JP5107762B2 - Substrate processing equipment - Google Patents

Substrate processing equipment Download PDF

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JP5107762B2
JP5107762B2 JP2008077188A JP2008077188A JP5107762B2 JP 5107762 B2 JP5107762 B2 JP 5107762B2 JP 2008077188 A JP2008077188 A JP 2008077188A JP 2008077188 A JP2008077188 A JP 2008077188A JP 5107762 B2 JP5107762 B2 JP 5107762B2
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processing
substrate
holding
processing liquid
pure water
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JP2009231665A (en
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建治 枝光
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Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
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Dainippon Screen Manufacturing Co Ltd
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Description

この発明は、半導体ウエハ、液晶表示装置用ガラス基板、プラズマディスプレイ(PDP)用ガラス基板、磁気/光ディスク用のガラス/セラミック基板、電子デバイス基板等の各種の基板を処理液に浸漬させて洗浄、エッチング等の処理を行う基板処理装置に関する。   The present invention is a method of immersing various substrates such as semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for plasma display (PDP), glass / ceramic substrates for magnetic / optical disks, electronic device substrates, etc. The present invention relates to a substrate processing apparatus that performs processing such as etching.

処理槽内に貯留された処理液中に半導体デバイス等の基板を浸漬させて洗浄、エッチング等の処理を行う基板処理装置においては、基板保持具によって複数枚の基板を保持し、その基板保持具を処理槽の内部と処理槽の上方位置との間で上下方向へ移動させて、複数枚の基板を保持した状態で基板保持具を処理槽内へ上面開口を通し挿入することにより、処理槽内の処理液中に基板を浸漬させて処理する。基板保持具は、複数枚の基板をそれぞれ鉛直姿勢で保持することができるように、水平方向に延びる第1保持部と、その第1保持部に対して左右両側にそれぞれ設けられ第1保持部と平行に水平方向に延びる第2保持部および第3保持部を有している。各保持部には、基板の周縁部と係合する複数の基板保持溝がそれぞれ形設されている。そして、第1保持部で各基板の最下端部がそれぞれ支持され、第2保持部および第3保持部で各基板の、最下端部に対して左右両側の各下端部がそれぞれ支持されて、複数枚の基板が互いに平行に僅かな間隔をあけて水平方向に配列され保持される。   In a substrate processing apparatus that performs processing such as cleaning and etching by immersing a substrate such as a semiconductor device in a processing solution stored in a processing tank, the substrate holder holds a plurality of substrates, and the substrate holder Is moved vertically between the inside of the processing tank and the upper position of the processing tank, and a substrate holder is inserted into the processing tank through the upper surface opening in a state where a plurality of substrates are held. The substrate is immersed in the processing solution. The substrate holders are respectively provided on the left and right sides of the first holding portion extending horizontally and the first holding portion so that the plurality of substrates can be held in a vertical posture. The second holding portion and the third holding portion that extend in the horizontal direction in parallel with each other. Each holding portion is formed with a plurality of substrate holding grooves that engage with the peripheral edge of the substrate. And, the first holding part supports the lowermost end part of each substrate, respectively, the second holding part and the third holding part respectively support the lower end parts of the left and right sides of each board with respect to the lowermost end part, A plurality of substrates are arranged and held in the horizontal direction at a slight interval in parallel with each other.

処理槽の底部近傍には左右両側に、基板保持具に保持される複数の基板の配列方向に沿って延びるように一対の吐出管が配設されている。吐出管には、その軸線方向に沿って複数のスリット状の吐出口が直線上に配列して形成されている。吐出管の吐出口は、処理槽の内部中央方向にかつ斜め下方に向いて開口している。吐出管は、処理液供給管を通して純水や薬液の処理液供給源に流路接続されている。そして、処理液供給源から吐出管へ処理液が連続して供給されると、吐出管の吐出口から処理槽内へ処理液が吐出され、処理槽内が処理液で満たされて、処理槽の上端口から処理液が溢れ出る状態となる。例えば、基板を水洗する場合には、処理槽の内部に純水を満たして処理槽の上端口から処理液が溢れ出る状態とし、複数枚の基板を保持した基板保持具を処理槽内へ挿入して処理槽内の純水中に基板を浸漬させる。このとき、一対の左・右の吐出管の各吐出口から処理槽内部の中央方向に向いて斜め下向きにそれぞれ吐出された純水は、処理槽の底部中央付近でぶつかり合って上向きに流れの方向を変え、上昇流となって処理槽内を流動し、処理槽の上端口からオーバーフローする。このような純水の上昇流および溢流に伴って、基板表面のパーティクル等の不要物や残留薬液が処理槽外へ排出されることとなる(例えば、特許文献1参照。)。
特開2000−114217号公報(第4−5頁、図3、図4)
In the vicinity of the bottom of the processing tank, a pair of discharge pipes are disposed on both the left and right sides so as to extend along the arrangement direction of the plurality of substrates held by the substrate holder. The discharge pipe is formed with a plurality of slit-shaped discharge ports arranged in a straight line along the axial direction. The discharge port of the discharge pipe opens toward the inside center of the processing tank and obliquely downward. The discharge pipe is connected to a processing liquid supply source of pure water or chemical liquid through a processing liquid supply pipe. Then, when the processing liquid is continuously supplied from the processing liquid supply source to the discharge pipe, the processing liquid is discharged from the discharge port of the discharge pipe into the processing tank, and the processing tank is filled with the processing liquid. The processing liquid overflows from the upper end of the nozzle. For example, when washing a substrate with water, fill the inside of the processing tank with pure water and let the processing liquid overflow from the upper end of the processing tank, and insert a substrate holder holding multiple substrates into the processing tank. Then, the substrate is immersed in pure water in the treatment tank. At this time, the pure water discharged obliquely downward from the discharge ports of the pair of left and right discharge pipes toward the central direction inside the treatment tank collides near the bottom center of the treatment tank and flows upward. The direction is changed to flow upward in the processing tank as an upward flow, and overflow from the upper end of the processing tank. As such pure water rises and overflows, unnecessary substances such as particles on the substrate surface and residual chemicals are discharged out of the treatment tank (see, for example, Patent Document 1).
JP 2000-114217 A (page 4-5, FIGS. 3 and 4)

上記した基板処理装置において、基板の表面から残留薬液やパーティクルなどを除去するためには、比較的大きな流速で基板と基板との隙間に純水を流す必要があった。このため、従来の処理装置では、処理槽内で渦流等が発生して処理槽内の純水の流れが常に乱流状態となっており、処理槽外へのパーティクル等の排出が効率良く行われないことがあった。また、処理槽内が常に乱流状態であるため、処理槽内の純水の液面が波立って、その液面を通し空気中の二酸化炭素が純水中に取り込まれ易くなり、処理槽内の純水度の目安となる比抵抗値の回復が遅れることがあった。この結果、処理時間が長くかかり、純水の使用量が増える、といった問題点があった。   In the substrate processing apparatus described above, in order to remove residual chemicals or particles from the surface of the substrate, it is necessary to flow pure water through the gap between the substrate at a relatively high flow rate. For this reason, in the conventional processing apparatus, eddy currents or the like are generated in the processing tank, and the flow of pure water in the processing tank is always in a turbulent state, and particles and the like are efficiently discharged out of the processing tank. There was something I couldn't do. In addition, since the inside of the treatment tank is always in a turbulent state, the surface of pure water in the treatment tank undulates, and carbon dioxide in the air is easily taken into the pure water through the liquid surface. In some cases, the recovery of the specific resistance value, which is a measure of the pure water content, was delayed. As a result, there are problems such as a long processing time and an increase in the amount of pure water used.

この発明は、以上のような事情に鑑みてなされたものであり、複数枚の基板を基板保持手段により保持し処理槽内の処理液中に浸漬させて基板の処理を行う基板処理装置において、基板の表面からパーティクル等の不要物や残留薬液などを除去して効率良く処理槽外へ排出することができ、また、処理槽内の処理液中への空気中の二酸化炭素の取り込みを抑えることができて、処理時間の短縮と処理液の使用量の低減を図ることができる基板処理装置を提供することを目的とする。   This invention is made in view of the above circumstances, in a substrate processing apparatus for processing a substrate by holding a plurality of substrates by a substrate holding means and immersing them in a processing liquid in a processing tank. Remove unnecessary substances such as particles and residual chemicals from the surface of the substrate and efficiently discharge them to the outside of the treatment tank, and suppress the intake of carbon dioxide in the air into the treatment liquid in the treatment tank An object of the present invention is to provide a substrate processing apparatus that can reduce the processing time and the amount of processing liquid used.

請求項1に係る発明は、基板に対して処理液により処理を行う基板処理装置において、上面が開口し処理液を貯留する処理槽と、それぞれ鉛直姿勢で互いに平行にかつ水平方向に配列された複数の基板の最下端部を保持する第1保持部、ならびに、前記複数の基板の、最下端部に対して両側の各下端部をそれぞれ保持する第2保持部および第3保持部を有し、複数の基板を前記各保持部でそれぞれ保持した状態で前記処理槽の内方位置と前記処理槽の上方位置との間で上下方向へ移動する基板保持手段と、前記基板保持手段に保持される複数の基板の配列方向に沿ってそれぞれ配設され、前記処理槽の底部近傍にそれぞれ設けられた各吐出口から前記処理槽の内部に向けてそれぞれ処理液を吐出する一対の処理液供給手段と、前記処理槽に貯留された処理液の比抵抗値を測定する比抵抗値測定手段と、前記比抵抗値測定手段によって測定される処理液の比抵抗値が所定の値に上昇するまで、複数の基板を保持した前記基板保持手段を前記処理槽内において、前記第2保持部および前記第3保持部が前記一対の処理液供給手段の各吐出口からの処理液に当たる位置と当たらない位置とを交互に繰り返すように移動させ、処理液の比抵抗値が所定の値以上となると、前記第2保持部および前記第3保持部が前記一対の処理液供給手段の各吐出口からの処理液に当たる位置に前記基板保持手段を停止させる移動制御手段と、を備えたことを特徴とする。 According to a first aspect of the present invention, in a substrate processing apparatus for processing a substrate with a processing liquid, the processing tank for opening the upper surface and storing the processing liquid is arranged in parallel with each other in a vertical posture and horizontally. A first holding unit for holding the lowermost ends of the plurality of substrates; and a second holding unit and a third holding unit for holding the lower ends of the plurality of substrates on both sides with respect to the lowermost ends. A substrate holding means that moves up and down between an inner position of the processing tank and an upper position of the processing tank in a state where a plurality of substrates are held by the holding sections, respectively, and held by the substrate holding means A pair of processing liquid supply means that are respectively disposed along the arrangement direction of the plurality of substrates and discharge the processing liquid from the respective discharge ports provided in the vicinity of the bottom of the processing tank toward the inside of the processing tank. If, savings in the processing bath A specific resistance measuring means for measuring the specific resistance of the treating solution, the specific resistance value of the processing solution to be measured by the resistivity measurement means until the rise to a predetermined value, holding a plurality of substrates In the processing tank, the substrate holding means is alternately repeated between a position where the second holding portion and the third holding portion hit the processing liquid from each discharge port of the pair of processing liquid supply means and a position where they do not hit. When the specific resistance value of the processing liquid becomes equal to or greater than a predetermined value, the substrate holding unit is held at a position where the second holding unit and the third holding unit hit the processing liquid from each discharge port of the pair of processing liquid supply units. And a movement control means for stopping the means .

請求項2に係る発明は、請求項1に記載の基板処理装置において、基板に対して行われる処理が、純水による水洗処理であって、前記一対の処理液供給手段が、各吐出口からそれぞれ純水を吐出し、前記比抵抗値測定手段が、前記処理槽に貯留された純水の比抵抗値を測定する比抵抗計であることを特徴とする。 According to a second aspect of the present invention, in the substrate processing apparatus according to the first aspect, the processing performed on the substrate is a rinsing process using pure water, and the pair of processing liquid supply means is provided from each discharge port. The specific resistance value measuring means is a specific resistance meter that measures the specific resistance value of the pure water stored in the treatment tank .

請求項1に係る発明の基板処理装置においては、移動制御手段により、複数の基板を保持した基板保持手段が、その第2保持部および第3保持部が一対の処理液供給手段の各吐出口からの処理液に当たる位置と当たらない位置とを交互に繰り返すように移動させられるので、第2保持部および第3保持部が処理液に当たらない位置に基板保持手段があるときは、従来の装置と同様に、処理液供給手段の各吐出口から吐出された処理液は、比較的大きな流速で基板と基板との隙間を通って流動する。このため、基板の表面から残留薬液やパーティクルなどが確実に除去される。一方、第2保持部および第3保持部が処理液に当たる位置に基板保持手段があるときには、処理液供給手段の各吐出口から吐出された処理液は、第2保持部および第3保持部に当たり流れが拡散して流速が弱められ、比較的小さな流速で基板と基板との隙間を通って上向きに流れる。このため、処理液は、基板と基板との隙間を乱流状態とはならないで、処理槽の上部に向かって比較的緩やかに流れ、処理槽の上端口から溢れ出る。そして、処理槽内の処理液中に存在するパーティクル等は、上昇流および溢流によって効率良く処理槽外へ排出される。また、処理槽内の処理液の流れが乱流状態とはならないので、処理槽内の処理液の液面が波立って空気中の二酸化炭素が処理液中に取り込まれる、といったことが抑えられる。
そして、比抵抗値測定手段によって測定される処理液の比抵抗値が所定の値に上昇するまでは、第2保持部および第3保持部が処理液供給手段の各吐出口からの処理液に当たる位置と当たらない位置とを交互に繰り返すように基板保持手段が移動させられ、処理液の比抵抗値が所定の値以上となると、すなわち、例えば処理液が純水であれば処理槽内の純水度が回復すると、第2保持部および第3保持部が処理液供給手段の各吐出口からの処理液に当たる位置に基板保持手段が停止させられるので、以後は、処理槽外へのパーティクル等の排出が促進され、また、処理槽内の処理液の液面が波立って空気中の二酸化炭素が処理液中に取り込まれる、といったことが抑えられる。このため、基板表面からのパーティクル等の除去のために処理液の流速を大きくする、といった状態を必要以上に繰り返すことが無くなる。
したがって、請求項1に係る発明の基板処理装置を使用すると、処理時間の短縮と処理液の使用量の低減を図ることができる。
In the substrate processing apparatus according to the first aspect of the present invention, the substrate holding means holding a plurality of substrates by the movement control means is configured such that the second holding portion and the third holding portion are each discharge port of the pair of processing liquid supply means. since it is the treatment liquid and a position which does not touch a position corresponding moving to repeat alternately from, when the second holding unit and the third holding portion is a substrate holding means in a position not exposed to the treatment solution is a conventional device Similarly, the processing liquid discharged from each discharge port of the processing liquid supply means flows through the gap between the substrates at a relatively high flow rate. For this reason, residual chemicals and particles are reliably removed from the surface of the substrate. On the other hand, when the substrate holding unit is in a position where the second holding unit and the third holding unit hit the processing liquid, the processing liquid discharged from each discharge port of the processing liquid supply unit hits the second holding unit and the third holding unit. The flow is diffused to reduce the flow velocity, and flows upward through the gap between the substrates at a relatively small flow velocity. For this reason, the processing liquid does not become a turbulent flow state between the substrates and flows relatively slowly toward the upper part of the processing tank, and overflows from the upper end of the processing tank. And the particles etc. which exist in the processing liquid in a processing tank are efficiently discharged | emitted out of a processing tank by an upward flow and an overflow. Further, since the flow of the treatment liquid in the treatment tank does not become a turbulent state, it is possible to suppress the liquid level of the treatment liquid in the treatment tank from being swollen and carbon dioxide in the air being taken into the treatment liquid. .
Then, until the specific resistance value of the processing liquid measured by the specific resistance value measuring unit rises to a predetermined value, the second holding unit and the third holding unit hit the processing liquid from each discharge port of the processing liquid supply unit. When the substrate holding means is moved so as to alternately repeat the position and the non-contact position, and the specific resistance value of the processing liquid becomes a predetermined value or more, that is, if the processing liquid is pure water, for example, When the water level is restored, the substrate holding unit is stopped at a position where the second holding unit and the third holding unit hit the processing liquid from each discharge port of the processing liquid supply unit. Discharge is promoted, and the liquid level of the treatment liquid in the treatment tank undulates and carbon dioxide in the air is prevented from being taken into the treatment liquid. For this reason, the state of increasing the flow rate of the processing liquid for removing particles or the like from the substrate surface is not repeated more than necessary.
Therefore, when the substrate processing apparatus of the invention according to claim 1 is used, the processing time can be shortened and the amount of processing liquid used can be reduced.

請求項2に係る発明の基板処理装置では、純水の速い流れにより基板の表面から残留薬液やパーティクルなどが確実に除去される。一方、処理槽内の純水度が回復すると、純水の緩やかな流れにより、処理槽内の純水中に存在するパーティクル等が効率良く処理槽外へ排出され、また、処理槽内の純水の液面が波立って空気中の二酸化炭素が純水中に取り込まれる、といったことが抑えられる。したがって、基板の水洗が好適に行われる。 In the substrate processing apparatus according to the second aspect of the present invention, the residual chemical solution or particles are reliably removed from the surface of the substrate by the fast flow of pure water. On the other hand, when the pure water level in the treatment tank is restored, particles etc. existing in the pure water in the treatment tank are efficiently discharged out of the treatment tank by the gentle flow of pure water. It is possible to prevent the water level from rippled and carbon dioxide in the air from being taken into the pure water. Therefore, the substrate is preferably washed with water.

以下、この発明の最良の実施形態について図面を参照しながら説明する。
図1および図2は、この発明の実施形態の1例を示し、基板処理装置の概略構成を示す模式的断面図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the best embodiment of the present invention will be described with reference to the drawings.
1 and 2 are schematic cross-sectional views showing a schematic configuration of a substrate processing apparatus according to an example of an embodiment of the present invention.

この基板処理装置は、上面が開口し処理液を貯留する処理槽10、および、複数枚の半導体ウエハ等の基板Wを保持する基板保持具(リフタ)12を備える。基板保持具12は、処理槽10の内部へ基板Wを挿入して処理槽10内の処理液中に基板Wを浸漬させ、また、処理槽10内の処理液中から基板Wを引き上げて処理槽10の上方位置へ基板Wを排出する。   The substrate processing apparatus includes a processing tank 10 having an upper surface opened and storing a processing solution, and a substrate holder (lifter) 12 that holds a plurality of substrates W such as semiconductor wafers. The substrate holder 12 inserts the substrate W into the processing tank 10 to immerse the substrate W in the processing liquid in the processing tank 10, and also pulls up the substrate W from the processing liquid in the processing tank 10 to perform processing. The substrate W is discharged to a position above the tank 10.

処理槽10の上部外周には、処理槽10の上端口から溢れ出た処理液が流入する液受け部14が設けられており、液受け部14の底部に形設された排液口に排液管16が連通している。処理槽10の下部には、左右両側に一対の吐出管18、18が設けられている。各吐出管18は、基板保持具12に保持される複数枚の基板Wの配列方向に沿って(紙面に対して垂直方向に)延びるようにそれぞれ配設されている。吐出管18には、処理槽10の底部近傍に吐出口が設けられている。吐出口は、吐出管18の軸線方向に沿って形成されており、例えば複数のスリット状の吐出口が直線上に配列して形成されている。そして、吐出管18の吐出口は、処理槽10の内部中央方向にかつ斜め下方に向いて開口している。   A liquid receiving part 14 into which the processing liquid overflowing from the upper end port of the processing tank 10 flows is provided on the outer periphery of the upper part of the processing tank 10, and is discharged to a drain port formed at the bottom of the liquid receiving part 14. The liquid pipe 16 is in communication. A pair of discharge pipes 18 and 18 are provided on the left and right sides of the lower portion of the processing tank 10. Each discharge pipe 18 is disposed so as to extend along the arrangement direction of the plurality of substrates W held by the substrate holder 12 (in a direction perpendicular to the paper surface). The discharge pipe 18 is provided with a discharge port near the bottom of the processing tank 10. The discharge ports are formed along the axial direction of the discharge pipe 18, and for example, a plurality of slit-shaped discharge ports are formed on a straight line. The discharge port of the discharge pipe 18 opens toward the inside center of the processing tank 10 and obliquely downward.

各吐出管18には、処理液供給管20がそれぞれ連通して接続されている。処理液供給管20は、ミキシングバルブ22の出口側に接続されている。ミキシングバルブ22の流入口には、純水の供給源に流路接続された純水供給管24が接続されており、純水供給管24に開閉制御弁26が介挿されている。また、ミキシングバルブ22には、薬液、例えばフッ酸(HF)の供給源に流路接続された薬液供給管28が接続されており、薬液供給管28に開閉制御弁30が介挿されている。そして、純水供給管24に設けられた開閉制御弁26が開かれ、薬液供給管28に設けられた開閉制御弁30が閉じられた状態では、ミキシングバルブ22の出口から処理液供給管20を通して吐出管18に純水が供給され、吐出管18の吐出口から処理槽10の内部の中央方向に向いて斜め下向きに純水が吐出される。また、両方の開閉制御弁26、30が開かれた状態では、ミキシングバルブ22で純水中にフッ酸が混合されて所定濃度に希釈調整されたフッ酸が、ミキシングバルブ22の出口から処理液供給管20を通して吐出管18に供給され、吐出管18の吐出口から処理槽10の内部の中央方向に向いて斜め下向きにフッ酸が吐出される。   A processing liquid supply pipe 20 is connected to each discharge pipe 18 in communication therewith. The processing liquid supply pipe 20 is connected to the outlet side of the mixing valve 22. A pure water supply pipe 24 connected to a pure water supply source is connected to the inlet of the mixing valve 22, and an open / close control valve 26 is inserted in the pure water supply pipe 24. The mixing valve 22 is connected to a chemical liquid supply pipe 28 connected to a chemical liquid supply source such as hydrofluoric acid (HF), and an open / close control valve 30 is inserted in the chemical liquid supply pipe 28. . When the open / close control valve 26 provided in the pure water supply pipe 24 is opened and the open / close control valve 30 provided in the chemical liquid supply pipe 28 is closed, the processing liquid supply pipe 20 passes through the outlet of the mixing valve 22. Pure water is supplied to the discharge pipe 18, and pure water is discharged obliquely downward from the discharge port of the discharge pipe 18 toward the center in the treatment tank 10. Further, in a state where both of the open / close control valves 26 and 30 are opened, hydrofluoric acid mixed with pure water by the mixing valve 22 and diluted to a predetermined concentration is supplied from the outlet of the mixing valve 22 to the treatment liquid. It is supplied to the discharge pipe 18 through the supply pipe 20, and hydrofluoric acid is discharged obliquely downward from the discharge port of the discharge pipe 18 toward the center in the processing tank 10.

基板保持具12は、鉛直方向に配設されたリフタ部32、ならびに、このリフタ部32の下端部分にそれぞれ取着されて互いに平行にかつ水平方向に配設された3つの保持部、すなわち、リフタ部32の下端部分の中央に取着された第1保持部34、および、リフタ部32の下端部分の左・右にそれぞれ取着された第2保持部36aおよび第3保持部36bを有している。各保持部34、36a、36bには、基板Wの周縁部と係合する複数の基板保持溝(図示せず)がそれぞれ形設されている。そして、複数枚の基板Wは、その各最下端部を第1保持部34でそれぞれ支持されるとともに、最下端部に対して両側の各下端部を第2保持部36aおよび第3保持部36bでそれぞれ支持されて、基板保持具12に鉛直姿勢で互いに平行に僅かな間隔をあけて水平方向に配列され保持される。   The substrate holder 12 includes a lifter portion 32 arranged in the vertical direction, and three holding portions respectively attached to the lower end portion of the lifter portion 32 and arranged in parallel to each other in the horizontal direction, that is, The first holding portion 34 attached to the center of the lower end portion of the lifter portion 32, and the second holding portion 36a and the third holding portion 36b attached to the left and right of the lower end portion of the lifter portion 32 are provided. is doing. Each holding portion 34, 36 a, 36 b is formed with a plurality of substrate holding grooves (not shown) that engage with the peripheral edge of the substrate W. Each of the plurality of substrates W is supported at the lowermost end thereof by the first holding portion 34, and the lower end portions on both sides of the lowermost end portion are the second holding portion 36a and the third holding portion 36b. And are arranged and held in the horizontal direction on the substrate holder 12 in a vertical posture at a slight interval in parallel with each other.

基板保持具12は、そのリフタ部32が支持機構(図示せず)により支持され、リフタ駆動装置38(詳細を図示せず)により処理槽10の内部と処理槽10の上方位置との間で上下方向へ往復移動させられる。リフタ駆動装置38による基板保持具12の昇降動作は、コントローラ40によって制御される。また、コントローラ40でリフタ駆動装置38を制御することにより、複数枚の基板Wを保持した基板保持具12が、処理槽10内において上下方向へ所定距離だけ往復移動させられる。すなわち、図1に示すように一対の吐出管18、18の各吐出口から吐出される処理液に第2保持部36aおよび第3保持部36bが当たらない位置と、図2に示すように一対の吐出管18、18の各吐出口から吐出される処理液に第2保持部36aおよび第3保持部36bが当たる位置とに、リフタ駆動装置38により基板保持具12が移動させられる。   The substrate holder 12 has a lifter portion 32 supported by a support mechanism (not shown), and a lifter driving device 38 (not shown in detail) between the inside of the processing tank 10 and an upper position of the processing tank 10. It can be reciprocated in the vertical direction. The raising / lowering operation of the substrate holder 12 by the lifter driving device 38 is controlled by the controller 40. Further, by controlling the lifter driving device 38 with the controller 40, the substrate holder 12 holding the plurality of substrates W is reciprocated in the processing tank 10 by a predetermined distance in the vertical direction. That is, as shown in FIG. 1, the second holding part 36a and the third holding part 36b do not hit the processing liquid discharged from the discharge ports of the pair of discharge pipes 18, 18, and the pair as shown in FIG. The substrate holder 12 is moved by the lifter driving device 38 to a position where the second holding part 36a and the third holding part 36b hit the processing liquid discharged from the discharge ports of the discharge pipes 18 and 18, respectively.

また、処理槽10の内部には、処理槽10内に貯留された処理液、例えば純水の比抵抗値を測定する比抵抗計のセンサー42が設置されており、センサー42はモニター44に接続されている。そして、比抵抗計モニター44は、コントローラ40に接続されており、モニター44からコントローラ40へ送られる比抵抗値の検出信号に基づいて、コントローラ40からリフタ駆動装置38へ制御信号が送られ、処理槽10内での基板保持具12の上下方向への移動動作が制御される。   Further, a resistivity meter sensor 42 for measuring the resistivity value of the treatment liquid stored in the treatment vessel 10, for example, pure water, is installed inside the treatment vessel 10, and the sensor 42 is connected to the monitor 44. Has been. The specific resistance meter monitor 44 is connected to the controller 40, and a control signal is sent from the controller 40 to the lifter driving device 38 based on a specific resistance value detection signal sent from the monitor 44 to the controller 40. The movement of the substrate holder 12 in the tank 10 in the vertical direction is controlled.

次に、上記した構成の基板処理装置を使用した基板の処理の1例について説明する。
まず、処理槽10内へ吐出管18の吐出口から純水が連続して吐出され、処理槽10内が純水で満たされて、処理槽10の上端口から液受け部14へ純水が溢れ出る状態とされる。この状態で、複数枚の基板Wを保持した基板保持具12が処理槽10の上方位置から下降して、図1に示したように、基板保持具12に保持された複数枚の基板Wが処理槽10内へ挿入されて処理槽10内の純水中に浸漬させられ、基板Wが純水で水洗される。水洗後に、ミキシングバルブ22で純水中にフッ酸を混合させて所定濃度に調整されたフッ酸が、処理槽10内へ吐出管18の吐出口から連続して吐出される。このフッ酸により処理槽10の上端口から純水が押し出されて、処理槽10の内部がフッ酸で置換され、処理槽10の内部にフッ酸が満たされ処理槽10の上端口から液受け部14へフッ酸が溢れ出る状態とされる。そして、処理槽10内に満たされたフッ酸により基板Wが洗浄もしくはエッチングされる。このとき、処理槽10内へフッ酸を所定時間だけ注入した後、処理槽10内へのフッ酸の供給を止め、この状態を所定時間保持して、処理槽10内のフッ酸中に基板Wを浸漬させるようにしてもよい。
Next, an example of substrate processing using the substrate processing apparatus having the above-described configuration will be described.
First, pure water is continuously discharged from the discharge port of the discharge pipe 18 into the processing tank 10, the inside of the processing tank 10 is filled with pure water, and pure water is supplied from the upper end port of the processing tank 10 to the liquid receiving unit 14. It is said that it overflows. In this state, the substrate holder 12 holding the plurality of substrates W descends from the upper position of the processing tank 10, and the plurality of substrates W held by the substrate holder 12 as shown in FIG. The substrate W is inserted into the processing tank 10 and immersed in pure water in the processing tank 10, and the substrate W is washed with pure water. After washing with water, hydrofluoric acid adjusted to a predetermined concentration by mixing hydrofluoric acid into pure water by the mixing valve 22 is continuously discharged from the discharge port of the discharge pipe 18 into the treatment tank 10. This hydrofluoric acid pushes pure water from the upper end port of the treatment tank 10, the inside of the treatment tank 10 is replaced with hydrofluoric acid, the inside of the treatment tank 10 is filled with hydrofluoric acid, and liquid is received from the upper end port of the treatment tank 10. The hydrofluoric acid overflows into the portion 14. Then, the substrate W is cleaned or etched with hydrofluoric acid filled in the processing tank 10. At this time, after injecting hydrofluoric acid into the processing tank 10 for a predetermined time, the supply of hydrofluoric acid to the processing tank 10 is stopped, and this state is maintained for a predetermined time, and the substrate is placed in the hydrofluoric acid in the processing tank 10. W may be immersed.

フッ酸による処理が終了すると、再び処理槽10内へ吐出管18の吐出口から純水が連続して吐出される。この純水により処理槽10の上端口からフッ酸が押し出されて、処理槽10の内部が純水で置換される。そして、処理槽10の内部に純水が満たされ、処理槽10の上端口から液受け部14へ純水が溢れ出る状態とされて、基板Wが水洗される。このとき、複数枚の基板Wを保持した基板保持具12を、第2保持部36aおよび第3保持部36bが一対の吐出管18、18の各吐出口からの純水に当たる位置(図2に示した位置)と当たらない位置(図1に示した位置)とを交互に所定時間ごと、例えば8秒ごとに繰り返すように移動させる。 When the treatment with hydrofluoric acid is completed, pure water is continuously discharged from the discharge port of the discharge pipe 18 into the treatment tank 10 again. The pure water pushes out hydrofluoric acid from the upper end of the treatment tank 10 and replaces the inside of the treatment tank 10 with pure water. Then, the inside of the processing tank 10 is filled with pure water, and the pure water overflows from the upper end port of the processing tank 10 to the liquid receiving portion 14, and the substrate W is washed with water. At this time, the substrate holder 12 holding the substrate W several sheets double, the position where the second holding portion 36a and the third holding portion 36b hits the deionized water from the respective discharge ports of the pair of the discharge pipe 18 (FIG. 2 The position shown in FIG. 1 and the position not shown (position shown in FIG. 1) are alternately moved so as to repeat every predetermined time, for example, every 8 seconds.

上記したように基板保持具12の上下位置を変えて基板Wの水洗を行うことにより、図1に示したように第2保持部36aおよび第3保持部36bが一対の吐出管18、18の各吐出口から吐出された純水に当たらない位置に基板保持具12があるときに、一対の吐出管18、18の各吐出口から吐出された純水は、比較的大きな流速で基板Wと基板Wとの隙間を通って流動する。このため、基板Wの表面から残留フッ酸やパーティクルなどが確実に除去されることとなる。一方、図2に示したように第2保持部36aおよび第3保持部36bが一対の吐出管18、18の各吐出口からの純水に当たる位置に基板保持具12があるときに、一対の吐出管18、18の各吐出口から吐出された純水は、第2保持部36aおよび第3保持部36bに当たり流れが拡散して流速が弱められ、比較的小さな流速で基板Wと基板Wとの隙間を通って上向きに流れる。このため、純水は、基板Wと基板Wとの隙間を乱流状態とはならないで、処理槽10の上部に向かって比較的緩やかに流れ、処理槽10の上端口から溢れ出る。そして、処理槽10内の純水中に存在するパーティクル等は、上昇流および溢流によって効率良く処理槽10外へ排出されることとなる。また、処理槽10内の純水の流れが乱流状態とはならないので、処理槽10内の純水の液面が波立って空気中の二酸化炭素が純水中に取り込まれる、といったことが抑えられる。   As described above, by changing the vertical position of the substrate holder 12 and washing the substrate W with water, the second holding portion 36a and the third holding portion 36b are connected to the pair of discharge pipes 18 and 18, as shown in FIG. When the substrate holder 12 is located at a position that does not contact the pure water discharged from each discharge port, the pure water discharged from each discharge port of the pair of discharge pipes 18 and 18 flows into the substrate W at a relatively high flow rate. It flows through the gap with the substrate W. For this reason, residual hydrofluoric acid and particles are reliably removed from the surface of the substrate W. On the other hand, when the substrate holder 12 is located at a position where the second holding part 36a and the third holding part 36b hit the pure water from the discharge ports of the pair of discharge pipes 18 and 18, as shown in FIG. The pure water discharged from each discharge port of the discharge pipes 18 and 18 hits the second holding part 36a and the third holding part 36b, the flow is diffused and the flow velocity is weakened. It flows upward through the gap. For this reason, the pure water does not enter a turbulent flow state between the substrate W and the substrate W, flows relatively slowly toward the upper part of the processing tank 10, and overflows from the upper end port of the processing tank 10. And the particles etc. which exist in the pure water in the processing tank 10 will be efficiently discharged | emitted out of the processing tank 10 by an upward flow and an overflow. Moreover, since the flow of pure water in the treatment tank 10 does not become a turbulent state, the level of pure water in the treatment tank 10 undulates and carbon dioxide in the air is taken into the pure water. It can be suppressed.

して、この場合に、処理槽10に貯留された純水の比抵抗値を比抵抗計42、44で測定し、その測定された純水の比抵抗値に基づいてコントローラ40によりリフタ駆動装置38を制御して、比抵抗の測定値が所定の値に上昇するまで、すなわち処理槽10内の純水度が回復するまで、例えば処理槽10内の純水の比抵抗値が5MΩ・cmになるまで、第2保持部36aおよび第3保持部36bが一対の吐出管18、18の各吐出口からの純水に当たる位置と当たらない位置とを交互に繰り返すように基板保持具12を移動させ、処理槽10内の純水の比抵抗値が所定の値以上となると、第2保持部36aおよび第3保持部36bが一対の吐出管18、18の各吐出口からの純水に当たる位置に基板保持具12を停止させるようにする。図3の(a)に、基板保持具12の上下方向への移動動作のタイムチャートの1例を示し、図3の(b)に、そのときの純水の比抵抗値の時間的変化の1例を示す。基板Wの水洗が終了すると、基板保持具12が上昇して基板Wが処理槽10内から排出され、基板Wが乾燥処理される。 Their to, in this case, the resistivity of the pure water stored in the processing bath 10 is measured with a resistivity meter 42 and 44, the lifter driven by the controller 40 on the basis of the resistivity of the pure water that is the measured Until the measured value of the specific resistance rises to a predetermined value by controlling the apparatus 38, that is, until the pure water level in the treatment tank 10 is recovered, for example, the specific resistance value of pure water in the treatment tank 10 is 5 MΩ · The substrate holder 12 is repeatedly placed so that the position where the second holding part 36a and the third holding part 36b are in contact with the pure water from the discharge ports of the pair of discharge pipes 18 and the position where they are not in contact with each other until the distance becomes cm. When the specific resistance value of the pure water in the treatment tank 10 is equal to or greater than a predetermined value, the second holding unit 36a and the third holding unit 36b hit the pure water from the discharge ports of the pair of discharge pipes 18 and 18. to stop the substrate holder 12 in position. FIG. 3 (a) shows an example of a time chart of the movement operation of the substrate holder 12 in the vertical direction, and FIG. 3 (b) shows the temporal change in the specific resistance value of pure water at that time. An example is shown. When the washing of the substrate W is completed, the substrate holder 12 is raised, the substrate W is discharged from the processing tank 10, and the substrate W is dried.

なお、上記した実施形態では、最終の水洗処理の際にだけ基板保持具12を処理槽10内で上下方向へ移動させるようにしたが、最初の水洗処理時やフッ酸による洗浄(もしくはエッチング)処理時にも基板保持具12を処理槽10内で上下方向へ移動させるようにしてもよい。   In the above-described embodiment, the substrate holder 12 is moved in the vertical direction in the treatment tank 10 only during the final water washing process. However, the first water washing process or cleaning with hydrofluoric acid (or etching) is performed. Even during processing, the substrate holder 12 may be moved in the vertical direction in the processing tank 10.

この発明の実施形態の1例を示し、基板処理装置の概略構成を示す模式的断面図である。1 is a schematic cross-sectional view illustrating a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention. 図1に示した基板処理装置において、その構成要素である基板保持具が図1に示した状態から下方へ移動した状態を示す模式的断面図である。FIG. 2 is a schematic cross-sectional view showing a state in which the substrate holder that is a component of the substrate processing apparatus shown in FIG. 1 has moved downward from the state shown in FIG. 図1および図2に示した基板処理装置を使用した基板の処理の1例について説明するための図であって、(a)は、基板保持具の上下方向への移動動作のタイムチャートを示し、(b)は、純水の比抵抗値の時間的変化を示す。It is a figure for demonstrating one example of the process of the board | substrate using the substrate processing apparatus shown in FIG.1 and FIG.2, (a) shows the time chart of the movement operation | movement of a substrate holder to an up-down direction. , (B) shows the temporal change in the specific resistance value of pure water.

符号の説明Explanation of symbols

10 処理槽
12 基板保持具
14 液受け部
18 吐出管
20 処理液供給管
22 ミキシングバルブ
24 純水供給管
26、30 開閉制御弁
28 薬液供給管
32 基板保持具のリフタ部
34 第1保持部
36a、36b 第2保持部および第3保持部
38 リフタ駆動装置
40 コントローラ
42 比抵抗計のセンサー
44 比抵抗計のモニター
W 基板
DESCRIPTION OF SYMBOLS 10 Processing tank 12 Substrate holder 14 Liquid receiving part 18 Discharge pipe 20 Processing liquid supply pipe 22 Mixing valve 24 Pure water supply pipe 26, 30 Opening / closing control valve 28 Chemical liquid supply pipe 32 Lifter part of substrate holder 34 First holding part 36a 36b Second holding unit and third holding unit 38 Lifter driving device 40 Controller 42 Sensor of resistivity meter 44 Monitor of resistivity meter W substrate

Claims (2)

基板に対して処理液により処理を行う基板処理装置において、
上面が開口し処理液を貯留する処理槽と、
それぞれ鉛直姿勢で互いに平行にかつ水平方向に配列された複数の基板の最下端部を保持する第1保持部、ならびに、前記複数の基板の、最下端部に対して両側の各下端部をそれぞれ保持する第2保持部および第3保持部を有し、複数の基板を前記各保持部でそれぞれ保持した状態で前記処理槽の内方位置と前記処理槽の上方位置との間で上下方向へ移動する基板保持手段と、
前記基板保持手段に保持される複数の基板の配列方向に沿ってそれぞれ配設され、前記処理槽の底部近傍にそれぞれ設けられた各吐出口から前記処理槽の内部に向けてそれぞれ処理液を吐出する一対の処理液供給手段と、
前記処理槽に貯留された処理液の比抵抗値を測定する比抵抗値測定手段と、
前記比抵抗値測定手段によって測定される処理液の比抵抗値が所定の値に上昇するまで、複数の基板を保持した前記基板保持手段を前記処理槽内において、前記第2保持部および前記第3保持部が前記一対の処理液供給手段の各吐出口からの処理液に当たる位置と当たらない位置とを交互に繰り返すように移動させ、処理液の比抵抗値が所定の値以上となると、前記第2保持部および前記第3保持部が前記一対の処理液供給手段の各吐出口からの処理液に当たる位置に前記基板保持手段を停止させる移動制御手段と、
を備えたことを特徴とする基板処理装置。
In a substrate processing apparatus for processing a substrate with a processing liquid,
A treatment tank in which the upper surface is opened and the treatment liquid is stored;
A first holding unit that holds the lowermost ends of the plurality of substrates arranged in parallel and horizontally in a vertical posture, and lower end portions on both sides of the lowermost ends of the plurality of substrates, respectively. It has the 2nd holding part and the 3rd holding part to hold, and is in the up-and-down direction between the inward position of the processing tub, and the upper position of the processing tub in the state where a plurality of substrates were held by each holding part, respectively. Moving substrate holding means;
Disposed along the arrangement direction of the plurality of substrates held by the substrate holding means, and discharges the processing liquid from the discharge ports respectively provided near the bottom of the processing tank toward the inside of the processing tank. A pair of processing liquid supply means,
Specific resistance value measuring means for measuring the specific resistance value of the processing liquid stored in the processing tank;
Until the specific resistance value of the processing liquid measured by the specific resistance value measuring means rises to a predetermined value, the substrate holding means holding a plurality of substrates is placed in the processing tank in the second holding portion and the second 3 When the holding unit is moved so as to alternately repeat the position where it hits the processing liquid from each discharge port of the pair of processing liquid supply means and the position where it does not hit , when the specific resistance value of the processing liquid becomes a predetermined value or more, A movement control unit that stops the substrate holding unit at a position where the second holding unit and the third holding unit hit the processing liquid from each discharge port of the pair of processing liquid supply units ;
A substrate processing apparatus comprising:
請求項1に記載の基板処理装置において、
基板に対して行われる処理は、純水による水洗処理であって、前記一対の処理液供給手段は、各吐出口からそれぞれ純水を吐出し、前記比抵抗値測定手段は、前記処理槽に貯留された純水の比抵抗値を測定する比抵抗計であることを特徴とする基板処理装置。
The substrate processing apparatus according to claim 1,
The treatment performed on the substrate is a water washing treatment with pure water, wherein the pair of treatment liquid supply means discharges pure water from each discharge port, and the specific resistance value measurement means is provided in the treatment tank. A substrate processing apparatus, which is a resistivity meter for measuring a resistivity value of stored pure water .
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