KR20170050371A - Display device - Google Patents

Abstract

Provided is a display device including a light emitting diode (LED) die. The display device comprises: a driving device disposed on a substrate; a first electrode electrically connected to the driving device; a wire spaced apart from the driving device; a second electrode electrically connected to the wire; a bank disposed to define a light emitting region on the first and second electrodes; and the LED die disposed in the light emitting region, and including p and n electrodes electrically connected to the first and second electrodes, respectively. Accordingly, the total weight of the display device to provide an extra-large screen can be reduced and manufacturing costs thereof can be also reduced by placing the LED die in order to be electrically connected to an electrode on a backplane on which a thin film transistor (TFT) is disposed in a display device and lighting the LED die.

Description

Display device {DISPLAY DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device, and more particularly to a display device in which an LED die is disposed on a backplane on which a thin film transistor is disposed.

BACKGROUND ART [0002] Liquid crystal displays (LCDs) and organic light emitting displays (OLEDs), which are widely used until now, have been increasingly used.

The liquid crystal display device and the organic light emitting display device are capable of providing a high-resolution screen and are thin and light. Therefore, the liquid crystal display device and the organic light emitting display device are widely applied to small-sized screens of everyday electronic devices such as mobile phones and notebooks. It is gradually expanding.

On the other hand, the liquid crystal display device and the organic light emitting display device are disadvantageous in that they are not easily applied to a display device having a very large screen such as an outdoor electric signboard. Specifically, the liquid crystal display device and the organic light emitting display device can not be manufactured as a very large screen as one panel. Accordingly, when a very large screen is manufactured using a liquid crystal display device and an organic light emitting display device, a plurality of liquid crystal display panels or a plurality of organic light emitting display panels are required to be arranged in a tile form. Particularly, in the case of an organic light emitting diode display, the organic light emitting diode is not suitable for a very large screen which can be widely used outdoors because the organic light emitting diode is made of an organic material and is very vulnerable to moisture or oxygen and has a short lifetime and high defect rate due to impact or external environment .

As an alternative to this, a display device including a light emitting diode (LED) has been proposed. The LED is made of an inorganic material, not an organic material, and therefore has excellent reliability and a longer life than a liquid crystal display device or an organic light emitting display device. In addition, the LED is suitable for a very large-sized screen because it not only has a fast lighting speed but also low power consumption, high impact resistance and excellent stability and can display a high-brightness image.

Accordingly, LED devices are widely used as a display device for providing a very large screen.

A display device for providing a very large-sized screen widely used today includes a plurality of LED packages which are packaged with a driving circuit element for driving an LED die on the rear surface of a plurality of LED dies emitting red, green and blue light, Are placed on a very large substrate, and then are manufactured through a cabinet process for supporting them.

However, since a display device for providing a general very large-sized screen has a structure in which a driving circuit element is packaged on the rear surface of each of a plurality of LED dies, a plurality of packaged LED packages are arranged on a very large substrate, , The overall weight of the display device for providing a very large screen becomes very heavy. In addition, since a display device for providing a general large-sized screen has a heavy weight, a frame for supporting the display device must be made of an expensive and hard material, and thus a manufacturing cost of the display device is increased .

Also, the LED cabinet process including the process of connecting the LED package to the printed circuit board (PCB) is an expensive process. Since the number of LED packages necessary for realizing a very large screen in the display device is more than tens of millions, .

The inventors of the present invention have recognized the above-mentioned problems and have found that by disposing an LED die before an LED packaging process on a substrate on which a thin film transistor (TFT) to be applied to a liquid crystal display or an organic light emitting display is arranged, The present inventors have invented a display device including a new structure of an LED die capable of reducing the manufacturing cost and reducing the overall weight of the display device since the number of manufacturing steps can be reduced.

On the other hand, a commonly used LED package has a size of several mm x several mm. Therefore, when a display device is implemented using such an LED package, the size of one pixel can not be smaller than the size of the LED package, so that there is a limit to implement a high-resolution display device using the LED package.

Accordingly, the inventors of the present invention have recognized the above-mentioned problems, and have found that it is possible to realize a high-resolution display device by applying an LED die having a size of several tens of micrometers to several tens of micrometers or a size of several hundreds of micrometers to several hundreds of micrometers A display device including an LED die of a new structure is invented.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a display device including an LED die capable of reducing the overall weight of the display device and lowering the manufacturing cost while realizing a very large screen using an LED die.

Another object of the present invention is to provide a display device including an LED die capable of improving display quality even in a very large screen by using an LED die to realize a high resolution display.

The problems of the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided a display device including: The display device includes a driving element disposed on a substrate, a first electrode electrically connected to the driving element, a wiring spaced apart from the driving element, a second electrode electrically connected to the wiring, a light emitting region defined on the first electrode and the second electrode, And an LED die disposed in the light emitting region and including a p-electrode and an n-electrode electrically connected to the first electrode and the second electrode, respectively. Therefore, the display device according to the embodiment of the present invention can reduce the weight of the very large display device and reduce the manufacturing cost, since there is no need to package a plurality of drive integrated circuits to drive each of the LED dies.

The LED die may have a flip-chip structure.

The first electrode and the second electrode may be disposed on the same plane.

Each of the first electrode and the second electrode may be electrically connected to the p electrode and the n electrode by a conductive paste.

The display device may further include a bank and a protective film disposed on the LED die.

The display device may further comprise a filling layer interposed between the bank and the LED die and between the bank and the protective film, and the filling layer may be made of resin. Some of the resins may be composed of a mixture of carbon series.

The bank may comprise an insulating material comprising a black material.

The bank may have a shape corresponding to the shape of the LED die.

The display device may further include a black matrix (BM) interposed between the bank and the protective film.

The first electrode may be integrated with one of the n electrode and the p electrode, and the second electrode may be integrated with the other electrode of the n electrode and the p electrode.

The first electrode, the second electrode, the p electrode, and the n electrode may be made of gold (Au).

The LED die includes a first heat dissipating film disposed on one surface of one electrode facing the first electrode of the n electrode and a p electrode and a second heat dissipating film disposed on one surface of the other electrode facing the second electrode .

A display device according to another embodiment of the present invention is provided. The display device is configured to apply a voltage of a different level to the first electrode and the first electrode on the base substrate. The display device includes an electric field area in which the second electrode spaced from the first electrode is arranged, And an LED die disposed on the opening and including a backplane that includes an electroluminescent region including an opening exposing the first and second electrodes. Accordingly, the display device according to another embodiment of the present invention can provide a high-resolution screen even on a very large screen because the LED die, not the LED package, is arranged on the backplane so as to match the size of the opening.

The display device may further include a bank disposed in the non-electric field region to define an electric field region.

The display device has a shape for receiving the LED die, and may further include a bank made of a black material.

The LED die may include a p-electrode and an n-electrode opposing the first electrode and the second electrode.

The non-electrified region is disposed on the base substrate with at least one signal line electrically connected to at least one of the first electrode and the second electrode, a driving element electrically connected to the at least one signal line, and at least one signal line and a driving element Lt; / RTI > bank.

The details of other embodiments are included in the detailed description and drawings.

The present invention is characterized in that two electrodes are arranged on the backplane on which the thin film transistors are arranged and different voltage levels are applied, and an LED die is arranged to be electrically connected to the two electrodes, It is possible to provide a display device capable of reducing the overall weight of the display device and reducing the cost of the manufacturing cost by allowing the LED die to emit light by the vehicle.

The present invention can provide a display device in which display quality is improved even in a very large screen by disposing the banks so that the light emitting regions are defined on the backplane on which the thin film transistors are arranged and then arranging the LED elements in the die corresponding to the light emitting regions .

The effects according to the present invention are not limited by the contents exemplified above, and more various effects are included in the specification.

1 is a schematic exploded perspective view for explaining a display device according to an embodiment of the present invention.
2 is a schematic plan view for explaining the pixel structure of the display device of FIG.
3 is a schematic cross-sectional view for explaining a pixel structure of the display device of FIG.
4 to 7 are schematic cross-sectional views for explaining a display device according to various embodiments of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. Where the terms "comprises", "having", "done", and the like are used in this specification, other portions may be added unless "only" is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

An element or layer is referred to as being another element or layer "on ", including both intervening layers or other elements directly on or in between.

Although the first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

Like reference numerals refer to like elements throughout the specification.

The sizes and thicknesses of the individual components shown in the figures are shown for convenience of explanation and the present invention is not necessarily limited to the size and thickness of the components shown.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other partially or entirely and technically various interlocking and driving is possible as will be appreciated by those skilled in the art, It may be possible to cooperate with each other in association.

Various embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

1 is a schematic exploded perspective view for explaining a display device according to an embodiment of the present invention. Referring to FIG. 1, a display device 100 according to an exemplary embodiment of the present invention includes a backplane 110, a plurality of LED dies 120, and a protective film 130.

The backplane 100 includes a display area DA and a non-display area NDA.

The display area DA is an area where an actual image is displayed, and is disposed at the center of the backplane 110. [ The display region DA includes a plurality of gate lines GL and a plurality of pixels P which can be defined by a plurality of data lines DL and a plurality of gate lines GL and a plurality of data lines DL. .

The non-display area NDA is an area in which no image is displayed, and is arranged in a form surrounding the display area DA. The non-display area NDA may be provided with a plurality of gate lines GL and a driver IC for controlling driving of the plurality of data lines DL.

However, the positions of the display area DA and the non-display area NDA are not limited to the above contents and can be variously changed.

A plurality of LED dies 120 are disposed on the backplane 110 as light emitting elements. Here, the LED die 120 refers to a state in which the LED unit 120 is cut off on a wafer-by-pixel wafer basis, which means a state before the LED packaging process is performed. The plurality of LED dies 120 may be arranged to correspond to a plurality of pixels P partitioned in the display area DA. Each LED die 120 may emit light of any one of red, green, blue, and white. A more detailed structure of the LED die 120 will be described in more detail with reference to FIGS. 2 and 3. FIG.

The protective film 130 is disposed on the backplane 110 and the LED die 120. The protection film 130 may protect the backplane 110 and the LED die 120 by blocking air or moisture from the outside. The protective film 130 may be made of a material which is heat-resistant and can be well discharged. Specifically, the protective film 130 may be made of a transparent plastic, for example, polyimide (PI) or urethane-based plastic.

Hereinafter, the pixel structure in the display device 100 will be described with reference to FIGS. 2 and 3 for a more detailed description.

2 is a schematic plan view for explaining the pixel structure of the display device of FIG. 3 is a schematic cross-sectional view for explaining a pixel structure of the display device of FIG.

2 and 3, the backplane 110 includes a base substrate 111, a gate insulating layer 112, a thin film transistor 113, a passivation layer 114, an overcoat layer 115, a first electrode 116, A second electrode 117, and a bank 118. [

First, the base substrate 111 may be an insulating substrate. For example, the base substrate 111 may be made of glass, quartz, resin, or the like. In addition, the base substrate 111 may include a polymer or plastic having high heat resistance. In some embodiments, the base substrate 111 may have flexibility. In other words, the base substrate 111 may be a substrate capable of deforming by rolling, folding, bending, or the like.

A gate line GL, a gate electrode 1131 and a common line CL are disposed on a base substrate 111. [

The gate line GL may extend in the first direction, for example, in the lateral direction, on the base substrate 111, and the gate electrode 1131 may be disposed so as to protrude from the gate line GL. The gate line GL and the gate electrode 113 may be made of a conductive material and made of the same material.

The common line CL is disposed apart from the gate line GL or the gate electrode 1131. [ Further, the common line CL may extend substantially in the same direction as the gate line GL, for example, in the horizontal direction. The common line CL is disposed on the same layer as the gate line GL and may be made of the same material as the gate line GL. However, the present invention is not limited to this, and the common line CL may be disposed on the same layer as the data line DL and may be made of the same material as the data line DL.

A gate insulating film 112 is disposed on the gate line GL, the gate electrode 1131, and the common line CL. The gate insulating layer 112 may be made of an insulating material, and may be formed of an inorganic insulating material such as silicon nitride, silicon oxide, silicon oxynitride, or the like. The gate insulating film 112 may have a single-layer structure, or may have a multi-layer structure in which a plurality of insulating layers are stacked.

An active layer 1132 is disposed on the gate insulating film 112. The active layer 1132 is disposed overlapping with the gate electrode 1131. The active layer 1132 may be formed of an oxide semiconductor, amorphous silicon, polycrystalline silicon, or the like.

A source electrode 1133, a drain electrode 1134 and a data line DL are arranged on the gate insulating film 112 and the active layer 1132. [

The data line DL carries a data voltage. In addition, the data line DL may extend in a second direction intersecting the first direction, for example, in the longitudinal direction to cross the gate line GL.

The source electrode 1133 protrudes from the data line DL and is arranged to overlap with a part of the active layer 1132. [ The drain electrode 1134 is spaced apart from the source electrode 1133 on the gate electrode 1131 and arranged to overlap with a part of the active layer 1132.

The thin film transistor 113 includes the gate electrode 1131, the source electrode 1133, the drain electrode 1134 and the active layer 1132 described above. The thin film transistor 113 is a driving element that is electrically connected to the first electrode 116 to allow the LED die 120 to emit light, which will be described later.

A passivation layer 114 for protecting the thin film transistor 113 is disposed on the thin film transistor 113. The passivation layer 114 may be formed of an organic insulating material or an inorganic insulating material.

An overcoat layer 115 is disposed on the passivation layer 114. The overcoat layer 115 is made of an insulating material and flattens the upper portion of the thin film transistor 113.

On the overcoat layer 115, a first electrode 116, a second electrode 117, and a bank 118 are disposed. The first electrode 116 is electrically connected to the drain electrode 1134 through the passivation layer 114 exposing a part of the drain electrode 1134 and the first contact hole CH1 formed in the overcoat layer 115. [ Accordingly, the first electrode 116 can receive a data voltage transmitted through the data line DL when the thin film transistor 113 is turned on. Here, the data voltage may have a first voltage level.

The second electrode 117 is disposed at the same level as the first electrode 116, that is, on the same plane. The second electrode 117 is connected to the common line CL through the gate insulating film 112 exposing a part of the common line CL, the passivation layer 114 and the second contact hole CH2 formed in the overcoat layer 115. [ Respectively. Accordingly, the second electrode 117 can receive a common voltage transmitted through the common line CL. The common voltage applied to the second electrode 117 may have a second voltage level different from the first voltage level applied to the first electrode 116. [ Accordingly, the first electrode 116 and the second electrode 117 can form an electric field by a voltage difference between the first voltage level and the second voltage level.

The first electrode 116 and the second electrode 117 may be made of a conductive material. For example, the first electrode 116 and the second electrode 117 may be formed of, for example, a metal material or a transparent conductive material.

The bank 118 is disposed so as to cover the ends of either one of the first electrode 116 and both ends of the second electrode 117. Specifically, the bank 118 may be arranged to cover the first electrode 116 and the end of the second electrode 117 adjacent to the outer area of the pixel P out of the two ends. This bank 118 includes an opening OP formed to expose the first electrode 116 and the second electrode 117 and may define each pixel P. [

The bank 118 may be made of an insulating material, and may include a black material. The bank 118 serves to mask lines that can be viewed through the display area DA by including a black material. The bank 118 may be made of, for example, a carbon-based mixture, and may specifically include carbon black. Since the carbon based mixture is excellent in thermal conductivity, the display device 100 according to an embodiment of the present invention is a device in which the heat generated in the LED die 120 is absorbed by the display device 120 as the bank 118 is made of a carbon- (Not shown). In this case, the ratio of carbon in the mixture can be appropriately adjusted so that the bank 118 has insulation property.

The bank 118 may define an Emitting Area (EA). The first electrode 116 and the second electrode 117 are disposed in the light emitting region EA defined by the bank 118. [ The light emitting area EA may also be referred to as an electric field area because an electric field is formed by a voltage difference between the first electrode 116 and the second electrode 117 disposed in the light emitting area EA.

On the other hand, the region where the bank 118 is disposed on the base substrate 111 may be referred to as a non-emission area (NEA) or a non-electrified area. The signal lines such as the thin film transistor 113, the data line DL, and the gate line GL can be disposed in the non-emission region NEA.

The LED die 120 is disposed on the first electrode 116 and the second electrode 117. The LED die 120 includes an LED base substrate 121, an n-type layer 122, an active layer 123, a p-type layer 124, an n-electrode 125 and a p- The LED die 120 of the display device 100 according to an exemplary embodiment of the present invention has a structure of a flip-chip in which an n-electrode 125 and a p-electrode 126 are formed on one side.

The LED base substrate 121 may be made of a material capable of emitting light, and may be made of, for example, sapphire.

The LED die 120 is formed in the following manner. An n-type layer 122 is disposed on the LED base substrate 121. The n-type layer 122 can be formed by implanting n-type impurity into gallium nitride (GaN) having excellent crystallinity. The active layer 123 is disposed on the n-type layer 122. The active layer 123 is a light emitting layer that emits light from the LED die 120, and may be made of a nitride semiconductor, for example, indium gallium nitride (InGaN). A p-type layer 124 is disposed on the active layer 123. The p-type layer 124 can be formed by implanting p-type impurity into gallium nitride (GaN).

The LED die 120 according to an embodiment of the present invention is formed by sequentially stacking the n-type layer 122, the active layer 123 and the p-type layer 124 on the LED base substrate 121 And then an n electrode 125 and a p electrode 126 are formed after a predetermined portion is etched. At this time, a predetermined portion is a space for separating the n-electrode 125 and the p-electrode 126, and a predetermined portion is etched so that a part of the n-type layer 122 is exposed. In other words, the surface of the LED die 120 on which the n-electrode 125 and the p-electrode 126 are to be disposed may have different height levels than the planarized surface.

Thus, the n-electrode 125 is disposed on the n-type layer 122 exposed by the etched region, that is, the etching process. The n-electrode 125 may be formed of a conductive material. On the other hand, a p-electrode 126 is disposed on the non-etched region, that is, on the p- The p-electrode 126 may be made of the same material as the n-electrode 125, for example.

As described above, in the state that the n-type layer 122, the active layer 123, the p-type layer 124, the n-electrode 125 and the p-electrode 126 are formed on the LED base substrate 121, And the p-electrode 126 are opposed to the first electrode 151 and the second electrode 152, respectively, the LED die 120 is disposed in the light emitting region EA on the backplane 110. [

The n-electrode 125 of the LED die 120 is electrically connected to the second electrode 117 through the second conductive paste 152 and the p-electrode 126 is electrically connected to the first conductive paste 151 through the first conductive paste 151. [ And is electrically connected to the electrode 116. The first electrode 116 may be electrically connected to the n-electrode 125 and the second electrode 117 may be electrically connected to the p-electrode 126. However, the present invention is not limited thereto. At this time, the first conductive paste 151 and the second conductive paste 152 may be made of a material containing silver (Ag). The first conductive paste 151 and the second conductive paste 152 are applied to the first electrode 116 and the second electrode 117 by an inkjet method to form the first electrode 116 and the p electrode 126, And the second electrode 117 and the n-electrode 125 may be bonded to each other. The reason why the first conductive paste 151 and the second conductive paste 152 are disposed on the first electrode 116 and the second electrode 117 through the inkjet process is that the first conductive paste 151 and the second conductive paste 152, The accuracy of formation positions of the first conductive paste 151 and the second conductive paste 152 can be improved.

The LED die 120 may be disposed on the backplane 110 on which the thin film transistor 113 is disposed using a vacuum chuck or the like. For example, the LED die 120 may be grouped in hundreds or thousands of units, and the grouped LED die 120 may be placed on the backplane 110 at one time using a vacuum chuck. As described above, the display device 100 according to the embodiment of the present invention has a structure in which the LED die 120 is disposed on the backplane 110 on which the thin film transistor 113 is disposed, The voltage levels different from each other applied to the first electrode 116 and the second electrode 117 are transmitted to the n electrode 125 and the p electrode 126 respectively and the LED die 120 emits light .

A filler layer 140 is interposed between the bank 118 and the LED die 200 disposed on the backplane 110 and between the protective film 130 and the backplane 110 where the LED die 120 is disposed. The filling layer 140 is interposed in the space between the backplane 110 and the protective film 130 except for the LED die 120, the first conductive paste 151 and the second conductive paste 152 .

The filling layer 140 may have adhesiveness. Accordingly, the filler layer 140 can fix the protective film 130 and the backplane 110, and can also fix the LED die 120 and the protective film 130. [

The filling layer 140 may be made of a resin having excellent thermal conductivity. Specifically, the filling layer 140 may be made of a resin having better thermal conductivity than air. That is, the filling layer 140 may be made of any material having better thermal conductivity and insulating property than air. Thus, a filling layer 140 having better thermal conductivity than air is interposed between the LED die 120 and the bank 118 and between the bank 118 and the protective film 130, It is possible to disperse the heat and reduce the defect caused by the heat generated when the LED die 120 emits light.

The filling layer 140 may be made of a transparent resin. Light emitted from the LED die 120 travels toward the upper side of the display device 100, that is, toward the protective film 130 side. Accordingly, the filling layer 140 interposed between the protective film 130 and the LED die 120 is made of a transparent material to allow light emitted from the LED die 120 to pass therethrough.

In order to provide a very large screen in a conventional display device, a driving circuit integrated element is packaged on the back of a plurality of LED dies, a plurality of packaged LED packages are mounted on a very large substrate, and then a cabinet process is performed to fix them. Accordingly, in a conventional display device for providing a very large screen, it is necessary to provide a very large screen in the form of an LED package, so that a space corresponding to the size of each LED package must be secured. Therefore, due to the LED package having a size of several mm x several mm, the conventional display device is difficult to be realized as a display device of high resolution. Further, in a conventional display device providing a very large screen, since the driving ICs are individually packaged in the respective LED dies and mounted on the very large substrate, the weight of the entire display device has to be increased. In addition, in a conventional display device for providing a very large screen, it is necessary to mount a plurality of packaged LED packages on a very large substrate and then perform a cabinet process for supporting and fixing them. However, since the cabinet process itself is an expensive process Costs have increased.

The display device 100 according to an exemplary embodiment of the present invention may be configured such that an LED die 120 having a size of several tens of micrometers, several tens of micrometers, or hundreds of micrometers and several hundreds of micrometers is disposed on the backplane 110 The area of one pixel can be reduced as compared with a conventional display device that provides a very large screen in the form of an LED package having a size of several mm x several mm. Accordingly, the display device 100 according to an exemplary embodiment of the present invention can provide a very large screen and a high-resolution image, thereby improving the display quality. The display device 100 according to an embodiment of the present invention may be configured such that the LED die 120 is disposed on the backplane 110 on which the thin film transistor 113 is disposed and then the thin film transistor 113 It is not necessary to package the LED die 120, so that the weight of the entire display device can be reduced. In addition, since an expensive cabinet process is not required, the manufacturing process can be simplified and the manufacturing cost can be lowered. Therefore, the display device 100 according to the embodiment of the present invention is more reasonable to be applied to a very large screen.

The display device 100 according to an embodiment of the present invention is interposed between the LED die 120 and the bank 118 or between the backplane 110 in which the LED die 120 is disposed and the protective film 130 And a filling layer 140 made of a resin. In addition, the filling layer 140 may be made of a material having excellent thermal conductivity. Therefore, the display device 100 according to an embodiment of the present invention can more reliably disperse the heat generated from the LED die 120, thereby reducing defects of the device due to heat generation.

In addition, the display device 100 according to an embodiment of the present invention includes a protective film 130 made of a material which can finally discharge heat on the backplane 110 on which the LED die 120 is disposed . Therefore, it is possible to further reduce the defects of the device due to the heat generation of the display device 100 according to the embodiment of the present invention.

In some embodiments, the backplane 110 may be implemented in a passive matrix rather than an active matrix, in which the thin film transistor 113 is used. That is, the backplane 110 does not include the thin film transistor 113, and the first electrode 151 may be electrically connected directly to the gate line GL to emit the LED die 120.

In some embodiments, signal lines such as gate line GL, data line DL and common line CL, thin film transistor 113, first electrode 116, second electrode 117 and LED die 120 can be variously changed. For example, the size of the LED die 120 may be determined according to the desired resolution, and the distance between the LED die 120 and the LED die 120, the electrode size, the electrode spacing, and the like may be determined. In other words, when the desired resolution is high, the size of the LED die 120 is reduced, and accordingly, the size of the first electrode 116 and the second electrode 117 connected to the LED die 120 can be reduced. Conversely, if the desired resolution is not high, the size of the LED die 120 can be increased because there is no restriction on the size of the LED die 120, the size of the LED die 120 can be determined more freely, Can also be determined more freely.

In some embodiments, the display device 100 may include additional thin film transistors and capacitors. For example, the display device 100 may further include a switching thin film transistor or a thin film transistor for circuit compensation, in addition to the driving thin film transistor as shown in FIG. In addition, the display device 100 may further include a capacitor, so that the luminous efficiency of the display device 100 may be improved.

In some embodiments, the thickness of the n-electrode 125 and the p-electrode 126 may be equal to each other. The thickness of the second conductive paste 152 for electrically connecting the n-electrode 125 and the second electrode 117 is set such that the thickness of the first conductive paste 152, which electrically connects the p-electrode 126 and the first electrode 116, (151).

In some embodiments, the fill layer 140 may comprise a mixture of carbonaceous species in some regions. That is, some of the resin constituting the filling layer 140 may be made of a carbon-based mixture. As described above, the light emitted from the LED die 120 advances toward the upper side of the display device 100, that is, toward the protective film 130 side. The filling layer 140 interposed between the protective film 130 and the LED die 120 is made of a transparent material so as to allow the light emitted from the LED die 120 to pass outside the display device 100, Other portions of the filler layer 140 may comprise a carbonaceous mixture of black materials. Accordingly, since the first electrode 116, the second electrode 117, and the signal lines can be covered by the bank layer 118 as well as the filling layer 140, degradation of the display quality can be suppressed.

In some embodiments, when the LED die 120 emitting white is disposed, a color filter may be further disposed in the corresponding upper region. At this time, the color filter may be disposed on the protective film 130 or between the protective film 130 and the LED die 120.

The drain electrode 1134 may protrude from the data line DL and the source electrode 1133 may be electrically connected to the first electrode 116. In some embodiments,

4 is a schematic cross-sectional view illustrating a display device according to another embodiment of the present invention. The display device 200 shown in Fig. 4 differs from the display device 100 shown in Figs. 1 to 3 in that the constituent materials of the banks 118 are different and the black matrix 220 is further included. The components are substantially the same. Therefore, redundant description of the same components is omitted.

Referring to FIG. 4, the bank 218 does not include a black material. In other words, the bank 218 may be made of any one of a transparent organic insulating material, for example, polyimide (PI) or photoacryl.

Wirings such as a data line DL and a gate line GL disposed in the backplane 210 can be recognized since the bank 218 does not include a black material. Accordingly, in the display device 200 according to another embodiment of the present invention, a black matrix (BM) 220 is disposed on the bank 218.

Referring to FIG. 4, the black matrix 220 is disposed in the non-emitting region NEA to cover the wirings that can be viewed through the filling layer 140. In addition, the black matrix 220 may be disposed in the light emitting area EA within a range that does not cover the LED die 120. The black matrix 220 may comprise an insulating material comprising a carbon black mixture.

As described above, in the display device 200 according to another embodiment of the present invention, when the black material is not included in the bank 218, the black matrix 220 is disposed so as to correspond to the non-light emitting region NEA, It is possible to reduce the deterioration of the display quality due to the visible reflection of the reflective material.

5 is a schematic cross-sectional view illustrating a display device according to another embodiment of the present invention. The display device 300 shown in FIG. 5 is different from the display device 100 shown in FIGS. 1 to 3 in that the first electrode 116, the second electrode 117, the n electrode 125, and the p electrode 126 are different from each other and the first conductive paste 151 and the second conductive paste 152 are omitted, and the other components are substantially the same. Therefore, redundant description of the same components is omitted.

5, the first electrode 316 is integrated with the p-electrode 326, and the second electrode 317 is integrated with the n-electrode 325. That is, there may be no interface between the first electrode 316 and the p-electrode 326, and there may be no interface between the second electrode 317 and the n-electrode 325.

The first electrode 316 and the p-electrode 326 are integrated and the second electrode 317 and the n-electrode 325 are integrated to form a fusion bonding process. Specifically, in a state in which the first electrode 316 and the p electrode 326 are in contact with each other and the LED die 320 is arranged such that the second electrode 317 and the n electrode 325 are in contact with each other, The first electrode 316 and the p-electrode 326 may be fusion-bonded and the second electrode 317 and the n-electrode 325 may be fusion bonded by applying a predetermined temperature (for example, about 100 ° C)

The first electrode 316, the second electrode 317, the n-electrode 325 and the p-electrode 326 may be made of a material suitable for fusion bonding. That is, the material that can be melted at the process temperature used in the melt bonding process may be used as the first electrode 316, the second electrode 317, the n-electrode 325, and the p-electrode 326, At the process temperature, the other metallic material of the display device 300 should not melt. For example, the first electrode 316, the second electrode 317, the n-electrode 325, and the p-electrode 326 may be made of gold (Au).

The first electrode 316, the second electrode 317, the n-electrode 325, and the p-electrode 326 may be formed of a material suitable for fusion bonding, for example, , And then they are electrically connected to each other by fusion bonding. Therefore, it is unnecessary to use a conductive paste for electrically connecting the respective electrodes. In addition, electrodes electrically connected to each other are formed integrally. That is, since the first electrode 316 is integrated with the p-electrode 326 and the second electrode 317 is integrated with the n-electrode 325, The resistance of the joint portion can be relatively lowered, and heat generation can be suppressed due to heat generation.

Although the first electrode 316 is shown in FIG. 5 as being integrated with the p-electrode 326 and the second electrode 317 is shown as being integrated with the n-electrode 325, in some embodiments, the first electrode 316 the second electrode 317 may be integrated with the n-electrode 325, and the second electrode 317 may be integrated with the p-electrode 326.

6 is a schematic cross-sectional view illustrating a display device according to another embodiment of the present invention. The display device 400 shown in Fig. 6 is different from the display device 100 shown in Figs. 1 to 3 only in the structure of the LED die 120, and the other components are substantially the same. Therefore, redundant description of the same components is omitted.

6, the LED die 420 includes a first heat dissipating film 427 and a second electrode 117 disposed on one surface of a p-electrode 126 facing the first electrode 116, And a second heat dissipation film 428 disposed on one side of the electrode 125. Accordingly, the first heat dissipating film 427 and the second heat dissipating film 428 may be electrically connected to the first electrode 116 and the second electrode 117, respectively, which are opposite to each other. Each of the first heat dissipating film 427 and the second heat dissipating film 428 is electrically connected to the first electrode 116 and the second electrode 117 and is capable of emitting heat generated from the LED die 420 ≪ / RTI > For example, the first heat dissipation film 427 and the second heat dissipation film 428 may be made of a metal material such as aluminum (Al) or copper (Cu).

In the display device 400 according to another embodiment of the present invention, between the first electrode 116 and the p-electrode 126 and between the second electrode 117 and the second electrode 117, The first heat dissipating film 427 and the second heat dissipating film 428 are disposed between the n-electrode 125 and the n-electrode 125, thereby alleviating the heat generation phenomenon in the junction region and suppressing element defects due to heat generation.

In some embodiments, the first electrode 116 may be opposed to the n-electrode 125, the second electrode 117 may be opposed to the p-electrode 126, and the first heat dissipating film 427 and the second heat dissipating film Electrode 428 may be disposed between the first electrode 116 and the n-electrode 125 and between the second electrode 117 and the p-electrode 126, respectively.

7 is a schematic cross-sectional view illustrating a display device according to another embodiment of the present invention. The display device 500 shown in Fig. 7 differs from the display device 100 shown in Figs. 1 to 3 only in the shape of the bank 118 and the filling layer 140, same. Therefore, redundant description of the same components is omitted.

Referring to FIG. 7, the bank 518 has a shape corresponding to the shape of the LED die 120. In other words, the bank 518 has a shape for receiving the LED die 120. Specifically, the bank 518 includes a first bank 518a formed to define the light emitting region EA, a spacing space between the first electrode 116 and the second electrode 117 on which the LED die 120 is mounted, And a second bank 518b formed in the corresponding region. After the first conductive paste 151 and the second conductive paste 152 are disposed on the first electrode 116 and the second electrode 117 and the LED die 120 is arranged in the shape of the bank 518 Respectively.

The bank 518 may be made of an insulating material, and may include a black material. The bank 518 may be made of, for example, a carbon-based mixture, and may specifically include carbon black. Since the carbon-based mixture is excellent in thermal conductivity, the heat generated in the LED die 120 can be easily discharged to the outside of the display device 500 as the banks 518 are made of a carbon-based mixture. In addition, the bank 518 includes a black material and has a shape corresponding to the shape of the LED die 120, thereby making it possible to completely cover the wirings that may be visually observed through the display area DA.

7, the filling layer 540 is disposed only between the bank 518 and the protective film 130 and between the LED die 120 and the protective film 130. [ In order to pass the light emitted from the LED die 120 to the side of the protective film 130, the filling layer 540 may be made of a transparent resin and may have adhesiveness.

In the display device 500 according to another embodiment of the present invention, the bank 518 has a shape corresponding to the shape of the LED die 120 and is made of a black material. That is, when the display device 500 is viewed on the display device 500, the bank 510 is configured such that all the parts except the LED die 120 are covered by the bank 510. [ Therefore, it is possible to reduce the degradation of the display quality due to the visible reflective material such as signal wiring.

In addition, in the display device 500 according to another embodiment of the present invention, a bank 518 made of a carbon-based mixture having thermal conductivity superior to a transparent resin material is disposed so as to surround the LED die 120. Thus, the heat generated in the LED die 120 can be better dispersed by the bank 518, and the failure of the device due to the heat generated in the LED die 120 can be reduced.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

110: backplane 111: base substrate
112: gate insulating film 113: thin film transistor
114: passivation layer 115: overcoat layer
116, 316: a first electrode 117, 317: a second electrode
118, 218, 518:
120, 320, 420: LED die 121: LED base substrate
122: n-type layer 123: active layer
124: p-type layer 125, 325: n electrode
126, 326: p electrode 427: first heat dissipating film
428: second heat dissipating film 130: protective film
220: black matrix 140, 540: filling layer
151: first conductive paste 152: second conductive paste
GL: gate line DL: data line
CL: common line 1131: gate electrode
1132: active layer 1133: source electrode
1134: drain electrode EA: light emitting region
NEA: non-emission area OP: opening

Claims (19)

A driving element on a substrate;
A first electrode electrically connected to the driving element;
A wiring spaced from the driving element on the substrate;
A second electrode electrically connected to the wiring;
A bank disposed to define a light emitting region on the first electrode and the second electrode; And
And an LED die disposed in the light emitting region and including a p-electrode and an n-electrode electrically connected to the first electrode and the second electrode, respectively. The method according to claim 1,
Wherein the LED die has a flip-chip structure. The method according to claim 1,
Wherein the first electrode and the second electrode are disposed on the same plane. The method of claim 3,
Wherein each of the first electrode and the second electrode is electrically connected to the p electrode and the n electrode by a conductive paste. The method according to claim 1,
And a protective film disposed on the bank and the LED die. 6. The method of claim 5,
And a filling layer interposed between the bank and the LED die and between the bank and the protective film. The method according to claim 6,
Wherein the filling layer is made of resin. 8. The method of claim 7,
Wherein a part of the resin is composed of a mixture of carbon series. 6. The method of claim 5,
Wherein the bank is made of an insulating material containing a black material. 10. The method of claim 9,
Wherein the bank has a shape corresponding to the shape of the LED die. 6. The method of claim 5,
And a black matrix (BM) between the bank and the protective film. The method according to claim 1,
Wherein the first electrode is integrated with one of the n-electrode and the p-electrode, and the second electrode is integrated with the other one of the n-electrode and the p-electrode. 13. The method of claim 12,
Wherein the first electrode, the second electrode, the p electrode, and the n electrode are made of gold (Au). The method according to claim 1,
The LED die may be disposed on one surface of the first heat dissipation film disposed on one surface of the one electrode facing the first electrode and the other electrode facing the second electrode among the n electrode and the p electrode And a second heat dissipation film formed on the second heat dissipation film. An electric field area configured to apply a voltage of a different level to the first electrode and the first electrode on the base substrate, an electric field area in which a second electrode spaced apart from the first electrode is disposed, and an electric field area A backplane including an electroluminescent region disposed such that the first electrode and the second electrode are exposed; And
And an LED die disposed on the opening. 16. The method of claim 15,
And a bank disposed in the non-electric field region to define the electric field region. 16. The method of claim 15,
Further comprising a bank of black material having a shape for receiving said LED die. 16. The method of claim 15,
And the LED die includes a p-electrode and an n-electrode opposing the first electrode and the second electrode, respectively. 16. The method of claim 15,
The non-
At least one signal line electrically connected to at least one of the first electrode and the second electrode on the base substrate;
A driving element electrically connected to the at least one signal wiring; And
And at least one signal wiring and a bank disposed on the driving element.

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