KR20220053896A - Producing method of mask - Google Patents

Abstract

An objective of the present invention is to provide a method for manufacturing a mask, which is capable of stably forming a mask pattern when manufacturing a stick-type mask. The method for manufacturing a mask according to the present invention, which is a method for manufacturing a mask for forming an OLED pixel, comprises: a step (a) of preparing a mask metal film; a step (b) of forming a patterned first insulating portion on at least a first surface in a plurality of mask cell regions of the mask metal film; a step (c) of forming a sub-mask pattern on the mask metal film through a space between the patterns of the first insulating portion on the first surface of the mask metal film; a step (d) of bonding the first surface of the mask metal film, on which the sub-mask pattern is formed, to a support substrate with the barrier insulating part interposed therebetween; and a step (e) of producing a mask by forming a main mask pattern on the mask metal film through a space between patterns of a second insulating portion formed on a second surface of the mask metal film, which is opposite to the first surface.

Description

Mask manufacturing method {PRODUCING METHOD OF MASK}

The present invention relates to a method for manufacturing a mask. More particularly, it relates to a method of manufacturing a mask capable of stably forming a mask pattern in a long stick mask.

As a technology for forming pixels in the OLED manufacturing process, the FMM (Fine Metal Mask) method is mainly used to deposit an organic material at a desired location by attaching a thin metal mask to the substrate.

In the existing OLED manufacturing process, a mask is manufactured in a stick shape or a plate shape, and then the mask is welded and fixed to the OLED pixel deposition frame. A plurality of cells corresponding to one display may be provided in one mask.

In the case of high-definition OLED, the current QHD picture quality is 500-600 PPI (pixel per inch), with a pixel size of about 30-50㎛, and 4K UHD and 8K UHD high-definition are higher than this, such as ~860 PPI, ~1600 PPI, etc. have resolution. As such, in consideration of the pixel size of the ultra-high-definition OLED, the alignment error between each cell should be reduced to about several μm, and an error outside of this may lead to product failure, and thus the yield may be very low.

In addition, as OLEDs become large and high-resolution, the thickness of the stick mask becomes gradually thinner and large-area is required. In general, in order to form a mask pattern on a large-area stick mask, a method of etching a rolled mask metal layer has been used. Alternatively, a method of forming a mask pattern by placing a large-area stick mask on a specific support plate and etching in only one direction has been used. In the conventional method, it is not easy to form the entire part of a large-area stick mask with uniformity, especially between cells, and it is difficult to precisely control the width and depth of the mask pattern because etching is performed in only one direction. There was a problem.

Therefore, there is a need for a method of manufacturing a stick mask having a fine mask pattern that can be used for a large-area pixel process and can perform a high-quality pixel process.

Accordingly, the present invention has been devised to solve the problems of the prior art as described above, and an object of the present invention is to provide a method of manufacturing a mask capable of stably forming a mask pattern when manufacturing a stick mask.

Another object of the present invention is to provide a method of manufacturing a mask capable of precisely controlling the width, depth, etc. of a mask pattern by performing etching in both directions during a stick mask manufacturing process.

The above object of the present invention is a method for manufacturing a mask for forming an OLED pixel, comprising the steps of: (a) preparing a mask metal film; (b) forming a patterned first insulating portion on at least a first surface of the plurality of mask cell regions of the mask metal film; (c) forming a sub-mask pattern on the mask metal film through the space between the patterns of the first insulating part on the first surface of the mask metal film; (d) bonding the support substrate to the first surface of the mask metal film on which the sub-mask pattern is formed through the barrier insulating part; (e) manufacturing a mask by forming a main mask pattern on the mask metal film through the space between the patterns of the second insulating portion formed on the second surface opposite to the first surface of the mask metal film to manufacture a mask; achieved by the method.

(f) separating the mask from the support substrate; may further include.

In step (b), a patterned first insulating part on the first surface and a patterned second insulating part on a second surface opposite to the first surface may be formed.

In step (c), the sub mask pattern may be formed so as not to penetrate the mask metal layer.

A pattern interval of the first insulating part may be smaller than a pattern interval of the second insulating part.

In step (e), the main mask pattern may be formed to penetrate the mask metal layer, and the mask pattern may be formed by the sum of the main mask pattern and the sub mask pattern.

A main mask pattern and a sub mask pattern may be formed on the plurality of mask cell regions.

Step (a) includes: (a1) preparing a mask metal film; (a2) forming a carrier portion on the second surface of the mask metal film; (a3) reducing the thickness of the mask metal layer on the first surface of the mask metal layer;

The method may further include (a4) forming an alignment mark in at least a portion of the dummy regions on both sides of the mask metal layer except for the plurality of mask cell regions.

The method may further include (between steps d and (e), separating the carrier part from the second surface of the mask metal film).

The second insulating portion is not formed on the alignment mark, and the alignment mark of the mask metal layer may be removed in step (e).

Step (a) includes: (a1) preparing a mask metal film; (a2) forming a carrier portion on the second surface of the mask metal film; and the thickness of the mask metal film on the second surface of the mask metal film may be reduced between steps (d) and (e).

According to the present invention configured as described above, there is an effect of stably forming a mask pattern when manufacturing a stick mask.

In addition, according to the present invention, there is an effect of precisely controlling the width and depth of the mask pattern by performing etching in both directions during the stick mask manufacturing process.

1 is a schematic diagram showing a process of attaching a mask to a frame.
2 to 5 are schematic views showing a manufacturing process of a mask according to an embodiment of the present invention. At each step, the upper figure shows a schematic plan view, and the lower figure shows a schematic side cross-sectional view.
6 to 8 are schematic views showing a manufacturing process of a mask according to another embodiment of the present invention. At each step, the upper figure shows a schematic plan view, and the lower figure shows a schematic side cross-sectional view.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [0012] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [0010] Reference is made to the accompanying drawings, which show by way of illustration specific embodiments in which the present invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the present invention. It should be understood that the various embodiments of the present invention are different but need not be mutually exclusive. For example, certain shapes, structures, and characteristics described herein with respect to one embodiment may be implemented in other embodiments without departing from the spirit and scope of the invention. In addition, it should be understood that the location or arrangement of individual components within each disclosed embodiment may be changed without departing from the spirit and scope of the present invention. Accordingly, the following detailed description is not intended to be taken in a limiting sense, and the scope of the present invention, if properly described, is limited only by the appended claims, along with all scope equivalents to those claimed. In the drawings, like reference numerals refer to the same or similar functions in various aspects, and the length, area, thickness, and the like may be exaggerated for convenience.

Hereinafter, in order to enable those of ordinary skill in the art to easily practice the present invention, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic diagram illustrating a process of attaching a mask 10 to a frame 20 .

The conventional mask 10 is a stick-type or a plate-type, and the stick-type mask 10 of FIG. 1 can be used by welding and fixing both sides of the stick to the OLED pixel deposition frame. A plurality of display cells C are provided in the body of the mask 10 (or the mask film 11 ). One cell C corresponds to one display such as a smart phone. A pixel pattern P is formed in the cell C to correspond to each pixel of the display.

Referring to (a) of FIG. 1 , the stick mask 10 is loaded on the frame 20 in the form of a square frame in a flat state by applying tensile forces F1 to F2 in the long axis direction of the stick mask 10 . The cells C1 to C6 of the stick mask 10 are located in the blank area inside the frame 20 of the frame 20 .

Referring to FIG. 1 (b), after aligning while finely adjusting the tensile force (F1 to F2) applied to each side of the stick mask 10, a part of the side of the stick mask 10 is welded (W). Accordingly, the stick mask 10 and the frame 20 are interconnected. Figure 1 (c) shows a cross-section of the stick mask 10 and the frame interconnected.

After the interconnection in which the plurality of stick masks 10 and the frame 20 are interconnected is placed in close contact with or close to the substrate for forming the OLED pixel of the OLED pixel deposition apparatus, the organic material source is deposited under the stick mask 10 . can The organic material source deposited on the substrate for forming the OLED pixel through the pixel pattern P of the mask 10 may act as a pixel of the OLED.

Conventionally, in order to form a mask pattern on a large-area stick mask, etching is performed on a rolled mask metal layer, or a large-area stick mask is placed on a specific support plate and etching is performed in only one direction. It is not easy to apply a process for reducing the thickness of a rolled metal film, which is a rolled mask metal film. It is inconvenient to use a material that has been separately reduced in thickness before the mask pattern forming process or to perform the thickness reduction after the mask pattern forming process. In addition, since both ends of the rolled mask metal film are rolled on the support shaft, the support is unstable, so there is a problem in that the non-uniformity of the mask pattern increases between cells of the large-area stick mask. When etching is performed only in one direction, there is a problem in that it is difficult to precisely control the width and depth of the mask pattern.

Accordingly, the present invention applies the mask pattern etching process in both directions and at the same time supports the large-area stick mask by the support substrate or the carrier part to stably perform the mask pattern formation process, and also stably reduce the thickness of the mask metal film A method for manufacturing a large-area stick mask that can be performed is provided.

2 to 5 are schematic views showing a manufacturing process of a mask according to an embodiment of the present invention. At each stage, the upper figure shows a schematic plan view, and the lower figure shows a schematic side cross-sectional view.

First, referring to FIG. 2A , a mask metal film 110 for manufacturing a stick mask may be prepared. A plurality of mask patterns P are formed in the stick mask 100 (refer to FIG. 5 ) of the present invention, and a plurality of cells C, which are units in which the mask patterns P are clustered, are formed in one stick mask 100 . may be included. One mask cell C may correspond to one display such as a smart phone. 5 shows an embodiment in which five mask cells C are included in the stick mask 100 .

The mask metal layer 110 (or the stick mask 100 ) may be made of a material such as invar, super invar, nickel (Ni), or nickel-cobalt (Ni-Co). As the mask metal film 110 (or the stick mask 100 ), a metal sheet produced by a rolling process or electroforming may be used.

Next, the patterned first insulating portion 31 may be formed on at least the first surface 111 of the mask metal film 110 (eg, the lower surface of the mask metal film 110 ). The space 32 between the patterns of the first insulating part 31 may be provided to correspond to a plurality of mask cells (for example, five mask cells).

In addition, the second insulating portion 41 may be formed on the second surface 112 (eg, the upper surface of the mask metal film 110 ) opposite to the first surface 111 of the mask metal film 110 . can The space 42 between the patterns of the second insulating part 41 may be provided to correspond to a plurality of mask cells (for example, five mask cells).

As will be described later, since the first insulating part 31 is a pattern for forming the sub mask pattern P2 and the second insulating part 41 is a pattern for forming the main mask pattern P1 , the pattern of the first insulating part 31 is It is preferable that the interval (width of the interpattern space 32) is smaller than the pattern interval of the second insulating portion 41 (width of the interpattern space 42).

The first and second insulating portions 31 and 41 may be formed of a photoresist material using a printing method or the like.

Next, referring to FIG. 2B , a sub mask pattern P2 may be formed on the first surface (lower surface) of the metal layer 110 . The sub mask pattern P2 may be formed by etching the space 32 between the patterns of the first insulating part 31 formed on the first surface (lower surface) of the mask metal layer 110 . The sub mask pattern P2 may be formed in each mask cell C region of the mask metal layer 110 , and a method such as dry etching or wet etching may be used without limitation.

For example, when wet etching is used, an undercut is generated by isotropic etching, so that the width of the sub-mask pattern P2 may be greater than the width of the space 32 between the patterns of the first insulating part 31 . . For this reason, it is preferable to form the sub mask pattern P2 only by a very small thickness with respect to the thickness of the mask metal layer 110 . That is, the etching is performed only by a very small thickness so that the mask metal layer 110 is not penetrated, so that the width of the lower portion of the mask pattern P, which is an intended set value, can be approximated. According to an embodiment, the sub mask pattern P2 may have a thickness of less than about 5 μm, preferably less than about 2 μm, based on the mask metal layer 110 having a thickness of about 20 μm. The width of the sub mask pattern P2 may be about 10 to 25 μm.

Next, referring to FIG. 3C , the first insulating part 31 on the first surface of the mask metal layer 110 may be removed. The sub mask pattern P2 may be exposed on the first surface. The second insulating part 41 may be formed in this step without forming the second insulating part 41 in step (a) of FIG. 2 .

Next, referring to FIG. 3D , the support substrate 50 may be prepared, and the first surface of the mask metal layer 110 may be adhered to the support substrate 50 . The support substrate 50 preferably has a flat plate shape having an area larger than that of the mask metal layer 110 , and may be formed of a material such as glass or quartz.

The first surface of the mask metal layer 110 and the support substrate 50 may be bonded to each other with the barrier insulating part 60 interposed therebetween. The barrier insulating part 60 may be previously formed on the first surface of the mask metal film 110 and/or the upper surface of the support substrate 50 before adhesion. The barrier insulating part 60 may also be made of a photoresist material like the first and second insulating parts 31 and 41 . The barrier insulating part 60 may be filled in the sub mask pattern P2 exposed on the first surface of the mask metal layer 110 . Accordingly, it may serve to prevent the shape of the sub mask pattern P2 from being changed in the process of forming the main mask pattern P1, which will be described later.

Meanwhile, a temporary adhesive part (not shown) may be further interposed between the barrier insulating part 60 and the support substrate 50 . The temporary adhesive part can make the mask metal film 110 better adhere to and supported on one surface of the support substrate 50 until the mask pattern P process is completed on the mask metal film 110 and the mask 100 is manufactured. there is. The temporary adhesive part 55 may use an adhesive that can be separated by applying heat or an adhesive that can be separated by UV irradiation.

For example, the temporary adhesive may use liquid wax. As the liquid wax, the same wax used in the polishing step of a semiconductor wafer or the like may be used, and the type is not particularly limited. The liquid wax is a resin component for controlling adhesion, impact resistance, and the like with respect to holding power, and may include materials such as acrylic, vinyl acetate, nylon, and various polymers and solvents. For example, the temporary adhesive may use acrylonitrile butadiene rubber (ABR) as a resin component and SKYLIQUID ABR-4016 containing n-propyl alcohol as a solvent component. The liquid wax may form the temporary adhesive portion 55 using spin coating.

In the etching process of forming the main mask pattern P1, which will be described later, the barrier insulating part 60 enters the interface between the mask metal film 110 and the temporary adhesive part to damage the temporary adhesive part/support substrate 50, It may serve to prevent an etching error of the main mask pattern P1 from occurring. The barrier insulating part 60 may be formed on the mask metal layer 110 using a printing method using a negative or positive photoresist material that is not etched by an etchant. In addition, in order to preserve the original shape in the wet etching process, the barrier insulating part 60 may use a curable negative photoresist, a negative photoresist including an epoxy, or the like. As an example, an epoxy-based SU-8 photoresist or a black matrix photoresist may be used to cure the temporary adhesive in a process such as baking.

Next, referring to FIG. 4E , a main mask pattern P1 may be formed on a second surface (upper surface) opposite to the first surface (lower surface) of the mask metal layer 110 . The main mask pattern P1 may be formed by etching the space 42 between the patterns of the second insulating part 41 formed on the second surface (upper surface) of the mask metal layer 110 . The main mask pattern P1 may be formed to correspond to the sub mask pattern P2 . The main mask pattern P1 may be formed in each mask cell region of the mask metal layer 110 , and a method such as dry etching or wet etching may be used without limitation.

For example, when wet etching is used, the width of the main mask pattern P1 may be greater than the width of the space 42 between the patterns of the second insulating part 41 because an undercut is generated by the isotropic etching. . Considering this, it is preferable to set the width between the patterns of the second insulating part 41 . According to an exemplary embodiment, the thickness of the main mask pattern P1 may be formed to a thickness of about 15 to 18 μm based on the mask metal layer 110 having a thickness of about 20 μm. The width of the main mask pattern P1 may be about 30-40 μm, but is not limited thereto.

The etching process of the main mask pattern P1 may be performed up to the interface where the sub mask pattern P2 is formed, that is, a portion where the barrier insulating part 60 is formed. The main mask pattern P1 may communicate up to the sub mask pattern P2 .

Next, referring to FIG. 4F , the second insulating part 41 may be removed. The mask metal layer 110 may be penetrated by the formation of the main mask pattern P1 , and the mask pattern P may be formed by the sum of the main mask pattern P1 and the sub mask pattern P2 . As the plurality of mask patterns P are formed, the mask metal layer 110 may function as the mask 100 .

Next, referring to FIG. 5G , a step of separating the mask 100 from the support substrate 50 may be further performed. Separation may be performed by removing the barrier insulating part 60 between the support substrate 50 and the mask 100 , and if the support substrate 50 and the mask 100 are further bonded through the temporary adhesive part, the temporary adhesive part Separation may be performed through at least one of heat application, chemical treatment, ultrasonic application, and UV application.

Accordingly, the manufacturing of the stick mask 100 including the plurality of mask cells may be completed.

6 to 8 are schematic views showing a manufacturing process of a mask according to another embodiment of the present invention. At each stage, the upper figure shows a schematic plan view, and the lower figure shows a schematic side cross-sectional view.

The manufacturing process of the mask according to another embodiment of the present invention may be performed with some changes in the steps described above with reference to FIGS. 2 to 5 . Steps indicated by (a1), (b1), etc. are steps corresponding to steps (a) and (b) of FIGS. 2 to 5, and the like.

Referring to (a1) of FIG. 6 , after preparing the mask metal film 110 ′ for manufacturing the stick mask, carrier parts 65 and 70 on the second surface (upper surface) of the mask metal film 110 ′. can form. The carrier part may be the carrier substrate 70 in the form of a flat plate on which the temporary adhesive part 65 is formed, but a carrier part in the form of a protective film may also be used.

Next, referring to FIG. 6A , a process of reducing the thickness (T) may be performed while the mask metal layer 110 ′ is adhesively supported on the carrier parts 65 and 70 . In the thickness reduction process T (or planarization process), one surface (lower surface) of the mask metal film 110 may be mirror-finished, and at the same time, a portion of the mask metal film 110 may be removed to reduce the thickness. The thickness reduction (T) may be performed by a CMP (Chemical Mechanical Polishing) method, and a known CMP method may be used without limitation. In addition, the thickness of the mask metal layer 110 ′ may be reduced (T) by a chemical wet etching or a dry etching method. In addition, a planarization process capable of reducing the thickness of the mask metal layer 110 ′ may be used without limitation.

Since the mask metal layer 110 ′ manufactured by the rolling process has a thickness greater than several tens of μm, the thickness may be reduced to manufacture a mask having high resolution. In addition, thickness reduction or planarization process may be performed on the mask metal film 110 ′ manufactured by the electroplating process to control surface characteristics and thickness. As the thickness of the mask metal layer 110 ′ is reduced, the thickness of the mask metal layer 110 ′ -> 110 may be about 5 μm to 20 μm.

Since the carrier parts 65 and 70 adhesively support the mask metal film 110 ′, there is an advantage in that the thickness reduction (T) process can be stably performed. The thickness reduction may be performed only on the mask cell (C) region, which is the region where the mask pattern (P) is to be formed. Then, in the dummy region other than the mask cell (C) region, the welding portion (not shown) is formed to be relatively thick. When welding the mask 100 to a frame (not shown), there is an advantage that welding is performed well.

Subsequently, referring to FIG. 7A , a patterned first insulating part 31 may be formed on the first surface (lower surface) of the mask metal layer 110 . Since this is the same as step (a) of FIG. 2 , a detailed description thereof will be omitted.

Meanwhile, before forming the first insulating part 31 , alignment marks AM may be formed in at least a portion of both dummy regions except for the plurality of mask cell regions of the mask metal layer 110 . The alignment marks AM may be formed on both dummy areas so that they can be removed later in the main mask pattern P1 forming step (after step (d1) of FIG. 8, corresponding to step (e) of FIG. 4). there is. The alignment mark AM separates the mask metal layer 110 from the carrier parts 65 and 70 and adheres it to the support substrate 50 , and forms the main mask pattern P1 corresponding to the sub mask pattern P2 . It can be used as an alignment reference when forming the second insulating part 41 for The alignment mark AM may also be formed through an etching process like the process of forming the mask pattern P. The alignment mark AM may be partially formed to pass through the mask metal layer 110 or by half etching.

Subsequently, referring to FIG. 7B , a sub mask pattern P2 may be formed on the first surface (lower surface) of the metal layer 110 . Since this is the same as step (b) of FIG. 2 , a detailed description thereof will be omitted.

Next, referring to FIG. 8C , the first insulating part 31 on the first surface of the mask metal layer 110 may be removed. The sub mask pattern P2 may be exposed on the first surface.

Next, referring to FIG. 8D , the support substrate 50 may be prepared, and the first surface of the mask metal layer 110 may be adhered to the support substrate 50 . This is the same as step (d) of FIG. 3 . However, the barrier insulating portion 60 may be filled in the sub mask pattern P2 as well as in the alignment mark AM.

In addition, the second insulating portion 41 may be formed on a second surface of the mask metal film 110 opposite to the first surface (eg, an upper surface of the mask metal film 110 ). In this case, the second insulating part 41 may not be formed on the alignment mark AM. The alignment mark AM may be removed by being exposed to an etchant in the subsequent etching for forming the main mask pattern P1 .

Subsequently, a main mask pattern P1 may be formed on the second surface (upper surface) of the mask metal layer 110 . The main mask pattern P1 may be formed by etching the space 42 between the patterns of the second insulating part 41 formed on the second surface (upper surface) of the mask metal layer 110 . This corresponds to (e) of FIG. 4 , and at the same time that the main mask pattern P1 is formed, a portion of the dummy area in which the alignment mark AM is formed may also be removed by etching.

Thereafter, the manufacturing of the stick mask 100 may be completed through further steps of FIGS. 4 (f) and 5 (g).

Meanwhile, the process of reducing the thickness (T) of the mask metal layer 110 ′ as shown in FIG. 6A may be performed before the formation of the main mask pattern P1 . Since the thickness reduction T is performed on the opposite surface of the sub mask pattern P2 in a state in which the sub mask pattern P2 is formed, the main mask pattern P1 is not affected. In addition, since the mask metal film 110 ′ is adhesively supported on the support substrate 50 with the barrier insulating portion 60/temporary adhesive interposed therebetween, the advantage of stably performing the thickness reduction (T) process is there is.

As described above, in the present invention, the etching process of the mask pattern P can be applied in both directions while the mask metal film 110 is adhesively supported using the support substrate 60 and the carrier parts 65 and 70 . , the mask pattern P can be stably formed, and a uniform mask pattern P can be implemented for each cell in the large-area stick mask 100 . In addition, there is an effect that the thickness reduction process of the mask metal film 110 can be stably performed.

Although the present invention has been illustrated and described with reference to preferred embodiments as described above, it is not limited to the above-described embodiments and is not limited to the above-described embodiments, and various methods can be made by those of ordinary skill in the art to which the invention pertains without departing from the spirit of the present invention. Transformation and change are possible. Such modifications and variations are intended to fall within the scope of the present invention and the appended claims.

31, 41: first and second insulating parts
32, 42: a space between the first and second insulating part patterns
50: support substrate
60: barrier insulation
65, 70: carrier part
100: mask
C: cell, mask cell
DM: dummy, mask dummy
P: mask pattern
P1: main mask pattern
P2: sub mask pattern

Claims (12)

A method of manufacturing a mask for forming an OLED pixel, comprising:
(a) preparing a mask metal film;
(b) forming a patterned first insulating portion on at least a first surface of the plurality of mask cell regions of the mask metal film;
(c) forming a sub-mask pattern on the mask metal film through the space between the patterns of the first insulating part on the first surface of the mask metal film;
(d) bonding the support substrate to the first surface of the mask metal film on which the sub-mask pattern is formed through the barrier insulating part;
(e) manufacturing a mask by forming a main mask pattern on the mask metal film through a space between the patterns of the second insulating portion formed on a second surface opposite to the first surface of the mask metal film;
A method of manufacturing a mask, comprising: According to claim 1,
(f) separating the mask from the support substrate;
Further comprising, a method of manufacturing a mask. According to claim 1,
In step (b), a patterned first insulating portion on a first surface and a patterned second insulating portion on a second surface opposite to the first surface are formed. According to claim 1,
In step (c), the sub-mask pattern is formed so as not to penetrate the mask metal film, the mask manufacturing method. According to claim 1,
A method of manufacturing a mask, wherein a pattern interval of the first insulating portion is smaller than a pattern interval of the second insulating portion. According to claim 1,
In step (e), the main mask pattern is formed to penetrate the mask metal film, and the mask pattern is formed by the sum of the main mask pattern and the sub mask pattern. According to claim 1,
A method of manufacturing a mask, comprising forming a main mask pattern and a sub mask pattern on a plurality of mask cell regions. According to claim 1,
(a) step,
(a1) preparing a mask metal film;
(a2) forming a carrier portion on the second surface of the mask metal film;
(a3) reducing the thickness of the mask metal film on the first surface of the mask metal film;
A method of manufacturing a mask, comprising: 9. The method of claim 8,
(a4) forming an alignment mark in at least a portion of the dummy regions on both sides of the mask metal film except for the plurality of mask cell regions;
Further comprising, a method of manufacturing a mask. 9. The method of claim 8,
between steps (d) and (e), separating the carrier portion from the second side of the mask metal film;
Further comprising, a method of manufacturing a mask. 11. The method of claim 10,
A method of manufacturing a mask, wherein the second insulating portion is not formed on the alignment mark, and the alignment mark of the mask metal film is removed in step (e). According to claim 1,
(a) step,
(a1) preparing a mask metal film;
(a2) forming a carrier portion on the second surface of the mask metal film;
including,
A method of manufacturing a mask, wherein the thickness of the mask metal film is reduced on the second side of the mask metal film between steps (d) and (e).

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