KR20220018980A - Laser processing apparatus and method, chip transfer apparatus and method - Google Patents

Abstract

To provide a laser processing apparatus capable of rapidly processing a plurality of chips to be processed among a plurality of chips arranged in a matrix at a predetermined pitch in vertical and horizontal directions on a workpiece, even if they are non-uniformly distributed. Specifically, the laser oscillator, the relative movement unit, the beam size change unit for changing the beam irradiation range that can be processed by one shot of beam irradiation to the work, and the distribution information of the chips to be processed distributed on the work A processing chip distribution information acquisition unit to be acquired; a processing pattern generation unit generating a processing pattern for each workpiece to be processed based on the distribution information of the processing target chips; and a plurality of processing distributed on the workpiece based on the processing pattern. A processing control unit for sequentially processing the target chips is provided, and the processing pattern generation unit includes a batch processing area search unit for searching for an area that can be integrated and processed in one shot with respect to a plurality of adjacent processing target chips. .

Description

Laser processing apparatus and method, chip transfer apparatus and method

The present invention relates to a laser processing apparatus and method for processing by irradiating a laser beam to a plurality of non-uniformly distributed processing target chips among a plurality of chips arranged in a matrix at a predetermined pitch in vertical and horizontal directions on a work, and a donor substrate disposed on the surface A chip transfer apparatus and method for transferring a transfer target chip to a transfer target site set on a target substrate.

DESCRIPTION OF RELATED ART Conventionally, the apparatus (laser processing apparatus) which irradiates the laser beam focused on the spot (so-called laser ablation) is known for the removal of the thin film formed into a film, etc. on a workpiece|work.

And the technique of irradiating a laser beam to the fuse provided in the circuit pattern of a semiconductor device, and cutting|disconnecting wiring is proposed (for example, patent document 1).

In addition, in a transfer apparatus for selectively transferring a plurality of elements (chips) arranged on a transfer source substrate (workpiece) to another substrate, a technique for transferring a chip formed on a work piece by using a laser beam and a galvano scanner is known. There is (for example, patent document 2).

Japanese Patent Laid-Open No. 11-19788 Japanese Patent No. 4600178 Publication

In the prior art, when a large number of chips to be processed are non-uniformly distributed on one workpiece, the processing is performed by irradiating a laser beam for each chip. In this method, even when a plurality of chips to be machined are adjacent to each other in a state where they are integrated, they are machined one by one.

Therefore, the present invention has been made in view of the above problems, and among a plurality of chips arranged in a matrix at a predetermined pitch in length and width on a workpiece, a laser processing apparatus and method capable of rapid processing of a number of non-uniformly distributed chips to be processed are provided. intended to provide

In order to solve the above problems, one aspect of the present invention is

A laser processing apparatus for processing by irradiating a laser beam to a plurality of non-uniformly distributed processing target chips among a plurality of chips arranged in a matrix at a predetermined pitch in vertical and horizontal directions on a workpiece,

A laser oscillator emitting a laser beam,

A relative moving part for changing the irradiation position of the laser beam with respect to the work;

A beam size changing unit for changing the beam irradiation range that can be processed with one shot of beam irradiation on the work;

a machined chip distribution information acquisition unit for obtaining distribution information of chips to be machined distributed on the work;

a processing pattern information generating unit that generates processing pattern information for each workpiece to be processed based on the distribution information of the processing target chip;

A processing control unit for sequentially processing a plurality of processing target chips distributed on a workpiece based on processing pattern information;

The processing pattern information generation unit,

A batch processing area search unit is provided for searching for an area that can be integrated and machined in one shot with respect to a plurality of adjacent chips to be machined.

In addition, another aspect of the present invention,

A laser processing method for processing by irradiating a laser beam to a plurality of non-uniformly distributed processing target chips among a plurality of chips arranged in a matrix at a predetermined pitch in vertical and horizontal directions on a workpiece,

A laser oscillator emitting a laser beam,

Relative movement means for changing the irradiation position of the laser beam with respect to the work;

A beam size change means for changing the beam irradiation range that can be processed with one shot of beam irradiation for the workpiece is used,

a step of acquiring distribution information of chips to be processed distributed on the work;

a step of generating processing pattern information for each workpiece to be processed based on the distribution information of the processing target chips;

a step of sequentially processing a plurality of processing target chips distributed on the work based on the processing pattern information;

In the step of generating the processing pattern information, there is a step of searching for an area that can be processed in one shot with respect to a plurality of adjacent processing target chips.

According to these laser processing apparatuses and methods, even if a large number of processing target chips are non-uniformly distributed on a workpiece, integrated processing is performed where the processing target chips are densely distributed (that is, a plurality of processing target chips are adjacent in a state in which they are integrated) Therefore, it is possible to reduce the processing time.

According to these laser processing apparatuses and methods, even if a large number of processing target chips are non-uniformly distributed on a workpiece, rapid processing can be performed, and productivity is improved.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram which shows the whole structure of an example of the form which implements this invention.
It is a top view which shows an example of the workpiece|work handled in the form which implements this invention.
3 : is a top view which shows an example of integrated processing with respect to the workpiece|work W handled in the form which implements this invention.
It is a flowchart in an example of the form which implements this invention.
Fig. 5 is a schematic diagram showing an overall configuration of another example of a form for implementing the present invention.
Fig. 6 is a cross-sectional view showing an example of chip arrangement and a state of chip transfer in a form embodying the present invention.

EMBODIMENT OF THE INVENTION Below, the form for implementing this invention is demonstrated, using drawings.

In addition, in the following description, the three axes of the Cartesian coordinate system are referred to as X, Y, and Z, the horizontal direction is expressed as the X direction and the Y direction, and the direction perpendicular to the XY plane (that is, the direction of gravity) is expressed as the Z direction. . In addition, in the Z direction, the direction against gravity is expressed as up, and the direction in which gravity acts is expressed as down. In addition, the direction which rotates about the Z direction as a central axis is called the θ direction. In addition, the X direction may be expressed horizontally, the Y direction may be expressed vertically, and the XY direction may be expressed vertically and horizontally.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram which shows the whole structure of an example of the form which implements this invention. 1 is a schematic diagram of a laser processing apparatus 1 according to the present invention.

The laser processing apparatus 1 irradiates a laser beam B to the processing target chips Ck which are non-uniformly distributed among a plurality of chips Cn arranged in a matrix at a predetermined pitch in length and breadth on the workpiece W, it will be processed

Specifically, the workpiece holding unit H, the laser processing apparatus 1 includes a laser irradiation unit L, a relative movement unit 4 , a processing chip distribution information acquisition unit 5 , and a processing pattern information generation unit 6 . , a processing control unit 7 and the like.

The work holding part H holds the work W in a predetermined attitude|position.

Specifically, the work holding part H supports the work W while maintaining a horizontal state from the lower surface side. More specifically, the work holding part H is provided with a clamping mechanism, a negative pressure suction means, an electrostatic adhesion means, etc., and has a structure which can hold the lower surface, the outer edge, etc. of the work W.

The laser irradiation unit L, based on a control command from a processing control unit 7 which will be described in detail later, directs the laser beam B to a beam spot having a desired vertical and horizontal dimension at an energy density sufficient for processing the processing target chip Ck. (Ps) is appropriately set to irradiate the work W. Specifically, the laser irradiation unit L includes a laser oscillator 2 , a mirror 21 , a beam expander 22 , a beam size change unit 3 , an objective lens 25 , and the like. And each part of the laser irradiation part L is provided in the frame (not shown) of the laser processing apparatus 1 directly or via a connection metal member etc.

In addition, the laser beam B is the laser beam B1 emitted from the laser oscillator 2, the laser beam B2 that has passed through the beam expander 22, the aperture opening A, and the objective lens 25. Although it can be distinguished by the laser beam B3 that has passed, these are usually referred to as the laser beam B.

The laser oscillator 2 emits the laser beam B in the form of a pulse. Specifically, the laser oscillator 2 receives a trigger signal output from the processing control unit 7 and emits a pulsed laser beam B1. More specifically, the laser beam B has a circular or elliptical spot shape when paying attention to a cross-sectional direction orthogonal to the optical axis, and has an energy distribution of approximately Gaussian distribution (also referred to as a Gaussian beam profile). For example, as the laser oscillator 2, a green laser (wavelength 532 nm) using the second harmonic of a YAG laser (fundamental wavelength 1064 nm) can be exemplified.

The mirror 21 is to change the direction of the laser beam B1. In the configuration of FIG. 1 , the laser beam B1 emitted in the X direction is emitted while changing the direction downward.

The beam expander 22 converts (also referred to as enlargement) the laser beam B1 emitted from the laser oscillator 2 into a laser beam B2 having a desired spot diameter.

The beam size changing unit 3 changes the beam irradiation range Ps that can be processed by one shot of beam irradiation with respect to the work W.

Specifically, the beam size changing unit 3 allows only a part of the laser beam B2 to pass through and blocks the rest of the light, thereby changing the beam irradiation range Ps of the laser beam B3 irradiated to the work W to a predetermined value. It changes to the vertical and horizontal dimensions.

More specifically, the beam size changing unit 3 includes a light shielding plate capable of changing the vertical and horizontal dimensions of the opening A in the XY direction, and an actuator (not shown).

The light-shielding plate combines four rectangular metal plates to form a rectangular opening A and a light-shielding portion.

The actuator moves the light shielding plates disposed to face each other apart from the opening A in the X-direction or the Y-direction, and changes the opening A to a desired vertical and horizontal dimension.

Specifically, the actuator moves/stops the light shielding plate to a desired position based on a command from the processing control unit 7 to change the beam irradiation range Ps that can be processed in one shot with the laser beam B3. is configuring.

For example, when the beam irradiation range Ps that can be set by the beam size change unit 3 is within the range of 1 × 1 to 6 × 6 pieces of the processing target chip Ck, the oppositely arranged light blocking plates are vertically It is set as the structure in which the vertical and horizontal dimension of the opening part A is changed in stages by moving/stopping at a predetermined pitch in 6 steps in a direction and 6 steps in a horizontal direction.

The objective lens 25 projects the image of the light passing through the opening A formed by the light blocking plate of the beam size changing unit 3 onto the work W. As shown in FIG. The objective lens 25 is configured as a unit from, for example, a lens group having a reduced projection magnification of 10 times, 20 times, 50 times, and the like, and is provided in the revolver mechanism 26 .

The revolver mechanism 26 switches a plurality of objective lenses (ie, magnification), and changes the projection magnification and energy density of the laser beam B3. Specifically, the revolver mechanism 26 is configured to selectively switch the objective lens 25 to be used based on a command from the processing control unit 7 and change the projection magnification and energy density of the laser beam B3, have.

In addition, the laser irradiation part L is good also as a structure provided with the mirror 21, the beam expander 22, the attenuator, etc. (not shown) in the optical path of the laser beam B as needed.

The relative moving part 4 changes the irradiation position of the laser beam B3 with respect to the workpiece|work W. As shown in FIG. Specifically, in the direction (XY direction) orthogonal to the thickness direction (Z direction) of the work W, the relative position of the work W and the laser beam B3 is moved, and at the time of laser processing, the work It is to match (ie, align) the relative position and angle of one or more processing target chip|tip Ck in (W), and the beam irradiation range Ps. More specifically, the relative movement unit 4 includes an X-axis actuator 4x, a Y-axis actuator 4y, a θ-axis actuator 4θ, and the like.

The X-axis actuator 4x moves the work holding part H in the X direction at a predetermined speed, and stops it at a predetermined position. The Y-axis actuator 4y moves the work holding part H in the Y direction at a predetermined speed, and stops it at a predetermined position. The θ-axis actuator 4θ rotates the work holding part H at a predetermined angular velocity in the θ direction with the Z direction as the rotation axis, and stops it at a predetermined angle. The X-axis actuator 4x, the Y-axis actuator 4y, and the θ-axis actuator 4θ are driven and controlled based on a control signal output from the processing control unit 7 .

In addition, the alignment of the work W is a mechanical clamp method in which the outer periphery of the work W is clamped from the outside toward the inside, or a reference mark applied to the work W is imaged with a camera, or provided on the work W A software alignment method in which a notch or an orientation flat is imaged/detected with a camera/sensor, etc., the position or angle is grasped, and the feed pitch or angle during positioning movement is corrected and controlled with a computer, etc. can be exemplified.

The processed chip distribution information acquisition unit 5 acquires the distribution information J of the processing target chips Ck distributed on the work W.

Specifically, the processing chip distribution information acquisition unit 5 obtains the distribution information J of the processing target chip Ck, which differs for each workpiece W, from an upstream process device such as an inspection device, a workpiece transport device, a host computer, or the like. obtained through a communication line, etc. from

The distribution information J of the chips Ck to be processed includes which of a plurality of chips arranged in a matrix at a predetermined pitch in the vertical and horizontal directions on the workpiece W in the reference posture prescribed in advance for the workpiece W is the processing target. It indicates whether it is a chip (Ck).

Fig. 2 is a plan view showing an example of a work W dealt with in a form embodying the present invention. In Fig. 2, of the plurality of chips arranged in a matrix at a predetermined pitch in both vertical and horizontal directions on the work W, white squares are normal chips, and black squares are defective (processing target chip Ck).

For example, as shown in the figure, based on the posture in which the outer shape of the workpiece W is circular and the notch Wf (orientation flat) is directly below, the distribution of the chips Ck to be processed The information J is information (coordinate data, address) for discriminating (also referred to as discrimination or identification) where the object corresponding to the processing target chip Ck is based on the center of the workpiece W, the notch position, etc. value, flag information, etc.).

The processing pattern information generation unit 6 generates processing pattern information for each workpiece W of the processing target based on the distribution information J of the processing target chip Ck.

The processing pattern information includes the output of the laser beam B, the emission time of one shot of the laser beam B, the beam irradiation range Ps (in detail, the vertical and horizontal dimensions of the opening A and the objective lens 25 to be used. Projection magnification (also referred to as processing size), processing position and order, and the like, information about the sequential processing of the processing target chip Ck is included.

The processing pattern information generation unit 6 is provided with a batch processing area search unit that searches for an area that can be processed in one shot with respect to a plurality of adjacent processing target chips.

In the batch processing area search unit, for example, if the beam irradiation range Ps that can be set in the beam size change unit 3 is within the range of 1 × 1 vertical and horizontal 6 × 6 pieces of the processing target chip Ck, , The batch processing area search unit searches for an area that can be processed in one shot as follows.

3 : is a top view which shows an example of integrated processing with respect to the workpiece|work W handled in the form which implements this invention. In FIG. 3 , similarly to FIG. 2 , defective chips (chips to be processed Ck) are shown in black squares, and areas to be integrated are shown in broken lines.

First, an area that can be integrated into processing by 6 × 6 pieces of length and width of the chip Ck to be processed is searched, and the processing size and processing position are set. In addition, for the remaining processing target chips Ck, an area capable of integrally processing 6 × 6 pieces in length and width is searched, and the processing size and processing position are set. At this time, an area capable of integrated processing is searched for one processing target chip Ck so that irradiation of the laser beam B3 does not overlap.

Then, if there is no area that can be integrally processed to be 6 x 6 in length with respect to the remaining processing target chip Ck, an area that can be integrated into 6 x 5 in length and width is searched for.

And, in the same manner, vertical and horizontal 6x4 to 6x1, 5x6 to 5x1, 4x6 to 4x1, 3x6 to 3x1, 2x6 to 2x1, 1x6 to In the order of 1x2 pieces, an area that can be integrated is searched, and the processing size and processing position of each area are set as processing pattern information.

Then, the machining position is set as an area to be machined by 1 x 1 piece in length and width for the remainder.

More specifically, the processing chip distribution information acquisition unit 5 and the processing pattern information generation unit 6 to the batch processing area search unit are composed of a computer or the like (hardware) and an execution program (software) thereof, Based on the distribution information (J) of the chips (Ck) to be machined acquired for each target workpiece (W), an area capable of integrated machining is searched for, and a program is provided for generating machining pattern information in which the machining size and machining position are set are doing

The processing control unit 7 sequentially processes the plurality of processing target chips Ck distributed on the work W based on the processing pattern information generated by the processing pattern information generation unit 6 .

Specifically, the processing control unit 7 appropriately changes the size of the aperture of the beam size change unit 3 , while a plurality of beam irradiation ranges Ps of the laser beam B3 and the plurality of pieces distributed on the work W are provided. The processing target chip Ck is removed by relatively moving the relative moving part 4 and irradiating the laser beam B sequentially so that the processing target chip Ck (defective portion shown in black square in FIG. 3) overlaps. sequential processing.

Specifically, the processing control unit 7 has the following functions.

1) A function of transmitting a trigger signal for irradiating the laser beam B to the laser oscillator 2 in pulse form.

2) A function of outputting a control signal to the revolver mechanism 26 of the laser irradiation unit L and switching the magnification of the objective lens 25 .

3) A function of controlling the actuator of the beam size changing unit 3 and changing the vertical and horizontal dimensions of the opening A (that is, the beam irradiation range Ps that can be processed in one shot with the laser beam B3) .

4) Check the current position information of the X-axis actuator (4x), Y-axis actuator (4y), θ-axis actuator (4θ), etc., and X-axis actuator (4x), Y-axis actuator (4y), θ-axis actuator (4θ) ), a function to control the movement speed, position, angle, etc., and to align the workpiece (W) and correct the position and angle.

5) Based on the coordinate data etc. contained in the processing information J acquired by the processing information acquisition part 6, the relative movement part M is controlled, and the irradiation position of the some beam spot Ps with respect to the workpiece|work W. A function to relatively move in the XY direction or rotate in the θ direction.

That is, the processing control unit 7 outputs control signals and data to the laser oscillator 2, the beam size change unit 3, the relative movement unit 4, the revolver mechanism 26, etc., and controls each unit. . More specifically, the processing control unit 7 is composed of a computer, a programmable logic controller, a control controller, etc. (hardware), and an execution program (software) thereof, and can control each unit through a signal input/output means or data communication means. can

It is a flowchart in an example of the form which implements this invention. 3, the flow which laser-processes the workpiece|work W using the laser processing apparatus 1 which concerns on this invention is shown.

First, the work W is mounted on the work holding part H and held (step s10).

Next, distribution information J of the processing target chips Ck distributed on the workpiece W is acquired (step s11).

Next, an area capable of integrated processing is searched for, and processing pattern information is generated (step s12). Specifically, using the processing pattern information generation unit 6 thru the batch processing area search unit, as described above, an area capable of integrated processing is searched.

Then, the position of the light shielding plate of the beam size change unit 3 is moved in the XY direction, and the beam irradiation range Ps (for example, the length and width of the processing target chip Ck) that can be processed in one shot by beam irradiation 6x6 pieces) (step s13).

Then, if necessary, the workpiece W is aligned (step s14) and integrated in the beam irradiation range Ps (for example, 6 x 6 pieces in length and width of the chip Ck to be machined) according to the processing pattern information. The workpiece W is relatively moved/stopped to a position where it can be machined, and sequential machining is performed (step s15).

Next, it is determined whether there is a place to be machined as it is in the same beam irradiation range Ps (step s16). If there is, steps s14 to s16 are repeated to perform sequentially integrated machining.

On the other hand, if there is no part to be integrated with the same beam irradiation range (Ps) as it is, the size is changed to the next beam irradiation range (Ps) (for example, 6 × 5 pieces of the target chip (Ck) to be processed) and processed sequentially. is determined (step s18), and if there is, the position of the light shielding plate of the beam size change unit 3 in the XY direction is moved, and processing is sequentially performed. That is, steps s13 to s18 described above are repeated.

Then, when the size is changed to the following beam irradiation range Ps and there is no part to be sequentially processed (that is, when sequential processing for all the processing target chips Ck is finished), the workpiece holding part H is relative to the dispensing position. It is moved to release the holding of the work W, and the work W is delivered to the outside (step s20).

Because of such a configuration, according to the laser processing apparatus 1 and the laser processing method according to the present invention, even if the processing target chips are non-uniformly distributed among a plurality of chips arranged in a matrix at a predetermined pitch in both vertical and horizontal directions on the workpiece , it is possible to search for an area where the plurality of processing target chips can be integrated and processed. Therefore, even if a large number of processing target chips Ck are non-uniformly distributed on the workpiece W, rapid processing can be performed and productivity is improved.

[Variation]

In addition, in the above description, the beam size changing unit 3 moves/stops the opposing light shielding plates at a predetermined pitch in 6 steps in the vertical direction and 6 steps in the horizontal direction to change the vertical and horizontal dimensions of the opening A step by step, , a configuration in which the beam irradiation range Ps can be set within the range of 1 × 1 to 6 × 6 of the processing target chip Ck has been exemplified. However, the beam size changing unit 3 is not limited to such a configuration, and on the basis of the vertical and horizontal dimensions necessary for processing one chip to be processed, m vertical and n horizontal (however, m and n are positive). It may be a configuration in which the beam irradiation range (Ps) that can be integrated and processed in one shot can be changed by stepwise setting in one integrated block shape.

In addition, in the above description, as the light blocking plate of the beam size changing unit 3, four metal plates are combined to form a rectangular opening A and a light blocking portion, and the light blocking plate is moved in the X or Y direction to form the opening A An example of a configuration in which is changed to the desired vertical and horizontal dimensions is exemplified.

However, the light shielding plate of the beam size changing unit 3 is not limited to such a configuration, and two substantially L-shaped metal plates are alternately combined, and these are moved in the X direction or the Y direction, and the opening A is formed. The configuration may be changed to a desired vertical and horizontal dimension.

Further, in the above description, a plurality of objective lenses 25 are provided in the revolver mechanism 26 in the laser irradiation unit L, and the reduction projection magnification can be selectively switched based on the control signal output from the processing control unit 7 . possible configurations were shown.

However, this revolver mechanism 26 is not limited to the configuration switched by the control signal output from the processing control section 7, but a configuration switched by manual operation may be used. In addition, the revolver mechanism 26 in the laser irradiation section L is not essential, but a configuration in which the objective lens 25 used is replaced by replacement, or one type of objective lens 25 is fixed and used. configuration may be used. Alternatively, the laser irradiation unit L may have a configuration in which the projection magnification is changed by a zoom lens instead of the configuration including the plurality of objective lenses 25 and the revolver mechanism 26 .

In addition, in the above-mentioned, as the relative moving part 4, each part of the laser irradiation part L is installed directly or via a connecting metal member etc. to the frame (not shown) of the laser processing apparatus 1 (that is, fixed and ), the structure in which the workpiece holding part H moves in the XYθ direction was exemplified.

However, the relative movement unit 4 is not limited to such a configuration, and may have a configuration in which the work holding unit H is fixed and the laser irradiation unit L is moved in a part or all of the XYθ direction.

In addition, in the above description, as the collective processing area search unit of the processing pattern information generation unit 6, the vertical and horizontal 6x6 to 6x1, 5x6 to 5x1, ... of the processing target chip Ck. , 2x6 to 2x1, and 1x6 to 1x2, an area that can be integrated is searched for, and a configuration for setting the machining size and machining position has been exemplified.

However, the batch processing area search unit is not limited to such a procedure, and the vertical and horizontal standards are reversed, and the vertical and horizontal 6x6 to 1x6, 6x5 to 1x5, ... , 6x2 to 1x2, and 6x1 to 2x1 may be configured to search for an area that can be integrated into processing. Alternatively, a configuration in which a plurality of processing target chips Ck are located adjacent to each other vertically/horizontally, and in what combination they can be integrated and processed while changing the vertical and horizontal dimensions of the beam irradiation range Ps. may be

In the above description, as the laser oscillator 2, a green laser (wavelength 532 nm) using the second harmonic of the YAG laser was exemplified.

However, the laser oscillator 2 may use a YVO4 laser other than the YAG laser. In addition, as the laser oscillator 2, the workpiece W may be processed using a fundamental wave (wavelength of 1064 nm), not limited to processing by these second harmonics, and a UV laser (wavelength) using a third harmonic. 355 nm) or a deep ultraviolet laser (wavelength 266 nm) using the fourth harmonic may be used to process the workpiece W. In addition, as the laser oscillator 2, a laser outputting a different type or a different wavelength may be used, and what is necessary is just to select it according to the energy absorption characteristic of the chip|tip Ck to be processed.

[Other forms]

Further, in the above description, in the laser processing apparatus 1 and the laser processing method according to the present invention, a plurality of non-uniformly distributed processing among a plurality of chips Cn in a matrix form at a predetermined pitch in vertical and horizontal directions on a work W having a circular outer shape The form of irradiating and processing the laser beam B(B3) with respect to the target chip|tip Ck was illustrated.

However, in realizing the present invention, the workpiece W and the processing target chip Ck are not limited to the above-described shapes, and various shapes may be adapted. Specifically, the laser processing apparatus and method according to the present invention can be applied to the form of performing chip transfer from the donor substrate Wd to the target substrate Wt by irradiating the laser beam B.

Fig. 5 is a schematic diagram showing an overall configuration of an example of a form embodying the present invention. Fig. 2 shows a schematic diagram of a chip transfer apparatus 1B according to the present invention.

The chip transfer apparatus 1B makes the transfer object chip Cd disposed on the surface of the donor substrate Wd and the surface of the target substrate Wt face each other, and faces the transfer object chip Cd over the donor substrate Wd. By irradiating the laser beam B(B3), the transfer target chip Cd is transferred to the transfer target region Cx set on the surface of the target substrate Wt.

Specifically, the chip transfer apparatus 1B includes the laser processing apparatus 1 described above, and includes a donor substrate holder Hd and a target substrate holder Ht instead of the work holder H. , the relative moving unit 4B is provided instead of the relative moving unit 4 . Further, in the chip transfer apparatus 1B, the donor substrate Wd and the target substrate Wt correspond to the workpiece W to be processed by the laser processing apparatus 1, and are disposed on the surface of the donor substrate Wd. The transfer target chip Cd corresponds to the processing target chip Ck of the laser processing apparatus 1 .

The target substrate holding part 2t supports and holds the target substrate Wt in a predetermined posture. Specifically, the target substrate holding unit 2t supports the transfer target region Cx toward the upper surface side while maintaining the target substrate Wt horizontally from the lower surface side. More specifically, the target substrate holding part 2t is provided with a clamping mechanism, negative pressure suction means, electrostatic adhesion means, etc., and is configured to hold the lower surface, the outer edge, etc. of the target substrate Wt.

The donor substrate holder 2d supports and holds a predetermined portion of the donor substrate Wd so that the transfer target chip Cd disposed on the surface of the donor substrate Wd and the surface of the target substrate Wt face each other. will do Specifically, the donor substrate holding part 2d faces the transfer target chip Cd toward the lower surface side and holds the donor substrate Wd in a horizontal state while interposing the transfer ring Wc on the outer edge of the donor substrate Wd. It is to support and hold the part Wr.

The conveyance ring Wc is a member for supporting and holding|maintaining the outer edge part Wr (in the figure, the upper surface side) of the donor substrate Wd, and assisting conveyance and fixation. Specifically, the conveying ring Wc is constituted by an annular plate-shaped member, and the inner edge portion (lower surface side in the drawing) is closely fixed to the outer edge portion Wr of the donor substrate Wd by an adhesive layer or the like. .

More specifically, the donor substrate holding part 2d is provided with a clamping mechanism, a negative pressure suction means, an electrostatic adhesion means, etc. (not shown), and the carrying ring Wc which closely fixes the donor substrate Wd is provided. It is configured to hold the outer peripheral side or the outer edge.

Fig. 6 is a cross-sectional view showing an example of chip arrangement and a state of chip transfer in a form embodying the present invention. 6A and 6B, a transfer target chip Cd disposed on the front surface (lower surface side in the drawing) of the donor substrate Wd, and the surface (upper surface side in the drawing) of the target substrate Wt. A mode in which the donor substrate Wd is opposed to the target substrate Wt at a predetermined interval is shown so that the set transfer target region Cx faces each other. Moreover, the donor substrate Wd is held by the donor substrate holding part 2d via the conveyance ring Wc. In addition, the target substrate Wt is held by the target substrate holding part 2t.

At positions P1 to P5, the relationship between the opposing transcription target chip Cd and the transcription target site Cx is exemplified.

At the position P1, there is no normal chip Cn in the donor substrate Wd, and there is a normal chip Cn in the target substrate Wt. In such a case, since it is not necessary to perform chip transfer to the target substrate Wt, the transfer target chip Cn and the transfer target region Cx are not set.

At the positions P2 and P5, the normal chip Cn is present in the donor substrate Wd, and the normal chip Cn is missing in the target substrate Wt. In such a case, since it is necessary to perform chip transfer to the target substrate Wt, the normal chip Cn on the donor substrate Wd side is set as the transfer target chips Cd1 and Cd2, and the target substrate Wt ), transcription target sites (Cx1, Cx2) are set.

At the position P3, there is a normal chip Cn in the donor substrate Wd, and there is a normal chip Cn in the target substrate Wt as well. In such a case, since it is not necessary to perform chip transfer to the target substrate Wt, the transfer target chip Cn and the transfer target region Cx are not set.

At the position P4, there is no normal chip Cn in the donor substrate Wd, and the normal chip Cn is missing also in the target substrate Wt. In such a case, although it is necessary to perform chip transfer to the target substrate Wt, since there is no transfer target chip Cn, the transfer target site|part Cx is not set.

In addition, Fig. 6(a) shows a state in which a laser beam B(B3) is irradiated to the transfer target chip Cd1 to the transfer target region Cx1 at the position P2. have. On the other hand, in Fig. 6B, the transcription target chip Cd1 is transcribed into the transcription target site Cx1 at the position P2, and the transcription target chip Cd2 is transferred to the transcription target site Cx2 at the next position P5. The state in which the laser beam B(B3) is irradiated to the said chip|tip Cd2 in order to transfer is shown.

The relative movement unit 4B relatively moves the target substrate holding unit Ht, the donor substrate holding unit Hd, and the laser irradiation unit L.

Specifically, the relative movement unit 4B is disposed so that the target substrate Wt and the donor substrate Wd face each other in a predetermined positional relationship between the target substrate holding unit Ht and the donor substrate holding unit Hd. With respect to these substrates Wd and Wt, the irradiation position of the laser beam B3 emitted from the laser irradiation unit L is changed. And the relative movement part 4B is in the direction (XY direction) orthogonal to the thickness direction (Z direction) of the donor substrate Wd and the target substrate Wt, these board|substrates Wd, Wt, and the laser beam B3 ), and at the time of chip transfer (irradiation of the laser beam B3), one or more transfer target chips Cd set on these substrates Wd and Wt and the beam irradiation range Ps It has a structure in which a relative position and an angle are matched (that is, aligned). More specifically, the relative movement unit 4B includes a first X-axis actuator 41x, a first Y-axis actuator 41y, a second X-axis actuator 42x, a second Y-axis actuator 42y, and a θ-axis. An actuator 4θ or the like is provided.

The first X-axis actuator 41x moves the target substrate holder Ht and the donor substrate holder Hd in the X1 direction at a predetermined speed and stops them at a predetermined position.

Specifically, the first X-axis actuator 41x includes a rail having a predetermined length in the X1 direction provided on the device frame 10f, and moves on the rail at a predetermined speed or stops at a predetermined position. It consists of a slider that can be And the base plate 40 is provided in the said slider.

The first Y-axis actuator 41y moves the target substrate holding part Ht in the Y1 direction at a predetermined speed, and stops it at a predetermined position.

Specifically, the first Y-axis actuator 41y includes a rail having a predetermined length in the Y1 direction provided on the base plate 40, and moves on the rail at a predetermined speed or stops at a predetermined position. It consists of a slider that can be Then, the slider is provided with a θ-axis actuator 4θ.

The θ-axis actuator 4θ rotates the target substrate holding part Ht at a predetermined angular velocity in the θ direction with the Z direction as the rotation axis, or stops it at a predetermined angle.

The second X-axis actuator 42x moves the donor substrate holding portion Hd in the X2 direction at a predetermined speed and stops it at a predetermined position.

Specifically, the second X-axis actuator 42x includes a rail having a predetermined length in the X2 direction provided on the base plate 40, and moves on the rail at a predetermined speed or stops at a predetermined position. It consists of a slider that can be And the 2nd Y-axis actuator 42y is provided in the said slider.

The second Y-axis actuator 42y moves the donor substrate holding part Hd in the Y2 direction at a predetermined speed, and stops it at a predetermined position.

Specifically, the second Y-axis actuator 42y includes a rail having a predetermined length in the Y1 direction, and a slider capable of moving on the rail at a predetermined speed or stopping at a predetermined position. has been And the donor substrate holding part Hd is provided in the said slider.

The first X-axis actuator 41x, the first Y-axis actuator 41y, the θ-axis actuator 4θ, the second X-axis actuator 42x, and the second Y-axis actuator 42y are Driving is controlled based on the output control signal. Moreover, in the relative movement part 4B, the X1 direction and the X2 direction are comprised so that the X direction may correspond, and the Y1 direction and the Y2 direction are comprised so that the Y direction may correspond.

In addition, the alignment of the donor substrate Wd and the target substrate Wt is a mechanical clamp method in which the outer periphery of these substrates Wd and Wt is clamped from the outside toward the inside, and the reference provided to these substrates Wd and Wt. The mark is imaged with a camera, or the notch and orientation flat provided on these boards (Wd, Wt) are imaged/detected with a camera/sensor, etc. Or a software alignment method that corrects and controls the angle can be exemplified.

Since the relative moving part 4B has such a structure, it can relatively move the target substrate holding part Ht, the said donor substrate holding part Hd, and the laser irradiation part L, and furthermore, the donor substrate. The relative movement and alignment of Wd and the target substrate Wt, and the relative movement of these substrates Wd and Wt and the laser irradiation part L can be performed.

Then, in the chip transfer apparatus 1B, the processed chip distribution information acquisition unit 5 holds the donor substrate Wd and the target substrate Wt in opposing states in order to transfer the transfer target chip Cd. , a configuration for acquiring distribution information J of the transfer target chip Cd disposed on the surface of the donor substrate Wd that can be transferred to the transfer target site Cx set on the surface of the target substrate Wt are doing

Further, in the chip transfer apparatus 1B, the processing pattern information generation unit 6 generates processing pattern information for each target substrate Wt based on the distribution information J acquired by the processing chip distribution information acquisition unit 5 . I am making a configuration that

In addition, in the chip transfer apparatus 1B, the processing control unit 7 controls the relative movement unit 4B based on the processing pattern information generated by the processing pattern information generation unit 6, over the donor substrate Wd. The laser beam B3 is sequentially irradiated toward the transfer target chip Cd.

Because of the above configuration, according to the chip transfer apparatus 1B and the chip transfer method according to the present invention, the transfer target chip Cd among the plurality of chips arranged in a matrix at a predetermined vertical and horizontal pitch on the donor substrate Wd. Even if a large number of these are non-uniformly distributed, it is possible to search for an area in which the chip can be transferred collectively, and the chip transfer can be performed collectively. Therefore, even if a large number of transfer target chips Cd to be transferred from the donor substrate Wd to the target substrate Wt are non-uniformly distributed, rapid chip transfer can be performed, and productivity is improved.

1: laser processing equipment
2: laser oscillator
3: Beam size change unit
4: Relative moving part
5: Machining chip distribution information acquisition unit
6: processing pattern information generation unit
7: processing control
21 : mirror
22, 23 : Lens (beam expander)
25: objective lens
26: revolver mechanism
W: work
Cn: chip (normal)
Ck: Chip to be processed (bad chip)
H: Work holding part
L: laser irradiation part
B(B1, B2, B3) : laser beam
Ps: beam irradiation range
A: opening
J: Distribution information of chips to be processed
1B: chip transfer device
40: base plate
41x: 1st X-axis actuator
41y: first Y-axis actuator
42x: 2nd X-axis actuator
42y: 2nd Y-axis actuator
4θ : θ axis actuator
Hd: donor substrate holding part
Ht: target substrate holding part
Wd: donor substrate
Wt: target substrate
Cd: Transcription target chip
Cx: transcription target site

Claims (5)

A laser processing apparatus for processing by irradiating a laser beam to a plurality of non-uniformly distributed processing target chips among a plurality of chips arranged in a matrix at a predetermined pitch in vertical and horizontal directions on a workpiece, the laser processing apparatus comprising:
a laser oscillator emitting the laser beam;
a relative movement unit for changing the irradiation position of the laser beam with respect to the work;
A beam size changing unit for changing a beam irradiation range that can be processed with one shot of beam irradiation for the work;
a machined chip distribution information acquisition unit for obtaining distribution information of the machining target chips distributed on the work;
a processing pattern information generating unit that generates processing pattern information for each workpiece to be processed based on the distribution information of the processing target chip;
a processing control unit for sequentially processing the plurality of processing target chips distributed on the workpiece based on the processing pattern information;
The processing pattern information generation unit,
With respect to a plurality of adjacent chips to be processed, a batch processing area search unit for searching for an area that can be processed in one shot;
Laser processing apparatus, characterized in that. According to claim 1,
In the beam size change unit, the beam irradiation range is m vertical and n horizontal (where m and n are positive integers) based on the vertical and horizontal dimensions required for processing of one chip to be processed. It is set up step by step into one integrated block consisting of a combination,
The batch processing site search unit,
Based on the combination information of the m vertical and n horizontal pieces that can be set in the beam size changing unit, and the distribution information of the chip to be processed, an area that can be integrated into one shot is searched for
Laser processing apparatus, characterized in that. Including the laser processing apparatus according to claim 1 or 2,
The work is
a donor substrate on which a transfer target chip is disposed;
and a target substrate on which a transfer target region to which the transfer target chip is transferred is set;
a target substrate holding unit supporting and holding the target substrate in a predetermined posture;
a donor substrate holding unit for supporting and holding a predetermined portion of the donor substrate so that the transfer target chip disposed on the surface of the donor substrate and the surface of the target substrate face each other;
the processing target chip is the transfer target chip, which is transferred from the donor substrate to the target substrate by irradiation of the laser beam;
A chip transfer apparatus characterized in that the laser beam is irradiated toward the transfer target chip over the donor substrate, and the transfer target chip is transferred to the transfer target site set on the surface of the target substrate. A laser processing method for processing by irradiating a laser beam to a plurality of non-uniformly distributed processing target chips among a plurality of chips arranged in a matrix at a predetermined pitch in vertical and horizontal directions on a workpiece,
a laser oscillator emitting the laser beam;
Relative movement means for changing the irradiation position of the laser beam with respect to the work;
Using a beam size changing means for changing the beam irradiation range that can be processed with one shot of beam irradiation for the work,
acquiring distribution information of the chips to be processed distributed on the work;
generating processing pattern information for each workpiece to be processed based on the distribution information of the processing target chips;
a step of sequentially processing the plurality of processing target chips distributed on the workpiece based on the processing pattern information;
The step of generating the processing pattern information includes a step of searching for an area that can be processed in one shot with respect to a plurality of adjacent processing target chips. Including the laser processing method according to claim 4,
The work is
a donor substrate on which a transfer target chip is disposed;
and a target substrate on which a transfer target region to which the transfer target chip is transferred is set;
a step of supporting and holding the target substrate in a predetermined posture;
a step of supporting and holding a predetermined portion of the donor substrate so that the transfer target chip disposed on the surface of the donor substrate and the surface of the target substrate face each other;
the processing target chip is the transfer target chip, which is transferred from the donor substrate to the target substrate by irradiation of the laser beam;
In the step of sequentially processing the processing target chip, the laser beam is irradiated toward the transfer target chip over the donor substrate, and the transfer target chip is transferred to the transfer target site set on the surface of the target substrate.
Chip transfer method, characterized in that.

Images