KR20210122729A - Light source module, display panel and manufacturing method thereof - Google Patents

Abstract

According to an embodiment of the present invention, a display panel comprises: a transparent support member; a thin film transistor unit disposed on an upper surface of the support member and having pads; a plurality of LED chips disposed on the upper surface of the support member and having electrodes on an upper surface thereof; a transparent adhesive layer bonding the support member and each of the plurality of LED chips; a resin member covering the plurality of LED chips; and a plurality of connection units disposed on the resin member and connecting the electrodes and the pads. The plurality of LED chips form a pixel region having a first LED chip to a third LED chip emitting different colors, and light emitted from the plurality of LED chips may be emitted through a lower surface of the support member through the support member.

Description

Light source module, display panel and manufacturing method thereof

An embodiment of the invention relates to a light source module and a display panel. An embodiment of the present invention relates to a method of manufacturing a light source module or a display panel. An embodiment of the present invention relates to a method of manufacturing a panel in which light emitting diode chips having a size of micrometers or less are packaged. An embodiment of the invention relates to a display device having a display panel.

A conventional display device is mainly composed of a display panel composed of a liquid crystal display (LCD) and a backlight, but recently, a semiconductor device such as a light emitting diode (LED) is used as a pixel as it is. A display device using such an LED is being developed in a form that does not require a separate backlight. In addition, a display device using such an LED can be made compact, and a high-brightness display with superior light efficiency compared to a conventional LCD can be realized. In addition, since the aspect ratio of the display screen can be freely changed and implemented in a large area, various types of large displays can be provided.

In advertising or screen display in public places, the demand for large screens is increasing, and LEDs are used as display means of large screens. This is because it is easy to enlarge the display means using a conventional liquid crystal light emitting panel, consumes less electrical energy, and has a long lifespan with low maintenance cost. Recently, large display means using LEDs are used in various places such as TVs, monitors, electric signs for stadiums, outdoor advertisements, indoor advertisements, public signs, and information display boards, and the configuration methods are also various.

An embodiment of the present invention provides a light source module, a display panel, and a method of manufacturing the same in which one surface of a plurality of light emitting diode chips is adhered to a transparent circuit board and packaged.

An embodiment of the present invention provides a display panel in which a plurality of light emitting diode chips are picked up on a conductive carrier, an adhesive layer is attached to a lower surface of the light emitting diode chip, and then adhered to the circuit board, and a method of manufacturing the same.

In an embodiment of the present invention, a plurality of light emitting diode chips attached to a transparent substrate are sealed with an insulating layer, and the transparent substrate and the light emitting diode chip are electrically connected to each other by connecting parts, so that light is transmitted through the other surface (or lower surface) of the transparent substrate. It is possible to provide a display panel and a display device to irradiate.

An embodiment of the invention does not pre-apply a separate adhesive layer on the upper part of the pad of the circuit board, but first attaches the adhesive layer to one surface of the light emitting diode chips and then attaches it to one surface (or upper surface) of the circuit board, and the other surface of the circuit board A display panel and a display device in which light is emitted through the

A display panel according to an embodiment of the present invention includes a transparent support member; a thin film transistor unit disposed on the upper surface of the support member and having pads; a plurality of LED chips disposed on the upper surface of the support member and having electrodes thereon; a transparent adhesive layer for bonding the support member and each of the plurality of LED chips; a resin member covering the plurality of LED chips; and a plurality of connecting parts disposed on the resin member and connecting the electrode and the pad, wherein the plurality of LED chips form a pixel region having first to third LED chips emitting light of different colors, Light emitted from the plurality of LED chips may be emitted through a lower surface of the support member through the support member.

A display panel according to an embodiment of the present invention includes a transparent support member; a thin film transistor unit disposed on the upper surface of the support member and having pads; a plurality of LED chips disposed on the upper surface of the support member and having electrodes thereon; a transparent adhesive layer for bonding the support member and each of the plurality of LED chips; a resin member covering the plurality of LED chips; and a plurality of connection parts disposed on the resin member and connecting the electrode and the pad. The plurality of LED chips form a pixel region having first to third LED chips emitting different colors, and the light emitted from the plurality of LED chips passes through the support member to pass through the lower surface of the support member. can be released through

According to an embodiment of the present invention, a passivation layer for protecting the upper portions of the plurality of connection parts, the resin member, and the thin film transistor part may be included. The resin member may include an absorbing material, and the adhesive layer may be adhered to a lower side surface of each of the LED chips, and may include a thermally conductive inorganic filler.

According to an embodiment of the invention, the adhesive layer may be adhered to the upper surface of the support member, and the resin member may be adhered to the side and upper surfaces of the LED chip, and the outer surface of the adhesive layer.

According to an embodiment of the present invention, each of the LED chips includes a first electrode and a second electrode, the TFT part includes a first pad and a second pad around each LED chip, and the connection part is on the resin member. a first connector connected between a first electrode and the first pad, and a second connector connected between the second electrode and the second pad, wherein the resin member on which the first and second connectors are disposed is concave It may include a curved surface or an inclined surface.

According to an embodiment of the present invention, the edge pattern disposed in the upper edge region of the support member may be spaced apart from the edge of the support member and sealed by at least one of the resin member and the passivation layer.

A method of manufacturing a display panel according to an embodiment of the present invention includes: a first step of picking up a plurality of LED chips having electrodes disposed thereon on a lower surface of a conductive carrier; a second step of facing the conductive carrier on an auxiliary substrate on which a transparent adhesive layer is formed, and stamping the adhesive layer on each of the lower surfaces of the LED chips; And when the adhesive layer is stamped on the LED chip, a third step of placing a conductive carrier on a circuit board having a thin film transistor part, and attaching the LED chips to an upper surface of a transparent support member of the circuit board with an adhesive layer, In the third step, the adhesive layer formed on each of the lower surfaces of the first LED chips is attached to the upper surface of the circuit board, respectively, and the adhesive layer formed on each lower surface of the second LED chips is attached to the upper surface of the circuit board, respectively. and the adhesive layer formed on each of the lower surfaces of the third LED chips may be attached to the upper surface of the circuit board, respectively.

According to an embodiment of the invention, the conductive carrier has a conductive elastic member disposed at the lower portion, and the conductive carrier having the conductive elastic member picks up the LED chips when power is supplied, and turns the LED chips into a circuit when the power is cut off. It can be separated on the substrate.

According to an embodiment of the present invention, the plurality of LED chips may include LED chips for each color emitting red, green, or blue light, and the adhesive layer may include a transparent inorganic material.

According to an embodiment of the invention, forming a resin member on the circuit board, sealing the plurality of LED chips and the thin film transistor pad; opening the electrodes disposed on the plurality of LED chips and the pads of the thin film transistor; and forming a conductive connection layer on the resin member and then etching to form a plurality of connection parts selectively connecting the electrodes and pads of the respective LED chips.

According to an embodiment of the present invention, the method may include forming a passivation layer on the resin member and the plurality of connection parts, wherein the resin member is an absorbent material, and may be adhered to the adhesive layer and a side surface of the LED chip.

According to an embodiment of the invention, the method may further include disposing a conductive part and a driving substrate on the passivation layer.

According to an embodiment of the invention, when a defective LED chip is generated among a plurality of LED chips disposed on the circuit board, irradiating a laser to the defective LED chip to dissolve the adhesive layer; and picking up the defective LED chip with the conductive carrier and relocating a new LED chip.

In an embodiment of the present invention, an adhesive layer is attached to one surface of a plurality of light emitting diode chips in advance through a stamping process and then adhered to a circuit board, so that the manufacturing process can be simplified, and the thickness of the adhesive layer can be uniformly provided. There are possible technical effects.

The embodiment of the present invention has a technical effect of removing the bonding process on the surface of the circuit board by attaching an adhesive layer to one surface of the light emitting diode chip through a stamping process.

The embodiment of the present invention has a technical effect of protecting the light emitting diode chips by bonding a plurality of light emitting diode chips having an adhesive layer formed thereon to a circuit board through a conductive carrier having elasticity.

An embodiment of the invention has a technical effect that can adhere a plurality of light emitting diode chips to a circuit board for each block or color.

The embodiment of the present invention has an effect of sealing the area except for the emission surface of the light emitting diode chips by sealing the plurality of light emitting diode chips attached to the circuit board with an insulating layer.

An embodiment of the present invention may electrically connect the electrodes of the light emitting diode chip to the pads of the circuit board through a connection pattern disposed on the surface of the insulating layer of the plurality of light emitting diode chips attached to the circuit board. Accordingly, interference of light emitted to the lower surface of the circuit board may be blocked and light extraction efficiency may be improved.

In an embodiment of the present invention, the thin film transistor unit and the light emitting diode chips are arranged on one surface of the circuit board, and the light emitting area may be provided through the other surface. Accordingly, a connection pattern for connecting to the lower pattern may not be formed on the side surface or the outer portion of the circuit board, and components such as a driver chip may be disposed on one surface of the circuit board.

An embodiment of the invention has a technical effect of being able to select and replace an erroneous chip from among a plurality of light emitting diode chips adhered to a circuit board, or to additionally arrange the chip.

The embodiment of the present invention has a technical effect that the process yield of a light source module or a display panel having a plurality of light emitting diode chips can be improved.

There is a technical effect that can improve the reliability of the light source module, the display panel, and the display device according to the embodiment of the present invention.

1 and 2 are examples of cutting a circuit board having a thin film transistor unit in a panel unit according to an embodiment of the present invention.
3 is a view showing an example of a display device having a plurality of LED chips according to an embodiment of the present invention.
4 and 5 are views illustrating a process of picking up a plurality of LED chips on a conductive carrier according to an embodiment of the present invention.
6 is a cross-sectional view showing an example of an LED chip as an example of the invention.
7 is a view showing a process of facing the adhesive layer on the lower surface of a plurality of LED chips in an embodiment of the present invention.
8 is a view illustrating a process in which an adhesive layer is coated on an auxiliary substrate according to an embodiment of the present invention.
9 is a detailed configuration diagram of a conductive carrier in an embodiment of the present invention.
10A and 10B are diagrams for explaining a pick-up process of an electrostatic chuck according to a comparative example.
11 is a view illustrating an example of a conductive carrier layer in which LED chips to which an adhesive layer is adhered are arranged in an embodiment of the present invention.
12 is a view showing an example of bonding LED chips picked up on a conductive carrier to a circuit board in an embodiment of the present invention.
13 is an example in which LED chips are attached to one surface of a circuit board according to an embodiment of the present invention.
14 is an example in which first to third LED chips are arranged on a circuit board according to an embodiment of the present invention.
15A and 15B are diagrams illustrating a packaging process of an LED chip attached to a circuit board according to an embodiment of the present invention.
16 is a detailed view of a process of exposing an electrode of an LED chip on a circuit board according to an embodiment of the present invention.
17 is a view showing an example in which light is emitted by first to third LED chips on a circuit board according to an embodiment of the present invention.
18 is a diagram illustrating an example of a connection between a thin film transistor unit disposed on one surface of a circuit board and an LED chip according to an embodiment of the present invention.
19 is an example in which a driving board is connected on a circuit board according to an embodiment of the present invention.
20 is an example of the plan view of FIG. 19 .
21 is an example illustrating an edge side of a circuit board according to an embodiment of the present invention.
22 is a diagram illustrating an example of replacing an LED chip on a circuit board according to an embodiment of the present invention.
23 and 24 are examples of arrangement of the region P and the LEDs on the circuit board according to the embodiment of the present invention.
25 is a graph comparing an adsorption force for adsorbing LED chips, a dechucking force for releasing, and an adhesive force of an adhesive layer according to an embodiment of the present invention.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the technical field to which the present invention belongs It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are illustrative and the present invention is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the case in which the plural is included is included unless otherwise explicitly stated. In interpreting the components, it is interpreted as including an error range even if there is no separate explicit description. In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'beside', etc., 'right' Alternatively, one or more other parts may be positioned between the two parts unless 'directly' is used.

In the case of a description of a temporal relationship, for example, 'immediately' or 'directly' when a temporal relationship is described with 'after', 'following', 'after', 'before', etc. It may include cases that are not continuous unless this is used. Although the first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present invention.

Each feature of the various embodiments of the present invention may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each of the embodiments may be implemented independently of each other or may be implemented together in a related relationship. may be

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 and 2 are examples of cutting a circuit board having a thin film transistor unit in a panel unit in an embodiment of the invention, and FIG. 3 is a view showing an example of a display device having a plurality of LED chips according to an embodiment of the invention, 4 and 5 are views explaining a process of picking up a plurality of LED chips on a conductive carrier according to an embodiment of the invention, Figure 6 is an example of the invention, a cross-sectional view showing an example of the LED chip, Figure 7 is the invention of It is a view showing a process in which an adhesive layer is opposed to the lower surface of a plurality of LED chips in an embodiment, FIG. 8 is a view showing a process in which an adhesive layer is coated on an auxiliary substrate according to an embodiment of the invention, and FIG. 9 is an embodiment of the invention is a detailed configuration diagram of a conductive carrier in FIG. 10 (A) (B) is a diagram for explaining a pickup process of an electrostatic chuck of a comparative example, and FIG. 11 is a conductive arrangement of LED chips to which an adhesive layer is adhered in an embodiment of the invention It is a view showing an example of a carrier layer, and FIG. 12 is a view showing an example of bonding LED chips picked up on a conductive carrier to a circuit board in an embodiment of the invention, and FIG. It is an example attached to one surface, and FIG. 14 is an example in which first to third LED chips are arranged on a circuit board in an embodiment of the invention, and FIGS. 15A and 15B are LEDs attached to a circuit board in an embodiment of the invention It is a view explaining a packaging process of a chip, FIG. 16 is a detailed view of a process of exposing electrodes of an LED chip on a circuit board in an embodiment of the invention, and FIG. It is a diagram showing an example in which light is emitted by the 3LED chip.

1 to 17, a thin film transistor (TFT) and LED chips are mounted on an individual light emitting area A1 on one surface (or an upper surface) of the support member 1, and a wiring pattern for driving these is formed, The other surface (or rear surface) of the support member 1 may be a light emitting surface from which the lights emitted from the LED chips are emitted or a display surface. Each of the LED chips may be a mini LED or micro-sized LEDs. Here, a driver IC or various components for driving the LED chip or TFT may be disposed on one surface of the support member 1 . That is, the driver IC or various components may be disposed on one surface of the support member 1 instead of on the other surface. Accordingly, light may be emitted through the transparent material of the support member 1 . The support member 1 may be cut into unit-sized display panels 11 , 12 , 13 , and 14 through cutting lines C1 and C2 . Here, the individual support member 1 having the wiring pattern may be defined as a circuit board.

The support member 1 is a support layer of the circuit board, and may be formed of a transparent material, and may include at least one of a plastic material, a glass material, a ceramic material, and a transparent insulating film. The support member 1 may be a transparent flexible substrate on which a pattern is formed on the upper/lower portions or a non-flexible substrate. Here, the lower pattern of the support member 1 may or may not be formed around the periphery.

The size of each of the display panels 11, 12, 13, and 14 may be implemented in a size suitable for various application fields, such as a wrist watch, a mobile phone terminal, or a tiling-type monitor or TV, or a large TV or a single panel of a billboard. . For example, the size of each of the display panels 11, 12, 13, and 14 may be 2 inches or more, but is not limited thereto.

Here, the boundary portion between the adjacent display panels 11, 12, 13, and 14 is a portion in which the support member 1 is cut to the size of individual panels. There may be a problem in that thermal shock is applied to or destroyed by the device or parts, and also various wiring adjacent to the cutting line may be deteriorated.

An example of the invention is to cut along the cutting lines C1 and C2 by a laser beam in a low-temperature vacuum chamber. Accordingly, thermal shock to the edge regions A2 and A3 of the individual support member 1 is minimized, and deterioration of the TFT and various components or wiring can be reduced. Here, the low-temperature vacuum chamber is a chamber in an environment in the range of 0 degrees to -50 degrees, and when gas is injected, a laser beam is irradiated. At this time, plasma is locally generated, and the cutting line C1 of the support member 1 C2) will be cut. At this time, since the cutting process is performed in the low-temperature vacuum chamber, it is possible to reduce problems caused by the reaction with gases such as oxygen in the atmosphere. The gas supplied from the low-temperature vacuum chamber may be selected and controlled, and may include at least one or both of an inert gas and a fluorine gas. The gas is, for example, at least one of N ₂ , Ar, He, CF ₄ , SF ₆ , NH ₃ , CF ₄ /H ₂ , CHF ₃ , C ₂ F ₆ , H ₂ , C ₂ H ₄ , CH ₄ and O ₂ may be included. Here, the content of oxygen in the gas may be provided in the range of 0.1% or more, for example, 0.1% to 10%. In addition, the type of gas may be selected through the synthesis unit and the content thereof may be adjusted.

At this time, since plasma is generated and cut with a laser beam in an environment in the low-temperature chamber, deterioration of parts, elements, wiring, etc. caused by cutting of the support member 1 can be reduced. In addition, it is possible to minimize the heat damage (HAZ) in the vicinity due to high temperature during cutting, and it is possible to reduce the heat damage area to an area of 20 μm or less from the cutting lines C1 and C2. Accordingly, it is possible to improve the thermal reliability of the display panel or the substrate. In addition, since the process is carried out at a low temperature, it is possible to increase the processing speed. In addition, heat damage to the substrate is reduced, and cracks, chipping, and condensation caused by humidity can be reduced. Accordingly, since the substrates are precisely cut in the low-temperature vacuum chamber, the gap between the panels can be reduced and the processing tolerance can be minimized.

As shown in (A) (B) of FIG. 2 , the cut display panel 11 may be divided into a central emission area A1 and edge areas A2 and A3 which are non-emission areas. In the edge area, upper pads 31 may be disposed on the upper surface Sa, or pads may be disposed at upper and lower edge areas. In this case, the pads may be formed in an area other than the display area. The upper pads 31 may be used as test terminals.

In the conventional support member 1 or display panel, a process of arranging an LED chip and an upper pad on an edge area, placing a lower pad and a driver IC on the lower part, and connecting them to each other is performed, in this case, the upper pad and the lower part In order to connect the pads, there is a problem in that a pattern extending to the side surface Sc of the panel or a pattern penetrating the panel must be formed, and there is a problem in that a layer for protecting the pattern must be formed separately. In addition, when forming the pattern, since the deposition force is low and the curing process proceeds after deposition, it may be complicated. Also, in the related art, there is a complicated problem of forming a via by processing a via hole in each of several hundred or more pads in each edge region when forming a through pattern, dispensing and curing a metal material in each of the via holes.

As shown in FIG. 3 , in the display panel, unit pixels having a TFT unit 50 and a plurality of LED chips 2A, 2B, and 2C are arranged in a matrix form on one surface (or upper surface) Sa of the individual support member 1 . can be

Here, as shown in (A) (B) (C) of FIG. 3, the embodiment of the present invention provides blocks D1, D2, and D3 having previously provided LED chips 2A, 2B, and 2C, and the blocks (D1, D2, D3) Each of 10 or more or 100 or more LED chips may be arranged at a preset interval. Here, the preset interval may be an interval for mounting the LED chips on the display panel. Each of the blocks D1, D2, and D3 is, for example, a first block D1 in which first LED chips 2A are arranged, a second block D2 in which second LED chips 2B are arranged, and a third A third block D3 in which the LED chips 2C are arranged may be included. The first LED chips 2A may emit red light, the second LED chips 2B may emit green light, and the third LED chips 2C may emit blue light. A plurality of first to third LED chips 2A, 2B, and 2C may be arranged at preset intervals in horizontal and vertical directions in each of the first to third blocks D1, D2, and D3.

Each of these blocks (D1, D2, D3) is sequentially adhered to a predetermined area on the support member 1, and then the LED chips of each block are electrically connected to the LED on the support member 1 It is possible to mount chips 2A, 2B, and 2C. In the LED chips, a lower surface from which light is emitted is attached to one surface Sa of the support member 1 , and electrodes may be exposed on the LED chips. At this time, a resin member 150 for absorbing or blocking light may be disposed on the support member 1 to block light leakage or emission in the upper direction, and the other surface Sb or lower portion of the support member 1 . direction can be emitted.

The LED chips 2A, 2B, and 2C of each block disposed on the support member 1 may be electrically connected to the TFT unit 50 to be driven, and the first to third LED chips 2A, 2B , 2C) may each be a sub-pixel, and a minimum area in which at least one of the first to third LED chips 2A, 2B, and 2C is disposed may be defined as a unit pixel. Here, as the unit pixel, three types of LED chips 2A, 2B, and 2C emitting different colors may be used, or a pixel area may be implemented by combining a blue LED chip and a phosphor layer. The unit pixel may be implemented with LED chips 2A, 2B, and 2C emitting different colors, for example, at least three colors, or a combination of LED chips emitting the same color and sheets such as quantum dots or phosphors. have. The unit pixel may emit red, green, and blue light. For example, the LED chips 2A, 2B, and 2C may include red (R), green (G), and blue (B) LED chips. . For example, the LED chips 2A, 2B, and 2C may all include LED chips emitting the same color. The LED chips 2A, 2B, and 2C are chips having a micro size for sub-pixels, and for example, the length of one side of each LED chip may be in the range of 10 μm to 100 μm. The size of the LED chips 2A, 2B, and 2C may be in the range of a micro-size (≤1 μm, or 1 μm-50 μm) with one side length depending on the micro-manufacturing technology of the LED chip. For example, the size of the LED chips 2A, 2B, and 2C may be in the range of 1 μm to 50 μm Х 1 μm to 50 μm, but is not limited thereto.

In addition, when a plurality of display panels are closely coupled for a display device, they may be closely coupled so as not to be distinguished from the outside. That is, the display panels may have an arrangement structure or a coupling structure in which dark lines are not generated at the boundary portion. The size of the display device including the display panels may vary according to the number of the display panels combined and the size of each panel. In addition, in the display device, each panel has a structure that can be combined, separated, or removed.

As the circuit board of the display panel, a TFT array board capable of driving a plurality of LED chips 2A, 2B, and 2C is used. That is, the circuit board is formed with a thin film transistor (TFT) unit 50 and various wirings for driving the plurality of LED chips 2A, 2B, and 2C. When the thin film transistor is turned on, the thin film transistor is turned on. A driving signal input from the LED chip is applied to the LED chips 2A, 2B, and 2C, and each LED chip emits light to realize an image. The circuit board may include a circuit, for example, a thin film transistor, configured to independently drive sub-pixels, for example, the LED chips 2A, 2B, and 2C, disposed in each pixel region 2 .

In each pixel area 2 of the circuit board 20, at least three LED chips 2A, 2B, and 2C emitting monochromatic light of red, green, and blue are arranged, and the LED is illuminated by a signal applied from the outside. Lights of red, green and blue colors are emitted from the chip to display an image.

Before or after the panel cutting, the plurality of LED chips 2A, 2B, and 2C may be mounted in a process separate from the TFT array process. That is, the thin film transistor and various wirings are formed by a photo process, but the LED chips 2A, 2B, and 2C may be mounted through a separate bonding process or a reflow process. Here, the configuration of the circuit board having the thin film transistor and the plurality of LED chips 2A, 2B, and 2C may be defined as a light source module. The circuit board may include the LED chips 2A, 2B, and 2C and a thin film transistor unit 50 connected thereto. The circuit board may be formed of a transparent support member 1 such as glass, and the TFT unit 50 may be disposed on one surface (or upper surface) of the support member 1 . The light generated from the LED chips 2A, 2B, and 2C may be emitted through the other surface (or lower surface) Sb of the support member 1 , thereby serving as a display device.

Hereinafter, a process for manufacturing a display panel and a display device will be described in detail.

As shown in FIG. 4 , blocks D1 , D2 , and D3 having previously provided LED chips 2A, 2B, and 2C are prepared. In each of the blocks D1, D2, and D3, 10 or more or 100 or more LED chips may be arranged at a preset interval. Here, the preset interval may be an interval for mounting the LED chips on the display panel, and may be arranged to be arranged on different positions.

Each of the blocks D1, D2, and D3 is, for example, a first block D1 in which first LED chips 2A are arranged, a second block D2 in which second LED chips 2B are arranged, and a third A third block D3 in which the LED chips 2C are arranged may be included. The first LED chips 2A may emit red light, the second LED chips 2B may emit green light, and the third LED chips 2C may emit blue light. A plurality of first to third LED chips 2A, 2B, and 2C may be arranged at preset intervals in horizontal and vertical directions in each of the first to third blocks D1, D2, and D3.

Here, the process of attaching and packaging the first LED chip 2A will be described, and the description of the second and third LED chips 2B and 2C will be omitted or refer to the description of the first LED chip 2A. do it with

When the first LED chips 2A are arranged on the support frame 312 of the support body 310 to form the first block D1, a conductive carrier connected to the support shaft 230 of the carrier body 250 ( 210) is aligned on the first block D1. Here, the electrodes K1 and K2 may be disposed on the upper portions of the first LED chips 2A, and a member or sheet emitting light may be disposed on the lower portions. Here, the light emitting member may be a transparent layer or a growth substrate.

When the lower surface of the conductive carrier 210 is moved and positioned in a vertical downward direction on the upper surface of the first block D1, the first LED chips 2A are attached to the conductive carrier 210 as shown in FIG. In addition, the conductive carrier 210 to which the first block D1 is attached may be moved in a vertical upward direction or the support body 310 may be moved in a different direction. Here, the lower portion of the conductive carrier 210 is provided with an elastic member 215 to reduce the impact transmitted to the first LED chip (2A) when the conductive carrier 210 is moved in the vertical downward direction. and the first LED chip 2A or other LED chips may be attached thereto.

Electrodes K1 and K2 disposed on the first LED chip 2A are attached to the conductive carrier 210 , and the electrodes K1 and K2 may include at least two electrodes. The electrodes K1 and K2 may be pads of the first LED chip 2A. A lower surface of the first LED chip 2A may be exposed.

Here, an example of an LED chip will be described with reference to FIG. 6 . At least one or both of the LED chips 2A, 2B, and 2C may include a light-transmitting substrate 101 , light-emitting structures 102 , 103 , 104 on the light-transmitting substrate 101 , and electrodes K1 and K2 disposed on the light-emitting structures 102 , 103 and 104 . ) may be included. A reflective layer 107 may be included between the uppermost layer of the light emitting structures 102 , 103 , and 104 and the electrodes K1 and K2 .

The light-transmitting substrate 101 is a growth substrate or a transparent layer, and may be formed of an insulating material or a semiconductor material. The light-transmitting substrate 101 may be selected from a group including, for example, a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, and may be removed.

The light emitting structures 1021 , 103 , and 104 may be formed of a compound semiconductor. The light emitting structures 102 , 103 , and 104 may be formed of, for example, a group 2-6 or group 3-5 compound semiconductor. For example, the light emitting structures 1021 , 103 , and 104 include at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). can be provided.

The light emitting structures 102 , 103 , and 104 include a first conductivity type semiconductor layer 102 connected to the first electrode K1 , a second conductivity type semiconductor layer 104 connected to the second electrode K2 , and the first and first The active layer 103 may be disposed between the two conductive semiconductor layers 102 and 104 . The first and second conductivity-type semiconductor layers 102 and 104 may be implemented with at least one of a group 3-5 or group 2-6 compound semiconductor. The first and second conductivity-type semiconductor layers 102 and 104 include, for example, at least one selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. can do. The first conductivity-type semiconductor layer 102 may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The second conductivity-type semiconductor layer 104 may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. As another example, the first and second conductivity-type semiconductor layers 102 and 104 may be p-type and n-type semiconductor layers.

The active layer 103 may be implemented with a compound semiconductor. The active layer 103 may be embodied, for example, by at least one of a group 3-5 or group 2-6 compound semiconductor. When the active layer 103 is implemented as a multi-well structure, the active layer 103 may include a plurality of well layers and a plurality of barrier layers arranged alternately, and may include InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN. , InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, and at least one selected from the group consisting of InP/GaAs.

The reflective layer 107 may be formed of a metal or non-metal material, and may include a single layer or multiple layers. As another example, the reflective layer 107 may include a DBR structure having different refractive indices.

In each of the LED chips 2A, 2B, and 2C, the first and second electrodes K1 and K2 may be disposed on the LED chips 2A, 2B, and 2C. Here, the LED chips 2A, 2B, and 2C may be provided as flip chips, vertical chips, or horizontal chips depending on the positions of the first and second electrodes K1 and K2. The first and second electrodes K1 and K2 are Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, Pt, It contains at least one or two or more of Ru and Rh, and may be formed as a single layer or multiple layers. Since the first and second electrodes K1 and K2 have a Ti/Ag stack structure, the Ag layer may be applied to prevent oxidation of Ti, and adhesive strength according to a thermal process may be increased. A protective layer, an insulating layer, or an insulating reflective layer may be further disposed in the region between the first and second electrodes K1 and K2 or on the surface of the light emitting structure, but is not limited thereto. The structure of the LED chips 2A, 2B, and 2C is an example, and other semiconductor layers may be further disposed between each layer, but is not limited thereto.

A layer or film having a wavelength conversion material such as a phosphor may be disposed under the light-transmitting substrate 101 of the LED chips 2A, 2B, and 2C. The phosphor may include at least one of yellow, green, red, and blue. For example, the phosphor may wavelength-convert the light emitted from the LED chips 2A, 2B, and 2C into red, green, yellow, and blue light. When a phosphor layer is further disposed on the lower surface of each LED chip, it may be adhered to the transparent support member with an adhesive layer.

Referring to FIG. 7 , the conductive carrier 210 to which the first LED chips 2A are attached respectively corresponds to or faces the auxiliary substrate 353 . Here, the auxiliary substrate 353 is disposed on the upper body 351 rotated by the rotation shaft 350 , and may be rotated together with the upper body 351 .

An adhesive layer B0 may be formed on a surface or an upper surface of the auxiliary substrate 353 . The adhesive layer B0 may include a transparent material. The adhesive layer B0 may be a transparent adhesive material. The adhesive layer B0 may be made of a transparent inorganic oxide-based material, and in this case, it is possible to reduce discoloration due to light. The adhesive layer B0 may include an adhesive material, a heat dissipation material having thermally conductive nanopowder, and/or a scattering prevention material. The adhesive layer B0 may include a thermally conductive inorganic filler, or a carbon material or a ceramic material. The adhesive layer B0 is another material, and may be a transparent material of an organic or inorganic material. The thickness of the adhesive layer B0 may be 2 μm or less, for example, 0.2 μm to 2 μm. The adhesive layer B0 may be provided with a uniform thickness over the entire region on the auxiliary substrate 353 . The transmittance of the adhesive layer B0 may be 95% or more, for example, 98% or more. The adhesive layer B0 may include an oxide material having at least one of Ag, Ti, Al, and Ti.

Here, referring to FIG. 8 , after dispensing a liquid adhesive material on the auxiliary substrate 353 , it may be formed in the form of spin coating. At this time, since the auxiliary substrate 353 is rotated, the thickness of the adhesive layer B0 may be provided with a uniform thickness. When a separate adhesive layer is formed on the LED chip, a thickness deviation may occur, and there is a problem in that a difference in adhesive strength with each LED chip is generated. The auxiliary substrate 353 may be made of glass or plastic. The liquid adhesive layer B0 may be deposited on the auxiliary substrate 353 by a spray method, or may be formed by a dipping method, a slit method, a roll coating method, or a printing method. The adhesive material may have a viscosity of 1 CP or more, for example, about 1 to 5 CP.

When the adhesive layer B0 is coated on the auxiliary substrate 353 , the first block D1 is disposed under the conductive carrier 210 in the stamping area A5 disposed on the auxiliary substrate 353 . The lower surfaces of the LED chips disposed on the .

7 and 11 , the conductive carrier 210 is moved vertically downward or in the direction of the auxiliary substrate 353 , and the first LED chip 2A is brought into contact with the auxiliary substrate 353 . , moving in the vertical direction. In this case, the adhesive layer B0 may be attached or adhered to the lower surface of the first LED chip 2A in the form of a stamp. That is, the adhesive layer B0 may be formed on the transparent substrate of each of the first LED chips 2A through the stamping process of the first LED chips 2A (see FIG. 11 ).

11 , the adhesive layer B10 may be formed to have a uniform thickness on the transparent substrate disposed under each of the first LED chips 2A. In addition, the width or area of the adhesive layer B10 disposed on the lower surface of each of the LED chips 2A, 2B, and 2C is the same as the width or area of the lower surface of the LED chips 2A, 2B, 2C, or the lower surface width or It may be less than or equal to 120% of the area.

With reference to FIG. 9, a process for picking up or separating an LED chip using a conductive carrier in the present invention will be described. The conductive carrier 210 may include an elastic member 215 at a lower portion and may be a support plate 211 . The elastic member 215 may include a conductive elastic member 212 , a dielectric layer 214 and an electrode layer 213 between the support plate 211 and the conductive elastic member 212 . The dielectric layer 214 is formed under the support plate 211 and may support the dielectric layer 214 . The support plate 211 may be a metal material or a non-metal material, or may include, for example, an aluminum material. The dielectric layer 214 may include a non-metal material, for example, at least one of polyimide, polyester, ceramic, tantalum, and a silicon film. The ceramic material is an amorphous ceramic material Al ₂ O ₃ , Y ₂ O ₃ , ZrO ₂ , AlC, TiN, AlN, TiC, MgO, CaO, CeO ₂ , TiO ₂ , BxCy, BN, SiO ₂ , SiC, YAG, In _{the group consisting of AlF 3} , one type or two or more types are each mixed and used. The thickness of the dielectric layer 214 may be 1 mm or less, for example, in the range of 0.1 to 1 mm.

The electrode layer 213 may be disposed between the dielectric layer 214 and the conductive elastic member 212 . An adhesive layer 216 may be disposed around the electrode layer 231 to bond the dielectric layer 214 and the elastic member 212 to each other. The adhesive layer 216 may be a material of the dielectric layer 214 or a material such as silicone or epoxy.

The electrode layer 213 may receive power through the electrode line 218 and may include at least one or two or more of a conductive metal, for example, tungsten, molybdenum, titanium, silver, and copper. In the electrode layer 213 , electrode patterns in the form of a mesh are arranged, and may be uniformly distributed over the entire area. The thickness of the electrode layer 213 may be 50 micrometers or less, for example, in the range of 15 to 50 micrometers. The electrode layer 213 may be formed as a single layer or a multilayer.

The conductive elastic member 212 may include a conductive material having elasticity, and may be a polymer having viscosity and elasticity. The conductive elastic member 212 may be rubber, a thermoplastic polymer, or a thermosetting polymer. The conductive elastic member 212 may include a metal such as Ni, Cu, Ag, Al, or a metal oxide powder or a filler such as carbon black therein, and may function as an electrically conductive polymer.

Referring to FIG. 9 with reference to FIGS. 4 and 7 , after the conductive carrier 210 is brought into contact with the LED chips 2A, 2B, and 2C, power is supplied through the electrode line 218 . When power is supplied to the electrode layer 213, an electrostatic attraction is generated between the dielectric layer 214 and the LED chips 2A, 2B, 2C or the conductive elastic member 212, and as time cures, the amount of charge decreases Each can be accumulated. Accordingly, the LED chips 2A, 2B, and 2C can be picked up on the lower surface of the conductive carrier 210 or the lower surface of the conductive elastic member 212 without a separate adhesive, and the conductive elastic member 212 in the pickup process. can reduce or buffer the pressure applied to the LED chips 2A, 2B, and 2C. Through this process, the pick-up process can be performed in the process of FIG. 4, and after being picked up, the process of stamping the adhesive layer B0 to each LED chip 2A, 2B, and 2C can be performed as shown in FIG. 11. have. The power may be a DC voltage.

11 and 12 , the first LED chip 2A having the adhesive layer B10 disposed on the lower portion of the conductive carrier 210 may correspond to or face the support member 1 or the circuit board. have. At this time, the positions at which the plurality of first LED chips 2A are mounted on the circuit board 20 are set in advance, so that the conductive carrier 210 on which the first LED chips 2A is picked up is held by the support member 1 . ) or it can be aligned on the circuit board.

In a state in which the conductive carrier 210 is vertically moved and positioned on the circuit board 20 , the first LED chips 2A attached to the conductive carrier 210 are placed on the support member 1 . It can be placed on (Release) and adhered with an adhesive layer (B10).

The support frame BS on which the support member 1 is disposed is a support member, and a predetermined temperature, that is, 250 degrees or less, for example, 100 to 250 degrees, is maintained to facilitate curing of the transparent adhesive layer B10. can be pretend By providing a constant temperature deviation at this time, crack prevention in the resin formation process mentioned later can be suppressed.

As shown in FIG. 13 , a plurality of pads 61 and 63 may be arranged on the periphery of or outside the region where the LED chips 2A, 2B, and 2C are to be disposed on the support member 1 . That is, the pads 61 and 63 may be connected to the electrodes of each of the respective LED chips 2A, 2B, and 2C. The plurality of pads 61 and 63, the plurality of first LED chips 2A, the plurality of second LED chips 2B, and the plurality of third LED chips 2C are provided on the support member 1 . It may be disposed on the upper surface. The plurality of pads 61 and 63 may include a first pad 61 and a second pad 63 and may be alternately repeated.

Accordingly, the first LED chips 2A may be arranged on the support member 1 or the circuit board as shown in FIG. 13 . The adhesive layer B10 may be respectively disposed between the upper surface of the support member 1 and the first LED chip 2A. Here, the present invention can attach the LED chips 2A, 2B, and 2C to the adhesive layer B10 without performing a process of forming a separate solder on the pads 61 and 63 on the support member 1 . . Here, since the LED chip is attached to the circuit board or the support member by a natural unloading method rather than a pressurization method, there is no damage to the LED chip and curing the adhesive layer (B10) by heat treatment after loading, the process This can be simplified. In addition, a portion of the adhesive layer B10 may extend to the outer side surfaces of the LED chips 2A, 2B, and 2C by the loading process.

By repeatedly performing the above process, the second LED chip 2B of each second block and the third LED chip 2C of the third block shown in FIG. 4 are further aligned on the circuit board 20, respectively. can give That is, after the conductive carrier 210 is placed on the support member 1 , the LED chips 2A, 2B, and 2C for each block are attached to the upper surface of the support member 1 with an adhesive layer B10 , and then, the It will cut off the power supply. At this time, the adhesive layer B10 is adhered to the upper surface of the support member 1 by a predetermined pressure, so that the LED chips for each block can be arranged, and the flow of the LED chips can be suppressed when attached. When the power supply is cut off, 0V may be charged to the conductive elastic member 212 . That is, when the same voltage is applied and then blocked, a voltage of 0V is applied due to the conductive material of the conductive elastic member 212 , so that the LED chips can be separated from the conductive carrier 210 . Since the residual charge is easily discharged by the conductive elastic member 212, when a voltage is applied, the adsorption force can be increased, and when the power is turned off, the charged amount can be discharged without affecting the LED chip.

Here, FIG. 25 is a graph comparing the adsorption force for adsorbing the LED chips, the dechucking force for releasing, and the adhesion force of the adhesive layer. The holding force of the upper conductive carrier (ESC) and the lower conductive carrier (ESC (backplane)) In the first step TA1, when the plurality of LED chips are attached to the support member, the adsorption force moves to the lower conductive carrier, and in the second step TA2, the upper conductive carrier is dechucked while the adsorption force moves to the lower part. This prevents the LED chips mLED from being separated from the top, and in the third step TA3 , the lower conductive carrier can adhere the LED chips uniformly while maintaining the horizontal correction of the LED chips while the adhesive layer is cured.

On the other hand, as in the comparative example of FIG. 10 , the pickup or separation method using the electrostatic carrier 210A is a device for accumulating charges similarly to that of a capacitor, in which two parallel metal plates 210B, Electrodes 1 and 2 are used. When a voltage is applied in the state of facing each other, the electrode plate to which the + electrode is applied becomes positively charged, and the electrode plate to which the - electrode is applied becomes to have a - charge. At this time, a force is generated between the two parallel plates that are charged. This is called electrostatic force. The electrostatic carrier 210A is a place where the substrate is placed inside the vacuum chamber. It has a function of fixing the electrodes (Electrode 1, Electrode 2), and when + or - electricity is applied, the opposite potential is charged to the object 101A, and the principle that a pulling force is generated by the charged potential. will use However, it is a structure in which the object 101A is fixed by the action of an even electrostatic force over the entire contact surface with the object 101A having the LED chip. However, when the power is turned off, the charges applied to the two dielectric layers are slowly discharged, and there is a problem that the LED chips are affected due to the large discharge area. In the embodiment of the present invention, the conductive elastic member 212 is disposed under the conductive carrier to protect the LED chip, while blocking the problem of residual charges affecting the LED chip.

14, in each pixel region 2 of the circuit board 20, at least three LED chips 2A, 2B, and 2C emitting monochromatic light of red, green, and blue are arranged, and are applied from the outside. Lights of red, green, and blue colors are emitted from the LED chip by the signal to display an image. The plurality of LED chips 2A, 2B, and 2C may be mounted in a process separate from the TFT array process of the circuit board 20 . That is, the LED chips 2A, 2B, and 2C disposed on the circuit board 20 may be packaged and electrically connected through a process to be described later. The boundary region P may be a region defined by a plurality of gate lines and data lines, and may be connected to the plurality of LED chips 2A, 2B, and 2C. Here, the thicknesses of the plurality of LED chips 2A, 2B, and 2C may be the same or the top surface height may be the same. When there is a difference in thickness between the plurality of LED chips 2A, 2B, and 2C, the top surface heights of different types of LED chips 2A, 2B, and 2C may be equalized by using the adhesive layer B10.

Hereinafter, a packaging process and a wiring process of the LED chips will be described.

As shown in (A) and (B) of FIG. 15A , when the LED chips 2A, 2B, and 2C are attached to the support member 1 with an adhesive layer B10, the upper portions of the LED chips 2A, 2B, and 2C are The electrodes K1 and K2 may be disposed. The resin member 151 molds the upper portion of the support member 1 . The resin member 151 molds the first to third LED chips 2A, 2B, and 2C. The resin member 151 may cover the surfaces of the LED chips 2A, 2B, and 2C and the pads 61 and 63 . The resin member 151 may cover the surface of the TFT part. The resin member 151 may include a material that absorbs, reflects, or blocks the light emitted through the LED chips 2A, 2B, and 2C. The resin member 151 may prevent light leakage. The resin member 151 may include at least one of a binder resin, a photopolymerization initiator, a black pigment, and a solvent. For example, the binder resin may include an epoxy resin, an acrylic resin, a polyimide resin, a panel resin, a silicone resin, or a car It may include a dog-based resin material. The resin member 151 may be made of an epoxy-based black material, and may include a light-shielding, reflective, or absorptive additive therein. The resin member 151 may include a highly refractive inorganic spray, for example, TiO ₂ sol, SrTiO ₃ sol, ZnS, ZnSe, potassium bromide, AgCl, MgO, cesium iodide, cesium bromide, CaCO ₃ , Phosphor. porous tribromide, phenyltrichloride, trichroman-4-one, thionyl bromide, ZnO ₂ , CeO ₂ , ITO sol, Ta ₂ O ₅ , Ti ₂ O ₅ , Ti ₂ O ₃ , ZrO ₂ , Br ₂ , CS ₂ , ZrO ₂ -TiO ₂ sol, and SiO ₂ -Fe ₂ O ₃ It may include at least one selected from the group consisting of compounds.

Here, the outer surface of the resin member 151 may include a concave first recess R0, and the first recess R0 may include a curved surface and/or an inclined surface. That is, the surface of the first recess R0 may be formed so as not to be provided with an abruptly curved surface or a stepped surface.

The resin member 151 is disposed on top of the LED chips 2A, 2B, and 2C, on the sides of the LED chips 2A, 2B, and 2C, between adjacent LED chips 2A, 2B, and 2C, between the LED chips 2A, 2B. , 2C) and the pads 61 and 63 and between the electrodes K1 and K2, respectively. Here, the minimum distance between the LED chips 2A, 2B, and 2C and the pads 61 and 63 may be provided in a range of 2 μm or more, for example, 2 μm to 5 μm.

As shown in (B) (C) of FIG. 15A , when the resin member 151 is formed, the electrodes K1 and K2 and the pads 61 and 63 of the LED chips 2A, 2B, and 2C are opened. do. Here, the opening process of the electrodes K1 and K2 and the pads 61 and 63 may be performed as a hard baking process through, for example, an exposure process using a mask, a developing process, and the like. The electrodes K1 and K2 and the pads 61 and 63 may be exposed through the regions R1 , R2 , R3 , and R4 in which the resin member 151 is removed.

As shown in (c) (d) of FIG. 15 , when the electrodes K1 and K2 and the pads 61 and 63 are exposed, the conductive connection layer 160 is formed on the surface of the resin member 151 . . The conductive connection layer 160 may be formed on the electrodes K1 and K2 and the upper surfaces of the pads 61 and 63 . In this case, the conductive connection layer 160 may be formed on a path for connecting the electrodes K1 and K2 and the pads 61 and 63 , and may be formed as a single layer or multiple layers. The conductive connection layer 160 may include at least one of Al, Si, Au, Ag, Pt, Cr, Mo, Ta, and Cu. The forming process of the conductive connection layer 160 may be formed through a sputtering process.

As shown in (D) of FIG. 15A and (E) (B) (G) of FIG. 15B , the coating layer 170 is formed on the surface of the conductive connection layer 160 . The coating layer 170 may be formed using a photoresist. The coating layer 170 may be partially removed through development and etching processes to separate the conductive connection layer 160 into the first connection part 161 and the second connection part 162 . Thereafter, the coating layer 170 is removed.

The process for forming the first and second connection parts 161 and 162 may be formed through a sputtering process using a metal, a photoresist (PR) coating process, an exposure process, and a developing process.

The first connector 161 may connect the first electrode K1 and the first pad 61 , and the second connector 162 may connect the second electrode K2 and the second pad 63 . . On the resin member 151 covering each of the LED chips 2A, 2B, and 2C, the first and second connecting portions 161 and 162 may be separated from each other.

As shown in (h) of Figure 15b, a passivation layer 155 is formed. The passivation layer 155 may be formed on the upper surfaces of the first and second connection parts 161 and 162 and the exposed surface of the resin member 151 . The passivation layer 155 may be a layer made of a material such as silicon or epoxy, or an insulating layer made of a heat dissipation material.

Referring to FIG. 16 , the resin member 151 may be adhered to the side surfaces of the LED chips 2A, 2B, and 2C, for example, the side surface of the light emitting structure 105 , the side surface of the light-transmitting substrate 101 , the electrode ( It can be attached to the side of K1, K2). In addition, the resin member 151 may be adhered to the upper surfaces of the LED chips 2A, 2B, and 2C, and may be disposed higher than the upper surfaces of the electrodes K1 and K2. The resin member 151 may be adhered to the protrusion B11 of the adhesive layer B10. The adhesive layer B10 has a minimum thickness T1 of 1 μm or less, for example, 0.2 μm to 0.5 μm, and adheres the lower surfaces of the LED chips 2A, 2B, and 2C to the upper surface of the support member 1 , It can prevent the transmittance|permeability from falling.

The protrusion B11 is adhered to the side surface of the light-transmitting substrate 101 , and adhesion to the resin member 151 may be increased. Accordingly, the resin member 151 may be adhered to and supported around the LED chips 2A, 2B, and 2C to prevent flow.

18 , the resin member 151 is sealed on the first to third LED chips 2A, 2B, and 2C, and the first electrode K1 of each LED chip 2A, 2B, 2C and the TFT part are formed. A first connection part 161 may be connected between the first pads 61 , and a second connection part 162 may be connected between the second electrode K2 and the second pad 63 of the TFT unit. Accordingly, the first to third LED chips 2A, 2B, and 2C may be electrically connected to the TFT unit and selectively driven.

When the plurality of LED chips 2A, 2B, and 2C are selectively driven, the emitted light may be emitted to the other surface through the transparent support member 1 . In this case, the resin member 151 disposed around the LED chips 2A, 2B, and 2C absorbs or blocks the side exposure light, thereby increasing the visibility of the light.

Referring to FIG. 18 , a circuit board 20 having a thin film transistor and a plurality of LED chips 2A, 2B, and 2C disposed on the circuit board 20 may be defined as a light source module. The circuit board 20 may include a thin film transistor unit 50 connected to the LED chips 2A, 2B, and 2C. The circuit board 20 may include a transparent support member 1 such as glass and a pad or line pattern thereon. The thin film transistor unit 50 may be disposed on one surface or an upper surface of the support member 1 .

In the circuit board 20 , the thin film transistor unit 50 includes a gate electrode 51 , a semiconductor layer 53 , a source electrode 55 , and a drain electrode 57 . A gate electrode 51 is formed on the circuit board 20 , a gate insulating layer 49 is formed over the entire area of the circuit board 110 to cover the gate electrode 51 , and a semiconductor layer 53 is formed with the gate It is formed on the insulating layer 49 , and a source electrode 55 and a drain electrode 57 are formed on the semiconductor layer 53 .

The gate electrode 51 may be formed of a metal such as Cr, Mo, Ta, Cu, Ti, Al or an Al alloy or an alloy thereof, and the gate insulating layer 49 is made of an inorganic insulating material such as SiOx or SiNx. It may be made of a single layer made of or a plurality of layers made of SiOx and SiNx. The semiconductor layer 53 may be formed of an amorphous semiconductor such as amorphous silicon, or an oxide semiconductor such as _{indium gallium zinc oxide (IGZO), TiO 2} , ZnO, WO ₃ or SnO _{2 .} When the semiconductor layer 53 is formed of an oxide semiconductor, the size of the thin film transistor (TFT) may be reduced, driving power may be reduced, and electric mobility may be improved. Of course, in the present invention, the semiconductor layer of the thin film transistor is not limited to a specific material, and all kinds of semiconductor materials currently used in the thin film transistor may be used.

The source electrode 55 and the drain electrode 57 may be formed of a metal such as Cr, Mo, Ta, Cu, Ti, Al, or an Al alloy or an alloy thereof. In this case, the drain electrode 57 may be used as a first connection electrode for applying a signal to the LED chips 2A, 2B, and 2C. On the other hand, in the drawing, the thin film transistor unit 50 is a bottom gate type thin film transistor, but the present invention is not limited to such a specific structure of a thin film transistor, but various structures such as a top gate type thin film transistor. A thin film transistor may be applied.

A second connection electrode 59 is formed under the first insulating layer 41 . At this time, the second connection electrode 59 may be formed of a metal such as Cr, Mo, Ta, Cu, Ti, Al or Al alloy or an alloy thereof, and the second connection electrode 59 (ie, a thin film transistor ( It can be formed by the same process as the drain electrode 57) of the TFT).

A first insulating layer 41 is formed on the circuit board 20 on which the thin film transistor unit 50 is formed, and LED chips 2A, 2B, and 2C are disposed in the opening of the first insulating layer 41 of the light emitting region. . In this case, in the drawing, a portion of the first insulating layer 114 is removed and the LED chips 2A, 2B, and 2C may be arranged on the removed area. The first insulating layer 41 may be formed of an organic layer such as a polyimide (PI) film or photoacrylic, or may have a multilayer structure such as an inorganic layer/organic layer or an inorganic layer/organic layer/inorganic layer.

First and second pads 61 and 63 may be disposed in the area where the first insulating layer 41 is opened. The first pad 61 may be disposed on the first connection electrode 57 or may be a part of the material of the first connection electrode 57 . The second pad 63 may be disposed on the second connection electrode 59 or may be a part of the second connection electrode 59 . Both ends P2 and P4 of the first connection part 161 are connected to the first electrode K1 of each LED chip 2A, 2B, and 2C and the first pad 61 of the TFT part, and the second electrode K2 Both ends P1 and P3 of the second connection unit 162 may be connected to the second pad 63 of the TFT unit. The first and second connection electrodes 57 and 59 may be formed on the upper surface of the support member 1 . As another example, the resin member 151 and the adhesive layer B10 may be disposed in a region from which the gate insulating layer 49 formed on the upper surface of the support member 1 is removed. As another example, the gate insulating layer 49 may extend on the lower surface of the resin member 151 and the adhesive layer B10 .

The first and second pads 61 and 63 may include at least two or more of Ti, Ni, Pt, TiN, Mo, Al, W, Cu, Ag, and Au. The first and second pads 61 and 63 may be formed in multiple layers. Thereafter, when the LED chips for each color are mounted on the display panel, a cleaning process may be performed, and an abnormal portion such as flux may be removed through the cleaning process.

At least one or both of the resin member 151 and the passivation layer 155 may be further extended on the surface of the TFT unit 50 to protect the surface of the TFT unit 50 .

19, when the passivation layer 155 is formed, a metal layer 192 and an insulating member 194 are formed in the boundary region P between the LED chips 2A, 2B, and 2C, and then, insulation A part of the member 194 is opened to form the conductive portion 196 . In this case, the conductive part 196 may include an anisotropic conductive film (ACF), and the conductive part 196 may be connected to the driving substrate 190 . The driving substrate 190 may be selectively connected to each of the LED chips 2A, 2B, and 2C and the TFT unit 50 in FIG. 18 , and may be connected to a component such as a driver IC. As shown in FIG. 20 , a plurality of the conductive parts 196 may be spaced apart from each other, and may be connected to other wirings or patterns through the contact parts 192 . The insulating part 194 may be a layer of a light blocking material, a reflective material, or an absorbing material. The driving board 190 may include a PCB or FPCB made of a resin material. A heat dissipation member is further disposed on the upper portion of the support member 1 to effectively dissipate heat.

21 (A), at least one of the passivation layer 155 and the resin member 151 may include an extension portion E10 extending to the upper surface adjacent to the side surface Sc of the support member 1 . can Accordingly, the extension portion E10 may protect the edge pattern 31 . Also, as shown in (B), when the outer line of the support member 1 is re-cut, a side coating layer C11 may be formed by a laser cutting process, and the side coating layer C11 is formed on the extension part E10. ) can be in contact with The distance D11 from the edge pattern 31 to the side surface Sc may be 15 μm or more, for example, in the range of 15 μm to 50 μm, to protect the edge pattern 31 through the extension part E10 . can do.

As shown in (A) of FIG. 22 , when any one of the LED chips 2A, 2B, and 2C is defective (eg, 2A), the same type of LED chip 2D may be replaced. At this time, the defective LED chip is exposed through the point laser process, the adhesive layer B10 is melted, and the pickup is removed and mounted as a new LED chip 2D. At this time, since the adhesive layer is disposed on the lower surface of the new LED chip 2D, it can be adhered to the support member 1 . Thereafter, it may be packaged and electrically connected through the process disclosed above.

As shown in (B) of FIG. 22 , when a defect of the LED chip occurs in one pixel area, when the dummy areas A11, A12, and A13 are further formed around the area where the LED chips are disposed, the dummy area A11 , A12, A13) may be partially opened, and packaging and electrical connection processes may be performed as in the above process, thereby replacing the defective LED chip with a new LED chip 2D.

As shown in FIG. 23 , each pixel area has a pair of first to third LED chips 2A, 2B, and 2C, is divided into pixel boundary areas P1 and emits light through the lower portion of the support member 1 . can 24 , a group of two pairs of first to third LED chips 2A, 2B, and 2C or a dummy LED chip area may be further disposed in each pixel area.

As described above, although described with reference to the preferred embodiment of the present invention, those skilled in the art can variously modify and change the present invention within the scope without departing from the spirit and scope of the present invention described in the claims below. You will understand that it can be done.

In addition, the reference numbers described in the claims of the present invention are only described for clarity and convenience of explanation, and are not limited thereto, and in the process of describing the embodiment, the thickness of the lines shown in the drawings or the size of components, etc. may be exaggerated for clarity and convenience of explanation, and the above-mentioned terms are terms defined in consideration of functions in the present invention, which may vary depending on the intention or custom of a user or operator, so interpretation of these terms should be made based on the content throughout this specification.

1: support member
2: Pixel area
2A, 2B, 2C: LED chip
11,12,13,14: display panel
20: circuit board
41: first insulating layer
50: thin film transistor unit
61,63: pad
101: light-transmitting substrate
102: first conductive type semiconductor layer
103: active layer
104: second conductivity type semiconductor layer
210: conductive carrier
351: upper body
353: auxiliary board
BO, B10: adhesive layer
D1,D2,D3: block
K1, K2: electrode
151: resin member
155: passivation layer
161,162: connection part

Claims (1)

transparent support member;
a thin film transistor (TFT) unit disposed on the upper surface of the support member and having pads;
a plurality of LED chips disposed on the upper surface of the support member and having electrodes thereon;
a transparent adhesive layer for bonding the support member and each of the plurality of LED chips;
a resin member covering the plurality of LED chips; and
It is disposed on the resin member and includes a plurality of connection parts for connecting the electrode and the pad,
The plurality of LED chips form a pixel region having first to third LED chips emitting different colors,
The light emitted from the plurality of LED chips is emitted through a lower surface of the support member through the support member.

Images