JP7445698B2 - Substrate processing equipment and method - Google Patents

Description

The present invention relates to a substrate processing apparatus and method.

In order to manufacture semiconductor devices, various processes such as vapor deposition, photography, etching, cleaning, etc. are performed. Among these, the photographic process includes a coating process, an exposure process, and a development process. The coating process is a process of applying a photosensitive liquid such as photoresist onto the substrate. The exposure process is a process of exposing the coated photoresist film to light from a light source through a photomask to expose a circuit pattern on the substrate. The developing step is a step of selectively developing the exposed area of the substrate.

The development process generally includes a developer supply stage, a rinse solution supply stage, and a drying stage. In the drying step, a spin chuck supporting the substrate is rotated, and spin drying is performed in which the developer or rinse solution remaining on the substrate is dried using centrifugal force applied by the spin chuck to the substrate.

However, as the critical dimension (CD) between patterns formed on a substrate becomes finer, a leaning phenomenon occurs in which the patterns collapse or bend when performing the above-described spin drying. be done. These problems are pointed out as limitations of existing photographic processing equipment.

International Patent Publication No. WO2017014416A1

An object of the present invention is to provide an apparatus that can efficiently perform development processing.
Another object of the present invention is to provide an apparatus that can prevent a leaning phenomenon in which a pattern collapses or bends.

Another object of the present invention is to provide a platform for a substrate processing apparatus that can efficiently perform a developing process and a supercritical process.

Another object of the present invention is to provide a platform for a substrate processing apparatus that is capable of cleaning a non-patterned surface of a substrate.

Another object of the present invention is to provide a substrate processing apparatus that can compensate for the temperature of supercritical fluid supplied in a supercritical processing process.

The problems to be solved by the present invention are not limited here, and other problems not mentioned should be clearly understood by those skilled in the art from the description below.

The present invention provides an apparatus for processing a substrate. According to an embodiment of the present invention, a chamber having a processing space therein, a first opening/closing valve, a supply line for supplying a processing fluid to the processing space, and a supply line installed on the supply line for the processing a heater that heats a fluid; an exhaust line in which a second on-off valve is installed and exhausts the processing space; and a controller that controls the first on-off valve and the second on-off valve; Before performing a processing step on a substrate in the processing space, the first on-off valve and the second on-off valve may be controlled to supply and exhaust the heated processing fluid to the processing space. .

According to one embodiment, the controller controls the first opening/closing valve and the second opening/closing valve to supply and exhaust the heated processing fluid to and from the processing space before the substrate is introduced into the processing space. Open/close valves can be controlled.

According to one embodiment, the supply line includes an upper supply line connected to an upper wall of the chamber and a lower supply line connected to a lower wall of the chamber, and the heater is connected to the upper supply line. The heating device may include a first heater installed on the lower supply line, and a second heater installed on the lower supply line.

According to one embodiment, the processing fluid may be simultaneously supplied to the upper supply line and the lower supply line before the substrate is introduced into the processing space.

According to one embodiment, a filter may be included on the supply line and downstream of the heater.

According to one embodiment, the controller may control the substrate to be introduced into the processing space when the processing fluid is heated to a preset temperature or higher by the heater.

According to one embodiment, the set temperature may be lower than a critical temperature, which is the temperature at which the processing fluid begins to change to a supercritical state.

According to one embodiment, the processing fluid may be a fluid in a supercritical state.

According to one embodiment, the first on-off valve includes an upper on-off valve installed on the upper supply line and a lower on-off valve installed on the lower supply line, and the controller includes: Before the substrate processing process is performed, the upper opening/closing valve and the lower opening/closing valve may be controlled to open and close at the same time.

According to one embodiment, the supercritical fluid can dry developer remaining on the substrate.

The present invention provides an apparatus for processing a substrate. According to one embodiment, the processing module includes an index module including a container in which the substrate is stored, and a processing module that performs a process on the substrate, and the processing module includes a buffer unit that temporarily stores the substrate. a wet processing chamber that supplies a developer to develop the substrate; a supercritical processing chamber that supplies a supercritical fluid to process the substrate; and a heat treatment chamber that performs a heat treatment process on the substrate. a transfer chamber including a transfer unit that transfers the substrate between the wet processing chamber, the supercritical processing chamber, and the heat treatment chamber, and the supercritical processing chamber supplies the supercritical fluid to an internal processing space. A supply line, a heater installed on the supply line to heat the processing fluid, an exhaust line to exhaust the processing space, and a controller to control the supply unit and the exhaust unit, The controller may control supply and exhaust of the heated processing fluid to the processing space before performing a processing process on the substrate in the processing space.

According to one embodiment, the supply line includes an upper supply line connected to an upper wall of the chamber, and a lower supply line connected to a lower wall of the chamber, and the heater is connected to the upper supply line. The heating device may include a first heater installed on the lower supply line, and a second heater installed on the lower supply line.

According to one embodiment, the controller may control the processing fluid to be supplied to the upper supply line and the lower supply line simultaneously.

According to one embodiment, a filter may be included on the supply line and downstream of the heater.

According to one embodiment, the processing fluid may be a fluid in a supercritical state.

The present invention provides a method of processing a substrate. According to one embodiment, a sealing step of closing a processing space, a pre-supply step of supplying and discharging a processing fluid to the processing space, and a substrate processing step of supplying the processing fluid to the processing space to process the substrate. , an unloading step of opening the processing space and unloading the substrate.

According to one embodiment, a loading step of loading the substrate into the processing space may be included between the pre-supplying step and the substrate processing step.

According to one embodiment, the loading step may be performed after the processing fluid is heated to a preset temperature or higher in the pre-supplying step.

According to one embodiment, the processing fluid includes a first supply path supplied at an upper part of the processing space and a second supply route supplied at a lower part of the processing space, and the processing fluid is supplied at the lower part of the processing space. The first supply route and the second supply route may be supplied at the same time.

According to one embodiment, the method may include performing a substrate processing step on a plurality of substrates, and the pre-supplying step may be performed on each of the plurality of substrates.

The present invention can provide an apparatus that can efficiently perform development processing.

Further, the present invention can provide an apparatus that can prevent a leaning phenomenon in which a pattern collapses or bends.

Further, the present invention can provide a platform for a substrate processing apparatus that can efficiently perform a developing process and a supercritical process.

Further, the present invention can provide a platform for a substrate processing apparatus that can clean a non-patterned surface of a substrate.

Further, it is possible to prevent back contamination caused by contaminants on the non-patterned surface of the substrate.

Furthermore, it is possible to provide a substrate processing apparatus that can compensate for the temperature of supercritical fluid supplied in a supercritical processing step.

1 is a diagram illustrating a substrate processing apparatus that performs a coating process according to an embodiment of the present invention. 1 is a diagram illustrating a substrate processing apparatus that performs an exposure process according to an embodiment of the present invention. 1 is a diagram illustrating a substrate processing apparatus in which a developing process is performed according to an embodiment of the present invention. FIG. 4 is a cross-sectional view of the substrate processing apparatus of FIG. 3 viewed from one direction. FIG. 4 is a cross-sectional view of the substrate processing apparatus of FIG. 3 when viewed in the opposite direction from one direction. 4 is a plan view of the substrate processing apparatus of FIG. 3. FIG. 7 is a drawing showing an example of a hand of the transfer robot shown in FIG. 6. FIG. 1 is a plan cross-sectional view schematically showing an example of a heat treatment chamber of a substrate processing apparatus according to an embodiment of the present invention. 9 is a front cross-sectional view of the heat treatment chamber of FIG. 8. FIG. 1 is a diagram schematically illustrating a backside cleaning chamber of a substrate processing apparatus according to an embodiment of the present invention. 1 is a diagram schematically illustrating a supercritical chamber of a substrate processing apparatus according to an embodiment of the present invention. 1 is a diagram schematically illustrating a wet processing chamber of a substrate processing apparatus according to an embodiment of the present invention. 1 is a flow chart of a substrate processing method according to an embodiment of the present invention. 1 is a diagram illustrating a supercritical chamber according to an embodiment of the present invention. 5 is a graph illustrating the temperature of a processing fluid and the timing of substrate loading and unloading according to an embodiment of the present invention.

Since the invention is susceptible to various modifications and may have various embodiments, specific embodiments are illustrated in the drawings and will be explained in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, but should be understood to include all conversions, equivalents, and alternatives that fall within the spirit and technical scope of the present invention. . In describing the present invention, if it is determined that detailed description of related known techniques may obscure the gist of the present invention, the detailed description will be omitted.

The terminology used in this application is merely used to describe particular embodiments and is not intended to limit the invention. A singular expression includes a plural expression unless the context clearly dictates otherwise. In this application, the words "comprising" or "having" are used to specify the presence of a feature, number, step, act, component, part, or combination thereof that is described in the specification. It should be understood that the present invention does not exclude in advance the existence or possibility of addition of one or more other features, figures, steps, acts, components, parts or combinations thereof.

Although the terms first, second, etc. may be used to describe various components, the components should not be limited by the terms. These terms are only used to distinguish one component from another.

A controller (not shown) can control the overall operation of the substrate processing apparatus. The controller (not shown) may include a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory). The CPU executes desired processing such as liquid processing and drying processing, which will be described later, according to various recipes stored in these storage areas. The recipe has input thereto such as device control information regarding process conditions, such as process time, process pressure, process temperature, and various gas flow rates. On the other hand, these programs and recipes indicating processing conditions may be stored in a hard disk or semiconductor memory. Further, the recipe may be stored in a portable computer-readable storage medium such as a CD-ROM or DVD and set at a predetermined position in the storage area.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and in the description with reference to the accompanying drawings, the same or corresponding components will be referred to without reference to drawing symbols. The same reference numerals will be given, and duplicate explanations thereof will be omitted.

FIG. 1 is a diagram illustrating a substrate processing apparatus that performs a coating process according to an embodiment of the present invention, and FIG. 2 is a diagram illustrating a substrate processing apparatus that performs an exposure process according to an embodiment of the present invention. FIG. 3 is a diagram illustrating a substrate processing apparatus in which a developing process is performed according to an embodiment of the present invention.

Referring to FIGS. 1 to 3, in the present invention, a coating process, an exposure process, and a development process can be performed using different apparatuses. Specifically, a liquid film may be formed by coating a photoresist on a substrate W using a substrate processing apparatus that performs the coating process shown in FIG. In the substrate processing apparatus that performs the coating process, a baking process may be performed to bake the substrate before and after forming a liquid film on the substrate W. The baking process may be a process of heating the substrate W to a process temperature or higher in a sealed space. A baking process performed after forming a film on the substrate W heats and evaporates the photoresist film coated on the substrate to adjust the film thickness to a predetermined thickness. After the coating process, the substrate W can be transported to a substrate processing apparatus where the exposure process of FIG. 2 is performed. The exposure process may be a process of exposing a circuit pattern on the substrate W on which a photoresist film is formed. The exposure process may be performed by irradiating the substrate W with an exposure beam. The exposure process may include a process of exposing the center of the substrate W and an edge exposure process of exposing the edge of the substrate W. After the exposure process is performed, the substrate W may be transported to a substrate processing apparatus where the development process shown in FIG. 3 is performed. The developing process may be a process of selectively developing the exposed area of the substrate W. Hereinafter, a substrate processing apparatus that performs a developing process will be described in more detail with reference to the drawings.

4 is a sectional view of the substrate processing apparatus of FIG. 3 viewed from one direction, FIG. 5 is a sectional view of the substrate processing apparatus of FIG. 3 viewed from the opposite direction, and FIG. 6 is a sectional view of the substrate processing apparatus of FIG. FIG. 3 is a plan view of the processing device.

Referring to FIGS. 3 to 6, the substrate processing apparatus 1 may include an index module 20 and a treating module 30. According to one embodiment, the index module 20 and the processing module 30 can be arranged in a line sequentially. Hereinafter, the direction in which the index module 20 and the processing module 30 are arranged is referred to as the X-axis direction 12, the direction perpendicular to the X-axis direction 12 when viewed from above is referred to as the Y-axis direction 14, and the X-axis direction 12 and the Y-axis direction The direction that is perpendicular to all directions 14 is defined as the Z-axis direction 16.

The index module 20 can transport the substrates W from the container 10 containing the substrates W to the processing module 30, and can store the processed substrates W into the container 10. The length direction of the index module 20 may be provided in the Y-axis direction 14. Index module 20 may include a load port 22 and an index frame 24. The load port 22 is located on the opposite side of the processing module 30 with respect to the index frame 24 . The container 10 containing the substrate W can be placed at the load port 22. A plurality of load ports 22 may be provided, and the plurality of load ports 22 may be arranged along the Y-axis direction 14.

As the container 10, a closed container 10 such as a front open unified pod (FOUP) can be used. Containers 10 can be placed in load port 22 by a transport means (not shown), such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle, or by an operator.

An index robot 2200 may be provided inside the index frame 24 . A guide rail 2300 whose length direction extends in the Y-axis direction 14 is provided within the index frame 24, and the index robot 2200 may be provided movably on the guide rail 2300. The indexing robot 2200 includes a hand 2220 on which the substrate W is placed, and the hand 2220 can be provided to be able to move forward and backward, rotate about the Z-axis direction 16, and move along the Z-axis direction 16.

According to one embodiment of the present invention, the processing module 30 may perform processing steps on the substrate W. For example, the processing module 30 can perform a wet processing process, a heat treatment process, a backside cleaning process, and a supercritical process on the substrate W.

Processing module 30 includes a processing block 30a. The processing block 30a may perform a processing process on the substrate W. A plurality of processing blocks 30a may be provided, and these may be provided so as to be stacked on top of each other. According to the embodiment of FIG. 3, two processing blocks 30a may be provided. According to one example, the two processing blocks 30a can perform the same process and have the same structure.

The processing block 30a may include a transfer chamber 3100, a wet processing chamber 3200, a backside cleaning chamber 3300, a heat processing chamber 3400, a supercritical chamber 3500, and a buffer chamber 3600.

The transfer chamber 3100 can transfer the substrate W between a wet processing chamber 3200, a backside cleaning chamber 3300, a heat treatment chamber 3400, and a supercritical chamber 3500 within the processing block 30a. The length of the transport chamber 3100 may be parallel to the X-axis direction 12. A transport unit 3120 may be provided in the transport chamber 3100. The transport unit 3120 can transport the substrate W between the wet processing chamber 3200, the backside cleaning chamber 3300, the heat processing chamber 3400, and the supercritical chamber 3500. According to one example, the transport unit 3120 has a hand A on which the substrate W is placed, and the hand A is provided to be able to move forward and backward, rotate about the Z-axis direction 16, and move along the Z-axis direction 16. can be done. A guide rail 3140 whose length direction is parallel to the X-axis direction 12 is provided in the transport chamber 3100, and the transport unit 3120 may be movably provided on the guide rail 3140.

FIG. 7 is a drawing showing an example of the hand of the transfer robot shown in FIG. Referring to FIG. 7, hand A may include a base 3128 and a support protrusion 3129. The base 3128 can have an annular ring shape with a portion of its circumference cut off. The base 3128 can have an inner diameter larger than the diameter of the substrate W. The support protrusion 3129 can extend inwardly from the base 3128. A plurality of support protrusions 3129 are provided to support the edge region of the substrate W. According to one embodiment, four support protrusions 3129 may be provided at equal intervals.

Referring again to FIGS. 3 to 6, the heat treatment chamber 3400 may perform a heat treatment process on the substrate W. The heat treatment chamber 3400 may be disposed on one side of the transfer chamber 3100. The heat treatment chamber 3400 may include a plurality of heat treatment chambers 3400. The heat treatment chamber 3400 and the backside cleaning chamber 3300 may be vertically stacked. The heat treatment chamber 3400 may be arranged to face the wet treatment chamber 3200 with the transfer chamber 3100 interposed therebetween. The heat treatment chamber 3400 may be placed between the index module 20 and the supercritical chamber 3500. The number of heat treatment chambers 3400 may be less than the number of supercritical chambers 3500. The number of backside cleaning chambers 3300 may be less than the number of wet processing chambers 3200. The number of heat treatment chambers 3400 may correspond to the number of backside cleaning chambers 3300. However, the present invention is not limited thereto, and may be changed in consideration of the footprint of the device, process efficiency, etc.

FIG. 8 is a plan cross-sectional view schematically showing an example of a heat treatment chamber of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 9 is a front cross-sectional view of the heat treatment chamber of FIG. 8. Referring to FIGS. 8 and 9, the heat treatment chamber 3400 may include a housing 3410, a cooling unit 3420, a heating unit 3430, and a transport plate 3440. The heat treatment chamber 3400 may perform a heat treatment process on the substrate W. The heat treatment process can include a cooling process and a heating process.

The housing 3410 may be provided in a generally rectangular shape. A loading port (not shown) through which the substrate W is loaded and unloaded may be formed in a side wall of the housing 3410. The loading port can be kept open. Optionally, a door (not shown) may be provided to open and close the entry port. A cooling unit 3420, a heating unit 3430, and a transport plate 3440 may be provided within the housing 3410. The cooling unit 3420 and the heating unit 3430 may be provided side by side along the Y-axis direction 14. According to one example, the cooling unit 3420 may be located closer to the transfer chamber 3100 than the heating unit 3430.

Cooling unit 3420 can include a cooling plate 3422. The cooling plate 3422 may have a generally circular shape when viewed from above. A cooling member 3424 may be provided on the cooling plate 3422. According to one example, the cooling member 3424 may be formed inside the cooling plate 3422 and may be provided as a channel through which cooling fluid flows.

The heating unit 3430 may include a heating plate 3432, a cover 3434, and a heater 3433. The heating plate 3432 can include a generally circular shape when viewed from above. The heating plate 3432 can include a larger diameter than the substrate W. A heater 3433 may be installed on the heating plate 3432. The heater 3433 may be a heating resistor to which a current is applied. The heating plate 3432 may be provided with a lift pin 3438 that can be driven up and down along the Z-axis direction 16. The lift pins 3438 take up the substrate W from a transport means external to the heating unit 3430 and place it on the heating plate 3432, or lift the substrate W from the heating plate 3432 and deliver it to the transport means external to the heating unit 3430. According to one embodiment, three lift pins 3438 may be provided. The cover 3434 may include an open space at the bottom. The cover 3434 is positioned above the heating plate 3432 and can be moved up and down by a driver 3436. When the cover 3434 is brought into contact with the heating plate 3432, a space surrounded by the cover 3434 and the heating plate 3432 is provided as a heating space for heating the substrate W.

The transport plate 3440 has a generally disk shape and can include a diameter corresponding to the substrate W. A notch 3444 may be formed at the edge of the transport plate 3440. The notch 3444 may have a shape corresponding to the protrusion 3129 formed on the hand A of the transfer robot 3120 described above. Further, the number of notches 3444 corresponds to the number of protrusions 3129 formed on the hand A, and the notches 3444 are formed at positions corresponding to the protrusions 3129. If the vertical positions of hand A and transport plate 3440 are changed at a position where hand A and transport plate 3440 are aligned in the vertical direction, the substrate W is transferred between hand A and transport plate 3440. The transport plate 3440 is mounted on a guide rail 3449 and can be moved along the guide rail 3449 by a driver 3446. The transport plate 3440 may be provided with a plurality of slit-shaped guide grooves 3442. The guide groove 3442 extends from the end of the transport plate 3440 to the inside of the transport plate 3440. The length direction of the guide grooves 3442 is provided along the Y-axis direction 14, and the guide grooves 3442 are spaced apart from each other along the X-axis direction 12. The guide groove 3442 can prevent the transport plate 3440 and the lift pins from interfering with each other when the substrate W is transferred between the transport plate 3440 and the heating unit 3430.

The substrate W is heated while the substrate W is placed directly on the support plate 13430, and the substrate W is cooled while the transport plate 3440 on which the substrate W is placed is in contact with the cooling plate 3222. The transport plate 3440 is made of a material with a high heat transfer coefficient so that heat transfer between the cooling plate 3422 and the substrate W is good. According to an example, the transport plate 3440 may be made of metal.

Referring again to FIGS. 3 to 6, the backside cleaning chamber 3300 can clean the non-patterned side of the substrate W. The backside cleaning chamber 3300 may be disposed on one side of the transfer chamber 3100. The backside cleaning chamber 3300 may include a plurality of backside cleaning chambers 3300. The back cleaning chamber 3300 and the heat treatment chamber 3400 may be vertically stacked. The backside cleaning chamber 3300 may be arranged to face the wet processing chamber 3200 with the transfer chamber 3100 interposed therebetween. The backside cleaning chamber 3300 may be placed between the index module 20 and the supercritical chamber 3500. The number of backside cleaning chambers 3300 may be less than the number of supercritical chambers 3500. The number of backside cleaning chambers 3300 may be less than the number of wet processing chambers 3200. The number of backside cleaning chambers 3300 may correspond to the number of heat treatment chambers 3400. However, the present invention is not limited thereto, and may be changed in consideration of the footprint of the device, process efficiency, etc.

FIG. 10 is a diagram schematically showing a backside cleaning chamber of a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 10, the backside cleaning chamber 3300 may include a housing 3310, a processing container 3320, a substrate support unit 3330, an inversion unit 3340, and a cleaning unit 3350.

The housing 3310 may provide a processing space in which the non-patterned surface of the substrate W is cleaned. Processing container 3320 can be placed inside housing 3310. The processing container 3320 has a cylindrical shape with an open top, and can provide a processing space for processing the substrate W. The open upper surface of the processing container 3320 may be provided as a passage for carrying in and out of the substrate W. A substrate support unit 3330 may be located inside the processing container 3320. The substrate support unit 3330 can support the substrate W and rotate the substrate during a process.

The substrate support unit 3330 may be installed inside the processing container 3320. The substrate support unit 3330 can support the substrate W during the process. The substrate support unit 3330 may be rotated by a driving unit 3332, which will be described later, during the process. The substrate support unit 3330 may include a spin head 3334, a support shaft 3336, and a driving unit 3332.

Spin head 3334 can include a circular top surface. A support shaft 3336 that supports the spin head 3334 may be connected to the lower part of the spin head 3334 . The support shaft 3336 can be rotated by a driving part 3332 connected to its lower end. The drive unit 3332 is provided with a motor or the like. By rotating the support shaft 3336, the spin head 3334 and the substrate W can be rotated.

The reversing unit 3340 may be located above the processing container 3320. The inversion unit 3340 may invert the substrate W so that the non-patterned surface of the substrate faces upward, and load the substrate W onto the spin head 3334. The reversing unit 3340 may include a holding part 3342 into which a substrate W to be processed is loaded, a reversing part 3344 for reversing the holding part 3342, and an elevating part 3346 for raising and lowering the reversing part 3344. At this time, the reversing part 3344 is for reversing the holding part 3342 by 180 degrees, and a driving device 3348 such as a motor may be used. The lifting part 3346 is for raising and lowering the reversing part 3344 in the vertical direction (direction aligned with the axial direction of the support shaft 3336), and is a linear drive device such as a cylinder, a linear motor, or a lead screw using a motor. can be used.

The holding part 3342 of the reversing unit 3340 can simultaneously perform a buffer function in which not only the substrate W to be reversed but also the substrate W to be temporarily placed on standby is placed.

The cleaning unit 3350 may supply cleaning fluid to the substrate W whose non-patterned surface is exposed by the reversing unit 3340. The cleaning unit 3350 can discharge cleaning fluid toward the non-patterned surface of the substrate W. As another example, the cleaning unit 3350 may physically clean the non-patterned surface of the substrate W using a brush or the like. The cleaning unit 3350 includes a nozzle 3352 that discharges cleaning fluid, a nozzle arm 3354 that supports the nozzle 3352, a support shaft 3356 that supports the nozzle arm 3354 and moves the nozzle arm 3354, and a drive unit 3258 that applies a driving force to the support shaft 3356. can include.

Referring again to FIGS. 3 to 6, the supercritical chamber 3500 processes the substrate W by supplying supercritical fluid to the substrate W. For example, the supercritical chamber 3500 can dry the substrate W by supplying a supercritical fluid to the substrate W. The supercritical chamber 3500 may perform a drying process on the substrate W processed in the wet processing chamber 3200. In one embodiment, the supercritical chamber 3500 may perform a drying process on the substrate W that has been developed in the wet processing chamber 3200. At this time, the developer remaining on the substrate W can be dried in the supercritical chamber 3500. In one embodiment, the supercritical chamber 3500 may perform a drying process on the substrate W that has been cleaned in the wet processing chamber 3200. At this time, the organic solvent remaining on the substrate W can be dried in the supercritical chamber 3500.

The supercritical chamber 3500 may be placed on both sides of the transfer chamber 3100. Supercritical chamber 3500 can include multiple supercritical chambers 3500. A plurality of supercritical chambers 3500 may be stacked vertically. The supercritical chamber 3500 may be disposed outside the wet processing chamber 3200, the backside cleaning chamber 3300, and the heat processing chamber 3400 in the second direction 14. The supercritical chambers 3500 disposed on one side and the other side of the transfer chamber 3100 may be arranged to face each other with the transfer chamber 3100 as a reference when viewed from above. However, the present invention is not limited thereto, and may be changed in consideration of the footprint of the device, process efficiency, etc.

FIG. 11 is a diagram schematically showing a supercritical chamber of a substrate processing apparatus according to an embodiment of the present invention.

The supercritical device 3500 removes the liquid on the substrate W using supercritical fluid. The supercritical chamber 3500 includes a body 3520, a support 3540, a fluid supply unit 3560, and a blocking plate 3580. The body 3520 provides an interior space 3502 in which a drying process is performed. The body 3520 has an upper body 3522 and a lower body 3524, and the upper body 3522 and the lower body 3524 are combined with each other to provide the interior space 3502 described above. An upper body 3522 is provided on top of the lower body 3524. The upper body 3522 is fixed in position, and the lower body 3524 can be raised and lowered by a driving member 3590 such as a cylinder. When the lower body 3524 is separated from the upper body 3522, the internal space 3502 is opened, and at this time, the substrate W is loaded or unloaded. During the drying process, the lower body 3524 is brought into close contact with the upper body 3522, and the processing space 3502 is sealed from the outside. Drying chamber 3500 has heater 3570. According to one example, heater 3570 is located within a wall of body 3520. The heater 3570 heats the processing space 3502 of the body 3520 so that the fluid supplied into the interior space of the body 3520 maintains a supercritical state. The support 3540 supports the substrate W within the internal space 3502 of the body 3520. The support body 3540 has a fixed load 3542 and a mounting table 3544. The fixed load 3542 is fixedly installed on the upper body 3522 so as to protrude downward from the bottom surface of the upper body 3522. The fixed load 3542 is provided with its length extending in the vertical direction. A plurality of fixed loads 3542 are provided and are spaced apart from each other. The fixed load 3542 is arranged so that the substrate W does not interfere with the fixed load 3542 when the substrate W is carried in or out of the space surrounded by the fixed load 3542. A mounting table 3544 is coupled to each fixed load 3542. The mounting table 3544 extends from the lower end of the fixed load 3542 toward the space surrounded by the fixed load 3542. With the above-described structure, the edge area of the substrate W carried into the internal space 3502 of the body 3520 is placed on the mounting table 3544, the entire area of the upper surface of the substrate W, the central area of the bottom surface of the substrate W, and the edge area of the substrate W is placed on the mounting table 3544. A portion of the edge area within the bottom surface of W is exposed to the drying fluid supplied to the interior space 3502. The fluid supply unit 3560 supplies drying fluid to the interior space 3502 of the body 3520. According to one example, the drying fluid can be supplied to the interior space 3502 in a supercritical state. Alternatively, the processing fluid can be supplied to the interior space 3502 in a gaseous state and undergo a phase change within the interior space 3502 to a supercritical state. According to one example, fluid supply unit 3560 has a main supply line 3562, an upper branch line 3564, and a lower branch line 3566. An upper branch line 3564 and a lower branch line 3566 branch off from the main supply line 3562. The upper branch line 3564 is coupled to the upper body 3522 to supply drying fluid above the substrate W placed on the support 3540. According to one example, upper branch line 3624 is coupled to the center of upper body 3522. A lower branch line 3566 is coupled to the lower body 3524 to supply a drying fluid under the substrate W placed on the support 3540. According to one example, lower branch line 3566 is coupled to the center of lower body 3524. An exhaust line 3550 is coupled to the lower body 3524. The supercritical fluid within the interior space 3502 of the body 3520 is exhausted to the outside of the body 3520 through an exhaust line 3550. A blocking plate 3580 may be disposed within the internal space 3502 of the body 3520. The blocking plate 3580 may be provided in a disc shape. The blocking plate 3580 is supported by a support base 3582 so as to be spaced apart from the bottom of the body 3520 to the top. The support stands 3582 are provided in a load shape, and a plurality of support stands 3582 are arranged so as to be spaced apart from each other by a certain distance. When viewed from above, the blocking plate 3580 may be provided to overlap the outlet of the lower branch line 3566 and the inlet of the exhaust unit 3550. The blocking plate 3580 may prevent the drying fluid supplied through the lower branch line 3566 from being directly discharged toward the substrate W and damaging the substrate W.

Referring again to FIGS. 3 to 6, the wet processing chamber 3200 may perform a liquid processing process on the substrate W by supplying a processing liquid. The wet processing chamber 3200 may perform a developing process on the substrate W. At this time, the processing liquid discharged from the wet processing chamber 3200 may be a developer. The wet processing chamber 3200 can discharge a developer onto the patterned surface of the substrate W.

The wet processing chamber 3200 may be placed on one side of the transfer chamber 3100. Wet processing chamber 3200 can include multiple wet processing chambers 3200. A plurality of wet processing chambers 3200 may be stacked on top of each other. The wet processing chamber 3200 may be arranged to face the backside cleaning chamber 3300 or the heat processing chamber 3400 with the transfer chamber 3100 interposed therebetween. Wet processing chamber 3200 may be placed between index module 20 and supercritical chamber 3500. The number of wet processing chambers 3200 may correspond to the number of supercritical chambers 3500. A greater number of wet processing chambers 3200 than backside cleaning chambers 3300 may be provided. A greater number of wet processing chambers 3200 than heat processing chambers 3400 may be provided. However, the present invention is not limited thereto, and may be changed in consideration of the footprint of the device, process efficiency, etc.

FIG. 12 is a diagram schematically illustrating a wet processing chamber of a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 12, the wet processing chamber 3200 may apply a developer to the substrate W to perform development processing on the substrate W. It can include a housing (not shown), a support unit 3210, a processing liquid supply member 3220, and a collection member 3230. The housing of the wet processing chamber 3200 may provide a processing space in which the substrate W is processed.

The support unit 3210 can support the substrate W. The support member 3100 can rotate the supported substrate S. The support unit 3210 may include a support plate 3211, a support pin 3212, a choke pin 3213, a rotation shaft 3214, and a rotation driver 3215. The support plate 3211 may have a top surface that is the same or similar in shape to the substrate W. A support pin 3212 and a choke pin 3213 may be provided on the upper surface of the support plate 3211. The support pins 3212 can support the bottom surface of the substrate W. The support pin 3212 may protrude upward from the top surface of the support plate 3211. The choke pins 3213 can fix the supported substrate W. The choke pins 3213 can support the sides of the supported substrate W. Through this, it is possible to prevent the rotating substrate W from being separated laterally due to rotational force. A rotation shaft 3214 may be connected to a lower portion of the support plate 3212. The rotation shaft 3214 can rotate the support plate 3211 by receiving rotational force from the rotation driver 3215. Therefore, the substrate W placed on the support plate 3211 can be rotated. The choke pin 3213 can prevent the substrate W from leaving the normal position.

The supply member 3220 can spray the processing liquid onto the substrate W. The processing solution can include a developer. The supply member 3220 may include a nozzle 3221, a nozzle bar 3222, a nozzle shaft 3223, and a nozzle shaft driver 3224. The nozzle 3221 can supply a developer to the substrate W placed on the support plate 3211. The nozzle 3221 may be formed on the bottom of one end of the nozzle bar 3222. Nozzle bar 3222 may be coupled to nozzle shaft 3223. The nozzle shaft 3223 may be provided to be able to move up and down or rotate. The nozzle shaft driver 3224 can adjust the position of the nozzle 3221 by moving the nozzle shaft 3223 up and down or rotating it. The nozzle 3221 may be connected to a developer supply line (not shown). The developer supply line can be connected to a developer supply source (not shown). A valve may be installed in the developer supply line.

The collection member 3230 may include a collection cylinder 3231, a collection line 3232, a lifting bar 3233, and a lifting driver 3234. The collection tube 3231 may be provided in the shape of an annular ring surrounding the support plate 3211. A plurality of collection tubes 3231 may be provided. When viewed from above, the plurality of collection tubes 3231 may be provided in a ring shape that becomes farther away from the support plate 3211 in order. The farther the collection tube 3231 is from the support plate 3211, the higher the height of the collection tube 3231 can be provided. A collection port 3232 may be formed in the space between the collection tubes 3231, into which the developer splashed from the substrate W flows. A collection line 3233 may be formed on the bottom surface of the collection cylinder 3231. The lifting bar 3234 may be connected to the collection tube 3231. The lifting bar 3231 can move the collection tube 3231 up and down by receiving power from the lifting driver 3235. When there are a plurality of recovery tubes 3231, the lifting bar 3233 can be connected to the outermost recovery tube 3231. The lift driver 3235 lifts and lowers the collection cylinder 3231 through the lift bar 3234, and can adjust the collection ports 3232 into which the processing liquid scattered among the plurality of collection ports 3232 flows.

In other embodiments, the wet processing chamber 3200 may perform a cleaning process on the substrate W. At this time, the processing liquid discharged from the wet processing chamber 3200 may be a cleaning liquid. The cleaning solution may include chemicals, DIW, and organic solvents. The organic solvent may include isopropyl alcohol (IPA). In this case, the nozzle member 3220 of the wet processing chamber 3200 may each include a chemical supply member, a pure water supply member, and an organic solvent supply member. In the wet processing chamber 3200, the patterned surface of the substrate W can be cleaned. In this case, the substrate processing apparatus does not include the heat processing chamber 3400. Accordingly, the wet processing chambers 3200 and the backside cleaning chambers 3300 may be provided in corresponding numbers.

Referring again to FIGS. 3 to 6, a plurality of buffer chambers 3600 may be provided. A portion of the buffer chamber 3600 may be disposed between the index module 20 and the transfer chamber 3100. Hereinafter, these buffer chambers will be referred to as front buffers 3602 (front buffers). A plurality of pre-stage buffers 3602 are provided and positioned so as to be stacked on top of each other along the vertical direction. Other portions of the buffer chambers 3602 and 3604 may be disposed outside the transfer chamber 3100 in the second direction 12. Hereinafter, these buffer chambers will be referred to as rear buffers 3604 (rear buffers). A plurality of rear-stage buffers 3604 are provided and are stacked on top of each other in the vertical direction. Each of the front stage buffer 3602 and the rear buffer 3604 temporarily stores W on a plurality of substrates. The substrate W stored in the pre-stage buffer 3602 is carried in or carried out by the index robot 2200 and the transfer robot 3120. The substrate W stored in the subsequent buffer 3804 can be carried in or out by the transfer robot 3120.
The substrate processing apparatus may further include a controller (not shown) that controls the transport unit. In one embodiment, the controller may control the transport unit such that the substrate W is transported into the wet processing chamber 3200 and then into the supercritical chamber 3500. The substrate W may be developed with a developer in the wet processing chamber 3200, and the developer remaining on the substrate W may be removed in the supercritical chamber 3500.

In other embodiments, the controller may control the transport unit such that the substrate W is transported into the wet processing chamber 3200 and then into the supercritical chamber 3500. In this case, the patterned surface of the substrate W may be cleaned in the wet processing chamber 3200, and the organic solvent remaining on the substrate W may be removed from the substrate W in the supercritical processing chamber 3500.

Hereinafter, a supercritical chamber and a substrate processing method according to the present invention will be described in detail with reference to the drawings.

FIG. 13 is a flowchart of a substrate processing method according to an embodiment of the present invention, and FIG. 14 is a diagram illustrating a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIGS. 13 and 14, the substrate processing apparatus includes a supply unit 4000 that supplies processing fluid to a processing space 3502 inside a supercritical chamber 3500, and an exhaust unit 5000 that exhausts the atmosphere inside the supercritical chamber 3500. , a supply unit 4000, and a controller 6000 that controls the exhaust unit 5000.

The supply unit 4000 includes a supply source (not shown) in which processing fluid is stored, a main supply line 4100 connected to the supply source, and an upper supply line branched from the main supply line 4100 and connected to the upper wall of the chamber 3500. The lower supply line 4300 may include a line 4200 and a lower supply line 4300 branched from the main supply line 4100 and connected to a lower wall of the chamber 3500 . At this time, the direction toward the supply source is called upstream, and the opposite direction from upstream is called downstream. Further, the supply unit 4000 may include a first heater 4210 installed on the upper supply line 4200 to heat the processing fluid, a first temperature sensor 4220, a first filter 4230, and an upper opening/closing valve 4240. can. At this time, the first heater 4210, the first temperature sensor 4220, the first filter 4230, and the upper opening/closing valve 4240 may be installed in order from upstream to downstream. The supply unit 4000 also includes a second heater 4310 installed on the lower supply line 4300 to heat the processing fluid, a second temperature sensor 4320, a second filter 4330, a lower opening/closing valve 4340, and a first pressure sensor. 4350. The second heater 4310, the second temperature sensor 4320, the second filter 4330, the lower opening/closing valve 4340, and the first pressure sensor 4350 may be arranged in order from upstream to downstream.

The exhaust unit 5000 includes an exhaust line 5100 coupled to the lower wall of the chamber 3500, an on-off valve 5110 installed on the exhaust line 5100, a pressure sensor 5120, a temperature sensor 5130, and a non-exit (not shown). be able to. At this time, the on-off valve 5110, the pressure sensor 5120, the temperature sensor 5130, and the non-exit may be installed in order in the farthest direction in the chamber 3500. That is, the on-off valve 5110, the pressure sensor 5120, the temperature sensor 5130, and the non-exit may be installed in order from the chamber 3500 toward the non-exit.

The processing fluid can include a supercritical fluid. Specifically, it can include CO ₂ and SCCO ₂ . Processing fluid may be supplied to the processing space 3502 of the chamber 3500 through a main supply line 4100, an upper supply line 4200, and a lower supply line 4300. The first heater 4210 can heat the processing fluid passing through the upper supply line 4200. The first temperature sensor 4220 may sense the temperature of the processing fluid heated by the first heater 4120. The first temperature sensor 4210 may transmit the sensed temperature of the processing fluid to the controller 6000. The first filter 4210 can filter the processing fluid passing through the upper supply line 4200. The first filter 4210 may remove foreign substances and impurities contained in the processing fluid passing through the upper supply line 4200. The first filter 4230 may be installed between the first heater 4210 and the upper opening/closing valve 4240. The upper opening/closing valve 4240 may adjust the flow rate of the processing fluid that is introduced through the inlet on the upper wall of the chamber 3500 .

A second heater 4310 can heat the processing fluid passing through the lower supply line 4300. The second temperature sensor 4320 may sense the temperature of the processing fluid heated by the second heater 4310. The second temperature sensor 4320 may transmit the sensed temperature of the processing fluid to the controller 6000. The second filter 4330 can filter the processing fluid passing through the lower supply line 4300. The second filter 4330 may remove foreign substances and impurities contained in the processing fluid passing through the lower supply line 4300. The second filter 4330 may be installed between the second heater 4310 and the lower opening/closing valve 4340. The lower opening/closing valve 4340 may adjust the flow rate of the processing fluid that is introduced through the inlet on the lower wall of the chamber 3500 . The first pressure sensor 4350 may sense the pressure of the processing fluid flowing through the lower supply line 4300. The first pressure sensor 4350 may transmit the sensed pressure to the controller 6000.

The exhaust unit 5000 can exhaust the processing fluid inside the chamber 3500 to the outside. Processing fluid inside the chamber 3500 may be exhausted to the outside through the exhaust line 5100. The opening/closing valve 5110 can adjust the flow rate of the processing fluid flowing through the exhaust line 5100 to control the exhaust flow rate. The pressure sensor 5120 may sense the pressure of the processing fluid flowing through the exhaust line 5100 and may transmit the sensed value to the controller 6000. Temperature sensor 5130 can sense the temperature of the process fluid flowing through exhaust line 5100.

The controller 6000 controls an upper opening/closing valve 4240, a lower opening/closing valve 4340, and an exhaust unit 5000 to supply and exhaust heated processing fluid to the processing space before performing a processing process on a substrate in the processing space. Opening/closing valve 5110 can be controlled. At this time, before the substrate W is introduced into the processing space 3502, the controller 6000 operates an upper opening/closing valve 4240, a lower opening/closing valve 4340, and an exhaust unit to supply and exhaust the heated processing fluid to the processing space 3502. 5000 on/off valves 5110 can be controlled. The controller 6000 can control the upper opening/closing valve 4240 and the lower opening/closing valve 4340 to open/close at the same time before the processing process of the substrate W is performed. In this case, the processing fluid may be simultaneously supplied to the upper supply line 4200 and the lower supply line 4300 before the substrate W is introduced into the processing space. The controller 6000 can control the substrate W to be introduced into the processing space 3502 when the processing fluid is heated to a preset temperature or higher by the first and second heaters 4210 and 4310. At this time, the set temperature may be lower than a critical temperature, which is the temperature at which the processing fluid begins to change to a supercritical state.

The substrate processing method according to the present invention includes a substrate sealing step (S100), a pre-supply step (S200), a chamber opening step (S300), a substrate loading step (S400), a process proceeding step (S500), and a substrate discharging step (S600). be able to.

In the substrate sealing step (S100), when a substrate W loading signal is transmitted, the processing space is sealed before the substrate is loaded. In the pre-supply step (S200), the processing fluid can be supplied to and discharged from the processing space while the processing space is sealed. At this time, the processing fluid can be preheated to a set temperature by pre-supplying the processing fluid. Further, in the pre-supply step (S200), the processing fluid includes a first supply route supplied from the upper part of the processing space and a second supply route supplied from the lower part of the processing space, and the processing fluid is supplied from the first supply route. and the second supply path at the same time. In the chamber opening step (S300), the controller may open the chamber 3500 when the temperature of the processing fluid sensed by the temperature sensor reaches a set temperature. In the substrate loading step (S400), a substrate may be loaded into a processing space. In the process proceeding step (S500), a processing fluid heated to a preset temperature or higher may be supplied to the processing space to process the substrate. In the substrate discharging step (S600), when the processing on the substrate is completed, the processing space can be opened and the substrate can be discharged.

The substrate processing method according to the present invention can perform a substrate processing process on a plurality of substrates. At this time, for each of the plurality of substrates, a substrate sealing step (S100), a pre-supply step (S200), a chamber opening step (S300), a substrate loading step (S400), a process progressing step (S500), and a substrate discharging step are performed. (S600) may be performed. That is, the pre-supply step can be performed for each of a plurality of substrates to be processed.

FIG. 15 is a graph illustrating the temperature of a processing fluid and the timing of substrate loading and unloading according to an embodiment of the present invention. In FIG. 15, 'S' means the time of substrate input, 'F' means the time of substrate ejection, and P1 means that the substrate processing process is performed on one substrate. That is, FIG. 15 shows that the processing process is performed on a total of three substrates.

Referring to FIG. 15, in the substrate processing method according to the present invention, the substrate can be processed after the processing fluid is heated to a temperature higher than a predetermined temperature.

Conventional supercritical processing equipment includes a heater on a supply line to raise the temperature of supercritical fluid. However, due to the high-pressure characteristics of the supercritical chamber, the substrate processing process is performed without the supercritical fluid being circulated and the temperature of the fluid being sufficiently raised, resulting in process failure. Furthermore, since the supercritical fluid does not have a circulating structure, if the supercritical fluid is stagnated, the temperature of the fluid may drop, resulting in process failure. Furthermore, if the input intervals between a plurality of substrates are different, the temperature of the processing fluid differs for each input substrate, making it difficult to perform uniform processing.

However, according to the present invention, before the substrate processing process is performed, the supercritical fluid is passed through the processing space inside the chamber 3500 and exhausted, thereby controlling the temperature of the fluid flowing through the supply line and the temperature of the chamber. Since the substrate can be loaded and the processing process can proceed with the internal temperature sufficiently raised, the above-mentioned problem can be solved. In addition, the temperature of the fluid can be raised sufficiently by supplying supercritical fluid linearly using the supply line connected to the chamber without installing a separate drain line for pre-circulating the supercritical fluid. This has the effect of simplifying the device.

Conventionally, when drying the substrate W after development processing, a spin drying method has been used in which the substrate W is rotated and dried. However, as the patterns formed on the substrate become finer, the existing spin drying method causes a leaning phenomenon in which the pattern collapses or bends. However, according to an embodiment of the present invention, after the development process is performed on the substrate W, the substrate W is immediately transported to the supercritical chamber 3500 with the developer or cleaning solution remaining on the substrate W. In the supercritical chamber 3500, supercritical fluid is supplied to the substrate for drying, so that the above-described leaning phenomenon can be minimized. Further, since the substrate W is transported with the developing solution or the cleaning solution remaining on the substrate W, it is possible to prevent the problem of deterioration of quality due to drying of the substrate during transportation.

Further, according to the present invention, it is possible to provide an apparatus that can efficiently perform development processing. Further, the present invention can provide an apparatus that can prevent a leaning phenomenon in which a pattern collapses or bends. Further, the present invention can provide a platform for a substrate processing apparatus that can efficiently perform a developing process and a supercritical process. Furthermore, the present invention can provide a platform for a substrate processing apparatus that is capable of cleaning a non-patterned surface of a substrate. Further, it is possible to prevent back contamination caused by contaminants on the non-patterned surface of the substrate.

Referring to the above description, it was explained that the substrate W that has been developed in the wet processing chamber 3200 is subjected to a drying process in the supercritical chamber 3500 without a cleaning process. However, as a modification, the wet processing chamber 3200 may further include a cleaning liquid supply member that supplies a cleaning liquid for cleaning the non-patterned surface of the substrate W. At this time, the cleaning solution may include thinner. In this case, the supercritical chamber 3500 can dry the thinner remaining on the substrate W.

The detailed description above has been made based on a substrate processing apparatus according to an embodiment of the present invention. However, the present invention is not limited to the above-mentioned example, but is applicable to all apparatuses that process substrates.

3500 Supercritical chamber 4000 Supply unit 4100 Main supply line 4200 Upper supply line 4210 First heater 4220 First temperature sensor 4230 First filter 4240 Upper opening/closing valve 4300 Lower supply line 4210 First heater 4220 First temperature sensor 4230 First filter 4240 Upper opening/closing valve 5000 Exhaust unit 5100 Exhaust line 5110 Opening/closing valve 5120 Pressure sensor 5130 Temperature sensor 6000 Controller

Claims (18)

a chamber having a processing space inside;
a supply line in which a first on-off valve is installed and supplies processing fluid to the processing space;
a heater installed on the supply line to heat the processing fluid;
an exhaust line in which a second opening/closing valve is installed and exhausts the processing space;
A controller that controls the first on-off valve and the second on-off valve,
The controller controls the first on-off valve and the second on - off valve to supply and exhaust the heated processing fluid into the processing space before a substrate is introduced into the processing space. Processing equipment. The supply line includes an upper supply line connected to an upper wall of the chamber, and a lower supply line connected to a lower wall of the chamber,
The substrate processing apparatus according to claim 1 , wherein the heater includes a first heater installed on the upper supply line and a second heater installed on the lower supply line. The substrate processing apparatus according to claim 2 , wherein the processing fluid is simultaneously supplied to the upper supply line and the lower supply line before the substrate is introduced into the processing space. The substrate processing apparatus according to claim 1, further comprising a filter installed on the supply line and downstream of the heater. 2. The substrate processing apparatus according to claim 1, wherein the controller controls the substrate to be introduced into the processing space when the processing fluid is heated to a set temperature or higher by the heater. 6. The substrate processing apparatus according to claim 5 , wherein the set temperature is lower than a critical temperature , which is a temperature at which the processing fluid starts to change to a supercritical state. The substrate processing apparatus according to claim 1, wherein the processing fluid is a fluid in a supercritical state. The first on-off valve is
an upper opening/closing valve installed on the upper supply line;
a lower opening/closing valve installed on the lower supply line,
The controller is
3. The substrate processing apparatus according to claim 2 , wherein the upper opening/closing valve and the lower opening/closing valve are controlled to be opened and closed simultaneously before the substrate processing step is performed. 8. The substrate processing apparatus according to claim 7 , wherein the supercritical fluid dries the developer remaining on the substrate. In a device that processes a substrate,
an index module including a container in which the substrate is stored;
a processing module that performs a process on the substrate;
The processing module includes:
a buffer unit for temporarily storing the substrate;
a wet processing chamber that supplies a developer to develop the substrate;
a supercritical processing chamber that processes the substrate by supplying a supercritical fluid;
a heat treatment chamber for performing a heat treatment process on the substrate;
a transfer chamber including a transfer unit that transfers the substrate between the wet processing chamber, the supercritical processing chamber, and the heat treatment chamber;
The supercritical processing chamber includes:
a supply line that supplies the supercritical fluid to an internal processing space;
a heater installed on the supply line to heat the supercritical fluid;
an exhaust line that exhausts the processing space;
a controller that controls the supply line and the exhaust line ,
The controller is a substrate processing apparatus that controls the heated processing fluid to be supplied to and exhausted from the processing space before the substrate is introduced into the processing space. The supply line includes an upper supply line connected to an upper wall of the supercritical processing chamber, and a lower supply line connected to a lower wall of the supercritical processing chamber,
The substrate processing apparatus according to claim 10 , wherein the heater includes a first heater installed on the upper supply line and a second heater installed on the lower supply line. The substrate processing apparatus according to claim 11, wherein the controller controls the processing fluid to be supplied to the upper supply line and the lower supply line at the same time. The substrate processing apparatus according to claim 10 , further comprising a filter installed on the supply line and downstream of the heater. The substrate processing apparatus according to claim 10 , wherein the processing fluid is a fluid in a supercritical state. In a method of processing a substrate,
a sealing step for closing the processing space;
a pre-feeding step of supplying and discharging a processing fluid into the processing space after the sealing step ;
a loading step of loading the substrate into the processing space after the pre-supply step;
After the loading step, a substrate processing step of supplying the processing fluid to the processing space to process the substrate;
A substrate processing method including , after the substrate processing step, opening the processing space and carrying out the substrate. 16. The substrate processing method of claim 15 , wherein the carrying-in step is performed after the processing fluid is heated to a preset temperature or higher in the pre-supplying step. The processing fluid is supplied to the processing space from a supply path,
The supply route includes a first supply route supplied from the upper part of the processing space, and a second supply route supplied from the lower part of the processing space,
16. The substrate processing method according to claim 15 , wherein the processing fluid is simultaneously supplied to the first supply route and the second supply route. The method includes performing a substrate processing step on a plurality of substrates;
16. The substrate processing method of claim 15 , wherein the pre-supplying step is performed for each of the plurality of substrates.

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