KR20220015984A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The invention provides a substrate processing apparatus and a substrate processing method which can easily confirm the opening state of a bubble supply pipe. A substrate processing apparatus (100B) is provided with a processing tank (110), a bubble supply tube (180A), a gas supply tube (261A), a physical quantity detection unit (253A), and a determination unit (12). The processing tank (110) holds the processing liquid (LQ) and immerses the substrate (W). The bubble supply pipe (180A) has a plurality of openings (G) for supplying gas into the processing liquid (LQ) to form bubbles. The gas supply pipe (261A) supplies gas to the bubble supply pipe (180A). The physical quantity detection unit (253A) detects, through the gas supply pipe (261A), a physical quantity caused by the state of the bubble supply pipe (180A). The determination unit (12) determines the state of the plurality of openings (G) on the basis of the physical quantity.

Description

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

The present invention relates to a substrate processing apparatus and a substrate processing method.

It is known that the board|substrate used for electronic components, such as a semiconductor device and a liquid crystal display device, is processed by a substrate processing apparatus. The substrate is processed by being immersed in a processing liquid in a processing tank (for example, refer to Patent Document 1).

With the miniaturization and three-dimensionalization of elements formed on a semiconductor substrate in recent years, a request for uniform processing of the substrate is increasing. For example, a NAND device having a three-dimensional structure has a stacked structure having a three-dimensional uneven structure. When the processing liquid stays in the concave portion of the concave-convex structure of the element pattern, liquid replacement in the concave portion becomes insufficient. Therefore, as a means for sufficiently promoting liquid replacement for the entire substrate including the concave portion, a bubble generator (bubble supply pipe) is disposed below the substrate immersed in the treatment tank, and bubbles are generated from the bubble generator to replace the liquid in the treatment tank. There are technologies that promote

Patent Document 1 describes an application example of such a bubble generator. In the substrate processing apparatus of patent document 1, when a board|substrate is immersed in the processing tank which stored the phosphoric acid aqueous solution and a board|substrate is processed, in the processing tank, foam|bubble is generated from the bubble generator arrange|positioned below the immersed board|substrate. A bubble generator is normal and has many discharge ports (multiple openings). A gas supply pipe for supplying mixed gas to the bubble generator is connected to one end of the bubble generator. And the bubble generator generates bubbles of the mixed gas in the phosphoric acid aqueous solution by blowing the mixed gas into the phosphoric acid aqueous solution from each discharge port.

The generated bubble circulates phosphoric acid aqueous solution, raising the clearance gap between the some board|substrate mounted in a processing tank, and a board|substrate. This circulation promotes liquid replacement around the device pattern formed on the substrate.

Japanese Laid-Open Patent Publication No. 2018-56258

As a result of the phosphoric acid treatment of the substrate, the components eluted in the aqueous phosphoric acid solution may also precipitate in the bubble generator.

In a state in which the eluted component is deposited on the discharge port of the bubble generator, so-called clogging occurs, and there is a possibility that the granular shape, distribution, and rising speed of the supplied bubbles may fluctuate. As a result, there is a possibility of affecting the uniformity of the substrate processing. Accordingly, the aqueous phosphoric acid solution was periodically discharged from the treatment tank, and the state of the opening was visually confirmed. As a result, it took a lot of effort to confirm the state of the opening.

This invention was made in view of the said subject, and an object of this invention is to provide the substrate processing apparatus and substrate processing method which can confirm the state of the opening of a bubble supply pipe|tube easily.

According to one aspect of the present invention, a substrate processing apparatus includes a processing tank, a bubble supply pipe, a gas supply pipe, a physical quantity detection unit, and a determination unit. The processing tank stores the processing liquid to immerse the substrate. The bubble supply pipe has a plurality of openings for supplying gas as bubbles in the processing liquid. The gas supply pipe supplies the gas to the bubble supply pipe. The physical quantity detection unit detects a physical quantity resulting from the state of the bubble supply pipe through the gas supply pipe. The determination unit determines the states of the plurality of openings based on the physical quantity.

In the substrate processing apparatus of the present invention, the determination unit compares a reference physical quantity that is the physical quantity detected at a first time with a detected physical quantity that is the physical quantity detected at a second time, and determines the state of the plurality of openings; It is preferable that the said 1st time and the said 2nd time are different.

In the substrate processing apparatus of the present invention, the first time period indicates a time before processing the substrate, the second time period indicates a time after processing the substrate, and the determination unit includes: the reference physical quantity and the detection unit It is preferable to determine whether the states of the plurality of openings are abnormal based on the difference between the physical quantities.

Preferably, in the substrate processing apparatus of the present invention, the physical quantity detecting unit includes a pressure gauge for detecting a pressure in the gas supply pipe, and the physical quantity indicates the pressure in the gas supply pipe.

The substrate processing apparatus of the present invention further includes a flow rate control unit configured to supply the gas at a first flow rate to the gas supply pipe when processing the substrate, wherein the determination unit includes the gas at a second flow rate to the gas supply pipe It is preferable that the state of the said some opening is judged based on the pressure in the said gas supply pipe at the time of supplying, and the said 2nd flow volume is more than the said 1st flow volume.

It is preferable that, in the substrate processing apparatus of the present invention, the physical quantity detecting unit includes a regulating valve for controlling a flow rate of the gas supplied to the gas supply pipe, and the physical quantity indicates an opening degree of the regulating valve.

In the substrate processing apparatus of the present invention, when the regulating valve processes the substrate, the gas at a first flow rate is supplied to the gas supply pipe, and the determination unit supplies the gas at the first flow rate to the gas supply pipe. It is preferable to determine the state of the said some opening based on the said opening degree at the time of supplying.

In the substrate processing apparatus of the present invention, the physical quantity detection unit includes a pressure gauge for detecting a pressure in the gas supply pipe, and a control valve for controlling a flow rate of the gas supplied to the gas supply pipe, wherein the physical quantity is the gas supply pipe the pressure in the regulating valve and the opening degree of the regulating valve are shown, wherein the regulating valve supplies the gas at a first flow rate to the gas supply pipe when processing the substrate, and the determining unit includes the first flow rate to the gas supply pipe. In the gas supply pipe when the state of the plurality of openings is determined based on the opening degree when the gas of It is preferable to determine the state of the plurality of openings based on the pressure.

According to another aspect of the present invention, a substrate processing method is a substrate processing method for processing a substrate with a processing liquid, wherein a gas is supplied to a bubble supply pipe having a plurality of openings through a gas supply pipe, and the gas is used as bubbles as the processing liquid It includes a step of supplying to the inside, a step of detecting a physical quantity resulting from the state of the bubble supply pipe through the gas supply pipe, and a step of determining the state of the plurality of openings based on the physical quantity.

In the substrate processing method of the present invention, in the step of determining the state, a reference physical quantity that is the physical quantity detected at a first time is compared with a detected physical quantity that is the physical quantity detected at a second time, and The state is determined, and it is preferable that the first time and the second time are different.

In the substrate processing method of the present invention, the first time period is before processing the substrate, the second time period is after processing the substrate, and in the step of determining the state, It is preferable to determine whether the state of the plurality of openings is abnormal based on the difference between the reference physical quantity and the detected physical quantity.

In the substrate processing method of the present invention, it is preferable that the physical quantity represents the pressure in the gas supply pipe.

In the substrate processing method of the present invention, in the step of supplying the gas, when the substrate is processed, the gas at a first flow rate is supplied to the gas supply pipe, and when the states of the plurality of openings are determined, the It is preferable that the said gas of a 2nd flow volume is supplied to a gas supply pipe|tube, and that the said 2nd flow volume is more than the said 1st flow volume.

Preferably, in the substrate processing method of the present invention, in the step of supplying the gas, a flow rate of the gas supplied to the gas supply pipe is controlled using a control valve, and the physical quantity indicates an opening degree of the control valve. .

In the substrate processing method of the present invention, in the step of supplying the gas, when the substrate is processed, the gas at a first flow rate is supplied to the gas supply pipe, and when the states of the plurality of openings are determined, the It is preferable to supply the gas at the first flow rate to the gas supply pipe.

In the substrate processing method of the present invention, the physical quantity represents the pressure in the gas supply pipe and the opening degree of the regulating valve, and in the step of determining the state, when the gas at a first flow rate is supplied to the gas supply pipe The state of the plurality of openings is determined based on the opening degree, and based on the pressure in the gas supply pipe when the gas at a second flow rate greater than the first flow rate is supplied to the gas supply pipe, It is desirable to establish the state of the opening.

ADVANTAGE OF THE INVENTION According to this invention, the state of the opening of a bubble supply pipe|tube can be confirmed easily.

FIG. 1A is a diagram showing a state before the substrate according to Embodiment 1 of the present invention is immersed in a processing liquid. (b) is a diagram showing a state in which the substrate according to the first embodiment is immersed in a processing liquid.
2 is a schematic diagram showing a substrate processing apparatus according to the first embodiment.
3 is a diagram illustrating a state in which the substrate processing apparatus according to the first embodiment is executing a determination process.
4 is a graph showing the relationship between the flow rate of gas supplied to the bubble supply pipe according to the first embodiment and the difference between the reference pressure and the detected pressure.
5 is a graph showing the relationship between the flow rate of gas supplied to the bubble supply pipe according to the first embodiment and the difference between the reference pressure and the detected pressure.
6 is a flowchart showing a substrate processing method according to the first embodiment.
7 is a diagram illustrating a substrate processing apparatus according to the first embodiment.
8 is a schematic plan view illustrating a plurality of circulating processing liquid supply members and a plurality of bubble supply pipes according to the first embodiment.
9 is a diagram illustrating a state in which the substrate processing apparatus according to the first embodiment is executing a determination process.
10 is a diagram showing a state in which the substrate processing apparatus according to the second embodiment of the present invention is executing a determination process.
11 is a graph showing the relationship between the flow rate of gas supplied to the bubble supply pipe according to the second embodiment and the absolute difference between the reference opening degree and the detection opening degree.
12 is a flowchart showing a substrate processing method according to the second embodiment.
13 is a flowchart showing a substrate processing method according to a third embodiment of the present invention.
14 is a flowchart showing a substrate processing method according to a third embodiment.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described, referring drawings. In the drawings, the same reference numerals are assigned to the same or equivalent parts, and descriptions are not repeated. Further, in an embodiment of the present invention, the X axis, the Y axis, and the Z axis are orthogonal to each other, the X axis and the Y axis are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.

<Embodiment 1>

A substrate processing apparatus 100A and a substrate processing method according to Embodiment 1 of the present invention will be described with reference to FIG. 1 . First, with reference to FIG. 1, the substrate processing apparatus 100A is demonstrated. 1 is a schematic perspective view of a substrate processing apparatus 100A. Specifically, FIGS. 1A and 1B are schematic perspective views of the substrate processing apparatus 100A before and after the substrate W is put into the processing tank 110 .

1A and 1B , the substrate processing apparatus 100A collectively processes the plurality of substrates W with the processing liquid LQ. In addition, the substrate processing apparatus 100A may process the many board|substrates W at a predetermined number with the processing liquid LQ. The predetermined number is an integer of 1 or more.

The substrate W is in the shape of a thin plate. Typically, the board|substrate W is a thin substantially disk shape. The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a magneto-optical disk It includes a substrate for use, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, and the like.

The plurality of substrates W are subjected to at least one of etching treatment, surface treatment, characterization, treatment film formation, removal of at least a part of the film, and cleaning by the treatment liquid LQ. For example, the substrate processing apparatus 100A performs the etching process of _a silicon oxide film (SiO2 film) and a silicon nitride film (SiN film) with respect to the pattern formation side surface of the board|substrate W which consists of a silicon substrate. In such an etching process, any one of a silicon oxide film and a silicon nitride film is removed from the surface of the board|substrate W.

The treatment liquid LQ is, for example, a chemical liquid. The treatment liquid LQ is, for example, a mixture of phosphoric acid (H ₃ PO ₄ ), ammonia, aqueous hydrogen peroxide, and water, or tetramethylammonium hydroxide. For example, as the treatment liquid LQ, a solution at approximately 157° C. in which approximately 89 mass% of phosphoric acid (H ₃ PO ₄ ) and approximately 11 mass% of water (deionized water) are mixed (hereinafter referred to as “phosphoric acid solution”) ) is used, the silicon nitride film (SiN film) is removed from the surface of the substrate W. In other words, as the treatment liquid LQ, a solution containing no impurities and having a high temperature and high acid concentration is used, and the treatment liquid LQ dissolves silicon (Si ⁴⁺ ). In addition, the kind of processing liquid LQ is not specifically limited as long as the board|substrate W can be processed. Moreover, the temperature of the processing liquid LQ is not specifically limited, either.

Specifically, the substrate processing apparatus 100A includes a processing tank 110 and a substrate holding unit 120 .

The processing tank 110 stores the processing liquid LQ. Specifically, the processing tank 110 stores the processing liquid LQ. Specifically, the treatment tank 110 has a double tank structure including the inner tank 112 and the outer tank 114 . The inner tub 112 and the outer tub 114 each have an upper opening open upward. The inner tank 112 stores the processing liquid LQ and is configured to accommodate the plurality of substrates W. The outer tub 114 is formed on the outer peripheral surface of the upper opening of the inner tub 112 .

The board|substrate holding part 120 holds the some board|substrate W. The plurality of substrates W are arranged in a line along the first direction D10 (Y direction). In other words, the first direction D10 represents the arrangement direction of the plurality of substrates W. The first direction D10 is substantially parallel to the horizontal direction. Moreover, each of the some board|substrates W is substantially parallel to the 2nd direction D20. The second direction D20 is substantially orthogonal to the first direction D10 and is substantially parallel to the horizontal direction.

Specifically, the substrate holding unit 120 includes a lifter. The board|substrate holding part 120 moves vertically upward or vertically downward in the state hold|maintaining the some board|substrate W. When the substrate holding unit 120 moves vertically downward, the plurality of substrates W held by the substrate holding unit 120 are immersed in the processing liquid LQ stored in the inner tank 112 .

In FIG. 1A , the substrate holding part 120 is located above the inner tank 112 of the processing tank 110 . The board|substrate holding|maintenance part 120 descend|falls vertically downward (Z direction), hold|maintaining the some board|substrate W. Thereby, the some board|substrate W is injected|thrown-in to the processing tank 110 .

As shown in FIG. 1B , when the substrate holding unit 120 descends to the processing tank 110 , the plurality of substrates W are immersed in the processing liquid LQ in the processing tank 110 . In the first embodiment, the substrate holding unit 120 immerses the plurality of substrates W aligned at a predetermined interval in the processing liquid LQ stored in the processing tank 110 .

In detail, the board|substrate holding part 120 further includes the main body plate 122 and the holding rod 124. As shown in FIG. The body plate 122 is a plate extending in the vertical direction (Z direction). The holding rod 124 extends from one main surface of the main body plate 122 in the horizontal direction (Y direction). In the example of FIG.1(a) and FIG.1(b), the three holding rods 124 extend in the horizontal direction from one main surface of the main body plate 122. As shown in FIG. In a state in which the plurality of substrates W are aligned at a predetermined interval, the lower edges of the respective substrates W abut against each other by the plurality of holding rods 124 and are maintained in the standing posture (vertical posture).

The substrate holding unit 120 may further include a lifting unit 126 . The lifting unit 126 includes a processing position (position shown in FIG. 1(b) ) in which a plurality of substrates W held by the substrate holding unit 120 are located in the inner tank 112 , and the substrate holding unit 120 . ), the main body plate 122 is raised and lowered between the retracted positions (positions shown in FIG. Accordingly, when the main body plate 122 is moved to the processing position by the lifting unit 126 , the plurality of substrates W held by the holding rod 124 are immersed in the processing liquid LQ.

Then, with reference to FIG. 2, the bubble supply pipe 180A and the gas supply part 200 are demonstrated. FIG. 2 is a schematic diagram showing a substrate processing apparatus 100A according to the first embodiment. In addition, FIG. 2 is a figure which shows the state in which the substrate processing apparatus 100A is performing a substrate process. The substrate processing is processing the substrate W with the processing liquid LQ. In addition, the open valve is shown in white, and the closed valve is shown in black.

As shown in FIG. 2 , the substrate processing apparatus 100A further includes at least one bubble supply pipe 180A and a gas supply unit 200 .

The gas supply unit 200 supplies the gas supplied from the gas supply source 263 to the bubble supply pipe 180A through the gas supply pipe 261A. The gas supplied by the gas supply unit 200 to the bubble supply pipe 180A is, for example, an inert gas. The inert gas is, for example, nitrogen (N ₂ ) or argon (Ar).

Specifically, the gas supply unit 200 includes a supply mechanism 251A and a gas supply pipe 261A. The supply mechanism 251A includes a valve 211A, a flow meter 217A, and a control valve 219A. The valve 211A, the flow meter 217A, and the regulating valve 219A are arranged in the gas supply pipe 261A from the downstream to the upstream of the gas supply pipe 261A in this order.

The control valve 219A adjusts the opening degree (hereinafter, referred to as "opening degree OAn") to adjust the flow rate of the gas supplied to the bubble supply pipe 180A. "Flow rate" represents, for example, the flow rate that passes through a unit area per unit time. Specifically, the control valve 219A includes a valve body (not shown) having a valve seat formed therein, a valve body for opening and closing the valve seat, and an actuator (not shown) for moving the valve body between an open position and a closed position. not included).

The flow meter 217A measures the flow rate of the gas flowing through the gas supply pipe 261A. The adjustment valve 219A adjusts the flow rate of the gas based on the measurement result of the flow meter 217A. In addition, for example, 219A of regulating valves may be a regulating valve of a mass flow controller.

The valve 211A opens and closes the gas supply pipe 261A. That is, the valve 211A switches the supply of the gas from the gas supply pipe 261A to the bubble supply pipe 180A and the supply stop.

Subsequently, the bubble supply pipe 180A is demonstrated. The bubble supply pipe 180A generates a plurality of bubbles (a large number of bubbles) in the processing liquid LQ, and supplies a plurality of bubbles (a large number of bubbles) toward the plurality of substrates W immersed in the processing liquid LQ. supply The bubble supply pipe 180A is a bubbler, for example.

The bubble supply pipe 180A has a substantially cylindrical shape. The bubble supply pipe 180A is, for example, a pipe. The bubble supply pipe 180A is extended in the 1st direction D10.

The bubble supply pipe 180A has the 1st end 180a and the 2nd end 180b. The first end 180a is one end of the both ends of the bubble supply pipe 180A in the first direction D10. The second end portion 180b is the other end of the both ends of the bubble supply pipe 180A in the first direction D10.

A gas supply pipe 261A is connected to the first end 180a. Specifically, the bubble supply pipe 180A is freely attachable and detachable to the gas supply pipe 261A. The first end 180a is closed except for the portion to which the gas supply pipe 261A is connected. The second end 180b is closed.

Specifically, the bubble supply pipe 180A further has a flow path FW0. Gas flows through the flow path FW0. The flow path FW0 is formed along the 1st direction D10 inside 180A of bubble supply pipe|tube. The flow path FW0 has an open end and communicates with the gas supply pipe 261A. The other end of the flow path FW0 has a closed structure.

Moreover, 180A of bubble supply pipe|tube further has several bubble supply hole G which communicates with the flow path FW0. The bubble supply hole G is an example of an opening. The bubble supply hole G is circular, for example. The pore diameter of the bubble supply hole G is, for example, on the order of several tens of micrometers - several hundreds of micrometers. Moreover, the number of the bubble supply holes G formed in 180 A of one bubble supply pipe|tube is 40 pieces or 60 pieces, for example.

In the bubble supply pipe 180A, the some bubble supply hole G is arrange|positioned on a substantially straight line at predetermined intervals in the 1st direction D10. In the bubble supply pipe 180A, each bubble supply hole G is formed in the upper surface part of 180 A of bubble supply pipes. In addition, as long as a bubble can be supplied from the bubble supply hole G, the position of the bubble supply hole G is not specifically limited. Moreover, in 180A of bubble supply pipe|tube, several bubble supply hole G may be arrange|positioned at equal intervals, and may be arrange|positioned at unequal intervals.

The material of the bubble supply pipe 180A is, for example, quartz or a synthetic resin. The synthetic resin is, for example, PFA (tetrafluoroethylene-perfluoroalkylvinyl ether copolymer) or PTFE (polytetrafluoroethylene) from the point of having acid resistance.

In particular, if the material of 180A of bubble supply pipe|tube is a synthetic resin, processing of 180 A of bubble supply pipe|tube is easy. Moreover, if the material of 180A of bubble supply pipe|tube is PFA, a bending process is easy. For example, it is also possible to process 180A of bubble supply pipe|tube into an L shape. Therefore, the number of joints between the bubble supply pipe 180A and other pipes can be reduced. As a result, durability of the bubble supply pipe 180A can be improved.

The bubble supply pipe 180A is arrange|positioned inside the processing tank 110. In detail, 180A of bubble supply pipe|tube is arrange|positioned at the bottom of the treatment tank 110 in the inside of the treatment tank 110 . Specifically, the bubble supply pipe 180A is disposed in the inner tank 112 of the treatment tank 110 . In detail, 180A of bubble supply pipe|tube is arrange|positioned at the bottom of the inner tank 112 in the inside of the inner tank 112. More specifically, when processing the substrate W, the bubble supply pipe 180A is disposed at a position of a predetermined depth HA in the processing liquid LQ. The predetermined depth HA represents the distance from the liquid level of the processing liquid LQ to the bubble supply hole G. The bubble supply pipe 180A is fixed to the bottom of the inner tank 112 . The bubble supply pipe 180A may contact the bottom part of the inner tank 112, and may be spaced apart with respect to the bottom part of the inner tank 112.

Next, the control device U4 will be described. The substrate processing apparatus 100A further includes a control apparatus U4 .

The control device U4 controls each configuration of the substrate processing apparatus 100A. For example, the control device U4 controls the substrate holding unit 120 and the gas supply unit 200 .

The control device U4 is, for example, a computer. In detail, the control device U4 includes the control unit 10 and the storage device 20 .

The storage device 20 stores data and computer programs. The storage device 20 includes, for example, a main storage device and an auxiliary storage device. The main memory device includes, for example, a semiconductor memory. Auxiliary storage devices include, for example, semiconductor memories, solid state drives, and/or hard disk drives.

The control unit 10 includes, for example, a processor such as a CPU (Central Processing Unit). Specifically, the control unit 10 includes a flow rate control unit 11 .

When processing the substrate W, the flow control unit 11 supplies the gas at the first flow rate F1 to the gas supply pipe 261A by controlling the gas supply unit 200 . Specifically, the flow control unit 11 adjusts the opening degree OAn of the regulating valve 219A based on the flow rate measured by the flow meter 217A, and supplies the gas at the first flow rate F1 to the gas supply pipe 261A. . The first flow rate F1 is a flow rate for processing the substrate W. Accordingly, the gas of the first flow rate F1 is supplied to the bubble supply pipe 180A through the gas supply pipe 261A. As a result, a plurality of bubbles are supplied from the plurality of bubble supply holes G of the bubble supply pipe 180A in the processing liquid LQ.

Next, with reference to FIG. 3, the pressure gauge 253A is demonstrated. 3 : is a figure which shows the state in which the substrate processing apparatus 100A is performing the determination process. A determination process determines the state of 180A of bubble supply pipe|tube. In the first embodiment, the plurality of substrates W are pulled up from the processing liquid LQ of the processing tank 110 .

3 , the substrate processing apparatus 100A further includes a pressure gauge 253A. The pressure gauge 253A is an example of a physical quantity detection unit.

The pressure gauge 253A detects a physical quantity through the gas supply pipe 261A. The physical quantity is a quantity resulting from the state of the bubble supply pipe 180A. In Embodiment 1, the pressure gauge 253A detects the pressure in the gas supply pipe 261A. In Embodiment 1, the physical quantity represents the pressure in the gas supply pipe 261A. The pressure gauge 253A is connected between the valve 211A and the flow meter 217A. As a result, when the valve 211A is open, the pressure indicates the pressure in the bubble supply pipe 180A.

When determining the state of the bubble supply pipe 180A, the flow control part 11 supplies the gas of the 2nd flow volume F2 to the gas supply pipe 261A by controlling the gas supply part 200. Specifically, the flow control unit 11 adjusts the opening degree OAn of the regulating valve 219A based on the flow rate measured by the flow meter 217A, and supplies the gas at the second flow rate F2 to the gas supply pipe 261A. . The second flow rate F2 is larger than the first flow rate F1. The second flow rate F2 is a flow rate for determining the state of the bubble supply pipe 180A. It is preferable that the 2nd flow volume F2 is 2 times or more and 10 times or less of the 1st flow volume F1, for example. Accordingly, the gas of the second flow rate F2 is supplied to the bubble supply pipe 180A through the gas supply pipe 261A. As a result, a plurality of bubbles are supplied from the plurality of bubble supply holes G of the bubble supply pipe 180A in the processing liquid LQ.

In the substrate processing apparatus 100A, the control unit 10 further includes a determination unit 12 .

The determination unit 12 determines the state of the plurality of bubble supply holes G based on the pressure detected by the pressure gauge 253A (hereinafter, referred to as "pressure PAn"). Specifically, the determination unit 12 determines the state of the plurality of bubble supply holes G based on the pressure PAn. n is 1 or 2. In detail, the determination part 12 compares the pressure PA1 detected at the 1st time t1, and the pressure PA2 detected at the 2nd time t2, and determines the state of the some bubble supply hole G. The pressure PA1 is an example of a reference physical quantity. The pressure PA1 represents the pressure (henceforth "reference pressure PA1" may be described) detected at the 1st time t1. The pressure PA2 is an example of a detected physical quantity. The pressure PA2 represents the pressure (henceforth "detected pressure PA2" may be described) detected at the 2nd time t2. The first time t1 and the second time t2 are different. Specifically, the first time t1 represents the time before the substrate W is processed. For example, 1st time t1 shows when the state of several bubble supply hole G is an initial state. The initial state shows the state of the some bubble supply hole G immediately after attaching 180A of bubble supply pipes or 180A of bubble supply pipes. For example, in the initial state, the plurality of bubble supply holes G are not substantially affected by the processing liquid LQ, and the plurality of bubble supply holes G in the bubble supply pipe 180A when not in use. has been substantially maintained. The second time t2 represents the time after the substrate W is processed. For example, the second time t2 represents a time after processing the substrate W is performed a plurality of times, and the second time t2 is determined experimentally or empirically. The reference pressure PA1 is stored in the storage device 20 .

Here, with reference to FIG.4 and FIG.5, the state of the some bubble supply hole G, and the relationship between pressure PAn are demonstrated. 4 and 5 are graphs showing the relationship between the flow rate of the gas supplied to the bubble supply pipe 180A and the difference ΔPA between the reference pressure PA1 and the detection pressure PA2. 4 and 5 , the horizontal axis represents the flow rate of the gas supplied to the bubble supply pipe 180A, and the vertical axis represents the difference ΔPA between the reference pressure PA1 and the detection pressure PA2. Reference pressure PA1 represents a pressure when the bubble supply pipe 180A having 60 bubble supply holes G with a pore diameter of 260 µm is disposed in the substrate processing apparatus 100A. The bubble supply pipe 180A having 60 bubble supply holes G with a pore diameter of 260 µm represents the bubble supply pipe 180A in an initial state (normal state).

In FIG. 4 , the detection pressure PA21 is the detection pressure when the bubble supply pipe 180A in which 5 bubble supply holes G of the 60 bubble supply holes G are blocked is disposed in the substrate processing apparatus 100A. indicates The difference ΔPA21 represents the difference between the reference pressure PA1 and the detection pressure PA21. In addition, instead of the bubble supply pipe 180A in which the five bubble supply holes G are blocked, a small amount of a component (for example, silica (Si)) is added to the periphery of the 60 bubble supply holes G. You may use the bubble supply pipe 180A which precipitated.

In addition, detection pressure PA22 shows the detection pressure at the time of arrange|positioning in the substrate processing apparatus 100A of the bubble supply pipe|tube 180A in which the 10 bubble supply holes G of 60 bubble supply holes G were blocked|occluded. The difference ΔPA22 represents the difference between the reference pressure PA1 and the detection pressure PA22. In addition, instead of the bubble supply pipe 180A in which the 10 bubble supply holes G are blocked, a large amount of components (eg, silica (Si)) is added to the peripheral portion of the 60 bubble supply holes G. You may use the bubble supply pipe 180A which precipitated.

As shown in FIG. 4 , the difference ΔPA22 was larger than the difference ΔPA21. Therefore, the determination part 12 can determine the state of the some bubble supply hole G based on pressure PAn. As a result, it is not necessary to visually confirm the bubble supply pipe 180A. Therefore, the state of the some bubble supply hole G can be confirmed easily.

In addition, the difference ΔPA21 and the difference ΔPA22 became larger as the flow rate was increased. Therefore, by making the 2nd flow volume F2 more than the 1st flow volume F1, even if the change of the state of the some bubble supply hole G is small, difference (DELTA)PA becomes large. As a result, the state of the some bubble supply hole G can be confirmed accurately.

In addition, in FIG. 5 , detection pressure PA23 represents a detection pressure when the bubble supply pipe 180A having 60 bubble supply holes G with a pore diameter of 300 µm is disposed in the substrate processing apparatus 100A. In other words, the bubble supply pipe 180A having 60 bubble supply holes G with a pore diameter of 300 µm represents the bubble supply pipe 180A in which the size of the 60 bubble supply holes G is widened. In other words, the bubble supply pipe 180A having 60 bubble supply holes G with a pore diameter of 300 µm represents a bubble supply pipe 180A in which peripheral portions of the 60 bubble supply holes G are eluted into the treatment liquid LQ. . The difference ΔPA23 represents the difference between the reference pressure PA1 and the detection pressure PA23.

As shown in FIG. 5 , the difference ΔPA23 became smaller as the flow rate was increased. Therefore, the determination part 12 can determine the state of the some bubble supply hole G based on pressure PAn. As a result, it is not necessary to visually confirm the bubble supply pipe 180A. Therefore, the state of the some bubble supply hole G can be confirmed easily.

In addition, the difference ΔPA23 became smaller as the flow rate was increased. Therefore, by making the 2nd flow volume F2 more than the 1st flow volume F1, even if the change of the state of the some bubble supply hole G is small, the absolute value of difference (DELTA)PA becomes large. As a result, the state of the some bubble supply hole G can be confirmed accurately.

In detail, the determination part 12 determines whether the state of the some bubble supply hole G is abnormal based on the difference ΔPA of the reference pressure PA1 and the detection pressure PA2. Specifically, when the difference ΔPA is equal to or greater than the first threshold value TH1, the determination unit 12 determines that the plurality of bubble supply holes G are abnormal. 1st threshold value TH1 represents the numerical value at the time of the some bubble supply hole G becoming small or blocked|occluded, and the state of the some bubble supply hole G being abnormal. Moreover, when the difference ΔPA is equal to or less than the second threshold value TH2, the determination unit 12 determines that the plurality of bubble supply holes G are abnormal. 2nd threshold value TH2 shows the numerical value at the time of the some bubble supply hole G becoming large or wide, and the state of the some bubble supply hole G is abnormal. Moreover, when difference (DELTA)PA is 2nd threshold value TH2 or more and less than 1st threshold value TH1, the determination part 12 determines that the state of some bubble supply hole G is normal.

As mentioned above, as demonstrated with reference to FIGS. 1-5, according to Embodiment 1, the determination part 12 determines the state of the some bubble supply hole G based on pressure PAn. As a result, it is not necessary to visually confirm the bubble supply pipe 180A. Therefore, the state of the some bubble supply hole G can be confirmed easily. Moreover, the state of the some bubble supply hole G can be confirmed without individual difference.

Moreover, the determination part 12 compares the reference pressure P1 detected at the 1st time t1, and the detection pressure P2 detected at the 2nd time t2, and determines the state of the some bubble supply hole G. As a result, the change from the state of the some bubble supply hole G in the 1st time t1 to 2nd time t2 can be confirmed.

In addition, the 1st time t1 shows the time before processing the board|substrate W. As a result, the change from the bubble supply pipe 180 of an initial state (new article) can be confirmed.

Here, as shown in FIGS. 2 and 3 , the substrate processing apparatus 100A further includes a drain unit 170 . The drainage unit 170 discharges the processing liquid LQ of the processing tank 110 .

Specifically, the drain unit 170 includes a drain pipe 170a and a valve 170b. And a drain pipe 170a is connected to the bottom wall of the inner tank 112 of the treatment tank 110 . A valve 170b is disposed in the drain pipe 170a. When the valve 170b is opened, the processing liquid LQ stored in the inner tank 112 is discharged to the outside through the drain pipe 170a. The discharged treatment liquid LQ is transferred to a drainage treatment device (not shown) and treated. In detail, before the state of the plurality of bubble supply holes G is determined, the valve 170b is opened, so that a part of the processing liquid LQ stored in the inner tank 112 is passed through the drain pipe 170a. discharged to the outside As a result, the bubble supply pipe 180A is arrange|positioned at the position of the predetermined depth HB in the process liquid LQ. The predetermined depth HB represents the distance from the liquid level of the processing liquid LQ to the bubble supply hole G. The predetermined depth HB may be lower than the predetermined depth HA, and may be zero. Therefore, in the determination processing, the influence of the processing liquid LQ can be suppressed and the state of the plurality of bubble supply holes G can be confirmed with high accuracy.

In addition, the substrate processing apparatus 100A further includes a cleaning liquid supply unit 190 . The cleaning liquid supply unit 190 includes a pipe 190a , a valve 190b , and a cleaning liquid supply source 190c . A valve 190b is disposed in the pipe 190a. The cleaning liquid from the cleaning liquid supply source 190c is supplied to the pipe 190a. As the washing liquid, for example, hydrofluoric acid (HF) can be employed. When the valve 190b is opened, the cleaning liquid is supplied into the inner tank 112 . As a result, after the judgment process, a component (eg, silica (Si)) precipitated on the periphery of the bubble supply hole G, and silica (Si) and water (H ₂ O) produced by the reaction Silicon oxide (SiO ₂ ) can be dissolved. Therefore, the state of the some bubble supply hole G is recoverable.

Next, with reference to FIG. 6, the substrate processing method which concerns on Embodiment 1 of this invention is demonstrated. 6 is a flowchart showing a substrate processing method according to the first embodiment. As shown in FIG. 6 , the substrate processing method includes steps S1 to S14. The substrate processing method is executed by the substrate processing apparatus 100A.

First, in step S1 , under the control of the controller U4 , the substrate holding unit 120 immerses the plurality of substrates W in the processing liquid LQ of the processing tank 110 .

Next, in step S2 , the flow control unit 11 adjusts the opening degree OAn of the regulating valve 219A based on the flow rate measured by the flow meter 217A, and sends the first flow rate F1 to the bubble supply pipe 180A. supply gas.

Next, in process S3, after processing the some board|substrate W, the flow control part 11 closes valve 211A and stops supplying gas to 180A of bubble supply pipes.

Next, in step S4 , the substrate holding unit 120 picks up the plurality of substrates W from the processing liquid LQ in the processing tank 110 under the control of the control device U4 .

Next, in step S5 , when the valve 170b is opened for a predetermined period, a part of the processing liquid LQ stored in the inner tank 112 is discharged to the outside through the drain pipe 170a. The predetermined period represents a period for changing from the predetermined depth HA to the predetermined depth HB.

Next, in step S6, the flow control unit 11 adjusts the opening degree OAn of the regulating valve 219A based on the flow rate measured by the flow meter 217A, and transmits the second flow rate F2 to the bubble supply pipe 180A. supply gas.

Next, in step S7 , the pressure gauge 253A detects the detection pressure PA2 through the gas supply pipe 261A.

Next, in step S8 , the flow control unit 11 closes the valve 211A to stop supplying the gas to the bubble supply pipe 180A.

Next, in step S9, the determination unit 12 determines to which range the difference ΔPA between the reference pressure PA1 and the detection pressure PA2 belongs.

In step S9, when the difference ΔPA between the reference pressure PA1 and the detection pressure PA2 is equal to or greater than the second threshold value TH2 and less than the first threshold value TH1, the determination unit 12 determines that the state of the plurality of bubble supply holes G is normal. and the substrate processing method is finished.

Moreover, in step S9, when the difference ΔPA between the reference pressure PA1 and the detected pressure PA2 is equal to or greater than the first threshold value TH1, the determination unit 12 has an abnormal state of the plurality of bubble supply holes G (a plurality of bubble supply holes). ball (G) is blocked), and the processing proceeds to step S10.

In step S10 , when the valve 170b is opened for a predetermined period, the processing liquid LQ stored in the inner tank 112 is discharged to the outside through the drain pipe 170a. The predetermined period represents a period during which the processing liquid LQ disappears from the inner tank 112 .

Next, in step S11 , when the valve 190b is opened, the cleaning liquid is supplied into the inner tank 112 .

Next, in step S12 , when the valve 170b is opened, the cleaning liquid stored in the inner tank 112 is discharged to the outside through the drain pipe 170a. Then, the substrate processing method ends.

On the other hand, in step S9, when the difference ΔPA between the reference pressure PA1 and the detection pressure PA2 is equal to or less than the second threshold value TH2, the determination unit 12 determines that the state of the plurality of bubble supply holes G is abnormal (the plurality of bubble supply holes). ball (G) is widened), and the processing proceeds to step S13.

In step S13 , when the valve 170b is opened, the processing liquid LQ stored in the inner tank 112 is discharged to the outside through the drain pipe 170a.

Next, in step S14, the bubble supply pipe 180A is replaced with a new bubble supply pipe 180A. Then, the substrate processing method ends.

As mentioned above, as demonstrated with reference to FIG. 6, according to Embodiment 1, the determination part 12 is based on the difference ΔPA between the reference pressure PA1 and the detection pressure PA2, and the state of the plurality of bubble supply holes G is abnormal. Determine whether or not Specifically, when the difference ΔPA between the reference pressure PA1 and the detection pressure PA2 is equal to or greater than the first threshold value TH1, the plurality of bubble supply holes G of the bubble supply pipe 180A can be washed. On the other hand, when the difference ΔPA between the reference pressure PA1 and the detection pressure PA2 is equal to or less than the second threshold value TH2, the bubble supply pipe 180A is replaced with a new bubble supply pipe 180A. As a result, the state of the some bubble supply hole G is recoverable suitably.

Then, with reference to FIG. 7, the substrate processing apparatus 100A is demonstrated in detail. 7 : is a figure which shows the substrate processing apparatus 100A.

The substrate processing apparatus 100A further includes a plurality of circulating processing liquid supply members 130 and a circulation unit 140 .

The circulation unit 140 circulates the processing liquid LQ stored in the processing tank 110 and supplies the processing liquid LQ to each of the circulating processing liquid supply members 130 in substrate processing.

The circulation unit 140 includes a pipe 141 , a pump 142 , a heater 143 , a filter 144 , a control valve 145 , and a valve 146 . The pump 142 , the heater 143 , the filter 144 , the regulating valve 145 , and the valve 146 are arranged from the upstream to the downstream of the pipe 141 in this order.

The pipe 141 guides the treatment liquid LQ discharged from the treatment tank 110 to the treatment tank 110 again. A plurality of circulating processing liquid supply members 130 are connected to the downstream end of the pipe 141 .

The pump 142 transfers the processing liquid LQ from the pipe 141 to the plurality of circulating processing liquid supply members 130 . Accordingly, the circulating processing liquid supply member 130 supplies the processing liquid LQ supplied from the pipe 141 to the processing tank 110 . The heater 143 heats the processing liquid LQ flowing through the pipe 141 . The temperature of the processing liquid LQ is adjusted by the heater 143 . The filter 144 filters the processing liquid LQ flowing through the pipe 141 .

The adjustment valve 145 adjusts the opening degree of the pipe 141 to adjust the flow rate of the processing liquid LQ supplied to the plurality of circulating processing liquid supply members 130 . Specifically, the control valve 145 includes a valve body (not shown) having a valve seat formed therein, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between an open position and a closed position (not shown). not included). The valve 146 opens and closes the pipe 141 .

The plurality of circulating treatment liquid supply members 130 supply the treatment liquid LQ to the inner tank 112 of the treatment tank 110 . The plurality of circulating processing liquid supply members 130 are disposed inside the inner tank 112 of the treatment tank 110 at the bottom of the inner tank 112 . Each of the plurality of circulating processing liquid supply members 130 has a substantially cylindrical shape. Each of the plurality of circulating processing liquid supply members 130 is, for example, a pipe.

Specifically, each of the plurality of circulating processing liquid supply members 130 has a plurality of processing liquid discharge holes P. In FIG. 7 , only one treatment liquid discharge hole P is shown for one circulating treatment liquid supply member 130 . Each of the plurality of circulating processing liquid supply members 130 supplies the processing liquid LQ to the inner tank 112 from the plurality of processing liquid discharge holes P.

The substrate processing apparatus 100A further includes a processing liquid supply unit 150 and a dilution liquid supply unit 160 .

The processing liquid supply unit 150 supplies the processing liquid LQ to the processing tank 110 . As the treatment liquid LQ, for example, a solution in which approximately 85% by mass of phosphoric acid (H ₃ PO ₄ ) and approximately 15% by mass of water (deionized water) are mixed can be employed.

The processing liquid supply unit 150 includes a nozzle 152 , a pipe 154 , and a valve 156 . The nozzle 152 discharges the processing liquid LQ to the inner tank 112 . The nozzle 152 is connected to the pipe 154 . The processing liquid LQ from the processing liquid supply source TKA is supplied to the pipe 154 . A valve 156 is disposed in the pipe 154 .

When the valve 156 is opened, the processing liquid LQ discharged from the nozzle 152 is supplied into the inner tank 112 .

The dilution liquid supply unit 160 supplies the dilution liquid to the treatment tank 110 .

The diluent supply unit 160 includes a nozzle 162 , a pipe 164 , and a valve 166 . The nozzle 162 discharges the dilution liquid to the outer tank 114 . The nozzle 162 is connected to the pipe 164 . As the diluent supplied to the pipe 164, any one of DIW (deionized water), carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water having a dilution concentration (eg, about 10 ppm to 100 ppm) can be employed. . The dilution liquid from the dilution liquid supply source TKB is supplied to the piping 164 . A valve 166 is disposed in the pipe 164 . When the valve 166 is opened, the diluent discharged from the nozzle 162 is supplied into the outer tank 114 .

In addition, the treatment tank 110 further includes a cover 116 . The lid 116 is openable and openable with respect to the upper opening of the inner shell 112 . When the lid 116 is closed, the lid 116 can block the upper opening of the inner tub 112 .

The lid 116 includes a door portion 116a and a door portion 116b. The door part 116a is located in one side among the upper openings of the inner tank 112. As shown in FIG. The door part 116a is arrange|positioned near the upper edge of the inner shell 112, and can open and close with respect to the upper opening of the inner shell 112. The door portion 116b is located on the other side of the upper opening of the inner tank 112 . The door part 116b is arrange|positioned near the upper edge of the inner shell 112, and can open and close with respect to the upper opening of the inner shell 112. By closing the door part 116a and the door part 116b to cover the upper opening of the inner tank 112, the inner tank 112 of the processing tank 110 can be blocked|occluded. In addition, the cover 116 may have an exhaust mechanism (not shown).

Then, with reference to FIGS. 7 and 8, the some bubble supply pipe|tube 180 and the gas supply part 200 are demonstrated. 8 is a schematic plan view illustrating a plurality of circulating processing liquid supply members 130 and a plurality of bubble supply pipes 180 .

As shown in FIG. 8 , the substrate processing apparatus 100A includes a gas supply unit 280A. Specifically, the gas supply unit 280A includes at least one bubble supply pipe 180 and at least one support member 185 . More specifically, the gas supply unit 280A includes a plurality of bubble supply pipes 180 and a plurality of support members 185 .

The some bubble supply pipe|tube 180 and the some support member 185 are arrange|positioned inside the processing tank 110 . In detail, the some bubble supply pipe|tube 180 is arrange|positioned in the bottom part 110a of the processing tank 110 in the inside of the processing tank 110. As shown in FIG. Specifically, the plurality of bubble supply pipes 180 are disposed in the inner tank 112 of the treatment tank 110 . In detail, the some bubble supply pipe|tube 180 is arrange|positioned in the bottom part 110a of the inner tank 112 in the inside of the inner tank 112.

Each of the plurality of bubble supply pipes 180 is supported by a corresponding support member 185 . Specifically, each of the plurality of bubble supply pipes 180 is fixed to the corresponding support member 185 . Therefore, the deformation|transformation of the bubble supply pipe|tube 180 can be suppressed. The plurality of support members 185 are fixed to the bottom portion 110a of the treatment tank 110 . Specifically, the plurality of support members 185 are fixed to the bottom portion 110a of the inner tank 112 . Therefore, when processing the board|substrate W, each of the some bubble supply pipe|tube 180 is arrange|positioned at the position of the predetermined depth HA in the processing liquid LQ.

In detail, the circulating processing liquid supply member 130 and the bubble supply pipe 180 are arranged substantially parallel to each other and spaced apart from each other in a plan view. In a plan view, one of the two circulating treatment liquid supply members 130 is disposed between the two bubble supply pipes 180 . Moreover, in a plan view, the other of the two circulating processing liquid supply members 130 is disposed between the other two bubble supply pipes 180 . Moreover, planar view WHEREIN: Among the four bubble supply pipes 180, the center two bubble supply pipe|tube 180 is opposing in the 2nd direction D20.

Specifically, in the treatment tank 110 (specifically, the inner tank 112), the some bubble supply pipe|tube 180 is mutually substantially parallel, and is arrange|positioned at intervals in the 2nd direction D20. The bubble supply pipe 180 is extended in the 1st direction D10. In each of the some bubble supply pipe|tube 180, the some bubble supply hole G is spaced|intervaled in the 1st direction D10, and is arrange|positioned on a substantially straight line. In each of the some bubble supply pipe|tube 180, each bubble supply hole G is formed in the upper surface part of the bubble supply pipe|tube 180. As shown in FIG. And each bubble supply hole G supplies a bubble upward in the bottom part of the processing tank 110 (specifically, the inner tank 112).

In addition, in the treatment tank 110 (specifically, the inner tank 112 ), the plurality of circulating treatment liquid supply members 130 are disposed substantially parallel to each other and spaced apart from each other in the second direction D20 . . The circulation processing liquid supply member 130 extends in the first direction D10 . In each of the plurality of circulating processing liquid supply members 130 , the plurality of processing liquid discharge holes P are disposed on a substantially straight line at intervals in the first direction D10 . In each of the plurality of circulating processing liquid supply members 130 , each processing liquid discharge hole P is formed in the upper surface of the circulating processing liquid supply member 130 . Then, each treatment liquid discharge hole P discharges the treatment liquid LQ upward in the bottom of the treatment tank 110 (specifically, the inner tank 112 ). In addition, although the processing liquid discharge hole P faces diagonally upward in FIG. 7, it is not limited to this, The processing liquid discharge hole P may face downward or a side.

Subsequently, with reference to FIG. 8 and FIG. 9, the gas supply part 200 is demonstrated. 9 is a diagram illustrating a state in which the substrate processing apparatus 100A is executing a determination process. 8 and 9 , the gas supply unit 200 supplies gas for generating bubbles to each of the plurality of bubble supply pipes 180 , and processes each of the plurality of bubble supply pipes 180 . A plurality of bubbles are supplied toward the plurality of substrates W immersed in the liquid LQ. Specifically, the gas supply unit 200 includes a gas supply pipe 260 .

For example, the gas supply pipe 260 includes a common pipe 262 and a plurality of gas supply pipes 261 . The plurality of gas supply pipes 261 include a gas supply pipe 261A, a gas supply pipe 261B, a gas supply pipe 261C, and a gas supply pipe 261D.

The common pipe 262 is connected to the gas supply source 263 . Specifically, the upstream end of the common pipe 262 is connected to the gas supply source 263 . The gas supply source 263 supplies gas to the common pipe 262 . The common pipe 262 is connected to an upstream end of each gas supply pipe 261 .

The downstream end of the gas supply pipe 261A is connected to the bubble supply pipe 180A. The downstream end of the gas supply pipe 261B is connected to the bubble supply pipe 180B. The downstream end of the gas supply pipe 261C is connected to the bubble supply pipe 180C. The downstream end of the gas supply pipe 261D is connected to the bubble supply pipe 180D. In this example, gas is supplied to each bubble supply pipe 180 from the common pipe 262 through each gas supply pipe 261.

8 and 9, the logical configuration of the gas supply pipe 260 is shown. Therefore, the connection form of the gas supply pipe|tube 260 and each bubble supply pipe|tube 180 is not specifically limited as long as gas can be supplied to each bubble supply pipe|tube 180 from the gas supply pipe|tube 260. 8 and 9 may show the physical configuration of the gas supply pipe 260 .

The gas supply unit 200 further includes a gas supply mechanism 250 . The gas supply mechanism 250 supplies gas to each bubble supply pipe 180 via the gas supply pipe 260 . Specifically, the gas supply mechanism 250 includes a common supply mechanism 252 and a plurality of supply mechanisms 251 . The plurality of supply mechanisms 251 include a supply mechanism 251A, a supply mechanism 251B, a supply mechanism 251C, and a supply mechanism 251D.

The common supply mechanism 252 includes a pressure gauge 252c, a regulator 252b, and a valve 252a. The pressure gauge 252c , the regulator 252b , and the valve 252a are arranged in the common pipe 262 from the downstream to the upstream of the common pipe 262 in this order. The pressure gauge 252c detects the pressure in the common pipe 262 . The pressure gauge 252c is connected between the gas supply pipe 261 and the regulator 252b. When the valve 252a is opened, gas is supplied from the gas supply source 263 to the common pipe 262 .

The supply mechanism 251A supplies the gas supplied from the gas supply source 263 to the bubble supply pipe 180A through the gas supply pipe 261A. Specifically, the supply mechanism 251A further includes a filter 212A in addition to the valve 211A, the flow meter 217A, and the adjustment valve 219A. The filter 212A filters the gas flowing through the gas supply pipe 261A.

The supply mechanism 251B supplies the gas supplied from the gas supply source 263 to the bubble supply pipe 180B via the gas supply pipe 261B. The supply mechanism 251C supplies the gas supplied from the gas supply source 263 to the bubble supply pipe 180C through the gas supply pipe 261C. The supply mechanism 251D supplies the gas supplied from the gas supply source 263 to the bubble supply pipe 180D through the gas supply pipe 261D. Each configuration of the supply mechanism 251B, the supply mechanism 251C, and the supply mechanism 251D is the same as that of the supply mechanism 251A.

The substrate processing apparatus 100A illustrated in FIG. 9 further includes a plurality of pressure gauges 253 . Each of the plurality of pressure gauges 253 is an example of a physical quantity detection unit. The plurality of pressure gauges 253 include a pressure gauge 253A, a pressure gauge 253B, a pressure gauge 253C, and a pressure gauge 253D.

The pressure gauge 253A detects the pressure in the gas supply pipe 261A. The pressure gauge 253B detects the pressure in the gas supply pipe 261B. The pressure gauge 253C detects the pressure in the gas supply pipe 261C. The pressure gauge 253D detects the pressure in the gas supply pipe 261D. Each of the pressure in the gas supply pipe 261A, the pressure in the gas supply pipe 261B, the pressure in the gas supply pipe 261C, and the pressure in the gas supply pipe 261D is an example of a physical quantity.

The substrate processing apparatus 100A further includes a plurality of exhaust mechanisms 300 . Each of the plurality of exhaust mechanisms 300 discharges gas to the outside. Specifically, each of the plurality of exhaust mechanisms 300 includes an exhaust pipe and a valve. A valve is disposed in the exhaust pipe. The valve opens and closes the exhaust pipe. One end of the exhaust pipe is connected to a gas supply pipe 261 . When the valve is opened, the gas from the gas supply pipe 261 is discharged to the outside through the exhaust pipe.

As described above with reference to FIG. 9 , according to the first embodiment, the determination unit 12 determines the respective states of the plurality of bubble supply pipes 180 based on the pressures detected by the plurality of pressure gauges 253 . You can determine whether it is strange or not. Specifically, the determination unit 12 can determine whether the state of the bubble supply pipe 180A is abnormal. The determination part 12 can determine whether the state of the bubble supply pipe 180B is abnormal. The determination part 12 can determine whether the state of 180 C of bubble supply pipes is abnormal. The determination unit 12 can determine whether the state of the bubble supply pipe 180D is abnormal.

<Embodiment 2>

With reference to FIG. 10, the substrate processing apparatus 100B which concerns on Embodiment 2 of this invention is demonstrated. 10 : is a figure which shows the state in which the substrate processing apparatus 100B is performing the determination process. Embodiment 2 is mainly similar to Embodiment 1 in that the substrate processing apparatus 100B according to Embodiment 2 determines the state of the plurality of bubble supply holes G based on the opening degree OAn of the adjustment valve 219A. different Hereinafter, the point in which Embodiment 2 differs from Embodiment 1 is mainly demonstrated.

In Embodiment 2, the adjustment valve 219A is an example of a physical quantity detection part. The control valve 219A controls the flow rate of the gas supplied to the gas supply pipe 261A. The regulating valve 219A outputs information indicating the opening degree OAn of the regulating valve 219A to the control device U4 . The opening degree OAn of the regulating valve 219A is an example of a physical quantity.

When determining the state of the bubble supply pipe 180A, the flow control part 11 supplies the gas of the 1st flow volume F1 to the gas supply pipe 261A by controlling the gas supply part 200. FIG. Specifically, the flow control unit 11 adjusts the opening degree OAn of the regulating valve 219A based on the flow rate measured by the flow meter 217A, and supplies the gas at the first flow rate F1 to the gas supply pipe 261A. . Accordingly, the gas of the first flow rate F1 is supplied to the bubble supply pipe 180A through the gas supply pipe 261A. As a result, a plurality of bubbles are supplied from the plurality of bubble supply holes G of the bubble supply pipe 180A in the processing liquid LQ.

The determination part 12 determines the state of the some bubble supply hole G based on the opening degree OAn output from 219A of regulating valves. n is 1 or 2. In detail, the determination part 12 compares the opening degree OA1 detected at the 1st time t1, and the opening degree OA2 detected at the 2nd time t2, and determines the state of the some bubble supply hole G. The opening degree OA1 is an example of a reference physical quantity. The opening degree OA1 represents the opening degree detected at the 1st time t1 (Hereinafter, it may describe as "standard opening degree OA1"). The opening degree OA2 is an example of a detected physical quantity. The opening degree OA2 shows the opening degree detected at the 2nd time t2 (Hereinafter, it may describe as "detected opening degree OA2"). The reference opening degree OA1 is stored in the storage device 20 .

Here, with reference to FIG. 11, the state of the some bubble supply hole G and the relationship between opening degree OAn are demonstrated. 11 is a graph showing the relationship between the flow rate of the gas supplied to the bubble supply pipe 180A and the absolute difference ΔOA between the reference opening degree OA1 and the detection opening degree OA2. 11 , the horizontal axis represents the flow rate of the gas supplied to the bubble supply pipe 180A, and the vertical axis represents the absolute difference ΔOA between the standard opening degree OA1 and the detection opening degree OA2. The reference opening degree OA1 shows the opening degree when the bubble supply pipe 180A which has 60 bubble supply holes G with a pore diameter of 260 micrometers is arrange|positioned in the substrate processing apparatus 100B. In other words, the bubble supply pipe 180A having 60 bubble supply holes G with a pore diameter of 260 µm represents the bubble supply pipe 180A in an initial state (normal state).

In FIG. 11 , the detection opening degree OA21 is the detection opening degree when the bubble supply pipe 180A in which 5 bubble supply holes G of the 60 bubble supply holes G are blocked is arrange|positioned in the substrate processing apparatus 100B. indicates The absolute difference ΔOA21 represents the absolute difference between the reference opening degree OA1 and the detection opening degree OA21.

Moreover, detection opening degree OA22 shows the opening degree at the time of arrange|positioning in the substrate processing apparatus 100B of the bubble supply pipe|tube 180A in which 10 bubble supply holes G of 60 bubble supply holes G were blocked|occluded. The absolute difference ΔOA22 represents the absolute difference between the reference opening degree OA1 and the detection opening degree OA22.

In addition, detection opening degree OA23 shows the opening degree at the time of arrange|positioning in the substrate processing apparatus 100B the bubble supply pipe|tube 180A which has 60 bubble supply holes G with a pore diameter of 300 micrometers. The absolute difference ΔOA23 represents the absolute difference between the reference opening degree OA1 and the detection opening degree OA23.

11 , the absolute difference ΔOA22 was larger than the absolute difference ΔOA21. Therefore, the determination part 12 can determine the state of the some bubble supply hole G based on opening degree OAn. As a result, it is not necessary to visually confirm the bubble supply pipe 180A. Therefore, the state of the some bubble supply hole G can be confirmed easily.

Moreover, the absolute difference ΔOA21, the absolute difference ΔOA22, and the absolute difference ΔOA23 became larger as the flow rate was decreased. Therefore, at the 1st flow volume F1, even if the change of the state of the some bubble supply hole G is small, absolute difference (DELTA)OA becomes large. As a result, the substrate processing and the judgment processing can be executed simultaneously.

In detail, the determination part 12 determines whether the state of the some bubble supply hole G is abnormal based on the absolute difference ΔOA between the reference opening degree OA1 and the detection opening degree OA2. Specifically, when the absolute difference ΔOA is equal to or greater than the threshold value TH, the determination unit 12 determines that the state of the plurality of bubble supply holes G is abnormal. Threshold value TH represents the numerical value when the several bubble supply hole G becomes small, clogged, enlarges, or spreads, and the state of the several bubble supply hole G is abnormal. Moreover, when absolute difference (DELTA)OA is less than threshold value TH, the determination part 12 determines with the state of some bubble supply hole G being normal.

Next, with reference to FIG. 12, the substrate processing method which concerns on Embodiment 2 of this invention is demonstrated. 12 is a flowchart showing a substrate processing method according to the second embodiment. 12 , the substrate processing method includes steps S101 to S107. The substrate processing method is executed by the substrate processing apparatus 100B.

First, in step S101 , under the control of the control device U4 , the substrate holding unit 120 immerses the plurality of substrates W in the processing liquid LQ of the processing tank 110 .

Next, in step S102, the flow control unit 11 adjusts the opening degree OAn of the regulating valve 219A to the detection opening degree OA2 based on the flow rate measured by the flow meter 217A, and is discharged to the bubble supply pipe 180A. 1 Supply gas with a flow rate of F1.

Next, in step S103 , the control valve 219A outputs information indicating the detection opening degree OA2 to the control device U4 .

Next, in step S104 , the determination unit 12 determines whether the absolute difference ΔOA between the reference opening degree OA1 and the detection opening degree OA2 is equal to or greater than a threshold value TH.

When the absolute difference ΔOA is equal to or greater than the threshold value TH in step S104, the determination unit 12 determines that the state of the plurality of bubble supply holes G is abnormal, and the process proceeds to step S105.

In step S105, the determination unit 12 notifies that the state of the bubble supply pipe 180A is abnormal. For example, the determination unit 12 displays information on a display or an external terminal.

On the other hand, in step S104, when absolute difference ΔOA is less than threshold value TH, the determination unit 12 determines that the state of the plurality of bubble supply holes G is normal, and the process proceeds to step S106.

Next, in step S106 , the flow control unit 11 closes the valve 211A to stop supplying the gas to the gas supply pipe 261A.

Next, in step S107 , the substrate holding unit 120 picks up the plurality of substrates W from the processing liquid LQ in the processing tank 110 under the control of the control device U4 . Then, the substrate processing method ends.

As described above with reference to FIGS. 10 to 12 , according to the second embodiment, the determination unit 12 determines the number of the plurality of bubble supply holes G based on the opening degree OAn detected by the regulating valve 219A. determine the status As a result, it becomes unnecessary to form the pressure gauge 253A.

<Embodiment 3>

A substrate processing apparatus 100A according to a third embodiment of the present invention will be described with reference to FIGS. 13 and 14 . 13 and 14 are flowcharts showing the substrate processing method according to the third embodiment. The third embodiment is mainly similar to the first embodiment in that the substrate processing apparatus 100A according to the third embodiment determines the state of the plurality of bubble supply holes G also based on the opening degree OAn of the regulating valve 219A. different Hereinafter, the point that Embodiment 3 differs from Embodiment 1 is mainly demonstrated. In addition, the substrate processing apparatus 100A which concerns on Embodiment 3 is the same as that of the substrate processing apparatus 100A shown to FIGS.

13 and 14 , the substrate processing method includes steps S201 to S218. The substrate processing method is executed by the substrate processing apparatus 100A. In the substrate processing method according to the third embodiment, after the substrate processing method according to the second embodiment is executed, the substrate processing method according to the first embodiment is executed.

First, in step S201 , under the control of the control device U4 , the substrate holding unit 120 immerses the plurality of substrates W in the processing liquid LQ of the processing tank 110 .

Next, in step S202, the flow control unit 11 adjusts the opening degree OAn of the regulating valve 219A to the detection opening degree OA2 based on the flow rate measured by the flow meter 217A, 1 Supply gas with a flow rate of F1.

Next, in step S203 , the control valve 219A outputs information indicating the detection opening degree OA2 to the control device U4 .

Next, in step S204, the determination unit 12 determines whether the absolute difference ΔOA between the reference opening degree OA1 and the detection opening degree OA2 is equal to or greater than a threshold value TH.

In step S204, when the absolute difference ΔOA is less than the threshold value TH, the determination unit 12 determines that the state of the plurality of bubble supply holes G is normal, and the process proceeds to step S205.

Next, in step S205 , the flow control unit 11 closes the valve 211A to stop supplying the gas to the gas supply pipe 261A.

Next, in step S206 , under the control of the control device U4 , the substrate holding unit 120 lifts the plurality of substrates W from the processing liquid LQ of the processing tank 110 . Then, the substrate processing method ends.

On the other hand, when the absolute difference ΔOA is equal to or greater than the threshold value TH in step S204, the determination unit 12 determines that the state of the plurality of bubble supply holes G is abnormal, and the process proceeds to step S207.

Next, in step S207 , the flow control unit 11 closes the valve 211A to stop supplying the gas to the gas supply pipe 261A.

Next, in step S208 shown in FIG. 14 , under the control of the control device U4 , the substrate holding unit 120 draws the plurality of substrates W from the processing liquid LQ of the processing tank 110 . raise it

Next, in step S209 , when the valve 170b is opened for a predetermined period, a part of the processing liquid LQ stored in the inner tank 112 is discharged to the outside through the drain pipe 170a. The predetermined period represents a period for changing from the predetermined depth HA to the predetermined depth HB.

Next, in step S210 , the flow control unit 11 adjusts the opening degree OAn of the regulating valve 219A based on the flow rate measured by the flow meter 217A, and sends the second flow rate F2 to the bubble supply pipe 180A. supply gas.

Next, in step S211, the pressure gauge 253A detects the detection pressure PA2 through the gas supply pipe 261A.

Next, in step S212 , the flow control unit 11 closes the valve 211A to stop supplying the gas to the bubble supply pipe 180A.

Next, in step S213 , the determination unit 12 determines to which range the difference ΔPA between the reference pressure PA1 and the detection pressure PA2 belongs.

In step S213, when the difference ΔPA between the reference pressure PA1 and the detection pressure PA2 is equal to or greater than the second threshold value TH2 and less than the first threshold value TH1, the determination unit 12 determines that the state of the plurality of bubble supply holes G is normal. and the substrate processing method is finished.

Moreover, in step S213, when the difference ΔPA between the reference pressure PA1 and the detected pressure PA2 is equal to or greater than the first threshold value TH1, the determination unit 12 has an abnormal state of the plurality of bubble supply holes G (a plurality of bubble supply holes). ball (G) is blocked), and the processing proceeds to step S214.

In step S214 , when the valve 170b is opened for a predetermined period, the processing liquid LQ stored in the inner tank 112 is discharged to the outside through the drain pipe 170a. The predetermined period represents a period during which the processing liquid LQ disappears from the inner tank 112 .

Next, in step S215 , when the valve 190b is opened, the cleaning liquid is supplied into the inner tank 112 .

Next, in step S216 , when the valve 170b is opened, the cleaning liquid stored in the inner tank 112 is discharged to the outside through the drain pipe 170a. Then, the substrate processing method ends.

On the other hand, in step S213, when the difference ΔPA between the reference pressure PA1 and the detected pressure PA2 is equal to or less than the second threshold value TH2, the determination unit 12 determines that the state of the plurality of bubble supply holes G is abnormal (the plurality of bubble supply holes). ball (G) is widened), and the processing proceeds to step S217.

In step S217 , when the valve 170b is opened, the processing liquid LQ stored in the inner tank 112 is discharged to the outside through the drain pipe 170a.

Next, in step S218, the bubble supply pipe 180A is replaced with a new bubble supply pipe 180A. Then, the substrate processing method ends.

As described above with reference to FIGS. 13 to 14 , according to the third embodiment, the determination unit 12 determines the plurality of bubble supply holes G based on the detection opening degree OAn detected by the regulating valve 219A. determine the status of As a result, in the 1st flow volume F1 at the time of processing the board|substrate W, the change of the state of the some bubble supply hole G can be determined. As a result, the substrate processing and the judgment processing can be executed simultaneously.

Moreover, after the determination part 12 determines that the state of the some bubble supply hole G is abnormal based on detection opening degree OA2 detected by the adjustment valve 219A, detection pressure PA2 detected with the pressure gauge 253A Based on , it is determined whether the state of the plurality of bubble supply holes G is abnormal. As a result, it can confirm with high precision that the state of several bubble supply hole G is abnormal.

In the above, embodiments and examples of the present invention have been described with reference to the drawings. However, this invention is not limited to the said embodiment and an Example, In the range which does not deviate from the summary, it can implement in various aspects. In addition, the some component disclosed by said embodiment can be modified suitably. For example, any component among all the components shown in one embodiment may be added to the component of another embodiment, or some components among all the components shown in any embodiment may be deleted from the embodiment. .

In addition, in order to facilitate understanding of the invention, each component is schematically shown in the drawings, and the thickness, length, number, spacing, etc. of each component shown are actual from the convenience of drawing creation. may be different from In addition, the structure of each component shown in said embodiment is an example, It is not specifically limited, It cannot be overemphasized that various changes are possible in the range which does not deviate substantially from the effect of this invention.

(1) In Embodiment 1, although the determination part 12 judged whether each state of the some bubble supply pipe|tube 180 was abnormal, this invention is not limited to this. The determination unit 12 may determine whether one selected state from among the plurality of bubble supply pipes 180 is abnormal, and the selected one state may be each state of the plurality of bubble supply pipes 180 . As a result, it is not necessary to provide the pressure gauge 253B, the pressure gauge 253C, and the pressure gauge 253D.

(2) In Embodiment 1, although the determination part 12 judged whether each state of the some bubble supply pipe|tube 180 was abnormal one by one, this invention is not limited to this. The determination part 12 may determine simultaneously whether each state of the some bubble supply pipe|tube 180 is abnormal. As a result, the time for judgment processing can be shortened.

(3) In Embodiment 1, although 180A of bubble supply pipe|tube extends in 1st direction D10, this invention is not limited to this. The bubble supply pipe 180A may extend in the 2nd direction D20.

The present invention relates to a substrate processing apparatus and a substrate processing method, and has industrial applicability.

12: judging unit
100B: substrate processing device
110: treatment tank
180A: bubble supply pipe
253A: pressure gauge (physical quantity detection unit)
261A: gas supply pipe
G : Bubble supply hole (opening)
LQ: treatment liquid
W: substrate

Claims (16)

A processing tank for storing the processing liquid and immersing the substrate;
a bubble supply pipe having a plurality of openings for supplying gas as bubbles in the treatment liquid;
a gas supply pipe for supplying the gas to the bubble supply pipe;
a physical quantity detector for detecting a physical quantity resulting from the state of the bubble supply pipe through the gas supply pipe;
and a determination unit configured to determine states of the plurality of openings based on the physical quantity. The method of claim 1,
The determination unit compares a reference physical quantity that is the physical quantity detected at a first time with a detected physical quantity that is the physical quantity detected at a second time to determine the state of the plurality of openings;
The first time and the second time are different. 3. The method of claim 2,
The first time represents a time before processing the substrate,
The second time represents a time after processing the substrate,
The judging unit,
and determining whether or not the states of the plurality of openings are abnormal based on a difference between the reference physical quantity and the detected physical quantity. 3. The method according to claim 1 or 2,
The physical quantity detection unit includes a pressure gauge for detecting the pressure in the gas supply pipe,
The physical quantity represents a pressure in the gas supply pipe. 5. The method of claim 4,
When processing the substrate, further comprising a flow rate control unit for supplying the gas at a first flow rate to the gas supply pipe,
The determination unit determines the state of the plurality of openings based on a pressure in the gas supply pipe when the gas at a second flow rate is supplied to the gas supply pipe;
The second flow rate is greater than the first flow rate, the substrate processing apparatus. 3. The method according to claim 1 or 2,
The physical quantity detection unit includes a control valve for controlling a flow rate of the gas supplied to the gas supply pipe,
The said physical quantity represents the opening degree of the said regulating valve, The substrate processing apparatus. 7. The method of claim 6,
the control valve supplies the gas at a first flow rate to the gas supply pipe when processing the substrate;
The said determination part determines the state of the said some opening based on the said opening degree when the said gas of the said 1st flow volume is supplied to the said gas supply pipe|tube. 3. The method according to claim 1 or 2,
The physical quantity detection unit,
a pressure gauge for detecting the pressure in the gas supply pipe;
And a control valve for controlling the flow rate of the gas supplied to the gas supply pipe,
The physical quantity is
pressure in the gas supply pipe, and
represents the degree of opening of the regulating valve,
the control valve supplies the gas at a first flow rate to the gas supply pipe when processing the substrate;
The judging unit,
determining the state of the plurality of openings based on the opening degree when the gas of the first flow rate is supplied to the gas supply pipe;
The substrate processing apparatus of claim 1, wherein states of the plurality of openings are determined based on a pressure in the gas supply pipe when the gas at a second flow rate greater than the first flow rate is supplied to the gas supply pipe. A substrate processing method for treating a substrate with a processing liquid, comprising:
supplying a gas through a gas supply pipe to a bubble supply pipe having a plurality of openings, and supplying the gas as bubbles into the treatment liquid;
detecting a physical quantity resulting from the state of the bubble supply pipe through the gas supply pipe;
and determining states of the plurality of openings based on the physical quantity. 10. The method of claim 9,
In the step of determining the state, the state of the plurality of openings is determined by comparing a reference physical quantity that is the physical quantity detected at a first time with a detected physical quantity that is the physical quantity detected at a second time,
wherein the first time and the second time are different. 11. The method of claim 10,
The first time represents a time before processing the substrate,
The second time represents a time after processing the substrate,
In the step of determining the state, it is determined whether the state of the plurality of openings is abnormal based on a difference between the reference physical quantity and the detected physical quantity. 11. The method according to claim 9 or 10,
The physical quantity represents a pressure in the gas supply pipe. 13. The method of claim 12,
In the process of supplying the gas,
supplying the gas at a first flow rate to the gas supply pipe when processing the substrate;
When the state of the plurality of openings is determined, the gas at a second flow rate is supplied to the gas supply pipe;
The second flow rate is greater than the first flow rate. 11. The method according to claim 9 or 10,
In the step of supplying the gas, the flow rate of the gas supplied to the gas supply pipe is controlled using a control valve,
The said physical quantity represents the opening degree of the said regulating valve, The substrate processing method. 15. The method of claim 14,
In the process of supplying the gas,
supplying the gas at a first flow rate to the gas supply pipe when processing the substrate;
The substrate processing method of supplying the said gas of the said 1st flow volume to the said gas supply pipe|tube when the state of the said some opening is determined. 11. The method according to claim 9 or 10,
The physical quantity is
pressure in the gas supply pipe, and
represents the opening degree of the regulating valve,
In the step of determining the state,
determining the state of the plurality of openings based on the opening degree when the gas of a first flow rate is supplied to the gas supply pipe;
The substrate processing method of claim 1 , wherein states of the plurality of openings are determined based on a pressure in the gas supply pipe when the gas at a second flow rate greater than the first flow rate is supplied to the gas supply pipe.

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