparatus according to an embodiment of the present invention.

The supercritical chamber 3500 removes the liquid on the substrate W by using supercritical fluid. The supercritical chamber 3500 has a body 3520, a support 3540, a fluid supply unit 3560, and a blocking plate 3580. The body 3520 provides an interior space 3502 in which a drying process is performed. The body 3520 has an upper body 3522 (upper body) and a lower body 3524 (lower body), and the upper body 3522 and lower body 3524 are combined to provide the aforementioned inner space 3502. The upper body 3522 is provided on top of the lower body 3524. The position of the upper body 3522 is fixed, and the lower body 3524 can be moved up and down by a driving member 3590 such as a cylinder. When the lower body 3524 is separated from the upper body 3522, the inner space 3502 is opened, and at this time, the substrate W is carried in or taken out. During the process, the lower body 3524 comes into close contact with the upper body 3522 so that the inner space 3502 is sealed from the outside. The drying chamber 3500 has a heater 3570. According to one example, the heater 3570 is located inside the wall of the body 3520. The heater 3570 heats the inner space 3502 of the body 3520 so that the fluid supplied into the inner space of the body 3520 maintains a supercritical state. The support 3540 supports the substrate W within the inner space 3502 of the body 3520 . The support body 3540 has a fixing rod 3542 and a cradle 3544. The fixing rod 3542 is fixed to the upper body 3522 so as to protrude downward from the lower surface of the upper body 3522 . The fixing rod 3542 is provided in a vertical direction in its longitudinal direction. A plurality of fixing rods 3542 are provided and are spaced apart from each other. The fixing rods 3542 are arranged so that the substrate W does not interfere with the fixing rods 3542 when the substrate W is carried in or out of the space surrounded by them. A cradle 3544 is coupled to each of the fixing rods 3542 . The cradle 3544 extends from the lower end of the fixing rod 3542 toward a space surrounded by the fixing rods 3542 . Due to the structure described above, the edge area of the substrate W carried into the inner space 3502 of the body 3520 is placed on the holder 3544, and the entire upper surface area of the substrate W is placed on the substrate W. A central area of the bottom surface of the substrate W and a part of the edge area of the bottom surface of the substrate W are exposed to the drying fluid supplied to the inner space 3502 . The fluid supply unit 3560 supplies drying fluid to the inner space 3502 of the body 3520. According to one example, the drying fluid may be supplied to the inner space 3502 in a supercritical state. In contrast, the drying fluid may be supplied to the inner space 3502 in a gaseous state and undergo a phase change to a supercritical state in the inner space 3502 . According to one example, the fluid supply unit 3560 has a main supply line 3562, an upper branch line 3564, and a lower branch line 3566. An upper branch line 3564 and a lower branch line 3566 branch off from the main supply line 3562. The upper branch line 3564 is coupled to the upper body 3522 to supply a drying fluid from the top of the substrate W placed on the support 3540 . According to one example, the upper branch line 3564 is coupled to the center of the upper body 3522. The lower branch line 3566 is coupled to the lower body 3524 to supply a drying fluid from the lower portion of the substrate W placed on the support 3540 . According to one example, the lower branch line 3566 is coupled to the center of the lower body 3524. An exhaust line 3550 is coupled to the lower body 3524. The supercritical fluid in the internal space 3502 of the body 3520 is exhausted to the outside of the body 3520 through an exhaust line 3550 . A blocking plate 3580 may be disposed in the inner space 3502 of the body 3520 . The blocking plate 3580 may be provided in a disk shape. The blocking plate 3580 is supported by the support 3582 so as to be spaced apart from the bottom surface of the body 3520 to the top. The supports 3582 are provided in a rod shape, and a plurality of them are spaced apart from each other by a predetermined distance.

is placed When viewed from above, the blocking plate 3580 may overlap the outlet of the lower branch line 3566 and the inlet of the exhaust line 3550 . The blocking plate 3580 may prevent the substrate W from being damaged by direct discharge of the drying fluid supplied through the lower branch line 3566 toward the substrate W.

A plurality of buffer chambers 3600 may be provided. Some of the buffer chambers 3600 may be disposed between the index module 20 and the transfer chamber 3100 . Hereinafter, these buffer chambers are referred to as a front buffer 3602 (front buffer). The front buffers 3602 are provided in plural numbers and are positioned to be stacked with each other along the vertical direction. Some of the buffer chambers 3602 and 3604 may be disposed outside the transfer chamber 3100 in the second direction 12 . These buffer chambers are referred to as rear buffers 3604. The rear buffers 3604 are provided in plural numbers and may be stacked on top of each other in the vertical direction. Each of the front-side buffers 3602 and the back-side buffers 3604 may temporarily store a plurality of substrates (W). The substrate W stored in the shearing buffer 3602 may be carried in or out by the index robot 2200 and the transfer robot 3120 . The substrate W stored in the rear buffer 3804 may be carried in or out by the transfer robot 3120 .

The substrate processing apparatus may further include a controller (not shown) for controlling the transfer unit. In one embodiment, the controller may control the transfer unit so that the substrate W is transferred into the supercritical chamber 3500 after being transferred into the wet processing chamber 3200 . The substrate W may be developed using a developer in the wet processing chamber 3200, and the developer remaining on the substrate W may be removed in the supercritical chamber 3500.

In another embodiment, the controller may control the transfer unit so that the substrate W is transferred into the supercritical chamber 3500 after being transferred into the wet processing chamber 3200 . In this case, the substrate W is subjected to a cleaning process on the pattern surface of the substrate W in the wet processing chamber 3200, and the organic solvent remaining on the substrate W in the supercritical processing chamber 3500 can be removed.

Hereinafter, a supercritical chamber according to the present invention will be described in more detail with reference to the drawings.

14 is a diagram illustrating a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 14 , the substrate processing apparatus includes a supply unit 4000 supplying a processing fluid to a processing space 3502 inside the supercritical chamber 3500 and an exhaust unit exhausting the atmosphere inside the supercritical chamber 3500. 5000 and a controller 6000 controlling the supply unit 4000 and the exhaust unit 5000.

The supply unit 4000 includes a supply source (not shown) in which processing fluid is stored, a main supply line 4100 connected to the supply source, and an upper supply line branched off from the main supply line 4100 and connected to the upper wall of the chamber 3500. 4200 and a lower supply line 4300 branched off from the main supply line 4100 and connected to the lower wall of the chamber 3500. At this time, the direction toward the supply source is referred to as upstream, and the direction opposite to the upstream is referred to as downstream. In addition, the supply unit 4000 includes a first heater 4210 installed on the upper supply line 4200 to heat the processing fluid, a first temperature sensor 4220, a first filter 4230, and an upper part. An on/off valve 4240 may be included. In this case, the first heater 4210, the first temperature sensor 4220, the first filter 4230, and the upper opening/closing valve 4240 may be installed in order from upstream to downstream. In addition, the supply unit 4000 includes a second heater 4310 installed on the lower supply line 4300 to heat the processing fluid, a second temperature sensor 4320, a second filter 4330, and a lower An on/off valve 4340 and a first pressure sensor 4350 may be included. The second heater 4310, the second temperature sensor 4320, the second filter 4330, the lower opening/closing valve 4340, and the first pressure sensor 4350 are sequentially connected from upstream to downstream. can be placed.

The exhaust unit 5000 includes an exhaust line 5100 coupled to the lower wall of the chamber 3500, an on/off valve 5110 installed on the exhaust line 5100, a pressure sensor 5120, and a temperature sensor 5130. ) and an outlet (not shown). In this case, the opening/closing valve 5110, the pressure sensor 5120, the temperature sensor 5130, and the outlet may be sequentially installed in a direction away from the chamber 3500. That is, the opening/closing valve 5110, the pressure sensor 5120, the temperature sensor 5130, and the outlet may be sequentially installed in the chamber 3500 toward the outlet.

The process fluid may include a supercritical fluid. Specifically, CO2 and SCCO2 may be included. The processing fluid may be supplied to the processing space 3502 of the chamber 3500 through the main supply line 4100 , the upper supply line 4200 , and the lower supply line 4300 . The first heater 4210 may heat the processing fluid passing through the upper supply line 4200 . The first temperature sensor 4220 may sense the temperature of the processing fluid heated by the first heater 4120 . The first temperature sensor 4210 may transmit the sensed temperature of the processing fluid to the controller 6000 . The first filter 4210 may filter the processing fluid passing through the upper supply line 4200 . The first filter 4210 may remove foreign substances and impurities contained in the treatment fluid passing through the upper supply line 4200 . The first filter 4230 may be installed between the first heater 4210 and the upper opening/closing valve 4240. The upper opening/closing valve 4240 may control the flow rate of the processing fluid introduced through the inlet of the upper wall of the chamber 3500 .

The second heater 4310 may heat the processing fluid passing through the lower supply line 4300 . The second temperature sensor 4320 may sense the temperature of the processing fluid heated by the second heater 4310 . The second temperature sensor 4320 may transmit the sensed temperature of the processing fluid to the controller 6000 . The second filter 4330 may filter the processing fluid passing through the lower supply line 4300 . The second filter 4330 may remove foreign substances and impurities contained in the processing fluid passing through the lower supply line 4300 . The second filter 4330 may be installed between the second heater 4310 and the lower opening/closing valve 4340. The lower opening/closing valve 4340 may control the flow rate of the processing fluid introduced through the inlet of the lower wall of the chamber 3500 . The first pressure sensor 4350 may sense the pressure of the processing fluid flowing through the lower supply line 4300 . The first pressure sensor 4350 may transmit the sensed pressure to the controller 6000 .

The exhaust unit 5000 may discharge the processing fluid inside the chamber 3500 to the outside. The processing fluid inside the chamber 3500 may be discharged to the outside through the exhaust line 5100 . The opening/closing valve 5110 may control the exhaust flow rate by adjusting the flow rate of the processing fluid flowing through the exhaust line 5100 . The pressure sensor 5120 may sense the pressure of the processing fluid flowing through the exhaust line 5100 and transmit the sensed value to the controller 6000 . The temperature sensor 5130 may sense the temperature of the processing fluid flowing through the exhaust line 5100 .

The controller 6000 includes an upper opening/closing valve 4240, a lower opening/closing valve 4340, and an exhaust unit 5000 to supply and exhaust a heated processing fluid to and from the processing space before processing the substrate in the processing space. ) can control the opening/closing valve 5110. At this time, the controller 6000 includes an upper opening/closing valve 4240 and a lower opening/closing valve 4340 to supply and exhaust the heated processing fluid to and from the processing space 3502 before the substrate W is introduced into the processing space 3502. ) and the opening/closing valve 5110 of the exhaust unit 5000 can be controlled. The controller 6000 may control the upper opening/closing valve 4240 and the lower opening/closing valve 4340 to open and close simultaneously before the processing of the substrate W proceeds. In this case, the processing fluid may be simultaneously supplied to the upper supply line 4200 and the lower supply line 4300 before the substrate W is put into the processing space. The controller 6000 may control the substrate W to be introduced into the processing space 3502 when the processing fluid is heated to a set temperature or higher by the first and second heaters 4210 and 4310 . In this case, the set temperature may be a temperature lower than the critical temperature, which is a temperature at which the processing fluid starts to change into a supercritical state.

Hereinafter, a substrate processing method according to the present invention will be described in detail with reference to the drawings.

13 is a flowchart of a substrate processing method according to an embodiment of the present invention.

Referring to FIG. 13, the substrate processing method according to the present invention includes a substrate sealing step (S100), a pre-supply step (S200), a chamber opening step (S300), a substrate inputting step (S400), a process progress step (S500), a substrate A discharging step (S500) may be included.

In the substrate sealing step (S100), when the input signal of the substrate W is transmitted, the substrate space is sealed before the substrate is input. In the pre-supplying step ( S200 ), the processing fluid may be supplied and discharged into the processing space while the processing space is closed. In this case, the processing fluid may be heated up to a set temperature in advance through the pre-supply of the processing fluid. In addition, in the pre-supply step (S200), the processing fluid includes a first supply path supplied from the top of the processing space and a second supply path supplied from the bottom of the processing space, and the processing fluid includes the first supply path and the second supply path. It can be controlled so that it is simultaneously supplied to the supply path. In the chamber opening step ( S300 ), when the temperature of the processing fluid sensed by the temperature sensor reaches a set temperature, the controller may open the chamber 3500 . In the substrate loading step ( S400 ), the substrate may be loaded into the processing space. In the process progress step ( S500 ), the substrate may be processed by supplying a processing fluid whose temperature is higher than a set temperature to the processing space. In the step of discharging the substrate ( S500 ), when processing of the substrate is completed, the processing space may be opened and the substrate may be taken out.

The substrate processing method according to the present invention may perform a substrate processing process on a plurality of substrates. At this time, for each of the plurality of substrates, the substrate sealing step (S100), the pre-supply step (S200), the chamber opening step (S300), the substrate input step (S400), the process progress step (S500), and the substrate discharge step (S500) are performed. can be performed That is, the pre-supplying step may be performed for each of a plurality of substrates to be processed.

15 is a graph illustrating the temperature of a processing fluid and input and output timing of a substrate according to an embodiment of the present invention. 'S' in FIG. 15 means the time of inputting the substrate, 'F' means the time of discharging the substrate, and P1 means that the substrate treatment process is performed for one substrate. That is, in FIG. 15 , it can be confirmed that the processing process is performed for a total of three substrates.

Referring to FIG. 15 , in the substrate processing method according to the present invention, a substrate may be input in a state in which a processing fluid is heated to a set temperature or higher, and substrate processing may be performed.

In a conventional supercritical processing apparatus, a heater is provided on a supply line to increase the temperature of the supercritical fluid. However, due to the high-pressure characteristics of the supercritical chamber, when the substrate processing process proceeds in a state in which the temperature of the fluid is not sufficiently raised by circulating the supercritical fluid, process defects are caused. Furthermore, since it is not a circulating structure, when the supercritical fluid is stagnant, a phenomenon in which the temperature of the fluid is lowered occurs, causing process defects. In addition, when inputting intervals between the plurality of substrates are different, uniform processing is difficult because the temperature of the processing fluid is different for each substrate to be inputted.

However, according to the present invention, before the substrate processing process proceeds, the supercritical fluid is exhausted through the processing space inside the chamber 3500, so that the temperature of the fluid flowing through the supply line and the temperature inside the chamber are sufficiently raised. It is possible to solve the above-described problem by introducing the substrate and proceeding with the treatment process. In addition, even if a separate drain line is not installed for free circulation of the supercritical fluid, the temperature of the fluid can be sufficiently raised by pre-supplying the supercritical fluid using the supply line connected to the chamber, so the device can be simplified. there is

According to the present invention, it is possible to provide an apparatus capable of efficiently performing the development process. In addition, the present invention can provide a device capable of preventing a leaning phenomenon in which patterns collapse or are bent. In addition, the present invention can provide a platform of a substrate processing apparatus capable of efficiently performing a developing process and a supercritical process. In addition, the present invention can provide a platform of a substrate processing apparatus capable of cleaning the non-patterned surface of a substrate. In addition, reverse contamination due to contaminants on the non-patterned surface of the substrate can be prevented.

The above detailed description has been described in detail based on the substrate processing apparatus according to an embodiment of the present invention. However, the present invention is not limited to the above examples and is applicable to all apparatuses for processing substrates.

Claims (20)

a chamber having a processing space therein;
a supply line provided with a first on/off valve and supplying a treatment fluid to the treatment space;
a heater installed on the supply line to heat the processing fluid;
an exhaust line having a second on-off valve and exhausting the processing space; and
A controller for controlling the first on-off valve and the second on-off valve;
The controller,
Control to supply and exhaust the heated processing fluid to and from the processing space before a substrate is introduced into the processing space;
and controlling the first on/off valve and the second on/off valve to remove the organic solvent on the substrate with the processing fluid in a supercritical state in the processing space when the substrate is input into the processing space. delete According to claim 1,
The supply line includes an upper supply line connected to an upper wall of the chamber and a lower supply line connected to a lower wall of the chamber;
The heater includes a first heater installed on the upper supply line and a second heater installed on the lower supply line. According to claim 3,
The processing fluid is simultaneously supplied to the upper supply line and the lower supply line before the substrate is introduced into the processing space. According to claim 1,
A substrate processing apparatus including a filter installed on the supply line and installed downstream of the heater. According to claim 1,
The controller controls the substrate to be introduced into the processing space when the processing fluid is heated to a predetermined temperature or higher by the heater. According to claim 6,
The set temperature is lower than a critical temperature, which is a temperature at which the processing fluid starts to change to a supercritical state. According to claim 1,
The processing fluid is a fluid in a supercritical state. According to claim 3,
The first on-off valve,
An upper opening and closing valve installed on the upper supply line;
Including a lower opening and closing valve installed on the lower supply line,
The controller,
A substrate processing apparatus for controlling the upper opening/closing valve and the lower opening/closing valve to open and close simultaneously before the substrate processing process proceeds. According to claim 8,
The substrate processing apparatus of claim 1 , wherein the supercritical fluid dries the developer remaining on the substrate. In the device for processing the substrate,
an index module including a container in which the substrate is accommodated;
A processing module for performing a process on the substrate;
The processing module,
a buffer unit for temporarily storing the substrate;
a wet treatment chamber supplying a developing solution to develop the substrate;
a supercritical processing chamber having a processing space therein and processing the substrate by supplying a processing fluid in a supercritical state;
A heat treatment chamber for performing a heat treatment process on the substrate;
a transfer chamber including a transfer unit for transferring the substrate between the wet processing chamber, the supercritical processing chamber, and the heat treatment chamber;
The supercritical processing chamber,
a supply unit including a supply line supplying the treatment fluid to an internal treatment space;
a heater installed on the supply line to heat the processing fluid;
an exhaust unit including an exhaust line for exhausting the processing space; and
A controller for controlling the supply unit and the exhaust unit;
The controller,
Control to supply and exhaust the heated processing fluid to and from the processing space before the substrate is introduced into the processing space;
and controlling the supply unit and the exhaust unit to remove the organic solvent on the substrate with the processing fluid in a supercritical state when the substrate is input into the processing space. According to claim 11,
The supply line includes an upper supply line connected to an upper wall of the chamber and a lower supply line connected to a lower wall of the chamber;
The heater includes a first heater installed on the upper supply line and a second heater installed on the lower supply line. According to claim 12,
The controller,
A substrate processing apparatus controlling the processing fluid to be simultaneously supplied to the upper supply line and the lower supply line. According to claim 11,
A substrate processing apparatus including a filter installed on the supply line and installed downstream of the heater. According to claim 11,
The processing fluid is a fluid in a supercritical state. In the method of treating the substrate,
a sealing step of closing the processing space;
a pre-supplying step of heating and supplying and discharging a processing fluid into the processing space before a substrate is introduced into the processing space;
a carrying step of opening the processing space and carrying the substrate into the processing space;
a substrate processing step of closing the processing space and supplying the processing fluid into the processing space in a supercritical state to remove organic solvent remaining on the substrate;
and a transporting step of opening the processing space and transporting the substrate. delete delete According to claim 16,
The processing fluid includes a first supply path supplied from an upper portion of the processing space and a second supply path supplied from a lower portion of the processing space;
The processing fluid is simultaneously supplied to the first supply path and the second supply path. According to claim 16,
The method performs a substrate treatment process on a plurality of substrates,
The pre-supplying step is performed for each of the plurality of substrates.

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